JPH03232219A - Photoresist coating device - Google Patents

Photoresist coating device

Info

Publication number
JPH03232219A
JPH03232219A JP2916290A JP2916290A JPH03232219A JP H03232219 A JPH03232219 A JP H03232219A JP 2916290 A JP2916290 A JP 2916290A JP 2916290 A JP2916290 A JP 2916290A JP H03232219 A JPH03232219 A JP H03232219A
Authority
JP
Japan
Prior art keywords
cup
ultraviolet rays
photosensitizer
dissolved
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2916290A
Other languages
Japanese (ja)
Inventor
Atsumi Yamaguchi
敦美 山口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2916290A priority Critical patent/JPH03232219A/en
Publication of JPH03232219A publication Critical patent/JPH03232219A/en
Pending legal-status Critical Current

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  • Coating Apparatus (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To prevent the clogging of an exhaust piping caused by the deposition of solid resist by a method wherein a cup, in which a semiconductor wafer can be housed, is formed by a cup which has a light source for irradiation of ultraviolet rays around it, an ultraviolet ray transmitting window, where ultraviolet rays are transmitted, is provided on the circumferential wall of the above-mentioned cup, and a developing treatment solution feeding port is opened through the upper part of the transmitting window. CONSTITUTION:The photosensitizer contained in the positive type photoresist adhered to the inner wall of a spin cup 11 is dissolved by projecting ultraviolet rays thereon, and the photosensitizer is liquefied by the alkali aqueous solution fed into the spin cup. The above-mentioned dissolved solution is discharged outside of the spin cup 11 from the spin cup 11 through a draining hole 13. In this case, the positive type photoresist consists of the compound containing naphthoquinonediazido group, which is alkali-soluble resin and photosensitizer, and as it is dissolved by the organic solvent such as ethylcellosolveacetate and the like, carbene and kelene are generated successively when the naphthoquinonediazido, as a photosensitizer, absorbs ultraviolet rays, then it turned to indenecarboxylic acid by reacting with the moisture in the system, and it is dissolved into the alkali aqueous solution of a developer.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体製造プロセスで使用するフォトレジス
トの塗布装置に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a photoresist coating apparatus used in a semiconductor manufacturing process.

[従来の技術〕 一般に、半導体ウェハ上にフォトレジストを塗布する方
法としては、スピンカップ内の半導体ウェハ上にフォト
レジストを滴下し、半導体ウェハを回転させることによ
り均一のフォトレジスト膜を形成するスピンコード法が
知られている。
[Prior Art] In general, a method for applying photoresist onto a semiconductor wafer is a spin method in which photoresist is dropped onto the semiconductor wafer in a spin cup and a uniform photoresist film is formed by rotating the semiconductor wafer. The code method is known.

ところで、この種のスピンコード法においては、フォト
レジストの塗布時に回転中の半導体ウェハからスピンカ
ップの内面に多量のフォトレジストが飛散して付着する
ことから、これをリンス液によって常時除去してスピン
カップ内面を洗浄する必要がある。すなわち、リンス液
による洗浄が無い場合には、塗布時にフォトレジストが
スピンカップ内面上のフォトレジスト付着物で跳ね返っ
て再度半導体ウェハ上に滴下され、フォトレジスト膜形
成が高精度に行われなくなるからである。
By the way, in this type of spin code method, a large amount of photoresist scatters and adheres to the inner surface of the spin cup from the rotating semiconductor wafer when applying the photoresist, so this is constantly removed using a rinsing liquid and then the spin The inside of the cup needs to be cleaned. In other words, if there is no cleaning with a rinse solution, the photoresist will bounce off the photoresist deposits on the inner surface of the spin cup during coating and be dropped onto the semiconductor wafer again, making it impossible to form a photoresist film with high precision. be.

次に、従来のフォトレジスト塗布装置およびこの塗布装
置の使用によるフォトレジスト付着物の除去方法につき
、第3図を用いて説明する。
Next, a conventional photoresist coating device and a method for removing photoresist deposits using this coating device will be described with reference to FIG.

先ず、フォトレジスト塗布装置について説明すると、同
図において、符号lで示すものはリンス液注入口2を有
しポジ型フォトレジストが塗布される半導体ウェハ3を
収容可能なスピンカップ、4はこのスピンカップ1内に
設けられ高速回転するウェハチャック、5はこのウェハ
チャック4の上方に設けられ半導体ウェハ3上にフォト
レジストを噴出するノズルである。また、6は前記スピ
ンカップ1内を排気する排気口、7は前記スピンカップ
1外にリンス液(有機溶剤)8を排出する排出口である
。なお、この排出ロアには、リンス液排出用の配管(図
示せず)が接続されているものとする。
First, the photoresist coating apparatus will be explained. In the figure, the symbol l is a spin cup that has a rinsing liquid inlet 2 and can accommodate a semiconductor wafer 3 to be coated with a positive photoresist, and 4 is a spin cup for this spin cup. A wafer chuck 5 is provided in the cup 1 and rotates at high speed, and a nozzle 5 is provided above the wafer chuck 4 and sprays photoresist onto the semiconductor wafer 3. Further, 6 is an exhaust port for evacuating the inside of the spin cup 1, and 7 is an exhaust port for discharging the rinsing liquid (organic solvent) 8 to the outside of the spin cup 1. It is assumed that a pipe (not shown) for discharging a rinse liquid is connected to this discharge lower.

次に、フォトレジスト付着物の除去方法について説明す
ると、スピンカップ1内にリンス液8を注入してスピン
カップ1の内面のフォトレジスト付着物(飛散物)Aを
溶解し、このフォトレジスト溶液をリンス液8によって
排出ロアからスピンカップ1外に排出させるのである。
Next, to explain the method for removing photoresist deposits, the rinsing liquid 8 is injected into the spin cup 1 to dissolve the photoresist deposits (splatters) A on the inner surface of the spin cup 1, and the photoresist solution is removed. The rinsing liquid 8 is used to discharge the spin cup 1 from the discharge lower.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

ところで、従来のフォトレジスト塗布装置においては、
ポジ型フォトレジストを分解して洗浄する機能を備えて
おらず、このため排出ロアから排出されるポジ型フォト
レジスト溶液の溶剤が排出途中に蒸発して配管(図示せ
ず)内のレジスト固形分が析出していた。この結果、ス
ピンカップ1内に多量のリンス液8を連続的に注入する
必要が生じ、コストが嵩むという問題があづた。
By the way, in conventional photoresist coating equipment,
It does not have a function to disassemble and clean the positive photoresist, and as a result, the solvent of the positive photoresist solution discharged from the discharge lower evaporates during the discharge, resulting in solid resist content in the piping (not shown). was precipitated. As a result, it becomes necessary to continuously inject a large amount of rinsing liquid 8 into the spin cup 1, resulting in the problem of increased costs.

本発明はこのような事情に鑑みてなされたもので、カッ
プの内面に対するリンス液の必要容量を低減させること
ができ、もってコストの低廉化を図ることができるフォ
トレジスト塗布装置を提供するものである。
The present invention has been made in view of the above circumstances, and it is an object of the present invention to provide a photoresist coating device that can reduce the amount of rinsing liquid required for the inner surface of a cup, thereby reducing costs. be.

〔課題を解決するための手段〕[Means to solve the problem]

本発明に係るフォトレジスト塗布装置は、半導体ウェハ
をその内部に収容可能なカップを、紫外線照射用の光源
をその周囲に有するカップによって形成し、このカップ
の周壁に紫外線が透過する透過窓を設けると共に、この
透過窓の上方に現像処理液を供給する供給口を開口させ
たものである。
A photoresist coating apparatus according to the present invention includes a cup capable of accommodating a semiconductor wafer therein, which is formed by a cup having a light source for irradiating ultraviolet rays around the cup, and a transmitting window through which ultraviolet rays pass through the peripheral wall of the cup. At the same time, a supply port for supplying a developing solution is opened above the transmission window.

〔作 用〕[For production]

本発明においては、紫外線の照射によってポジ型フォト
レジスト中の感光剤を分解すると共に、現像処理液の供
給によってポジ型フォトレジストをン容解することがで
きる。
In the present invention, the photosensitizer in the positive photoresist can be decomposed by irradiation with ultraviolet rays, and the positive photoresist can be dissolved by supplying a developing treatment solution.

〔実施例〕〔Example〕

以下、本発明の構成等を図に示す実施例によって詳細に
説明する。
EMBODIMENT OF THE INVENTION Hereinafter, the structure etc. of this invention will be explained in detail by the Example shown in the figure.

第1図は本発明に係るフォトレジスト塗布装置を示す断
面図で、同図において第3図と同一の部材については同
一の符号を付し、詳細な説明は省略する。同図において
、符号11で示すものはその周囲に紫外線照射用の光源
ユニ・ノド12を有するスピンカップで、底部にポジ型
フォトレジスト廃液を排水する排水口13およびカップ
内を排気する排気口14が設けられており、周壁には紫
外線15が透過する透過窓16が設けられている。
FIG. 1 is a cross-sectional view showing a photoresist coating apparatus according to the present invention. In this figure, the same members as in FIG. 3 are designated by the same reference numerals, and detailed description thereof will be omitted. In the figure, what is indicated by the reference numeral 11 is a spin cup having a light source unit 12 for ultraviolet irradiation around it, a drain port 13 at the bottom for draining positive photoresist waste liquid, and an exhaust port 14 for exhausting the inside of the cup. A transmission window 16 through which ultraviolet rays 15 pass is provided on the peripheral wall.

また、この透過窓16の上方には、現像処理液として例
えば水酸化テトラメチルアンモニウム水溶液等のアルカ
リ水溶液17を供給する供給口18が開口されている。
Further, above the transmission window 16, a supply port 18 is opened for supplying an alkaline aqueous solution 17 such as a tetramethylammonium hydroxide aqueous solution as a developing treatment liquid.

なお、スピンカップ11としては、紫外線15が漏洩し
ないように設定されると共に、前記ノズル5に照射しな
いように設定されるものとする。
Note that the spin cup 11 is set so that the ultraviolet rays 15 do not leak, and is also set so that the nozzle 5 is not irradiated with the ultraviolet rays 15.

このように構成されたフォトレジスト塗布装置において
は、紫外線15の照射によってポジ型フォトレジスト中
の感光剤を分解すると共に、アルカリ水溶液17の供給
によってポジ型フォトレジストを溶解することができる
In the photoresist coating apparatus configured in this manner, the photosensitizer in the positive photoresist can be decomposed by irradiation with ultraviolet rays 15, and the positive photoresist can be dissolved by supplying the alkaline aqueous solution 17.

したがって、本実施例においては、レジスト固形分の析
出による排出用配管(図示せず)内の詰まりを防止する
ことができるから、スピンカップ11の内面に対するリ
ンス液の必要容量を低減させることができる。
Therefore, in this embodiment, it is possible to prevent clogging in the discharge pipe (not shown) due to the precipitation of resist solid content, and therefore it is possible to reduce the amount of rinsing liquid required for the inner surface of the spin cup 11. .

次に、本発明のフォトレジスト付着物の除去方法につい
て説明する。
Next, a method for removing photoresist deposits according to the present invention will be explained.

すなわち、フォトレジスト付着物の除去は、先ずスピン
カップ11内面に付着するポジ型フォトレジスト中の感
光剤(ナフトキノンジアジド)を紫外線照射することに
より分解し、次にこれをスピンカップ11内に供給する
アルカリ水溶液16によって溶解するのである。なお、
この溶解液はスピンカップ11内から排水口13を経て
スピンカップ11外に排出される。
That is, to remove the photoresist deposits, first, the photosensitizer (naphthoquinone diazide) in the positive photoresist that adheres to the inner surface of the spin cup 11 is decomposed by irradiation with ultraviolet rays, and then this is supplied into the spin cup 11. It is dissolved by the alkaline aqueous solution 16. In addition,
This solution is discharged from inside the spin cup 11 to the outside of the spin cup 11 through the drain port 13.

この場合、ポジ型フォトレジストは、−gに使用される
ポジ型フォトレジストは、アルカリ可溶性樹脂および感
光剤であるナフトキノンシアシト基を含む化合物からな
り、エチルセロソルブアセテート等の有機溶剤に溶解さ
れるが、感光剤としてのナフトキノンシアシトが第2図
に示すように紫外線を吸収すると、カルヘン、ケテンを
順次体し、次に系中に存在する水分と反応してインデン
カルボン酸となり、これが現像液のアルカリ水溶液に溶
解する。
In this case, the positive photoresist used in -g is made of an alkali-soluble resin and a compound containing a naphthoquinone cyacyto group as a photosensitizer, and is dissolved in an organic solvent such as ethyl cellosolve acetate. However, as shown in Figure 2, when naphthoquinone siacite as a photosensitizer absorbs ultraviolet rays, it sequentially converts into carhene and ketene, and then reacts with moisture present in the system to form indene carboxylic acid, which is then released into the developer. Dissolved in alkaline aqueous solution.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明によれば、半導体ウェハをそ
の内部に収容可能なカップを、紫外線照射用の光源をそ
の周囲に有するカップによって形成し、このカップの周
壁に紫外線が透過する透過窓を設けると共に、この透過
窓の上方に現像処理液を供給する供給口を開口させたの
で、紫外線の照射によってポジ型フォトレジスト中の感
光剤を分解すると共に、現像処理液の供給によってポジ
型フォトレジストを溶解することができる。したがって
、レジスト固形分の析出による排出用配管内の詰まりを
防止することができるから、カップ内面に対するリンス
液の必要容量を低減させることができ、コストの低廉化
を図ることができる。
As explained above, according to the present invention, a cup capable of housing a semiconductor wafer therein is formed by a cup having a light source for irradiating ultraviolet rays around the cup, and a transparent window through which ultraviolet rays are transmitted is provided on the peripheral wall of the cup. At the same time, a supply port for supplying the developing processing solution was opened above this transmission window, so that the photosensitizer in the positive photoresist is decomposed by irradiation with ultraviolet rays, and the positive photoresist is processed by supplying the developing processing solution. can be dissolved. Therefore, clogging in the discharge pipe due to precipitation of resist solids can be prevented, so the required volume of rinsing liquid for the inner surface of the cup can be reduced, and costs can be reduced.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明に係るフォトレジスト塗布装置を示す断
面図、第2図はポジ型フォトレジストの反応状態を示す
図、第3図は従来のフォトレジスト除去装置を示す断面
図である。 11・・・・スピンカップ、12・・・・光源ユニット
、13・・・・排水口、14・・・・排気口、15・・
・・紫外線、16・・・・透過窓、17・・・・アルカ
リ水溶液、18・・・・供給口。 代 理 人 大岩増雄 第 図 第 図 第 図
FIG. 1 is a sectional view showing a photoresist coating apparatus according to the present invention, FIG. 2 is a view showing a reaction state of a positive type photoresist, and FIG. 3 is a sectional view showing a conventional photoresist removal apparatus. 11...Spin cup, 12...Light source unit, 13...Drain port, 14...Exhaust port, 15...
...Ultraviolet light, 16...Transmission window, 17...Alkaline aqueous solution, 18...Supply port. Agent Masuo Oiwa

Claims (1)

【特許請求の範囲】[Claims] ポジ型フォトレジストが塗布される半導体ウェハをその
内部に収容可能なカップを備えたフォトレジスト塗布装
置において、前記カップを、紫外線照射用の光源をその
周囲に有するカップによって形成し、このカップの周壁
に紫外線が透過する透過窓を設けると共に、この透過窓
の上方に現像処理液を供給する供給口を開口させたこと
を特徴とするフォトレジスト塗布装置。
In a photoresist coating apparatus equipped with a cup capable of accommodating a semiconductor wafer to be coated with a positive photoresist, the cup is formed by a cup having a light source for ultraviolet irradiation around the cup, and a peripheral wall of the cup is provided. 1. A photoresist coating apparatus, comprising: a transmission window through which ultraviolet rays pass; and a supply port for supplying a developing solution opened above the transmission window.
JP2916290A 1990-02-07 1990-02-07 Photoresist coating device Pending JPH03232219A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2916290A JPH03232219A (en) 1990-02-07 1990-02-07 Photoresist coating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2916290A JPH03232219A (en) 1990-02-07 1990-02-07 Photoresist coating device

Publications (1)

Publication Number Publication Date
JPH03232219A true JPH03232219A (en) 1991-10-16

Family

ID=12268553

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2916290A Pending JPH03232219A (en) 1990-02-07 1990-02-07 Photoresist coating device

Country Status (1)

Country Link
JP (1) JPH03232219A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008103611A (en) * 2006-10-20 2008-05-01 Tokyo Electron Ltd Liquid treating device
JP2012152736A (en) * 2006-08-28 2012-08-16 Transitions Optical Inc Spin coater with optical control

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012152736A (en) * 2006-08-28 2012-08-16 Transitions Optical Inc Spin coater with optical control
JP2014087792A (en) * 2006-08-28 2014-05-15 Transitions Optical Inc Spin coater having optical controller
JP2008103611A (en) * 2006-10-20 2008-05-01 Tokyo Electron Ltd Liquid treating device

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