JPH04162514A - Exfoliation apparatus for resist - Google Patents
Exfoliation apparatus for resistInfo
- Publication number
- JPH04162514A JPH04162514A JP28780090A JP28780090A JPH04162514A JP H04162514 A JPH04162514 A JP H04162514A JP 28780090 A JP28780090 A JP 28780090A JP 28780090 A JP28780090 A JP 28780090A JP H04162514 A JPH04162514 A JP H04162514A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- spinner
- nozzle
- resist
- irradiation device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004299 exfoliation Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 claims abstract description 52
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000007788 liquid Substances 0.000 claims abstract description 14
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 8
- 238000007599 discharging Methods 0.000 claims abstract description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000001035 drying Methods 0.000 claims description 5
- 239000002699 waste material Substances 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 239000003960 organic solvent Substances 0.000 abstract description 7
- 238000004090 dissolution Methods 0.000 abstract description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000007664 blowing Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000010186 staining Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は、基板表面上に塗布された有機レジストを剥離
するためのレジスト剥離装置に関し、特にコンピュータ
等の電子機器に使用するための大規模集積回路(LSI
)装着用の高密度多層配線基板において、導体を形成す
る際に使用する有機レジストを使用後に剥離するための
レジスト剥離装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a resist stripping device for stripping an organic resist coated on the surface of a substrate, and particularly to a large-scale resist stripping device for stripping an organic resist coated on a substrate surface. Integrated circuit (LSI)
) The present invention relates to a resist stripping device for stripping off an organic resist used in forming conductors in a high-density multilayer wiring board for mounting.
〔従来の技術]
従来、この種のレジスト剥離作業は、レジストに対して
可溶性であるメチルエチルケトン等の有機溶剤の入った
容器の中に基板を浸し、基板上に塗布された有機レジス
トを溶解させ、この作業を数回繰り返した後、直ちに基
板−を窒素ブロー等で乾燥させることによりレジストの
剥離を行っていた。[Prior Art] Conventionally, this type of resist stripping work involves immersing a substrate in a container containing an organic solvent such as methyl ethyl ketone that is soluble in the resist, and dissolving the organic resist coated on the substrate. After repeating this operation several times, the resist was immediately removed by drying the substrate with nitrogen blowing or the like.
[発明が解決しようとする課題]
ところが上述した従来のレジスト剥離作業では、導体に
沿った有機溶剤の液循環の悪い場所のレジストが剥離し
きれなかったり、乾燥する際に、有機溶剤に溶解したレ
ジストが基板表面上に再付着したり、有機溶剤が気化す
る際に生じる気化熱分だけ基板が急冷されるため、雰囲
気中の水分が基板表面に露結し、そこにシミが残るなど
の欠点がある。[Problems to be Solved by the Invention] However, in the conventional resist stripping work described above, the resist may not be completely stripped off in areas where the organic solvent has poor circulation along the conductor, or when it dries, the resist may dissolve in the organic solvent. Disadvantages include the resist re-adhering to the substrate surface, and the substrate being rapidly cooled by the heat of vaporization generated when the organic solvent evaporates, resulting in moisture in the atmosphere condensing on the substrate surface and leaving stains there. There is.
本発明の目的は、有機溶剤を使った溶解反応の場合に生
じる剥離残りや、レジストの再付着、シミの発生などの
不具合を防止したレジスト剥離装置を提供することにあ
る。SUMMARY OF THE INVENTION An object of the present invention is to provide a resist stripping device that prevents problems such as residual peeling, resist redeposition, and stains that occur when a dissolution reaction using an organic solvent is performed.
[課題を解決するための手段]
前記目的を達成するため、本発明に係るレジスト剥離装
置においては、液を溜められるディップ槽形状をしたス
ピンナーヘッドと、前記スピンナーヘッドを具備し基板
を保持して回転するスピンナーと、前記スピンナーに接
続して電磁弁を有する廃液口と、前記基板表面に塗布さ
れた有機レジストを感光させるための紫外線照射装置と
、前記基板表面にアルカリ性現像液を吐出するノズルと
、前記基板を洗浄するための純水を吐出するノズルと、
前記基板を乾燥させるための窒素を吐出するノズルとを
有するものである。[Means for Solving the Problems] In order to achieve the above object, a resist stripping apparatus according to the present invention includes a spinner head in the shape of a dip tank in which a liquid can be stored, and a spinner head that holds a substrate. A rotating spinner, a waste liquid port connected to the spinner and having a solenoid valve, an ultraviolet irradiation device for exposing an organic resist applied to the surface of the substrate, and a nozzle for discharging an alkaline developer onto the surface of the substrate. , a nozzle that discharges pure water for cleaning the substrate;
and a nozzle for discharging nitrogen for drying the substrate.
また、前記スピンナーヘッドは、その外周縁を外側に向
けてテーパ状に拡径させたものであり、また、前記紫外
線照射装置は、基板に塗布された有機レジストの感光基
を変質させることなく感光させる露光光線を照射するラ
ンプを有するものである。Further, the spinner head has its outer peripheral edge tapered outward, and the ultraviolet irradiation device is capable of exposing to light without altering the photosensitive groups of the organic resist coated on the substrate. It has a lamp that irradiates an exposure light beam.
[作用] 露光→現像の原理に基づいたレジストの剥離を行う。[Effect] The resist is removed based on the principle of exposure and development.
[実施例] 以下、本発明の一実施例を図により説明する。[Example] Hereinafter, one embodiment of the present invention will be described with reference to the drawings.
第1図は、本発明の一実施例を示す断面図である。FIG. 1 is a sectional view showing one embodiment of the present invention.
図において、本発明のレジスト剥離装置は、液を溜めら
れるディップ槽形状をしたスピンナーへラド2と、スピ
ンナーヘッド2を具備し基板3を保持して回転するスピ
ンナー4と、スピンナー4に接続して電磁弁8を有する
廃液ロアと、基板表面に塗布された有機レジストを感光
させる紫外線照射装置5と、感光した有機レジストを現
像するアルカリ性現像液を吐出するノズル9と、現像さ
れて溶解した有機レジストを洗浄する純水を吐出するノ
ズル10と、基板を乾燥させるための窒素を吐出するノ
ズル11とを有する。In the figure, the resist stripping apparatus of the present invention includes a spinner rad 2 in the form of a dip tank in which liquid can be stored, a spinner 4 equipped with a spinner head 2 and rotating while holding a substrate 3, and a spinner 4 connected to the spinner 4. A waste liquid lower having a solenoid valve 8, an ultraviolet irradiation device 5 for exposing an organic resist coated on a substrate surface, a nozzle 9 for discharging an alkaline developer for developing the exposed organic resist, and a developed and dissolved organic resist. It has a nozzle 10 that discharges pure water for cleaning the substrate, and a nozzle 11 that discharges nitrogen for drying the substrate.
6は、チャンバー、1はチャンバー蓋である。6 is a chamber, and 1 is a chamber lid.
また、4aはモータ、4bはギヤであり、スピンナー4
は、モータ4aの動力をギヤ4bを介して受は回転駆動
される。Further, 4a is a motor, 4b is a gear, and the spinner 4
is driven to rotate by receiving power from a motor 4a via a gear 4b.
実施例において、まずチャンバー蓋1を開けてスピンナ
ーヘッド2上に、有機レジストが塗布された基板3をセ
ットする。In the example, first, the chamber lid 1 is opened and the substrate 3 coated with an organic resist is set on the spinner head 2.
基板3のセットが終了したら、チャンバー蓋1を閉め、
スピンナー4をlOr p m程度の低速で回転させな
がら、チャンバー蓋1に取り付けられた紫外線照射装置
5をONにして、基板3上に塗布された有機レジストを
まんべんなく感光させる。この際、紫外線照射装置5で
使用するランプは、基板3に塗布された有機レジストの
感光基を変質させることなく感光させるために超高圧水
銀灯を使用することが望ましい、また、本装置を感光性
の材料を使用する部屋に設置する場合には、チャンバー
6に取り付ける覗き窓の材質等にも十分注意を払い、紫
外線が外部に漏れないようにする必要がある。加えて、
基板3の厚さ、使用する有機レジストの性質、有機レジ
ストを塗布する際のスピンコーターの性質にも依存する
が、場合によっては基板3の側面に有機レジストが回り
込むときもあるため、スピンナーヘッド2の外周縁2a
はチャンバー6側に向けてゆるやかにテーパーをもたせ
、紫外線が基板3の側面にも十分照射される構造にして
おく必要がある。After setting the substrate 3, close the chamber lid 1,
While rotating the spinner 4 at a low speed of about 1Orpm, the ultraviolet irradiation device 5 attached to the chamber lid 1 is turned on to expose the organic resist coated on the substrate 3 evenly. At this time, it is preferable to use an ultra-high pressure mercury lamp as the lamp used in the ultraviolet irradiation device 5 in order to expose the photosensitive groups of the organic resist coated on the substrate 3 without deteriorating their quality. When installing the chamber 6 in a room using materials such as the above, it is necessary to pay sufficient attention to the material of the viewing window attached to the chamber 6 to prevent ultraviolet rays from leaking to the outside. In addition,
Although it depends on the thickness of the substrate 3, the properties of the organic resist used, and the properties of the spin coater when applying the organic resist, in some cases the organic resist may wrap around the sides of the substrate 3, so the spinner head 2 outer periphery 2a of
It is necessary to have a structure that tapers gently toward the chamber 6 side so that the side surface of the substrate 3 is sufficiently irradiated with ultraviolet rays.
基板3上に塗布された有機レジストを2000mJ/d
の露光量で十分感光させたら、スピンナー4の下部に接
続されている廃液ロアの電磁弁8を閉め、アルカリ性現
像液ノズル9から現像液を吐出し、スピンナーヘッド2
内に現像液を溜めて、感光した有機レジストの現像を行
う。この際、吐出する現像液の量は基板3の表面上11
M1程液が溜る程度でよい。また、基板3の側面のレジ
ストも現像するため、スピンナーヘッド2の外形は基板
3よりも21TIITl程大きくしておく必要がある。Organic resist coated on substrate 3 at 2000 mJ/d
After sufficient exposure with the exposure amount of
A developer is stored inside and the exposed organic resist is developed. At this time, the amount of developer to be discharged is 11 on the surface of the substrate 3.
It is sufficient that the liquid accumulates around M1. Furthermore, since the resist on the side surface of the substrate 3 is also developed, the outer shape of the spinner head 2 needs to be larger than the substrate 3 by about 21TIITl.
加えて、基板3に塗布されている有機レジストの性質、
膜厚にも依存するが、場合によっては1回の現像では完
全に塗布されていたレジストを除去できない場合がある
ので、そのときはスピンナー4を1100rp程度で回
転させながら電磁弁8を開き、旧液を完全に排出し、そ
れから再び電磁弁8を閉じて上記と同様の現像を繰り返
す。In addition, the properties of the organic resist applied to the substrate 3,
Although it depends on the film thickness, in some cases it may not be possible to completely remove the coated resist with one development, so in that case, open the solenoid valve 8 while rotating the spinner 4 at about 1100 rpm and remove the old resist. After the liquid is completely drained, the electromagnetic valve 8 is closed again and the same development as described above is repeated.
基板3に塗布された有機レジストの現像が完全に終了し
たら、電磁弁8を開け、現像液を排出するとともに、ス
ピンナー4を7Or p m程度の低速で回転させなが
ら純水ノズル10より純水を吐出し、基板3のリンスを
行う。この際、リンス液がスピンナーヘッド2内に溜る
ことなくスムーズに排出されるようにするためスピンナ
ー4内の廃液ロアの大きさにも注意を払う必要がある。When the development of the organic resist applied to the substrate 3 is completely completed, open the electromagnetic valve 8 to discharge the developer, and at the same time, while rotating the spinner 4 at a low speed of about 7 Or p m, pure water is supplied from the pure water nozzle 10. Discharge and rinse the substrate 3. At this time, it is necessary to pay attention to the size of the waste liquid lower in the spinner 4 so that the rinsing liquid is smoothly discharged without accumulating in the spinner head 2.
基板3のリンスが十分性われたら、スピンナー4を10
00〜2000r p mで回転し、それと同時に窒素
ノズル11より窒素を吐出し基板3の乾燥を行う。Once the substrate 3 has been sufficiently rinsed, turn the spinner 4 to 10
At the same time, nitrogen is discharged from the nitrogen nozzle 11 to dry the substrate 3.
このときスピンナーヘッド2の外周からの基板へのはね
かえりが考えられるが、チャンバー6側に向けてゆるや
かにテーパーをもたせることで、この問題が解決される
。At this time, it is possible that splashes from the outer periphery of the spinner head 2 may bounce onto the substrate, but this problem can be solved by creating a gentle taper toward the chamber 6 side.
最後に基板3の乾燥が終了したら、チャンバー蓋1を開
けて、基板3を取り出す。Finally, when the drying of the substrate 3 is completed, the chamber lid 1 is opened and the substrate 3 is taken out.
[発明の効果1
以上説明したように本発明は、基板上に塗布された有機
レジストを同一チャンバー内で露光、現像、リンス、乾
燥を行い剥離するため、小スペースでのレジスト剥離が
可能であり、ローダ−、アンローダ−を取り付けること
で自動機としての展開も可能である。[Advantageous Effects of the Invention 1] As explained above, in the present invention, the organic resist coated on the substrate is exposed, developed, rinsed, and dried in the same chamber and removed, making it possible to remove the resist in a small space. It can also be deployed as an automatic machine by attaching a loader and unloader.
また、スピンナーヘッドの形状を変更することにより、
ウェハ、角形基板でも必要最小限の薬液使用量で済み、
かつ十分な光量で処理を行うことができる。In addition, by changing the shape of the spinner head,
Even with wafers and rectangular substrates, only the minimum amount of chemical solution is required.
In addition, processing can be performed with a sufficient amount of light.
また、紫外線照射装置に用いるランプを選定することに
より、基板に塗布された有機レジストの感光基を変質さ
せることなく、感光させることができる。Furthermore, by selecting a lamp to be used in the ultraviolet irradiation device, it is possible to expose the organic resist to light without altering the photosensitive groups applied to the substrate.
さらに、露光→現像の原理に基づいたレジスト剥離であ
るため、有機溶剤を使った溶解反応の場合を生じる剥離
残りや、レジストの再付着、シミの発生等の不良も防止
できる効果がある。Furthermore, since resist stripping is based on the principle of exposure to development, it is effective in preventing defects such as residual peeling, resist re-adhesion, and staining that would otherwise occur in the case of a dissolution reaction using an organic solvent.
第1図は、本発明の一実施例を示す断面図である。
1・・・チャンバー蓋 2・・・スピンナーヘッ
ド3・・・基板 4・・・スピンナー訃
・・紫外線照射装置 6・・・チャンバー7・・・
廃液口 8・・・電磁弁9・・・アルカリ
性現像液ノズル
10・・・純水ノズル 11・・・窒素ノズル
第1図FIG. 1 is a sectional view showing one embodiment of the present invention. 1... Chamber lid 2... Spinner head 3... Substrate 4... Spinner head... Ultraviolet irradiation device 6... Chamber 7...
Waste liquid port 8...Solenoid valve 9...Alkaline developer nozzle 10...Pure water nozzle 11...Nitrogen nozzle Fig. 1
Claims (3)
ヘッドと、前記スピンナーヘッドを具備し基板を保持し
て回転するスピンナーと、前記スピンナーに接続して電
磁弁を有する廃液口と、前記基板表面に塗布された有機
レジストを感光させるための紫外線照射装置と、前記基
板表面にアルカリ性現像液を吐出するノズルと、前記基
板を洗浄するための純水を吐出するノズルと、前記基板
を乾燥させるための窒素を吐出するノズルとを有するこ
とを特徴とするレジスト剥離装置。(1) A spinner head in the shape of a dip tank that can store a liquid, a spinner equipped with the spinner head and rotating while holding a substrate, a waste liquid port connected to the spinner and having a solenoid valve, and a drain port connected to the spinner and having a solenoid valve; an ultraviolet irradiation device for exposing the applied organic resist, a nozzle for discharging an alkaline developer onto the surface of the substrate, a nozzle for discharging pure water for cleaning the substrate, and a nozzle for drying the substrate. 1. A resist stripping device comprising: a nozzle for discharging nitrogen.
けてテーパ状に拡径させたものであることを特徴とする
請求項第(1)項記載のレジスト剥離装置。(2) The resist stripping apparatus according to claim (1), wherein the spinner head has an outer peripheral edge tapered outward.
ジストの感光基を変質させることなく感光させる露光光
線を照射するランプを有するものであることを特徴とす
る請求項第(1)項記載のレジスト剥離装置。(3) The ultraviolet irradiation device includes a lamp that irradiates an exposure light beam that sensitizes the photosensitive groups of the organic resist coated on the substrate without altering their properties. resist stripping equipment.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28780090A JPH04162514A (en) | 1990-10-25 | 1990-10-25 | Exfoliation apparatus for resist |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28780090A JPH04162514A (en) | 1990-10-25 | 1990-10-25 | Exfoliation apparatus for resist |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04162514A true JPH04162514A (en) | 1992-06-08 |
Family
ID=17721916
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP28780090A Pending JPH04162514A (en) | 1990-10-25 | 1990-10-25 | Exfoliation apparatus for resist |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04162514A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7399578B2 (en) | 2001-05-14 | 2008-07-15 | Kabushiki Kaisha Toshiba | Alkaline solution and manufacturing method, and alkaline solution applied to pattern forming method, resist film removing method, solution application method, substrate treatment method, solution supply method, and semiconductor device manufacturing method |
CN108828905A (en) * | 2018-06-28 | 2018-11-16 | 武汉华星光电技术有限公司 | A kind of exposure side machine |
-
1990
- 1990-10-25 JP JP28780090A patent/JPH04162514A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7399578B2 (en) | 2001-05-14 | 2008-07-15 | Kabushiki Kaisha Toshiba | Alkaline solution and manufacturing method, and alkaline solution applied to pattern forming method, resist film removing method, solution application method, substrate treatment method, solution supply method, and semiconductor device manufacturing method |
CN108828905A (en) * | 2018-06-28 | 2018-11-16 | 武汉华星光电技术有限公司 | A kind of exposure side machine |
CN108828905B (en) * | 2018-06-28 | 2020-12-25 | 武汉华星光电技术有限公司 | Edge exposure machine |
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