JP2001052982A - Substrate developing apparatus and method therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a substrate developing apparatus and a method therefor, which prevent minute deposits from remaining of on the substrate, in particular on open frame and in a pattern-formed region, after the developing process. SOLUTION: After a substrate W, to which a developing solution has been supplied by a developing solution supply part 50, is subjected to a first rinsing process with a rinsing solution supply part (60), the surface of the substrate W is entirely heated by supplying heated nitrogen gas to the main surface of the substrate W from a heated gas supply part 80. After that, a second rinsing solution supply process is carried out again by the rinsing solution supply unit (60). By the heating process, deposits that are adhered on the substrate W after the supply of the developing solution are dried, and are easily washed out from the substrate by the second rinsing process, which is carried out for the substrate W immediately after the heating process. As a result, remaining of deposits on the substrate after the developing process can be effectively prevented.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] The present invention relates to a semiconductor wafer,
The present invention relates to a substrate developing apparatus and a substrate developing method for performing a developing process by supplying a developing solution to a photosensitive film formed on a substrate such as a glass substrate for a liquid crystal display device, a glass substrate for a photomask, and a substrate for an optical disk.

[0002]

2. Description of the Related Art As is well known, in a photolithography process, a resist is applied to a main surface of a substrate.
Exposure, development, and accompanying processes such as heat treatment are sequentially performed to form a pattern on the substrate. Generally, in these processes, first, a resist film is formed on a substrate by a resist coating device. Then, after the substrate is subjected to a heat treatment, the substrate on which the resist film is formed is transported to an exposing machine and exposed. After a post-exposure heat treatment,
The substrate is transported to the substrate developing device SD, and the substrate developing device SD
After the developing solution is supplied to the substrate and the developing process of the substrate proceeds after a predetermined time, a rinsing liquid is supplied to the substrate to perform the rinsing process. Thereafter, a drying process such as shaking-off drying is performed to complete the developing process, and is conveyed to a heat treatment device and a cooling treatment device to be subjected to a heat treatment to form a desired pattern on the substrate.

[0003]

At the time of developing processing in such a conventional series of substrate processing, a portion (hereinafter, referred to as a pattern forming region R) on a substrate as shown in FIG.
O or a small dot or satellite of about 0.1 μm in a portion where a pattern is not formed between O and a plurality of patterns P formed in a pattern forming region R (see FIG. 8). It has been found that a sticky sticky deposit E occurs. The attached matter E is minute, but may be as many as several thousand. If a large amount of the attached matter E is generated, a development defect is caused, which causes a problem. In particular, in recent years, a technique for making a pattern finer with the higher integration of a semiconductor device is required, and a line width of a pattern formed on a main surface of a substrate by using a high-resolution resist such as a chemically amplified resist. Is becoming smaller,
The deposits E have become non-negligible. Although the cause of the generation of the deposit E is unknown, the inventors of the present invention have conducted intensive studies and found that the developer remaining on the substrate is supplied with a developing solution and the residual development residue of the dissolved resist is washed off from the substrate by a rinsing process. And fine gel deposit E
Thus, it is presumed that it is adhered to the substrate while having a strong adhesive force. The adhered substance E cannot be washed away even if a normal rinsing process is performed after the supply of the developing solution, and remains on the substrate. Further, an anti-reflection film called BARC is generally formed on the substrate before applying the resist. However, this anti-reflection film has a rough surface as shown in FIG. It is considered that this is a factor that makes it difficult for the attached matter E to come in close contact with the attached matter.

The present invention has been made in view of the above circumstances, and has been developed in consideration of the above circumstances, and a substrate developing method capable of preventing a fine adhering substance from remaining on a substrate after development processing, particularly on an open frame or a pattern formation region of the substrate. An object is to provide an apparatus and a substrate developing method.

[0005]

The present invention has the following configuration in order to achieve the above object. In other words, the substrate developing apparatus according to claim 1 includes a substrate holding unit that holds the substrate in a horizontal posture, a developer supply unit that supplies a developer to a main surface of the substrate held by the substrate holding unit, and a developer. A first rinsing liquid supply unit for supplying a rinsing liquid to the main surface of the substrate to which the developing liquid has been supplied by the supply unit and performing a first rinsing process, and a substrate for heating the substrate after the first rinsing process Heating means, and second rinsing liquid supply means for supplying a rinsing liquid to the main surface of the substrate after the heat treatment by the substrate heating means and performing a second rinsing treatment. is there.

Further, the substrate developing device according to the present invention is characterized in that:
2. The substrate developing apparatus according to claim 1, wherein the substrate heating unit includes a heated gas supply unit that supplies a heated gas to the main surface of the substrate.

Further, the substrate developing device according to claim 3 is
2. The substrate developing apparatus according to claim 1, wherein the substrate heating means comprises light irradiation heating means for irradiating the main surface of the substrate with light to heat the substrate.

Further, the substrate developing device according to the present invention is characterized in that:
The substrate developing device according to any one of claims 1 to 3, wherein the first and second rinsing liquid supply means are shared by a single rinsing liquid supply means.

[0009] The method for developing a substrate according to claim 5 is characterized in that:
A developing solution supply step of supplying a developing solution to the main surface of the substrate held in a horizontal posture by the substrate holding means; A first rinsing liquid supply step for performing a treatment, a heat treatment step for performing a heat treatment on the substrate after the rinsing treatment, and a second rinsing by supplying a rinsing liquid to the main surface of the substrate after the heat treatment. And a second rinsing liquid supply step for performing processing.

[0010] The substrate developing method according to claim 6 is characterized in that:
According to a fifth aspect of the present invention, in the substrate developing method, the heat treatment step includes a heating gas supply step of supplying a heated heating gas to the main surface of the substrate.

[0011] The method for developing a substrate according to claim 7 may include:
6. The substrate developing method according to claim 5, wherein the heat treatment step includes a light irradiation heating step of irradiating the main surface of the substrate with light for heating.

In the substrate developing apparatus according to the first aspect of the present invention, a substrate heating means for heating the substrate after the first rinsing process on the main surface of the substrate supplied with the developing solution, and a main surface of the substrate after the heat treatment Is provided with a second rinsing liquid supply means for performing a second rinsing process on the substrate, thereby heating the main surface of the substrate after the first rinsing process to dry the deposits remaining on the main surface of the substrate. Can be followed by a second
The deposits dried by the rinsing process can be washed away from the main surface of the substrate and removed.

[0013] In the substrate developing apparatus according to the second aspect of the present invention, the substrate heating means is a heated gas supply means for supplying a gas heated to the main surface of the substrate. The main surface of the substrate can be heated, and the adhered substance adhering to the main surface of the substrate can be dried. As a result, the deposits on the main surface of the substrate can be effectively washed away and removed by the second rinsing process. In addition, since the heating gas supply means is provided in the substrate developing device, it is not necessary to provide a dedicated heat treatment device, so that the throughput is not reduced and the space efficiency of the entire device can be improved.

In the substrate developing apparatus according to the third aspect of the present invention, the substrate heating means is a light irradiation heating means for irradiating the main surface of the substrate with light to heat the main surface of the substrate. The main surface of the substrate can be heated, and the deposits adhering to the main surface of the substrate can be dried. As a result, the second
By the rinsing process, the deposits on the main surface of the substrate can be washed out and effectively removed. Further, since the light irradiation heating means is provided in the substrate developing device, it is not necessary to provide a dedicated heat treatment device, so that the throughput is not reduced and the space efficiency of the entire device can be improved.

In the substrate developing apparatus according to the fourth aspect of the present invention, the configuration of the apparatus can be simplified by using the single rinsing liquid supply means as the first and second rinsing liquid supply means.

According to a fifth aspect of the present invention, there is provided a substrate developing method, wherein a heat treatment step is performed on the substrate after the first rinsing liquid supply step, and a heat treatment step is performed on the main surface of the substrate after the heat treatment. By providing the second rinsing liquid supply step of performing the second rinsing process, it is possible to heat the main surface of the substrate after the first rinsing process and dry the deposits remaining on the main surface of the substrate, The deposits dried by the subsequent second rinsing treatment can be washed out and removed.

In the substrate developing method according to the present invention, the first rinsing liquid may be formed by supplying the heated gas to the main surface of the substrate. After the supply step, the main surface of the substrate can be heated, and it is possible to dry the deposits that adhere to the main surface of the substrate. As a result, deposits on the main surface of the substrate can be effectively removed by the subsequent second rinsing liquid supply step.

In the substrate developing method according to the present invention, the heat treatment step comprises a light irradiation heating step of irradiating the main surface of the substrate with light to heat the first surface of the substrate. The entire main surface of the substrate after the process can be heated more quickly, and the deposits adhering to the main surface of the substrate can be dried. As a result, deposits on the main surface of the substrate can be effectively removed.

[0019]

Embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 is a system configuration diagram of a substrate processing system 1 including a substrate developing device SD according to the present invention. The substrate processing system 1 includes a substrate storage cassette (not shown) and a transfer device, and an indexer ID for taking out a substrate before processing from the substrate storage cassette by the transfer device and storing the substrate after predetermined processing in the substrate storage cassette. A substrate processing area 12 in which a plurality of substrate processing apparatus groups for performing a predetermined process on a substrate, a transport unit TR for transporting the substrate to the substrate processing apparatus, and a transport device (not shown) are provided. And an interface unit IC for transferring a substrate between the substrate processing area 12 and the exposure apparatus ST.

The substrate processing area 12 includes a coating apparatus SC1 for applying a coating liquid for forming an antireflection film to the substrate on one side of the transport unit, and a chemically amplified resist liquid for the substrate. A coating device SC2 for coating
A developing device SD for performing a developing process on the substrate exposed by the exposure device ST is disposed, and heat processing devices HP1, HP2, HP3, and HP3 for performing a heat process on the substrate on the other side.
The PEB and cooling processing devices CP1, CP2, CP3, and CP4 that perform cooling processing on the substrate after the heat processing are arranged.

The substrate developing device SD according to the present invention is incorporated in such a substrate processing system 1 and performs a predetermined process on the main surface of the substrate W together with other substrate processing devices.

In FIG. 1, the heat treatment device and the cooling device are depicted as being arranged in a plane, but each heat treatment device HP and each cooling treatment device are arranged vertically. . In addition, the number of each processing device is not limited to the above-described one, and may be any number.

FIG. 2 shows an example of a substrate processing flow in the substrate processing system 1 and the exposure apparatus ST shown in FIG. The substrate processing procedure will be briefly described with reference to FIG. 2. First, substrates before processing stored in the substrate storage cassette are transferred one by one from the indexer unit ID to the transfer unit TR in the substrate processing area 12 by a transfer device (not shown). The transport unit TR is supplied to the coating unit SC1 for applying a coating solution for forming an anti-reflection film as an anti-reflection film on the substrate, and the substrate on which the anti-reflection film is applied is heated to evaporate the solvent component. Heat treatment apparatus HP1, a cooling processing apparatus CP1 for cooling the substrate after the heat treatment, a coating apparatus SC2 for applying a resist film on the substrate, a heat processing apparatus for heating the substrate coated with the resist liquid to volatilize the solvent component. H
P2 and a cooling processing device C for cooling the substrate after the heat treatment
While sequentially moving to P2, in each processing apparatus, a substrate that has been put in is taken out and a substrate to be processed is loaded, and a required processing is performed on the substrate by each processing apparatus. Thus, a resist film is formed on the main surface of the substrate. Next, the substrate having the resist film formed on the surface is transferred from the transport unit TR to the interface unit IF, and is carried into the exposure apparatus ST through the interface unit IF. Then, the substrate is exposed in the exposure apparatus ST, and the substrate on which the exposure processing has been completed is returned from the exposure apparatus ST to the interface unit IF, and is transferred to the transport unit TR through the interface unit IF.

The substrate after the exposure processing returned to the transport unit TR is heated by the transport unit TR in the heat treatment apparatus PEB.
And heat-treated by the heat treatment device PEB. This heat treatment promotes a chemical reaction in the exposed portion. Then, the substrate is transported from the heat treatment apparatus PEB to the cooling processing apparatus CP3 by the transport unit TR, and the substrate is cooled by the cooling processing apparatus CP3. This cooling stops the reaction in the exposed portion of the resist. Thereafter, the transport unit TR transports the substrate from the cooling processing device CP3 to the substrate developing device SD, and the substrate is developed. The substrate after the development process is transported to the HP 3 for performing post-baking after the development process, and after the post-baking, is sent to the CP 4 where the substrate is subjected to a cooling process and transported to the indexer ID.

Next, a first embodiment of the substrate developing apparatus according to the present invention will be described with reference to FIGS. FIG. 3 is a plan view showing the substrate developing device SD according to the first embodiment of the present invention. FIG. 4 is a schematic configuration diagram showing the substrate developing device SD according to the first embodiment of the present invention as viewed from the direction of arrow X shown in FIG.

The substrate developing device SD includes a rotation holding section 40 as a substrate holding means for rotating and holding the substrate W in a horizontal posture;
A developing solution supply unit 50 for supplying a developing solution to the main surface of the substrate W held by the rotation holding unit 40; and a rinsing liquid (a main solution) for supplying a developing solution and a heating gas to be described later. Rinse liquid supply unit 60 that supplies pure water in the embodiment)
A heating gas supply unit 80 that supplies a heating gas to the main surface of the substrate W to which the rinsing liquid has been supplied; and a control unit 110 that controls the operation of each mechanism provided in the substrate developing device SD.
And

As shown in FIG. 4, the rotation holding section 40 includes a rotation table 41 for sucking and holding the substrate W in a horizontal position, and a rotation table 41.
And a spin motor 43 that drives the rotary table 41 to rotate about the vertical direction via the rotary shaft 42. The turntable 40
Is not limited to a form that holds the substrate W by suction, and may be a turntable that holds the peripheral portion of the substrate W.

A scattering prevention cup 70 is arranged so as to cover the periphery of the substrate W, and the developer or rinse liquid scattered by the rotation of the substrate W is protected by the scattering prevention cup 70.
Will be recovered by Further, an outer wall 75 is arranged outside the scattering prevention cup.

As shown in FIG. 3, the developing solution supply unit 50 is located at a first standby position 55a on the left side of the substrate W in the paper plane during standby, and has a slit-shaped (not shown) having a length equal to or longer than the substrate. A developer supply nozzle 51 having a developer supply port, a developer supply source 56 (see FIG. 4) for supplying a developer to the developer supply nozzle 51, and a developer supply nozzle 51 and a developer supply source 56; And a developer supply pipe 58 for connecting and supplying the developer and supplying the developer.
The opening / closing valve 57 that supplies and stops the developer based on the control of the electrically connected control unit 110, the horizontal arm 52 that holds the developer supply nozzle 51, and the horizontal arm 52 A moving unit 54 to be connected;
The moving unit 54 has a first standby position 55a and a second standby position 5
5b and a ball screw 53 that is driven to rotate horizontally and linearly. Although not shown, the motor 59 is also electrically connected to the control unit 110 and is controlled by the control unit 110. Then, at the time of supplying the developing solution to the substrate, the developing solution supply nozzle 51 starts supplying the developing solution just before being located above the left end of the substrate W in FIG. 3, and the developing solution supply nozzle 51 has passed above the right end of the substrate W. Thereafter, the supply of the developer is stopped. Here, the developer supply nozzle 51 and the developer supply pipe 58 correspond to the developer supply means in the present invention.

The developing solution supply nozzle does not necessarily have to be a slit-shaped developing solution supply nozzle.
A type in which the developing solution is supplied on the substrate W by supplying the developing solution to the center portion of the substrate and rotating the substrate W may be used, and may have an arbitrary configuration.

The rinsing liquid supply unit 60 is disposed above the substrate W on the paper surface in FIG. 3 and has a rinsing liquid supply nozzle 61 for supplying a rinsing liquid to the main surface of the substrate W, and a rinsing liquid supply nozzle 61. A rinsing liquid supply source 65 for supplying a rinsing liquid; a rinsing liquid supply pipe 64 for connecting and connecting the rinsing liquid supply nozzle 61 and the rinsing liquid supply source 65; An opening / closing valve 66 for supplying and stopping the rinsing liquid based on control by the control unit 110 connected to the rinsing liquid supply nozzle support part 62 for supporting the rinsing liquid supply nozzle 61;
A support 67 for fixing the nozzle support 62 to the upper end thereof;
A nozzle rotation motor 63 is electrically connected to the control unit 110 and drives the rinse liquid supply nozzle 61 so that the rinse liquid supply nozzle 61 can rotate on the substrate under the control of the control unit 110. You. The rinsing liquid supply nozzle 61 and the rinsing liquid supply pipe 64 correspond to the rinsing liquid supply unit of the present invention.

In FIG. 3, the heating gas supply unit 80
, And are arranged in a height relationship so as not to interfere with the developer supply nozzle 51 when the developer supply nozzle 51 moves horizontally along the substrate W described above. The heated gas supply unit 80 includes a gas supply nozzle 81 that blows a gas such as nitrogen gas onto the main surface of the substrate W, and a gas supply nozzle 81 that is at least above the edge of the substrate W and above the center of the substrate W. A nozzle holding arm 82 which expands and contracts so as to reciprocate horizontally in a horizontal direction, a nitrogen gas supply source 83 which supplies nitrogen gas to a gas supply nozzle 81, and a gas supply nozzle 81 and a gas supply source 83. A nitrogen gas supply pipe 84 that is connected and connected, a heating unit 85 that heats the nitrogen gas passing through the nitrogen gas supply pipe 84 by a heating unit such as an electric heating coil, and is provided in the middle of the nitrogen gas supply pipe 84 and is electrically connected. And an opening / closing valve 86 for supplying and stopping the nitrogen gas based on the control by the control unit 110. The gas supply nozzle 81, the nitrogen gas supply pipe 84, and the heating unit 85 correspond to a heated gas supply unit in the present invention.

Next, the operation of the substrate developing apparatus SD according to the first embodiment having the above-described configuration during the developing process will be described. When the substrate W after the heat treatment after the exposure processing is carried into the substrate developing device SD by the transport unit TR, the substrate W is suction-held on the upper surface of the turntable 41. Then, first, the ball screw 53 is rotated by driving the motor 59,
Moving section 5 connected to horizontal arm 52 of developer supply section 50
4 starts moving horizontally and linearly along the ball screw 53, and accordingly, the developer supply nozzle 51 maintains a predetermined height relationship between itself and the main surface of the substrate W. The substrate W moves from the left side to the right side. FIG.
When the developing solution supply nozzle 51 reaches a position just before the left end of the substrate W, the opening / closing valve 57 is opened, and the stationary state of the substrate W from the slit-like developing solution supply port provided at the tip of the developing solution supply nozzle 51 is increased. When the developer supply nozzle 51 passes through the right end of the substrate W, the supply of the developer is stopped. Thereby, the developer can be evenly applied on the substrate W.

After the developing solution is applied on the entire surface of the substrate W as described above, this state is maintained for a certain period of time to advance the development. Further, the developer supply nozzle 51 is moved to the standby position 55b, and the scattering prevention cup 70 is raised as shown by a two-dot chain line in FIG. After a lapse of a predetermined time, a rinsing liquid is supplied to the substrate W by the rinsing liquid supply unit 60, and a first rinsing process for stopping the progress of the development is performed. In the first rinsing process, first, the nozzle rotation motor 63 is driven by the column 67 so that the tip of the rinsing liquid supply nozzle 61 is located above the center of the substrate.
Is rotated to drive the nozzle support 62. When the rinse liquid supply nozzle 61 reaches above the center of the substrate, the opening / closing valve 66 is opened and the rinse liquid is supplied from the rinse liquid supply source 65 while rotating the substrate on the turntable 41 by the spin motor 43 to supply the rinse liquid. The progress of development is stopped by replacing the developing solution on W with a rinsing solution. When the replacement with the rinsing liquid is completed, the opening / closing valve 66 is closed to stop the supply of the rinsing liquid, and the rinsing liquid supply nozzle 61 is retracted from above the substrate W by the driving of the nozzle rotation motor 63 to thereby perform the first rinsing. The process ends. Then, the substrate W is further rotated, and after the substrate W is shaken off and dried, the rotation of the turntable 41 is stopped.

Next, the substrate is heated. Here first,
By driving the spin motor 43, the substrate W on the turntable 41 is moved to, for example, about several tens rpm. / Sec. At low speed. Then, the open / close valve 86 is opened, and the nitrogen gas supply source 8 is opened.
The supply of nitrogen gas from 3 is started. The nitrogen gas is heated to a temperature of, for example, 40 ° C. or more by the heating unit 85 and the substrate W
Supplied to the main surface. Then, the nozzle holding arm 82 expands and contracts in the direction of the arrow shown in FIG. 4 in a state where the nitrogen gas is supplied, and the substrate W is dried while supplying the heating gas to the entire surface of the substrate W for a predetermined time, for example, 1 minute. Deposits on the substrate W, which are bases of development defects that could not be washed away from the substrate W even by the rinsing process, are dried to facilitate removal from the substrate W.

Finally, the second rinse liquid supply unit 60
The deposits on the substrate W that cause development defects are washed away by the rinsing process. That is, in the second rinsing process, similarly to the first rinsing process, first, the nozzle rotating motor 63 supports the nozzle via the support 67 so that the tip of the rinsing liquid supply nozzle 61 is located above the center of the substrate. The part 62 is driven to rotate. When the rinsing liquid supply nozzle 61 reaches above the center of the substrate, the substrate W on the turntable 41 is rotated by the spin motor 43.
The opening / closing valve 66 is opened while rotating the substrate, and the rinsing liquid from the rinsing liquid supply source 65 is supplied to the substrate W for a predetermined time, and adheres to the substrate W by the flow of the rinsing liquid and the centrifugal force due to rotation. The attached matter is separated from the surface of the substrate W and flows away from the substrate W. After a lapse of a predetermined time, the opening and closing valve 66 is closed to stop the supply of the rinsing liquid, and the rinsing liquid supply nozzle 61 is rotated by the nozzle rotation motor 63.
The second rinsing process is completed by retracting the substrate W from above by driving. Then, further rotate the substrate W,
After the substrate W has been shaken off and dried, the rotation of the turntable 41 is stopped. In the present embodiment, the first and second rinsing processes are performed by a single rinsing liquid supply nozzle 61. However, a plurality of rinsing liquid supply nozzles 61 are provided to perform the first and second rinsing. It is good also as a structure used separately at the time of a process.

In the developing process performed in this manner, after a developing solution is supplied to the substrate W to perform a rinsing process, a heating gas is supplied to the main surface of the substrate W to adhere to the substrate W. The fine gel-like deposit E can be dried, and it is easy to wash off the deposit E from the substrate W by a subsequent rinsing process. According to the experiments of the present inventors, in the normal development processing, thousands of adhered substances E remaining in the open frame O and the pattern formation region R of one substrate after the development processing of the substrate is completed are reduced in this embodiment. It has been confirmed that the number has been drastically reduced to several tens by actually carrying out the embodiment.

Next, a second embodiment of the present invention will be described with reference to FIG. FIG. 5 is a schematic configuration diagram showing a substrate developing device 100 according to the second embodiment. In addition,
In the second embodiment, the same parts as those in the first embodiment are denoted by the same reference numerals as those in FIG. 4 and the description thereof is omitted. The main difference is that after the first rinsing process, the substrate W
The only difference is that, instead of supplying heated nitrogen gas, a configuration including a light irradiation heating unit 90 is adopted as the substrate heating means for performing the heating process described above. The other configuration and the processing operation are the same as those of the first embodiment. Since this is the same as the embodiment, a detailed description is omitted.

As shown in FIGS. 5 and 6, the light irradiation heating section 90 includes a light emitting body 91 for performing light irradiation heating on the main surface of the substrate W under the control of the control section 110, and a light emitting body having the light emitting body 91. And a body holding means 92. The luminous body 91 corresponds to the light irradiation heating means in the present invention.

As shown in FIG. 6, a plurality of luminous bodies 91 are arranged such that rod-shaped infrared lamps cover the substrate W at regular intervals. The luminous body 91 may be a halogen lamp, a xenon arc lamp, or the like, in addition to the infrared lamp. The length and number of the light-emitting bodies 41 are determined as appropriate so as to cover a range approximating the area of the main surface of the substrate W.

The heating of the substrate by the light irradiation heating means of the second embodiment is also performed after the first rinsing process on the substrate W, as in the first embodiment. Here, when heating the substrate W, the luminous body 9 is controlled by the control of the control unit 110.
1 is turned on, and the main surface of the substrate W in a stationary state on the turntable 41 is subjected to light irradiation heat treatment at a temperature of 40 ° C. or more for about 1 minute. As described above, even when the substrate heating means is configured as shown in FIGS. 5 and 6, the same effect as that of the first embodiment can be obtained. Further, the entire surface of the substrate can be heated with a simple configuration, which is effective.

In the first embodiment, a single gas supply nozzle 81 is disclosed. However, a plurality of gas supply nozzles may be provided, and only one or more gas supply nozzles are required. Also,
When the substrate is heated, the nozzle holding arm 82 expands and contracts so that the gas supply nozzle 81 reciprocates horizontally between the upper end of the substrate W and the upper center of the substrate W. The gas supply nozzle 81 may be of a fixed type or may have other moving means and methods such as swinging.
What is necessary is just a structure which can heat the whole surface.

In the second embodiment, a plurality of light emitters 91 of the light irradiation heating unit 90 are provided.
May be a single structure as long as the substrate W can be heated by light irradiation.

Further, in the second embodiment, the substrate W is kept stationary during the substrate heating process. However, the configuration may be such that the heating process is performed while rotating the substrate.

In each of the above embodiments, the heating temperature by the substrate heating means is set to 40 ° C. or more, and the heating time is set to about 1 minute. However, the present invention is not limited to these values. It is sufficient that the heating temperature and the heating time are such that the attached matter is sufficiently dried.

Further, the substrate heating means of the present invention is not limited to those of the first and second embodiments. For example, a heating means is provided in the rotary table 41 to heat the substrate W in a series of development processing steps. Any configuration is possible as long as it can be performed.

[0047]

According to the substrate developing apparatus of the present invention, the substrate that has been subjected to the first rinsing process after the supply of the developing solution can be used as a substrate.
Since the substrate is heated by the substrate heating means and further subjected to the second rinsing process, it is possible to easily wash off the deposits on the substrate W that could not be washed away by the first rinsing process.

Further, according to the substrate developing method of the present invention, the substrate after the first rinsing process after the supply of the developing solution is heated and further subjected to the second rinsing process.
Deposits on the substrate that could not be washed away by the rinsing process can be easily washed off from the substrate.

[Brief description of the drawings]

FIG. 1 is a system configuration diagram of a substrate processing system including a substrate developing device according to the present invention.

FIG. 2 is a view showing a processing flow of a substrate in the substrate processing system and the exposure apparatus shown in FIG. 1;

FIG. 3 is a plan view illustrating a schematic configuration of the substrate developing device according to the first embodiment.

FIG. 4 is a schematic diagram illustrating a configuration of the substrate developing device according to the first embodiment.

FIG. 5 is a schematic diagram illustrating a configuration of a substrate developing device according to a second embodiment.

FIG. 6 is a schematic plan view showing a configuration of a light irradiation heating unit according to a second embodiment.

FIG. 7 is a schematic plan view showing a state of a deposit on a conventional substrate.

FIG. 8 is a schematic sectional view showing a state of a deposit on a conventional substrate.

[Explanation of symbols]

 SD, 100 Substrate developing device 40 Rotation holding unit 50 Developer supply unit 60 Rinse liquid supply unit 80 Heated gas supply unit 81 Gas supply nozzle 82 Nozzle holding arm 83 Gas supply source 84 Nitrogen gas supply pipe 85 Heating unit 86 Open / close valve 90 Light Irradiation heating unit 91 Light emitting body 92 Light emitting body holding means 110 Control unit W substrate

 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Hiroshi Matsui 4-chome Tenjin Kitamachi 1-chome, Horikawa-dori, Nokyo, Kamigyo-ku, Kyoto F-term (reference) 2H096 AA25 AA27 GA17 GA33 4F041 AA05 AB02 AB08 BA46 4F042 AA06 DA09 EB05 EB09 EB18 EB30 5F046 LA04 LA08 LA14

Claims (7)

[Claims] 1. A substrate holding means for holding a substrate in a horizontal position; a developer supply means for supplying a developer to a main surface of the substrate held by the substrate holding means; First rinsing liquid supply means for performing a first rinsing process by supplying a rinsing liquid to the main surface of the substrate to which the liquid has been supplied, and substrate heating means for heating the substrate after the first rinsing process And a second rinsing liquid supply unit for supplying a rinsing liquid to the main surface of the substrate after the heat treatment by the substrate heating unit and performing a second rinsing treatment. apparatus. 2. The substrate developing apparatus according to claim 1, wherein said substrate heating means comprises a heating gas supply means for supplying a gas heated to a main surface of the substrate. . 3. The substrate developing apparatus according to claim 1, wherein said substrate heating means comprises light irradiation heating means for irradiating a main surface of the substrate with light to heat said main surface. . 4. The substrate developing apparatus according to claim 1, wherein said first and second rinsing liquid supply means are shared by a single rinsing liquid supply means. Developing device. 5. A developing solution supply step of supplying a developing solution to a main surface of a substrate held in a horizontal posture, and supplying a rinsing liquid to the main surface of the substrate after supplying the developing solution to the first surface. A first rinsing liquid supply step of performing a rinsing treatment, a heating treatment step of performing a heating treatment on the substrate after the first rinsing treatment, and supplying a rinsing liquid to a main surface of the substrate after the heating treatment. A second rinsing liquid supply step of performing a second rinsing process. 6. The substrate developing method according to claim 5, wherein said heat treatment step comprises a heating gas supply step of supplying a heating gas heated to the main surface of the substrate. Method. 7. The substrate developing method according to claim 5, wherein the heat treatment step comprises a light irradiation heating step of irradiating a main surface of the substrate with light to heat it.