JPH0356041Y2 - - Google Patents
Info
- Publication number
- JPH0356041Y2 JPH0356041Y2 JP1982199917U JP19991782U JPH0356041Y2 JP H0356041 Y2 JPH0356041 Y2 JP H0356041Y2 JP 1982199917 U JP1982199917 U JP 1982199917U JP 19991782 U JP19991782 U JP 19991782U JP H0356041 Y2 JPH0356041 Y2 JP H0356041Y2
- Authority
- JP
- Japan
- Prior art keywords
- resist
- wafer
- mounting table
- substrate mounting
- solvent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 15
- 238000012545 processing Methods 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 239000002904 solvent Substances 0.000 claims description 10
- 239000003960 organic solvent Substances 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 25
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 14
- 238000000034 method Methods 0.000 description 12
- 238000001259 photo etching Methods 0.000 description 7
- 238000012958 reprocessing Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
Description
【考案の詳細な説明】
(1) 考案の技術分野
本考案は、フオトエツチング工程において、前
工程で数回繰り返し行なう一枚毎のウエハ面また
はフオトマスク基板面のレジスト剥離、水洗浄、
乾燥を高速処理することを特徴とするレジスト処
理装置に関するものである。[Detailed explanation of the invention] (1) Technical field of the invention The invention focuses on the following steps: In the photoetching process, resist stripping, water washing, and water washing are performed on the surface of each wafer or photomask substrate, which are repeated several times in the previous process.
The present invention relates to a resist processing apparatus characterized by high-speed drying.
(2) 技術の背景
最近はICからLSIとトランジスタ回路が高密度
化してきており、従つてフオトエツチング工程も
繰り返される回数が多くなつてきている。フオト
エツチングは写真食刻法とも言われており、第1
段階は清浄された試料面に種々の条件下でフオト
レジストのコーテングを行う。第2段階は塗布し
たフオトレジストを乾燥させることで有機溶剤を
揮発させる。第3段階はフオトレジスト膜上にフ
オトマスクを密着させ、最適条件で紫外線を露光
させる。第4段階は試料面を現像液を用いて現像
し、水洗後ポストベーキングでレジストを硬化さ
せ密着を完全にする。第5段階は熱酸化SiO2膜
のエツチングをエツチング液で行う。最後の第6
段階はフオトマスクの部分でエツチング処理によ
るレジストを除去することで、このフオトエツチ
ング工程が終了する。本考案の工程は前述の最後
のフオトエツチング工程であり、試料の再使用に
当たり表面清浄が欠せない行程である。この行程
はアセトン等の溶媒を用いて試料面のレジスト剥
離して、試料面をレジスト剥離の残留物等と共に
純水水洗で清浄し、試料の乾燥を行なう試料の再
処理に関係するものである。(2) Background of the technology Recently, the density of ICs, LSIs, and transistor circuits has become higher, and as a result, the number of times the photo etching process is repeated is increasing. Photo etching is also called photo-etching, and is the first
The step is to coat the cleaned sample surface with photoresist under various conditions. In the second step, the applied photoresist is dried to evaporate the organic solvent. In the third step, a photomask is brought into close contact with the photoresist film and exposed to ultraviolet light under optimal conditions. In the fourth step, the sample surface is developed using a developer, washed with water, and then post-baked to harden the resist and achieve complete adhesion. In the fifth step, the thermally oxidized SiO 2 film is etched using an etching solution. the last 6th
The photo-etching process is completed by removing the etched resist from the photomask area. The process of the present invention is the last photoetching process mentioned above, and surface cleaning is essential for reusing the sample. This process is related to sample reprocessing, in which the resist on the sample surface is removed using a solvent such as acetone, the sample surface is cleaned with pure water along with any residue from the resist removal, and the sample is dried. .
(3) 従来技術と問題点
従来、フオトエツチング工程のウエハ再処理で
あるレジスト剥離はアセトン等の溶媒を入れた容
器で数十枚の試料を処理しており、この処理をバ
ツチ処理といわれている。この処理工程で1枚ま
たは数枚の試料を処理する場合、バツチ処理と同
じく行なうと使用するアセトン等の溶媒と同量が
必要であり、時間も同じくかかるものである。従
つて処理する試料の数に対してアセトン等の溶媒
が不経済であり、時間がかかりすぎて作業効率が
悪かつた。(3) Conventional technology and problems Conventionally, resist stripping, which is wafer reprocessing in the photoetching process, involves processing dozens of samples in a container containing a solvent such as acetone, and this process is called batch processing. There is. When treating one or several samples in this treatment step, the same amount of solvent such as acetone is required and the same amount of time is required if it is carried out in the same way as batch treatment. Therefore, solvents such as acetone are uneconomical relative to the number of samples to be treated, and the process takes too much time, resulting in poor working efficiency.
(4) 考案の目的
本考案の目的は、上述の欠点に鑑みて、ウエハ
再処理において1枚または数枚のウエハだけの場
合、アセトン等の溶媒が少量で済む経済的に有用
であり、前述の処理時間が従来より短時間で済む
高速処理を提供することにある。他の目的はレジ
スト剥離と同様な動作でウエハを純水で水洗し清
浄する高速処理を提供することにある。(4) Purpose of the invention In view of the above-mentioned drawbacks, the purpose of the present invention is to provide an economically useful method that requires only a small amount of solvent such as acetone when reprocessing only one or several wafers. The purpose of the present invention is to provide high-speed processing that requires less processing time than conventional methods. Another purpose is to provide high-speed processing for cleaning wafers by washing them with pure water in an operation similar to resist stripping.
(5) 考案の構成
そしてこの目的は、本考案によれば、レジスト
が塗布された基板が載置され、且つ回転可能な基
板載置台と該基板載置台の上方に設けられ、加熱
を必要とせずに前記レジストを溶かす有機溶媒を
滴下する手段を備え、該有機溶媒を前記基板上に
滴下し、前記基板載置台を高速回転させることに
よつて遠心力により前記レジストを除去するよう
にしたことを特徴としたレジスト処理装置を提供
することによつて達成される。(5) Structure of the invention According to the invention, the present invention provides a rotatable substrate mounting table on which a substrate coated with a resist is placed, and a rotatable substrate mounting table provided above the substrate mounting table, which does not require heating. The resist is further provided with a means for dropping an organic solvent that dissolves the resist without causing a drop, and the resist is removed by centrifugal force by dropping the organic solvent onto the substrate and rotating the substrate mounting table at high speed. This is achieved by providing a resist processing apparatus having the following characteristics.
(6) 考案の実施例
以下、本考案の一実施例を図面に基づいて説明
する。(6) Embodiment of the invention Hereinafter, an embodiment of the invention will be described based on the drawings.
第1図、第2図において本実施例はモータに連
動する円柱状の回転軸2上面には、中央部に排気
孔1が設けられこれと連動する放射状の排気溝3
を備えた円板状のウエハ固定台4が水平に支持さ
れる構成を有し、前述ウエハ固定台4の上面で中
心を合わせるようにウエハ5がウエハ固定台4と
一体の回転軸2の排気孔1を介してウエハ固定台
4の排気溝3より真空を引くことで真空吸着固定
保持される構成をなし、前述ウエハの中心上方向
から溶媒が滴下するようにしたノズル6がウエハ
固定台4の中心線上に位置している構成となつて
いる。 In FIGS. 1 and 2, the present embodiment has a cylindrical rotating shaft 2 that is connected to a motor, and an exhaust hole 1 is provided in the center of the upper surface of the rotary shaft 2, and radial exhaust grooves 3 that are connected to this
It has a structure in which a disk-shaped wafer fixing table 4 with The wafer is fixed and held by vacuum suction by drawing a vacuum from the exhaust groove 3 of the wafer fixing table 4 through the hole 1, and the nozzle 6, which drips the solvent from above the center of the wafer, is attached to the wafer fixing table 4. The structure is such that it is located on the center line of
前述のウエハ5の上面にノズル6より加熱を必
要としないアセトン等の有機溶媒を例えば50乃至
60c.c.ウエハ5面のレジスト7上に滴下する。 An organic solvent such as acetone that does not require heating is applied to the upper surface of the wafer 5 from the nozzle 6 at
60c.c. Drop onto the resist 7 on the 5th side of the wafer.
次に回転軸2を例えば5000乃至7000rpm位の高
速度で回転させればウエハ5も回転してレジスト
7及び溶媒が遠心力によつて外周方向へ離散され
る。 Next, when the rotating shaft 2 is rotated at a high speed of, for example, 5,000 to 7,000 rpm, the wafer 5 also rotates, and the resist 7 and the solvent are dispersed toward the outer circumference by centrifugal force.
また、ウエハ5を回転させながら加熱を必要と
しないアセトン等の有機溶媒を滴下しても同じ効
果が得られる。 The same effect can also be obtained by dropping an organic solvent such as acetone that does not require heating while rotating the wafer 5.
次に、第3図に示すように、真空吸収されてい
るウエハ5の中心と外周の中間の上方向に設けら
れた放水管8からウエハ5上に純水が放出され、
ウエハ台4を低速回転しながらウエハ5を水洗い
し、次に高速回転で水分をウエハ5面から振り切
る。従つてウエハ5面は洗浄される。 Next, as shown in FIG. 3, pure water is discharged onto the wafer 5 from a water discharge pipe 8 provided upward between the center and the outer periphery of the wafer 5, which is being vacuum-absorbed.
The wafer 5 is washed with water while rotating the wafer table 4 at a low speed, and then the water is shaken off from the surface of the wafer 5 by rotating at a high speed. Therefore, five surfaces of the wafer are cleaned.
次に前述のウエハ5をベーク炉に入れて残留水
を乾燥させることで再処理に必要な工程が終える
ことになる。 Next, the above-mentioned wafer 5 is placed in a baking oven to dry the residual water, thereby completing the steps necessary for reprocessing.
(7) 考案の効果
以上の説明により、本考案は1枚または数枚の
ウエハまたはフオトマスク基板のレジスト剥離を
行なう場合は、数十枚のウエハのレジスト剥離を
行なうバツチ処理と比較して溶媒が極少量で済む
ため経済的であり、処理時間が少なくて済むので
作業効率が良い。(7) Effects of the invention As explained above, the present invention requires less solvent when stripping resist from one or several wafers or photomask substrates compared to batch processing where resist stripping is performed from dozens of wafers. It is economical because only a very small amount is required, and the processing time is short, resulting in good work efficiency.
第1図は本考案のレジスト処理装置の一実施例
の側面図、第2図は前記実施例の要部の平面図、
第3図は第1図の実施例におけるウエハ洗浄工程
を説明する側面図である。
2……回転軸、4……ウエハ台、5……ウエ
ハ、6……ノズル、7……レジスト、8……放水
管。
FIG. 1 is a side view of an embodiment of the resist processing apparatus of the present invention, and FIG. 2 is a plan view of the main parts of the embodiment.
FIG. 3 is a side view illustrating the wafer cleaning process in the embodiment of FIG. 1. 2...Rotation axis, 4...Wafer stand, 5...Wafer, 6...Nozzle, 7...Resist, 8...Water pipe.
Claims (1)
可能な基板載置台と、 該基板載置台の上方に設けられ、加熱を必要
とせずに前記レジストを溶かす有機溶媒を滴下
する溶媒滴下手段と、 該溶媒滴下手段によつて前記有機溶媒を前記
基板上に滴下させた後、前記基板載置台を高速
回転させることによつて前記レジストを遠心力
により外周方向へ離散させて除去する手段とを
備えたことを特徴とするレジスト処理装置。 (2) 前記基板載置台上方にはウエハを洗浄するた
めに放水する手段を設けてなることを特徴とす
る実用新案登録請求の範囲第1項記載のレジス
ト処理装置。[Claims for Utility Model Registration] (1) A rotatable substrate mounting table on which a resist-coated substrate is placed, and a rotatable substrate mounting table provided above the substrate mounting table to melt the resist without the need for heating. a solvent dropping means for dropping an organic solvent; and after the organic solvent is dropped onto the substrate by the solvent dropping means, by rotating the substrate mounting table at high speed, the resist is moved in an outer circumferential direction by centrifugal force. 1. A resist processing apparatus, comprising means for discretely removing the resist. (2) The resist processing apparatus according to claim 1, wherein means for discharging water for cleaning the wafer is provided above the substrate mounting table.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19991782U JPS59104533U (en) | 1982-12-29 | 1982-12-29 | Resist processing equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19991782U JPS59104533U (en) | 1982-12-29 | 1982-12-29 | Resist processing equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59104533U JPS59104533U (en) | 1984-07-13 |
JPH0356041Y2 true JPH0356041Y2 (en) | 1991-12-16 |
Family
ID=30425442
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19991782U Granted JPS59104533U (en) | 1982-12-29 | 1982-12-29 | Resist processing equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59104533U (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2743274B2 (en) * | 1988-07-01 | 1998-04-22 | 東京エレクトロン株式会社 | Substrate processing device and substrate transfer device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54103034A (en) * | 1978-01-30 | 1979-08-14 | Matsushita Electric Ind Co Ltd | Automatic developer |
JPS5596944A (en) * | 1979-01-17 | 1980-07-23 | Matsushita Electric Ind Co Ltd | Developing method |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55154548U (en) * | 1979-04-23 | 1980-11-07 |
-
1982
- 1982-12-29 JP JP19991782U patent/JPS59104533U/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54103034A (en) * | 1978-01-30 | 1979-08-14 | Matsushita Electric Ind Co Ltd | Automatic developer |
JPS5596944A (en) * | 1979-01-17 | 1980-07-23 | Matsushita Electric Ind Co Ltd | Developing method |
Also Published As
Publication number | Publication date |
---|---|
JPS59104533U (en) | 1984-07-13 |
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