JPH05226242A - Apparatus and method for developing - Google Patents

Abstract

PURPOSE:To remove a cleaning liquid or the like so as not to be left on a body to be developed in a cleaning operation after a developing operation in a developing apparatus wherein an exposed resist film formed on a wafer is developed and a developing solution or the like after the developing operation is dried. CONSTITUTION:The title apparatus is provided with at least the following: a developing-solution nozzle 36 provided with a discharge port 37 for a developing solution; a cleaning-liquid nozzle 38 provided with a discharge port 39 for a cleaning liquid; first movement means 27, 28 which move at least one out of the developing-solution nozzle 36 and the cleaning-liquid nozzle 38 in such a way that at least one discharge port for the developing-solution nozzle 36 and the cleaning-liquid nozzle 38 is faced with a wafer-mounting part 23; and first rotation means 24, 25 which turn the wafer-mounting part 23 around a shaft perpendicular to the opposite face of the wafer-mounting part 23. The title apparatus includes the following: a gas introduction port 35; a gas nozzle 33 provided with a spouting port 40; and second movement means 31, 32 which move the gas nozzle 33 in such a way that the spouting port 40 of the gas nozzle 33 is faced with the wafer-mounting part 23.

Description

Detailed Description of the Invention

(Table of Contents) -Industrial application field-Conventional technology (Figs. 5 to 7) -Problems to be solved by the invention-Means for solving the problem-Action-Example (1) First example Example (FIGS. 1 and 2) (2) Second Example (FIGS. 3 and 4)

[0002]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a developing device and a developing method, and more specifically, to a developing device for developing an exposed resist film formed on a wafer and drying a developing solution after the development. It relates to a developing method.

[0003]

2. Description of the Related Art FIG. 5 (a) is a block diagram of a conventional developing apparatus for developing an exposed resist film formed on a wafer and drying a cleaning liquid after the development, and FIG. It is a side surface block diagram which shows the detail of a wafer mounting part.

In FIGS. 5 (a) and 5 (b), 1 is a cup for receiving a developing solution or the like and discharging the developing solution or the like through an outlet 2, 3 is a disk-shaped wafer mounting portion, and is a mounting surface. An exhaust port (not shown) for vacuum chucking the wafer is formed in the. Reference numeral 4 is a spin motor for rotating the wafer mounting portion 1, and 5 is a rotation shaft of the wafer mounting portion 1 which is common to the rotation shaft of the spin motor 4, and the rotation shaft 5 rotates together with the rotation around the center of the rotation shaft 5. You can also move yourself up and down. 6
Is a cylinder, 7 is a developing solution nozzle 13 and a cleaning solution nozzle 1.
An arm 6 is attached, 8 is a rotating shaft for rotating the arm 7 to move the developing solution nozzle 13 and the cleaning solution nozzle 16 above the wafer mounting portion 3, and 9 is a discharging port 14 for discharging the developing solution. Inlet for introducing the developing solution into the developing solution nozzle 13, 1
Reference numeral 0 denotes an inlet of the cleaning liquid to the cleaning liquid nozzle 16 that discharges the cleaning liquid that replaces and cleans the developing liquid on the wafer after development with the discharge port 17.

Next, a conventional developing method using the above developing device will be described with reference to FIGS. 6 (a), 6 (b), 7 (c),
This will be described with reference to (d). First, the rotating shaft 5 is moved upward, and the wafer 1 on which the exposed resist film 12 is formed
1 is placed on the wafer placing part 3 with the resist film 12 side facing up, and then the rotating shaft 5 is moved downward so that the wafer placing part 3 fits inside the cup 1 (FIG. 6A). ..

Next, the developing solution nozzle 13 is moved above the wafer mounting portion 3, and the developing solution 15 is ejected onto the wafer 11 from the ejection port 14 so that the resist film 12 is covered by spontaneous flow.

Next, after maintaining this state for a predetermined time,
The spin motor 4 is rotated to flow and scatter the developer 15 on the wafer 11 (FIG. 6B). Then, the wafer 11
By continuing to discharge the cleaning liquid 18 from the discharge port 17 of the cleaning liquid nozzle 16 while rotating, the development is stopped and the developing liquid on the surface of the wafer 11 is replaced with the cleaning liquid 18 for cleaning (FIG. 7C). ).

Next, the discharge of the cleaning liquid 18 is stopped, the rotation speed of the spin motor 4 is increased, and the cleaning liquid 18 remaining on the wafer 11 is caused to flow and scatter by the centrifugal force due to the rotation, whereby the cleaning liquid 18 is removed from the surface of the wafer 11. When removed and dried, development is completed (FIG. 7 (d)).

[0009]

Incidentally, FIG. 7 (d)
As shown in, when the cleaning liquid 18 is removed by using the centrifugal force due to the rotation, the magnitude of the centrifugal force is different between the peripheral portion and the central portion of the wafer 11. Therefore, the cleaning liquid 18 flows slowly in the central portion of the wafer 11 having a small centrifugal force, and the cleaning liquid 1
In many cases, 8 is not completely removed and remains.

Therefore, the cleaning liquid 1 containing a minute amount of resist material
8 remains, and it may remain as a stain after drying. For this reason, there are problems that etching cannot be performed normally and the wafer is contaminated in the subsequent steps.

The present invention has been made in view of the problems of the prior art, and a developing device capable of removing a cleaning liquid or the like so as not to remain on an object to be developed at the time of cleaning after development, and The purpose is to provide a developing method.

[0012]

The above-mentioned problems are, firstly, a wafer mounting portion, a developing solution nozzle having a developing solution ejection port, a cleaning solution nozzle having a cleaning solution ejection port, the developing solution nozzle, and A first moving unit that moves at least one of the developing solution nozzle and the cleaning solution nozzle such that at least one of the cleaning solution nozzles and the wafer mounting portion face each other; A developing device comprising at least a first rotating means for rotating the wafer mounting part around an axis perpendicular to a facing surface of the mounting part, the gas nozzle having a gas inlet and a gas outlet, and the gas nozzle of the gas nozzle. The present invention is achieved by a developing device including a second moving unit that moves the gas nozzle so that the ejection port and the wafer mounting unit face each other. The apparatus has a second rotating means for rotating the gas nozzle about an axis perpendicular to the facing surface in a state where the wafer mounting portion and the jet outlet of the gas nozzle are opposed to each other. Thirdly, a step of developing by coating the photosensitive film on the exposed wafer with a developing solution, which is achieved by the developing device according to the invention of claim 1, and rotating the wafer and cleaning the surface of the wafer with a cleaning solution. By spraying, the step of stopping the development, scattering and flowing the developing solution, and replacing the cleaning solution with the cleaning solution to clean the developing solution remaining on the wafer surface, and the cleaning solution remaining on the wafer In the developing method including a step of removing the cleaning solution, a gas is jetted onto the surface of the wafer on which the cleaning solution remains to scatter or flow the cleaning solution in the step of drying the cleaning solution. It is achieved by developing a method which is characterized by removing the washing liquid remaining on the wafer by.

[0013]

[Operation] Since the developing device of the present invention has the gas nozzle having the gas ejection port and the second moving means for moving the gas nozzle so as to face the wafer mounting portion, the present invention As in the developing method of (3), by ejecting a gas onto the wafer surface where the cleaning liquid replacing the developing liquid remains,
Unlike the case where the centrifugal force by the conventional rotation is used, it is possible to make the removing force received by the cleaning liquid scattered or flowing between the central portion and the peripheral portion more uniform. Further, since the gas nozzle has a second rotating means for rotating the gas nozzle around an axis perpendicular to the facing surface in a state where the wafer mounting portion and the jet outlet of the gas nozzle are opposed to each other, the gas nozzle can be used when ejecting the gas. By rotating, even if the jetting force of the gas at the jetting outlet of each gas varies, the removing force based on the jetting force of the gas received by the cleaning liquid on the wafer can be made more uniform.

As a result, the cleaning liquid or the like can be removed so as not to remain on the object to be developed.

[0015]

【Example】

(1) First Embodiment FIG. 1A is a configuration diagram of a developing device according to a first embodiment of the present invention, which performs from the development of an exposed resist film formed on a wafer to the removal of a cleaning liquid. 1 (b) is a side view showing the details of the wafer mounting portion, FIG. 2 (c) is a side view showing the details of the developing solution nozzle and the cleaning solution nozzle, and FIG. 2 (d).
FIG. 3 is a side view showing details of a gas nozzle.

In FIGS. 1 (a) and 1 (b), 21 is a cup for receiving a developing solution which has been developed and discharging the developing solution through an outlet 22, and 23 is a disk-shaped wafer mounting portion. An intake port (not shown) for vacuum chucking the wafer is formed on the mounting surface. Reference numeral 24 denotes a spin motor that rotates the wafer mounting portion 21, and 25 denotes a rotation shaft of the wafer mounting portion 23 that is common to the rotation shaft of the spin motor 24. The rotation shaft 25 rotates around the center of the rotation shaft 25. You can also move yourself up and down. The spin motor 24 and the rotating shaft 25 form a first rotating unit. 26 is a cylinder.

In FIGS. 1A and 2C, 27 is an arm to which the developing solution nozzle 36 and the cleaning solution nozzle 38 are attached, and 28 is the arm 27 which rotates the arm 27.
3 is a rotating shaft for moving the developing solution nozzle 36 and the cleaning solution nozzle 38 above 3. In addition, the arm 27 and the rotating shaft 28
A motor or the like (not shown) for rotating the rotating shaft 28 constitutes the first moving means. 36 is an inlet 2 for introducing a developing solution
Reference numeral 9 denotes a developing solution nozzle having a discharge port 37 for discharging the introduced developing solution, and 38 denotes an introducing port 30 for introducing a cleaning solution for cleaning the developing solution on the wafer after development and an ejection port for discharging the cleaning solution on the wafer. 39 is a cleaning liquid nozzle.

In FIGS. 1 (a) and 2 (d), 31 is an arm to which a gas nozzle 33 for ejecting gas is attached, and 32 is the arm 31 rotated to move the gas nozzle 33 above the wafer mounting portion 23. The rotation axis that moves the arm 3
1, the rotating shaft 32 and a motor (not shown) for rotating the rotating shaft 32 and the like constitute second moving means. Reference numeral 33 denotes a gas nozzle having a plurality of ejection ports 40 for ejecting gas, which are formed, for example, in a radial shape on the surface of the disk-shaped substrate facing the wafer mounting portion 23. Reference numeral 34 is a spin motor for rotating the gas nozzle 33, 45 is a rotation shaft of the gas nozzle 33 which is connected to the spin motor 34 and is formed integrally with the gas nozzle 33. The spin motor 34 and the rotation shaft 45 form a second rotation means. Constitute. Reference numeral 35 is a gas introduction port to the gas nozzle 33 which penetrates the inside of the spin motor 34 and the rotary shaft 45 and communicates with the gas nozzle 33.

As described above, according to the developing device of the first embodiment of the present invention, the gas nozzle 33 having the gas ejection port 40 and the arm for moving the gas nozzle 33 so as to face the wafer mounting portion 23. Since the cleaning liquid 31 has the rotating shaft 32 and the rotating shaft 32, by ejecting gas onto the surface of the wafer on which the cleaning liquid remains after the developing liquid is replaced with the cleaning liquid, unlike the case where the centrifugal force by the conventional rotation is used, It is possible to make the removal force of the cleaning liquid that scatters or flows the cleaning liquid between the peripheral portion and the peripheral portion more uniform. Further, since the gas nozzle 33 facing the wafer mounting portion 23 is provided with the spin motor 34 for rotating the gas nozzle 33 around an axis perpendicular to the facing surface, the gas jetting power of the individual gas jetting ports 40 varies. Even if there is, the removal force based on the jetting force of the gas received by the cleaning liquid on the wafer can be made more uniform.

As a result, the wafer can be dried so that the cleaning liquid and the like do not remain on the wafer. In the first embodiment, as the gas nozzle 33, a disk-shaped substrate in which a plurality of ejection openings 40 are radially formed on the surface facing the wafer mounting portion 23 is used. Alternatively, a single tubular base body formed side by side may be used.

(2) Second Embodiment Next, a method of developing a resist film (photosensitive film) on a wafer by using the above developing device will be described. Figure 3
FIGS. 4A, 4B, 4C, and 4D are side views for explaining the developing method of the second embodiment of the present invention.

First, the rotary shaft 23 is moved upward, and the wafer 41 on which the exposed resist film 42 is formed is moved to the resist film 1.
After being placed on the wafer placing portion 23 with the second side facing up, the rotary shaft 2 is placed so that the wafer placing portion 23 fits inside the cup 21.
5 is moved downward (FIG. 3 (a)).

Next, the developing solution nozzle 36 is moved onto the wafer mounting portion 23, and the developing solution 43 is fed from the ejection port 37 to the wafer 4.
1 is discharged onto the surface of the resist film 1 and allowed to flow naturally to cover the resist film 42. Next, while maintaining this state for a predetermined time, the resist film 4
2 is developed, the spin motor 24 is rotated to rotate the wafer 4
The developing solution 43 on 1 is made to flow / scatter (FIG. 3 (b)).

Next, while rotating the spin motor 24,
The cleaning solution 44 is continuously ejected from the ejection port 39 of the cleaning solution nozzle 38 to replace the developing solution with the cleaning solution 44, and cleaning is performed. As a result, the development is stopped (FIG. 4 (c)).

Next, the jetting of the cleaning liquid 44 is stopped and the rotation of the spin motor 24 is stopped.
8 to rotate the developing solution nozzle 36 /
The cleaning liquid nozzle 38 is removed. Subsequently, the rotating shaft 32 is rotated to move the gas nozzle 33 above the wafer 41, and then the spin motor 35 is rotated to rotate the gas nozzle 33, and high-pressure nitrogen gas is introduced from the gas inlet 34. And spouts from the spout 40 (FIG. 4 (d)). This causes the cleaning liquid 44 remaining on the wafer 41 to flow and
The development / drying is completed when the surface of the wafer 41 is removed by scattering and drying.

As described above, according to the developing method of the second embodiment of the present invention, the nitrogen gas is jetted to the surface of the wafer 41 where the cleaning liquid 44 replacing the developing liquid 43 remains, so that the conventional rotation is performed. Unlike the case of using the centrifugal force, the removal force received by the cleaning liquid 44 that scatters or flows the cleaning liquid 44 between the central portion and the peripheral portion can be made more uniform. In addition, the spin motor 35 is used to move the wafer mounting portion 23.
Since the gas nozzle 33 facing each other is rotated around an axis perpendicular to the facing surface, even if the gas jetting power of the individual gas jetting ports 40 varies, the cleaning liquid 44 on the wafer 41 receives the gas. It is possible to make the removing force based on the jetting force of the gas more uniform.

As a result, the cleaning liquid 44 and the like can be dried on the wafer 41 so as not to remain.

[0028]

As described above, according to the developing device of the present invention, the gas nozzle having the gas ejection holes and the second moving means for moving the gas nozzle so as to face the wafer mounting portion are provided. Therefore, as in the developing method of the present invention, by ejecting a gas onto the wafer surface where the cleaning liquid of the developing liquid remains, the cleaning liquid removing force that scatters or flows the cleaning liquid between the central portion and the peripheral portion. Can be made more uniform.

Further, since the gas nozzle facing the wafer mounting portion is rotated about the axis perpendicular to the facing surface by the second rotating means, the gas nozzle can be rotated when the gas is ejected. Further, it is possible to make the variations in the jetting force of the gas uniform and further uniformize the removing force based on the jetting force of the gas received by the cleaning liquid on the wafer.

With this, the cleaning liquid can be dried so that the cleaning liquid does not remain on the developed material.

[Brief description of drawings]

FIG. 1 is a configuration diagram (1) of a developing device according to a first embodiment of the present invention.

FIG. 2 is a configuration diagram (No. 2) of the developing device according to the first embodiment of the present invention.

FIG. 3 is a side view (No. 1) for explaining the developing method according to the second embodiment of the present invention.

FIG. 4 is a side view (No. 2) for explaining the developing method according to the second embodiment of the present invention.

FIG. 5 is a block diagram of a conventional developing device.

FIG. 6 is a side view (No. 1) for explaining a developing method of a conventional example.

FIG. 7 is a side view (No. 2) explaining a developing method of a conventional example.

[Explanation of symbols]

 21 cups, 22 discharge ports, 23 wafer mounting parts, 24 spin motors (first rotating means), 25 rotating shafts (first rotating means), 26 cylinders, 27 arms (first moving means), 28 times Moving shaft (first moving means), 29, 30, 35 inlet, 31 Arm (second moving means), 32 Rotating shaft (second moving means), 33 Gas nozzle, 34 Spin motor (second) Rotating means), 36 developing solution nozzle, 37, 39 discharge port, 38 cleaning solution nozzle, 40 ejection port, 41 wafer, 42 resist film (photosensitive film), 43 developing solution, 44 cleaning solution, 45 rotating shaft (second rotation) means).

Claims (3)

[Claims] 1. A wafer mounting portion, a developing solution nozzle having a developing solution discharge port, a cleaning solution nozzle having a cleaning solution discharge port, and at least one of the developing solution nozzle and the cleaning solution nozzle. First moving means for moving at least one of the developing solution nozzle and the cleaning solution nozzle so as to face the wafer mounting section, and an axis perpendicular to an opposing surface of the wafer mounting section. A developing device comprising at least a first rotating means for rotating the wafer mounting part, wherein a gas nozzle having a gas inlet and a gas outlet, and the gas nozzle ejection port and the wafer mounting part face each other. And a second moving unit that moves the gas nozzle. 2. The developing device rotates the gas nozzle around an axis perpendicular to the facing surface in a state where the wafer mounting portion and the jet outlet of the gas nozzle face each other.
The developing device according to claim 1, further comprising: 3. A step of developing by coating a photosensitive film on the exposed wafer with a developing solution, and stopping the development by rotating the wafer and discharging a cleaning solution onto the surface of the wafer. A developing method comprising: a step of scattering and flowing the developing solution, and a step of replacing the cleaning solution with the cleaning solution to clean the developing solution remaining on the wafer surface; and a step of removing the cleaning solution remaining on the wafer, In the step of drying the cleaning liquid, the cleaning liquid remaining on the wafer is removed by ejecting a gas onto the surface of the wafer on which the cleaning liquid remains to scatter or flow the cleaning liquid.