JP2593465B2 - Liquid processing equipment for semiconductor wafers - Google Patents

Liquid processing equipment for semiconductor wafers

Info

Publication number
JP2593465B2
JP2593465B2 JP62018524A JP1852487A JP2593465B2 JP 2593465 B2 JP2593465 B2 JP 2593465B2 JP 62018524 A JP62018524 A JP 62018524A JP 1852487 A JP1852487 A JP 1852487A JP 2593465 B2 JP2593465 B2 JP 2593465B2
Authority
JP
Japan
Prior art keywords
semiconductor wafer
cleaning liquid
rotary table
liquid
outer container
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP62018524A
Other languages
Japanese (ja)
Other versions
JPS63187630A (en
Inventor
正樹 高原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62018524A priority Critical patent/JP2593465B2/en
Publication of JPS63187630A publication Critical patent/JPS63187630A/en
Application granted granted Critical
Publication of JP2593465B2 publication Critical patent/JP2593465B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Coating Apparatus (AREA)

Description

【発明の詳細な説明】 〔発明の目的〕 (産業上の利用分野) この発明は半導体ウエーハの液処理装置にかかり、特
に半導体ウエーハの写真蝕刻においてレジスト塗布,現
像に用いられる液処理装置に適用される。
DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial application field) The present invention relates to a liquid processing apparatus for semiconductor wafers, and more particularly, to a liquid processing apparatus used for resist coating and development in photolithography of semiconductor wafers. Is done.

(従来の技術) 半導体ウエーハにレジストを塗布し、あるいは現像等
を施すのに用いられる液処理装置を第5図に断面図で示
す。図中、101は半導体ウエーハ載置回転台で、上面に
半導体ウエーハ102を載せ、かつ、減圧で吸引固着し、
下方に伸びる軸101aは、回転駆動機構101b、例えばモー
タと回転速度調整・切換部に接続されている。次に103
は外囲容器で、上記半導体ウエーハ載置回転台101を包
囲してカップ型になり、その下部に排液口103aが設けら
れ、かつ、上部にふた体103bが設けられている。また、
半導体ウエーハ載置回転台101の上方には、処理液の注
液口104が、上記回転台上に載置される半導体ウエーハ
の中央部を指向して配置されている。
(Prior Art) FIG. 5 is a cross-sectional view of a liquid processing apparatus used for applying a resist to a semiconductor wafer or performing development or the like. In the figure, 101 is a semiconductor wafer mounting rotary table, on which a semiconductor wafer 102 is mounted on the upper surface, and is suction-fixed under reduced pressure.
The shaft 101a extending downward is connected to a rotation drive mechanism 101b, for example, a motor and a rotation speed adjusting / switching unit. Then 103
Is an outer container, which surrounds the semiconductor wafer mounting rotary table 101 and has a cup shape. A liquid drain port 103a is provided at a lower part thereof, and a lid body 103b is provided at an upper part thereof. Also,
Above the semiconductor wafer mounting rotary table 101, a processing liquid injection port 104 is disposed so as to face the center of the semiconductor wafer mounted on the rotary table.

上記排液口103aは処理廃液溜105に接続されるととも
に、外部の排気ダスト(図示省略)に接続されて外囲容
器103内に下向きの空気流を形成し、半導体ウエーハ102
上に注加され、半導体ウエーハの回転によって生じた処
理液のミストを上記空気流に乗せて収集するようになっ
ている。
The drain port 103a is connected to the processing waste liquid reservoir 105 and is connected to an external exhaust dust (not shown) to form a downward air flow in the outer container 103, and the semiconductor wafer 102
The mist of the processing liquid generated by the rotation of the semiconductor wafer, which is poured above, is put on the air flow and collected.

(発明が解決しようとする問題点) 叙上の従来技術では、外囲容器の大きさ、形状等と、
これに配設される排液口による排気能力(排気口数・位
置・排気速度)により、半導体ウエーハ回転時に発生す
るレジストや現像液のような処理液の「はね返り」を生
ずる。この「はね返り」により処理液が半導体ウエーハ
の上主面に付着し、レジスト塗着膜や現像の状態に悪影
響をおよぼすという重大な欠点があった。
(Problems to be Solved by the Invention) In the above described prior art, the size and shape of the surrounding container
Due to the exhaust capability (the number, position, and exhaust speed of the exhaust ports) of the drain ports provided therein, a "bounce" of a processing liquid such as a resist or a developing liquid generated when the semiconductor wafer rotates is generated. Due to this "bounce", the processing liquid adheres to the upper main surface of the semiconductor wafer, and has a serious disadvantage that it adversely affects the resist coating film and the state of development.

この発明は、上記従来の技術における問題点に鑑み、
半導体ウエーハに対する液処理装置の改良構造を提供す
るものである。
The present invention has been made in view of the above-mentioned problems in the related art,
An object of the present invention is to provide an improved structure of a liquid processing apparatus for a semiconductor wafer.

〔発明の構成〕[Configuration of the invention]

(問題点を解決するための手段) この発明にかかる半導体ウエーハの液処理装置は、半
導体ウエーハを載置し回転駆動機構により回転される半
導体ウエーハ載置回転台、上記半導体ウエーハ載置回転
台を包囲してカップ状になり下部に排液口を有する外囲
容器、上記半導体ウエーハ載置回転台の上方にこれに指
向して配置された処理液注加手段、および上記外囲容器
の内側面に沿って洗浄液を流下させるために外囲容器の
上縁に設けられた洗浄液流下手段を備え、かつ前記洗浄
液流下手段は、外囲容器内側面よりも内方に設けられた
ループ状の洗浄液プールと、この洗浄液プールから上記
内側面に傾斜して対向し下端の一部が上記内側面に接す
る透孔を具備したことを特徴とする。
(Means for Solving the Problems) A liquid processing apparatus for a semiconductor wafer according to the present invention includes a semiconductor wafer mounting rotary table on which a semiconductor wafer is mounted and rotated by a rotation drive mechanism, and a semiconductor wafer mounting rotary table. An outer container that surrounds the container and has a drainage port at a lower portion, a processing liquid pouring means disposed above and directed toward the semiconductor wafer mounting rotary table, and an inner surface of the outer container A cleaning liquid flowing means provided at an upper edge of the outer container to cause the cleaning liquid to flow down, and the cleaning liquid flowing means is a loop-shaped cleaning liquid pool provided inward from the inner side surface of the outer container. And a through hole in which a part of a lower end is inclined from the cleaning liquid pool to the inner surface and a part of the lower end is in contact with the inner surface.

(作 用) この発明は処理液が外囲容器への「はね返り」により
半導体ウエーハに再付着することを防止するために、外
囲容器の内側壁に液を流下させるものである。
(Operation) In the present invention, in order to prevent the processing liquid from re-adhering to the semiconductor wafer due to "bounce" on the outer container, the liquid flows down to the inner wall of the outer container.

(実施例) 以下、この発明の一実施例につき第1図ないし第3図
を参照して説明する。なお、説明において従来と変わら
ない部分については、図面に従来と同じ符号を付けて示
し説明を省略する。
(Embodiment) An embodiment of the present invention will be described below with reference to FIGS. In the description, portions that are the same as those in the related art are denoted by the same reference numerals in the drawings, and description thereof is omitted.

第1図に示す一実施例の装置において、外囲容器11は
その上縁に洗浄液流下手段12が設けられている。この洗
浄液流下手段12は外囲容器11の上縁に洗浄液プール12a
がループになり、その下部に洗浄液を外囲容器11の内側
壁に沿って流下させるように透孔12aがその下端12cを内
側壁に接して設けられている。そして、洗浄液、例えば
純水、市水、溶剤などを、用いられる処理液の種類によ
って選択してきめる。
In the apparatus of the embodiment shown in FIG. 1, an outer container 11 is provided with a washing liquid flowing down means 12 at an upper edge thereof. The cleaning liquid flow-down means 12 is provided at the upper edge of the surrounding container 11 with a cleaning liquid pool 12a.
Is formed as a loop, and a through hole 12a is provided below the lower wall 12a in contact with the inner wall so that the cleaning liquid flows down along the inner wall of the outer container 11. Then, a cleaning liquid, for example, pure water, city water, a solvent, or the like is selected depending on the type of the processing liquid to be used.

以下に一例のポジ型レジスタの実施例につき述べる。 An embodiment of an example of a positive register will be described below.

(i)レジスト塗布 塗布前処理ベーキングおよびHMDS
(ヘキサメチレン・ジシラザン)処理を施した半導体ウ
エーハにレジスト塗布を行なうにあたって、上記半導体
ウエーハ載置回転台101の上面にこの半導体ウエーハ102
を減圧吸引保持し、第2図に示すように、まず、4000〜
5000RPMでクリーン・スピンを2〜3秒施す。このクリ
ーン・スピンによって塗布前の諸工程で付着したごみが
除かれる。その後、半導体ウエーハが静止した状態でレ
ジスト滴下が開始される。このレジスト滴下と少くとも
同時に内側壁への洗浄液の流下を開始する。この場合の
洗浄液はポジ型レジストを溶かす有機溶媒、例えばE.C.
A(エチル・セロソルブ・アセテート)、アセトン等で
ある。そして、この洗浄液流下は、低速回転中の一例の
5秒間と、これに続く高速回転中の一例の30秒間が完了
するまで続けられる。
(I) Resist coating Pretreatment baking and HMDS
When a resist is applied to a (hexamethylene disilazane) -treated semiconductor wafer, the semiconductor wafer 102 is placed on the upper surface of the rotary table 101 for mounting the semiconductor wafer.
Is held under reduced pressure, and as shown in FIG.
Apply a clean spin at 5000 RPM for 2-3 seconds. The clean spin removes dust attached in various steps before coating. Thereafter, while the semiconductor wafer is stationary, the dropping of the resist is started. At least at the same time as the dropping of the resist, the flow of the cleaning liquid to the inner side wall is started. The cleaning liquid in this case is an organic solvent that dissolves the positive resist, such as EC
A (ethyl cellosolve acetate), acetone and the like. The flow of the cleaning liquid is continued until the completion of 5 seconds of an example during the low-speed rotation and 30 seconds of the example during the subsequent high-speed rotation.

(ii)現像 上記によりレジスト膜が塗布された半導体
ウエーハにプリベーキング,露光を施したのち、第3図
に示すように、一例として純水の洗浄液を外囲容器11の
内側壁に流下させながら現像液のコリンを20秒間、つい
でリンス液の純水を15秒間処理液注液口104から注ぎ現
像を施す。このリンスが終了したのち、乾燥のための回
転が一例として10秒間行なわれるが、洗浄液の流下はリ
ンス終了後、約3秒間で停止してよい。
(Ii) Development After the semiconductor wafer coated with the resist film as described above is subjected to pre-baking and exposure, as shown in FIG. Choline of a developing solution is poured for 20 seconds, and then pure water of a rinsing solution is poured for 15 seconds from a processing solution inlet 104 to perform development. After completion of the rinsing, rotation for drying is performed for 10 seconds as an example, but the flow of the cleaning liquid may be stopped about 3 seconds after the rinsing is completed.

なお、ネガ型レジストに対しては、レジスト塗布の場
合の洗浄液にキシレン,n−ペプタン等が、また、現像の
場合には酢酸ブチル等が用いられる。
Note that, for a negative resist, xylene, n-peptane, or the like is used as a cleaning liquid for resist coating, and butyl acetate or the like is used for development.

〔発明の効果〕〔The invention's effect〕

この発明によれば、半導体ウエーハへのレジストや現
像液等処理液の「はね返り」により発生していた不良率
約2.6%が完全に解消し、生産性と品質の向上に顕著に
寄与する。
According to the present invention, the defect rate of about 2.6% caused by the "bounce" of a processing solution such as a resist or a developing solution onto a semiconductor wafer is completely eliminated, and this significantly contributes to improvement in productivity and quality.

また、この発明は従来の装置に大幅な改修を要せず実
現できる利点もある。
Further, the present invention has an advantage that it can be realized without requiring significant modification of the conventional device.

さらにこの発明によれば、外囲容器の内側面に沿って
流下させる洗浄液をこの内側面の周囲に沿って均一にで
きる利点がある。すなわち、洗浄液プールはループ状に
設けられてはいても、洗浄液が内側面の周囲に沿って常
に均一の圧力で供給できるものでないから実験的に透孔
の大きさ(径)を加減することによって容易に達成して
いる。また、この透孔の構造は洗浄液の噴出圧力が大き
くなっても、洗浄液の流れが容器内側面から離れること
がなく安定な操作を可能にする顕著な利点がある。な
お、洗浄液の流下をスリットによって行う公知の手法も
あるが、これは流下量の調整がこのスリットの間隙の調
整にかかっており、これは工作上極めて困難である。従
って叙上の如く、この発明の構成は優れたものである。
Further, according to the present invention, there is an advantage that the cleaning liquid flowing down along the inner surface of the outer container can be made uniform along the periphery of the inner surface. That is, even though the cleaning liquid pool is provided in a loop, the cleaning liquid cannot always be supplied at a uniform pressure along the periphery of the inner surface, so that the size (diameter) of the through-hole is experimentally adjusted. Achieved easily. Further, the structure of the through-hole has a remarkable advantage that even if the ejection pressure of the cleaning liquid increases, the flow of the cleaning liquid does not separate from the inner side surface of the container, thereby enabling a stable operation. In addition, there is a known method in which the flow of the cleaning liquid is performed by a slit. However, in this method, the flow amount is adjusted by adjusting the gap between the slits, which is extremely difficult in terms of work. Therefore, as described above, the configuration of the present invention is excellent.

【図面の簡単な説明】[Brief description of the drawings]

第1図ないし第3図はこの発明の実施例にかかり、第1
図aは装置の垂直方向の断面図、第1図bは第1図aの
AA線に沿う断面図、第2図はレジスト塗布工程のスケジ
ュールを示す線図、第3図は現像工程のスケジュールを
示す線図、第4図aは従来の装置の垂直方向の断面図、
第4図bは第4図aのAA線に沿う断面図である。 11,103……外囲容器 12……洗浄液流下手段 12a……洗浄液プール 12……透孔 12c……透孔の下端 101……半導体ウエーハ載置回転台 101b……回転駆動機構 102……半導体ウエーハ 103a……排液口 104……注液口
1 to 3 relate to an embodiment of the present invention, and FIG.
FIG. 1a is a vertical sectional view of the device, FIG.
FIG. 2 is a diagram showing a schedule of a resist coating process, FIG. 3 is a diagram showing a schedule of a developing process, FIG. 4a is a vertical cross-sectional view of a conventional apparatus,
FIG. 4B is a cross-sectional view taken along the line AA of FIG. 4A. 11, 103 surrounding container 12 cleaning solution flow-down means 12a cleaning solution pool 12 through-hole 12c bottom end of through-hole 101 semiconductor wafer mounting rotary table 101b rotary drive mechanism 102 semiconductor wafer 103a …… Drain port 104 …… Injection port

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】半導体ウエーハを載置し回転駆動機構によ
り回転される半導体ウエーハ載置回転台、上記半導体ウ
エーハ載置回転台を包囲しカップ型で下部に排液口を有
する外囲容器、上記半導体ウエーハ載置回転台の上方に
これに指向して配置された処理液注加手段、および上記
外囲容器の内側面に沿って洗浄液を流下させるための洗
浄液流下手段を具備し、上記洗浄液流下手段が、外囲容
器の内側面上縁より内方にループ状に設けられた洗浄液
プールと、該洗浄液プールの下部に上記内側面に傾斜し
て対向するとともに下端の一部が内側面に接して設けら
れた透孔からなることを特徴とする半導体ウエーハの液
処理装置。
A semiconductor wafer mounting rotary table on which a semiconductor wafer is mounted and rotated by a rotary driving mechanism; an enclosing container surrounding the semiconductor wafer mounting rotary table and having a cup-shaped lower part with a drainage port; A processing liquid pouring means arranged above and directed to the semiconductor wafer mounting rotary table; and a cleaning liquid flowing means for flowing a cleaning liquid along the inner surface of the outer container. The means is provided with a cleaning liquid pool provided in a loop inward from the upper edge of the inner surface of the outer container, and a lower end of the cleaning liquid pool is inclinedly opposed to the inner surface and a part of the lower end is in contact with the inner surface. A liquid processing apparatus for a semiconductor wafer, comprising:
JP62018524A 1987-01-30 1987-01-30 Liquid processing equipment for semiconductor wafers Expired - Fee Related JP2593465B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62018524A JP2593465B2 (en) 1987-01-30 1987-01-30 Liquid processing equipment for semiconductor wafers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62018524A JP2593465B2 (en) 1987-01-30 1987-01-30 Liquid processing equipment for semiconductor wafers

Publications (2)

Publication Number Publication Date
JPS63187630A JPS63187630A (en) 1988-08-03
JP2593465B2 true JP2593465B2 (en) 1997-03-26

Family

ID=11974017

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62018524A Expired - Fee Related JP2593465B2 (en) 1987-01-30 1987-01-30 Liquid processing equipment for semiconductor wafers

Country Status (1)

Country Link
JP (1) JP2593465B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS645437U (en) * 1987-06-26 1989-01-12

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5337582U (en) * 1976-09-06 1978-04-01
JPS55181340U (en) * 1979-06-12 1980-12-26
JPS5745237A (en) * 1980-09-01 1982-03-15 Fujitsu Ltd Rotary processing device
JPS6095979U (en) * 1983-12-05 1985-06-29 東京応化工業株式会社 Coating device

Also Published As

Publication number Publication date
JPS63187630A (en) 1988-08-03

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