JPH0362476B2 - - Google Patents

Info

Publication number
JPH0362476B2
JPH0362476B2 JP56132769A JP13276981A JPH0362476B2 JP H0362476 B2 JPH0362476 B2 JP H0362476B2 JP 56132769 A JP56132769 A JP 56132769A JP 13276981 A JP13276981 A JP 13276981A JP H0362476 B2 JPH0362476 B2 JP H0362476B2
Authority
JP
Japan
Prior art keywords
substrate
nozzle
chemical solution
workpiece
rotated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56132769A
Other languages
Japanese (ja)
Other versions
JPS5836679A (en
Inventor
Tomoaki Tsuboka
Yoshinori Niwada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13276981A priority Critical patent/JPS5836679A/en
Publication of JPS5836679A publication Critical patent/JPS5836679A/en
Publication of JPH0362476B2 publication Critical patent/JPH0362476B2/ja
Granted legal-status Critical Current

Links

Description

【発明の詳細な説明】 本発明はウエツト処理装置、特にホトレジスト
の現像装置に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a wet processing apparatus, and more particularly to a photoresist developing apparatus.

従来、基板表面のウエツト処理方法として、第
1図に示すように基板1を入れたカセツト2を薬
液3が満たされた処理槽4に浸すデイツプ方式
と、第2図、第3図および第4図に示すように基
板1を真空チヤツク5に吸着保持し回転させなが
ら、第2図のように噴射弁6により霧状になつた
薬液3を吹き付けるスプレー方式と、第3図のよ
うに単孔ノズル7を基板中央に配し基板1上に薬
液3を滴下する単孔ノズル方式と、第4図のよう
に一端8aが閉じられた中空パイプのノズル8を
基板1とほぼ平行に配設し、底面に設けた多数の
小穴より薬液3を滴下するシヤワー方式とが知ら
れている。
Conventionally, as a wet processing method for a substrate surface, there is a dip method in which a cassette 2 containing a substrate 1 is immersed in a processing tank 4 filled with a chemical solution 3 as shown in FIG. 1, and a dip method as shown in FIGS. As shown in the figure, while the substrate 1 is held by suction on the vacuum chuck 5 and rotated, the chemical solution 3 in the form of mist is sprayed by the injection valve 6 as shown in Fig. 2. There is a single-hole nozzle method in which the nozzle 7 is placed in the center of the substrate and drops the chemical solution 3 onto the substrate 1, and a nozzle 8, which is a hollow pipe with one end 8a closed as shown in FIG. 4, is placed almost parallel to the substrate 1. A shower method is known in which a chemical solution 3 is dripped from a number of small holes provided on the bottom surface.

しかしながら、これらの方式はいずれも一長一
短を有する。すなわち、第1図に示すデイツプ方
式は基板1の表面に機械的強度の弱い物質の膜が
形成されている場合のウエツト処理、たとえばポ
ジ型ホトレジストの現像の場合、ホトレジストの
表面に機械的ダメージを与えずに高品質に現像で
きる利点を持つ。その反面、生産の連続化、自動
化が困難であるなどの欠点を有する。
However, all of these methods have advantages and disadvantages. That is, the dip method shown in FIG. 1 is a wet process when a film of a substance with low mechanical strength is formed on the surface of the substrate 1, for example, when developing a positive type photoresist, it is difficult to avoid mechanical damage to the surface of the photoresist. It has the advantage of being able to develop with high quality without adding any additional material. On the other hand, it has drawbacks such as difficulty in continuous production and automation.

これに対し、第2図に示すスプレー方式、第4
図に示すシヤワー方式は生産の連続化を容易に実
現できるが、たとえばポジ型ホトレジストのよう
に機械的強度の弱い膜の現像の場合、ホトレジス
ト表面を機械的に破壊してしまい、品質を悪くす
るという欠点を有している。また第3図に示す単
孔ノズル方式は前記スプレー方式およびシヤワー
方式と同様の利点を有するが、基板表面の中央部
分のみに常に新しい薬液が供給されるため、基板
中央部と周辺部でのウエツト処理状態が異なる欠
点がある。
On the other hand, the spray method shown in Fig. 2,
The shower method shown in the figure can easily realize continuous production, but when developing a film with weak mechanical strength, such as positive photoresist, it mechanically destroys the photoresist surface and deteriorates the quality. It has the following drawbacks. The single-hole nozzle method shown in Fig. 3 has the same advantages as the spray method and shower method, but since new chemical solution is always supplied only to the center of the substrate surface, there is no need to worry about the wetness at the center and periphery of the substrate. The disadvantage is that the processing conditions are different.

本発明の目的は従来のウエツト処理方法の欠点
を解消したウエツト処理方法を提供することにあ
る。
SUMMARY OF THE INVENTION An object of the present invention is to provide a wet treatment method that eliminates the drawbacks of conventional wet treatment methods.

以下、本発明の一実施例を第5図により説明す
る。同図に示すように、基板1は真空チヤツク5
により吸着保持され、また基板1の上方に基板1
と平行に中空パイプのノズル9が配置されている
点は従来と同じである。
An embodiment of the present invention will be described below with reference to FIG. As shown in the figure, the substrate 1 is connected to a vacuum chuck 5.
The substrate 1 is held by suction and held above the substrate 1.
The point that the hollow pipe nozzle 9 is arranged parallel to is the same as in the conventional case.

本実施例においては、前記ノズル9は両端が閉
じられており、真空チヤツク5の回転軸と同軸上
の上方延長上に設けられた中空パイプの回転軸1
0に取付けられている。前記回転軸10は固定ブ
ロツク11に回転自在に支承されており、図示し
ない駆動手段で回転させられる。また固定ブロツ
ク11には薬液供給パイプ12が連続されてお
り、この薬液供給パイプ12は回転軸10の中空
部と連通するように回転軸10および固定ブロツ
ク11にそれぞれ穴(図示せず)が設けられてい
る。またノズル9の下面には多数の穴9aが基板
1とある角度をもつて、または垂直に設けられて
いる。
In this embodiment, the nozzle 9 is closed at both ends, and the rotation axis 1 of the hollow pipe is provided on the upper extension coaxial with the rotation axis of the vacuum chuck 5.
It is attached to 0. The rotating shaft 10 is rotatably supported by a fixed block 11, and is rotated by a drive means (not shown). Further, a chemical liquid supply pipe 12 is connected to the fixed block 11, and a hole (not shown) is provided in each of the rotating shaft 10 and the fixed block 11 so that the chemical liquid supply pipe 12 communicates with the hollow part of the rotating shaft 10. It is being Further, a large number of holes 9a are provided on the lower surface of the nozzle 9 at a certain angle to the substrate 1 or perpendicularly thereto.

次にかかる構成よりなる装置を用いて基板1の
表面に薬液を供給する方法について説明する。基
板1を真空チヤツク5に吸着保持させ、この基板
1の上方にノズル9を基板1と平行に数mm程度近
接して配置する。そして、真空チヤツク5、すな
わち基板1は回転させなく、回転軸10、すなわ
ちノズル9を10〜60r.p.m程度で回転させ、薬液
供給パイプ12より固定ブロツク11、回転軸1
0を通してノズル9に薬液3を供給する。これに
より、ノズル9の穴9aを通して基板1全面にわ
たり均一に薬液3が供給される。
Next, a method for supplying a chemical solution to the surface of the substrate 1 using the apparatus having the above configuration will be described. The substrate 1 is held by suction on the vacuum chuck 5, and a nozzle 9 is placed above the substrate 1 in parallel with the substrate 1 and close to it by several millimeters. Then, the vacuum chuck 5, that is, the substrate 1, is not rotated, but the rotating shaft 10, that is, the nozzle 9 is rotated at about 10 to 60 rpm, and the fixed block 11 and the rotating shaft 1 are rotated through the chemical supply pipe 12.
The chemical solution 3 is supplied to the nozzle 9 through the nozzle 9. Thereby, the chemical solution 3 is uniformly supplied over the entire surface of the substrate 1 through the hole 9a of the nozzle 9.

さて、第3図および第4図に示す従来のスプレ
ー方式、シヤワー方式の場合は、基板1の回転に
より滴下する薬液3と基板1の被処理膜表面との
間に薬液の流れによるせん断力が働き、機械的に
被処理膜表面を破壊してしまう。しかるに、本発
明の方法は基板1上の被処理膜表面と滴下する薬
液3との間には薬液の流れによるせん断力が働か
ないので、基板1上に形成された機械的強度の弱
い被処理膜が破壊されることはない。
Now, in the case of the conventional spray method and shower method shown in FIG. 3 and FIG. This mechanically destroys the surface of the film to be treated. However, in the method of the present invention, no shearing force due to the flow of the chemical solution acts between the surface of the film to be treated on the substrate 1 and the dropping chemical solution 3, so that the process film formed on the substrate 1 has a weak mechanical strength. The membrane is not destroyed.

なお、上記実施例においては基板1を回転させ
ない場合について説明したが、真空チヤツク5を
回転させ、遠心力により古くなつた薬液3を基板
1外へ排出させて基板1上に常に新しい薬液3を
供給するようにしても、本発明の方法においては
被処理膜の破壊を防止することができる。すなわ
ち、本発明においてはノズル9を回転させている
ので、ノズル9の回転数と基板1の回転数との相
対的な回転数より基板1の回転数を小さく設定す
ることができ、基板1上の被処理膜の薬液3の供
給による機械的破壊を防止させることができる。
また上記実施例においてはホトレジストの現像の
場合について説明したが、他のウエツト処理、た
とえばエツチング、染色、水洗などにも同様に適
用できる。
Although the above embodiment describes the case where the substrate 1 is not rotated, the vacuum chuck 5 is rotated and the old chemical solution 3 is discharged to the outside of the substrate 1 by centrifugal force, so that new chemical solution 3 is constantly placed on the substrate 1. Even if it is supplied, the method of the present invention can prevent destruction of the film to be treated. That is, in the present invention, since the nozzle 9 is rotated, the rotation speed of the substrate 1 can be set to be smaller than the relative rotation speed of the nozzle 9 and the rotation speed of the substrate 1. Mechanical destruction of the film to be treated due to the supply of the chemical solution 3 can be prevented.
Further, although the above embodiments have been described in the case of photoresist development, the present invention can be similarly applied to other wet treatments such as etching, dyeing, washing, etc.

以上の説明から明らかな如く、本発明によれ
ば、ノズルを回転させながら液を供給するので、
基板を固定状態または小さな回転数で回転させる
ことができ、液の基板上の被処理膜表面との間に
働く機械的力が著しく減少し、高品質なウエツト
処理ができる。
As is clear from the above description, according to the present invention, since the liquid is supplied while rotating the nozzle,
The substrate can be fixed or rotated at a small rotational speed, and the mechanical force acting between the liquid and the surface of the film to be processed on the substrate is significantly reduced, making it possible to perform high-quality wet processing.

【図面の簡単な説明】[Brief explanation of drawings]

第1図、第2図、第3図および第4図は従来の
ウエツト処理方法を示し、第1図はデイツプ方式
の断面図、第2はスプレー方式の斜視図、第3図
は単孔ノズル方式の斜視図、第4図はシヤワー方
式の斜視図、第5図は本発明になるウエツト処理
方法の一実施例を示し、aは正面図、bはaのA
−A線断面拡大図である。 1……基板、3……薬液、5……真空チヤツ
ク、9……ノズル、10……回転軸。
Figures 1, 2, 3 and 4 show conventional wet treatment methods, with Figure 1 being a sectional view of the dip method, Figure 2 being a perspective view of the spray method, and Figure 3 being a single hole nozzle. FIG. 4 is a perspective view of the shower method, FIG. 5 shows an embodiment of the wet treatment method according to the present invention, a is a front view, and b is an A of a.
- It is an enlarged cross-sectional view taken along the A line. 1... Substrate, 3... Chemical liquid, 5... Vacuum chuck, 9... Nozzle, 10... Rotating shaft.

Claims (1)

【特許請求の範囲】[Claims] 1 被処理物をその上方に取り付け、上記被処理
物を回転させるための被処理物設置台と、該設置
台の上方から上記被処理物に現像液を滴下するた
めの現像液供給多孔ノズルと、該多孔ノズルが上
記被処理物上で回転しながら上記現像液を供給で
きるようなノズル回転機構とを具備して成ること
を特徴とするホトレジスト現像装置。
1. A workpiece installation stand for mounting the workpiece above the workpiece and rotating the workpiece; and a developer supply porous nozzle for dripping a developer onto the workpiece from above the installation stand. A photoresist developing apparatus comprising: a nozzle rotation mechanism capable of supplying the developer while rotating the porous nozzle above the object to be processed.
JP13276981A 1981-08-26 1981-08-26 Wet treatment Granted JPS5836679A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13276981A JPS5836679A (en) 1981-08-26 1981-08-26 Wet treatment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13276981A JPS5836679A (en) 1981-08-26 1981-08-26 Wet treatment

Publications (2)

Publication Number Publication Date
JPS5836679A JPS5836679A (en) 1983-03-03
JPH0362476B2 true JPH0362476B2 (en) 1991-09-26

Family

ID=15089119

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13276981A Granted JPS5836679A (en) 1981-08-26 1981-08-26 Wet treatment

Country Status (1)

Country Link
JP (1) JPS5836679A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6449752B2 (en) * 2014-12-01 2019-01-09 東京エレクトロン株式会社 Development processing method, computer storage medium, and development processing apparatus

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS541603A (en) * 1977-06-06 1979-01-08 Fujitsu Ltd Coating method of magnetic recording media

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS541603A (en) * 1977-06-06 1979-01-08 Fujitsu Ltd Coating method of magnetic recording media

Also Published As

Publication number Publication date
JPS5836679A (en) 1983-03-03

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