JPH0237353A - Method and device for developing resist - Google Patents

Abstract

PURPOSE:To enable development to be uniformly executed in a shortened developing time by developing a resist by the dip developing method, while applying ultrasonic waves to the developing solution. CONSTITUTION:The resist is developed by the dip developing method, while applying ultrasonic waves to the developing solution, thus permitting the developing solution to enhance fluidity and to well diffuse to the bottoms where the development or removal of the resist progresses, the holes of the hole pattern, and closely gathering parts of a pattern, and accordingly, uniform and efficient development to be executed.

Description

DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a resist developing method and a developing apparatus for obtaining a resist pattern used in manufacturing semiconductor devices 11 and the like.

(Conventional technology) Microfabrication technology is indispensable for achieving high integration of semiconductor devices, and as a microfabrication technology that can meet such demands,
Photolithography, X-ray phosphorography, electron beam phosphorography, etc. have been proposed.

Incidentally, the resist used in such lithography is one of the important elements in microfabrication technology because it controls the pattern resolution and the sloop/sight during the process. Therefore, in addition to research on the resist material itself, research on related technologies, such as research on resist development methods, has been energetically conducted.

Methods for developing resist include the spray development method, in which the exposed resist (hereinafter sometimes simply referred to as resist) is supplied with a developer in the form of a mist; Known methods include a paddle development method in which development is carried out by placing the resist on the substrate, and a dip development method in which development is carried out by immersing a resist-coated substrate in a developer tank.

FIG. 3 is a sectional view schematically showing a conventional resist developing device M used in a dip developing method. Note that in this figure, hatching indicating a cross section is partially omitted to avoid complicating the drawing.

In FIG. 3, 11 is a substrate (wafer) having a resist to be developed, 13 is a developer tank (shaded area), and 15 is a developer tank 1.
3 is a supply port for supplying a developer, 17 is a dripping nozzle for supplying a rinsing solution after development, and 19 is a drip nozzle for supplying a rinsing solution to the substrate 1 when the developer is supplied from the supply port 13.
This is a ring-shaped stopper that comes into contact with the substrate 11 and prevents the developer from reaching the back surface of the substrate 11. Further, 21 indicates a support stand on which the substrate 11 is placed, and this support stand 21 has a mechanism for vacuum suctioning the substrate, and is connected to a motor (not shown) so that it can be rotated as shown by the sun in the figure. It has become. Further, 23 is a discharge port for discharging the developer from the developer tank 13, and this discharge port 23 is provided with a valve 23a. In such a configuration, when the valve 23a is closed, the supply port 1
When the developing solution is supplied from step 5, the substrate 11 is immersed in the developing solution and development is performed. FIG. 4 is a diagram showing the state during development, and is a sectional view of the developing device focusing on the peripheral portion of the developer tank 13. Further, the developer is discharged by opening the valve 23a after a predetermined time for development has elapsed. At the end of development and during rinsing, the support stand 21 can be rotated to shake off the developer or rinse solution on the substrate.

Further, in FIG. 3, the reference numeral 25 is a spin cup for receiving the developer and rinse liquid that are shaken off and scattered when the support base 21 is rotated. It has 25b%. The spin cup 25 rises during development (moves in the direction indicated by P in the figure), and descends (in the direction indicated by Q in the figure) when replacing the substrate 11 placed on the support stand 21. The structure is as follows. Further, numeral 27 indicates a transport mechanism for exchanging substrates, and this transport mechanism 27 includes a guide 27a and a transport heald 27b. The transport mechanism 27 operates, for example, as described below. When the development is completed and the spin cup 25 is lowered and the developer tank 13 is lowered to a predetermined position I, the transport mechanism 27 moves closer to the substrate 11 (in the direction indicated by S in the figure). When the conveyor belt 27b reaches the lower side of the substrate 11, the conveyor mechanism 27 lifts the substrate 11 off the support stand 21 (moves in the direction indicated by T in the figure). When the conveyor belt 27b is rotated, the substrate 11 Accordingly, it is carried out from the developing device. Further, a new substrate is carried in by performing the reverse operation of this series of operations.

(Problems to be Solved by the Invention) However, in the conventional dip development method, development was not performed while the developer was kept stationary. Therefore, there is a problem in that the developer is not replaced sufficiently when developing holes in a resist hole pattern or when development progresses and the bottom of the pattern is developed.

If such a problem exists, the development will be performed non-uniformly, and a so-called scum will be generated in which portions that should be removed by development remain, making it impossible to obtain a desired fine pattern. Such deterioration of pattern resolution due to scum is particularly likely to occur in areas where fine patterns are concentrated, and there are many such areas in real semiconductor devices, and in the submicron order that is currently progressing. Considering that most of the semiconductor device 1 is composed of fine patterns, it is very important to improve the developing method.

The present invention has been made in view of the above points, and therefore, an object of the present invention is to provide a resist developing method that solves the above-mentioned problems, allows uniform development, and shortens the developing time. A developing device suitable for the implementation and t! It is about providing.

(Means for Solving the Problem) In order to achieve this object, according to the first invention of this application, when developing a resist by a dip development method, the development is performed while applying ultrasonic waves to the developer. It is characterized by

Further, a resist developing apparatus according to a second aspect of the present invention is characterized in that an ultrasonic wave generator is provided in a developer tank in which a substrate having a resist to be developed is immersed.

In addition, in implementing the second invention of this application, the developing device is
A substrate with resist to be developed! 1211, a rotatable support stand, and this support stand is provided in a tank, and the above-mentioned substrate is placed on this support stand f! The developer tank is provided with a developer solution to which the developer is supplied after the image is placed in the image forming apparatus L, and the developer is discharged after a predetermined period of time for development has elapsed, and an ultrasonic generator is provided in the developer tank. suitable.

(Function) According to the resist developing method of the present invention, the action of the ultrasonic waves applied to the developer allows the developer to circulate well into the bottom of the portion where the resist has been removed, the hole portion of the hole pattern, and the densely packed portion of the fine pattern. It becomes like this. In other words, the developer fluid becomes more fluid (it is more easily exchanged), so that uniform and efficient development can be achieved.

Further, according to the developing device of the preferred embodiment of the present invention, the substrate having the resist to be developed is placed on the support base, and development can be performed while applying ultrasonic waves to the developer, and the developer can be discharged after the development is completed. After that, a rinsing liquid is supplied and the supporting table is rotated to remove the developing liquid and the rinsing liquid, and these processes can be performed as a series of processes with good workability.

(Example) Examples of the resist developing method and the developing apparatus of the present invention will be described below with reference to the drawings. However, the drawings used in the following explanation are merely illustrative to the extent that this invention can be understood, and therefore, the dimensions, shapes, arrangement relationships, etc. of each component are not limited to the illustrated examples. I want you to understand that.

Resist 8 Amount 8 First, an example of the resist developing method of the present invention will be described. The resist developing method of the present invention is characterized in that when developing the resist by a dip developing method, the development is performed while applying ultrasonic waves to the developer. How to apply ultrasonic waves to the developer is +! I can think of many futures. Specifically, there is a method in which an ultrasonic oscillator is fixedly installed inside the developer tank to apply ultrasonic waves to the developer, and an indirect method in which the ultrasonic oscillator is tightly fixed on the wall of the developer tank outside the developer tank. A method of applying ultrasonic waves to the developing solution directly, a method of installing an ultrasonic oscillator above the developer tank and applying ultrasonic waves indirectly to the developer from this oscillator, and a method using an ultrasonic oscillator above the developer tank. A suitable method is to immerse the ultrasonic oscillator in a developer and apply ultrasonic waves to the developer during resist development. The output and oscillation frequency of the ultrasonic waves used depend on the type of developer and the type of resist. An embodiment of a resist developing device will be explained using an example that is commonly used in the device.

FIG. 1(A) is a cross-sectional view schematically showing the configuration of a resist developing device according to an embodiment, and is shown in correspondence with FIG. 3. FIG. Further, FIG. 1(B) is a plan view of the resist developing apparatus of the embodiment as viewed from the direction indicated by U in FIG. 1(A). In these figures, the same components as those shown in FIG. 3 are designated by the same reference numerals, and some explanations thereof will be omitted.

In FIGS. 1(A) and 1(8), what is indicated by 51 is an ultrasonic oscillator as an ultrasonic generator.

The ultrasonic oscillator 51 of this embodiment is provided along the inner wall of the developer tank 13 and has a ring shape. 5
It consists of a first ultrasonic oscillator indicated by 1a and a second ultrasonic oscillator indicated by 51b provided on the inner wall near the bottom. -th and second ultrasonic oscillators 51a,
It is preferable that the 51b can be operated simultaneously or independently, and it is preferable that the output and oscillation frequency can be roughly varied. Note that it is clear that the shape, installation position, and number of ultrasonic oscillators 51 can be changed to appropriate values in consideration of the size of the substrate to be processed. Of course, it is also possible to increase the size of the developer tank and install multiple support stands, and increase the number of conveyance mechanisms corresponding to the number of support stands to develop resists on multiple substrates at the same time. Since a problem arises when it becomes necessary to vary the development time between substrates, it is still preferable to use a single-wafer method.

The developing device of the embodiment shown in FIG. 1 can be operated, for example, as described below. Note that such operations are performed under the control of a control circuit (not shown) provided in this developing device.

FIG. 2 is a flowchart showing an example of the operation of the developing device of the embodiment shown in FIG. The operation of this developing device will be explained below with reference to FIG.

First, the substrate 11 is carried in as described below (step S1), and the guide 27 provided in the transport mechanism 27
When a is moved a predetermined distance to the support stand 21 side, a substrate having a resist to be developed is supplied onto the conveyor belt 27b. Next, the conveyor belt 27b is rotated and the substrate lllFr on this belt is transferred to the support stand 21. Send it to the opposite position,
The guide 27a 'Fr is lowered and the substrate 11 is placed on the support stand 21.
Place it on. The substrate 11 is supported on the support stand 21 by a vacuum suction mechanism.
Fixed to. The guide 27a returns to a predetermined position where there is no problem in raising the spin cup 25.

Next, the spin cup 25 is raised (step 52).The support table 21 is then rotated at, for example, 1,000 to 6,000 rpm to remove foreign matter on the substrate 11, and then the rotation of the support table is stopped (step S3).

Next, the developer tank 13 is raised to a predetermined position. Accordingly, the ring-shaped stopper 19 comes into contact with the back surface of the substrate 11.

Thereafter, a developer is supplied from the supply port 15 to the developer tank 13 so that the substrate 11 is immersed in the developer. This state corresponds to the state shown in FIG. 4 (step S4).

Next, the ultrasonic oscillator 51 is operated to apply ultrasonic waves to the developer (step S5). Step S6) monitors whether or not a predetermined development time has been reached, and when the predetermined time has elapsed, the operation of the ultrasonic oscillator 51 is stopped and the discharge valve 23a of the developer discharge port 23 is opened to discharge the developer. The developer in the tank 13 is discharged to the outside of the tank (step S7).

Next, the developer tank 13 is lowered and the stop ring 19 is separated from the substrate 11. Next, the rinse liquid is applied to the substrate 11 from the rinse liquid dripping nozzle 17 to rinse the substrate 11 (step S8). In this case, the support stand 21 is rotated during rinsing. The rotation speed is, for example, 100 to 300.
A suitable value is set within the range of 0 rpm.

Next, in order to shake off the rinsing liquid from the substrate 11, the support stand 21 is rotated at a higher speed than the rotation speed during rinsing (step S9
), and its rotational speed is, for example, a suitable value within the range of 2000 to 6000 rpm.

Next, the rotation of the support stand 21 is stopped (step SIO)
, then lower the spin cup 251Fr (step 1
1) Next, the board unloading mechanism 25 is operated in the reverse order of the board loading procedure explained in step S1, and the board 1
After carrying out step S1, the substrates can be developed one by one by repeating the process from step S1.

It is clear that the above description of the operation is merely an example, and various changes can be made. For example, it is also possible to perform rinsing using a dipping method similar to the developer, and apply ultrasonic waves to the rinsing solution at that time.

(Effects of the Invention) As is clear from the above description, according to the resist developing method of the present invention, the developing solution can be used to develop not only the entire resist surface but also the entire surface of the resist due to the action of ultrasonic waves applied to the developing solution.
It also penetrates better into the bottom of areas where the resist has been removed more easily, into the holes of hole patterns, and into areas where fine patterns are densely packed. Therefore, since the developability of the resist over the entire substrate surface is made uniform, the generation of scum can be prevented, and a desired resist developing device can therefore be obtained. Furthermore, since the replaceability of the developer is improved, development can be carried out efficiently, and the development time can also be shortened.

Further, according to the resist developing device of the present invention, resist development can be easily performed while applying ultrasonic waves to the developer.

[Brief explanation of the drawing]

FIGS. 1(A) and 1(B) are diagrams for explaining an embodiment of a resist developing apparatus suitable for carrying out the resist developing method of the present invention, and FIG. 1(A) is a sectional view thereof; Figure (B
) is a plan view thereof, FIG. 2 is a flowchart showing an example of the operation of the developing device of the embodiment, FIG. 3 is a sectional view showing an example of a conventional resist developing device, and FIG. FIG. 2 is a plan view for explanation and a diagram showing a state during development. 11... Substrate (wafer) having a resist to be developed 13... Developer tank, 15... Developer supply port 17... Nozzle for dropping rinse liquid 19... Stop ring, 2I ...Support stand 23.
...Developer outlet, 23a...Valve 25...
Spin cup 25a...train, 25b...exhaust port 27
...Conveyance mechanism, 27a...Guide 27b.
...Transport belt 41...Developer solution 51...Ultrasonic generator (ultrasonic oscillator) 51a...
First ultrasonic oscillator 51b... second ultrasonic oscillator. Patent Applicant: Oki Electric Industry Co., Ltd. - Seiichi Ichiichi) 41: Diagrams used to explain the conventional developer and the present invention. Name of the invention Resist developing method and its relationship to the snowmaking 3 amendment case Patent applicant address (〒-105) 1-7-12 Toranomon, Minato-ku, Tokyo Name (029) Representative of Oki Electric Industry Co., Ltd. Person Komura Polarized Light 4 Agent 170 ffi (988)5563
Address: 1-20-56 Higashiikebukuro, Toshima-ku, Tokyo Target of amendment Contents of drawing 7 amendment

Claims (3)

[Claims] (1) A method for developing a resist, which is characterized in that when developing the resist by a dip development method, the development is performed while applying ultrasonic waves to the developer. (2) A resist developing apparatus characterized in that an ultrasonic generator is provided in a developer tank in which a substrate having a resist to be developed is immersed. (3) A rotatable support table on which a substrate having a resist to be developed is placed, and the support table is in a tank, and after the substrate is placed on the support table, a developer is supplied and the development is carried out. A resist developing device comprising: a developer tank for discharging the developer after a predetermined period of time has elapsed, the resist developing device comprising: an ultrasonic generation section provided in the developer tank.