JPH10321517A - Processing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a processing method for facilitating the reproduction of processing liquid by collecting the processing liquid used for processing a processed object without extremely lowering its concentration. SOLUTION: This processing method has a processing to liquid-supply process for supplying the processing liquid onto the surface of an object G to be processed, a processing liquid collecting process for collecting the processing liquid on the surface of the object G into a collection container 35 by arranging the collection container 35 around the object G and rotating the collection container G at a 1st rotating speed, cleaning process for cleaning the object G by supplying the processing liquid onto the surface of the object G and rotating the object G to be processed at 2nd rotating speed, and drying process for drying the object G by rotating the object G at a 3rd rotating speed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a processing method for supplying a processing liquid to a processing target such as an LCD substrate or a semiconductor wafer to perform processing.

[0002]

2. Description of the Related Art Generally, a liquid crystal display (LC)
D) In the manufacturing process of the device, for example, ITO (Indium Tin Oxi) is formed on an LCD substrate (glass substrate).
de) In order to form a thin film and an electrode pattern, a circuit pattern and the like are reduced and transferred to a photoresist by using a photolithography technique similar to that used in a semiconductor manufacturing process, and this is developed. Processing is performed.

[0003] For example, a rectangular LCD substrate (glass substrate), which is an object to be processed, is cleaned by a cleaning apparatus, and then the LCD substrate is cleaned.
The substrate is subjected to hydrophobic treatment by an adhesion treatment device,
After being cooled by the cooling processing device, a photoresist film, that is, a photosensitive film is applied and formed by a resist coating device. Then, after the photoresist film is heated by a heat treatment device and subjected to baking treatment, a predetermined pattern is exposed by an exposure device, and the exposed LCD substrate is coated with a developing solution by a developing device. After the development, the developer is washed away with a rinse solution to complete the processing.

Here, the developing process is performed first on the exposed LCD.
A developing solution is supplied to the surface of the substrate by a spin coating method, a spray method, or the like to perform development. Next, a process of rotating the LCD substrate while supplying a rinsing liquid to the surface of the LCD substrate to wash out the developer by centrifugal force, and after washing, drying the LCD substrate by rotating the LCD substrate at a high speed is performed. . In addition, the effective use of resources is achieved by collecting and reusing the developing solution that has been rinsed together with the rinsing liquid from the surface of the LCD substrate.

[0005]

However, in this type of conventional developing processing, since the recovered developer is considerably diluted by a rinsing liquid, it is difficult to adjust the density. It was difficult to reuse the developer.

The present invention has been made in view of the above circumstances, and recovers a processing solution used for processing an object to be processed in a state where the concentration is not extremely reduced, thereby facilitating the regeneration of the processing solution. It is an object to provide a processing method.

[0007]

In order to achieve the above object, an object of the present invention is to provide a processing liquid supply step of supplying a processing liquid to a surface of a processing object, and a recovery container around the processing object. A collecting container disposing step of disposing the processing object, a processing liquid collecting step of collecting the processing liquid on the surface of the processing object in the collection container by rotating the processing object at the first rotation speed, and A cleaning step of supplying the cleaning liquid to the surface and cleaning the object by rotating the object at a second rotational speed;
A drying step of drying the object by rotating the object at a third rotation speed.

In the processing method of the first aspect, in the processing liquid supply step, the processing object is processed by supplying the processing liquid to the surface of the processing object and leaving it to stand for a predetermined time. Next, in a collection container arranging step, a collection container is arranged around the object to be processed. In the processing liquid collecting step, first, the processing liquid on the surface of the processing object is dropped to the periphery by centrifugal force by rotating the processing object at the first rotation speed, and the recovery liquid disposed around the processing object is first removed. Collect the processing solution in the container. This makes it possible to recover the processing liquid in a state where the concentration has not been extremely reduced. This first
The number of rotations is, for example, 50 to 50, as described in claim 2.
It can be in the range of 150 rpm. that way,
Most of the processing liquid on the surface of the object to be processed can be recovered in the recovery container in a short time of about 1 to 3 seconds. In the treatment liquid collecting step, a cleaning liquid may be supplied to the surface of the object to be treated, as described in claim 3.

Next, in a cleaning step, a cleaning liquid is supplied to the surface of the object to be processed. Then, the object is cleaned by rotating the object at the second rotation speed. This second
Is set to, for example, 100
It can be in the range of ~ 200 rpm. In this cleaning step, the back surface can be simultaneously cleaned by supplying a cleaning liquid to the back surface of the object to be processed, as described in claim 4. As described in claim 5, when performing this cleaning step, it is preferable not to dispose a collection container around the object to be processed.

Next, in the drying step, the object to be processed is
The object to be processed is dried by rotating at a rotation speed of. This third rotational speed is, as described in claim 3,
For example, it can be in a range of 1200 to 2000 rpm. Then, the surface of the object to be processed can be dried in about 20 seconds. In the drying step, when the object to be processed is rotated at a rotation speed exceeding 2000 rpm, the cleaning liquid shaken off from the surface of the object to be scattered becomes mist, and the cleaning liquid adheres again to the surface of the object to be processed. Further, if the object to be processed is rotated at a rotational speed of less than 1200 rpm, it takes too much time to dry and requires a long processing time. In the case where the cleaning step is performed, it is preferable that the collection container is not disposed around the object to be processed, as described in claim 5. In the drying step, a drying gas may be supplied to the surface of the object to be processed.

In the present invention, when the object to be processed is, for example, a rectangular substrate, the processing liquid supply means is provided in the processing liquid supply step in the short side direction of the object to be processed. It is preferable to supply the processing liquid to the surface of the processing object while moving. Then, the moving distance of the processing liquid supply means is reduced and the supply time is shortened, so that the processing can be made uniform and the processing time can be shortened.

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below with reference to the accompanying drawings. FIG. 1 is a perspective view of a processing system for processing an LCD substrate G as an object to be processed by using a photolithography technique.

This processing system, as shown in FIG.
A loader unit 1 for loading and unloading an LCD substrate G (hereinafter, referred to as a “substrate G”), a first processing unit 2 for the substrate G, and a relay unit 3 connected to the first processing unit 2. Second processing unit 4
It is mainly composed of Note that an exposure device 6 for exposing a predetermined fine pattern on the resist film via the transfer unit 5 can be connected to the second processing unit 4. The loader unit 1 includes a cassette mounting table 8 for mounting a cassette 7 for storing an unprocessed substrate G and a cassette 7a for storing a processed substrate G, and a cassette 7 and 7a on the cassette mounting table 8. Movement and rotation (θ) in the horizontal (X, Y) direction and the vertical (Z) direction to carry in and out the substrate G between
And possible tweezers 9 for carrying in and out the substrate.

The first processing unit 2 includes a brush cleaning device 12 for brush cleaning the substrate G on one side of the transfer path 11 of the main arm 10 which can move in the X, Y, and Z directions and can rotate in the θ direction. A jet water washing device 13 for washing the substrate G with high-pressure jet water, an adhesion treatment device 14 for hydrophobizing the surface of the substrate G, and a cooling treatment device 15 for cooling the substrate G to a predetermined temperature. On the other side of the transport path 11, a resist coating device 16 and a coating film removing device 17 are arranged.

On the other hand, the second processing section 4, like the first processing section 2, has a main arm 10a that can move in the X, Y, and Z directions and rotate in the θ direction.
On one side of the transfer path 11a, a heating processing apparatus 18 for heating the substrate G before and after the application of the resist solution to perform pre-bake or post-bake is disposed. A developing device 20 for performing the operation is arranged.

The transfer section 5 includes a cassette 19a for temporarily holding the substrate G, a transfer pin set 19b for transferring the substrate G in and out of the cassette 19a,
A transfer table 19c for the substrate G is provided. The configurations of the first processing unit 2 and the second processing unit 4, the arrangement of various devices, and the like can be appropriately changed.

In the processing system configured as described above, the unprocessed substrate G accommodated in the cassette 7 is taken out by the loading / unloading tweezers 9 of the loader unit 1 and thereafter, the main arm of the first processing unit 2 is removed. The brush is transferred to the brush cleaning device 12. The substrate G that has been brush-cleaned in the brush cleaning device 12 is cleaned with high-pressure jet water in the jet water cleaning device 13 as necessary. Thereafter, the substrate G is subjected to a hydrophobizing treatment by an adhesion treatment device 14 and cooled by a cooling treatment device 15, and then a photoresist film, that is, a photosensitive film is applied and formed by a resist coating device 16. The unnecessary resist film on the peripheral portion of the substrate G is removed by the coating film removing device 17. Then, after the photoresist film is heated by the heat treatment device 18 and subjected to baking treatment, the exposure device 6 exposes a predetermined pattern. Then, the substrate G after the exposure is transported into the developing device 20, and after being developed with the developing solution, the developing solution is washed away with the rinsing solution to complete the developing process.

The processed substrate G that has been subjected to the development processing is accommodated in the cassette 7a of the loader unit 1 and then carried out and transferred to the next processing step.

Next, the configuration of the developing device 20 incorporated in the processing system will be described. FIG. 2 shows the developing device 2
FIG. 3 is a schematic front view for explaining the configuration of FIG.
3 is a plan view of the developing device 20. FIG.

As shown in FIGS. 2 and 3, the developing device 20 comprises a spin chuck 21 for holding and rotating the substrate G by vacuum suction, and a spin chuck 21 for rotating the substrate G.
And a cylindrical cup 22 having an open upper surface and arranged to surround the substrate G. As shown in FIG. 3, the substrate G has, for example, a rectangular shape with a long side length L1 and a short side length L2 in plan view. Spin chuck 21
Is supported on the upper end of the rotating shaft 26 of the motor 25,
The substrate G is rotated by rotating the spin chuck 21 by operating the motor 25.
The motor 25 is controlled by a control unit 27, and the amount of rotation and the number of rotations of the substrate G are arbitrarily set by the control of the control unit 27.

The spin chuck 21 and the cup 22 surrounding the substrate G are supported so as to be able to move up and down. A pinstone rod 31 of a lifting cylinder 30 shown in FIG. 2 is connected to the outer surface of the cup 22 via a bracket 32. Thus, the cup 22 is moved up and down with the extension operation of the elevating cylinder 30. This lifting cylinder 3
The operation of “0” is controlled by the control unit 27 described above.

The upper end of the cup 22 is formed on an inclined surface 33 which is inclined inward, and is formed on the inner peripheral surface of the cup 22 in an annular shape so as to partition the inside of the cup 22 up and down. A ring wall 34 is provided which slopes toward the bottom. A space below the ring wall 34 inside the cup 22 is a collection container 35 arranged around the substrate G when collecting the developer from the surface of the substrate G as described later. The space above the ring wall 34 and below the inclined surface 33 is a casing cover 36 that is disposed around the substrate G when the substrate G is washed and dried as described later. When the cup 22 is lowered by the shortening operation of the elevating cylinder 30, the ring wall 34 moves to a position below the substrate G held on the spin chuck 21 as shown by a solid line 34 in FIG. Thus, the casing cover 36 is placed around the board G. On the other hand, when the lifting / lowering cylinder 30 is extended to move the cup 22 upward, the ring wall 34 is positioned above the substrate G held on the spin chuck 21 as shown by a two-dot chain line 34 'in FIG. , Whereby the collection container 35 is placed around the substrate G.

On the bottom surface 40 of the cup 22, there is provided an annular outer peripheral wall 41 and a partition wall 42 arranged at a predetermined interval inside the outer peripheral wall 41, and the casing cover 36 described above is provided. The inside atmosphere communicates with the space between the outer peripheral wall 41 and the partition wall 42, and the atmosphere inside the collection container 35 communicates with the space inside the partition wall 42. A drain hole 43 communicating with a space between the outer peripheral wall 41 and the partition wall 42 and a drain hole 44 communicating with a space inside the partition wall 42 are provided below the bottom surface 40 of the cup 22. ing. In addition, cup 22
At the approximate center of the bottom surface 40, there are provided a plurality of back surface cleaning nozzles 45 for supplying, for example, pure water as a cleaning liquid toward the back surface of the substrate G sucked and held by the spin chuck 21.

Above the cup 22, a cleaning liquid supply nozzle 50 for supplying, for example, pure water as a cleaning liquid to the center of the surface of the substrate G sucked and held by the spin chuck 21 is provided.
Similarly, at the center of the surface of the substrate G, a drying gas supply nozzle 51 for supplying an inert gas such as N2 gas as a drying gas is disposed. The operations of the cleaning liquid supply nozzle 50 and the drying gas supply nozzle 51 are also controlled by the control unit 27 described above.

Further, a developer supply nozzle for supplying a developer as a processing liquid to the surface of the substrate G sucked and held by the spin chuck 21 is provided above the cup 22 (to the right in FIGS. 2 and 3). The developing solution supply nozzle 55 is configured to be moved across the upper side of the cup 22 by a drive mechanism (not shown). The developing solution supply nozzle 55 is connected to a liquid sending circuit 58 that sends the developing solution stored in the tank 56 by operating a pump 57. As shown in FIG. 4, on the lower surface of the developing solution supply nozzle 55, a large number of developing solution discharge ports 59 are provided in a densely arranged state over the entire width, and are stored in a tank 56 by operation of a pump 57. By feeding the developing solution through the liquid sending circuit 58, the developing solution can be discharged from these discharge ports 59 in a film form without any gap. In addition,
The operation of the pump 57 is also controlled by the control means 27 described above, and the timing of discharging the developer is arbitrarily set by the control of the control means 27.

The length L of the developer supply nozzle 55 is
Since the length of the long side of the substrate G is longer than L1 (L> L1), as described above, the developing solution is discharged in a film form from the many discharge ports 59 on the lower surface of the developing solution supply nozzle 55. If the developer supply nozzle 55 is moved across the upper side of the cup 22 while the developer is supplied, the developer can be supplied evenly to the entire surface of the substrate G.

As shown in FIG. 2, the tank 56 for storing the developer and the drain hole 4 communicating with the space inside the partition wall 42 of the bottom surface 40 of the cup 22 described above.
4, a collecting circuit 60 for returning the developer collected from the surface of the substrate G by the collecting container 35 to the inside of the tank 56 is connected as described later. In the middle of the collecting circuit 60, a regenerating means 61 for regenerating the developer collected by the collecting container 35 is provided. The regeneration processing means 61 includes a gas-liquid separation mechanism 62 for removing air bubbles from the collected developer and a filter 63 for removing impurities in the developer.

The processing steps in the developing device 20 will now be described with reference to the flowchart shown in FIG. That is, first, the main arm 10a of the processing system described with reference to FIG.
The substrate G is carried into the developing device 20 (S1). Then, the substrate G is firmly sucked and held on the spin chuck 21. After transferring the substrate G onto the spin chuck 21, the main arm 10 a moves out of the developing device 20.

Next, under the control of the control means 27, the motor 25 is appropriately operated to rotate the substrate G on the spin chuck 21 by a desired angle, and as shown by the two-dot chain line G "in FIG. The substrate G is aligned so that the long side of the substrate G is parallel to the developer supply nozzle 55 (S2).

Next, the developer supply nozzle 55 starts moving by a drive mechanism (not shown) so as to cross over the cup 22. During this movement, the developer supply nozzle 55
The developer is discharged in the form of a film from a number of discharge ports 59 provided on the lower surface, and the developer is supplied to the entire surface of the substrate G (S
3). Then, by leaving the substrate G for a predetermined time,
The surface is developed (S4).

Here, since the alignment of the substrate G has already been performed in step S2 so that the long side of the substrate G is parallel to the developer supply nozzle 55, the developer supply nozzle Numeral 55 supplies the developing solution to the surface of the substrate G while moving along the short side direction of the substrate G. Therefore, the timing of discharging the developing solution by the developing solution supply nozzle 55 is performed only while the developing solution supply nozzle 55 is moving along the short side direction located above the substrate G. What is necessary is to control. The control of the discharge timing of the developer is performed by the control unit 27 described above.
This is performed by controlling the operation of the pump 57.

As shown in FIGS. 3 and 4, the length L of the developer supply nozzle 55 is longer than the length L1 of the long side of the substrate G. If the developer is discharged once from the discharge port 59 by being moved only once above the substrate G, the developer discharged in the form of a film is
It can be supplied evenly to the surface. Therefore, it is sufficient to discharge the developing solution from the discharge port 59 only while the developing solution supply nozzle 55 moves the length L2 of the short side of the substrate G, so that the supply time of the developing solution can be shortened, and the uniformity of the developing process can be reduced. Can be measured. Further, the moving distance of the developer supply nozzle 55 can be reduced, and the development processing time can be shortened.

For example, as shown by the solid line G in FIG. 3, when the developer supply nozzle 55 is moved to supply the developer while the long side of the substrate G is perpendicular to the developer supply nozzle 55, The developer supply nozzle 55 moves along the long side direction of the substrate G. In this case, the developer must be continuously discharged from the discharge port 59 while the developer supply nozzle 55 moves along the length L1 of the long side of the substrate G. As the moving distance of the developer supply nozzle 55 increases, the supply time of the developer must also be increased. For this reason, on the surface of the substrate G, the contact time with the developing solution is prolonged at a portion where the developing solution is supplied quickly, and the contact time with the developing solution is shortened at a portion where the developing solution is supplied late, and The contact time greatly increases in some cases, making it difficult to perform uniform development processing. For example, when forming a pattern on a glass substrate for a liquid crystal display, if the contact time with the developing solution is partially different, the line width characteristic of the surface of the substrate G is deteriorated, and the thick portion of the developing pattern and the thinning of the developing pattern are reduced. Parts will be created. On the other hand, in order to make the contact time with the developing solution on the surface of the substrate G as uniform as possible as a whole, the moving speed of the developing solution supply nozzle 55 may be increased. However, in this case, it becomes difficult to uniformly supply the developer discharged in the form of a film from the discharge port 59 to the entire surface of the substrate G, and it becomes impossible to form a uniform liquid. Further, when the developing solution supply nozzle 55 is moved along the long side direction of the substrate G, the moving distance of the developing solution supply nozzle 55 becomes longer accordingly, so that it is difficult to reduce the development processing time.

On the other hand, as described in the embodiment of the present invention, by supplying the developing solution by moving the developing solution supply nozzle 55 along the short side direction of the substrate G, the developing solution is supplied. As compared with the case where the supply nozzle 55 is moved along the long side direction of the substrate G, the supply time of the developer can be considerably shortened, and the contact time with the developer becomes substantially equal overall. Therefore, there is an advantage that the development processing is uniform and the line width characteristics of the surface of the substrate G are excellent. Further, since the moving distance of the developer supply nozzle 55 can be reduced, the processing time can be shortened.

Next, when the developing process is completed, first, the cup 22 is raised by the extension operation of the lifting cylinder 30 described with reference to FIG. As a result, the ring wall 34 moves to a position above the substrate G held on the spin chuck 21 as shown by the two-dot chain line 34 'in FIG. It will be in the state that was done. Then, the supply of, for example, pure water as a cleaning liquid starts from the cleaning liquid supply nozzle 50 above the cup 22 toward the center of the surface of the substrate G. Further, the motor 25 is operated under the control of the control means 27, and the substrate G held on the spin chuck 21 is rotated at the first rotation speed. As a result, the developing solution that has been loaded on the substrate G is first shaken around by centrifugal force in a state where the concentration has not been extremely reduced, and is collected in the collection container 35 (S5).

The first rotation speed for rotating the substrate G in this step S5 can be, for example, in the range of 50 to 150 rpm. Then, almost all of the developing solution can be shaken around the substrate G by centrifugal force in a short time of about 1 to 3 seconds and collected in the collection container 35 first. The developer collected in the collection container 35 in this way is in a state in which no extreme reduction in concentration has occurred because the cleaning liquid has not yet been mixed so much. The recovered developer is sent through a recovery circuit 60 connected to a drainage hole 44 provided on the bottom surface 40 of the cup 22, and the developing solution from which bubbles have been removed and filtered by the regeneration processing unit 61 is removed. Tank 5
6 will be returned as it is. As described above, since the developer collected in the collection container 35 can be returned to the tank 56 without adjusting the concentration, the developer can be easily reused.

Next, in this step S5, even after the substrate G is rotated at the first rotation speed for about 1 to 3 seconds to collect the developing solution, the cleaning solution supply nozzle 50 above the cup 22 supplies the substrate G with the cleaning solution. Continue supplying pure water as a cleaning liquid toward the center of the surface. Then, the operation amount of the motor 25 is changed by the control of the control
The substrate G held thereon is rotated at a second rotation speed. As described above, while continuously supplying the cleaning liquid to the surface of the substrate G, the cleaning liquid is shaken around by the centrifugal force to clean the substrate G (S6).

The second number of rotations for rotating the substrate G in step S6 can be, for example, in the range of 100 to 200 rpm. Then, the substrate G can be cleaned in about 18 seconds, for example. Further, in this step S6, the cup 22 is lowered by the shortening operation of the elevating cylinder 30 described above. As a result, as shown by a solid line 34 in FIG.
1 to a position below the substrate G held on
The casing cover 36 is arranged around the substrate G. As a result, the cleaning liquid that has been shaken off by centrifugal force from above the substrate G is captured by the casing cover 36. Then, the captured developer is appropriately discarded through a drainage hole 43 provided in the bottom surface 40 of the cup 22.

In this step S6, for example, pure water is supplied as a cleaning liquid from the back surface cleaning nozzle 45 described with reference to FIG. The washing liquid used for washing the back surface is also shaken around by the centrifugal force, and the casing cover 36
And is appropriately discarded from the drain hole 43.

Next, in this step S6, after the substrate G is rotated at the second rotation speed for about 18 seconds to wash out the developing solution, the supply of the cleaning solution from the cleaning solution supply nozzle 50 above the cup 22 is stopped. I do. Then, supply of an inert gas such as N 2 gas as a drying gas is started from the drying gas supply nozzle 51 above the cup 22 toward the center of the surface of the substrate G. Further, the operation amount of the motor 25 is changed by the control of the control means 27, and the substrate G held on the spin chuck 21 is rotated at the third rotation speed. Thus, the substrate G is dried by rotating the substrate G at the third rotation speed while continuously supplying the drying gas to the surface of the substrate G (S7).

The third rotation speed for rotating the substrate G in this step S7 is, for example, 1200 to 2000 rpm.
m. Then, the surface of the substrate G can be dried in about 20 seconds. In this step S7, when the substrate G is rotated at a rotation speed exceeding 2000 rpm, the cleaning liquid shaken off from the surface of the substrate G is scattered and becomes a mist, and the cleaning liquid adheres again to the surface of the substrate G. Further, the substrate G is set at 1200 rpm.
If it is rotated at a rotational speed less than m, it takes too much time for drying because it is too slow, and the processing time becomes longer.

Next, in this step S7, the substrate G is rotated at a third rotation speed for about 20 seconds for drying, and then the drying gas is supplied from the drying gas supply nozzle 51 above the cup 22. To stop. Further, the operation of the motor 25 is also stopped by the control of the control means 27, and the rotation of the substrate G held on the spin chuck 21 is stopped. Thus, the processing in the developing device 20 ends (S8).

Next, the main arm 10a of the processing system described with reference to FIG. And
The substrate G held on the spin chuck 21 is transferred to the main arm 10a. Then, the main arm 10
The substrate G is carried out of the developing device 20 as a moves out of the developing device 20 (S9).

In this embodiment, an example is described in which the processing method of the present invention is applied to a developing device incorporated in a processing system for an LCD substrate. However, the method of the present invention is applied to other processing such as etching processing and cleaning processing. It is needless to say that the present invention can be applied to the case where Further, the present invention can be applied to a case where a silicon wafer or the like is processed as a processing target.
Further, similarly to the developer supply nozzle 55, the cleaning solution supply nozzle 50 may be configured to move across the upper side of the cup 22. Further, the drying gas supply nozzle 51 may be fixed.

[0045]

According to the present invention, it is possible to recover the processing liquid used for processing the object to be processed in a state where the concentration is not extremely reduced, and it is possible to reuse the processing liquid with almost no concentration adjustment. Therefore, the regeneration of the processing solution is facilitated. By supplying the processing liquid by moving the developing liquid supply means along the short side direction of the object to be processed, the supply time of the processing liquid can be shortened, the processing becomes uniform, and the processing time becomes longer. Also has the feature that it can be shortened.

[Brief description of the drawings]

FIG. 1 is a perspective view of a processing system for applying and developing an LCD substrate as a processing target.

FIG. 2 is a schematic front view for explaining a configuration of a developing device.

FIG. 3 is a plan view of the developing device.

FIG. 4 is a perspective view of a processing liquid supply nozzle.

FIG. 5 is a flowchart showing processing steps according to the embodiment of the present invention.

[Explanation of symbols]

 G LCD substrate 27 Control means 35 Collection container 45 Backside cleaning nozzle 50 Cleaning liquid supply nozzle 51 Drying gas supply nozzle 55 Developer supply nozzle

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Norio Uchidaira 272, Oomachi, Otsu-cho, Kikuchi-gun, Kumamoto Prefecture 4 Tokyo Electron Kyushu Co., Ltd. Otsu Office (72) Inventor Mitsuhiro Sakai Otsu-cho, Kikuchi-gun, Kumamoto Tokyo Electron Kyushu Co., Ltd. Otsu Office, 72, Heisei 272, Tokyo Onion (72) Inventor Ikuo Sato Otsu Town, Kikuchi-gun, Kumamoto Prefecture, Japan

Claims (7)

[Claims] A processing liquid supply step of supplying a processing liquid to a surface of the processing object; a collection container arranging step of arranging a collection container around the processing object; A processing liquid collecting step of collecting the processing liquid on the surface of the processing object into the collection container by rotating the cleaning object; supplying a cleaning liquid to the surface of the processing object;
A cleaning step of cleaning the object by rotating the object at a third rotational speed; and a drying step of drying the object by rotating the object at a third rotational speed. Method. 2. The method according to claim 1, wherein the first rotation speed is 50 to 150 rpm.
The processing method according to claim 1, wherein the second rotation speed is 100 to 200 rpm, and the third rotation speed is 1200 to 2000 rpm. 3. The processing method according to claim 1, wherein in the processing liquid collecting step, a cleaning liquid is supplied to a surface of the object to be processed. 4. The cleaning step, wherein a cleaning liquid is supplied to a back surface of the object to be processed.
Or the processing method according to any one of 3. 5. The processing method according to claim 1, wherein in the cleaning step and the drying step, a collection container is not disposed around the object to be processed. 6. The processing method according to claim 1, wherein in the drying step, a drying gas is supplied to a surface of the object to be processed. 7. An object to be processed is a rectangular substrate, and in the processing liquid supply step, a processing liquid is supplied to a surface of the object while moving a processing liquid supply unit in a short side direction of the object to be processed. The processing method according to any one of claims 1, 2, 3, 4, 5 and 6, wherein