KR101132090B1 - Substrate drying apparatus, substrate processing apparatus and substrate drying method - Google Patents

Abstract

The present invention relates to a substrate drying apparatus, a substrate processing apparatus and a substrate drying method. In the first and second cleaning / drying processing units, the rinse liquid supply nozzle is connected to the degassing module through the rinse liquid supply pipe. The degassing module is connected to the rinse liquid supply source through the rinse liquid supply pipe. In the degassing module, degassing of the rinse liquid is performed. The rinse liquid after the degassing treatment is supplied to the rinse liquid supply nozzle through the rinse liquid supply pipe. During the drying treatment of the substrate, the rinse liquid is supplied onto the substrate from the rinse liquid supply nozzle. As a result, a liquid layer of a rinse liquid is formed on the substrate.

Description

SUBSTRATE DRYING APPARATUS, SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE DRYING METHOD

The present invention relates to a substrate drying apparatus for drying a substrate, a substrate processing apparatus having the same, and a substrate drying method.

Substrate processing apparatus for processing various substrates such as semiconductor substrate, liquid crystal display substrate, plasma display substrate, optical disk substrate, magnetic disk substrate, magneto-optical disk substrate, photomask substrate Is being used.

In such a substrate processing apparatus, generally, several different processes are performed continuously with respect to one board | substrate. The substrate processing apparatus described in Japanese Patent Laid-Open No. 2003-324139 is composed of an indexer block, an antireflection film processing block, a resist film processing block, a development processing block, and an interface block. An exposure apparatus, which is an external device separate from the substrate processing apparatus, is disposed adjacent to the interface block.

In the above substrate processing apparatus, the substrate loaded from the indexer block is conveyed to the exposure apparatus through the interface block after formation of the antireflection film and coating process of the resist film are performed in the antireflection film processing block and the resist film processing block. After the exposure process is performed on the resist film on the substrate in the exposure apparatus, the substrate is conveyed to the developing block through the interface block. After the resist pattern is formed by developing the resist film on the substrate in the developing block, the substrate is transferred to the indexer block.

In recent years, with the increase in the density and the high integration of devices, the miniaturization of resist patterns has become an important problem. In a conventional general exposure apparatus, exposure processing is performed by reducing and projecting a pattern of a reticle onto a substrate through a projection lens. However, in such a conventional exposure apparatus, since the line width of the exposure pattern is determined by the wavelength of the light source of the exposure apparatus, there is a limit to the miniaturization of the resist pattern.

Therefore, a liquid immersion method has been proposed as a projection exposure method that makes it possible to further refine the exposure pattern (see, for example, International Publication No. 99/49504 pamphlet). In the projection exposure apparatus of International Publication No. 99/49504 pamphlet, liquid is filled between the projection optical system and the substrate, so that the exposure light on the substrate surface can be shortened. Thereby, it becomes possible to further refine an exposure pattern.

In the projection exposure apparatus of the International Publication No. 99/49504 pamphlet, the exposure treatment is performed while the substrate and the liquid are in contact. Therefore, the substrate is carried out from the exposure apparatus in a state where the liquid is attached. When the exposure apparatus using the liquid immersion method as described in the above-mentioned International Publication No. 99/49504 pamphlet is provided as an external apparatus in the substrate processing apparatus of Japanese Patent Laid-Open No. 2003-324139, the substrate taken out from the exposure apparatus In order to prevent the adhered liquid from falling into the substrate processing apparatus, it is necessary to dry the substrate after the exposure treatment.

Drying of a board | substrate is performed by, for example, rotating a board | substrate and shaking off the liquid adhered to a board | substrate. However, in this case, fine droplets may remain on the substrate. If the droplets remain, reaction products such as watermarks are generated on the substrate, which causes the processing failure of the substrate.

In addition, after the development process of a board | substrate, a washing process is performed using liquid, such as pure water, in order to wash off the developing solution on a board | substrate. In this case also, it is necessary to dry the substrate. However, as described above, minute droplets may remain on the substrate, resulting in poor processing of the substrate due to the generation of reaction products such as watermarks.

An object of the present invention is to provide a substrate drying apparatus capable of reliably removing a liquid from a substrate, a substrate processing apparatus having the same, and a substrate drying method.

(1) A substrate drying apparatus of one embodiment of the present invention is a substrate drying apparatus for performing a substrate drying process, comprising: a substrate rotation support apparatus for rotating a substrate while being supported substantially horizontally, and a rinse on a substrate supported by the substrate rotation support apparatus; A liquid layer forming unit for forming a liquid layer of the liquid, and a gas discharge unit for discharging gas toward the center of the liquid layer of the rinse liquid formed on the substrate by the liquid layer forming unit in a state where the substrate is rotated by the substrate rotation support device. The liquid layer forming unit includes a gas removal unit for removing gas from the rinse liquid, and a rinse liquid supply unit for supplying a rinse liquid from which gas is removed by the gas removing unit on the substrate.

In this substrate drying apparatus, the substrate is supported substantially horizontally by the substrate rotation support apparatus, and the liquid layer of the rinse liquid is formed on the substrate by the liquid layer forming portion. In this case, the gas contained in the rinse liquid is removed in advance by the gas removing unit, and the rinse liquid is supplied onto the substrate by the rinse liquid supply unit. Therefore, generation of bubbles in the liquid layer formed on the substrate is suppressed.

After formation of the liquid layer, gas is discharged toward the central portion of the liquid layer by the gas discharge portion in a state where the substrate is rotated by the substrate rotation support apparatus. As a result, the tension at the center of the liquid layer disappears, and the liquid layer moves to the outside of the substrate by centrifugal force.

In this case, the liquid layer moves integrally to the outside of the substrate while maintaining the ring shape. In particular, since the generation of bubbles in the liquid layer is suppressed, integral movement of the liquid layer is not prevented. Therefore, the liquid layer is completely removed without any microdroplets remaining on the substrate.

By performing such a process, even if a liquid adheres on a board | substrate, the liquid can be removed from a board | substrate with the liquid layer of a rinse liquid, and a board | substrate can be dried reliably. Therefore, generation of reaction products such as watermarks on the substrate can be prevented. As a result, generation | occurrence | production of the processing defect of a board | substrate can be prevented.

(2) The substrate rotation support apparatus rotates the substrate at a first rotational speed at the time of formation of the liquid layer of the rinse liquid by the liquid layer forming portion, and sets the rotational speed of the substrate after the formation of the liquid layer of the rinse liquid by the liquid layer forming portion. The gas ejection unit may be discharged to the liquid layer of the rinse liquid on the substrate rotating at a third rotational speed higher than the first rotational speed and lower than the second rotational speed.

In this case, when the liquid layer is formed, the substrate is rotated at the first rotational speed by the substrate rotation support device. Thereby, even if the substrate is slightly inclined with respect to the horizontal plane, the liquid layer can be formed uniformly on the substrate.

After the formation of the liquid layer, the rotation speed of the substrate is increased stepwise or continuously by the substrate rotation support apparatus. Thereby, the outward centrifugal force which acts on the periphery of a liquid layer increases. On the other hand, the tension with respect to the centrifugal force acts on the central portion of the liquid layer, and the liquid layer is held on the substrate without scattering outward.

In the process of increasing the rotational speed of the substrate, when the rotational speed of the substrate is higher than the first rotational speed and lower than the second rotational speed, the gas is discharged toward the center of the liquid layer on the substrate by the gas discharge unit. do. As a result, the tension at the center of the liquid layer disappears, and the liquid layer moves to the outside of the substrate by centrifugal force.

Thereby, it can reliably move to the outer side of a board | substrate, maintaining the ring shape, without separating a liquid layer into several area | region. Therefore, formation of the micro droplet on a board | substrate is suppressed, and the liquid layer on a board | substrate can be removed reliably.

(3) The substrate rotation support apparatus includes a fourth rotation speed of the substrate higher than the first rotation speed and lower than the second rotation speed after the formation of the liquid layer of the rinse liquid by the liquid layer forming unit and before the discharge of the gas by the gas discharge unit. The predetermined time may be maintained at the rotational speed.

In this case, the liquid layer expands to the whole area on the substrate, and the liquid layer is stably maintained on the substrate. This ensures that the liquid layer does not scatter to the outside of the substrate before the gas is discharged by the gas discharging unit, and at the time of discharging the gas, the liquid layer is kept in a circular shape without separating the liquid layer into a plurality of regions. It can certainly be moved out of the substrate.

(4) The gas removal section is composed of a gas permeable membrane, and has a gas permeation passage into which the rinse liquid is introduced, a gas accommodation chamber for hermetically receiving the gas permeation passage, and a vacuum suction section for vacuum suction in the gas reception chamber. Also good.

In this case, gas is removed through the gas permeable membrane from the rinse liquid introduced into the gas permeation passage in a state where the inside of the gas chamber is vacuum sucked by the vacuum suction unit. By using the rinse liquid from which the gas was removed in this way, it is possible to prevent bubbles from occurring in the liquid layer formed on the substrate.

(5) A substrate processing apparatus according to another aspect of the present invention is a substrate processing apparatus arranged to be adjacent to an exposure apparatus, the processing unit for processing a substrate, and for exchanging a substrate between the processing unit and the exposure apparatus. At least one of the processing unit and the receiving unit includes a substrate drying apparatus for performing a drying treatment of the substrate, the substrate drying apparatus comprising: a substrate rotation supporting apparatus for rotating while supporting the substrate substantially horizontally; The liquid layer forming unit which forms a liquid layer of the rinse liquid on the substrate supported by the support device, and the gas is directed toward the center of the liquid layer of the rinse liquid formed on the substrate by the liquid layer forming unit while the substrate is rotated by the substrate rotation support device. And a gas discharge unit for discharging, the liquid layer forming unit removes gas from the rinse liquid, and the gas is removed by the gas removal unit. It includes a rinse liquid supply unit for supplying a rinse liquid on the substrate.

In this substrate processing apparatus, a processing is performed on a substrate by a processing unit, and the substrate is transferred from the processing unit to the exposure apparatus by the transfer unit. After the exposure treatment is performed on the substrate by the exposure apparatus, the substrate is transferred from the exposure apparatus to the processing unit by the feed-back unit. Before or after the exposure treatment by the exposure apparatus, the substrate drying apparatus is subjected to drying treatment of the substrate.

In the substrate drying apparatus, the substrate is supported substantially horizontally by the substrate rotation support apparatus, and the liquid layer of the rinse liquid is formed on the substrate by the liquid layer forming portion. In this case, the gas contained in the rinse liquid is removed in advance by the gas removing unit, and the rinse liquid is supplied onto the substrate by the rinse liquid supply unit. Therefore, generation of bubbles in the liquid layer formed on the substrate is suppressed.

After formation of the liquid layer, gas is discharged toward the central portion of the liquid layer by the gas discharge portion in a state where the substrate is rotated by the substrate rotation support apparatus. As a result, the tension at the center of the liquid layer disappears, and the liquid layer moves to the outside of the substrate by centrifugal force.

In this case, the liquid layer moves integrally to the outside of the substrate while maintaining the ring shape. In particular, since the generation of bubbles in the liquid layer is suppressed, integral movement of the liquid layer is not prevented. Therefore, the liquid layer is completely removed without any microdroplets remaining on the substrate.

By performing such a process, even if a liquid adheres on a board | substrate, the liquid can be removed from a board | substrate with the liquid layer of a rinse liquid, and a board | substrate can be dried reliably. Therefore, generation of reaction products such as watermarks on the substrate can be prevented. As a result, generation | occurrence | production of the processing defect of a board | substrate can be prevented.

(6) The substrate drying apparatus may perform the drying treatment of the substrate after the exposure treatment by the exposure apparatus.

In this case, even if the liquid adheres to the substrate in the exposure apparatus, the liquid can be removed from the substrate together with the liquid layer of the rinse liquid. In addition, the substrate can be reliably dried without leaving microdroplets on the substrate. Thereby, generation | occurrence | production of reaction products, such as a watermark, on a board | substrate can be suppressed. As a result, generation | occurrence | production of the processing defect of a board | substrate can be prevented.

(7) The substrate drying apparatus may perform a drying treatment of the substrate before the exposure treatment by the exposure apparatus.

In this case, even if dust or the like adheres on the substrate, they can be removed together with the liquid layer of the rinse liquid. In addition, the substrate can be reliably dried without leaving microdroplets on the substrate. Thereby, generation | occurrence | production of reaction products, such as a watermark, on a board | substrate can be suppressed. As a result, generation | occurrence | production of the processing defect of a board | substrate can be prevented.

(8) The substrate drying apparatus further includes a developer supplying portion for supplying a developer onto a substrate supported by the substrate rotation support apparatus, wherein the liquid layer forming unit washes the developer on the substrate by supplying a rinse solution onto the substrate supported by the substrate rotation support apparatus. After taking out, you may form the liquid layer of a rinse liquid on a board | substrate.

In this case, the developing process can be performed to the board | substrate after exposure by supplying a developing solution on a board | substrate. After the developer of the substrate has been washed off, the substrate can be reliably dried without leaving microdroplets on the substrate. Thereby, generation | occurrence | production of the developing defect resulting from the droplet which remains on a board | substrate can be reliably prevented.

(9) A substrate drying method according to another aspect of the present invention comprises the steps of removing gas from the rinse liquid, and forming a liquid layer of the rinse liquid on the substrate by supplying the rinse liquid from which the gas has been removed onto the substrate; And discharging the gas toward the center of the liquid layer of the rinse liquid formed on the substrate while rotating.

In this substrate drying method, the gas contained in the rinse liquid is removed in advance, and the rinse liquid is supplied onto the substrate to form a liquid layer of the rinse liquid on the substrate. In this case, generation of bubbles in the liquid layer formed on the substrate is suppressed.

After formation of the liquid layer, gas is discharged toward the center of the liquid layer while the substrate is rotated. As a result, the tension at the center of the liquid layer disappears, and the liquid layer moves to the outside of the substrate by centrifugal force.

In this case, the liquid layer moves integrally to the outside of the substrate while maintaining the ring shape. In particular, since the generation of bubbles in the liquid layer is suppressed, integral movement of the liquid layer is not prevented. Therefore, the liquid layer is completely removed without any microdroplets remaining on the substrate.

By performing such a process, even if a liquid adheres on a board | substrate, the liquid can be removed from a board | substrate with the liquid layer of a rinse liquid, and a board | substrate can be dried reliably. Therefore, generation of reaction products such as watermarks on the substrate can be prevented. As a result, generation | occurrence | production of the processing defect of a board | substrate can be prevented.

According to the present invention, the liquid can be reliably removed from the substrate.

1 is a plan view of a substrate processing apparatus according to a first embodiment of the present invention.
Fig. 2 is a schematic side view of the substrate processing apparatus of Fig. 1 seen in the + X direction.
Fig. 3 is a schematic side view of the substrate processing apparatus of Fig. 1 seen in the -X direction.
4 is a schematic side view of the interface block seen from the + Y side;
5 is a view for explaining the configuration of the first and second cleaning / drying processing unit.
Fig. 6 shows the drying treatment of the substrate in stages;
7 is a view for explaining the movement of the rinse liquid during the drying treatment of the substrate.
8 is a time-series representation of the rotational speed of the rotating shaft.
9 is a diagram illustrating an example of a change in the movement of a liquid layer due to bubbles.
10 is a diagram showing a comparison result between the case where the rinse liquid after the degassing treatment is used and the case where the rinse liquid before the degassing treatment is used.
11 is a schematic sectional view illustrating a specific configuration example of a degassing module.
12 is a diagram for explaining the configuration of a developing unit.

EMBODIMENT OF THE INVENTION Hereinafter, the board | substrate drying apparatus which concerns on embodiment of this invention, and the substrate processing apparatus provided with it are demonstrated using drawing. In the following description, the substrate refers to a semiconductor substrate, a liquid crystal display device substrate, a plasma display substrate, a photomask glass substrate, an optical disk substrate, a magnetic disk substrate, a magneto-optical disk substrate, a photomask substrate, and the like. Say.

(1) structure of substrate processing equipment

1 is a plan view of a substrate processing apparatus according to a first embodiment of the present invention. In addition, the arrow which shows the X direction, the Y direction, and the Z direction orthogonal to each other is attached | subjected to FIG. 1 and FIGS. The X direction and the Y direction are orthogonal to each other in the horizontal plane, and the Z direction corresponds to the vertical direction. In addition, in each direction, the direction the arrow points to is + direction, and the opposite direction is-direction. Moreover, the rotation direction centering on a Z direction is made into (theta) direction.

As shown in FIG. 1, the substrate processing apparatus 500 includes an indexer block 9, an anti-reflection film processing block 10, a resist film processing block 11, a development processing block 12, and a resist cover film processing block. (13), the resist cover film removal block 14 and the interface block 15. In addition, the exposure apparatus 16 is disposed adjacent to the interface block 15. In the exposure apparatus 16, the exposure process is performed to the board | substrate W by the liquid immersion method.

Hereinafter, the indexer block 9, the antireflection film processing block 10, the resist film processing block 11, the development processing block 12, the resist cover film processing block 13, the resist cover film removing block 14, and Each of the interface blocks 15 is called a processing block.

The indexer block 9 includes a main controller (control unit) 30, a plurality of carrier mounting tables 40, and an indexer robot IR that control the operation of each processing block. The indexer robot IR is provided with a hand IRH for sending and receiving the substrate W. As shown in FIG.

The anti-reflection film processing block 10 includes the anti-reflection film heat treatment units 100 and 101, the anti-reflection film coating unit 50, and the first center robot CR1. The anti-reflection film coating unit 50 is provided to face the heat treatment units 100 and 101 for the anti-reflection film with the first center robot CR1 interposed therebetween. In the first center robot CRl, hands CRH1 and CR12 for exchanging the substrate W are provided above and below.

Between the indexer block 9 and the anti-reflection film processing block 10, a partition 17 for blocking the atmosphere is provided. The partition 17 is provided with substrate placing portions PASS1 and PASS2 close to the top and bottom to exchange the substrate W between the indexer block 9 and the anti-reflection film processing block 10. The upper substrate placing part PASS1 is used to convey the substrate W from the indexer block 9 to the anti-reflection film processing block 10, and the lower substrate placing part PASS2 reflects the substrate W. It is used when conveying from the processing block 10 for prevention film to the indexer block 9.

In addition, the optical sensor (not shown) which detects the presence or absence of the board | substrate W is provided in board | substrate mounting part PASS1, PASS2. This makes it possible to determine whether or not the substrate W is placed in the substrate placing portions PASS1 and PASS2. The substrate placing parts PASS1 and PASS2 are provided with a plurality of fixed pins. In addition, the said optical sensor and a support pin are similarly provided in the board | substrate mounting part PASS3-PASSl3 mentioned later.

The resist film processing block 11 includes a resist film heat treatment unit 110 and 111, a resist film coating unit 60, and a second center robot CR2. The resist film coating unit 60 is provided to face the heat treatment units 110 and 111 for resist film with the second center robot CR2 therebetween. In the second center robot CR2, hands CRH3 and CRH4 for exchanging the substrate W are provided above and below.

Between the anti-reflection film processing block 10 and the resist film processing block 11, a partition wall 18 for blocking the atmosphere is provided. On the partition wall 18, substrate placing portions PASS3 and PASS4 for transferring the substrate W between the anti-reflection film processing block 10 and the resist film processing block 11 are provided close to each other. do. The upper substrate placing part PASS3 is used to convey the substrate W from the anti-reflection film processing block 10 to the resist film processing block 11, and the lower substrate placing part PASS4 is the substrate W. Is used to transfer the resist film processing block 11 from the resist film processing block 11 to the anti-reflection film processing block 10.

The developing block 12 includes a developing heat treatment unit 120 and 121, a developing unit 70, and a third center robot CR3. The developing unit 70 is provided to face the developing heat treatment units 120 and 121 with the third center robot CR3 interposed therebetween. In the third center robot CR3, hands CRH5 and CRH6 for exchanging the substrate W are provided above and below.

Between the process block 11 for resist film and the development process block 12, the partition 19 for blocking an atmosphere is provided. The partitions 19 are provided with substrate placing portions PASS5 and PASS6 for transferring the substrate W between the resist film processing block 11 and the developing processing block 12 close up and down. The upper substrate placing portion PASS5 is used to convey the substrate W from the resist film processing block 11 to the developing block 12, and the lower substrate placing portion PASS6 develops the substrate W. It is used when conveying from the processing block 12 to the processing block 11 for resist films.

The resist cover film processing block 13 includes a heat treatment unit 130 and 131 for a resist cover film, a coating unit 80 for a resist cover film, and a fourth center robot CR4. The resist coating film coating unit 80 is provided to face the heat treatment sections 130 and 131 for the resist cover film with the fourth center robot CR4 therebetween. In the fourth center robot CR4, hands CRH7 and CRH8 for exchanging the substrate W are provided above and below.

Between the developing block 12 and the resist cover film processing block 13, a partition 20 for blocking the atmosphere is provided. The partition wall 20 is provided with substrate placing portions PASS7 and PASS8 for transferring the substrate W between the developing block 12 and the resist cover film processing block 13 close up and down. . The upper substrate placing portion PASS7 is used to convey the substrate W from the developing block 12 to the processing block 13 for resist cover film, and the lower substrate placing portion PASS8 carries the substrate W away. It is used when conveying from the processing block 13 for resist cover films to the developing processing block 12.

The resist cover film removing block 14 includes a post-exposure baking heat treatment unit 140 and 141, a resist cover film removing process unit 90, and a fifth center robot CR5. The post-exposure bake heat treatment unit 141 is adjacent to the interface block 15 and includes substrate placing units PASS11 and PASS12 as described later. The resist cover film removing processing unit 90 is provided to face the post-exposure baking heat treatment units 140 and 141 with the fifth center robot CR5 therebetween. In the fifth center robot CR5, hands CRH9 and CRH10 for exchanging the substrate W are provided above and below.

Between the process block 13 for resist cover film and the resist cover film removal block 14, a partition 21 for blocking the atmosphere is provided. In the partition wall 21, substrate placing portions PASS9 and PASS10 for exchanging the substrate W between the resist cover film processing block 13 and the resist cover film removal block 14 are located close to each other. Is installed. The upper substrate placing portion PASS9 is used to convey the substrate W from the resist cover film processing block 13 to the resist cover film removing block 14, and the lower substrate placing portion PASSlO is the substrate W. ) Is used to transfer the resist cover film removal block 14 to the resist cover film processing block 13.

The interface block 15 includes a sending buffer unit (SBF), a first cleaning / drying processing unit (SD1), a sixth center robot (CR6), an edge exposure unit (EEW), and a return buffer unit. (RBF), mounting and cooling unit (PASS-CP) (hereinafter abbreviated as P-CP), substrate placing unit (PASS13), interface transfer mechanism (IFR) and second cleaning / drying processing unit ( SD2). Further, the first cleaning / drying processing unit SD1 performs cleaning and drying treatment of the substrate W before the exposure treatment, and the second cleaning / drying processing unit SD2 cleans and drys the substrate W after the exposure treatment. The process is performed. Details of the first and second cleaning / drying processing units SD1 and SD2 will be described later.

The sixth center robot CR6 has hands CRH11 and CRH12 (see Fig. 4) for transferring the substrate W up and down, and the substrate W is provided in the interface transfer mechanism IFR. Hands H1 and H2 (see Fig. 4) for giving and receiving are installed above and below. Details of the interface block 15 will be described later.

In the substrate processing apparatus 500 according to the present embodiment, the indexer block 9, the anti-reflection film processing block 10, the resist film processing block 11, the development processing block 12, and the resist cover along the Y direction. The film processing block 13, the resist cover film removing block 14, and the interface block 15 are arranged in order.

2 is a schematic side view of the substrate processing apparatus 500 of FIG. 1 seen in the + X direction, and FIG. 3 is a schematic side view of the substrate processing apparatus 500 of FIG. 1 viewed in the -X direction. In addition, in FIG. 2, what is mainly provided in the + X side of the substrate processing apparatus 500 is shown, and in FIG. 3, what is mainly installed in the -X side of the substrate processing apparatus 500 is shown.

First, the structure of the + X side of the substrate processing apparatus 500 is demonstrated using FIG. As shown in FIG. 2, three coating units BARC are laminated | stacked up and down in the anti-reflective coating application part 50 (refer FIG. 1) of the anti-reflective coating process block 10. As shown in FIG. Each coating unit BARC supplies the coating liquid of the antireflection film to the spin chuck 51 and the substrate W supported on the spin chuck 51, which rotate and adsorb and support the substrate W in a horizontal position. A supply nozzle 52 is provided.

Three coating units RES are stacked on top of each other in the resist film coating unit 60 (see FIG. 1) of the resist film processing block 11. Each coating unit RES is supplied to a spin chuck 61 which rotates by adsorbing and supporting the substrate W in a horizontal position, and a supply nozzle 62 for supplying a coating liquid of a resist film to the substrate W supported on the spin chuck 61. ).

In the developing processing unit 70 of the developing processing block 12, five developing processing units DEV are stacked up and down. Each developing unit DEV includes a spin chuck 71 which rotates by adsorbing and supporting the substrate W in a horizontal position, and a supply nozzle 72 which supplies a developer solution to the substrate W supported on the spin chuck 71. Equipped.

Three coating units COV are stacked on top of each other in the resist processing film coating unit 80 of the resist cover film processing block 13. Each coating unit COV has a supply nozzle for supplying a coating liquid of a resist cover film to the spin chuck 81 which rotates by adsorbing and supporting the substrate W in a horizontal position and the substrate W supported on the spin chuck 81 ( 82). As a coating liquid of a resist cover film, the material (material with low reactivity with a resist and water) with low affinity with a resist and water can be used. For example, it is a fluororesin. The coating unit COV forms a resist cover film on the resist film formed on the substrate W by applying the coating liquid onto the substrate W while rotating the substrate W. FIG.

In the resist cover film removal processing unit 90 of the resist cover film removal block 14, three removal units REM are stacked up and down. Each removal unit REM applies a stripping solution (e.g., fluorine resin) to the spin chuck 91 which rotates by adsorbing and supporting the substrate W in a horizontal position and the substrate W supported on the spin chuck 91. A supply nozzle 92 for supplying is provided. The removal unit REM removes the resist cover film formed on the substrate W by applying a stripping solution on the substrate W while rotating the substrate W. As shown in FIG.

In addition, the removal method of the resist cover film in the removal unit REM is not limited to the said example. For example, the resist cover film may be removed by supplying a peeling liquid onto the substrate W while moving a slit nozzle above the substrate W. FIG.

On the + X side in the interface block 15, the edge exposure portion EEW and the three second cleaning / drying processing units SD2 are stacked up and down. Each of the edge exposure units EEW rotates and spins the spin chuck 98 that supports and adsorbs the substrate W in a horizontal position, and the light irradiator 99 that exposes the periphery of the substrate W supported on the spin chuck 98. Equipped.

Next, the structure of the -X side of the substrate processing apparatus 500 is demonstrated using FIG. As shown in Fig. 3, the antireflection film heat treatment parts 100 and 101 of the antireflection film processing block 10 include two heating units (hot plates) HP and two cooling units (cooling). CPs are arranged in a stack. Further, in the heat treatment parts 100 and 101 for the antireflection film, local controllers LC for controlling the temperatures of the heating unit HP and the cooling unit CP are disposed at the top.

In the resist film heat treatment parts 110 and 111 of the resist film processing block 11, two heating units HP and two cooling units CP are stacked and arranged. Further, in the heat treatment parts 110 and 111 for resist films, local controllers LC for controlling the temperatures of the heating unit HP and the cooling unit CP are arranged at the top.

In the developing heat treatment parts 120 and 121 of the developing block 12, two heating units HP and two cooling units CP are stacked and arranged. In the developing heat treatment parts 120 and 121, local controllers LC for controlling the temperatures of the heating unit HP and the cooling unit CP are disposed at the top.

In the heat treatment parts 130 and 131 for the resist cover film processing block 13, two heating units HP and two cooling units CP are stacked and arranged. Further, in the heat treatment parts 130 and 131 for the resist cover film, a local controller LC for controlling the temperature of the heating unit HP and the cooling unit CP is disposed at the top.

In the post-exposure bake heat treatment part 140 of the resist cover film removal block 14, two heating units HP and two cooling units CP are stacked up and down, and the post-exposure bake heat treatment part 141 is disposed. ), Two heating units HP, two cooling units CP, and substrate placing portions PASS11, PASS12 are stacked up and down. In the post-exposure bake heat treatment units 140 and 141, local controllers LC for controlling the temperatures of the heating unit HP and the cooling unit CP are arranged at the top.

Next, the interface block 15 will be described in detail with reference to FIG.

4 is a schematic side view of the interface block 15 seen from the + Y side. As shown in FIG. 4, in the interface block 15, the transfer buffer part SBF and three 1st washing | cleaning / drying processing unit SD1 are laminated | stacked on the -X side. In the interface block 15, an edge exposure unit EEW is disposed above the + X side.

Below the edge exposure portion EEW, a feedback buffer portion RBF, two mounting and cooling units P-CP, and a substrate placing portion PASS13 are stacked up and down substantially in the center portion of the interface block 15. Is placed. Below the edge exposure portion EEW, three second cleaning / drying processing units SD2 are stacked up and down on the + X side in the interface block 15.

In addition, a sixth center robot CR6 and an interface conveyance mechanism IFR are provided below the interface block 15. The sixth center robot CR6 includes the transfer buffer unit SBF and the first cleaning / drying processing unit SD1, the edge exposure unit EEW, the return buffer unit RBF, and the mounting and cooling unit P-CP. And the substrate placing part PASS13, which is movable up and down and rotatable. The interface transfer mechanism (IFR) is capable of moving between the return buffer section (RBF), the mounting and cooling unit (P-CP) and the substrate placing section (PASS13), and the second cleaning / drying processing unit (SD2) while being rotated. It is possibly installed.

(2) operation of substrate processing equipment

Next, the operation of the substrate processing apparatus 500 according to the present embodiment will be described with reference to FIGS. 1 to 4.

(2-1) Operation of Indexer Block to Resist Cover Film Removal Block

First, the operation of the indexer block 9 to resist cover film removal block 14 will be briefly described.

On the carrier mounting base 40 of the indexer block 9, the carrier C which accommodates several board | substrate W in multiple steps is carried in. The indexer robot IR takes out the unprocessed board | substrate W accommodated in the carrier C using the hand IRH. Thereafter, the indexer robot IR is rotated in the ± θ direction while moving in the ± X direction, and the unprocessed substrate W is placed on the substrate placing part PASS1.

In this embodiment, although front opening unified pod (FOUP) is employ | adopted as carrier C, it is not limited to this, Outside air | atmosphere SMIF (Standard Mechanical Inter Face) pod and storage board | substrate W You may use an OC (open cassette) etc. which expose to i).

In addition, the indexer robot IR, the first to sixth center robots CR1 to CR6, and the interface conveyance mechanism IFR, respectively, linearly slide linearly with respect to the substrate W to perform the hand retraction operation. Although a linear transfer robot is used, it is not limited to this, but a multi-joint transfer robot that linearly moves the hand by moving the joint may be used.

The untreated substrate W placed on the substrate placing unit PASS1 is received by the first center robot CR1 of the anti-reflection film processing block 10. The first center robot CRl carries the substrate W into the heat treatment parts 100 and 101 for the antireflection film.

Thereafter, the first center robot CRl takes out the heat-treated substrate W from the anti-reflection film heat treatment units 100 and 101, and carries the substrate W into the anti-reflection film coating unit 50. In this antireflection coating treatment unit 50, an antireflection film is formed on the substrate W by a coating unit BARC in order to reduce standing waves and halation occurring during exposure. do.

Next, the first center robot CR1 takes out the coated substrate W from the antireflective coating treatment unit 50 and carries the substrate W into the antireflective coating heat treatment units 100 and 101. . After that, the first center robot CR1 takes out the heat-treated substrate W from the anti-reflection film heat treatment units 100 and 101, and places the substrate W on the substrate placing unit PASS3.

The substrate W mounted on the substrate placing unit PASS3 is received by the second center robot CR2 of the processing block 11 for resist film. The second center robot CR2 carries the substrate W into the heat treatment parts 110 and 111 for the resist film.

Thereafter, the second center robot CR2 takes out the heat-treated substrate W from the heat treatment units 110 and 111 for the resist film, and carries the substrate W into the coating film 60 for the resist film. In the resist film coating processing section 60, a resist film is applied and formed on the substrate W on which the antireflection film is applied by the coating unit RES.

Next, the second center robot CR2 takes out the coated substrate W from the resist film coating unit 60 and carries the substrate W into the resist film heat treatment units 110 and 111. Thereafter, the second center robot CR2 takes out the heat-treated substrate W from the heat treatment units 110 and 111 for the resist film, and places the substrate W on the substrate placing unit PASS5.

The substrate W mounted on the substrate placing unit PASS5 is received by the third center robot CR3 of the developing block 12. The third center robot CR3 mounts the substrate W on the substrate placing part PASS7.

The substrate W placed on the substrate placing part PASS7 is received by the fourth center robot CR4 of the processing block 13 for resist cover film. The fourth center robot CR4 carries the substrate W into the coating unit 80 for a resist cover film. In the resist cover film coating processing section 80, a resist cover film is coated and formed on the substrate W on which the resist film is coated by the coating unit COV.

Next, the fourth center robot CR4 takes out the coated substrate W from the resist cover film coating processing unit 80 and carries the substrate W into the heat treatment sections 130 and 131 for the resist cover film. . Thereafter, the fourth center robot CR4 takes out the heat-treated substrate W from the heat treatment portions 130 and 131 for the resist cover film, and mounts the substrate W on the substrate placing portion PASS9.

The substrate W placed on the substrate placing unit PASS9 is received by the fifth center robot CR5 of the resist cover film removing block 14. The fifth center robot CR5 mounts the substrate W on the substrate placing part PASS11.

The substrate W placed on the substrate placing unit PASS11 is received by the sixth center robot CR6 of the interface block 15, and is prescribed by the interface block 15 and the exposure apparatus 16 as described later. Processing is carried out. After predetermined processing is performed on the substrate W in the interface block 15 and the exposure apparatus 16, the substrate W is exposed by the sixth center robot CR6 to expose the resist cover film removing block 14. After the baking is carried into the heat treatment unit 141.

In the post-exposure bake heat treatment unit 141, post-exposure bake (PEB) is performed on the substrate (W). Thereafter, the sixth center robot CR6 takes the substrate W out of the post-exposure bake heat treatment unit 141 and places the substrate W on the substrate placing unit PASS12.

In addition, in this embodiment, although the post-exposure baking is performed by the post-exposure baking heat processing part 141, you may perform post-exposure baking with the post-exposure baking heat processing part 140. FIG.

The substrate W mounted on the substrate placing unit PASS12 is received by the fifth center robot CR5 of the resist cover film removing block 14. The fifth center robot CR5 carries the substrate W into the resist cover film removing processing unit 90. In the resist cover film removal processing unit 90, the resist cover film is removed.

Next, the fifth center robot CR5 takes out the processed substrate W from the resist cover film removal processing unit 90 and places the substrate W on the substrate placing unit PASS10.

The substrate W mounted on the substrate placing portion PASS10 is placed on the substrate placing portion PASS8 by the fourth center robot CR4 of the processing block 13 for resist cover film.

The substrate W mounted on the substrate placing unit PASS8 is received by the third center robot CR3 of the developing block 12. The third center robot CR3 carries the substrate W into the developing unit 70. In the development processing unit 70, development processing is performed on the exposed substrate W. FIG.

Next, the third center robot CR3 takes out the developing substrate W from the developing processing unit 70 and carries the substrate W into the developing heat treatment units 120 and 121. Thereafter, the third center robot CR3 takes out the substrate W after the heat treatment from the developing heat treatment sections 120 and 121, and mounts the substrate W on the substrate placing section PASS6.

The substrate W placed on the substrate placing portion PASS6 is placed on the substrate placing portion PASS4 by the second center robot CR2 of the resist film processing block 11. The substrate W mounted on the substrate placing part PASS4 is placed on the substrate placing part PASS2 by the first center robot CR1 of the anti-reflection film processing block 10.

The substrate W mounted on the substrate placing unit PASS2 is accommodated in the carrier C by the indexer robot IR of the indexer block 9. Thereby, each process of the board | substrate W in the substrate processing apparatus 500 is complete | finished.

(2-2) Operation of the interface block

Next, the operation of the interface block 15 will be described in detail.

As described above, the substrate W loaded into the indexer block 9 is placed on the substrate placing portion PASS11 of the resist cover film removing block 14 (Fig. 1) after a predetermined process is performed.

The substrate W placed on the substrate placing unit PASS11 is received by the sixth center robot CR6 of the interface block 15. The sixth center robot CR6 carries the substrate W into the edge exposure portion EEW (Fig. 4). In this edge exposure part EEW, an exposure process is performed to the periphery of the board | substrate W. As shown in FIG.

Next, the sixth center robot CR6 takes out the edge exposed substrate W from the edge exposure portion EEW, and carries the substrate W into either of the first cleaning / drying processing units SD1. . In the first cleaning / drying processing unit SD1, the cleaning and drying treatment of the substrate W before the exposure treatment are performed as described above.

Here, the time of exposure processing by the exposure apparatus 16 is usually longer than other processing steps and conveyance steps. As a result, the exposure apparatus 16 may not be able to accept the subsequent board | substrate W in many cases. In this case, the substrate W is temporarily stored in the transfer buffer portion SBF (Fig. 4). In the present embodiment, the sixth center robot CR6 takes out the cleaned and dried substrate W from the first cleaning / drying processing unit SD1 and transfers the substrate W to the transfer buffer portion SBF. Return.

Next, the 6th center robot CR6 takes out the board | substrate W accommodated in the transfer buffer part SBF, and carries in the board | substrate W to a mounting and cooling unit P-CP. The substrate W carried in the placing and cooling unit P-CP is maintained at the same temperature (eg, 23 ° C.) in the exposure apparatus 16.

When the exposure apparatus 16 has a sufficient processing speed, the placement and cooling unit P is removed from the first cleaning / drying processing unit SD1 without storing and storing the substrate W in the transfer buffer portion SBF. You may convey the board | substrate W by -CP).

Subsequently, the substrate W held at the predetermined temperature in the placing and cooling unit P-CP is received by the hand H1 (FIG. 4) on the upper side of the interface transfer mechanism IFR, and the exposure apparatus 16. Carry-in is carried in to the board | substrate carrying-in part 16a (FIG. 1).

In the exposure apparatus 16, the substrate W subjected to the exposure treatment is carried out from the substrate carrying out portion 16b (FIG. 1) by the hand H2 (FIG. 4) below the interface transfer mechanism IFR. . The interface conveyance mechanism IFR carries the board | substrate W to either side of the 2nd washing | cleaning / drying processing unit SD2 by the hand H2. In the second cleaning / drying processing unit SD2, the cleaning and drying processing of the substrate W after the exposure processing is performed as described above.

In the second cleaning / drying processing unit SD2, the substrate W subjected to the cleaning and drying treatment is taken out by the hand H1 (FIG. 4) of the interface transfer mechanism IFR. The interface conveyance mechanism IFR mounts the board | substrate W on board | substrate mounting part PASS13 by the hand H1.

The substrate W placed on the substrate placing unit PASS13 is received by the sixth center robot CR6. 6th center robot CR6 conveys the board | substrate W to the post-exposure baking heat processing part 141 of the resist cover film removal block 14 (FIG. 1).

In addition, when the resist cover film removal block 14 cannot temporarily receive the substrate W due to a failure of the removal unit REM (FIG. 2), the substrate W after the exposure process to the return buffer portion RBF. ) Can be temporarily stored and stored.

(3) cleaning / drying processing unit

Next, the first and second cleaning / drying processing units SD1 and SD2 will be described in detail. The configurations of the first and second cleaning / drying processing units SD1 and SD2 are the same.

(3-1) Configuration

5 is a view for explaining the configuration of the first and second cleaning / drying processing units SD1 and SD2. As shown in FIG. 5, the first and second cleaning / drying processing units SD1 and SD2 support the substrate W horizontally, and the substrate is wound around a vertical rotation axis passing through the center of the substrate W. As shown in FIG. A spin chuck 621 for rotating (W) is provided.

The spin chuck 621 is fixed to the upper end of the rotation shaft 625 rotated by the chuck rotation drive mechanism 636. In addition, an intake path (not shown) is formed in the spin chuck 621, and the substrate W is evacuated by the intake air in a state where the substrate W is placed on the spin chuck 621. ), The lower surface of the substrate) may be vacuum-adsorbed to the spin chuck 621 to support the substrate W in a horizontal position.

The cleaning liquid supply nozzle 650, the rinse liquid supply nozzle 660, and the inert gas supply nozzle 670 are provided to be movable between the upper position and the outer position of the substrate W supported by the spin chuck 621. . The cleaning liquid supply nozzle 650, the rinse liquid supply nozzle 660, and the inert gas supply nozzle 670 are independently driven by a nozzle driving mechanism (not shown).

The cleaning liquid supply nozzle 650 is connected to the cleaning liquid supply source R1 through the cleaning liquid supply pipe 651. The valve Va is inserted in the cleaning liquid supply pipe 651. The cleaning liquid is supplied to the cleaning liquid supply nozzle 650 from the cleaning liquid supply source R1 by opening the valve Va. As the cleaning liquid, for example, a liquid obtained by dissolving a complex (ionized) in pure water or pure water or a fluorine chemical liquid is used.

The rinse liquid supply nozzle 660 is connected to the degassing module DM through the rinse liquid supply pipe 661a. In addition, the degassing module DM is connected to the rinse liquid supply source R2 through the rinse liquid supply pipe 661b. The valve Vb is inserted between the rinse liquid supply pipes 661b. By opening the valve Vb, the rinse liquid is supplied from the washing liquid supply source R1 to the degassing module DM. In the degassing module DM, a process for removing gas dissolved in the rinse liquid (hereinafter referred to as degassing treatment) is performed. The rinse liquid after the degassing treatment is supplied to the rinse liquid supply nozzle 660. The specific configuration of the degassing module DM will be described later. In this embodiment, pure water is used as a rinse liquid.

The inert gas supply nozzle 670 is connected to the inert gas supply source R3 through the inert gas supply pipe 671. The valve Vc is inserted between the inert gas supply pipes 671. The inert gas is supplied from the inert gas supply source R3 to the inert gas supply nozzle 670 by opening the valve Vc. As an inert gas, nitrogen gas is used, for example. In addition, you may use other gas, such as air (air), instead of an inert gas.

The substrate W supported by the spin chuck 621 is accommodated in a processing cup 623. Inside the processing cup 623, a cylindrical partition wall 633 is provided. In addition, a drainage space 631 is formed to drain the processing liquid (cleaning liquid or rinse liquid) used for processing the substrate W so as to surround the spin chuck 621. A recovery liquid space 632 for recovering the processing liquid used for the processing of the substrate W is formed between the processing cup 623 and the partition wall 633 so as to surround the drainage space 631.

A drainage pipe 634 is connected to the drainage space 631 for guiding the processing liquid to a drainage processing apparatus (not shown), and the processing liquid is guided to a recovery processing apparatus (not shown) in the recovery liquid space 632. A recovery pipe 635 for the purpose of connection is connected.

A guard 624 is provided above the processing cup 623 to prevent the processing liquid from the substrate W from scattering outward. The guard 624 has a shape that is rotationally symmetric about the rotation axis 625. On the inner surface of the upper end of the guard 624, a drain guide groove 641 having a cross-section? Is formed in a ring shape.

In addition, a recovery liquid guide portion 642 is formed on the inner surface of the lower end of the guard 624, which is formed of an inclined surface that is inclined outwardly downward. In the vicinity of the upper end of the recovery liquid guide part 642, a partition wall storage groove 643 for receiving the partition wall 633 of the processing cup 623 is formed.

This guard 624 is provided with a guard lift drive mechanism (not shown) composed of a ball screw mechanism or the like. The guard lifting and driving mechanism includes a guard 624, a recovery position in which the recovery liquid guide portion 642 faces an outer circumferential end surface of the substrate W supported by the spin chuck 621, and the drainage guide groove 641. It is made to move between the drainage positions which oppose the outer peripheral cross section of the board | substrate W supported by the spin chuck 621. FIG. When the guard 624 is at the recovery position (the position of the guard shown in FIG. 5), the processing liquid scattered outward from the substrate W is guided to the recovery liquid space 632 by the recovery liquid guide part 642. It is recovered through the recovery pipe 635. On the other hand, when the guard 624 is in the drainage position, the processing liquid scattered outward from the substrate W is guided to the drainage space 631 by the drainage guide groove 641 and drained through the drainage tube 634. do. With the above configuration, the processing liquid is drained and collected.

(3-2) operation

Next, the processing operation of the first and second cleaning / drying processing units SD1 and SD2 having the above configuration will be described. In addition, the operation of each component of the first and second cleaning / drying processing units SD1 and SD2 described below is controlled by the main controller (control unit) 30 in FIG.

First, at the time of carrying in the board | substrate W, the guard 624 falls and the 6th center robot CR6 or the interface conveyance mechanism IFR of FIG. 1 spin-chucks 621 the board | substrate W. FIG. Wit on The substrate W mounted on the spin chuck 621 is adsorbed and supported by the spin chuck 621.

Next, the guard 624 moves to the above-mentioned drainage position, and the cleaning liquid supply nozzle 650 moves above the center of the substrate W. As shown in FIG. Thereafter, the rotation shaft 625 rotates, and the substrate W supported by the spin chuck 621 rotates according to the rotation. Thereafter, the cleaning liquid is discharged from the cleaning liquid supply nozzle 650 to the upper surface of the substrate W. As shown in FIG. Thereby, washing | cleaning of the board | substrate W is performed.

In the first cleaning / drying processing unit SD1, the components of the resist cover film on the substrate W are eluted into the cleaning liquid during this cleaning. In the cleaning of the substrate W, the cleaning liquid is supplied onto the substrate W while the substrate W is rotated. In this case, the cleaning liquid on the substrate W always moves to and scatters around the periphery of the substrate W by centrifugal force. Therefore, it is possible to prevent the components of the resist cover film eluted into the cleaning liquid from remaining on the substrate W. FIG.

In addition, the components of the resist cover film may be eluted by, for example, holding pure water on the substrate W and holding it for a predetermined time. In addition, you may supply the cleaning liquid on the board | substrate W by the soft spray method using a two-fluid nozzle.

After a predetermined time elapses, the supply of the cleaning liquid is stopped and the cleaning liquid supply nozzle 650 is evacuated. Subsequently, the rinse liquid supply nozzle 660 moves above the center of the substrate W to discharge the rinse liquid onto the upper surface of the substrate W. As shown in FIG. As a result, the cleaning liquid on the substrate W is washed. Thereafter, the drying treatment of the substrate W is performed. The detail of the drying process of the board | substrate W is mentioned later.

Thereafter, the rotation of the rotation shaft 625 stops, and the guard 624 descends. Then, the sixth center robot CR6 or the interface transfer mechanism IFR of FIG. 1 carries the substrate W out. As a result, the processing operation in the first and second cleaning / drying processing units SD1 and SD2 ends. In addition, it is preferable to change the position of the guard 624 in washing | cleaning and drying process suitably according to the need of collection | recovery or drainage of a process liquid.

In addition, in the said embodiment, although the washing | cleaning liquid is supplied by the washing | cleaning liquid supply nozzle 650 and the rinse liquid is supplied by the rinse liquid supply nozzle 660, the common nozzle which can supply both a washing | cleaning liquid and a rinse liquid is supplied. You can also use As the cleaning liquid supply nozzle 650 and the rinse liquid supply nozzle 660, various nozzles such as a straight nozzle or a slit nozzle can be used.

In addition, when the contamination of the substrate W is slight, it is not necessary to perform the cleaning using the cleaning liquid. In this case, contaminants on the substrate W can be sufficiently removed by performing a drying treatment using a rinse liquid as shown below.

(3-3) Details of substrate drying

Hereinafter, the drying process of the board | substrate W in the 1st and 2nd washing | cleaning / drying processing units SD1 and SD2 is demonstrated in detail.

Usually, when drying the board | substrate W using centrifugal force, microdroplets of a rinse liquid tend to remain on the board | substrate W. This is because only a small centrifugal force corresponding to the mass acts on the microdroplets, so that it is difficult to separate them from the substrate W. In addition, when minute droplets are attached near the center of the substrate W, the centrifugal force acting on the droplets becomes smaller, which makes it more difficult to remove them. When the hydrophobicity of the resist cover film on the substrate W is high, such droplets are particularly likely to be formed.

In the present embodiment, the remaining of the minute droplets is prevented and the rinse liquid on the substrate W can be reliably removed.

Hereinafter, details will be described with reference to FIGS. 6 to 9.

FIG. 6 is a diagram showing the drying process of the substrate W step by step, and FIG. 7 is a diagram for explaining the movement of the rinse liquid during the drying process of the substrate W. FIG. 8 is a view showing the rotation speed of the rotation shaft 625 in time series.

As described above, after the cleaning treatment of the substrate W, the cleaning liquid on the substrate W is washed with the rinse liquid. Thereafter, the rotation speed of the rotation shaft 625 (Fig. 5) is lowered. As a result, the amount of the rinse liquid shaken off by the rotation of the substrate W is reduced, and as shown in FIG. 6A, the liquid layer L of the rinse liquid is formed on the entire surface of the substrate W. As shown in FIG. . In addition, after the supply of the rinse liquid and the rotation of the rotation shaft 625 are once stopped, the rotation shaft 625 may be rotated again at a low rotation speed to form the liquid layer L on the substrate W, or the rotation shaft 625. You may form the liquid layer L on the board | substrate W in the state which stopped rotation of this.

Next, the supply of the rinse liquid is stopped, the rinse liquid supply nozzle 660 is retracted, and then the rotational speed of the rotary shaft 625 increases. In this case, the centrifugal force acting on the central part of the liquid layer L is smaller than the centrifugal force acting on the periphery. Therefore, a tension corresponding to the centrifugal force acting on the periphery of the liquid layer L acts. Thereby, the liquid layer L is held on the substrate without scattering outward. As the centrifugal force is slightly larger than the tension due to the increase in the rotational speed, the liquid layer L is formed on the substrate W in a state where the thickness of the peripheral portion becomes thick and the thickness of the central portion becomes thinner, as shown in Fig. 6 (b). maintain.

Next, the inert gas supply nozzle 670 moves above the center of the substrate W, and as shown in FIG. 6C, the inert gas is directed from the inert gas supply nozzle 670 toward the center of the liquid layer L. FIG. Is discharged, and the hole H is formed in the center part of the liquid layer L. FIG. As a result, the tension corresponding to the centrifugal force acting on the periphery of the liquid layer L disappears. In addition, the rotational speed of the rotating shaft 625 further increases with the discharge of the inert gas. Thereby, the liquid layer L moves toward the outer side of the board | substrate W, as shown to FIG. 6 (d) and FIG. 6 (e).

At this time, the liquid layer L is not separated into a plurality of regions, as shown in FIGS. 7A to 7C, and the substrate L is integrally held in a state where the ring shape is maintained by the surface tension. Move out of W). Thereby, formation of the micro droplet of a rinse liquid is suppressed, and the liquid on the board | substrate W can be removed.

Next, the rotation speed of the rotating shaft 625 at the time of the drying process of the board | substrate W is demonstrated in detail.

As shown in FIG. 8, in the period T1, the rotation shaft 625 is rotated at the rotation speed S1. The rotation speed S1 is 10 rpm, for example. In this period T1, the rinse liquid is supplied onto the substrate W. As shown in FIG. In this case, even if the substrate W is slightly inclined with respect to the horizontal plane, the liquid layer L can be formed uniformly on the substrate W. FIG. In addition, as long as the liquid layer L can be formed uniformly over the whole area | region on the board | substrate W, you may stop rotation of the rotating shaft 625 in period T1.

Next, in the period T2, the rotation shaft 625 is rotated at a rotation speed S2 higher than the rotation speed S1. Rotational speed S2 is 10-100 rpm, for example. Thereby, the liquid layer L extends over the entire area on the substrate W and is held on the substrate W by surface tension.

Next, in the period T3, the rotation shaft 625 is rotated at a rotation speed S3 higher than the rotation speed S2. Rotational speed S3 is 200-1000 rpm, for example. When transitioning from the period T2 to the period T3, the inert gas is discharged to the substrate W. As shown in FIG. In this case, the liquid layer L can be integrally moved to the outside of the substrate W while maintaining the ring shape.

The discharge timing of the inert gas may be immediately before the transition from the period T2 to the period T3 or immediately after the transition to the period T3. The discharge time of the inert gas is, for example, 0.5 to 8 sec. That is, the inert gas may be discharged only for a short time as long as the hole H (Fig. 6) is formed in the liquid layer L, or the inert gas is continuously discharged until the liquid layer L is removed from the substrate W. It may be.

The rotation speed of the rotation shaft 625 may be appropriately changed depending on the hydrophobicity of the resist cover film on the substrate W, the wettability of the rinse liquid (for example, the contact angle), and the like. For example, when the hydrophobicity of the resist cover film is high, since the liquid layer L is separated into a plurality of regions, droplets are easily formed, it is preferable to set the rotation speed of the rotation shaft 625 lower.

In addition, in this embodiment, as shown in FIG. 8, although the rotation speed of the rotating shaft 625 raises to three steps of rotation speed S1, S2, S3, it is not limited to this, Even if it raises to two or four steps or more, It may be good or it may rise continuously instead of stepwise.

(3-4) Bubbles contained in the liquid layer

At the time of the said drying process, if bubble is contained in the liquid layer L formed on the board | substrate W, the movement of the liquid layer L toward the outer side of the board | substrate W may change by the bubble. 9 is a diagram illustrating an example of a change in the movement of the liquid layer L due to bubbles.

As shown in FIG.9 (a)-FIG.9 (c), when bubble is contained in liquid layer L, when the thickness of the vicinity of the center part of liquid layer L became thin by centrifugal force, it shifted from the center part of liquid layer L. FIG. Bubbles may rupture at the position, and a hole Ha may be formed. In this case, the tension of the liquid layer L disappears from the hole Ha, and the liquid layer L moves toward the outside of the substrate W with the hole Ha as the starting point.

In this case, since the centrifugal force applied to the liquid layer L is not symmetric about the hole Ha, the liquid layer L is not maintained in the ring shape. Therefore, the liquid layer L separates and the droplet remains on the board | substrate W. FIG.

In addition, the hole Ha may be formed simultaneously with the hole H by discharge of an inert gas. Alternatively, a plurality of holes Ha may be formed at the same time. Even in these cases, the liquid layer L is not held in a ring shape. Therefore, the liquid layer L separates, and droplets tend to remain on the substrate W. FIG.

If droplets remain on the substrate W, reaction products such as watermarks are generated on the substrate W, which causes development defects.

Therefore, in this embodiment, the degassing process of the rinse liquid is performed by the degassing module DM. In this case, generation of bubbles in the liquid layer L can be suppressed. As a result, the formation of the holes Ha due to the bursting of the bubbles can be prevented, and the liquid layer L can be reliably moved to the outside of the substrate W while maintaining the ring shape without separating the liquid layer L into a plurality of regions. Can be. Therefore, residual liquid droplets on the substrate W can be prevented. As a result, generation of reaction products such as watermarks can be suppressed.

10 shows a comparison result between the case where the rinse liquid after the degassing treatment is used and the case where the rinse liquid before the degassing treatment is used. Here, the number of watermarks generated on the substrate W after the comparison of the oxygen concentration in the rinse liquid and the drying treatment was performed.

As shown in FIG. 10, the oxygen concentration in the rinse liquid before degassing was 4.0 mg / L. As a result of the above drying treatment using the rinse liquid, about 500 watermarks were generated on the substrate W. As shown in FIG. On the other hand, the oxygen concentration in the rinse liquid after the degassing treatment was 1.7 mg / L. As a result of the above drying treatment using the rinse liquid, only about 60 watermarks were generated on the substrate W. FIG.

As described above, it was found that the number of reaction products generated on the substrate W was greatly reduced by performing the drying treatment using the rinse liquid subjected to the degassing treatment.

(3-5) Composition of degassing module

11 is a schematic cross-sectional view showing a specific configuration example of the degassing module DM. The degassing module DM shown in FIG. 11 includes joint portions 701 and 702, a liquid flow passage 703, and a vacuum chamber 704.

A joint 701 is mounted at one end of the vacuum chamber 704 and a joint 702 is mounted at the other end. The interior of the vacuum chamber 704 is hermetically sealed. In the vacuum chamber 704, one end of the liquid passage 703 is connected to the joint 701, and the other end of the liquid passage 703 is connected to the joint 702. The liquid passage 703 is composed of a plurality of thin tubes made of hollow fiber membranes.

Outside the vacuum chamber 704, a rinse liquid supply pipe 661b is connected to the joint 701, and a rinse liquid supply pipe 661a is connected to the joint 702. The rinse liquid flows into the liquid passage 703 from the rinse liquid supply pipe 661a through the joint 701 and flows out into the rinse liquid supply pipe 661b through the joint 702.

The vacuum chamber 704 is connected to the vacuum suction source 706 through the degassing piping 705. Vacuum suction source 706 is, for example, a vacuum line in a factory. By the vacuum suction source 706, vacuum suction in the vacuum chamber 704 is performed. In the degassing pipe 705, a vacuum pressure regulating valve 707 for adjusting the vacuum pressure in the vacuum chamber 704 is inserted therebetween.

In this degassing module DM, when the rinse liquid flows through the liquid flow passage 703, the dissolved gas is removed from the rinse liquid by passing it through the hollow fiber membrane. The rinse liquid after the degassing treatment is guided to the rinse liquid supply nozzle 660 of FIG. 5 through the rinse liquid supply pipe 661a, and is supplied onto the substrate W. As shown in FIG.

(4) Effect of this embodiment

In this embodiment, in the 2nd washing | cleaning / drying processing unit SD2 of the interface block 15, the drying process of the board | substrate W after an exposure process is performed. In this case, the liquid layer L is formed on the substrate W using the degassed rinse liquid, and the liquid layer L is integrally moved to the outside of the substrate W using centrifugal force and surface tension. As a result, minute droplets do not remain on the substrate W, and the cleaning liquid and the rinse liquid on the substrate W can be reliably removed. Therefore, generation of reaction products such as watermarks on the substrate W can be suppressed. As a result, generation | occurrence | production of the processing defect of the board | substrate W can be prevented.

In the second cleaning / drying processing unit SD2, the cleaning processing of the substrate W is performed before the drying processing. In this case, even if dust etc. in atmosphere adhere to the board | substrate W with a liquid at the time of an exposure process, the deposit can be removed. Thereby, contamination of the board | substrate W can be prevented. As a result, poor processing of the substrate can be reliably prevented.

Further, before the exposure treatment of the substrate W is performed in the exposure apparatus 16, the cleaning treatment of the substrate W is performed in the first cleaning / drying processing unit SD1. During this cleaning process, a part of the components of the resist cover film on the substrate W are eluted into the cleaning liquid or the rinse liquid and washed. Therefore, even if the substrate W is in contact with the liquid in the exposure apparatus 16, the components of the resist cover film on the substrate W hardly elute into the liquid. Moreover, the dust etc. which adhered to the board | substrate W before an exposure process can be removed. As a result, contamination in the exposure apparatus 16 is prevented.

In the first cleaning / drying processing unit SD1, the drying processing of the substrate W is performed after the cleaning processing of the substrate W. FIG. Also in this case, similarly to the second cleaning / drying processing unit SD2, minute droplets do not remain on the substrate W, and the cleaning liquid and the rinse liquid on the substrate W can be reliably removed. Therefore, generation of reaction products such as watermarks on the substrate W can be suppressed. As a result, generation | occurrence | production of the processing defect of the board | substrate W can be prevented.

In addition, the cleaning liquid or rinse liquid attached to the substrate W is removed during the cleaning process, thereby preventing the cleaning liquid or rinse liquid from permeating the resist cover film or the resist film on the substrate W before the exposure process. Thereby, deterioration of the resolution performance at the time of exposure process can be prevented.

(5) Other Embodiments

In the developing processing unit DEV of the developing processing block 12, the same drying treatment as above may be performed. 12 is a diagram for explaining the configuration of the developing unit DEV. The development processing unit DEV in FIG. 12 will be described different from the first and second cleaning / drying processing units SD1 and SD2 in FIG. 5.

As shown in FIG. 12, the developing unit DEV includes a spin chuck 71 instead of the spin chuck 621 and a developer supply nozzle 71 instead of the cleaning solution supply nozzle 650. The developer supply nozzle 71 is connected to the developer supply source R4 through the developer supply pipe 751. The valve Vd is inserted between the developing solution supply pipes 751. By opening the valve Vd, the developer is supplied from the developer supply source R4 to the developer supply nozzle 71.

In the development process, the developer supply nozzle 71 moves above the center of the substrate W. As shown in FIG. Then, the developer is discharged from the developer supply nozzle 71 to the center of the substrate W while the substrate W is rotated by the spin chuck 21. In this case, the developing solution spreads from the center of the substrate W to the periphery by the centrifugal force caused by the rotation of the substrate W. In FIG. As a result, the developer is contained on the substrate W. As shown in FIG. In addition, the solution of the developing solution on the board | substrate W may be immersed in the state which stopped rotation of the board | substrate W. FIG. Thereafter, the discharge of the developer from the developer supply nozzle 71 is stopped and the rotation of the substrate W is stopped. On the substrate W, the dissolution reaction of the resist film proceeds.

After a predetermined time has elapsed, the rinse liquid supply nozzle 660 is moved above the central portion of the substrate, and the rinse liquid is discharged from the rinse liquid supply nozzle 660 onto the substrate W. As a result, the dissolution reaction of the resist film is stopped. Subsequently, the rinse liquid is continuously discharged from the rinse liquid supply nozzle 660 while the substrate W rotates at a high speed, and the developer on the substrate W is washed. The developer on the substrate may be washed off while the rotation of the substrate W is stopped.

Thereafter, the drying treatment of the substrate W shown in Figs. 6 to 8 is performed, and the rinse liquid attached to the substrate W is removed. In this case, the rinse liquid after the degassing process by the degassing module DM is used. Therefore, the amount of bubbles in the liquid layer L of the rinse liquid formed on the substrate W is reduced. Thereby, the liquid layer L of the rinse liquid can be reliably moved to the outside of the substrate W in a state in which the ring shape is maintained without separating the liquid layer L into a plurality of regions.

Therefore, a minute droplet does not remain on the board | substrate W, and the rinse liquid on the board | substrate W can be reliably removed. As a result, developing defects caused by droplets remaining on the substrate W can be reliably prevented.

(6) another embodiment

In the above embodiment, the first and second cleaning / drying processing units SD1 and SD2 are disposed in the interface block 15, but at least one of the first and second cleaning / drying processing units SD1 and SD2 is disposed. It may be arranged in the resist cover film removal block 14 shown in FIG. Alternatively, a cleaning / drying processing block including at least one of the first and second cleaning / drying processing units SD1 and SD2 may be disposed between the resist cover film removal block 14 and the interface block 15 shown in FIG. 1. You may install it.

In addition, the first cleaning / drying processing unit (SDl), the second cleaning / drying processing unit (SD2), coating unit (BARC, RES, COV), development processing unit (DEV), removal unit (REM), heating unit ( The number of HP), the cooling unit CP, and the placement and cooling unit P-CP may be appropriately changed in accordance with the processing speed of each processing block.

(7) Correspondence between each component of the claim and each component of the embodiment

Hereinafter, although the corresponding example of each component of embodiment and each element of embodiment is demonstrated, this invention is not limited to the following example.

In the above embodiment, the first cleaning / drying processing unit SD1, the second cleaning / drying processing unit SD2 or the developing processing unit DEV are examples of the substrate drying apparatus, and the spin chucks 71 and 621 are substrates. An example of the rotary support device, the rinse liquid supply nozzle 660 and the degassing module DM are examples of the liquid layer forming unit, the inert gas supply nozzle 670 is an example of the gas discharge unit, the degassing module DM is the gas removal unit The rinse liquid supply nozzle 660 is an example of the rinse liquid supply unit, the liquid passage 703 is an example of the gas permeation passage, the vacuum chamber 704 is an example of the gas chamber, and the degassing piping 705 ) Is an example of a vacuum suction unit.

In addition, the indexer block 9, the antireflection film processing block 10, the resist film processing block 11, the development processing block 12, the resist cover film processing block 13, and the resist cover film removing block 14 are An example of the processing unit, and the interface block 15 is an example of the exchange unit.

As each component of a claim, you may use other various elements which have the structure or function which were described in a claim.

Claims (9)

A substrate drying apparatus for performing a drying treatment of a substrate,
A substrate rotation support device which rotates while supporting the substrate horizontally;
A liquid layer forming unit for forming a liquid layer of a rinse liquid on a substrate supported by the substrate rotation support device;
And a gas discharge portion for discharging gas toward the center of the liquid layer of the rinse liquid formed on the substrate by the liquid layer forming portion in a state where the substrate is rotated by the substrate rotation support device.
The liquid layer forming unit,
A gas removal unit for removing gas from the rinse liquid,
A substrate drying apparatus comprising a rinse liquid supply unit for supplying a rinse liquid in a state in which gas is removed by the gas removal unit on the substrate. delete delete The method of claim 1,
The gas removal unit is made of a gas permeable membrane, and a gas permeation passage into which the rinse liquid is introduced;
A gas accommodation chamber accommodating the gas permeation passage,
And a vacuum suction unit for vacuum suction into the gas chamber. A substrate processing apparatus arranged to be adjacent to an exposure apparatus,
A processing unit for processing the substrate,
A exchange part for exchanging a substrate between the processor and the exposure apparatus;
At least one of the processing unit and the exchange unit,
A substrate drying apparatus for drying the substrate,
The substrate drying apparatus,
A substrate rotation support device which rotates while supporting the substrate horizontally;
A liquid layer forming unit for forming a liquid layer of a rinse liquid on a substrate supported by the substrate rotation support device;
And a gas discharge portion for discharging gas toward the center of the liquid layer of the rinse liquid formed on the substrate by the liquid layer forming portion in a state where the substrate is rotated by the substrate rotation support device.
The liquid layer forming unit,
A gas removal unit for removing gas from the rinse liquid,
A substrate drying apparatus comprising a rinse liquid supply unit for supplying a rinse liquid in a state in which gas is removed by the gas removal unit on the substrate. The method of claim 5,
And the substrate drying apparatus performs a drying treatment of the substrate after the exposure treatment by the exposure apparatus. The method of claim 5,
And the substrate drying apparatus performs a drying treatment of the substrate before the exposure treatment by the exposure apparatus. delete Removing gas from the rinse solution,
Forming a liquid layer of the rinse liquid on the substrate by supplying the rinse liquid in a state where the gas is removed thereon,
And discharging a gas toward the center of the liquid layer of the rinse liquid formed on the substrate while rotating the substrate.

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