JPH03108313A - Resist developer - Google Patents

Resist developer

Info

Publication number
JPH03108313A
JPH03108313A JP24352289A JP24352289A JPH03108313A JP H03108313 A JPH03108313 A JP H03108313A JP 24352289 A JP24352289 A JP 24352289A JP 24352289 A JP24352289 A JP 24352289A JP H03108313 A JPH03108313 A JP H03108313A
Authority
JP
Japan
Prior art keywords
wafer
developing
developer
tank
lid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24352289A
Other languages
Japanese (ja)
Inventor
Tetsushi Machida
町田 哲志
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP24352289A priority Critical patent/JPH03108313A/en
Publication of JPH03108313A publication Critical patent/JPH03108313A/en
Pending legal-status Critical Current

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  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To make the developing conditions of the title device uniform by bringing a lid provided with a developing solution supplying mechanism and sucking mechanism nearer to a space above a wafer. CONSTITUTION:When a wafer 34 is subjected to rinsing and spindrying after development, a developing solution supplying lid 21 and the side face sections 31 of developing tanks move upward and the bottom sections 32 of the developing tanks move downward. In addition, a spin chuck 33 rotates. Then the sections 31 and 32 move downward and the processed wafer 34 is lifted up and carried out of a development processing tank by a wafer carrying arm 37. When such arrangement is made, the entire surface of the water 34 can be dipped in a developing solution in a short time and the uniformity of developing conditions can be improved. Moreover, the consumption of the developing solution can be reduced.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、半導体集積回路装置(以下、LSIという)
の製造でのリソグラフィー工程における感光性高分子(
以下、レジストという)の現像装置に関するものである
[Detailed Description of the Invention] (Industrial Application Field) The present invention relates to a semiconductor integrated circuit device (hereinafter referred to as LSI).
Photosensitive polymers (
The present invention relates to a developing device for (hereinafter referred to as resist).

(従来の技術) 従来、LSI製造のリソグラフィー工程において、パタ
ーンを形成するレジストの現像方法として、スプレィ現
像法、パドル現像法、デイツプ現像法等が知られている
(Prior Art) Conventionally, spray development, paddle development, dip development, and the like are known as methods for developing a resist that forms a pattern in a lithography process for LSI manufacturing.

第7図はかかる従来のデイツプ現像法に用いるレジスト
現像装置の概略断面図である。
FIG. 7 is a schematic cross-sectional view of a resist developing device used in such a conventional dip developing method.

この図において、1は現像されるべきレジストを有する
ウェハ、2はウェハ1を真空吸着するスピンチャック、
3は現像液槽であり、この現像液槽3には現像液供給口
4及び廃液の排出口5が設けられている。6は現像液槽
3を現像液で満たす際に排出口5を塞ぐドレインパルプ
、7はウェハ1の裏面に現像液が浸出するのを防ぐリン
グ状のストッパ、8はリンス液滴下ノズルである。また
、9はスピンチャック2の回転時に飛散する現像液及び
リンス液を受けるスピンカップである。このスピンカッ
プ9は廃液の排出口10及び排気口11を有し、現像時
には上昇し、ウェハ1の搬入出時には下降する動作を行
う、12はスピンカップ9の下降時にウェハlを搬送す
る搬送アームであり、その搬送アーム12は、搬送ベル
ト13、ガイド14からなる。このガイド14はウェハ
搬送方向に対して上下左右に動作する。
In this figure, 1 is a wafer having a resist to be developed; 2 is a spin chuck that vacuum-chucks the wafer 1;
3 is a developer tank, and this developer tank 3 is provided with a developer supply port 4 and a waste solution discharge port 5. 6 is a drain pulp that closes the discharge port 5 when the developer tank 3 is filled with developer; 7 is a ring-shaped stopper that prevents the developer from seeping onto the back surface of the wafer 1; and 8 is a rinse liquid dripping nozzle. Further, 9 is a spin cup that receives the developer and rinse liquid that are scattered when the spin chuck 2 rotates. This spin cup 9 has a waste liquid discharge port 10 and an exhaust port 11, and moves upward during development and descends when loading and unloading the wafer 1. Reference numeral 12 denotes a transfer arm that transfers the wafer 1 when the spin cup 9 descends. The conveyor arm 12 includes a conveyor belt 13 and a guide 14. This guide 14 moves vertically and horizontally with respect to the wafer transport direction.

(発明が解決しようとする課題) しかしながら、上記構成のレジスト現像装置では、デイ
ツプ形成槽より現像液が供給されるために、ウェハ状の
半導体回路基板(以下、ウェハという)は、外周部から
中心部へと逐次的に現像液に浸漬されるので、その現像
時間に差が生じる。
(Problem to be Solved by the Invention) However, in the resist developing device having the above configuration, since the developer is supplied from the dip forming tank, the wafer-shaped semiconductor circuit board (hereinafter referred to as wafer) is Since each part is sequentially immersed in the developer, the development time differs.

つまり、レジストを用いて、ウェハ上に回路パターンを
形成する場合には、ウェハ全面域にわたって同一のパタ
ーン寸法を確保する必要があり、そのためには、ウェハ
全面域の現像条件を等しくすることが必須である。しか
し、この点で、従来のレジスト現像装置は、現像時間、
つまり現像条件に差があり、これがウェハ上の回路パタ
ーン寸法差の原因になるといった問題点があった。
In other words, when forming a circuit pattern on a wafer using resist, it is necessary to ensure the same pattern dimensions over the entire wafer area, and to do so, it is essential to equalize the development conditions over the entire wafer area. It is. However, in this respect, the conventional resist developing device has a short development time.
In other words, there is a problem in that there are differences in development conditions, which cause differences in circuit pattern dimensions on the wafer.

本発明は、上記問題点を除去し、被現像体であるウェハ
の上方に蓋を近接させ、更に、現像液を供給する際に蓋
の中央より現像液を吸引することにより、現像液供給時
間を短縮し、ウェハ全面域の現像条件の均一化を図り得
るレジスト現像装置を提供することを目的とする。
The present invention eliminates the above problems, places the lid close to above the wafer, which is the object to be developed, and furthermore, sucks the developer from the center of the lid when supplying the developer, thereby increasing the developer supply time. It is an object of the present invention to provide a resist developing apparatus that can shorten the time required for developing a wafer and make the developing conditions uniform over the entire wafer area.

(課題を解決するための手段) 本発明は、上記目的を達成するために、レジストを用い
てパターンを形成する現像装置において、現像液を満た
すことのできる現像処理槽を有し、該現像処理槽に配置
した被現像体の上方に現像液供給機構と吸引機構を有す
る蓋とをウェハの現像時に近接させて設置し、短時間で
ウェハ面上に均一な現像液層を形成するようにしたもの
である。
(Means for Solving the Problems) In order to achieve the above object, the present invention provides a developing device for forming a pattern using a resist, which includes a developing tank capable of filling a developing solution, A developer supply mechanism and a lid having a suction mechanism are placed close together above the objects to be developed placed in the tank during wafer development, so that a uniform developer layer can be formed on the wafer surface in a short time. It is something.

(作用) 本発明によれば、上記のように構成したので、現像液供
給時間を短縮し、現像条件を均一化するとともに、現像
液消費量の削減を図ることができる。特に、大口径ウェ
ハ(6インチ以上)への適用が容易である。
(Function) According to the present invention, as configured as described above, the developer supply time can be shortened, development conditions can be made uniform, and the amount of developer consumed can be reduced. In particular, it is easy to apply to large diameter wafers (6 inches or more).

(実施例) 以下、本発明の実施例について図面を参照しながら詳細
に説明する。
(Example) Hereinafter, an example of the present invention will be described in detail with reference to the drawings.

第1図は本発明の実施例を示すレジスト現像装置の蓋の
上面図、第2図はそのレジスト現像装置の蓋の裏面図、
第3図は第1図のA−A線断面図、第4図はそのレジス
ト現像装置の吸引部の配管図である。
FIG. 1 is a top view of the lid of a resist developing device showing an embodiment of the present invention, FIG. 2 is a back view of the lid of the resist developing device,
FIG. 3 is a sectional view taken along the line A--A in FIG. 1, and FIG. 4 is a piping diagram of the suction section of the resist developing device.

これらの図に示すように、21は現像液供給蓋、22は
吸引部、23は現像液供給部、24は蓋内部に形成され
た現像液を通す溝、25は円周状に配置された現像液供
給孔である。また、26は空気シリンダ等によって現像
液供給蓋21を鉛直方向に上下させる支持体である。
As shown in these figures, 21 is a developer supply lid, 22 is a suction part, 23 is a developer supply part, 24 is a groove for passing the developer formed inside the lid, and 25 is arranged in a circumferential manner. This is a developer supply hole. Further, 26 is a support member for vertically moving the developer supply lid 21 up and down using an air cylinder or the like.

第3図に示すように、現像液供給部23は2系統あり、
現像液の供給効率を高めている。なお、現像液供給蓋2
1の材質については、使用する現像液に対する耐性にの
み制約を受けることになり、例えば、5tlS(Spe
cial tlse 5tainless 5teel
)或いはフッ素樹脂等が考えられる。現像液供給時には
、第3図において、吸引部22を負圧にするとともに現
像液供給孔25より現像液を供給する。この時、吸引部
22には現像液も吸引される恐れがあるので、第4図に
示すように、コンバム27を用いテ負圧を作り、しかも
ミスト・トラップ・タンク28を設けることが望ましい
、即ち、ドライエアaを流してコンバム27により真空
状態をつくり、吸引部22を負圧にする。そして、ドラ
イエアaと吸引部22から吸引された現像液すとが混合
されたものをミスト・トラップ・タンク28に送り、そ
こで排気Cと排液dとに気液分離する。
As shown in FIG. 3, the developer supply section 23 has two systems.
Improves developer supply efficiency. Note that the developer supply lid 2
The material No. 1 is limited only by its resistance to the developer used. For example, 5tlS (Spec.
cial tlse 5tainless 5teel
) or fluororesin. When supplying the developer, as shown in FIG. 3, the suction section 22 is made negative pressure and the developer is supplied from the developer supply hole 25. At this time, there is a risk that the developer may also be sucked into the suction section 22, so it is desirable to create a negative pressure using a combination chamber 27 and to provide a mist trap tank 28, as shown in FIG. That is, a vacuum state is created by the combination 27 by flowing dry air a, and the suction section 22 is brought into negative pressure. Then, a mixture of the dry air a and the developer liquid sucked from the suction section 22 is sent to the mist trap tank 28, where it is separated into gas and liquid into an exhaust gas C and a waste liquid d.

第5図は本発明のレジスト現像処理槽における現像液の
供給及び現像状態を示す断面図、第6図はその現像処理
槽のウェハの処理動作を説明する工程図である。
FIG. 5 is a cross-sectional view showing the supply of developer and the development state in the resist development tank of the present invention, and FIG. 6 is a process diagram illustrating the wafer processing operation of the development tank.

これらの図において、31は現像槽の側面部、32は現
像槽の底面部であり、これらは上下方向に対する傾斜面
31a、32aを有している。現像液供給蓋21、現像
槽の側面部31及び底面部32が組み合わさり、現像槽
を形成する。現像槽の側面部31を上昇させ、現像槽の
底面部32を下降させると、現像液及びリンス液を廃液
させる空間36が生じ、傾斜面31a、32aに沿って
これらの液が順調に廃液される、33はウェハ34を吸
着して固定させ、図示しないモータにより回転するスピ
ンチャックである。
In these figures, 31 is a side surface of the developer tank, 32 is a bottom surface of the developer tank, and these have inclined surfaces 31a and 32a in the vertical direction. The developer supply lid 21, the side surface 31 and the bottom surface 32 of the developer tank are combined to form a developer tank. When the side surface 31 of the developer tank is raised and the bottom surface 32 of the developer tank is lowered, a space 36 is created in which the developer and rinse liquid are drained, and these liquids are smoothly drained along the slopes 31a and 32a. 33 is a spin chuck that attracts and fixes the wafer 34 and is rotated by a motor (not shown).

35は現像時に現像液がウェハ34の裏面に廻り込まな
いようにするためのリング状のストッパである。
Reference numeral 35 is a ring-shaped stopper for preventing the developer from getting around to the back surface of the wafer 34 during development.

第5図において、Dで示す現像液供給蓋21とウェハ3
4との離隔距離は、使用する現像液の粘度及びウェハ3
4上に塗布された露光済のレジストに対する表面張力等
により、適宜選択できる。離隔距離りを小さく(約5−
以下)すれば、現像液の使用量を削減することができる
In FIG. 5, the developer supply lid 21 and the wafer 3 indicated by D
The separation distance from the wafer 3 depends on the viscosity of the developer used and the wafer 3.
It can be selected as appropriate depending on the surface tension of the exposed resist coated on No. 4. Reduce the separation distance (approximately 5-
(below), the amount of developer used can be reduced.

次に、第6図を参照しながら現像処理槽の動作について
順を追って説明する。
Next, the operation of the developing tank will be explained in order with reference to FIG.

まず、現像液供給時及び現像時の現像処理槽の状態は第
6図(a)に示すようである。
First, the state of the developing tank during developer supply and development is as shown in FIG. 6(a).

次に、現像が終了し、ウェハ34をリンス及びスピンド
ライする際には、第6図(b)に示すように、現像液供
給蓋21及び現像槽の側面部31が上昇し、現像槽の底
面部32は下降し、スピンチャック33が回転する。
Next, when the development is completed and the wafer 34 is rinsed and spin-dried, the developer supply lid 21 and the side surface 31 of the developer tank are raised, as shown in FIG. The bottom portion 32 is lowered and the spin chuck 33 is rotated.

次に、第6図(c)に示すように、現像槽の側面部31
及び底面部32が下降し、処理されたウェハ34は、ウ
ェハ搬送用アーム37によって持ち上げられ、現像処理
槽より搬出される。また、搬入時も同様に、ウェハ34
はウェハ搬送用アーム37によって現像処理槽内に搬入
される。
Next, as shown in FIG. 6(c), the side surface 31 of the developer tank is
Then, the bottom part 32 is lowered, and the processed wafer 34 is lifted up by the wafer transfer arm 37 and carried out from the developing tank. Similarly, when carrying in the wafer 34,
is carried into the developing tank by the wafer carrying arm 37.

なお、本発明は上記実施例に限定されるものではなく、
本発明の趣旨に基づいて種々の変形が可能であり、これ
らを本発明の範囲から排除するものではない。
Note that the present invention is not limited to the above embodiments,
Various modifications are possible based on the spirit of the present invention, and these are not excluded from the scope of the present invention.

(発明の効果) 以上、詳細に説明したように、本発明によれば、現像液
供給機構と吸引機構を有する蓋とをウェハ上方に近接さ
せたので、短時間にウェハ全面を現像液に浸漬させるこ
とが可能となり、次のような効果を奏することができる
(Effects of the Invention) As described in detail above, according to the present invention, the developer supply mechanism and the lid having the suction mechanism are placed close to each other above the wafer, so that the entire wafer can be immersed in the developer in a short time. This makes it possible to achieve the following effects.

(1)現像条件の均一性の向上を図ることができる。(1) Uniformity of development conditions can be improved.

(2)現像液消費量の削減を図ることができる。(2) The amount of developer consumed can be reduced.

(3)大口径ウェハ(6インチ以上)への適用が容易で
ある。
(3) It is easy to apply to large diameter wafers (6 inches or more).

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の実施例を示すレジスト現像装置の蓋の
上面図、第2図はそのレジスト現像装置の蓋の裏面図、
第3図は第1図のA−A線断面図、第4図は本発明の実
施例を示すレジスト現像装置の吸引部の配管図、第5図
は本発明のレジスト現像処理槽における現像液の供給及
び現像状態を示す断面図、第6図はその現像処理槽のウ
ェハの処理動作を説明する工程図、第7図は従来のレジ
スト現像装置の概略断面図である。 21・・・現像液供給蓋、22・・・吸引部、23・・
・現像液供給部、24・・・蓋内部に形成された現像液
を通す溝、25・・・現像液供給孔、26・・・支持体
、27・・・コンバム、28・・・ミスト・トラップ・
タンク、31・・・現像槽の側面部、31a、32a・
・・傾斜面、32・・・現像槽の底面部、33・・・ス
ピンチャック、34・・・ウェハ、35・・・リング状
のストッパ、36・・・空間、37・・・ウェハ搬送用
アーム。 第1図
FIG. 1 is a top view of the lid of a resist developing device showing an embodiment of the present invention, FIG. 2 is a back view of the lid of the resist developing device,
3 is a sectional view taken along the line A-A in FIG. 1, FIG. 4 is a piping diagram of a suction section of a resist developing device showing an embodiment of the present invention, and FIG. 5 is a developing solution in a resist developing treatment tank of the present invention. 6 is a process diagram illustrating the wafer processing operation of the developing tank, and FIG. 7 is a schematic sectional view of a conventional resist developing apparatus. 21... Developer supply lid, 22... Suction part, 23...
・Developer supply part, 24...Groove for passing the developer formed inside the lid, 25...Developer supply hole, 26...Support, 27...Combin, 28...Mist・trap·
Tank, 31... Side part of developer tank, 31a, 32a.
... Inclined surface, 32 ... Bottom of developer tank, 33 ... Spin chuck, 34 ... Wafer, 35 ... Ring-shaped stopper, 36 ... Space, 37 ... For wafer transport arm. Figure 1

Claims (1)

【特許請求の範囲】 レジストを用いてパターンを形成する現像装置において
、 現像液を満たすことのできる現像処理槽を有し、該現像
処理槽に配置した被現像体の上方に現像液供給機構と吸
引機構を有する蓋とをウェハの現像時に近接させて設置
し、短時間でウェハ面上に均一な現像液層を形成するこ
とを特徴とするレジスト現像装置。
[Scope of Claims] A developing device for forming a pattern using a resist, which includes a developing tank capable of filling a developing solution, and a developing solution supply mechanism and a developing device disposed above an object to be developed disposed in the developing tank. A resist developing device characterized in that a lid having a suction mechanism is installed in close proximity to the wafer during development to form a uniform developer layer on the wafer surface in a short time.
JP24352289A 1989-09-21 1989-09-21 Resist developer Pending JPH03108313A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24352289A JPH03108313A (en) 1989-09-21 1989-09-21 Resist developer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24352289A JPH03108313A (en) 1989-09-21 1989-09-21 Resist developer

Publications (1)

Publication Number Publication Date
JPH03108313A true JPH03108313A (en) 1991-05-08

Family

ID=17105160

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24352289A Pending JPH03108313A (en) 1989-09-21 1989-09-21 Resist developer

Country Status (1)

Country Link
JP (1) JPH03108313A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6632476B2 (en) * 2000-03-15 2003-10-14 Kabushiki Kaisha Toshiba Substrate processing method and substrate processing apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6632476B2 (en) * 2000-03-15 2003-10-14 Kabushiki Kaisha Toshiba Substrate processing method and substrate processing apparatus

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