JP2712392B2 - Resist development method - Google Patents

Description

Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resist developing method for forming a pattern on a resist applied on a semiconductor substrate using a developing solution.

[Conventional technology]

In recent years, in the manufacture of semiconductor integrated circuits, high integration and miniaturization have been promoted in order to mass-produce this semiconductor integrated circuit at low cost and to have high performance, and it is called an ultra LSI. High density storage circuit devices have been developed. In order to form an VLSI circuit pattern on a semiconductor substrate, it is necessary to accurately form a fine pattern, and the resist development process is important.

FIG. 3 is a longitudinal sectional view for explaining a conventional resist developing method. The wafer 101 is vacuum-sucked on a wafer chuck 201 of a developing device. A workpiece 102 and a resist 103 are attached on the wafer 101. The developing step is to first drop water from the nozzle 203 of the developing device onto the resist 103, and then rotate the wafer chuck support rod 202 at high speed to scatter water, remove dust on the surface of the resist 103, and simultaneously remove the developer. Improve familiarity.
Thereafter, an appropriate amount of the developing solution 104B is dropped onto the resist 103 from the nozzle 203, and the developing solution 104B is made to cover the resist surface, and at the same time, the support rod 202 is slowly rotated to perform development for a certain period of time. Next, the support rod 202 is rotated at a high speed to scatter the developer. Next, water is dropped again from the nozzle 203, and the support rod 202 is rotated at a high speed, thereby completing the developing process.

[Problems to be solved by the invention]

In the conventional resist developing method described above, since the developing solution 104B is substantially stationary on the wafer 101 by surface tension, the reaction speed between the developing solution 104B and the resist 103 differs between the central portion and the peripheral portion of the wafer 101. That is, while the developer 104B is relatively large in the central part, the developer is
Even if the amount of 104B is small and the performance of the developer deteriorates due to the development reaction, the development is slower than at the center where a new developer is supplied. Therefore, the dimensions of the pattern formed between the central part and the peripheral part are different, which has the effect of deteriorating the performance of the integrated circuit device, lowering the yield, etc., and stabilizing a large quantity of high quality integrated circuit devices at a low price. There is a disadvantage that it cannot be supplied. Further, if the developing solution 104B is continuously supplied from the nozzle 203 during the development in order to avoid the problem caused by this developing method, there is a disadvantage that a large amount of the developing solution is consumed and the integrated circuit device becomes expensive.

[Means for solving the problem]

The resist developing method of the present invention is a resist developing method in which a photosensitive organic film applied on a semiconductor substrate is exposed and then a pattern is formed using a developing solution. The developing device is characterized in that the surface coated with the photosensitive organic film is brought into contact with the developing solution in parallel with the lower surface, and development is performed by rotating the container or a fin provided in the container.

According to the present invention, the developing speed is the same over the entire surface of the wafer, that is, the size of the formed pattern is constant, and the bubbles between the resist surface and the interface of the developing solution are caused to flow outward by the liquid flow. Can be prevented.

〔Example〕

 Next, the present invention will be described with reference to the drawings.

FIG. 1 is a longitudinal sectional view for explaining one embodiment of the present invention. The wafer 101 on which the workpiece 102 is attached is vacuum-chucked to the vacuum chuck portion 301 of the developing device on the surface on the back side of the surface on which the resist 103 is applied, and the surface on which the resist 103 is applied is used as a lower surface with water 104A. Parallel to the surface of the The water 104A is supplied from the developer / water supply nozzle 304A to the cup 30
Supplied in 2A. Cup 302A also rotates as support bar 303 rotates, thereby causing cup 30 to rotate.
The water 104A in 2A moves in the cup to wash the surface of the resist 103 with water and to improve the familiarity with the developing solution.

Next, at the same time as the chuck 301 is lifted while holding the wafer 101, the valve 306 under the cup is opened, and the water 104A is discharged from the outlet 305.
Is discharged. After discharging the water 104A, the valve 306 is closed again, and an appropriate amount of the developer is dropped into the cup 302A from the nozzle 304A. Thereafter, the wafer chuck 301 is lowered, and the resist surface comes into parallel contact with the developer 104B. Cup 302A is a support rod
Rotation is performed by 303, and control is performed so that the developing speed is the same between the central portion and the peripheral portion of the wafer. In addition, due to this rotation, the bubbles 105 between the resist surface and the developer interface are caused to flow outward by the liquid flow and are reduced. After the development for a certain period of time, the developing solution is discharged from the discharge port 305, and the resist on which the pattern is formed is washed with water supplied to the cup 302A from the nozzle 304A, and the developing process is completed.

FIG. 2 is a longitudinal sectional view for explaining another embodiment of the present invention. Basically, it is almost the same as the embodiment, but the nozzle 304A of the embodiment is connected to the cup 302B as shown in FIG.
, And the cup 302B is rotated by the support rod 303. At the same time, the rotating fin 307 is mounted in the cup 302B and further rotated to control the flow of the developer in the cup more finely. Thus, the uniformity of development is improved. The rotation direction of the cup 302B and the fin 307 can be freely selected, and only one of them may be rotated.

The wafer chuck may be a method of mechanically fixing the side of the wafer as well as vacuum suction.

〔The invention's effect〕

As described above, in the present invention, by making the resist coating surface of the wafer the lower surface and making contact with the developing solution surface, the developing speed is the same at the central portion and the peripheral portion of the wafer, and the pattern size is formed to be constant. There is an effect that a large amount of a high-performance and low-cost integrated circuit can be stably supplied in a small amount of liquid consumption.

[Brief description of the drawings]

FIG. 1 is a longitudinal sectional view for explaining one embodiment of the present invention,
FIG. 2 is a longitudinal sectional view for explaining another embodiment of the present invention, and FIG. 3 is a longitudinal sectional view for explaining a conventional example. 101: wafer, 102: workpiece, 103: resist, 104A: water, 104B: developer, 105: air bubbles, 201 ...
... wafer chuck, 202 ... support rod, 203 ... nozzle,
301 ... vacuum chuck, 302A ... cup, 302B ... cup, 303 ... support rod, 304A ... nozzle, 304B ... supply port, 305 ... discharge port, 306 ... valve, 307 ... fin.

Claims (2)

(57) [Claims] In a resist developing method for exposing a photosensitive organic film applied on a semiconductor substrate and forming a pattern using a developing solution, a developing solution is contained in a container, and the photosensitive substrate is exposed to light. A resist developing method, wherein the surface on which the conductive organic film is coated is in contact with the developer in parallel with the lower surface, and the container is rotated to perform development. 2. A resist developing method for exposing a photosensitive organic film applied on a semiconductor substrate and then forming a pattern using a developing solution, wherein the developing solution is contained in a container provided with rotating fins. A resist developing method, wherein the semiconductor substrate is contacted in parallel with the developing solution with the surface of the semiconductor substrate coated with the photosensitive organic film as the lower surface, and rotating fins in the container are rotated to perform development.