JP2003068700A - Substrate-processing apparatus and substrate-processing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate-processing apparatus and a substrate-processing method, capable of performing superior processings with a processing fluid. SOLUTION: This substrate-processing apparatus is provided with a wafer- holding mechanism 1 for holding a wafer W approximately horizontally, and a shutter plate 2 to be rotated facingly above the mechanism 1 at processing. The mechanism 1 has a wafer placing table 12 extending almost horizontally. A recessed part 13, recessed downwardly in its outer shape (almost round) of the wafer W to be processed, is formed on the top surface of the table 12. The bottom of the part 13 is a bottom 13a, and the periphery of the part 13 is a step 14. A discharge port 16 for discharging the processing fluid is provided inside the part 13. Hemispherical projections 21 are provided on the rear surface of the plate 2.

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a semiconductor wafer,
The present invention relates to a substrate processing apparatus for performing processing using a processing fluid on various substrates such as glass substrates for liquid crystal display devices, glass substrates for plasma display panels and substrates for magnetic / optical disks.

[0002]

2. Description of the Related Art In a factory for manufacturing a semiconductor device or a liquid crystal display device, a so-called bevel etching process is sometimes performed in order to remove an unnecessary thin film on a back surface or a peripheral portion of a semiconductor wafer or a glass substrate for a liquid crystal display panel. . A conventional apparatus for performing this bevel etching process includes a spin chuck that can rotate while holding a substrate to be processed such as a semiconductor wafer. The spin chuck includes a plurality of chuck pins for supporting the wafer. The chuck pin has a support portion that supports the lower surface of the peripheral edge portion of the wafer and a holding portion that holds the end surface of the wafer.

As a result, the back surface of the wafer can be etched by supplying the etching liquid from below while rotating the wafer. By allowing the etching liquid to flow around the peripheral portion of the wafer surface, the etching process can be performed on the end face of the wafer and the peripheral portion of the surface.

[0004]

However, in the bevel etching process by such an apparatus, the processing fluid, that is, the processing liquid or the processing gas, is applied to the portions of the wafer end surface and the back surface (lower surface) periphery where the chuck pins abut. Is not supplied. Therefore, such a wafer portion has uneven etching processing and uneven drying. Then, the objective of this invention is to provide the substrate processing apparatus which can perform favorable processing by a processing fluid.

Another object of the present invention is to provide a substrate processing method capable of excellent processing with a processing fluid.

[0006]

The invention according to claim 1 for solving the above-mentioned problems is a substrate processing apparatus for supplying a processing fluid to a substrate (W) to process the substrate. The contact portion (21,
22 and 24), which is rotatable about a vertical axis, and a processing fluid is discharged toward the lower surface of the substrate so as to press the substrate against the contact portion of the rotating body. A substrate processing apparatus including a processing fluid ejecting means (15, 16).

The alphanumeric characters in parentheses represent corresponding constituent elements in the embodiments described later. The same applies in this section below. According to the configuration of the present invention, the processing fluid is ejected from the lower side of the substrate to be processed by the processing fluid ejecting means and applied to the lower surface of the substrate to float the substrate, and the upper surface of the substrate is provided on the rotating body. It can be pressed against the contact part. When the rotating body is rotated in this state, the substrate is also rotated at the same time, and the lower surface of the substrate can be processed. Furthermore, the processing fluid is caused to wrap around the end surface or the upper surface of the substrate, whereby the end surface or the upper surface of the substrate can be processed. The processing fluid can be, for example, a chemical liquid such as an etching liquid, pure water for cleaning, a gas (for example, N 2) for drying, or the like.

In processing a substrate using such a substrate processing apparatus, only the contact portion of the rotating body is in contact with the upper surface of the substrate. That is, since there is no member that contacts the lower surface and the end surface of the substrate, the lower surface and the end surface of the substrate can be favorably treated with the processing fluid. The invention according to claim 2 is the substrate processing apparatus according to claim 1, wherein the processing fluid discharged by the processing fluid discharging means includes a processing liquid and a processing gas.

When processing with a processing solution (chemical solution, pure water, etc.), the processing solution and the processing gas (for example, N 2) are simultaneously discharged toward the back surface (lower surface) of the substrate, so that the amount of the processing solution used can be reduced. You can save. That is, if only the processing liquid is discharged to float the substrate and press it against the contact portion of the rotating body, a flow rate much higher than the minimum flow rate required for processing the substrate is required. Therefore, the flow rate of the discharged processing liquid can be reduced by using the processing gas together in order to float the substrate.

According to a third aspect of the present invention, in the substrate processing apparatus of the first or second aspect, the processing fluid ejecting means has a plurality of ejection ports for ejecting the processing fluid. is there. The plurality of ejection ports can be provided so as to be distributed over a wide area facing the substrate. As a result, the processing fluid can be applied to a wide area on the lower surface of the substrate, which facilitates stable floating of the substrate. In addition, the substrate can be uniformly processed.

The invention according to claim 4 is characterized in that the contact portion of the rotating body is arranged so as to contact the peripheral portion of the upper surface of the substrate. It is a substrate processing apparatus. The contact portion may be, for example, three protrusions that come into contact with the substrate at three points.
By contacting the peripheral portion of the upper surface of the substrate, the contact portion can stably support the substrate as compared with the case where the contact portion contacts the center side of the upper surface of the substrate. For example, even when the processing fluid is applied so as to apply a force to a position slightly deviated from the center of gravity of the substrate, the substrate can be held at a constant position and orientation without losing the balance of the forces.

According to a fifth aspect of the present invention, the contact portions (22, 24) of the rotating body are formed in a ring shape along the peripheral edge of the upper surface of the substrate. It is a substrate processing apparatus. By configuring the ring-shaped contact portion to contact the substrate over the entire circumference, it is possible to prevent the processing liquid from entering inside the region where the contact portion contacts the substrate on the upper surface of the substrate. For example, by configuring the peripheral edge of the substrate so as to be located between the inner peripheral edge and the outer peripheral edge of the ring-shaped contact portion, even if the processing liquid wraps around the upper surface of the substrate, the entire surface of the upper surface of the substrate is processed. It can be kept out of contact with liquid.

According to a sixth aspect of the present invention, the contact portion (24) of the rotating body is formed so as to come into contact with a ring-shaped region which is set inside by a predetermined width from the peripheral edge of the upper surface of the substrate. The substrate processing apparatus according to claim 5, wherein According to the present invention, the processing fluid can be brought into contact with the upper surface of the substrate only within a predetermined width from the peripheral edge. For example, by causing the processing liquid to flow around the upper surface of the substrate, it is possible to perform processing such as etching and cleaning within a range of a predetermined width from the peripheral edge of the upper surface of the substrate.

The invention according to claim 7 further includes a guide member (23) provided on the side of the substrate pressed against the contact portion of the rotating body. The substrate processing apparatus described in 1. Even if the center of gravity of the substrate deviates from the center of rotation, the guide member can prevent the substrate from laterally moving (jumping out) during rotation. The invention according to claim 8 further comprises a facing member (12) having a lower facing surface (13a) facing the lower surface of the substrate, wherein the substrate processing apparatus according to any one of claims 1 to 7. is there.

According to the structure of the present invention, since the processing fluid flows between the lower surface of the substrate and the upper surface (lower facing surface) of the facing member, the substrate is floated by the circulating processing fluid and pressed against the contact portion. be able to. The invention according to claim 9 is characterized in that the lower facing surface of the facing member is provided with a stepped portion (14) which is recessed downward corresponding to the outer shape of the substrate. It is a processing device.

According to the present invention, the processing fluid can float the substrate while filling the inside of the recess formed by the stepped portion of the lower facing surface. At this time, in the step part,
The distance between the substrate and the facing member is narrow, and the pressure of the processing fluid flowing out between these is high. Therefore, the floating effect of the substrate is enhanced. That is, since the processing fluid can efficiently levitate the substrate with a small flow rate, the amount of processing fluid used can be saved.

According to a tenth aspect of the present invention, there is provided the substrate processing apparatus according to the eighth or ninth aspect, wherein the facing member is rotatably provided about the same axis as the rotating body. If the facing member does not rotate, the processing fluid flows only in the radial direction from the discharge port, and thus imparts rotational resistance to the rotating substrate while contacting the processing fluid. According to the configuration of the present invention, the facing member can be rotated about the same axis as the rotating body. Therefore, by rotating the facing member in the same direction as the substrate, the processing fluid can also flow in the radial direction while rotating in the same direction. Thereby, the rotational resistance of the substrate can be reduced. In this case, the substrate and the facing member may be rotated at the same rotation speed or may be rotated at different rotation speeds.

The invention according to claim 11 is the substrate processing apparatus according to any one of claims 1 to 10, characterized in that the substrate processing apparatus is an apparatus for removing unnecessary substances from the peripheral portion of the substrate. It is a device. The substrate processing apparatus according to any one of claims 1 to 10 can be suitably used for removing unnecessary substances from the peripheral portion of the substrate. Claim 1
The invention according to claim 2 is characterized in that the unnecessary material is an unnecessary thin film formed on a peripheral portion of the substrate.
The described substrate processing apparatus.

The substrate processing apparatus according to the eleventh aspect can be suitably used for removing an unnecessary thin film formed on the peripheral portion of the substrate. According to a thirteenth aspect of the present invention, there is provided a method of processing a substrate by supplying a processing fluid to the substrate, wherein an upper surface of the substrate is provided with respect to a contact portion provided on a rotating body rotatable about a substantially vertical axis. It is a substrate processing method including a step of discharging a processing fluid toward a lower surface of the substrate so as to be pressed.

According to the above substrate processing method,
The same effects as the described invention can be obtained.

[0021]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, referring to the accompanying drawings,
Embodiments of the present invention will be described in detail. Figure 1
It is a simplified sectional view showing a configuration of a substrate processing apparatus according to an embodiment of the present invention. This substrate processing apparatus is for performing a bevel etching process for removing an unnecessary thin film on the back surface (lower surface) or peripheral portion of a wafer W which is a processing target, and makes the wafer W substantially horizontal. A wafer holding mechanism 1 that holds the wafer W, a processing fluid supply mechanism 29 that supplies a processing fluid to the wafer W held by the wafer holding mechanism 1, and a circle that is rotated to face the wafer W held by the wafer holding mechanism 1 during processing. It has a plate-shaped blocking plate 2.

The wafer holding mechanism 1 has a chuck shaft 11 arranged along the vertical direction, and a wafer mounting table 12 provided on the upper end of the chuck shaft 11 and extending in a substantially horizontal direction. A recess 13 is formed on the upper surface of the wafer mounting table 12 so as to correspond to the outer shape (substantially circular) of the wafer W to be processed. The diameter of the recess 13 is slightly larger than the diameter of the wafer W, and the depth of the recess 13 is substantially equal to the thickness of the wafer W. The bottom of the recess 13 has a flat bottom surface 13.
It is a. The periphery of the recess 13 is a step portion 14.

A processing fluid supply pipe 15 extending from a processing liquid supply source and a nitrogen (N2) gas supply source is inserted into the chuck shaft 11. The processing liquid supply source can selectively supply the etching liquid and pure water. The upper end of the processing fluid supply pipe 15 is open inside the recess 13 and forms a discharge port 16. Also, the bottom surface 1 of the recess 13
A plurality of drains 13b capable of discharging the etching liquid and pure water in the recess 13 are formed in 3a, and are connected to a suction means such as a conbum (not shown) by piping.

At a position near the peripheral edge of the recess 13, a guide hole 1 that penetrates the wafer mounting table 12 in the thickness direction is formed.
8 are provided around the chuck shaft 11 at three equiangular intervals. Lifter pins 19 are provided so as to be vertically movable in the respective guide holes 18. Each lifter pin 19 is supported below by a common support body 20, and the lift drive unit 3
With 0, it is moved up and down via the support 20. Further, an umbrella-shaped substrate contact portion 19 a capable of contacting the lower surface of the wafer W is provided at the upper end portion of the lifter pin 19. Since the board contact portion 19a has a diameter larger than the diameter of the guide hole 18, the guide hole 18 can be closed when the lifter pin 19 moves downward. Further, at this time, since the substrate contact portion 19a has a predetermined height, the lower surface of the wafer W does not contact the bottom surface 13a of the recess 13.

The blocking plate 2 is supported by a rotary shaft 17 provided above it in the vertical direction with its axis aligned, and is rotated by a rotary drive unit 31 via the rotary shaft 17. In addition, the blocking plate 2 and the rotary shaft 17 are connected to the lift drive unit 3.
It is moved up and down by 2. The blocking plate 2 and the rotary shaft 17 are
At the time of processing the wafer W, etc., the blocking plate 2 is arranged so as to closely face and face the recess 13, but when the wafer W is taken in and out of the recess 13, it can be moved upward and retracted. . A hemispherical protrusion 21 is provided on the lower surface of the blocking plate 2.

FIG. 2 is a schematic bottom view of the blocking plate 2 of FIG. The protrusions 21 are provided at three positions around the rotation shaft 17 at equal angular intervals at positions facing the peripheral edge of the upper surface of the wafer W. FIG. 3 is an illustrative view showing a flow of substrate processing by the substrate processing apparatus of FIG. With the blocking plate 2 and the rotating shaft 17 retracted above the recess 13 and the upper ends of the lifter pins 19 projecting from the upper surface of the mounting table 12 by a predetermined height, the wafer W moves to the substrate contact portion 19a of the lifter pins 19. It is placed on top (FIG. 3 (a)).

After that, the substrate contact portion 19 of the lifter pin 19
Lifter pin 1 to the position where the lower surface of a comes into close contact with the bottom surface 13a.
9, the rotating shaft 17 is moved downward so that the blocking plate 2 approaches the recess 13 (FIG. 3B). At this time, the tips of the protrusions 21 and the upper surface of the wafer W are opposed to each other with a gap substantially corresponding to the thickness of the wafer W. At this time, the upper ends of the lifter pins 19 have a predetermined height above the bottom surface 13a (for example, about half the thickness of the wafer W).
The wafer W does not block the discharge port 16 at the center of the bottom surface 13a. At this time, the lower surface of the board contact portion 19a is in close contact with the bottom surface 13a, and the guide hole 1
8 is closed.

After that, the etching liquid is supplied from the processing liquid supply source, and the nitrogen gas as the inert gas is supplied from the nitrogen gas supply source. The etching liquid and the nitrogen gas are simultaneously discharged through the discharge port 16 through the processing fluid supply pipe 15. The wafer W is pushed up by the etching liquid and nitrogen gas, the lower surface of the wafer W floats away from the substrate contact portion 19a of the lifter pin 19, and the upper surface of the wafer W contacts the protrusion 21 (FIG. 3C). In this state, the recess 1
The upper surface of the wafer mounting table 12 and the lower surface of the wafer W except for the portion 3 are at substantially the same height. The etching liquid and the nitrogen gas flow laterally in the radial direction between the lower surface of the wafer W and the bottom surface 13a, and flow out to the outside from the gap between the wafer W and the wafer mounting table 12 near the step 14. At this time, the etching liquid also contacts the end surface of the wafer W.

Subsequently, as shown by the two-dot chain line arrow in FIG. 3C, the blocking plate 2 is rotated by rotating the rotating shaft 17. As a result, the wafer W is also rotated, and the lower surface and the end surface of the wafer W are satisfactorily etched. After the etching liquid is supplied for a certain period of time, the processing liquid is switched from the etching liquid to pure water, and the wafer W is cleaned. At this time, nitrogen gas is continuously supplied and is discharged from the discharge port 16 together with pure water.

After the cleaning is completed, the supply of pure water is stopped and only the nitrogen gas is discharged from the discharge port 16. The flow rate of the nitrogen gas is increased if necessary so that the wafer W floats and the upper surface of the wafer W is kept in contact with the protrusions 21. The pure water in the recess 13 is the bottom surface 13 of the recess 13.
The liquid W is discharged from the liquid discharge port 13b formed in a and the wafer W is dried. When the drying of the wafer W is completed, the rotation of the rotary shaft 17 is stopped, so that the rotation of the blocking plate 2 is stopped. As a result, the rotation of the wafer W is stopped. Then, the flow rate of the nitrogen gas discharged from the discharge port 16 is gradually reduced and the supply of the nitrogen gas is stopped. As a result, the flying height of the wafer W gradually decreases, and the wafer W is supported by the substrate contact portion 19a of the lifter pin 19 (the same state as in FIG. 3B).

Thus, the processing of one wafer W is completed. By such processing, unnecessary thin films formed on the lower surface and the end surface of the wafer W can be removed.
After the processing is completed, the rotation shaft 17 is moved so that the blocking plate 2 is retracted upward from the position close to the recess 13, and the processed wafer W is lifted up by the lifter pins 19 (FIG. 3A). (Same condition as above), after the processed wafer W is unloaded, the unprocessed wafer W is loaded and the above-described processing is repeated.

In the processing of the wafer W using such a substrate processing apparatus, only the protrusions 21 provided on the blocking plate 2 are in contact with each other on the upper surface of the wafer W. That is, the wafer W
Since there is no member in contact with the lower surface and the end surface of the wafer W, the lower surface and the end surface of the wafer W can be satisfactorily subjected to etching treatment with an etching solution, cleaning with pure water, and drying with nitrogen gas. At the time of etching treatment and cleaning, the etching liquid or pure water and nitrogen gas are simultaneously discharged toward the lower surface (back surface) of the wafer W, so that the amounts of the etching liquid and pure water to be used can be saved. That is, if only the etching liquid or pure water is discharged to float the wafer W and press the upper surface of the wafer W against the protrusion 21, a flow rate much higher than the minimum flow rate required for the etching process or cleaning of the wafer W is required. And Therefore, in order to float the wafer W, the flow rate of the etching liquid or pure water can be reduced by using nitrogen gas together.

By contacting the protrusion 21 at the peripheral portion of the upper surface of the wafer W, the wafer W can be supported more stably than in the case of contacting at the center side of the upper surface of the wafer W.
For example, even when the processing fluid (etching liquid, pure water, and nitrogen gas) is applied so as to apply a force to a position slightly deviated from the center of gravity of the wafer W, the balance of the force is not lost and the wafer W is kept constant. Can be held in any position and orientation. The processing fluid is the bottom surface and bottom surface 13 of the wafer W.
Since it flows between the wafer a and the wafer a, the wafer W can be floated by the circulating processing fluid and pressed against the protrusion 21.
Further, the processing fluid can float the wafer W while filling the inside of the recess 13. At this time, the step portion 14
In the above, the distance between the wafer W and the wafer mounting table 12 is narrow, and the pressure of the processing fluid flowing out between them is high. Therefore, the floating effect of the wafer W is enhanced. That is, since the processing fluid can efficiently levitate the wafer W with a small flow rate, the amount of processing fluid used can be saved.

FIG. 4 is a bottom view of the blocking plate of the substrate processing apparatus according to the first modification of the embodiment shown in FIG. 1 (FIG. 4 (a)).
And FIG. 4 is a sectional view (FIG. 4B). In the present embodiment, the ring member 22 is provided on the blocking plate 2 instead of the protrusion 21.
Are provided as contact members with the wafer W. The ring member 22 is configured to come into contact with the wafer W over the entire circumference along the peripheral edge of the upper surface of the wafer W. Further, the peripheral edge of the wafer W is configured to be located between the inner peripheral edge and the outer peripheral edge of the ring member 22. As a result, even when the processing fluid wraps around the upper surface of the wafer W,
It is possible to prevent the entire upper surface of the wafer W from coming into contact with the processing fluid. That is, it is possible to ensure that only the lower surface and the end surface of the wafer W are processed.

FIG. 5 is a bottom view of the blocking plate of the substrate processing apparatus according to the second modification of the embodiment shown in FIG. 1 (FIG. 5 (a)).
And FIG. 5 is a sectional view (FIG. 5B). In this embodiment, a guide ring 23 is further provided below the ring member 22 shown in FIG. In the bottom view (FIG. 5A), the outer peripheral edge of the ring member 22 and the outer peripheral edge of the guide ring 23 are aligned. The inner peripheral edge of the guide ring 23 is outside the peripheral edge of the wafer W that contacts the ring member 22. That is, the guide ring 23 is the ring member 2
It is arranged so as to surround the side of the wafer W that contacts the wafer 2.

Even if the center of gravity of the wafer W is deviated from the center of rotation, the guide ring 23 can restrict the wafer W from laterally moving (jumping out) during rotation. FIG. 6 is a bottom view of the blocking plate of the substrate processing apparatus according to the third modified example of the embodiment shown in FIG. 1 (FIG. 6A).
9A and 9B are cross-sectional views (FIG. 6B). In the present embodiment, the blocking plate 2 is provided with a ring member 24 as a contact member with the wafer W. The outer peripheral edge of the ring member 24 is located inward of the peripheral edge of the wafer W with which it comes into contact.

With this structure, the processing fluid can be brought into contact with the upper surface of the wafer W only within a predetermined width from the peripheral edge. For example, by allowing the etching liquid and pure water to flow around the upper surface of the wafer W, the wafer W
A range of a predetermined width from the peripheral edge of the upper surface can be etched and washed. In the above embodiment, the wafer mounting table 12 may be rotatably provided around the same axis as the blocking plate 2. In this case, the rotation resistance of the wafer W can be reduced. Because the wafer mounting table 1
If 2 does not rotate, the processing fluid flows only in the radial direction from the ejection port 16, and therefore imparts rotational resistance to the wafer W that rotates while contacting the processing fluid. By rotating the wafer mounting table 12 in the same direction on the same axis as the wafer W, the processing fluid can also flow in the radial direction while rotating in the same direction. Thereby, the rotation resistance of the wafer W can be reduced. in this case,
The wafer mounting table 12 and the wafer W may be rotated at the same rotation speed or different rotation speeds.

In the above embodiment, the substrate processing apparatus processes a semiconductor wafer, but the present invention is not limited to this, and a glass substrate for a liquid crystal display device, a glass substrate for a plasma display, a magnetic substrate. A substrate processing apparatus for performing processing using a processing fluid on various substrates such as optical disk substrates. When the substrate is heavy and it is difficult to float the substrate by using the processing liquid and the processing gas together, the substrate may be floated by applying only the processing liquid to the lower side of the substrate. Further, when it is difficult to float the substrate with only the processing gas, the drying may be performed in another step.

In the above embodiment, the number of the processing fluid discharge port 16 is one, but a plurality of discharge ports 16 may be provided. The plurality of ejection ports 16 can be provided so as to be distributed over a wide region facing the substrate such as the wafer W in the recess 13. As a result, the processing fluid can be applied to a wide area on the lower surface of the substrate, which facilitates stable floating of the substrate. In addition, the substrate can be uniformly processed.

In order to float the substrate such as the wafer W from the bottom surface 13a, instead of the lifter pins 19, projections fixed to the bottom surface 13a (for example, those capable of supporting the substrate at three points) may be provided. Also, the wafer bottom surface 13a
May be provided with a step so that a portion facing the peripheral edge of the substrate is high, and the wafer W may be supported by the peripheral edge of the step. Even in these cases, the ejection port 16 is not blocked by the substrate when the processing fluid is ejected.

Alternatively, in the above-described embodiment, the diameter of the recess 13 is larger than the diameter of the wafer W (substrate), but it may be smaller than that. In this case, the peripheral portion of the lower surface of the substrate is supported by the upper surface of the mounting table 12, and the recess 13 is closed by the substrate. Even in such a case, the ejection port 16 is not blocked by the substrate when the processing fluid is ejected. Further, in the above embodiment, the lift pin 1
The substrate contact portion 19a of No. 9 has an umbrella shape having a predetermined height. This is because the wafer W is floated from the bottom surface 13a by a predetermined height and the guide hole 18 is closed so that the processing fluid in the recess 13 does not unnecessarily flow out, but any material having a similar effect may be used. For example, the substrate contact portion 1 as shown in FIGS. 7 (a) and 7 (b).
It may be 91a and 192a. With this configuration, the contact surface between the board contact portions 191a and 192a and the guide hole 18 is a tapered surface, so that the hermeticity of the guide hole 18 is further improved.

In addition, various modifications can be made within the scope of the matters described in the claims.

[Brief description of drawings]

FIG. 1 is a simplified cross-sectional view showing a configuration of a substrate processing apparatus according to an embodiment of the present invention.

2 is a schematic bottom view of the barrier plate of FIG. 1. FIG.

FIG. 3 is an illustrative view showing a flow of substrate processing by the substrate processing apparatus of FIG.

4A and 4B are a bottom view and a cross-sectional view of a blocking plate of the substrate processing apparatus according to the first modified example of the embodiment shown in FIG.

5A and 5B are a bottom view and a sectional view of a blocking plate of a substrate processing apparatus according to a second modification of the embodiment shown in FIG.

6A and 6B are a bottom view and a sectional view of a blocking plate of a substrate processing apparatus according to a third modification of the embodiment shown in FIG.

FIG. 7 is a schematic sectional view showing a modification of the guide hole and the recess.

[Explanation of symbols]

1 Wafer holding mechanism 2 barrier plate 11 chuck axis 12 Wafer mounting table 13 recess 13a bottom 14 Step 15 Processing fluid supply piping 21 Protrusion 22, 24 Ring member 23 Guide member W wafer

Front page continuation (51) Int.Cl. ⁷ Identification code FI theme code (reference) H01L 21/306 JF term (reference) 2H096 AA25 AA27 CA14 DA10 JA02 3B201 AA02 AA03 AB34 BB22 BB92 BB93 CC12 5F043 AA01 EE07 EE08 EE35 FF10 GG10 5F046 MA06

Claims (13)

[Claims] 1. A substrate processing apparatus for supplying a processing fluid to a substrate to process the substrate, the rotating body having a contact portion that comes into contact with the upper surface of the substrate and rotatable about a substantially vertical axis. A substrate processing apparatus comprising: a processing fluid ejecting unit that ejects a processing fluid toward a lower surface of the substrate so as to press the substrate against the contact portion of the rotating body. 2. The substrate processing apparatus according to claim 1, wherein the processing fluid discharged by said processing fluid discharging means includes a processing liquid and a processing gas. 3. The substrate processing apparatus according to claim 1, wherein the processing fluid ejecting means has a plurality of ejection openings for ejecting the processing fluid. 4. The substrate processing apparatus according to claim 1, wherein the contact portion of the rotating body is arranged so as to come into contact with the peripheral portion of the upper surface of the substrate. 5. The substrate processing apparatus according to claim 4, wherein the contact portion of the rotating body is formed in a ring shape along the peripheral edge portion of the upper surface of the substrate. 6. The contact portion of the rotating body is formed so as to come into contact with a ring-shaped region set inside by a predetermined width from the peripheral edge of the upper surface of the substrate. Substrate processing equipment. 7. The substrate processing apparatus according to claim 1, further comprising a guide member provided on a side of the substrate pressed against the contact portion of the rotating body. 8. The counter member according to claim 1, further comprising a facing member having a lower facing surface facing the lower surface of the substrate.
The substrate processing apparatus according to any one of 1. 9. The substrate processing apparatus according to claim 8, wherein a stepped portion which is recessed downward is formed on the lower facing surface of the facing member so as to correspond to the outer shape of the substrate. 10. The substrate processing apparatus according to claim 8, wherein the facing member is provided rotatably around the same axis as the rotating body. 11. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is an apparatus for removing unnecessary substances from a peripheral portion of the substrate. 12. The substrate processing apparatus according to claim 11, wherein the unnecessary material is an unnecessary thin film formed on a peripheral portion of the substrate. 13. A method of processing a substrate by supplying a processing fluid to the substrate, wherein the upper surface of the substrate is pressed against a contact portion provided on a rotating body rotatable about a substantially vertical axis. And a step of discharging a processing fluid toward the lower surface of the substrate.