JP2008294476A - Development processing method and equipment of substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To remove an antireflection film formed on an underlayer of a resist film so as not to influence the resist film, in a photolithography step of a wafer. <P>SOLUTION: In a photolithography step of a wafer W, an antireflection film B having solubility in a developer solution is formed, and thereafter a resist film R is formed. At the time of development processing after exposure processing, a developer solution H1 is fed to the surface of the wafer W, to develop the resist film R. At the time of finishing the development of the resist film R, a developer solution H2 having lower concentration than that of the developer solution H1 is fed to the surface of the wafer W. Only the antireflection film B is dissolved and removed by feeding of this developer solution H2. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a substrate developing method and a developing apparatus.

  In a photolithography process in a semiconductor device manufacturing process, for example, a resist coating process in which a resist solution is applied to a film to be etched on the wafer surface to form a resist film, and the resist film on the wafer is exposed in a predetermined pattern. Processing, development processing for supplying a developer onto the exposed wafer to develop the resist film, etching processing for etching the film to be etched using a resist film having a predetermined pattern as a mask, and the like are sequentially performed.

  In addition, in the photolithography process, for example, in order to prevent light transmitted through the resist film during the exposure process from being reflected on the film to be etched and being exposed excessively, the resist film is exposed before the resist coating process. An antireflection film may be formed as a ground film.

  Thus, for example, when a base film is formed between the film to be etched and the resist film, it is necessary to separately etch the base film on the upper layer of the film to be etched before etching the film to be etched. This etching process of the base film is generally performed by converting the etching gas into a plasma in a chamber that accommodates the wafer and chemically reacting the surface of the base film with the plasma particles (see, for example, Patent Document 1). .) However, since the high energy plasma particles are used in the etching process of the base film, the damage to the resist film is large, and the surface of the resist film R in the upper layer is shaved, for example, as shown in FIG. In some cases, the side surface of the resist film R that should originally be rectangular is greatly inclined.

  When the side surface of the resist film R is inclined as described above, the etched film is etched to a size larger than a predetermined dimension when the etched film is etched, and a pattern having a desired line width / dimension is formed on the wafer. Disappear. In particular, in recent years when semiconductor devices are highly integrated and miniaturized, it is an important issue to realize a photolithography process with high dimensional accuracy.

  In addition, during the conventional etching process of the base film, the upper surface of the resist film R may be greatly shaved in the vertical direction. For this reason, the total film thickness of the resist film R and the base film becomes thin, and the resist film R may not sufficiently function as a mask for the film to be etched.

JP-A-8-97191

  The present invention has been made in view of the above points, and in the photolithography process of a substrate such as a wafer, the underlayer formed on the lower layer of the resist film is removed so as not to affect the resist film. It is an object of the present invention to provide a development processing method for a substrate and a development processing apparatus used in the development processing method.

  In order to achieve the above object, the invention according to claim 1 is directed to a developing process for a substrate in which a predetermined base film is formed under the resist film, and a developer is supplied onto the substrate to form a resist film on the substrate. And a step of supplying a predetermined processing liquid onto the substrate and then dissolving a portion of the base film exposed by the development of the resist film, the predetermined processing liquid on the substrate The supply is performed by moving the nozzle on the substrate while discharging the predetermined processing liquid from the nozzle using a nozzle having a discharge port formed over a region longer than the dimension in a specific direction of the substrate. It is characterized by being performed by.

  According to the present invention, since the base film is not etched by high energy plasma particles as in the prior art, there is little damage to the upper resist film, and the surface of the resist film is shaved during the base film removal process. This can be suppressed. As a result, the resist film functions as a mask with an accurate dimension during, for example, an etching process of the underlying etching target film after the removal of the base film, and a pattern with high dimensional accuracy can be formed on the substrate. In addition, since it is not necessary to perform the etching process of the base film as in the prior art, the time until pattern formation is shortened and the throughput of the substrate processing is improved. Further, the supply of the predetermined processing liquid onto the substrate is performed by discharging a predetermined processing liquid from the nozzle using a nozzle having an ejection port formed over a region longer than the dimension in a specific direction of the substrate. Therefore, the predetermined processing liquid can be supplied to the entire surface of the substrate in a short time and appropriately.

  When the development of the resist film by the developer progresses and the dissolution of the resist film reaches the surface of the base film, a predetermined processing liquid is supplied onto the substrate to start the dissolution of the base film. You may make it do. In such a case, switching from development of the resist film to dissolution of the base film can be appropriately performed.

  After developing the resist film on the substrate, the developer on the substrate may be removed, and then the predetermined processing solution may be supplied onto the substrate. In this case, since the development of the resist film can be stopped once and then the base film can be newly removed, excessive development of the resist film can be prevented more reliably.

  The supply of the predetermined processing solution and the supply of the developing solution at the time of developing the resist film may be performed using the same nozzle.

  The base film may be one that is soluble in the developer, and the predetermined processing solution may be a developer that is less soluble in the resist film than the developer. In this case, after developing the resist film with the developer, the base film can be removed by dissolving the base film with a developer having lower solubility than the developer. In this case, since the developing solution is used as a processing solution for dissolving the base film, the resist film is not altered. In addition, since a developer having low solubility in the resist film is used, the resist film is not excessively developed. By the way, when the resist film at the time of development has a density of the dissolved portion, after the resist film is dissolved, the developing solution in the dense portion has a lower developing ability than the developer in the sparse portion. Therefore, for example, when the base film is dissolved using the developer used for developing the resist film as it is, the solubility of the base film differs between a sparse part and a dense part of the resist film. According to the present invention, after the development of the resist film is finished, a fresh developer suitable for dissolving the base film is supplied, so that the dissolution of the base film can be performed within the substrate plane regardless of the density of the dissolved portion of the resist film. Can be done evenly. The developer used for developing the resist film is a mixture of a stock solution of the developer and pure water, and the predetermined processing solution has a temperature lower than at least the developer, or A developer having a lower concentration than the developer by mixing the stock solution and pure water may be used.

  In the invention described above, the base film may be an antireflection film that prevents reflection of light during exposure processing.

  According to another aspect, the present invention provides a development processing apparatus for developing a substrate on which a predetermined base film is formed below a resist film, and supplying a developer onto the substrate to provide a resist on the substrate. After developing the film, the nozzle is supplied to the substrate while supplying a predetermined processing liquid for dissolving the underlying film of the portion exposed by the development of the resist film, and discharging the predetermined processing liquid from the nozzle A nozzle that has a discharge hole formed over an area longer than a dimension in a specific direction of the substrate. The nozzle may also supply a developing solution for developing the resist film.

  According to the present invention, a circuit pattern with high dimensional accuracy can be formed on a substrate.

  Hereinafter, preferred embodiments of the present invention will be described. FIG. 1 is a plan view showing an outline of the configuration of a coating and developing processing system 1 in which a substrate processing photolithography process is performed, FIG. 2 is a front view of the coating and developing processing system 1, and FIG. 2 is a rear view of the processing system 1. FIG.

  As shown in FIG. 1, the coating and developing treatment system 1 is a cassette that carries, for example, 25 wafers W from the outside to the coating and developing treatment system 1 in a cassette unit, and carries a wafer W into and out of the cassette C. A station 2, a processing station 3 in which various processing apparatuses that perform predetermined processing in a single-wafer type in the coating and developing processing step are arranged in multiple stages, and an exposure apparatus (not shown) provided adjacent to the processing station 3 And the interface unit 4 that transfers the wafer W between the two.

  In the cassette station 2, a plurality of cassettes C can be placed in a line in a X direction (vertical direction in FIG. 1) at a predetermined position on the cassette placing table 5 serving as a placing portion. The cassette station 2 is provided with a wafer transfer body 7 that can move in the X direction on the transfer path 6. The wafer carrier 7 is also movable in the wafer arrangement direction (Z direction; vertical direction) of the wafers W accommodated in the cassette C, and is selective to the wafers W in each cassette C arranged in the X direction. Can be accessed.

  The wafer carrier 7 is rotatable in the θ direction around the Z axis, and can also access a temperature control device 50 and a transition device 51 belonging to a third processing device group G3 on the processing station 3 side described later.

  The processing station 3 adjacent to the cassette station 2 includes, for example, five processing device groups G1 to G5 in which a plurality of processing devices are arranged in multiple stages. A first processing device group G1 and a second processing device group G2 are arranged in this order from the cassette station 2 side on the X direction negative direction (downward direction in FIG. 1) side of the processing station 3. A third processing device group G3, a fourth processing device group G4, and a fifth processing device group G5 are sequentially arranged from the cassette station 2 side on the X direction positive direction (upward direction in FIG. 1) side of the processing station 3. Has been placed. A first transfer device 10 is provided between the third processing device group G3 and the fourth processing device group G4. The first transfer device 10 can selectively access the first processing device group G1, the third processing device group G3, and the fourth processing device group G4 to transfer the wafer W. A second transfer device 11 is provided between the fourth processing device group G4 and the fifth processing device group G5. The second transfer device 11 can selectively access the second processing device group G2, the fourth processing device group G4, and the fifth processing device group G5 to transfer the wafer W.

  As shown in FIG. 2, in the first processing unit group G1, a liquid processing apparatus that performs processing by supplying a predetermined liquid to the wafer W, for example, resist coating apparatuses 20, 21, and 22 that apply a resist solution to the wafer W. Bottom coating devices 23 and 24 for forming an antireflection film as a base film for preventing reflection of light during the exposure process are stacked in five stages in order from the bottom. In the second processing unit group G2, liquid processing units, for example, development processing units 30 to 34 for performing the development processing according to this embodiment are stacked in five stages in order from the bottom. In addition, chemical chambers 40 and 41 for supplying various processing liquids to the liquid processing apparatuses in the processing apparatus groups G1 and G2 are provided at the bottom of the first processing apparatus group G1 and the second processing apparatus group G2. Are provided.

  For example, as shown in FIG. 3, the third processing device group G3 includes a temperature control device 50, a transition device 51 for delivering the wafer W, and a high-precision temperature for heat-treating the wafer W under high-precision temperature control. The high-temperature heat treatment apparatuses 55 to 58 that heat-treat the preparation apparatuses 52 to 54 and the wafer W at a high temperature are stacked in nine stages in order from the bottom.

  In the fourth processing unit group G4, for example, a high-precision temperature control device 60, pre-baking devices 61 to 64 that heat-treat the resist-coated wafer W, and post-baking devices 65 to 65 that heat-process the developed wafer W. 69 are stacked in 10 steps from the bottom.

  In the fifth processing apparatus group G5, there are a plurality of heat treatment apparatuses that heat-treat the wafer W, such as high-precision temperature control apparatuses 70 to 73, and post-exposure baking apparatuses 74 to 79 that heat-treat the exposed wafer W in order from the bottom. It is stacked on the stage.

  As shown in FIG. 1, a plurality of processing devices are arranged on the positive side in the X direction of the first transfer device 10. For example, as shown in FIG. 3, an adhesion device 80 for hydrophobizing the wafer W. 81, heating devices 82 and 83 for heating the wafer W are stacked in four stages in order from the bottom. As shown in FIG. 1, for example, a peripheral exposure device 84 that selectively exposes only the edge portion of the wafer W is arranged on the positive side in the X direction of the second transfer device 11.

  As shown in FIG. 1, the interface unit 4 includes a first interface unit 100 and a second interface unit 101 in order from the processing station 3 side. In the first interface unit 100, a wafer carrier 102 is provided at a position corresponding to the fifth processing unit group G5. For example, buffer cassettes 103 and 104 are installed on both sides in the X direction of the wafer carrier 102. The wafer carrier 102 can access the processing apparatus and the buffer cassettes 103 and 104 in the fifth processing apparatus group G5. The second interface unit 101 is provided with a wafer transfer body 106 that moves on a transfer path 105 provided in the X direction. The wafer carrier 106 can move in the Z direction and can also rotate in the θ direction, and can access the exposure apparatus (not shown) adjacent to the second interface unit 101 and the buffer cassette 104. Therefore, the wafer W in the processing station 3 can be transferred to the exposure apparatus via the wafer transfer body 102, the buffer cassettes 103 and 104, and the wafer transfer body 106, and the wafer W after the exposure process is transferred to the wafer transfer body 106. , And can be transferred into the processing station 3 via the buffer cassette 104 and the wafer transfer body 102.

  Next, the configuration of the development processing apparatus 30 described above will be described in detail. Since the development processing apparatuses 31 to 34 have the same configuration as the development processing apparatus 30, the description thereof will be omitted. FIG. 4 is an explanatory view of a longitudinal section showing an outline of the configuration of the development processing apparatus 30, and FIG. 5 is an explanatory view of a transverse section of the development processing apparatus 30.

  As shown in FIG. 4, the development processing apparatus 30 includes a casing 30 a, and a spin chuck 120 that holds the wafer W is provided in the center of the casing 30 a. The spin chuck 120 has a horizontal upper surface, and a suction port (not shown) for sucking the wafer W, for example, is provided on the upper surface. The wafer W can be sucked onto the spin chuck 120 by suction from the suction port.

  The spin chuck 120 is provided with a chuck drive mechanism 121 for rotating and lifting the spin chuck 120, for example. The chuck drive mechanism 121 includes, for example, a rotation drive unit (not shown) such as a motor that rotates the spin chuck 120 around a vertical axis at a predetermined speed, and a lift drive unit such as a motor or cylinder that moves the spin chuck 120 up and down ( (Not shown). With this chuck drive mechanism 121, the wafer W on the spin chuck 60 can be moved up and down at a predetermined timing or rotated at a predetermined speed.

  Around the spin chuck 120, there is provided a cup 122 for receiving and collecting the liquid scattered or dropped from the wafer W. The cup 122 has, for example, an inner cup 123 that surrounds the periphery of the spin chuck 120, an outer cup 124 that covers the outside of the inner cup 123, and a bottom 125 that covers the lower surface of the inner cup 123 and the outer cup 124. ing. The inner cup 123 and the outer cup 124 can catch mainly the liquid splashing outward of the wafer W, and the bottom 125 collects the liquid falling from the inner walls of the inner cup 123 and the outer cup 124 and the wafer W. Can do.

  The inner cup 123 is formed, for example, in a substantially cylindrical shape, and its upper end portion is inclined toward the upper side inside. The inner cup 123 can be moved up and down by an elevating drive unit 126 such as a cylinder. For example, as shown in FIG. 5, the outer cup 124 is formed in a substantially cylindrical shape that is square when viewed from the top. As shown in FIG. 4, the outer cup 124 can be moved up and down by an elevating drive unit 127 such as a cylinder. The spin chuck 120 passes through the center of the bottom 125. Around the spin chuck 120, for example, an annular member 128 that blocks the flow of the liquid that has flowed from the front surface to the back surface of the wafer W is provided. The annular member 128 includes, for example, a top portion that is close to the back surface of the wafer W, and liquid that travels on the back surface of the wafer W can be blocked by the top portion. For example, the bottom 125 is connected to a discharge pipe 129 that communicates with a drainage section of a factory, for example, and the liquid recovered in the cup 122 can be discharged from the development pipe 30 to the outside.

  As shown in FIG. 5, a rail 140 extending along the Y direction is formed on the negative side of the cup 122 in the X direction (downward in FIG. 5). For example, the rail 140 is formed from the outside of the cup 122 in the Y direction negative direction (left direction in FIG. 5) to the outside of the cup 122 in the Y direction positive direction (right direction in FIG. 5). Two arms 141 and 142 are attached to the rail 140. A developer supply nozzle 143 is supported on the first arm 141. The first arm 141 is movable in the Y direction on the rail 140 by the drive mechanism 144, and transfers the developer supply nozzle 143 from the standby unit 145 installed outside the cup 122 to the inside of the cup 122. be able to. The first arm 141 can also be moved in the vertical direction by the drive mechanism 144, for example, and can move the developer supply nozzle 143 up and down.

  As shown in FIG. 4, the developer supply nozzle 143 communicates with a developer supply source 151, for example, installed outside the casing 30a by a developer supply pipe 150. A developer having a predetermined concentration is stored in advance in the developer supply source 151. The developer supply source 151 includes, for example, a temperature adjustment unit 152 and can supply a developer having a predetermined temperature to the developer supply nozzle 143. Further, the developer supply nozzle 143 communicates with a liquid supply source 154 that stores, for example, a predetermined liquid by a liquid supply pipe 153. In the present embodiment, pure water is stored in the liquid supply source 154. The liquid supply source 154 includes, for example, a temperature adjustment unit 155 and can supply pure water having a predetermined temperature to the developer supply nozzle 143. The developer supply pipe 150 and the liquid supply pipe 153 are respectively provided with valves 156 and 157 whose flow rates can be adjusted. The valves 156 and 157 allow the developer supply nozzle 143 to supply a predetermined flow rate of developer and pure liquid. Can supply water.

  Here, the configuration of the developer supply nozzle 143 will be described in detail. As shown in FIGS. 4 and 5, the main body 143 a of the developer supply nozzle 143 has an elongated shape along the X direction that is longer than the diameter of the wafer W, for example. As shown in FIG. 6, a developer storage chamber 160 that stores a developer introduced into the main body 143 a and a liquid storage chamber 161 that stores pure water are formed in the main body 143 a. As shown in FIG. 7, the developer storage chamber 160 and the liquid storage chamber 161 are formed from one end to the other end along the longitudinal direction of the main body 143a. As shown in FIG. 6, a developer introduction path 162 that communicates with the developer storage chamber 160 from the upper surface is formed in the upper portion of the main body 143a. The developer introduction path 162 is connected to the developer supply pipe 150. In addition, a liquid introduction path 163 communicating with the liquid storage chamber 161 from the upper surface is formed in the upper portion of the main body 143a. The liquid introduction path 163 is connected to the liquid supply pipe 153. With this configuration, the developer supplied into the developer supply nozzle 143 through the developer supply pipe 150 is stored in the developer storage chamber 160 through the developer introduction path 162, and the pure water supplied through the liquid supply pipe 153 is The liquid is stored in the liquid storage chamber 161 through the liquid introduction path 163.

  A mixing chamber 164 is formed below the developer storage chamber 160 and the liquid storage chamber 161 in the main body 143a. For example, as shown in FIG. 7, the mixing chamber 164 is formed from one end to the other end along the longitudinal direction of the main body 143a. For example, as shown in FIG. 6, the mixing chamber 164 is formed so that the longitudinal section viewed from the X direction is substantially circular. As shown in FIG. 7, the mixing chamber 164 communicates with the developer storage chamber 160 through a plurality of first communication passages 165 arranged at equal intervals along the longitudinal direction. In addition, the mixing chamber 164 communicates with the liquid storage chamber 161 through a plurality of second communication paths 166 arranged at equal intervals along the longitudinal direction. Therefore, the developer in the developer storage chamber 160 and the pure water in the liquid storage chamber 161 are mixed in the mixing chamber 164 through the communication paths 165 and 166.

  In the mixing chamber 164, as shown in FIG. 7, a stirring rod 167 having a diameter smaller than that of the mixing chamber 164 is provided. The stirring bar 167 has a spiral blade 167a formed on the surface thereof, and has a spiral shape. The stirring rod 167 extends, for example, between both end portions of the mixing chamber 164, and one end portion thereof is connected to, for example, a rotation driving unit 168 attached to a side surface of the main body 143a. The rotation drive unit 168 is provided with a prime mover such as a motor, for example, and can rotate the stirring rod 167 around the axis. Accordingly, when the developing solution and pure water flow into the mixing chamber 164, the stirring rod 167 can be rotated to stir the developing solution and pure water.

  A plurality of discharge ports 169 that open to the lower surface of the main body 143 a communicate with the lower portion of the mixing chamber 164. The discharge ports 169 are formed at equal intervals in a line between both ends of the main body 143a along the longitudinal direction of the main body 143a. As shown in FIG. 6, the diameter of the discharge port 169 is smaller than the diameter of the mixing chamber 164, and the flow path is narrow when flowing from the mixing chamber 164 to the discharge port 169.

  According to the developer supply nozzle 143 configured as described above, the developer introduced into the developer storage chamber 160 and the pure water introduced into the liquid storage chamber 161 are mixed in the mixing chamber 164 at a predetermined ratio. By stirring, a developing solution having a predetermined concentration and a predetermined temperature can be generated, and the generated developing solution can be uniformly discharged from each discharge port 169.

  Incidentally, a rinse liquid supply nozzle 180 is supported by the other second arm 142 attached to the rail 140 described above, as shown in FIG. The second arm 142 is movable in the Y direction on the rail 140 by, for example, a drive mechanism 181. The second arm 142 is also movable in the vertical direction by the drive mechanism 181. With this second arm 142, the rinsing liquid supply nozzle 180 can move from the standby part 182 provided outside the cup 122 on the positive side in the Y direction to above the center part of the wafer W in the cup 122. The rinsing liquid supply nozzle 180 communicates with a rinsing liquid supply source (not shown) installed outside the development processing apparatus 30 and can discharge the rinsing liquid supplied from the rinsing liquid supply source downward.

  Next, a photolithography process for the wafer W performed in the coating and developing treatment system 1 configured as described above will be described. First, when a cassette C containing a plurality of unprocessed wafers W is placed on the mounting table 5, one wafer W is taken out from the cassette C, and a third processing unit group G3 is taken by the wafer carrier 7. It is conveyed to the temperature control device 50. The wafer W transferred to the temperature control device 50 is adjusted to a predetermined temperature and then transferred to the bottom coating device 23 by the first transfer device 10. An antireflection film liquid material is applied to the wafer W transferred to the bottom coating apparatus 23, and an antireflection film B is formed on the surface of the wafer W as shown in FIG. This antireflection film B is formed by using a liquid material that is soluble in a developer used in a subsequent development process.

  The wafer W on which the antireflection film B is formed is sequentially transferred by the first transfer device 10 to the heating device 82, the high-temperature heat treatment device 55, and the high-precision temperature control device 60, and is subjected to predetermined processing in each device. . Thereafter, the wafer W is transferred to the resist coating apparatus 20, and a resist film R is formed on the antireflection film B ((b) of FIG. 8).

  The wafer W on which the resist film R has been formed is transferred to the pre-baking device 61 by the first transfer device 10, and then sequentially transferred to the peripheral exposure device 84 and the high-precision temperature controller 73 by the second transfer device 11. Thus, predetermined processing is performed in each device. Thereafter, the wafer W is transferred to the buffer cassette 104 by the wafer transfer body 102 of the first interface unit 100, and then transferred to an exposure apparatus (not shown) by the wafer transfer body 106 of the second interface unit 101. In this exposure apparatus (not shown), the wafer W is exposed to a predetermined pattern ((c) in FIG. 8). A hatched portion of the resist film R in FIG. 8C indicates an exposed portion. The wafer W after the exposure processing is transferred to the buffer cassette 103 via the buffer cassette 104 by the wafer transfer body 106 and the wafer transfer body 102. Thereafter, the wafer W is transferred to, for example, a post-exposure baking apparatus 74 by the wafer transfer body 102 and subjected to heat treatment, and then transferred to the high-precision temperature control apparatus 71 by the second transfer apparatus 11, and thereafter the development processing apparatus. 30.

  Here, the development processing performed in the development processing apparatus 30 will be described in detail. When the wafer W is carried into the development processing apparatus 30 by the second transfer device 11, the wafer W is attracted and held by the spin chuck 120 as shown in FIG. 4. Subsequently, as shown in FIG. 5, the developer supply nozzle 143 that has been waiting in the standby unit 145 moves to the Y direction positive direction side, and starts before the end of the wafer W in the Y direction negative direction as viewed from above. Move to position P1. Thereafter, the developer supply nozzle 143 is lowered and brought close to the height of the surface of the wafer W.

  Thereafter, the valve 156 and the valve 157 are opened, and the developer having a predetermined concentration from the developer supply source 151 and the pure water from the liquid supply source 154 are respectively supplied to the developer supply nozzle 143 at a predetermined flow rate. Note that the developer of the developer supply source 151 and the pure water of the liquid supply source 154 may be adjusted in advance to the same temperature by the temperature adjustment units 152 and 155. The flow rates of the developer and pure water supplied to the developer supply nozzle 143 are set so that the developer generated by mixing in the developer supply nozzle 143 has a desired concentration. The developer supplied to the developer supply nozzle 143 is temporarily stored in the developer storage chamber 160 and flows into the mixing chamber 164 through the first communication path 165. The pure water supplied to the developer supply nozzle 143 is temporarily stored in the liquid storage chamber 161 and flows into the mixing chamber 164 through the second communication path 166. In the mixing chamber 164 into which the developer and pure water have flown, the agitation rod 167 is rotated by the rotation drive unit 168, and the developer and pure water in the mixing chamber 164 are agitated and mixed. A developer H1 having a concentration of 1 is generated. The concentration of the developing solution H1 is selected as the optimal concentration for developing the resist film R.

  The developer H1 generated in the mixing chamber 164 stays in the mixing chamber 164 and is sufficiently stirred, and then flows into the lower discharge port 169 and is discharged from each discharge port 169 evenly. In this way, the developer H1 is discharged from the developer supply nozzle 143 in a substantially strip shape across both ends of the main body 143a.

  When the discharge of the developer H1 is started at the start position P1, the developer supply nozzle 143 moves from the start position P1 along the Y direction to the outside of the end portion on the Y direction positive side of the wafer W shown in FIG. Move to the stop position P2. By the movement of the developer supply nozzle 143, the developer H1 is supplied onto the wafer W, and a liquid film of the developer H1 is formed on the wafer W ((d) in FIG. 8). On the wafer W on which the liquid film of the developer H1 is formed, the exposed portion of the resist film R is dissolved in the developer H1 and the resist film R is developed. When the developer supply nozzle 143 moves to the stop position P2, for example, the valves 156 and 157 are closed, and the discharge of the developer H1 from the developer supply nozzle 143 is stopped. The developer supply nozzle 143 from which the supply of the developer H1 has been stopped is returned to, for example, the start position P1 where the discharge of the developer is started.

  When the developer supply nozzle 143 is returned to the start position P1 and a predetermined time elapses, the valves 156 and 157 are opened again, and the developer and pure water are supplied to the developer supply nozzle 143. The flow rates of the developer and pure water at this time are adjusted so that the developer H2 having a lower concentration than the developer H1 is generated in the developer supply nozzle 143. The concentration of the developer H2 is, for example, extremely low in solubility in the resist film R and dissolves only the antireflection film B, for example, less than half of the developer H1, for example, about 20% to 50% of the developer H1. Adjusted to When the developer H1 is about 0.26 mol / l, the developer H2 is desirably adjusted to about 0.06 to 0.11 mol / l.

  The developer supply nozzle 143 waits in a state where the developer H2 is discharged at the start position P1, and on the wafer W on which the developer H1 is accumulated, as shown in FIG. 9A, the resist film R When the dissolution of the exposed portion reaches the surface of the antireflection film B, the developer supply nozzle 143 moves to the Y direction positive direction side. The developer supply nozzle 143 moves from the start position P1 to the stop position P2 in the same manner as when the developer H1 is supplied. The developer H1 on the wafer W is replaced with the developer H2, and the developer W is placed on the wafer W. A liquid film of H2 is formed (FIG. 9B). With this developer H2, the exposed antireflection film B is dissolved and removed (FIG. 9C).

  The developer supply nozzle 143 stopped at the stop position P <b> 2 stops the discharge of the developer H <b> 2 and is returned to the standby unit 145. When the developing solution supply nozzle 143 is returned to the standby unit 145, for example, the rinse solution supply nozzle 180 that has been waiting in the standby unit 182 moves to above the center of the wafer W, and the inner cup 123 surrounds the periphery of the wafer W, for example. To rise. Thereafter, the wafer W is rotated by the spin chuck 120, and the rinse liquid is supplied from the rinse liquid supply nozzle 180 to the center of the wafer W. As a result, the developer H2 on the wafer W is washed away by the rinse liquid. When the rinsing liquid is supplied for a predetermined time and the cleaning of the wafer W is finished, the supply of the rinsing liquid is stopped, and then the wafer W is rotated at high speed and shaken and dried.

  Thereafter, the rotation of the wafer W is stopped, and the wafer W is transferred from the spin chuck 120 to the second transfer device 11 and unloaded from the development processing device 30. Thus, a series of development processing of the wafer W is completed.

  The wafer W that has undergone development processing is transferred to, for example, the post-baking device 65, transferred to the transition device 51 by the first transfer device 11, and then returned to the cassette C by the wafer transfer body 7. Thus, a series of photolithography steps in the coating and developing treatment system 1 are completed.

  According to the above embodiment, after developing the resist film R by supplying the developer H1 onto the wafer W during the development process, the developer H2 having a lower concentration than the developer H1 is supplied onto the wafer W. Since the antireflection film B is dissolved, there is no need to remove the antireflection film by plasma etching as in the prior art, and the antireflection film B can be removed without damaging the resist film R. it can. Further, since the new developer H2 for dissolving the antireflection film B is supplied onto the wafer W after the development of the resist film R is completed, the dissolution of the antireflection film B is started under the same conditions in the wafer W surface. The antireflection film B can be removed without any spots in the wafer W plane.

  Further, since the developer H2 that dissolves the antireflection film B is made less soluble in the resist film than the developer H1, it is possible to prevent the resist film R from being dissolved when the antireflection film B is dissolved. . Further, a discharge port 169 is formed in the developer supply nozzle 143 over a region longer than the dimension of the wafer W, and the developer supply nozzle 143 is discharged while discharging the developer H2 from the developer supply nozzle 143. Since the liquid film of the developing solution H2 is formed on the antireflection film B by moving the film on the wafer W, the supplying of the developing solution H2 to the entire surface of the wafer W can be appropriately performed in a short time.

  The developer supply nozzle 143 is provided with a mixing chamber 164 that mixes the developer in the developer storage chamber 160 and the pure water in the liquid storage chamber 161, so that the concentration of the developer discharged from the discharge port 169 is required. It can be adjusted and changed accordingly. As a result, the developer H1 is discharged when the resist film R is developed, and the developer H2 is discharged when the antireflection film B is dissolved. In addition, since the mixing rod 167 is provided in the mixing chamber 164 so that the stirring rod 167 can be actively rotated by the rotation drive unit 168, the developer and pure water flowing into the mixing chamber 164 are sufficiently stirred and mixed. Thus, developers H1 and H2 having no unevenness in density can be generated. As a result, a developer having no density unevenness is supplied onto the wafer W, so that the resist film R and the antireflection film B can be dissolved on the wafer W without any spots. Furthermore, since the stirring rod 167 has a spiral shape, the stirring effect can be further improved.

  The stirring rod 167 described in the above embodiment has a spiral shape formed by the spiral blades 167a attached to the surface. However, as shown in FIG. 10, a spiral groove is formed on the surface of the stirring rod 200. A spiral shape may be formed by forming 200a. As shown in FIG. 11, the stirring rod 210 may be formed of a porous material. In such a case, the developer and pure water permeate the porous material, and the developer and pure water are in the process of permeation. Can be mixed to obtain a sufficient stirring effect. At this time, a spiral blade may be attached to the stirring rod 210.

  In the above embodiment, the diameter of the discharge port 169 of the developer supply nozzle 143 is constant, but the diameter of the discharge port 220 gradually decreases from the mixing chamber 164 toward the lower surface of the main body 143 as shown in FIG. It may be made larger. In this case, the flow path flowing from the mixing chamber 164 to the discharge port 220 is once narrowed on the lower surface of the mixing chamber 164 and then gradually becomes wider toward the opening of the discharge port 220. By doing so, in the mixing chamber 164, a sufficient residence time of the developer can be ensured and mixing of the developer and pure water can be promoted. Further, the discharge pressure of the discharged developer can be lost in the discharge port 220. As a result, the collision of the developer with the wafer W is buffered, and the development defects due to the impact can be reduced.

  The first communication path 165 that connects the developer storage chamber 160 and the mixing chamber 164 described in the above embodiment, and the second communication path 166 that connects the liquid storage chamber 161 and the mixing chamber 164 are illustrated in FIG. 13, the inflow direction of the developer and pure water may be offset from the axial center of the stirring rod 230, and the inflowing developer and pure water may collide with the surface of the stirring rod 230. . In this case, the stirring rod 230 may be disposed in the mixing chamber 164 in a state where the stirring rod 230 does not have a rotation driving unit and can freely rotate. In such a case, since the developer and pure water that have flowed into the mixing chamber 164 rotate the stirring rod 230, the mixing chamber 164 can be sufficiently stirred.

  In the development process described in the above embodiment, the developing solution H1 is supplied to develop the resist film R, and then the developing solution H2 is supplied immediately to dissolve the antireflection film B. After the development of R is completed, the wafer W may be once rotated by the spin chuck 120, and after the developer H1 is shaken off, the developer H2 may be supplied. In such a case, excessive development of the resist film R by the developer H1 can be prevented.

  In the above embodiment, when the antireflection film B is dissolved, the developer H2 having a lower concentration than the developer H1 is supplied onto the wafer W. However, when the antireflection film B is dissolved, the developer H2 has a temperature higher than that of the developer H1. You may make it supply the low developing solution H2. In this case, for example, a developer is stored in the liquid supply source 154 instead of pure water, and the temperatures of the developers in the developer supply source 151 and the liquid supply source 154 are set to different temperatures by the temperature adjustment units 152 and 155. To do. At the time of developing the resist film R, developers having different temperatures are supplied from the developer supply source 151 and the liquid supply source 154 to the developer supply nozzle 143. In the mixing chamber 164 in the developing solution supply nozzle 143, developing solutions having different temperatures are mixed at a predetermined ratio to generate a developing solution H1 having a predetermined temperature, and this developing solution H1 is supplied to the wafer W. When the antireflection film B is dissolved, the ratio of the flow rate of each developer supplied from the developer supply source 151 and the liquid supply source 154 is changed. Thereby, the mixing ratio of the developer mixed by the developer supply nozzle 143 is changed, the developer H2 having a temperature lower than that of the developer H1 is generated, and the developer H2 is supplied onto the wafer W. Even in this case, since the developing solution H2 having low solubility in the resist film R is supplied onto the wafer W when the antireflection film B is dissolved, only the antireflection film B can be appropriately dissolved.

  In the above embodiment, the developer H2 supplied when the antireflection film B is dissolved has a lower concentration or temperature than the developer H1 supplied when the resist film R is developed. Both the concentration and the temperature may be low.

  The above embodiment shows an example of the present invention, and the present invention is not limited to this example and can take various forms. For example, the base film of the resist film R in the above embodiment is the antireflection film B, but may be another base film such as a different resist film. Further, the liquid supplied onto the wafer W when the antireflection film B is dissolved is the developer H2, but other processing liquids that dissolve only the antireflection film B may be used. Further, in the above embodiment, the wafer W is used as the substrate. However, the present invention is also applicable to other substrates such as an FPD (flat panel display) substrate, a mask substrate, and a reticle substrate. it can.

  The present invention is useful for removing a base film of a resist film in a photolithography process for processing a substrate.

It is a top view which shows the outline of a structure of the coating and developing treatment system in this Embodiment. FIG. 2 is a front view of the coating and developing treatment system of FIG. 1. FIG. 2 is a rear view of the coating and developing treatment system of FIG. 1. It is explanatory drawing of the longitudinal cross-section which shows the outline of a structure of a development processing apparatus. It is explanatory drawing of the cross section which shows the outline of a structure of a development processing apparatus. It is the longitudinal cross-sectional view seen from the X direction of the developing solution supply nozzle. It is the longitudinal cross-sectional view seen from the Y direction of the developing solution supply nozzle. It is explanatory drawing for showing the change of the state of a wafer along the processing process of a wafer. It is explanatory drawing for showing the change of the state of a wafer along the processing process of a wafer. It is a perspective view of the stirring rod which formed the groove | channel. It is the longitudinal cross-sectional view seen from the X direction of the developing solution supply nozzle provided with the porous stirring rod. It is the longitudinal cross-sectional view seen from the X direction of the developing solution supply nozzle provided with the discharge port which becomes gradually wide. FIG. 5 is a longitudinal sectional view of a developer supply nozzle viewed from the X direction in which the directions of first and second communication paths are changed. It is explanatory drawing which shows the state of a resist film when an antireflection film is etched by the conventional method.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Coating | development processing system 30 Development processing apparatus 143 Developer supply nozzle 160 Developer storage chamber 161 Liquid storage chamber 164 Mixing chamber 167 Stirring rod R Resist film B Antireflection film H1, H2 Developer W Wafer

Claims (9)

In development processing of a substrate in which a predetermined base film is formed under the resist film,
Supplying a developer on the substrate and developing the resist film on the substrate;
Thereafter, supplying a predetermined processing solution onto the substrate, and dissolving the underlying film exposed by the development of the resist film,
The supply of the predetermined processing liquid onto the substrate is performed by discharging the predetermined processing liquid from the nozzle using a nozzle having a discharge port formed over a region longer than the dimension in a specific direction of the substrate. A method for developing a substrate, which is performed by moving the nozzle on the substrate. When the development of the resist film by the developer progresses and the dissolution of the resist film reaches the surface of the base film, a predetermined processing liquid is supplied onto the substrate to start the dissolution of the base film. The method for developing a substrate according to claim 1, wherein: 3. The substrate according to claim 1, wherein after developing the resist film on the substrate, the developer on the substrate is removed, and then the predetermined processing solution is supplied onto the substrate. Development processing method. 4. The substrate development according to claim 1, wherein the supply of the predetermined processing solution and the supply of the developing solution at the time of developing the resist film are performed using the same nozzle. Processing method. For the base film, those having solubility in the developer are used,
5. The method for developing a substrate according to claim 1, wherein the predetermined processing solution is a developing solution having a lower solubility in the resist film than the developing solution. . The developer used for developing the resist film is a mixture of a stock solution of the developer and pure water,
6. The predetermined processing solution is a developer whose temperature is at least lower than that of the developer or whose concentration is lower than that of the developer by mixing the stock solution and pure water. The substrate development method described in 1. 7. The method for developing a substrate according to claim 1, wherein the base film is an antireflection film for preventing reflection of light during exposure processing. . A development processing apparatus for developing a substrate on which a predetermined base film is formed under a resist film,
A nozzle for supplying a predetermined processing solution for dissolving a portion of the underlying film exposed by developing the resist film after supplying a developing solution onto the substrate and developing the resist film on the substrate;
A drive mechanism for moving the nozzle on the substrate while discharging the predetermined processing liquid from the nozzle,
The development processing apparatus, wherein the nozzle has a discharge hole formed over a region longer than a dimension in a specific direction of the substrate. The development processing apparatus according to claim 8, wherein the nozzle also supplies a developing solution for developing the resist film.

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