JP5391014B2 - Substrate processing apparatus and substrate processing method - Google Patents

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate. Examples of substrates to be processed include semiconductor wafers, liquid crystal display substrates, plasma display substrates, FED (Field Emission Display) substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, and photomasks. Substrate, solar cell substrate and the like.

  In the manufacturing process of a semiconductor device, a liquid crystal display device or the like, a single-wafer type substrate processing apparatus for processing a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display device one by one is used. The single wafer type substrate processing apparatus includes, for example, a substrate holding mechanism that horizontally holds and rotates a substrate, and a processing liquid nozzle that supplies a processing liquid to the upper surface of the substrate held by the substrate holding mechanism ( For example, see Patent Document 1).

  In the processing of the substrate by the substrate processing apparatus, for example, the processing liquid is discharged from the processing liquid nozzle toward the center of the upper surface of the substrate while rotating the substrate by the substrate holding mechanism. The processing liquid discharged from the processing liquid nozzle is supplied to the center of the upper surface of the substrate, and spreads outward along the upper surface of the substrate under the centrifugal force generated by the rotation of the substrate. Thereby, the processing liquid is supplied to the entire upper surface of the substrate, and the upper surface of the substrate is processed by the processing liquid.

JP 2009-206359 A

  As described above, when the processing liquid is supplied to the center of the upper surface of the substrate while rotating the substrate, the supplied processing liquid spreads outward along the upper surface of the substrate by centrifugal force. That is, the processing liquid supplied to the central portion of the upper surface of the substrate spreads outward as an annular liquid film surrounding the central portion of the upper surface of the substrate. At this time, the liquid film of the processing solution spreads outward along the upper surface of the substrate while increasing the contact area with the substrate. For this reason, the supply flow rate of the processing liquid per unit area decreases as the distance from the center of the substrate increases. Therefore, even if the processing liquid is sufficiently supplied to the central portion of the upper surface of the substrate, the processing liquid may not be sufficiently supplied at a position away from the central portion. For example, when processing a large substrate such as a Φ450 mm semiconductor wafer, if the processing liquid supply flow rate is set in accordance with the center of the upper surface of the substrate, the processing liquid supplied to the substrate is radiated at the peripheral edge of the upper surface of the substrate. There may be multiple lines that spread out. For this reason, a place where the processing liquid is not supplied to the peripheral edge of the upper surface of the substrate occurs.

  When supplying the processing liquid to the center of the upper surface of the substrate while rotating the substrate, in order to sufficiently supply the processing liquid to the entire upper surface of the substrate, the supply flow rate of the processing liquid may be set according to the area of the substrate. Conceivable. However, when the supply flow rate of the processing liquid is set in this way, a large amount of the processing liquid is supplied to the center of the upper surface of the substrate. Therefore, the flow of the processing liquid may be disturbed at the center of the upper surface of the substrate. For example, the processing liquid may swell at the center of the upper surface of the substrate to form a plurality of concentric stripes, or the liquid may splash at the center of the upper surface of the substrate. Therefore, there is a possibility that the processing at the center of the upper surface of the substrate becomes non-uniform, or the members around the substrate and the substrate are contaminated by the liquid splash. Although it is conceivable to provide a rectifying member in order to suppress the disturbance of the processing liquid, in this case, if the rectifying member is not maintained in a clean state, foreign substances may move from the rectifying member to the substrate and the substrate may be contaminated. .

  Further, when the processing liquid is supplied to the central portion of the upper surface of the substrate while rotating the substrate, the processing liquid that has processed the region from the central portion to the peripheral portion is supplied to the peripheral portion of the upper surface of the substrate. Therefore, there is a risk that the processing liquid having a reduced processing capability may be supplied to the peripheral edge of the upper surface of the substrate. Therefore, there is a possibility that the processing of the substrate becomes non-uniform. Further, when a large substrate is rotated, the peripheral speed is greatly different between the rotation center of the substrate (the central portion of the substrate) and the peripheral portion of the substrate. Therefore, when the processing liquid is supplied to the central portion of the upper surface of the substrate while rotating a large substrate, the supply state of the processing liquid may be greatly different between the central portion and the peripheral portion of the substrate. Therefore, there is a possibility that the processing of the substrate becomes non-uniform. Furthermore, in order to rotate a large substrate, a drive source with a large output is required. However, since a drive source with a large output is usually large, the substrate processing apparatus becomes large.

  Accordingly, an object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of processing a substrate uniformly.

In order to achieve the above-mentioned object, the invention according to claim 1 includes a substrate holding means (3) for holding the substrate (W) in a non-rotating state, and a central portion of the main surface of the substrate held by the substrate holding means. A central discharge port (11, 311 and 411) for discharging fluid toward the intermediate discharge port (12, 212, 411) for discharging fluid outward toward the annular intermediate region (T1) surrounding the central portion of the main surface 312, 412), and nozzles (4, 204, 304) having peripheral discharge ports (13, 213, 313, 413) that discharge fluid outwardly toward an annular peripheral region (T 2) surrounding the intermediate region 404, 504), processing liquid supply means (17-21, 23-28, 31-34) for supplying processing liquid individually to the central discharge port, the intermediate discharge port, and the peripheral discharge port, and the processing liquid supply Control means, said central Outlet, said intermediate discharge port, in the order of the peripheral discharge openings, toward the substrate of the non-rotating state held by the substrate holding unit, the central discharge port, processing the intermediate discharge port, and the peripheral discharge port A substrate processing apparatus (1) including a control means (10) for discharging a liquid. In this section, the alphanumeric characters in parentheses represent corresponding components in the embodiments described later, but the scope of the claims is not limited by these reference numerals.

  According to this invention, the processing liquid is supplied from the processing liquid supply means to the nozzle by controlling the processing liquid supply means by the control means. The processing liquid supplied to the nozzle is supplied to the substrate held in a non-rotating state by the substrate holding means. More specifically, the processing liquid supplied to the nozzle is discharged from the central discharge port of the nozzle toward the central portion of the main surface of the substrate. Further, the processing liquid supplied to the nozzle is discharged outward from an intermediate discharge port of the nozzle toward an annular intermediate region (a part of the main surface) surrounding the central portion of the main surface of the substrate. Further, the processing liquid supplied to the nozzle is discharged outward from the peripheral discharge port of the nozzle toward an annular peripheral region (a part of the main surface) surrounding the intermediate region.

  The processing liquid discharged from the central discharge port is supplied to a predetermined position (a part of the central portion) of the main surface of the substrate and then spreads along the main surface of the substrate around the predetermined position. As a result, new processing liquid that has just been discharged from the central discharge port and whose processing capacity has not deteriorated is supplied to the central portion of the main surface of the substrate. Further, the processing liquid discharged from the intermediate discharge port is supplied to the intermediate region and then spreads outward along the main surface of the substrate. Therefore, the processing liquid in the intermediate region is pushed by the processing liquid discharged from the intermediate discharge port and discharged outward. Then, a new processing liquid that has just been discharged from the intermediate discharge port and whose processing capability has not deteriorated is supplied to the intermediate region. Similarly, the processing liquid discharged from the peripheral discharge port is supplied to the peripheral region and then spreads outward along the main surface of the substrate. Therefore, the processing liquid in the peripheral region is pushed by the processing liquid discharged from the peripheral discharge port and discharged around the substrate. Then, a new processing liquid that has just been discharged from the peripheral discharge port and whose processing capability has not deteriorated is supplied to the peripheral region.

  As described above, according to the present invention, the processing liquid is discharged from the central discharge port, the intermediate discharge port, and the peripheral discharge port, thereby moving the processing liquid held on the main surface of the substrate outward. It is possible to supply a new processing liquid whose capacity is not lowered to the central portion, the intermediate region, and the peripheral region of the main surface of the substrate. Therefore, by discharging the processing liquid from each discharge port in the order of the central discharge port, the intermediate discharge port, and the peripheral discharge port, while smoothly discharging the processing liquid from the central portion of the main surface of the substrate toward the peripheral edge, It is possible to supply a new processing solution whose processing capability is not lowered over the entire main surface of the substrate. As a result, the entire main surface of the substrate can be processed uniformly.

In the substrate processing apparatus, the central discharge port, the intermediate discharge port, and the peripheral discharge port discharge fluid toward the central portion, the intermediate region, and the peripheral region, respectively. A retraction unit that moves the nozzle between a first position and a second position where the nozzle is retreated from the substrate holding unit may be further included. In this case, the control means controls the retracting means until at least the discharge of the processing liquid from the peripheral discharge port is stopped after the discharge of the processing liquid from the central discharge port is started. The nozzle may be positioned at the first position.
According to a third aspect of the present invention, the intermediate discharge port may include a plurality of intermediate discharge ports arranged in an annular shape. Alternatively, as in a fourth aspect of the invention, the intermediate discharge port may include an annular intermediate discharge port that is continuous over the entire circumference.
The invention according to claim 5 further includes gas supply means (17-19, 22, 29, 30, 38-41) for supplying gas to the central discharge port, and the control means controls the gas supply means. The substrate processing apparatus according to claim 1, wherein after the discharge of the processing liquid from the central discharge port is stopped, the gas is discharged from the central discharge port.
According to the present invention, the gas supply unit is controlled by the control unit, so that the gas is supplied from the gas supply unit to the nozzle after the discharge of the processing liquid from the central discharge port is stopped. The gas supplied to the nozzle is discharged from the central discharge port toward the center of the main surface of the substrate. Since the gas discharged from the central discharge port is blown to the central portion of the main surface of the substrate, the processing liquid in the central portion of the main surface of the substrate is pushed by the gas and discharged outward. In addition, the gas discharged from the central discharge port spreads outward along the main surface of the substrate after being blown to the central portion of the main surface of the substrate, so that the periphery of the central portion (intermediate region and peripheral region) The processing liquid is pushed by the gas spreading outward and discharged outward.

  Thus, according to the present invention, the processing liquid is surely discharged from the central portion of the main surface of the substrate by the gas blown to the main surface of the substrate. Further, the processing liquid held around the central portion is discharged from the central discharge port in addition to the force that the processing liquid discharged from the intermediate discharge port and the peripheral discharge port flows outward along the main surface of the substrate. The generated gas receives the force of flowing outward. Accordingly, the processing liquid held around the central portion is surely discharged outward. Thereby, the processing liquid held on the main surface of the substrate can be surely discharged, and a new processing liquid whose processing capability has not deteriorated can be reliably supplied to the entire main surface of the substrate.

According to a sixth aspect of the present invention, the control means controls the treatment liquid supply means and the gas supply means to start discharge of the treatment liquid from the central discharge port and stop discharge of the treatment liquid from the central discharge port. , And the start of gas discharge from the central discharge port in this order, and then the start of discharge of processing liquid from the intermediate discharge port in a state where gas is discharged from the central discharge port, the intermediate discharge port 6. The substrate processing apparatus according to claim 5 , wherein the discharge of the processing liquid from, the start of discharge of the processing liquid from the peripheral discharge port, and the stop of discharge of the processing liquid from the peripheral discharge port are executed in this order.

  According to the present invention, after the discharge of the processing liquid from the central discharge port is stopped, the gas is discharged from the central discharge port. Then, the processing liquid is discharged from the intermediate discharge port in a state where gas is discharged from the central discharge port. Further, after the discharge of the processing liquid from the intermediate discharge port is stopped, the processing liquid is discharged from the peripheral discharge port in a state where the gas is discharged from the central discharge port. And in the state by which gas was discharged from the center discharge port, discharge of the process liquid from a peripheral discharge port is stopped.

  After the discharge of the processing liquid from the central discharge port is stopped, the processing liquid in the central portion of the main surface of the substrate is pushed by the gas discharged from the central discharge port and discharged outward. In addition, the processing liquid in the intermediate region after the discharge of the processing liquid from the intermediate discharge port is stopped by the force that the processing liquid itself flows outward or the force that the gas discharged from the central discharge port presses. Discharged. Further, the processing liquid in the peripheral area after the discharge of the processing liquid from the peripheral discharge port is stopped by the force that the processing liquid itself flows outward or the force that the gas discharged from the central discharge port presses. Ejected and scattered around the substrate.

  Thus, according to this invention, the main surface of the substrate is processed with the processing liquid while the processing liquid supplied to the main surface of the substrate is removed from the central portion of the main surface of the substrate toward the periphery. . Accordingly, almost or all of the processing liquid is removed from the entire main surface of the substrate almost simultaneously with the completion of the processing of the substrate with the processing liquid. Therefore, drying of the substrate can proceed simultaneously with the processing of the substrate with the processing liquid. In addition, since most or all of the processing liquid is removed from the entire main surface of the substrate, the substrate can be dried in a short time even when a drying process is performed after the processing of the substrate with the processing liquid.

The gas supply means, a flow rate adjusting means for adjusting the supply flow rate of gas into the central discharge port (30) may be free Ndei. In this case, the control means may control the flow rate adjusting means to increase the gas supply flow rate to the central discharge port as time elapses .
According to this configuration , the flow rate adjusting means is controlled by the control means, and the supply flow rate of the gas supplied from the central discharge port to the main surface of the substrate increases with time. Therefore, the processing liquid held on the main surface of the substrate is reliably moved to the peripheral side of the substrate with time. Thereby, a new processing liquid whose processing capability is not lowered can be supplied to the entire main surface of the substrate while smoothly discharging the processing liquid from the central portion of the main surface of the substrate toward the periphery.
According to a seventh aspect of the present invention, the processing liquid supply means may include a processing liquid supply flow rate adjusting means for adjusting a supply flow rate of the processing liquid to the nozzle. In this case, the control unit may control the processing liquid supply flow rate adjusting unit to increase the supply flow rate of the processing liquid to the nozzle with time.

Invention of claim 8, further comprising a nozzle rotating means for rotating the nozzle about an axis perpendicular to the substrate through the middle portion of the main surface (8), according to any one of claims 1-7 This is a substrate processing apparatus. According to a ninth aspect of the present invention, the control unit may control the nozzle rotating unit to increase the rotation speed of the nozzle with time while discharging the processing liquid from the nozzle.
According to this invention, while rotating the nozzle by the nozzle rotating means, fluid (for example, processing liquid or gas) can be discharged from the nozzle toward the substrate held in the non-rotated state by the substrate holding means. Since the nozzle rotates about an axis perpendicular to the substrate passing through the central portion of the main surface of the substrate, the fluid discharged from the nozzle is a ring surrounding the central portion of the main surface of the substrate or the central portion of the main surface of the substrate. Supplied to the area. Accordingly, the processing liquid can be reliably supplied to the entire region (the entire circumference) of the intermediate region and the peripheral region by rotating the nozzle by the nozzle rotating means while discharging the processing liquid from the intermediate discharge port and the peripheral discharge port. . Thereby, the processing liquid can be reliably supplied to the entire main surface of the substrate.

  The nozzle rotating means may rotate the nozzle at a constant rotational speed around an axis perpendicular to the substrate passing through the central portion of the main surface. In this case, the processing liquid is supplied at a uniform flow rate to the entire region (the entire circumference) of the intermediate region and the peripheral region by rotating the nozzle by the nozzle rotating means while discharging the processing solution from the intermediate discharge port and the peripheral discharge port. be able to. Thereby, an intermediate area and a peripheral area can be processed uniformly.

  The substrate processing apparatus may further include a rotation speed control means (10) for controlling the nozzle rotation means to increase the rotation speed of the nozzle with time. In this case, it is possible to supply a new processing liquid whose processing capability is not lowered to the entire main surface of the substrate while smoothly discharging the processing liquid from the central portion of the main surface of the substrate toward the periphery. More specifically, when the processing liquid is discharged from the nozzle while rotating the nozzle, the discharged processing liquid spreads outward by centrifugal force. Accordingly, when the processing liquid is discharged from the nozzle toward the substrate held by the substrate holding means while rotating the nozzle, the discharged processing liquid is supplied to the main surface of the substrate, and then the main surface of the substrate. It spreads outward along. Therefore, the processing liquid held on the main surface of the substrate is pushed by the processing liquid spreading outward and discharged from the substrate.

  Further, when the rotation speed of the nozzle is increased, the centrifugal force acting on the processing liquid increases, so that the processing liquid discharged from the nozzle spreads outward. Accordingly, when the rotation speed of the nozzle is increased with time, the supply position of the processing liquid to the substrate spreads outward with time. Therefore, by increasing the rotation speed of the nozzle so that the supply position of the processing liquid moves from the central part to the peripheral part of the main surface of the substrate, the processing liquid is smoothly supplied from the central part to the peripheral part of the main surface of the substrate. While being discharged, a new processing solution whose processing capability is not lowered can be supplied to the entire main surface of the substrate.

  Further, the processing liquid supply means may include a processing liquid flow rate adjusting means for adjusting a supply flow rate of the processing liquid to the nozzle. Further, the control means may control the processing liquid flow rate adjusting means to adjust the supply flow rate of the processing liquid to the nozzle over time. Furthermore, the nozzle is configured to discharge the fluid in an oblique direction toward the main surface of the substrate held by the substrate holding means (12, 212, 312, 412, 13, 213, 313). 413). In this case, it is possible to supply a new processing liquid whose processing capability is not lowered to the entire main surface of the substrate while smoothly discharging the processing liquid from the central portion of the main surface of the substrate toward the periphery.

  More specifically, for example, when the processing liquid is supplied to the inclined direction discharge port at a small flow rate, the supplied processing liquid is discharged so as to fall from the inclined direction discharge port. Therefore, the processing liquid discharged from the inclined direction discharge port is supplied to the main surface of the substrate without moving in the horizontal direction. On the other hand, when the processing liquid is supplied to the inclined direction discharge port at a large flow rate, for example, the supplied processing liquid is ejected vigorously from the inclined direction discharge port. Therefore, the processing liquid discharged from the tilt direction discharge port is supplied to the main surface of the substrate at a position away from the tilt direction discharge port with respect to the horizontal direction. Therefore, the central portion of the main surface of the substrate is adjusted by adjusting the supply flow rate of the processing liquid to the inclined direction discharge port with time so that the supply position of the processing liquid moves from the central portion to the peripheral portion of the main surface of the substrate. While the processing liquid is smoothly discharged from the edge toward the periphery, a new processing liquid whose processing capacity is not lowered can be supplied to the entire main surface of the substrate.

The invention according to claim 10 is a substrate holding step for holding the substrate in a non-rotating state, and a central processing liquid supply step for supplying the processing liquid to the central portion of the main surface of the substrate in parallel with the substrate holding step. (S101, S201) and after the central processing liquid supply step is executed, in parallel with the substrate holding step, the processing liquid is directed outward toward an annular intermediate region surrounding the central portion of the main surface. After the intermediate region processing liquid supply step (S104, S204) to be discharged and the intermediate region processing liquid supply step are executed, the processing is performed toward an annular peripheral region surrounding the intermediate region in parallel with the substrate holding step. And a peripheral region processing liquid supply step (S106, S206) for discharging the liquid outward. According to the present invention, it is possible to achieve the same effects as those described in relation to the invention of claim 1.

It is a mimetic diagram showing a schematic structure of a substrate processing apparatus concerning a 1st embodiment of this invention. It is a schematic diagram which shows schematic structure of the nozzle which concerns on 1st Embodiment of this invention. It is a bottom view of the nozzle which concerns on 1st Embodiment of this invention. It is a flowchart for demonstrating the example of a process of the board | substrate by the substrate processing apparatus which concerns on 1st Embodiment of this invention. It is a flowchart for demonstrating the chemical | medical solution process performed in the process example of the said board | substrate. It is a flowchart for demonstrating the rinse process performed in the process example of the said board | substrate. It is a side view which shows the state of a board | substrate when the example of a process of the said board | substrate is performed. It is a side view which shows the state of a board | substrate when the example of a process of the said board | substrate is performed. It is a side view which shows the state of a board | substrate when the example of a process of the said board | substrate is performed. It is a side view which shows the state of a board | substrate when the example of a process of the said board | substrate is performed. It is a side view which shows the state of a board | substrate when the example of a process of the said board | substrate is performed. It is a side view which shows the state of a board | substrate when the example of a process of the said board | substrate is performed. It is a graph which shows the relationship between the supply flow rate of nitrogen gas, and time. It is a bottom view of the nozzle which concerns on 2nd Embodiment of this invention. It is sectional drawing of the nozzle which concerns on 3rd Embodiment of this invention. It is a top view of the nozzle which concerns on 4th Embodiment of this invention. It is a schematic diagram which shows schematic structure of the nozzle which concerns on 5th Embodiment of this invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a schematic diagram showing a schematic configuration of a substrate processing apparatus 1 according to the first embodiment of the present invention.
The substrate processing apparatus 1 is a single-wafer type apparatus that processes substrates W such as semiconductor wafers one by one. The substrate processing apparatus 1 holds a substrate holding mechanism 3 (substrate holding means) that holds a single substrate W horizontally in a non-rotating state in a processing chamber 2 partitioned by a partition (not shown), and the substrate holding mechanism 3. And a nozzle 4 for discharging a fluid such as a processing liquid or gas toward the upper surface of the substrate W.

  The substrate holding mechanism 3 is configured to hold the substrate W horizontally in a non-rotating state with the upper side of the substrate W being opened. In this embodiment, the substrate holding mechanism 3 includes, for example, a support shaft 5 extending vertically, a disk-shaped base 6 attached horizontally to the upper end of the support shaft 5, and a substrate W horizontally above the base 6. And a plurality of holding members 7 to be held. The plurality of clamping members 7 are arranged at appropriate intervals on the circumference corresponding to the outer peripheral shape of the substrate W at the peripheral edge of the upper surface of the base 6. The plurality of clamping members 7 can cooperate to hold a single substrate W in a horizontal posture.

  The nozzle 4 is a member smaller than the substrate W held by the substrate holding mechanism 3 in plan view. The nozzle 4 is formed in a columnar shape having an outer diameter smaller than the outer diameter of the substrate W held by the substrate holding mechanism 3, for example. The nozzle 4 is disposed above the substrate holding mechanism 3 in a vertical posture. For example, the nozzle 4 is disposed at a height where the lower surface of the nozzle 4 is close to the upper surface of the substrate W held by the substrate holding mechanism 3. The central axis of the nozzle 4 is disposed on a vertical axis L1 that passes through the center of the substrate W, for example.

  The nozzle 4 is supplied with a fluid such as a processing liquid or a gas. As will be described later, the nozzle 4 has a plurality of ejection openings. The nozzle 4 discharges the supplied fluid from the plurality of discharge ports toward the upper surface of the substrate W held by the substrate holding mechanism 3. In addition, the nozzle 4 discharges fluid downward and obliquely downward toward the outside of the nozzle (a direction away from the central axis of the nozzle 4). Examples of the treatment liquid supplied to the nozzle 4 include a chemical liquid, a rinse liquid, a cleaning liquid, and an organic solvent. Moreover, as gas supplied to the nozzle 4, inert gas, such as argon and nitrogen gas, dry air, clean air, etc. are mentioned, for example.

  The nozzle 4 is coupled to a rotating mechanism 8 (nozzle rotating means) and a retracting mechanism 9. The rotation mechanism 8 can rotate the nozzle 4 around the vertical axis L1 passing through the center of the substrate W at a constant rotation speed. Further, the retracting mechanism 9 can move the nozzle 4 between the proximity position (the position shown in FIG. 1) and the retracting position. The proximity position is a position where the lower surface of the nozzle 4 is close to the upper surface of the substrate W held by the substrate holding mechanism 3. The retreat position is a position where the nozzle 4 is retreated above or to the side of the substrate holding mechanism 3. Examples of the rotation mechanism 8 include a drive source such as a motor. In addition to the drive source, the rotation mechanism 8 may include a gear mechanism having a plurality of gears, or a belt mechanism having a pair of pulleys and an endless belt stretched around these pulleys.

The substrate processing apparatus 1 includes a control unit 10 (control means). The substrate processing apparatus 1 is controlled by the control unit 10. More specifically, the components provided in the substrate processing apparatus 1 such as the substrate holding mechanism 3, the rotation mechanism 8, and the retracting mechanism 9 are controlled by the control unit 10.
FIG. 2 is a schematic diagram showing a schematic configuration of the nozzle 4. FIG. 3 is a bottom view of the nozzle 4.

  The nozzle 4 has a plurality of discharge ports formed on the lower surface of the nozzle 4. The plurality of discharge ports include a central discharge port 11, a plurality of intermediate discharge ports 12, and a plurality of peripheral discharge ports 13. A fluid is discharged from the central discharge port 11 toward the center of the upper surface of the substrate W. Further, fluid is discharged from each intermediate discharge port 12 toward an annular intermediate region T1 (a part of the upper surface of the substrate W) surrounding the central portion of the upper surface of the substrate W. Further, fluid is discharged from each peripheral discharge port 13 toward an annular peripheral region T2 (a part of the upper surface of the substrate W) surrounding the intermediate region T1.

  As shown in FIG. 3, the central discharge port 11 is arranged at a position slightly shifted from the center C <b> 1 on the lower surface of the nozzle 4. That is, the central discharge port 11 is disposed in the vicinity of the center C <b> 1 on the lower surface of the nozzle 4. The plurality of intermediate discharge ports 12 are arranged on a circumference that concentrically surrounds the center C <b> 1 of the lower surface of the nozzle 4. Similarly, the plurality of peripheral discharge ports 13 are arranged on a circumference that concentrically surrounds the center C <b> 1 of the lower surface of the nozzle 4. The plurality of peripheral discharge ports 13 are disposed outside the plurality of intermediate discharge ports 12.

  Further, the plurality of intermediate discharge ports 12 are arranged, for example, at equal intervals in the circumferential direction of the nozzle 4. Similarly, the plurality of peripheral discharge ports 13 are arranged, for example, at regular intervals in the circumferential direction of the nozzle 4. The interval between the intermediate discharge ports 12 adjacent in the circumferential direction (distance along the circumferential direction) and the interval between the peripheral discharge ports 13 adjacent in the circumferential direction (distance along the circumferential direction) are substantially the same. That is, the numbers of the intermediate discharge ports 12 and the peripheral discharge ports 13 are set so that the two intervals substantially coincide.

  The nozzle 4 is formed so that the fluid is discharged directly from the central discharge port 11. Further, the nozzle 4 is formed such that fluid is discharged obliquely downward from the intermediate discharge ports 12 and the peripheral discharge ports 13 toward the outside of the nozzle 4. More specifically, the nozzle 4 includes a central flow channel 14 connected to the central discharge port 11, an intermediate flow channel 15 connected to each intermediate discharge port 12, and a peripheral flow channel 16 connected to each peripheral discharge port 13. The part located in the vicinity of the central discharge port 11 in the central flow path 14 extends vertically. As a result, the fluid is discharged directly from the central discharge port 11. Moreover, the part located in the vicinity of each intermediate | middle discharge port 12 among the intermediate flow paths 15 inclines so that a lower side may be located outside. Similarly, the part located in the vicinity of each peripheral discharge port 13 in the peripheral flow path 16 is inclined so that the lower part is positioned outward. As a result, fluid is discharged obliquely downward from each intermediate discharge port 12 and each peripheral discharge port 13 toward the outside of the nozzle 4.

  The central discharge port 11 is arranged so that the liquid discharged from the central discharge port 11 is supplied near the center of the upper surface of the substrate W. Further, the inclination angle (first inclination angle) of a part of the intermediate flow path 15 located in the vicinity of each intermediate discharge port 12 is set so that the fluid discharged from each intermediate discharge port 12 is supplied to the intermediate region T1. Is set. In addition, the inclination angle (second inclination angle) of a part of the peripheral flow path 16 located in the vicinity of each peripheral discharge port 13 is set so that the fluid discharged from each peripheral discharge port 13 is supplied to the peripheral region T2. Is set. The second tilt angle is larger than the first tilt angle, for example. Therefore, the discharge angle of the fluid from each peripheral discharge port 13 is larger than the discharge angle of the fluid from each intermediate discharge port 12.

  As shown in FIG. 2, a central fluid supply pipe 17, an intermediate fluid supply pipe 18, and a peripheral fluid supply pipe 19 are connected to the nozzle 4. The central fluid supply pipe 17, the intermediate fluid supply pipe 18, and the peripheral fluid supply pipe 19 communicate with the central flow path 14, the intermediate flow path 15, and the peripheral flow path 16, respectively. The nozzle 4 is connected to the central chemical liquid supply pipe 20, the central rinse liquid supply pipe 21, and the central gas supply pipe 22 through the central fluid supply pipe 17. The nozzle 4 is connected to an intermediate chemical liquid supply pipe 23 and an intermediate rinse liquid supply pipe 24 via an intermediate fluid supply pipe 18. The nozzle 4 is connected to the peripheral chemical liquid supply pipe 25 and the peripheral rinse liquid supply pipe 26 via the peripheral fluid supply pipe 19.

  The nozzle 4 is supplied with a chemical liquid, a rinsing liquid, and an inert gas from a central chemical liquid supply pipe 20, a central rinse liquid supply pipe 21, and a central gas supply pipe 22 through the central fluid supply pipe 17, respectively. A central chemical liquid valve 27, a central rinse liquid valve 28, and a central gas valve 29 are interposed in the central chemical liquid supply pipe 20, the central rinse liquid supply pipe 21, and the central gas supply pipe 22, respectively. The central fluid supply pipe 17 is provided with a flow rate adjusting valve 30 (flow rate adjusting means).

  Further, the chemical liquid and the rinse liquid are supplied to the nozzle 4 from the intermediate chemical liquid supply pipe 23 and the intermediate rinse liquid supply pipe 24 through the intermediate fluid supply pipe 18, respectively. An intermediate chemical liquid valve 31 and an intermediate rinse liquid valve 32 are interposed in the intermediate chemical liquid supply pipe 23 and the intermediate rinse liquid supply pipe 24. Similarly, the nozzle 4 is supplied with the chemical liquid and the rinse liquid from the peripheral chemical liquid supply pipe 25 and the peripheral rinse liquid supply pipe 26 via the peripheral fluid supply pipe 19, respectively. A peripheral chemical liquid valve 33 and a peripheral rinse liquid valve 34 are interposed in the peripheral chemical liquid supply pipe 25 and the peripheral rinse liquid supply pipe 26.

  In this embodiment, the central fluid supply pipe 17, the intermediate fluid supply pipe 18, the peripheral fluid supply pipe 19, the central chemical liquid supply pipe 20, the central rinse liquid supply pipe 21, the intermediate chemical liquid supply pipe 23, the intermediate rinse liquid supply pipe 24, and the peripheral edge. The chemical liquid supply pipe 25, the peripheral rinse liquid supply pipe 26, the central chemical liquid valve 27, the central rinse liquid valve 28, the intermediate chemical liquid valve 31, the intermediate rinse liquid valve 32, the peripheral chemical liquid valve 33, and the peripheral rinse liquid valve 34 are used to supply the processing liquid. Means are configured. In this embodiment, the central fluid supply pipe 17, the central gas supply pipe 22, the central gas valve 29, and the flow rate adjustment valve 30 constitute gas supply means.

When the processing liquid is discharged from the central discharge port 11, the discharged processing liquid is supplied near the center of the upper surface of the substrate W and then spreads along the upper surface of the substrate W around the supply position (see FIG. 7). ). Thereby, the processing liquid discharged from the central discharge port 11 is supplied to the center of the upper surface of the substrate W including the center of the upper surface of the substrate W.
Further, when the processing liquid is discharged from the central discharge port 11 in a state where the processing liquid is present at the center of the upper surface of the substrate W, the processing liquid at the center of the upper surface of the substrate W is pushed away by the discharged processing liquid. In particular, the processing liquid around the processing liquid supply position (position where the processing liquid is first supplied) is surely pushed away by the processing liquid spreading along the upper surface of the substrate W. Therefore, by continuously discharging the processing liquid from the central discharge port 11, the processing liquid at the central portion of the upper surface of the substrate W is successively replaced with new processing liquid, and the processing liquid is applied to the central portion of the upper surface of the substrate W. Can be supplied.

  Furthermore, since the central discharge port 11 is disposed at a position slightly shifted from the center C1 of the lower surface of the nozzle 4, when the processing liquid is discharged from the central discharge port 11 while rotating the nozzle 4 by the rotation mechanism 8, The discharged processing liquid spreads outward by centrifugal force. For this reason, the processing liquid discharged from the central discharge port 11 is supplied to the substrate W and then spreads outward along the upper surface of the substrate W. Accordingly, the processing liquid at the center of the upper surface of the substrate W moves outward without stagnation on the substrate W. As a result, the processing liquid at the central portion of the upper surface of the substrate W including the supply position of the processing liquid can be supplied to the central portion of the upper surface of the substrate W while the processing liquid is successively replaced with new processing liquid.

  Further, when the inert gas is discharged from the central discharge port 11, the discharged inert gas is sprayed on the center portion of the upper surface of the substrate W. The inert gas spreads outward between the upper surface of the substrate W and the lower surface of the nozzle 4. Therefore, when the inert gas is discharged from the central discharge port 11, the inert gas is discharged radially between the substrate W and the nozzle 4. The inert gas spreads outward along the upper surface of the substrate W. Thereby, the inert gas is supplied to the entire upper surface of the substrate W.

  Further, when the processing liquid is discharged from each intermediate discharge port 12, the discharged processing liquid is supplied to the intermediate region T1. Further, since the nozzle 4 is formed so that the processing liquid is discharged outward from each intermediate discharge port 12, the processing liquid supplied to the intermediate region T <b> 1 is outward along the upper surface of the substrate W. spread. Further, since the plurality of intermediate discharge ports 12 are arranged at equal intervals in the circumferential direction, when the treatment liquid is discharged from each intermediate discharge port 12, the treatment liquid jumps in the circumferential direction with respect to the intermediate region T1. Supplied. Therefore, the processing liquid can be supplied to the entire region (all circumferences) of the intermediate region T1 by discharging the processing liquid from each intermediate discharge port 12 while rotating the nozzle 4 by the rotation mechanism 8. Furthermore, the processing liquid can be supplied at a uniform flow rate to the entire area of the intermediate region T1 by discharging the processing liquid from each of the intermediate discharge ports 12 while rotating the nozzle 4 at a constant rotation speed by the rotation mechanism 8. .

  Similarly, when the processing liquid is discharged from each peripheral discharge port 13, the discharged processing liquid is supplied to the peripheral region T2. Further, since the nozzle 4 is formed so that the processing liquid is discharged outward from each peripheral discharge port 13, the processing liquid supplied to the peripheral region T <b> 2 is outward along the upper surface of the substrate W. spread. Therefore, the processing liquid discharged from each peripheral discharge port 13 is supplied to the peripheral region T <b> 2 and then scattered around the substrate W. Further, since the plurality of peripheral discharge ports 13 are arranged at equal intervals in the circumferential direction, when the processing liquid is discharged from each peripheral discharge port 13, the processing liquid jumps in the peripheral direction with respect to the peripheral region T <b> 2. Supplied. Therefore, the processing liquid can be supplied to the entire area (the entire circumference) of the peripheral area T2 by discharging the processing liquid from the peripheral discharge ports 13 while rotating the nozzle 4 by the rotating mechanism 8. Further, the processing liquid can be supplied to the entire peripheral region T2 at a uniform flow rate by discharging the processing liquid from each peripheral discharge port 13 while rotating the nozzle 4 at a constant rotational speed by the rotation mechanism 8. .

  As described above, the processing liquid discharged from the central discharge port 11 is supplied to the central portion of the upper surface of the substrate W. Further, when the processing liquid is discharged from each intermediate discharge port 12 while rotating the nozzle 4 at a constant rotation speed by the rotation mechanism 8, the discharged processing liquid is supplied to the entire area of the intermediate region T1 at a uniform flow rate. . The supply flow rate of the processing liquid per unit area supplied to the intermediate region T <b> 1 is set to be approximately equal to the supply flow rate of the processing liquid per unit area supplied to the central portion of the upper surface of the substrate W. Similarly, when the processing liquid is discharged from each peripheral discharge port 13 while rotating the nozzle 4 at a constant rotational speed by the rotation mechanism 8, the discharged processing liquid is supplied to the entire peripheral region T2 at a uniform flow rate. The The supply flow rate of the processing liquid per unit area supplied to the peripheral region T2 is set to be approximately equal to the supply flow rate of the processing liquid per unit area supplied to the central portion of the upper surface of the substrate W. That is, in this embodiment, the processing liquid is supplied at a uniform flow rate at any location on the upper surface of the substrate W.

  FIG. 4 is a flowchart for explaining a processing example of the substrate W by the substrate processing apparatus 1 according to the first embodiment of the present invention. FIG. 5 and FIG. 6 are flowcharts for explaining the chemical solution processing and the rinsing processing performed in the processing example of the substrate W, respectively. 7 to 12 are side views showing the state of the substrate W when the processing example of the substrate W is performed. FIG. 13 is a graph showing the relationship between the supply flow rate of nitrogen gas and time. Hereinafter, processing examples of the substrate W will be described with reference to FIGS. 1, 2, and 4. Moreover, in the following description, FIGS. 5-13 is referred suitably.

In this processing example of the substrate W, the unprocessed substrate W is carried into the processing chamber 2 by a transport mechanism (not shown). Then, the substrate W is transferred to the substrate holding mechanism 3 with the surface, which is a device formation surface, facing upward, for example, with the nozzle 4 being disposed at the retracted position. After the unprocessed substrate W is transferred to the substrate holding mechanism 3, the nozzle 4 is disposed in the proximity position.
Next, a chemical treatment for treating the substrate W with a chemical solution is performed (step S1). More specifically, while the nozzle 4 is rotated at a constant rotational speed by the rotation mechanism 8, the central chemical liquid valve 27 is opened and the discharge of the chemical liquid from the central discharge port 11 is started (step S101. FIG. 5). As shown in FIG. 7, the chemical solution discharged from the central discharge port 11 is supplied near the center of the upper surface of the substrate W, and then spreads along the upper surface of the substrate W around the supply position. As a result, a new chemical solution discharged from the central discharge port 11 is supplied to the entire area of the central portion of the upper surface of the substrate W. When the chemical liquid is supplied to the center of the upper surface of the substrate W over a predetermined time, the central chemical valve 27 is closed and the discharge of the chemical liquid from the central discharge port 11 is stopped (step S102, see FIG. 5). ).

  After the discharge of the chemical solution from the central discharge port 11 is stopped, the central gas valve 29 is opened, and the discharge of nitrogen gas from the central discharge port 11 is started (step S103, see FIG. 5). Further, the opening degree of the flow rate adjusting valve 30 is adjusted by the control unit 10, and the supply flow rate of nitrogen gas to the central discharge port 11 is increased with time. The supply flow rate of nitrogen gas to the central discharge port 11 may be increased stepwise as time elapses, or may be increased linearly or curvedly as time elapses. For example, when the processing liquid (chemical liquid) is sequentially discharged from the central discharge port 11, the intermediate discharge port 12, and the peripheral discharge port 13, as shown in FIG. As the discharge of the treatment liquid (chemical solution) is started, the supply flow rate of nitrogen gas to the central discharge port 11 may be increased stepwise (see the one-dot chain line) or continuously (see the two-dot chain line). .

  As shown in FIG. 8, the nitrogen gas discharged from the central discharge port 11 is sprayed to the center of the upper surface of the substrate W and then spreads outward along the upper surface of the substrate W. Therefore, the chemical solution at the center of the upper surface of the substrate W is pushed by the nitrogen gas discharged from the central discharge port 11 and discharged outward. As a result, the chemical remaining in the central portion of the upper surface of the substrate W after the discharge of the chemical from the central discharge port 11 is stopped is discharged toward the periphery of the substrate W. Therefore, the chemical solution is removed from the center of the upper surface of the substrate W.

  After the chemical solution is removed from the center of the upper surface of the substrate W, the intermediate chemical solution valve 31 is opened while the nozzle 4 is rotated at a constant rotation speed, and the discharge of the chemical solution from the intermediate discharge port 12 is started. (Step S104, see FIG. 5). As shown in FIG. 9, the chemical liquid discharged from the intermediate discharge port 12 is supplied to the intermediate region T <b> 1 and then spreads outward along the upper surface of the substrate W. Therefore, even if the chemical liquid discharged from the central discharge port 11 or the chemical liquid previously discharged from the intermediate discharge port 12 remains in the intermediate region T1, the chemical liquid discharged from the intermediate discharge port 12 It moves outward by the force flowing outward. Further, since the discharge of the nitrogen gas from the central discharge port 11 is continued, the chemical solution remaining in the intermediate region T1 is pushed by the nitrogen gas and moves outward. Accordingly, the chemical liquid remaining in the intermediate area T1 is discharged outward, while new chemical liquid discharged from the intermediate discharge port 12 is supplied to the entire area of the intermediate area T1. Then, when the chemical solution is supplied to the intermediate region T1 over a predetermined time, the intermediate chemical valve 31 is closed, and the discharge of the chemical solution from the intermediate discharge port 12 is stopped (step S105, see FIG. 5).

  As shown in FIG. 10, the chemical liquid remaining in the intermediate region T <b> 1 after the discharge of the chemical liquid from the intermediate discharge port 12 is stopped by the force that the chemical liquid itself flows outward or the force that is pushed by the nitrogen gas. Move to. Further, in the chemical processing in the processing example of the substrate W, the supply flow rate of nitrogen gas to the central discharge port 11 is increased with the passage of time, so that the chemical on the substrate W is reliably transferred to the peripheral side of the substrate W with the passage of time. Moved to. Therefore, the chemical solution remaining in the intermediate region T1 surely moves outward. Accordingly, the chemical liquid remaining in the intermediate region T1 after the discharge of the chemical liquid from the intermediate discharge port 12 is stopped is discharged toward the peripheral edge of the substrate W. Therefore, the chemical solution is reliably removed from the intermediate region T1.

  After the chemical solution is removed from the intermediate region T1, the peripheral chemical solution valve 33 is opened while the nozzle 4 is rotated at a constant rotational speed, and the discharge of the chemical solution from the peripheral discharge port 13 is started (step S106). (See FIG. 5). As shown in FIG. 11, the chemical liquid discharged from the peripheral discharge port 13 is supplied to the peripheral region T <b> 2 and then spreads outward along the upper surface of the substrate W. Therefore, even if the chemical liquid discharged from the central discharge port 11 or the chemical liquid previously discharged from the peripheral discharge port 13 remains in the peripheral region T2, the chemical liquid discharged from the peripheral discharge port 13 It moves outward by the force flowing outward. Furthermore, since the discharge of nitrogen gas from the central discharge port 11 is continued, the chemical solution remaining in the peripheral region T2 is pushed by the nitrogen gas and moves outward. Accordingly, the chemical liquid remaining in the peripheral area T2 is discharged around the substrate W, while the new chemical liquid discharged from the peripheral discharge port 13 is supplied to the entire area of the peripheral area T2.

  As described above, in the chemical solution processing in the processing example of the substrate W, a new chemical solution whose processing capability is not lowered is sequentially supplied to the center of the upper surface of the substrate W, the intermediate region T1, and the peripheral region T2. Thereby, the chemical solution is supplied to the entire upper surface of the substrate W, and the chemical solution treatment is performed on the entire upper surface of the substrate W. Then, when the chemical liquid is supplied to the peripheral region T2 over a predetermined time, the peripheral chemical liquid valve 33 is closed and the discharge of the chemical liquid from the peripheral discharge port 13 is stopped (step S107, see FIG. 5). Thereafter, the central gas valve 29 is closed, and the discharge of nitrogen gas from the central discharge port 11 is stopped (step S108, see FIG. 5).

  As shown in FIG. 12, the chemical liquid remaining in the peripheral region T2 after the discharge of the chemical liquid from the peripheral discharge port 13 is stopped by the force that the chemical liquid itself flows outward or the force that is pushed by nitrogen gas. Move to. Further, in the chemical processing in the processing example of the substrate W, the supply flow rate of nitrogen gas to the central discharge port 11 is increased with the passage of time, so that the chemical on the substrate W is reliably transferred to the peripheral side of the substrate W with the passage of time. Moved to. Therefore, the chemical solution remaining in the peripheral region T2 surely moves outward. As described above, in the chemical liquid processing in the processing example of the substrate W, the chemical liquid supplied to the upper surface of the substrate W is removed from the central portion of the upper surface of the substrate W toward the peripheral edge, and the upper surface of the substrate W is processed with the chemical liquid. It will be done. Therefore, almost or all of the chemical solution is removed from the entire upper surface of the substrate W almost simultaneously with the completion of the chemical solution treatment.

  Next, a rinsing process for rinsing the substrate W with a rinsing liquid is performed (step S2). More specifically, the central rinse liquid valve 28 is opened while the nozzle 4 is rotated at a constant rotational speed by the rotation mechanism 8 and discharge of the rinse liquid from the central discharge port 11 is started (step S201). (See FIG. 6). As shown in FIG. 7, the rinse liquid discharged from the central discharge port 11 is supplied near the center of the upper surface of the substrate W and then spreads along the upper surface of the substrate W around the supply position. As a result, the new rinse liquid discharged from the central discharge port 11 is supplied to the entire area of the center portion of the upper surface of the substrate W. Then, when the rinsing liquid is supplied to the central portion of the upper surface of the substrate W over a predetermined time, the central rinsing liquid valve 28 is closed, and the discharge of the rinsing liquid from the central discharge port 11 is stopped (step S202). (See FIG. 6).

  After the discharge of the rinsing liquid from the central discharge port 11 is stopped, the central gas valve 29 is opened, and the discharge of nitrogen gas from the central discharge port 11 is started (step S203, see FIG. 6). Further, the opening degree of the flow rate adjusting valve 30 is adjusted by the control unit 10, and the supply flow rate of nitrogen gas to the central discharge port 11 is increased with time. The supply flow rate of nitrogen gas to the central discharge port 11 may be increased stepwise as time elapses, or may be increased linearly or curvedly as time elapses. For example, when the processing liquid (rinse liquid) is sequentially discharged from the central discharge port 11, the intermediate discharge port 12, and the peripheral discharge port 13, the intermediate discharge port 12 and the peripheral discharge port 13, as shown in FIG. As the discharge of the treatment liquid (rinse liquid) starts, the supply flow rate of the nitrogen gas to the central discharge port 11 is increased stepwise (see the one-dot chain line) or continuously (see the two-dot chain line). Also good.

  As shown in FIG. 8, the nitrogen gas discharged from the central discharge port 11 is sprayed to the center of the upper surface of the substrate W and then spreads outward along the upper surface of the substrate W. Therefore, the rinse liquid at the center of the upper surface of the substrate W is pushed by the nitrogen gas discharged from the central discharge port 11 and discharged outward. As a result, the rinse liquid remaining in the center of the upper surface of the substrate W after the discharge of the rinse liquid from the central discharge port 11 is stopped is discharged toward the periphery of the substrate W. Accordingly, the rinsing liquid is removed from the center of the upper surface of the substrate W.

  After the rinsing liquid is removed from the center of the upper surface of the substrate W, the intermediate rinsing liquid valve 32 is opened while the nozzle 4 is rotated at a constant rotational speed, and the rinsing liquid is discharged from the intermediate discharge port 12. The process is started (step S204, see FIG. 6). As shown in FIG. 9, the rinse liquid discharged from the intermediate discharge port 12 is supplied to the intermediate region T <b> 1 and then spreads outward along the upper surface of the substrate W. Therefore, even if the rinse liquid discharged from the central discharge port 11 or the rinse liquid discharged first from the intermediate discharge port 12 remains in the intermediate region T1, these rinse liquids are discharged from the intermediate discharge port 12. The rinse liquid moves outward due to the outward force. Furthermore, since the discharge of the nitrogen gas from the central discharge port 11 is continued, the rinse liquid remaining in the intermediate region T1 is pushed by the nitrogen gas and moves outward. Accordingly, the rinse liquid remaining in the intermediate area T1 is discharged outward, while new rinse liquid discharged from the intermediate discharge port 12 is supplied to the entire area of the intermediate area T1. When the rinsing liquid is supplied to the intermediate region T1 for a predetermined time, the intermediate rinsing liquid valve 32 is closed and the discharge of the rinsing liquid from the intermediate discharge port 12 is stopped (step S205, see FIG. 6). ).

  As shown in FIG. 10, the rinse liquid remaining in the intermediate region T1 after the discharge of the rinse liquid from the intermediate discharge port 12 is stopped is the force that the rinse liquid itself flows outward or the force that is pushed by the nitrogen gas. To move outward. Further, in the rinsing liquid process in this processing example of the substrate W, the supply flow rate of the nitrogen gas to the central discharge port 11 is increased with the passage of time, so that the rinsing liquid on the substrate W is reliably transferred to the substrate W with the passage of time. It is moved to the peripheral side. Accordingly, the rinsing liquid remaining in the intermediate region T1 surely moves outward. Accordingly, the rinse liquid remaining in the intermediate region T1 after the discharge of the rinse liquid from the intermediate discharge port 12 is stopped is discharged toward the peripheral edge of the substrate W. Therefore, the rinse liquid is reliably removed from the intermediate region T1.

  After the rinse liquid is removed from the intermediate region T1, the peripheral rinse liquid valve 34 is opened while the nozzle 4 is rotated at a constant rotational speed, and the discharge of the rinse liquid from the peripheral discharge port 13 is started. (Step S206; see FIG. 6). As shown in FIG. 11, the rinse liquid discharged from the peripheral discharge port 13 is supplied to the peripheral region T2, and then spreads outward along the upper surface of the substrate W. Accordingly, even if the rinse liquid discharged from the central discharge port 11 and the intermediate discharge port 12 or the rinse liquid discharged first from the peripheral discharge port 13 remains in the peripheral region T2, these rinse liquids are not discharged from the peripheral discharge port. The rinse liquid discharged from the outlet 13 moves outward by the force flowing outward. Furthermore, since the discharge of nitrogen gas from the central discharge port 11 is continued, the rinse liquid remaining in the peripheral region T2 is pushed by the nitrogen gas and moves outward. Therefore, the rinse liquid remaining in the peripheral area T2 is discharged around the substrate W, while the new rinse liquid discharged from the peripheral discharge port 13 is supplied to the entire area of the peripheral area T2.

  As described above, in the rinsing liquid processing in the processing example of the substrate W, a new rinsing liquid whose processing capability is not lowered is sequentially supplied to the central portion of the upper surface of the substrate W, the intermediate region T1, and the peripheral region T2. Thereby, the rinsing liquid is supplied to the entire upper surface of the substrate W, and the chemical liquid on the substrate W is washed away by the rinsing liquid. When the rinsing liquid is supplied to the peripheral region T2 for a predetermined time, the peripheral rinsing liquid valve 34 is closed and the discharge of the rinsing liquid from the peripheral discharge port 13 is stopped (step S207, see FIG. 6). ).

  As shown in FIG. 12, the rinsing liquid remaining in the peripheral region T2 after the discharge of the rinsing liquid from the peripheral discharge port 13 is stopped is the force that the rinsing liquid itself flows outward or the force that is pushed by the nitrogen gas. To move outward. Further, in the rinsing liquid process in this processing example of the substrate W, the supply flow rate of the nitrogen gas to the central discharge port 11 is increased with the passage of time, so that the rinsing liquid on the substrate W is reliably transferred to the substrate W with the passage of time. It is moved to the peripheral side. Therefore, the rinse liquid remaining in the peripheral region T2 surely moves outward. Thus, in the rinsing liquid treatment in this processing example of the substrate W, the rinsing liquid supplied to the upper surface of the substrate W is removed from the central portion of the upper surface of the substrate W toward the peripheral edge, and the upper surface of the substrate W is rinsed. Washed away by liquid. Accordingly, almost or all of the rinsing liquid is removed from the entire upper surface of the substrate W almost simultaneously with the completion of the rinsing process.

  Next, a drying process for drying the substrate W is performed (step S3). More specifically, following the rinsing process, the discharge of nitrogen gas from the central discharge port 11 is continued for a predetermined time. As described above, when nitrogen gas is discharged from the central discharge port 11, the discharged nitrogen gas is sprayed on the center of the upper surface of the substrate W and then spreads outward along the upper surface of the substrate W. Thereby, nitrogen gas is supplied to the entire upper surface of the substrate W. The processing liquid (chemical solution or rinsing liquid) adhering to the upper surface of the substrate W is removed from the substrate W by being blown off around the substrate W or evaporated by nitrogen gas. In this way, the drying process is performed, and the substrate W is dried. When the supply of nitrogen gas to the upper surface of the substrate W is performed for a predetermined time, the central gas valve 29 is closed, and the discharge of nitrogen gas from the central discharge port 11 is stopped. Furthermore, after the nozzle 4 is retracted to the retracted position by the retracting mechanism 9, the processed substrate W is unloaded from the processing chamber 2 by the transport mechanism.

  As described above, in the present embodiment, the processing liquid held on the upper surface of the substrate W is moved outward by discharging the processing liquid from the central discharge port 11, the intermediate discharge port 12, and the peripheral discharge port 13. A new processing liquid whose processing capability has not decreased can be supplied to the central portion of the upper surface of the substrate W, the intermediate region T1, and the peripheral region T2. Therefore, the processing liquid is smoothly discharged from the central portion of the upper surface of the substrate W toward the peripheral edge by discharging the processing liquid from the respective discharge outlets in the order of the central discharge port 11, the intermediate discharge port 12, and the peripheral discharge port 13. As a result, a new processing liquid whose processing capability is not lowered can be supplied to the entire upper surface of the substrate W. Thereby, the entire upper surface of the substrate W can be processed uniformly. Furthermore, in this embodiment, since the processing liquid is supplied at a uniform flow rate at any location on the upper surface of the substrate W, the entire upper surface of the substrate W can be processed more uniformly.

  In the present embodiment, the gas discharged from the central discharge port 11 (nitrogen gas in the above-described processing example of the substrate W) is blown onto the upper surface of the substrate W. Therefore, the processing liquid remaining in the central portion of the upper surface of the substrate W is surely discharged by the gas sprayed on the upper surface of the substrate W. Further, the processing liquid remaining around the central portion (intermediate region T1 and peripheral region T2) is discharged outward along the upper surface of the substrate W from the intermediate discharge port 12 and the peripheral discharge port 13. In addition to the flowing force, the gas discharged from the central discharge port 11 receives a force flowing outward. Accordingly, the processing liquid held around the central portion is surely discharged outward. Thereby, the processing liquid held on the upper surface of the substrate W can be surely discharged, and a new processing liquid whose processing capability is not lowered can be reliably supplied to the entire upper surface of the substrate W.

  Further, in the present embodiment, the gas is discharged from the central discharge port 11 after the discharge of the processing liquid from the central discharge port 11 is stopped. Then, the processing liquid is discharged from the intermediate discharge port 12 in a state where gas is discharged from the central discharge port 11. Further, after the discharge of the processing liquid from the intermediate discharge port 12 is stopped, the processing liquid is discharged from the peripheral discharge port 13 in a state where the gas is discharged from the central discharge port 11. Then, the discharge of the processing liquid from the peripheral discharge port 13 is stopped while the gas is discharged from the central discharge port 11. Thereby, the upper surface of the substrate W is processed by the processing liquid while the processing liquid supplied to the upper surface of the substrate W is removed from the center of the upper surface of the substrate W toward the periphery. Therefore, almost or all of the processing liquid is removed from the entire upper surface of the substrate W almost simultaneously with the completion of the processing of the substrate W by the processing liquid. Therefore, the drying of the substrate W can proceed simultaneously with the rinsing process. As a result, the drying time of the substrate W (the time during which the drying process is performed) can be shortened.

  In the present embodiment, the processing liquid is discharged from the nozzle 4 toward the substrate W held in a non-rotated state by the substrate holding mechanism 3 while rotating the nozzle 4 at a constant rotation speed by the rotation mechanism 8. . Thereby, the processing liquid is reliably supplied to the entire region (the entire circumference) of the intermediate region T1 and the peripheral region T2. Furthermore, since the nozzle 4 is rotated at a constant rotational speed, the processing liquid is supplied at a uniform flow rate to the entire region (the entire periphery) of the intermediate region T1 and the peripheral region T2. Thereby, the intermediate region T1 and the peripheral region T2 can be processed uniformly.

  Although the embodiments of the present invention have been described above, the present invention is not limited to the contents of the above-described embodiments, and various modifications can be made within the scope of the claims. For example, in the above-described embodiment, the case where the plurality of intermediate discharge ports 12 are arranged in a ring shape (see FIG. 3) has been described. For example, like the nozzle 204 shown in FIG. It may be an annular discharge port that is continuous over the circumference. Similarly, the peripheral discharge port 213 may be an annular discharge port that is continuous over the entire circumference. In this case, the processing liquid can be reliably supplied to the entire region (all circumferences) of the intermediate region T1 and the peripheral region T2 without rotating the nozzle 204 by the rotation mechanism 8 (see FIG. 1). Therefore, in the case of this configuration, the rotation mechanism 8 may not be provided.

  Further, the nozzle may be a multiple nozzle in which a plurality of cylindrical members are arranged coaxially as shown in FIG. 15, for example. More specifically, the nozzle 304 shown in FIG. 15 includes a columnar member 35 and a plurality of (for example, two) cylindrical members (an inner cylindrical member 36 and an outer cylindrical member 37) that coaxially surround the columnar member 35. ). A central flow path 314 extending vertically is formed in the columnar member 35. A cylindrical intermediate flow path 315 is formed between the columnar member 35 and the inner cylindrical member 36. A cylindrical peripheral channel 316 is formed between the inner cylindrical member 36 and the outer cylindrical member 37. The central fluid supply pipe 17, the intermediate fluid supply pipe 18, and the peripheral fluid supply pipe 19 communicate with the central flow path 314, the intermediate flow path 315, and the peripheral flow path 316, respectively. The central flow path 314 is formed in the vicinity of the central axis of the nozzle 304. A central discharge port 311 is formed at the lower end of the central flow path 314. In addition, an annular intermediate discharge port 312 that is continuous over the entire circumference is formed at the lower end of the intermediate flow path 315. The lower end portion of the intermediate flow path 315 is inclined so as to be positioned on the outer side as it goes down. In addition, an annular peripheral discharge port 313 that is continuous over the entire periphery is formed at the lower end of the peripheral flow path 316. The lower end portion of the peripheral flow path 316 is inclined so as to be located on the outer side as it goes down.

  Further, for example, as shown in FIG. 16, the nozzle may include a central discharge port, an intermediate discharge port, and a peripheral discharge port arranged in a straight line along the radial direction of the substrate W. More specifically, the nozzle 404 shown in FIG. 16 extends in the radial direction of the substrate W in plan view. One end of the nozzle 404 is disposed directly above the central portion of the substrate W. The nozzle 404 includes, for example, a central discharge port 411, an intermediate discharge port 412, and a peripheral discharge port 413 arranged in a straight line along the radial direction of the substrate W. The central discharge port 411 is disposed at a position slightly shifted from the center of the substrate W in plan view. The nozzle 404 is rotated around a vertical axis L1 passing through the center of the substrate W by the rotation mechanism 8. By discharging the processing liquid from the intermediate discharge port 412 and the peripheral discharge port 413 while rotating the nozzle 404 by the rotation mechanism 8, the processing liquid can be supplied to the entire region (the entire periphery) of the intermediate region T 1 and the peripheral region T 2. it can.

  According to this configuration, the nozzle can be downsized as compared with the nozzles 4, 204, and 304 described above. Moreover, according to this structure, manufacture is easy compared with the above-mentioned nozzle 4. FIG. More specifically, when a plurality of intermediate discharge ports 12 (see FIG. 3) are provided as in the nozzle 4 described above, when the nozzle 4 is manufactured, Each intermediate discharge port 12 needs to be formed in consideration of the positional relationship. On the other hand, since the nozzle 404 shown in FIG. 16 has only one intermediate discharge port 412, it is not necessary to consider the positional relationship with other intermediate discharge ports. Similarly, since the nozzle 404 shown in FIG. 16 has only one peripheral discharge port 413, the positional relationship with other peripheral discharge ports need not be considered. Therefore, manufacture is easy compared with the above-mentioned nozzle 4.

  Further, for example, as shown in FIG. 17, the nozzle may be configured to be able to discharge gas not only from the central discharge port but also from the intermediate discharge port and the peripheral discharge port. More specifically, the nozzle 504 shown in FIG. 17 is connected via an intermediate fluid supply pipe 18 to an intermediate gas supply pipe 39 in which an intermediate gas valve 38 is interposed. The nozzle 504 is connected to the peripheral gas supply pipe 41 through which the peripheral gas valve 40 is interposed via the peripheral fluid supply pipe 19. An inert gas is supplied to the nozzle 504 from the intermediate gas supply pipe 39 via the intermediate fluid supply pipe 18. The nozzle 504 is supplied with an inert gas from the peripheral gas supply pipe 41 via the peripheral fluid supply pipe 19. The intermediate gas valve 38, the intermediate gas supply pipe 39, the peripheral gas valve 40, and the peripheral gas supply pipe 41 are each part of the gas supply means.

  When processing the substrate W using the nozzle 504 shown in FIG. 17, for example, after stopping the discharge of the processing liquid from the central discharge port 11, the inert gas is discharged from the central discharge port 11. Then, the processing liquid is discharged from the intermediate discharge port 12 in a state where the inert gas is discharged from the central discharge port 11. Then, after stopping the discharge of the processing liquid from the intermediate discharge port 12, the inert gas is discharged from the intermediate discharge port 12. Then, the processing liquid is discharged from the peripheral discharge port 13 while the inert gas is discharged from the central discharge port 11 and the intermediate discharge port 12. Then, after stopping the discharge of the processing liquid from the peripheral discharge port 13, the inert gas is discharged from the central discharge port 11, the intermediate discharge port 12, and the peripheral discharge port 13. Thereby, a new processing liquid whose processing capability is not lowered can be supplied to the entire upper surface of the substrate W while the processing liquid is smoothly discharged from the central portion of the upper surface of the substrate W toward the periphery.

In the nozzles 4, 204, 304, and 504 according to the above-described embodiment, the case where the intermediate discharge port and the peripheral discharge port are formed so as to surround the center of the lower surface of the nozzle doubly has been described. The outlet and the peripheral discharge port may be formed so as to surround the center of the lower surface of the nozzle in multiple (three or more).
In the above-described embodiment, the case where the nozzle and the processing liquid supply unit are configured to supply the processing liquid at a uniform flow rate at any location on the upper surface of the substrate W has been described. However, the present invention is not limited to this. For example, the temperature and concentration of the processing liquid supplied to the substrate W may be adjusted. More specifically, the peripheral region T2 has a larger area than the central portion of the upper surface of the substrate W. Therefore, when a certain amount of processing liquid is supplied to the central portion of the upper surface of the substrate W and the peripheral region T2, the peripheral region The treatment liquid supplied to T2 has a larger temperature drop. Therefore, when the processing capacity of the processing liquid changes depending on the temperature, the nozzle and the processing liquid supply unit may be configured to supply a processing liquid having a higher temperature toward the peripheral side of the substrate W. In addition, when the processing capacity of the processing liquid changes depending on the concentration, the nozzle and the processing liquid supply unit are configured to perform processing with higher concentration toward the peripheral side of the substrate W in order to suppress or prevent processing non-uniformity due to the decrease in concentration. You may be comprised so that a liquid may be supplied.

In the processing example of the substrate W described above, the case where the processing liquid is discharged from any one of the discharge ports in the order of the central discharge port 11, the intermediate discharge port 12, and the peripheral discharge port 13 has been described. Alternatively, the processing liquid may be discharged simultaneously from the three discharge ports.
In the above-described processing example of the substrate W, the case where the drying process is performed after the rinsing process has been described, but all of the processing liquid is removed from the entire upper surface of the substrate W almost simultaneously with the completion of the rinsing process. And when the board | substrate W can be dried, the drying process after a rinse process is unnecessary.

  Further, in the processing example of the substrate W described above, the case where the processing liquid is discharged from the nozzle 4 while rotating the nozzle 4 at a constant rotational speed has been described. However, the rotational speed of the nozzle 4 increases as time passes. Also good. If the rotational speed of the nozzle 4 is increased when discharging the processing liquid from the nozzle 4, the supply position of the processing liquid to the substrate W moves outward. Therefore, for example, by increasing the rotational speed of the nozzle 4 over time so that the supply position of the processing liquid discharged from the central discharge port 11 moves from the central portion of the upper surface of the substrate W to the peripheral portion, It is possible to supply a new processing liquid whose processing capability is not lowered to the entire upper surface of the substrate W while smoothly discharging the processing liquid from the central portion of the upper surface toward the periphery. Further, the processing liquid can be supplied to the entire upper surface of the substrate W by discharging the processing liquid from at least one discharge port (central discharge port 11).

  In the processing example of the substrate W described above, the case where the processing liquid is discharged from the intermediate discharge port 12 and the peripheral discharge port 13 at a constant flow rate has been described. However, the processing liquid is discharged from the intermediate discharge port 12 and the peripheral discharge port 13. The discharge flow rate of the processing liquid may be adjusted with time. For example, referring to FIG. 2, a processing liquid flow rate adjusting valve (processing liquid supply flow rate adjusting means) may be interposed in the intermediate fluid supply pipe 18 and the peripheral fluid supply pipe 19. Further, the opening degree of the processing liquid flow rate adjustment valve is adjusted by the control unit 10 so that the supply position of the processing liquid supplied from the intermediate discharge port 12 and the peripheral discharge port 13 to the upper surface of the substrate W moves toward the peripheral edge. May be.

  That is, when the supply flow rate of the processing liquid to the intermediate discharge port 12 and the peripheral discharge port 13 is small, the supplied processing liquid is discharged so as to fall from the intermediate discharge port 12 and the peripheral discharge port 13. Therefore, the processing liquid discharged from the intermediate discharge port 12 and the peripheral discharge port 13 is supplied to the substrate W with little movement in the horizontal direction. On the other hand, when the supply flow rate of the processing liquid to the intermediate discharge port 12 and the peripheral discharge port 13 is sufficient, the processing liquid is vigorously discharged obliquely downward from the intermediate discharge port 12 and the peripheral discharge port 13. Therefore, the processing liquid discharged from the intermediate discharge port 12 and the peripheral discharge port 13 is supplied to the substrate W at a position away from the intermediate discharge port 12 and the peripheral discharge port 13 in the horizontal direction. Therefore, by increasing the supply flow rate of the processing liquid to the intermediate discharge port 12 and the peripheral discharge port 13 over time, the processing liquid is supplied to the substrate W while the supply position of the processing liquid to the substrate W is moved outward. Can be supplied.

  In addition, various design changes can be made within the scope of matters described in the claims.

DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 3 Substrate holding mechanism (substrate holding means)
4 Nozzle 8 rotating mechanism (nozzle rotating means)
10 Control unit (control means)
11 Central discharge port 12 Intermediate discharge port 13 Peripheral discharge port 17 Central fluid supply pipe (part of processing liquid supply means, part of gas supply means)
18 Intermediate fluid supply pipe (part of processing liquid supply means, part of gas supply means)
19 Peripheral fluid supply pipe (part of processing liquid supply means, part of gas supply means)
20 Central chemical supply pipe (part of processing liquid supply means)
21 Central rinse liquid supply pipe (part of processing liquid supply means)
22 Central gas supply pipe (part of gas supply means)
23 Intermediate chemical supply pipe (part of processing liquid supply means)
24 Intermediate rinse liquid supply pipe (part of processing liquid supply means)
25 Peripheral chemical liquid supply pipe (part of processing liquid supply means)
26 peripheral rinse liquid supply pipe (part of processing liquid supply means)
27 Central chemical valve (part of processing liquid supply means)
28 Central rinse liquid valve (part of processing liquid supply means)
29 Central gas valve (part of gas supply means)
30 Flow rate adjustment valve (part of gas supply means, flow rate adjustment means)
31 Intermediate chemical valve (part of processing liquid supply means)
32 Intermediate rinse liquid valve (part of processing liquid supply means)
33 Peripheral chemical liquid valve (part of processing liquid supply means)
34 Peripheral rinse liquid valve (part of processing liquid supply means)
38 Intermediate gas valve (part of gas supply means)
39 Intermediate gas supply pipe (part of gas supply means)
40 Perimeter gas valve (part of gas supply means)
41 Peripheral gas supply pipe (part of gas supply means)
204 Nozzle 212 Intermediate discharge port 213 Peripheral discharge port 304 Nozzle 311 Central discharge port 312 Intermediate discharge port 313 Peripheral discharge port 404 Nozzle 411 Central discharge port 412 Intermediate discharge port 413 Peripheral discharge port 504 Nozzle T1 Intermediate region T2 Peripheral region W Substrate

Claims (10)

Substrate holding means for holding the substrate in a non-rotating state;
A central discharge port that discharges fluid toward the central portion of the main surface of the substrate held by the substrate holding means, and an intermediate discharge that discharges fluid outward toward the annular intermediate region surrounding the central portion of the main surface A nozzle having an outlet and a peripheral discharge port that discharges fluid outward toward an annular peripheral region surrounding the intermediate region;
Treatment liquid supply means for individually supplying treatment liquid to the central discharge port, the intermediate discharge port, and the peripheral discharge port;
By controlling the processing liquid supply means, the central discharge port, the intermediate discharge port, and the peripheral discharge port in this order toward the non-rotated substrate held by the substrate holding unit. And a control means for discharging a processing liquid to the intermediate discharge port and the peripheral discharge port .   The center discharge port, the intermediate discharge port, and the peripheral discharge port respectively discharge a fluid toward the central portion, the intermediate region, and the peripheral region, and the nozzle holds the substrate. A retraction means for moving the nozzle between a second position retreated from the means;
  The control means controls the retracting means so that at least the discharge of the processing liquid from the central discharge port is started until the discharge of the processing liquid from the peripheral discharge port is stopped. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is located at a first position.   The substrate processing apparatus according to claim 1, wherein the intermediate discharge port includes a plurality of intermediate discharge ports arranged in an annular shape.   The substrate processing apparatus according to claim 1, wherein the intermediate discharge port includes an annular intermediate discharge port that is continuous over the entire circumference. Further comprising gas supply means for supplying gas to the central discharge port,
Wherein the control means controls the gas supply means, the discharge of the processing liquid from the central discharge port after stopping to eject gas from the central discharge opening, any one of claims 1-4 2. The substrate processing apparatus according to 1. The control means controls the treatment liquid supply means and the gas supply means to start discharge of the treatment liquid from the central discharge port, stop discharge of the treatment liquid from the central discharge port, and from the central discharge port. The discharge start of gas is executed in this order, and then the discharge of the processing liquid from the intermediate discharge port is started in the state where the gas is discharged from the central discharge port, the discharge stop of the processing liquid from the intermediate discharge port, The substrate processing apparatus according to claim 5 , wherein the discharge of the processing liquid from the peripheral discharge port and the stop of discharge of the processing liquid from the peripheral discharge port are executed in this order.   The processing liquid supply means includes a processing liquid supply flow rate adjusting means for adjusting a supply flow rate of the processing liquid to the nozzle,
  The substrate processing apparatus according to claim 1, wherein the control unit controls the processing liquid supply flow rate adjusting unit to increase the supply flow rate of the processing liquid to the nozzle with time. Further comprising a nozzle rotating means for rotating the nozzle about an axis perpendicular to the substrate through the middle portion of the main surface, the substrate processing apparatus according to any one of claims 1-7.   The substrate processing apparatus according to claim 8, wherein the control unit controls the nozzle rotating unit to increase the rotation speed of the nozzle with time while discharging the processing liquid from the nozzle. A substrate holding step for holding the substrate in a non-rotating state;
In parallel with the substrate holding step, a central processing liquid supply step for supplying a processing liquid to the central portion of the main surface of the substrate,
After the central processing liquid supply step is executed, in parallel with the substrate holding step, an intermediate region processing liquid supply that discharges the processing liquid outward toward an annular intermediate region surrounding the central portion of the main surface. Process,
After the intermediate region processing liquid supply step is executed, in parallel with the substrate holding step, a peripheral region processing liquid supply step for discharging the processing liquid outward toward an annular peripheral region surrounding the intermediate region. A substrate processing method.

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