JP5795920B2 - Substrate processing equipment - Google Patents

Description

  The present invention relates to a substrate processing apparatus for processing a substrate. Examples of substrates to be processed include semiconductor wafers, liquid crystal display substrates, plasma display substrates, FED (Field Emission Display) substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, and photomasks. Substrate, ceramic substrate, solar cell substrate and the like.

  In the manufacturing process of a semiconductor device or a liquid crystal display device, a substrate processing apparatus for processing a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display device is used. A single-wafer type substrate processing apparatus that processes substrates one by one includes, for example, a substrate support member that horizontally supports the substrate, and a processing liquid that discharges the processing liquid toward the upper surface of the substrate supported by the substrate support member. Nozzle (see, for example, Patent Document 1).

  An annular surface surrounding the substrate is provided on the upper surface of the substrate support member. The inner peripheral edge of the annular surface is close to the peripheral edge of the substrate. Therefore, when the processing liquid is supplied to the upper surface of the substrate, a continuous liquid film of the processing liquid is formed from the substrate to the annular surface. Accordingly, the processing liquid smoothly moves from the peripheral edge of the upper surface of the substrate to the annular surface, and retention of the processing liquid at the peripheral edge of the upper surface of the substrate is suppressed or prevented. As a result, the entire upper surface of the substrate is covered with a thin film of the processing liquid having a substantially uniform film thickness, and the processing liquid is uniformly supplied to the upper surface of the substrate.

JP 2009-206485 A

  In the substrate processing apparatus described in Patent Document 1, if the gap in the radial direction between the annular surface and the substrate is large, the processing liquid that moves outward from the peripheral edge of the upper surface of the substrate falls into this gap. A liquid film of the processing liquid that continues from the substrate to the annular surface across the gap is not formed. Therefore, when processing a plurality of substrates, it is necessary to use a plurality of substrate processing apparatuses corresponding to the respective sizes. In other words, since the substrate processing apparatus described in Patent Document 1 can process only one size of substrate, it is necessary to use a plurality of substrate processing devices when processing a plurality of substrates. However, when a plurality of substrate processing apparatuses are purchased, a high cost is required, and a large space for installing the plurality of substrate processing apparatuses is also required.

  Accordingly, an object of the present invention is to provide a substrate processing apparatus capable of processing a plurality of sizes of substrates.

In order to achieve the above object, the invention according to claim 1 includes a support unit (13, 313, 367) for horizontally supporting a substrate (W) of an arbitrary size and an upward annular surface (57, 265, 268). 357, 385) each having a plurality of rings (5, 261, 262, 305, 368). 5A, 5B), and the annular surface horizontally surrounds the substrate in a state in which the inner peripheral edge is close to the peripheral portion of the substrate supported by the support unit. One is, disposed around the substrate supported by the support unit, the plurality of rings constitute a plurality of groups each including a plurality of size adjustment ring, each group , The length of the inner peripheral edge is common, the height of the annular surface has been configured by a plurality of different thickness adjusting ring (5A, 5C) respectively, a substrate processing apparatus (1, 201, 301). It is preferable that the inner peripheral edges of the plurality of thickness adjusting rings have not only a length but also a common shape.

According to this configuration, the support unit supports the substrate horizontally from below. Therefore, the support unit can horizontally support an arbitrary size substrate. Each ring has an upward annular surface that horizontally surrounds the substrate supported by the support unit. The plurality of rings include a plurality of size adjusting rings having different lengths of the inner peripheral edge of the annular surface. Therefore, by selecting a size adjusting ring having an annular surface corresponding to the size of the substrate supported by the support unit, and arranging this size adjusting ring around the substrate, the inner peripheral edge of the annular surface is set to the peripheral portion of the substrate. The substrate can be surrounded horizontally by an annular surface in the state of being close to the substrate. Therefore, a continuous liquid film of the processing liquid can be formed from the substrate to the annular surface. Thereby, the processing liquid can be uniformly supplied to the upper surface of the substrate, and the upper surface of the substrate can be processed uniformly. As described above, since the substrate processing apparatus is provided with a plurality of size adjustment rings having different inner peripheral lengths of the annular surface, a single substrate processing apparatus can process a plurality of substrates.
The thickness of the substrate carried into the substrate processing apparatus is not strictly constant and has a variation within tolerance. When the thickness of the substrate is different, it is preferable to change the thickness of the ring (the height of the annular surface) in accordance with the thickness of the substrate in order to reduce the height difference between the upper surface of the substrate and the annular surface. According to this configuration, each of the plurality of size adjustment rings belongs to a plurality of groups, and each group has a common inner length of the annular surface and the size adjustment ring belonging to the group. A plurality of thickness adjusting rings having different heights are used. That is, the plurality of rings belonging to a common group have the same inner peripheral length and different annular surface heights. On the other hand, the plurality of rings belonging to different groups have different inner peripheral lengths. Accordingly, by selecting a size adjustment ring corresponding to the size of the substrate from a plurality of size adjustment rings, and selecting a thickness adjustment ring corresponding to the thickness of the substrate from the group to which the size adjustment ring belongs, Rings corresponding to the size and thickness of can be placed around the substrate. Thereby, the height difference between the upper surface of the substrate and the annular surface can be reduced. Thereby, a continuous liquid film of the processing liquid can be reliably formed from the substrate to the annular surface, and the processing liquid can be uniformly supplied to the upper surface of the substrate.

  Any one of the plurality of rings may be manually arranged around the substrate, or may be automatically arranged around the substrate. That is, as in a second aspect of the invention, the substrate processing apparatus moves the plurality of rings and arranges any one of the plurality of rings around the substrate supported by the support unit. A ring moving unit (R1, 260) may be further included. In this case, the user of the substrate processing apparatus may not access the processing chamber in which the support unit is accommodated in order to move the plurality of rings. Therefore, the work time required for the arrangement and replacement of the rings can be shortened.

The invention according to claim 3 further includes a processing chamber (16) for storing the support unit and a storage chamber (B2) for storing the plurality of rings, wherein the ring moving unit includes the processing chamber and the storage. The substrate processing apparatus according to claim 2, further comprising a transfer unit (R1) that transfers the plurality of rings to and from the chamber.
According to this configuration, the transport unit transports the plurality of rings between the processing chamber that houses the support unit and the storage chamber that houses the plurality of rings. The ring corresponding to the size of the substrate supported by the support unit is carried into the processing chamber by the transport unit. Moreover, the ring which became unnecessary is carried out from a processing chamber by a conveyance unit. As described above, since only the necessary rings are arranged in the processing chamber, it is possible to suppress or prevent the processing chamber from becoming large, and to suppress or prevent the configuration of the processing chamber from becoming complicated.

The invention according to claim 4 further includes a processing chamber (16) that houses the support unit and the plurality of rings, and the ring moving unit moves the plurality of rings in the processing chamber. The substrate processing apparatus according to claim 2, including (260).
According to this configuration, the support unit and the plurality of rings are accommodated in the processing chamber. The processing chamber moving unit moves the plurality of rings in the processing chamber. Accordingly, a ring corresponding to the size of the substrate supported by the support unit is arranged around the substrate. As described above, since the plurality of rings are accommodated in the processing chamber, the aforementioned accommodation chamber and the transfer robot are not necessary. Accordingly, the footprint (occupied area) of the substrate processing apparatus can be reduced.

  The substrate processing apparatus may be configured to move the plurality of rings by the ring moving unit in response to a command input by a user from an input device (for example, a touch panel). The substrate processing apparatus may be configured to detect the size of the substrate and move the plurality of rings by the ring moving unit based on the detected value.

  That is, as in a fifth aspect of the invention, the substrate processing apparatus controls the size detection unit (10) for detecting the size of the substrate and the ring moving unit based on the detection value of the size detection unit. And a control device (7). The size detection unit may be a sensor that detects the size of the substrate in a state where the substrate is supported by the support unit, or detects the size of the substrate in the substrate transport path to the support unit. It may be a sensor.

  According to this configuration, the control device moves the plurality of rings by the ring moving unit by controlling the ring moving unit based on the detection value of the size detecting unit. Therefore, when the size of the substrate changes, the ring arranged around the substrate is automatically changed. Therefore, the user does not have to perform an input operation to change the ring each time the size of the substrate changes.

The substrate processing apparatus may be configured to move the plurality of rings by the ring moving unit in response to a command input by a user from an input device. The substrate processing apparatus may be configured to detect the thickness of the substrate and move the plurality of rings by the ring moving unit based on the detected value.
That is, as in a sixth aspect of the invention, the substrate processing apparatus moves a thickness detection unit (10) for detecting a thickness of the substrate and the plurality of rings, and moves any one of the plurality of rings. A ring moving unit (R1, 260) disposed around the substrate supported by the support unit; and a control device (7) for controlling the ring moving unit based on a detection value of the thickness detecting unit. You may go out. The thickness detection unit may be a sensor that detects the thickness of the substrate in a state where the substrate is supported by the support unit, or detects the thickness of the substrate in the substrate transport path to the support unit. It may be a sensor.

  According to this configuration, the control device moves the plurality of rings by the ring moving unit by controlling the ring moving unit based on the detection value of the thickness detecting unit. Therefore, when the thickness of the substrate changes, the ring arranged around the substrate is automatically changed. Therefore, the user does not have to perform an input operation to change the ring every time the thickness of the substrate changes.

According to a seventh aspect of the present invention, the substrate processing apparatus may further include a base (15) that removably supports any one ring around the support unit. In this case, a ring corresponding to the size of the substrate supported by the support unit is attached to the base. If the size of the substrate changes, the ring is removed from the base and another ring is attached to the base. In this way, the ring is replaced. Attachment and removal of the ring from the base may be performed manually or automatically.

The invention according to claim 8 includes a support unit for horizontally supporting a substrate of an arbitrary size, and a plurality of rings each having an upward annular surface, and the plurality of rings are included in the annular surface. Including a plurality of size adjustment rings with different peripheral lengths, the annular surface horizontally surrounding the substrate in a state where the inner peripheral edge is close to the peripheral portion of the substrate supported by the support unit, Any one of the plurality of rings is disposed around a substrate supported by the support unit, and the plurality of size adjustment rings concentrically surround the support unit and are supported so as to be movable up and down. including a plurality of concentric rings (261, 262) has a substrate processing apparatus. In this case, the height of each concentric ring is changed according to the size of the substrate supported by the support unit. For example, when a relatively small substrate is supported by the support unit, the inner concentric ring is arranged at a height such that the annular surface is located at substantially the same height as the upper surface of the substrate. When a relatively large substrate is supported by the support unit, the inner concentric ring is disposed below the outer concentric ring and retracts from the substrate. In this way, the states of the plurality of concentric rings are switched. The raising / lowering of the concentric ring may be performed manually or automatically.

The invention according to claim 9 is a substrate processing apparatus for processing a substrate, wherein the substrate processing apparatus includes a plurality of support units that horizontally support a substrate of an arbitrary size and an upward annular surface. The plurality of rings include a plurality of size adjusting rings having different inner peripheral lengths of the annular surface, and the inner peripheral edge is close to the peripheral edge portion of the substrate supported by the support unit. In this state, any one of the plurality of rings is disposed around the substrate supported by the support unit so that the annular surface horizontally surrounds the substrate, and the support unit has an arbitrary size. look including a plurality of support members (313,367) for horizontally supporting the the substrate, the substrate processing apparatus, a common member any one of the plurality of support members is removably attached 362), by connecting the plurality of rings to each of the plurality of support members, a plurality of base (315,369) and further including unitizing and said support member and the ring, in the substrate processing apparatus There is . In this case, the support member that horizontally supports the substrate is detachably attached to the common member. The support member is united with the ring by the base. Accordingly, the unit including the ring and the support member is detachably attached to the common member. Therefore, a plurality of substrates can be processed by selecting a unit corresponding to the size of the substrate and attaching the selected unit to the common member. The attachment and removal of the unit with respect to the common member may be performed manually or automatically.

  In this section, alphanumeric characters in parentheses represent reference numerals of corresponding components in the embodiments described later, but the scope of the claims is not limited by these reference numerals.

1 is a schematic plan view of a substrate processing apparatus according to a first embodiment of the present invention. It is the schematic diagram which looked at the inside of a board | substrate delivery unit from the horizontal direction. It is the schematic diagram which looked at the inside of a board | substrate delivery unit from the horizontal direction. It is a flowchart which shows an example of the operation | movement performed in a substrate processing apparatus. It is a schematic diagram of a process unit and the structure relevant to this. It is typical sectional drawing which shows schematic structure of a spin chuck. It is typical sectional drawing which shows schematic structure of a spin chuck. It is an illustration sectional view showing a process performed after an adapter ring is carried into a processing unit until a processed substrate is carried out from a processing unit. FIG. 6B is an illustrative sectional view showing a step subsequent to FIG. 6A. FIG. 6D is an illustrative sectional view showing a step subsequent to FIG. 6B. FIG. 6D is an illustrative sectional view showing a step subsequent to FIG. 6C. FIG. 6D is an illustrative sectional view showing a step subsequent to FIG. 6D. FIG. 6E is an illustrative sectional view showing a step subsequent to FIG. 6E. FIG. 6D is an illustrative sectional view showing a step subsequent to FIG. 6F. FIG. 6G is an illustrative sectional view showing a step subsequent to FIG. 6G. It is typical sectional drawing which shows schematic structure of the spin chuck which concerns on 2nd Embodiment of this invention. It is typical sectional drawing which shows schematic structure of the spin chuck which concerns on 2nd Embodiment of this invention. It is typical sectional drawing which shows schematic structure of the spin chuck which concerns on 3rd Embodiment of this invention. It is typical sectional drawing which shows the state by which the adapter unit is attached to the spin chuck which concerns on 3rd Embodiment of this invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
The substrate processing apparatus described below is a single-wafer type substrate processing apparatus that processes a disk-shaped substrate such as a semiconductor wafer one by one. The substrate processing apparatus has a configuration capable of processing a plurality of substrates (for example, a φ200 mm circular substrate and a φ300 mm circular substrate). The substrate may be a circular substrate such as a semiconductor wafer or a polygonal substrate such as a glass substrate for a liquid crystal display device. The substrate processing apparatus may be any of a cleaning apparatus, an etching apparatus, a resist coating apparatus, and a developing apparatus, and may be an apparatus that performs other processing on the substrate. A substrate processing apparatus according to the following embodiment is an etching apparatus that thins (thinns) a silicon wafer by etching a back surface opposite to a front surface that is a device formation surface.

The substrate to be processed is, for example, a bonded substrate obtained by bonding a silicon wafer and a support substrate. The bonded substrate is composed of a silicon wafer and a support substrate bonded to the device forming surface (front surface) of the silicon wafer with an adhesive. The support substrate is, for example, a circular substrate made of a glass substrate and having a radius substantially equal to that of the silicon wafer. By using the support substrate, it is possible to hold and transport the silicon wafer while suppressing or preventing deformation and breakage of the silicon wafer. The etchant used for thinning the silicon wafer may be, for example, hydrofluoric acid (hydrofluoric nitric acid mixed solution) or buffered hydrofluoric acid.
[First Embodiment]
FIG. 1 is a schematic plan view of a substrate processing apparatus 1 according to the first embodiment of the present invention.

  The substrate processing apparatus 1 includes a load port 2 that holds a plurality of carriers C that accommodate a substrate W, a substrate transfer unit 3 that transfers the substrate W, and a plurality of processing units 4 that process the substrate W. The processing block B1 and a storage block B2 (storage chamber) in which a plurality of storage units 6 that store a plurality of adapter rings 5 selected according to the size and thickness of the substrate W are arranged. The load port 2, the substrate transfer unit 3, the processing block B1, and the accommodation block B2 are arranged at intervals in the horizontal direction. The substrate delivery unit 3 is disposed between the load port 2 and the processing block B1, and the accommodation block B2 is disposed on the opposite side of the processing port B1 from the load port 2. The substrate processing apparatus 1 further includes an indexer robot IR disposed between the load port 2 and the substrate transfer unit 3, a main robot MR disposed between the substrate transfer unit 3 and the processing block B1, and a processing block. A replacement robot R1 (ring moving unit, transfer unit) disposed between B1 and the housing block B2 and a control device 7 for controlling the operation of the apparatus provided in the substrate processing apparatus 1 and the opening / closing of the valves. .

The indexer robot IR includes a U-shaped hand _HIR in plan view that holds the substrate W horizontally while being supported. The indexer robot IR moves the hand _HIR in the horizontal direction and the vertical direction. Further, the indexer robot IR, by rotating (rotation) about a vertical axis, to change the orientation of the hand H _IR. The plurality of carriers C are arranged in the horizontal arrangement direction D1. The indexer robot IR moves in the arrangement direction D1. Indexer robot IR by movement and rotation of the arrangement direction D1, is opposed to the hand H _IR to any carrier C and the substrate transfer unit 3. The indexer robot IR by the movement of the horizontal and vertical directions of the hand H _IR, carries operations in the carrier C and the substrate transfer unit 3 carries the substrate W, and a carrier C and the substrate transfer unit 3 transports the substrate W Carry out the unloading operation. The indexer robot IR transports the substrate W between the carrier C and the substrate transfer unit 3.

The main robot MR includes a U-shaped hand _HMR in plan view that is held horizontally while supporting the substrate W. The main robot MR moves the hand _HMR in the horizontal direction and the vertical direction. Further, the main robot MR, by rotating (rotation) about a vertical axis, to change the orientation of the hand H _MR. The plurality of processing units 4 are arranged in the arrangement direction D1. The main robot MR moves in the arrangement direction D1. The main robot MR, the movement and rotation of the arrangement direction D1, is opposed to the hand H _MR to any processing unit 4 and the substrate transfer unit 3. The main robot MR, by the movement of the horizontal and vertical directions of the hand H _MR, carrying operation to the processing unit 4 and the substrate transfer unit 3 carries the substrate W, and a processing unit 4 and the substrate W from the substrate transfer unit 3 Carry out the unloading operation. The main robot MR transports the substrate W between the processing unit 4 and the substrate delivery unit 3.

The replacement robot R <_{b> 1} includes a U-shaped hand HR < _b > 1 in plan view that is held horizontally while supporting the adapter ring 5. The replacement robot R1 moves the hand _HR1 in the horizontal direction and the vertical direction. Furthermore, replacement robot R1, by rotating (rotation) about a vertical axis, to change the orientation of the hand H _R1. The plurality of storage units 6 are arranged in the arrangement direction D1 in a state where they are stacked one above the other. The replacement robot R1 moves in the arrangement direction D1. Replacement robot R1 is the movement and rotation of the arrangement direction D1, is opposed to the hand H _R1 in any of the processing units 4 and housing unit 6. The replacement robot R1 is by the movement of the horizontal and vertical directions of the hand H _R1, the processing unit 4 and the housing unit 6 carrying operation for carrying the adapter ring 5 to and processing unit 4 and the housing unit 6 adapter ring 5 from Carry out the unloading operation. The replacement robot R1 conveys the adapter ring 5 between the accommodation unit 6 and the processing unit 4.

  The adapter ring 5 is a ring that is continuous over the entire circumference. As will be described later, in the processing unit 4, the substrate W is placed in a state where the inner periphery of the upper surface of the adapter ring 5 (specifically, the inner periphery of the annular surface 57) is close to the periphery of the horizontally supported substrate W. Is horizontally surrounded by the upper surface of the adapter ring 5. In this state, the processing liquid is supplied to the upper surface of the substrate W, and a substantially circular liquid film of the processing liquid is formed from the center of the substrate W to the adapter ring 5. The plurality of accommodating units 6 accommodates a plurality of adapter rings 5 having different sizes and thicknesses. The control device 7 measures the size and thickness of the substrate W carried into the processing unit 4 by the detection unit 10 provided in the substrate delivery unit 3. And the control apparatus 7 selects the adapter ring 5 of the optimal magnitude | size and thickness based on a measured value, and carries the selected adapter ring 5 in the processing unit 4. FIG. Thereby, the radial gap between the adapter ring 5 and the substrate W and the height difference between the upper surface of the substrate W and the upper surface of the adapter ring 5 are set to the minimum values.

2A and 2B are schematic views of the inside of the substrate transfer unit 3 as viewed from the horizontal direction.
The substrate transfer unit 3 includes a plurality of small substrate support pins 8 that support the substrate W, a plurality of large substrate support pins 9 that support a substrate W larger than the substrate W supported by the small substrate support pins 8, and a small substrate. And a detection unit 10 (size detection unit, thickness detection unit) for detecting the size and thickness of the substrate W supported by the support pins 8 and the large substrate support pins 9. The small substrate support pins 8 and the large substrate support pins 9 have an upwardly convex conical shape having a hemispherical tip. The large substrate support pins 9 are longer than the small substrate support pins 8. Although not shown, the plurality of small substrate support pins 8 are arranged along an inner circle of two concentric circles surrounding the center position P1, and the plurality of large substrate support pins 9 are arranged along the outer circle. Are arranged. Therefore, the small substrate support pins 8 and the large substrate support pins 9 are arranged concentrically.

The indexer robot IR and the main robot MR place the substrate W on the small substrate support pin 8 or the large substrate support pin 9 by the hand H _IR and the hand H _{MR, and} are supported by the small substrate support pin 8 or the large substrate support pin 9. The substrate W is lifted by the hand H _IR and the hand H _MR . The indexer robot IR and the main robot MR pass the substrate W to the small substrate support pin 8 or the large substrate support pin 9 so that the center of the substrate W is positioned on the vertical axis passing through the center position P1. When a relatively small substrate W is carried in, only the small substrate support pins 8 make point contact with the peripheral edge of the lower surface of the substrate W. On the other hand, when a relatively large substrate W is carried in, only the large substrate support pins 9 are in point contact with the peripheral portion of the lower surface of the substrate W. Therefore, it is possible to prevent the small substrate support pins 8 from coming into contact with the region on the inner side of the peripheral portion on the lower surface of the relatively large substrate W, thereby leaving a contact mark.

  The detection unit 10 includes a pair of inner sensors 11 that are vertically opposed to each other and a pair of outer sensors 12 that are vertically opposed to each other outside the pair of inner sensors 11 (in a direction away from the center position P1). The pair of inner sensors 11 are disposed above and below the substrate support position where the substrate W supported by the small substrate support pins 8 or the large substrate support pins 9 is disposed. Similarly, the pair of outer sensors 12 are arranged above and below the substrate support position. Each sensor 11 and 12 is held at a predetermined position. Each of the sensors 11 and 12 is a non-contact sensor that measures the distance to the target substrate W in a non-contact manner. The sensors 11 and 12 may be optical sensors, magnetic sensors, or other types of sensors.

  As shown in FIG. 2A, when a relatively small substrate W is carried into the substrate delivery unit 3, the substrate W is disposed between the pair of inner sensors 11, and only the pair of inner sensors 11 are turned on. On the other hand, as shown in FIG. 2B, when a relatively large substrate W is carried into the substrate delivery unit 3, the substrate W is disposed between the pair of inner sensors 11 and the pair of outer sensors 12. Both sensor 11 and outer sensor 12 are switched on. The control device 7 detects the size of the substrate W based on the on / off state of the sensors 11 and 12. Further, the control device 7 detects the thickness of the substrate W based on the distances from the sensors 11 and 12 to the substrate W. In this way, the size and thickness of the substrate W are detected.

FIG. 3 is a flowchart illustrating an example of operations performed in the substrate processing apparatus 1. In the following, reference is made to FIG. 1 and FIG.
The control device 7 unloads the substrate W from the carrier C by the indexer robot IR, and loads the substrate W into the substrate transfer unit 3 (S1). And the control apparatus 7 measures the magnitude | size and thickness of the board | substrate W simultaneously based on the detected value from the detection unit 10 (S2). Thereafter, the control device 7 selects the adapter ring 5 corresponding to the size and thickness of the substrate W (S3). Then, the control device 7 causes the replacement robot R1 to carry out the selected adapter ring 5 from one of the accommodation units 6 and carry this adapter ring 5 into any one of the processing units 4 (S4). Thereafter, the control device 7 causes the main robot MR to unload the substrate W from the substrate transfer unit 3, and loads the substrate W into the processing unit 4 into which the selected adapter ring 5 has been loaded (S5). Then, the control device 7 causes the processing unit 4 to process the substrate W (S6).

  After the substrate W has been processed, the control device 7 causes the main robot MR to unload the processed substrate W from the processing unit 4 (S7), and loads the substrate W into the substrate transfer unit 3. And the control apparatus 7 carries out the processed board | substrate W from the board | substrate delivery unit 3 by the indexer robot IR, and carries this board | substrate W in one of the carriers C. Further, in parallel with transporting the substrate W from the processing unit 4 to the carrier C, the control device 7 unloads the adapter ring 5 from the processing unit 4 by the replacement robot R1 (S8). It is carried into the storage unit 6. The control device 7 causes the indexer robot IR or the like to repeatedly execute this series of operations, thereby processing a plurality of substrates W one by one.

FIG. 4 is a schematic diagram of the processing unit 4 and the configuration related thereto.
The processing unit 4 includes a center chuck 13 (support unit) that horizontally holds the substrate W, a processing liquid supply unit 14 that supplies a processing liquid to the substrate W held by the center chuck 13, and a periphery of the center chuck 13. A base 15 that horizontally supports the adapter ring 5 and a partition wall 17 that forms a processing chamber 16 that accommodates the substrate W are included. Further, the processing unit 4 includes a suction unit 18 for attracting the substrate W to the center chuck 13, a chuck lifting / lowering unit 19 for lifting / lowering the substrate W held on the center chuck 13, and the substrate W held on the center chuck 13. And a rotation unit 20 that rotates the substrate W around a vertical rotation axis A1 that passes through the center of the substrate. The spin chuck C1 that holds the substrate W horizontally and rotates around the rotation axis A1 includes a center chuck 13, a base 15, an adapter ring 5, and a rotation unit 20.

  The partition wall 17 includes a main body 21 in which two openings are formed, and two shutters 22 and 23 that cover the two openings, respectively. The two openings are opened and closed by two shutters 22 and 23, respectively. The substrate W is carried into the processing chamber 16 from one opening by the main robot MR, and the adapter ring 5 is carried into the processing chamber 16 from the other opening by the replacement robot R1. The adapter ring 5 is detachably attached to the base 15. The adapter ring 5 has an annular surface 57. The plurality of accommodation units 6 have a plurality of size adjustment rings having the same height H1 (the thickness of the adapter ring 5) of the annular surface 57, and different inner diameters ID1 of the annular surface 57, and the same inner diameter ID1 of the annular surface 57. A plurality of thickness adjusting rings each having a different height H1 of the surface 57.

  The two adapter rings 5A and 5B are size adjusting rings in which the inner diameter ID1 of the annular surface 57 is different from each other and the height H1 of the annular surface 57 is equal to each other. Similarly, the two adapter rings 5C and 5D are size adjusting rings in which the inner diameter ID1 of the annular surface 57 is different from each other and the height H1 of the annular surface 57 is equal to each other. The two adapter rings 5A and 5C are thickness adjusting rings in which the inner diameter ID1 of the annular surface 57 is equal to each other and the height H1 of the annular surface 57 is different from each other. Similarly, the two adapter rings 5B and 5D are thickness adjusting rings in which the inner diameter ID1 of the annular surface 57 is equal to each other and the height H1 of the annular surface 57 is different from each other. The two adapter rings 5A and 5C constitute a group G1, and the two adapter rings 5B and 5D constitute another group G2. The control device 7 selects any one of these adapter rings 5 and attaches the selected adapter ring 5 to the base 15 by the replacement robot R1.

  The processing liquid supply unit 14 includes a chemical liquid nozzle 24 that supplies a chemical liquid to the upper surface of the substrate W. The chemical liquid nozzle 24 is connected to a chemical liquid pipe 26 in which a chemical liquid valve 25 is interposed. Further, the chemical liquid nozzle 24 is connected to a nozzle moving mechanism (not shown) that moves the chemical liquid nozzle 24 in the horizontal direction and the vertical direction. The chemical nozzle 24 is, for example, a slit nozzle having a slit-like discharge port. A slit discharge port 27 longer than the diameter of the substrate W is formed on the lower surface of the chemical liquid nozzle 24. The two flexible sheets 28 are attached to the chemical nozzle 24 on both sides of the slit outlet 27. Each sheet 28 moves together with the chemical nozzle 24. The sheet 28 has a rectangular shape that is long in the direction (longitudinal direction) in which the slit discharge port 27 extends. The length of the sheet 28 in the longitudinal direction is not less than the length of the slit discharge port 27. The sheet 28 is attached to the chemical liquid nozzle 24 in a vertical posture, and the lower end of the sheet 28 is disposed below the slit discharge port 27. When the chemical solution is supplied from the chemical solution nozzle 24 to the substrate W, the lower end of each sheet 28 comes into contact with the upper surface of the substrate W, and the chemical solution nozzle 24 is disposed at a position where each sheet 28 bends.

  The processing liquid supply unit 14 further includes an upper surface rinsing liquid nozzle 29 that supplies a rinsing liquid to the upper surface of the substrate W, and a lower surface rinsing liquid nozzle 30 that supplies a rinsing liquid to the lower surface periphery of the substrate W. The upper surface rinsing liquid nozzle 29 is connected to an upper surface rinsing liquid pipe 32 in which an upper surface rinsing liquid valve 31 is interposed. Further, the upper surface rinsing liquid nozzle 29 is connected to a nozzle moving mechanism (not shown) that moves the upper surface rinsing liquid nozzle 29 in the horizontal direction and the vertical direction. Similarly, the lower surface rinsing liquid nozzle 30 is connected to a lower surface rinsing liquid pipe 34 in which a lower surface rinsing liquid valve 33 is interposed. Further, the lower surface rinsing liquid nozzle 30 is connected to a nozzle moving mechanism (not shown) that moves the lower surface rinsing liquid nozzle 30 in the horizontal direction and the vertical direction. The upper surface rinsing liquid nozzle 29 and the lower surface rinsing liquid nozzle 30 are, for example, straight nozzles that discharge the rinsing liquid in a continuous flow state. The upper surface rinsing liquid nozzle 29 discharges the rinsing liquid downward, and the lower surface rinsing liquid nozzle 30 discharges the rinsing liquid upward.

  5A and 5B are schematic cross-sectional views showing a schematic configuration of the spin chuck C1. FIG. 5A shows the configuration of a relatively small spin chuck C1 for a substrate W, and FIG. 5B shows the configuration of a relatively large spin chuck C1 for a substrate W. Hereinafter, a state in which the adapter ring 5 is attached to the base 15 and the center chuck 13 is located at the upper surface processing position, which is the lower position, will be described.

  As described above, the spin chuck C <b> 1 includes the center chuck 13, the base 15, the adapter ring 5, and the rotation unit 20. The center chuck 13 includes a disk-like suction head 35 disposed horizontally and a cylindrical suction shaft 36 extending downward from the center of the suction head 35. The outer diameter of the suction head 35 is smaller than the diameter of the substrate W. The central portion of the lower surface of the substrate W is supported by the upper surface of the suction head 35. A suction path 37 extending downward from the center of the upper surface of the suction head 35 is formed inside the suction head 35 and the suction shaft 36, and a suction groove 38 communicating with the suction path 37 is formed on the upper surface of the suction head 35. Is formed. The suction groove 38 includes a plurality of annular grooves concentrically surrounding the upper end of the suction path 37 and a plurality of radiation grooves extending radially from the upper end of the suction path 37. In FIGS. 5A and 5B, only a plurality of annular grooves are shown. The suction unit 18 is connected to the suction path 37. The suction force of the suction unit 18 is transmitted to the suction groove 38 via the suction path 37. When the suction path 37 is sucked by the suction unit 18 while the substrate W is supported by the suction head 35, the substrate W is sucked by the suction head 35 by the suction force from the suction unit 18. As a result, the substrate W is held horizontally.

  The base 15 includes a disk-shaped base plate 39 that is horizontally disposed, and a base shaft 40 that extends downward from the center of the base plate 39. Inside the base plate 39 and the base shaft 40, an insertion hole 41 extending downward from the center of the upper surface of the base plate 39 is formed. The suction head 35 is disposed above the base plate 39, and the suction shaft 36 is inserted into the insertion hole 41. The inner peripheral surface of the base 15 (the inner peripheral surface of the insertion hole 41) and the outer peripheral surface of the adsorption shaft 36 form a cylindrical gas supply path 42 extending in the vertical direction. The upper end of the gas supply path 42 is connected to a circular space in plan view between the upper surface of the base plate 39 and the lower surface of the suction head 35. The lower end of the gas supply path 42 is connected to a gas pipe 44 in which a gas valve 43 is interposed. The gas from the gas supply source is supplied to the gas supply path 42 via the gas pipe 44. The gas supplied to the gas supply path 42 may be, for example, an inert gas such as nitrogen gas or other gas such as clean air.

  The base 15 is connected to the center chuck 13 by engagement of a plurality of keys 45 attached to the outer peripheral surface of the suction shaft 36 and a plurality of key grooves provided on the inner peripheral surface of the base 15. The center chuck 13 and the base 15 are not limited to the key 45 but may be connected by a spline. The key 45 and the keyway extend in the vertical direction. The center chuck 13 and the base 15 are coaxially connected by the engagement of the key 45 and the key groove. Although not shown, the base 15 is rotatably held around the rotation axis A1. Since the center chuck 13 and the base 15 are connected by a key 45 extending in the vertical direction and the base 15 is rotatable, the center chuck 13 and the base 15 are relatively movable in the vertical direction, and are integrated around the rotation axis A1. It can be rotated.

  The base plate 39 includes a disc-shaped chuck support portion 46 that supports the center chuck 13, an annular engagement portion 47 that meshes with the adapter ring 5, an annular seal retaining recess 49 that retains an adapter ring seal 48, and an adapter ring. 5 and an annular ring support portion 50 that supports 5. The chuck support 46 is a disk-shaped portion having an outer diameter that is approximately the same size as the suction head 35. The meshing portion 47 surrounds the chuck support portion 46, and the seal holding recess 49 surrounds the meshing portion 47. The ring support portion 50 surrounds the seal holding recess 49. The meshing portion 47, the seal holding concave portion 49, and the ring support portion 50 surround the chuck support portion 46 concentrically.

  The upper surface of the base plate 39 (the upper surface of the chuck support portion 46) faces the lower surface of the suction head 35. The chuck support portion 46 includes a damming protrusion 51 that protrudes upward from the upper surface of the chuck support portion 46. The dam projections 51 are concentric with the base plate 39 and are annular portions that are continuous over the entire circumference. The damming projection 51 is fitted in an annular fitting groove provided on the lower surface of the suction head 35. Further, a chuck seal 52 surrounding the damming projection 51 is disposed outside the damming projection 51. The chuck seal 52 is held by the suction head 35 and is pressed against the upper surface of the chuck support 46 outside the damming projection 51. Thereby, the gap between the upper surface of the chuck support 46 and the lower surface of the suction head 35 is sealed. The suction head 35 is supported by the base plate 39 via the chuck seal 52.

  The adapter ring 5 surrounds the center chuck 13 (suction head 35) above the base 15. The adapter ring 5 includes an annular meshing portion 53 provided at a lower portion of the inner peripheral portion of the adapter ring 5 and an annular supported portion 54 surrounding the meshing portion 53. The meshing portion 53 meshes with the meshing portion 47 of the base 15. The two meshing portions 47 and 53 constitute a meshing clutch that can be attached and detached vertically. That is, the meshing portions 47 and 53 include a plurality of convex portions and concave portions that are alternately arranged in the circumferential direction. The base 15 and the adapter ring 5 are connected by meshing of the meshing portions 47 and 53. Accordingly, the base 15 and the adapter ring 5 can be relatively moved up and down, and can rotate integrally around the rotation axis A1. Further, the supported portion 54 is supported by the ring support portion 50 of the base 15. The adapter ring seal 48 held in the seal holding recess 49 of the base 15 is pressed against the lower surface of the supported portion 54. Thereby, the clearance gap between the upper surface of the base plate 39 and the lower surface of the adapter ring 5 is sealed.

  The adapter ring 5 further includes an annular facing surface 55 facing the lower surface of the substrate W, an annular seal holding recess 56 disposed outside the facing surface 55, and an annular surface disposed outside the seal holding recess 56. 57. The opposing surface 55, the seal holding recess 56, and the annular surface 57 are arranged concentrically. The facing surface 55 and the annular surface 57 are part of the upper surface of the adapter ring 5. The opposing surface 55 and the annular surface 57 are upward horizontal surfaces arranged at different heights. That is, the facing surface 55 is disposed at substantially the same height as the upper surface of the center chuck 13. The annular surface 57 is disposed outside the facing surface 55 and above the facing surface 55. The annular surface 57 is disposed along a horizontal plane including the upper surface of the substrate W held by the center chuck 13, and is disposed at substantially the same height as the upper surface of the substrate W. The annular surface 57 may be disposed at the same height as the upper surface of the substrate W, or may be disposed slightly above or below the upper surface of the substrate W. The inner peripheral edge of the annular surface 57 surrounds the substrate W via a small radial gap (for example, a gap of several mm or less) and is close to the peripheral end surface of the substrate W.

  The seal holding recess 56 provided in the adapter ring 5 is recessed below the facing surface 55 and the annular surface 57. The seal holding recess 56 holds a substrate seal 58. The substrate seal 58 is an annular elastic body that is continuous over the entire circumference. The substrate seal 58 is, for example, a packing with a lip. The upper surface of the substrate seal 58 is pressed against the peripheral edge of the lower surface of the substrate W held by the center chuck 13. Thereby, the clearance gap between the lower surface peripheral part of the board | substrate W and the adapter ring 5 is sealed. In a state where the substrate seal 58 is pressed against the substrate W, the outer peripheral edge of the upper surface of the substrate seal 58 and the outer peripheral edge of the lower surface of the substrate W coincide. Further, the upper surface of the substrate seal 58 is in close contact with the peripheral edge of the lower surface of the substrate W by a restoring force due to elastic deformation. As a result, the peripheral edge of the lower surface of the substrate W is protected by the substrate seal 58, and the contact of the processing liquid with the peripheral surface of the lower surface of the substrate W is prevented.

The adapter ring 5 is attached to the base 15 from above. The adapter ring 5 is removable upward with respect to the base 15. Attachment and removal of the adapter ring 5 to and from the base 15 is performed by the replacement robot R1. That is, the adapter ring 5, further comprising a handling protrusion 59 to be handled by the hand _{H R1} replacement robot R1. The handling protrusion 59 is provided on the outer peripheral portion of the adapter ring 5. The handling protrusion 59 may be divided into a plurality in the circumferential direction of the adapter ring 5 or may be continuous over the entire circumference. The handling protrusion 59 is disposed outside the annular surface 57 and below the annular surface 57. The handling protrusion 59 is supported by the replacement robot R1. As a result, the adapter ring 5 is supported by the replacement robot R1. The replacement robot R1 attaches and removes the adapter ring 5 to and from the base 15 by raising and lowering the adapter ring 5 with respect to the base 15.

  The chuck lifting / lowering unit 19 is connected to the center chuck 13 (suction shaft 36). As described above, the center chuck 13 and the base 15 are connected by the key 45 so as to be relatively movable in the vertical direction. Therefore, when the driving force of the chuck lifting / lowering unit 19 is input to the center chuck 13, the center chuck 13 moves up and down with respect to the base 15 and the adapter ring 5. The chuck lifting / lowering unit 19 moves the center chuck 13 up and down between the upper surface processing position (lower position), the lower surface processing position (intermediate position) above the upper surface processing position, and the upper delivery position (upper position). The upper surface processing position and the lower surface processing position are positions where the upper surface and the lower surface of the substrate W are processed, respectively. The delivery position is a position where the substrate W is transferred between the main robot MR and the center chuck 13. is there. At the upper surface processing position, the lower surface of the substrate W is in contact with the substrate seal 58, and at the lower surface processing position, the lower surface of the substrate W is separated from the substrate seal 58 (see FIG. 6A). At the delivery position, the center chuck 13 (suction head 35) is located above the adapter ring 5 (see FIG. 6H).

  The rotation unit 20 is connected to the base 15. As described above, the center chuck 13 and the base 15 are connected by the key 45 so as to be integrally rotatable, and the base 15 and the adapter ring 5 are connected by the meshing portions 47 and 53 so as to be integrally rotatable. The key 45 and the key groove extend in the vertical direction, and engage with each other even when the center chuck 13 is located at any height between the upper surface processing position and the delivery position. Therefore, when the driving force of the rotation unit 20 is input to the base 15, this driving force is transmitted from the base 15 to the center chuck 13 and the adapter ring 5, and the center chuck 13, the base 15, and the adapter ring 5 are It rotates integrally around the rotation axis A1. As a result, the substrate W held by the center chuck 13 rotates around the rotation axis A1.

  6A to 6H are schematic cross-sectional views showing an example of a series of operations from when the adapter ring 5 is carried into the processing unit 4 to when the processed substrate W is carried out from the processing unit 4. Below, the thinning process which etches the back surface of a silicon wafer by supplying the etching liquid as a chemical | medical solution to the back surface of a silicon wafer, and the process relevant to this are demonstrated. In the following, reference is made to FIG. 6A to 6H will be referred to as appropriate.

  First, an adapter ring carrying-in process for carrying the adapter ring 5 into the processing unit 4 is performed. Specifically, the control device 7 retracts each nozzle 24, 29, 30 from above the center chuck 13 in advance. Further, the control device 7 positions the center chuck 13 at the lower position (upper surface processing position) by the chuck lifting / lowering unit 19. In this state, the control device 7 loads the adapter ring 5 into the processing unit 4 (in the processing chamber 16) by the replacement robot R1. Subsequently, as illustrated in FIG. 6A, the control device 7 lowers the adapter ring 5 by the replacement robot R <b> 1 and places the adapter ring 5 on the base 15. Thereafter, the control device 7 retracts the replacement robot R1 from the processing unit 4. In this manner, the adapter ring 5 corresponding to the size and thickness of the substrate W carried into the processing unit 4 is attached to the base 15.

Next, a substrate carry-in process for carrying the substrate W into the processing unit 4 is performed. Specifically, the control device 7 raises the center chuck 13 to an intermediate position (lower surface processing position) by the chuck lifting / lowering unit 19 in a state where the nozzles 24, 29, and 30 are retracted from above the center chuck 13. . In this state, the control device 7 loads the unprocessed substrate W into the processing unit 4 by the main robot MR. Subsequently, the control device 7 moves the substrate W above the center chuck 13 by the main robot MR with the back surface of the silicon wafer facing upward. Then, as shown in FIG. 6B, the control device 7 raises the center chuck 13 to the upper position (delivery position) by the chuck lifting / lowering unit 19. The substrate W supported by the hand H _MR of the main robot MR is received by the center chuck 13 and supported by the suction head 35 in the process in which the center chuck 13 moves to the upper position. The control device 7 retracts the main robot MR from the processing unit 4 after the substrate W is received by the center chuck 13.

  After the main robot MR is retracted from the processing unit 4, the control device 7 causes the lower surface of the substrate W to be attracted to the upper surface of the suction head 35 by the suction unit 18. Thereby, the substrate W is held in a horizontal posture. In this state, the control device 7 lowers the center chuck 13 from the upper position to the lower position by the chuck lifting / lowering unit 19. The substrate seal 58 comes into contact with the peripheral edge of the lower surface of the substrate W and is compressed downward while the center chuck 13 moves to the lower position. As a result, the substrate seal 58 is elastically deformed and is in close contact with the peripheral portion of the lower surface of the substrate W. Therefore, the space between the lower peripheral edge of the substrate W and the adapter ring 5 is sealed. Further, the entire area of the lower peripheral edge of the substrate W is protected by the substrate seal 58. Similarly, the chuck seal 52 comes into contact with the upper surface of the base 15 (the upper surface of the chuck support portion 46) and is compressed downward in the process of moving the center chuck 13 to the lower position. As a result, the chuck seal 52 is elastically deformed and is in close contact with the base 15. Therefore, the space between the suction head 35 and the base 15 is sealed.

  After the center chuck 13 reaches the lower position, the control device 7 causes the rotation unit 20 to move the spin chuck C1 (the adapter ring 5, the center chuck 13 and the base 15) around the rotation axis A1 at a low speed (for example, 10 rpm), etc. Rotate at high speed. As a result, the substrate W rotates around the rotation axis A1 at a low speed. Further, after the center chuck 13 reaches the lower position, the control device 7 opens the gas valve 43 to supply nitrogen gas, which is an example of gas, to the gas supply path 42. The gas supply path 42 communicates with a gap between the lower surface of the suction head 35 and the upper surface of the base 15 (the upper surface of the chuck support portion 46). Further, a gap between the lower surface of the suction head 35 and the upper surface of the base 15 is sealed with a chuck seal 52. Accordingly, when nitrogen gas is supplied to the gas supply path 42, the air pressure between the lower surface of the suction head 35 and the upper surface of the base 15 increases, and the space inside the chuck seal 52 is maintained at a positive pressure. Therefore, it is possible to reliably prevent the processing liquid that has reached the chuck seal 52 from passing between the inner peripheral surface of the adapter ring 5 and the outer peripheral surface of the suction head 35 from moving to the inside of the chuck seal 52. The supply of nitrogen gas to the gas supply path 42 is continued until the second spin dry process described later is completed.

  Next, a chemical treatment process (thinning process) for supplying fluoric nitric acid, which is an example of an etchant, to the upper surface of the substrate W is performed. Specifically, the control device 7 moves the chemical nozzle 24 above the substrate W by a nozzle moving mechanism (not shown). After that, the control device 7 opens the chemical liquid valve 25 and discharges the hydrofluoric acid from the chemical liquid nozzle 24 while rotating the substrate W at a constant chemical treatment speed (for example, 10 rpm). Thereby, as shown in FIG. 6C, hydrofluoric acid is supplied to the upper surface of the rotating substrate W. The controller 7 reciprocates the chemical liquid nozzle 24 in the horizontal direction intersecting the longitudinal direction of the slit discharge port 27 by the nozzle moving mechanism while discharging the hydrofluoric acid from the chemical liquid nozzle 24 (shown by a one-dot chain line in FIG. 6C). (See the position and position shown by the two-dot chain line). Accordingly, the position where the fluorinated nitric acid is deposited scans the entire upper surface of the substrate W, and the fluorinated nitric acid is supplied to the entire upper surface of the substrate W. As a result, hydrofluoric acid is supplied over the entire upper surface of the rotating substrate W, and a liquid film of hydrofluoric acid covering the entire upper surface of the substrate W is formed. After supplying the nitric acid to the substrate W over a predetermined time, the control device 7 closes the chemical liquid valve 25 and stops the discharge of the hydrofluoric acid from the chemical nozzle 24. Thereafter, the control device 7 retracts the chemical solution nozzle 24 from above the substrate W by the nozzle moving mechanism.

  The hydrofluoric acid supplied to the rotating substrate W flows outward by centrifugal force. As described above, since the rotation speed of the substrate W is low, the difference between the flow rate of hydrofluoric acid at the center of the upper surface of the substrate W and the flow rate of hydrofluoric acid at the peripheral edge of the upper surface of the substrate W is small. Therefore, the supply state of hydrofluoric acid to the substrate W is made uniform. Further, since the annular surface 57 of the adapter ring 5 horizontally surrounds the periphery of the substrate W with the inner peripheral edge close to the peripheral end surface of the substrate W, the annular surface 57 is annularly formed from the peripheral portion of the upper surface of the substrate W as shown in FIG. A liquid film of hydrofluoric acid that continues to the surface 57 is formed. Therefore, the nitric acid smoothly flows from the peripheral edge of the upper surface of the substrate W to the annular surface 57. Therefore, even if the substrate W is rotated at a low speed, the outward flow of hydrofluoric acid stays at the periphery of the upper surface of the substrate W, and a thicker liquid film is formed at the periphery of the upper surface of the substrate W. This can be suppressed or prevented. Thereby, the supply state of hydrofluoric acid to the substrate W can be made more uniform. Moreover, since the two sheets 28 attached to the chemical nozzle 24 move together with the chemical nozzle 24 in contact with the upper surface of the substrate W, the preceding sheet 28 removes the deactivated hydrofluoric acid on the substrate W. The subsequent sheet 28 is scraped off and the liquid film of hydrofluoric acid on the substrate W is leveled. Therefore, the supply state of hydrofluoric acid to the substrate W is further uniformized. Thereby, the upper surface of the substrate W can be uniformly treated with hydrofluoric acid.

  Next, an upper surface rinsing process for supplying pure water (deionized water), which is an example of a rinsing liquid, to the upper surface of the substrate W is performed. Specifically, the control device 7 moves the upper surface rinsing liquid nozzle 29 above the substrate W by a nozzle moving mechanism (not shown). Thereafter, the control device 7 opens the upper surface rinsing liquid valve 31 while causing the substrate W to rotate at a constant speed at an upper surface rinsing speed (for example, 10 rpm), and discharges pure water from the upper surface rinsing liquid nozzle 29. Thereby, as shown in FIG. 6D, pure water is supplied to the upper surface of the rotating substrate W. Therefore, the hydrofluoric acid on the substrate W is replaced with pure water. Furthermore, the pure water supplied to the substrate W flows over the minute gap between the annular surface 57 and the substrate W from the substrate W onto the adapter ring 5, and the hydrofluoric acid on the annular surface 57 is replaced with pure water. The Therefore, a substantially circular pure water liquid film is formed from the center of the substrate W to the annular surface 57, and the upper surface of the substrate W and the annular surface 57 are covered with the pure water liquid film. After supplying pure water to the substrate W for a predetermined time, the control device 7 closes the upper surface rinse liquid valve 31 and stops the discharge of pure water from the upper surface rinse liquid nozzle 29. Thereafter, the control device 7 retracts the upper surface rinsing liquid nozzle 29 from above the substrate W by the nozzle moving mechanism.

  Next, a drying process (first spin dry process) for drying the substrate W is performed. Specifically, the control device 7 accelerates the rotation of the spin chuck C1 by the rotation unit 20 with the center chuck 13 positioned at the lower position, and sets the rotation speed of the substrate W to the first drying speed (3000 rpm to 3000 rpm). Up to about 4000 rpm). 6E, a large centrifugal force acts on the pure water adhering to the substrate W, and the pure water adhering to the substrate W is shaken off around the substrate W. In this way, pure water is removed from the substrate W, and the substrate W is dried. Then, after the drying process is performed for a predetermined time, the control device 7 controls the rotation unit 20 to stop the rotation of the substrate W by the spin chuck C1.

  Next, a lower surface rinsing step is performed in which pure water, which is an example of a rinsing liquid, is supplied to the lower surface periphery of the substrate W. Specifically, the control device 7 raises the center chuck 13 to the intermediate position by the chuck lifting / lowering unit 19. Further, the control device 7 moves the lower surface rinsing liquid nozzle 30 to a predetermined position in the vicinity of the substrate W by a nozzle moving mechanism (not shown). Thereafter, the control device 7 causes the rotation unit 20 to rotate the spin chuck C1 at a constant speed at a lower surface rinse speed (for example, 200 rpm). In this state, the control device 7 opens the lower surface rinsing liquid valve 33 and discharges pure water from the lower surface rinsing liquid nozzle 30. As a result, as shown in FIG. 6F, pure water is supplied to the peripheral surface of the lower surface of the rotating substrate W. Furthermore, the pure water supplied to the lower surface peripheral portion of the substrate W goes around from the lower surface peripheral portion of the substrate W to the peripheral end surface and the upper surface peripheral portion of the substrate W, and is supplied to those portions. In this way, pure water is supplied to the peripheral edge of the substrate W, and the liquid and foreign matter adhering to the peripheral edge of the substrate W are washed away. After the supply of pure water to the substrate W is performed for a predetermined time, the control device 7 closes the lower surface rinse liquid valve 33 and stops the discharge of pure water from the lower surface rinse liquid nozzle 30. Thereafter, the control device 7 retracts the lower surface rinsing liquid nozzle 30 from the vicinity of the substrate W by the nozzle moving mechanism.

  The pure water supplied to the lower surface peripheral portion of the substrate W in the lower surface rinsing process is scattered in the lateral direction from the lower surface peripheral portion of the substrate W while moving in the rotational direction along the lower surface peripheral portion of the substrate W. Therefore, the pure water supplied from the lower surface rinsing liquid nozzle 30 to the substrate W hardly goes inward of the rotation radius of the substrate W. In addition, since the center chuck 13 is located at the intermediate position, the chuck seal 52 is separated from the base 15. Therefore, the nitrogen gas discharged upward from the upper end of the gas supply path 42 corresponding to the gas discharge port flows outward (in a direction away from the rotation axis A1) between the lower surface of the adsorption head 35 and the upper surface of the base 15. Forms an outward airflow. Therefore, it is possible to reliably suppress or prevent the liquid droplet from going inward of the rotation radius. Further, even if the droplet moves inward along the upper surface of the base 15, the droplet is blocked by the blocking protrusion 51 provided on the upper surface of the base 15. Therefore, the entry of the liquid into the base shaft 40 is reliably suppressed or prevented.

  Next, a drying process (second spin drying process) for drying the substrate W is performed. Specifically, the control device 7 accelerates the rotation of the spin chuck C1 by the rotation unit 20 in a state where the center chuck 13 is positioned at the intermediate position, and sets the rotation speed of the substrate W to the second drying speed (3000 rpm to 3000 rpm). Up to about 4000 rpm). 6G, a large centrifugal force acts on the pure water adhering to the substrate W, and the pure water adhering to the substrate W is shaken off around the substrate W. In this way, pure water is removed from the substrate W, and the substrate W is dried. Then, after the drying process is performed for a predetermined time, the control device 7 controls the rotation unit 20 to stop the rotation of the substrate W by the spin chuck C1. Further, the control device 7 closes the gas valve 43 and stops the supply of nitrogen gas to the gas supply path 42.

Next, a substrate unloading process for unloading the substrate W from the processing unit 4 is performed. Specifically, the control device 7 raises the center chuck 13 to the upper position by the chuck lifting / lowering unit 19 in a state where the nozzles 24, 29, and 30 are retracted from above the center chuck 13. Thereafter, the control device 7 controls the suction unit 18 to release the suction of the substrate W by the suction head 35. Subsequently, as shown in FIG. 6H, the control device 7, by advancing the hand H _MR of the main robot MR to the processing unit 4 to position the hand H _MR below the lower surface peripheral portion of the substrate W. In this state, the control device 7 lowers the center chuck 13 to the intermediate position by the chuck lifting / lowering unit 19. As a result, the processed substrate W is received by the main robot MR. After the substrate W is received by the main robot MR, the control device 7 retracts the main robot MR from the processing unit 4 and unloads the substrate W from the processing unit 4. Thereafter, the control device 7 causes the adapter ring 5 to be unloaded from the processing unit 4 by the replacement robot R1.

As described above, in the first embodiment, the plurality of adapter rings 5 having different sizes and thicknesses are provided in the substrate processing apparatus 1, and the adapter rings 5 corresponding to the sizes and thicknesses of the substrates W are removed from the housing block B2. It is conveyed to the processing unit 4. Accordingly, the adapter ring 5 corresponding to the size and thickness of the substrate W is disposed around the substrate W. Accordingly, a continuous liquid film of the processing liquid from the substrate W to the annular surface 57 can be formed. Thereby, the processing liquid can be uniformly supplied to the upper surface of the substrate W, and the upper surface of the substrate W can be processed uniformly. As described above, since the plurality of adapter rings 5 having different sizes and thicknesses are provided in the substrate processing apparatus 1, a single substrate processing apparatus 1 can process a plurality of substrates W.
[Second Embodiment]
Next, a substrate processing apparatus 201 according to the second embodiment of the present invention will be described.

  In the first embodiment described above, a plurality of adapter rings are arranged outside the processing chamber, and only the selected adapter ring is carried into the processing chamber, whereas in the second embodiment, the center chuck is A plurality of concentric rings surrounding concentrically are arranged in the processing chamber. 7A and 7B below, the same components as those shown in FIGS. 1 to 6H described above are denoted by the same reference numerals as those in FIG. 1 and the description thereof is omitted.

  7A and 7B are schematic cross-sectional views showing a schematic configuration of a spin chuck C201 according to the second embodiment of the present invention. The spin chuck C201 according to the second embodiment holds a relatively small substrate W (for example, a φ200 mm circular substrate) and a relatively large substrate W (for example, a φ300 mm circular substrate). Switch between. FIG. 7A shows a state where a relatively small substrate W is held, and FIG. 7B shows a state where a relatively large substrate W is held.

  The substrate processing apparatus 201 has the same configuration as the substrate processing apparatus 1 according to the first embodiment, except for the accommodation block B2, the replacement robot R1, and the processing unit 4 shown in FIG. That is, the accommodating block B2 and the replacement robot R1 are not provided, and a plurality of concentric rings 261 and 262 and a ring lifting / lowering unit 260 (ring moving unit and processing chamber moving unit are provided in each processing unit 204. The processing unit 204 includes a center chuck 13, a processing liquid supply unit 14, a partition wall 17, a suction unit 18, a chuck lifting / lowering unit 19, and a rotation unit 20 (see FIG. 4). A plurality of concentric rings (inner ring 261 and outer ring 262) surrounding the center chuck 13 concentrically, a base 215 for horizontally supporting the inner ring 261 and outer ring 262 around the center chuck 13, an inner ring 261, and Outerlin . Spin chuck C201 containing 262 and ring lifting unit 260 for elevating the can center the chuck 13, the base 215, inner ring 261 is constituted by the outer ring 262, and the rotary unit 20.

  The base 215 includes a disc-shaped base plate 239 that is horizontally disposed, and a base shaft 240 that extends downward from the center of the base plate 239. Inside the base plate 239 and the base shaft 240, an insertion hole 41 extending downward from the center of the upper surface of the base plate 239 is formed. The suction head 35 is disposed above the base plate 239, and the suction shaft 36 is inserted into the insertion hole 41. The inner peripheral surface of the base 215 (the inner peripheral surface of the insertion hole 41) and the outer peripheral surface of the adsorption shaft 36 form a cylindrical gas supply path 42 extending in the vertical direction. The upper end of the gas supply path 42 is connected to a circular space in plan view between the upper surface of the base plate 239 and the lower surface of the suction head 35. The lower end of the gas supply path 42 is connected to a gas pipe 44 in which a gas valve 43 is interposed.

  The base 215 is coupled to the center chuck 13 by engagement of a plurality of keys 45 attached to the outer peripheral surface of the suction shaft 36 and a plurality of key grooves provided on the inner peripheral surface of the base 215. The key 45 and the keyway extend in the vertical direction. The center chuck 13 and the base 215 are coaxially connected by the engagement of the key 45 and the key groove. Although not shown, the base 215 is rotatably held around the rotation axis A1. Since the center chuck 13 and the base 215 are connected by a key 45 extending in the vertical direction, and the base 215 is rotatable, the center chuck 13 and the base 215 are relatively movable in the vertical direction and are integrated around the rotation axis A1. It can be rotated.

  The base plate 239 includes a disc-shaped chuck support portion 46 that supports the center chuck 13. The chuck support 46 is a disk-shaped portion having an outer diameter that is approximately the same size as the suction head 35. The upper surface of the base plate 239 (the upper surface of the chuck support portion 46) faces the lower surface of the suction head 35. The chuck support portion 46 includes a damming protrusion 51 that protrudes upward from the upper surface of the chuck support portion 46. The dam projection 51 is an annular portion concentric with the base plate 239 and continuous over the entire circumference. The damming projection 51 is fitted in a fitting groove provided on the lower surface of the suction head 35. Further, a chuck seal 52 surrounding the damming projection 51 is disposed outside the damming projection 51. The chuck seal 52 is held by the suction head 35 and is pressed against the upper surface of the chuck support 46 outside the damming projection 51. Thereby, the gap between the upper surface of the chuck support 46 and the lower surface of the suction head 35 is sealed. The suction head 35 is supported by the base plate 239 via the chuck seal 52.

  The inner ring 261 surrounds the base 215 and the center chuck 13 (suction head 35), and the outer ring 262 surrounds the inner ring 261. The two rings 261 and 262 are arranged concentrically. The inner peripheral portion of the inner ring 261 is connected to the outer peripheral portion of the base plate 239 by, for example, a spline. The base plate 239 and the inner ring 261 can move relative to each other in the vertical direction, and can rotate integrally around the rotation axis A1. Similarly, the inner peripheral part of the outer ring 262 is connected to the outer peripheral part of the inner ring 261 by, for example, a spline. The inner ring 261 and the outer ring 262 are relatively movable in the vertical direction, and can be rotated integrally around the rotation axis A1. Therefore, when the driving force of the rotating unit 20 is input to the base 215, this driving force is transmitted from the base 215 to the inner ring 261 and further transmitted from the inner ring 261 to the outer ring 262. The driving force input to the base 215 is also transmitted to the center chuck 13 by the key 45. Therefore, the center chuck 13, the base 215, the inner ring 261, and the outer ring 262 rotate integrally around the rotation axis A1.

  The two rings 261 and 262 are connected to the ring lifting / lowering unit 260. The two rings 261 and 262 are individually lifted and lowered by the ring lifting / lowering unit 260. The ring lifting / lowering unit 260 moves the inner ring 261 up and down between the processing position (position shown in FIG. 7A) and the retracted position (position shown in FIG. 7B) below the processing position. The processing position is a position where the lower peripheral edge of the substrate W is supported by the inner ring 261, and the retracted position is a position where the entire inner ring 261 is disposed below the lower surface of the substrate W. Similarly, the ring lifting / lowering unit 260 moves the outer ring 262 up and down between a processing position (position shown in FIG. 7B) and a retracted position below the processing position (position shown in FIG. 7A). The processing position is a position where the outer peripheral edge of the substrate W is supported by the outer ring 262, and the retracted position is a position where the entire outer ring 262 is disposed below the lower surface of the substrate W.

  The peripheral edge of the lower surface of the substrate W is supported by one of the inner ring 261 and the outer ring 262. Which of the inner ring 261 and the outer ring 262 is used is selected depending on the size of the substrate W. In the case of a relatively small substrate W, as shown in FIG. 7A, the inner ring 261 and the outer ring 262 are disposed at the processing position and the retracted position, respectively, and the lower surface peripheral portion of the substrate W is supported by the inner ring 261. . On the other hand, in the case of a relatively large substrate W, as shown in FIG. 7B, the inner ring 261 and the outer ring 262 are disposed at the retracted position and the processing position, respectively, and the lower peripheral edge of the substrate W is the outer ring. 262 is supported. Accordingly, the substrate W is supported by either the inner ring 261 or the outer ring 262 and the center chuck 13. The control device 7 switches the state of the spin chuck C201 by controlling the ring lifting / lowering unit 260 in this way.

  The inner ring 261 is disposed outside the inner seal holding recess 264, an annular inner facing surface 263 facing the lower surface of the substrate W, an annular inner seal holding recess 264 disposed outside the inner facing surface 263, and the inner ring 261. And an annular inner annular surface 265. The inner facing surface 263, the inner seal holding recess 264, and the inner annular surface 265 are arranged concentrically. The inner facing surface 263 and the inner annular surface 265 are part of the upper surface of the inner ring 261. The inner facing surface 263 and the inner annular surface 265 are upward horizontal surfaces arranged at different heights. That is, the inner facing surface 263 is disposed at substantially the same height as the upper surface of the center chuck 13 at the processing position of the inner ring 261. The inner annular surface 265 is disposed outside the inner facing surface 263 and above the inner facing surface 263. The inner annular surface 265 is disposed along a horizontal plane including the upper surface of the substrate W held by the center chuck 13 at the processing position of the inner ring 261, and is disposed at substantially the same height as the upper surface of the substrate W. Yes. The inner peripheral edge of the inner annular surface 265 surrounds the substrate W through a minute gap in the radial direction, and is close to the peripheral end surface of the substrate W.

  The inner seal holding recess 264 provided in the inner ring 261 is recessed below the inner facing surface 263 and the inner annular surface 265. The inner seal holding recess 264 holds the substrate seal 58. The upper surface of the substrate seal 58 is pressed against the peripheral edge of the lower surface of the substrate W held by the center chuck 13 at the processing position of the inner ring 261. Thereby, the clearance gap between the lower surface peripheral part of the board | substrate W and the inner ring 261 is sealed. In a state where the substrate seal 58 is pressed against the substrate W, the outer peripheral edge of the upper surface of the substrate seal 58 and the outer peripheral edge of the lower surface of the substrate W coincide. Further, the upper surface of the substrate seal 58 is in close contact with the peripheral edge of the lower surface of the substrate W by a restoring force due to elastic deformation. As a result, the peripheral edge of the lower surface of the substrate W is protected by the substrate seal 58, and the contact of the processing liquid with the peripheral surface of the lower surface of the substrate W is prevented.

  Similar to the inner ring 261, the outer ring 262 includes an annular outer facing surface 266 that faces the lower surface of the substrate W, an annular outer seal holding recess 267 that is disposed outside the outer facing surface 266, and an outer seal holding recess. And an annular outer annular surface 268 disposed outside the H.267. The outer facing surface 266, the outer seal holding recess 267, and the outer annular surface 268 are arranged concentrically. The outer facing surface 266 and the outer annular surface 268 are part of the upper surface of the outer ring 262. The outer facing surface 266 and the outer annular surface 268 are upward horizontal surfaces arranged at different heights. That is, the outer facing surface 266 is disposed at substantially the same height as the upper surface of the center chuck 13 at the processing position of the outer ring 262. The outer annular surface 268 is disposed outside the outer facing surface 266 and above the outer facing surface 266. The outer annular surface 268 is disposed along a horizontal plane including the upper surface of the substrate W held by the center chuck 13 at the processing position of the outer ring 262, and is disposed at substantially the same height as the upper surface of the substrate W. Yes. The inner peripheral edge of the outer annular surface 268 surrounds the substrate W through a small radial gap and is close to the peripheral end surface of the substrate W.

  The outer seal holding recess 267 provided in the outer ring 262 is recessed below the outer facing surface 266 and the outer annular surface 268. The outer seal holding recess 267 holds the substrate seal 58. The upper surface of the substrate seal 58 is pressed against the peripheral edge of the lower surface of the substrate W held by the center chuck 13 at the processing position of the outer ring 262. Thereby, the clearance gap between the lower surface peripheral part of the board | substrate W and the outer ring 262 is sealed. In a state where the substrate seal 58 is pressed against the substrate W, the outer peripheral edge of the upper surface of the substrate seal 58 and the outer peripheral edge of the lower surface of the substrate W coincide. Further, the upper surface of the substrate seal 58 is in close contact with the peripheral edge of the lower surface of the substrate W by a restoring force due to elastic deformation. As a result, the peripheral edge of the lower surface of the substrate W is protected by the substrate seal 58, and the contact of the processing liquid with the peripheral surface of the lower surface of the substrate W is prevented.

As described above, in the second embodiment, the plurality of concentric rings 261 and 262 surrounding the center chuck 13 concentrically are arranged in the processing chamber 16. The control device 7 controls the ring lifting / lowering unit 260 to place a ring (inner ring 261 or outer ring 262) corresponding to the size of the substrate W around the substrate W. Therefore, a continuous liquid film of the processing liquid from the substrate W to the annular surface (the inner annular surface 265 or the outer annular surface 268) can be formed. Thereby, the processing liquid can be uniformly supplied to the upper surface of the substrate W, and the upper surface of the substrate W can be processed uniformly. As described above, since a plurality of concentric rings 261 and 262 having different sizes are provided in the substrate processing apparatus 201, a single substrate processing apparatus 201 can process a plurality of sizes of substrates W.
[Third Embodiment]
Next, a substrate processing apparatus 301 according to a third embodiment of the present invention will be described.

  In the first embodiment described above, the adapter ring is replaced in accordance with the size and thickness of the substrate, whereas in the third embodiment, the adapter unit including the center chuck and the ring has the size and thickness of the substrate. Will be replaced accordingly. In FIG. 8A and FIG. 8B below, the same components as those shown in FIG. 1 to FIG. 7B are given the same reference numerals as those in FIG.

FIG. 8A is a schematic cross-sectional view showing a schematic configuration of a spin chuck C301 according to the third embodiment of the present invention. FIG. 8B is a schematic cross-sectional view showing a state where the adapter unit 361 is attached to the spin chuck C301 according to the third embodiment of the present invention.
The substrate processing apparatus 301 has the same configuration as the substrate processing apparatus 1 according to the first embodiment except for the processing unit 4 and the adapter ring 5 shown in FIG. That is, in the processing block B1 according to the third embodiment, a plurality of processing units 304 are arranged instead of the plurality of processing units 4 according to the first embodiment. In addition, a plurality of adapter units 361 are arranged in the accommodation block B2 according to the third embodiment instead of the plurality of adapter rings 5 according to the first embodiment. Although not shown, the plurality of adapter units 361 include a plurality of size adjustment rings having the same annular surface height and different inner diameters of the annular surface, and a plurality of adapter surfaces 361 having different annular surface inner diameters and different annular surface heights. And a thickness adjusting ring.

Hereinafter, the processing unit 304 and the adapter unit 361 will be described. First, the processing unit 304 will be described. In the following, reference is made to FIG. 8A. FIG. 8A shows a state where the substrate W is supported by the center chuck 313 located at the upper surface processing position.
[Processing unit 304]
The processing unit 304 includes a center chuck 313 (support unit, support member) that holds the substrate W horizontally, and a processing liquid supply unit 14 that supplies the processing liquid to the substrate W held on the center chuck 313 (see FIG. 4). A ring 305 disposed around the center chuck 313, a base 315 that horizontally supports the ring 305 around the center chuck 313, and a partition wall 17 that forms a processing chamber 16 that accommodates the substrate W (see FIG. 4). Including. Furthermore, the processing unit 304 rotates the substrate W around the rotation axis A1 and the suction unit 18 that attracts the substrate W to the center chuck 313, the chuck lifting unit 19 that lifts and lowers the substrate W held by the center chuck 313, and the like. A rotation unit 20. The spin chuck C301 includes a center chuck 313, a base 315, a ring 305, and the rotation unit 20.

  The center chuck 313 includes a disk-shaped suction head 335 arranged horizontally, and a cylindrical suction shaft 336 extending downward from the central portion of the suction head 335. The processing unit 304 further includes a cylindrical relay shaft 362 (common member) that extends downward from the lower end of the suction shaft 336. The outer diameter of the suction head 335 is smaller than the diameter of the substrate W. The central portion of the lower surface of the substrate W is supported by the upper surface of the suction head 335. The upper end portion of the suction shaft 336 is fixed to the suction head 335, and the lower end portion of the suction shaft 336 is fixed to the upper end portion of the relay shaft 362 by, for example, a screw 363. Accordingly, the suction shaft 336 and the relay shaft 362 are detachably connected. The center chuck 313 can be detached from the relay shaft 362. The center chuck 313 and the relay shaft 362 can rotate integrally around the rotation axis A1, and can move integrally in the vertical direction. The chuck lifting / lowering unit 19 is connected to the center chuck 313 via the relay shaft 362.

  A suction path 37 extending downward from the center of the upper surface of the suction head 335 is formed inside the suction head 335, the suction shaft 336, and the relay shaft 362. The upper surface of the suction head 335 communicates with the suction path 37. A suction groove 38 is formed. The suction unit 18 is connected to the suction path 37. The suction force of the suction unit 18 is transmitted to the suction groove 38 via the suction path 37. When the suction path 37 is sucked by the suction unit 18 while the substrate W is supported by the suction head 335, the substrate W is sucked by the suction head 335 by the suction force from the suction unit 18. As a result, the substrate W is held horizontally.

  The base 315 includes a disc-shaped base plate 339 that is horizontally disposed, and a base shaft 40 that extends downward from the center of the base plate 339. Inside the base plate 339 and the base shaft 40, an insertion hole 41 extending downward from the center of the upper surface of the base plate 339 is formed. The suction head 335 is disposed above the base plate 339, and the suction shaft 336 is inserted into the insertion hole 41. The inner peripheral surface of the base 315 (the inner peripheral surface of the insertion hole 41) and the outer peripheral surfaces of the adsorption shaft 336 and the relay shaft 362 form a cylindrical gas supply path 42 extending in the vertical direction. The upper end of the gas supply path 42 is connected to a circular space in plan view between the upper surface of the base plate 339 and the lower surface of the suction head 335. The lower end of the gas supply path 42 is connected to a gas pipe 44 in which a gas valve 43 is interposed.

  The base 315 is coupled to the relay shaft 362 by engagement of a plurality of keys 45 attached to the outer peripheral surface of the relay shaft 362 and a plurality of key grooves provided on the inner peripheral surface of the base 315. Therefore, the base 315 is connected to the center chuck 313 via the relay shaft 362. The center chuck 313 and the base 315 are coaxially connected by the engagement of the key 45 and the key groove. Although not shown, the base 315 is held rotatably around the rotation axis A1. Since the center chuck 313 and the base 315 are connected by a key 45 extending in the vertical direction, and the base 315 is rotatable, the center chuck 313 and the base 315 are relatively movable in the vertical direction, and are integrated around the rotation axis A1. It can be rotated. The driving force of the rotation unit 20 is input to the base shaft 40.

  The base plate 339 includes a chuck support portion 346 that supports the center chuck 313, an annular outer wall 364 that surrounds the center chuck 313, an annular seal holding recess 349 provided on the outer wall 364, and an annular ring support that supports the ring 305. Part 350. The chuck support portion 346 is a disk-shaped portion having an outer diameter substantially the same size as the suction head 335. The outer wall 364, the seal holding recess 349, and the ring support portion 350 surround the chuck support portion 346 concentrically. The upper surface of the chuck support portion 346 faces the lower surface of the suction head 335. The chuck support 346 includes a damming protrusion 51 that protrudes upward from the upper surface of the chuck support 346. The dam projection 51 is an annular portion concentric with the base plate 339 and continuous over the entire circumference. The damming projection 51 is fitted in a fitting groove provided on the lower surface of the suction head 335. Further, a chuck seal 52 surrounding the damming projection 51 is disposed outside the damming projection 51. The chuck seal 52 is held by the suction head 335 and pressed against the upper surface of the chuck support portion 346 outside the damming projection 51. As a result, the gap between the upper surface of the chuck support 346 and the lower surface of the suction head 335 is sealed. The suction head 335 is supported by the base plate 339 via the chuck seal 52.

  The outer wall 364 is an annular portion concentric with the base plate 339 and continuous over the entire circumference. The outer wall 364, together with the chuck support 346, forms an accommodation recess 365 that is circular in plan view and that accommodates the suction head 335. The outer wall 364 includes an annular facing surface 355 facing the lower surface of the substrate W, and the ring 305 includes an annular surface 357 disposed outside the facing surface 355. The facing surface 355 and the annular surface 357 are disposed concentrically, and the seal holding recess 349 is disposed between the facing surface 355 and the annular surface 357. The facing surface 355 is a part of the upper surface of the outer wall 364, and the annular surface 357 is the upper surface of the ring 305.

  The facing surface 355 and the annular surface 357 are upward horizontal surfaces arranged at different heights. That is, the facing surface 355 is disposed at substantially the same height as the upper surface of the center chuck 313. The annular surface 357 is disposed outside the facing surface 355 and above the facing surface 355. The annular surface 357 is disposed along a horizontal plane including the upper surface of the substrate W held by the center chuck 313, and is disposed at substantially the same height as the upper surface of the substrate W. The inner peripheral edge of the annular surface 357 surrounds the substrate W via a small radial gap and is close to the peripheral end surface of the substrate W.

  The seal holding recess 56 provided in the outer wall 364 is recessed below the facing surface 355 and the annular surface 357. The seal holding recess 56 holds a substrate seal 58. The upper surface of the substrate seal 58 is pressed against the peripheral edge of the lower surface of the substrate W held by the center chuck 313. Thereby, the clearance gap between the lower surface peripheral part of the board | substrate W and the outer wall 364 is sealed. In a state where the substrate seal 58 is pressed against the substrate W, the outer peripheral edge of the upper surface of the substrate seal 58 and the outer peripheral edge of the lower surface of the substrate W coincide. Further, the upper surface of the substrate seal 58 is in close contact with the peripheral edge of the lower surface of the substrate W by a restoring force due to elastic deformation. As a result, the peripheral edge of the lower surface of the substrate W is protected by the substrate seal 58, and the contact of the processing liquid with the peripheral surface of the lower surface of the substrate W is prevented.

  The ring 305 is connected to the base 315 by a plurality of bolts 366. The ring 305 and the center chuck 313 are connected by a base 315. The base 315 unitizes the ring 305 and the center chuck 313 by connecting the ring 305 and the center chuck 313. That is, the center chuck 313, the ring 305, and the base 315 constitute one unit.

[Adapter unit 361]
Next, the adapter unit 361 will be described. In the following, reference is made to FIG. 8B. FIG. 8B shows a state where the center chuck 313 is detached from the base 315 and an adapter unit 361 is attached to the base 315 instead of the center chuck 313. The substrate W is supported by a center chuck 367 located at the upper surface processing position.

  The adapter unit 361 includes a center chuck 367 (support unit, support member) that horizontally holds the substrate W, a ring 368 that surrounds the center chuck 367, and a base 369 that horizontally supports the ring 368 around the center chuck 367. Including. The center chuck 367 is supported by the base 369, and the ring 368 is connected to the base 369 by a plurality of bolts 366. The base 369 unitizes the center chuck 367 and the ring 368 by connecting the center chuck 367 and the ring 368. That is, the center chuck 367, the ring 368, and the base 369 constitute one unit.

  The center chuck 367 includes a disk-like suction head 370 disposed horizontally and a cylindrical suction shaft 371 extending downward from the center of the suction head 370. The lower end portion of the suction shaft 371 is fixed to the upper end portion of the relay shaft 362 by, for example, a screw 363. The center chuck 367 and the relay shaft 362 can rotate integrally around the rotation axis A1, and can move integrally in the vertical direction. The outer diameter of the suction head 370 is smaller than the diameter of the substrate W. The central portion of the lower surface of the substrate W is supported by the upper surface of the suction head 370. A suction path 372 extending downward from the center of the upper surface of the suction head 370 is formed inside the suction head 370 and the suction shaft 371, and a suction groove 373 communicating with the suction path 372 is formed on the upper surface of the suction head 370. Is formed. The suction unit 18 is connected to the suction path 372 via the suction path 37 in the relay shaft 362. The suction force of the suction unit 18 is transmitted to the suction groove 373 via the suction path 37 and the suction path 372. When the suction path 372 is sucked by the suction unit 18 while the substrate W is supported by the suction head 370, the substrate W is sucked by the suction head 370 by the suction force from the suction unit 18. As a result, the substrate W is held horizontally.

  The base 369 includes a horizontally disposed disk-shaped base plate 374 and a disk-shaped fitting portion 375 extending downward from the center of the base plate 374. The fitting portion 375 is a disc-shaped portion having the same outer diameter as the removed center chuck 313 (suction head 335; see FIG. 8A). The fitting portion 375 is supported by the lower base 315. On the lower surface of the fitting portion 375, an annular fitting groove for fitting the damming projection 51 provided on the lower base 315 is formed, and a chuck seal is formed on the outer portion of the fitting groove. 52 is held. Inside the base plate 374 and the fitting portion 375, an insertion hole 377 extending downward from the center portion of the upper surface of the base plate 374 is formed. The suction head 370 is disposed above the base plate 374, and the suction shaft 371 is inserted into the insertion hole 377. The inner peripheral surface of the base 369 (the inner peripheral surface of the insertion hole 41) and the outer peripheral surface of the adsorption shaft 371 form a cylindrical gas supply path 378 extending in the vertical direction. The upper end of the gas supply path 378 is connected to a circular space in plan view between the upper surface of the base plate 374 and the lower surface of the suction head 370. The lower end of the gas supply path 378 communicates with the lower gas supply path 42. Therefore, the gas from the gas pipe 44 is supplied to the gas supply path 378 via the gas supply path 42.

  The base 369 is connected to the center chuck 367 by engagement of a plurality of keys 45 attached to the outer peripheral surface of the suction shaft 371 and a plurality of key grooves provided on the inner peripheral surface of the base 369. The key 45 and the keyway extend in the vertical direction. The center chuck 367 and the base 369 are coaxially connected by engagement of the key 45 and the key groove. The center chuck 367 and the base 369 can be relatively moved up and down, and can rotate integrally around the rotation axis A1. When the driving force of the rotation unit 20 is input to the lower base 315, the driving force is transmitted from the lower base 315 to the relay shaft 362, and further transmitted from the relay shaft 362 to the suction shaft 371. . The driving force transmitted to the suction shaft 371 is transmitted from the suction shaft 371 to the upper base 369 by the key 45. As a result, the center chuck 367 and the base 369 rotate integrally around the rotation axis A1.

  The base plate 374 includes a chuck support portion 379 that supports the center chuck 367, an annular outer wall 380 that surrounds the center chuck 367, an annular seal holding recess 381 provided on the outer wall 380, and an annular ring support that supports the ring 368. Part 382. The chuck support portion 379 is a disk-shaped portion having an outer diameter substantially the same as that of the suction head 370. The outer wall 380, the seal holding recess 381, and the ring support portion 382 surround the chuck support portion 379 concentrically. The upper surface of the chuck support portion 379 faces the lower surface of the suction head 370. The chuck support portion 379 includes a damming protrusion 376 that protrudes upward from the upper surface of the chuck support portion 379. The dam projection 376 is an annular portion concentric with the base plate 374 and continuous over the entire circumference. The dam projection 376 is fitted in a fitting groove provided on the lower surface of the suction head 370. In addition, a chuck seal 52 surrounding the damming projection 376 is disposed outside the damming projection 376. The chuck seal 52 is held by the suction head 370, and is pressed against the upper surface of the chuck support portion 379 outside the damming projection 376. As a result, the gap between the upper surface of the chuck support 379 and the lower surface of the suction head 370 is sealed. The suction head 370 is supported by the base plate 374 via the chuck seal 52.

  The outer wall 380 provided on the base plate 374 is an annular portion concentric with the base plate 374 and continuous over the entire circumference. The outer wall 380 forms, together with the chuck support portion 379, an accommodation recess 383 having a circular shape in plan view that accommodates the suction head 370. The outer wall 380 includes an annular facing surface 384 facing the lower surface of the substrate W, and the ring 368 includes an annular surface 385 disposed outside the facing surface 384. The opposed surface 384 and the annular surface 385 are disposed concentrically, and the seal holding recess 381 is disposed between the opposed surface 384 and the annular surface 385. The facing surface 384 is a part of the upper surface of the outer wall 380, and the annular surface 385 is the upper surface of the ring 368.

  The opposing surface 384 and the annular surface 385 are upward horizontal surfaces arranged at different heights. That is, the facing surface 384 is disposed at substantially the same height as the upper surface of the center chuck 367. The annular surface 385 is disposed outside the facing surface 384 and above the facing surface 384. The annular surface 385 is disposed along a horizontal plane including the upper surface of the substrate W held by the center chuck 367, and is disposed at substantially the same height as the upper surface of the substrate W. The inner peripheral edge of the annular surface 385 surrounds the substrate W via a small radial gap and is close to the peripheral end surface of the substrate W.

  A seal holding recess 381 provided in the base plate 374 is recessed below the facing surface 384 and the annular surface 385. The seal holding recess 381 holds the substrate seal 58. The upper surface of the substrate seal 58 is pressed against the peripheral edge of the lower surface of the substrate W held by the center chuck 367. Thereby, the clearance gap between the lower surface peripheral part of the board | substrate W and the base 369 is sealed. In a state where the substrate seal 58 is pressed against the substrate W, the outer peripheral edge of the upper surface of the substrate seal 58 and the outer peripheral edge of the lower surface of the substrate W coincide. Further, the upper surface of the substrate seal 58 is in close contact with the peripheral edge of the lower surface of the substrate W by a restoring force due to elastic deformation. As a result, the peripheral edge of the lower surface of the substrate W is protected by the substrate seal 58, and the contact of the processing liquid with the peripheral surface of the lower surface of the substrate W is prevented.

  As described above, in the third embodiment, the ring 305 and the center chuck 313 are unitized by the base 315, and the ring 368 and the center chuck 367 are unitized by the base 369. These units include a plurality of size adjustment rings and a plurality of thickness adjustment rings. Accordingly, a unit corresponding to the size and thickness of the substrate W is selected from these units, and the substrate W is supported by this unit, whereby an annular surface (annular surface 357 corresponding to the size and thickness of the substrate W is selected. Alternatively, the annular surface 385) can be arranged around the substrate W. Accordingly, a continuous liquid film of the processing liquid from the substrate W to the annular surface 357 or the annular surface 385 can be formed. Thereby, the processing liquid can be uniformly supplied to the upper surface of the substrate W, and the upper surface of the substrate W can be processed uniformly. As described above, since a plurality of units having different sizes and thicknesses are provided in the substrate processing apparatus 301, a single substrate processing apparatus 301 can process a plurality of substrates W.

Although the description of the embodiment of the present invention has been described above, the present invention is not limited to the contents of the first to third embodiments described above, and various modifications are possible within the scope of the claims. .
For example, in the first embodiment described above, the case where the adapter ring is selected based on the size and thickness of the substrate has been described. However, the adapter ring may be selected based only on the size of the substrate.

In the first embodiment described above, the case where the adapter ring is automatically replaced has been described. However, the adapter ring may be replaced manually (by the user). The same applies to the second and third embodiments.
In the first to third embodiments described above, the case where the substrate processing apparatus is an apparatus that processes a disk-shaped substrate has been described. However, the substrate processing apparatus has a polygonal shape such as a substrate for a liquid crystal display device. An apparatus for processing a substrate may be used.

In the first to third embodiments described above, the substrate processing apparatus that can process two types of substrates W having different sizes has been described. However, the substrate processing apparatus can process three or more types of substrates W having different sizes. A processable configuration may be used.
In addition, various design changes can be made within the scope of the matters described in the claims.

1: substrate processing apparatus 7: control apparatus 10: detection unit (size detection unit, thickness detection unit)
13: Center chuck (support unit)
15: Base 16: Processing chamber 5, 5A to 5D: Adapter ring 57: Annular surface 201: Substrate processing apparatus 260: Ring lifting unit (ring moving unit, processing chamber moving unit)
261: Inner ring (concentric ring)
262: Outer ring (concentric ring)
265: Inner annular surface 268: Outer annular surface 301: Substrate processing apparatus 305: Ring 313: Center chuck (support unit, support member)
315: Base 357: Annular surface 362: Relay shaft (common member)
367: Center chuck (support unit, support member)
368: ring 369: base 385: annular surface B2: accommodation block (accommodation chamber)
R1: Replacement robot (ring moving unit, transport unit)
W: Substrate

Claims (9)

A support unit for horizontally supporting a substrate of an arbitrary size;
A plurality of rings each having an upwardly facing annular surface;
The plurality of rings include a plurality of size adjustment rings having different inner peripheral lengths of the annular surface, and the inner peripheral edge is close to the peripheral edge of the substrate supported by the support unit. Any one of the plurality of rings is disposed around the substrate supported by the support unit such that a surface horizontally surrounds the substrate .
The plurality of rings constitute a plurality of groups each including the plurality of size adjustment rings, and each group has a plurality of thicknesses having the same inner peripheral edge length and different annular surface heights. that is composed of the adjustment ring, the substrate processing apparatus.   The substrate processing apparatus according to claim 1, further comprising a ring moving unit that moves the plurality of rings and arranges any one of the plurality of rings around a substrate supported by the support unit. A processing chamber containing the support unit;
A storage chamber for storing the plurality of rings;
The substrate processing apparatus according to claim 2, wherein the ring moving unit includes a transfer unit that transfers the plurality of rings between the processing chamber and the storage chamber. A processing chamber for accommodating the support unit and the plurality of rings;
The substrate processing apparatus according to claim 2, wherein the ring moving unit includes a processing chamber moving unit that moves the plurality of rings in the processing chamber. A size detection unit for detecting the size of the substrate;
The substrate processing apparatus according to claim 2, further comprising a control device that controls the ring moving unit based on a detection value of the size detection unit. A thickness detection unit for detecting the thickness of the substrate;
A ring moving unit that moves the plurality of rings and arranges any one of the plurality of rings around a substrate supported by the support unit;
The substrate processing apparatus as described in any one of Claims 1-5 further including the control apparatus which controls the said ring movement unit based on the detected value of the said thickness detection unit. Further comprising, a substrate processing apparatus according to any one of claims 1 to 6 base for supporting removably either one of said ring about said support unit. A support unit for horizontally supporting a substrate of an arbitrary size;
A plurality of rings each having an upwardly facing annular surface;
The plurality of rings include a plurality of size adjustment rings having different inner peripheral lengths of the annular surface, and the inner peripheral edge is close to the peripheral edge of the substrate supported by the support unit. Any one of the plurality of rings is disposed around the substrate supported by the support unit such that a surface horizontally surrounds the substrate.
Wherein the plurality of size adjustment ring, said surrounds the support unit concentrically, each containing vertically movably supported by a plurality of concentric rings, the substrate processing apparatus. A substrate processing apparatus for processing a substrate,
The substrate processing apparatus includes a support unit that horizontally supports a substrate of an arbitrary size, and a plurality of rings each having an upward annular surface,
The plurality of rings include a plurality of size adjustment rings having different inner peripheral lengths of the annular surface, and the inner peripheral edge is close to the peripheral edge of the substrate supported by the support unit. Any one of the plurality of rings is disposed around the substrate supported by the support unit such that a surface horizontally surrounds the substrate.
The support unit includes a plurality of support members that horizontally support a substrate of an arbitrary size,
The substrate processing apparatus includes: a common member to which any one of the plurality of support members is detachably attached; and connecting the plurality of rings to the plurality of support members, thereby connecting the ring and the support member. further comprising a plurality of base for unitizing, the substrate processing apparatus.

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