JP4476217B2 - Substrate processing equipment - Google Patents

Description

  The present invention relates to a substrate processing apparatus for performing a predetermined process on a substrate by supplying a processing liquid to the substrate while rotating the substrate. The substrate includes various substrates such as a semiconductor wafer, a photomask glass substrate, a liquid crystal display glass substrate, a plasma display glass substrate, and an optical disk substrate.

  In a manufacturing process of a semiconductor device or a liquid crystal display device, a thin film (unnecessary material) that is undesirably formed on a substrate is etched away by supplying a chemical solution such as hydrofluoric acid as a processing solution to the substrate. There is. Thus, in order to remove the thin film formed on such a substrate, for example, a substrate processing apparatus described in Patent Document 1 has been proposed.

  In this substrate processing apparatus, the substrate is held in a substantially horizontal state by the substrate holding unit. A rotation shaft extending in the vertical direction is attached to the substrate holding portion. By rotating the rotation shaft with a motor, the substrate holding portion holds the substrate in a state where the substrate center and the rotation shaft are substantially aligned. The substrate is rotated by rotating while being held. Further, a chemical solution supply nozzle is disposed above the substrate held by the substrate holding unit, and supplies the chemical solution near the center of the substrate (the center of rotation of the upper surface of the substrate). At this time, the chemical solution supplied in the vicinity of the center of the upper surface of the substrate is diffused by the action of centrifugal force accompanying the rotation of the substrate and spreads over the entire upper surface of the substrate, so that the etching process is performed on the substrate.

JP 2001-237214 A (FIG. 1)

  By the way, when the etching process is performed on the substrate as described above, it is required to uniformly etch the surface of the upper surface of the substrate. Therefore, in order to improve the in-plane uniformity of the etching process on the upper surface of the substrate, the chemical solution is quickly spread to each part of the upper surface of the substrate, that is, the time difference until the chemical solution is supplied to each part of the upper surface of the substrate is reduced, It is important to make the amount of chemicals supplied to each part of the upper surface of the substrate uniform.

  However, in the conventional apparatus, the chemical solution supplied from the chemical solution supply nozzle to the vicinity of the center of the substrate is diffused by the action of centrifugal force to supply the chemical solution to the edge portion of the substrate. There was a time difference between the time until the time until the chemical solution was supplied to the edge of the substrate. In particular, when the substrate is a square substrate such as a glass substrate for liquid crystal display, the chemical solution is supplied near the center of the square substrate and at the corners (four corners) of the square substrate. There was a big time difference in the time. Further, since the chemical solution supplied from the chemical solution supply nozzle to the vicinity of the substrate center is diffused to the edge portion of the substrate, the chemical solution amount per unit area supplied to the substrate center portion is supplied to the substrate edge portion. The amount of chemical solution per unit area was small. As a result, in the conventional apparatus, it has been impeded to treat the entire upper surface of the substrate uniformly.

  Therefore, in the conventional apparatus, the following can be considered in order to improve the processing uniformity. That is, it is conceivable to increase the amount of the chemical solution supplied to the upper surface of the substrate so that the chemical solution necessary for the processing is sufficiently supplied also to the edge portion of the substrate. However, increasing the consumption of the chemical solution in this way directly leads to an increase in running cost, and also places a corresponding burden on the equipment required for the drainage treatment of the chemical solution discharged from the substrate. In addition, it is conceivable to increase the rotation speed of the substrate and diffuse the chemical supplied near the center of the substrate quickly to the edge of the substrate, but the apparatus configuration becomes complicated in order to cope with the high-speed rotation of the substrate, Further durability is required for the component parts of the apparatus, which is not practical. In particular, as the substrate size increases, the distance from the center of the substrate to the edge of the substrate becomes longer, and there is a limit to increasing the rotation speed of the substrate to achieve uniform processing.

  On the other hand, as a method for improving the uniformity of processing without increasing the amount of the chemical solution supplied to the substrate and / or the rotation speed of the substrate, the substrate is rotated in a horizontal position while the chemical solution supply nozzle faces the upper surface of the substrate. On the other hand, it is also conceivable to move the chemical supply nozzle horizontally. Specifically, while supplying the chemical liquid from the chemical liquid supply nozzle, the chemical liquid supply nozzle is reciprocated between a position corresponding to the center portion of the substrate and a position corresponding to the edge portion of the substrate, thereby making the processing uniform. It is possible to plan. However, in this case, for example, when the chemical solution supply nozzle supplies the chemical solution to the edge portion of the substrate, the chemical solution is not supplied to the center portion of the substrate, and the chemical solution flows from the substrate center to the edge portion by centrifugal force. Therefore, there has been a problem that the central portion of the substrate is partially dried. As a result, the uniformity of processing is deteriorated.

  The present invention has been made in view of the above problems, and an object thereof is to provide a substrate processing apparatus capable of uniformly processing the entire upper surface of a substrate with a small amount of processing liquid.

  One aspect of a substrate processing apparatus according to the present invention is a substrate processing apparatus that performs a predetermined process on a substrate by supplying a processing liquid to the substrate while rotating the substrate in a substantially horizontal posture, and achieves the above object. Therefore, a substrate holding means for holding the substrate in a substantially horizontal posture, a rotation driving means for rotating the substrate holding means to rotate the substrate around a predetermined rotation center, and an upper surface of the substrate rotated by the rotation driving means The first discharge means for discharging the processing liquid in a row along a predetermined arrangement direction substantially parallel to the rotational radius direction of the substrate, and the second discharge means for discharging the processing liquid toward the rotation center of the upper surface of the substrate And a line extending in the rotation radius direction of the substrate through the rotation center of the substrate is defined as a rotation radius line, and the processing liquid constituting the row processing liquid discharged from the first discharge means and landing on the upper surface of the substrate Whether each landing position is on the turning radius line It is characterized in that is offset by a predetermined distance along the offset direction orthogonal to the rotating radial line.

  In the invention configured as described above, the processing liquid (column-shaped processing liquid) is discharged in a row along the direction substantially parallel to the rotational radius direction of the substrate from the first discharge means toward the upper surface of the substrate. The treatment liquid is simultaneously deposited on the upper surface of the substrate over a relatively wide range. Therefore, it is possible to supply a predetermined amount of processing liquid to each part on the upper surface of the substrate while minimizing a time difference until the processing liquid is supplied to each part on the upper surface of the substrate. In addition, the liquid landing positions of the processing liquids constituting the row processing liquid are not on the rotation radius line extending in the rotation radius direction of the substrate through the rotation center of the substrate, but perpendicular to the rotation radius line from the rotation radius line. It is shifted by a predetermined distance along the direction (offset direction). Thus, the following advantages can be obtained by applying the row processing liquid. That is, the treatment liquid that has landed on the upper surface of the substrate is in a direction according to a vector in which a reaction force acting in the direction opposite to the rotation direction of the substrate accompanying the rotation of the substrate and a centrifugal force acting in the rotation radial direction are combined. And it flows on the upper surface of the substrate along the magnitude of the force and is discharged out of the substrate. Here, in the case where each of the processing liquids constituting the row processing liquid is deposited on the rotation radius line, the direction of the centrifugal force (rotation) acting on each processing liquid (droplet) constituting the row processing liquid (Radial direction) are all in the same direction. On the other hand, the centrifugal force acting on each of the processing liquids constituting the row processing liquid is obtained by shifting each of the processing liquids constituting the row processing liquid from the rotational radius line as in the present invention. The directions (rotating radial directions) are different from each other. As a result, the loci of the processing liquid (droplets) after landing on the upper surface of the substrate are different from each other, and the uniform dispersion of the processing liquid on the upper surface of the substrate is promoted.

  Further, according to the present invention, the second discharge means is provided in addition to the first discharge means, and the processing liquid is discharged from the second discharge means toward the rotation center of the upper surface of the substrate. For this reason, the processing liquid discharged from the first discharge means and deposited on the upper surface of the substrate cannot be sufficiently supplied to the rotation center of the substrate, or the locus of the processing liquid deposited on the upper surface of the substrate deviates from the rotation center of the substrate. Even in this case, the central portion of the substrate can be reliably processed by supplying the processing liquid to the rotation center of the substrate by the processing liquid discharged by the second discharge means. Note that the first and second ejection means may be configured separately and arranged separately, or may be configured integrally and arranged.

  As described above, according to the present invention, the central portion of the substrate is reliably processed by the processing liquid discharged from the second discharge means, while the columnar processing liquid discharged from the first discharge means is applied to each part on the upper surface of the substrate. The processing liquid can be supplied promptly, and the upper surface of the substrate can be processed uniformly. Therefore, the entire substrate upper surface can be processed uniformly with a small amount of processing liquid without increasing the amount of processing liquid supplied to the substrate upper surface.

  Here, the columnar processing liquid discharged from the first discharge means in any one of four quadrants defined by dividing the upper surface of the substrate by a line extending in the offset direction through the rotation center of the substrate and a rotation radius line. The landing position may be limited. Even if the liquid deposition position of the row processing liquid is limited to such a range, the entire upper surface of the substrate can be processed uniformly by rotating the substrate. Furthermore, the consumption amount of the processing liquid can be effectively reduced by limiting the landing position of the row processing liquid.

  Moreover, the discharge direction of the processing liquid discharged from the first discharge means is arbitrary. For example, the processing liquid may be discharged perpendicularly to the upper surface of the substrate, or the processing liquid may be discharged in a line from obliquely upward along the rotation direction of the substrate with respect to the upper surface of the substrate. However, the following effects can be obtained by discharging the treatment liquid as in the latter case. In other words, by discharging the processing liquid along the rotation direction of the substrate, the processing liquid that has landed on the upper surface of the substrate causes the reaction force acting in the direction opposite to the rotation direction of the substrate accompanying the rotation of the substrate and the rotational radius direction. While receiving the centrifugal force that acts, it is spread to the front side in the discharge direction along the discharge direction that follows the rotation direction. Therefore, the processing liquid can be uniformly dispersed in a wider range with a small amount of processing liquid, and the uniformity of the supply amount of the processing liquid per unit area supplied to each part on the upper surface of the substrate can be further improved. Further, when the processing liquid is discharged perpendicularly to the upper surface of the substrate, the processing liquid discharged toward the upper surface of the substrate and landing on the upper surface of the substrate is prevented from interfering with the processing liquid already supplied to the upper surface of the substrate. be able to. For example, due to the collision between the processing liquid that has landed on the top surface of the substrate and the processing liquid that has adhered to the top surface of the substrate that has moved to the landing position as the substrate rotates, the liquid level of the processing liquid on the top surface of the substrate has risen, resulting in uniform processing However, the occurrence of such a phenomenon can be prevented.

  In addition, it is desirable to provide a porous nozzle having a plurality of discharge holes along the arrangement direction substantially parallel to the rotational radius direction of the substrate as the first discharge means, and discharge the processing liquid from each of the plurality of discharge holes. According to such a configuration, the processing liquid can be supplied to the substrates in a line along the above-described arrangement direction. For example, a substantially circular substrate such as a semiconductor wafer can be used as well as a glass substrate for liquid crystal display. When the processing liquid is supplied to the square substrate, the processing liquid can be reliably distributed to the edge of the substrate, and the substrate can be processed uniformly while suppressing waste of the processing liquid. .

  Here, when processing a rectangular rectangular substrate, the length in the arrangement direction of the columnar processing liquid discharged from the first discharge means and landing on the upper surface of the rectangular substrate is set to half the short side of the rectangular substrate. It is preferable to make it below this length. According to such a configuration, it becomes possible to reliably deposit the columnar processing liquid on the upper surface of the rotated rectangular substrate, and the following effects can be obtained. That is, if the length of the row processing liquid in the arrangement direction is longer than half the length of the short side of the square substrate, of the row processing liquid discharged from the first discharge means with the rotation of the substrate. A state occurs in which a part of the processing liquid on the edge side is not supplied to the upper surface of the substrate (for example, when the arrangement direction of the row processing liquid and the short side direction of the square substrate are parallel). When the substrate is further rotated from this state, the corners (four corners) of the square substrate cut off the processing liquid on the edge side of the substrate discharged from the first discharge means from the side, and the processing liquid rebounds. Let For this reason, it is possible to uniformly treat the substrate by preventing the rebound of the processing liquid by reliably depositing the row processing liquid on the upper surface of the square substrate. In particular, when the substrate size is large, the linear velocity at the corners also increases. Therefore, setting the length in the arrangement direction of the row processing liquid as described above is extremely effective for preventing the processing liquid from rebounding. Effective.

  Another aspect of the substrate processing apparatus according to the present invention is a substrate processing apparatus for performing a predetermined process on a substrate by supplying a processing liquid to the substrate while rotating the substrate in a substantially horizontal posture. To achieve this, a substrate holding means for holding the substrate in a substantially horizontal posture, a rotation driving means for rotating the substrate holding means to rotate the substrate around a predetermined rotation center, and an upper surface of the substrate rotated by the rotation driving means A discharge means for discharging the processing liquid in a row along a direction substantially parallel to the rotational radius direction of the substrate, and obliquely upward from the upper surface of the substrate along the rotation direction of the substrate. Each of the processing liquids constituting the row processing liquid discharged from the substrate and landing on the upper surface of the substrate has a position where the rotation radius line is a line extending in the rotation radius direction of the substrate through the rotation center of the substrate. The following first and It is characterized by satisfying the second condition.

Here, the first condition is that a predetermined distance is shifted in a direction opposite to the rotation direction of the substrate in an offset direction orthogonal to the rotation radius line from a line extending to one side of the rotation center of the rotation radius line. It is the composition which is. In addition, the second condition is that the end of the liquid deposition position on the rotation center side of the substrate is located at the rotation center of the substrate in the direction in which the rotation radius line extends with respect to the line extending in the offset direction through the rotation center of the substrate. On the other hand, it is the structure located in the other side opposite to one side.

  According to such a configuration, since the processing liquid (column-shaped processing liquid) is discharged in a row along the arrangement direction substantially parallel to the rotation radius direction of the substrate from the discharge means, the upper surface of the substrate is spread over a relatively wide range. The processing liquid can be supplied while minimizing the time difference until the processing liquid is supplied to each part.

  Further, by satisfying the first condition, the direction of the centrifugal force (rotational radius direction) acting on each of the droplets of the processing liquid constituting the row processing liquid deposited on the upper surface of the substrate is different from each other. Become. As a result, the loci of the processing liquid (droplets) deposited on the upper surface of the substrate are different from each other, and the uniform dispersion of the processing liquid on the upper surface of the substrate is promoted. Further, by discharging the processing liquid along the rotation direction of the substrate, the processing liquid that has landed on the upper surface of the substrate is spread to the front side in the discharging direction along the discharging direction. Therefore, the treatment liquid can be uniformly dispersed in a wider range with a small amount of the treatment liquid.

  In addition, by satisfying the second condition, the processing liquid positioned at the end of the rotation center side of the substrate out of the row processing liquid that has landed on the upper surface of the substrate passes through the rotation center of the substrate, and the edge side of the substrate It flows to. Specifically, in addition to the force acting in the ejection direction from the ejection means, the reaction force acting in the opposite direction to the rotation direction of the substrate accompanying the rotation of the substrate and the centrifugal force acting in the rotational radius direction The processing liquid is supplied to the central portion of the substrate and discharged out of the substrate while being dispersed.

  Therefore, by satisfying the first and second conditions, the processing liquid can be quickly supplied to each part of the upper surface of the substrate by the row processing liquid while the central portion of the substrate is reliably processed, and the upper surface of the substrate is made uniform. It is possible to process. As a result, the substrate can be processed uniformly with a small amount of processing liquid without increasing the amount of processing liquid supplied to the upper surface of the substrate.

  Here, in order to uniformly process the substrate while suppressing waste of the processing liquid, a porous nozzle having a plurality of discharge holes provided in an arrangement direction substantially parallel to the rotation radius direction of the substrate is provided as a discharge means. The processing liquid may be discharged from each of the plurality of discharge holes.

When processing a rectangular rectangular substrate, it is preferable to set the length L in the arrangement direction of the row processing liquid discharged from the discharge means and landing on the upper surface of the substrate so as to satisfy the following conditions. . That means
L ≦ Re · sin θ + (Wn / 2)
However,
Re: Distance from the center of rotation of the square substrate to the end landing liquid position on the rotation center side of the square substrate of the row processing liquid,
θ: A line segment connecting the rotation center of the square substrate and the end landing liquid position on the rotation substrate side of the square substrate of the row processing liquid, and a line extending in the offset direction through the rotation center of the square substrate The corner to make,
Wn: The length of the short side of the square substrate,
It is preferable to set to.

  According to such a configuration, it is possible to reliably deposit the columnar processing liquid on the upper surface of the rotated square substrate, and the corners (four corners) of the rotated square substrate are ejecting means. It is possible to prevent the processing liquid on the edge side of the substrate discharged from the substrate from being cut off. As a result, the processing liquid can be prevented from being rebounded and the substrate can be processed uniformly.

  According to the present invention, the processing liquid is supplied with the time difference until the processing liquid is supplied to each part of the upper surface of the substrate over a relatively wide range by discharging the processing liquid in a row on the upper surface of the substrate. In addition, by shifting the landing position of each of the processing liquids constituting the row processing liquid to be deposited on the upper surface of the substrate from the rotational radius line by a predetermined distance along the offset direction orthogonal to the rotational radius line, Uniform dispersion of the treatment liquid can be promoted. Furthermore, by supplying the processing liquid toward the center of the substrate, the center portion of the substrate is reliably processed. Therefore, while the central portion of the substrate is reliably processed, the processing liquid can be quickly supplied to each part of the upper surface of the substrate by the row processing liquid, and the entire upper surface of the substrate can be processed uniformly with a small amount of the processing liquid. it can.

<First Embodiment>
FIG. 1 is a diagram showing a first embodiment of a substrate processing apparatus according to the present invention. This substrate processing apparatus supplies a chemical solution such as dilute hydrofluoric acid as a processing solution to an LCD glass substrate W (hereinafter simply referred to as “substrate W”), which is a rectangular square substrate, This is an apparatus for etching away a thin film (unnecessary material) formed as desired. As shown in FIG. 1, this apparatus includes a substrate holding unit 1 (substrate holding unit) that holds a substrate W in a substantially horizontal posture, a rotation driving unit 2 that rotationally drives the substrate holding unit 1, and a substrate holding unit 1. The liquid discharge nozzle unit 3 for supplying the processing liquid to the upper surface of the substrate W held on the substrate, the nozzle drive unit 4 for moving the liquid discharge nozzle unit 3 in the vertical direction and the horizontal direction, and the liquid shaken off from the substrate W are collected. The cup part 5, the housing 6 which accommodates each part of each apparatus, and the control part (illustration omitted) which controls the whole apparatus are provided.

  The substrate holding unit 1 includes a substrate support plate 11 having a plane size comparable to that of the substrate W, peripheral support pins 12 that are fixed to the upper surface of the substrate support plate 11 and support the peripheral portion of the substrate W, and substrate support A central support pin 13 is provided that is fixed to the upper surface of the plate 11 and supports the central portion of the lower surface of the substrate W. Further, the substrate holding unit 1 is made of a chemical resistant resin in consideration of performing an etching process.

  The peripheral support pins 12 are arranged corresponding to the four corners of the substrate W. Each peripheral support pin 12 has a support stand 121 that supports the outer peripheral edge of the substrate W from below, and a guide rising surface 122 that abuts the outer peripheral end surface of the substrate W supported by the support stand 121 and restricts the movement of the substrate W. And the peripheral edge of the substrate W is supported at four locations. In FIG. 1, only two peripheral support pins 12 are shown in order to avoid a complicated drawing. Further, four central support pins 13 are arranged on the substrate support plate 11 corresponding to the central portion of the substrate W. The number of central support pins 13 is not limited to four.

  The upper end of the hollow cylindrical shaft 21 is attached to the lower surface of the substrate support plate 11. The lower end portion of the cylindrical shaft 21 is configured to transmit the rotational driving force of the motor 23 via the belt mechanism 22. For this reason, by driving the motor 23, the substrate W held on the substrate support plate 11 is rotated around the rotation center (center of the substrate W) A0. Thus, in this embodiment, the rotation drive unit 2 including the motor 23 and the belt mechanism 22 functions as the “rotation drive unit” of the present invention.

  Moreover, the cylinder shaft 21 is comprised by the member of a hollow cylinder shape, and the liquid nozzle 16 is arrange | positioned along the center. The liquid supply pipe 161 is penetrated through the liquid nozzle 16, and the upper end of the liquid supply pipe 161 faces the center of the lower surface of the substrate W. A chemical solution or a cleaning solution can be supplied as a processing solution in the vicinity of the rotation center. Here, pure water or the like is used as the cleaning liquid.

  Further, the cylindrical shaft 21 extends toward the opening of the substrate support plate 11, and the discharge port 17 is opened by being positioned above the substrate support plate 11. The gap between the cylinder shaft 21 and the liquid nozzle 16 is configured such that the pipe 86 is opened to an atmospheric pressure atmosphere via a flow rate adjusting valve 86a. At the discharge port 17, air from an atmospheric pressure atmosphere is discharged from the gap between the side surface of the liquid nozzle 16 and the inner peripheral surface of the cylindrical shaft 21. Further, the tip of the liquid nozzle 16 is formed in a T-shaped cross section, and a nozzle hole 162 for processing liquid is opened at the center of the flat upper surface.

  The liquid nozzle 16 is connected to the pipe 80. The base end portion of the pipe 80 is branched into two, a chemical supply source 81 is connected to the first branch pipe 80a, and a pure water supply source 82 is connected to the second branch pipe 80b. . The branch pipes 80a and 80b are provided with on-off valves 83a and 83b, respectively. Then, the opening / closing valve 83b is opened in response to the opening / closing command from the control unit, and the opening / closing valve 83a is closed, whereby the cleaning liquid (pure water) is pumped to the liquid nozzle 16 via the pipe 80, and the nozzle hole 162 of the liquid nozzle 16 is supplied. To the bottom surface of the substrate W. Further, the chemical liquid can be supplied from the nozzle hole 162 of the liquid nozzle 16 toward the lower surface of the substrate W by opening the on-off valve 83a and closing the on-off valve 83b in response to an open / close command from the control unit.

  The gas supply path 163 is provided in the liquid nozzle 16, and the lower end portion thereof is connected to the gas supply source 85 through a pipe 84 provided with an on-off valve 84 a. A clean gas such as clean air or a clean inert gas (nitrogen gas or the like) can be supplied to the space between the substrate support plate 11 and the lower surface of the substrate W from the discharge port at the upper end. .

  The motor 23, the belt mechanism 22 and the like are accommodated in a cylindrical casing 62 provided on a base member 61 as a bottom plate of the substrate processing apparatus. The casing 62 is connected to the outer peripheral surface of the cylindrical shaft 21 via a bearing 63 and covers the cylindrical shaft 21. That is, the periphery of the cylinder shaft 21 from the motor 23 to just before the connection to the substrate support plate 11 is covered with the casing 62, and the motor 23 attached to the cylinder shaft 21 below is also covered with the cover.

  The liquid discharge nozzle unit 3 includes a nozzle main body 30, and the nozzle main body 30 is disposed above the substrate W held by the substrate holding unit 1 so as to be movable in the vertical and horizontal directions. The nozzle body 30 is attached to the tip of the support arm 7, and the nozzle drive unit 4 is connected to the other end of the support arm 7. Therefore, when the nozzle driving unit 4 is driven, a processing position that will be described later for the nozzle body 30 and a retreat position that is retracted from the substrate holding unit 1 when the substrate W is loaded and unloaded by the substrate transport unit (not shown). It is configured to be movable between. The nozzle drive unit 4 includes a horizontal movement drive source 41 that horizontally moves the nozzle body 30 and the support arm 7 integrally, and a lift drive source 42 that integrally moves the nozzle body 30 and the support arm 7 up and down. It has. With these configurations, the nozzle body 30 can be horizontally moved parallel to the upper surface of the substrate W by driving the horizontal movement drive source 41 and can be moved up and down by driving the lifting drive source 42.

  Similarly to the liquid nozzle 16 side, the liquid discharge nozzle unit 3 can selectively switch between the chemical liquid and the cleaning liquid and supply it to the upper surface of the substrate W. That is, the liquid supply pipe 31 is connected to the nozzle body 30, and the processing liquid pumped from the liquid supply pipe 31 to the nozzle body 30 can be supplied from the nozzle body 30 to the upper surface of the substrate W held on the substrate holding unit 1. It is configured as follows. The liquid supply pipe 31 is connected to the pipe 87. The base end portion of the pipe 87 is branched into two, the chemical solution supply source 81 is connected to the first branch pipe 87a, and the pure water supply source 82 is connected to the second branch pipe 87b. ing. The branch pipes 87a and 87b are provided with on-off valves 88a and 88b, respectively. Then, the cleaning liquid (pure water) is supplied from the nozzle body 30 toward the upper surface of the substrate W by opening the on-off valve 88b and closing the on-off valve 88a in response to an opening / closing command from the control unit. Further, the chemical solution can be supplied from the nozzle body 30 toward the upper surface of the substrate W by opening the on-off valve 88a and closing the on-off valve 88b in response to an open / close command from the control unit.

  FIG. 2 is a perspective view showing the configuration of the liquid discharge nozzle part and the liquid landing position on the substrate upper surface of the processing liquid discharged from the liquid discharge nozzle part, and FIG. 3 is a plan view thereof. Specifically, in FIGS. 2 and 3, the liquid discharge nozzle unit 3 is positioned at a processing position immediately above the substrate W by driving the nozzle driving unit 4, and the substrate is moved from the liquid discharge nozzle unit 3 to the substrate at the processing position. A mode that the process liquid is discharged toward the upper surface of W is shown.

  The nozzle body 30 is formed in a cylindrical shape extending in the arrangement direction X ((+ X) direction and (−X) direction) substantially parallel to the rotational radius direction of the substrate W, and includes the multi-hole nozzle 32 and the center processing nozzle 33. I have. The multi-hole nozzle 32 and the center processing nozzle 33 are coupled along the arrangement direction X of the substrates W and are integrally formed. In other words, the processing liquid is pumped from the liquid supply pipe 31 to the nozzle body 30 so that the processing liquid is discharged from the porous nozzle 32 and the central processing nozzle 33 toward the upper surface of the substrate W.

  The multi-hole nozzle 32 is provided with a plurality of discharge pipes 321 at regular intervals in a line along the arrangement direction X. Each of these discharge pipes 321 is configured in a thin cylindrical shape extending along a discharge direction, which will be described later, in order to improve the straightness of the processing liquid discharged from the discharge pipe 321. Accordingly, it is possible to prevent the landing positions where the processing liquid is discharged from the discharge pipes 321 and the processing liquid is deposited on the upper surface of the substrate W from overlapping each other and interfering with each other. The opening diameter of the discharge hole 321a opened at the tip of the discharge pipe 321 is about φ1 to 2 mm for the purpose of reducing the flow rate (discharge amount) of the processing liquid. Therefore, when the processing liquid is pumped from the liquid supply pipe 31 to the nozzle body 30, the processing liquid is simultaneously discharged from the discharge holes 321 a of the plurality of discharge pipes 321 along the discharge direction and arranged on the upper surface of the substrate W. The processing liquid is supplied in a line along the direction X. Thus, in this embodiment, the perforated nozzle 32 functions as the “first discharge means” of the present invention.

  On the other hand, a discharge pipe 331 extends from the center processing nozzle 33, and the discharge hole 331 a opened at the tip of the discharge pipe 331 is directed to the center of the upper surface of the substrate W (rotation center A 0). Therefore, when the processing liquid is pumped from the liquid supply pipe 31 to the nozzle body 30, the processing liquid is discharged from the discharge hole 331a toward the rotation center A0 of the substrate W, and the processing liquid is supplied to the central portion of the substrate W. The Thus, in this embodiment, the center processing nozzle 33 functions as the “second discharge means” of the present invention.

  FIG. 4 is a diagram for explaining the discharge direction of the processing liquid discharged from the porous nozzle. The processing liquid discharged from each discharge pipe 321 of the porous nozzle 32 is incident obliquely from above on the upper surface of the substrate W along the rotation direction A of the substrate W. At this time, an angle α formed by the upper surface of the substrate W and the discharge direction F of the processing liquid is set to approximately 30 ° to 60 °. In this way, by discharging the processing liquid, the processing liquid that has landed on the upper surface of the substrate W acts in the direction of the rotational radius and the reaction force acting in the direction opposite to the rotation direction A of the substrate accompanying the rotation of the substrate W. While receiving the centrifugal force, it is pushed and spread toward the front side of the discharge direction F along the discharge direction F following the rotation direction A.

  Next, returning to FIG. 2 and FIG. 3, the position of the treatment liquid discharged from the porous nozzle 32 on the upper surface of the substrate W will be described. Here, among arbitrary virtual lines extending in the rotational radius direction of the substrate W through the rotational center A0 of the substrate W, a virtual line parallel to the arrangement direction (X direction) of the nozzle bodies 30 is defined as the rotational radius line RL. The position where the processing liquid is discharged from the porous nozzle 32 will be described with reference to the rotation radius line RL. Here, the rotation radius line RL is introduced for convenience in order to specify the landing position of the processing liquid that is deposited on the upper surface of the substrate W, and the rotation radius line RL itself is the substrate W and the porous nozzle. 32 (arrangement direction X) is arbitrarily drawn according to the arrangement relationship with the arrangement direction X and is not specified with respect to the position of the substrate W.

  The liquid landing positions of the processing liquids (droplets) constituting the row processing liquid discharged from the porous nozzle 32 and landing on the upper surface of the substrate W are not rotated on the rotational radius line RL but on the rotational radius line RL. The offset direction Y ((+ Y) direction and (−Y) direction) orthogonal to the radial line RL is shifted by a predetermined distance S1 (hereinafter referred to as “offset distance”). That is, the processing liquid is discharged from the porous nozzle 32 so that the row processing liquid is deposited at a position shifted by the offset distance S1 in the Y direction from the rotation radius line RL.

  Further, the liquid deposition position of the row processing liquid is limited on the upper surface of the substrate W as follows. That is, among the four quadrants W1 to W4 defined by dividing the upper surface of the substrate W by the line CL extending in the Y direction through the rotation center A0 of the substrate W and the rotation radius line RL, The liquid position is limited to a region in the quadrant W2. This is to suppress the request for discharging the processing liquid to the upper surface of the substrate W along the rotation direction A of the substrate W and the consumption of the processing liquid. In this way, even if the liquid deposition position of the row processing liquid is limited, the processing liquid deposited by the rotation of the substrate W is diffused, and the entire upper surface of the substrate W is combined with the processing liquid supplied from the central processing nozzle 33. Can be processed. In addition, as long as the center portion of the substrate W is processed by the center processing nozzle 33, the liquid deposition position of the columnar processing liquid discharged from the porous nozzle 32 may be limited to a region in the quadrant W1.

  Further, the processing liquid is discharged from the porous nozzle 32 so that the length L1 in the X direction of the columnar processing liquid that adheres to the upper surface of the substrate W is equal to or less than half the length Wn of the short side of the substrate W. Yes. In this way, by defining the length L1 of the row processing liquid, it is possible to reliably deposit the row processing liquid on the upper surface of the rotated substrate W.

  Next, the operation of the substrate processing apparatus configured as described above will be described. Here, a case will be described in which a chemical solution such as dilute hydrofluoric acid is supplied as a processing solution to the substrate W held on the substrate holding unit 1 to remove an undesired thin film formed on the upper surface of the substrate W by etching.

  When the unprocessed substrate W is carried into the apparatus by the substrate transport unit and is held by the substrate holding unit 1, the nozzle body 30 is moved from the retracted position to the processing position by driving the nozzle driving unit 4. The substrate W held by the substrate holder 1 is rotated at a predetermined rotation speed around the rotation center A0 of the substrate W by driving the motor 23. In such an etching process, the rotation speed of the substrate W is set to approximately 50 to 200 rpm, preferably 50 to 150 rpm.

  Subsequently, the chemical liquid is discharged from the nozzle body 30 toward the upper surface of the substrate W. Specifically, the chemical solution is discharged from the perforated nozzle 32 to the upper surface of the substrate W along the rotational direction A of the substrate W in a row (in a row) obliquely from above, and from the central processing nozzle 33 to the substrate W. The chemical solution is discharged toward the rotation center A0 on the upper surface. Each of the chemical liquids (droplets) constituting the columnar chemical liquid discharged from the multi-hole nozzle 32 is deposited on the upper surface of the substrate W at a position shifted by the offset distance S from the rotation radius line RL in the (+ Y) direction. Here, when the substrate W is a so-called fourth generation (substrate size: 730 mm × 920 mm) glass substrate, the offset distance S is preferably set to approximately 40 mm to 60 mm from the viewpoint of processing uniformity. is there. Of course, the offset distance S is appropriately set to an appropriate distance according to the substrate size to be processed.

FIG. 5 is a schematic diagram showing the direction of the force acting on the chemical liquid discharged from the porous nozzle and landing on the upper surface of the substrate. (1) Reaction forces fr ₁ , fr ₂ ,... Fr _n acting on the respective chemical liquids (droplets) constituting the columnar chemical liquid deposited on the upper surface of the substrate W (1) acting in the direction opposite to the rotation direction A of the substrate W. (2) Centrifugal forces fc ₁ , fc ₂ ,... Fc _n acting in the rotational radius direction, and (3) Forces fd ₁ , fd ₂ ,... Fd _n acting in the discharge direction F following the rotational direction A Flows on the upper surface of the substrate W along the direction and magnitude of the force according to the synthesized vector, and is discharged out of the substrate. Here, if each of the chemical liquids constituting the row chemical liquid is deposited on the rotation radius line RL, the direction of the centrifugal force acting on each chemical liquid (droplet) constituting the row chemical liquid (rotation radius) (Direction) are all in the same direction. On the other hand, as shown in FIG. 5, each of the chemical liquids constituting the lined chemical liquid is shifted in the Y direction from the rotation radius line RL, and is applied to each of the chemical liquids constituting the lined chemical liquid. The directions of the forces fc ₁ , fc ₂ ,... Fc _n (rotating radial direction) are different from each other. As a result, the trajectories of the chemical liquid (droplets) after landing on the upper surface of the substrate W are different from each other, and uniform dispersion of the chemical liquid on the upper surface of the substrate W is promoted.

  Moreover, since the chemical solution is discharged obliquely from above along the rotation direction A of the substrate W, the chemical solution that has landed on the upper surface of the substrate W follows the discharge direction F along the rotation direction A. It is pushed to the side. Therefore, the chemical solution can be uniformly dispersed in a wider range with a small amount of the chemical solution, and the uniformity of the supply amount of the chemical solution per unit area supplied to each part on the upper surface of the substrate W can be further improved. Furthermore, the following advantageous effects are obtained when the chemical liquid is discharged perpendicularly to the upper surface of the substrate W. In other words, it is possible to suppress the chemical liquid discharged toward the upper surface of the substrate W and landing on the upper surface of the substrate W from interfering with the chemical liquid already supplied to the upper surface of the substrate W. For example, the liquid surface of the chemical liquid swells on the upper surface of the substrate W due to a collision between the chemical liquid that adheres to the upper surface of the substrate W and the chemical liquid that adheres to the upper surface of the substrate W that moves to the landing position as the substrate W rotates. Although the uniformity of the etching process may be deteriorated, the occurrence of such a phenomenon can be prevented.

  In addition, the length L1 in the arrangement direction (X direction) of the row chemicals that are deposited on the upper surface of the substrate W is less than half the length Wn of the short side of the substrate W that is a square substrate. The row of chemicals can be reliably applied to the upper surface of the substrate W to be applied. Thereby, the following effects are obtained. That is, when the length L1 in the X direction of the columnar chemical solution is longer than half of the short side length Wn of the rectangular substrate, the substrate out of the columnar chemical solution discharged from the porous nozzle 32 as the substrate W rotates. A state occurs in which a part of the chemical solution on the edge side of W is not supplied to the upper surface of the substrate W (for example, when the arrangement direction X of the columnar chemical solutions and the short side direction of the substrate W are parallel). When the substrate W is further rotated from this state, the corners (four corners) of the substrate W cut off the chemical solution on the edge side of the substrate W discharged from the porous nozzle 32 from the side, and the chemical solution rebounds. For this reason, as described above, the row of chemical liquids are reliably deposited on the upper surface of the substrate W, whereby the chemical liquid can be prevented from rebounding and the substrate W can be uniformly etched.

  As described above, according to this embodiment, since the chemical liquid is discharged in a line along the arrangement direction X from the porous nozzle 32 having the plurality of discharge holes 321a, the chemical liquid is applied to the upper surface of the substrate W over a relatively wide range. Can be applied simultaneously. Therefore, a predetermined amount of chemical solution can be supplied to each part of the upper surface of the substrate W while minimizing the time difference until the chemical solution is supplied to each part of the upper surface of the substrate W.

  In addition, according to this embodiment, the liquid landing positions of the chemical liquids constituting the columnar chemical liquid are determined from the rotation radius line RL along the offset direction Y perpendicular to the rotation radius line RL by a predetermined distance (offset distance) S. Just staggered. As a result, the trajectories of the chemical liquid (droplets) deposited on the upper surface of the substrate W are different from each other, and the uniform dispersion of the chemical liquid on the upper surface of the substrate W is promoted. Further, since the chemical solution is discharged along the rotation direction A of the substrate W, the chemical solution that has landed on the upper surface of the substrate W is spread along the discharge direction F toward the front side in the discharge direction F, and a small amount of the chemical solution is discharged. Thus, the chemical solution can be uniformly dispersed over a wider range.

  Further, according to this embodiment, the chemical solution is discharged from the center processing nozzle 33 toward the rotation center A0 of the substrate W. Therefore, the chemical liquid discharged from the porous nozzle 32 and deposited on the upper surface of the substrate W cannot be sufficiently supplied to the rotation center A0 of the substrate W, or the path of the chemical liquid deposited on the upper surface of the substrate W is Even when the rotational center A0 deviates, the central portion of the substrate W can be reliably etched by the chemical solution discharged by the center processing nozzle 33.

  As described above, according to this embodiment, while the central portion of the substrate W is reliably etched by the chemical liquid discharged from the central processing nozzle 33, the upper surface of the substrate W is aligned by the columnar chemical liquid discharged from the porous nozzle 32. The chemical solution can be quickly supplied to each of these parts, and the upper surface of the substrate W can be uniformly etched. Therefore, the entire upper surface of the substrate W can be uniformly etched with a small amount of chemical without increasing the amount of chemical supplied to the upper surface of the substrate W.

<Second Embodiment>
FIG. 6 is a diagram showing a second embodiment of the substrate processing apparatus according to the present invention. FIG. 7 is an enlarged view of a main part of the substrate processing apparatus of FIG. The second embodiment is greatly different from the first embodiment in that an etching process is performed on the upper surface of the substrate W with a chemical solution supplied only from the porous nozzle. The liquid landing position of the chemical liquid discharged from the porous nozzle and landing on the upper surface of the substrate W is changed. The other configurations are basically the same as those of the first embodiment, and the features of the second embodiment will be described in detail below in comparison with the first embodiment.

  The nozzle body 30 employed in the substrate processing apparatus according to the second embodiment is composed of only the porous nozzle 34 (corresponding to the “ejection means” of the present invention), and the configuration thereof is the porous nozzle used in the first embodiment. 32. That is, in the multi-hole nozzle 34, a plurality of discharge pipes 341 are arranged in a line along the arrangement direction (X direction) at equal intervals, and obliquely above the upper surface of the substrate W from the discharge holes 341a of each discharge pipe 341. It is comprised so that a chemical | medical solution may be discharged from. Further, the liquid chemicals are discharged from the multi-hole nozzle 34 so that the liquid landing positions of the liquid chemicals forming the row chemical liquids that are deposited on the upper surface of the substrate W are shifted by a predetermined distance (offset distance) in the offset direction (Y direction). It is discharged. The offset distance S2 is appropriately set in consideration of the rotational speed of the substrate W and the like from the viewpoint of supplying the chemical solution to the central portion of the substrate W together with the uniform dispersion of the chemical solution.

  On the other hand, in the first embodiment, four quadrants W1 to W4 defined by dividing the upper surface of the substrate W by a line CL extending in the Y direction through the rotation center A0 of the substrate W and a rotation radius line RL. Among them, the position where the row chemical solution is deposited is limited to the region in the quadrant W2, but in the second embodiment, a part of the column chemical solution is deposited in the region in the quadrant W3. That is, the chemical liquid is ejected from the porous nozzle 34 so that the liquid deposition position of the chemical liquid (droplets) constituting the row chemical liquid deposited on the upper surface of the substrate W satisfies the following first and second conditions. (FIG. 7).

  First condition: A predetermined distance (offset distance) S2 in a direction opposite to the rotation direction A of the substrate W in the Y direction from a line extending to one side (+ X direction) of the rotation radius line RL with respect to the rotation center A0 of the substrate W. It is only shifted. That is, the offset radius S2 is shifted in the + Y direction from the line extending in the + X direction with respect to the rotation center A0 of the substrate W in the rotation radius line RL.

  Second condition: the substrate Pe of the rotation radius line RL with respect to the line CL in which the end Pe on the rotation center side of the substrate W at the liquid chemical landing position extends in the Y direction through the rotation center A0 of the substrate W. It is located on the other side (−X direction) with respect to the rotation center A0 of W.

  As described above, by causing the row chemical solution to arrive, the chemical solution located at the end Pe on the rotation center side of the substrate W of the row chemical solution passes through the rotation center A0 of the substrate W due to the rotation of the substrate W. However, it flows toward the edge side of the substrate W. Specifically, in addition to the force acting in the discharge direction, the reaction force acting in the direction opposite to the rotation direction A of the substrate W and the rotation radius are applied to the chemical solution located at the end Pe on the rotation center side of the substrate W. Centrifugal force acting in the direction works, and the chemical solution is supplied to the central portion of the substrate W according to the resultant force, and is discharged out of the substrate while being dispersed.

  Here, the distance from the rotation center A0 of the substrate W to the end liquid landing position Pe on the rotation center side of the columnar chemical solution W is Re, and the rotation center A0 of the substrate W and the rotation center of the columnar chemical solution substrate W is defined as Re. When the angle formed by the line segment connecting the end liquid landing position Pe on the side and the line CL extending in the Y direction through the rotation center A0 of the substrate W is θ, the length corresponding to Re · sin θ is quadrant W2. From the quadrant W3 to the quadrant W3. Such shift amount (length corresponding to Re · sin θ) takes into account various conditions such as the offset distance S2, the rotation speed of the substrate W, the state of the upper surface of the substrate W, and the magnitude of the surface tension of the chemical used. Thus, the chemical liquid that has landed in the quadrant W3 is set to pass through the rotation center A0 of the substrate W.

Further, the length L2 in the arrangement direction (X direction) of the columnar chemicals that are deposited on the upper surface of the square substrate W is expressed by the following inequality:
L2 ≦ Re · sin θ + (Wn / 2)
Where Wn: the length of the short side of the square substrate,
The processing liquid is discharged from the porous nozzle 34 so as to satisfy the above. In this manner, by defining the length L2 of the row chemical solution, the row chemical solution can be reliably deposited on the upper surface of the substrate W to be rotated. Thereby, it can prevent that the corner | angular part (4 corners) of the board | substrate W to rotate cuts the chemical | medical solution at the edge side of the board | substrate W discharged from the porous nozzle 34. FIG. As a result, the chemical solution is prevented from rebounding, and the substrate W can be uniformly etched.

  As described above, according to this embodiment, similar to the first embodiment, chemical liquids (in-line chemical liquid) are arranged in a row along the arrangement direction X substantially parallel to the rotational radius direction of the substrate W from the porous nozzle 34. Since the ejection is performed, it is possible to supply the chemical solution while minimizing the time difference until the chemical solution is supplied to each part of the upper surface of the substrate W over a relatively wide range.

  Moreover, according to this embodiment, the same effect as 1st Embodiment can be acquired by satisfy | filling the said 1st condition. That is, the trajectories of the chemical liquid (droplets) deposited on the upper surface of the substrate W are different from each other, and the uniform dispersion of the chemical liquid on the upper surface of the substrate W is promoted. Furthermore, by discharging the chemical liquid along the rotation direction A of the substrate W, the chemical liquid that has landed on the upper surface of the substrate W is spread to the front side in the discharge direction along the discharge direction. A chemical solution can be uniformly dispersed over a wide range.

  In addition, according to this embodiment, by satisfying the second condition, the chemical liquid positioned at the end Pe on the rotation center side of the substrate W among the columnar chemical liquid deposited on the upper surface of the substrate W is transferred to the substrate W. It becomes possible to supply to the central portion, and the central portion of the substrate W can be etched.

  Therefore, by satisfying the first and second conditions, the chemical solution can be quickly supplied to each portion of the upper surface of the substrate W by the row chemical solution while the central portion of the substrate W is reliably processed. It is possible to etch the upper surface of the substrate uniformly. As a result, the substrate W can be processed uniformly with a small amount of chemical solution without increasing the amount of the chemical solution supplied to the upper surface of the substrate W. In addition, since the chemical solution is discharged from each discharge pipe 341 under the same conditions without providing a central processing nozzle, the uniformity of the etching process can be further improved.

<Others>
The present invention is not limited to the above-described embodiment, and various modifications other than those described above can be made without departing from the spirit of the present invention. For example, in the first embodiment, the nozzle body 30 is provided with the multi-hole nozzle 32 and the center processing nozzle 33, and the multi-hole nozzle 32 and the center processing nozzle 33 are integrally configured. However, the present invention is not limited to this. For example, as shown in FIG. 8, the central processing nozzle 35 may be provided separately from the porous nozzle 32, and the porous nozzle 32 and the central processing nozzle 35 may be arranged separately (third embodiment). With this configuration, the processing liquid is ejected from the porous nozzle 32 according to the processing content, regardless of the arrangement position of the central processing nozzle 35, while reliably processing the central portion of the substrate W. It is possible to freely change the processing parameters such as the landing position of the liquid processing liquid.

  In the above-described embodiment, the processing liquid (row processing liquid) is discharged obliquely from above the upper surface of the substrate W from the porous nozzles 32 and 34, but the discharge direction of the processing liquid is arbitrary. For example, the processing liquid may be discharged perpendicular to the upper surface of the substrate W. Even in such a configuration, as long as the liquid deposition position of the row processing liquid is shifted in the offset direction Y from the rotation radius line RL, the loci of the processing liquid (droplets) that have landed on the substrate W are different from each other. Uniform dispersion of the treatment liquid is promoted. Therefore, the entire upper surface of the substrate W can be processed uniformly with a small amount of processing liquid. In this case, since the rotation direction A of the substrate W and the ejection direction are orthogonal to each other, the upper surface of the substrate W is divided by a line CL extending in the Y direction through the rotation center A0 of the substrate W and the rotation radius line RL. The liquid deposition position of the row processing liquid is not limited to any one of the four defined quadrants W1 to W4.

  Further, in the above embodiment, a plurality of discharge pipes are arranged in a row along the X direction (arrangement direction) in the multi-hole nozzles 32 and 34, and discharged from each of the plurality of discharge pipes and deposited on the upper surface of the substrate W. Although the landing positions of the treatment liquids are arranged in a line, the arrangement shape of the treatment liquids is not limited to this. For example, the placement directions X of the processing liquids discharged from each of the plurality of discharge pipes and landing on the upper surface of the substrate W are different from each other in the Y direction (offset direction). The configuration of the multi-hole nozzle may be changed so that the nozzles are arranged along. In short, as long as the treatment liquid is ejected in a line along the arrangement direction X so that the landing positions of the treatment liquids discharged from each of the plurality of discharge pipes and landing on the upper surface of the substrate W do not interfere with each other. The configuration of the multi-hole nozzle is arbitrary.

  Moreover, in the said embodiment, although the row-form process liquid is supplied to the board | substrate W by discharging a process liquid from the some discharge pipe provided in the porous nozzles 32 and 34, it is not limited to this. For example, a plurality of discharge nozzles may be individually arranged in a row along the arrangement direction X, and the processing liquid may be discharged from each discharge nozzle to supply the row processing liquid to the substrate W.

  Moreover, in the said embodiment, although the several discharge pipe is extended in the perforated nozzles 32 and 34, a plurality of pipes extending in the arrangement direction X are provided along the arrangement direction X without providing a plurality of discharge pipes. The discharge holes may be formed. Further, not only the multi-hole nozzle, but also a slit nozzle opened so as to extend in the arrangement direction X may be used.

  Moreover, although the said embodiment demonstrated the case where the chemical | medical solution by dilute hydrofluoric acid etc. was supplied to the board | substrate W, and the etching process was performed with respect to the board | substrate W, the content of a board | substrate process is not limited to this. For example, an apparatus that uses a cleaning liquid such as pure water as a processing liquid, supplies the cleaning liquid to the rotating substrate W while applying ultrasonic vibration to the cleaning liquid, and performs a cleaning process on the substrate W is also provided. Can be applied.

  The present invention applies a processing solution to a substrate while rotating various substrates including a semiconductor wafer, a glass substrate for a liquid crystal display device, a PDP (plasma display panel) substrate, a glass substrate for a magnetic disk, a ceramic substrate, and the like. The present invention can be applied to a substrate processing apparatus that supplies and performs a predetermined process on a substrate.

BRIEF DESCRIPTION OF THE DRAWINGS It is a figure which shows 1st Embodiment of the substrate processing apparatus concerning this invention. FIG. 5 is a perspective view showing a configuration of a liquid discharge nozzle portion and a liquid landing position on a substrate upper surface of a processing liquid discharged from the liquid discharge nozzle portion. It is a top view which shows the structure of a liquid discharge nozzle part, and the liquid landing position in the board | substrate upper surface of the process liquid discharged from the liquid discharge nozzle part. It is a figure for demonstrating the discharge direction of the process liquid discharged from a porous nozzle. It is the schematic diagram which showed the direction of the force which acts on the chemical | medical solution discharged from the porous nozzle and landing on the board | substrate upper surface. It is a figure which shows 2nd Embodiment of the substrate processing apparatus concerning this invention. It is a principal part enlarged view of the substrate processing apparatus of FIG. It is a figure which shows 3rd Embodiment of the substrate processing apparatus concerning this invention.

Explanation of symbols

1 ... Substrate holder (substrate holder)
2 ... Rotation drive part (rotation drive means)
32 ... multi-hole nozzle (first discharge means)
33, 35 ... center processing nozzle (second discharge means)
34 ... Multi-hole nozzle (discharge means)
321a, 341a ... a plurality of discharge holes A ... rotation direction of the substrate (A0) ... rotation center of the substrate (CL) CL ... line extending in the offset direction L1, L2 ... length in the arrangement direction of the row processing liquids RL ... rotation radius line W: Substrate W1 to W4 ... (quadrant is defined by dividing the upper surface of the substrate by a line extending in the offset direction through the rotation center of the substrate and a rotation radius line) X: Arrangement direction + X: Of rotation radius lines One side with respect to the center of rotation of the substrate -X: The other side of the rotation radius line with respect to the center of rotation of the substrate Y: Offset direction

Claims (8)

In a substrate processing apparatus for performing a predetermined process on the substrate by supplying a processing liquid to the substrate while rotating the substrate in a substantially horizontal posture,
Substrate holding means for holding the substrate in a substantially horizontal posture;
Rotation driving means for rotating the substrate holding means to rotate the substrate around a predetermined rotation center;
First discharge means for discharging the processing liquid in a row along a predetermined arrangement direction substantially parallel to the rotation radius direction of the substrate toward the upper surface of the substrate rotated by the rotation driving means;
Second discharge means for discharging a processing liquid toward the rotation center of the upper surface of the substrate,
When the line extending in the rotation radius direction of the substrate through the rotation center of the substrate is defined as a rotation radius line, the processing liquid constituting the row processing liquid discharged from the first discharge means and landing on the upper surface of the substrate The substrate processing apparatus is characterized in that each liquid landing position is shifted from the rotational radius line by a predetermined distance in an offset direction orthogonal to the rotational radius line. The first discharge means includes a multi-hole nozzle provided with a plurality of discharge holes along the arrangement direction,
The substrate processing apparatus according to claim 1, wherein the multi-hole nozzle discharges a processing liquid from each of the plurality of discharge holes to supply the columnar processing liquid to the upper surface of the substrate.   The first discharge means has the liquid landing position in any one of four quadrants defined by dividing the upper surface of the substrate by a line extending in the offset direction through the rotation center of the substrate and the rotation radius line. The substrate processing apparatus according to claim 1, wherein the processing liquid is discharged so as to be limited.   The substrate processing apparatus according to claim 3, wherein the first discharge unit discharges the processing liquid in a line from obliquely above the upper surface of the substrate along the rotation direction of the substrate. The substrate processing apparatus according to claim 3 or 4, wherein the predetermined processing is performed on a rectangular rectangular substrate as the substrate.
The length in the arrangement direction of the columnar processing liquid discharged from the first discharge means and landing on the upper surface of the square substrate is not more than half the short side of the square substrate. . In a substrate processing apparatus for performing a predetermined process on the substrate by supplying a processing liquid to the substrate while rotating the substrate in a substantially horizontal posture,
Substrate holding means for holding the substrate in a substantially horizontal posture;
Rotation driving means for rotating the substrate holding means to rotate the substrate around a predetermined rotation center;
To the upper surface of the substrate rotated by the rotation driving means, in a row along a predetermined arrangement direction substantially parallel to the rotation radius direction of the substrate, and on the upper surface of the substrate along the rotation direction of the substrate And a discharge means for discharging the processing liquid obliquely from above,
The liquid deposition position of each of the processing liquids constituting the columnar processing liquid discharged from the discharge means and landing on the upper surface of the substrate rotates a line extending in the rotation radius direction of the substrate through the rotation center of the substrate. When a radius line is used, the substrate processing apparatus satisfies both of the following conditions on the upper surface of the substrate.
First condition: The rotation radius line deviates from a line extending to one side with respect to the rotation center of the substrate by a predetermined distance in an offset direction orthogonal to the rotation radius line in a direction opposite to the rotation direction of the substrate. .
Second condition: rotation end of the rotating center side of the substrate of the adhesive liquid position, with respect to a line extending in the offset direction through the rotational center of the substrate, the substrate in the extending direction of the rotational radius line It is located on the other side opposite to the one side with respect to the center. The discharge means includes a multi-hole nozzle provided with a plurality of discharge holes along the arrangement direction,
The substrate processing apparatus according to claim 6, wherein the multi-hole nozzle discharges a processing liquid from each of the plurality of discharge holes to supply the row-shaped processing liquid to the upper surface of the substrate. The substrate processing apparatus according to claim 6 or 7, wherein the predetermined processing is performed on a rectangular rectangular substrate as the substrate.
The length L in the arrangement direction of the columnar processing liquid discharged from the discharge means and landing on the upper surface of the square substrate satisfies the following condition.
L ≦ Re · sin θ + (Wn / 2)
However,
Re: distance from the center of rotation of the square substrate to the end landing liquid position of the row processing liquid on the rotation center side of the square substrate;
θ: a line segment connecting the rotation center of the square substrate and the end landing liquid position of the columnar processing liquid on the rotation center side of the square substrate, and the offset direction through the rotation center of the square substrate The angle formed by the line extending to
Wn: The length of the short side of the square substrate.

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