TW200724247A - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method

Info

Publication number
TW200724247A
TW200724247A TW095133071A TW95133071A TW200724247A TW 200724247 A TW200724247 A TW 200724247A TW 095133071 A TW095133071 A TW 095133071A TW 95133071 A TW95133071 A TW 95133071A TW 200724247 A TW200724247 A TW 200724247A
Authority
TW
Taiwan
Prior art keywords
substrate
nozzle
rotational radius
substrate processing
processing liquid
Prior art date
Application number
TW095133071A
Other languages
Chinese (zh)
Other versions
TWI313624B (en
Inventor
Kazuo Jyodai
Original Assignee
Dainippon Screen Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dainippon Screen Mfg filed Critical Dainippon Screen Mfg
Publication of TW200724247A publication Critical patent/TW200724247A/en
Application granted granted Critical
Publication of TWI313624B publication Critical patent/TWI313624B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like

Abstract

The provided are a substrate processing apparatus and a substrate processing method by which the entire upper surface of substrate can be uniformly treated with small quantity of processing liquid, wherein the processing liquid is ejected, obliquely and downwardly in the turning direction of substrate in row form along arranging direction of nozzles, from multijet nozzle 32 onto the upper surface of substrate W. In addition, the processing liquid is discharged from the multijet nozzle 32 in such a manner that the hit point of each liquid drop which constitutes the rowed liquid ejected onto the upper surface of substrate W offsets from the rotational radius line RL, when the line extending in the direction of rotational radius of substrate W is taken as a rotational radius line, by merely a predetermined distance S in the offset direction perpendicular to the rotational radius line RL. The processing liquid is supplied toward the center part of substrate W through a center nozzle 33 besides the nozzle 32.
TW095133071A 2005-12-27 2006-09-07 Substrate processing apparatus and substrate processing method TWI313624B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005374571A JP4476217B2 (en) 2005-12-27 2005-12-27 Substrate processing equipment

Publications (2)

Publication Number Publication Date
TW200724247A true TW200724247A (en) 2007-07-01
TWI313624B TWI313624B (en) 2009-08-21

Family

ID=38214313

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095133071A TWI313624B (en) 2005-12-27 2006-09-07 Substrate processing apparatus and substrate processing method

Country Status (4)

Country Link
JP (1) JP4476217B2 (en)
KR (1) KR100816982B1 (en)
CN (1) CN100483617C (en)
TW (1) TWI313624B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI561313B (en) * 2013-06-12 2016-12-11 Tokyo Electron Ltd Liquid processing device, liquid processing method, and storage medium

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5391014B2 (en) * 2009-09-28 2014-01-15 大日本スクリーン製造株式会社 Substrate processing apparatus and substrate processing method
JP5671261B2 (en) * 2010-06-04 2015-02-18 東京応化工業株式会社 Processing method of workpiece
JP5743853B2 (en) 2010-12-28 2015-07-01 東京エレクトロン株式会社 Liquid processing apparatus and liquid processing method
JP5646354B2 (en) 2011-01-25 2014-12-24 東京エレクトロン株式会社 Liquid processing apparatus and liquid processing method
JP2014123590A (en) * 2012-12-20 2014-07-03 Disco Abrasive Syst Ltd Cleaning apparatus
JP6182347B2 (en) * 2013-04-19 2017-08-16 株式会社荏原製作所 Substrate processing equipment
CN104128292A (en) * 2013-04-30 2014-11-05 细美事有限公司 Substrate processing apparatus and substrate processing method
US10332761B2 (en) 2015-02-18 2019-06-25 SCREEN Holdings Co., Ltd. Substrate processing apparatus
JP6478692B2 (en) * 2015-02-18 2019-03-06 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing equipment
CN107502893B (en) * 2017-08-07 2024-01-30 上海利正卫星应用技术有限公司 Corrosion machine self-rotating chuck device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6025012A (en) * 1995-09-20 2000-02-15 Matsushita Electric Industrial Co., Ltd. Method and apparatus for determining film thickness control conditions and discharging liquid to a rotating substrate
JPH11165114A (en) * 1997-12-05 1999-06-22 Dainippon Screen Mfg Co Ltd Single substrate processing device
JP2002064079A (en) * 2000-08-22 2002-02-28 Disco Abrasive Syst Ltd Etching apparatus
JP4372984B2 (en) * 2000-09-27 2009-11-25 東京エレクトロン株式会社 Coating apparatus and coating method
KR100488753B1 (en) * 2001-07-23 2005-05-11 다이닛뽕스크린 세이조오 가부시키가이샤 Substrate treating method and apparatus
JP3958539B2 (en) * 2001-08-02 2007-08-15 東京エレクトロン株式会社 Substrate processing apparatus and substrate processing method
JP2005116677A (en) * 2003-10-06 2005-04-28 Sigma Meltec Ltd Chemical feed nozzle, chemical treatment equipment for substrate and method for treating chemical

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI561313B (en) * 2013-06-12 2016-12-11 Tokyo Electron Ltd Liquid processing device, liquid processing method, and storage medium

Also Published As

Publication number Publication date
JP4476217B2 (en) 2010-06-09
CN100483617C (en) 2009-04-29
KR20070068997A (en) 2007-07-02
JP2007180144A (en) 2007-07-12
KR100816982B1 (en) 2008-03-27
CN1992153A (en) 2007-07-04
TWI313624B (en) 2009-08-21

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees