TW200641985A - Treatment apparatus for substrate and method thereof - Google Patents

Treatment apparatus for substrate and method thereof

Info

Publication number
TW200641985A
TW200641985A TW094145938A TW94145938A TW200641985A TW 200641985 A TW200641985 A TW 200641985A TW 094145938 A TW094145938 A TW 094145938A TW 94145938 A TW94145938 A TW 94145938A TW 200641985 A TW200641985 A TW 200641985A
Authority
TW
Taiwan
Prior art keywords
dry ice
substrate
surface treatment
substrate processing
physical films
Prior art date
Application number
TW094145938A
Other languages
Chinese (zh)
Other versions
TWI287260B (en
Inventor
Se-Ho Kim
Jong-Soo Park
Cheol-Nam Yoon
Original Assignee
K C Tech Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020040118311A external-priority patent/KR100740827B1/en
Priority claimed from KR1020050049585A external-priority patent/KR100622287B1/en
Priority claimed from KR1020050060565A external-priority patent/KR20070005304A/en
Application filed by K C Tech Co Ltd filed Critical K C Tech Co Ltd
Publication of TW200641985A publication Critical patent/TW200641985A/en
Application granted granted Critical
Publication of TWI287260B publication Critical patent/TWI287260B/en

Links

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning In General (AREA)
  • Weting (AREA)

Abstract

To provide a substrate processing unit that can quickly and easily remove physical films and a substrate processing method therefor. This substrate processing unit comprises a loading portion for loading a substrate formed with physical films, a dry ice supply portion for providing dry ice particles or carbonic anhydride, a spray portion for spraying the dry ice particles supplied from the dry ice supply portion via one or more nozzles or solidifying the carbonic anhydride and spraying it onto the substrate for primary surface treatment of the physical films and a surface treatment portion for selectively removing the physical films subjected to primary surface treatment.
TW94145938A 2004-12-31 2005-12-22 Treatment apparatus for substrate and method thereof TWI287260B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020040118311A KR100740827B1 (en) 2004-12-31 2004-12-31 Injecting nozzle and cleaning station using the same
KR1020050049585A KR100622287B1 (en) 2005-06-10 2005-06-10 Nozzle that wash minuteness parts
KR1020050060565A KR20070005304A (en) 2005-07-06 2005-07-06 Treatment apparatus for substrate and method thereof

Publications (2)

Publication Number Publication Date
TW200641985A true TW200641985A (en) 2006-12-01
TWI287260B TWI287260B (en) 2007-09-21

Family

ID=36797860

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94145938A TWI287260B (en) 2004-12-31 2005-12-22 Treatment apparatus for substrate and method thereof

Country Status (2)

Country Link
JP (1) JP2006191022A (en)
TW (1) TWI287260B (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9627259B2 (en) 2014-11-14 2017-04-18 Kabushiki Kaisha Toshiba Device manufacturing method and device
US9633903B2 (en) 2015-01-28 2017-04-25 Kabushiki Kaisha Toshiba Device manufacturing method of processing cut portions of semiconductor substrate using carbon dioxide particles
US9947571B2 (en) 2014-11-14 2018-04-17 Kabushiki Kaisha Toshiba Processing apparatus, nozzle, and dicing apparatus
CN109348630A (en) * 2018-10-26 2019-02-15 蚌埠国显科技有限公司 A kind of array substrate protective device
US10332759B2 (en) 2015-04-10 2019-06-25 Kabushiki Kaisha Toshiba Processing apparatus
CN109986318A (en) * 2017-12-29 2019-07-09 中国核动力研究设计院 A kind of super-pressure stream of supercritical carbon dioxide carries dry ice cutter device and method

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102233342A (en) * 2010-04-28 2011-11-09 中国科学院微电子研究所 Carbon dioxide multifunctional cleaning machine
JP2013059711A (en) * 2011-09-12 2013-04-04 Japan Display East Inc Cleaning method
JP6377030B2 (en) * 2015-09-01 2018-08-22 東京エレクトロン株式会社 Substrate processing equipment

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9627259B2 (en) 2014-11-14 2017-04-18 Kabushiki Kaisha Toshiba Device manufacturing method and device
US9947571B2 (en) 2014-11-14 2018-04-17 Kabushiki Kaisha Toshiba Processing apparatus, nozzle, and dicing apparatus
US9633903B2 (en) 2015-01-28 2017-04-25 Kabushiki Kaisha Toshiba Device manufacturing method of processing cut portions of semiconductor substrate using carbon dioxide particles
US10332759B2 (en) 2015-04-10 2019-06-25 Kabushiki Kaisha Toshiba Processing apparatus
CN109986318A (en) * 2017-12-29 2019-07-09 中国核动力研究设计院 A kind of super-pressure stream of supercritical carbon dioxide carries dry ice cutter device and method
CN109348630A (en) * 2018-10-26 2019-02-15 蚌埠国显科技有限公司 A kind of array substrate protective device

Also Published As

Publication number Publication date
TWI287260B (en) 2007-09-21
JP2006191022A (en) 2006-07-20

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