GB0418494D0 - Method and apparatus for removing material from a substrate surface - Google Patents

Method and apparatus for removing material from a substrate surface

Info

Publication number
GB0418494D0
GB0418494D0 GB0418494A GB0418494A GB0418494D0 GB 0418494 D0 GB0418494 D0 GB 0418494D0 GB 0418494 A GB0418494 A GB 0418494A GB 0418494 A GB0418494 A GB 0418494A GB 0418494 D0 GB0418494 D0 GB 0418494D0
Authority
GB
Grant status
Grant
Patent type
Prior art keywords
method
apparatus
removing
material
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB0418494A
Other versions
GB2417251A (en )
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nanofilm Technologies International Pte Ltd
Original Assignee
Nanofilm Technologies International Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Grant date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
    • H01L21/3105After-treatment
    • H01L21/311Etching the insulating layers by chemical or physical means
    • H01L21/31127Etching organic layers
    • H01L21/31133Etching organic layers by chemical means
    • H01L21/31138Etching organic layers by chemical means by dry-etching
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00Moulds or cores; Details thereof or accessories therefor
    • B29C33/70Maintenance
    • B29C33/72Cleaning
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018Glow discharge
    • H01J37/32027DC powered
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • H01L21/02068Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02Details
    • H01J2237/0203Protection arrangements
    • H01J2237/0206Extinguishing, preventing or controlling unwanted discharges
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335Cleaning
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009Pre-treatment of the connector or the bonding area
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009Pre-treatment of the connector or the bonding area
    • H01L2224/8501Cleaning, e.g. oxide removal step, desmearing
    • H01L2224/85013Plasma cleaning
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/26Cleaning or polishing of the conductive pattern
GB0418494A 2004-08-18 2004-08-18 Method and apparatus for removing material from a substrate surface Withdrawn GB0418494D0 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB0418494A GB0418494D0 (en) 2004-08-18 2004-08-18 Method and apparatus for removing material from a substrate surface

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GB0418494A GB0418494D0 (en) 2004-08-18 2004-08-18 Method and apparatus for removing material from a substrate surface
US11203895 US20060037700A1 (en) 2004-08-18 2005-08-15 Method and apparatus for removing material from a substrate surface
JP2005235884A JP2006093669A (en) 2004-08-18 2005-08-16 Method and device for removing material from substrate surface
CN 200510090505 CN100468613C (en) 2004-08-18 2005-08-17 Method and apparatus for removing material from a substrate surface

Publications (2)

Publication Number Publication Date
GB0418494D0 true GB0418494D0 (en) 2004-09-22
GB2417251A true GB2417251A (en) 2006-02-22

Family

ID=33042295

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0418494A Withdrawn GB0418494D0 (en) 2004-08-18 2004-08-18 Method and apparatus for removing material from a substrate surface

Country Status (4)

Country Link
US (1) US20060037700A1 (en)
JP (1) JP2006093669A (en)
CN (1) CN100468613C (en)
GB (1) GB0418494D0 (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4760609B2 (en) * 2006-08-17 2011-08-31 パナソニック株式会社 Component mounting method and apparatus of the substrate
JP2008078515A (en) * 2006-09-25 2008-04-03 Tokyo Electron Ltd Plasma treatment method
EP2122656B1 (en) * 2007-03-12 2016-03-09 Aixtron SE Novel plasma system for improved process capability
US7563725B2 (en) * 2007-04-05 2009-07-21 Solyndra, Inc. Method of depositing materials on a non-planar surface
US7855156B2 (en) * 2007-05-09 2010-12-21 Solyndra, Inc. Method of and apparatus for inline deposition of materials on a non-planar surface
US20090011573A1 (en) * 2007-07-02 2009-01-08 Solyndra, Inc. Carrier used for deposition of materials on a non-planar surface
WO2009051764A8 (en) * 2007-10-15 2009-11-19 Solyndra, Inc. Support system for solar energy generator panels
WO2009107196A1 (en) 2008-02-26 2009-09-03 株式会社島津製作所 Method for plasma deposition and plasma cvd system
EP2308060A4 (en) * 2008-06-11 2013-10-16 Intevac Inc Application specific implant system and method for use in solar cell fabrications
US8749053B2 (en) 2009-06-23 2014-06-10 Intevac, Inc. Plasma grid implant system for use in solar cell fabrications
JP5769451B2 (en) * 2011-03-07 2015-08-26 キヤノン株式会社 Method for manufacturing an imprint apparatus and an article
CN106847736A (en) 2011-11-08 2017-06-13 因特瓦克公司 Substrate processing system and method
US9198274B2 (en) * 2012-07-05 2015-11-24 Sputtering Components, Inc. Ion control for a plasma source
US9318332B2 (en) 2012-12-19 2016-04-19 Intevac, Inc. Grid for plasma ion implant
FR3004465B1 (en) * 2013-04-11 2015-05-08 Ion Beam Services Machine ion implantation presenting increased productivity
CN105448667A (en) * 2015-12-23 2016-03-30 苏州工业园区纳米产业技术研究院有限公司 Wafer surface smudge cleaning method

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4555612A (en) * 1983-10-17 1985-11-26 General Electric Co. Plasma jet cleaning apparatus and method
JPS63234532A (en) * 1987-03-24 1988-09-29 Toshiba Corp Plasma etching device
US4797178A (en) * 1987-05-13 1989-01-10 International Business Machines Corporation Plasma etch enhancement with large mass inert gas
US4853081A (en) * 1987-10-30 1989-08-01 Ibm Corporation Process for removing contaminant
JPH03218627A (en) * 1989-02-15 1991-09-26 Hitachi Ltd Method and device for plasma etching
US20020004309A1 (en) * 1990-07-31 2002-01-10 Kenneth S. Collins Processes used in an inductively coupled plasma reactor
JP3099525B2 (en) * 1992-07-01 2000-10-16 松下電器産業株式会社 Board of the plasma cleaning device
JP3278732B2 (en) * 1993-12-27 2002-04-30 株式会社アルバック Etching apparatus and etching method
JPH07326605A (en) * 1994-05-31 1995-12-12 Kokusai Electric Co Ltd Gas cleaning and its device
JP3799073B2 (en) * 1994-11-04 2006-07-19 株式会社日立製作所 Dry etching method
US6794301B2 (en) * 1995-10-13 2004-09-21 Mattson Technology, Inc. Pulsed plasma processing of semiconductor substrates
JPH09129596A (en) * 1995-10-26 1997-05-16 Toshiba Corp Cleaning method for reaction chamber
JP3812966B2 (en) * 1996-02-07 2006-08-23 沖電気工業株式会社 The plasma processing apparatus and plasma processing method
DE19911046B4 (en) * 1999-03-12 2006-10-26 Robert Bosch Gmbh plasma process
JP4329229B2 (en) * 1999-06-30 2009-09-09 住友電気工業株式会社 Iii-v nitride semiconductor growth method and vapor phase growth apparatus
JP2002324789A (en) * 2001-04-24 2002-11-08 Sekisui Chem Co Ltd Plasma treating unit
US6853142B2 (en) * 2002-11-04 2005-02-08 Zond, Inc. Methods and apparatus for generating high-density plasma
JP4013745B2 (en) * 2002-11-20 2007-11-28 松下電器産業株式会社 Plasma processing method
US7543546B2 (en) * 2003-05-27 2009-06-09 Matsushita Electric Works, Ltd. Plasma processing apparatus, method for producing reaction vessel for plasma generation, and plasma processing method
US7314537B2 (en) * 2003-09-30 2008-01-01 Tokyo Electron Limited Method and apparatus for detecting a plasma
US7041608B2 (en) * 2004-02-06 2006-05-09 Eastman Kodak Company Providing fluorocarbon layers on conductive electrodes in making electronic devices such as OLED devices

Also Published As

Publication number Publication date Type
JP2006093669A (en) 2006-04-06 application
GB2417251A (en) 2006-02-22 application
CN1750231A (en) 2006-03-22 application
CN100468613C (en) 2009-03-11 grant
US20060037700A1 (en) 2006-02-23 application

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)