GB0418494D0 - Method and apparatus for removing material from a substrate surface - Google Patents

Method and apparatus for removing material from a substrate surface

Info

Publication number
GB0418494D0
GB0418494D0 GBGB0418494.1A GB0418494A GB0418494D0 GB 0418494 D0 GB0418494 D0 GB 0418494D0 GB 0418494 A GB0418494 A GB 0418494A GB 0418494 D0 GB0418494 D0 GB 0418494D0
Authority
GB
United Kingdom
Prior art keywords
substrate surface
removing material
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GBGB0418494.1A
Other versions
GB2417251A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nanofilm Technologies International Ltd
Original Assignee
Nanofilm Technologies International Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanofilm Technologies International Ltd filed Critical Nanofilm Technologies International Ltd
Priority to GB0418494A priority Critical patent/GB2417251A/en
Publication of GB0418494D0 publication Critical patent/GB0418494D0/en
Priority to SG200504992A priority patent/SG120253A1/en
Priority to US11/203,895 priority patent/US20060037700A1/en
Priority to JP2005235884A priority patent/JP2006093669A/en
Priority to CNB2005100905052A priority patent/CN100468613C/en
Publication of GB2417251A publication Critical patent/GB2417251A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00—Moulds or cores; Details thereof or accessories therefor
    • B29C33/70—Maintenance
    • B29C33/72—Cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H01J37/32027—DC powered
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/0203—Protection arrangements
    • H01J2237/0206—Extinguishing, preventing or controlling unwanted discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8501—Cleaning, e.g. oxide removal step, desmearing
    • H01L2224/85013—Plasma cleaning
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/26—Cleaning or polishing of the conductive pattern

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Cleaning In General (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Wire Bonding (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
GB0418494A 2004-08-18 2004-08-18 Removing material from a substrate surface using plasma Withdrawn GB2417251A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
GB0418494A GB2417251A (en) 2004-08-18 2004-08-18 Removing material from a substrate surface using plasma
SG200504992A SG120253A1 (en) 2004-08-18 2005-08-05 Method and apparatus for removing material from a substrate surface
US11/203,895 US20060037700A1 (en) 2004-08-18 2005-08-15 Method and apparatus for removing material from a substrate surface
JP2005235884A JP2006093669A (en) 2004-08-18 2005-08-16 Method and device for removing material from substrate surface
CNB2005100905052A CN100468613C (en) 2004-08-18 2005-08-17 Method and apparatus for removing material from a substrate surface

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0418494A GB2417251A (en) 2004-08-18 2004-08-18 Removing material from a substrate surface using plasma

Publications (2)

Publication Number Publication Date
GB0418494D0 true GB0418494D0 (en) 2004-09-22
GB2417251A GB2417251A (en) 2006-02-22

Family

ID=33042295

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0418494A Withdrawn GB2417251A (en) 2004-08-18 2004-08-18 Removing material from a substrate surface using plasma

Country Status (5)

Country Link
US (1) US20060037700A1 (en)
JP (1) JP2006093669A (en)
CN (1) CN100468613C (en)
GB (1) GB2417251A (en)
SG (1) SG120253A1 (en)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4760609B2 (en) * 2006-08-17 2011-08-31 パナソニック株式会社 Component mounting method and apparatus on board
JP2008078515A (en) * 2006-09-25 2008-04-03 Tokyo Electron Ltd Plasma treatment method
US8308969B2 (en) * 2007-03-12 2012-11-13 Aixtron, SE Plasma system for improved process capability
US7563725B2 (en) * 2007-04-05 2009-07-21 Solyndra, Inc. Method of depositing materials on a non-planar surface
US7855156B2 (en) * 2007-05-09 2010-12-21 Solyndra, Inc. Method of and apparatus for inline deposition of materials on a non-planar surface
US20090011573A1 (en) * 2007-07-02 2009-01-08 Solyndra, Inc. Carrier used for deposition of materials on a non-planar surface
WO2009051764A1 (en) * 2007-10-15 2009-04-23 Solyndra, Inc. Support system for solar energy generator panels
US8272348B2 (en) * 2008-02-26 2012-09-25 Shimadzu Corporation Method for plasma deposition and plasma CVD system
CN102099923B (en) * 2008-06-11 2016-04-27 因特瓦克公司 The solar cell injected is used to make
US8749053B2 (en) * 2009-06-23 2014-06-10 Intevac, Inc. Plasma grid implant system for use in solar cell fabrications
JP5769451B2 (en) * 2011-03-07 2015-08-26 キヤノン株式会社 Imprint apparatus and article manufacturing method
US9324598B2 (en) 2011-11-08 2016-04-26 Intevac, Inc. Substrate processing system and method
US9198274B2 (en) * 2012-07-05 2015-11-24 Sputtering Components, Inc. Ion control for a plasma source
TWI570745B (en) 2012-12-19 2017-02-11 因特瓦克公司 Grid for plasma ion implant
FR3004465B1 (en) * 2013-04-11 2015-05-08 Ion Beam Services ION IMPLANTATION MACHINE HAVING INCREASED PRODUCTIVITY
CN105448667A (en) * 2015-12-23 2016-03-30 苏州工业园区纳米产业技术研究院有限公司 Wafer surface smudge cleaning method
NL2017198B1 (en) * 2016-07-20 2018-01-26 Jiaco Instr Holding B V Decapsulation of electronic devices
EP3815889B1 (en) * 2019-10-31 2024-02-28 Alcon Inc. Method for removing lens forming material deposited on a lens forming surface
US20230103714A1 (en) * 2019-12-17 2023-04-06 Hitachi High-Tech Corporation Plasma processing apparatus and operating method of plasma processing apparatus
US11984306B2 (en) 2021-06-09 2024-05-14 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
CN117943365A (en) * 2024-03-21 2024-04-30 通威微电子有限公司 Brush sheet packaging integrated machine

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4555612A (en) * 1983-10-17 1985-11-26 General Electric Co. Plasma jet cleaning apparatus and method
DD264344A3 (en) * 1986-04-21 1989-02-01 Veb Zft Mikroelektronic Method and circuit arrangement for producing or etching layers on semiconductor substrates under the action of plasma
JPS63234532A (en) * 1987-03-24 1988-09-29 Toshiba Corp Plasma etching device
US4797178A (en) * 1987-05-13 1989-01-10 International Business Machines Corporation Plasma etch enhancement with large mass inert gas
US4853081A (en) * 1987-10-30 1989-08-01 Ibm Corporation Process for removing contaminant
KR900013595A (en) * 1989-02-15 1990-09-06 미다 가쓰시게 Plasma Etching Method and Apparatus
US20020004309A1 (en) * 1990-07-31 2002-01-10 Kenneth S. Collins Processes used in an inductively coupled plasma reactor
JP3099525B2 (en) * 1992-07-01 2000-10-16 松下電器産業株式会社 Plasma cleaning equipment for substrates
JP3278732B2 (en) * 1993-12-27 2002-04-30 株式会社アルバック Etching apparatus and etching method
JPH07326605A (en) * 1994-05-31 1995-12-12 Kokusai Electric Co Ltd Gas cleaning and its device
JP3799073B2 (en) * 1994-11-04 2006-07-19 株式会社日立製作所 Dry etching method
US6794301B2 (en) * 1995-10-13 2004-09-21 Mattson Technology, Inc. Pulsed plasma processing of semiconductor substrates
JPH09129596A (en) * 1995-10-26 1997-05-16 Toshiba Corp Cleaning method for reaction chamber
JP3812966B2 (en) * 1996-02-07 2006-08-23 沖電気工業株式会社 Plasma processing apparatus and plasma processing method
DE19911046B4 (en) * 1999-03-12 2006-10-26 Robert Bosch Gmbh plasma process
JP4329229B2 (en) * 1999-06-30 2009-09-09 住友電気工業株式会社 III-V nitride semiconductor growth method and vapor phase growth apparatus
JP2002324789A (en) * 2001-04-24 2002-11-08 Sekisui Chem Co Ltd Plasma treating unit
US6853142B2 (en) * 2002-11-04 2005-02-08 Zond, Inc. Methods and apparatus for generating high-density plasma
JP4013745B2 (en) * 2002-11-20 2007-11-28 松下電器産業株式会社 Plasma processing method
US7543546B2 (en) * 2003-05-27 2009-06-09 Matsushita Electric Works, Ltd. Plasma processing apparatus, method for producing reaction vessel for plasma generation, and plasma processing method
US7314537B2 (en) * 2003-09-30 2008-01-01 Tokyo Electron Limited Method and apparatus for detecting a plasma
US7041608B2 (en) * 2004-02-06 2006-05-09 Eastman Kodak Company Providing fluorocarbon layers on conductive electrodes in making electronic devices such as OLED devices

Also Published As

Publication number Publication date
GB2417251A (en) 2006-02-22
US20060037700A1 (en) 2006-02-23
CN100468613C (en) 2009-03-11
JP2006093669A (en) 2006-04-06
SG120253A1 (en) 2006-03-28
CN1750231A (en) 2006-03-22

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)