SG120253A1 - Method and apparatus for removing material from a substrate surface - Google Patents

Method and apparatus for removing material from a substrate surface

Info

Publication number
SG120253A1
SG120253A1 SG200504992A SG200504992A SG120253A1 SG 120253 A1 SG120253 A1 SG 120253A1 SG 200504992 A SG200504992 A SG 200504992A SG 200504992 A SG200504992 A SG 200504992A SG 120253 A1 SG120253 A1 SG 120253A1
Authority
SG
Singapore
Prior art keywords
substrate surface
removing material
substrate
Prior art date
Application number
SG200504992A
Inventor
Shi Xu
Kang Cheah Li
Original Assignee
Nanofilm Technologies Int
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanofilm Technologies Int filed Critical Nanofilm Technologies Int
Publication of SG120253A1 publication Critical patent/SG120253A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00—Moulds or cores; Details thereof or accessories therefor
    • B29C33/70—Maintenance
    • B29C33/72—Cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H01J37/32027—DC powered
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/0203—Protection arrangements
    • H01J2237/0206—Extinguishing, preventing or controlling unwanted discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8501—Cleaning, e.g. oxide removal step, desmearing
    • H01L2224/85013—Plasma cleaning
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/26—Cleaning or polishing of the conductive pattern

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Cleaning In General (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Wire Bonding (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
SG200504992A 2004-08-18 2005-08-05 Method and apparatus for removing material from a substrate surface SG120253A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0418494A GB2417251A (en) 2004-08-18 2004-08-18 Removing material from a substrate surface using plasma

Publications (1)

Publication Number Publication Date
SG120253A1 true SG120253A1 (en) 2006-03-28

Family

ID=33042295

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200504992A SG120253A1 (en) 2004-08-18 2005-08-05 Method and apparatus for removing material from a substrate surface

Country Status (5)

Country Link
US (1) US20060037700A1 (en)
JP (1) JP2006093669A (en)
CN (1) CN100468613C (en)
GB (1) GB2417251A (en)
SG (1) SG120253A1 (en)

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JP2008078515A (en) * 2006-09-25 2008-04-03 Tokyo Electron Ltd Plasma treatment method
KR101451771B1 (en) * 2007-03-12 2014-10-16 아익스트론 에스이 Novel plasma system for improved process capability
US7563725B2 (en) * 2007-04-05 2009-07-21 Solyndra, Inc. Method of depositing materials on a non-planar surface
US7855156B2 (en) * 2007-05-09 2010-12-21 Solyndra, Inc. Method of and apparatus for inline deposition of materials on a non-planar surface
US20090011573A1 (en) * 2007-07-02 2009-01-08 Solyndra, Inc. Carrier used for deposition of materials on a non-planar surface
WO2009051764A1 (en) * 2007-10-15 2009-04-23 Solyndra, Inc. Support system for solar energy generator panels
CN101874293B (en) * 2008-02-26 2011-11-30 株式会社岛津制作所 Method for plasma deposition and plasma CVD system
EP2319087A1 (en) * 2008-06-11 2011-05-11 Solar Implant Technologies Inc. Solar cell fabrication with faceting and ion implantation
US8749053B2 (en) 2009-06-23 2014-06-10 Intevac, Inc. Plasma grid implant system for use in solar cell fabrications
JP5769451B2 (en) * 2011-03-07 2015-08-26 キヤノン株式会社 Imprint apparatus and article manufacturing method
MY175007A (en) 2011-11-08 2020-06-02 Intevac Inc Substrate processing system and method
US9198274B2 (en) * 2012-07-05 2015-11-24 Sputtering Components, Inc. Ion control for a plasma source
MY178951A (en) 2012-12-19 2020-10-23 Intevac Inc Grid for plasma ion implant
FR3004465B1 (en) * 2013-04-11 2015-05-08 Ion Beam Services ION IMPLANTATION MACHINE HAVING INCREASED PRODUCTIVITY
CN105448667A (en) * 2015-12-23 2016-03-30 苏州工业园区纳米产业技术研究院有限公司 Wafer surface smudge cleaning method
NL2017198B1 (en) * 2016-07-20 2018-01-26 Jiaco Instr Holding B V Decapsulation of electronic devices
US11759980B2 (en) * 2019-10-31 2023-09-19 Alcon Inc. Method for removing lens forming material deposited on a lens forming surface
US20230103714A1 (en) * 2019-12-17 2023-04-06 Hitachi High-Tech Corporation Plasma processing apparatus and operating method of plasma processing apparatus
US20220399185A1 (en) * 2021-06-09 2022-12-15 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
CN117943365B (en) * 2024-03-21 2024-07-19 通威微电子有限公司 Brush sheet packaging integrated machine

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US4555612A (en) * 1983-10-17 1985-11-26 General Electric Co. Plasma jet cleaning apparatus and method
DD264344A3 (en) * 1986-04-21 1989-02-01 Veb Zft Mikroelektronic Method and circuit arrangement for producing or etching layers on semiconductor substrates under the action of plasma
JPS63234532A (en) * 1987-03-24 1988-09-29 Toshiba Corp Plasma etching device
US4797178A (en) * 1987-05-13 1989-01-10 International Business Machines Corporation Plasma etch enhancement with large mass inert gas
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US20020004309A1 (en) * 1990-07-31 2002-01-10 Kenneth S. Collins Processes used in an inductively coupled plasma reactor
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Also Published As

Publication number Publication date
GB0418494D0 (en) 2004-09-22
CN1750231A (en) 2006-03-22
GB2417251A (en) 2006-02-22
JP2006093669A (en) 2006-04-06
CN100468613C (en) 2009-03-11
US20060037700A1 (en) 2006-02-23

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