CN100468613C - Method and apparatus for removing material from a substrate surface - Google Patents
Method and apparatus for removing material from a substrate surface Download PDFInfo
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- CN100468613C CN100468613C CNB2005100905052A CN200510090505A CN100468613C CN 100468613 C CN100468613 C CN 100468613C CN B2005100905052 A CNB2005100905052 A CN B2005100905052A CN 200510090505 A CN200510090505 A CN 200510090505A CN 100468613 C CN100468613 C CN 100468613C
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/70—Maintenance
- B29C33/72—Cleaning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32018—Glow discharge
- H01J37/32027—DC powered
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/0203—Protection arrangements
- H01J2237/0206—Extinguishing, preventing or controlling unwanted discharges
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/335—Cleaning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/8501—Cleaning, e.g. oxide removal step, desmearing
- H01L2224/85013—Plasma cleaning
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/26—Cleaning or polishing of the conductive pattern
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Mechanical Engineering (AREA)
- Cleaning In General (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Wire Bonding (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Methods and apparatus for removing material from a substrate, such as an IC component, are disclosed. The methods include creating a plasma in an evacuatable chamber, by providing a power source to an electrode in the chamber, and contacting the substrate surface with at least one of ions, atoms and free radicals of the plasma. The power source, preferably DC, is supplied to the electrode as a variable, and preferably a pulsed voltage to prevent arcing.
Description
Technical field
The present invention relates to a kind ofly remove the method and apparatus of material from matrix surface, its be particularly related to a kind of be used for cleaning or the etching electronical elements surface and with the method and apparatus of making relevant electronical elements surface.Yet those skilled in the art know that the present invention is not limited to these purposes.
Background technology
Electronic circuit is because manufacturing issue and out of use phenomenon is very general.Although it is many that the root of problem has, topmost problem can belong to usually the surface residual organic pollution (as dust, fingerprint etc.) or each manufacturing procedure residual material such as the epoxy of solvent residue and outflow.
The course of processing of integrated circuit (IC) need be carried out the mold pressing and the joint of multilayer to components and parts.Joint generally includes leaded joint, and this moment, two adjacent IC elements will couple together by the lead-in wire fusion that adjacent elements is installed between the pad.If it is unclean that pad is installed, engaging process just may go wrong, thereby makes the imperfect or bad IC of causing of joint have defective.
A kind of solution that is used for improving wire-bonded that is before proposed is that cleaning is installed pad before engaging.The present known two kinds of clean methods that have: adopt the capacitive character cleaning of radio frequency (RF) for the energy; And at Ar/O
2Environment adopts the ion cleaning of 1500eV ion beam down.The RF cleaning can realize by the electrode that RF is added in the vacuum cavity, wherein includes the element of a needs cleaning in this cavity.An Ar source is introduced in the cavity, and form plasma.The ion of this plasma and the material of element surface carry out chemical reaction.There are several problems in the RF cleaning.The first, it can only be controlled the input power of RF cleaning systems.The second, in the course of work of high-power RF equipment, there are safety and environmental protection requirement, it will guarantee that the leakage of RF can not have influence on neighbouring crowd and equipment.The 3rd, the RF generator needs complicated matching network could be applied to cleaning more flexibly.Different application scenarios or different operating pressures need different matching networks.In addition, RF cleaning and ion cleaning all can be because of discharging or formed electric arc damages the element that is cleaned.
When parts used in the IC manufacturing are clean inadequately, also can cause other problem.For example, mould used in mold process may have residual epoxy film, and these all will clean up from mould at last.The existing method that is used for cleaning mould comprises uses wire brush or chemical bathing.Yet wire brush can damage mould and shorten its useful life, and the speed of chemical bathing is relatively slow again.The method that is used for prolonging life of the die that is now proposed is to be coated with the CrN of last layer 3-10 μ m or the ability that " hard chrome alloy " damages with the anti-wire brush of raising mould in mold surface.Although prolonged useful life of mould by improving resistance to wear, also there is shortcoming in this coating, and it has reduced the precision of mould size.
Summary of the invention
An object of the present invention is to improve or overcome at least one problem that exists in the above-mentioned prior art, or a kind of suitable corrective measure is provided.
First aspect of the present invention provides a kind of method that material is removed from a matrix surface, and it may further comprise the steps:
Form a plasma with a power supply; And
In ion, atom or the free radical of matrix surface and plasma one or more are contacted,
The power supply that wherein provides is a variable voltage.
Second aspect of the present invention provides a kind of method that material is removed from a matrix surface, and it may further comprise the steps:
With matrix be arranged in a vacuum-pumping, wherein have in the cavity of an electrode;
Thereby provide variable voltage in cavity, between electrode and matrix, to form plasma to electrode; And
Thereby in ion, atom or the free radical of matrix surface and plasma one or more are contacted remove lip-deep a part of material at least.
Because power supply wherein provides variable voltage, therefore can prevent the generation of electric arc, thereby can not damage matrix.
As preferably, this variable voltage is a pulse voltage, more preferably, this voltage be continuous 3-30kHz recurrent pulse once.When voltage was pulse voltage, the formation of plasma did not just have electric arc, thereby can not form unnecessary heating to the environment of removing material.
As preferably, the pulse of variable voltage be 0V arrive-300V and-a voltage between the 1000V, more preferably, from 0V to-380V and-a voltage the 600V.In addition, this voltage preferably continues 3 to 20 μ s.As preferably, this pulse be every 3-30kHz cycle once.As selection, this pulse can be weekly to have the phase more than one, and for example every 3-30kHz has a pair of be separated by 5 μ s and the pulse of long 3 μ s.
As preferably including two electrode of opposite, wherein power supply is given one of them electrode power supply, and another is what float, and matrix is arranged on the electrode of floating.As selection, another electrode grounding, or ground connection is floated or have identical electromotive force with the electrode that connects electricity, and matrix is on the electrode that connects electricity.
As preferably, this plasma is at O
2Environment form down, more preferably this plasma is at O
2/ CF
4Environment form down.
As preferably, this plasma forms in the cavity that is evacuated down to about 80-1500mTorr (millitorr).
As selection, two matrixes can be arranged on two electrodes.In another version, a plurality of electrodes arranged apart are arranged, wherein at least some electrodes support each matrix in described a plurality of matrix respectively.In another embodiment, have an electrode at least, two sides that it is opposite or one side wherein support described at least two electrodes.
As preferably, this matrix is IC, IC element, IC mould, tube core, wafer, sphere grid array, IC encapsulation, lead frame, microtubule, plate rail, reads in arm or the hard disk.In addition, as preferably, this material is in organic material, organic dirt, dissolvent residual or the epoxy resin.
A third aspect of the present invention provides a kind of device that material is removed from a matrix surface, and it comprises:
One vacuum cavity;
Be arranged in the electrode in the vacuum cavity; And
Power supply, thus it is used for providing variable voltage to form plasma in cavity to electrode, and one or more ions, atom or the free radical of plasma contact with matrix surface,
Power supply wherein provides variable voltage.
As preferably, this variable voltage is a pulse voltage.
As preferably including two electrode of opposite, wherein power supply is given one of them electrode power supply, and another is for floating, and wherein matrix is arranged on the electrode of floating.As selection, another electrode grounding, or ground connection is floated or have identical electromotive force with the electrode that connects electricity, and matrix is arranged on the electrode that connects electricity.
As preferably, this cavity comprises an opening, a face seal adjacency of this opening and conveyer, and wherein matrix is arranged on the conveyer.
For the sake of clarity, the term in this specification " cleaning " and " etching " are identical with " removal material " and " removal of material " implication in the specification.
Description of drawings
With reference now to accompanying drawing, describe the preferred embodiments of the present invention, these preferred embodiments only are exemplary.Wherein:
The schematic diagram that Fig. 1 simplifies for apparatus of the present invention;
Fig. 2 is a routine curve chart of the used pulse voltage of the present invention;
Fig. 3 and 4 is the rough schematic view of apparatus of the present invention alternate embodiment;
Fig. 5 a and 5b are the rough schematic view of another alternate embodiment of apparatus of the present invention, and cavity wherein is in stowed position and use location respectively.
Embodiment
Referring to Fig. 1, a preferred embodiment of the present invention is a kind of method and apparatus of removing material from matrix surface.As a kind of incomplete giving an example, matrix wherein comprises the element of electric component such as IC, IC encapsulation, sphere grid array or IC or IC encapsulation.These elements can comprise wafer, chip, tube core or moulded parts.The matrix that another kind of surface needs the present invention to clean comprise top described in the prior art, be used in the die surface of IC encapsulation in making, or in the processing coating procedure, be used for fixing the medium fixed mount etc. of hard disk.
In a preferred embodiment, this device comprises vacuum cavity 10 and is arranged in the electrode 12a that wherein links to each other with a DC power supply 14.The second electrode 12b is for floating.Inlet 16 on the vacuum cavity 10 is used for gas is introduced in the cavity.Outlet 18 on the vacuum cavity 10 links to each other with a vacuum pump of outside.The controller (not shown) in addition that links to each other with power supply, its output that is used for controlling power supply is to provide a variable voltage, and this variable voltage adopts the form of pulse negative pressure shown in Figure 2, and this point will describe in detail below.As an alternative, any type of power supply all can be used to provide variable voltage.For example, a part that all can be used as controller or controller through the AC power supplies or the monostable multifrequency oscillating circuit of rectification.
In use, matrix 22 is arranged on the second electrode 12b in the vacuum cavity 10, and the surface 24 that be cleaned is towards electrode 12a.Shown in relevant drawings, need can comprise general organic substance, surperficial organic pollution from the materials 26 that remove on surface 24, have the material of C-H and C-C key, residual solvent or epoxy resin.
In the present embodiment, the distance of electrode 12a and 12b is approximately 5mm, but in other embodiments, it can be between 3-100mm, and this depends on the matrix that is cleaned and the mode of cleaning.
By exporting 18 cavity 10 is evacuated down to the pressure of about 10-50mTorr, thereby makes gas 16 be incorporated into and make pressure approximately be raised to 150mTorr in the vacuum cavity 10 through entering the mouth then, as selection, this pressure also can be raised to 80 to 1500mTorr.The gas of introducing is O normally
2: CF
4Be the mist of 4:1, wherein CF
4As the formation of catalyst with accelerate plasma.As selection, this ratio can be different, CF wherein
4Can not have yet.In another embodiment, this gas is Ar.
In the present embodiment, this gas flows through vacuum cavity 10 continuously with the 200sccm flow rate in process of cleaning, and as selection, this flow rate can change from 50 to 1000sccm.Keep in will making vacuum cavity 10 the stable gas and plasma, gas flow also is used for purging or washing away any material 26 of removing from matrix surface 24 in the cleaning course.
Then, controller starts power supply 14 provides pulse voltage to electrode 12a.Shown in Figure 2 is the used routine pulse voltage waveform of present embodiment, wherein-and 800V pulse lasting 5 μ s in the cycle of 10kHz.This pulse voltage forms capacitor discharge between electrode 12a and 12b, form plasma simultaneously.The atom of plasma with free plain contact with matrix surface and with its on material 26 chemical reactions.This chemical reaction can destroy material 26.For example, in Plasma Formation by the O in the cavity
2Formed plasma atom and the free plain for example C-C and the c h bond that can contact and destroy in the deleterious material 26.In addition, in the plasma Hong can further deleterious material 26 be removed from matrix surface 24 to the ion of matrix surface 24.
Have a bit extremely important, upward matrix 22 can't be used the surface 24 of matrix 22 because arc discharge might damage the second electrode 12b, therefore will reduce the arc discharge between electrode 12a and electrode 12b and the matrix 22 thereby Here it is.On the other hand, if voltage is too low or can not produce plasma, or be not have enough energy that material 26 is removed from matrix surface.Therefore utilize the advantage of pulse voltage just to be can form to have the electro-ionic plasma of enough energy bands and finish cleaning, the while greatly reduces the possibility of discharge again.In addition, owing to greatly reduce the danger of discharge, therefore can arrangement of electrodes ground is nearer, thus make cleaning more abundant, and the space utilization of cavity 10 is also more effective.Also have, can only regulate power with RF cleaning in the prior art and control differently, among the present invention, thereby voltage, frequency and pulsewidth all can be controlled independently and can make cleaning course reach optimum.
In the above-described embodiments, the second electrode 12b is for floating.Thereby electrode is floated and can be reduced the danger of discharge damage matrix surface 24 between electrode 12a and the 12b.Yet the cleaning effect of plasma also decreases.For this reason, present embodiment is suitable for cleaning more responsive as mentioned above element surface.In another embodiment, matrix still is arranged on second electrode, just second electrode grounding here.Second electrode grounding, the danger of discharge can increase, but can regulate so that more effectively clean more up hill and dale this moment to the amplitude and the pulse parameter of voltage.Therefore, present embodiment is more suitable for the low element of element sensitiveness that cleaned among the embodiment than preceding detailed description.Other, among the embodiment that can clean more up hill and dale than the foregoing description, matrix is arranged on the electrode 12a, the second electrode 12b or float, or ground connection.Yet in another embodiment, matrix is arranged on the electrode 12a, and the electromotive force of the second electrode 12b equals the electromotive force of first electrode substantially.This embodiment can be optimized at for example IC mould, medium fixed mount or relevant instrument.In the present embodiment, the gap between element and the comparative electrode can be little of 3-8mm, and this is more even apart from the distribution that can make plasma.For example; can in 10 minutes, the epoxy mold compound of 20 μ m-100 μ m be removed from die surface in the present embodiment; or in 10 seconds, the diamond-type carbon (DLC) of 3nm is removed from the medium fixed mount, wherein the former adopts chemical method then to need 1 hour ability to remove in the prior art.
Fig. 3 and Figure 4 shows that another embodiment of the present invention, wherein identical Reference numeral is represented identical parts, has used a plurality of matrixes and/or electrode among this embodiment.In Fig. 3, two matrix 22a are arranged on the grounding electrode 12b different in the cavity 10 with 22b.They just face electrode 12a between the two in the position, wherein electrode 12a loads negative pulse voltage with respect to aforesaid embodiment.Embodiment shown in Figure 4 comprises that two such negative voltage electrode 12a and three are furnished with the floating electrode 12b of matrix 22a-d on it.Embodiment illustrated in fig. 1 identical in the cleaning mode of these embodiment and front.
The IC encapsulation is produced and is divided into multistep, and available batch or the manufacturing of production line form.Wherein one or more tube cores are connected on enclosed chip such as wafer, printed circuit board (PCB) (PCB), lead frame or the flexible PCB.Thereby then the line thigh between the installation of the correspondence on tube core and the enclosed chip pad is coupled together the tube core line is received on the enclosed chip.Thereby then on tube core, lead contact and enclosed chip, seal up one deck epoxy material again and form the IC encapsulation.Also can in encapsulation, connect the second layer, and with second wire-bonded pad is installed and be come bonding wire.
The preferred embodiments of the present invention can be used to cleaning:
● on connecting, clean enclosed chip before the tube core;
● (for example press to be 100-200mTorr in cavity, introduce gas only is O to cleaning installation pad before bonding wire
2, and matrix is when being arranged on the floating electrode);
● after wire-bonded, (for example press to be 100mTorr in cavity, introducing gas only is O thereby improve the cementability of mold at cleaning enclosed chip before the plastic packaging
2, and matrix is when being arranged on the floating electrode);
● thereby the enclosed chip of cleaning plastic packaging is removed the epoxy material that plastic packaging blows out when covering the second wire-bonded pad (for example pressing in cavity is 700-800mTorr, the O of introducing before the second layer on connecting
2: CF
4Be 9:1, and matrix is when being arranged on the floating electrode);
● particularly using after 600-1000 time after plastic packaging, cleaning envelope mould self (is for example pressed in cavity and is about 200mTorr, the O of introducing
2: CF
4Be 9:1, matrix is arranged on the electrode in opposed two electrodes, and these two electrodes are when all loading underbalance pulse).
Fig. 5 a and 5b are depicted as an alternative embodiment of the invention, and wherein identical Reference numeral is represented identical parts.Present embodiment structurally is applicable to the cleaning of online matrix surface in the IC package fabrication process, and manufacture process wherein as hereinbefore.In the present embodiment, cavity 10a has an open side 28, when cavity 10a contacts with conveyer 30, and this open side sealing.Thereby the forward position of cavity 10a can be helped to form sealing fully with conveyer by sealing of a seal such as silicon or rubber seal linear sealing.In the present embodiment, vacuum pump, source of the gas and power supply (not shown) are usually placed in the outer surface of cavity 10a roof 34.
Conveyer 30 is carrying the matrix 22 that needs cleaning.Shown in Fig. 5 b, in case matrix reaches on the position of cleaning, just descend by manual, hydraulic pressure or the pneumatic vacuum cavity 10 that makes, form a vacuum cavity that can be evacuated thereby cover matrix 22 with conveyer 30.Clean as mentioned above afterwards, owing to do not use second electrode, so matrix 22 electric the floating on conveyer 30 here.
This device can be used to clean after arbitrary step that above-mentioned IC encapsulation is made or each step.Also this device can be inserted in the new manufacturing equipment or, because it is very small and exquisite, therefore can after transformation, be used for existing equipment.The size of cavity 10a for example can be: 80mm (deeply) X250mm (wide) X20mm (height).The cavity 10a of same design can be used to the mould of online cleaning IC encapsulation.At this moment, die cavity should be relatively down, and the opening surface of cavity 10a should form vacuum cavity and encase the surface that will be cleaned thereby structurally can go up with mould relatively up.
Fig. 5 a and 5b illustrated embodiment have been showed the matrix of two needs cleanings.Therefrom as can be seen, as selection, cavity 10a can be used to hold and cleans more than two simultaneously or following matrix.
In another embodiment, power supply can be linked to each other with matrix, and with an arrangement of electrodes in cavity on the position relative with matrix surface, this electrode or ground connection, or float.
Those skilled in the art are all clear, and the present invention has many advantages than prior art, for example:
● reduced the danger that electric arc forms;
● working temperature remains to minimum, can reduce the pyrolytic damage to element thus;
● this system is more simpler than the RF cleaning systems of prior art, owing to do not need matching network, does not therefore exist to healthy, safety and to the worry of environmental impact;
● compare with the RF system, parameter control is more and more easy;
● when being used for cleaning mold, owing to few to the damage of mould, therefore can increase the useful life of mould, because die surface can adopt the more hard nickel protection layer of book, therefore molded element quality is higher;
● compared with prior art, the time of cleaning is shorter;
● compare with existing cleaning systems, operating cost is lower; And
● because operating cost is low and operation is simple, the present invention can be used for a plurality of operational sequences in the IC package fabrication process, can improve the output that whole encapsulation is produced thus.
Although the front mainly is to have described the preferred embodiment of the present invention with reference to IC element and manufacturing thereof, obviously, the present invention is not limited to the cleaning of this product.For example, the present invention can be used to clean the surface of hard disk, the magnetic of cleaning disc driver reads the sidewall of arm, micropore, PCB boring etc. before coating protective layer or other layer.In addition, thus the present invention can be used to make element surface such as polyimide surface modification to improve its cementability.
Although the present invention is the description of carrying out with reference to preferred embodiment, obviously terminology used here all is used for explanation and non-limiting, on the basis of the protection range that does not break away from claims of the present invention and limited also in other variation.
Therefore, the invention discloses a kind of method and apparatus from matrix such as IC element removal material.This method comprises: power supply is provided for the electrode in the cavity that vacuumizes, and generates plasma in cavity, make at least a contact the in ion, atom and the free radical of matrix surface and plasma then.The power supply of supplying with electrode is preferably the DC power supply, and it is a variable, thereby and this power supply be preferably pulse voltage and prevent arc discharge.
Claims (41)
1, a kind of method that material is removed from a matrix surface, it may further comprise the steps:
Form a plasma with a power supply; And
In ion, atom or the free radical of matrix surface and plasma one or more are contacted,
Power supply wherein provides variable voltage, variable voltage be from the 0V pulse to-300V and-a voltage the 1000V.
2, method as claimed in claim 1, wherein pulse is once in the cycle at each continuous 3-30kHz for variable voltage.
3, method as claimed in claim 1, variable voltage wherein be from the 0V pulse to-380V and-a voltage the 600V.
4, method as claimed in claim 1, wherein pulse persistance 3 to the 20 μ s of variable voltage.
5, method as claimed in claim 1, comprising two electrode of opposite are arranged, wherein power supply is given one of them electrode power supply, and another electrode is for floating, and matrix just is arranged on the electrode of floating.
6, method as claimed in claim 1, comprising two electrode of opposite are arranged, wherein power supply is given one of them electrode power supply, another electrode grounding, and matrix just is arranged on the electrode of ground connection.
7, method as claimed in claim 1, comprising two electrode of opposite are arranged, wherein power supply is given one of them electrode power supply, and another electrode is for floating, and matrix just is arranged on described one of them electrode.
8, method as claimed in claim 1, comprising two electrode of opposite are arranged, wherein power supply is given one of them electrode power supply, and another electrode is a ground connection, and matrix just is arranged on described one of them electrode.
9, method as claimed in claim 1, plasma wherein is at O
2Environment form down.
10, method as claimed in claim 1, plasma wherein is at O
2/ CF
4Environment form down.
11, method as claimed in claim 1, plasma wherein forms in the cavity that is evacuated down to the 80-1500 millitorr.
12, as the method for one of claim 5-8, comprising two matrixes that are arranged on the electrode.
13, as the method for one of claim 5-8, comprising a plurality of electrodes arranged apart are arranged, wherein at least some electrodes support each matrix in a plurality of matrixes respectively.
14, as the method for one of claim 5-8, wherein have an electrode at least, two sides that it is opposite or one side wherein support at least two electrodes.
15, method as claimed in claim 1, matrix wherein be IC, IC element, IC mould, tube core, wafer, ball lattice display, IC encapsulation, lead frame, PCB, microtubule, dish fixed mount, read in arm or the hard disk.
16, method as claimed in claim 1, material wherein are a kind of in organic material, organic dirt, dissolvent residual or the epoxy resin.
17, a kind of method that material is removed from a matrix surface, it may further comprise the steps:
With matrix be arranged in a vacuum-pumping, wherein have in the cavity of an electrode;
Thereby provide variable voltage in cavity, between electrode and matrix, to form plasma to electrode; And
Thereby in ion, atom or the free radical of matrix surface and plasma one or more are contacted remove lip-deep a part of material at least,
Wherein variable voltage be from the 0V pulse to-300V and-a voltage the 1000V.
18, as the method for claim 17, wherein pulse is once in the cycle at each continuous 3-30kHz for variable voltage.
19, as the method for claim 17, variable voltage wherein be from the 0V pulse to-380V and-a voltage the 600V.
20, as the method for claim 17, pulse persistance 3 to the 20 μ s of variable voltage wherein.
21, as the method for claim 17, comprising two electrode of opposite are arranged, wherein power supply is given one of them electrode power supply, and another electrode is for floating, and matrix just is arranged on the electrode of floating.
22, as the method for claim 17, comprising two electrode of opposite are arranged, wherein power supply is given one of them electrode power supply, another electrode grounding, and matrix just is arranged on the electrode of ground connection.
23, as the method for claim 17, comprising two electrode of opposite are arranged, wherein power supply is given one of them electrode power supply, and another electrode is for floating, and matrix just is arranged on described one of them electrode.
24, as the method for claim 17, comprising two electrode of opposite are arranged, wherein power supply is given one of them electrode power supply, and another electrode is a ground connection, and matrix just is arranged on described one of them electrode.
25, as the method for claim 17, plasma wherein is at O
2Environment form down.
26, as the method for claim 17, plasma wherein is at O
2/ CF
4Environment form down.
27, as the method for claim 17, plasma wherein forms in the cavity that is evacuated down to the 80-1500 millitorr.
28, as the method for one of claim 21-24, comprising two matrixes that are arranged on the electrode.
29, as the method for one of claim 21-24, comprising a plurality of electrodes arranged apart are arranged, wherein at least some electrodes support each matrix in a plurality of matrixes respectively.
30, as the method for one of claim 21-24, wherein have an electrode at least, two sides that it is opposite or one side wherein support at least two electrodes.
31, as the method for claim 17, matrix wherein be IC, IC element, IC mould, tube core, wafer, ball lattice display, IC encapsulation, lead frame, PCB, microtubule, dish fixed mount, read in arm or the hard disk.
32, as the method for claim 17, material wherein is a kind of in organic material, organic dirt, dissolvent residual or the epoxy resin.
33, a kind of device that material is removed from a matrix surface, it comprises:
One vacuum cavity;
Be arranged in the electrode in the vacuum cavity; And
Power supply, thus it is used for providing variable voltage to form plasma in cavity to electrode, and in the ion of plasma, atom or the free radical one or more contact with matrix surface,
Power supply wherein provides variable voltage, variable voltage be from the 0V pulse to-300V and-a voltage the 1000V.
34, as the device of claim 33, it includes two electrode of opposite, and wherein power supply is given one of them electrode power supply, and another electrode is for floating, and matrix just is arranged on the electrode of floating.
35, as the device of claim 33, it includes two electrode of opposite, and wherein power supply is given one of them electrode power supply, another electrode grounding, and matrix just is arranged on the electrode of ground connection.
36, as the device of claim 33, it includes two electrode of opposite, and wherein power supply is given one of them electrode power supply, and another electrode is for floating, and matrix just is arranged on described one of them electrode.
37, as the device of claim 33, it includes two electrode of opposite, and wherein power supply is given one of them electrode power supply, and another electrode is a ground connection, and matrix just is arranged on described one of them electrode.
38, as the device of one of claim 33 to 37, it includes a plurality of electrodes arranged apart, and wherein at least some electrodes support each matrix in a plurality of matrixes respectively.
39, as the device of claim 33, wherein vacuum cavity comprises an opening, and this opening is suitable for a face seal adjacency with conveyer, and wherein matrix is arranged on the conveyer.
40, as the device of claim 33, matrix wherein be IC, IC element, IC mould, tube core, wafer, ball lattice display, IC encapsulation, lead frame, PCB, microtubule, dish fixed mount, read in arm or the hard disk.
41, as the device of claim 33, material wherein is a kind of in organic material, organic dirt, dissolvent residual or the epoxy resin.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0418494A GB2417251A (en) | 2004-08-18 | 2004-08-18 | Removing material from a substrate surface using plasma |
| GB0418494.1 | 2004-08-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1750231A CN1750231A (en) | 2006-03-22 |
| CN100468613C true CN100468613C (en) | 2009-03-11 |
Family
ID=33042295
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100905052A Active CN100468613C (en) | 2004-08-18 | 2005-08-17 | Method and apparatus for removing material from a substrate surface |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20060037700A1 (en) |
| JP (1) | JP2006093669A (en) |
| CN (1) | CN100468613C (en) |
| GB (1) | GB2417251A (en) |
| SG (1) | SG120253A1 (en) |
Cited By (1)
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| CN105283580A (en) * | 2013-04-11 | 2016-01-27 | 离子射线服务公司 | Ion-implantation machine having increased productivity |
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| JP4760609B2 (en) * | 2006-08-17 | 2011-08-31 | パナソニック株式会社 | Component mounting method and apparatus on board |
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| US7563725B2 (en) * | 2007-04-05 | 2009-07-21 | Solyndra, Inc. | Method of depositing materials on a non-planar surface |
| US7855156B2 (en) * | 2007-05-09 | 2010-12-21 | Solyndra, Inc. | Method of and apparatus for inline deposition of materials on a non-planar surface |
| US20090011573A1 (en) * | 2007-07-02 | 2009-01-08 | Solyndra, Inc. | Carrier used for deposition of materials on a non-planar surface |
| US8443558B2 (en) * | 2007-10-15 | 2013-05-21 | Solyndra Llc | Support system for solar energy generator panels |
| CN101874293B (en) * | 2008-02-26 | 2011-11-30 | 株式会社岛津制作所 | Method for plasma deposition and plasma CVD system |
| US8697553B2 (en) * | 2008-06-11 | 2014-04-15 | Intevac, Inc | Solar cell fabrication with faceting and ion implantation |
| US8749053B2 (en) * | 2009-06-23 | 2014-06-10 | Intevac, Inc. | Plasma grid implant system for use in solar cell fabrications |
| JP5769451B2 (en) * | 2011-03-07 | 2015-08-26 | キヤノン株式会社 | Imprint apparatus and article manufacturing method |
| MY175007A (en) | 2011-11-08 | 2020-06-02 | Intevac Inc | Substrate processing system and method |
| US9198274B2 (en) * | 2012-07-05 | 2015-11-24 | Sputtering Components, Inc. | Ion control for a plasma source |
| TWI570745B (en) | 2012-12-19 | 2017-02-11 | 因特瓦克公司 | Grid for plasma ion implant |
| CN105448667A (en) * | 2015-12-23 | 2016-03-30 | 苏州工业园区纳米产业技术研究院有限公司 | Wafer surface smudge cleaning method |
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-
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- 2005-08-15 US US11/203,895 patent/US20060037700A1/en not_active Abandoned
- 2005-08-16 JP JP2005235884A patent/JP2006093669A/en active Pending
- 2005-08-17 CN CNB2005100905052A patent/CN100468613C/en active Active
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| CN105283580A (en) * | 2013-04-11 | 2016-01-27 | 离子射线服务公司 | Ion-implantation machine having increased productivity |
Also Published As
| Publication number | Publication date |
|---|---|
| US20060037700A1 (en) | 2006-02-23 |
| GB0418494D0 (en) | 2004-09-22 |
| JP2006093669A (en) | 2006-04-06 |
| SG120253A1 (en) | 2006-03-28 |
| GB2417251A (en) | 2006-02-22 |
| CN1750231A (en) | 2006-03-22 |
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