WO2004049427A1 - Method and device for joining - Google Patents

Method and device for joining Download PDF

Info

Publication number
WO2004049427A1
WO2004049427A1 PCT/JP2003/015178 JP0315178W WO2004049427A1 WO 2004049427 A1 WO2004049427 A1 WO 2004049427A1 JP 0315178 W JP0315178 W JP 0315178W WO 2004049427 A1 WO2004049427 A1 WO 2004049427A1
Authority
WO
WIPO (PCT)
Prior art keywords
joining
bonding
objects
joined
energy wave
Prior art date
Application number
PCT/JP2003/015178
Other languages
French (fr)
Japanese (ja)
Inventor
Akira Yamauchi
Original Assignee
Toray Engineering Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toray Engineering Co., Ltd. filed Critical Toray Engineering Co., Ltd.
Priority to AU2003284473A priority Critical patent/AU2003284473A1/en
Publication of WO2004049427A1 publication Critical patent/WO2004049427A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7501—Means for cleaning, e.g. brushes, for hydro blasting, for ultrasonic cleaning, for dry ice blasting, using gas-flow, by etching, by applying flux or plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/751—Means for controlling the bonding environment, e.g. valves, vacuum pumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/757—Means for aligning
    • H01L2224/75753—Means for optical alignment, e.g. sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/812—Applying energy for connecting
    • H01L2224/81201—Compression bonding
    • H01L2224/81203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Definitions

  • the present invention relates to a joining method and an apparatus for joining objects such as chips and wafers, various semiconductors, various circuit boards, and the like having a bonding portion on a surface of a base material.
  • Japanese Patent No. 2791429 discloses a method for joining silicon wafers together in a vacuum at room temperature prior to joining.
  • a bonding method of a silicon wafer is disclosed, in which an active gas ion beam or an inert gas fast atom beam is irradiated to perform etching.
  • oxides, organic substances, etc. on the bonding surface of the silicon wafer are blown away by the above-mentioned beam to form a surface with activated atoms, and the surfaces are formed by a high bonding force between the atoms. Joined. Therefore, this method basically eliminates the need for heating for bonding, and enables bonding at room temperature or a low temperature close thereto by simply bringing the activated surfaces into contact with each other.
  • an object of the present invention is to make use of the advantage of the method of adjusting the parallelism by pressing the objects to be joined to each other, and to clean the alignment surface even after the adjustment of the parallelism, and furthermore, to wash the joint surface by one energy. It is an object of the present invention to provide a bonding method and an apparatus which can perform high-precision bonding easily and can perform high-precision bonding even when energy wave cleaning is used together.
  • a joining method provides a method for joining objects having a joint portion on the surface of a base material by pressing at least one object to the other object. Once they are imitated, they are locked in that position once, the two workpieces are separated from each other, the relative position between the two workpieces is aligned within a predetermined accuracy range, and then the two workpieces are brought into contact again, heated and heated.
  • the method is characterized in that the objects to be joined are joined by at least one of pressure and ultrasonic application.
  • At least one of the bonding surfaces of the workpieces can be cleaned by an energy wave.
  • the joining method according to the present invention when joining the objects to be joined having a joint portion on the surface of the base material, at least one of the objects to be joined is pressed against the other to be joined, and the posture thereof is adjusted. Once the workpieces are separated from each other, the workpieces are separated from each other.At least one of the workpieces is cleaned with a single energy wave, and then the workpieces are brought into contact again.
  • the method is characterized in that the objects to be joined are joined by at least one method.
  • the copying operation may be performed after provisional alignment.
  • the joint on the surface of the substrate is preferably made of metal, that is, a metal joint.
  • the bonding can be performed under atmospheric pressure.
  • the bonding can be performed in an inert gas atmosphere. Also in this case, it is preferable to reduce the pressure.
  • Plasma includes atmospheric plasma and RF plasma.
  • Ar plasma generated in an Ar gas atmosphere in order to maintain a cleaning effect and a good surface activation state after the cleaning and before bonding.
  • the joining method according to the present invention is particularly suitable for joining metal joints whose surfaces are formed of any one of gold, copper, A1, In, and Sn.
  • the same kind of metal such as gold, copper, A1, In, or Sn, or any two kinds of dissimilar metals, or one of which is gold and the other is gold
  • the combination may be any of copper, Al, In, and Sn.
  • gold bonding bonding can be performed reliably even at room temperature. However, even in cases other than gold bonding (for example, bonding of gold / copper, gold / aluminum, etc.), bonding at room temperature or a low temperature close thereto can be made possible.
  • the entire electrode or the like forming the metal joint can be made of gold, but only the surface can be made of gold.
  • the form for forming the surface with gold is not particularly limited, and a form of gold plating or a form in which a gold thin film is formed by sputtering / evaporation may be adopted.
  • the hardness is reduced to 100 or less by annealing.
  • the surface hardness HV is in the range of 30 to 70 (for example, the average HV is 50).
  • a joining device is a device for joining objects to be joined having a joint portion on a surface of a base material, and at least one object is pressed against the other object to be imitated.
  • a lock mechanism that once snaps into that position, an alignment mechanism that adjusts the relative position between the workpieces that are separated in the locked state within a predetermined accuracy range, and a rain workpiece that is aligned. Are brought into contact again with each other, and a joining means provided with at least one of heating, pressurization, and ultrasonic application.
  • the joining apparatus should include means for cleaning at least one joining surface of the workpieces with an energy wave after the copying operation by the copying mechanism and before or after the alignment by the alignment mechanism. You can also.
  • the joining device is a device for joining objects to be joined having a joint portion on a surface of a base material, wherein at least one object is pressed against the other object to be imitated.
  • a lock mechanism that once latches to that position with the lock, a means for cleaning at least one of the bonded surfaces of both bonded objects separated in the locked state by an energy wave, and after cleaning The object to be joined is brought into contact again with a joining means provided with at least one of heating, pressurizing, and ultrasonic application.
  • the joining apparatus according to the present invention may have a temporary alignment mechanism for performing a temporary alignment before the copying operation.
  • the joint on the surface of the base is made of a metal, that is, a metal joint.
  • the joining means may be configured to include a decompression means or an inert gas supply means (for example, an Ar gas supply means).
  • the energy wave cleaning means can be configured as plasma irradiation means (including atmospheric pressure plasma and RF plasma irradiation means). Also, plasma irradiation means Ar plasma irradiation means can also be used.
  • the means for cleaning with the energy wave is a means for generating an energy wave of an energy or more capable of etching at a depth of 1 nm or more on the entire surface of the joining portion to be joined.
  • the combination of the surface metal types of both joints to be bonded is the same metal of any one of gold, copper, A1, In, and Sn, or any two different metals.
  • a combination of one of gold and the other of copper, A1, In, or Sn can be used.
  • bonding becomes the easiest.
  • the surface hardness of at least one joint is 110 or less, preferably 100 or less in Vickers hardness HV.
  • the present invention also provides a joined body produced by the joining method as described above.
  • the bonded body according to the present invention is a bonded body of bonded objects having a bonded portion on the surface of a base material, and at least one bonded object is pressed against the other bonded object. Once locked in that position, the two workpieces are separated from each other, the relative positions between the two workpieces are aligned within a predetermined accuracy range, and then the two workpieces are brought into contact again, heated, pressurized, It is characterized by being manufactured by joining objects to be joined by at least one method of applying ultrasonic waves.
  • the joined body according to the present invention is a joined body of joined objects having a joint portion on the surface of a base material, and at least one of the joined objects is pressed against the other to be joined. Once locked in that position, the two workpieces are separated from each other, at least the bonded surface of one of the workpieces is cleaned with energy waves, and then the two workpieces are brought into contact again, and heated, pressurized, and ultrasonic waves applied. It is characterized by being produced by joining objects to be joined together by at least one method.
  • At least one of the joined objects can be made of a semiconductor.
  • the bonding method and apparatus as described above, at least one of the bonded objects is pressed against the other bonded object before cleaning the bonded surfaces with the alignment or / and the energy wave of the both bonded objects. Imitate, the parallelism of both is almost perfectly matched In this state, once locked in that position, the two workpieces are separated from each other, and then alignment to keep the relative position between the two workpieces within a predetermined accuracy range, and / or cleaning of the bonding surface with energy waves Done. Thereafter, the objects are brought into contact again, and the objects are joined by at least one of heating, pressurizing, and applying ultrasonic waves.
  • the joining surfaces are not cleaned or heated by the energy wave, and the joining surfaces do not stick to each other. Since the alignment can be performed in a state where the parallelism is adjusted by the copying operation, the relative position between the two workpieces can be easily adjusted with high accuracy, and the workpiece can be joined in that state. In addition, since the bonding surface is cleaned by the energy-wave in a state where the parallelism between the two workpieces is almost perfectly matched by the copying operation, the two bonded surfaces activated after cleaning are left as they are. The contact makes it possible to achieve very efficient and good bonding. Bonding can be performed by simply applying pressure, and a small bonding load is sufficient especially when cleaning the bonding surface by energy waves.
  • bonding can be performed more reliably and easily.
  • the joining method and the apparatus according to the present invention after the parallelism between the two articles is adjusted by the copying operation, the two articles are once locked, and the two articles are separated from each other. And / or energy wave cleaning, and bonding is performed afterwards. While taking advantage of the parallelism adjustment by copying operation as it is, it is possible to clean the bonding surface with a predetermined alignment energy wave.
  • the joining can be performed with high precision and easily.
  • FIG. 1 is a longitudinal sectional view of a joining device according to one embodiment of the present invention.
  • FIG. 2 is a partial schematic longitudinal sectional view showing the copying operation in the apparatus shown in FIG.
  • FIG. 3 is a partial schematic longitudinal sectional view showing a locking operation in the device of FIG.
  • FIG. 4 is a partial schematic front view showing an alignment step in the apparatus of FIG.
  • FIG. 5 is a partial schematic longitudinal sectional view showing an energy wave cleaning step in the apparatus of FIG.
  • FIG. 6 is a partial schematic front view showing a joining step in the apparatus of FIG.
  • FIG. 1 shows a joining apparatus 1 according to one embodiment of the present invention.
  • a case where one of the substrates is a chip 2 and the other is a substrate 3 is illustrated as an example of the objects to be bonded to each other.
  • a plurality of metal joints 4 (two shown in FIG. 1) constituting the electrodes are provided on the chip 2, and a metal joint 5 constituting the corresponding electrodes is provided on the substrate 3.
  • the chip 2 is held by a chip holding means 6 as one of the objects to be bonded
  • the substrate 3 is held by a substrate holding means 7 as the other object to be bonded.
  • the position of the chip holding means 6 can be adjusted in the Z direction (vertical direction), and the position of the substrate holding means 7 can be adjusted in the X and Y directions (horizontal direction) and / or the rotation direction (0 direction). It can be adjusted.
  • the substrate holding means 7 as described above is generally mounted so as to be capable of translation and / or rotation. However, if necessary, the substrate holding means 7 may be mounted in a mode in which they are combined with elevation (movement in the Z direction). Good. Further, the chip holding means 6 may be configured to perform not only the elevating operation but also the parallel moving and / or rotating operation.
  • the chip 2 means, for example, an IC chip, a semiconductor chip, an optical element, a surface mount component, a wafer, and the like, regardless of the type or size, on the side to be bonded to the substrate 3.
  • the substrate 3 means, for example, a resin substrate, a glass substrate, a film substrate, a chip, a wafer, and the like, irrespective of the type and size, all of the side bonded to the chip 2.
  • the part for directly holding the chip 2 in the chip holding means 6 and the part for directly holding the substrate 3 in the substrate holding means 7 are constituted by electrode tools 8 and 9, respectively, for plasma generation. Is configured to function as an electrode You.
  • a power supply (not shown) for generating an RF plasma is connected to one of the electrode tools 8 and 9 so that selection can be switched.
  • the chamber wall 15 (movable wall) is grounded.
  • a predetermined high-frequency voltage is applied from an RF plasma generation power source, for example, under a reduced pressure condition, the surface of the metal joint 4 of the chip 2 and the metal joint 5 of the substrate 3 are interposed between the electrode tools 8 and 9.
  • the configuration of the plasma electrode includes a method of cleaning both surfaces by switching one of the upper and lower electrodes as an anode and a ground, and a method of cleaning both surfaces by switching the upper or lower electrode as a force source with the chamber wall being grounded.
  • the chip holding means 6 and the substrate holding means 7 have a built-in heater so that the object to be bonded can be heated via at least one of the electrode tools. In addition, one of the objects can be electrostatically held.
  • the illustration of the heater and the electrostatic chuck means is omitted.
  • reference numeral 10a denotes an electrode terminal for an electrostatic chuck built in the substrate holding means 7 side
  • 11a denotes a terminal for a plasma electrode
  • 12a denotes a terminal for a heater.
  • the power is supplied via the electrode connector 13a. It is preferable that the pattern is from the surface layer to the electrostatic chuck, the plasma electrode, and the heater.
  • 10 b is an electrode terminal for an electrostatic chuck built in the chip holding means 6 side
  • 11 b is a terminal for a plasma electrode
  • 12 b is a terminal for a heater
  • 13 b is a power supply terminal. Electrode connectors are indicated respectively.
  • the two workpieces 2 and 3 are moved around the two workpieces 2 and 3 until they come into contact with one of the workpiece holding means (in this embodiment, the substrate holding means 7), and are internally moved.
  • a local chamber 14 (a local chamber 14 is shown by a two-dot chain line in FIG. 1) having a local closed space for confining the space 3.
  • the movable wall 1 that can move in the direction of reducing the volume of the local chamber 14 (moving in the downward direction in the present embodiment) following the movement of the article holding means (the chip holding means 6 in the present embodiment). 5 are provided.
  • the movable wall 15 is formed into a cylindrical rigid wall structure.
  • the movable wall ascending port 16, the movable wall descending port 17, and a cylinder means 19 having an internal sealing mechanism 18 are used as shown in FIG. Up and down It is possible to move.
  • An elastically deformable sealing material 20 is provided at the tip of the movable wall 15 to more securely seal and seal the inside of the mouth-to-chamber 14 to the outside in the above-mentioned contact state. Can be done.
  • a vacuum pump 21 is connected to the substrate holding means 7 as a vacuum suction means for reducing the pressure in the local chamber 14 to a predetermined vacuum state with respect to the local chamber 14 formed as described above. ing.
  • the air or gas in the local chamber 14 is sucked by the vacuum pump 21 through the suction passage 22.
  • a specific inert gas such as argon gas (Ar gas) is supplied into the local chamber 14 on the substrate holding means 7 side.
  • Ar gas argon gas
  • a copy / lock mechanism 24 is provided below the substrate holding means 7. Copying •
  • the lock mechanism 24 includes a spherical member 26 having a convex spherical surface 25 fixed to the lower surface side of the substrate holding means 7 and a receiving member 2 having a concave spherical surface 27 receiving the spherical member 26. 8 are provided.
  • the spherical member 26 can be freely moved along the concave spherical surface 27 of the receiving member 18 through the air floating mechanism 29 so that the convex sphere-surface 25 can move freely.
  • the parallelism between the two automatically becomes almost perfectly matched.
  • the lock mechanism of the copying / mouthing mechanism 24 is configured as follows. That is, a cylinder 30 and a piston 31 housed therein are provided over the spherical member 26 and the receiving member 28, and air is supplied to the lock port 3 of the air cylinder mechanism. As a result, the piston 31 is moved downward, so that the position and the posture of the spherical member 26 are locked with respect to the receiving member 8 via the piston 3 1, and air is supplied to the free port 33. Is supplied, the piston 31 is moved upward, the lip is released, and the spherical member 26 is freely copied with respect to the receiving member 28.
  • the bonding method according to the present invention can be performed as follows.
  • the chip holding means 6 is raised, and the chip 2 and the substrate 3 are separated from each other with the parallelism being matched. After the separation, alignment is performed as shown in FIG. 4 and / or the bonding surface is cleaned with energy waves (plasma) as shown in FIG. 5, or both. When performing both of these, the energy wave cleaning can be performed before or after the alignment.
  • plasma energy waves
  • the alignment means inserts a recognition means 40 (for example, a two-view camera) having two upper and lower fields of view between the chip 2 and the substrate 3 which are separated from each other.
  • the reading is performed by reading the alignment marks attached to each of the above, and finely adjusting the relative position between the two based on the read upper side. Since the parallelism between the two has already been adjusted by the above-described copying operation, it is sufficient to finely adjust the substrate 3 side in the X, Y, and 0 directions. For example, when the entire joining apparatus is surrounded by a vacuum chamber, it is difficult to operate the two-field recognition means 40 in a vacuum region.
  • infrared Recognition means for example, an infrared camera
  • infrared Camera that can read both the alignment mark of the chip 2 and the alignment mark of the substrate 3 from the measurement wave that can be transmitted
  • Cleaning with an energy wave plasma in this embodiment
  • the movable wall 15 is lowered, and the sealing material 20 at the tip thereof abuts on the upper surface of the substrate holding means 7, and is sealed well and substantially sealed.
  • a local chamber 14 consisting of a space is formed.
  • Ar gas is supplied into the oral chamber 14 through the gas supply path 23, and the pressure in the local chamber 14 is reduced to a predetermined degree of vacuum by suction through the suction path 22.
  • plasma is generated between the electrode tools 8 and 9, and the surface of the metal joint 4 of the chip 2 and the surface of the metal joint 5 of the substrate 3, that is, each joint surface is cleaned by plasma, and the surface is suitable for joining.
  • Surface activated state In the above-mentioned plasma cleaning, in order to remove the surface foreign material layer on the bonding surface and sufficiently activate the surface, the plasma intensity and time are set so that the entire surface to be bonded of the metal bonding portion can be etched by 1 nm or more. It is preferable to set.
  • the energy wave cleaning may be performed before or after the alignment.
  • the chip holding means 6 is lowered so that the metal bonding portion 4 of the chip 2 and the substrate 3 are separated.
  • the metal joints 5 are joined together.
  • a joining load necessary for joining is applied.
  • good bonding can be achieved with an extremely small bonding load. Under these conditions, bonding to room temperature is possible.
  • heating is performed by a heater at the time of joining, joining becomes easier.
  • ultrasonic waves are applied instead of or in addition to the heater heating, bonding can be more easily performed.
  • This bonding can be performed in air or at atmospheric pressure.
  • the movable wall 15 of the oral chamber 14 can be moved up and down, it is possible to maintain the form of the local chamber 14 consisting of a substantially closed space even at the time of joining. Can be performed, and further under an inert gas atmosphere. Can also be joined. By performing bonding under reduced pressure or in an inert gas atmosphere, bonding with less impurities can be performed.
  • the parallelism adjustment is a problem. This can be performed without causing the occurrence, and the joining process can be performed in a state where the parallelism is well adjusted, and the joining can be performed under desirable conditions.
  • the chip and the substrate are shown.
  • the present invention can also be applied to the bonding of chips without electrodes to wafers, and the upper and lower objects to be bonded are semiconductors other than metal, glass, ceramics, and the like. In some cases. If there is no alignment mark, the external shape may be used.
  • the joining apparatus and method according to the present invention can be applied to all kinds of joining between objects to be joined having a metal joint, and are particularly suitable for joining when at least one of the objects to be joined is a semiconductor.

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing Of Electrical Connectors (AREA)
  • Wire Bonding (AREA)
  • Plasma Technology (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)

Abstract

In a method and device for joining objects to be joined having joints on the surfaces of base materials, the objects are once locked in a state where at least either of the objects to be joined is being pressed to the other for copying. After that, the objects to be joined are separated and the relative positions of the objects are aligned to a predetermined accuracy. Then, both objects to be joined are again brought into contact with each other and joined by at least heating, pressing, or by applying an ultrasonic wave. Because the objects to be joined are once locked after the parallelism between both objects is matched by copying operation, separated for the alignment and joined, a predetermined alignment can be performed using the advantage of parallelism adjustment by the copying operation. This provides excellent joining with high accuracy, which can be easily performed.

Description

明 糸田 書  Akira Itoda
接合方法および装置  Joining method and apparatus
技 術 分 野  Technical field
本発明は、 チップやウェハ一、 各種半導体、 各種回路基板等の、 基材の表面に 接合部を有する被接合物同士を接合する接合方法および装置に関する。  The present invention relates to a joining method and an apparatus for joining objects such as chips and wafers, various semiconductors, various circuit boards, and the like having a bonding portion on a surface of a base material.
背 景 技 術  Background technology
接合部を有する被接合物同士を接合する方法として、 特許第 2 7 9 1 4 2 9号 公報には、 シリコンウェハーの接合面同士を接合するに際し、 接合に先立って室 温の真空中で不活性ガスイオンビームまたは不活性ガス高速原子ビームを照射し てスパッ夕エッチングする、 シリ コンウェハーの接合法が開示されている。 この 接合法では、 シリコンウェハ一の接合面における酸化物や有機物等が上記のビ一 ムで飛ばされて活性化された原子で表面が形成され、 その表面同士が、 原子間の 高い結合力によって接合される。 したがって、 この方法では、 基本的に、 接合の ための加熱を不要化でき、 活性化された表面同士を単に接触させるだけで、 常温 またはそれに近い低温での接合が可能になる。  As a method for joining objects to be joined having a joint portion, Japanese Patent No. 2791429 discloses a method for joining silicon wafers together in a vacuum at room temperature prior to joining. A bonding method of a silicon wafer is disclosed, in which an active gas ion beam or an inert gas fast atom beam is irradiated to perform etching. In this bonding method, oxides, organic substances, etc. on the bonding surface of the silicon wafer are blown away by the above-mentioned beam to form a surface with activated atoms, and the surfaces are formed by a high bonding force between the atoms. Joined. Therefore, this method basically eliminates the need for heating for bonding, and enables bonding at room temperature or a low temperature close thereto by simply bringing the activated surfaces into contact with each other.
しかし、 この接合法において常温またはそれに近い低温での接合を行うには、 上記のようなエネルギー波によるエッチングにより表面活性化された接合面同士 を接合するに際し、 被接合物間に高い位置決め精度が求められるのは勿論のこと、 極めて高精度の平行度の調整が要求され、 接合面同士が密接に面接触した状態で 接合される必要がある。 平行度が微小に合っていないと、 確実な接合が困難にな る。 また、 平行度を一旦精密に合わせたとしても、 被接合物毎のばらつきにより、 平行度が微妙に狂う場合があり、 量産する場合に目標とする接合が困難になるお それがある。  However, in order to perform bonding at room temperature or a low temperature close to this temperature in this bonding method, high bonding accuracy between the workpieces is required when bonding the bonding surfaces activated by the etching using energy waves as described above. Needless to say, extremely high-precision adjustment of the parallelism is required, and the joining surfaces must be joined in close contact with each other. If the degree of parallelism is not very small, it will be difficult to make a secure connection. Even if the degree of parallelism is precisely adjusted once, the degree of parallelism may be slightly changed due to the variation among the objects to be bonded, and the target bonding may be difficult in mass production.
上記のようなエネルギー波による洗浄、 表面活性化とは異なる技術であるが、 被接合物間の平行度調整技術として、 被接合物同士を圧接し、 そのとき一方の被 接合物の保持手段に円弧面を設け、 被接合物同士が圧接される際に一方を他方に 倣わせるようにした技術が知られている （たとえば、 特開 2 0 0 1 - 2 3 0 2 7 7号公報） 。  This is a technique different from the above-mentioned cleaning and surface activation by energy waves.However, as a technique for adjusting the parallelism between the workpieces, the workpieces are pressed against each other and then used as a means for holding one workpiece. 2. Description of the Related Art There is known a technology in which an arc surface is provided so that when objects to be welded are pressed against each other, one of them is copied to the other (for example, Japanese Patent Application Laid-Open No. 2001-230277). .
ところが、 上記特開 2 0 0 1 - 2 3 0 2 7 7号公報に記載されたような平行度 調整方法を、 単に特許文献 1に記載されたような、 エネルギー波で接合面を洗浄 した被接合物に適用すると、 平行度調整のために被接合物同士を圧接させる際に 被接合物同士が接合されてしまい、 両者間の相対位置調整が実質的に不可能にな つてしまう。 However, the parallelism as described in the above-mentioned Japanese Patent Application Laid-Open No. 2000-123027 If the adjustment method is applied to a workpiece whose bonding surface has been cleaned with an energy wave, as described in Patent Document 1, simply, when the workpieces are pressed against each other to adjust the parallelism, They will be joined and the relative position adjustment between them will be virtually impossible.
発 明 の 開 示  Disclosure of the invention
そこで、 本発明の目的は、 被接合物同士を圧接させて平行度調整を行う方法の 利点をそのまま活かし、 前記平行度調整後においてもァライメン ト、 さらにはェ ネルギ一波による接合面の洗浄を可能とし、 高精度の接合を容易に行うことがで きるとともに、 エネルギー波洗浄を併用する場合にも高精度の接合を可能ならし める接合方法および装置を提供することにある。  Therefore, an object of the present invention is to make use of the advantage of the method of adjusting the parallelism by pressing the objects to be joined to each other, and to clean the alignment surface even after the adjustment of the parallelism, and furthermore, to wash the joint surface by one energy. It is an object of the present invention to provide a bonding method and an apparatus which can perform high-precision bonding easily and can perform high-precision bonding even when energy wave cleaning is used together.
上記目的を達成するために、 本発明に係る接合方法は、 基材の表面に接合部を 有する被接合物同士を接合するに際し、 少なく とも一方の被接合物を他方の被接 合物に押し付け倣わせた状態でその姿勢に一旦ロックし、 両被接合物を離間させ、 両被接合物間の相対位置を所定の精度範囲内にァライメントした後再度両被接合 物を接触させ、 加熱、 加圧、 超音波印加のいずれか少なく とも一つの方法により 被接合物同士を接合することを特徴とする方法からなる。  In order to achieve the above object, a joining method according to the present invention provides a method for joining objects having a joint portion on the surface of a base material by pressing at least one object to the other object. Once they are imitated, they are locked in that position once, the two workpieces are separated from each other, the relative position between the two workpieces is aligned within a predetermined accuracy range, and then the two workpieces are brought into contact again, heated and heated. The method is characterized in that the objects to be joined are joined by at least one of pressure and ultrasonic application.
この方法においては、 上記倣い動作後、 上記ァライメン ト前または後に、 少な くとも一方の被接合物の接合面をエネルギー波により洗浄することもできる。 また、 本発明に係る接合方法は、 基材の表面に接合部を有する被接合物同士を 接合するに際し、 少なく とも一方の被接合物を他方の被接合物に押し付け倣わせ た状態でその姿勢に一旦ロックし、 両被接合物を離間させ、 少なく とも一方の被 接合物の接合面をエネルギ一波により洗浄した後再度両被接合物を接触させ、 加 熱、 加圧、 超音波印加のいずれか少なく とも一つの方法により被接合物同士を接 合することを特徴とする方法からなる。  In this method, after the copying operation, before or after the alignment, at least one of the bonding surfaces of the workpieces can be cleaned by an energy wave. Further, in the joining method according to the present invention, when joining the objects to be joined having a joint portion on the surface of the base material, at least one of the objects to be joined is pressed against the other to be joined, and the posture thereof is adjusted. Once the workpieces are separated from each other, the workpieces are separated from each other.At least one of the workpieces is cleaned with a single energy wave, and then the workpieces are brought into contact again. The method is characterized in that the objects to be joined are joined by at least one method.
これら本発明に係る接合方法においては、 上記倣い動作を仮ァライメ ン トした 後に行うようにすることもできる。 先に仮ァライメントしておく ことにより、 倣 い動作により両被接合物間の平行度を合わせる際の、 相対位置関係のずれ量を小 さく抑えることができる。 上記各方法において、 基材の表面の接合部は、 金属か らなることが、 つまり金属接合部であることが好ましい。 上記接合は、 大気圧下で行うことも可能である。 ただし、 接合面をエネルギー 波により洗浄した後接合する場合には、 エネルギ一波洗浄による表面活性化状態 をできる限り維持した状態で接合するために、 接合を減圧下で行うことが好まし い。 また、 不活性ガス雰囲気下で接合を行うこともできる。 この場合にも、 減圧 することが好ましい。 In the joining method according to the present invention, the copying operation may be performed after provisional alignment. By performing the temporary alignment in advance, it is possible to reduce the amount of deviation in the relative positional relationship when the parallelism between the two workpieces is adjusted by the copying operation. In each of the above methods, the joint on the surface of the substrate is preferably made of metal, that is, a metal joint. The bonding can be performed under atmospheric pressure. However, in the case of joining after cleaning the joint surface with an energy wave, it is preferable to perform the joining under reduced pressure in order to keep the surface activated state by the single-wave energy cleaning as much as possible. Further, the bonding can be performed in an inert gas atmosphere. Also in this case, it is preferable to reduce the pressure.
接合面洗浄用のエネルギー波としては、 取り扱いやすさや強度制御の行いやす さの点から、 プラズマを用いることが好ましい。 プラズマとしては、 大気圧プラ ズマ、 R Fプラズマも含まれる。 また、 とくに洗浄効果や洗浄後接合までに良好 な表面活性化状態に維持するために、 A rガス雰囲気中で発生させた A rブラズ マを用いることが好ましい。  As the energy wave for cleaning the bonding surface, it is preferable to use plasma from the viewpoint of easy handling and easy control of the strength. Plasma includes atmospheric plasma and RF plasma. In addition, it is preferable to use an Ar plasma generated in an Ar gas atmosphere in order to maintain a cleaning effect and a good surface activation state after the cleaning and before bonding.
上記エネルギー波による洗浄では、 接合部の接合される全表面で 1 n m以上の 深さにエッチングすることが好ましい。 このような深さ以上にエッチング可能な エネルギーのエネルギー波で洗浄することにより、 接合部同士を常温接合する場 合においても、 接合に必要な表面性状を得ることが可能になる。  In the above-described cleaning using an energy wave, it is preferable to etch the entire surface of the bonding portion to a depth of 1 nm or more. By cleaning with an energy wave of an energy that can be etched to such a depth or more, it is possible to obtain the surface properties required for bonding even when bonding the bonded portions at room temperature.
本発明に係る接合方法は、 とくに、 表面が金、 銅、 A 1、 I n、 S nのいずれ かにより構成されている金属接合部同士を接合する場合に好適である。 たとえば、 互いに接合される金属接合部の組み合わせとして、 金、 銅、 A 1、 I n、 S nの いずれかの同種金属同士、 あるいは任意の 2つの異種金属同士、 あるいは、 一方 を金とし他方を銅、 A l、 I n、 S nのいずれかとする組み合わせとすることが できる。 中でも、 金同士の接合の場合、 常温でも確実に接合できるようになる。 ただし、 金同士の接合以外の場合でも （たとえば、 金/銅、 金/アルミニウム等 の接合等） 、 常温あるいはそれに近い低温での接合を可能とすることができる。 また、 少なくとも一方の金属接合部を特定の金属、 たとえば金で構成する場合、 金属接合部を形成する電極等の全体を金で構成することもできるが、 表面だけを 金で構成することもできる。 表面を金で構成するための形態はとくに限定されず、 金めつきの形態や金薄膜をスパッタリングゃ蒸着等により形成した形態を採用す ればよい。  The joining method according to the present invention is particularly suitable for joining metal joints whose surfaces are formed of any one of gold, copper, A1, In, and Sn. For example, as a combination of metal joints to be joined to each other, the same kind of metal such as gold, copper, A1, In, or Sn, or any two kinds of dissimilar metals, or one of which is gold and the other is gold The combination may be any of copper, Al, In, and Sn. Above all, in the case of gold bonding, bonding can be performed reliably even at room temperature. However, even in cases other than gold bonding (for example, bonding of gold / copper, gold / aluminum, etc.), bonding at room temperature or a low temperature close thereto can be made possible. Further, when at least one of the metal joints is made of a specific metal, for example, gold, the entire electrode or the like forming the metal joint can be made of gold, but only the surface can be made of gold. . The form for forming the surface with gold is not particularly limited, and a form of gold plating or a form in which a gold thin film is formed by sputtering / evaporation may be adopted.
上記接合部同士の接合に際し、 表面同士が良好に密着できるように、 少なく と も一方の接合部の表面硬度がピツカ一ス硬度 H Vで 1 2 0以下、 さらに好ましく はアニーリングにより硬度を 1 0 0以下に下げたものがよい。 たとえば、 表面硬 度 H Vを 3 0〜 7 0の範囲内 （たとえば、 平均 H Vを 5 0 ) とすることが好まし い。 このような低硬度としておく ことで、 接合面同士が接触された時、 とくに接 合荷重印加時に接合部の表面が適当に変形し、 より密接な接合が可能となる。 本発明に係る接合装置は、 基材の表面に接合部を有する被接合物同士を接合す る装置であって、 少なく とも一方の被接合物を他方の被接合物に押し付け倣わせ た状態でその姿勢に一旦口ックする倣い · ロック機構と、 ロック状態で離間され た両被接合物間の相対位置を所定の精度範囲内に調整するァライメント機構と、 ァライメ ン ト後の雨被接合物を再度接触させ、 加熱、 加圧、 超音波印加のいずれ か少なく とも一つの手段を備えた接合手段とを有することを特徴とするものから なる。 At the time of joining the above joints, at least one joint has a surface hardness HV of 120 or less, more preferably a picker hardness HV, so that the surfaces can be in good contact with each other. Preferably, the hardness is reduced to 100 or less by annealing. For example, it is preferable that the surface hardness HV is in the range of 30 to 70 (for example, the average HV is 50). By setting such low hardness, when the joining surfaces are brought into contact with each other, particularly when a joining load is applied, the surface of the joining portion is appropriately deformed, and a more intimate joining can be achieved. A joining device according to the present invention is a device for joining objects to be joined having a joint portion on a surface of a base material, and at least one object is pressed against the other object to be imitated. A lock mechanism that once snaps into that position, an alignment mechanism that adjusts the relative position between the workpieces that are separated in the locked state within a predetermined accuracy range, and a rain workpiece that is aligned. Are brought into contact again with each other, and a joining means provided with at least one of heating, pressurization, and ultrasonic application.
この接合装置においては、 上記倣い ' ロック機構による倣い動作後、 上記ァラ ィメ ント機構によるァライメント前または後に、 少なく とも一方の被接合物の接 合面をエネルギー波により洗浄する手段を有することもできる。  The joining apparatus should include means for cleaning at least one joining surface of the workpieces with an energy wave after the copying operation by the copying mechanism and before or after the alignment by the alignment mechanism. You can also.
また、 本発明に係る接合装置は、 基材の表面に接合部を有する被接合物同士を 接合する装置であって、 少なく とも一方の被接合物を他方の被接合物に押し付け 倣わせた状態でその姿勢に一旦口ックする倣い · ロック機構と、 口ック状態で離 間された両被接合物の少なく とも一方の被接合物の接合面をエネルギー波により 洗浄する手段と、 洗浄後再度両被接合物を接触させ、 加熱、 加圧、 超音波印加の いずれか少なく とも一つの手段を備えた接合手段とを有することを特徴とするも のからなる。  Also, the joining device according to the present invention is a device for joining objects to be joined having a joint portion on a surface of a base material, wherein at least one object is pressed against the other object to be imitated. A lock mechanism that once latches to that position with the lock, a means for cleaning at least one of the bonded surfaces of both bonded objects separated in the locked state by an energy wave, and after cleaning The object to be joined is brought into contact again with a joining means provided with at least one of heating, pressurizing, and ultrasonic application.
これら本発明に係る接合装置においては、 上記倣い動作前に仮ァライメン卜を 行う仮ァライメント機構を有することもできる。 また、 上記各装置において、 基 材の表面の接合部は、 金属からなることが、 つまり金属接合部であることが好ま しい。  The joining apparatus according to the present invention may have a temporary alignment mechanism for performing a temporary alignment before the copying operation. In each of the above devices, it is preferable that the joint on the surface of the base is made of a metal, that is, a metal joint.
上記接合手段は減圧手段を備えたもの、 不活性ガス供給手段 （たとえば、 A r ガス供給手段） を備えたものに構成することもできる。  The joining means may be configured to include a decompression means or an inert gas supply means (for example, an Ar gas supply means).
また、 エネルギー波洗浄手段としてはプラズマ照射手段 （大気圧プラズマ、 R Fプラズマ照射手段を含む） に構成することができる。 また、 プラズマ照射手段 として A rブラズマ照射手段に構成することもできる。 In addition, the energy wave cleaning means can be configured as plasma irradiation means (including atmospheric pressure plasma and RF plasma irradiation means). Also, plasma irradiation means Ar plasma irradiation means can also be used.
また、 前記エネルギー波により洗浄する手段としては、 接合部の接合される全 表面で 1 n m以上の深さのエツチングが可能なエネルギー以上のエネルギー波を 発生させる手段からなることが好ましい。  Further, it is preferable that the means for cleaning with the energy wave is a means for generating an energy wave of an energy or more capable of etching at a depth of 1 nm or more on the entire surface of the joining portion to be joined.
また、 接合される両接合部の表面金属種の組み合わせは、 前述したように、 金、 銅、 A 1、 I n、 S nのいずれかの同種金属同士、 あるいは任意の 2つの異種金 属同士、 あるいは、 一方を金とし他方を銅、 A 1、 I n、 S nのいずれかとする 組み合わせとすることができる。 中でも、 金同士の組み合わせとする場合、 接合 が最も容易になる。  In addition, as described above, the combination of the surface metal types of both joints to be bonded is the same metal of any one of gold, copper, A1, In, and Sn, or any two different metals. Alternatively, a combination of one of gold and the other of copper, A1, In, or Sn can be used. Above all, when gold is combined, bonding becomes the easiest.
また、 少なく とも一方の接合部の表面硬度がビッカース硬度 H Vで 1 1 0以下、 好ましくは 1 0 0以下とされていることが好ましい。  It is preferable that the surface hardness of at least one joint is 110 or less, preferably 100 or less in Vickers hardness HV.
本発明はまた、 前記のような接合方法により作製された接合体も提供する。 す なわち、 本発明に係る接合体は、 基材の表面に接合部を有する被接合物同士の接 合体であって、 少なく とも一方の被接合物を他方の被接合物に押し付け倣わせた 状態でその姿勢に一旦ロックし、 両被接合物を離間させ、 両被接合物間の相対位 置を所定の精度範囲内にァライメントした後再度両被接合物を接触させ、 加熱、 加圧、 超音波印加のいずれか少なく とも一つの方法により被接合物同士を接合す ることによって作製されたことを特徴とするものからなる。  The present invention also provides a joined body produced by the joining method as described above. In other words, the bonded body according to the present invention is a bonded body of bonded objects having a bonded portion on the surface of a base material, and at least one bonded object is pressed against the other bonded object. Once locked in that position, the two workpieces are separated from each other, the relative positions between the two workpieces are aligned within a predetermined accuracy range, and then the two workpieces are brought into contact again, heated, pressurized, It is characterized by being manufactured by joining objects to be joined by at least one method of applying ultrasonic waves.
また、 本発明に係る接合体は、 基材の表面に接合部を有する被接合物同士の接 合体であって、 少なく とも一方の被接合物を他方の被接合物に押し付け倣わせた 状態でその姿勢に一旦ロックし、 両被接合物を離間させ、 少なく とも一方の被接 合物の接合面をエネルギー波により洗浄した後再度両被接合物を接触させ、 加熱、 加圧、 超音波印加のいずれか少なく とも一つの方法により被接合物同士を接合す ることによって作製されたことを特徴とするものからなる。  Further, the joined body according to the present invention is a joined body of joined objects having a joint portion on the surface of a base material, and at least one of the joined objects is pressed against the other to be joined. Once locked in that position, the two workpieces are separated from each other, at least the bonded surface of one of the workpieces is cleaned with energy waves, and then the two workpieces are brought into contact again, and heated, pressurized, and ultrasonic waves applied. It is characterized by being produced by joining objects to be joined together by at least one method.
これら接合体においては、 接合された被接合物の少なく とも一方が半導体から なる構成とすることができる。  In these joined bodies, at least one of the joined objects can be made of a semiconductor.
上記のような本発明に係る接合方法および装置においては、 両被接合物のァラ ィメントまたは/およびエネルギー波による接合面洗浄前に、 少なく とも一方の 被接合物を他方の被接合物に押し付け倣わせ、 両者の平行度がほぼ完全に合わせ られ、 その状態でその姿勢に一旦ロックし、 両被接合物を離間させてから、 両被 接合物間の相対位置を所定の精度範囲内に納めるァライメント、 または/および エネルギー波による接合面洗浄が行われる。 しかる後に、 再度両被接合物が接触 され、 加熱、 加圧、 超音波印加のいずれか少なく とも一つの方法により被接合物 同士が接合される。 したがって、 倣い動作を行うときには、 接合面はエネルギー 波による洗浄や加熱は行われておらず、 接合面同士がひっつく ことはない。 倣い 動作により平行度が合わされた状態にて、 ァライメ ン トできるので、 両被接合物 間の相対位置が容易に高精度に調整され、 その状態で接合に供される。 また、 倣 い動作により両被接合物間の平行度がほぼ完全に合わされた状態にて、 エネルギ —波による接合面洗浄が行われるので、 洗浄後に表面活性化された両接合面をそ のまま接触させることにより、 極めて効率よく しかも良好な接合を行うことが可 能になる。 接合は、 単に加圧だけでも可能であり、 とくにエネルギー波により接 合面洗浄を行う場合には、 小さい接合荷重でよい。 また、 加熱や超音波印加を組 み合わせれば、 一層確実にかつ容易に接合することが可能になる。 · このように、 本発明に係る接合方法および装置によれば、 倣い動作により両被 接合物間の平行度を合わせた後一旦口ックし、 両被接合物を離間させてァライメ ント、 または/および、 エネルギー波洗浄を行い、 その後に接合するようにした ので、 倣い動作による平行度調整の利点をそのまま活かしつつ、 所定のァライメ ントゃエネルギー波による接合面の洗浄を可能とでき、 良好な接合を高精度でし かも容易に行うことができるようになる。 In the bonding method and apparatus according to the present invention as described above, at least one of the bonded objects is pressed against the other bonded object before cleaning the bonded surfaces with the alignment or / and the energy wave of the both bonded objects. Imitate, the parallelism of both is almost perfectly matched In this state, once locked in that position, the two workpieces are separated from each other, and then alignment to keep the relative position between the two workpieces within a predetermined accuracy range, and / or cleaning of the bonding surface with energy waves Done. Thereafter, the objects are brought into contact again, and the objects are joined by at least one of heating, pressurizing, and applying ultrasonic waves. Therefore, when performing the copying operation, the joining surfaces are not cleaned or heated by the energy wave, and the joining surfaces do not stick to each other. Since the alignment can be performed in a state where the parallelism is adjusted by the copying operation, the relative position between the two workpieces can be easily adjusted with high accuracy, and the workpiece can be joined in that state. In addition, since the bonding surface is cleaned by the energy-wave in a state where the parallelism between the two workpieces is almost perfectly matched by the copying operation, the two bonded surfaces activated after cleaning are left as they are. The contact makes it possible to achieve very efficient and good bonding. Bonding can be performed by simply applying pressure, and a small bonding load is sufficient especially when cleaning the bonding surface by energy waves. In addition, if heating and ultrasonic application are combined, bonding can be performed more reliably and easily. As described above, according to the joining method and the apparatus according to the present invention, after the parallelism between the two articles is adjusted by the copying operation, the two articles are once locked, and the two articles are separated from each other. And / or energy wave cleaning, and bonding is performed afterwards.While taking advantage of the parallelism adjustment by copying operation as it is, it is possible to clean the bonding surface with a predetermined alignment energy wave. The joining can be performed with high precision and easily.
図 面 の 簡 単 な 説 明  Brief explanation of drawings
図 1は、 本発明の一実施態様に係る接合装置の縦断面図である。  FIG. 1 is a longitudinal sectional view of a joining device according to one embodiment of the present invention.
図 2は、 図 1 の装置における倣い動作を示す部分概略縦断面図である。  FIG. 2 is a partial schematic longitudinal sectional view showing the copying operation in the apparatus shown in FIG.
図 3は、 図 1 の装置におけるロック動作を示す部分概略縦断面図である。  FIG. 3 is a partial schematic longitudinal sectional view showing a locking operation in the device of FIG.
図 4は、 図 1の装置におけるァライメント工程を示す部分概略正面図である。 図 5は、 図 1の装置におけるエネルギー波洗浄工程を示す部分概略縦断面図で ある。  FIG. 4 is a partial schematic front view showing an alignment step in the apparatus of FIG. FIG. 5 is a partial schematic longitudinal sectional view showing an energy wave cleaning step in the apparatus of FIG.
図 6は、 図 1の装置における接合工程を示す部分概略正面図である。  FIG. 6 is a partial schematic front view showing a joining step in the apparatus of FIG.
〔符号の説明〕 チップ [Explanation of symbols] Chips
基板 Substrate
チップの金属接合部 Chip metal joint
基板の金属接合部 Board metal joints
チップ保持手段 Chip holding means
基板保持手段 Substrate holding means
9 電極ツール 9 Electrode tool
a、 1 0 b 静電チャック用の電極端子 a、 l i b プラズマ電極甩の端子 a、 1 2 b ヒーター用の端子a. 1 3 b 電極コネクタ一 a, 10 b Electrode terminal for electrostatic chuck a, l i b Terminal for plasma electrode a a, 1 2 b Terminal for heater a. 1 3 b Electrode connector
口一カルチヤンバ  Mouth cultivation
可動壁  Movable wall
可動壁上昇ポ一ト  Movable wall rising port
可動壁下降ポート  Movable wall descending port
内部シール機構  Internal seal mechanism
シリ ンダ手段  Cylinder means
シール材  Seal material
真空ポンプ  Vacuum pump
吸引路  Suction path
ガス供給路  Gas supply path
倣い · 口ック機構  Copying · Mouth mechanism
凸球面  Convex sphere
球面部材  Spherical member
凹球面  Concave sphere
受け部材  Receiving member
エアフローティ ング機構  Air floating mechanism
シリ ンダ 3 1 ピス トン Cylinder 3 1 Piston
3 2 ロックポ一ト  3 2 Lock port
3 3 フ リ一ポート  3 3 Free port
4 0 認識手段  4 0 Recognition method
発 明 を 実施 す る た め の最 良 の 形態  Best mode for carrying out the invention
以下に、 本発明の望ましい実施の形態を、 図面を参照しながら説明する。  Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings.
図 1は、 本発明の一実施態様に係る接合装置 1 を示している。 本実施態様にお いては、 互いに接合される被接合物として、 一方はチップ 2で他方は基板 3であ る場合を例示している。 チップ 2上には電極を構成する複数の金属接合部 4 (図 1には 2つ示してある） が設けられており、 基板 3には対応する電極を構成する 金属接合部 5が設けられている。 チップ 2は一方の被接合物保持手段としてのチ ップ保持手段 6に保持されており、 基板 3は他方の被接合物保持手段としての基 板保持手段 7に保持されている。 本実施態様では、 チップ保持手段 6は Z方向 (上下方向） に位置調整できるようになつており、 基板保持手段 7は X、 Y方向 (水平方向） および/または回転方向 （ 0方向） に位置調整できるようになって いる。  FIG. 1 shows a joining apparatus 1 according to one embodiment of the present invention. In the present embodiment, a case where one of the substrates is a chip 2 and the other is a substrate 3 is illustrated as an example of the objects to be bonded to each other. A plurality of metal joints 4 (two shown in FIG. 1) constituting the electrodes are provided on the chip 2, and a metal joint 5 constituting the corresponding electrodes is provided on the substrate 3. I have. The chip 2 is held by a chip holding means 6 as one of the objects to be bonded, and the substrate 3 is held by a substrate holding means 7 as the other object to be bonded. In the present embodiment, the position of the chip holding means 6 can be adjusted in the Z direction (vertical direction), and the position of the substrate holding means 7 can be adjusted in the X and Y directions (horizontal direction) and / or the rotation direction (0 direction). It can be adjusted.
上記のような基板保持手段 7は、'一般には、 平行移動および/または回転可能 に装着されるが、 必要に応じて、 それらと昇降 （Z方向移動） とを組み合わせた 態様に装着してもよい。 また、 チップ保持手段 6側についても、 昇降動作のみな らず、 平行移動および/または回転動作を行うことができる装置形態であっても よい。  The substrate holding means 7 as described above is generally mounted so as to be capable of translation and / or rotation. However, if necessary, the substrate holding means 7 may be mounted in a mode in which they are combined with elevation (movement in the Z direction). Good. Further, the chip holding means 6 may be configured to perform not only the elevating operation but also the parallel moving and / or rotating operation.
なお、 上記において、 チップ 2 とは、 たとえば、 I Cチップ、 半導体チップ、 光素子、 表面実装部品、 ウェハ一など、 種類や大きさに関係なく、 基板 3 と接合 させる側の全てのものをいう。 また、 基板 3 とは、 たとえば、 樹脂基板、 ガラス 基板、 フィルム基板、 チップ、 ウェハ一など、 種類や大きさに関係なく、 チップ 2 と接合される側の全てのものをいう。  Note that, in the above description, the chip 2 means, for example, an IC chip, a semiconductor chip, an optical element, a surface mount component, a wafer, and the like, regardless of the type or size, on the side to be bonded to the substrate 3. In addition, the substrate 3 means, for example, a resin substrate, a glass substrate, a film substrate, a chip, a wafer, and the like, irrespective of the type and size, all of the side bonded to the chip 2.
本実施態様では、 チップ保持手段 6において直接チップ 2を保持する部分、 お よび、 基板保持手段 7において直接基板 3を保持する部分は、 電極ツール 8、 9 に構成されており、 それぞれプラズマ発生用電極として機能可能に構成されてい る。 本実施態様では、 これら電極ツール 8、 9の一方に R Fプラズマ発生用電源 (図示略） が接続されており選択切替が可能となっている。 また、 チャンバ壁 1 5 (可動壁） が接地されている。 R Fプラズマ発生用電源から、 たとえば減圧条 件下にて所定の高周波電圧が印加されることにより、 電極ツール 8、 9間でチッ プ 2の金属接合部 4の表面および基板 3の金属接合部 5の表面に電極を切り替え ることにより洗浄用のプラズマを照射することができるようになつている。 プラズマ電極の構成は、 上下どちらかの電極をアノード · アースとして切り替 えることにより両面洗浄する方法と、 チヤンバ壁をアースとして上下どちらかの 電極を力ソードとして切り替えて両面洗浄する方法とがある。 In the present embodiment, the part for directly holding the chip 2 in the chip holding means 6 and the part for directly holding the substrate 3 in the substrate holding means 7 are constituted by electrode tools 8 and 9, respectively, for plasma generation. Is configured to function as an electrode You. In the present embodiment, a power supply (not shown) for generating an RF plasma is connected to one of the electrode tools 8 and 9 so that selection can be switched. The chamber wall 15 (movable wall) is grounded. When a predetermined high-frequency voltage is applied from an RF plasma generation power source, for example, under a reduced pressure condition, the surface of the metal joint 4 of the chip 2 and the metal joint 5 of the substrate 3 are interposed between the electrode tools 8 and 9. By switching electrodes on the surface of the substrate, plasma for cleaning can be irradiated. The configuration of the plasma electrode includes a method of cleaning both surfaces by switching one of the upper and lower electrodes as an anode and a ground, and a method of cleaning both surfaces by switching the upper or lower electrode as a force source with the chamber wall being grounded.
チップ保持手段 6および基板保持手段 7には、 ヒータ一が内蔵されて少なく と も一方の電極ツールを介して被接合物を加熱可能となっており、 かつ、 静電チヤ ック手段を備え少なく とも一方の被接合物を静電気的に保持することができるよ うになつている。 ヒーターおよび静電チヤック手段については図示を省略してあ る。 図 1における 1 0 aは基板保持手段 7側に内蔵された静電チヤ -ック用の電極 端子、 1 1 aはプラズマ電極用の端子、 1 2 aはヒータ一用の端子をそれぞれ示 しており、 電極コネクタ一 1 3 aを介して給電されるようになつている。 パター ンとしては、 表層から静電チャック、 プラズマ電極、 ヒータ一となっていること が好ましい。 同様に、 1 0 bはチップ保持手段 6側に内蔵された静電チャック用 の電極端子、 1 1 bはプラズマ電極用の端子、 1 2 bはヒーター用の端子、 1 3 bは給電用の電極コネクターを、 それぞれ示している。  The chip holding means 6 and the substrate holding means 7 have a built-in heater so that the object to be bonded can be heated via at least one of the electrode tools. In addition, one of the objects can be electrostatically held. The illustration of the heater and the electrostatic chuck means is omitted. In FIG. 1, reference numeral 10a denotes an electrode terminal for an electrostatic chuck built in the substrate holding means 7 side, 11a denotes a terminal for a plasma electrode, and 12a denotes a terminal for a heater. The power is supplied via the electrode connector 13a. It is preferable that the pattern is from the surface layer to the electrostatic chuck, the plasma electrode, and the heater. Similarly, 10 b is an electrode terminal for an electrostatic chuck built in the chip holding means 6 side, 11 b is a terminal for a plasma electrode, 12 b is a terminal for a heater, and 13 b is a power supply terminal. Electrode connectors are indicated respectively.
本実施態様.では、 両被接合物 2、 3の周囲には、 一方の被接合物保持手段 （本 実施態様では基板保持手段 7 ) に当接するまで移動して内部に両被接合物 2、 3 を閉じ込める局部的な密閉空間を持つ口一カルチヤンバ構造 （図 1 に 2点鎖線に てローカルチャンバ 1 4を示す。 ） を形成することが可能で、 かつ、 上記当接状 態にて、 前記被接合物保持手段 （本実施態様ではチップ保持手段 6 ) の移動に追 従してローカルチャンバ 1 4の容積を縮小する方向 （本実施態様では下降方向へ の移動） に移動可能な可動壁 1 5が設けられている。 この可動壁 1 5は、 筒状の 剛体壁構造に構成されており、 可動壁上昇ポート 1 6、 可動壁下降ポート 1 7お よび内部シール機構 1 8を備えたシリンダ手段 1 9により、 図 1の上下方向に移 動可能となっている。 可動壁 1 5の先端部には、 弾性変形可能なシール材 2 0が 設けられており、 上記当接状態にて、 口一カルチャンパ 1 4内部を外部に対して より確実にシール、 密閉することができるようになっている。 In the present embodiment, the two workpieces 2 and 3 are moved around the two workpieces 2 and 3 until they come into contact with one of the workpiece holding means (in this embodiment, the substrate holding means 7), and are internally moved. And a local chamber 14 (a local chamber 14 is shown by a two-dot chain line in FIG. 1) having a local closed space for confining the space 3. The movable wall 1 that can move in the direction of reducing the volume of the local chamber 14 (moving in the downward direction in the present embodiment) following the movement of the article holding means (the chip holding means 6 in the present embodiment). 5 are provided. The movable wall 15 is formed into a cylindrical rigid wall structure. The movable wall ascending port 16, the movable wall descending port 17, and a cylinder means 19 having an internal sealing mechanism 18 are used as shown in FIG. Up and down It is possible to move. An elastically deformable sealing material 20 is provided at the tip of the movable wall 15 to more securely seal and seal the inside of the mouth-to-chamber 14 to the outside in the above-mentioned contact state. Can be done.
基板保持手段 7側には、 上記のように形成されるローカルチャンバ 1 4に対し、 該ローカルチャンバ 1 4内を減圧して所定の真空状態にする真空吸引手段として の真空ポンプ 2 1 が接続されている。 ローカルチャンバ 1 4内の空気あるいはガ スは、 吸引路 2 2を通して真空ポンプ 2 1により吸引される。 また、 この吸引路 2 2 とは別に、 あるいはこの吸引路 2 2と兼用させて、 基板保持手段 7側にはァ ルゴンガス （A rガス） などの特定の不活性ガスをローカルチャンバ 1 4内に供 給するガス供給路 2 3が設けられている。  A vacuum pump 21 is connected to the substrate holding means 7 as a vacuum suction means for reducing the pressure in the local chamber 14 to a predetermined vacuum state with respect to the local chamber 14 formed as described above. ing. The air or gas in the local chamber 14 is sucked by the vacuum pump 21 through the suction passage 22. Separately from the suction path 22 or used as the suction path 22, a specific inert gas such as argon gas (Ar gas) is supplied into the local chamber 14 on the substrate holding means 7 side. A gas supply path 23 to be supplied is provided.
基板保持手段 7の下部側には、 倣い · ロック機構 2 4が設けられている。 倣い • ロック機構 2 4は、 基板保持手段 7の下面側に固定された、 凸球面 2 5を有す る球面部材 2 6 と、 該球面部材 2 6を受ける凹球面 2 7を有する受け部材 2 8を 備えている。 球面部材 2 6は、 エアフローティング機構 2 9を介して、 その凸球 - 面 2 5が受け部材 1 8の凹球面 2 7に沿って自在に動くことができるようになつ ており、 この動きによって、 基板 3 とチップ 2が当接された際に、 両者間の平行 度が自動的にほぼ完全に合うようになつている。  A copy / lock mechanism 24 is provided below the substrate holding means 7. Copying • The lock mechanism 24 includes a spherical member 26 having a convex spherical surface 25 fixed to the lower surface side of the substrate holding means 7 and a receiving member 2 having a concave spherical surface 27 receiving the spherical member 26. 8 are provided. The spherical member 26 can be freely moved along the concave spherical surface 27 of the receiving member 18 through the air floating mechanism 29 so that the convex sphere-surface 25 can move freely. When the substrate 3 and the chip 2 come into contact with each other, the parallelism between the two automatically becomes almost perfectly matched.
また、 倣い · 口ック機構 2 4におけるロック機構は次のように構成されている。 すなわち、 球面部材 2 6 と受け部材 2 8とにわたって、 シリンダ 3 0とその中に 収容されたピス ト ン 3 1が設けられており、 このエアシリンダ機構のロッ クポー ト 3 にエアを供給することによりピス トン 3 1が下方に移動されて、 ビストン 3 1 を介し受け部材 8に対して球面部材 2 6の位置、 姿勢が口ックされるよう になっているとともに、 フリーポート 3 3にエアを供給することによりピストン 3 1が上方に移動されて、 口ックが解除され球面部材 2 6が受け部材 2 8に対し て自由に倣わされるようになつている。  The lock mechanism of the copying / mouthing mechanism 24 is configured as follows. That is, a cylinder 30 and a piston 31 housed therein are provided over the spherical member 26 and the receiving member 28, and air is supplied to the lock port 3 of the air cylinder mechanism. As a result, the piston 31 is moved downward, so that the position and the posture of the spherical member 26 are locked with respect to the receiving member 8 via the piston 3 1, and air is supplied to the free port 33. Is supplied, the piston 31 is moved upward, the lip is released, and the spherical member 26 is freely copied with respect to the receiving member 28.
なお、 上記実施態様では、 接合に関して、 チップ保持手段 6を下方に移動させ て所定の接合荷重を加える機構、 および、 チップ保持手段 6や基板保持手段 7に 内蔵された、 図示されていないヒータにより加熱する機構について説明したが、 これらに加えて、 あるいはこれらに代えて、 とくにヒータに代えて、 超音波印加 手段を設けることも可能である。 In the above embodiment, regarding the bonding, a mechanism for moving the chip holding means 6 downward to apply a predetermined bonding load, and a heater (not shown) built in the chip holding means 6 and the substrate holding means 7 The heating mechanism has been described, but in addition to or instead of these, in particular, instead of heaters, It is also possible to provide means.
このように構成された接合装置 1 を用いて、 本発明に係る接合方法は次のよう に実施することができる。  Using the bonding apparatus 1 configured as described above, the bonding method according to the present invention can be performed as follows.
まず、 図 2に示すように、 倣い · 口ック機構 2 4におけるフリ一ポート 3 3に エアを供給して球面部材 2 6を受け部材 2 8に対して自由状態とし、 この状態に てチップ保持手段 6を下降させてチップ 2を基板 3に、 とくにチップ 2の金属接 合部 4を基板 3 の金属接合部 5に押し付け、 倣い · ロック機構 2 4により基板 3 がチップ 2に倣うように、 つまり、 基板 3 とチップ 2間の平行度がほぼ完全に合 うように倣わせられる。 このとき、 事前にチップ 2 と基板 3 との相対位置を仮ァ ライメントしておく と、 チップ 2の金属接合部 4 と基板 3の金属接合部 5 とが所 定の相対位置関係にて精度よく当接することができる。  First, as shown in FIG. 2, air is supplied to the free port 33 of the copying mechanism 24, and the spherical member 26 is set in a free state with respect to the receiving member 28. By lowering the holding means 6, the chip 2 is pressed against the substrate 3, in particular, the metal joint 4 of the chip 2 is pressed against the metal joint 5 of the substrate 3, so that the substrate 3 follows the chip 2 by the copying mechanism 2 4. That is, the parallelism between the substrate 3 and the chip 2 is almost completely matched. At this time, if the relative positions of the chip 2 and the substrate 3 are provisionally aligned in advance, the metal joints 4 of the chip 2 and the metal joints 5 of the substrate 3 can be accurately adjusted in a predetermined relative positional relationship. Can abut.
上記倣い動作後に、 図 3に示すように、 ロックポート 3 2にエアが供給され、 上記平行度が調整された状態にて、 球面部材 2 6が受け部材 2 8に対して一旦口 ックされる。 球面部材 2 6は基板保持手段 7を介して基板 3 と一定の位置関係に 保持されているから、 球面部材 2 6のロックにより、 チップ 2 と基板 3間の平行 度も調整された状態に維持されることになる。  After the above copying operation, as shown in FIG. 3, air is supplied to the lock port 32, and the spherical member 26 is once locked to the receiving member 28 with the parallelism adjusted. You. Since the spherical member 26 is held in a fixed positional relationship with the substrate 3 via the substrate holding means 7, the state of parallelism between the chip 2 and the substrate 3 is also maintained by locking the spherical member 26. Will be done.
上記ロック後に、 チップ保持手段 6が上昇され、 チップ 2 と基板 3が、 平行度 が合った状態にて離間される。 離間後に、 図 4に示すようなァライメ ン'ト、 また は、 図 5に示すようなエネルギー波 （プラズマ） による接合面の洗浄、 あるいは これら両方が行われる。 これらの両方を行う場合、 エネルギー波洗浄は、 ァライ メント前後のいずれでも行うことが可能である。  After the above locking, the chip holding means 6 is raised, and the chip 2 and the substrate 3 are separated from each other with the parallelism being matched. After the separation, alignment is performed as shown in FIG. 4 and / or the bonding surface is cleaned with energy waves (plasma) as shown in FIG. 5, or both. When performing both of these, the energy wave cleaning can be performed before or after the alignment.
ァライメントは、 たとえば図 4に示すように、 離間されたチップ 2と基板 3の 間に上下 2視野を有する認識手段 4 0 (たとえば、 2視野カメラ） を挿入し、 た とえばチップ 2 と基板 3のそれぞれに付されたァライメントマ一クを読み取り、 その読み取り上方に基づいて両者間の相対位置を微調整することにより行われる。 両者間の平行度は上述の倣い動作により既に合わされているので、 基板 3側を X、 Y、 0方向に微調整すれば済む。 上記 2視野の認識手段 4 0は、 たとえば本接合 装置全体を真空チャンバにて囲むような場合には、 真空領域内で作動させること が困難になるので、 そのような場合には、 たとえば下方や上方から、 赤外線等の 透過可能な測定波によりチップ 2 と基板 3のァライメントマークの両方を一方向 から読み取り可能な認識手段 （たとえば、 赤外線カメラ） を用いればよい。 エネルギー波 （本実施態様ではプラズマ） による洗浄は、 たとえば図 5に示す ように行われる。 可動壁下降ポート 1 7にエアを供給することにより可動壁 1 5 が下降されてその先端部のシール材 2 0が基板保持手段 7の上面に当接され、 良 好にシールされ実質的に密閉空間からなるローカルチャンバ 1 4が形成される。 本実施態様では、 ガス供給路 2 3を通して口一カルチャンバ 1 4内に A rガスが 供給され、 吸引路 2 2を通しての吸引により、 ローカルチヤンバ 1 4内が所定の 真空度に減圧される。 そして、 電極ツール 8、 9間でプラズマが発生され、 チッ プ 2の金属接合部 4の表面および基板 3の金属接合部 5の表面、 つまり各接合面 がブラズマによって洗浄され、 表面が接合に適した表面活性化状態とされる。 なお、 上記プラズマ洗浄においては、 接合表面の表面異物層を除去し十分に表 面活性化するために、 金属接合部の接合される全表面で 1 n m以上エッチングで きるようにプラズマ強度、 時間を設定することが好ましい。 For example, as shown in FIG. 4, the alignment means inserts a recognition means 40 (for example, a two-view camera) having two upper and lower fields of view between the chip 2 and the substrate 3 which are separated from each other. The reading is performed by reading the alignment marks attached to each of the above, and finely adjusting the relative position between the two based on the read upper side. Since the parallelism between the two has already been adjusted by the above-described copying operation, it is sufficient to finely adjust the substrate 3 side in the X, Y, and 0 directions. For example, when the entire joining apparatus is surrounded by a vacuum chamber, it is difficult to operate the two-field recognition means 40 in a vacuum region. From above, infrared Recognition means (for example, an infrared camera) that can read both the alignment mark of the chip 2 and the alignment mark of the substrate 3 from the measurement wave that can be transmitted may be used. Cleaning with an energy wave (plasma in this embodiment) is performed, for example, as shown in FIG. By supplying air to the movable wall lowering port 17, the movable wall 15 is lowered, and the sealing material 20 at the tip thereof abuts on the upper surface of the substrate holding means 7, and is sealed well and substantially sealed. A local chamber 14 consisting of a space is formed. In this embodiment, Ar gas is supplied into the oral chamber 14 through the gas supply path 23, and the pressure in the local chamber 14 is reduced to a predetermined degree of vacuum by suction through the suction path 22. Then, plasma is generated between the electrode tools 8 and 9, and the surface of the metal joint 4 of the chip 2 and the surface of the metal joint 5 of the substrate 3, that is, each joint surface is cleaned by plasma, and the surface is suitable for joining. Surface activated state. In the above-mentioned plasma cleaning, in order to remove the surface foreign material layer on the bonding surface and sufficiently activate the surface, the plasma intensity and time are set so that the entire surface to be bonded of the metal bonding portion can be etched by 1 nm or more. It is preferable to set.
このエネルギー波 （プラズマ） による洗浄と図 4に示したァライメントの両方 を行う場合には、 エネルギー波洗浄はァライメ ン トの前または後のいずれで行つ てもよい。  When performing both the energy wave (plasma) cleaning and the alignment shown in FIG. 4, the energy wave cleaning may be performed before or after the alignment.
ァライメント後、 またはエネルギー波洗浄後、 あるいはァライメントとェネル ギ一波洗浄の両方を行った後、 図 6に示すように、 チップ保持手段 6を下降させ てチップ 2の金属接合部 4 と基板 3の金属接合部 5が互いに接合される。 このと き、 接合に必要な接合荷重が加えられる。 ただし、 エネルギー波洗浄を行ってい る場合には、 極めて小さな接合荷重で良好な接合が可能となる。 また、 この条件 下では、 常温接合まで可能となる。 また、 接合の際にヒータにより加熱すれば、 より接合が容易になる。 さらに、 ヒータ加熱に代えてあるいはそれとともに、 超 音波を印加えれば、 一層容易に接合できる。  After the alignment, or after the energy wave cleaning, or after both the alignment and the energy single-wave cleaning, as shown in FIG. 6, the chip holding means 6 is lowered so that the metal bonding portion 4 of the chip 2 and the substrate 3 are separated. The metal joints 5 are joined together. At this time, a joining load necessary for joining is applied. However, when energy wave cleaning is performed, good bonding can be achieved with an extremely small bonding load. Under these conditions, bonding to room temperature is possible. In addition, if heating is performed by a heater at the time of joining, joining becomes easier. Further, if ultrasonic waves are applied instead of or in addition to the heater heating, bonding can be more easily performed.
この接合は、 大気中で行うことも可能であり、 大気圧下で行うことも可能であ る。 また、 上記口一カルチャンバ 1 4の可動壁 1 5は上下に可動できるので、 接 合時にも実質的に密閉空間からなるローカルチャンバ 1 4形態を維持することが 可能であるので、 減圧下で接合を行うこともでき、 さらには不活性ガス雰囲気下 で接合を行うこともできる。 減圧下や不活性ガス雰囲気下での接合を行うことに より、 より不純物の少ない状態での接合が可能になる。 This bonding can be performed in air or at atmospheric pressure. In addition, since the movable wall 15 of the oral chamber 14 can be moved up and down, it is possible to maintain the form of the local chamber 14 consisting of a substantially closed space even at the time of joining. Can be performed, and further under an inert gas atmosphere. Can also be joined. By performing bonding under reduced pressure or in an inert gas atmosphere, bonding with less impurities can be performed.
このように、 倣い動作により両被接合物間の平行度を合わせた後離間させ、 ァ ライメ ント、 または/および、 エネルギー波洗浄を行った後に接合することによ り、 平行度調整を問題を発生させることなく行うことができるとともに、 良好に 平行度が調整された状態で、 接合工程へと至らしめることが可能になり、 望まし い条件下での接合が可能になる。  As described above, by adjusting the parallelism between the two workpieces by the copying operation and then separating them, and after performing alignment and / or energy wave cleaning, the parallelism adjustment is a problem. This can be performed without causing the occurrence, and the joining process can be performed in a state where the parallelism is well adjusted, and the joining can be performed under desirable conditions.
なお、 本実施態様ではチップと基板を示したが、 電極のないチップ同士ゃゥェ ハ一同士の接合にも本発明は適用でき、 上下被接合物が金属以外の半導体ゃガラ ス、 セラミツク等の異種材料である場合もある。 また、 ァライメントマ一クが無 い場合には、 外形でァライメン卜する場合もある。  In this embodiment, the chip and the substrate are shown. However, the present invention can also be applied to the bonding of chips without electrodes to wafers, and the upper and lower objects to be bonded are semiconductors other than metal, glass, ceramics, and the like. In some cases. If there is no alignment mark, the external shape may be used.
産 業 上 の 利 用 可 能 性  Industrial availability
本発明に係る接合装置および方法は、 金属接合部を有する被接合物同士のあら ゆる接合に適用でき、 とくに少なく とも一方の被接合物が半導体である場合の接 合に好適である。  INDUSTRIAL APPLICABILITY The joining apparatus and method according to the present invention can be applied to all kinds of joining between objects to be joined having a metal joint, and are particularly suitable for joining when at least one of the objects to be joined is a semiconductor.

Claims

言青 求 の 範 囲 Scope of demand
I . 基材の表面に接合部を有する被接合物同士を接合するに際し、 少なく とも一 方の被接合物を他方の被接合物に押し付け倣わせた状態でその姿勢に一旦ロック ' し、 両被接合物を離間させ、 両被接合物間の相対位置を所定の精度範囲内にァラ ィメ ン トした後再度両被接合物を接触させ、 加熱、 加圧、 超音波印加のいずれか 少なく とも一つの方法により被接合物同士を接合することを特徴とする接合方法。  I. When joining objects having a joint on the surface of the base material, at least one of the objects is pressed against the other object and locked in that position once. After separating the workpieces, aligning the relative positions between the workpieces within the specified accuracy range, contact the workpieces again, and apply any of heating, pressurization, or ultrasonic application. A joining method characterized by joining objects to be joined by at least one method.
2 . 前記倣い動作後、 前記ァライメント前または後に、 少なく とも一方の被接合 物の接合面をエネルギー波により洗浄する、 請求項 1の接合方法。 2. The bonding method according to claim 1, wherein after the copying operation, before or after the alignment, at least a bonding surface of one of the objects is cleaned by an energy wave.
3 . 前記倣い動作を仮ァライメントした後に行う、 請求項 1 の接合方法。 3. The joining method according to claim 1, wherein the copying operation is performed after provisional alignment.
4 . 前記接合部が金属である、 請求項 1 の接合方法。 4. The bonding method according to claim 1, wherein the bonding portion is a metal.
5 . 前記接合を減圧下で行う、 請求項 1の接合方法。 5. The bonding method according to claim 1, wherein the bonding is performed under reduced pressure.
6 . 前記接合を不活性ガス雰囲気下で行う、 請求項 1 の接合方法。 6. The bonding method according to claim 1, wherein the bonding is performed in an inert gas atmosphere.
7 - 前記エネルギー波としてプラズマを用いる、 請求項 2の接合方法。 7-The bonding method according to claim 2, wherein plasma is used as the energy wave.
8 . 前記エネルギー波として A rプラズマを用いる、 請求項 7の接合方法。 8. The bonding method according to claim 7, wherein an Ar plasma is used as the energy wave.
9 . 前記エネルギー波による洗浄により、 前記接合部の接合される全表面で 1 n m以上の深さにエッチングする、 請求項 2の接合方法。 9. The bonding method according to claim 2, wherein the entire surface of the bonding portion to be bonded is etched to a depth of 1 nm or more by the cleaning with the energy wave.
1 0 . 接合面が金、 銅、 A 1、 I n、 S nのいずれかにより構成されている接合 部同士を接合する、 請求項 1 の接合方法。 10. The joining method according to claim 1, wherein the joining portions are joined to each other, the joining portions each being made of one of gold, copper, A1, In, and Sn.
I I . 少なく とも一方の接合部の表面硬度をビッカース硬度 H vで 1 2 0以下に する、 請求項 1 の接合方法。 II. Reduce the surface hardness of at least one joint to 120 or less in Vickers hardness Hv The bonding method according to claim 1,
1 2 . 基材の表面に接合部を有する被接合物同士を接合するに際し、 少なく とも 一方の被接合物を他方の被接合物に押し付け倣わせた状態でその姿勢に一旦ロッ クし、 両被接合物を離間させ、 少なく とも一方の被接合物の接合面をエネルギー 波により洗浄した後再度両被接合物を接触させ、 加熱、 加圧、 超音波印加のいず れか少なく とも一つの方法により被接合物同士を接合することを特徴とする接合 方法。 1 3 . 前記倣い動作を仮ァライメ ン トした後に行う、 請求項 1 2の接合方法。 1 2. When joining objects to be joined having a joint on the surface of the base material, at least one object is pressed against the other object and locked once in that position. The workpieces are separated from each other, and at least one of the workpieces is cleaned by an energy wave, and then the workpieces are brought into contact again.At least one of heating, pressurizing, and ultrasonic application is performed. A joining method characterized by joining objects to be joined by a method. 13. The joining method according to claim 12, wherein the copying operation is performed after provisional alignment.
1 4 . 前記接合部が金属である、 請求項 1 2の接合方法。 14. The joining method according to claim 12, wherein the joining portion is a metal.
1 5 . 前記接合を減圧下で行う、 請求項 1 2の接合方法。 15. The bonding method according to claim 12, wherein the bonding is performed under reduced pressure.
1 6 . 前記接合を不活性ガス雰囲気下で行う、 請求項 1 2の接合方法。 16. The bonding method according to claim 12, wherein the bonding is performed in an inert gas atmosphere.
1 7 . 前記エネルギー波としてプラズマを用いる、 請求項 1 2の接合方法。 1 8 . 前記エネルギー波として A rプラズマを用いる、 請求項 1 7の接合方法。 17. The bonding method according to claim 12, wherein plasma is used as the energy wave. 18. The bonding method according to claim 17, wherein Ar plasma is used as the energy wave.
1 9 . 前記エネルギー波による洗浄により、 前記接合部の接合される全表面で 1 n m以上の深さにエッチングする、 請求項 1 2の接合方法。 2 0 . 接合面が金、 銅、 A 1、 I n、 S nのいずれかにより構成されている接合 部同士を接合する、 請求項 1 2の接合方法。 1 . 少なく とも一方の接合部の表面硬度をビッカース硬度 H Vで 1 1 0以下に する、 請求項 1 2の接合方法。 19. The bonding method according to claim 12, wherein the entire surface of the bonding portion to be bonded is etched to a depth of 1 nm or more by the cleaning with the energy wave. 20. The bonding method according to claim 12, wherein the bonding portions are bonded to each other, wherein the bonding surfaces are made of any of gold, copper, A1, In, and Sn. 1. The joining method according to claim 12, wherein at least one of the joints has a surface hardness of 110 or less in Vickers hardness HV.
2 2 . 基材の表面に接合部を有する被接合物同士を接合する装置であって、 少な く とも一方の被接合物を他方の被接合物に押し付け倣わせた状態でその姿勢に一 旦ロックする倣い · ロック機構と、 ロック状態で離間された両被接合物間の相対 位置を所定の精度範囲内に調整するァライメ ン ト機構と、 ァライメ ン ト後の両被 接合物を再度接触させ、 加熱、 加圧、 超音波印加のいずれか少なく とも一つの手 段を備えた接合手段とを有することを特徴とする接合装置。 22. A device for joining objects to be joined having a joint on the surface of the base material, and at least one object is pressed against the other object and at least once in that position. The scanning mechanism to be locked ・ The alignment mechanism that adjusts the relative position between the two workpieces separated in the locked state within a predetermined accuracy range, and the two workpieces after the alignment are brought into contact again. A joining device comprising at least one of heating, pressurizing, and ultrasonic application.
2 3 . 前記倣い · 口ック機構による倣い動作後、 前記ァライメント機構によるァ ライメ ン ト前または後に、 少なく とも一方の被接合物の接合面をエネルギー波に より洗浄する手段を有する、 請求項 2 2の接合装置。 23. A means for cleaning at least one joint surface of an object to be joined by an energy wave after the copying operation by the copying mechanism and before or after the alignment by the alignment mechanism. 2 2 joining equipment.
2 4 . 前記倣い動作前に仮ァライメン卜を行う仮ァライメント機構を有する、 請 求項 2 2の接合装置。 24. The joining apparatus according to claim 22, further comprising a temporary alignment mechanism for performing a temporary alignment before the copying operation.
2 5 . 前記接合部が金属である、 請求項 2 2の接合装置。 25. The joining device according to claim 22, wherein the joining portion is a metal.
2 6 . 前記接合手段が減圧手段を備えている、 請求項 2 2の接合装置。 2 7 . 前記接合手段が不活性ガス供給手段を備えている、 請求項 2 2の接合装置。 26. The joining apparatus according to claim 22, wherein the joining means includes a pressure reducing means. 27. The joining apparatus according to claim 22, wherein the joining means includes an inert gas supply means.
2 8 . 前記エネルギー波洗浄手段がプラズマ照射手段からなる、 請求項 2 3の接 合装置。 2 9 . 前記ブラズマ照射手段が A rプラズマ照射手段からなる、 請求項 1 8の接 合装置。 28. The joining apparatus according to claim 23, wherein said energy wave cleaning means comprises a plasma irradiation means. 29. The joining apparatus according to claim 18, wherein the plasma irradiation means comprises an Ar plasma irradiation means.
3 0 . 前記エネルギー波洗浄手段が、 前記接合部の接合される全表面で 1 n m以 上の深さのエッチングが可能な手段からなる、 請求項 2 2の接合装置。 1 30. The bonding apparatus according to claim 22, wherein said energy wave cleaning means comprises means capable of etching at a depth of 1 nm or more over the entire surface of said bonding portion to be bonded. One
3 1 . 接合される接合部の接合面が金、 銅、 A 1、 I n、 S nのいずれかにより 構成されている、 請求項 2 2の接合装置。 3 2 . 少なく とも一方の接合部の表面硬度をピツカ一ス硬度 H vで 1 2 0以下と されている、 請求項 2 2の接合装置。 31. The joining apparatus according to claim 22, wherein the joining surface of the joining portion to be joined is made of one of gold, copper, A1, In, and Sn. 32. The joining apparatus according to claim 22, wherein at least one of the joints has a surface hardness of 120 or less in a picker hardness Hv.
3 3 . 基材の表面に接合部を有する被接合物同士を接合する装置であって、 少な くとも一方の被接合物を他方の被接合物に押し付け倣わせた状態でその姿勢に一 旦ロックする倣い · ロック機構と、 ロック状態で離間された両被接合物の少なく とも一方の被接合物の接合面をエネルギー波により洗浄する手段と、 洗浄後再度 両被接合物を接触させ、 加熱、 加圧、 超音波印加のいずれか少なく とも一つの手 段を備えた接合手段とを有することを特徴とする接合装置。 3 4 . 前記倣い動作前に仮ァライメントを行う仮ァライメント機構を有する、 請 求項 3 3の接合装置。 33. A device for joining objects to be joined having a joint on the surface of a base material, and at least one object is pressed against the other object and at least once in that position. Scanning to lock · Lock mechanism, means for cleaning at least one of the bonded surfaces of both bonded objects separated in the locked state by an energy wave, and after cleaning, bringing both bonded objects into contact again and heating A joining device having at least one means of at least one of pressurization and ultrasonic application. 34. The joining apparatus according to claim 33, further comprising a temporary alignment mechanism for performing a temporary alignment before the copying operation.
3 5 . 前記接合部が金属である、 請求項 3 3の接合装置。 3 6 . 前記接合手段が減圧手段を備えている、 請求項 3 3の接合装置。 35. The joining device according to claim 33, wherein the joining portion is a metal. 36. The joining apparatus according to claim 33, wherein the joining means includes a pressure reducing means.
3 7 . 前記接合手段が不活性ガス供給手段を備えている、 請求項 3 3の接合装置。 37. The joining apparatus according to claim 33, wherein the joining means includes an inert gas supply means.
3 8 . 前記エネルギー波洗浄手段がプラズマ照射手段からなる、 請求項 3 3の接 合装置。 38. The joining apparatus according to claim 33, wherein said energy wave cleaning means comprises plasma irradiation means.
3 9 . 前記プラズマ照射手段が A rプラズマ照射手段からなる、 請求項 3 8の接 合装置。 39. The joining apparatus according to claim 38, wherein said plasma irradiation means comprises Ar plasma irradiation means.
4 0 . 前記エネルギー波洗浄手段が、 前記接合部の接合される全表面で 1 n m以 上の深さのエッチングが可能な手段からなる、 請求項 3 3の接合装置。 40. The bonding apparatus according to claim 33, wherein said energy wave cleaning means comprises means capable of etching to a depth of 1 nm or more on the entire surface of said bonding portion to be bonded.
4 1 . 接合される接合部の接合面が金、 銅、 A l、 I n、 S nのいずれかにより 構成されている、 請求項 3 3の接合装置。 41. The joining apparatus according to claim 33, wherein the joining surface of the joining portion to be joined is made of one of gold, copper, Al, In, and Sn.
4 2 . 少なく とも一方の接合部の表面硬度をピッカース硬度 H Vで 1 2 0以下と されている、 請求項 3 3の接合装置。 4 3 . 基材の表面に接合部を有する被接合物同士の接合体であって、 少なく とも 一方の被接合物を他方の被接合物に押し付け倣わせた状態でその姿勢に一旦ロッ クし、 両被接合物を離間させ、 両被接合物間の相対位置を所定の精度範囲内にァ ライメ ン トした後再度両被接合物を接触させ、 加熱、 加圧、 超音波印加のいずれ か少なく とも一つの方法により被接合物同士を接合することによって作製された ことを特徴とする接合体。 42. The bonding apparatus according to claim 33, wherein at least one of the bonding portions has a surface hardness of 120 or less in Pickers hardness HV. 4 3. This is a joined body of objects to be joined having a joint on the surface of the base material. At least one object is pressed against the other object and locked in that position once. Then, the two objects are separated from each other, the relative position between the two objects is aligned within a predetermined accuracy range, and then the two objects are brought into contact again, and any one of heating, pressurizing, and ultrasonic application is performed. A joined body produced by joining objects to be joined together by at least one method.
4 4 . 前記接合された被接合物の少なく とも一方が半導体からなる、 請求項 4 3 の接合体。 4 5 . 基材の表面に接合部を有する被接合物同士の接合体であって、 少なく とも 一方の被接合物を他方の被接合物に押し付け倣わせた状態でその姿勢に一旦ロッ クし、 両被接合物を離間させ、 少なく とも一方の被接合物の接合面をエネルギー 波により洗浄した後再度両被接合物を接触させ、 加熱、 加圧、 超音波印加のいず れか少なく とも一つの方法により被接合物同士を接合することによって作製され たことを特徴とする接合体。 44. The joined body according to claim 43, wherein at least one of the joined objects is made of a semiconductor. 45. This is a joint between objects to be joined having a joint on the surface of the base material. At least one object is pressed against the other object and locked in that position once. Then, the two workpieces are separated from each other, and at least one of the workpieces is cleaned by an energy wave, and then the two workpieces are brought into contact again, and at least one of heating, pressurizing, and ultrasonic application is performed. A joined body produced by joining objects to be joined together by one method.
4 6 . 前記接合された被接合物の少なく とも一方が半導体からなる、 請求項 4 5 の接合体。 46. The joined body according to claim 45, wherein at least one of the joined objects is made of a semiconductor.
PCT/JP2003/015178 2002-11-28 2003-11-27 Method and device for joining WO2004049427A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003284473A AU2003284473A1 (en) 2002-11-28 2003-11-27 Method and device for joining

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002-345306 2002-11-28
JP2002345306A JP2006134899A (en) 2002-11-28 2002-11-28 Bonding method and bonder

Publications (1)

Publication Number Publication Date
WO2004049427A1 true WO2004049427A1 (en) 2004-06-10

Family

ID=32375997

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2003/015178 WO2004049427A1 (en) 2002-11-28 2003-11-27 Method and device for joining

Country Status (3)

Country Link
JP (1) JP2006134899A (en)
AU (1) AU2003284473A1 (en)
WO (1) WO2004049427A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8578993B2 (en) 2008-11-21 2013-11-12 Mitsubishi Heavy Industries, Ltd. Wafer bonding apparatus

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4697066B2 (en) * 2006-06-22 2011-06-08 パナソニック株式会社 Electrode bonding method and component mounting apparatus
JP4209457B1 (en) 2008-02-29 2009-01-14 三菱重工業株式会社 Room temperature bonding equipment
JP5319154B2 (en) * 2008-04-18 2013-10-16 住友重機械工業株式会社 Stage equipment
TWI423364B (en) * 2008-11-27 2014-01-11 Mitsubishi Heavy Ind Ltd A wafer bonding apparatus
JP5760726B2 (en) * 2011-06-10 2015-08-12 株式会社リコー Component bonding apparatus, droplet discharge head manufacturing apparatus, and component bonding method
JP2014113633A (en) * 2012-12-12 2014-06-26 Bondtech Inc Bonding method and bonding device
KR101382267B1 (en) * 2013-12-19 2014-04-07 주식회사 성진하이메크 Automatic flatness controllable bonding tool and method of automatic flatness control therefor
JP7025744B2 (en) * 2017-09-27 2022-02-25 大学共同利用機関法人自然科学研究機構 Joining device and joining method
JP2023084215A (en) 2021-12-07 2023-06-19 日本航空電子工業株式会社 Floating connector and floating connector assembly

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10154728A (en) * 1996-11-22 1998-06-09 Matsushita Electric Ind Co Ltd Pressure bonding of electronic component with bump
JPH11145193A (en) * 1997-11-07 1999-05-28 Matsushita Electric Ind Co Ltd Method for forming soldered bump

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10154728A (en) * 1996-11-22 1998-06-09 Matsushita Electric Ind Co Ltd Pressure bonding of electronic component with bump
JPH11145193A (en) * 1997-11-07 1999-05-28 Matsushita Electric Ind Co Ltd Method for forming soldered bump

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8578993B2 (en) 2008-11-21 2013-11-12 Mitsubishi Heavy Industries, Ltd. Wafer bonding apparatus

Also Published As

Publication number Publication date
AU2003284473A1 (en) 2004-06-18
JP2006134899A (en) 2006-05-25

Similar Documents

Publication Publication Date Title
US7279358B2 (en) Mounting method and mounting device
JP3790995B2 (en) JOINING METHOD, DEVICE PRODUCED BY THIS METHOD, AND JOINING DEVICE
JP4686377B2 (en) Joining method and joining apparatus
US7645681B2 (en) Bonding method, device produced by this method, and bonding device
US20220230849A1 (en) Method for prefixing of substrates
JP4919604B2 (en) Joining method and joining apparatus
US7192841B2 (en) Method of wafer/substrate bonding
WO2002015654A1 (en) Mounting method and mounting device
US20070110917A1 (en) Bonding method, device formed by such method, surface activating unit and bonding apparatus comprising such unit
WO2004049427A1 (en) Method and device for joining
US20190385870A1 (en) Method for prefixing of substrates
JP2004119430A (en) Bonding device and method
JP4979918B2 (en) Pressurizing method and pressurizing apparatus
JP5181158B2 (en) Bonding method, device produced by this method, and bonding apparatus
JP2005191556A (en) Method and apparatus for gas-filled gold bonding
JP5438734B2 (en) Joining method
JP2005142537A (en) Longitudinal vibration bonding method and device
US6996889B2 (en) Electronic part mounting apparatus and method
WO2004049428A1 (en) Method and device for joining
JP2006080100A (en) Bonding method and bonding device
JP3773201B2 (en) Delivery method and apparatus for workpieces
JP3770552B2 (en) Joining method
WO2022181655A1 (en) Bonding method, substrate bonding device, and substrate bonding system
JP2004273941A (en) Junction method and device
JP2004119664A (en) Method and device for joining

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR

121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: JP

WWW Wipo information: withdrawn in national office

Country of ref document: JP