TWI313624B - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method Download PDF

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TWI313624B
TWI313624B TW095133071A TW95133071A TWI313624B TW I313624 B TWI313624 B TW I313624B TW 095133071 A TW095133071 A TW 095133071A TW 95133071 A TW95133071 A TW 95133071A TW I313624 B TWI313624 B TW I313624B
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substrate
rotation
liquid
processing
center
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TW200724247A (en
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Kazuo Jyodai
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Dainippon Screen Mfg
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Cleaning By Liquid Or Steam (AREA)

Description

1313624 、九、發明說明： 【發明所屬之技術領域】 - 本發明係有關一種藉由一面旋轉基板一面將處理液 供應至該基板而對基板施行預定處理之基板處理裝置及基 板處理方法。其中，基板係包含半導體晶圓、光罩用玻璃 基板、液晶顯示用玻璃基板、電漿顯示用玻璃基板以及光 .碟用基板等各種基板。 【先前技術】 镰 半導體裝置及液晶顯示裝置等之製程中，有藉由將氫 氟酸專藥液作為處理液供應至基板而對非所欲地形成在基 板上之薄膜（不要物）進行钱刻去除之情況。因此，為去除 形成在如上述之基板上之薄膜，提案有例如專利文獻i所 揭示之基板處理裝置。 該基板處理裝置中，藉由基板保持部將基板保持在大 致水平的狀態。在基板保持部安裝有延伸於垂直方向之旋 籲轉軸，藉由將該旋轉軸以馬達進行旋轉驅動，在使基板中 心與旋轉軸大致一致之狀態下，於基板保持部將基板保持 住下進行旋轉來使基板旋轉。又，在透過基板保持部保持 之基板上方配置有藥液供應喷嘴，以將藥液供應至基板中 心（基板上面之旋轉中心）附近。此時，供應至基板上面之 '中心附近之藥液係藉由伴隨基板之旋轉之離心力的作用擴 .散而遍及基板整體上面，而對基板進行蝕刻處理。 [專利文獻1]曰本專利特開2001-237214號公報（第工 318459 5 1313624 【發明内容】 (發明所欲解決之課題） 职工所迷對丞板進行蝕刻處理時，係要求對基 •板上面之面内均勻地進行蝕刻處理。因此，為提高基板上 面之钱刻處理的面内均勻性，使藥液迅速地遍及基板上面 之各部，亦即減少將藥液分別供應至基板上面之各部為止 之，間差，以及使供應至基板上面之各部的藥液量均勾即 變得重要。 然而，習知裝置中，由於藉由離心力的作用使自藥液 供應喷嘴供應至基板_ 八 樂液擴散以將藥液供應至 土板之為緣口Ρ，因此到藥液供應至基板 間與到藥液供應至基板之端緣邻Α μ夕心寸近為止之和 差。尤其，基板从5 _之間產生時間 土板為液日日顯不用玻璃基板 在四角形基板之中 四㈣基板時’ 落之部分），到供庵華液^四角形基板之角落部（四個角 外，為使自藥液供應嘖嘴 較大的時間差。此 至基板之端緣部，相對於;心附近之藥液擴散 之藥液量，供鹿至其b 部之每單位面積 少。如上述^果=4緣部之每單位面積之藥液量係變 面均勻地進行處理。°裝置中，阻礙了將基板整體上 因此，於習知裝置中，為提高處理 以下之作法。，亦即H + 处生，考I有 樂心耗量係會直接增大運作成本，並且 318459 6 1313624 、亦對從基板排出之藥液之排液處理所需的設備造成相對的 負擔’而較不理想。又，亦考量提高基板之旋轉速度，使 供應至基板中心附近之藥液快速擴散至基板之端緣部，但 -為了對應基板之高速旋轉，除裝置構成變複雜外，對裝置 之構成零件亦更要求耐久性，而並不實際。尤其，當基板 尺寸大型化時，從基板中心到基板端緣為止之距離會變 -長，對提高基板之旋轉速度來達到處理之均勻化亦有極限。 癱 另一方面，以不增加供應至基板之藥液量及/或基板之 旋轉速度而提尚處理之均勻性之方法而言，亦考量有一面 使藥液供應喷嘴面向於基板上面，一面對以水平姿勢旋轉 之基板使藥液供應噴嘴水平移動。具體而言，考量有藉由 面自藥液供應喷嘴供應藥液，一面使藥液供應喷嘴往返 移動於對應基板中心部之位置與對應基板端緣部之位置之 間以達到處理之均勻化。然而，此時，例如在藥液供應 喷嘴將藥液供應至基板端緣部時，由於並未將藥液供應至 鲁基板中心部’而且’由於離心力將藥液從基板中心流往端 緣部，而因此有基板中心部形成部分乾燥之問題。結果， 反而造成使處理之均勻性惡化。 本么明係有鑒於上述課題而研創者，其目的在提供一 種以少量的處理液即能將基板整體上面均勻地進行處理之 基板處理裝置及基板處理方法。 (解決讓題之手段） 本發明之絲處理裝置之—樣態係—面使基板以大 致水平文勢旋轉-面將處理液供應至該基板而對基板施行 7 318459 1313624 n理之基板處理裝置，為達成上述目的，其特徵為具 羊板保持手段，將基板以A致水平姿勢保持；旋轉驅 旋轉驅動基板保持手段以使基板繞著預定之旋轉 ~ Jii： β ’第lt#出手段’朝向藉由旋轉驅動手段旋轉之 基t面，沿著與基板之旋轉半徑方向大致平行的預定排 列方向以列狀噴出處理液；以及第2喷出手段，朝基板上 面之旋轉中心嘴出處理液，當將通過基板之旋轉中心並延 ^於基板之旋轉半徑方向之線設為_半徑線時，構成自 弟1喷料段喷出且著液於基板上面之列狀處理液之處理 =的各個著液位置’係自旋轉半徑線上朝正交於該旋轉半 徑線之偏移方向僅錯開預定距離。 又’本發明之基板處理方法之一態樣係一面使基板以 以水平㈣旋轉-面將處理液供應至該基板而對基板施 订預定處理之基板處理方法，為達成上述目的，其特徵為 具備··使基板以大致水平姿勢繞著預定之旋轉中心旋轉之 ►基板旋轉步驟；以及在基板旋轉步驟中一面自第工喷出手 段朝向基板上面沿著與基板之旋轉半徑方向大致平行的預 定排列方向以列狀噴出處理液，一面自第2喷出手段朝向 基板上面之旋轉中心喷出處理液之步驟，當將通過基板之 旋轉中〜並延伸於基板之旋轉半徑方向之線設為旋轉半徑 線時、’構成自第！嘴出手段嘴出且著液於基板上面之列狀 處理液之處理液的各個著液位置，自旋轉半徑線上朝正交 於該旋轉半徑線之偏移方向僅錯開預定距離。 如上述構成之發明（基板處理裝置及方法）中，由於朝 8 318459 1313624 基板上面由第丨喷出手段沿著與基板之旋轉方向大致平行 的方向=列狀喷出處理液（列狀處理液），因此處理液將遍 及較大範圍同時地著液於基板上面。因而，將處理液供應 f基板上面之各部為止之時間差設定於最小限，能將預定 里之處理液供應至基板上面之各部。並且，將構成列狀處 理液之處理液的各個著液位置，並非為通過基板之旋轉中 心而延伸於基板之旋轉半徑方向之旋轉半徑線上，而是自 _該旋轉半徑線上沿正交於旋轉半徑線之方向（偏移方向）僅 錯開預定距離。藉由如上述使列狀處理液著液，具有以下 之優點。亦即，著液於基板上面之處理液係沿追隨合成有 作用於與伴隨基板之旋轉之基板的旋轉方向相反方向之反 作用力與作用於旋轉半徑方向之離心力之向量之方向以及 力之大小流動於基板上面，且排出至基板外。在此，於使 構成列狀處理液之各處理液著液於旋轉半徑線上時，作用 於構成列狀處理液之各處理液（液滴）之離心力的方向（旋 1 +徑方向）係’皆成為同—方向。另—方面，藉由如本發 明二不使構❹m處理敎各處料自旋轉半徑線上錯開 而著液仙於構成列狀處理液之各處理液之離心力的方 向（方疋轉半控方向）係成為互為不同之方向。結果，著液於 基板上面後之處理液（液滴）之執跡互為不同，而促進基 上面的處理液均勻分散。 置第2噴 心噴出處 且著液於 再者，根據本發明，在第1喷出手段之外設 出手段，由該第2噴出手段朝基板上面之旋轉中 理液。因此，即使有無法將自第】喷出手段噴出 318459 9 1313624 ,基板上面之處理液充分地供應至基板之旋轉中心，或者著 液於基板上面之處理液的軌跡脫離開基板之旋轉中心時， 亦藉由從第2喷出手段所喷出之處理液，將處理液供應至 ，基板之旋轉中心而能確實地處理基板中心部。另外，第i ，及第2喷出手段係可作成各以不同個體構成而個別配置之 形態’亦可一體地構成而配置之形態。 - 如上述，根據本發明，藉由從第2喷出手段所喷出之 處理液確實地處理基板巾心、部之㈣並亦能#由從第^ 出手段所噴出之列狀處理液迅速地將處理液供應至基板上 面之各部，而形成能均勻地處理基板上面。因而，不會增 加供應至基板上面之處理液的量，而以少量的處理液即能 將基板上面整體均勻地進行處理。 在此，在以通過基板之旋轉中心而延伸於偏移方向之 線與旋轉半徑線段割基板上面所規定之四個象限之任一者 加以限定自第1喷出手段所喷出之列狀處理液的著液位置 鲁之形態亦可。即使在如上述之範圍限定列狀處理液之著液 位置，亦能藉由基板之旋轉而均勻地處理基板上面整體。 再者，藉由限定列狀處理液之著液位置，能有效地減低處 理液之消耗量。 立又，由第1喷出手段所噴出之處理液的喷出方向係任 心例如，可作成面對基板上面垂直地噴出處理液，亦可 -面對基板上面沿基板之旋轉方向自斜上方以列狀噴出處理 液。但，如後者所示藉由喷出處理液獲得以下之效果。亦 即，藉由沿基板之旋轉方向喷出處理液，著液於基板上面 318459 10 1313624 之處理液雖接受作用於與伴隨基板之旋轉之基板的旋轉方 向相反方向之反作用力、與作用於旋轉半徑方向之離心 -力，但處理液亦沿依循旋轉方向之喷出方向擴展至該喷出 ，方向之前面側。因而，以少量的處理液，即能使處理液均 .勻分散至更大範圍，且能進一步地提高供應至基板上面之 各部之每單位面積的處理液之供應量的均勻性。又，對於 -垂直地將處理液噴出至基板上面時，朝基板上面喷出且著 液於基板上面之處理液，能抑制與已供應至基板上面之處 理液之干擾。例如，由於著液於基板上面之處理液與附著 於隨基板之旋轉-起移動於著液位置之基板上面的處理液 之衝突，雖會使基板上面之處理液之液面隆起，而使處理 之均勻性惡化，但能防止如上述之現象產生。 又，為第1喷出手段最好沿與基板之旋轉半徑方向 大致平行的排財向設置具錢數個喷出孔之多孔喷嘴， 自該複數個噴出孔之各㈣出處理液。根據如上述之構 成，沿上述之排列方向能將處理液以列狀供應至基板，例 如如半導體晶圓之大致圓形之基板係不用說，對於如液晶 顯=用玻璃基板之四角形基板供應處理液時，能使處理= 確實地遍及基板之端緣部，不僅可抑制處理液之浪費亦能 均勻地處理基板。 、 於此 ▲處理長方形之四角形基板時’將自 手段噴出且著液於四自 $出 ㈣具卜氣么角基 列狀處理液的排列方 :的長度,又為四角形基板之短邊的—半長度以下較佳。祀 據如上权構成，對於旋轉之四㈣基板上面能使列狀處 318459 11 1313624 理液確實地著液，而能獲得以 處理液之排列方向的長戶亦即，當使列狀 u万⑽長度比四角形基板之 要長：，伴隨基板之旋轉，產生自第！喷出手上it ^狀理液之中，基板端緣側之處理液的—部分未供麻至 土板上面之狀態（例如列狀處理液之排列方向與四角形1 Γ短=成為平行時)。當基板自該狀態進-步_轉 .四角形基板之角落部（四個角落）會將由第！喷出手段 所喷出之基板端_之處理液縱㈣㈣，而產生處理液 眘r因此藉由對於四角形基板上面使列狀處理液確 實地者液，可防止處理液反彈，並能均勾地處理基板。尤 其，當基板尺寸較大時，由於角落部之線速度亦變大，因 此如上述所示設定·處理液之排列方向的長度，在防止 處理液反彈方面變得非常地有效。 本發明之基板處理裝置之另一態樣係一面使基板以 大致水平姿⑽轉—面將處理液供應至該基板*對基板施 籲行預定處理之基板處縣置，為達成上述目的，其特徵為 具備：基板保持手段，將基板以大致水平姿勢保持；旋轉 驅動手段，旋轉驅動基板保持手段以使基板繞著預定之旋 轉中。方疋轉，以及噴出手段，朝藉由旋轉驅動手段旋轉之 基板上面，沿著與基板之旋轉半徑方向大致平行的方向以 列狀，並且沿基板之旋轉方向對基板上面自斜上方噴出處 .理液，構成自噴出手段所噴出且著液於基板上面之列狀處 理液之處理液的各個著液位置係於將通過基板之旋轉中心 並延伸於基板之旋轉半徑方向之線設作旋轉半徑線時，於 12 318459 1313624 基板上面滿足以下之第1及第2條件。 以大二之基板處理方法之另-態樣係-面使基板 二轉一面將處理液供應至該基板而對基板 疋 基板處理方法，為達成上述目的，其特徵 為:備：使基板以大致水平姿勢繞著預定之旋轉中心旋轉 2板旋轉步驟；以及在基板旋轉步驟中自喷出手段朝向 二板上面沿與基板之旋轉半料#大致平行的預定排列方 二二t ’並且沿基板上面之旋轉方向對基板上面自斜上 #成自w手段喷出且著液於基板 面之列狀處理液之處理液的各個著液位置係於將通過基 之=中心並延伸於基板之旋轉半徑方向之線設為旋轉 +徑線k，於基板上面滿足以下之第〗及第2條件。 在此’第1條件係指從旋轉半㈣巾相對於基板之旋 U延伸於—方側之線上，朝正交於旋轉半徑線之偏移 。且與基板旋轉方向相反之方向僅錯開預定距離之構 、。此外’第2條件係指，對於通過基板之旋轉中心而延 伸於偏移方向之線而言，係位於著液位置之基板的旋轉中[Technical Field] The present invention relates to a substrate processing apparatus and a substrate processing method for performing predetermined processing on a substrate by supplying a processing liquid to the substrate while rotating the substrate. The substrate includes various substrates such as a semiconductor wafer, a photomask glass substrate, a liquid crystal display glass substrate, a plasma display glass substrate, and a light disk substrate. [Prior Art] In the process of a semiconductor device, a liquid crystal display device, or the like, there is a method of supplying a film of a hydrofluoric acid as a processing liquid to a substrate to undesirably form a film (an object) on a substrate. The situation of engraving. Therefore, in order to remove the film formed on the substrate as described above, for example, a substrate processing apparatus disclosed in Patent Document i is proposed. In the substrate processing apparatus, the substrate is held at a substantially horizontal state by the substrate holding portion. A rotation axis extending in the vertical direction is attached to the substrate holding portion, and the rotation axis is rotated by a motor, and the substrate is held in the substrate holding portion while the center of the substrate and the rotation axis are substantially aligned. Rotate to rotate the substrate. Further, a chemical supply nozzle is disposed above the substrate held by the substrate holding portion to supply the chemical solution to the vicinity of the center of the substrate (the center of rotation of the upper surface of the substrate). At this time, the chemical liquid supplied to the vicinity of the center of the substrate is spread over the entire substrate by the centrifugal force accompanying the rotation of the substrate, and the substrate is etched. [Patent Document 1] Japanese Laid-Open Patent Publication No. 2001-237214 (Patent No. 318459 5 1313624) SUMMARY OF THE INVENTION (Problems to be Solved by the Invention) When an employee etches a fascia, it is required to apply a base plate. The etching process is uniformly performed in the upper surface. Therefore, in order to improve the in-plane uniformity of the money processing on the substrate, the chemical liquid is rapidly spread over the respective portions of the substrate, that is, the respective portions of the liquid medicine are supplied to the upper portions of the substrate. Up to now, the difference between the amount of the liquid and the amount of the liquid supplied to each part of the substrate becomes important. However, in the conventional device, since the centrifugal force is applied to the supply of the liquid supply nozzle to the substrate _ The liquid is diffused to supply the liquid to the soil plate, so that the difference between the supply of the liquid to the substrate and the end of the supply of the liquid to the substrate is poor. In particular, the substrate is 5 _ between the time of the soil plate is the liquid day, the glass substrate is not used in the four (four) substrate of the quadrilateral substrate when the 'falling part', to the corner of the supply of the liquid crystal ^ quadrilateral substrate (four corners, in order to make Self-medication The liquid supply nozzle has a large time difference. This is to the end edge of the substrate, relative to the amount of the liquid medicine which is diffused by the liquid near the heart, and is less for each unit area of the b-part of the deer. The amount of the chemical liquid per unit area is uniformly treated. In the device, the entire substrate is hindered. Therefore, in the conventional device, the following processing is improved, that is, H + is generated, The test I have a happy consumption system will directly increase the operating cost, and 318459 6 1313624, also imposes a relative burden on the equipment required for the liquid discharge from the substrate. It is also less desirable. Increasing the rotation speed of the substrate, so that the chemical liquid supplied to the vicinity of the center of the substrate is quickly diffused to the edge portion of the substrate, but in order to cope with the high-speed rotation of the substrate, in addition to the complexity of the device configuration, the components of the device are also required to have durability. In particular, when the size of the substrate is increased, the distance from the center of the substrate to the edge of the substrate becomes longer, and there is a limit to the uniformity of processing to increase the rotational speed of the substrate. In order to increase the uniformity of the treatment without increasing the amount of the liquid supplied to the substrate and/or the rotational speed of the substrate, it is also considered that one side of the liquid supply nozzle faces the substrate and faces in a horizontal posture. The rotating substrate moves the liquid supply nozzle horizontally. Specifically, it is considered that the chemical liquid supply nozzle is reciprocally moved to the position of the corresponding substrate center portion and the corresponding substrate end edge portion by supplying the chemical liquid from the chemical liquid supply nozzle. Between the positions, the homogenization of the treatment is achieved. However, at this time, for example, when the chemical supply nozzle supplies the chemical liquid to the edge portion of the substrate, the liquid medicine is not supplied to the center portion of the substrate and the centrifugal force is The chemical liquid flows from the center of the substrate to the edge portion, and thus the central portion of the substrate is partially dried. As a result, the uniformity of the treatment is deteriorated. The present invention has been made in view of the above problems, and an object of the invention is to provide a substrate processing apparatus and a substrate processing method capable of uniformly processing the entire substrate with a small amount of processing liquid. (Resolving the means for solving the problem) The wire processing apparatus of the present invention is configured to apply a liquid to the substrate by rotating the substrate to the substrate in a substantially horizontal manner, and to apply the substrate to the substrate. 7 318459 1313624 In order to achieve the above object, the method is characterized in that the substrate is held by the sheep, and the substrate is held in an A horizontal posture; the rotary drive rotates and drives the substrate holding means to rotate the substrate around the predetermined shape ~ Jii: β 'the first lt# means The processing liquid is ejected in a row along a predetermined array direction that is substantially parallel to the direction of the radius of rotation of the substrate, and the second ejecting means is configured to discharge the processing liquid toward the center of rotation of the substrate. When the line passing through the center of rotation of the substrate and extending in the direction of the radius of rotation of the substrate is set as the _radius line, the processing of the column-shaped processing liquid which is ejected from the first section of the substrate and is immersed on the substrate is determined. Each of the liquid-holding positions is shifted by a predetermined distance from the rotation radius line toward the direction orthogonal to the rotation radius line. Further, in one aspect of the substrate processing method of the present invention, a substrate processing method for applying a predetermined processing to a substrate by supplying a processing liquid to the substrate in a horizontal (four) rotation-plane is provided for the purpose of achieving the above object. a step of rotating the substrate with the substrate rotating in a substantially horizontal posture about a predetermined center of rotation; and a step of rotating the substrate from the working ejection means toward the upper surface of the substrate substantially parallel to the direction of the radius of rotation of the substrate The step of ejecting the treatment liquid in a row direction, and ejecting the treatment liquid from the second discharge means toward the rotation center of the upper surface of the substrate, and rotating the line passing through the rotation of the substrate to the direction of the radius of rotation of the substrate When the radius line is, 'constitutes from the first! Each of the liquid-drawing positions of the treatment liquid for the treatment liquid which is discharged from the nozzle and is placed on the substrate is shifted by a predetermined distance from the rotation radius line in the direction orthogonal to the rotation radius line. In the invention (substrate processing apparatus and method) configured as described above, the processing liquid (column processing liquid is discharged in a column shape in a direction substantially parallel to the rotation direction of the substrate by the second discharge means on the upper surface of the substrate 8 318459 1313624 Therefore, the treatment liquid will be simultaneously immersed on the substrate over a wide range. Therefore, the time difference until the processing liquid is supplied to each of the upper portions of the substrate is set to the minimum, and the predetermined processing liquid can be supplied to the respective portions on the upper surface of the substrate. Further, the respective liquid-drawing positions of the processing liquids constituting the column-shaped processing liquid are not extended on the radius of rotation line in the direction of the radius of rotation of the substrate by the center of rotation of the substrate, but are orthogonal to the rotation from the radius of the rotation radius. The direction of the radius line (offset direction) is only shifted by a predetermined distance. By liquefying the columnar processing liquid as described above, the following advantages are obtained. That is, the processing liquid that is immersed on the substrate flows along the direction and the magnitude of the force that follows the reaction of the reaction force acting in the opposite direction to the rotation direction of the substrate accompanying the rotation of the substrate and the vector of the centrifugal force acting in the direction of the radius of rotation. Above the substrate, and discharged to the outside of the substrate. Here, when the respective processing liquids constituting the columnar processing liquid are immersed on the radius of gyration, the direction of the centrifugal force acting on each of the processing liquids (droplets) constituting the columnar processing liquid is "rotation 1 + radial direction" All become the same direction. On the other hand, in the direction of the centrifugal force of each of the treatment liquids constituting the column-shaped treatment liquid, the direction of the centrifugal force of the treatment liquids constituting the column-shaped treatment liquid is shifted by the ❹ ❹ m treatment according to the present invention. The system is in a different direction. As a result, the treatment liquids (droplets) which are immersed on the substrate are different from each other, and the treatment liquid on the promotion substrate is uniformly dispersed. Further, according to the present invention, a means is provided in addition to the first discharge means, and the second discharge means adjusts the liquid toward the upper surface of the substrate. Therefore, even if it is impossible to eject the 314459 9 1313624 from the ejector means, the treatment liquid on the substrate is sufficiently supplied to the rotation center of the substrate, or the trajectory of the treatment liquid on the substrate is separated from the rotation center of the substrate. Further, the treatment liquid discharged from the second discharge means supplies the treatment liquid to the center of rotation of the substrate, whereby the center portion of the substrate can be reliably processed. Further, the i-th and the second ejecting means may be formed in a form in which they are individually arranged in different individual configurations, and may be integrally configured. - As described above, according to the present invention, the processing liquid discharged from the second ejection means can surely process the substrate core and the portion (4) and can also be quickly discharged from the array of processing liquids discharged from the second means The treatment liquid is supplied to the respective portions on the substrate to form a uniform treatment of the substrate. Therefore, the amount of the treatment liquid supplied onto the substrate is not increased, and the entire substrate upper surface can be uniformly treated with a small amount of the treatment liquid. Here, the column-like processing ejected from the first ejection means is defined by any one of four quadrants defined by the line extending in the offset direction through the center of rotation of the substrate and the upper surface of the rotation radius segment cutting substrate. The liquid position of the liquid can also be in the form of Lu. Even if the position of the liquid of the columnar processing liquid is limited as described above, the entire upper surface of the substrate can be uniformly processed by the rotation of the substrate. Further, by limiting the position of the liquid of the columnar treatment liquid, the amount of the treatment liquid can be effectively reduced. Further, the discharge direction of the treatment liquid sprayed by the first discharge means is, for example, a process liquid can be sprayed perpendicularly to the upper surface of the substrate, or can be faced from the upper side of the substrate in the direction of rotation of the substrate. The treatment liquid is sprayed in a row. However, as shown in the latter, the following effects are obtained by ejecting the treatment liquid. That is, by ejecting the treatment liquid in the direction of rotation of the substrate, the treatment liquid immersed on the upper surface of the substrate 318459 10 1313624 receives a reaction force acting in the opposite direction to the rotation direction of the substrate accompanying the rotation of the substrate, and acts on the rotation. The centrifugal force in the radial direction, but the treatment liquid also spreads in the discharge direction in the direction of rotation to the discharge side, the front side of the direction. Therefore, the treatment liquid can be uniformly dispersed to a larger extent with a small amount of the treatment liquid, and the uniformity of the supply amount of the treatment liquid per unit area supplied to each portion of the substrate can be further improved. Further, when the processing liquid is ejected to the upper surface of the substrate vertically, the processing liquid which is ejected onto the upper surface of the substrate and is immersed on the surface of the substrate can suppress interference with the processing liquid supplied onto the substrate. For example, since the treatment liquid on the substrate is collided with the treatment liquid attached to the substrate on the substrate which is rotated by the substrate, the liquid level of the treatment liquid on the substrate is raised, and the treatment is performed. The uniformity is deteriorated, but the phenomenon as described above can be prevented. Further, it is preferable that the first discharge means is provided with a plurality of orifices having a plurality of discharge holes in a row direction substantially parallel to the direction of the radius of rotation of the substrate, and the treatment liquid is discharged from each of the plurality of discharge holes. According to the configuration as described above, the processing liquid can be supplied to the substrate in a row in the above-described arrangement direction. For example, a substantially circular substrate such as a semiconductor wafer is not required, and is supplied to a quadrangular substrate such as a liquid crystal display glass substrate. In the case of liquid, the treatment can be surely applied to the edge portion of the substrate, and the substrate can be uniformly processed not only by suppressing the waste of the treatment liquid. In this case, when the rectangular quadrangular substrate is processed, the length of the arrangement of the processing liquid from the method is "sprayed by the means and the liquid is applied to the four sides of the square", and the length of the square substrate is also the short side of the square substrate. It is preferably half length or less. According to the above constitution, for the rotating four (four) substrate, the column 318459 11 1313624 can be surely liquefied, and the long-term households in the direction in which the treatment liquid is arranged can be obtained, that is, when the columnar shape is u (10) The length is longer than that of the quadrangular substrate: with the rotation of the substrate, it is generated from the first! The portion of the treatment liquid on the edge of the substrate is not supplied with the hemp to the top of the soil plate (for example, the arrangement direction of the columnar treatment liquid is shorter than the square shape 1 = = parallel) . When the substrate advances from this state, the corners (four corners) of the quadrilateral substrate will be by the first! The processing liquid in the substrate end _ which is ejected by the ejecting means is vertical (4) (4), and the treatment liquid is generated with caution. Therefore, by arranging the liquid in the column-shaped processing liquid on the tetragonal substrate, the treatment liquid can be prevented from rebounding and can be uniformly Process the substrate. In particular, when the substrate size is large, the linear velocity of the corner portion is also increased. Therefore, the length of the arrangement direction of the treatment liquid as described above is extremely effective in preventing the rebound of the treatment liquid. Another aspect of the substrate processing apparatus of the present invention is to supply the processing liquid to the substrate in a substantially horizontal posture (10), and to apply a predetermined treatment to the substrate at the substrate, in order to achieve the above object, The method includes a substrate holding means for holding the substrate in a substantially horizontal posture, and a rotational driving means for rotationally driving the substrate holding means to rotate the substrate about a predetermined one. The side of the substrate is rotated in a direction substantially parallel to the direction of the radius of rotation of the substrate, and the upper surface of the substrate is ejected from the obliquely upward direction along the direction of rotation of the substrate. The liquid liquefaction, each liquid immersion position of the treatment liquid which is formed by the discharge means and is immersed in the column-shaped treatment liquid on the substrate is set as a rotation radius by a line passing through the rotation center of the substrate and extending in the direction of the radius of rotation of the substrate In the case of the line, the following first and second conditions are satisfied on the substrate of 12 318459 1313624. In order to achieve the above object, the substrate is processed by the substrate processing method of the second substrate processing method in which the substrate is transferred to the substrate by two substrates, in order to achieve the above object. The horizontal posture rotates the two-plate rotation step about the predetermined rotation center; and in the substrate rotation step, the discharge device is directed toward the second plate along a predetermined arrangement square parallel to the rotation half of the substrate. The direction of rotation of the processing liquid on the substrate from the obliquely upper surface of the processing liquid which is ejected from the w means and which is liquid on the substrate surface is at a radius of rotation which is the center of the substrate and extends over the substrate. The direction line is set to the rotation + diameter line k, and the following conditions and the second condition are satisfied on the substrate. Here, the 'first condition' means an offset from the rotation radius line from the line on which the rotation half (four) of the napkin extends on the side with respect to the substrate U. And the direction opposite to the direction of rotation of the substrate is shifted by only a predetermined distance. Further, the second condition means that the line extending in the offset direction through the center of rotation of the substrate is in the rotation of the substrate at the liquid-holding position.

心側之端部旋轉待線中相對於基㈣射 之構成。 乃J 根據如上述之構成，由於㈣㈣段沿著與基板之旋 ，+徑方向大致平行的排列方向以列狀嘴出處理液（列狀 •=理液），因此遍及較大範圍可將處理液供應至基板上面之 各部為止之時間差止於最小限而能供應處理液。 又’藉由滿足第1條件，作用於構成著液於基板上面 318459 13 1313624 .之列狀處理液之處理液的各液滴之離心力的方向（旋轉半 徑方向）係成為互為不同之方向。結果，著液於基板上面之 -處理液（液滴）之執跡互為不同，且促進基板上面的處理液 _均勻分散。再者’藉由沿基板之旋轉方向噴出處理液，著 $於基板上面之處理液係沿喷出方向擴展至該喷出方向之 刖面側。因而，以少量的處理液即能使處理液均 .更大範圍。 ’藉由滿足第2條件’著液於基板上面之列狀處理 液之中位於基板之旋轉中心側的端部之處理液係一面通過 基板之旋轉中心一面往基板之端緣侧流動。具體而言，除 作用於來自喷出手段之喷出方向之力之外，一面接受作用 於與伴隨基板之旋轉之基板的旋轉方向相反方向之反作用 !其2:用於旋轉半徑方向之離心力，一面將處理液供應 至基板+心部，且一面分散一面排出至基板外。 因而，藉由滿足第！及第2條件，既能確實處理基板 _中心部’亦可藉由雜處理液迅速地將處理液供應至基板 上面之各部，且能均勻地處理基板上面。結果，在不增加 供應至基板上面之處理液之量的情形下，即可以少^ 理液均勻地處理基板。 处 在此，為抑制處理液之浪費且均勻地處理基板，作 噴出手&沿與基板之旋轉半徑方向大致平行的排列方向， 置設有複數個嘴出孔之多孔噴嘴，作成自該複數個嘴出孔 之各個噴出處理液之形態亦可。 又’當處理長方形之四角形基板時，將自噴出手段喷 318459 14 1313624 基板上面之列狀處理液之排列方向的長度u 滿足以下條件之方式設定較佳。亦即， L^Re . Sin0 +(wn/2) - 其中’最好設定為： .從四㈣基板之旋轉中心到舰處理液之四角 形基板的旋轉中心側之端部著液位置為止之距離， -~…連接四角形基板之旋轉中心與列狀處理液之四 2形基板的旋轉中心側之端部著液位置之線段、與通過四 角形基板之旋轉中心延伸於偏移方向之線所構成之角， Wii···四角形基板之短邊長度。 根據如上述之構成，對於旋轉之四角形 =處理液確實地著液^能防止旋轉之四角形基板之^ 洛部（四㈣落）將自喷出手段喷出之基板的端緣側之處理 液切過。結果，可防正處理液反彈，而均勻地處理基板。 (發明之效果） >根據本發明，藉由以列狀將處理液噴出至基板上面， 遍及較大範圍將處理液供應至基板上面之各部為止之時間 差止於最小㈣供應處缝。並且，藉由將構成著液於基 板上面之列狀處理液之處理液的各個著液位置自旋轉半徑 線上沿正交於旋轉半徑線之偏移方向僅錯開預定距離，可 促進基板上面的處理液均勾分散。再者，藉由朝基板中心 供應處理液，以確實地處理基板中心部。因而，既能確實 地處理基板中^部，並可藉由列狀處理液對基板上面之各 部迅速地供應處理液，且以少量之處理液即能均勻地處理 318459 15 1313624 基板上面整體。 【實施方式】 - <第1實施形態> 第1圖係顯不本發明基板處理裝置之第1實施形態的 圖。該基板處理褒置係將稀氫氟酸等藥液作為處理液供應 至長方形的四角形基板之LCD用玻璃基板w(以下簡稱 基板W」），以將在該基板w上面所形成之不想要的薄 膜（不要物）進行餘刻去除之裝置。如第i圖所示，該裝置 係具備：將基板W以大致水平姿勢保持之基板保持部丨（基 板保持手段）；將該基板保持部丨旋轉驅動之旋轉驅動部 2;將處理液供應至保持於基板保持部}之基板w上面之 液喷出喷嘴部3 ;使液喷出喷嘴部3移動於上下方向及水 平方向之喷嘴驅動部4;用以回收自基板W甩掉之液體之 杯^ 5 ’收納各個裝置各部之外殼6 ;以及控制|置整體之 控制部（未圖示）。 ^基板保持部丨係具備：具有與基板w同程度之平 =之基板切板11 ;固著於該基板支持板U上面以」 杯二板W周緣部之周緣支持鎖12 ;以及固著於基板支我 面以支持基板w之下面中央部之中央支持銷 性樹腊構成基板保持部1係考量執行敍刻處理而以耐藥t 變。I肋持銷12係對應於基板w之四㈣落部而g L !持銷12係具備；自下方支持基板w之夕 叉荇口〗21，以及抵接於支持在支持台ΐ2ι之遵 318459 16 1313624 _ 周之端广艮制基板W之移動之導引隆起面122，將 i圖式緣部在四個部位支持。另外，帛1圖中，為避 持銷^ ’僅顯示兩個周緣支持銷12。又，中央支 四個。/外對應之中央部而在基板支持板n配置有 中央支持銷13之個數並未限定於四個。 •方端部持=1之下面係安襄有中空之筒軸21的上 22傳達°Λ_21^Τ方端部以透過傳動帶機構 傳達馬達23之旋轉驅動力之方式構成。因此 Γ美ΠΓΓ在基板支持板11之基板w係繞著旋轉中 旋轉。如上所示，該實施形態中， ! η帶機構22之旋轉驅動部2作為本發明 的旋轉驅動手段」作用。 又，筒軸21係以中空筒狀之構件構成，且沿其中心 配=，喷嘴16。然後’在液噴嘴16係貫穿液供應管⑹， 且以以液供應官161之上端面向基板w之下面中央部，從 :二t噴嘴孔162將藥液或洗淨液作為處理液以能 /面之旋轉中心附近之方式構成。另外，在 此’使用純水等作為洗淨液。 再者，筒軸2"系面向基板支持板u之開口延伸，藉 由相對於基板支持板u而位在上側開設有排出口 Η。又: 筒軸2!與液嘴嘴16之間隙係透過流量調節闕恤以配管 86開放於大减環境之方式構成。而且，於排出口 17，從 該液喷嘴16之側面與筒轴21内周面之間隙將來自大 環境之氣體喷出。此外，在液喷嘴16之前端部係形成為剖 318459 17 1313624 面τ字型，且在平坦的上面之中央部開設有處理液之噴嘴 孔 162 。 ' -、液噴嘴16係連接於配管80。該配管80之基端部係分 -=為二，第1分歧配管80a係連接有藥液供應源81，第2 分歧配管80b係連接有純水供應源82。在各分歧配管8〇a、 ，分別設有開閉閥83a、83b。然後，因應來自控制部之 -開閉指令打開開閉閥83b，關閉開閉閥83a，藉此洗淨液（純 水）經由配管80壓送至液喷嘴16而從液噴嘴16之噴嘴孔 162朝基板W之下面供應。又，因應來自控制部的開閉指 令打開開閉閥83a，關閉開閉閥83b，藉此形成為能從液喷 嘴16之喷嘴孔162朝基板w之下面供應藥液之形態。 、又，氣體供應路163係構成為：設在液喷嘴16^内， 並且其下端部係透過設有開閉閥84a之配管84連通連接於 氣體供應源85,並自氣體供應路163之上端部的嘴出口對 與基板W下面之間之空間，能供應清淨的 或^的惰性氣體（氮氣等）等清淨的氣體之形能。 處理Sr广及傳動帶機構22等係收容於設在作為該基板 &板之基部構件61上之圓筒狀外殼62内。該 外喊62透過軸承63連接於筒軸21 筒軸21之狀態。亦即， 成為〇覆 ^ η 用卜双62將攸馬達23到連接於基 :ίι = 之筒轴21周圍包覆，伴隨於此，在筒 ::屮之馬達23亦作成以遮蓋覆蓋之狀態。 上下方及部3係具備噴嘴本體30，対本體3〇以 下方向及水平方向移動自如地配設在保持於基板支持部 318459 18 1313624 1之基板w上方。4 部，在該支持臂7 體30係安裝在支持臂7之前端 此，構成為藉由驅：：一端部係連結有喷嘴驅動部4。因 由15動噴嘴驅動部4，能將喰嘴太妙m放么 在後述之處理|置， （4月匕將喷嘴本體3〇移動 %搬出人時從基心基板搬送手段（未圖示）將基板 動部”二嘴 =退避之退避位置之間。喷嘴驅 之水平移動 嘴本體3G與支持臂7 -體地水平移動 體地升降於上下以及使嘴嘴本體30與支持臂7 -成為能使㈣本mm動源42°藉由料之構成， 驅動使之上下移：之上面’並且藉由升降驅動源-之 :噴出喷嘴部3係與液噴嘴16側同樣 擇性地切換藥液與洗淨液來供應至基板w 即，喷嘴本體3〇係連接有液供應管31，且以能 應管31壓送至喷嘴太鲈w疮 乂此將自液供 處理液自喷嘴本體3()#ϋ 呆持於基㈣持部〗之基板w上面之方式 為-，在第1分歧配管87a係連接有藥液供應源、81，在第 2分歧配管87b係連接有純水供應㈣。在分歧配管 奶分別設有開閉^8a、88b。而且，形成為因應來自控 制部之開閉指令打開開閉閥88b，關閉開閉閥咖，藉此將 •洗淨液（純水）自喷嘴本體3〇朝基板冒上面供應。又 ' 因 應來自控制部之開閉指令打開開閉閥88a，關閉開閉閥 ㈣，藉此自喷嘴本體30能朝基板％上面供應藥液之形離。 318459 19 1313624 • 第2圖係顯示液喷出喷嘴部之構成以及由液喷出噴嘴 邛所喷出之處理液的基板上面的著液位置的斜視圖，第3 圖係八俯視圖。具體而言，該等第2圖及第3圖係顯示藉 由喷嘴驅動部4之驅動，將液喷出喷嘴部3定位在基板W 之正上方的處理位置，且在該處理位置自液喷出喷嘴部3 朝基板W之上面喷出處理液之樣態。 喷嘴本體30係構成為延伸於與基板w之旋轉半徑方 向大致平行的排列方向χ((+χ)方向以及（_χ)方向）之筒 狀’且具備多孔噴嘴32與中心處理嘴嘴33。多孔噴嘴32 ’、中。處理喷嘴33係沿基板w之排列方向χ而結合，且 :成為一體。亦即’構成為藉由從液供應管31將處理液壓 =二嘴二體30,以從多孔喷嘴32與中心處理喷 處理液朝基板W上面喷出之形態。 右滿t多喷嘴32係沿排列方向x以一列地以等間隔設 有複數個喷出管321。該等 接古白哈山一 寺噴出官321係分別構成為：為 所喷出之處理液的前進性而沿後述之嘖 出方向延設之細徑的圓筒形狀。藉此管 321喷出且在基板WJl 攸谷嘴出吕 聂θ Α, 耆液處理液之者液位置相互重 疊孔=止互相干擾。又，開設於喷出管 重 ==至^程度。因而，自液供應管二： 液壓送至噴嘴本體3〇時，自複數 处理 孔3仏將處理液一起 嘴出g 321之各個噴出The end of the heart side is rotated to be formed in the line relative to the base (four). According to the above configuration, since the (4) and (4) segments are arranged in a row in the direction in which the +-diameter direction is substantially parallel to the substrate, the processing liquid (column•=physical solution) is arranged in a row, so that the processing can be performed over a wide range. The time difference until the liquid is supplied to each of the upper portions of the substrate is at a minimum and the processing liquid can be supplied. Further, by satisfying the first condition, the direction (rotational radius direction) of the centrifugal force acting on each of the droplets of the treatment liquid constituting the liquid crystal on the substrate 318459 13 1313624 is different from each other. As a result, the processes of the treatment liquid (droplets) which are placed on the substrate are different from each other, and the treatment liquid on the substrate is uniformly dispersed. Further, by ejecting the treatment liquid in the rotation direction of the substrate, the treatment liquid on the substrate is extended in the discharge direction to the kneading side in the discharge direction. Therefore, the treatment liquid can be made to a larger extent with a small amount of the treatment liquid. The processing liquid which is located at the end portion on the rotation center side of the substrate among the columnar processing liquids which are placed on the substrate by the second condition is flowed toward the end edge side of the substrate through the rotation center of the substrate. Specifically, in addition to the force acting in the discharge direction from the discharge means, the reaction acts on the opposite direction to the rotation direction of the substrate accompanying the rotation of the substrate, and 2: the centrifugal force for the direction of the radius of rotation, The treatment liquid is supplied to the substrate + the core portion, and is discharged to the outside of the substrate while being dispersed. Thus, by satisfying the first! Further, in the second condition, the substrate _ center portion can be surely processed, and the processing liquid can be quickly supplied to the respective portions on the substrate by the miscellaneous processing liquid, and the substrate surface can be uniformly processed. As a result, the substrate can be uniformly treated with less treatment liquid without increasing the amount of the treatment liquid supplied onto the substrate. Herein, in order to suppress the waste of the treatment liquid and uniformly process the substrate, the ejection nozzle & a porous nozzle having a plurality of nozzle orifices arranged in a direction substantially parallel to the direction of the radius of rotation of the substrate is formed from the plural The form of each of the discharge treatment liquids of the nozzle outlet holes may also be used. Further, when the rectangular rectangular substrate is processed, it is preferable to set the length u in the direction in which the array processing liquid on the substrate is ejected from the ejection means to satisfy the following conditions. That is, L^Re . Sin0 + (wn/2) - where 'preferably set to: . the distance from the center of rotation of the four (four) substrate to the end of the rotation center side of the quadrilateral substrate of the ship treatment liquid , -~... a line segment connecting the center of rotation of the center of rotation of the quadrangular substrate and the end portion on the center of rotation of the quadruple-shaped substrate of the columnar processing liquid, and a line extending in the offset direction by the center of rotation of the quadrangular substrate Corner, the short side length of the Wii··· square substrate. According to the configuration as described above, the tetragonal shape of the rotation = the treatment liquid is surely liquid-carrying, and the treatment portion of the side edge side of the substrate ejected from the ejection means is cut by the squaring portion (four (four)) which can prevent the rotation of the square substrate Over. As a result, it is possible to prevent the positive treatment liquid from rebounding and to uniformly process the substrate. (Effect of the Invention) According to the present invention, the time difference until the processing liquid is supplied to the upper surface of the substrate over a wide range is stopped at the minimum (four) supply slit by discharging the processing liquid onto the substrate in a row. Further, the respective liquid-drawing positions of the treatment liquid constituting the liquid-like processing liquid on the substrate are shifted by a predetermined distance from the rotation radius line in the direction orthogonal to the rotation radius line, thereby facilitating the processing on the substrate. The liquid is evenly dispersed. Furthermore, the center of the substrate is reliably processed by supplying the processing liquid toward the center of the substrate. Therefore, the substrate can be surely processed, and the processing liquid can be quickly supplied to the upper portions of the substrate by the column-shaped processing liquid, and the entire surface of the substrate can be uniformly treated with a small amount of the processing liquid. [Embodiment] - <First Embodiment> Fig. 1 is a view showing a first embodiment of a substrate processing apparatus according to the present invention. The substrate processing apparatus supplies a chemical liquid such as dilute hydrofluoric acid as a processing liquid to a glass substrate w for LCD (hereinafter referred to as a substrate W) of a rectangular quadrangular substrate to form an undesired surface formed on the substrate w. A device for removing the film (not necessary). As shown in Fig. i, the apparatus includes: a substrate holding portion 丨 (substrate holding means) for holding the substrate W in a substantially horizontal posture; a rotary driving unit 2 for rotationally driving the substrate holding portion ;; and supplying the processing liquid to The liquid ejecting nozzle unit 3 held on the substrate w of the substrate holding portion}, the nozzle driving unit 4 for moving the liquid ejecting nozzle unit 3 in the vertical direction and the horizontal direction, and the cup for recovering the liquid from the substrate W ^ 5 'Storing the outer casing 6 of each unit of each device; and controlling the entire control unit (not shown). The substrate holding portion has a substrate cutting plate 11 having the same level as the substrate w, and is fixed on the substrate supporting plate U to support the lock 12 at the periphery of the peripheral portion of the cup two plate W; The substrate supporting surface supports the central portion of the lower portion of the substrate w to support the pin-shaped wax. The substrate holding portion 1 is configured to perform the sculpt processing to change resistance. The I rib pin 12 corresponds to the four (four) drop portion of the substrate w and the g L ! pin 12 is provided; the support substrate w from the lower side of the 荇 荇 〗 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 16 1313624 _ The guide ridges 122 of the movement of the base plate W of the Kwan Sang end are supported at four locations. Further, in Fig. 1, only two peripheral support pins 12 are shown to avoid the pin ^'. Also, the central branch is four. The number of the center support pins 13 disposed on the substrate supporting plate n is not limited to four in the center portion corresponding to the outer portion. • The lower end of the hollow end of the hollow cylinder shaft 21 is held by the upper end portion of the hollow cylinder shaft 21, and the end portion of the hollow shaft 21 is transmitted to transmit the rotational driving force of the motor 23 through the belt mechanism. Therefore, the substrate w of the substrate supporting plate 11 is rotated about the rotation. As described above, in this embodiment, the rotation driving unit 2 of the ?n belt mechanism 22 functions as the rotation driving means of the present invention. Further, the cylindrical shaft 21 is formed of a hollow cylindrical member, and is provided with a nozzle 16 along its center. Then, the liquid nozzle 16 is inserted through the liquid supply pipe (6), and the upper end of the liquid supply official 161 faces the lower central portion of the substrate w, and the chemical liquid or the cleaning liquid is used as the treatment liquid from the two t nozzle holes 162. The structure is formed near the center of rotation of the surface. Further, pure water or the like is used here as the cleaning liquid. Further, the cartridge shaft 2" extends toward the opening of the substrate supporting plate u, and the discharge port is opened on the upper side with respect to the substrate supporting plate u. Further, the gap between the cylinder shaft 2! and the nozzle nozzle 16 is formed by the flow regulating t-shirt and the piping 86 is opened to reduce the environment. Further, at the discharge port 17, gas from the outside environment is ejected from the gap between the side surface of the liquid nozzle 16 and the inner peripheral surface of the cylindrical shaft 21. Further, the end portion of the liquid nozzle 16 is formed in a τ-shaped shape of a section 318459 17 1313624, and a nozzle hole 162 for processing liquid is opened at a central portion of the flat upper surface. The liquid nozzle 16 is connected to the pipe 80. The base end portion of the pipe 80 is -2, the first branch pipe 80a is connected to the chemical liquid supply source 81, and the second branch pipe 80b is connected to the pure water supply source 82. Opening and closing valves 83a and 83b are provided in each of the branch pipes 8a and a, respectively. Then, the opening and closing valve 83b is opened by the opening/closing command from the control unit, and the opening and closing valve 83a is closed, whereby the cleaning liquid (pure water) is pumped to the liquid nozzle 16 via the pipe 80, and is moved from the nozzle hole 162 of the liquid nozzle 16 toward the substrate W. Available below. In addition, the opening and closing valve 83a is opened by the opening and closing command from the control unit, and the opening and closing valve 83b is closed, whereby the chemical liquid can be supplied from the nozzle hole 162 of the liquid nozzle 16 to the lower surface of the substrate w. Further, the gas supply path 163 is provided in the liquid nozzle 16^, and the lower end portion thereof is connected to the gas supply source 85 through the pipe 84 provided with the opening and closing valve 84a, and is connected from the upper end of the gas supply path 163. The space between the nozzle outlet pair and the lower surface of the substrate W can supply a clean gas such as a clean gas or a noble gas (nitrogen gas or the like). The processing Sr and the belt mechanism 22 are housed in a cylindrical casing 62 provided on the base member 61 as the substrate & plate. The outer shout 62 is connected to the tubular shaft 21 by the bearing 63 through the bearing 63. That is, the 〇 双 62 62 用 62 62 62 62 62 62 62 62 62 62 62 62 62 62 攸 攸 攸 攸 攸 攸 攸 攸 攸 攸 攸 攸 攸 攸 攸 攸 攸 攸 攸 攸 攸 攸 攸 攸 攸 攸 攸 攸 攸 攸 攸 攸. The upper and lower portions and the third portion are provided with a nozzle body 30, and the crucible body 3 is movably disposed above the substrate w held by the substrate supporting portion 318459 18 1313624 1 in the lower direction and the horizontal direction. In the fourth portion, the support arm 7 body 30 is attached to the front end of the support arm 7, and the nozzle drive unit 4 is coupled to the one end portion. By the 15th nozzle drive unit 4, it is possible to put the nozzle into a handle, which will be described later. (After April, when the nozzle body 3〇 is moved out, the base substrate transfer means (not shown) will be used. The substrate moving portion "two nozzles = between the retracted positions of the retreat. The horizontally moving nozzle body 3G of the nozzle drive and the support arm 7 are horizontally moved up and down in a horizontally movable manner, and the nozzle body 30 and the support arm 7 are made (4) The mm moving source 42° is driven by the material, and is driven to move up and down: the upper side and the driving source by the lifting and lowering: the discharging nozzle unit 3 and the liquid nozzle 16 side are selectively switched between the liquid medicine and the washing. The cleaning liquid is supplied to the substrate w. That is, the nozzle body 3 is connected to the liquid supply pipe 31, and is pumped to the nozzle by the energy supply pipe 31. The liquid is supplied from the liquid to the nozzle body 3()#方式 The method of holding the top surface of the substrate w of the base (4) is -, the chemical supply source 81 is connected to the first branch pipe 87a, and the pure water supply is connected to the second branch pipe 87b (4). The piping milk is provided with opening and closing ^8a, 88b, respectively, and is formed to open in response to an opening and closing instruction from the control unit. The opening and closing valve 88b closes the opening and closing valve, thereby supplying the cleaning liquid (pure water) from the nozzle body 3〇 toward the substrate. Further, the opening and closing valve 88a is opened in response to an opening and closing command from the control unit, and the opening and closing valve (4) is closed. Thereby, the chemical liquid can be supplied from the nozzle body 30 to the upper surface of the substrate. 318459 19 1313624 • Fig. 2 shows the structure of the liquid ejection nozzle portion and the substrate above the processing liquid sprayed from the liquid ejection nozzle The oblique view of the liquid-holding position, and the third drawing of the third embodiment are shown in Fig. 3. Specifically, the second and third figures show that the liquid ejecting nozzle portion 3 is positioned on the substrate W by the driving of the nozzle driving portion 4. At the processing position directly above, the processing liquid is ejected from the liquid ejecting nozzle portion 3 toward the upper surface of the substrate W at the processing position. The nozzle body 30 is configured to extend substantially parallel to the direction of the radius of rotation of the substrate w. The cylindrical shape of the direction χ ((+χ) direction and (_χ) direction) is arranged and the porous nozzle 32 and the central processing nozzle 33 are provided. The porous nozzle 32', the middle processing nozzle 33 is arranged along the direction of the substrate w. Combine and: become one. The configuration is such that the processing hydraulic pressure = the two nozzles 30 from the liquid supply pipe 31 is discharged from the porous nozzle 32 and the central processing spray liquid toward the upper surface of the substrate W. The right full t nozzle 32 is arranged along the arrangement direction x A plurality of discharge pipes 321 are provided at equal intervals in a row. The 321 series of the ejectors of the ancient Baihashan Temple are respectively configured to extend in the direction of the exit described later for the advancement of the discharged treatment liquid. The cylindrical shape of the small diameter is set. The tube 321 is ejected and the substrate WJ1 is 攸 θ θ Α Α Α Α Α Α Α Α Α Α 位置 位置 位置 位置 位置 位置 位置 位置 = = = = = = = = = = = = = = = = = = = = The pipe weight == to the degree of ^. Therefore, the liquid supply pipe 2: when the hydraulic pressure is sent to the nozzle body 3〇, the processing liquid is discharged from the nozzles g 321 from the plurality of processing holes 3

-列地將處理液供應至基板〜且沿排列方向X 上面。如上述，該實施形熊 318459 20 1313624 中’夕孔喷嘴32具有作為本發明之「第1喷出手段」作用。 另—方面，在中心處理喷嘴33係延設有噴出 .開設於噴出管331前端之喷出孔331a係朝向基板％之上 面中心（旋轉中心、A0)。因此，當自液供應管 ，至噴嘴本㈣時，自wa朝基板^走理轉夜中 心喷出處理液，而將處理液供應至基板w之中心部。 .如上述，該實施形態甲，中心處理喷嘴33 _ .之「第2噴出手段」作用。 有作為本發明 .帛4圖係用以說明自多孔喷嘴喷出之處理液之 孔喷嘴32之各嘴出管321噴出之處理液係沿 ί:向A’相對基板〜之上面從斜上方射入。 ::定為大：之上面與處理液之喷出方向F所形成之角α =上=;。係:t:，藉心處 轉之其板的Λ 用於與伴隨基板W之旋 轉之：板的旋轉方向A相反方向之反仙力、與作用 丨轉半徑方向之H但依循 、 擴展线噴出方U之前面側。 之喷出方向Η 出之處到第2圖及第3圖說明自多孔喷嘴32所喷 板W之旋=基板W上面的著液位置。在此，說明通過基 假想線之巾^AG延伸於基板旋轉半徑方向之任意 假相線作為^與喷嘴本體％之排列方向（X方向）平行之 自二嘖嘴3^^之線轉半徑線RL作為基準 線R L係為#认嘴處者液位置。在此，旋轉半徑 .....、；特定著液於基板貿上面之處理液的著液位 318459 21 1313624 •置而導入者，旋轉半徑線π本身係因應基板|與多孔喷 嘴32(排列方向X)之配置關係而任意假想描㈣，並非對 -應於基板W之位置而特定者。 自多孔喷嘴32喷出且構成著液於基板w上面之列狀 處理液之處理液（液滴）的各個著液位置，並非在旋轉半徑 線RL上，而在自旋轉半徑線RL上正交於旋轉半徑線rl 之偏移方向Y((+Y)方向以及（_幻方向）僅錯開預定距離 S1(以下稱為「偏移距離」）。亦即，以在自旋轉半徑線此 上朝Y方向僅錯開偏移距離S1之位置著液列狀處理液之 方式，自多孔噴嘴32喷出處理液。 又，列狀處理液之著液位置係於基板w之上面限定於 如下所述。亦即，以通過基板W之旋轉中心A〇延伸於γ 方向之線CL與旋轉半徑線RL將基板霄上面分割所規定 =四個象限W1至W4之中，將列狀處理液之著液位置限 疋在象限W2内之區域。此係由於沿上述之基板w之旋轉 鲁方向A相對於基板w上面噴出處理液之要求，以及為抑 制處理液之消耗量之故。即使如上所示限定列狀處理液之 著液位置，亦可使透過基板w之旋轉而著液之處理液擴 政，而與自中心處理喷嘴33所供應之處理液混合而處理基 板w之整體上面。另外，只要藉由中心處理噴嘴33處理 基板W之中心部’作成將自多孔噴嘴32所噴出之列狀處 理液之著液位置限定在象限W1内之區域亦可。 再者’著液於基板W上面之列狀處理液之X方向的 長度L1 ’以成為基板w之短邊長度Wn的一半以下之方 22 318459 1313624 式’自多孔喷嘴32噴出處理液。如上述，藉由規定列狀處 理液之長度L1，成為可對旋轉之基板w上面使列狀處理 -液確實地著液。 接著’說明如上述所示構成之基板處理裝置之動作。 在此’說明將稀氫氟酸等藥液作為處理液供應至保持於基 板保持部1之基板W，以將不想要形成在基板W上面之薄 膜進行姓刻去除之情況。 • 藉由基板搬運手段將未處理之基板W搬入至裝置 内’且當保持於基板保持部1時’藉由噴嘴驅動部4之驅 動將噴嘴本體30從退避位置移動至處理位置。保持於基板 保持部1之基板W係藉由將馬達23驅動，以預定之旋轉 速度繞著基板W之旋轉中心A0旋轉。如上述之蝕刻處理 中’基板W之旋轉速度係設定為大約5〇至2〇〇rpm，最好 设定為50至150rpm。 接著，自喷嘴本體30朝基板W上面喷出藥液。具體 鲁而言，自多孔噴嘴32對基板W上面沿基板w之旋轉方向 A從斜上方以列狀（一列地）將藥液喷出，並且自中心處理 喷嘴33朝基板w上面之旋轉中心A0將藥液喷出。構成 自多孔喷嘴32所喷出之列狀藥液之各藥液（液滴）係於基板 W上面，著液在自旋轉半徑線rl於（+γ)方向僅錯開偏移 .距離S1之位置。在此，在基板界為所謂第4代（基板尺寸： -730mmx920mm)之玻璃基板時，從處理均勻性之觀點來 看’偏移距離S1係設定為大約40mm至60mm較適當。當 然’偏移距離S1係因應成為處理對象之基板尺寸設定為 318459 23 1313624 適當、適切的距離。 上面二5=自多孔嘴嘴所嘴出且作用於著液在基板 之向之模式圖。構成著液於基…面 板Γ之ΓΓ/Λ液（液滴）係沿追隨合成有⑴作用於與基 之友轉方向a相反方向之反作用力frm (2)作用於旋轉半徑方向之離心力fc、fc _ n _盾旋轉方向A之喷出方向F之；二 r:r?力之大小流動於基板〜上面，且排出』基板 線RL上時構成列狀藥液之各藥液著液於旋轉半徑 之方⑽鑪：成列狀藥液之各藥液（液滴）之離心力 方向咏轉半徑方向）皆成為相同方向。另一方面 ΙΓ;方構成列狀藥液之各藥液自旋轉心 離 力而著液’作用於構成列狀藥液之各藥液之 不0之方1 C2 fcn之方向（旋轉半捏方向）係成為互為 不二之方向。結果，著液於基板w上面之後的藥 之軌:互為不同、，而促進基板W上面的藥液均勻'分散。^- The column supplies the treatment liquid to the substrate ~ and is arranged above the alignment direction X. As described above, the "head hole nozzle 32" of the present type bear 318459 20 1313624 functions as the "first discharge means" of the present invention. On the other hand, the center processing nozzle 33 is provided with a discharge. The discharge hole 331a opened at the tip end of the discharge pipe 331 faces the center of the upper surface of the substrate (rotation center, A0). Therefore, when the liquid supply pipe is supplied to the nozzle (4), the treatment liquid is ejected from the wa toward the substrate, and the treatment liquid is supplied to the center portion of the substrate w. As described above, in the embodiment A, the "second discharge means" of the center processing nozzle 33_. functions. As a result of the present invention, the 帛4 pattern is used to explain that the processing liquid discharged from the nozzles 321 of the orifice nozzles 32 of the processing liquid ejected from the porous nozzles is directed obliquely upward toward the upper surface of the A' opposite substrate. In. :: is set to be large: the angle formed by the upper surface and the discharge direction F of the treatment liquid is α = upper =; :: t:, 借 处 处 Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Square U before the side. The discharge direction of the discharge direction is shown in Figs. 2 and 3 to illustrate the position of the liquid on the upper surface of the substrate W from the nozzle W of the porous nozzle 32. Here, it is explained that any false phase line extending in the direction of the radius of rotation of the substrate by the base imaginary line ^AG is parallel to the line direction radius RL of the two nozzles 3^^ which is parallel to the arrangement direction (X direction) of the nozzle body %. As the reference line RL, the position of the liquid is ##. Here, the radius of rotation .....;; the liquid level of the treatment liquid which is specific to the substrate trade surface 318459 21 1313624 • The introducer, the rotation radius line π itself is the corresponding substrate | and the porous nozzle 32 (arranged) The arrangement relationship of the direction X) and the arbitrary hypothesis (4) are not specific to the position of the substrate W. The respective liquid-drawing positions of the treatment liquid (droplets) which are ejected from the porous nozzle 32 and constitute the liquid-like treatment liquid on the substrate w are not orthogonal to the rotation radius line RL but orthogonal to the rotation radius line RL. In the offset direction Y ((+Y) direction and (_ magic direction) of the rotation radius line rl, only the predetermined distance S1 (hereinafter referred to as "offset distance") is shifted by the predetermined distance S1 (hereinafter referred to as "offset distance"). The processing liquid is ejected from the porous nozzle 32 by shifting the liquid-column processing liquid at a position shifted by the distance S1 in the Y direction. The liquid level of the column-shaped processing liquid is limited to the upper surface of the substrate w as follows. That is, the liquid level of the column-shaped processing liquid is defined by dividing the upper surface of the substrate by the line CL extending in the γ direction from the rotation center A of the substrate W and the radius of curvature line RL = four quadrants W1 to W4. It is limited to the region in the quadrant W2. This is due to the requirement that the processing liquid is ejected from the rotation direction A of the substrate w described above with respect to the substrate w, and the consumption of the treatment liquid is suppressed. The position of the liquid of the treatment liquid can also be transmitted through the substrate w The liquid processing liquid is expanded and mixed with the processing liquid supplied from the center processing nozzle 33 to process the entire upper surface of the substrate w. Further, the central portion of the substrate W is processed by the central processing nozzle 33. The position of the liquid of the column-shaped processing liquid discharged from the porous nozzle 32 may be limited to the region in the quadrant W1. Further, the length L1' in the X direction of the column-shaped processing liquid on the substrate W is formed to become the substrate w. The short side length Wn is less than half of the length 22 318459 1313624 The formula "sprays the processing liquid from the porous nozzle 32. As described above, by specifying the length L1 of the column-shaped processing liquid, the substrate can be aligned on the rotating substrate w - Next, the operation of the substrate processing apparatus configured as described above will be described. Here, a description will be given of supplying a chemical liquid such as dilute hydrofluoric acid as a processing liquid to the substrate W held by the substrate holding portion 1 to It is not desirable to form a film on the substrate W to be removed by a surname. • The unprocessed substrate W is carried into the device by the substrate transfer means and is held by the nozzle when it is held in the substrate holding portion 1 The driving of the portion 4 moves the nozzle body 30 from the retracted position to the processing position. The substrate W held by the substrate holding portion 1 is rotated around the rotation center A0 of the substrate W at a predetermined rotational speed by driving the motor 23. In the etching process, the rotational speed of the substrate W is set to about 5 Torr to 2 rpm, preferably 50 to 150 rpm. Next, the liquid medicine is ejected from the nozzle body 30 toward the upper surface of the substrate W. The liquid medicine is ejected from the porous nozzle 32 to the upper surface of the substrate W in the rotation direction A of the substrate w from obliquely upward in a row (in a row), and the liquid medicine is sprayed from the center processing nozzle 33 toward the rotation center A0 on the substrate w. Each of the chemical liquids (droplets) constituting the liquid chemical discharged from the porous nozzle 32 is attached to the upper surface of the substrate W, and the liquid is shifted only in the (+γ) direction from the rotation radius line rl. The distance S1 The location. Here, when the substrate boundary is a so-called fourth-generation (substrate size: -730 mm x 920 mm) glass substrate, it is appropriate to set the offset distance S1 to be about 40 mm to 60 mm from the viewpoint of uniformity of processing. Of course, the 'offset distance S1' is set to a suitable and appropriate distance for the substrate size to be processed to be 318459 23 1313624. The above two 5 = a pattern from the mouth of the porous nozzle and acting on the substrate in the direction of the substrate. ΓΓ 于 于 Γ Γ Γ Γ Γ 液滴 液滴 液滴 液滴 液滴 液滴 液滴 液滴 液滴 液滴 液滴 液滴 液滴 液滴 液滴 液滴 液滴 液滴 液滴 液滴 液滴 液滴 液滴 液滴 液滴 液滴 液滴 液滴 液滴 液滴 液滴 液滴 液滴 液滴 液滴 液滴 液滴 液滴 液滴 液滴 液滴 液滴 液滴 液滴 液滴 液滴 液滴 液滴 液滴Fc _ n _ Shield rotation direction A in the discharge direction F; two r: r? force flow on the substrate ~ above, and discharge the "substrate line RL" when forming the liquid medicine of the liquid medicine on the rotation The square of the radius (10) furnace: the liquid medicines (droplets) of the liquid medicines in the direction of the centrifugal force are in the same direction. On the other hand, the liquid medicines of the column-shaped liquid medicine are separated from the core by the force of the liquid and act on the non-zero side of each of the liquid medicines constituting the liquid medicine (the direction of the rotation of the half pinch direction) The system has become the direction of mutual change. As a result, the tracks of the medicine after the liquid on the substrate w are different from each other, and the liquid medicine on the substrate W is uniformly dispersed. ^

液，因:著:二二基板w之旋轉方向A自斜上方噴出藥 I,出= 面之藥液係沿依循旋轉方向A 液，即能使藥液均勾分散至更廣範圍，且能使； 均二Μ面之各部之每單位面積之藥液的供應量之 U面再者，相對於垂直地將藥液喷出至基板 喷出且著下之有利效果。亦即，朝基板〜上面 、 土 上面之藥液’能抑制與已供應至基板 318459 24 1313624 .w上面之藥液之干擾。例如，由於著液於基板…上面之藥 液，與伴隨著基板w之旋轉附著於移動至著液位置之基板 w上面之藥液之衝突，藥液之液面會在基板w上面隆起， 而有使蝕刻處理之均勻性惡化之情況，但能防止如上 現象發生。 又，由於者液於基板w上面之列狀藥液的排列方向（χ 方向）之長度L1 ’成為四角形基板之基板w的短邊長度 Wn之一半以下，因此能確實地使列狀藥液著液於旋轉之 ，板W上面。藉此，能獲得以下之效果。亦即，當將列狀 藥液之X方向的長度L1作成比四角形基板之短邊長度 的一半要長時，伴隨基板w之旋轉，產生自多孔喷嘴32 喷出之列狀藥液之中基板w之端緣侧之藥液的一部分未 供應至基板w上面之狀態（例如列狀藥液之排列方向X與 基板y之短邊方向成為平行時）。當基板w自該狀態更加 方疋轉日7 ’基板w之角落部(四個角落)自側邊將自多孔喷嘴 喷出之基板w的端緣側之藥液切過，產生藥液之反彈。 因此’如上述所示藉由使列狀藥液確實地著液於基板W上 面，可防正藥液反彈，並能將基板^行均句地钱刻處理。 ”如以上所示，根據本實施形態，自具有複數個喷出孔 处la之多孔喷嘴32沿排列方向χ以列狀嘴出藥液，因此 此遍及較大範圍使藥液同時著液於基板w上面。因而，能 •將藥液供應至基板臀上面之久 土极W上面之各部為止之時間差止於最小 t且能將預定量之藥液供應至基板w上面之各部。 又根據本實施形態，將構成列狀藥液之各藥液的著 318459 25 1313624Liquid, because: the rotation direction of the two substrates w is ejected from the obliquely above, and the liquid of the surface is along the direction of rotation A, which can spread the liquid to a wider range, and The U surface of the supply amount of the chemical liquid per unit area of each of the uniform surfaces is further advantageous in that the chemical liquid is discharged to the substrate vertically and is discharged. That is, the chemical solution ' on the substrate to the top and above the soil can suppress interference with the chemical liquid supplied to the substrate 318459 24 1313624 .w. For example, since the liquid chemical on the substrate is collided with the chemical solution attached to the substrate w that has moved to the liquid-holding position along with the rotation of the substrate w, the liquid level of the chemical liquid rises above the substrate w, and There is a case where the uniformity of the etching treatment is deteriorated, but the above phenomenon can be prevented from occurring. In addition, since the length L1' of the alignment direction (χ direction) of the liquid medicine on the substrate w is one-half or less of the short side length Wn of the substrate w of the square substrate, the column-shaped liquid medicine can be surely made The liquid is rotated, above the plate W. Thereby, the following effects can be obtained. In other words, when the length L1 of the columnar chemical solution in the X direction is longer than half the length of the short side of the rectangular substrate, the substrate is ejected from the porous liquid material 32 in association with the rotation of the substrate w. A part of the chemical liquid on the edge side of w is not supplied to the upper surface of the substrate w (for example, when the alignment direction X of the column-shaped chemical liquid is parallel to the short side direction of the substrate y). When the substrate w is further turned from this state, the corner portion (four corners) of the substrate 7' is cut from the edge of the substrate w which is ejected from the porous nozzle from the side, thereby generating a rebound of the liquid medicine. . Therefore, as described above, by causing the liquid medicine to be surely immersed on the upper surface of the substrate W, it is possible to prevent the positive liquid from rebounding, and it is possible to treat the substrate in a uniform manner. As described above, according to the present embodiment, since the porous nozzles 32 having a plurality of discharge holes are arranged in the array direction, the liquid medicine is discharged in a row, so that the liquid medicine is simultaneously immersed in the substrate over a wide range. w. Therefore, the time difference between the supply of the chemical liquid to the upper portions of the long earth W on the substrate buttocks is stopped at a minimum t and a predetermined amount of the chemical liquid can be supplied to each of the upper portions of the substrate w. Morphology, which will constitute each of the liquid medicines of the column liquid 318459 25 1313624

.，位置，自旋轉半徑線RL·上沿正交於旋轉半徑線RL之偏 移方向Y僅錯開預定之距離（偏移距離）S1。結果，著液於 基板w上面之藥液（液滴）之軌跡互為不同，而促進基板w 上面的藥液均勾分散。再者’由於沿基板W之旋轉方向a 喷出藥液，因此著液於基板W上面之藥液係沿噴出方向F -而，展至該喷出方向F之前面側，而以少量之藥液，即能 -使藥液均勻地分散至更大範圍。 此 φ 又，根據本實施形態，由中心處理喷嘴33朝基板w 之旋轉中心AO噴出藥液。因此’即使無法將由多孔噴嘴 噴出且著液於基板w上面之藥液充分供應至基板貨之 旋轉中心A0，或者著液於基板冒上面之藥液之軌跡脫離 基板W之方疋轉中心A0時，可藉由由中心處理喷嘴％所 喷出之藥液，將基板冒之+心部確實地進行蝕刻處理。 如上述，根據本實施形態，雖藉由由中心處理噴嘴33 所喷出之藥液，將基板冒之中心部確實地進行蝕刻處理， 籲亦能藉由由多孔喷嘴32喷出之列狀藥液迅速地將藥液供 應至基板W上面之各部，且能將基板貿上面均勻地進行 ，刻處理。因而，不用增加供應至基板臀上面之藥液的 量，而能以少量之藥液即可使基板w上面整體均勻地進行 钱刻處理。 &lt;第2實施形態&gt; 第6圖係顯示本發明基板處理裝置之第2實施形態的 圖。又，第7圖係第6圖之基板處理裝置的主要部位放大 圖。該第2實施形態與第i實施形態最大的不同點係在， 318459 26 1313624 以僅自多孔喷嘴供應之藥液對基板w上面施行韻刻處理 之點，為進行如上述之處理而變更自多孔噴嘴噴出且著液 於基板w上面之藥液的著液位置。另外，其他之構成係基 本上與第1實施形態相同，以τ_面與第〗實施形態對比， 一面詳述第2實施形態之特徵。 該第2實施形態之基板處理裝置所採用之喷嘴本 係僅由多孔噴嘴34(相當於本發明之「嘴出手段」）構成， 其構成係與在第i實施形態使用之多孔嗔嘴％同樣。 '，在多孔喷嘴34係沿排列方向（χ方向卜列地以等間隔 延设有複數個喷出管341，且以自各喷，出管34ι之喷 341af基板W上面自斜上方喷出藥液之方式構成。又， 構成者液於基板W上面之列狀藥液之藥液的各個著液位 置以在偏移方向（Y方向）僅錯開肢之距離（偏移距離 方^自多孔喷嘴34喷出藥液。另外，有關偏移距離s2, 從樂液之均勻分散，並且將藥液確實供應至基板W之中心 觀點來看，亦考量基板w之旋轉速度等而適當地加= 另一方面，於第1實施形態中，以通過基板W之旋轉 中心A0延伸於γ方向之線CL與旋轉半徑線rl，將基板 W上面分割所規定之四個象限W1至W4之中，雖將列狀 藥液之著液位置限定在象限W2内之區域，但該第2實施 形態中，係使列狀藥液之一部分著液在象限W3内之區 域。亦:，以構成著液於基板W上面之列狀藥液之藥液（液 滴）的著液位置滿足以下之第丨及第2條件之方式，自多孔 318459 27 1313624 喷嘴34噴出藥液（第7圖）。 第1條件：從旋轉半徑線RL中相對於基板w之旋轉 中心A〇延伸於一方側（+X方向）之線上，於Y方向在與基 板W之旋轉方向A相反之方向僅錯開預定之距離（偏移距 離）S2。亦即，從旋轉半徑線RL中相對於基板w之旋轉 中心A0延伸於+χ方向之線上，於+γ方向僅錯開偏移距 離S2。 第2條件·相對於通過基板w之旋轉中心Α〇延伸於 Υ方向之線CL而言列狀藥液之著液位置在基板w之旋轉 中心侧的端部Pe’係位於旋轉半徑線RL中相對於基板W 之旋轉中心A0之另一方側（_χ方向）。 如上述，藉由使列狀藥液著液，藉由基板W之旋轉， 列狀藥液之中位於基板旋轉中心側之端部卜的藥液 係-面通過基板|之旋轉中心A〇，一面流往基板^之端 緣侧。具體而言，在位於基板w之旋轉中心側之端部卜 籲的藥液’除作用於喷出方向之力之外，作用於與基板1之 旋轉方向A相反方向之反作用力、與作用於旋轉半捏方向 之離心力作動’追隨該等之合力將藥液供應至基板1之中 心部，且一面分散一面排出至基板外。 在此，將自基板W之旋轉中心A〇到列狀藥液之基板 —:之㈣中㈣之端部著液位置以為止之距離設為以， 1連接基板W之旋轉中心AG與列狀藥液之基板w之旋轉 ^側之端部城位置Pe之線段、與通過基板 中心A〇延伸於¥方向之線CL所構成之角設為Θ時，| 318459 28 1313624 .當於Re· 5ίηθ之長度成為列狀藥液之著液位置自象限W2 往象限W3移位之量。如上述之移位量（相當於尺^ sin0 之長度）係考慮偏移距離S2、基板W之旋轉速度、基板w 上面之狀態、以及所使用之藥液的表面張力之大小等諸條 件，以著液於象限W3内之藥液通過基板w之旋轉中心 A0之方式設定。 又，著液於四角形基板w上面之列狀藥液之排列方向 (X方向）的長度L2為以下之不等式，亦即， ^ Re · sin 6*+(Wn/2) 其中，以滿足Wn.&quot;四角形基板之短邊的長度之方 j，自多孔喷嘴34喷出處理液。如上所示，藉由規定列狀 藥液之長度L2,可使列狀藥液確實地著液於旋轉之基板w 上面。藉此，能防止所旋轉之基板霄之角落部（四個角落） 將自多孔喷嘴34喷出之基板w之端緣侧之藥液切過。结 果’可防止藥液反彈，且可將基板w均勾地進行姓刻處理°。 如以上所不，根據本實施形態，由於與第丨實施形態 同樣地，藉由多孔喷嘴34沿與基板臀之旋轉半徑方向^ 致平行的排列方向X以列狀喷出藥液（列狀藥液），因此可 遍及較大範圍將藥液供應至基板w上面之各部為止之時 間差止於最小限而供應藥液。 又，根據本實施形態，藉由滿足上述第1條件，能獲 得與第|實施形態相同之作用效果。亦即，.著液於基板〇 上面之藥液（液滴）之軌跡互為不同，促進基板％上面的藥 液均勻分散。再者’藉由沿基板w之旋轉方向A喷出藥 318459 29 1313624 液者液於基板w上面之藥液係沿嘖出方 ^ ^ ^ 貫出方向擴展至該喷出 方向之刖面側，且以少量之藥液，即能 φ ^ m 丨月b使樂液均勻分散至 更大範圍。 —又，根據本實施形態，#由滿足上述第2條件，能將 著液於基板W上面之列狀藥液之中位於基板|之旋轉中 心側之端部Pe之藥液供應至基板w之中心部，且能將基 板W之中心部進行蝕刻處理。 土 因而’藉由滿足第1及第2條件，確實地處理基板w 之中心部，亦能透過_藥料速地將藥液供應至基板w ^面之各部’且可將基板wji面均勾地進行關處理。結 不用增加供應至基板w上面之藥液的^，而以少量的 :液即能將基板W均勻地進行處理。並且，因未設置中心 处理用之喷嘴’並於自各喷出管341以同一條件喷出藥 液，故可將蝕刻處理之均勻性更加提高。 〈其他&gt; •、另外’本發明並非為限定於上述之實施形態者，只要 未脫離該主旨除上述情況之外能進行各種之變更。例如上 述第1實施形態中’ ☆噴嘴本體30設有多孔喷嘴32與中 。處理喷嘴33’且將多孔噴嘴32與中心處理喷嘴33 一體 =構成，但未㈣於此。例如第8圖所示，肖多孔喷嘴32 刀開而將中心處理噴嘴35另外設置，將多孔噴嘴32與 中心處理喷嘴35個別設置亦可（第3實施形態）。藉由如上 述之構成，一面確貫地處理基板W之中心部，無關中心處 理噴嘴35之配設位置’而可因應處理内容而自如地變更自 30 318459 1313624 多孔喷嘴32噴出之處理液的喷出方向、及列狀處理液之著 液位置等處理參數。 又’上述實施形態中，自多孔噴嘴32、34對基板W 上面自斜上方噴出處理液（列狀處理液），但處理液之喷出 方向係任思。例如對基板w上面垂直地喷出處理液亦可。 即使如上述構成，列狀處理液之著液位置只要自旋轉半徑 線RL上於偏移方向Y錯開，著液於基板W之處理液（液 滴）之軌跡會互為不同，而促進處理液均勻分散。因而，以 ^量的處理液即能使基板W上面整體均勾地進行處理。此 牯，由於基板W之旋轉方向A與噴出方向係呈正交關係， 因此並未將列狀處理液之著液位置限定在通過基板w之 旋轉中心A0以延伸於γ方向之線^與旋轉半徑線虹將 基板w上面分割所規定之四個象限W1至w4之任一象限。 又，上述實施形態中，雖作成於多孔喷嘴32,34沿X 方向（排列方向）一列地配設複數個噴出管，並自複數^各 .喷出管噴出且著液於基板w上面之各處理液之著液位置 -列地排列之形態，但處理液之排列形狀並非限定於此。 例如，自複數之各喷出管喷Μ著液於基板w 理液的著液位置，以於Y方向（偏移方向）互為不同之方处 2以弓狀或交互狀沿排列方^排列之形態，變更多孔 噴鳴之構成亦可。總之，自複數之各喷出管嗔出且著液於 基板w上面之各處理液的著液位置以互不干擾之ρ =排列方向狀喷出處理液，多孔噴嘴之構錢ς 318459 31 1313624 又，上述實施形態中， 複數個噴出管喷出處理液，藉曰此：將::二嘴32,之 板W，但並未限定於此。例如=狀處理液供應至基 —列方向X以列狀配置，藉 個噴出喷嘴個別沿排 列狀處理液供應至基板w亦可。冑嘴噴出處理液，將 又，上述實施形態中，在多孔 數個喷出管，但不設置複數個喷出管嘴而2在:延設有複 列方向X穿設複數個噴出孔亦可。 ㈣；=嘴’使用以延伸於拼列方向X之方式開口之開 又 ^形@中，雖說明將稀氫氟料藥液供應 基板❹對基板w施行似彳處理之情況，但基板處理 之内容並未㈣於此。例如，使用純水等洗淨液作為處理 液’-面對該洗淨液賦予超音波振動一面以列狀將洗淨液 供應至旋轉之基板W，並對基板貿施行洗淨處理之裝置亦 月色適用本發明。 (產業上之可利用性） 本發明係可適用於一面旋轉包含半導體晶圓、液晶顯 示裝置用玻璃基板、PDP(電漿顯示器面板）用基板、或磁碟 用玻璃基板及陶瓷基板等各種基板一面將處理液供應至該 基板’而對基板施行預定處理之基板處理裝置及基板處理 方法。 【圖式簡單說明】 第1圖係顯示本發明基板處理裝置之第1實施形態的 32 318459 1313624 圖。 第2圖係顯示液喷出喷嘴部之構成及自液噴出噴嘴部 喷出之處理液之基板上面的者液位置的斜視圖。 第3圖係顯示液喷出喷嘴部之構成及自液噴出噴嘴部 喷出之處理液之基板上面的著液位置的俯視圖。、° 第4圖係用以說明自多孔喷嘴所喷出之處理液之噴出 方向的圖。 « 5圖係顯示自多孔喷嘴喷出而作用於著液於基板上 面之藥液之力的方向之模式圖。 第6圖係顯示本發明之基板處理裝置之第2實施形態 的圖。 第7圖係第6圖之基板處理裝置的主要部位放大圖。 第8圖係顯示本發明之基板處理裝置之第3實施形態 的圖。 【主要元件符號說明】The position, the rotation radius line RL·the upper edge is shifted by the predetermined distance (offset distance) S1 from the deflection direction Y orthogonal to the rotation radius line RL. As a result, the trajectories of the liquid chemicals (droplets) which are placed on the substrate w are different from each other, and the liquid medicine on the substrate w is promoted to be dispersed. In addition, since the chemical liquid is ejected along the rotation direction a of the substrate W, the liquid chemical liquid on the substrate W is spread in the discharge direction F- to the front side of the discharge direction F, and a small amount of medicine is used. Liquid, that is, can - evenly disperse the drug solution to a larger extent. Further, according to the present embodiment, the center processing nozzle 33 discharges the chemical solution toward the rotation center AO of the substrate w. Therefore, even if the liquid medicine sprayed from the porous nozzle and liquid on the substrate w is not sufficiently supplied to the rotation center A0 of the substrate, or the trajectory of the liquid medicine on the substrate is separated from the center A0 of the substrate W The substrate can be reliably etched by the liquid chemical sprayed from the center processing nozzle %. As described above, according to the present embodiment, the center portion of the substrate is reliably etched by the chemical liquid discharged from the central processing nozzle 33, and the medicated material can be ejected by the porous nozzle 32. The liquid rapidly supplies the chemical solution to each portion of the upper surface of the substrate W, and the substrate can be uniformly processed and etched. Therefore, the amount of the chemical liquid supplied to the upper surface of the substrate is not increased, and the entire surface of the substrate w can be uniformly processed with a small amount of the chemical liquid. &lt;Second Embodiment&gt; Fig. 6 is a view showing a second embodiment of the substrate processing apparatus of the present invention. Further, Fig. 7 is an enlarged view of a main part of the substrate processing apparatus of Fig. 6. The second embodiment differs greatly from the i-th embodiment in that 318459 26 1313624 is subjected to rhyme processing on the substrate w only by the chemical liquid supplied from the porous nozzle, and is changed from the porous layer to the above-described treatment. The nozzle is ejected and is placed on the liquid level of the liquid medicine on the substrate w. In addition, the other configurations are basically the same as those of the first embodiment, and the features of the second embodiment are described in detail with respect to the τ_plane and the first embodiment. The nozzle used in the substrate processing apparatus according to the second embodiment is constituted only by the porous nozzle 34 (corresponding to the "nozzle means" of the present invention), and the configuration is the same as that of the porous nozzle used in the i-th embodiment. . 'In the porous nozzle 34, a plurality of discharge pipes 341 are arranged at equal intervals in the direction of the arrangement, and the liquid medicine is sprayed from the upper side of the sprayed 341af substrate W from the respective sprays. In addition, the respective liquid-holding positions of the chemical liquids of the liquid medicine on the substrate W are shifted by the distance of the limbs in the offset direction (Y direction) (offset distance from the porous nozzle 34) In addition, regarding the offset distance s2, from the viewpoint of the uniform dispersion of the liquid and the supply of the liquid to the substrate W, the rotation speed of the substrate w is also taken into consideration and appropriately added = another In the first embodiment, the upper surface of the substrate W is divided into four predetermined quadrants W1 to W4 by a line CL extending in the γ direction from the rotation center A0 of the substrate W and a rotation radius line rl. The position of the liquid of the drug solution is limited to the region in the quadrant W2. However, in the second embodiment, a portion of the column drug solution is partially filled in the quadrant W3. The liquid position of the liquid medicine (droplet) of the above-mentioned liquid medicine is satisfied In the third and second conditions, the liquid medicine is ejected from the nozzles 34 of the porous 318459 27 1313624 (Fig. 7). The first condition: extending from the rotation center line RL to the one side of the rotation center A of the substrate w ( On the line of the +X direction, in the Y direction, the predetermined distance (offset distance) S2 is shifted in the direction opposite to the rotation direction A of the substrate W. That is, the rotation center A0 from the rotation radius line RL with respect to the substrate w. The line extending in the +χ direction is shifted by the offset distance S2 in the +γ direction. The second condition is the position of the liquid of the liquid medicine with respect to the line CL extending through the center of rotation of the substrate w and extending in the x direction. The end portion Pe' on the rotation center side of the substrate w is located on the other side (_χ direction) of the rotation center line A1 with respect to the rotation center A0 of the substrate W. As described above, by aligning the column-shaped liquid medicine, When the substrate W is rotated, the liquid chemical system-side of the end portion of the column-shaped chemical liquid located on the rotation center side of the substrate passes through the rotation center A of the substrate|seat, and flows to the end edge side of the substrate ^. Specifically, In the end of the substrate w on the side of the center of rotation w In addition to the force acting in the discharge direction, the reaction force acting in the direction opposite to the rotation direction A of the substrate 1 and the centrifugal force acting in the direction of the rotation half pinch act to follow the force to supply the liquid medicine to the center of the substrate 1. The portion is discharged to the outside of the substrate while being dispersed. Here, the distance from the center of rotation of the substrate W to the substrate at the end of the fourth (4) of the substrate of the column-shaped chemical liquid is set to When the angle between the line center segment Pe of the rotation center AG of the connection substrate W and the end portion of the substrate w of the substrate liquid of the column-shaped chemical liquid and the line CL extending through the substrate center A ¥ is set to Θ , | 318459 28 1313624. When the length of Re· 5ίηθ becomes the amount of displacement of the liquid-like liquid from the quadrant W2 to the quadrant W3. The above-described shift amount (corresponding to the length of the ruler sin0) is such that the offset distance S2, the rotational speed of the substrate W, the state of the substrate w, and the surface tension of the chemical liquid used are considered. The liquid medicine in the quadrant W3 is set by the rotation center A0 of the substrate w. Further, the length L2 of the alignment direction (X direction) of the liquid medicine liquid on the tetragonal substrate w is the following inequality, that is, ^ Re · sin 6* + (Wn / 2) where Wn. &quot; The length j of the short side of the quadrangular substrate, the processing liquid is ejected from the porous nozzle 34. As described above, by defining the length L2 of the column-shaped chemical liquid, the column-shaped chemical liquid can be surely immersed on the rotating substrate w. Thereby, it is possible to prevent the corner portion (four corners) of the rotated substrate 切 from cutting the liquid medicine on the edge side of the substrate w ejected from the porous nozzle 34. The result 'can prevent the liquid medicine from rebounding, and the substrate w can be subjected to a surname treatment. As described above, according to the present embodiment, in the same manner as in the third embodiment, the porous nozzles 34 are ejected in a row in the array direction X parallel to the direction of the radius of rotation of the substrate hips. Since the liquid is supplied to the respective portions of the substrate w over a wide range, the chemical solution can be supplied with a minimum time limit. Further, according to the present embodiment, by satisfying the first condition described above, the same operational effects as those of the first embodiment can be obtained. That is, the trajectories of the liquid medicine (droplets) which are placed on the substrate 〇 are different from each other, and the liquid medicine on the substrate is promoted to be uniformly dispersed. Furthermore, the liquid medicine which is sprayed on the substrate w by the medicine 318459 29 1313624 in the direction of rotation A of the substrate w is expanded in the direction of the exiting direction to the side of the ejection direction. And with a small amount of liquid, that is, φ ^ m 丨 month b to make the liquid evenly dispersed to a larger extent. In addition, according to the second embodiment, the liquid medicine which is located on the end portion Pe of the rotation center side of the substrate|seat in the liquid chemical liquid on the substrate W can be supplied to the substrate w. The center portion and the center portion of the substrate W can be etched. Therefore, by satisfying the first and second conditions, the center portion of the substrate w can be reliably processed, and the liquid medicine can be supplied to the respective portions of the substrate by the medicinal material quickly, and the substrate wji can be hooked. The ground is closed. The substrate is not required to be added to the liquid chemical supplied onto the substrate w, and the substrate W can be uniformly treated with a small amount of liquid. Further, since the nozzle for center processing is not provided and the liquid is ejected under the same conditions from the respective discharge tubes 341, the uniformity of the etching treatment can be further improved. <Others> and the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit and scope of the invention. For example, in the first embodiment, the nozzle body 30 is provided with a porous nozzle 32 and a middle portion. The nozzle 33' is treated and the porous nozzle 32 is integrated with the central processing nozzle 33, but it is not (four). For example, as shown in Fig. 8, the microporous nozzle 32 is opened and the central processing nozzle 35 is separately provided, and the porous nozzle 32 and the central processing nozzle 35 may be separately provided (third embodiment). According to the configuration described above, the center portion of the substrate W is processed satisfactorily, and the processing position of the central processing nozzle 35 is irrelevant, and the processing liquid sprayed from the porous nozzle 32 of 30 318459 1313624 can be freely changed in accordance with the processing contents. Processing parameters such as the direction of the exit and the position of the liquid of the columnar treatment liquid. Further, in the above-described embodiment, the processing liquid (column processing liquid) is ejected from the upper surface of the substrate W from the porous nozzles 32 and 34 from the obliquely upward direction, but the direction in which the processing liquid is ejected is not considered. For example, the treatment liquid may be sprayed vertically on the upper surface of the substrate w. According to the above configuration, the position of the liquid of the columnar processing liquid is shifted from the rotation radius line RL in the offset direction Y, and the trajectories of the treatment liquid (droplet) that is immersed in the substrate W are different from each other, and the treatment liquid is promoted. Disperse evenly. Therefore, the entire surface of the substrate W can be treated with a uniform amount of the treatment liquid. In this case, since the rotation direction A of the substrate W is orthogonal to the discharge direction, the position of the column-shaped treatment liquid is not limited to the line extending through the rotation center A0 of the substrate w to extend in the γ direction. The radius line rainbow divides the substrate w above any one of the four quadrants W1 to w4 specified by the substrate. Further, in the above-described embodiment, a plurality of discharge pipes are disposed in a row in the X direction (arrangement direction) in the porous nozzles 32, 34, and are discharged from the plurality of discharge pipes and are immersed on the substrate w. The position of the liquid of the treatment liquid is arranged in a row, but the arrangement shape of the treatment liquid is not limited thereto. For example, each of the plurality of ejecting tubes squirts the liquid at the position of the liquid of the substrate w, so that the Y directions (offset directions) are different from each other 2 are arranged in an arcuate or interactive arrangement. In the form, it is also possible to change the configuration of the porous squirting. In short, the liquid level of each treatment liquid which is ejected from each of the plurality of discharge tubes and which is immersed on the substrate w is ejected with the ρ = arrangement direction without interfering with each other, and the porous nozzle is constructed ς 318459 31 1313624 Further, in the above-described embodiment, a plurality of discharge pipes discharge the treatment liquid, and the following: a: two nozzles 32, the plate W, but is not limited thereto. For example, the supply of the treatment liquid to the base-column direction X is arranged in a row, and the discharge processing liquid may be supplied to the substrate w individually along the array processing liquid. In the above embodiment, the plurality of discharge pipes are porous, but a plurality of discharge nozzles are not provided, and the plurality of discharge holes may be formed in the extension direction X. . (4); = mouth 'uses the opening and opening of the opening in the manner of extending in the direction X of the arrangement, although the case of the dilute hydrogen fluoride supply liquid supply substrate 施 is applied to the substrate w, but the substrate treatment The content is not (4) here. For example, a cleaning liquid such as pure water is used as the treatment liquid. The apparatus for supplying the cleaning liquid to the rotating substrate W in the form of a superficial vibration while the ultrasonic vibration is applied to the cleaning liquid, and cleaning the substrate is also performed. The present invention is applicable to moonlight. (Industrial Applicability) The present invention is applicable to various substrates including a semiconductor wafer, a glass substrate for a liquid crystal display device, a PDP (plasma display panel) substrate, a disk glass substrate, and a ceramic substrate. A substrate processing apparatus and a substrate processing method for performing predetermined processing on a substrate while supplying a processing liquid to the substrate. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing a 32 318459 1313624 diagram of a first embodiment of a substrate processing apparatus according to the present invention. Fig. 2 is a perspective view showing the configuration of the liquid ejecting nozzle portion and the position of the liquid on the substrate surface of the processing liquid ejected from the liquid ejecting nozzle portion. Fig. 3 is a plan view showing the configuration of the liquid ejecting nozzle portion and the liquid priming position on the substrate surface of the processing liquid ejected from the liquid ejecting nozzle portion. Fig. 4 is a view for explaining the direction in which the treatment liquid ejected from the porous nozzle is ejected. The «5 figure shows a pattern of the direction in which the liquid is ejected from the porous nozzle and acts on the liquid above the substrate. Fig. 6 is a view showing a second embodiment of the substrate processing apparatus of the present invention. Fig. 7 is an enlarged view of a main part of the substrate processing apparatus of Fig. 6. Fig. 8 is a view showing a third embodiment of the substrate processing apparatus of the present invention. [Main component symbol description]

基板保持部（基板保持手段） 旋轉驅動部（旋轉驅動手段） 液喷出嘴嘴部 嘴嘴驅動部 杯部 外殼 支持臂 基板支持部 周緣支持銷 33 318459 1313624 13 中央支持銷 16 液喷嘴 -17 排出口 21 筒軸 22 傳動帶機構 23 馬達 .30 噴嘴本體 31 液供應管 ,32 多孔喷嘴（第1喷出手段） 33 ' 35 中心處理喷嘴（第2喷出手段) 34 多孔喷嘴（喷出手段） 41 水平移動驅動源 42 升降驅動源 61 基部構件 63 軸承 _ 80 、 84 、 86 ' 87 配管 80a、80b 、87a、87b 分歧配管 81 藥液供應源 82 純水供應源 83a、83b 、84a、88a、88b 開閉閥 ' 86a 流量調節閥 • 121 支持台 122 導引隆起面 161 液供應管 34 318459 1313624 162 喷嘴孔 '163 氣體供應路 321 喷出管 321a、341a 複數之喷出孔 331 喷出管 A (基板之）旋轉方向 AO (基板之）旋轉中心 CL 延伸於偏移方向之線 • LI、L2 列狀處理液之排列方向的長度 RL 旋轉半徑線 SI 偏移距離 W 基板 W1 至 W4 (通過基板之旋轉中心以延伸於偏移方向之線與旋 轉半徑線將基板上面分割而加以規定）四個象限 Wn 短邊長度 • X 排列方向 +x 旋轉半徑線之中相對基板之旋轉中心之一方側 -X 旋轉半徑線之中相對基板之旋轉中心之另一方側 Y 偏移方向 +Y 正偏移方向 -Y 負偏移方向 35 318459Substrate holding unit (substrate holding means) Rotary driving part (rotary driving means) Liquid ejecting nozzle part nozzle driving part cup part housing support arm substrate support part peripheral support pin 33 318459 1313624 13 central support pin 16 liquid nozzle-17 row Outlet 21 Cartridge 22 Belt mechanism 23 Motor. 30 Nozzle body 31 Liquid supply pipe, 32 Porous nozzle (first discharge means) 33 ' 35 Center processing nozzle (second discharge means) 34 Porous nozzle (discharge means) 41 Horizontally moving drive source 42 Lifting drive source 61 Base member 63 Bearings _ 80, 84, 86 ' 87 Pipings 80a, 80b, 87a, 87b Dividing piping 81 Chemical liquid supply source 82 Pure water supply sources 83a, 83b, 84a, 88a, 88b On-off valve '86a Flow regulating valve ・ 121 Supporting table 122 Guided raised surface 161 Liquid supply pipe 34 318459 1313624 162 Nozzle hole '163 Gas supply path 321 Ejection pipe 321a, 341a Multiple discharge holes 331 Ejection pipe A (Substrate The rotation direction AO (the substrate) rotation center CL extends in the direction of the offset direction. • The length of the arrangement direction of the LI and L2 column-shaped treatment liquids RL rotation radius line SI offset distance W substrate W1 to W4 (specified by dividing the center of rotation of the substrate by a line extending in the offset direction and the radius of rotation line to divide the upper surface of the substrate) four quadrants Wn short side length • X arrangement direction +x One of the center of rotation of the opposite substrate among the rotation radius lines - the other side of the rotation center of the opposite substrate among the X rotation radius lines Y Offset direction +Y Positive offset direction -Y Negative offset direction 35 318459

Claims (1)

1313624 十、申請專利範圍： 一種基板處理裝置，係—面使基板以大致水平姿勢旋 轉-面將處理液供應至該基板而對前述基板施行預定 處理者，其特徵為具備： 基板保持手段’將基板以大致水平姿勢保持； 义、、旋轉驅動手旋轉驅動前述基板保持手段以使 前述基板繞著預定之旋轉中心旋轉； 第1喷出手段，朝向藉由前述旋轉驅動手段旋轉 之前述基板上面，沿與前述基板之旋轉㈣方向大致 平行的預定排列方向以列狀噴出處理液；以及 第2嘴出手段，朝前述基板上面之旋轉中心喷出 於將通過前述基板之旋轉中心並延伸於前述基板 =半控方向之線設為旋轉半捏線時，構成自前述 :1喷出手段喷出且著液於前述基板上面之前述列狀 液之處理液的各個著液位置，係自前述旋轉半徑 ^朝正交於該_半#狀偏㈣向僅㈣預定距 2. 利範圍第1項之基板處理裝置，其中，前述 孔之多孔^係具備沿前述排列方向設有複數個噴出 由自前述複數個嘴出孔之各個 刖述列狀處理液供給至前述基 前述多孔噴嘴係藉 噴出孔噴出處理液，將 板上面。 318459 36 1313624 - 申巧專利範圍第1項或第2項之基板處理裝置，其 中丄前述第1喷出手段係以使前述著液位置限定在通 過二述&amp;才反之旋轉中心延伸於前述偏移方向之線與前 述旋轉半徑線分割前述基板上面所界定之四個象限之 任—者之方式喷出處理液。 .如申睛專利範圍第3項之基板處理裝置，其中，前述 第1噴出手段係沿前述基板之旋轉方向對前述基板上 面自斜上方以列狀喷出處理液。 5. 如申請專利範圍第3項之基板處理裝置，其中，係對 乍為月ϋ述基板之長方形之四角形基板施行前述預定處 理， 自前述第1喷出手段喷出且著液於前述四角形基 ί上面之前述聽處理液在前述排列方㈣長度係為 刖述四角形基板之短邊的一半長度以下。 6. 一種基板處理裝置’係—面使基板以大致水平姿勢旋 轉Φ將處理液供應至前述基板而對前述基板施行預 定處理者，其特徵為具備： 土板保持手#又，將基板以大致水平姿勢保持； 二旋轉驅動手段，旋轉驅動前述基板保持手段以使 前述基板繞著預定之旋轉中心旋轉；以及 喷出手段，朝藉由前述旋轉驅動手段旋轉之前述 基板上面’沿與前述基板之旋轉半徑方向大致平行的 預定排列方向呈列狀，並且沿前述基板之旋轉方向對 前述基板上面自斜上方喷出處理液， 318459 37 1313624 =成自刖述喷出手段所噴出且著液於前述基板上 面之:述歹j狀處理液之處理液的各個著液位置係於將 々μ述基板之旋轉中心並延伸於前述基板之旋轉半 位方向之線δ又為旋轉半獲線時，於前述基板上面滿足 以下之第1及第2條件： ρ第1條件.攸則述旋轉半徑線中相對於前述基板 H L伸於—方侧之線上，朝正交於前述旋轉 t線之偏移方向且與前述基板旋轉方向之相反方向 僅錯開預定距離， 乂第2條件·對於通過前述基板之旋轉中心而延伸 :述偏移方向之線而言，前述著液位置之前述基板 私义轉中心側之端部’係位於前述旋轉半徑線中相對 於别述基板之旋轉t心之另一方側。 =申請專利範圍第6項之基板處理裝置，其中，前述 ^手段係具備沿前述排列方向設有複數個喷出 多孔喷嘴， 月,J述多孔喷嘴係藉由自前述複數個噴出孔之各個 、出孔喷出處理液，將前述列狀處理液供給至前述基 上面〇 :申明專利乾圍第6項或第7項之基板處理裝置，其 對作為前述基板之長方形之四角形基板施行前述 頂疋處理， 2刖述噴出手段喷出且著液於前述四角形基板上 之則述列狀處理液之前述排列方向的長度L係滿足1313624 X. Patent application scope: A substrate processing apparatus which is configured such that a substrate is rotated in a substantially horizontal posture and a processing liquid is supplied to the substrate to perform predetermined processing on the substrate, and the substrate is provided with: The substrate is held in a substantially horizontal posture; and the substrate driving means is rotated to drive the substrate to rotate around the predetermined rotation center; and the first ejection means faces the substrate on the substrate rotated by the rotation driving means. Disposing the processing liquid in a row in a predetermined array direction substantially parallel to the rotation (four) direction of the substrate; and the second nozzle discharging means is sprayed toward the center of rotation of the substrate to pass through the center of rotation of the substrate and extending over the substrate When the line of the semi-control direction is a rotary half-kneading line, each of the liquid-drawing positions of the treatment liquid of the columnar liquid which is ejected by the discharge means and is placed on the substrate is formed from the radius of rotation ^Substrate processing device which is orthogonal to the _half-shaped partial (four) direction only (four) predetermined distance 2. The porous hole of the hole is provided with a plurality of discharges in the array direction, and each of the plurality of nozzle-shaped processing liquids from the plurality of nozzle holes is supplied to the base porous nozzle to discharge the processing liquid through the discharge hole, and the plate is discharged. Above. The substrate processing apparatus of the first or the second aspect of the invention, wherein the first ejection means is configured to limit the liquid-drawing position to the rotation center by the second and the opposite rotation center. The processing liquid is ejected in such a manner that the moving direction line and the aforementioned rotation radius line divide the four quadrants defined on the substrate. In the substrate processing apparatus according to the third aspect of the invention, the first discharge means discharges the processing liquid in a row from the upper side of the substrate in the rotation direction of the substrate. 5. The substrate processing apparatus according to claim 3, wherein the rectangular predetermined rectangular substrate is subjected to the predetermined processing, and is ejected from the first ejection means and is immersed in the square base. The length of the above-mentioned hearing treatment liquid in the above arrangement (4) is less than half the length of the short side of the rectangular substrate. A substrate processing apparatus that rotates a substrate in a substantially horizontal posture and supplies a processing liquid to the substrate to perform predetermined processing on the substrate, and is characterized in that: the substrate holding hand # is further provided, and the substrate is substantially a horizontal posture maintaining; a rotary driving means for rotationally driving the substrate holding means to rotate the substrate about a predetermined center of rotation; and a discharging means for the upper surface of the substrate rotated by the rotary driving means a predetermined arrangement direction in which the directions of the rotation radii are substantially parallel are arranged in a row, and the treatment liquid is ejected from the obliquely upward direction on the upper surface of the substrate along the rotation direction of the substrate, 318459 37 1313624 = is ejected from the ejection means and is immersed in the foregoing On the upper surface of the substrate, each liquid-drawing position of the processing liquid of the processing liquid is a line δ which is a rotation center of the substrate and extends in the rotation half direction of the substrate, and is a rotation half-receiving line. The substrate upper surface satisfies the following first and second conditions: ρ first condition. 攸 The rotation radius line is relative to the base The plate HL extends on the line on the side of the square, and is shifted by a predetermined distance in a direction orthogonal to the direction of rotation of the aforementioned t-line and opposite to the direction of rotation of the substrate, and the second condition is extended by the center of rotation of the substrate. In the line of the offset direction, the end portion of the substrate at the center of the substrate on the center of the transfer center is located on the other side of the rotation radius line with respect to the rotation t center of the other substrate. The substrate processing apparatus of claim 6, wherein the means comprises: providing a plurality of ejection orifice nozzles in the array direction, and wherein the porous nozzles are each from the plurality of ejection orifices The discharge processing liquid is discharged from the hole, and the column-shaped processing liquid is supplied to the substrate. The substrate processing apparatus according to claim 6 or 7 of the present invention, wherein the top plate is applied to the rectangular quadrangular substrate as the substrate. 2, the length L of the arrangement direction of the columnar processing liquid which is ejected by the ejection means and is immersed on the quadrangular substrate is satisfied 318459 38 1313624 以下之條件， Re . sin (9 +(Wn/2) 其t， Re···從前述四角形基板之旋轉中心到前述 =液之前述四角形基板的旋轉中心側之端部 為止之距離， Θ···連接前述四角形基板之旋轉中心與前述列狀 ^理，之前述四角形基板的旋轉中心側之端部著液位 之線段’舆通猶述四㈣基板之㈣巾心而 於别述偏移方向之線所形成之角， 9. Wn···前述四角形基板之短邊長度。 —種基板處理方法，係—面使基㈣缝水平姿勢旋 ，一面將處理液供應至前述基板而對前述基板施行預 定處理者’其特徵為具備： 使基板以大致水平姿勢繞著預定之旋轉中心 之基板旋轉步驟；以及 在前述基板旋轉步驟中一面自第丨噴出手段朝向 前述基板上面沿與前述基板之旋轉半徑方向大致平^ 的預定排列方向以列狀喷出處理液，一面自第2喷出 手段朝向㈣基板上面之_中以出處理液之步驟， 於將通過前述基板之旋轉中心且延伸於前述基板 之旋轉半徑方向之線設為旋轉半徑線時，構成自前述 第1喷出手段噴出且著液於前述基板上面之前述列狀 處理液之處理液的各個著液位置’係在正交於該旋轉 318459 39 1313624 . 半徑線之偏移方向自前述旋轉半徑線上僅錯開預定距 離。 10· —種基板處理方法，係一面使基板以大致水平姿勢旋 轉一面將處理液供應至該基板而對基板施行預定處理 者’其特徵為具備： 使基板以大致水平姿勢繞著預定之旋轉t心旋轉 之基板旋轉步驟；以及 . 在前述基板旋轉步驟中自噴出手段朝向前述基板 上面沿與前述基板之旋轉半徑方向大致平行的預定排 列方向呈列狀，並且沿前述基板之旋轉方向對前述基 板上面自斜上方喷出處理液之步驟， 於將通過前述基板之旋轉中心且延伸於前述基板 之旋轉半徑方向之線設為旋轉半徑線時，構成自前述 噴出手奴喷出且著液於前述基板上面之前述列狀處理 液之處理液的各個著液位置係於前述基板上面滿足以 | 下之條件： &gt;第1條件：從前述旋轉半徑線中相對於前述基板 之，轉中心延伸於一方侧之線i，朝i交於前述旋轉 半徑線之偏移方向且與前述基板旋轉方向相反之方向 僅錯開預定距離， 第2條件.對於通過前述基板之旋轉中心而延伸 ;月^述偏移方向之線而言，前述著液位置之前述基板 的^轉中心側之端冑，係位於前述旋轉半徑線中相對 於刚述基板之旋轉中心之另一方側。 318459 40318459 38 1313624 The following conditions, Re. sin (9 + (Wn/2), t, Re··· the distance from the center of rotation of the above-mentioned square substrate to the end of the rotation center side of the above-mentioned square substrate Θ······································································· The angle formed by the line of the offset direction, 9. Wn··· The short side length of the above-mentioned quadrangular substrate. The substrate processing method, the surface-to-surface (four) slit is horizontally rotated, and the processing liquid is supplied to the substrate. And the step of performing the predetermined processing on the substrate is characterized by: a step of rotating the substrate around the predetermined rotation center in a substantially horizontal posture; and a step of ejecting from the second ejection direction toward the substrate in the substrate rotation step The predetermined arrangement direction of the substrate in the direction of the radius of rotation of the substrate is discharged in a row, and the processing liquid is discharged from the second discharge means toward the top surface of the (four) substrate. The liquid step is configured to form a column shape that is ejected from the first ejection means and is deposited on the substrate surface when a line passing through a rotation center of the substrate and extending in a direction of a radius of rotation of the substrate is a rotation radius line The respective liquid-holding positions of the treatment liquid of the treatment liquid are orthogonal to the rotation 318459 39 1313624. The deviation direction of the radius line is only shifted by a predetermined distance from the rotation radius line. 10· A substrate treatment method is to make the substrate on one side Providing a predetermined processing to the substrate while rotating the processing liquid to the substrate in a substantially horizontal posture. The method includes: a substrate rotating step of rotating the substrate in a substantially horizontal posture about a predetermined rotation t center; and a step of ejecting the treatment liquid from the upper surface of the substrate in a predetermined alignment direction substantially parallel to the direction of the rotation radius of the substrate, and ejecting the treatment liquid from the obliquely upward direction on the substrate surface in the rotation direction of the substrate in the rotation step Passing through the center of rotation of the substrate and extending over the radius of rotation of the substrate When the line is set to the radius of rotation line, each liquid level of the processing liquid constituting the columnar processing liquid which is ejected from the ejection hand and is placed on the substrate is satisfied that the substrate is on the substrate : &gt; first condition: a line i extending from one of the rotation centers to the one side of the rotation radius line, and the direction i is opposite to the rotation direction of the rotation radius line and opposite to the rotation direction of the substrate Only the predetermined distance is shifted, the second condition is extended by the center of rotation of the substrate; and the line of the offset direction of the substrate is at the end of the substrate The other side of the radius line with respect to the center of rotation of the substrate. 318459 40
TW095133071A 2005-12-27 2006-09-07 Substrate processing apparatus and substrate processing method TWI313624B (en)

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