TWI693109B - Coating method - Google Patents

Coating method Download PDF

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TWI693109B
TWI693109B TW107145441A TW107145441A TWI693109B TW I693109 B TWI693109 B TW I693109B TW 107145441 A TW107145441 A TW 107145441A TW 107145441 A TW107145441 A TW 107145441A TW I693109 B TWI693109 B TW I693109B
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chemical solution
substrate
solvent
chemical
nozzle
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TW107145441A
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TW201932202A (en
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吉田省吾
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日商斯庫林集團股份有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00Processes for applying liquids or other fluent materials
    • B05D1/36Successively applying liquids or other fluent materials, e.g. without intermediate treatment
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00Processes for applying liquids or other fluent materials
    • B05D1/40Distributing applied liquids or other fluent materials by members moving relatively to surface
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D7/00Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials

Abstract

第1藥液C1於基板W之溶劑膜SL上無間隙地以螺旋狀放置。圓形基板W之旋轉分別擴展第1藥液C1及第2藥液C2。第1藥液C1因牽引較第1藥液C1黏度高之第2藥液C2,故輔助擴展第2藥液C2。又,第2藥液C2放置於較第2藥液C2黏度低之第1藥液C1上,溶劑SL進入形成於圓形基板W之正面上之凹部H。因此,藉由圓形基板W之旋轉,能夠使第1藥液C1較第2藥液C2更容易進入凹部H。The first chemical solution C1 is placed in a spiral shape on the solvent film SL of the substrate W without a gap. The rotation of the circular substrate W expands the first chemical solution C1 and the second chemical solution C2, respectively. Since the first medical solution C1 draws the second medical solution C2 having a higher viscosity than the first medical solution C1, it assists in expanding the second medical solution C2. Moreover, the second chemical solution C2 is placed on the first chemical solution C1 having a lower viscosity than the second chemical solution C2, and the solvent SL enters the recess H formed on the front surface of the circular substrate W. Therefore, by rotating the circular substrate W, the first chemical solution C1 can enter the recess H more easily than the second chemical solution C2.

Description

塗佈方法Coating method

本發明係關於一種塗佈方法,該塗佈方法係於半導體基板、液晶顯示器及有機EL(Electroluminescence,電致發光)顯示器裝置等FPD(Flat Panel Display,平板顯示器)用基板、光罩用玻璃基板、光碟用基板、磁碟用基板、陶瓷基板、太陽電池用基板等基板上,利用高黏度之藥液塗佈厚膜。The present invention relates to a coating method, which is applied to substrates for FPD (Flat Panel Display) and glass substrates for photomasks such as semiconductor substrates, liquid crystal displays and organic EL (Electroluminescence) display devices , Substrates for optical discs, substrates for magnetic discs, ceramic substrates, substrates for solar cells and other substrates, thick films are coated with chemical solutions of high viscosity.

塗佈裝置具備:保持旋轉部,其保持圓形基板且使圓形基板旋轉,及噴嘴,其配置於由保持旋轉部所保持之圓形基板之上方且將藥液供給至圓形基板上(例如參照專利文獻1、2)。塗佈裝置一面使圓形基板以低速旋轉,一面自噴嘴將藥液供給至圓形基板上。其後,塗佈裝置使圓形基板以高速旋轉。藉此,於圓形基板上以特定之厚度形成藥液膜(薄膜)。The coating device includes: a holding rotating portion that holds a circular substrate and rotates the circular substrate; and a nozzle that is disposed above the circular substrate held by the holding rotating portion and supplies the chemical solution onto the circular substrate ( For example, refer to Patent Documents 1 and 2). The coating device rotates the circular substrate at a low speed while supplying the chemical solution onto the circular substrate from the nozzle. Thereafter, the coating device rotates the circular substrate at high speed. By this, a chemical liquid film (thin film) is formed on the circular substrate with a specific thickness.

又,於專利文獻3中揭示有如下之液處理方法。以第1轉數使基板旋轉。然後,於基板正面上之位置開始處理液之供給,該位置係距基板之旋轉中心之距離為相對於基板之半徑超過0%且40%以下者。然後,使處理液之供給位置移動。處理液之供給位置到達旋轉中心後,一面供給處理液,一面以大於第1轉數之第2轉數使基板旋轉。藉此,將處理液擴展塗佈至基板之外周側。即,藉由使供給開始位置偏心,消除因氣泡混入引起之處理液之塗佈狀態不均勻之虞。再者,處理液之黏度為20~220 cP(centipoise,厘泊)。 [先前技術文獻] [專利文獻]In addition, Patent Document 3 discloses the following liquid treatment method. The substrate is rotated at the first revolution. Then, the supply of the processing liquid is started at a position on the front surface of the substrate, which is a distance from the center of rotation of the substrate that exceeds 0% to 40% of the radius of the substrate. Then, the supply position of the processing liquid is moved. After the supply position of the processing liquid reaches the center of rotation, while supplying the processing liquid, the substrate is rotated at a second number of revolutions greater than the first number of revolutions. By this, the processing liquid is spread and applied to the outer peripheral side of the substrate. That is, by eccentricity of the supply start position, the possibility of uneven coating state of the processing liquid due to the mixing of bubbles is eliminated. Furthermore, the viscosity of the treatment liquid is 20 ~ 220 cP (centipoise, centipoise). [Prior Technical Literature] [Patent Literature]

[專利文獻1] 日本專利特開昭60-217627號公報 [專利文獻2] 日本專利3970695號公報 [專利文獻3] 日本專利5931230號公報[Patent Literature 1] Japanese Patent Laid-Open No. 60-217627 [Patent Literature 2] Japanese Patent No. 3970695 [Patent Literature 3] Japanese Patent No. 5931230

[發明所欲解決之問題][Problems to be solved by the invention]

希望於在正面(上表面)形成有凹凸之階差之圓形基板上較厚地形成藥液膜之同時,使藥液充滿形成於圓形基板之正面上之凹部。然而,於使用1000 cP(centipoise)以上之高黏度藥液之情形時,即便能夠於圓形基板上之整體(整個面)擴展塗佈液,亦存在高黏度藥液難以進入凹部之問題。It is desirable to form a thick chemical liquid film on a circular substrate with unevenness formed on the front surface (upper surface), and to fill the concave portion formed on the front surface of the circular substrate with the chemical liquid. However, in the case of using a high-viscosity chemical solution of more than 1000 cP (centipoise), even if the coating solution can be spread over the whole (the entire surface) of the circular substrate, there is a problem that the high-viscosity chemical solution is difficult to enter the recess.

例如有於圓形基板上充滿溶劑,置換藥液之方法。於該方法中,若使用大量溶劑及大量高黏度藥液,則或許能夠一面較厚地形成高黏度藥液膜,一面使高黏度藥液進入凹部。然而,該方法因浪費大量溶劑及大量高黏度藥液故欠佳。因此,需要能夠藉由相對少量之溶劑及高黏度,較厚地形成圓形基板上之藥液膜之同時,使藥液膜充滿形成於圓形基板之凹部之方法。For example, there is a method in which a circular substrate is filled with a solvent and the chemical liquid is replaced. In this method, if a large amount of solvent and a large amount of high-viscosity chemical solution are used, it may be possible to form a high-viscosity chemical solution film thickly while allowing the high-viscosity chemical solution to enter the concave portion. However, this method is not good because it wastes a large amount of solvent and a large amount of high-viscosity chemical solution. Therefore, there is a need for a method capable of thickly forming a chemical liquid film on a round substrate with a relatively small amount of solvent and high viscosity, and simultaneously filling the concave portion formed on the circular substrate with the chemical liquid film.

本發明係鑒於此種情況而完成者,其目的在於提供一種塗佈方法,該方法能夠藉由相對少量之溶劑及高黏度藥液,於圓形基板上較厚地形成藥液膜之同時,使藥液膜充滿形成於圓形基板之正面上之凹部。 [解決問題之技術手段]The present invention has been completed in view of this situation, and its object is to provide a coating method that can form a thick chemical film on a round substrate with a relatively small amount of solvent and a high-viscosity chemical solution. The chemical liquid film fills the recesses formed on the front surface of the circular substrate. [Technical means to solve the problem]

本發明為了達成此種目的,採用如下之構成。即,本發明之塗佈方法之特徵在於包括以下步驟:一面使於正面具有複數個凹部之圓形基板旋轉,一面自溶劑噴嘴噴出溶劑至上述圓形基板上,藉此於溶劑進入上述凹部之同時,於上述圓形基板上形成溶劑膜;形成上述溶劑膜後,一面使第1藥液噴嘴於上述圓形基板之半徑方向移動,一面自上述第1藥液噴嘴於與上述第1藥液噴嘴相對旋轉之上述圓形基板之上述溶劑膜上噴出第1藥液,藉此將第1藥液無間隙地以螺旋狀放置於上述圓形基板之上述溶劑膜上;將上述第1藥液無間隙地以螺旋狀放置後,自第2藥液噴嘴朝向上述圓形基板之中心於上述第1藥液上噴出較上述第1藥液黏度高之第2藥液;及藉由使上述圓形基板旋轉,朝向上述圓形基板之周緣部側分別擴展上述第1藥液及上述第2藥液。In order to achieve such an object, the present invention adopts the following configuration. That is, the coating method of the present invention is characterized by including the steps of: while rotating a circular substrate having a plurality of concave portions on the front side, while spraying the solvent from the solvent nozzle onto the circular substrate, whereby the solvent enters the concave portion At the same time, a solvent film is formed on the circular substrate; after the solvent film is formed, the first chemical liquid nozzle is moved from the first chemical liquid nozzle to the first chemical liquid while the first chemical liquid nozzle is moved in the radial direction of the circular substrate The first chemical solution is ejected from the solvent film of the circular substrate rotating relative to the nozzle, whereby the first chemical solution is placed spirally on the solvent film of the circular substrate without a gap; the first chemical solution After being placed in a spiral shape without a gap, a second chemical solution having a higher viscosity than the first chemical solution is ejected from the second chemical solution nozzle toward the center of the circular substrate on the first chemical solution; and by making the circle The shaped substrate rotates to expand the first chemical solution and the second chemical solution toward the peripheral edge side of the circular substrate, respectively.

藉由本發明之塗佈方法,將第1藥液無間隙地以螺旋狀放置於圓形基板之溶劑膜上。圓形基板之旋轉分別擴展第1藥液及第2藥液。第1藥液因牽引較第1藥液黏度高之第2藥液,故輔助擴展第2藥液。又,第2藥液放置於較第2藥液黏度低之第1藥液上。又,溶劑進入形成圓形基板之正面上之凹部。因此,藉由圓形基板之旋轉,能夠使第1藥液較第2藥液更容易地進入凹部。其結果,能夠藉由相對少量之溶劑及高黏度藥液,於圓形基板上較厚地形成藥液膜之同時,使藥液膜充滿形成於圓形基板之正面上之凹部。With the coating method of the present invention, the first chemical solution is placed on the solvent film of the circular substrate in a spiral shape without gaps. The rotation of the circular substrate expands the first chemical solution and the second chemical solution, respectively. Because the first medical fluid draws the second medical fluid with a higher viscosity than the first medical fluid, it assists in expanding the second medical fluid. In addition, the second chemical solution is placed on the first chemical solution having a lower viscosity than the second chemical solution. In addition, the solvent enters the concave portion on the front surface forming the circular substrate. Therefore, by rotating the circular substrate, the first chemical solution can enter the concave portion more easily than the second chemical solution. As a result, a relatively small amount of solvent and a high-viscosity chemical liquid can form the chemical liquid film on the circular substrate thickly, and at the same time fill the concave part formed on the front surface of the circular substrate with the chemical liquid film.

又,於上述之塗佈方法中,分別擴展上述第1藥液及上述第2藥液之步驟之一例係於自上述第2藥液噴嘴噴出之上述第2藥液到達上述第1藥液上後,一面噴出上述第2藥液,一面使上述圓形基板旋轉。第1藥液因牽引較第1藥液黏度高之第2藥液,故輔助擴展第2藥液。此時,因自第2藥液噴嘴噴出之第2藥液依序擴展,故能夠順利地擴展第2藥液。Furthermore, in the above coating method, an example of the steps of expanding the first chemical solution and the second chemical solution respectively is that the second chemical solution ejected from the second chemical solution nozzle reaches the first chemical solution After that, the second chemical solution is ejected while rotating the circular substrate. Because the first medical fluid draws the second medical fluid with a higher viscosity than the first medical fluid, it assists in expanding the second medical fluid. At this time, since the second chemical liquid ejected from the second chemical liquid nozzle is sequentially expanded, the second chemical liquid can be smoothly expanded.

又,於上述塗佈方法中,分別擴展上述第1藥液及上述第2藥液之步驟之一例係於僅噴出預先設定之上述第2藥液之量且停止上述第2藥液之噴出後,使上述圓形基板旋轉。藉此,能夠於預先設定之量之第2藥液噴出至第1藥液上之狀態下,藉由圓形基板之旋轉分別擴展上述第1藥液及上述第2藥液。In addition, in the above coating method, an example of the step of expanding the first chemical solution and the second chemical solution separately is to discharge only the preset amount of the second chemical solution and stop the ejection of the second chemical solution To rotate the circular substrate. With this, the first chemical solution and the second chemical solution can be expanded by the rotation of the circular substrate in a state where a predetermined amount of the second chemical solution is ejected onto the first chemical solution.

又,於上述塗佈方法中,較佳為上述第2藥液噴嘴具有圓形或正多邊形之噴出口。因不易使噴出至第1藥液上之第2藥液變形,故能夠容易地將第2藥液均勻地擴展為同心圓狀。Furthermore, in the above coating method, it is preferable that the second chemical solution nozzle has a circular or regular polygonal discharge port. Since it is difficult to deform the second chemical solution ejected onto the first chemical solution, the second chemical solution can be easily spread uniformly in a concentric shape.

又,於上述塗佈方法中,較佳為上述第2藥液係與上述第1藥液相同種類之藥液。可使第1藥液與第2藥液於乾燥後成為不易區分之一體之膜。Furthermore, in the above coating method, it is preferable that the second chemical solution is the same kind of chemical solution as the first chemical solution. The first chemical solution and the second chemical solution can be made into a film that is not easily distinguishable after drying.

又,於上述塗佈方法中,較佳為形成上述溶劑膜之步驟係一面使上述溶劑噴嘴於上述圓形基板之半徑方向移動,一面自上述溶劑噴嘴將溶劑噴出至旋轉之上述圓形基板上。藉此,因能夠使溶劑噴嘴之噴出口與凹部之各者對向,故溶劑容易進入凹部。 [發明之效果]Furthermore, in the coating method, it is preferable that the step of forming the solvent film is to spray the solvent from the solvent nozzle onto the rotating circular substrate while moving the solvent nozzle in the radial direction of the circular substrate . Thereby, since the ejection port of the solvent nozzle can face each of the recesses, the solvent easily enters the recesses. [Effect of invention]

根據本發明之塗佈方法,能夠藉由相對少量之溶劑及高黏度藥液,於在圓形基板上較厚地形成藥液膜之同時,使藥液膜充滿形成於圓形基板之正面上之凹部。According to the coating method of the present invention, a relatively small amount of solvent and a high-viscosity chemical solution can be used to form a thick chemical film on a round substrate while filling the chemical film on the front surface of the circular substrate Recess.

[實施例][Example]

以下,參照圖式對本發明之實施例進行說明。圖1係實施例之塗佈裝置之概略構成圖。圖2係表示溶劑噴嘴移動機構及2個藥液噴嘴移動機構之俯視圖。Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a schematic configuration diagram of a coating apparatus of an embodiment. 2 is a plan view showing a solvent nozzle moving mechanism and two chemical liquid nozzle moving mechanisms.

<塗佈裝置1之構成> 參照圖1。塗佈裝置1具備保持旋轉部2、溶劑噴嘴3及2個藥液噴嘴4、5。再者,藥液噴嘴4相當於本發明之第1藥液噴嘴,藥液噴嘴5相當於本發明之第2藥液噴嘴。<Configuration of coating device 1> Refer to Figure 1. The coating device 1 includes a holding rotary unit 2, a solvent nozzle 3, and two chemical liquid nozzles 4, 5. In addition, the chemical liquid nozzle 4 corresponds to the first chemical liquid nozzle of the present invention, and the chemical liquid nozzle 5 corresponds to the second chemical liquid nozzle of the present invention.

保持旋轉部2以大致水平狀態保持圓形基板(以下適當稱為「基板」)W,且使保持之基板W旋轉。保持旋轉部2具備旋轉夾盤7及旋轉驅動部8。旋轉夾盤7設置為可繞旋轉軸AX1旋轉且保持基板W。旋轉夾盤7以例如藉由真空吸附基板W之背面(下表面)保持基板W之方式構成。旋轉驅動部8進行使旋轉夾盤7繞旋轉軸AX1旋轉之驅動。旋轉驅動部8例如包含電動馬達。再者,旋轉軸AX1與基板W之中心CT大致一致。The holding rotation section 2 holds a circular substrate (hereinafter referred to as a "substrate" as appropriate) W in a substantially horizontal state, and rotates the held substrate W. The holding rotary unit 2 includes a rotary chuck 7 and a rotary drive unit 8. The rotary chuck 7 is provided so as to be rotatable about a rotation axis AX1 and hold the substrate W. The rotary chuck 7 is configured to hold the substrate W by vacuum suction of the back surface (lower surface) of the substrate W, for example. The rotation drive unit 8 drives the rotation chuck 7 to rotate about the rotation axis AX1. The rotation drive unit 8 includes, for example, an electric motor. In addition, the rotation axis AX1 substantially coincides with the center CT of the substrate W.

護罩9以包圍基板W及保持旋轉部2之側方之方式設置。護罩9以藉由未圖示之驅動部於上下方向上移動之方式構成。The shield 9 is provided so as to surround the substrate W and hold the side of the rotating portion 2. The shroud 9 is configured to move in the vertical direction by a drive unit (not shown).

溶劑噴嘴3噴出溶劑SL。作為溶劑SL,可使用例如稀釋劑、PGMEA(Propylene Glycol Methyl Ether Acetate,丙二醇單甲醚乙酸酯)、乳酸乙酯、IPA(Isopropyl Alcohol,異丙醇)。藉由將溶劑SL噴出至基板W上而進行預濕處理,例如使自藥液噴嘴4噴出之第1藥液C1容易附著於基板W上,又,使第1藥液C1容易於基板W上擴展。又,藉由溶劑SL,使第1藥液C1容易進入凹部H。The solvent nozzle 3 ejects the solvent SL. As the solvent SL, for example, a diluent, PGMEA (Propylene Glycol Methyl Ether Acetate), ethyl lactate, and IPA (Isopropyl Alcohol) can be used. Pre-wetting is performed by spraying the solvent SL onto the substrate W, for example, the first chemical solution C1 ejected from the chemical solution nozzle 4 is easily attached to the substrate W, and the first chemical solution C1 is easily attached to the substrate W Expand. In addition, the solvent SL allows the first chemical solution C1 to easily enter the recess H.

藥液噴嘴4噴出第1藥液C1。藥液噴嘴4具有長方形即狹縫狀之噴出口4a。藉由使噴出口4a為長方形,與使噴出口4a為圓形或正方形之情形相比,能夠增加每旋轉1次之塗佈面積。藥液噴嘴5噴出第2藥液C2。藥液噴嘴5具有圓形或者正四邊形或正六邊形等正多邊形之噴出口5a。藉此,噴出至第1藥液膜SF上之第2藥液C2不易變形,即因接近圓形,故能夠容易地於基板W上將第2藥液C2均勻地擴展為同心圓狀。The chemical solution nozzle 4 ejects the first chemical solution C1. The chemical liquid nozzle 4 has a rectangular or slit-shaped ejection port 4a. By making the discharge port 4a rectangular, compared to the case where the discharge port 4a is circular or square, the coating area per rotation can be increased. The chemical liquid nozzle 5 ejects the second chemical liquid C2. The chemical liquid nozzle 5 has a regular polygonal ejection port 5a such as a circle, regular quadrangle, regular hexagon, or the like. As a result, the second chemical solution C2 ejected onto the first chemical solution film SF is not easily deformed, that is, because it is close to a circle, the second chemical solution C2 can be easily spread on the substrate W into a concentric shape uniformly.

自藥液噴嘴4噴出之第1藥液C1及自藥液噴嘴5噴出之第2藥液C2使用相對高黏度之藥液。第1藥液C1之黏度為300 cP(centipoise)以上且未達1000 cP。又,第1藥液C1之黏度較佳為300 cP以上且未達700 cP。又,第1藥液C1之黏度更佳為500 cP以上且未達700 cP。第2藥液C2之黏度為1000 cP以上且10000 cP以下。The first chemical liquid C1 ejected from the chemical liquid nozzle 4 and the second chemical liquid C2 ejected from the chemical liquid nozzle 5 use a relatively high-viscosity chemical liquid. The viscosity of the first liquid C1 is 300 cP (centipoise) or more and less than 1000 cP. In addition, the viscosity of the first chemical solution C1 is preferably 300 cP or more and less than 700 cP. In addition, the viscosity of the first chemical solution C1 is more preferably 500 cP or more and less than 700 cP. The viscosity of the second chemical solution C2 is 1000 cP or more and 10000 cP or less.

第1藥液C1及第2藥液C2使用例如抗蝕劑(例如阻焊劑、光阻劑)、聚醯亞胺等。又,第1藥液C1及第2藥液C2使用用於形成保護膜、層間絕緣膜、SOD(Spin On Dielectric,旋塗式介電質)膜等之藥液。第2藥液C2雖係與第1藥液C1相同種類之藥液(例如阻焊劑),但黏度不同。第2藥液C2與第1藥液C1之主成分相同。第2藥液C2例如與第1藥液C1相比,藉由改變溶劑SL之含量而提高黏度。第1藥液C1及第2藥液C2係無法區分乾燥或煅燒之後之物體之藥液。For the first chemical solution C1 and the second chemical solution C2, for example, a resist (for example, solder resist, photoresist), polyimide, or the like is used. In addition, as the first chemical solution C1 and the second chemical solution C2, chemical solutions for forming a protective film, an interlayer insulating film, a SOD (Spin On Dielectric) film, or the like are used. Although the second chemical solution C2 is the same chemical solution (for example, solder resist) as the first chemical solution C1, the viscosity is different. The second chemical solution C2 has the same main component as the first chemical solution C1. For example, the second chemical solution C2 has a higher viscosity by changing the content of the solvent SL than the first chemical solution C1. The first chemical solution C1 and the second chemical solution C2 are chemical solutions that cannot distinguish objects after drying or calcination.

塗佈裝置1具備溶劑供給源13、溶劑配管15、泵P1及開關閥V1。溶劑供給源13例如包含瓶等容器。來自溶劑供給源13之溶劑SL通過溶劑配管15供給至溶劑噴嘴3。於溶劑配管15設置有泵P1及開關閥V1等。泵P1將溶劑SL送至溶劑噴嘴3,開關閥V1進行溶劑SL之供給及其停止。The coating device 1 includes a solvent supply source 13, a solvent piping 15, a pump P1, and an on-off valve V1. The solvent supply source 13 includes, for example, a container such as a bottle. The solvent SL from the solvent supply source 13 is supplied to the solvent nozzle 3 through the solvent piping 15. The solvent piping 15 is provided with a pump P1, an on-off valve V1, and the like. The pump P1 sends the solvent SL to the solvent nozzle 3, and the switching valve V1 supplies and stops the solvent SL.

又,塗佈裝置1具備第1藥液供給源17、藥液配管19、泵P2及開關閥V2。第1藥液供給源17例如包含瓶等容器。來自第1藥液供給源17之第1藥液C1通過藥液配管19供給至藥液噴嘴4。於藥液配管19設置有泵P2及開關閥V2等。泵P2將第1藥液C1藥液送至噴嘴4,開關閥V2進行第1藥液C1之供給及其停止。In addition, the coating device 1 includes a first chemical solution supply source 17, a chemical solution piping 19, a pump P2, and an on-off valve V2. The first chemical solution supply source 17 includes, for example, a container such as a bottle. The first chemical solution C1 from the first chemical solution supply source 17 is supplied to the chemical solution nozzle 4 through the chemical solution piping 19. The chemical liquid piping 19 is provided with a pump P2 and an on-off valve V2. The pump P2 sends the first chemical solution C1 to the nozzle 4, and the on-off valve V2 supplies the first chemical solution C1 and stops it.

又,塗佈裝置1具備第2藥液供給源21、藥液配管23、泵P3及開關閥V3。第2藥液供給源21例如包含瓶等容器。來自第2藥液供給源21之第2藥液C2通過藥液配管23供給至藥液噴嘴5。於藥液配管23設置有泵P3及開關閥V3等。泵P3將第2藥液C2藥液送至噴嘴5,開關閥V3進行第2藥液C2之供給及其停止。In addition, the coating device 1 includes a second chemical solution supply source 21, a chemical solution piping 23, a pump P3, and an on-off valve V3. The second chemical solution supply source 21 includes, for example, a container such as a bottle. The second chemical liquid C2 from the second chemical liquid supply source 21 is supplied to the chemical liquid nozzle 5 through the chemical liquid pipe 23. The chemical liquid piping 23 is provided with a pump P3, an on-off valve V3, and the like. The pump P3 sends the second chemical solution C2 to the nozzle 5, and the on-off valve V3 supplies the second chemical solution C2 and stops it.

塗佈裝置1具備溶劑噴嘴移動機構25、第1藥液噴嘴移動機構27及第2藥液噴嘴移動機構29。參照圖2。The coating device 1 includes a solvent nozzle moving mechanism 25, a first chemical liquid nozzle moving mechanism 27, and a second chemical liquid nozzle moving mechanism 29. Refer to Figure 2.

溶劑噴嘴移動機構25使溶劑噴嘴3繞旋轉軸AX2旋轉(移動)。溶劑噴嘴移動機構25具備臂31、軸33及旋轉驅動部35。臂31支持溶劑噴嘴3,軸33支持臂31。即,於棒狀之臂31之一端連接有溶劑噴嘴3,於臂31之另一端連接有軸33。旋轉驅動部35藉由使軸33繞旋轉軸AX2旋轉,使溶劑噴嘴3及臂31繞旋轉軸AX2旋轉。旋轉驅動部35具備電動馬達。再者,由溶劑噴嘴移動機構25進行之溶劑噴嘴3之移動包含於半徑方向之移動中。The solvent nozzle moving mechanism 25 rotates (moves) the solvent nozzle 3 around the rotation axis AX2. The solvent nozzle moving mechanism 25 includes an arm 31, a shaft 33, and a rotation driving section 35. The arm 31 supports the solvent nozzle 3 and the shaft 33 supports the arm 31. That is, the solvent nozzle 3 is connected to one end of the rod-shaped arm 31, and the shaft 33 is connected to the other end of the arm 31. The rotation drive unit 35 rotates the shaft 33 about the rotation axis AX2 to rotate the solvent nozzle 3 and the arm 31 about the rotation axis AX2. The rotation drive unit 35 includes an electric motor. Furthermore, the movement of the solvent nozzle 3 by the solvent nozzle moving mechanism 25 is included in the movement in the radial direction.

第1藥液噴嘴移動機構27使藥液噴嘴4於上下方向(Z方向)及沿著基板W之正面之特定之第1方向(例如X方向)上移動。第1藥液噴嘴移動機構27具備臂37、上下移動部39及平面移動部41。臂37支持藥液噴嘴4。上下移動部39使藥液噴嘴4及臂37於上下方向上移動。平面移動部41使藥液噴嘴4、臂37及上下移動部39於第1方向上移動。再者,藥液噴嘴4以其噴出口4a之長度方向與第1方向(X方向)平行之方式配置。The first chemical liquid nozzle moving mechanism 27 moves the chemical liquid nozzle 4 in the vertical direction (Z direction) and in a specific first direction (for example, X direction) along the front surface of the substrate W. The first chemical liquid nozzle moving mechanism 27 includes an arm 37, a vertical moving part 39, and a plane moving part 41. The arm 37 supports the chemical liquid nozzle 4. The vertical movement part 39 moves the chemical liquid nozzle 4 and the arm 37 in the vertical direction. The plane moving part 41 moves the chemical liquid nozzle 4, the arm 37, and the vertical moving part 39 in the first direction. In addition, the chemical liquid nozzle 4 is arranged so that the longitudinal direction of the ejection port 4a is parallel to the first direction (X direction).

第2藥液噴嘴移動機構29使藥液噴嘴5於上下方向(Z方向)及沿著基板W之正面之特定之第1方向(例如X方向)上移動。第2藥液噴嘴移動機構29具備臂43、上下移動部45及平面移動部47。臂43支持藥液噴嘴5。上下移動部45使藥液噴嘴5及臂43於上下方向上移動。平面移動部47使藥液噴嘴5、臂43及上下移動部45於第1方向上移動。The second chemical liquid nozzle moving mechanism 29 moves the chemical liquid nozzle 5 in the vertical direction (Z direction) and in a specific first direction (for example, X direction) along the front surface of the substrate W. The second chemical liquid nozzle moving mechanism 29 includes an arm 43, a vertical moving part 45, and a plane moving part 47. The arm 43 supports the chemical liquid nozzle 5. The vertical movement part 45 moves the chemical liquid nozzle 5 and the arm 43 in the vertical direction. The plane moving part 47 moves the chemical liquid nozzle 5, the arm 43, and the vertical moving part 45 in the first direction.

上下移動部39、45及平面移動部41、47分別具備例如電動馬達、螺旋軸及導軌。再者,平面移動部41、47亦可以使藥液噴嘴4、5等不僅於第1方向上移動,亦於與第1方向正交之第2方向(Y方向)上移動之方式構成。溶劑噴嘴3及2個藥液噴嘴4、5以其中心通過基板W之中心CT之上方之方式構成。The up and down moving parts 39 and 45 and the plane moving parts 41 and 47 are provided with, for example, electric motors, screw shafts, and guide rails. In addition, the plane moving parts 41 and 47 may be configured to move the chemical liquid nozzles 4, 5 and the like not only in the first direction but also in the second direction (Y direction) orthogonal to the first direction. The solvent nozzle 3 and the two chemical liquid nozzles 4 and 5 are configured such that their centers pass above the center CT of the substrate W.

再者,溶劑噴嘴移動機構25可如第1藥液噴嘴移動機構27般使溶劑噴嘴3於上下方向(Z方向)上移動,亦可使溶劑噴嘴3於第1方向及第2方向中之至少一者移動。另一方面,2個藥液噴嘴移動機構27、29亦可如溶劑噴嘴移動機構25般使藥液噴嘴4或藥液噴嘴5繞配置於護罩9之側方之旋轉軸旋轉。又,溶劑噴嘴移動機構25及2個藥液噴嘴移動機構27、29亦可包含多關節臂。Further, the solvent nozzle moving mechanism 25 may move the solvent nozzle 3 in the vertical direction (Z direction) like the first chemical liquid nozzle moving mechanism 27, or may move the solvent nozzle 3 in at least one of the first direction and the second direction One moves. On the other hand, the two chemical liquid nozzle moving mechanisms 27 and 29 may rotate the chemical liquid nozzle 4 or the chemical liquid nozzle 5 about the rotation axis arranged on the side of the shield 9 like the solvent nozzle moving mechanism 25. In addition, the solvent nozzle moving mechanism 25 and the two chemical liquid nozzle moving mechanisms 27 and 29 may include a multi-joint arm.

圖1所示之塗佈裝置1具備1個或複數個控制部51及操作部53。控制部51具備例如中央運算處理裝置(CPU)。控制部51控制塗佈裝置1之各構成。操作部53具備顯示部(例如液晶顯示器)、記憶部及輸入部。記憶部具備例如ROM(Read-Only Memory,唯讀記憶體)、RAM (Random-Access Memory,隨機存取記憶體)、及硬碟中之至少一種。輸入部具備鍵盤、滑鼠、及各種按鈕中之至少一種。於記憶部,記憶有塗佈處理之各種條件及塗佈裝置1之控制所需之動作程式等。The coating device 1 shown in FIG. 1 includes one or a plurality of control sections 51 and operation sections 53. The control unit 51 includes, for example, a central processing unit (CPU). The control unit 51 controls each configuration of the coating device 1. The operation unit 53 includes a display unit (for example, a liquid crystal display), a memory unit, and an input unit. The memory section includes, for example, at least one of ROM (Read-Only Memory), RAM (Random-Access Memory), and hard disk. The input unit includes at least one of a keyboard, a mouse, and various buttons. In the memory section, various conditions of the coating process and operation programs required for the control of the coating device 1 are stored.

<塗佈裝置1之動作> 其次,參照圖3所示之流程圖對塗佈裝置1之動作即塗佈方法進行說明。首先,未圖示之搬送機構將基板W搬送至保持旋轉部2上。保持旋轉部2之旋轉夾盤7真空吸附基板W之背面而保持基板W。<Operation of coating device 1> Next, the operation of the coating device 1, that is, the coating method will be described with reference to the flowchart shown in FIG. 3. First, a transport mechanism (not shown) transports the substrate W to the holding and rotating unit 2. The rotating chuck 7 holding the rotating part 2 vacuum-absorbs the back surface of the substrate W to hold the substrate W.

[步驟S01]預濕處理 控制部51一面藉由保持旋轉部2使具有複數個凹部H之基板W旋轉,一面自溶劑噴嘴3將溶劑SL噴出至基板W上。藉此,於溶劑SL進入基板W之凹部H之同時,於基板W上形成溶劑膜SL。再者,如圖4(a)所示,於基板W之正面形成有複數個凹部H。凹部H為例如空間、孔、及溝中之至少任一個。孔為例如導通孔(via)、通孔及接觸孔中至少任一個。[Step S01] Prewetting The control unit 51 rotates the substrate W having the plurality of recesses H by holding the rotation unit 2, and ejects the solvent SL onto the substrate W from the solvent nozzle 3. With this, the solvent film SL is formed on the substrate W while the solvent SL enters the concave portion H of the substrate W. Furthermore, as shown in FIG. 4( a ), a plurality of concave portions H are formed on the front surface of the substrate W. The recess H is, for example, at least any one of a space, a hole, and a groove. The hole is, for example, at least any one of a via, a via, and a contact hole.

對預濕處理進行具體說明。預濕處理之步驟具備移動噴出步驟、溢液步驟、逆移動步驟、薄膜化步驟。圖2所示之溶劑噴嘴移動機構25使溶劑噴嘴3自基板W外之待機位置移動至基板W之中心CT之上方(參照圖4(a))。又,保持旋轉部2使保持之基板W旋轉。The pre-wetting treatment will be specifically described. The steps of the pre-wetting treatment include a moving ejection step, an overflow step, a reverse moving step, and a thin film forming step. The solvent nozzle moving mechanism 25 shown in FIG. 2 moves the solvent nozzle 3 from the standby position outside the substrate W to above the center CT of the substrate W (see FIG. 4(a)). In addition, the holding rotation unit 2 rotates the held substrate W.

[移動噴出步驟] 移動噴出步驟於使溶劑噴嘴3移動至基板W之中心CT之上方後進行。首先,打開開關閥V1,自溶劑噴嘴3將溶劑SL噴出至以噴出用速度旋轉之基板W上。溶劑SL到達基板W上後,一面自溶劑噴嘴3將溶劑SL噴出至旋轉之基板W上,一面藉由溶劑噴嘴移動機構25使溶劑噴嘴3自基板W之中心CT之上方移動至基板W之周緣部E(端部或邊緣)之上方。再者,噴出用速度大於0 rpm且未達500 rpm,較佳為大於0 rpm且300 rpm以下。又,噴出用速度更佳為100 rpm以上且200 rpm以下。[Mobile ejection step] The moving and ejecting step is performed after moving the solvent nozzle 3 above the center CT of the substrate W. First, the on-off valve V1 is opened, and the solvent SL is ejected from the solvent nozzle 3 onto the substrate W rotating at the ejection speed. After the solvent SL reaches the substrate W, the solvent SL is ejected from the solvent nozzle 3 onto the rotating substrate W, and the solvent nozzle 3 is moved by the solvent nozzle moving mechanism 25 from above the center CT of the substrate W to the periphery of the substrate W Above part E (end or edge). Furthermore, the ejection speed is greater than 0 rpm and less than 500 rpm, preferably greater than 0 rpm and 300 rpm or less. In addition, the ejection speed is more preferably 100 rpm or more and 200 rpm or less.

溶劑噴嘴3向正下方噴出溶劑SL。又,以使自溶劑噴嘴3噴出之柱狀或棒狀之溶劑SL之到達區域A(參照圖4(b)之放大圖)遍及基板W之正面(上表面)之整個區域的方式,設定藉由溶劑噴嘴移動機構25使溶劑噴嘴3移動之移動速度。即,如圖4(c)所示,溶劑噴嘴3之移動速度設定為:於第n周及第n+1周,不空出如二點鏈線之柱狀之溶劑SL之間隙61,而成為實線之柱狀之溶劑SL,即無間隙61。藉此,因能夠使溶劑噴嘴3之噴出口與凹部H之各者對向,故溶劑SL容易進入(參照圖4(b)之放大圖中之箭頭)。其結果,能夠使溶劑SL進入遍及基板W之正面整體形成之複數個凹部H之大致全部中。再者,存在僅利用藉由基板W之旋轉產生之沿著基板W之正面之流動,難以使溶劑進入凹部H之情形。The solvent nozzle 3 ejects the solvent SL directly downward. In addition, by setting the columnar or rod-shaped solvent SL ejected from the solvent nozzle 3 to reach the area A (refer to the enlarged view of FIG. 4(b)) over the entire area of the front surface (upper surface) of the substrate W, set The moving speed of the solvent nozzle 3 by the solvent nozzle moving mechanism 25. That is, as shown in FIG. 4(c), the moving speed of the solvent nozzle 3 is set such that, at the nth week and the n+1th week, the gap 61 of the columnar solvent SL such as a two-dot chain line is not vacated, and becomes real. The solvent SL in the shape of a line is 61 without gaps. Thereby, since the discharge port of the solvent nozzle 3 can face each of the recessed parts H, the solvent SL can easily enter (refer to the arrow in the enlarged view of FIG. 4(b)). As a result, the solvent SL can enter substantially all of the plurality of recesses H formed over the entire front surface of the substrate W. Furthermore, there is a case where it is difficult to allow the solvent to enter the recess H using only the flow along the front surface of the substrate W generated by the rotation of the substrate W.

[溢液步驟] 圖5(a)係用於說明溢液步驟之圖。溢液步驟於使溶劑噴嘴3移動至基板W之周緣部E之上方後、即移動噴出步驟之後進行。首先,保持旋轉部2將基板W之旋轉速度降低至較噴出用速度小之溢液用速度,抑制向基板W外飛散(排出)之溶劑SL之量。藉此,保持旋轉部2將溶劑SL保持於基板W上。此時,於特定之時點,關閉開關閥V1,使溶劑SL自溶劑噴嘴3之噴出停止。其後,將溶劑SL保持於基板W上直至距以溢液用速度使基板W旋轉經過預先設定之時間。藉此,使溶劑SL能夠更容易地進入各凹部H。再者,溢液用速度較佳為0 rpm以上(包含靜止)且10 rpm以下。[Overflow step] Fig. 5(a) is a diagram for explaining the overflow step. The flooding step is performed after the solvent nozzle 3 is moved above the peripheral edge portion E of the substrate W, that is, after the moving and ejecting step. First, the holding rotation section 2 reduces the rotation speed of the substrate W to a speed for overflow that is smaller than the discharge speed, and suppresses the amount of the solvent SL that is scattered (discharged) out of the substrate W. With this, the holding rotary unit 2 holds the solvent SL on the substrate W. At this time, at a specific time, the on-off valve V1 is closed to stop the discharge of the solvent SL from the solvent nozzle 3. After that, the solvent SL is held on the substrate W until the substrate W is rotated at a speed for overflow for a predetermined time. This allows the solvent SL to enter each recess H more easily. Furthermore, the speed for overflow is preferably 0 rpm or higher (including static) and 10 rpm or lower.

[逆移動噴出步驟] 圖5(b)係用於說明逆移動噴出步驟之圖。逆移動噴出步驟於溢液步驟之後進行。逆移動噴出步驟係使溶劑噴嘴3於與移動噴出步驟之移動方向相反之方向上移動之步驟。保持旋轉部2使基板W之旋轉速度自溢液用速度恢復至上述噴出用速度。再次打開開關閥V1,自溶劑噴嘴3將溶劑SL噴出至以噴出用速度旋轉之基板W上。溶劑SL到達基板W上後,一面自溶劑噴嘴3噴出溶劑SL至旋轉之基板W上,一面藉由溶劑噴嘴移動機構25使溶劑噴嘴3自基板W之周緣部E之上方移動至基板W之中心CT之上方。藉此,能夠減少未充滿溶劑SL之凹部H。[Reverse moving ejection step] Fig. 5(b) is a diagram for explaining the reverse movement ejection procedure. The reverse moving ejection step is performed after the overflow step. The reverse moving ejection step is a step of moving the solvent nozzle 3 in a direction opposite to the moving direction of the moving ejection step. The holding rotation section 2 restores the rotation speed of the substrate W from the overflow speed to the ejection speed. The on-off valve V1 is opened again, and the solvent SL is ejected from the solvent nozzle 3 onto the substrate W rotating at the ejection speed. After the solvent SL reaches the substrate W, the solvent SL is ejected from the solvent nozzle 3 onto the rotating substrate W, and the solvent nozzle 3 is moved by the solvent nozzle moving mechanism 25 from above the peripheral portion E of the substrate W to the center of the substrate W Above CT. With this, the concave portion H that is not filled with the solvent SL can be reduced.

[薄膜化步驟] 圖5(c)係用於說明薄膜化步驟之圖。薄膜化步驟於逆移動噴出步驟之後進行。保持旋轉部2以較噴出用速度大之薄膜化用速度使基板W旋轉。此時,於特定之時點,關閉開關閥V1,使自溶劑噴嘴3之溶劑SL之噴出停止。藉由以薄膜化用速度使基板W旋轉,使多餘之溶劑SL向基板W外飛散。其後,使基板W之旋轉停止,使溶劑噴嘴3返回待機位置。薄膜化用速度為數百rpm~數千rpm,旋轉時間為例如1秒。[Thin film step] Fig. 5(c) is a diagram for explaining the step of thinning. The thin film forming step is performed after the reverse moving ejection step. The holding rotating portion 2 rotates the substrate W at a thinning speed higher than the discharging speed. At this time, at a specific time, the on-off valve V1 is closed to stop the discharge of the solvent SL from the solvent nozzle 3. By rotating the substrate W at a thinning speed, the excess solvent SL is scattered outside the substrate W. Thereafter, the rotation of the substrate W is stopped, and the solvent nozzle 3 is returned to the standby position. The speed for thin film formation is hundreds to thousands of rpm, and the rotation time is, for example, 1 second.

藉由如上之預濕處理,於將溶劑SL引入基板W之凹部H之同時(參照圖6),於基板W上形成溶劑膜SL。再者,亦可視需要將移動噴出步驟與逆移動噴出步驟調換。又,亦可省略溢液步驟。又,亦可省略移動噴出步驟或逆移動噴出步驟。此外,例如亦可進行複數次移動噴出步驟,或調換該等步驟之順序。又,只要能夠於將溶劑SL引入基板W之凹部H之同時於基板W上形成溶劑膜SL,則亦可不使用上述方法。例如自溶劑噴嘴3將溶劑SL噴出至以數十rpm旋轉之基板W之中心CT,將溶劑SL引入大致全部之凹部H中。其後,可使基板W以數百rpm旋轉,從而使多餘之溶劑SL向基板W外飛散。By the pre-wetting treatment as described above, the solvent SL is formed on the substrate W while introducing the solvent SL into the concave portion H of the substrate W (refer to FIG. 6 ). Furthermore, the moving ejection step and the reverse moving ejection step can also be exchanged as needed. In addition, the overflow step can also be omitted. Moreover, the moving discharge step or the reverse moving discharge step may be omitted. In addition, for example, a plurality of moving ejection steps may be performed, or the order of these steps may be reversed. Furthermore, as long as the solvent SL can be formed on the substrate W while introducing the solvent SL into the concave portion H of the substrate W, the above method may not be used. For example, the solvent SL is ejected from the solvent nozzle 3 to the center CT of the substrate W rotating at tens of rpm, and the solvent SL is introduced into substantially all of the concave portions H. After that, the substrate W can be rotated at several hundred rpm, so that the excess solvent SL is scattered outside the substrate W.

根據本步驟S01,一面使溶劑噴嘴3於基板W之半徑方向上移動,一面自溶劑噴嘴3將溶劑SL噴出至旋轉之基板W上。藉此,因能夠使溶劑噴嘴3之噴出口與凹部H之各者對向,故溶劑SL容易進入凹部H。According to this step S01, while the solvent nozzle 3 is moved in the radial direction of the substrate W, the solvent SL is ejected from the solvent nozzle 3 onto the rotating substrate W. Thereby, since the discharge port of the solvent nozzle 3 can face each of the recessed parts H, the solvent SL easily enters the recessed parts H.

[步驟S02]將第1藥液放置為環狀之步驟(第1周) 控制部51於形成溶劑膜SL後,不使藥液噴嘴4於基板W之半徑方向上移動,而自藥液噴嘴4將第1藥液C1噴出至旋轉之基板W之溶劑膜SL上。藉此,以與基板W之周緣部E相接之方式將第1藥液C1放置為環狀。[Step S02] Step of placing the first chemical solution in a ring shape (week 1) After forming the solvent film SL, the control unit 51 does not move the chemical liquid nozzle 4 in the radial direction of the substrate W, but ejects the first chemical liquid C1 from the chemical liquid nozzle 4 onto the solvent film SL of the rotating substrate W. Thereby, the first chemical solution C1 is placed in a ring shape so as to be in contact with the peripheral edge portion E of the substrate W.

進行具體說明。第1藥液噴嘴移動機構27使藥液噴嘴4自基板W外之待機位置移動至基板W之周緣部E之上方(參照圖6)。又,第1藥液噴嘴移動機構27使藥液噴嘴4於上下方向上移動。藉此,使藥液噴嘴4位於基板W之周緣部E之上方。又,將藥液噴嘴4之前端面4c與基板W之正面之間之間隙CL設定為1.0 mm以下(例如0.5 mm)。再者,若間隙CL變高,則於旋轉基板W時,自藥液噴嘴4噴出第1藥液C1而形成於藥液噴嘴4與基板W之正面之間之第1藥液C1之液柱變得不穩定,有產生液柱斷開而斷離之「斷液」之虞。Be specific. The first chemical liquid nozzle moving mechanism 27 moves the chemical liquid nozzle 4 from the standby position outside the substrate W to above the peripheral portion E of the substrate W (see FIG. 6 ). In addition, the first chemical liquid nozzle moving mechanism 27 moves the chemical liquid nozzle 4 in the vertical direction. As a result, the chemical liquid nozzle 4 is positioned above the peripheral edge portion E of the substrate W. In addition, the gap CL between the front end surface 4c of the chemical liquid nozzle 4 and the front surface of the substrate W is set to 1.0 mm or less (for example, 0.5 mm). Furthermore, when the gap CL becomes higher, when the substrate W is rotated, the first chemical solution C1 is ejected from the chemical solution nozzle 4 to form the liquid column of the first chemical solution C1 between the chemical solution nozzle 4 and the front surface of the substrate W It becomes unstable, and there is a risk of "liquid break" due to the breakage of the liquid column.

於第1周,如圖7(a)所示,以與基板W之周緣部E相接之方式將第1藥液C1放置為環狀。首先,以數十rpm之第1旋轉速度使基板W旋轉1周,且不使藥液噴嘴4於基板W之半徑方向上移動而使其停止。於該狀態下,打開開關閥V2,自位於基板W之周緣部E之上方之藥液噴嘴4噴出第1藥液C1。藉此,沿著基板W之周緣部E放置最外周之第1藥液C1。In the first week, as shown in FIG. 7( a ), the first chemical solution C1 is placed in a ring shape so as to be in contact with the peripheral edge portion E of the substrate W. First, the substrate W is rotated at a first rotation speed of several tens of rpm for one revolution without stopping the chemical liquid nozzle 4 in the radial direction of the substrate W. In this state, the on-off valve V2 is opened, and the first chemical solution C1 is ejected from the chemical solution nozzle 4 located above the peripheral portion E of the substrate W. As a result, the outermost first chemical solution C1 is placed along the peripheral edge portion E of the substrate W.

又,如圖7(b)之箭頭G所示,於將第1藥液C1於基板W之周緣部E附近放置為螺旋狀之情形時,產生未放置第1藥液C1之區域。藉此,於未放置第1藥液C1之區域(參照圖7(b)之箭頭G),無法良好地擴展第1藥液C1及第2藥液C2。然而,藉由以與基板W之周緣部E相接之方式將第1藥液C1放置為環狀,能夠防止產生未放置第1藥液C1之區域(參照圖7(b)之箭頭G)。As shown by arrow G in FIG. 7(b), when the first chemical solution C1 is placed in a spiral shape near the peripheral edge portion E of the substrate W, a region where the first chemical solution C1 is not placed occurs. As a result, in the area where the first chemical solution C1 is not placed (see arrow G in FIG. 7(b)), the first chemical solution C1 and the second chemical solution C2 cannot be expanded well. However, by placing the first chemical solution C1 in a ring shape so as to be in contact with the peripheral edge portion E of the substrate W, it is possible to prevent the area where the first chemical solution C1 is not placed (see arrow G in FIG. 7(b)) .

再者,作為不產生圖7(b)所示之箭頭G之未放置第1藥液C1之區域之方法,有以下方法。該方法係一面自藥液噴嘴4向基板W外噴出第1藥液C1,一面使藥液噴嘴4移動至基板W之上方。然而,該方法中,擔心例如於穿過基板W之內部與外部之交界(周緣部E)時,自藥液噴嘴4噴出之第1藥液C1之液柱不穩定,無法良好地放置後述步驟S03之螺旋狀之第1藥液C1。又,若第1藥液C1附著於基板W之側面,則例如會成為污染之原因。進而,若噴出第1藥液C1至基板W外,則第1藥液C1之使用量變多。因將第1藥液C1沿著周緣部E放置為環狀,故能夠防止該等問題。In addition, as a method of not generating the area where the first chemical solution C1 is not placed in the arrow G shown in FIG. 7(b), there are the following methods. In this method, the first chemical liquid C1 is ejected from the chemical liquid nozzle 4 to the outside of the substrate W, and the chemical liquid nozzle 4 is moved above the substrate W. However, in this method, for example, when passing through the boundary (peripheral portion E) between the inside and the outside of the substrate W, the liquid column of the first chemical liquid C1 ejected from the chemical liquid nozzle 4 is unstable, and the following steps cannot be placed well. S03 spiral first chemical solution C1. In addition, if the first chemical solution C1 adheres to the side surface of the substrate W, it may cause contamination, for example. Furthermore, when the first chemical solution C1 is ejected out of the substrate W, the usage amount of the first chemical solution C1 increases. Since the first chemical solution C1 is placed in a ring shape along the peripheral edge portion E, such problems can be prevented.

步驟S02~S04中之基板W之第1旋轉速度設定為藥液不會自基板W之周緣部E溢出之程度。又,第1旋轉速度可變(例如為13 rpm以上且40 rpm以下)。The first rotation speed of the substrate W in steps S02 to S04 is set to such an extent that the chemical solution does not overflow from the peripheral edge portion E of the substrate W. In addition, the first rotation speed is variable (for example, 13 rpm or more and 40 rpm or less).

[步驟S03]將第1藥液放置為螺旋狀之步驟(第2周以後) 控制部51於形成溶劑膜SL且將第1藥液C1放置為環狀後,一面使藥液噴嘴4於基板W之半徑方向上移動,一面自藥液噴嘴4將第1藥液C1噴出至旋轉之基板W之溶劑膜SL上。藉此,將第1藥液C1無間隙地以螺旋狀放置於基板W之溶劑膜SL上(參照圖8)。即,於步驟S02之環狀之第1藥液膜C1之內側形成螺旋狀之第1藥液膜C1。再者,圖8所示之螺旋之實線表示本步驟之藥液噴嘴4之軌跡。圖8所示之一點鏈線表示步驟S02之藥液噴嘴4之軌跡。再者,藥液噴嘴4移動至基板W之中心CT之上方後,關閉開關閥V2,停止第1藥液C1之供給。[Step S03] Step of placing the first chemical solution in a spiral shape (after the second week) After forming the solvent film SL and placing the first chemical solution C1 in a ring shape, the control unit 51 discharges the first chemical solution C1 from the chemical solution nozzle 4 while moving the chemical solution nozzle 4 in the radial direction of the substrate W On the solvent film SL of the rotating substrate W. Thereby, the first chemical solution C1 is placed on the solvent film SL of the substrate W in a spiral shape without a gap (see FIG. 8 ). That is, a spiral first chemical solution film C1 is formed inside the annular first chemical solution film C1 in step S02. Furthermore, the solid line of the spiral shown in FIG. 8 indicates the trajectory of the chemical liquid nozzle 4 in this step. The one-dot chain line shown in FIG. 8 represents the trajectory of the chemical liquid nozzle 4 in step S02. Furthermore, after the chemical solution nozzle 4 moves above the center CT of the substrate W, the on-off valve V2 is closed, and the supply of the first chemical solution C1 is stopped.

步驟S02、S03之放置第1藥液C1之步驟亦可對塗佈範圍進行區域劃分而於如下之條件下進行。即,於使藥液噴嘴4自基板W之周緣部E移動至中心CT時,例如一面使藥液噴嘴4之前端面4c與基板W之正面之間之間隙CL、藥液噴嘴4之移動速度、及基板W之旋轉速度變化,一面噴出第1藥液C1。藉此,例如能夠使第1藥液C1良好地遍佈。The steps of placing the first chemical solution C1 in steps S02 and S03 can also be performed by dividing the coating area under the following conditions. That is, when moving the chemical liquid nozzle 4 from the peripheral edge portion E of the substrate W to the center CT, for example, the clearance CL between the front end surface 4c of the chemical liquid nozzle 4 and the front surface of the substrate W, the moving speed of the chemical liquid nozzle 4, When the rotation speed of the substrate W changes, the first chemical solution C1 is ejected. With this, for example, the first chemical solution C1 can be spread well.

圖9表示基板W上之塗佈範圍之複數個區域之一例。將基板W之正面劃分為複數個區域。基於以基板W之中心CT為基準之位置決定各區域。如圖9所示,例如於基板W之正面設定有第1區域Z1~第5區域Z5、及第6區域(核心)Z6。再者,為了便於圖示,圖9之第1區域Z1~第6區域Z6表示大致之範圍。圖10係表示各區域Z1~Z6之塗佈條件之一例之圖。圖10之「噴嘴移動距離」項表示距基板W之中心CT之距離(mm)。基板W之直徑為300 mm。圖10中,例如第1區域Z1距基板W之中心CT之距離為143 mm,藥液噴嘴4停止不移動。第1區域Z1表示將第1藥液C1放置為步驟S02之環狀之步驟。FIG. 9 shows an example of a plurality of regions of the coating range on the substrate W. The front surface of the substrate W is divided into a plurality of areas. Each area is determined based on the position based on the center CT of the substrate W. As shown in FIG. 9, for example, the first area Z1 to the fifth area Z5 and the sixth area (core) Z6 are set on the front surface of the substrate W. In addition, for the convenience of illustration, the 1st zone Z1-the 6th zone Z6 of FIG. 9 have shown the approximate range. FIG. 10 is a diagram showing an example of the application conditions of the respective zones Z1 to Z6. The “nozzle movement distance” item in FIG. 10 represents the distance (mm) from the center CT of the substrate W. The diameter of the substrate W is 300 mm. In FIG. 10, for example, the distance between the first zone Z1 and the center CT of the substrate W is 143 mm, and the chemical liquid nozzle 4 stops and does not move. The first zone Z1 represents the step of placing the first chemical solution C1 in the ring shape of step S02.

首先,參照圖11對藥液噴嘴4之前端面4c與基板W之正面之間之間隙CL進行說明。圖11中,存在2個位置PS1、PS2。位置PS2位於較位置PS1更靠中心CT側。於此情形時,位置PS2之間隙CL設定為較位置PS1之間隙CL大。即,藥液噴嘴4自基板W之周緣部E越靠近中心CT側將間隙CL設定得越大。First, the gap CL between the front end surface 4c of the chemical liquid nozzle 4 and the front surface of the substrate W will be described with reference to FIG. In FIG. 11, there are two positions PS1 and PS2. The position PS2 is located closer to the center CT than the position PS1. In this case, the gap CL at the position PS2 is set larger than the gap CL at the position PS1. That is, the chemical liquid nozzle 4 sets the gap CL larger from the peripheral edge portion E of the substrate W toward the center CT side.

例如於第1區域Z1及第2區域Z2,將間隙CL設為0.5 mm。伴隨藥液噴嘴4向中心CT側移動,階段性地增大間隙CL。然後,於第6區域Z6,將間隙CL設為3.0 mm。For example, in the first zone Z1 and the second zone Z2, the gap CL is set to 0.5 mm. As the chemical liquid nozzle 4 moves toward the center CT side, the gap CL is gradually increased. Then, in the sixth zone Z6, the gap CL is set to 3.0 mm.

對改變間隙CL之效果進行說明。自基板W之中心CT越向基板W之周緣部E側,藥液噴嘴4與基板W之間之相對旋轉速度越快。因此,第1藥液C1到達基板W之溶劑膜SL上時,施加於第1藥液C1之向旋轉方向之力變大,容易引起斷液。再者,斷液係指噴出之第1藥液C1斷開而斷離。因此,當藥液噴嘴4位於周緣部E側時使間隙CL變小。藉此,能夠防止斷液。又,當藥液噴嘴4位於中心CT側時使間隙CL變大。藉此,能夠防止第1藥液C1附著於藥液噴嘴4。The effect of changing the gap CL will be described. The faster the relative rotation speed between the chemical liquid nozzle 4 and the substrate W from the center CT of the substrate W toward the peripheral edge portion E side of the substrate W. Therefore, when the first chemical solution C1 reaches the solvent film SL of the substrate W, the force applied to the first chemical solution C1 in the direction of rotation becomes large, and liquid breakage is likely to occur. In addition, the liquid breakage means that the ejected first chemical liquid C1 is disconnected and cut off. Therefore, when the chemical liquid nozzle 4 is located on the peripheral edge portion E side, the gap CL becomes smaller. This can prevent liquid breakage. In addition, when the chemical liquid nozzle 4 is positioned on the center CT side, the gap CL becomes larger. This can prevent the first chemical solution C1 from adhering to the chemical solution nozzle 4.

其次,對基板W之旋轉速度(第1旋轉速度)進行說明。圖11中,位置PS2之旋轉速度設定為較位置PS1之旋轉速度快。即,旋轉速度設定為藥液噴嘴4自基板W之周緣部E越靠近中心CT側越快。Next, the rotation speed (first rotation speed) of the substrate W will be described. In FIG. 11, the rotation speed of the position PS2 is set to be faster than the rotation speed of the position PS1. That is, the rotation speed is set so that the closer to the center CT side from the peripheral edge portion E of the substrate W the chemical liquid nozzle 4 is.

例如於第1區域Z1及第2區域Z2,將基板W之旋轉速度設為13 rpm。伴隨藥液噴嘴4向中心CT側移動,階段性地增大基板W之旋轉速度。然後,於第6區域Z6,將基板W之旋轉速度設為40 rpm。For example, in the first zone Z1 and the second zone Z2, the rotation speed of the substrate W is set to 13 rpm. As the chemical liquid nozzle 4 moves toward the center CT side, the rotation speed of the substrate W is increased stepwise. Then, in the sixth zone Z6, the rotation speed of the substrate W is set to 40 rpm.

對改變旋轉速度之效果進行說明。自基板W之中心CT越向基板W之周緣部E側靠近,藥液噴嘴4與基板W之間之相對旋轉速度越快。因此,第1藥液C1到達基板W之溶劑膜SL上時,施加於第1藥液C1之向旋轉方向之力變大,容易引起斷液。因此,當藥液噴嘴4位於周緣部E側時使基板W之旋轉速度變慢。藉此,能夠防止斷液。又,當藥液噴嘴4位於中心CT側時,使基板W之旋轉速度變快。藉此,能夠防止過多噴出藥液。The effect of changing the rotation speed will be described. As the center CT of the substrate W approaches the peripheral edge E side of the substrate W, the relative rotation speed between the chemical liquid nozzle 4 and the substrate W increases. Therefore, when the first chemical solution C1 reaches the solvent film SL of the substrate W, the force applied to the first chemical solution C1 in the direction of rotation becomes large, and liquid breakage is likely to occur. Therefore, when the chemical liquid nozzle 4 is located on the peripheral edge portion E side, the rotation speed of the substrate W is slowed. This can prevent liquid breakage. In addition, when the chemical liquid nozzle 4 is positioned on the center CT side, the rotation speed of the substrate W is increased. With this, it is possible to prevent excessive discharge of the chemical liquid.

再者,藥液之噴出速度(噴出速率、單位:ml/s)使用相對於基板W之旋轉速度不發生斷液之(能夠抑制斷液之)最低之速度。藉由使用此種噴出速度,能夠節約藥液。In addition, the discharge speed of the chemical solution (discharge rate, unit: ml/s) is the lowest speed that does not cause liquid breakage (which can suppress liquid breakage) with respect to the rotation speed of the substrate W. By using this ejection speed, the liquid medicine can be saved.

其次,對藥液噴嘴4之移動速度進行說明。如圖9所示,因自基板W之中心CT越向周緣部E側靠近塗佈範圍越大,故第1藥液C1之噴出時間變長。因此,圖11中,位置PS2之藥液噴嘴4之移動速度較位置PS1之藥液噴嘴4之移動速度快。即,藥液噴嘴4自基板W之周緣部E越靠近中心CT則將藥液噴嘴4之移動速度設定為越快。藉此,能夠良好地形成螺旋狀之第1藥液膜C1。Next, the moving speed of the chemical liquid nozzle 4 will be described. As shown in FIG. 9, since the coating range increases from the center CT of the substrate W toward the peripheral edge portion E, the discharge time of the first chemical solution C1 becomes long. Therefore, in FIG. 11, the moving speed of the chemical liquid nozzle 4 at the position PS2 is faster than the moving speed of the chemical liquid nozzle 4 at the position PS1. That is, the closer the chemical liquid nozzle 4 is from the peripheral edge portion E of the substrate W to the center CT, the faster the moving speed of the chemical liquid nozzle 4 is set. With this, the spiral first chemical solution film C1 can be formed well.

又,較佳為螺旋狀之第1藥液膜C1中之各周之第1藥液膜C1(包含第1周之環狀之第1藥液膜C1)於基板W之半徑方向上與相鄰之周之第1藥液膜C1不產生間隙且相互重疊。即,較佳為螺旋狀之第1藥液C1係以無間隙之方式放置於溶劑膜SL上。In addition, it is preferable that the first chemical liquid film C1 (including the first chemical liquid film C1 in the ring shape of the first week) of each cycle in the spiral first chemical liquid film C1 is adjacent to the radial direction of the substrate W The first chemical liquid film C1 of Zhou Zhi overlaps each other without a gap. That is, it is preferable that the spiral first chemical solution C1 is placed on the solvent film SL without a gap.

圖12(a)為較佳之例。例如第n-1周之第1藥液膜C1與第n周之第1藥液膜C1相互重疊。另一方面,圖12(b)為欠佳之例。例如第n-1周之第1藥液膜C1與第n周之第1藥液膜C1分離,產生間隙。若各周之第1藥液膜C1與相鄰之周之第1藥液膜C1相互間產生間隙,則存在於使基板W高速旋轉而擴展第1藥液C1及後述第2藥液C2時,藥液避開該間隙或存在於該間隙之凹部H流動之情形。因此,藉由不產生該間隙,能夠良好地擴展第1藥液C1及第2藥液C2。進而,若相互重疊,則能夠更確實、良好地擴展第1藥液C1及第2藥液C2。Figure 12(a) is a preferred example. For example, the first chemical liquid film C1 of the n-1th week and the first chemical liquid film C1 of the nth week overlap each other. On the other hand, Fig. 12(b) is an example of poor. For example, the first chemical liquid film C1 of the n-1th week is separated from the first chemical liquid film C1 of the nth week, and a gap occurs. If a gap is formed between the first chemical liquid film C1 of each week and the first chemical liquid film C1 of an adjacent week, it may exist when the substrate W is rotated at high speed to expand the first chemical liquid C1 and the second chemical liquid C2 described later , The liquid medicine avoids the gap or the recess H existing in the gap flows. Therefore, by not generating the gap, the first chemical solution C1 and the second chemical solution C2 can be expanded well. Furthermore, if they overlap each other, the first chemical solution C1 and the second chemical solution C2 can be expanded more reliably and well.

藉由步驟S02、S03之處理,將第1藥液C1以環狀及螺旋狀放置於基板W之溶劑膜SL上。再者,因溶劑膜SL與第1藥液膜C1親和,第1藥液膜C1係介隔溶劑膜SL形成於基板W上,或直接形成於基板W上。Through the processes of steps S02 and S03, the first chemical solution C1 is placed on the solvent film SL of the substrate W in a ring shape and a spiral shape. Furthermore, the first chemical liquid film C1 is formed on the substrate W via the solvent film SL due to the affinity between the solvent film SL and the first chemical liquid film C1, or directly on the substrate W.

[步驟S04]第2藥液之噴出 使噴出第1藥液C1之藥液噴嘴4自基板W之上方移動至待機位置。代替藥液噴嘴4,藥液噴嘴5移動至基板W之上方。第2藥液噴嘴移動機構29使藥液噴嘴5自基板W外之待機位置移動至基板W之中心CT之上方位置。其後,無間隙地以螺旋狀形成第1藥液C1後,控制部51向以第1速度旋轉之基板W之中心CT自藥液噴嘴5將第2藥液C2噴出至第1藥液膜C1上,該第2藥液C2較第1藥液C1黏度高。即,藉由打開圖1所示之開關閥V3,如圖13(a)所示,自藥液噴嘴5瞄準基板W之中心CT,開始將第2藥液C2噴出至第1藥液C1上。[Step S04] ejection of the second chemical solution The chemical solution nozzle 4 that ejects the first chemical solution C1 is moved from above the substrate W to the standby position. Instead of the chemical liquid nozzle 4, the chemical liquid nozzle 5 moves above the substrate W. The second chemical liquid nozzle moving mechanism 29 moves the chemical liquid nozzle 5 from a standby position outside the substrate W to a position above the center CT of the substrate W. Thereafter, after forming the first chemical solution C1 in a spiral shape without a gap, the control unit 51 ejects the second chemical solution C2 from the chemical solution nozzle 5 to the first chemical solution film toward the center CT of the substrate W rotating at the first speed On C1, the second chemical solution C2 has a higher viscosity than the first chemical solution C1. That is, by opening the on-off valve V3 shown in FIG. 1, as shown in FIG. 13(a), aiming at the center CT of the substrate W from the chemical liquid nozzle 5, the second chemical liquid C2 starts to be ejected onto the first chemical liquid C1 .

[步驟S05]分別擴展第1藥液及第2藥液之步驟 參照圖13(a)~圖13(d)對第2藥液C2擴展之情況進行說明。如圖13(a)所示,自藥液噴嘴5噴出之第2藥液C2到達第1藥液膜C1上後,控制部51一面噴出第2藥液C2,一面使基板W以較第1速度大之第2速度旋轉。更詳細而言,到達第1藥液C1上之第2藥液C2佈滿於基板W之中心CT之第1藥液C1後,以第2速度使基板W旋轉。藉此,於將第1藥液C1擴展至基板之周緣部E側且使多餘之第1藥液C1向基板W外飛散之同時,將第2藥液膜C2向周緣部E側擴展。再者,第2速度例如為1000 rpm。[Step S05] Steps of expanding the first chemical solution and the second chemical solution respectively The case where the second chemical solution C2 expands will be described with reference to FIGS. 13(a) to 13(d). As shown in FIG. 13(a), after the second chemical liquid C2 ejected from the chemical liquid nozzle 5 reaches the first chemical liquid film C1, the control unit 51 ejects the second chemical liquid C2 while making the substrate W lower than the first The second speed with the highest speed rotates. More specifically, after the second chemical solution C2 that has reached the first chemical solution C1 is covered with the first chemical solution C1 at the center CT of the substrate W, the substrate W is rotated at the second speed. Thereby, the first chemical solution C1 is expanded to the peripheral edge portion E side of the substrate and the excess first chemical solution C1 is scattered outside the substrate W, and the second chemical solution film C2 is expanded to the peripheral edge portion E side. In addition, the second speed is, for example, 1000 rpm.

因第1藥液C1較第2藥液C2黏度低,故第1藥液C1較第2藥液更容易移動。又,第1藥液膜C1已形成至離心力之影響較大之基板W之周緣部E。因此,當以第2速度使基板W旋轉時,第1藥液C1以同心圓狀自基板W之中心CT側移動至基板W之周緣部E側,使多餘之第1藥液C1向基板W外飛散。藉由該第1藥液C1之移動,與第1藥液C1接著之第2藥液C2被第1藥液C1牽引,擴展為同心圓狀。此時,自藥液噴嘴5噴出而到達之第2藥液C2以到達順序相對順利地擴展。再者,第1藥液C1及第2藥液C2以圖13(b)、圖13(c)、圖13(d)之順序擴展。又,第2藥液C2亦藉由基板W之旋轉而擴展。Since the first medical solution C1 has a lower viscosity than the second medical solution C2, the first medical solution C1 is easier to move than the second medical solution. In addition, the first chemical solution film C1 has been formed to the peripheral edge portion E of the substrate W having a large influence of centrifugal force. Therefore, when the substrate W is rotated at the second speed, the first chemical solution C1 moves concentrically from the center CT side of the substrate W to the peripheral edge portion E side of the substrate W, so that the excess first chemical solution C1 is directed toward the substrate W Scattered outside. By the movement of the first chemical solution C1, the second chemical solution C2 following the first chemical solution C1 is drawn by the first chemical solution C1 and expands into a concentric shape. At this time, the second chemical liquid C2 discharged from the chemical liquid nozzle 5 and reaching the second chemical liquid C2 expands relatively smoothly in the order of arrival. In addition, the first chemical solution C1 and the second chemical solution C2 are expanded in the order of FIG. 13(b), FIG. 13(c), and FIG. 13(d). In addition, the second chemical solution C2 is also expanded by the rotation of the substrate W.

又,藉由以第2速度旋轉基板W,使第1藥液C1於基板W上流動。因此,將進入凹部H之溶劑SL替換為第1藥液C1,進而,將第1藥液C1填充至凹部H(參照圖13(d)之放大圖)。再者,因溶劑SL已進入凹部H,故容易將溶劑SL填充至凹部H。又,藉由以第2速度旋轉基板W,主要於凹部H以外之基板W上,自基板W之中心CT側向基板W之周緣部E側將第1藥液C1逐漸替換為第2藥液C2。Further, by rotating the substrate W at the second speed, the first chemical solution C1 flows on the substrate W. Therefore, the solvent SL entering the concave portion H is replaced with the first chemical solution C1, and then the first chemical solution C1 is filled in the concave portion H (refer to an enlarged view of FIG. 13(d)). Furthermore, since the solvent SL has entered the concave portion H, it is easy to fill the concave portion H with the solvent SL. Further, by rotating the substrate W at the second speed, the first chemical solution C1 is gradually replaced with the second chemical solution from the center CT side of the substrate W to the peripheral edge portion E side of the substrate W mainly on the substrate W other than the recess H C2.

藉由以第2速度旋轉基板W使第2藥液C2之擴展延伸至周緣部E時,關閉圖1所示之開關閥V3,使自藥液噴嘴5之第2藥液C2之噴出停止。再者,使第2藥液C2之噴出停止之時點為任意。例如可於藉由旋轉進行之第2藥液C2之擴展即將延伸至周緣部E之前停止,亦可於藉由旋轉進行之第2藥液C2之擴展充分延伸至周緣部E後停止。使第2藥液C2之噴出停止後,使藥液噴嘴5自基板W之上方返回待機位置。When the substrate W is rotated at the second speed to extend the extension of the second chemical solution C2 to the peripheral edge portion E, the switching valve V3 shown in FIG. 1 is closed, and the ejection of the second chemical solution C2 from the chemical solution nozzle 5 is stopped. In addition, the timing of stopping the ejection of the second chemical solution C2 is arbitrary. For example, the expansion of the second chemical solution C2 by rotation may be stopped immediately before extending to the peripheral edge E, or it may be stopped after the expansion of the second chemical solution C2 by rotation is sufficiently extended to the peripheral edge E. After stopping the discharge of the second chemical solution C2, the chemical solution nozzle 5 is returned from above the substrate W to the standby position.

藉由停止第2藥液C2之噴出後亦以第2速度旋轉基板W,使多餘之第1藥液C1及第2藥液C2飛散至基板W外。又,上下調整旋轉速度而使自基板W之中心CT至基板W之周緣部E之膜厚平坦。例如於周緣部E側之膜厚較中心CT側之膜厚大時,降低旋轉速度;於周緣部E側之膜厚較中心CT側之膜厚小時,提高旋轉速度。再者,於基板W上之凹部H以外之區域,可僅形成第2藥液膜C2,亦可形成第1藥液膜C1及第2藥液膜C2(參照後述之圖14(c))。By stopping the ejection of the second chemical solution C2, the substrate W is also rotated at the second speed, so that the excess first chemical solution C1 and the second chemical solution C2 are scattered outside the substrate W. Further, the rotation speed is adjusted up and down so that the film thickness from the center CT of the substrate W to the peripheral edge portion E of the substrate W is flat. For example, when the film thickness on the E side of the peripheral portion is larger than the film thickness on the center CT side, the rotation speed is reduced; when the film thickness on the E side of the peripheral portion is smaller than the film thickness on the center CT side, the rotation speed is increased. In addition, in the area other than the recess H on the substrate W, only the second chemical liquid film C2 may be formed, or the first chemical liquid film C1 and the second chemical liquid film C2 may be formed (see FIG. 14(c) described later) .

[步驟S06]膜厚調整(主旋轉) 於使第2藥液膜C2(或第1藥液膜C1及第2藥液膜C2)平坦化後,控制部51使基板W以第3速度旋轉。藉此,調整第2藥液膜C2(或第1藥液膜C1及第2藥液膜C2)之厚度。第3速度為數百rpm(例如400~500 rpm)。根據所期望之膜厚變更第3速度。以特定之時間及第3速度使基板W旋轉後,保持旋轉部2停止旋轉。[Step S06] Film thickness adjustment (main rotation) After the second chemical liquid film C2 (or the first chemical liquid film C1 and the second chemical liquid film C2) is flattened, the control unit 51 rotates the substrate W at the third speed. With this, the thickness of the second chemical liquid film C2 (or the first chemical liquid film C1 and the second chemical liquid film C2) is adjusted. The third speed is hundreds of rpm (for example, 400 to 500 rpm). The third speed is changed according to the desired film thickness. After rotating the substrate W at a specific time and at the third speed, the holding rotation unit 2 stops rotating.

圖14(a)係表示膜厚調整後之第2藥液膜C2等之狀態之剖視圖。於凹部H充滿第1藥液C1。又,於基板W之正面,形成有特定厚度之第2藥液膜C2。再者,如圖14(b)所示,凹部H之至少一部分亦可由第2藥液C2充滿。又,如圖14(c)所示,第2藥液膜C2亦可介隔第1藥液膜C1形成於基板W上。14(a) is a cross-sectional view showing the state of the second chemical liquid film C2 and the like after the film thickness is adjusted. The concave portion H is filled with the first chemical solution C1. In addition, on the front surface of the substrate W, a second chemical liquid film C2 of a specific thickness is formed. Furthermore, as shown in FIG. 14(b), at least a part of the recess H may be filled with the second chemical solution C2. Moreover, as shown in FIG. 14(c), the second chemical liquid film C2 may be formed on the substrate W via the first chemical liquid film C1.

藉由以上之步驟形成第2藥液膜C2後,自未圖示之噴嘴噴出溶劑SL,執行EBR(Edge Bead Removal,邊緣球狀物移除)處理(亦稱為邊緣清洗處理),或執行背面清洗處理。EBR處理係去除形成於基板W之周緣部E附近之第1藥液膜C1及第2藥液膜C2之處理。背面清洗處理係噴出洗淨液而對基板W之背面(下面)進行洗淨之處理。其後,於使基板W之旋轉停止之狀態下,保持旋轉部2解除基板W之保持。未圖示之基板搬送機構自保持旋轉部2搬出基板W。對充滿凹部H之第1藥液C1及基板W上之第2藥液膜C2進行乾燥(或煅燒(烘烤))。乾燥後,因第1藥液C1與第2藥液C2為相同種類,故如圖15所示,第1藥液C1及第2藥液C2於乾燥(或煅燒)後成為難以區分之一體之膜。乾燥(或煅燒)後之藥液膜以符號C3表示。After the second chemical liquid film C2 is formed by the above steps, the solvent SL is ejected from a nozzle (not shown), and EBR (Edge Bead Removal) processing (also called edge cleaning processing) is performed, or Back cleaning process. The EBR process is a process of removing the first chemical liquid film C1 and the second chemical liquid film C2 formed near the peripheral portion E of the substrate W. The back surface cleaning process is a process of spraying a cleaning liquid to wash the back surface (lower surface) of the substrate W. Thereafter, in a state where the rotation of the substrate W is stopped, the holding rotation unit 2 releases the holding of the substrate W. The substrate transfer mechanism (not shown) transfers the substrate W from the holding rotary unit 2. The first chemical solution C1 filled with the recess H and the second chemical solution film C2 on the substrate W are dried (or calcined (baked)). After drying, since the first chemical solution C1 and the second chemical solution C2 are of the same type, as shown in FIG. 15, the first chemical solution C1 and the second chemical solution C2 become one body that is difficult to distinguish after drying (or calcination) membrane. The chemical film after drying (or calcination) is represented by symbol C3.

<第1藥液膜之黏度> 本發明中,於基板W之正面(上表面)之整個區域形成第1藥液膜C1。藉此,容易於基板W上擴展第2藥液C2,並使第1藥液C1充滿凹部H。於第1藥液C1之黏度與第2藥液C2之黏度相同為1000 cP以上之情形時,即便形成如圖6所示之溶劑膜SL,亦難以使第1藥液C1埋入凹部H。因此,第1藥液C1使用較第2藥液C2黏度低者,於第1藥液C1之黏度為700 cP以下之情形時,第1藥液C1更加容易進入凹部H。<Viscosity of the first chemical liquid film> In the present invention, the first chemical solution film C1 is formed on the entire front surface (upper surface) of the substrate W. This makes it easy to spread the second chemical solution C2 on the substrate W and fill the recess H with the first chemical solution C1. In the case where the viscosity of the first chemical solution C1 and the viscosity of the second chemical solution C2 are the same or more than 1000 cP, even if the solvent film SL as shown in FIG. 6 is formed, it is difficult to embed the first chemical solution C1 into the concave portion H. Therefore, when the viscosity of the first chemical solution C1 is lower than that of the second chemical solution C2, when the viscosity of the first chemical solution C1 is 700 cP or less, the first chemical solution C1 is more likely to enter the recess H.

另一方面,於第1藥液C1之黏度較300 cP小之情形時,先形成之第1藥液膜C1具有容易乾燥之性質。即,於一面自藥液噴嘴4噴出第1藥液C1,一面使藥液噴嘴4自基板W之周緣部E附近之上方移動至基板W之中心CT之上方時,先形成於周緣部E之第1藥液膜C1容易乾燥。On the other hand, when the viscosity of the first chemical solution C1 is less than 300 cP, the first chemical solution film C1 formed first has the property of being easily dried. That is, when the first chemical solution C1 is ejected from the chemical solution nozzle 4 while moving the chemical solution nozzle 4 from above the vicinity of the peripheral edge portion E of the substrate W to above the center CT of the substrate W, it is first formed on the peripheral edge portion E The first chemical liquid film C1 is easy to dry.

例如於約10 cP之黏度之情形時,如圖16(a)所示,於步驟S02、S03所放置之第1藥液C1落入凹部H,且於進入凹部H之狀態下乾燥。於此情形時,不僅第1藥液C1及第2藥液C2難以擴展,而且於進入凹部H之第1藥液C1已經乾燥之情形時,即便旋轉基板W亦難以使第1藥液C1及第2藥液C2充滿凹部H。又,如圖16(b)所示,於使第1藥液C1之黏度變得較圖16(a)之情形時之黏度高時,第1藥液C1不進入凹部H。然而,先形成於周緣部E之第1藥液C1會乾燥。因此,如圖16(b)中之一點鏈線LN1所示,其後形成之藥液膜之厚度於乾燥部分變大。For example, in the case of a viscosity of about 10 cP, as shown in FIG. 16(a), the first chemical solution C1 placed in steps S02 and S03 falls into the recess H, and is dried in a state where it enters the recess H. In this case, not only is it difficult for the first chemical solution C1 and the second chemical solution C2 to expand, but also when the first chemical solution C1 entering the recess H has been dried, it is difficult for the first chemical solution C1 and the The second chemical solution C2 fills the recess H. Further, as shown in FIG. 16(b), when the viscosity of the first chemical solution C1 becomes higher than that in the case of FIG. 16(a), the first chemical solution C1 does not enter the concave portion H. However, the first chemical solution C1 formed first in the peripheral edge portion E is dried. Therefore, as shown by a dotted line LN1 in FIG. 16(b), the thickness of the chemical liquid film formed thereafter becomes larger at the dry portion.

因此,對第1藥液C1之黏度要求容易藉由基板W之旋轉進入且不易乾燥。因此,較佳為於藉由第2速度之基板W之旋轉擴展第1藥液C1及第2藥液C2時,第1藥液C1覆蓋已裝有溶劑SL之凹部H,且先形成之周緣部E附近之第1藥液C1未乾燥而具有流動性。因此,能夠如圖16(c)所示之二點鏈線LN2所示,均勻地形成藥液膜。Therefore, the viscosity requirement of the first chemical solution C1 is easy to enter by the rotation of the substrate W and is not easy to dry. Therefore, it is preferable that when the first chemical solution C1 and the second chemical solution C2 are expanded by the rotation of the substrate W at the second speed, the first chemical solution C1 covers the concave portion H in which the solvent SL has been filled, and the peripheral edge formed first The first chemical solution C1 near the part E is not dried but has fluidity. Therefore, as shown by the two-dot chain line LN2 shown in FIG. 16(c), the chemical liquid film can be formed uniformly.

根據本實施例,第1藥液C1無間隙地以螺旋狀放置於基板W之溶劑膜SL上。以基板W之第2速度進行之旋轉分別擴展第1藥液C1及第2藥液C2。第1藥液C1因牽引較第1藥液C1黏度高之第2藥液,故輔助擴展第2藥液C2。又,第2藥液C2放置於較第2藥液C2黏度低之第1藥液C1上。又,形成於基板W之正面上之凹部H中裝有溶劑SL。因此,藉由基板W之旋轉,能夠使第1藥液C1較第2藥液C2更容易進入凹部H。其結果,能夠藉由相對少量之溶劑SL及高黏度藥液,於在基板W上較厚地形成藥液膜之同時,使藥液膜充滿形成於基板W之正面上之凹部H。According to this embodiment, the first chemical solution C1 is placed on the solvent film SL of the substrate W in a spiral shape without a gap. The rotation at the second speed of the substrate W expands the first chemical solution C1 and the second chemical solution C2, respectively. Since the first medical solution C1 draws the second medical solution having a higher viscosity than the first medical solution C1, it assists in expanding the second medical solution C2. In addition, the second chemical solution C2 is placed on the first chemical solution C1 having a lower viscosity than the second chemical solution C2. In addition, the solvent SL is contained in the recess H formed on the front surface of the substrate W. Therefore, by the rotation of the substrate W, the first chemical solution C1 can enter the recess H more easily than the second chemical solution C2. As a result, it is possible to fill the concave portion H formed on the front surface of the substrate W with a relatively small amount of the solvent SL and the high-viscosity chemical liquid while forming the chemical liquid film thickly on the substrate W.

又,自藥液噴嘴5噴出之第2藥液C2到達第1藥液膜C1上後,一面噴出第2藥液C2,一面使基板W以較第1速度快之第2速度旋轉。第1藥液C1之擴展輔助擴展較第1藥液C1黏度高之第2藥液C2。此時,因自藥液噴嘴5噴出之第2藥液C2依序擴展,故能夠順利地擴展第2藥液C2。After the second chemical solution C2 ejected from the chemical solution nozzle 5 reaches the first chemical solution film C1, the second chemical solution C2 is ejected while rotating the substrate W at a second speed faster than the first speed. The expansion of the first medical solution C1 assists the expansion of the second medical solution C2 having a higher viscosity than the first medical solution C1. At this time, since the second chemical liquid C2 ejected from the chemical liquid nozzle 5 is sequentially expanded, the second chemical liquid C2 can be smoothly expanded.

本發明不侷限於上述實施形態,可如下所述進行變化實施。The present invention is not limited to the above-mentioned embodiment, and can be implemented with variations as described below.

(1)於上述實施例中,步驟S05係於自藥液噴嘴5噴出之第2藥液C2到達第1藥液C1上後,一面噴出第2藥液C2,一面使基板W以較第1速度快之第2速度旋轉。藉此,分別擴展第1藥液C1及第2藥液C2。亦可如下進行變更。(1) In the above embodiment, step S05 is that after the second chemical solution C2 ejected from the chemical solution nozzle 5 reaches the first chemical solution C1, the second chemical solution C2 is ejected while the substrate W is lower than the first Rotate at the second speed with the highest speed. This expands the first chemical solution C1 and the second chemical solution C2, respectively. It can also be changed as follows.

即,擴展步驟S05之第2藥液C2之步驟亦可僅噴出預先設定之量之第2藥液C2且停止第2藥液C2之噴出後,使基板W以第2速度旋轉。即,如圖17所示,擴展第2藥液C2之步驟首先噴出預先設定之量之第2藥液C2至第1藥液膜C1上,於第1藥液膜C1上形成第2藥液C2之液體蓄積(覆液)PD。然後,關閉開關閥V3且停止第2藥液C2之噴出後,使基板W以第2速度旋轉。藉此,能夠於將預先設定之量之第2藥液C2覆蓋於第1藥液C1上之狀態下,藉由基板W之旋轉擴展第1藥液C1及第2藥液C2。其結果,與實施例相同,能夠藉由相對少量之溶劑及高黏度藥液,於在基板W上較厚地形成藥液膜之同時,使藥液膜充滿形成於基板W之正面上之凹部H。That is, in the step of expanding the second chemical solution C2 in step S05, only the predetermined amount of the second chemical solution C2 may be ejected and the ejection of the second chemical solution C2 may be stopped to rotate the substrate W at the second speed. That is, as shown in FIG. 17, the step of expanding the second chemical solution C2 first ejects a predetermined amount of the second chemical solution C2 to the first chemical solution film C1 to form the second chemical solution on the first chemical solution film C1 Liquid accumulation (covering) PD of C2. Then, after closing the on-off valve V3 and stopping the ejection of the second chemical solution C2, the substrate W is rotated at the second speed. With this, it is possible to expand the first chemical solution C1 and the second chemical solution C2 by the rotation of the substrate W in a state where the predetermined amount of the second chemical solution C2 is covered on the first chemical solution C1. As a result, as in the embodiment, it is possible to fill the recess H formed on the front surface of the substrate W with a relatively small amount of solvent and a high-viscosity chemical while thickly forming the chemical film on the substrate W .

(2)於上述實施例及變化例(1)中,自藥液噴嘴4噴出第1藥液C1時,藉由第1藥液噴嘴移動機構27,使藥液噴嘴4自基板W之周緣部E(端部或邊緣)之上方移動至基板W之中心CT之上方。對於此,亦可使藥液噴嘴4反向移動。即,自藥液噴嘴4噴出第1藥液C1時,亦可藉由第1藥液噴嘴移動機構27使藥液噴嘴4自基板W之中心CT之上方移動至基板W之周緣部E之上方。藥液噴嘴4自中心CT之上方移動後,代替藥液噴嘴4配置藥液噴嘴5。因此,能夠使開始第2藥液C2之噴出之時點變早。(2) In the above embodiment and modified example (1), when the first chemical liquid C1 is ejected from the chemical liquid nozzle 4, the chemical liquid nozzle 4 is moved from the peripheral portion of the substrate W by the first chemical liquid nozzle moving mechanism 27 E (end or edge) moves above the center CT of the substrate W. For this, the chemical liquid nozzle 4 may also be moved in the reverse direction. That is, when the first chemical liquid C1 is ejected from the chemical liquid nozzle 4, the chemical liquid nozzle 4 can also be moved from above the center CT of the substrate W to above the peripheral edge portion E of the substrate W by the first chemical liquid nozzle moving mechanism 27. . After the chemical liquid nozzle 4 moves from above the center CT, the chemical liquid nozzle 5 is arranged instead of the chemical liquid nozzle 4. Therefore, the timing of starting the ejection of the second chemical solution C2 can be made earlier.

(3)於上述實施例及各變化例中,改變藥液噴嘴4之前端面4c與基板W之正面之間之間隙CL、基板W之旋轉速度、及藥液噴嘴4之移動速度等條件而將第1藥液C1放置為螺旋狀及環狀。然而,亦可視需要不改變某一條件。即,可伴隨藥液噴嘴4之移動改變間隙CL、基板W之旋轉速度、及藥液噴嘴4之移動速度中任一個而將第1藥液C1放置為螺旋狀及環狀。(3) In the above embodiments and various modifications, the conditions such as the gap CL between the front end surface 4c of the chemical liquid nozzle 4 and the front surface of the substrate W, the rotation speed of the substrate W, and the moving speed of the chemical liquid nozzle 4 are changed. The first chemical solution C1 is placed in a spiral shape and a ring shape. However, a certain condition may not be changed as necessary. That is, the first chemical liquid C1 may be placed in a spiral shape or a ring shape by changing any of the clearance CL, the rotation speed of the substrate W, and the moving speed of the chemical liquid nozzle 4 as the chemical liquid nozzle 4 moves.

(4)於上述實施例及各變化例中,溶劑噴嘴移動機構25使溶劑噴嘴3移動。並且,第1藥液噴嘴移動機構27使藥液噴嘴4移動,第2藥液噴嘴移動機構29使藥液噴嘴5移動。對於此,例如第1藥液噴嘴移動機構27亦可使溶劑噴嘴3及2個藥液噴嘴4、5中至少2個移動。又,例如第1藥液噴嘴移動機構27亦可以可交換地固持噴嘴3、4、5之方式構成。(4) In the above-mentioned embodiment and each modification, the solvent nozzle moving mechanism 25 moves the solvent nozzle 3. In addition, the first chemical liquid nozzle moving mechanism 27 moves the chemical liquid nozzle 4, and the second chemical liquid nozzle moving mechanism 29 moves the chemical liquid nozzle 5. For this, for example, the first chemical liquid nozzle moving mechanism 27 may move at least two of the solvent nozzle 3 and the two chemical liquid nozzles 4 and 5. In addition, for example, the first chemical liquid nozzle moving mechanism 27 may be configured to hold the nozzles 3, 4, and 5 interchangeably.

(5)於上述實施例及各變化例中,保持旋轉部2於自藥液噴嘴4噴出第1藥液C1時使基板W旋轉。對於此,第1藥液噴嘴移動機構27亦可一面使藥液噴嘴4於半徑方向上移動,一面使藥液噴嘴4相對於基板W繞旋轉軸AX1旋轉。即,亦可為自藥液噴嘴4噴出第1藥液C1時,保持旋轉部2停止基板W之旋轉,且第1藥液噴嘴移動機構27使藥液噴嘴4呈環狀及螺旋狀地移動。(5) In the above-mentioned embodiment and each modified example, the holding rotary unit 2 rotates the substrate W when the first chemical liquid C1 is ejected from the chemical liquid nozzle 4. In this regard, the first chemical liquid nozzle moving mechanism 27 may rotate the chemical liquid nozzle 4 with respect to the substrate W about the rotation axis AX1 while moving the chemical liquid nozzle 4 in the radial direction. That is, when the first chemical solution C1 is ejected from the chemical solution nozzle 4, the holding rotary unit 2 stops the rotation of the substrate W, and the first chemical solution nozzle moving mechanism 27 causes the chemical solution nozzle 4 to move in a ring shape and spirally. .

(6)於上述實施例及各變化例中,開始自藥液噴嘴5噴出第2藥液C2時,基板W以數十rpm旋轉。對於此,亦可於靜止不旋轉之狀態之基板W上開始第2藥液C2之噴出。於此情形時,亦可於自藥液噴嘴5噴出之第2藥液C2到達靜止之基板W之第1藥液C1上後,或者於靜止之基板W上進行溢液且停止第2藥液C2之噴出後,以第2速度使基板W旋轉。(6) In the above-mentioned embodiment and each modified example, when the second chemical liquid C2 starts to be discharged from the chemical liquid nozzle 5, the substrate W rotates at several tens of rpm. For this, the ejection of the second chemical liquid C2 may also be started on the substrate W in a state where it is not rotating. In this case, after the second chemical solution C2 ejected from the chemical solution nozzle 5 reaches the first chemical solution C1 of the stationary substrate W, or the overflow is performed on the stationary substrate W and the second chemical solution is stopped After the ejection of C2, the substrate W is rotated at the second speed.

1‧‧‧塗佈裝置 2‧‧‧保持旋轉部 3‧‧‧溶劑噴嘴 4‧‧‧藥液噴嘴 4a‧‧‧噴出口 4c‧‧‧前端面 5‧‧‧藥液噴嘴 5a‧‧‧噴出口 7‧‧‧旋轉夾盤 8‧‧‧旋轉驅動部 9‧‧‧護罩 13‧‧‧溶劑供給源 15‧‧‧配管 17‧‧‧第1藥液供給源 19‧‧‧藥液配管 21‧‧‧第2藥液供給源 23‧‧‧藥液配管 25‧‧‧溶劑噴嘴移動機構 27‧‧‧第1藥液噴嘴移動機構 29‧‧‧第2藥液噴嘴移動機構 31‧‧‧臂 33‧‧‧軸 35‧‧‧旋轉驅動部 37‧‧‧臂 39‧‧‧上下移動部 41‧‧‧平面移動部 43‧‧‧臂 45‧‧‧上下移動部 47‧‧‧平面移動部 51‧‧‧控制部 53‧‧‧操作部 61‧‧‧間隙 AX1‧‧‧旋轉軸 AX2‧‧‧旋轉軸 C1‧‧‧第1藥液(或第1藥液膜) C2‧‧‧第2藥液(或第2藥液膜) CT‧‧‧基板W之中心 E‧‧‧基板W之周緣部 G‧‧‧箭頭 H‧‧‧凹部 P1‧‧‧泵 P2‧‧‧泵 P3‧‧‧泵 PD‧‧‧液體蓄積 PS1‧‧‧位置 PS2‧‧‧位置 SL‧‧‧溶劑(或溶劑膜) V1‧‧‧開關閥 V2‧‧‧開關閥 V3‧‧‧開關閥 W‧‧‧基板 X‧‧‧方向 Y‧‧‧方向 Z‧‧‧方向 Z1‧‧‧第1區域 Z2‧‧‧第2區域 Z3‧‧‧第3區域 Z4‧‧‧第4區域 Z5‧‧‧第5區域 Z6‧‧‧第6區域1‧‧‧Coating device 2‧‧‧ keep the rotating part 3‧‧‧Solvent nozzle 4‧‧‧drug nozzle 4a‧‧‧Spray outlet 4c‧‧‧Front face 5‧‧‧Medicinal liquid nozzle 5a‧‧‧Spray outlet 7‧‧‧ Rotating chuck 8‧‧‧rotation drive 9‧‧‧Shield 13‧‧‧Solvent supply source 15‧‧‧Piping 17‧‧‧The first chemical liquid supply source 19‧‧‧ liquid medicine piping 21‧‧‧Second chemical liquid supply source 23‧‧‧ liquid medicine piping 25‧‧‧ Solvent nozzle moving mechanism 27‧‧‧ First chemical liquid nozzle moving mechanism 29‧‧‧Second chemical liquid nozzle moving mechanism 31‧‧‧arm 33‧‧‧axis 35‧‧‧rotation drive 37‧‧‧arm 39‧‧‧Move up and down 41‧‧‧Plane Mobile Department 43‧‧‧arm 45‧‧‧Move up and down 47‧‧‧Plane Mobile Department 51‧‧‧Control Department 53‧‧‧Operation Department 61‧‧‧Gap AX1‧‧‧rotation axis AX2‧‧‧rotation axis C1‧‧‧1st medicinal solution (or 1st medicinal solution film) C2‧‧‧ 2nd medicinal solution (or 2nd medicinal solution film) CT‧‧‧Substrate W Center E‧‧‧Circumferential part of substrate W G‧‧‧arrow H‧‧‧recess P1‧‧‧Pump P2‧‧‧Pump P3‧‧‧Pump PD‧‧‧Liquid accumulation PS1‧‧‧Location PS2‧‧‧Location SL‧‧‧Solvent (or solvent film) V1‧‧‧ On-off valve V2‧‧‧ On-off valve V3‧‧‧ On-off valve W‧‧‧Substrate X‧‧‧ direction Y‧‧‧ direction Z‧‧‧ direction Z1‧‧‧ Zone 1 Z2‧‧‧ Zone 2 Z3‧‧‧ Zone 3 Z4‧‧‧ Zone 4 Z5‧‧‧ Zone 5 Z6‧‧‧ Region 6

圖1係實施例之塗佈裝置之概略構成圖。 圖2係表示溶劑噴嘴移動機構及2個藥液噴嘴移動機構之俯視圖。 圖3係表示塗佈裝置之動作之流程圖。 圖4(a)係用於說明預濕處理之縱剖視圖,圖4(b)、圖4(c)係用於說明移動噴出步驟之縱剖視圖。 圖5(a)係用於說明溶劑之溢液步驟之縱剖視圖,圖5(b)係用於說明逆移動噴出步驟之縱剖視圖,圖5(c)係用於說明薄膜化步驟之縱剖視圖。 圖6係表示第1藥液噴嘴之配置及溶劑膜之情況之縱剖視圖。 圖7(a)、圖7(b)係用於說明將第1藥液放置為環狀之步驟之俯視圖。 圖8係用於說明將第1藥液放置為螺旋狀之步驟之俯視圖。 圖9係表示圓形基板中之塗佈範圍之複數個區域之一例的俯視圖。 圖10係表示各區域之塗佈條件之一例之圖。 圖11係用於說明第1藥液噴嘴之前端面與圓形基板之正面之間之間隙的縱剖視圖。 圖12(a)、圖12(b)係用於說明放置環狀及螺旋狀之第1藥液之步驟的縱剖視圖。 圖13(a)~圖13(d)係用於說明噴出第2藥液之步驟及分別擴展第1藥液及第2藥液之步驟之縱剖視圖。 圖14(a)係表示膜厚調整後之第2藥液膜等之狀態之縱剖視圖,圖14(b)、圖14(c)係表示(a)之變化例之縱剖視圖。 圖15係表示乾燥(煅燒)後之藥液膜之圖。 圖16(a)~圖16(c)係用於說明第1藥液之黏度之縱剖視圖。 圖17係表示形成於第1藥液上之第2藥液之溢液之情況的縱剖視圖。FIG. 1 is a schematic configuration diagram of a coating apparatus of an embodiment. 2 is a plan view showing a solvent nozzle moving mechanism and two chemical liquid nozzle moving mechanisms. 3 is a flowchart showing the operation of the coating device. FIG. 4(a) is a longitudinal cross-sectional view for explaining the pre-wetting treatment, and FIGS. 4(b) and 4(c) are longitudinal cross-sectional views for explaining the moving ejection step. 5(a) is a longitudinal cross-sectional view for explaining the solvent overflow step, FIG. 5(b) is a longitudinal cross-sectional view for explaining the reverse moving ejection step, and FIG. 5(c) is a longitudinal cross-sectional view for explaining the thin film forming step . 6 is a longitudinal cross-sectional view showing the arrangement of the first chemical liquid nozzle and the solvent film. 7(a) and 7(b) are plan views for explaining the step of placing the first chemical solution in a ring shape. 8 is a plan view for explaining the step of placing the first chemical solution in a spiral shape. FIG. 9 is a plan view showing an example of a plurality of regions of a coating range on a circular substrate. FIG. 10 is a diagram showing an example of coating conditions in each area. 11 is a longitudinal cross-sectional view for explaining the gap between the front end surface of the first chemical liquid nozzle and the front surface of the circular substrate. 12(a) and 12(b) are longitudinal cross-sectional views for explaining the steps of placing the ring-shaped and spiral-shaped first chemical solution. 13(a) to 13(d) are longitudinal cross-sectional views for explaining the steps of ejecting the second chemical solution and the steps of expanding the first and second chemical solutions, respectively. 14(a) is a longitudinal cross-sectional view showing the state of the second chemical liquid film after the film thickness is adjusted, and FIGS. 14(b) and 14(c) are longitudinal cross-sectional views showing a modification of (a). Fig. 15 is a diagram showing a chemical liquid film after drying (calcination). 16(a) to 16(c) are longitudinal cross-sectional views for explaining the viscosity of the first chemical solution. FIG. 17 is a longitudinal cross-sectional view showing the overflow of the second chemical liquid formed on the first chemical liquid.

2‧‧‧保持旋轉部 2‧‧‧ keep the rotating part

5‧‧‧藥液噴嘴 5‧‧‧Medicinal liquid nozzle

7‧‧‧旋轉夾盤 7‧‧‧ Rotating chuck

AX1‧‧‧旋轉軸 AX1‧‧‧rotation axis

C1‧‧‧第1藥液(或第1藥液膜) C1‧‧‧1st medicinal solution (or 1st medicinal solution film)

C2‧‧‧第2藥液(或第2藥液膜) C2‧‧‧ 2nd medicinal solution (or 2nd medicinal solution film)

E‧‧‧基板W之周緣部 E‧‧‧Circumferential part of substrate W

H‧‧‧凹部 H‧‧‧recess

SL‧‧‧溶劑(或溶劑膜) SL‧‧‧Solvent (or solvent film)

W‧‧‧基板 W‧‧‧Substrate

Claims (6)

一種塗佈方法,其特徵在於包括以下步驟:一面使於正面具有複數個凹部之圓形基板旋轉,一面自溶劑噴嘴噴出溶劑至上述圓形基板上,藉此於溶劑進入上述凹部之同時,於上述圓形基板上形成溶劑膜;形成上述溶劑膜後,一面使第1藥液噴嘴於上述圓形基板之半徑方向移動,一面自上述第1藥液噴嘴對與上述第1藥液噴嘴相對旋轉之上述圓形基板之上述溶劑膜上噴出第1藥液,藉此將上述第1藥液無間隙地以螺旋狀放置於上述圓形基板之上述溶劑膜上;於將上述第1藥液無間隙地以螺旋狀放置後、且於藉由上述圓形基板之旋轉擴展上述第1藥液並使多餘之上述第1藥液向上述圓形基板外飛散前,開始自第2藥液噴嘴朝向上述圓形基板之中心於上述第1藥液上噴出較上述第1藥液黏度高之第2藥液;及藉由使上述圓形基板旋轉,朝向上述圓形基板之周緣部側同時擴展上述第1藥液及上述第2藥液。 A coating method, comprising the steps of: rotating a circular substrate having a plurality of recesses on the front side, while spraying solvent from the solvent nozzle onto the circular substrate, thereby allowing the solvent to enter the recesses while A solvent film is formed on the circular substrate; after the solvent film is formed, the first chemical liquid nozzle is rotated relative to the first chemical liquid nozzle from the first chemical liquid nozzle pair while moving the first chemical liquid nozzle in the radial direction of the circular substrate The first chemical solution is ejected on the solvent film of the circular substrate, thereby placing the first chemical solution in a spiral shape on the solvent film of the circular substrate without a gap; After being placed in a spiral shape with a gap, and before expanding the first chemical solution by the rotation of the circular substrate and scattering the excess first chemical solution out of the circular substrate, the direction from the second chemical solution nozzle begins The center of the circular substrate ejects a second chemical solution having a higher viscosity than the first chemical solution onto the first chemical solution; and by rotating the circular substrate, the above is simultaneously expanded toward the peripheral edge side of the circular substrate The first chemical solution and the second chemical solution described above. 如請求項1之塗佈方法,其中同時擴展上述第1藥液及上述第2藥液之步驟係於自上述第2藥液噴嘴噴出之上述第2藥液到達上述第1藥液上後,一面噴出上述第2藥液,一面使上述圓形基板旋轉。 The coating method according to claim 1, wherein the step of simultaneously expanding the first chemical solution and the second chemical solution is after the second chemical solution ejected from the second chemical solution nozzle reaches the first chemical solution, While ejecting the second chemical solution, the circular substrate is rotated. 如請求項1之塗佈方法,其中 同時擴展上述第1藥液及上述第2藥液之步驟係僅噴出預先設定量之上述第2藥液且停止上述第2藥液之噴出後,使上述圓形基板旋轉。 The coating method according to claim 1, wherein The step of simultaneously expanding the first chemical solution and the second chemical solution is to eject only a predetermined amount of the second chemical solution and stop the ejection of the second chemical solution, and then rotate the circular substrate. 如請求項1至3中任一項之塗佈方法,其中上述第2藥液噴嘴具有圓形或正多邊形之噴出口。 The coating method according to any one of claims 1 to 3, wherein the second chemical liquid nozzle has a circular or regular polygonal discharge port. 如請求項1至3中任一項之塗佈方法,其中上述第2藥液係與上述第1藥液同種類之藥液。 The coating method according to any one of claims 1 to 3, wherein the second chemical solution is the same kind of chemical solution as the first chemical solution. 如請求項1至3中任一項之塗佈方法,其中形成上述溶劑膜之步驟係一面使上述溶劑噴嘴於上述圓形基板之半徑方向上移動,一面自上述溶劑噴嘴噴出溶劑至旋轉之上述圓形基板上。 The coating method according to any one of claims 1 to 3, wherein the step of forming the solvent film is to spray the solvent from the solvent nozzle to the rotating surface while moving the solvent nozzle in the radial direction of the circular substrate On a round substrate.
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