JP5199419B2 - Substrate processing apparatus and substrate processing method - Google Patents

Description

The present invention relates to an apparatus and method for removing unwanted materials from a substrate. The various substrates include a semiconductor wafer, a glass substrate for a liquid crystal display device, a PDP (glass substrate for a plasma display panel), and the like.

In the manufacturing process of a semiconductor device, after forming a metal thin film such as a copper thin film on the entire surface of the front surface, back surface and end surface of a semiconductor wafer (hereinafter simply referred to as “wafer”), unnecessary portions of the metal thin film are removed by etching. Processing may be performed. For example, the copper thin film for forming the wiring may be formed in the device formation region on the surface of the wafer, and the peripheral portion (
For example, since the copper thin film formed on the back surface and the end surface is unnecessary, a process of removing the unnecessary copper thin film is performed.

In addition, even when a metal thin film is selectively formed on the surface of the wafer, there is a process for removing metal ions adhering to the region other than the region on the wafer surface where the metal thin film is formed, and to the end surface and back surface of the wafer. It may be done.
For example, an apparatus for removing a metal thin film or metal ions formed on the peripheral edge of a wafer surface includes a spin chuck that rotates while the wafer is held almost horizontally, and a wafer surface held by the spin chuck. An edge rinse nozzle that discharges an etching solution toward the peripheral edge of the wafer, and a pure water nozzle that supplies pure water to substantially the center of the surface of the wafer held by the spin chuck.

When removing the metal thin film, the wafer is rotated by the spin chuck, and an etching solution is discharged from the edge rinse nozzle toward the peripheral portion of the surface of the rotating wafer.
While the etching solution is being discharged from the edge rinse nozzle, pure water is supplied from the pure water nozzle toward the center of the wafer surface.
As a result, the central area (device formation area) of the wafer surface is covered with pure water, and the etching solution supplied from the edge rinse nozzle to the wafer surface moves from the central area of the wafer surface to the periphery. It is swept away by pure water flowing toward it. Therefore, even if the mist of the etching solution scatters toward the device formation region at the center of the surface of the wafer, the mist of the etching solution is not likely to be directly attached to the metal thin film formed on the device formation region.
Therefore, there is no possibility that the metal thin film in the device forming region is corroded by the etching solution.

However, recently, it has been found that pure water covering the device formation region may cause damage to the device built in the device formation region.
SUMMARY OF THE INVENTION An object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can satisfactorily remove unnecessary materials on a substrate.

In order to achieve the above object, the invention according to claim 1 includes a chuck (11) for holding a substrate (W), a rotation drive mechanism (114) for rotating the chuck around a rotation axis (O), A chemical solution discharge means (122a) for discharging a chemical solution for removing unnecessary substances on the substrate toward a chemical solution supply position (Pe) set in the peripheral region of the substrate held by the chuck, and held by the chuck A pure water discharge means (122b) for discharging pure water toward a pure water supply position (Pd) closer to the rotation axis than the chemical liquid supply position in the peripheral region of the substrate, And the pure water discharge means are arranged side by side on a straight line extending from the center of the substrate held by the chuck toward the peripheral edge, and at least while the chemical liquid discharge means discharges the chemical liquid, the pure water discharge means Stage discharges pure water, the substrate processing apparatus.

According to the second aspect of the present invention, the chuck (11) for holding the substrate (W), the rotation driving mechanism (114) for rotating the chuck around the rotation axis (O), and the chuck are held by the chuck (11). A chemical solution discharge means (122a) for discharging a chemical solution for removing unnecessary substances on the substrate toward a chemical solution supply position (Pe) set in a peripheral region of the substrate, and a peripheral edge of the substrate held by the chuck A pure water discharge means (122b) for discharging pure water toward a pure water supply position (Pd) closer to the rotation axis than the chemical liquid supply position, and the chemical liquid discharge means and the pure water Discharging means are arranged side by side along the direction from the periphery of the substrate held by the chuck toward the inside, and the pure water discharging means discharges pure water at least while the chemical discharging means discharges the chemical. Discharge A substrate processing apparatus.

According to these configurations, the chemical solution can be supplied uniformly to the region outside the chemical solution supply position on the substrate while preventing the chemical solution from flowing toward the central portion of the substrate, and an unnecessary object on the substrate. Can be removed satisfactorily.
According to a third aspect of the present invention, in the surface of the substrate, a region to which pure water is supplied from the pure water discharge unit is wider than a region to which a chemical solution is supplied from the chemical solution discharge unit. The substrate processing apparatus according to claim 1.

Invention of Claim 4 is arrange | positioned so that the said chemical | medical solution supply position may be located in the area | region of the pure water discharged from the said pure water discharge means and flowing through the surface of a board | substrate. The substrate processing apparatus according to claim 1.
According to these configurations, by the flow of pure water, since the chemical solution supplied to the outer position swept than the supply position of the pure water, the chemical solution can be further prevented from flowing toward the center portion of the substrate.

The invention according to claim 5 is the substrate processing according to any one of claims 1 to 4 , wherein the chemical solution discharge unit and the pure water discharge unit are directed to be inclined in a direction away from the center of the substrate. Device.
According to this configuration, it is possible to satisfactorily prevent the chemical solution and pure water supplied on the substrate from flowing toward the central portion of the substrate.

The invention described in claim 6, wherein the pure water discharge means, the is controlled to eject pure water at a timing earlier than discharge of liquid chemical with a chemical solution discharging means, any one of claims 1 to 5 The substrate processing apparatus according to claim 1.
According to this arrangement, the flow of pure water, since the chemical solution supplied to the outside of the chemical supply position swept than pure water supply position, the chemical liquid can be further prevented from flowing toward the center portion of the substrate.

According to a seventh aspect of the present invention, the substrate processing apparatus includes a blocking plate (23) for preventing scattering of the chemical solution and pure water supplied to the substrate from the chemical solution discharge unit and the pure water discharge unit , respectively. The chemical solution discharge means and the pure water discharge means may be provided on the blocking plate.
In addition, as described in claim 8 , the substrate processing apparatus may include a blocking plate (23) that moves relatively between a position close to the substrate upper surface and a position away from the substrate upper surface. .

The invention described in claim 9 is the substrate processing apparatus according to claim 8 , wherein an inert gas is discharged between the blocking plate and the substrate.
The invention according to claim 10, the surface of the substrate, the pure water supply from the position toward the inert gas supply a position closer to the rotation axis inert gas injection means for supplying an inert gas (122c) further It includes a substrate processing apparatus according to any one of claims 1-9.

According to these configurations, even when a mist of a chemical solution is generated, the mist can be blown out of the substrate by the inert gas. Therefore, there is no possibility that the central portion of the substrate is corroded by chemical mist. Furthermore, since pure water is not supplied to the central portion of the substrate, the central portion is not likely to be damaged by pure water .
According to the eleventh aspect of the present invention, while the substrate (W) is rotated around the rotation axis (O), unnecessary substances on the substrate are directed toward the chemical solution supply position (Pe) set in the peripheral region of the substrate. A peripheral region of the substrate at least during a period in which the chemical solution is discharged from the chemical solution discharge means while rotating the substrate around the rotation axis while discharging the chemical solution to be removed from the chemical solution discharge means (122a) a is, and a pure water discharge step of discharging the pure water from the pure water supply position toward the (Pd) pure water supply discharge means close to the axis of rotation than the chemical supply position (122b), the pure water in the region of supplied to the discharge hand stage or et substrate of pure water, and supplies the chemical liquid ejecting unit or et drug solution, sweep away away the chemical liquid from the center of the substrate, a substrate processing method.

  According to this method, the claims1 andThe effect similar to the effect described in relation to 2 can be achieved.
Claim12The invention described in the abovePure waterThe discharge means isThe chemical solutionDischarge meansDispensing chemicals byEarlier thanPure waterControlled to dispense11The substrate processing method according to claim 1.

According to this method, an effect similar to the effect described in relation to the sixth aspect can be achieved.
According to a thirteenth aspect of the present invention, a process of supplying an inert gas toward an inert gas supply position closer to the rotation axis than the pure water supply position on the surface of the substrate is performed in parallel with the pure water discharge process. The substrate processing method according to claim 11, wherein the substrate processing method is executed .

According to this method, an effect similar to the effect described in relation to claim 10 can be achieved.

1 is a diagram schematically showing a configuration of a substrate processing apparatus according to an embodiment of the present invention. It is a figure which shows the structure of the lower surface of the interruption | blocking board shown in FIG. It is a figure for demonstrating the process in the substrate processing apparatus of FIG. It is a figure which shows the structure of the substrate processing apparatus which concerns on a reference form schematically. It is a figure for demonstrating the process in the substrate processing apparatus of FIG.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a diagram schematically showing a configuration of a substrate processing apparatus according to one embodiment (first embodiment) of the present invention. In this substrate processing apparatus, a metal thin film (for example, a copper thin film) is formed on the surface and end face of a wafer W, which is a substantially circular substrate, and then unnecessary on the peripheral edge and end face of the surface of the wafer W. An apparatus for removing a metal thin film.

The substrate processing apparatus is provided with a vacuum chuck 11. The vacuum chuck 11 includes a chuck shaft 111 disposed substantially vertically and a disk-shaped suction base 112 fixed substantially horizontally to the upper end of the chuck shaft 111. For example, the chuck shaft 111 is formed in a cylindrical shape and has an intake passage 113 therein.
The upper end of is communicated with a suction port formed on the upper surface of the suction base 112 through a suction path formed in the suction base 112. The chuck shaft 111 receives a rotational force from a rotational drive mechanism 114 including a motor.

Thus, the vacuum chuck 11 evacuates the inside of the intake passage 113 in a state where the wafer W is placed on the suction base 112 with the front surface (device forming surface) facing upward, whereby the back surface ( The non-device forming surface) can be vacuum-adsorbed and held almost horizontal. In this state, a rotational force is input from the rotational drive mechanism 114 to the chuck shaft 111, whereby the wafer W sucked and held by the suction base 112 is perpendicular to the center (the center axis of the chuck shaft 111) O. Can be rotated around.

Above the vacuum chuck 11, a substantially conical blocking plate 12 and a blocking plate cleaning nozzle 13 for discharging pure water for cleaning the inclined surface of the blocking plate 12 are arranged.
The blocking plate 12 has a lower surface 121 facing the vacuum chuck 11 that is a circular plane having substantially the same diameter as the wafer W, and the lower surface 121 is opposed to the upper surface of the wafer W held by the vacuum chuck 11. It is provided to do. Further, the blocking plate 12 is provided so as to be able to move up and down, and is largely retracted upward when the wafer W is loaded into and unloaded from the vacuum chuck 11, and is lowered to a position close to the wafer W when processing the wafer W.

As shown in FIG. 2, the lower surface 121 of the shielding plate 12 has a triple concentric circumference C1, C2, C3 centered on the center CE of the lower surface 121 and a plurality of radially extending radially from the center CE. For example, a small circular opening 122 is formed at each intersection with the straight line. Concentric circumference C
1, C 2, and C 3 are set at the peripheral edge of the lower surface 121, and the opening 122 is not formed in the central portion of the lower surface 121.

Inside the blocking plate 12, an etchant supply path 123, a pure water supply path 124, and a nitrogen gas supply path 12 through which an etchant, pure water, and nitrogen gas to be supplied to the wafer W respectively flow.
5 is formed.
The etchant supply path 123 has an inclined portion 123a that is inclined downward as it goes outward in the radial direction of the lower surface 121 of the blocking plate 12. At the tip of the inclined portion 123a, the concentric circumferences C1, C2, and C3 It communicates with the opening 122a disposed on the circumference C1 having the largest diameter. The inclination angle of the inclined portion 123a is such that a straight line extending in parallel with the inclined portion 123a from the opening 122a surrounds the device forming region at the center of the surface of the wafer W (for example, about 3 mm wide from the periphery of the wafer W). And an angle that intersects the surface of the wafer W held by the vacuum chuck 11 at the etching solution supply position Pe set on the circumference centering on the rotation axis O of the wafer W. Has been. As a result, the etchant flowing through the etchant supply path 123 passes through the opening 122a.
Are discharged in the direction of inclination of the inclined portion 123a (the direction inclined so as to approach the wafer W toward the outer radius of rotation of the wafer W) and supplied to the etching solution supply position Pe on the surface of the wafer W.

The pure water supply path 124 has an inclined part 124a inclined substantially parallel to the inclined part 123a of the etching solution supply path 123. At the tip of the inclined part 124a, the circumference having the next largest diameter after the circumference C1. It communicates with the opening 122b disposed on C2. Accordingly, the pure water supply path 124
Is discharged in a direction parallel to the discharge direction of the etchant from the opening 122b, and on the wafer peripheral region, the rotation axis of the wafer W is higher than the etchant supply position Pe on the surface of the wafer W. It is supplied to a pure water supply position Pd close to O. The pure water supply position Pd is set on a circumference around the rotation axis O of the wafer W.

Further, the nitrogen gas supply path 125 has an inclined part 125a inclined substantially parallel to the inclined part 123a of the etching solution supply path 123, and the tip of the inclined part 125a is placed on the circumference C3 having the smallest diameter. It communicates with the arranged opening 122c. Thus, the nitrogen gas flowing in the nitrogen gas supply path 125 is discharged from the opening 122c in the discharge direction parallel to the direction of the etchant, the rotational axis O of the wafer W than pure water supply position Pd on the surface of the wafer W Is supplied to a nitrogen gas supply position Pn close to. The nitrogen gas supply position Pn is set on a circumference around the rotation axis O of the wafer W.

FIG. 3 is an illustrative view for explaining processing in the substrate processing apparatus. The wafer W to be processed is loaded by a transfer robot (not shown) and delivered to the vacuum chuck 11. At this time, the blocking plate 12 (see FIG. 1) is largely retracted upward so as not to hinder the loading of the wafer W. When the wafer W is held on the vacuum chuck 11, the blocking plate 12 is brought close to the surface of the wafer W, and the vacuum chuck 11 (that is, the wafer W) starts to rotate at a predetermined rotation speed.

Thereafter, as shown in FIG. 3A, the discharge of nitrogen gas is started from the opening 122c, and nitrogen gas is supplied to the nitrogen gas supply position Pn on the surface of the wafer W obliquely from above. Further, after the discharge of the nitrogen gas is started, subsequently, as shown in FIG. 3B, the discharge of pure water is started from the opening 122b, and the pure water supply position Pd on the surface of the wafer W is inclined obliquely from above. Pure water is supplied. Further, after the discharge of pure water is started, as shown in FIG. 3C, the discharge of the etching liquid is started from the opening 122a, and the etching liquid is obliquely applied to the etching liquid supply position Pe on the surface of the wafer W from the upper side. Supplied.

When the supply of nitrogen gas, pure water, and etching solution to the surface of the wafer W is continued for a predetermined time, the discharge of the etching solution from the opening 122a is first stopped as shown in FIG. Subsequently, as shown in FIG. 3E, the discharge of pure water from the opening 122b is stopped, and thereafter, the discharge of nitrogen gas from the opening 122c is stopped as shown in FIG. 3F. This completes the process for removing the unnecessary metal thin film from the peripheral edge and the end face of the wafer W, and the wafer W after this process is moved by the transfer robot (not shown) after the shielding plate 12 is retreated upward. It is carried out from the back surface of W toward an apparatus for removing unnecessary metal ions.

As described above, in the substrate processing apparatus according to this embodiment, the etching solution for removing the metal thin film from the peripheral edge and the end surface of the surface of the wafer W is the etching solution supply position Pe on the surface of the rotating wafer W. Further, the wafer W is above the etching solution supply position Pe.
From the opening 122a disposed inward in the rotational radius direction. Thus, the etching solution supplied to the etching solution supply position Pe is prevented from flowing toward the central portion of the wafer W, and the region outside the rotational radius direction of the wafer W (the wafer W) from the etching solution supply position Pe.
The region where the metal thin film on the surface of the surface is to be removed) The etching liquid can be supplied uniformly to the EA, and the metal thin film formed on the region EA and the end face can be satisfactorily removed.

In addition, by starting and stopping the supply (discharge) of nitrogen gas, pure water, and etchant in the order described above, the etchant supply position Pe is supplied while the etchant is supplied to the etchant supply position Pe. Further, pure water and nitrogen gas are respectively supplied to the pure water supply position Pd and the nitrogen gas supply position Pn set inward in the rotational radius direction of the wafer W. The deionized water supplied to the deionized water supply position Pd flows from the deionized water supply position Pd toward the periphery of the wafer W, and the pure water flow causes the wafer W to move outward in the rotational radius direction from the deionized water supply position Pd. Since the etching solution supplied to the etching solution supply position Pe is pushed away, it is possible to further prevent the etching solution from flowing toward the center of the wafer W. Further, even if the mist of the etching solution is generated when the etching solution enters the etching solution supply position Pe, the mist of the etching solution is blown out of the wafer W by the nitrogen gas. There is no possibility that the thin film in the (device formation region) is corroded by the mist of the etchant.

Furthermore, since pure water is not supplied to the device formation region at the center of the wafer W, there is no possibility that the device built in the device formation region is damaged by the pure water.
FIG. 4 is a diagram schematically showing the configuration of the substrate processing apparatus according to the reference embodiment . In the substrate processing apparatus according to this reference embodiment, the unnecessary metal thin film formed on the peripheral edge and the end surface of the surface of the wafer W is removed from the substrate processing apparatus according to the above-described embodiment, and then the back surface of the wafer W is removed. It is for removing unnecessary metal ions (metal contamination) or metal thin films.

This substrate processing apparatus is provided with a spin chuck 21. The spin chuck 21 includes a chuck shaft 211 arranged substantially vertically, a spin base 212 fixed substantially horizontally to the upper end of the chuck shaft 211, and a plurality of chuck pins 213 erected on the spin base 212. have.
The spin base 212 has, for example, a plurality of spin bases (for example,
6), and a chuck pin 213 is erected at the tip of each arm.
For example, at the tip of every other arm (for example, a total of three arms), a horizontal plane that receives the peripheral edge of the back surface of the wafer W and a vertical that restricts the movement of the wafer W so as to face the end surface of the wafer W. A fixed chuck pin 213 having a surface is fixed. A movable chuck pin 213 that can rotate (rotate) about the vertical axis is attached to the tip of every other remaining arm (for example, a total of three arms). This movable chuck pin 213 rises from the horizontal plane that receives the peripheral edge of the back surface of the wafer W, abuts against the end surface of the wafer W, and holds the wafer W in cooperation with the opposed fixed chuck pins 213. There is also a first vertical surface, and a second vertical surface that rises from the horizontal plane and that can recede outward in the radial direction of the wafer W from the first vertical surface and can regulate the end surface of the wafer W. Therefore, the movable chuck pin 2
13 is rotated around the vertical axis so that the first vertical surface or the second vertical surface is moved to the wafer W.
Thus, the wafer W can be clamped or the wafer W can be clamped.

Further, the chuck shaft 211 includes a rotational drive mechanism 214 including a drive source such as a motor.
Are combined. Accordingly, the wafer W can be rotated in a horizontal plane by rotating the chuck shaft 211 by the rotation driving mechanism 214 in a state where the wafer W is held by the plurality of chuck pins 213.
Further, the chuck shaft 211 is formed in a cylindrical shape, and the back surface rinsing pipe 22 is inserted into the chuck shaft 211 in a non-rotating state. The tip of the back surface rinsing pipe 22 has a chuck shaft 211.
Thus, a back surface rinsing nozzle 221 for supplying an etching solution to the center of the back surface of the wafer W held by the chuck pins 213 at the front end of the chuck shaft 211.
Is formed.

Above the spin chuck 21, a substantially conical blocking plate 23 and a blocking plate cleaning nozzle 24 for discharging pure water for cleaning the inclined surface of the blocking plate 23 are arranged. Barrier plate 2
3 is a configuration in which the opening 122a for supplying the etchant and the etchant supply path 123 are omitted from the blocking plate 12 shown in FIG. 1, and the lower surface 231 of the shield W is held on the spin chuck 21. They are provided so as to face each other substantially in parallel.

In FIG. 4 and FIG. 5 to be described later, portions common to the blocking plate 23 and the blocking plate 12 shown in FIG. Further, the description of the parts denoted by the same reference numerals is omitted.
FIG. 5 is an illustrative view for explaining processing in the substrate processing apparatus according to the reference embodiment. The wafer W to be processed is subjected to a process for removing the metal thin film formed on the peripheral edge portion and the end face of the surface in the substrate processing apparatus shown in FIG. 1 and then carried from the substrate processing apparatus shown in FIG. Then, it is delivered to the spin chuck 21 with the surface facing upward. At this time, the blocking plate 23 (see FIG. 4) is largely retracted upward so as not to hinder the loading of the wafer W. When the wafer W is held on the spin chuck 21, the blocking plate 23 is brought close to the surface of the wafer W, and the spin chuck 21 (that is, the wafer W) starts to rotate at a predetermined rotation speed.

Thereafter, as shown in FIG. 5A, discharge of nitrogen gas is started from the opening 122c, and nitrogen gas is supplied to the nitrogen gas supply position Pn on the surface of the wafer W obliquely from above. In addition, after the start of the discharge of the nitrogen gas, as shown in FIG. 5B, the discharge of pure water is started from the opening 122b, and the pure water supply position Pd on the surface of the wafer W is started obliquely from above. Pure water is supplied. Further, after the discharge of pure water is started, the discharge of the etching solution is started from the back surface rinsing nozzle 221 as shown in FIG. 5C, and the etching solution is supplied to the center of the back surface of the wafer W.

When the supply of nitrogen gas, pure water and etching liquid to the surface of the wafer W is continued for a predetermined time, first, as shown in FIG. 5D, the discharge of the etching liquid from the back surface rinsing nozzle 221 is stopped. The Next, as shown in FIG. 5 (e), the discharge of pure water from the opening 122b is stopped, and thereafter, the discharge of nitrogen gas from the opening 122c is stopped as shown in FIG. 5 (f). This completes the process for removing metal ions or metal thin films from the back surface of the wafer W. After that, pure water is supplied to the back surface of the wafer W, and the etching solution adhering to the back surface of the wafer W is washed away. . The pure water for washing the back surface of the wafer W is configured so that the etching liquid or pure water can be switched and supplied to the back surface rinsing nozzle 221, and supplied from the back surface rinsing nozzle 221 to the back surface of the wafer W. Alternatively, a nozzle provided separately from the back surface rinsing nozzle 221 may be supplied to the back surface of the wafer W. After the washing process, the wafer W is unloaded by a transfer robot (not shown) after the shielding plate 23 is retracted upward.

As described above, the substrate processing apparatus according to the reference embodiment, the etching solution for the removal of metal ions or metal thin film adhering to the back surface of the wafer W is supplied to the center of the back surface of the wafer W being rotated The Thereby, the etching solution can be supplied evenly over the entire back surface of the wafer W, and the metal ions or the metal thin film can be satisfactorily removed from the back surface of the wafer W by this etching solution.

Further, the supply (discharge) of nitrogen gas, pure water and etching liquid is started and stopped in the order described above, so that the surface of the wafer W is pure while the etching liquid is supplied to the back surface of the wafer W. Pure water and nitrogen gas are supplied to the water supply position Pd and the nitrogen gas supply position Pn, respectively. The pure water supplied to the pure water supply position Pd flows from the pure water supply position Pd toward the peripheral edge of the wafer W and flows down from the peripheral edge of the wafer W. Therefore, the pure water supplied to the pure water supply position Pd flows from the back rinse nozzle 221 to the wafer W. There is no possibility that the etching solution supplied to the back surface of the wafer will wrap around the surface of the wafer W.

Further, even if the mist of the etching solution is generated by the chuck pins 213 of the spin chuck 21 crossing the etching solution that is scattered laterally along the back surface of the wafer W, the mist of the etching solution is absorbed by the nitrogen gas by the nitrogen gas. Wafer W is blown away
There is no possibility that the thin film in the central portion (device forming region) of the substrate is corroded by the mist of the etching solution.

Furthermore, since pure water is not supplied to the device formation region at the center of the wafer W, there is no possibility that the device built in the device formation region is damaged by the pure water.
Having described implementation form and reference embodiment of the present invention, it may also be contemplated other forms further. For example, in the first embodiment described above, small circular openings 122a, 122b, and 122c are formed in the lower surface 121 of the blocking plate 12, and etching liquid, pure water, and nitrogen gas are respectively supplied from these openings 122a, 122b, and 122c. Although it is discharged, three concentric annular openings centering on the center CE of the lower surface 121 are formed on the lower surface 121 of the blocking plate 12, and etching liquid, pure water, and nitrogen gas are respectively formed from these three annular openings. May be discharged. Moreover, you may make the same deformation | transformation to the above-mentioned reference form.

In the first embodiment described above, a plurality of openings 122a, 122b, 122c are formed, but at least one of the openings 122a, 122b, 122c may be formed. For example, when only one opening 122a, 122b, and 122c is formed, the openings 122a, 122b, and 122c are formed along a straight line on the lower surface 121 that passes through the center CE of the lower surface 121. Preferred (opening group A surrounded by a two-dot chain line in FIG. 2). According to this, the nitrogen gas supply position Pn, the etchant supply position Pe, and the pure water supply position Pd are provided along a straight line passing through the rotation center of the wafer W.

Alternatively, only one opening 122a from which the etching solution is discharged may be formed, and a plurality of openings 122b and 122c from which pure water and nitrogen gas are discharged may be formed.
In this case, the plurality of openings 122b and 122c includes one opening 122a when viewed from the center CE.
It is preferable to be provided so as to cover. According to this, as viewed from the rotation center of the wafer, the etching solution supply position Pe is covered with the pure water supply position Pd and the nitrogen gas supply position Pn (opening group B surrounded by a two-dot chain line in FIG. 2). .

Furthermore, an opening may be formed near the center of the shielding plate 12, and nitrogen gas may be supplied from this opening.
Furthermore, although nitrogen gas is supplied to the surface of the wafer W from the opening 122c of the blocking plates 12 and 23, an inert gas other than nitrogen gas (for example, helium gas or argon gas)
May be supplied to the surface of the wafer W.

Furthermore, although a semiconductor wafer has been taken up as an example of the substrate, the present invention processes other types of substrates such as glass substrates for liquid crystal display devices, glass substrates for plasma display panels, and glass substrates for photomasks. It can also be applied to an apparatus for applying.
In addition, various design changes can be made within the scope of matters described in the claims.

12 Blocking plate 122 Opening (Discharging means)
122a opening (discharge means)
122b Opening (discharge means)
122c Opening (Discharging means)
23 Barrier plate W Wafer

Claims (13)

A chuck for holding a substrate;
A rotation drive mechanism for rotating the chuck around a rotation axis;
A chemical solution discharging means for discharging a chemical solution for removing unnecessary substances on the substrate toward the chemical solution supply position set in the peripheral region of the substrate held by the chuck;
A pure water discharge means for discharging pure water toward a pure water supply position closer to the rotation axis than the chemical solution supply position in a peripheral region of the substrate held by the chuck;
The chemical solution discharging means and the pure water discharging means are arranged side by side on a straight line extending from the center of the substrate held by the chuck toward the peripheral edge,
The substrate processing apparatus , wherein the pure water discharge means discharges pure water at least while the chemical discharge means discharges the chemical liquid . A chuck for holding a substrate;
A rotation drive mechanism for rotating the chuck around a rotation axis;
A chemical solution discharging means for discharging a chemical solution for removing unnecessary substances on the substrate toward the chemical solution supply position set in the peripheral region of the substrate held by the chuck;
A pure water discharge means for discharging pure water toward a pure water supply position closer to the rotation axis than the chemical solution supply position in a peripheral region of the substrate held by the chuck;
The chemical solution discharge means and the pure water discharge means are arranged side by side along the direction from the periphery of the substrate held by the chuck toward the inside,
The substrate processing apparatus , wherein the pure water discharge means discharges pure water at least while the chemical discharge means discharges the chemical liquid . 3. The substrate processing apparatus according to claim 1, wherein a region where pure water is supplied from the pure water discharge unit on a surface of the substrate is wider than a region where the chemical solution is supplied from the chemical solution discharge unit . The chemical liquid supply position, the pure water discharge is discharged from the means being arranged so as to be located in the region of the pure water flowing on the surface of the substrate, the substrate processing according to claim 1 apparatus. Wherein the chemical dispensing unit, and the pure water discharge means, was directed by inclined in a direction away from the center of the substrate, the substrate processing apparatus according to any one of claims 1-4. The substrate processing apparatus according to claim 1, wherein the pure water discharge unit is controlled to discharge pure water at a timing earlier than the discharge of the chemical solution by the chemical solution discharge unit. A blocking plate for preventing the chemical liquid and pure water supplied to the substrate from the chemical liquid discharge means and the pure water discharge means , respectively ,
The chemical dispensing unit and the pure water discharge means are provided on the shield plate, the substrate processing apparatus according to any one of claims 1-6. And a blocking plate to relatively move between a position away from the position and the top surface of the substrate proximate to the upper surface of the substrate, the substrate processing apparatus according to any one of claims 1-7. The substrate processing apparatus according to claim 8 , wherein an inert gas is discharged between the shielding plate and the substrate. The surface of the substrate, the pure water supply from the position toward the inert gas supply a position closer to the axis of rotation further comprises an inert gas discharging means for supplying an inert gas, any one of claims 1-9 The substrate processing apparatus according to one item. A chemical solution discharging step of discharging a chemical solution for removing unnecessary substances on the substrate from the chemical solution discharge means toward the chemical solution supply position set in the peripheral region of the substrate while rotating the substrate around the rotation axis;
While rotating the substrate around the rotation axis, at least during the period during which the chemical solution is being discharged from the chemical solution discharge means, the peripheral area of the substrate is closer to the pure water supply position than the chemical solution supply position. A pure water discharge step of discharging pure water from the pure water supply discharge means toward the
The pure water discharge means is supplied to the substrate from a pure water area, by supplying the chemical dispensing unit or et drug solution, sweep away away the chemical liquid from the center of the substrate, the substrate processing method. The substrate processing method according to claim 11 , wherein the pure water discharge unit is controlled to discharge pure water at a timing earlier than the discharge of the chemical solution by the chemical solution discharge unit. The surface of the substrate, executed in parallel supplying said pure water discharge step the inert gas toward the inert gas supply a position closer to the axis of rotation than the pure water supply position, according to claim 11 or 12 The substrate processing method as described in 2. above.

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