JP6812262B2 - Substrate processing equipment and substrate processing method - Google Patents

Description

The present invention relates to a semiconductor wafer, a glass substrate for a liquid crystal display device, a glass substrate for a plasma display, a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a photomagnetic disk, a glass substrate for a photomask, a substrate for a solar cell, and the like (hereinafter, It relates to a substrate processing technique for processing a substrate (simply referred to as a "board").

Patent Document 1 discloses a cleaning device for cleaning a substrate. The cleaning device includes a first nozzle and a second nozzle that discharge cleaning liquid from the upper outside of the substrate toward the upper surface of the rotating substrate, respectively. When the first nozzle is viewed from above, a liquid columnar first cleaning liquid is applied so as to hit the liquid landing position on the first nozzle side of the center of the substrate along the diagonally downward discharge direction passing through the center of the substrate. Discharge. Centrifugal force is weak near the center of the substrate. Therefore, the first cleaning liquid flows from the liquid landing position toward the center of the substrate along a straight line on the substrate that overlaps with the discharge direction when the substrate is viewed from above, passes over the center of the substrate, and further. It reaches a position beyond the center of the substrate while maintaining the shape of the liquid column. Since the centrifugal force is strong on the peripheral side of the substrate, the first cleaning liquid beyond the center of the substrate spreads like a liquid film and flows toward the peripheral edge of the substrate while bending to the downstream side in the rotation direction of the substrate.

The liquid columnar second cleaning liquid discharged from the outside of the substrate by the second nozzle passes above the center of the substrate and lands on the substrate at a position where it does not hit the liquid column and the liquid film of the first cleaning liquid. The landing position of the second cleaning liquid is a position downstream of the landing position of the first cleaning liquid in the rotation direction of the substrate, and is farther from the center of the substrate than the liquid landing position of the first cleaning liquid, and a strong centrifugal force is applied. The position of action. After landing, the second cleaning liquid spreads like a liquid film under the influence of centrifugal force and bends toward the peripheral edge of the substrate while bending downstream in the rotational direction of the substrate without hindering the flow of the first cleaning liquid on the substrate. It flows.

According to the above configuration, the cleaning device of Patent Document 1 attempts to clean the central portion of the substrate with the first cleaning liquid and the peripheral portion outside the central portion of the substrate with the second cleaning liquid. Further, the cleaning device also aims to improve the degree of cleaning by preventing the first cleaning liquid and the second cleaning liquid from interfering with each other's flow on the substrate.

JP 2015-201627

In the cleaning apparatus of Patent Document 1, it is necessary that the flow of the first cleaning liquid on the substrate is not obstructed by the second cleaning liquid discharged from the second nozzle. For this purpose, the liquid columnar second cleaning liquid discharged by the second nozzle crosses diagonally downward above the liquid columnar portion of the first treatment liquid flowing on the substrate from the outside above the substrate. It is necessary to reach the liquid landing position on the side opposite to the second nozzle with respect to the center of the substrate. On the other hand, if the landing position of the second cleaning liquid is too far from the center of the substrate, the range that can be cleaned by the second cleaning liquid is narrowed. Therefore, the second cleaning liquid needs to accurately reach the liquid landing position set at a position where the distance from the center of the substrate is one-fourth or less of the radius of the substrate. Further, the first cleaning liquid also needs to be accurately discharged to the landing position further inside the landing position of the second cleaning liquid so as not to collide with the second cleaning liquid. Therefore, it is necessary to strictly set each flow rate (each flow velocity) of the first and second cleaning liquids discharged by the first and second nozzles according to the diameter of each discharge port and the like.

Here, when the surface of the substrate is treated with a chemical solution such as an etching solution, the reactivity of the chemical solution varies depending on the temperature. Therefore, the treatment rate of each part of the substrate surface is the temperature distribution on the surface of the substrate. It fluctuates according to. Therefore, by supplying a chemical solution preheated to a predetermined temperature to the entire area of the substrate, it is possible to process the substrate while controlling the temperature distribution over the entire surface of the substrate so as to have a desired temperature distribution. It is planned.

However, in the cleaning device of Patent Document 1, when the flow velocities of the first and second cleaning liquids deviate even slightly from the desired values, the first cleaning liquid and the second cleaning liquid collide with each other on the substrate, and each cleaning liquid is released. Since the direction of flow changes, the cleaning liquid cannot be supplied onto the center of the substrate. That is, the apparatus of Patent Document 1 has a problem that the chemical solution cannot be supplied to the entire upper surface of the substrate if the flow rate of each chemical solution discharged by the first and second nozzles is not strictly controlled, and the substrate. Problems such as deterioration of the uniformity of the chemical solution supplied to the central region arise.

The present invention has been made to solve such a problem. In a substrate processing apparatus for processing a substrate by discharging a chemical solution onto the surface of a rotating substrate, the chemical solution is supplied to the entire upper surface of the substrate while being supplied to the center of the substrate. It is an object of the present invention to provide a technique capable of improving the uniformity of the film thickness of the chemical solution supplied to the region.

In order to solve the above problems, the substrate processing apparatus according to the first aspect includes a holding member that can rotate while holding the substrate in a substantially horizontal posture, and a rotation mechanism that rotates the holding member about a rotation axis. And the first nozzle that discharges the chemical liquid as a liquid columnar liquid flow from above the substrate so as to hit the first liquid landing position in the intermediate region between the central region and the peripheral region of the rotation locus of the substrate. A second nozzle for discharging the chemical liquid as a liquid columnar liquid flow from above the substrate so as to hit the second liquid landing position in the intermediate region is provided, and the discharge direction when the first nozzle discharges the chemical liquid. Is viewed from above the first nozzle in the direction of the rotation axis of the substrate, and the substrate is along the tangential direction at the first liquidation position of a circle passing through the first liquidation position about the rotation axis. It is a direction having a component toward the upstream side in the rotation direction of the above and a component toward the rotation axis from the first liquid landing position along the radial direction of the substrate orthogonal to the tangent line, and the first nozzle is said. The tangential velocity component of the discharge rate at the time of discharging the chemical solution overcomes the force acting on the chemical solution on the first liquid landing position toward the downstream side in the rotational direction of the substrate due to the rotation of the substrate. The chemical solution has a size that allows the chemical solution to flow upstream in the rotation direction of the substrate, and the radial velocity component of the discharge rate is the rotation of the substrate that acts on the chemical solution on the first liquid landing position. It has a size that allows the chemical solution to flow toward the rotation shaft side by overcoming the centrifugal force caused by the above, and the discharge direction when the second nozzle discharges the chemical solution is from above the second nozzle to the substrate. Seen in the direction of the rotation axis, in a direction having a component toward the downstream side in the rotation direction of the substrate along the tangential direction at the second liquidation position of a circle passing through the second liquidation position about the rotation axis. is there.

The substrate processing apparatus according to the second aspect is the substrate processing apparatus according to the first aspect, wherein the first landing position of the chemical solution discharged by the first nozzle and the discharge by the second nozzle. The second liquid landing position of the chemical solution is the same distance from the rotation axis.

The substrate processing apparatus according to the third aspect is the substrate processing apparatus according to the first aspect, wherein the first liquidation position of the chemical solution discharged by the first nozzle and the first of the peripheral edges of the substrate. When the midpoint of interest is defined by the midpoint of the point closest to the one landing position, the second liquidation position of the chemical solution discharged by the second nozzle is the rotation axis rather than the first liquidation position. Far from, closer to the rotation axis than the midpoint of interest.

The substrate processing apparatus according to the fourth aspect is the substrate processing apparatus according to any one of the first to third aspects, wherein the first liquidation position of the chemical solution discharged by the first nozzle and the first liquidation position and the said The second liquid landing position of the chemical solution discharged by the second nozzle is located on the same straight line forming the diameter of the substrate with the rotation axes sandwiched between the two.

The substrate processing apparatus according to the fifth aspect is the substrate processing apparatus according to any one of the first to fourth aspects, and the second liquidation position of the chemical solution discharged by the second nozzle is the said. The chemical solution discharged by the first nozzle spreads from the first landing position to the periphery and is located on a liquid film formed on the substrate.

The substrate processing apparatus according to the sixth aspect includes a holding member that can rotate while holding the substrate in a substantially horizontal posture, a rotation mechanism that rotates the holding member about a rotation axis, and a rotation locus of the substrate. It corresponds to the first nozzle that discharges the chemical liquid as a liquid columnar liquid flow from above the substrate so as to correspond to the first liquid landing position in the intermediate region between the central region and the peripheral region, and the second liquid landing position in the intermediate region. A second nozzle for discharging the chemical solution as a liquid columnar liquid flow from above the substrate is provided, and the first nozzle is provided from the first liquid landing position immediately after hitting the first liquid landing position. The amount of the chemical solution toward the rotation axis side is larger than the amount of the chemical solution toward the side opposite to the rotation axis from the first landing position immediately after hitting the first landing position. The discharge direction when the chemical solution is discharged and the second nozzle discharges the chemical solution is the second liquid landing centered on the rotation axis when viewed from above the second nozzle in the rotation axis direction of the substrate. It is a direction having a component toward the downstream side in the rotation direction of the substrate along the tangential direction of the circle passing through the position at the second liquid landing position.

The substrate processing apparatus according to the seventh aspect is the substrate processing apparatus according to any one of the first to sixth aspects, and the flow rate of the chemical solution discharged by the second nozzle is discharged by the first nozzle. It is larger than the flow rate of the chemical solution.

The substrate processing apparatus according to the eighth aspect is the substrate processing apparatus according to any one of the first to seventh aspects, and the ejection direction when the second nozzle ejects the chemical solution is the second. Seen from above the nozzle in the direction of the rotation axis of the substrate, the downstream side of the substrate in the rotation direction along the tangential direction at the second liquidation position of a circle passing through the second liquidation position around the rotation axis. It is a direction having a component toward the direction of the second liquid and a component toward the side opposite to the rotation axis from the second liquid landing position along the radial direction of the substrate orthogonal to the tangent line.

The substrate processing apparatus according to the ninth aspect is the substrate processing apparatus according to any one of the first to eighth aspects, and each nozzle of the first nozzle and the second nozzle discharges the chemical solution. Each discharge direction is a direction diagonally downward from the upper side of the substrate when viewed in the radial direction of the substrate from each position on the side opposite to the rotation axis with respect to the nozzles.

The substrate processing method according to the tenth aspect includes a rotation step of rotating the substrate around a rotation axis while holding the substrate in a substantially horizontal posture, and in parallel with the rotation step, a central region and a periphery of the rotation locus of the substrate. In parallel with the rotation step and the first discharge step, the first discharge step of discharging the chemical liquid as a liquid columnar liquid flow from above the substrate so as to hit the first liquid landing position in the intermediate region between the regions. The chemical solution is provided with a second discharge step of discharging the chemical solution as a liquid columnar liquid flow from above the substrate so as to hit the second liquid landing position in the intermediate region, and the chemical solution is discharged in the first discharge step. The discharge direction is such that the chemical solution is viewed from above in the direction of the rotation axis, and the substrate rotates along the tangential direction at the first liquidation position of a circle passing through the first liquidation position around the rotation axis. It is a direction having a component toward the upstream side in the direction and a component toward the rotation axis from the first liquid landing position along the radial direction of the substrate orthogonal to the tangent line, and is discharged in the first discharge step. The velocity component of the discharge rate of the chemical solution in the tangential direction overcomes the force acting on the chemical solution on the first liquid landing position toward the downstream side in the rotational direction of the substrate due to the rotation of the substrate. The radial velocity component of the discharge rate, which has a size capable of flowing upstream in the rotation direction of the substrate, is centrifugal due to the rotation of the substrate acting on the chemical solution on the first liquid landing position. The chemical solution has a size that can overcome the force and flow toward the rotation axis side, and the discharge direction of the chemical solution discharged in the second discharge step is such that the chemical solution is viewed from above in the rotation axis direction. , The chemical liquid is discharged in the discharge direction having a component toward the downstream side in the rotation direction of the substrate along the tangential direction at the second liquid landing position of a circle passing through the second liquid landing position about the rotation axis. It's a step.

The substrate processing method according to the eleventh aspect is the substrate processing method according to the tenth aspect, in which the first liquidation position of the chemical solution discharged in the first discharge step and the second discharge step. The second liquid landing position of the chemical solution to be discharged is the same distance from the rotation axis.

The substrate processing method according to the twelfth aspect is the substrate processing method according to the tenth aspect, which is among the first landing position of the chemical solution discharged in the first discharge step and the peripheral edge of the substrate. When the midpoint of interest is defined by the midpoint with the point closest to the first liquidation position, the second liquidation position of the chemical solution discharged in the second discharge step is from the first liquidation position. Is also far from the rotation axis and closer to the rotation axis than the midpoint of interest.

The substrate processing method according to the thirteenth aspect is the substrate processing method according to any one of the tenth to twelfth aspects, and is the same as the first landing position of the chemical solution discharged in the first discharge step. The second liquid landing position of the chemical solution discharged in the second discharge step is located on the same straight line forming the diameter of the substrate with the rotation axes sandwiched between the two.

The substrate processing method according to the fourteenth aspect is the substrate processing method according to any one of the tenth to thirteenth aspects, and the second liquidation position of the chemical solution discharged in the second discharge step is The chemical solution discharged in the first discharge step spreads from the first landing position to the periphery and is located on the liquid film formed on the substrate.

The substrate processing method according to the fifteenth aspect includes a rotation step of rotating the substrate around a rotation axis while holding the substrate in a substantially horizontal posture, and in parallel with the rotation step, a central region and a periphery of the rotation locus of the substrate. In parallel with the rotation step and the first discharge step, a first discharge step of discharging the chemical liquid as a liquid columnar liquid flow from above the substrate so as to hit the first liquid landing position in the intermediate region between the regions. A second discharge step of discharging the chemical solution as a liquid columnar liquid flow from above the substrate so as to hit the second liquid landing position in the intermediate region is provided, and the first discharge step comprises the first liquid landing. Immediately after hitting the position, the amount of the chemical solution from the first liquid landing position toward the rotating shaft side is on the side opposite to the rotating shaft from the first liquid landing position immediately after hitting the first liquid landing position. It is a step of discharging the chemical solution so as to be larger than the amount of the chemical solution toward, and the discharge direction of the chemical solution discharged in the second discharge step is when the chemical solution is viewed from above in the rotation axis direction. , A direction having a component toward the downstream side in the rotation direction of the substrate along the tangential direction at the second liquidation position of a circle passing through the second liquidation position about the rotation axis.

The substrate processing method according to the sixteenth aspect is the substrate processing method according to any one of the tenth to fifteenth aspects, and the flow rate of the chemical solution discharged in the second discharge step is the flow rate of the first discharge. It is higher than the flow rate of the chemical solution discharged in the step.

The substrate processing method according to the seventeenth aspect is the substrate processing method according to any one of the tenth to sixteenth aspects, and the discharge direction of the chemical solution discharged in the second discharge step is the chemical solution. When viewed from above in the direction of the rotation axis, the component of the circle passing through the second liquidation position about the rotation axis toward the downstream side in the rotation direction of the substrate along the tangential direction at the second liquidation position. , A direction having a component extending from the second liquid landing position to the side opposite to the rotation axis along the radial direction of the substrate orthogonal to the tangent line.

The substrate processing method according to the eighteenth aspect is the substrate processing method according to any one of the tenth to the seventeenth aspects, and the chemical solution in each discharge step of the first discharge step and the second discharge step. The discharge direction at the time of discharging is the upper side of the substrate when the chemicals are viewed in the radial direction of the substrate from the side opposite to the rotation axis with respect to the chemicals discharged in each discharge step. The direction is diagonally downward from.

According to the invention according to the first aspect, at least a part of the chemical solution discharged from the first nozzle is directed to the downstream side in the rotation direction of the substrate acting on the chemical solution immediately after hitting the first liquid landing position. Overcoming both the force and the centrifugal force, it flows from the first liquid landing position to the upstream side in the rotation direction of the substrate and to the rotation axis side while spreading like a liquid film, and then passes through the central region of the substrate. To reach the periphery of the substrate. As a result, a large amount of chemical solution is supplied to the first landing position, and a smaller amount of chemical solution than the first landing position is supplied to each position in the central portion of the substrate. The rotational speed of each part of the substrate in the circumferential direction increases from the rotation axis toward the peripheral edge of the substrate. Further, the chemical solution supplied to each position of the substrate is stretched in the circumferential direction as the rotational speed of each position in the circumferential direction increases, and the film thickness decreases. Therefore, a larger amount of chemical solution is supplied to the first liquidation position than in the central region of the substrate, but the film thickness tends to be thinner than the central region of the substrate, while the first liquidation position is in the central region of the substrate. Although a smaller amount of the chemical solution is supplied, the film thickness is less likely to be thinner than that of the first liquid landing position. Therefore, the uniformity of the film thickness of the chemical solution on the portion of the substrate surface on the center side of the substrate with respect to the first liquid landing position can be improved by the first nozzle. In addition, most of the chemicals discharged from the second nozzle reach the peripheral edge of the substrate while spreading in the form of a liquid film from the second landing position and flowing downstream in the rotational direction of the substrate. Therefore, while supplying the chemical solution to the entire surface of the substrate by the first nozzle and the second nozzle, the portion on the rotation axis side from the first liquid landing position, that is, the central region of the substrate and the first of the intermediate regions of the substrate. The uniformity of the film thickness of the chemical solution supplied to the portion on the rotation shaft side of the liquid landing position can be improved by the first nozzle.

According to the invention according to the second aspect, the first landing position of the chemical solution discharged by the first nozzle and the second landing position of the chemical solution discharged by the second nozzle are the same distance from the rotation axis. Therefore, it becomes easier to supply the chemical solutions discharged from both nozzles to the entire surface of the substrate.

According to the invention according to the fourth aspect, the first landing position of the chemical solution discharged by the first nozzle and the second landing position of the chemical solution discharged by the second nozzle are on the same straight line forming the diameter of the substrate. The rotation axes are sandwiched between each other. Therefore, for example, when the chemicals discharged by both nozzles are parallel to each other and discharged in the same direction when viewed from above the substrate, the discharge direction of the chemicals discharged by the second nozzle is set on the substrate. When viewed from above, the direction may be such that there is no component toward the center side of the substrate. Therefore, the chemical solution can be efficiently supplied from the second nozzle to the peripheral area of the substrate.

According to the invention according to the fifth aspect, the second liquidation position of the chemical liquid discharged by the second nozzle is formed on the substrate by the chemical liquid discharged by the first nozzle spreading from the first liquidation position to the periphery. Located on the liquid film. As a result, the splashing of the chemical solution discharged from the second nozzle is reduced as compared with the case where the second liquid landing position is located on the substrate other than the liquid film formed by the chemical solution discharged from the first nozzle. it can.

According to the invention according to the sixth aspect, the chemical solution discharged from the first nozzle flows from the first landing position toward the center of the substrate while spreading like a liquid film, and further, the first with respect to the center of the substrate. It becomes easy to reach the peripheral edge of the substrate on the side opposite to the liquid landing position. As a result, a large amount of chemical solution is supplied to the first landing position, and a smaller amount of chemical solution than the first landing position is supplied to each position in the central portion of the substrate. The rotational speed of each part of the substrate in the circumferential direction increases from the rotation axis toward the peripheral edge of the substrate. Further, the chemical solution supplied to each position of the substrate is stretched in the circumferential direction as the rotational speed of each position in the circumferential direction increases, and the film thickness decreases. Therefore, a larger amount of chemical solution is supplied to the first liquidation position than in the central region of the substrate, but the film thickness tends to be thinner than the central region of the substrate, while the first liquidation position is in the central region of the substrate. Although a smaller amount of the chemical solution is supplied, the film thickness is less likely to be thinner than that of the first liquid landing position. Therefore, the uniformity of the film thickness of the chemical solution on the portion of the substrate surface on the center side of the substrate with respect to the first liquid landing position can be improved by the first nozzle. Further, a part of the chemical solution discharged from the second nozzle reaches the peripheral edge of the substrate while spreading in a liquid film shape from the second landing position and flowing downstream in the rotation direction of the substrate. Therefore, while supplying the chemical solution to the entire surface of the substrate by the first nozzle and the second nozzle, the portion on the rotation axis side from the first liquid landing position, that is, the central region of the substrate and the first of the intermediate regions of the substrate. The uniformity of the film thickness of the chemical solution supplied to the portion on the rotation shaft side of the liquid landing position can be improved by the first nozzle.

According to the invention according to the seventh aspect, since the flow rate of the chemical solution discharged by the second nozzle is larger than the flow rate of the chemical solution discharged by the first nozzle, the flow rate from the second nozzle is larger than that in the peripheral area of the substrate. Chemical solution can be supplied.

According to the invention according to the eighth aspect, the discharge direction when the second nozzle discharges the chemical liquid is the second liquid landing position centered on the rotation axis when viewed from above the second nozzle in the rotation axis direction of the substrate. The component toward the downstream side of the rotation direction of the substrate along the tangential direction at the second liquidation position of the circle passing through the above, and the axis of rotation from the second liquidation position along the radial direction of the substrate orthogonal to the tangent line. It is a direction having a component toward the side. Therefore, the chemical solution can be efficiently supplied from the second nozzle to the peripheral area of the substrate.

According to the invention according to the ninth aspect, each ejection direction when each nozzle of the first nozzle and the second nozzle ejects the chemical liquid is a substrate from each position on the side opposite to the rotation axis with respect to each nozzle. When viewed in the radial direction of, the direction is diagonally downward from above the substrate. The first nozzle and the second nozzle can more accurately discharge the chemical solution toward the first liquid landing position and the second liquid landing position.

According to the invention according to the tenth aspect, at least a part of the chemical solution discharged in the first discharge step faces the downstream side in the rotation direction of the substrate acting on the chemical solution immediately after hitting the first liquid landing position. Overcomes both the force of the substrate and the centrifugal force, it spreads like a liquid film from the first liquid landing position and flows to the upstream side in the rotation direction of the substrate and to the rotation axis side, and then passes through the central region of the substrate. To reach the periphery of the substrate. As a result, a large amount of chemical solution is supplied to the first landing position, and a smaller amount of chemical solution than the first landing position is supplied to each position in the central portion of the substrate. The rotational speed of each part of the substrate in the circumferential direction increases from the rotation axis toward the peripheral edge of the substrate. Further, the chemical solution supplied to each position of the substrate is stretched in the circumferential direction as the rotational speed of each position in the circumferential direction increases, and the film thickness decreases. Therefore, a larger amount of chemical solution is supplied to the first liquidation position than in the central region of the substrate, but the film thickness tends to be thinner than the central region of the substrate, while the first liquidation position is in the central region of the substrate. Although a smaller amount of the chemical solution is supplied, the film thickness is less likely to be thinner than that of the first liquid landing position. Therefore, the uniformity of the film thickness of the chemical solution on the portion of the substrate surface on the center side of the substrate with respect to the first liquid landing position can be improved by the first discharge step. In addition, most of the chemicals discharged in the second discharge step reach the peripheral edge of the substrate while spreading in the form of a liquid film from the second landing position and flowing downstream in the rotational direction of the substrate. Therefore, while supplying the chemical solution to the entire surface of the substrate by the first discharge step and the second discharge step, the portion on the rotation axis side from the first liquid landing position, that is, the central region of the substrate and the intermediate region of the substrate. The uniformity of the film thickness of the chemical solution supplied to the rotation shaft side portion from the first liquid landing position can be improved by the first discharge step.

According to the invention according to the fifteenth aspect, the chemical solution discharged in the first discharge step flows from the first liquid landing position toward the center of the substrate while spreading like a liquid film, and further with respect to the center of the substrate. 1 It becomes easy to reach the peripheral edge of the substrate on the side opposite to the liquid landing position. As a result, a large amount of chemical solution is supplied to the first landing position, and a smaller amount of chemical solution than the first landing position is supplied to each position in the central portion of the substrate. The rotational speed of each part of the substrate in the circumferential direction increases from the rotation axis toward the peripheral edge of the substrate. Further, the chemical solution supplied to each position of the substrate is stretched in the circumferential direction as the rotational speed of each position in the circumferential direction increases, and the film thickness decreases. Therefore, a larger amount of chemical solution is supplied to the first liquidation position than in the central region of the substrate, but the film thickness tends to be thinner than the central region of the substrate, while the first liquidation position is in the central region of the substrate. Although a smaller amount of the chemical solution is supplied, the film thickness is less likely to be thinner than that of the first liquid landing position. Therefore, the uniformity of the film thickness of the chemical solution on the portion of the substrate surface on the center side of the substrate with respect to the first liquid landing position can be improved by the first discharge step. Further, a part of the chemical solution discharged in the second discharge step reaches the peripheral edge of the substrate while spreading in a liquid film shape from the second liquid landing position and flowing to the downstream side in the rotation direction of the substrate. Therefore, while supplying the chemical solution to the entire surface of the substrate by the first discharge step and the second discharge step, the portion on the rotation axis side from the first liquid landing position, that is, the central region of the substrate and the intermediate region of the substrate. The uniformity of the film thickness of the chemical solution supplied to the rotation shaft side portion from the first liquid landing position can be improved by the first discharge step.

It is a side schematic diagram for demonstrating the structural example of the substrate processing apparatus which concerns on embodiment. It is a top surface schematic diagram for demonstrating the configuration example of the substrate processing apparatus of FIG. It is a figure for demonstrating an example of the intermediate region of the upper surface of a substrate. It is a figure which shows an example of the flow of the chemical liquid discharged on a substrate. It is a figure which shows an example of the relationship between the radius of a substrate and heat loss in a graph format. It is a figure which shows an example of the relationship between the discharge mode of a chemical solution, and the temperature distribution of a substrate in a graph format. It is a top view which shows another example of the arrangement of two nozzles. It is a top view which shows another example of the arrangement of two nozzles. It is a top view which shows another example of the arrangement of two nozzles. It is a figure which shows an example of the film thickness distribution in the radial direction of the substrate of the chemical liquid discharged by two nozzles in a graph format. It is a flowchart which shows an example of the operation of the substrate processing apparatus which concerns on embodiment.

Hereinafter, embodiments will be described with reference to the drawings. The following embodiments are examples that embody the present invention, and are not examples that limit the technical scope of the present invention. Further, in each figure referred to below, the dimensions and numbers of each part may be exaggerated or simplified for easy understanding. The vertical direction is the vertical direction, and the substrate side is above the spin chuck.

<About the embodiment>
<1. Overall configuration of substrate processing device 1>
The configuration of the substrate processing apparatus 1 will be described with reference to FIGS. 1 and 2. 1 and 2 are diagrams for explaining the configuration of the substrate processing apparatus 1 according to the embodiment. 1 and 2 are a schematic side view and a schematic top view of the substrate processing device 1.

In FIGS. 1 and 2, with the nozzles 51 and 52 arranged at the processing positions above the substrate 9, the substrate 9 is rotated around the rotation axis a1 by the spin chuck 21 in a predetermined rotation direction (direction of arrow AR1). The state of doing is shown. The nozzle 51 (52) discharges the liquid columnar chemical liquid L1 (L2) onto the upper surface of the substrate 9. In FIG. 2, the description of some components such as the control unit 130 among the components of the substrate processing device 1 is omitted.

The surface shape of the substrate 9 is substantially circular. The loading / unloading of the substrate 9 into the substrate processing device 1 is performed by a robot or the like with the nozzles 51 and 52 arranged at the shelter position by a nozzle moving mechanism (not shown). The substrate 9 carried into the substrate processing device 1 is detachably held by the spin chuck 21.

The substrate processing device 1 includes a rotation holding mechanism 2, a processing unit 5, and a control unit 130. Each of these units 2 and 5 is electrically connected to the control unit 130 and operates in response to an instruction from the control unit 130. As the control unit 130, for example, the same one as a general computer can be adopted. That is, the control unit 130 stores, for example, a CPU that performs various arithmetic processes, a ROM that is a read-only memory that stores basic programs, a RAM that is a read / write memory that stores various information, control software, data, and the like. It is equipped with a magnetic disk, etc. In the control unit 130, each unit of the board processing device 1 is controlled by the CPU as the main control unit performing arithmetic processing according to the procedure described in the program.

<2. Board 9>
The surface shape of the substrate 9 to be processed by the substrate processing apparatus 1 is substantially circular. The radius of the substrate 9 is, for example, 150 mm. The substrate processing apparatus 1 supplies the processing liquid from the nozzles 51 and 52 to the upper surface of the substrate 9 to process the substrate 9.

FIG. 3 is a diagram for explaining an example of the intermediate region K2 on the upper surface of the substrate 9. The intermediate region K2 is an region between the central region K1 and the peripheral region K3 in the rotation locus of the substrate 9. The length from the center c1 of the substrate 9 to the boundary between the central region K1 and the intermediate region K2 is, for example, one-third of the radius of the substrate 9. Further, the width of the peripheral region K3, that is, the length from the boundary between the intermediate region K2 and the peripheral region K3 to the peripheral edge of the substrate 9, is, for example, one-third of the radius of the substrate 9. Therefore, in this case, the width of the intermediate region K2, that is, the length from the boundary between the central region K1 and the intermediate region K2 to the boundary between the intermediate region K2 and the peripheral region K3 is 3/4 of the radius of the substrate 9. It is 1.

<3. Configuration of each part of the substrate processing device 1>
<Rotation holding mechanism 2>
The rotation holding mechanism 2 is a mechanism capable of rotating the substrate 9 while holding the substrate 9 in a substantially horizontal posture with one main surface facing upward. The rotation holding mechanism 2 rotates the substrate 9 around the vertical rotation axis a1 passing through the center c1 of the main surface. When the nozzles 51 and 52 discharge the chemical solutions L1 and L2, the rotation holding mechanism 2 rotates the substrate 9 at a rotation speed of, for example, 200 rpm to 400 rpm.

The rotation holding mechanism 2 includes a spin chuck (“holding member”, “board holding portion”) 21 which is a disk-shaped member smaller than the substrate 9. The spin chuck 21 is provided so that its upper surface is substantially horizontal and its central axis coincides with the rotation axis a1. A cylindrical rotating shaft portion 22 is connected to the lower surface of the spin chuck 21. The rotating shaft portion 22 is arranged in a posture such that its axis is along the vertical direction. The axis of the rotating shaft portion 22 coincides with the rotating shaft a1. Further, a rotation drive unit (for example, a servomotor) 23 is connected to the rotation shaft unit 22. The rotation drive unit 23 rotationally drives the rotation shaft unit 22 around its axis. Therefore, the spin chuck 21 can rotate about the rotation shaft a1 together with the rotation shaft portion 22. The rotation drive unit 23 and the rotation shaft unit 22 are rotation mechanisms 231 that rotate the spin chuck 21 around the rotation shaft a1. The rotary shaft portion 22 and the rotary drive portion 23 are housed in a cylindrical casing (not shown).

A through hole (not shown) is provided in the central portion of the spin chuck 21 and communicates with the internal space of the rotating shaft portion 22. A pump (not shown) is connected to the internal space via a pipe (not shown) and an on-off valve. The pump and on-off valve are electrically connected to the control unit 130. The control unit 130 controls the operation of the pump and the on-off valve. The pump can selectively supply negative pressure and positive pressure according to the control of the control unit 130. When the pump supplies a negative pressure while the substrate 9 is placed on the upper surface of the spin chuck 21 in a substantially horizontal posture, the spin chuck 21 sucks and holds the substrate 9 from below. When the pump supplies positive pressure, the substrate 9 becomes removable from the upper surface of the spin chuck 21.

In this configuration, when the rotation drive unit 23 rotates the rotation shaft portion 22 while the spin chuck 21 sucks and holds the substrate 9, the spin chuck 21 is rotated around the axis along the vertical direction. As a result, the substrate 9 held on the spin chuck 21 is rotated in the direction of arrow AR1 about the vertical rotation axis a1 passing through the center c1 in the plane thereof. As the spin chuck 21, a plurality of (three or more) chuck pins for gripping the peripheral edge of the substrate 9 are erected from the peripheral edge of a disk-shaped spin base that rotates around the rotation axis a1. May be adopted.

<Processing unit 5>
The processing unit (“chemical solution supply mechanism”) 5 processes the substrate 9 held on the spin chuck 21. Specifically, the processing unit 5 supplies the chemical solution to the upper surface of the substrate 9 held on the spin chuck 21. The processing unit 5 includes nozzles 51 and 52, and a chemical solution supply unit 53.

The nozzles 51 and 52 are attached to, for example, the tip of a long arm provided in a nozzle moving mechanism (not shown). The nozzle moving mechanism is a mechanism for moving the nozzles 51 and 52 between the respective processing positions and the retracted positions.

The processing unit 5 includes a nozzle 51 (52) that discharges the chemical solution L1 (L2) from above the substrate 9 onto the upper surface (surface) of the substrate 9. The nozzle 51 (52) is provided with, for example, a tubular tip-side portion extending toward the upper surface of the substrate 9, and hits the upper surface of the substrate 9 from a discharge port formed at the tip of the tip-side portion. The chemical solution L1 (L2) is discharged as described above.

The nozzle 51 discharges the chemical solution L1 from above the substrate 9 so as to hit the liquid landing position P1 in the intermediate region K2 of the substrate 9. The nozzle 52 discharges the chemical solution L2 from above the substrate 9 so as to hit the liquid landing position P2 in the intermediate region K2. The discharge directions u1 and v1 when the nozzles 51 and 52 discharge the chemical liquids L1 and L2 are viewed in the radial direction of the substrate 9 from the positions on the opposite side of the rotation axis a1 with respect to the nozzles 51 and 52. The direction is diagonally downward from above the substrate 9.

The chemical solution supply unit 53 supplies the chemical solutions L1 and L2 to the nozzles 51 and 52. Specifically, the chemical solution supply unit 53 is configured by combining the chemical solution supply sources 531 and 532, the pipes 541 and 542, and the on-off valves 521 and 522. The chemical solution supply source 531 (532) supplies the chemical solution L1 (L2) to the nozzle 51 (52) via the pipe 541 (542). An on-off valve 521 (522) is provided in the middle of the path of the pipe 541 (542). As the chemical solutions L1 and L2, for example, SPM, SC-1, DHF, SC-2 and the like are used. The chemical solution L1 and the chemical solution L2 are the same type of chemical solution.

When the chemical solution L1 (L2) is supplied to the nozzle 51 (52) from the chemical solution supply source 531 (532), the nozzle 51 (52) discharges the chemical solution L1 (L2) as a liquid columnar liquid stream. However, the on-off valve 521 (522) included in the chemical solution supply unit 53 is opened and closed under the control of the control unit 130 by a valve opening / closing mechanism (not shown) electrically connected to the control unit 130. More specifically, the on-off valve 521 (522) changes its opening degree according to the control of the control unit 130 from the chemical solution supply source 531 (532) to the nozzle 51 (542) via the pipe 541 (542). The flow rate of the chemical solution L1 (l2) supplied to 52) can be changed. The valve opening / closing mechanism can independently change the opening degree of the opening / closing valves 521 and 522 under the control of the control unit 130. As a result, the flow rate of the chemical solution L1 discharged by the nozzle 51 and the flow rate of the chemical solution L2 discharged by the nozzle 52 are controlled independently of each other. That is, the discharge mode of the chemical solution L1 (L2) from the nozzle 51 (52) (specifically, the discharge start timing, discharge end timing, discharge flow rate, etc. of the discharged chemical solution) is controlled by the control unit 130. .. That is, the nozzle 51 (52) of the processing unit 5 discharges the liquid flow of the chemical solution L1 (L2) so as to hit the upper surface of the substrate 9 rotating about the rotation axis a1 under the control of the control unit 130.

Further, as shown in FIG. 2, the discharge direction u1 when the nozzle 51 discharges the chemical solution L1 is a liquid landing position centered on the rotation axis a1 when viewed from above the nozzle 51 in the rotation axis a1 direction of the substrate 9. A component (“directional component”) u2 toward the upstream side in the rotation direction of the substrate 9 along the direction of the tangent line at the liquid landing position P1 of the circle passing through P1 and the liquid landing along the radial direction of the substrate 9 orthogonal to the tangent line. It is a direction having a component (“directional component”) u3 toward the rotation axis a1 from the position P1. The horizontal velocity component of the discharge speed when the nozzle 51 discharges the chemical liquid L1 is the rotational direction of the substrate 9 along the tangential direction at the liquid landing position P1 of a circle passing through the liquid landing position P1 about the rotation axis a1. It is a velocity component obtained by synthesizing the velocity component in the tangential direction toward the upstream side and the velocity component in the radial direction from the liquid landing position P1 toward the rotation axis a1 along the radial direction of the substrate 9 orthogonal to the tangential direction. .. The velocity component of the discharge speed when the nozzle 51 discharges the chemical liquid L1 in the tangential direction is a force acting on the chemical liquid L1 on the liquid landing position P1 toward the downstream side in the rotation direction of the substrate 9 due to the rotation of the substrate 9. It has a size that allows the chemical solution L1 to overcome and flow upstream of the substrate 9 in the rotational direction. The radial velocity component of the discharge velocity has a magnitude that allows the chemical solution L1 to flow toward the rotation axis a1 by overcoming the centrifugal force due to the rotation of the substrate 9 acting on the chemical solution L1 on the liquid landing position P1. .. Therefore, at least a part of the chemical solution L1 discharged from the nozzle 51 overcomes both the force toward the downstream side in the rotational direction and the centrifugal force acting on the chemical solution immediately after hitting the liquid landing position P1. Then, while spreading like a liquid film from the liquid landing position P1, it flows to the upstream side in the rotation direction of the substrate 9 and to the rotation axis a1 side, and then passes through the central region of the substrate and reaches the peripheral edge of the substrate. More specifically, at least a part of the chemical solution L1 is once bent toward the center side of the substrate 9 from the liquid landing position P1 toward the upstream side in the rotation direction of the substrate 9, and then in the rotation direction of the substrate 9. It reaches the center c1 of the substrate 9 while bending downstream and spreading like a liquid film along an arc-shaped path toward the center c1 of the substrate 9. Then, when the chemical solution L1 exceeds the center of the substrate 9, it bends to the downstream side in the rotational direction of the substrate 9 due to the influence of centrifugal force and flows along an arcuate path toward the peripheral edge of the substrate 9 while spreading (). (See FIG. 4).

Therefore, in the nozzle 51 shown in FIG. 2, the amount of the chemical solution L1 from the liquid landing position P1 toward the rotation axis a1 immediately after hitting the liquid landing position P1 hits the liquid landing position P1 immediately after the liquid landing position P1. The chemical solution L1 is discharged so as to be larger than the amount of the chemical solution L1 toward the side opposite to the rotation shaft a1. Further, the chemical solution L1 immediately after being discharged to the liquid landing position P1 has an advantage that the temperature of the chemical solution L1 does not easily drop because the centrifugal force due to the rotation of the substrate 9 does not act strongly.

The discharge direction v1 when the nozzle 52 discharges the chemical solution L2 is a circular liquid landing position P2 that passes through the liquid landing position P2 about the rotation axis a1 when viewed from above the nozzle 52 toward the rotation axis a1 of the substrate 9. It is a direction having a component (“direction component”) v2 toward the downstream side in the rotation direction of the substrate 9 along the tangential direction. Therefore, the chemical solution L2 discharged from the nozzle 52 is strongly affected by the centrifugal force immediately after hitting the liquid landing position P2, and has an arc shape toward the peripheral edge of the substrate 9 while bending toward the downstream side in the rotational direction of the substrate 9. Along the path, it flows while spreading like a liquid film (see FIG. 4).

Therefore, a part of the chemical solution L1 discharged from the nozzle 51 passes through the central portion of the substrate 9 and reaches the peripheral edge of the substrate 9 while spreading like a liquid film from the liquid landing position P1 and is discharged from the nozzle 52. A part of the chemical solution L2 reaches the peripheral edge of the substrate 9 while spreading from the liquid landing position P2 in the form of a liquid film and flowing through the peripheral region K3 of the substrate 9 to the downstream side in the rotation direction of the substrate 9.

In the example of FIG. 2, the virtual circle 201 passes through both the liquid landing positions P1 and P2 with the center c1 (rotation axis a1) of the substrate 9 as the center. That is, the liquid landing position P1 and the liquid landing position P2 are located at the same distance from the rotation axis a1. Further, the chemical solutions L1 and L2 are flowing while spreading like a liquid film. Therefore, the liquid film formed by the chemical solution L1 in the vicinity of the liquid landing position P1 and the liquid film formed by the chemical solution L2 in the vicinity of the liquid landing position P2 spread in substantially the same range in the radial direction of the substrate 9. Therefore, it becomes easier to supply the chemical solutions L1 and L2 discharged from both nozzles to the entire surface of the substrate 9.

FIG. 5 is a graph showing an example of the relationship between the radius of the substrate 9 and the heat loss. In the example shown in FIG. 5, in the substrate 9 having a radius of 150 mm, the heat loss increases from the center c1 of the substrate 9 toward the peripheral edge. In the range within a radius of about 130 mm from the center c1, the rate of increase in heat loss is relatively low, but in the range of a radius of about 130 mm or more, the heat loss increases exponentially toward the periphery. Therefore, in order to make the temperature distribution of the substrate uniform by the chemical solution supplied to the upper surface of the substrate, the amount of the chemical solution supplied to the peripheral portion of the substrate is increased as compared with the chemical solution supplied to the central portion of the substrate. There is a need.

FIG. 6 is a graph showing an example of the relationship between the discharge mode of the chemical solution in the substrate processing apparatus 1 having the configuration shown in FIG. 2 and the temperature distribution of the substrate. The temperature distribution shown by the quadrangle shows the temperature distribution of the substrate 9 when the chemical solution L1 is discharged only from the nozzle (“first nozzle”) 51 of the nozzles 51 and 52. The temperature distribution shown by the black diamonds shows the temperature distribution of the substrate 9 when the chemical solutions L1 and L2 are discharged from both the nozzles 51 and 52. The rotation speed of the substrate 9 is 200 rpm, and the discharge flow rate of the chemical solution L1 in which a part of the substrate 9 flows from the liquid landing position P1 to the center c1 side is 2 L / min. The discharge flow rate of the chemical solution L2 flowing mainly from the liquid landing position P2 to the peripheral edge side of the substrate 9 is 3 L / min. Is. That is, the flow rate of the chemical solution L2 discharged by the nozzle 52 is larger than the flow rate of the chemical solution L1 discharged by the nozzle 51.

Here, the relationship between the discharge flow rate X of the chemical solution L1 and the discharge flow rate Y of the chemical solution L2 is such that the area of the portion of the substrate 9 on the center c1 side of the virtual circle 201 (see FIG. 2) is Acm ² and the peripheral side. Assuming that the area of the portion is B cm ² , it is expressed by Eq. (1). α is a variable whose value fluctuates according to the wind speed when the atmosphere in the chamber (not shown) accommodating the substrate processing device 1 is exhausted from the chamber, the rotation speed of the substrate 9, and the like.

As shown in the graph of FIG. 6, when only the chemical solution L1 is discharged by the nozzle 51, the radial direction of the substrate 9 in the central region K1 and the intermediate region K2 of the substrate 9 to which a large amount of the chemical liquid L1 is supplied. However, in the peripheral region K3, the temperature of the substrate 9 drops sharply toward the peripheral edge of the substrate because the chemical solution L1 to be supplied is insufficient. ing. However, the discharge flow rates of the chemical solutions L1 and L2 are appropriately adjusted according to the rotation speed of the substrate 9, the size of the region where the chemical solutions L1 and L2 are discharged, and the like, and the chemical solutions L1 and L2 are discharged from both the nozzles 51 and 52. By discharging L2, a relatively uniform temperature distribution can be realized over the entire upper surface of the substrate.

As shown in FIG. 2, in the substrate processing apparatus 1, the liquid landing position P2 of the chemical liquid L2 is preferably a liquid in which the chemical liquid L1 spreads from the liquid landing position P1 to the periphery and is formed on the substrate 9. Located on the membrane.

FIG. 10 is a graph showing an example of the film thickness distribution in the radial direction of the substrate 9 of the chemical solutions L1 and L2 discharged by the nozzles 51 and 52. As described above, the chemical solution L1 discharged from the nozzle 51 to the liquid landing position P1 flows from the liquid landing position P1 to the upstream side in the rotation direction of the substrate 9 and to the rotation axis a1 side while spreading like a liquid film, and then flows. , Passes through the central region K1 of the substrate 9 and reaches the peripheral edge of the substrate 9. As a result, a large amount of chemical solution is supplied to the liquid landing position P1, and a small amount of chemical solution L1 is supplied to each position in the central portion of the substrate 9.

The rotational speed of each portion of the substrate 9 in the circumferential direction increases from the rotation axis a1 toward the peripheral edge of the substrate 9. Further, the chemical solutions L1 and L2 supplied to each position of the substrate 9 are stretched in the circumferential direction as the rotation speed of each position in the circumferential direction increases, and the film thickness decreases. The rotational speed of the substrate 9 in the circumferential direction at the liquid landing position P1 is high, and the rotational speed of the substrate 9 in the circumferential direction in the central region K1 is low.

Therefore, a larger amount of the chemical solution L1 than the central region K1 of the substrate 9 is supplied to the liquid landing position P1 from the nozzle 51, but the film thickness tends to be thinner than that of the central region K1. A nozzle 51 is supplied with a smaller amount of the chemical solution L1 than the liquid landing position P1 to the central region K1, but the film thickness is less likely to be thinner than that of the liquid landing position P1. Therefore, as shown in FIG. 10, the uniformity of the film thickness of the chemical solution L1 on the portion of the surface of the substrate 9 on the center side of the substrate 9 with respect to the liquid landing position P1 can be improved by the nozzle 51.

In addition, most of the chemical solution L2 discharged from the nozzle 52 reaches the peripheral edge of the substrate 9 while spreading in a liquid film shape from the liquid landing position P2 and flowing downstream of the substrate 9 in the rotational direction. Therefore, while the chemical solutions L1 and L2 are supplied to the entire upper surface of the substrate 9 by the nozzle 51 and the nozzle 52, the portion on the rotation axis a1 side of the liquid landing position P1, that is, the central region K1 of the substrate 9 and the middle of the substrate 9. The uniformity of the film thickness of the chemical solution L1 supplied to the portion of the region K2 on the rotation shaft a1 side of the liquid landing position P1 can be improved by the first nozzle. Further, the heat loss of the substrate 9 rapidly increases from the center side to the peripheral side of the substrate 9 due to the rotation of the substrate 9, but the chemical solution L2 discharged from the second nozzle is mainly in the peripheral region K3 of the substrate 9. The chemical solutions L1 and L2 supplied in the peripheral region K3 of the substrate 9 can be increased as compared with the chemical solutions L1 supplied to the central portion of the substrate 9. Therefore, the uniformity of the temperature distribution on the surface of the substrate 9 can be improved.

<4. Example of arrangement of nozzles 51 and 52>
7 to 9 are diagrams showing examples of other arrangement relationships of the nozzles 51 and 52 of the substrate processing device 1 that are different from the arrangement relationships shown in FIG. 2, respectively. In FIGS. 7 to 9, the nozzle 51 discharges the chemical solution L1 from the same position as the nozzle 51 shown in FIG. 2 to the liquid landing position P1 in the same discharge mode.

In the arrangement relationship shown in FIG. 7, the liquid landing position P2 of the chemical liquid L2 is farther from the rotation axis a1 than the liquid landing position P1 of the chemical liquid L1, and the liquid landing position P1 and the peripheral edge of the substrate 9 are landed. It is closer to the rotation axis a1 than the midpoint (“midpoint of interest”) with the point closest to the position P1. The virtual circle 202 passes through the midpoint centered on the center c1, and the virtual circle 201 passes through the liquid landing position P1 centered on the center c1. In this case, there is a gap between the liquid landing position P1 and the liquid landing position P2 in the radial direction of the substrate 9, but the chemical solution L1 (L2) is moved from the liquid landing position P1 (P2) to the periphery. It flows while spreading. Therefore, in the radial direction of the substrate 9, it is possible to prevent a gap from being formed between the liquid film formed by the chemical solution L1 in the vicinity of the liquid landing position P1 and the liquid film formed by the chemical liquid L2 in the vicinity of the liquid landing position P2. Will be done.

In the arrangement relationship shown in FIG. 8, the liquid landing position P1 of the chemical liquid L1 discharged by the nozzle 51 and the liquid landing position P2 of the chemical liquid L2 discharged by the nozzle 52 are on the same straight line forming the diameter of the substrate 9. The rotation axes a1 are sandwiched between each other and are located.

In the arrangement relationship shown in FIG. 9, the discharge direction v1 when the nozzle 52 discharges the chemical solution L2 is a liquid landing position centered on the rotation axis a1 when viewed from above the nozzle 52 in the rotation axis a1 direction of the substrate 9. A component v2 toward the downstream side in the rotation direction of the substrate 9 along the direction of the tangent line at the liquid landing position P2 of a circle passing through P2, and a rotation axis from the liquid landing position P2 along the radial direction of the substrate 9 orthogonal to the tangent line. It is a direction having a component (“directional component”) v3 toward the opposite side of a1. Therefore, the angle formed by the tangent line and the discharge direction v1 is an acute angle. Therefore, the chemical solution L2 can be efficiently supplied from the nozzle 52 to the peripheral region K3 of the substrate 9.

<5. Operation of board processing equipment>
FIG. 11 is a flowchart showing an example of the operation of the substrate processing device 1. The substrate processing device 1 processes the substrate 9 with the chemical solutions L1 and L2 according to this flowchart. Prior to the start of the operation according to this flowchart, the substrate 9 is held in advance by the spin chuck 21.

First, the rotation mechanism 231 starts the rotation of the spin chuck 21 under the control of the control unit 130 to start the rotation of the substrate 9 held by the spin chuck 21 (step S10 in FIG. 11).

Next, the valve opening / closing mechanism of the processing unit 5 opens the on / off valve 521 at a predetermined opening degree under the control of the control unit 130, so that the nozzle 51 is settled in the intermediate region K2 of the rotation locus of the substrate 9. Discharge of the chemical solution L1 is started so as to hit the position P1 (step S20), and the valve opening / closing mechanism opens the on / off valve 522 at a predetermined opening degree under the control of the control unit 130, so that the nozzle 52 has an intermediate region K2. The discharge of the chemical solution L2 is started so as to hit the liquid landing position P2 in (step S30).

The discharge direction of the chemical liquid L1 discharged in step S20 is along the tangential direction at the liquid landing position P1 of a circle passing through the liquid landing position P1 centering on the rotation axis a1 when the chemical liquid L1 is viewed from above in the rotation axis a1 direction. It is a direction having a component toward the upstream side in the rotation direction of the substrate 9 and a component toward the rotation axis a1 from the liquid landing position P1 along the radial direction of the substrate 9 orthogonal to the tangent line.

The velocity component of the discharge speed of the chemical liquid L1 discharged by the nozzle 51 in step S20 in the tangential direction overcomes the force downstream of the rotation direction of the substrate 9 acting on the chemical liquid on the liquid landing position P1 due to the rotation of the substrate 9. The chemical solution has a size capable of flowing upstream of the substrate 9 in the rotational direction. The radial velocity component of the discharge rate of the chemical solution L1 has a size that allows the chemical solution L1 to flow toward the rotation axis a1 by overcoming the centrifugal force due to the rotation of the substrate 9 acting on the chemical solution L1 on the landing position P1. Have. In step S20, the nozzle 51 preferably hits the liquid landing position P1 and immediately after the amount of the chemical solution L1 from the liquid landing position P1 toward the rotation axis a1 side hits the liquid landing position P1. The chemical solution L1 is discharged so as to be larger than the amount of the chemical solution L1 toward the side opposite to the rotation shaft a1. The discharge direction of the chemical liquid L2 discharged by the nozzle 52 in step S30 is the tangential direction at the liquid landing position P2 of a circle passing through the liquid landing position P2 about the rotation axis a1 when the chemical liquid L2 is viewed from above in the direction of the rotation axis a1. It is a discharge direction having a component toward the downstream side in the rotation direction of the substrate 9 along the above.

The control unit 130 waits for the time required for processing by the chemical solutions L1 and L2 to elapse, causes the valve opening / closing mechanism of the processing unit 5 to close the on-off valves 521 and 522, and causes the chemical solutions L1 and L2 by the nozzles 51 and 52 to close. Discharge is stopped (step S40), and then the rotation mechanism 231 stops the rotation of the spin chuck 21 to stop the rotation of the substrate 9 (step S50). The processing operation of the substrate processing apparatus 1 shown in FIG. 11 is completed.

According to the substrate processing apparatus according to the present embodiment configured as described above, the ejection direction u1 when the nozzle 51 ejects the chemical solution L1 is viewed from above the nozzle 51 in the direction of the rotation axis a1 of the substrate 9. In the radial direction of the substrate 9 orthogonal to the tangent line with the component u2 toward the upstream side of the rotation direction of the substrate 9 along the direction of the tangent line at the liquid landing position P1 of the circle passing through the liquid landing position P1 about the rotation axis a1. Along the direction, the component u3 is provided from the liquid landing position P1 toward the rotation axis a1. The tangential velocity component of the discharge speed when the nozzle 51 discharges the chemical solution L1 overcomes the force downstream of the rotation direction of the substrate 9 acting on the chemical solution L1 on the liquid landing position P1 due to the rotation of the substrate 9. The chemical solution L1 has a size that allows it to flow upstream of the substrate 9 in the rotational direction. The radial velocity component of the discharge velocity has a magnitude that allows the chemical solution L1 to flow toward the rotation axis a1 by overcoming the centrifugal force due to the rotation of the substrate 9 acting on the chemical solution L1 on the liquid landing position P1. .. Therefore, at least a part of the chemical solution L1 discharged from the first nozzle overcomes the force toward the downstream side in the rotational direction of the substrate 9 acting on the chemical solution L1 immediately after hitting the liquid landing position P1 to land the liquid. From the position P1, while temporarily bending toward the center side of the substrate 9, heading toward the upstream side in the rotation direction of the substrate 9, then bending toward the downstream side in the rotation direction of the substrate 9 and forming an arc-shaped path toward the center c1 of the substrate 9. Along the same, it reaches the center c1 of the substrate 9 while spreading like a liquid film. Then, when the chemical solution L1 exceeds the center of the substrate 9, it flows while bending along the arcuate path toward the peripheral edge of the substrate 9 while bending to the downstream side in the rotational direction of the substrate 9 due to the influence of centrifugal force. The discharge direction v1 when the nozzle 52 discharges the chemical solution L2 is a circular liquid landing position P2 that passes through the liquid landing position P2 about the rotation axis a1 when viewed from above the nozzle 52 in the direction of the rotation axis a1 of the substrate 9. It is a direction having a component v2 toward the downstream side in the rotation direction of the substrate 9 along the tangential direction. Therefore, the chemical solution L2 is strongly affected by the centrifugal force immediately after hitting the liquid landing position P2, and the liquid is bent along the arcuate path toward the peripheral edge of the substrate 9 while bending downstream in the rotational direction of the substrate 9. It flows while spreading like a film. Therefore, a part of the chemical solution L1 discharged from the nozzle 51 passes through the central portion of the substrate 9 and reaches the peripheral edge of the substrate 9 while spreading like a liquid film from the liquid landing position P1 and is discharged from the nozzle 52. A part of the chemical solution L2 reaches the peripheral edge of the substrate 9 while spreading from the liquid landing position P2 in the form of a liquid film and flowing through the peripheral region K3 of the substrate 9 to the downstream side in the rotation direction of the substrate 9. Therefore, the chemical solutions L1 and L2 discharged from the nozzles 51 and 52 are supplied to the entire surface of the substrate 9 as a whole. Further, the heat loss of the substrate 9 sharply increases from the center side to the peripheral side of the substrate 9 due to the rotation of the substrate 9, but the chemical solution L2 discharged from the second nozzle is mainly in the peripheral region K3 of the substrate 9. The amount of the chemical solutions L1 and L2 supplied to the peripheral region K3 of the substrate 9 can be increased.

Further, according to the substrate processing apparatus according to the present embodiment, the liquid landing position P1 of the chemical liquid L1 discharged by the nozzle 51 and the liquid landing position P2 of the chemical liquid L2 discharged by the nozzle 52 are at the same distance from the rotation axis a1. is there. Therefore, it becomes easier to supply the chemical solutions L1 and L2 discharged from both nozzles to the entire surface of the substrate 9.

Further, according to the substrate processing apparatus according to the present embodiment, the liquid landing position P1 of the chemical liquid L1 discharged by the nozzle 51 and the liquid landing position P2 of the chemical liquid L2 discharged by the nozzle 52 form the diameter of the substrate 9. The rotation axes a1 are located on a straight line with the rotation axes a1 sandwiched between them. Therefore, for example, when the chemicals L1 and L2 discharged by both nozzles are parallel to each other and are discharged in the same direction when viewed from above the substrate 9, the discharge direction of the chemicals L2 discharged by the nozzle 52 is v1 can be in a direction having no component toward the center side of the substrate 9 when viewed from above the substrate 9. Therefore, the chemical solution L2 can be efficiently supplied from the nozzle 52 to the peripheral region K3 of the substrate 9.

Further, according to the substrate processing apparatus according to the present embodiment, the liquid landing position P2 of the chemical liquid L2 discharged by the nozzle 52 is formed on the substrate 9 by the chemical liquid L1 discharged by the nozzle 51 spreading from the liquid landing position P1 to the periphery. It is located on the liquid film. As a result, the liquid splash of the chemical liquid L2 discharged from the nozzle 52 is reduced as compared with the case where the liquid landing position P2 is located on the substrate 9 at a portion other than the liquid film formed by the chemical liquid L1 discharged from the nozzle 51. it can.

Further, according to the substrate processing apparatus according to the present embodiment, the amount of the chemical solution L1 from the liquid landing position P1 toward the rotation axis a1 side hits the liquid landing position P1 immediately after the nozzle 51 hits the liquid landing position P1. Immediately after, the chemical solution L1 is discharged so as to be larger than the amount of the chemical solution L1 from the liquid landing position P1 toward the side opposite to the rotation axis a1, and the discharge direction v1 when the nozzle 52 discharges the chemical solution L2 is the nozzle. Seen from above 52 in the direction of the rotation axis a1 of the substrate 9, it goes toward the downstream side in the rotation direction of the substrate 9 along the tangential direction at the liquid landing position P2 of a circle passing through the liquid landing position P2 about the rotation axis a1. It is a direction having the component v2. Therefore, the chemical solution L1 discharged from the nozzle 51 flows from the liquid landing position P1 toward the center of the substrate 9 while spreading like a liquid film, and further, the substrate on the side opposite to the liquid landing position P1 with respect to the center of the substrate 9. It becomes easy to reach the peripheral edge of 9. As a result, a large amount of chemical solution is supplied to the first landing position, and a smaller amount of chemical solution than the first landing position is supplied to each position in the central portion of the substrate. The rotational speed of each part of the substrate in the circumferential direction increases from the rotation axis toward the peripheral edge of the substrate. Further, the chemical solution supplied to each position of the substrate is stretched in the circumferential direction as the rotational speed of each position in the circumferential direction increases, and the film thickness decreases. Therefore, a larger amount of chemical solution is supplied to the first liquidation position than in the central region of the substrate, but the film thickness tends to be thinner than the central region of the substrate, while the first liquidation position is in the central region of the substrate. Although a smaller amount of the chemical solution is supplied, the film thickness is less likely to be thinner than that of the first liquid landing position. Therefore, the uniformity of the film thickness of the chemical solution on the portion of the substrate surface on the center side of the substrate with respect to the first liquid landing position can be improved by the first nozzle. Further, a part of the chemical solution L2 discharged from the nozzle 52 reaches the peripheral edge of the substrate 9 while flowing from the liquid landing position P2 in the form of a liquid film and flowing through the peripheral region K3 of the substrate 9 to the downstream side in the rotational direction of the substrate 9. To do. Therefore, while supplying the chemical solution to the entire surface of the substrate by the first nozzle and the second nozzle, the portion on the rotation axis side from the first liquid landing position, that is, the central region of the substrate and the first of the intermediate regions of the substrate. The uniformity of the film thickness of the chemical solution supplied to the portion on the rotation shaft side of the liquid landing position can be improved by the first nozzle. Further, the heat loss of the substrate 9 rapidly increases from the center side to the peripheral side of the substrate 9 due to the rotation of the substrate 9, but the chemical solution L2 discharged from the second nozzle is mainly in the peripheral region K3 of the substrate 9. The chemical solutions L1 and L2 supplied in the peripheral region K3 of the substrate 9 can be increased as compared with the chemical solutions L1 supplied to the central portion of the substrate 9. Therefore, the uniformity of the temperature distribution on the surface of the substrate 9 can be improved.

Further, according to the substrate processing apparatus according to the present embodiment, since the flow rate of the chemical solution L2 discharged by the nozzle 52 is larger than the flow rate of the chemical solution L1 discharged by the nozzle 51, the nozzle is relative to the peripheral region K3 of the substrate 9. More chemicals L2 can be supplied from 52.

Further, according to the substrate processing apparatus according to the present embodiment, the ejection direction v1 when the nozzle 52 ejects the chemical solution L2 is centered on the rotation axis a1 when viewed from above the nozzle 52 in the rotation axis a1 direction of the substrate 9. As a component v2 toward the downstream side in the rotational direction of the substrate 9 along the direction of the tangent line at the liquid landing position P2 of the circle passing through the liquid landing position P2, and the liquid landing position P2 along the radial direction of the substrate 9 orthogonal to the tangent line. It is a direction having a component v3 toward the side opposite to the rotation axis a1. Therefore, the chemical solution L2 can be efficiently supplied from the nozzle 52 to the peripheral region K3 of the substrate 9.

Further, according to the substrate processing apparatus according to the present embodiment, the discharge directions u1 and u2 when the nozzles 51 and 52 discharge the chemical liquids L1 and L2 are on the opposite sides of the rotation shaft a1 with respect to the nozzles 51 and 52. When viewed in the radial direction of the substrate 9 from each position of the above, the direction is diagonally downward from the upper side of the substrate 9. The nozzles 51 and 52 can more accurately discharge the chemical solutions L1 and L2 toward the liquid landing positions P1 and P2.

Further, according to the substrate processing method according to the present embodiment as described above, at least a part of the chemical solution L1 is on the downstream side in the rotation direction of the substrate 9 acting on the chemical solution L1 immediately after hitting the liquid landing position P1. It overcomes both the directional force and the centrifugal force, and flows from the liquid landing position P1 to the upstream side in the rotation direction of the substrate 9 and to the rotation axis a1 side while spreading like a liquid film, and then flows to the center of the substrate 9. It passes through the region and reaches the peripheral edge of the substrate 9. As a result, a large amount of the chemical solution L1 is supplied to the liquid landing position P1, and a small amount of the chemical solution L1 is supplied to each position of the central portion of the substrate 9 than the liquid landing position P1. A larger amount of chemical solution L1 is supplied to the liquid landing position P1 than in the central region of the substrate 9, but the film thickness tends to be thinner than the central region of the substrate 9, while the liquid landing position P1 is in the central region of the substrate 9. Although a smaller amount of the chemical solution L1 is supplied, the film thickness is less likely to be thinner than that of the liquid landing position P1. Therefore, the uniformity of the film thickness of the chemical solution on the portion of the surface of the substrate 9 on the center c1 side of the substrate 9 with respect to the liquid landing position P1 can be improved by discharging the chemical solution L1 to the liquid landing position P1. In addition, most of the chemical solution L2 discharged to the liquid landing position P2 reaches the peripheral edge of the substrate 9 while spreading in a liquid film shape from the liquid landing position P2 and flowing downstream of the substrate 9 in the rotational direction. To do. Therefore, while supplying the chemical solutions L1 and L2 to the entire surface of the substrate 9, the portion on the rotation axis a1 side of the liquid landing position P1, that is, the central region of the substrate 9 and the intermediate region of the substrate 9 from the liquid landing position P1. It is also possible to improve the uniformity of the film thickness of the chemical solution L1 supplied to the portion on the rotating shaft a1 side.

Although the present invention has been shown and described in detail, the above description is exemplary and not limiting in all embodiments. Therefore, in the present invention, the embodiments can be appropriately modified or omitted within the scope of the invention.

1 Substrate processing device 9 Substrate 21 Spin chuck 231 Rotation mechanism K1 Central area K2 Intermediate area K3 Peripheral area P1 Liquid landing position (first liquid landing position)
P2 landing position (second liquid landing position)
L1, L2 chemical solution 51 nozzles (1st nozzle)
52 nozzles (second nozzle)
u1, v1 Discharge direction u2, u3, v2, v3 Component a1 Rotation axis c1 Center

Claims (18)

A holding member that can rotate while holding the board in a substantially horizontal position,
A rotation mechanism that rotates the holding member around a rotation axis,
A first nozzle that discharges a chemical solution as a liquid columnar liquid flow from above the substrate so as to hit the first liquid landing position in the intermediate region between the central region and the peripheral region of the rotation locus of the substrate.
A second nozzle that discharges the chemical solution as a liquid columnar liquid flow from above the substrate so as to hit the second liquid landing position in the intermediate region, and
With
The discharge direction when the first nozzle discharges the chemical solution is a circle that passes through the first liquid landing position with the rotation axis as the center when viewed from above the first nozzle in the rotation axis direction of the substrate. A component toward the upstream side in the rotation direction of the substrate along the tangential direction at the first liquid landing position and a component from the first liquid landing position toward the rotation axis along the radial direction of the substrate orthogonal to the tangent line. It is the direction to have the ingredients
The tangential velocity component of the discharge speed when the first nozzle discharges the chemical solution is directed to the downstream side in the rotation direction of the substrate that acts on the chemical solution on the first liquid landing position by the rotation of the substrate. Has a size that allows the chemical solution to flow upstream in the rotational direction of the substrate by overcoming the force of
The radial velocity component of the discharge speed has a magnitude that allows the chemical solution to flow toward the rotation shaft side by overcoming the centrifugal force due to the rotation of the substrate acting on the chemical solution on the first liquid landing position. Have and
The discharge direction when the second nozzle discharges the chemical solution is a circle that passes through the second liquid landing position with the rotation axis as the center when viewed from above the second nozzle in the rotation axis direction of the substrate. A substrate processing apparatus having a component toward the downstream side in the rotational direction of the substrate along the tangential direction at the second liquid landing position. The substrate processing apparatus according to claim 1.
A substrate processing apparatus in which the first landing position of the chemical solution discharged by the first nozzle and the second landing position of the chemical solution discharged by the second nozzle are the same distance from the rotation axis. The substrate processing apparatus according to claim 1.
When the midpoint of interest is defined by the midpoint between the first landing position of the chemical solution discharged by the first nozzle and the point closest to the first landing position on the periphery of the substrate.
A substrate processing apparatus in which the second landing position of the chemical solution discharged by the second nozzle is farther from the rotation axis than the first liquid landing position and closer to the rotation axis than the midpoint of interest. The substrate processing apparatus according to any one of claims 1 to 3.
The first liquidation position of the chemical solution discharged by the first nozzle and the second liquidation position of the chemical solution discharged by the second nozzle are rotated on the same straight line forming the diameter of the substrate. A substrate processing device that is located with the shafts sandwiched between them. The substrate processing apparatus according to any one of claims 1 to 4.
The second liquidation position of the chemical solution discharged by the second nozzle is the liquid film formed on the substrate by the chemical solution discharged by the first nozzle spreading from the first liquidation position to the periphery. Board processing equipment located above. A holding member that can rotate while holding the board in a substantially horizontal position,
A rotation mechanism that rotates the holding member around a rotation axis,
A first nozzle that discharges a chemical solution as a liquid columnar liquid flow from above the substrate so as to hit the first liquid landing position in the intermediate region between the central region and the peripheral region of the rotation locus of the substrate.
A second nozzle that discharges the chemical solution as a liquid columnar liquid flow from above the substrate so as to hit the second liquid landing position in the intermediate region, and
With
Immediately after the first nozzle hits the first liquid landing position, the amount of the chemical solution from the first liquid landing position toward the rotation axis side hits the first liquid landing position. The chemical solution is discharged so as to be larger than the amount of the chemical solution toward the side opposite to the rotation axis from the liquid landing position.
The discharge direction when the second nozzle discharges the chemical solution is a circle that passes through the second liquid landing position with the rotation axis as the center when viewed from above the second nozzle in the rotation axis direction of the substrate. A substrate processing apparatus having a component toward the downstream side in the rotational direction of the substrate along the tangential direction at the second liquid landing position. The substrate processing apparatus according to any one of claims 1 to 6.
A substrate processing apparatus in which the flow rate of the chemical solution discharged by the second nozzle is larger than the flow rate of the chemical solution discharged by the first nozzle. The substrate processing apparatus according to any one of claims 1 to 7.
The discharge direction when the second nozzle discharges the chemical solution is a circle that passes through the second liquid landing position with the rotation axis as the center when viewed from above the second nozzle in the rotation axis direction of the substrate. The component toward the downstream side in the rotation direction of the substrate along the tangential direction at the second liquid landing position and the rotation axis opposite to the rotation axis from the second liquid landing position along the radial direction of the substrate orthogonal to the tangent line. A substrate processing device that is in the direction of having components towards the side. The substrate processing apparatus according to any one of claims 1 to 8.
Each discharge direction when each nozzle of the first nozzle and the second nozzle discharges the chemical solution is viewed in the radial direction of the substrate from each position on the side opposite to the rotation axis with respect to each nozzle. The substrate processing apparatus is in a direction diagonally downward from above the substrate. A rotation step that rotates the board around the rotation axis while holding the board in a substantially horizontal position,
In parallel with the rotation step, the chemical solution is discharged as a liquid columnar liquid flow from above the substrate so as to hit the first liquid landing position in the intermediate region between the central region and the peripheral region of the rotation locus of the substrate. The first discharge step to be performed and
In parallel with the rotation step and the first discharge step, a second discharge step of discharging the chemical solution as a liquid columnar liquid flow from above the substrate so as to hit the second liquid landing position in the intermediate region.
With
The discharge direction of the chemical solution discharged in the first discharge step is the first landing of a circle that passes through the first landing position about the rotation axis when the chemical solution is viewed from above in the direction of the rotation axis. A direction having a component toward the upstream side in the rotation direction of the substrate along the tangential direction at the position and a component toward the rotation axis from the first liquid landing position along the radial direction of the substrate orthogonal to the tangent line. And
The tangential velocity component of the discharge rate of the chemical solution discharged in the first discharge step is directed to the downstream side in the rotation direction of the substrate that acts on the chemical solution on the first liquid landing position by the rotation of the substrate. It has a size that allows the chemical solution to flow upstream in the rotational direction of the substrate by overcoming the force of
The radial velocity component of the discharge speed has a magnitude that allows the chemical solution to flow toward the rotation shaft side by overcoming the centrifugal force due to the rotation of the substrate acting on the chemical solution on the first liquid landing position. Have and
The discharge direction of the chemical solution discharged in the second discharge step is such that the chemical solution is viewed from above in the direction of the rotation axis, and the second liquid is formed in a circle that passes through the second landing position about the rotation axis. A substrate processing method, which is a step of discharging the chemical solution in a discharge direction having a component toward the downstream side in the rotation direction of the substrate along the tangential direction at the position. The substrate processing method according to claim 10.
The first liquidation position of the chemical solution discharged in the first discharge step and the second liquidation position of the chemical solution discharged in the second discharge step are the same distance from the rotation axis. Substrate processing method. The substrate processing method according to claim 10.
When the midpoint of interest is defined by the midpoint between the first landing position of the chemical solution discharged in the first discharge step and the point closest to the first landing position on the periphery of the substrate.
A substrate processing method in which the second landing position of the chemical solution discharged in the second discharge step is farther from the rotation axis than the first liquid landing position and closer to the rotation axis than the midpoint of interest. The substrate processing method according to any one of claims 10 to 12.
The first landing position of the chemical solution discharged in the first discharge step and the second landing position of the chemical solution discharged in the second discharge step are on the same straight line forming the diameter of the substrate. In addition, a substrate processing method in which the rotating shafts are sandwiched between each other and located. The substrate processing method according to any one of claims 10 to 13.
The second liquidation position of the chemical solution discharged in the second discharge step is formed on the substrate by spreading the chemical solution discharged in the first discharge step to the periphery from the first liquidation position. Substrate processing method located on the liquid film. A rotation step that rotates the board around the rotation axis while holding the board in a substantially horizontal position,
In parallel with the rotation step, the chemical solution is discharged as a liquid columnar liquid flow from above the substrate so as to hit the first liquid landing position in the intermediate region between the central region and the peripheral region of the rotation locus of the substrate. The first discharge step and
In parallel with the rotation step and the first discharge step, a second discharge step of discharging the chemical solution as a liquid columnar liquid flow from above the substrate so as to hit the second liquid landing position in the intermediate region.
With
In the first discharge step, immediately after the first liquid landing position is hit, the amount of the chemical solution from the first liquid landing position toward the rotation axis side hits the first liquid landing position. It is a step of discharging the chemical solution so as to be larger than the amount of the chemical solution from the liquid landing position toward the side opposite to the rotation axis.
The discharge direction of the chemical solution discharged in the second discharge step is such that the chemical solution is viewed from above in the direction of the rotation axis, and the second liquid is formed in a circle that passes through the second landing position about the rotation axis. A substrate processing method, which is a direction having a component toward the downstream side in the rotation direction of the substrate along a tangential direction at a position. The substrate processing method according to any one of claims 10 to 15.
A substrate processing method in which the flow rate of the chemical solution discharged in the second discharge step is larger than the flow rate of the chemical solution discharged in the first discharge step. The substrate processing method according to any one of claims 10 to 16.
The discharge direction of the chemical solution discharged in the second discharge step is such that the chemical solution is viewed from above in the direction of the rotation axis, and the second liquid is formed in a circle passing through the second landing position about the rotation axis. A component that goes downstream in the rotation direction of the substrate along the tangential direction at the position and a component that goes from the second liquid landing position to the side opposite to the rotation axis along the radial direction of the substrate that is orthogonal to the tangent line. A substrate processing method in the direction of having and. The substrate processing method according to any one of claims 10 to 17.
Each discharge direction when the chemical liquid is discharged in each discharge step of the first discharge step and the second discharge step is opposite to the rotation axis with respect to each chemical liquid discharged in each discharge step. A substrate processing method in which each chemical solution is viewed from the side in the radial direction of the substrate, and the direction is diagonally downward from above the substrate.

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