JP2012174933A - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which suppresses diffusion of processing liquid over a substrate when a foreign matter on the substrate such as a semiconductor wafer is cleaned with the processing liquid discharged from a processing fluid nozzle, and allows the foreign matter after being separated from the substrate to be effectively removed beyond the substrate.SOLUTION: A substrate processing apparatus includes a diffusion suppression section which is disposed to surround the periphery of a processing fluid nozzle, and is formed in a shape having an opening in one direction, and is configured to release gas with respect to a substrate; and a movement section for moving the diffusion suppression section. When the processing liquid is discharged from the processing fluid nozzle, the movement section moves the diffusion suppression section so that the opening of the diffusion suppression section is oriented to a peripheral edge of the substrate. This suppresses damage on the substrate due to the diffusion of the processing liquid, thereby allowing the processing liquid and the foreign matter to be effectively removed beyond the substrate.

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method used in an electronic component manufacturing process, and more specifically, a semiconductor wafer, a glass substrate for a liquid crystal display device, a glass substrate for a plasma display panel, a substrate for an optical disk, and a magnetic disk. The present invention relates to a substrate processing apparatus and method for performing a cleaning process on various substrates such as a substrate for optical disk, a substrate for magneto-optical disk, and a substrate for photomask.

  The manufacturing process of an electronic component such as a semiconductor device or a liquid crystal display device includes a microfabrication process in which a fine pattern or the like is formed by repeatedly performing processes such as film formation and etching on the surface of a substrate. In order to perform this microfabrication process satisfactorily, it is necessary to keep the surface of the substrate clean. Therefore, conventionally, the surface of the substrate has been cleaned as necessary.

  As a conventional substrate processing apparatus and substrate processing method for cleaning the surface of a substrate, for example, there is one disclosed in Patent Document 1.

  In this substrate processing apparatus and substrate processing method, when a relatively large foreign matter remains on the substrate, the foreign matter is removed from the substrate by brush cleaning. Further, when a medium-sized foreign substance exists on the substrate, the foreign substance is removed from the substrate by ultrasonic cleaning that applies ultrasonic vibration to the substrate. Furthermore, when a minute foreign substance remains on the substrate, a liquid jet is formed by mixing the liquid and the gas, and a two-fluid nozzle that discharges the liquid jet toward the substrate surface is provided. The two-fluid cleaning used eliminates foreign matter from the substrate.

  In this cleaning process, the rotation mechanism moves the nozzle relative to the substrate while the substrate is rotated about the center of the substrate or while the substrate is stopped at a predetermined position. In addition, the processing liquid is discharged from the nozzle toward the substrate while changing the angle of the nozzle with respect to the substrate.

  By these treatments, foreign matters such as particles (fine filth) adhering to the substrate surface are removed from the substrate, and the substrate is cleaned.

JP 2004-319708 A

However, in the technique described in Patent Document 1, since the processing liquid discharged from the nozzle is configured to diffuse on the substrate as it is, diffusion of the processing liquid to a portion that should not be diffused cannot be suppressed.
Therefore, the diffusion of the processing liquid may cause unnecessary damage to the substrate and may cause the circuit pattern to collapse. In addition, there is a possibility that the foreign matter once detached from the substrate is reattached to the substrate before it is removed from the substrate.

  An object of the present invention is to provide a substrate processing apparatus that suppresses diffusion of a processing liquid discharged from a nozzle more than necessary and effectively removes foreign matters once detached from the substrate.

  The present invention employs the following configuration in order to solve the above problems.

The present invention relates to a substrate processing apparatus that performs cleaning processing of foreign matters on a substrate.
And a processing fluid nozzle that discharges the processing fluid to the foreign matter, a diffusion suppression unit that suppresses diffusion of the processing fluid discharged by the processing fluid nozzle, and a first moving unit that moves the diffusion suppression unit. The suppression unit is disposed so as to surround the processing fluid nozzle and is formed in a shape having an opening in one direction, and is configured to discharge gas to the substrate. The first moving unit is formed by the processing fluid nozzle. When the processing fluid is ejected, the position of the diffusion suppressing portion is moved so as to face the peripheral portion of the substrate.

  The substrate processing apparatus further includes a substrate holding rotating unit that holds and rotates an arbitrary position of the substrate, and a processing fluid nozzle that rotates in synchronization with the substrate holding rotating unit, and moves the substrate relative to the substrate. The first moving unit rotates the diffusion suppressing unit in synchronization with the substrate holding and rotating unit, and causes the processing fluid discharged from the processing fluid nozzle onto the substrate by rotating the substrate. The diffusion suppression unit is moved so that the opening of the diffusion suppression unit is arranged in the direction of the centrifugal force.

  Further, the substrate is formed in a substantially circular shape, and the substrate holding and rotating portion is at an off-center position with respect to the substantially circular shape, and is longer than the distance connecting the position of the foreign matter on the substrate and the position of the substantially circular center. The position of the distance on the substrate is held, and the substrate is rotated with this position as the center of rotation.

  The substrate processing apparatus further includes an angle changing unit configured to be able to change an angle formed between the processing fluid nozzle and the substrate, and the processing fluid nozzle discharges the processing fluid when the angle is an acute angle with respect to the substrate. It is characterized in that the opening of the diffusion suppressing part is arranged in the direction.

Another aspect of the present invention relates to a substrate processing method for cleaning foreign matter on a substrate using a substrate processing apparatus.
The substrate processing apparatus is formed to have a processing fluid nozzle that discharges a processing fluid to a foreign substance, a shape surrounding the processing fluid nozzle and provided with an opening in one direction, and discharges gas to the substrate. A diffusion suppressing unit that suppresses diffusion of the processing fluid discharged by the processing fluid nozzle, and a first moving unit that moves the diffusion suppressing unit, and when the processing fluid is discharged by the processing fluid nozzle, the first The moving unit includes a step of moving the position of the diffusion suppressing unit so that the opening of the diffusion suppressing unit faces the peripheral edge of the substrate.

  According to the present invention, since it has the above-described features, the following becomes possible.

  That is, in a substrate processing apparatus that cleans foreign matter on a substrate, a processing fluid nozzle that discharges processing fluid to the foreign matter, a diffusion suppression unit that suppresses diffusion of the processing fluid discharged by the processing fluid nozzle, and diffusion suppression And a diffusion suppressing portion is formed so as to surround the processing fluid nozzle and has an opening in one direction so as to release a gas to the substrate. The first moving unit is configured to move its position so that the opening of the diffusion suppressing unit faces the peripheral edge of the substrate when the processing fluid is discharged by the processing fluid nozzle. In the portion surrounding the periphery of the processing fluid nozzle, the diffusion of the droplets can be suppressed by the gas, and the processing fluid can be discharged in a predetermined direction toward the opening provided in one direction. Thereby, it is possible to suppress unnecessary damage to the substrate due to diffusion of the processing fluid and occurrence of circuit pattern collapse. Further, since the processing fluid is discharged in a predetermined direction, it is possible to effectively remove foreign substances out of the substrate.

  The substrate processing apparatus further includes a substrate holding rotating unit that holds and rotates an arbitrary position of the substrate, and a processing fluid nozzle that rotates in synchronization with the substrate holding rotating unit, and moves the substrate relative to the substrate. The first moving unit rotates the diffusion suppressing unit in synchronization with the substrate holding and rotating unit, and causes the processing fluid discharged from the processing fluid nozzle onto the substrate by rotating the substrate. Since the diffusion suppression unit is configured to move so that the opening of the diffusion suppression unit is arranged in the direction of the centrifugal force, the removal of foreign substances to the outside of the substrate by the centrifugal force applied to the processing fluid is more effective. Can be.

  Further, the substrate is formed in a substantially circular shape, and the substrate holding and rotating portion is at an off-center position with respect to the substantially circular shape, and is longer than the distance connecting the position of the foreign matter on the substrate and the position of the substantially circular center. Since the position of the distance on the substrate is held and the substrate is rotated with this position as the center of rotation, the distance from the position of the foreign material on the substrate to the position held by the substrate holding rotation unit is The distance from the position on the substrate to the substantially circular center position of the substrate can be longer. That is, when the rotation speed is the same, a larger centrifugal force can be obtained, and the removal of foreign matters to the outside of the substrate can be made more effective.

  The substrate processing apparatus further includes an angle changing unit configured to be able to change an angle formed between the processing fluid nozzle and the substrate, and the processing fluid nozzle discharges the processing fluid when the angle is an acute angle with respect to the substrate. Since the opening of the diffusion suppressing unit is arranged in the direction, the discharge direction and the direction of the opening coincide with each other, and the removal of the foreign matter to the outside of the substrate can be made more effective.

  In the substrate processing method in which the foreign matter on the substrate is cleaned by the substrate processing apparatus, the substrate processing apparatus is disposed so as to surround the processing fluid nozzle and the processing fluid nozzle that discharges the processing fluid to the foreign matter. Formed in a shape having an opening in the direction, and a diffusion suppressing unit that suppresses diffusion of the processing fluid ejected by the processing fluid nozzle by discharging gas to the substrate, and a first moving unit that moves the diffusion suppressing unit When the processing fluid is ejected by the processing fluid nozzle, the diffusion suppressing unit moves the position of the diffusion suppressing unit so that the opening of the diffusion suppressing unit faces the peripheral edge of the substrate. A step of allowing the liquid to flow in a predetermined direction toward the opening provided in one direction while suppressing the diffusion of the liquid droplets in the portion surrounding the processing fluid nozzle. it can. Thereby, it is possible to suppress unnecessary damage to the substrate due to diffusion of the processing fluid and occurrence of circuit pattern collapse. Further, since the processing fluid is discharged in a predetermined direction, it is possible to effectively remove foreign substances out of the substrate.

The block diagram which shows the structure of the substrate processing apparatus which concerns on one Embodiment of this invention. Schematic which shows the specific structural example of the washing process part which concerns on one Embodiment of this invention. It is the schematic which shows the positional relationship of the nozzle and board | substrate which concerns on one Embodiment of this invention, (a) is the case where a process fluid nozzle is arrange | positioned perpendicularly | vertically with respect to a board | substrate, (b) is the case where a process fluid nozzle is inclined Schematic of Schematic which shows the structure of the diffusion suppression part which concerns on one Embodiment of this invention. Structural drawing showing the main part of a diffusion suppression unit according to an embodiment of the present invention Schematic which shows a mode that a foreign material is removed out of a board | substrate using the diffusion suppression part which concerns on one Embodiment of this invention.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

FIG. 1 is a block diagram for explaining the configuration of the substrate processing apparatus, and includes a foreign matter measuring unit 1, a storage device 2, a control device 3, and a cleaning processing unit 4.
The foreign matter measuring unit 1 measures the foreign matter on the substrate, and the foreign matter information as the measurement result is stored in the storage device 2. The control device 3 sets a substrate cleaning process according to the measurement result of the foreign matter information based on the foreign matter information stored in the storage device 2, that is, information such as the position coordinates, shape, and size of the foreign matter. The cleaning processing unit 4 executes the substrate cleaning process according to the set substrate cleaning process.

  FIG. 2 is a conceptual diagram for explaining a specific configuration example of the cleaning processing unit 4, particularly a configuration example of the nozzle unit (processing fluid nozzle) 15 and the substrate holding and rotating unit 10. Here, the substrate 17 has a substantially circular shape such as a semiconductor wafer.

  As shown in FIG. 2, the substrate holding / rotating unit 10 includes a spin chuck 11 and a substrate rotation drive mechanism 13. The spin chuck 11 holds the substrate 17 in a substantially horizontal posture and rotates it around the vertical axis. A rotation force from a substrate rotation drive mechanism 13 including a motor or the like is applied to the substrate rotation shaft 12 of the spin chuck 11, and the substrate 17 chucked and held by the spin chuck 11 is held by the spin chuck 11. Rotate around the vertical axis around the rotating part.

  As shown in FIG. 2, the nozzle unit 15 includes an ultrasonic nozzle 15a, a two-fluid spray nozzle 15b, and a chemical liquid nozzle 15c.

  The ultrasonic nozzle 15 a has a basic form as a scan nozzle that can change the supply position of the processing liquid (processing fluid) over at least the range from the rotation center to the peripheral edge of the substrate 17 held by the spin chuck 11. is doing. Further, a moving means (second moving portion) (not shown) that moves the ultrasonic nozzle 15 a in synchronization with the rotation of the substrate 17 is provided. Therefore, when the control device 3 controls the moving means, the relative positional relationship between the ultrasonic nozzle 15a and the substrate 17 is controlled.

  The two-fluid spray nozzle 15 b forms a jet of droplets (processing fluid) by mixing a gas and a liquid, and sprays this jet on the surface of the substrate 17. Similar to the ultrasonic nozzle 15a, the two-fluid spray nozzle 15b has a basic form as a scan nozzle capable of changing the processing position in a range including at least the range from the rotation center of the substrate 17 to the peripheral portion thereof. Furthermore, a moving means (second moving part) (not shown) for moving the two-fluid spray nozzle 15b in synchronization with the rotation of the substrate 17 is provided. Accordingly, the relative positional relationship between the two-fluid spray nozzle 15b and the substrate 17 is controlled by the control device 3 controlling the moving means.

  Similarly to the ultrasonic nozzle 15a and the two-fluid spray nozzle 15b, the chemical liquid (processing fluid) nozzle 15c is a basic scan nozzle that can change the processing position in a range including at least the range from the rotation center of the substrate 17 to the peripheral edge thereof. It has a form. Furthermore, a moving means (second moving part) (not shown) that moves in synchronization with the rotation of the substrate 17 is provided. Therefore, when the control device 3 controls the moving means, the relative positional relationship between the chemical nozzle 15c and the substrate 17 is controlled.

  FIG. 3 shows the nozzle unit 15 and the substrate 17 when the foreign matter 20 on the substrate 17 is detached from the substrate 17 by the nozzle unit 15 and removed from the substrate 17 while the substrate 17 is held and rotated by the spin chuck 11. It is the schematic which shows the example of positional relationship with.

  As shown in FIGS. 3A and 3B, the ultrasonic nozzle 15a and the two-fluid spray nozzle 15b change the angle between the ultrasonic nozzle 15a and the two-fluid spray nozzle 15b and the substrate 17 by the above-described moving means. The angle between the ultrasonic nozzle 15 a and the two-fluid spray nozzle 15 b and the substrate 17 is controlled by the control device 3. As an example, in the state before the foreign matter leaves the substrate in the first half of the cleaning process, the ultrasonic nozzle 15a and the two-fluid spray nozzle 15b are perpendicular to the surface of the substrate 17 as shown in FIG. In the state after the foreign matter is detached from the substrate in the latter half of the cleaning process, as shown in FIG. 3B, the processing fluid discharged from the tips of the ultrasonic nozzle 15a and the two-fluid spray nozzle 15b The ultrasonic nozzle 15a and the two-fluid spray nozzle 15b are controlled to be inclined at an acute angle with respect to the substrate 17, for example, as indicated by θ in the figure.

  Moreover, in this embodiment, the diffusion suppression part 22 is provided so that the ultrasonic nozzle 15a and the two-fluid spray nozzle 15b may be enclosed. The diffusion suppressing unit 22 suppresses the diffusion of the droplets (processing fluid) 21 discharged from the ultrasonic nozzle 15a and the two-fluid spray nozzle 15b or the foreign matter 20 detached from the substrate on the substrate 17. The fluid flow (processing fluid) 23 toward the edge of the substrate 17 can be efficiently discharged out of the substrate 17.

  The diffusion suppressing unit 22 has a basic form in which the processing position can be changed in a range including at least the range from the rotation center of the substrate 17 to the peripheral portion thereof. Further, a moving means (first moving unit) (not shown) that moves the diffusion suppressing unit 22 in synchronization with the rotation of the substrate 17 is provided. Therefore, the relative positional relationship between the diffusion suppression unit 22 and the substrate 17 is controlled by the control device 3 controlling the moving means.

  4 to 6 show details of the diffusion suppressing unit 22. That is, FIG. 4 is a schematic diagram showing the configuration of the diffusion suppressing unit 22, and is a view of the relationship between the diffusion suppressing unit 22 and the substrate 17 as viewed from the side, and FIG. FIG. 6 is a side view of the diffusion suppressing unit 22, and FIG. 6 is a schematic diagram showing how foreign substances are removed from the substrate 17 using the diffusion suppressing unit 22, and the diffusion preventing unit 22. It is the figure which looked at etc. from the upper surface.

As shown in FIGS. 4 and 5, the diffusion suppressing unit 22 is an assembly of gas blowing units 28 for blowing compressed gas, and is above the substrate 17 and separated from the substrate 17 by a predetermined interval. However, it is arranged. The gas discharged from the gas cylinder 26 is introduced into the gas pipe 24, and the gas flow rate is adjusted by a valve 25 provided in the middle thereof. The gas is led from the gas pipe 24 to the gas inlet 27 and is divided into the respective gas blowing units 28 provided in the diffusion suppressing unit 22. A gas passage portion 29 is provided below the gas blowing unit 28, and the gas guided to each gas blowing unit 28 of the diffusion suppressing portion 22 passes through the gas passage portion 29 and is formed at the lower end thereof. The gas is discharged from the gas discharge port 30 toward the substrate 17 with a predetermined flow rate.
Here, the gas to be released is preferably an inert gas (for example, nitrogen gas), but various gases can be used according to the type and process of the substrate 17.

  As shown in FIGS. 3 and 6, the diffusion suppressing portion 22 has a shape in which three directions are closed and one direction is opened when viewed from above, and is formed in a U shape as a whole. The position of the opening of the diffusion suppressing unit 22 is controlled so that it is disposed toward the peripheral edge of the substrate 17 when the droplet 21 is discharged from the ultrasonic nozzle 15a and the two-fluid spray nozzle 15b. The

  The gas discharged from the gas discharge port 30 of each gas blowing unit 28 constituting the diffusion suppressing unit 22 is blown toward the substrate 17. The gas discharged from the gas discharge port 30 forms a U-shaped gas wall like a so-called air curtain as a whole, and the gas blown toward the substrate 17 is a diffusion suppressing portion. 22 flows separately inside and outside. The gas separated inside flows in the direction of the opening of the diffusion suppressing unit 22. With this gas flow, it is possible to suppress the diffusion of the droplet 21 at the portion where the three directions of the diffusion suppressing portion 22 are closed, and discharge the droplet 21 and the like so as to flow in the direction of the opening portion.

  As shown in FIG. 6, when the droplet 21 is ejected from the ultrasonic nozzle 15 a and the two-fluid spray nozzle 15 b to the foreign material 20, since there is a diffusion suppression unit 22, the ultrasonic nozzle 15 a and the two-fluid spray nozzle 15 b The droplets 21 discharged from the substrate and the foreign matter 20 detached from the substrate are suppressed from diffusing outside the diffusion suppressing unit 22 and become a fluid flow 23 toward the substrate edge, which is efficient as indicated by arrows in the figure. Thus, it is removed out of the substrate 17.

  As shown in FIG. 6, the shape of the diffusion suppressing portion 22 is such that the open portion is opened in a U shape toward the outside, so that the fluid flow 23 or the like toward the substrate edge flows smoothly. The U-shape may be a parabola or a quadratic curve obtained by cutting out a part of an ellipse, for example.

  Alternatively, the diffusion suppressing unit 22 may have a shape in which two parallel line portions are connected to the end of a semicircle. By setting the opening portion to a predetermined width, it is possible to regulate a portion that is touched when the fluid flow 23 toward the substrate edge flows along the substrate 17. Further, two continuous parallel line portions coming out from the end of the diffusion suppressing portion 22 are extended to the peripheral edge of the substrate 17, and the fluid flow 23 toward the substrate edge is surely discharged out of the substrate 17 through a predetermined path. You may comprise.

  In addition, the nozzle unit 15 and the diffusion suppressing unit 22 are rotated while maintaining a relative position in synchronization with the substrate 17 by the moving means controlled by the control device 3 as described above. At this time, the droplet 21 and the gas are supplied to the nozzle unit 15 and the diffusion suppressing unit 22 using, for example, a rotary joint (rotary joint).

  As described above in detail, in the present embodiment, as shown in FIG. 3, the diffusion suppressing portion 22 is arranged so as to surround the ultrasonic nozzle 15 a and the two-fluid spray nozzle 15 b, and the opening portion is formed on the substrate 17. The position is controlled so as to face the peripheral edge. With this configuration, the droplets 21 and the foreign matter 20 discharged from the ultrasonic nozzle 15a and the two-fluid spray nozzle 15b can be effectively removed outside the substrate 17 as the fluid flow 23.

As shown in FIG. 3, the substantially circular substrate 17 is held off-center by the spin chuck 11 and rotates around the holding portion.
In other words, the spin chuck 11 does not hold the substantially circular center of the substrate 17, and the distance between the position of the foreign matter 20 and the position of the substantially circular center is longer than the distance connecting the position of the foreign matter 20 on the substrate 17. The position on the substrate is held, and the substrate is rotated with this position as the center of rotation. By holding the substrate 17 in this way, the distance from the foreign material 20 can be made larger than when the substrate 17 is held at its center, and a greater centrifugal force can be obtained.

  In particular, when the foreign material 20 is in the vicinity of the center of the substrate 17, if the rotation center is the center of the substrate 17, a sufficient centrifugal force cannot be obtained. In such a case, if the substrate 17 is held off-center as in the present embodiment, a larger centrifugal force can be obtained, and the foreign matter 20 and the droplets 21 can be quickly removed. At this time, the moving mechanism described above is such that the centrifugal force acts in the direction in which the opening of the diffusion suppressing unit 22 is opposite to the rotation center of the substrate 17, that is, the direction toward the outward extension of the substrate 17. The diffusion suppressing unit 22 is controlled so that the opening is located.

In addition, a substrate moving unit (not shown) controlled by the control device 3 may be further provided for chucking the substrate 17 at a predetermined position by the spin chuck 11.
In this case, when there are a plurality of foreign substances 20, the substrate moving unit controlled by the control device 3 is weighted according to the size, type, etc. of these foreign substances 20 and chucked at an optimum position that is easy to clean. Thus, the substrate 17 can be moved and chucked by the spin chuck 11.

  In the present embodiment, the diffusion suppression unit 22 and the substrate 17 are configured to rotate while maintaining a relative position. However, the present invention is not limited to this, and the substrate 17 and the diffusion suppression unit 22 are stationary. Even if it exists, the diffusion suppression part 22 can suppress the spreading | diffusion of the droplet 21, and the same effect of discharging the droplet 21 to the peripheral part of a board | substrate can be acquired.

  Note that the substrate processing apparatus of the present invention is not limited to the above-described embodiments, and various modifications can be made. As an example, in the above-described embodiment, the semiconductor wafer is used as the substrate 17. However, the present invention is not limited to this, and the glass substrate for photomask, the glass substrate for liquid crystal display, the glass substrate for plasma display, the substrate for FED, and the optical disk. Various substrates such as an optical substrate, a magnetic disk substrate, and a magneto-optical disk substrate may be used. In the above-described embodiment, the nozzle unit 15 includes the ultrasonic nozzle 15a, the two-fluid spray nozzle 15b, and the chemical solution nozzle 15c. However, any nozzle is adopted in consideration of the efficiency of substrate processing. Is optional.

DESCRIPTION OF SYMBOLS 1 Foreign material measurement part 2 Memory | storage device 3 Control apparatus 4 Substrate processing part 10 Substrate holding | maintenance rotation part 11 Spin chuck 12 Substrate rotating shaft 13 Substrate rotation drive mechanism 15 Nozzle unit 15a Ultrasonic nozzle 15b Two-fluid spray nozzle 15c Chemical solution nozzle 17 Substrate 18 Nozzle Rotating shaft 19 Nozzle rotation drive mechanism 20 Foreign matter 21 Droplet 22 Diffusion suppression unit 23 Fluid flow toward substrate edge 24 Gas pipe 25 Valve 26 Gas cylinder 27 Gas inlet 28 Gas blowing unit 29 Gas passage 30 Gas outlet 30

Claims (5)

In a substrate processing apparatus for cleaning foreign matter on a substrate,
A processing fluid nozzle for discharging a processing fluid to the foreign matter;
A diffusion suppression unit that suppresses diffusion of the processing fluid discharged by the processing fluid nozzle;
A first moving unit for moving the diffusion suppression unit,
The diffusion suppressing part is formed so as to surround the processing fluid nozzle and is provided with an opening in one direction, and is configured to discharge a gas to the substrate.
The first moving unit moves its position so that the opening of the diffusion suppressing unit faces the peripheral edge of the substrate when the processing fluid is discharged by the processing fluid nozzle. Processing equipment. The substrate processing apparatus includes:
A substrate holding and rotating unit for holding and rotating an arbitrary position of the substrate;
A second moving unit that rotates the processing fluid nozzle in synchronization with the substrate holding rotating unit and moves the processing fluid nozzle relative to the substrate;
Further comprising
The first moving unit rotates the diffusion suppressing unit in synchronization with the substrate holding / rotating unit, and performs centrifugation on the processing fluid discharged from the processing fluid nozzle onto the substrate as the substrate rotates. The substrate processing apparatus according to claim 1, wherein the diffusion suppression unit is moved so as to arrange the opening of the diffusion suppression unit in the direction of force. The substrate is formed in a substantially circular shape,
The substrate holding / rotating unit is off-center with respect to the substantially circular shape, and is longer on the substrate than a distance connecting the position of the foreign matter on the substrate and the position of the substantially circular center. The substrate processing apparatus according to claim 2, wherein the substrate is rotated while the position is held and the position is set as a rotation center. The substrate processing apparatus further includes an angle changing unit configured to change an angle formed by the processing fluid nozzle and the substrate,
2. The configuration is such that, when the angle is an acute angle with respect to the substrate, the opening of the diffusion suppressing portion is arranged in a discharge direction in which the processing fluid nozzle discharges the processing fluid. The substrate processing apparatus as described. In a substrate processing method for cleaning foreign matter on a substrate with a substrate processing apparatus,
The substrate processing apparatus includes:
A processing fluid nozzle for discharging a processing fluid to the foreign matter;
Diffusion that is disposed around the processing fluid nozzle and has an opening in one direction, and suppresses diffusion of the processing fluid discharged by the processing fluid nozzle by releasing gas to the substrate. A suppression unit;
A first moving unit for moving the diffusion suppression unit,
When discharging the processing fluid from the processing fluid nozzle, the first moving unit moves the position of the diffusion suppression unit so that the opening of the diffusion suppression unit faces the peripheral edge of the substrate. A substrate processing method comprising:

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