TW201829073A - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method Download PDF

Info

Publication number
TW201829073A
TW201829073A TW106140563A TW106140563A TW201829073A TW 201829073 A TW201829073 A TW 201829073A TW 106140563 A TW106140563 A TW 106140563A TW 106140563 A TW106140563 A TW 106140563A TW 201829073 A TW201829073 A TW 201829073A
Authority
TW
Taiwan
Prior art keywords
substrate
liquid
contact position
liquid contact
rotation
Prior art date
Application number
TW106140563A
Other languages
Chinese (zh)
Other versions
TWI686243B (en
Inventor
太田喬
山田邦夫
相原友明
奥田次郎
林昌之
Original Assignee
日商斯庫林集團股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商斯庫林集團股份有限公司 filed Critical 日商斯庫林集團股份有限公司
Publication of TW201829073A publication Critical patent/TW201829073A/en
Application granted granted Critical
Publication of TWI686243B publication Critical patent/TWI686243B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02043Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052Wet cleaning only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02296Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02343Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a liquid
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/6715Apparatus for applying a liquid, a resin, an ink or the like
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67259Position monitoring, e.g. misposition detection or presence detection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The purpose of the present invention is to improve the thickness uniformity of a film of a chemical liquid supplied to a central region of a substrate while supplying the chemical liquid to the entire region of the top surface of the substrate. In order to achieve said purpose, the ejection direction when a first nozzle ejects a chemical liquid is set in a direction having: a component oriented upstream along a tangential direction at a first liquid-landing position; and a component oriented toward a rotation axis from the first liquid-landing position along a radial direction of the substrate, wherein the radial direction is perpendicular to the tangent. The tangential velocity component of the chemical liquid ejection velocity through the first nozzle has a magnitude that allows said chemical liquid to overcome the force oriented downstream and flow upstream, and the radial velocity component of the ejection velocity has a magnitude that allows said chemical liquid to overcome the centrifugal force and flow toward the rotation axis side. The ejection direction when a second nozzle ejects a chemical liquid is set in a direction having a component which is oriented downstream along a tangential direction at a second liquid-landing position when viewed from above the second nozzle.

Description

基板處理裝置及基板處理方法    Substrate processing device and substrate processing method   

本發明係關於一種對半導體晶圓、液晶顯示裝置用玻璃基板、電漿顯示器用玻璃基板、光碟用基板、磁碟用基板、光磁碟用基板、光罩用玻璃基板、太陽電池用基板等(以下簡稱為「基板」)實施處理之基板處理技術。 The present invention relates to a semiconductor wafer, a glass substrate for a liquid crystal display device, a glass substrate for a plasma display, a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a magneto-optical disk, a glass substrate for a photomask, and a substrate for a solar cell. (Hereinafter referred to as "substrate") substrate processing technology for performing processing.

於專利文獻1中揭示有一種對基板進行清洗之清洗裝置。該清洗裝置具備自基板之上方外側向正旋轉之基板之上表面分別噴出清洗液的第一噴嘴及第二噴嘴。第一噴嘴沿著於自上方觀看基板時通過基板中心的傾斜向下之噴出方向,以噴擊較基板中心更靠第一噴嘴側之液體接觸位置的方式噴出液柱狀之第一清洗液。於基板之中心附近離心力較弱。因此,第一清洗液沿著自上方觀看基板時與噴出方向重疊之基板上之直線,自液體接觸位置朝向基板之中心流動並於基板之中心上通過,進而一邊維持液柱狀之形狀一邊到達越過基板中心之位置。基板之周緣側離心力較強,故而越過基板中心之第一清洗液擴展成液膜狀, 並且一邊向基板之旋轉方向之下游側彎曲一邊朝向基板之周緣流動。 Patent Document 1 discloses a cleaning device for cleaning a substrate. The cleaning device includes a first nozzle and a second nozzle that eject cleaning liquid from the upper side of the substrate to the upper surface of the substrate that is rotating forward. The first nozzle sprays the first cleaning liquid in a liquid column shape by spraying a liquid contact position closer to the first nozzle side than the center of the substrate when the substrate is obliquely downward when passing through the center of the substrate when the substrate is viewed from above. The centrifugal force is weak near the center of the substrate. Therefore, the first cleaning liquid follows a straight line on the substrate that overlaps with the ejection direction when the substrate is viewed from above, flows from the liquid contact position toward the center of the substrate and passes over the center of the substrate, and then reaches the liquid column shape while maintaining the shape Over the center of the substrate. The centrifugal force on the peripheral edge of the substrate is strong. Therefore, the first cleaning liquid that has passed the center of the substrate expands into a liquid film shape, and flows toward the peripheral edge of the substrate while bending toward the downstream side of the substrate in the rotation direction.

第二噴嘴自基板外側噴出之液柱狀之第二清洗液於基板中心之上方通過,接觸於基板上之第一清洗液之液柱及液膜未觸及的位置。第二清洗液之液體接觸位置係較第一清洗液之液體接觸位置更靠基板之旋轉方向下游側的位置,且係較第一清洗液之液體接觸位置更遠離基板中心而強離心力發揮作用之位置。接觸後之第二清洗液受到離心力之影響而擴展成液膜狀,並且不妨礙基板上之第一清洗液之流動而一邊向基板之旋轉方向下游側彎曲一邊朝向基板之周緣流動。 A liquid column-shaped second cleaning liquid sprayed from the outside of the substrate by the second nozzle passes above the center of the substrate, and contacts the liquid column and the liquid film of the first cleaning liquid on the substrate without touching the position. The liquid contact position of the second cleaning liquid is closer to the downstream side of the substrate in the rotation direction than the liquid contact position of the first cleaning liquid, and it is farther from the center of the substrate than the liquid contact position of the first cleaning liquid, and the strong centrifugal force works. position. The second cleaning liquid after contact is expanded into a liquid film shape by the influence of centrifugal force, and does not hinder the flow of the first cleaning liquid on the substrate, and flows toward the peripheral edge of the substrate while bending toward the downstream side in the rotation direction of the substrate.

專利文獻1之清洗裝置藉由上述構成而實現利用第一清洗液對基板之中心部進行清洗,並且利用第二清洗液對基板中之較中心部更靠外側之周邊部進行清洗。另外,該清洗裝置藉由使第一清洗液與第二清洗液於基板上不妨礙彼此之流動,亦實現使清洗度提高。 The cleaning device of Patent Document 1 has the above-described configuration to clean the central portion of the substrate with the first cleaning liquid, and to clean the peripheral portion of the substrate that is further outside than the central portion with the second cleaning liquid. In addition, this cleaning device also improves the degree of cleaning by preventing the first cleaning liquid and the second cleaning liquid from interfering with each other on the substrate.

[先前技術文獻] [Prior technical literature]

[專利文獻] [Patent Literature]

專利文獻1:日本專利特開2015-201627號公報。 Patent Document 1: Japanese Patent Laid-Open Publication No. 2015-201627.

專利文獻1之清洗裝置中,必須使第二噴嘴所噴出之第二清洗液不妨礙基板上之第一清洗液之流動。因此,第二噴嘴所噴出之液柱狀之第二清洗液必須自基板之上方外側傾斜向下地橫穿正於基板上流動的第一處理液之液柱狀部分之上方,到達相對於基板中心而與第二噴嘴為相反側之液體接觸位置。另一方面,若第二清洗液之液體接觸位置距基板中心過遠,則可利用第二清洗液進行清洗之範圍變窄。因此,第二清洗液必須準確地到達經設定為距基板中心之距離成為基板半徑之四分之一以下的位置之液體接觸位置。另外,第一清洗液亦必須以不與第二清洗液觸碰之方式,準確地噴出至較第二清洗液之液體接觸位置進一步靠內側之液體接觸位置。因此,第一噴嘴所噴出之第一清洗液、第二噴嘴所噴出之第二清洗液之各流量(各流速)必須根據各噴出口之口徑等而嚴格設定。 In the cleaning device of Patent Document 1, it is necessary to prevent the second cleaning liquid ejected from the second nozzle from interfering with the flow of the first cleaning liquid on the substrate. Therefore, the liquid column-shaped second cleaning liquid sprayed from the second nozzle must cross the liquid column-shaped portion of the first processing liquid flowing on the substrate obliquely downward from above and outside the substrate to reach the center of the substrate. And the liquid contact position on the opposite side to the second nozzle. On the other hand, if the liquid contact position of the second cleaning liquid is too far from the center of the substrate, the range in which the second cleaning liquid can be used for cleaning becomes narrower. Therefore, the second cleaning liquid must accurately reach the liquid contact position which is set to a position where the distance from the center of the substrate becomes a quarter or less of the radius of the substrate. In addition, the first cleaning liquid must also be accurately ejected to a liquid contact position further inside than the liquid contact position of the second cleaning liquid in a way that it does not contact the second cleaning liquid. Therefore, the respective flow rates (respective flow rates) of the first cleaning liquid sprayed from the first nozzle and the second cleaning liquid sprayed from the second nozzle must be set strictly according to the diameter of each spray outlet and the like.

此處,於使用蝕刻液等藥液進行基板之表面處理之情形時,藥液之反應性視溫度而變動,故而基板表面各部之處理速率視基板表面之溫度分佈而變動。因此,藉由將預先經加熱至預定溫度之藥液供給於基板之整個區域,而實現一邊控制以使基板表面整個區域之溫度分佈成為所需溫度分佈,一邊進行基板處理。 Here, in the case of using a chemical solution such as an etching solution for surface treatment of a substrate, the reactivity of the chemical solution varies depending on the temperature, and therefore, the processing rate of each portion of the substrate surface varies depending on the temperature distribution of the substrate surface. Therefore, by supplying a chemical solution heated in advance to a predetermined temperature to the entire area of the substrate, substrate processing is performed while controlling so that the temperature distribution of the entire area of the substrate surface becomes a desired temperature distribution.

然而,專利文獻1之清洗裝置於第一清洗液、第二清洗液之各流速稍偏離所需值之情形中,第一清洗液與第二清洗液於基板上碰撞,各清洗液流動之方向發生變化,故而無法將清洗液供給於基板之中心上。亦即,對於專利文獻1之裝置而言,於未嚴格控制第一噴嘴、第二噴嘴噴出之各藥液之各流量之情形時,會產生無法將藥液供給於基板之上表面整個區域之問題、或供給於基板之中央區域的藥液之均勻性劣化之問題。 However, in the cleaning device of Patent Document 1, in the case where the respective flow rates of the first cleaning liquid and the second cleaning liquid slightly deviate from the required values, the first cleaning liquid collides with the second cleaning liquid on the substrate, and the directions of the respective cleaning liquids flow. There is a change so that the cleaning liquid cannot be supplied to the center of the substrate. That is, in the device of Patent Document 1, when the respective flow rates of the respective chemical liquids ejected from the first nozzle and the second nozzle are not strictly controlled, the chemical liquid cannot be supplied to the entire area of the upper surface of the substrate. A problem or a problem that the uniformity of the chemical solution supplied to the central region of the substrate is deteriorated.

本發明係為了解決此種問題而成,目的在於提供一種可於對旋轉之基板之表面噴出藥液而對基板進行處理之基板處理裝置中,一邊對基板之上表面整個區域供給藥液,一邊提高供給於基板之中央區域的藥液之膜厚之均勻性的技術。 The present invention is made to solve such a problem, and an object of the present invention is to provide a substrate processing apparatus capable of processing a substrate by spraying a chemical solution on the surface of a rotating substrate, while supplying the chemical solution to the entire area of the upper surface of the substrate. A technology for improving the uniformity of the film thickness of the chemical solution supplied to the center region of the substrate.

為了解決上述課題,第一態樣之基板處理裝置係具備:保持構件,能以大致水平姿勢一邊保持一邊旋轉基板;旋轉機構,使前述保持構件以旋轉軸為中心而旋轉;第一噴嘴,自較前述基板更靠上方噴出藥液,以使該藥液噴擊前述基板之旋轉軌跡中的中央區域與周邊區域之間的中間區域中之第一液體接觸位置;以及第二噴嘴,自較前述基板更靠上方噴出前述藥液,以使該藥液噴擊前述中間區域中之第二液體接觸位置;並且,自前述第一噴嘴之 上方於前述基板之前述旋轉軸方向上觀看,前述第一噴嘴噴出前述藥液時之噴出方向係含有以下分量之方向:沿著以前述旋轉軸為中心且通過前述第一液體接觸位置的圓在前述第一液體接觸位置之切線方向,且朝向前述基板之旋轉方向上游側的分量;以及沿著與該切線正交的前述基板之徑向,自前述第一液體接觸位置朝向前述旋轉軸的分量。前述第一噴嘴噴出前述藥液時之噴出速度的前述切線方向之速度分量具有以下大小:可克服因前述基板之旋轉而作用於前述第一液體接觸位置上之前述藥液的朝向前述基板之旋轉方向下游側的力,使該藥液向前述基板之旋轉方向上游側流動。前述噴出速度的前述徑向之速度分量具有以下大小:可克服作用於前述第一液體接觸位置上之前述藥液的由前述基板之旋轉所致之離心力,使該藥液向前述旋轉軸側流動。自前述第二噴嘴之上方於前述基板之旋轉軸方向上觀看,前述第二噴嘴噴出前述藥液時之噴出方向係含有以下分量之方向:沿著以前述旋轉軸為中心且通過前述第二液體接觸位置的圓在前述第二液體接觸位置之切線方向,且朝向前述基板之旋轉方向下游側的分量。 In order to solve the above problems, the substrate processing apparatus of the first aspect includes a holding member capable of rotating the substrate while holding the substrate in a substantially horizontal posture, a rotating mechanism that rotates the holding member around a rotation axis, and a first nozzle. Spraying the chemical liquid above the substrate so that the chemical liquid sprays the first liquid contact position in the intermediate area between the central area and the peripheral area in the rotation track of the substrate; and the second nozzle The substrate is ejected further above the substrate so that the solution sprays the second liquid contact position in the intermediate region; and when viewed from above the first nozzle in the direction of the rotation axis of the substrate, the first The ejection direction when the nozzle ejects the chemical solution is a direction containing the following components: along a tangential direction of the circle passing through the first liquid contact position centered on the rotation axis and passing through the first liquid contact position, and toward the substrate The component on the upstream side of the direction of rotation; and along the radial direction of the substrate orthogonal to the tangent, from the first liquid contact The position is directed toward the aforementioned component of the rotation axis. The speed component in the tangential direction of the ejection speed when the first nozzle ejects the chemical liquid has the following magnitude: it can overcome the rotation of the chemical liquid that is acting on the first liquid contact position due to the rotation of the substrate toward the substrate. The force on the downstream side causes the chemical solution to flow toward the upstream side in the rotation direction of the substrate. The radial velocity component of the ejection speed has the following magnitude: it can overcome the centrifugal force caused by the rotation of the substrate on the chemical liquid acting on the first liquid contact position, so that the chemical liquid flows toward the rotation axis side . Viewed from above the second nozzle in the direction of the rotation axis of the substrate, the discharge direction when the second nozzle ejects the chemical solution is a direction containing the following components: along the center of the rotation axis and passing through the second liquid A component of the circle of the contact position in the tangential direction of the second liquid contact position and toward the downstream side of the rotation direction of the substrate.

第二態樣之基板處理裝置係第一態樣之基板處理裝置,且前述第一噴嘴噴出之前述藥液之前述第一液體接觸位置、與前述第二噴嘴噴出之前述藥液之前述第二液體接觸位置係距前述旋轉軸為相同距離。 The substrate processing apparatus of the second aspect is the substrate processing apparatus of the first aspect, and the first liquid contact position of the chemical liquid ejected by the first nozzle, and the second of the chemical liquid ejected by the second nozzle The liquid contact position is the same distance from the aforementioned rotation axis.

第三態樣之基板處理裝置係第一態樣之基板處理裝置,且藉由前述第一噴嘴噴出之前述藥液之前述第一液體接觸位置、與前述基板之周緣中最接近前述第一液體接觸位置之點的中點來定義關注中點時,前述第二噴嘴噴出之前述藥液之前述第二液體接觸位置係較前述第一液體接觸位置更遠離前述旋轉軸,且較前述關注中點更接近前述旋轉軸。 The substrate processing apparatus of the third aspect is the substrate processing apparatus of the first aspect, and the first liquid contact position of the chemical liquid ejected by the first nozzle is closest to the first liquid among the periphery of the substrate. When the midpoint of the point of contact position is used to define the center of attention, the second liquid contact position of the medicinal solution ejected by the second nozzle is farther from the rotation axis than the first liquid contact position, and is more than the middle point of attention. Closer to the aforementioned rotation axis.

第四態樣之基板處理裝置係第一態樣至第三態樣中任一態樣之基板處理裝置,且前述第一噴嘴噴出之前述藥液之前述第一液體接觸位置、與前述第二噴嘴噴出之前述藥液之前述第二液體接觸位置係於形成前述基板之直徑的同一直線上,分別位於將前述旋轉軸夾持於彼此之間的位置。 The fourth aspect of the substrate processing device is any one of the first aspect to the third aspect, and the first liquid contact position of the chemical liquid ejected by the first nozzle and the second liquid The second liquid contact positions of the chemical solution ejected by the nozzles are on the same straight line forming the diameter of the substrate, and are respectively located at positions where the rotation shafts are held between each other.

第五態樣之基板處理裝置係第一態樣至第三態樣中任一態樣之基板處理裝置,且前述第二噴嘴噴出之前述藥液之前述第二液體接觸位置係位於前述第一噴嘴噴出之前述藥液自前述第一液體接觸位置向周圍擴展而形成於前述基板上的液膜之上。 The substrate processing apparatus of the fifth aspect is the substrate processing apparatus of any one of the first aspect to the third aspect, and the second liquid contact position of the chemical solution ejected by the second nozzle is located at the first The chemical liquid sprayed from the nozzle is expanded from the first liquid contact position to the surroundings and is formed on the liquid film on the substrate.

第六態樣之基板處理裝置係具備:保持構件,能以大致水平姿勢一邊保持一邊旋轉基板;旋轉機構,使前述保 持構件以旋轉軸為中心而旋轉;第一噴嘴,自較前述基板更靠上方噴出藥液,以使該藥液噴擊前述基板之旋轉軌跡中的中央區域與周邊區域之間的中間區域中之第一液體接觸位置;以及第二噴嘴,自較前述基板更靠上方噴出前述藥液,以使該藥液噴擊前述中間區域中之第二液體接觸位置之;並且,前述第一噴嘴以如下方式噴出前述藥液:剛噴擊前述第一液體接觸位置後自前述第一液體接觸位置流向前述旋轉軸側的前述藥液之量,多於剛噴擊前述第一液體接觸位置後自前述第一液體接觸位置流向與前述旋轉軸相反之側的前述藥液之量;自前述第二噴嘴之上方於前述基板之旋轉軸方向上觀看,前述第二噴嘴噴出前述藥液時之噴出方向係含有以下分量之方向:沿著以前述旋轉軸為中心且通過前述第二液體接觸位置的圓在前述第二液體接觸位置之切線方向,且朝向前述基板之旋轉方向下游側的分量。 A sixth aspect of the substrate processing apparatus includes: a holding member capable of rotating the substrate while holding it in a substantially horizontal posture; a rotating mechanism that rotates the holding member around a rotation axis; and a first nozzle that is closer to the substrate than the substrate A chemical liquid is ejected from above to cause the chemical liquid to spray a first liquid contact position in a middle region between a central region and a peripheral region in the rotation track of the substrate; and a second nozzle is ejected from above the substrate. The medicinal solution is sprayed so that the medicinal solution hits the second liquid contact position in the intermediate region; and the first nozzle ejects the medicinal solution in the following manner: An amount of the chemical liquid flowing from a liquid contact position to the rotation axis side is greater than an amount of the chemical liquid flowing from the first liquid contact position to the side opposite to the rotation axis immediately after the first liquid contact position is sprayed; Viewed from above the second nozzle in the direction of the rotation axis of the substrate, the ejection direction when the second nozzle ejects the chemical solution includes the following Component direction: the component along the tangential direction of the circle passing through the second liquid contact position centered on the rotation axis and passing through the second liquid contact position toward the downstream side of the substrate in the rotation direction.

第七態樣之基板處理裝置係第一態樣或第六態樣之基板處理裝置,且前述第二噴嘴噴出之前述藥液之流量多於前述第一噴嘴噴出之前述藥液之流量。 The substrate processing apparatus of the seventh aspect is the substrate processing apparatus of the first aspect or the sixth aspect, and the flow rate of the chemical solution ejected by the second nozzle is greater than the flow rate of the chemical solution ejected by the first nozzle.

第八態樣之基板處理裝置係第一態樣或第六態樣之基板處理裝置,且自前述第二噴嘴之上方於前述基板之旋轉軸方向上觀看,前述第二噴嘴噴出前述藥液時之噴出方向係含有以下分量之方向:沿著以前述旋轉軸為中心且通 過前述第二液體接觸位置的圓在前述第二液體接觸位置之切線方向,且朝向前述基板之旋轉方向下游側的分量;以及沿著與該切線正交的前述基板之徑向,自前述第二液體接觸位置朝向與前述旋轉軸相反之側的分量。 The substrate processing apparatus of the eighth aspect is the substrate processing apparatus of the first aspect or the sixth aspect, and viewed from above the second nozzle in the direction of the rotation axis of the substrate, when the second nozzle ejects the chemical solution The ejection direction is a direction containing a component along the tangential direction of the circle passing through the second liquid contact position centered on the rotation axis and passing through the second liquid contact position toward the downstream side of the substrate in the rotation direction. And a component along the radial direction of the substrate orthogonal to the tangent line from the second liquid contact position toward the side opposite to the rotation axis.

第九態樣之基板處理裝置係第一態樣或第六態樣之基板處理裝置,且關於前述第一噴嘴與前述第二噴嘴之各噴嘴噴出前述藥液時之各噴出方向,自相對於前述各噴嘴而與前述旋轉軸為相反側之各位置於前述基板之徑向上觀看,前述各噴出方向係自前述基板之上方朝向傾斜向下的方向。 The substrate processing apparatus of the ninth aspect is the substrate processing apparatus of the first aspect or the sixth aspect, and the ejection directions when the nozzles of the first nozzle and the second nozzle eject the chemical liquid are relative to each other. Each of the nozzles is viewed in a radial direction of the substrate when the bits on the opposite side to the rotation axis are placed, and the ejection directions are obliquely downward from above the substrate.

第十態樣之基板處理方法係具備:旋轉步驟,一邊以大致水平姿勢保持基板一邊使該基板以旋轉軸為中心而旋轉;第一噴出步驟,與前述旋轉步驟並行,自較前述基板更靠上方噴出藥液,以使該藥液噴擊前述基板之旋轉軌跡中的中央區域與周邊區域之間的中間區域中之第一液體接觸位置;以及第二噴出步驟,與前述旋轉步驟及前述第一噴出步驟並行,自較前述基板更靠上方噴出前述藥液,以使該藥液噴擊前述中間區域中之第二液體接觸位置之方式;並且,前述第一噴出步驟中噴出之前述藥液之噴出方向係自上方於前述旋轉軸方向上觀看該藥液而含有以下分量之方向:沿著以前述旋轉軸為中心且通過前述第一液體接觸位置的圓在前述第一液體接觸位置之切線方 向,且朝向前述基板之旋轉方向上游側的分量;以及沿著與前述切線正交的前述基板之徑向,自前述第一液體接觸位置朝向前述旋轉軸的分量。前述第一噴出步驟中噴出之前述藥液之噴出速度的前述切線方向之速度分量具有以下大小:可克服因前述基板之旋轉而作用於前述第一液體接觸位置上之前述藥液的朝向前述基板之旋轉方向下游側的力,使該藥液向前述基板之旋轉方向上游側流動。前述噴出速度的前述徑向之速度分量具有以下大小:可克服作用於前述第一液體接觸位置上之前述藥液的由前述基板之旋轉所致之離心力,使該藥液向前述旋轉軸側流動。前述第二噴出步驟中噴出之前述藥液之噴出方向係自上方於前述旋轉軸方向上觀看該藥液而含有以下分量:沿著以前述旋轉軸為中心且通過前述第二液體接觸位置的圓在前述第二液體接觸位置之切線方向,且朝向前述基板之旋轉方向下游側的分量。 A tenth aspect of the substrate processing method includes: a rotation step, while rotating the substrate around the rotation axis while holding the substrate in a substantially horizontal posture; a first ejection step, in parallel with the rotation step, since it is closer to the substrate Spraying a chemical liquid from above to spray the chemical liquid against a first liquid contact position in a middle region between a central region and a peripheral region in a rotation track of the substrate; and a second spraying step, the rotation step, and the first A spraying step is performed in parallel, spraying the chemical liquid from above the substrate so that the chemical liquid sprays the second liquid contact position in the intermediate region; and the chemical liquid sprayed in the first spraying step. The ejection direction is the direction in which the medicinal solution is viewed from above in the direction of the rotation axis and contains the following components: along a tangent to the first liquid contact position along a circle centered on the rotation axis and passing through the first liquid contact position And a component facing the upstream side of the rotation direction of the substrate; and along a radial direction of the substrate orthogonal to the tangent line , A component toward the rotation axis from the first liquid contact position. The velocity component in the tangential direction of the ejection speed of the chemical solution ejected in the first ejecting step has the following magnitude: it can overcome the orientation of the chemical solution acting on the first liquid contact position due to the rotation of the substrate toward the substrate The force on the downstream side in the rotation direction causes the chemical solution to flow toward the upstream side in the rotation direction of the substrate. The radial velocity component of the ejection speed has the following magnitude: it can overcome the centrifugal force caused by the rotation of the substrate on the chemical liquid acting on the first liquid contact position, so that the chemical liquid flows toward the rotation axis side . The ejection direction of the medicinal solution ejected in the second ejecting step is viewed from above in the direction of the axis of rotation and contains the following components: along a circle centered on the axis of rotation and passing through the second liquid contact position The component in the tangential direction of the second liquid contact position and toward the downstream side in the rotation direction of the substrate.

第十一態樣之基板處理方法係第十態樣之基板處理方法,且前述第一噴出步驟中噴出之前述藥液之前述第一液體接觸位置、與前述第二噴出步驟中噴出之前述藥液之前述第二液體接觸位置係距前述旋轉軸為相同距離。 The substrate processing method of the eleventh aspect is the substrate processing method of the tenth aspect, and the first liquid contact position of the chemical liquid sprayed in the first spraying step and the drug sprayed in the second spraying step are The second liquid contact position of the liquid is the same distance from the rotation axis.

第十二態樣之基板處理方法係第十態樣之基板處理方法,且藉由前述第一噴出步驟中噴出之前述藥液之前述第一液體接觸位置、與前述基板之周緣中最接近前述第一 液體接觸位置之點的中點來定義關注中點時,前述第二噴出步驟中噴出之前述藥液之前述第二液體接觸位置係較前述第一液體接觸位置更遠離前述旋轉軸,且較前述關注中點更接近前述旋轉軸。 The twelfth aspect of the substrate processing method is the tenth aspect of the substrate processing method, and the closest position between the first liquid contact position of the chemical solution sprayed in the first spraying step and the periphery of the substrate is closest to the aforementioned. When the midpoint of the point of the first liquid contact position is used to define the center of attention, the second liquid contact position of the chemical liquid ejected in the second ejection step is farther from the rotation axis than the first liquid contact position, and It is closer to the aforementioned rotation axis than the aforementioned midpoint of attention.

第十三態樣之基板處理方法係第十態樣至第十二態樣中任一態樣之基板處理方法,且前述第一噴出步驟中噴出之前述藥液之前述第一液體接觸位置、與前述第二噴出步驟中噴出之前述藥液之前述第二液體接觸位置係於形成前述基板之直徑的同一直線上,分別位於將前述旋轉軸夾持於彼此之間的位置。 The substrate processing method of the thirteenth aspect is a substrate processing method of any one of the tenth aspect to the twelfth aspect, and the first liquid contact position of the chemical solution sprayed in the first spraying step, The second liquid contact positions with the chemical liquid ejected in the second ejection step are on the same straight line forming the diameter of the substrate, and are located at positions where the rotation shafts are held between each other.

第十四態樣之基板處理方法係第十態樣至第十二態樣中任一態樣之基板處理方法,且前述第二噴出步驟中噴出之前述藥液之前述第二液體接觸位置係位於前述第一噴出步驟中噴出之前述藥液自前述第一液體接觸位置向周圍擴展而形成於前述基板上的液膜之上。 The fourteenth aspect of the substrate processing method is a substrate processing method of any one of the tenth aspect to the twelfth aspect, and the second liquid contact position of the chemical liquid ejected in the second ejecting step is The medicinal solution ejected in the first ejecting step is expanded from the first liquid contact position to the periphery and is formed on the liquid film on the substrate.

第十五態樣之基板處理方法係具備:旋轉步驟,一邊以大致水平姿勢保持基板一邊使基板以旋轉軸為中心而旋轉;第一噴出步驟,與前述旋轉步驟並行,自較前述基板更靠上方噴出藥液,以使該藥液噴擊前述基板之旋轉軌跡中的中央區域與周邊區域之間的中間區域中之第一液體接觸位置;以及第二噴出步驟,與前述旋轉步驟及前述 第一噴出步驟並行,自較前述基板更靠上方噴出前述藥液,以使該藥液噴擊前述中間區域中之第二液體接觸位置。並且,前述第一噴出步驟係以如下方式噴出前述藥液之步驟:剛噴擊前述第一液體接觸位置後自前述第一液體接觸位置流向前述旋轉軸側的前述藥液之量,多於剛噴擊前述第一液體接觸位置後自前述第一液體接觸位置流向與前述旋轉軸相反之側的前述藥液之量。前述第二噴出步驟中噴出之前述藥液之噴出方向係自上方於前述旋轉軸方向上觀看該藥液而含有以下分量之方向:沿著以前述旋轉軸為中心且通過前述第二液體接觸位置的圓在前述第二液體接觸位置之切線方向,且朝向前述基板之旋轉方向下游側的分量。 A fifteenth aspect of the substrate processing method includes a rotation step of rotating the substrate around a rotation axis while holding the substrate in a substantially horizontal posture; a first ejection step, in parallel with the rotation step, and being closer to the substrate than the substrate Spraying a chemical liquid from above to spray the chemical liquid against a first liquid contact position in a middle region between a central region and a peripheral region in a rotation track of the substrate; and a second spraying step, the rotation step, and the first A spraying step is performed in parallel, and the chemical liquid is sprayed from above the substrate so that the chemical liquid hits the second liquid contact position in the intermediate region. In addition, the first ejecting step is a step of ejecting the chemical liquid in such a manner that the amount of the chemical liquid flowing from the first liquid contact position to the rotation axis side immediately after the first liquid contact position is sprayed is more than that The amount of the chemical solution flowing from the first liquid contact position to the side opposite to the rotation axis after the first liquid contact position is sprayed. The ejection direction of the medicinal solution ejected in the second ejection step is a direction in which the medicinal solution is viewed from above in the direction of the rotation axis and contains the following components: along the center of the rotation axis and passing through the second liquid contact position The component of the circle in the tangential direction of the second liquid contact position and toward the downstream side of the rotation direction of the substrate.

第十六態樣之基板處理方法係第十態樣或第十五態樣之基板處理方法,且前述第二噴出步驟中噴出之前述藥液之流量多於前述噴出步驟中噴出之前述藥液之流量。 The sixteenth aspect of the substrate processing method is the tenth aspect or the fifteenth aspect of the substrate processing method, and the flow rate of the chemical solution sprayed in the second spraying step is greater than that of the chemical solution sprayed in the spraying step. Of traffic.

第十七態樣之基板處理方法係第十態樣或第十五態樣之基板處理方法,且前述第二噴出步驟中噴出之前述藥液之噴出方向係自上方於前述旋轉軸方向上觀看該藥液而含有以下分量之方向:沿著以前述旋轉軸為中心且通過前述第二液體接觸位置的圓在前述第二液體接觸位置之切線方向,且朝向前述基板之旋轉方向下游側的分量;以 及沿著與該切線正交的前述基板之徑向,自前述第二液體接觸位置朝向與前述旋轉軸相反之側的分量。 The substrate processing method of the seventeenth aspect is the substrate processing method of the tenth aspect or the fifteenth aspect, and the ejection direction of the chemical solution ejected in the second ejection step is viewed from above in the direction of the rotation axis. This medicinal solution contains a component along the tangential direction of the circle passing through the second liquid contact position centered on the rotation axis and passing through the second liquid contact position, and toward the downstream side of the rotation direction of the substrate. And a component along the radial direction of the substrate orthogonal to the tangent line from the second liquid contact position toward the side opposite to the rotation axis.

第十八態樣之基板處理方法係第十態樣或第十五態樣之基板處理方法,且關於前述第一噴出步驟及前述第二噴出步驟之各噴出步驟中噴出前述藥液時之各噴出方向,自相對於前述各噴出步驟中噴出之各藥液而與前述旋轉軸為相反之側於前述基板之徑向上觀看前述各藥液,前述各噴出方向係自前述基板之上方朝向傾斜向下的方向。 The eighteenth aspect of the substrate processing method is the tenth aspect or the fifteenth aspect of the substrate processing method, and each of the aforementioned first ejection step and the aforementioned second ejection step is ejected in each ejection step when the aforementioned chemical solution is ejected. The ejection directions are viewed in a radial direction of the substrate from a side opposite to the rotation axis with respect to each of the chemical liquids ejected in each of the ejection steps, and the ejection directions are obliquely directed from above the substrate. Down direction.

根據第一態樣之發明,自第一噴嘴噴出之藥液之至少一部分於剛噴擊第一液體接觸位置後,克服作用於該藥液的朝向基板之旋轉方向下游側的力與離心力此兩種力,自第一液體接觸位置一邊擴展成液膜狀一邊向基板之旋轉方向上游側且旋轉軸側流動,然後通過基板之中央區域而到達基板之周緣。藉此,對第一液體接觸位置供給多量之藥液,且對基板之中央部分之各位置供給較第一液體接觸位置更為少量之藥液。基板之各部位的周方向上之轉速係自旋轉軸朝向基板之周緣而增加。另外,供給於基板之各位置的藥液係隨著各位置的周方向上之轉速增加而於周方向上被拉伸,膜厚減小。因此,雖對第一液體接觸位置供給較基板之中央區域更為多量之藥液,但該藥液之膜厚容易變得較基板之中央區域更薄,另一方面,雖對基板之 中央區域供給較第一液體接觸位置更為少量之藥液,但該藥液之膜厚不易變得較第一液體接觸位置薄。因此,可藉由第一噴嘴而提高基板表面中較第一液體接觸位置更靠基板中心側之部分中的藥液之膜厚之均勻性。另外,自第二噴嘴噴出之藥液大部分自第二液體接觸位置一邊擴展成液膜狀,一邊於基板之周邊區域中向基板之旋轉方向下游側流動並且到達基板之周緣部。因此,可藉由第一噴嘴及第二噴嘴對基板之整個表面供給藥液,並且可藉由第一噴嘴而提高供給於較第一液體接觸位置更靠旋轉軸側部分、亦即基板之中央區域及基板之中間區域中較第一液體接觸位置更靠旋轉軸側部分的藥液之膜厚之均勻性。 According to the invention of the first aspect, at least a portion of the medicinal solution sprayed from the first nozzle immediately after the first liquid contact position is sprayed, overcomes both the force acting on the medicinal solution toward the downstream side of the substrate in the direction of rotation and the centrifugal force. This kind of force flows from the first liquid contact position to a liquid film-like side while flowing toward the upstream side and the rotation axis side of the substrate in the direction of rotation, and then passes through the central region of the substrate to reach the peripheral edge of the substrate. Thereby, a large amount of chemical liquid is supplied to the first liquid contact position, and a smaller amount of chemical liquid is supplied to each position of the central portion of the substrate than the first liquid contact position. The rotation speed in the circumferential direction of each part of the substrate increases from the rotation axis toward the peripheral edge of the substrate. In addition, the chemical solution supplied to each position of the substrate is stretched in the circumferential direction as the rotation speed in the circumferential direction of each position is increased, and the film thickness is reduced. Therefore, although a greater amount of chemical solution is supplied to the first liquid contact position than the central region of the substrate, the film thickness of the chemical solution is likely to be thinner than the central region of the substrate. A smaller amount of chemical liquid is supplied than the first liquid contact position, but the film thickness of the chemical liquid is less likely to become thinner than the first liquid contact position. Therefore, the uniformity of the film thickness of the chemical liquid in the portion of the substrate surface closer to the center side of the substrate than the first liquid contact position can be improved by the first nozzle. In addition, most of the chemical liquid ejected from the second nozzle expands into a liquid film shape from the second liquid contact position, and flows toward the downstream side of the rotation direction of the substrate in the peripheral region of the substrate and reaches the peripheral edge portion of the substrate. Therefore, the first nozzle and the second nozzle can be used to supply the entire surface of the substrate, and the first nozzle can be used to increase the supply to the portion closer to the rotation axis side than the first liquid contact position, that is, the center of the substrate. The uniformity of the film thickness of the chemical solution in the region and the intermediate region of the substrate closer to the rotation axis side than the first liquid contact position.

根據第二態樣之發明,第一噴嘴噴出之藥液之第一液體接觸位置、與第二噴嘴噴出之藥液之第二液體接觸位置係距旋轉軸為相同距離。因此,更容易將自兩個噴嘴分別噴出之藥液供給於基板之整個表面。 According to the invention of the second aspect, the first liquid contact position of the chemical liquid ejected by the first nozzle and the second liquid contact position of the chemical liquid ejected by the second nozzle are the same distance from the rotation axis. Therefore, it is easier to supply the chemical liquid discharged from the two nozzles to the entire surface of the substrate.

根據第四態樣之發明,第一噴嘴噴出之藥液之第一液體接觸位置、與第二噴嘴噴出之藥液之第二液體接觸位置係於形成基板之直徑的同一直線上,分別位於將旋轉軸夾持於彼此之間的位置。因此,例如於自基板之上方觀看,在兩個噴嘴噴出之藥液係相互平行且向相同方向噴出之情形下,可將第二噴嘴噴出之藥液之噴出方向設定為自基 板之上方觀看不具有朝向基板中心側的分量之方向。因此,可自第二噴嘴對基板之周邊區域有效率地供給藥液。 According to the invention of the fourth aspect, the first liquid contact position of the chemical liquid ejected by the first nozzle and the second liquid contact position of the chemical liquid ejected by the second nozzle are on the same straight line forming the diameter of the substrate, and are respectively located on the The rotation shafts are clamped between each other. Therefore, for example, when viewed from above the substrate, in the case where the chemical liquids ejected from the two nozzles are parallel to each other and ejected in the same direction, the ejection direction of the chemical liquid ejected from the second nozzle can be set to be not viewed from above the substrate. There is a direction of the component toward the center side of the substrate. Therefore, the chemical liquid can be efficiently supplied to the peripheral region of the substrate from the second nozzle.

根據第五態樣之發明,第二噴嘴噴出之藥液之第二液體接觸位置係位於第一噴嘴噴出之藥液自第一液體接觸位置向周圍擴展而形成於基板上的液膜之上。藉此,與第二液體接觸位置位於基板上自第一噴嘴噴出之藥液形成的液膜以外之部分之情形時,可減少自第二噴嘴噴出之藥液之濺液。 According to the fifth aspect of the invention, the second liquid contact position of the chemical liquid ejected from the second nozzle is located on the liquid film on the substrate, the chemical liquid ejected from the first nozzle spreads from the first liquid contact position to the surroundings. Therefore, when the contact position with the second liquid is located on the substrate other than the liquid film formed by the chemical liquid ejected from the first nozzle, the splash of the chemical liquid ejected from the second nozzle can be reduced.

根據第六態樣之發明,自第一噴嘴噴出之藥液更容易自第一液體接觸位置一邊擴展成液膜狀一邊朝向基板之中心流動,進而到達相對於基板中心與第一液體接觸位置為相反側的基板之周緣。藉此,對第一液體接觸位置供給多量之藥液,且對基板之中央部分之各位置供給較第一液體接觸位置更為少量之藥液。基板之各部位的周方向上之轉速係自旋轉軸朝向基板之周緣而增加。另外,供給於基板之各位置的藥液係隨著各位置的周方向上之轉速增加而於周方向上被拉伸,膜厚減小。因此,雖對第一液體接觸位置供給較基板之中央區域更為多量之藥液,但該藥液之膜厚容易變得較基板之中央區域更薄,另一方面,雖對基板之中央區域供給較第一液體接觸位置更為少量之藥液,但該藥液之膜厚不易變得較第一液體接觸位置薄。因此,可藉由第一噴嘴而提高基板表面中較第一液體接觸位 置更靠基板中心側之部分中的藥液之膜厚之均勻性。另外,自第二噴嘴噴出之藥液之一部分係自第二液體接觸位置一邊擴展成液膜狀,一邊於基板之周邊區域中向基板之旋轉方向下游側流動並且到達基板之周緣部。因此,可藉由第一噴嘴及第二噴嘴對基板之整個表面供給藥液,並且藉由第一噴嘴而提高供給於較第一液體接觸位置更靠旋轉軸側部分、亦即基板之中央區域及基板之中間區域中較第一液體接觸位置更靠旋轉軸側部分的藥液之膜厚之均勻性。 According to the invention of the sixth aspect, the chemical liquid sprayed from the first nozzle is more likely to flow from the first liquid contact position to the center of the substrate while expanding into a liquid film shape, and then reaching the first liquid contact position relative to the center of the substrate. The periphery of the substrate on the opposite side. Thereby, a large amount of chemical liquid is supplied to the first liquid contact position, and a smaller amount of chemical liquid is supplied to each position of the central portion of the substrate than the first liquid contact position. The rotation speed in the circumferential direction of each part of the substrate increases from the rotation axis toward the peripheral edge of the substrate. In addition, the chemical solution supplied to each position of the substrate is stretched in the circumferential direction as the rotation speed in the circumferential direction of each position is increased, and the film thickness is reduced. Therefore, although a greater amount of chemical solution is supplied to the first liquid contact position than the central region of the substrate, the film thickness of the chemical solution is likely to be thinner than the central region of the substrate. A smaller amount of chemical liquid is supplied than the first liquid contact position, but the film thickness of the chemical liquid is less likely to become thinner than the first liquid contact position. Therefore, the uniformity of the film thickness of the chemical solution in the portion of the substrate surface closer to the center side of the substrate than the first liquid contact position can be improved by the first nozzle. In addition, a part of the chemical liquid ejected from the second nozzle spreads into a liquid film shape from the second liquid contacting position, flows in the peripheral region of the substrate toward the downstream side in the rotation direction of the substrate, and reaches the peripheral edge portion of the substrate. Therefore, the entire surface of the substrate can be supplied with the first nozzle and the second nozzle, and the first nozzle can be used to increase the supply to the portion closer to the rotation axis side than the first liquid contact position, that is, the central region of the substrate. And the uniformity of the film thickness of the chemical liquid in the middle region of the substrate closer to the rotation axis side than the first liquid contact position.

根據第七態樣之發明,第二噴嘴噴出之藥液之流量多於第一噴嘴噴出之藥液之流量,故可自第二噴嘴對基板之周邊區域供給更多之藥液。 According to the seventh aspect of the invention, the flow rate of the chemical liquid ejected from the second nozzle is greater than the flow rate of the chemical liquid ejected from the first nozzle, so that more chemical liquid can be supplied from the second nozzle to the peripheral area of the substrate.

根據第八態樣之發明,自第二噴嘴之上方於基板之旋轉軸方向上觀看,第二噴嘴噴出藥液時之噴出方向係含有以下分量之方向:沿著以旋轉軸為中心且通過第二液體接觸位置的圓在第二液體接觸位置之切線方向,且朝向基板之旋轉方向下游側的分量;以及沿著與該切線正交的基板之徑向,自第二液體接觸位置朝向與旋轉軸相反之側的分量。因此,可自第二噴嘴對基板之周邊區域有效率地供給藥液。 According to the eighth aspect of the invention, viewed from above the second nozzle in the direction of the rotation axis of the substrate, the discharge direction when the second nozzle ejects the chemical liquid is a direction containing the following components: along the center of the rotation axis and passing through the first The component of the circle at the second liquid contact position in the tangential direction of the second liquid contact position and toward the downstream side of the rotation direction of the substrate; and along the radial direction of the substrate orthogonal to the tangent line, the direction and rotation from the second liquid contact position Components on opposite sides of the axis. Therefore, the chemical liquid can be efficiently supplied to the peripheral region of the substrate from the second nozzle.

根據第九態樣之發明,關於第一噴嘴及第二噴嘴之各噴嘴噴出藥液時之各噴出方向,自相對於各噴嘴而與旋轉軸為相反側之各位置於基板之徑向上觀看,上述各噴出方向係自基板之上方朝向傾斜向下之方向。第一噴嘴、第二噴嘴可朝向第一液體接觸位置、第二液體接觸位置更準確地噴出藥液。 According to the ninth aspect of the invention, regarding the respective ejection directions when each of the first nozzle and the second nozzle ejects the medicinal solution, each of the ejection directions of the first nozzle and the second nozzle is viewed in the radial direction of the substrate from the side opposite to the rotation axis of the nozzle. Each of the above ejection directions is an oblique downward direction from above the substrate. The first nozzle and the second nozzle can eject the medicinal liquid more accurately toward the first liquid contact position and the second liquid contact position.

根據第十態樣之發明,第一噴出步驟中噴出之藥液之至少一部分係於剛噴觸第一液體接觸位置後,克服作用於該藥液的朝向基板之旋轉方向下游側的力與離心力此兩種力,自第一液體接觸位置一邊擴展成液膜狀一邊向基板之旋轉方向上游側且旋轉軸側流動,然後通過基板之中央區域而到達基板之周緣。藉此,對第一液體接觸位置供給多量之藥液,且對基板之中央部分之各位置供給較第一液體接觸位置更為少量之藥液。基板之各部位的周方向上之轉速係自旋轉軸朝向基板之周緣而增加。另外,供給於基板之各位置的藥液係隨著各位置的周方向上之轉速增加而於周方向上被拉伸,膜厚減小。因此,雖對第一液體接觸位置供給較基板之中央區域更為多量之藥液,但該藥液之膜厚容易變得較基板之中央區域更薄,另一方面,雖對基板之中央區域供給較第一液體接觸位置更為少量之藥液,但該藥液之膜厚不易變得較第一液體接觸位置薄。因此,可藉由第一噴出步驟而提高基板表面中較第一液體接觸位置更靠基板中心側之部分中的藥液之膜厚之均勻 性。另外,第二噴出步驟中噴出之藥液大部分自第二液體接觸位置一邊擴展成液膜狀,一邊於基板之周邊區域中向基板之旋轉方向下游側流動並且到達基板之周緣部。因此,可藉由第一噴出步驟及第二噴出步驟對基板之整個表面供給藥液,並且可藉由第一噴出步驟而提高供給於較第一液體接觸位置更靠旋轉軸側部分、亦即基板之中央區域及基板之中間區域中較第一液體接觸位置更靠旋轉軸側部分的藥液之膜厚之均勻性。 According to the tenth aspect of the invention, at least a portion of the chemical liquid ejected in the first ejection step is immediately after the first liquid contacting position is contacted, and the force and the centrifugal force acting on the downstream side of the chemical liquid toward the substrate in the rotation direction are overcome. These two forces flow from the first liquid contact position into a liquid film while flowing toward the upstream side and the rotation axis side of the substrate, and then pass through the central region of the substrate to reach the peripheral edge of the substrate. Thereby, a large amount of chemical liquid is supplied to the first liquid contact position, and a smaller amount of chemical liquid is supplied to each position of the central portion of the substrate than the first liquid contact position. The rotation speed in the circumferential direction of each part of the substrate increases from the rotation axis toward the peripheral edge of the substrate. In addition, the chemical solution supplied to each position of the substrate is stretched in the circumferential direction as the rotation speed in the circumferential direction of each position is increased, and the film thickness is reduced. Therefore, although a greater amount of chemical solution is supplied to the first liquid contact position than the central region of the substrate, the film thickness of the chemical solution is likely to be thinner than the central region of the substrate. A smaller amount of chemical liquid is supplied than the first liquid contact position, but the film thickness of the chemical liquid is less likely to become thinner than the first liquid contact position. Therefore, the uniformity of the film thickness of the chemical liquid in the portion of the substrate surface closer to the center side of the substrate than the first liquid contact position can be improved by the first ejection step. In addition, most of the chemical liquid ejected in the second ejection step expands into a liquid film shape from the second liquid contact position, and flows toward the downstream side of the rotation direction of the substrate in the peripheral region of the substrate and reaches the peripheral edge portion of the substrate. Therefore, the chemical solution can be supplied to the entire surface of the substrate by the first ejection step and the second ejection step, and the supply can be increased by the first ejection step to the portion closer to the rotation axis side than the first liquid contact position, that is, The uniformity of the film thickness of the chemical solution in the central region and the intermediate region of the substrate closer to the rotation axis side than the first liquid contact position.

根據第十五態樣之發明,第一噴出步驟中噴出之藥液更容易自第一液體接觸位置一邊擴展成液膜狀一邊朝向基板之中心流動,進而到達相對於基板中心而與第一液體接觸位置為相反側的基板之周緣。藉此,對第一液體接觸位置供給多量之藥液,且對基板之中央部分之各位置供給較第一液體接觸位置更為少量之藥液。基板之各部位的周方向上之轉速係自旋轉軸朝向基板之周緣而增加。另外,供給於基板之各位置的藥液係隨著各位置的周方向上之轉速增加而於周方向上被拉伸,膜厚減小。因此,雖對第一液體接觸位置供給較基板之中央區域更為多量之藥液,但該藥液之膜厚容易變得較基板之中央區域更薄,另一方面,雖對基板之中央區域供給較第一液體接觸位置更為少量之藥液,但該藥液之膜厚不易變得較第一液體接觸位置薄。因此,可藉由第一噴出步驟而提高基板表面中較第一液體接觸位置更靠基板中心側之部分中的藥液之膜 厚之均勻性。另外,第二噴出步驟中噴出之藥液之一部分自第二液體接觸位置一邊擴展成液膜狀,一邊於基板之周邊區域中向基板之旋轉方向下游側流動並且到達基板之周緣部。因此,可藉由第一噴出步驟及第二噴出步驟對基板之整個表面供給藥液,並且藉由第一噴出步驟而提高供給於較第一液體接觸位置更靠旋轉軸側部分、亦即基板之中央區域及基板之中間區域中較第一液體接觸位置更靠旋轉軸側部分的藥液之膜厚之均勻性。 According to the invention of the fifteenth aspect, the chemical liquid ejected in the first ejecting step is easier to expand from the first liquid contact position to a liquid film while flowing toward the center of the substrate, and then reaches the first liquid relative to the center of the substrate. The contact position is the peripheral edge of the substrate on the opposite side. Thereby, a large amount of chemical liquid is supplied to the first liquid contact position, and a smaller amount of chemical liquid is supplied to each position of the central portion of the substrate than the first liquid contact position. The rotation speed in the circumferential direction of each part of the substrate increases from the rotation axis toward the peripheral edge of the substrate. In addition, the chemical solution supplied to each position of the substrate is stretched in the circumferential direction as the rotation speed in the circumferential direction of each position is increased, and the film thickness is reduced. Therefore, although a greater amount of chemical solution is supplied to the first liquid contact position than the central region of the substrate, the film thickness of the chemical solution is likely to be thinner than the central region of the substrate. A smaller amount of chemical liquid is supplied than the first liquid contact position, but the film thickness of the chemical liquid is less likely to become thinner than the first liquid contact position. Therefore, the uniformity of the film thickness of the chemical liquid in the portion of the substrate surface closer to the center side of the substrate than the first liquid contact position can be improved by the first ejection step. In addition, a part of the medicinal solution ejected in the second ejection step expands into a liquid film shape from the second liquid contact position, flows in the peripheral region of the substrate toward the downstream side in the rotation direction of the substrate, and reaches the peripheral edge portion of the substrate. Therefore, the chemical solution can be supplied to the entire surface of the substrate through the first ejection step and the second ejection step, and the supply can be increased to the portion closer to the rotation axis side than the first liquid contact position, that is, the substrate, by the first ejection step. The uniformity of the film thickness of the chemical solution in the central region and the intermediate region of the substrate closer to the rotation axis side than the first liquid contact position.

1‧‧‧基板處理裝置 1‧‧‧ substrate processing device

2‧‧‧旋轉保持機構 2‧‧‧rotation holding mechanism

5‧‧‧處理部 5‧‧‧ Processing Department

9‧‧‧基板 9‧‧‧ substrate

21‧‧‧旋轉夾盤 21‧‧‧Rotary Chuck

22‧‧‧旋轉軸部 22‧‧‧Rotating shaft

23‧‧‧旋轉驅動部 23‧‧‧Rotary drive unit

51‧‧‧噴嘴(第一噴嘴) 51‧‧‧Nozzle (first nozzle)

52‧‧‧噴嘴(第二噴嘴) 52‧‧‧Nozzle (second nozzle)

53‧‧‧藥液供給部 53‧‧‧Medicine Supply Department

130‧‧‧控制部 130‧‧‧Control Department

201、202‧‧‧假想圓 201, 202‧‧‧imaginary circle

231‧‧‧旋轉機構 231‧‧‧rotating mechanism

521、522‧‧‧開閉閥 521, 522‧‧‧ On-off valve

531、532‧‧‧藥液供給源 531, 532‧‧‧medicine supply source

541、542‧‧‧配管 541, 542‧‧‧Piping

AR1‧‧‧箭頭 AR1‧‧‧Arrow

K1‧‧‧中央區域 K1‧‧‧ central area

K2‧‧‧中間區域 K2‧‧‧ middle area

K3‧‧‧周邊區域 K3‧‧‧surrounding area

L1、L2‧‧‧藥液 L1, L2‧‧‧‧ Liquid

P1‧‧‧液體接觸位置(第一液體接觸位置) P1‧‧‧Liquid contact position (first liquid contact position)

P2‧‧‧液體接觸位置(第二液體接觸位置) P2‧‧‧Liquid contact position (second liquid contact position)

S10、S20、S30、S40、S50‧‧‧步驟 S10, S20, S30, S40, S50 ‧‧‧ steps

a1‧‧‧旋轉軸 a1‧‧‧rotation axis

c1‧‧‧中心 c1‧‧‧ center

u1、v1‧‧‧噴出方向 u1, v1‧‧‧ejection direction

u2、u3、v2、v3‧‧‧分量 u2, u3, v2, v3‧‧‧components

圖1係用以說明實施形態之基板處理裝置之構成例的側視示意圖。 FIG. 1 is a schematic side view illustrating a configuration example of a substrate processing apparatus according to an embodiment.

圖2係用以說明圖1之基板處理裝置之構成例的俯視示意圖。 FIG. 2 is a schematic plan view for explaining a configuration example of the substrate processing apparatus of FIG. 1.

圖3係用以說明基板之上表面之中間區域之一例的圖。 FIG. 3 is a diagram for explaining an example of an intermediate region on the upper surface of the substrate.

圖4係表示噴出至基板上的藥液之流動之一例的圖。 FIG. 4 is a diagram showing an example of a flow of a chemical solution ejected onto a substrate.

圖5係以圖表形式表示基板之半徑與熱損耗的關係之一例的圖。 FIG. 5 is a diagram showing an example of the relationship between the radius of the substrate and the heat loss in a graph format.

圖6係以圖表形式表示藥液之噴出態樣與基板之溫度分佈的關係之一例的圖。 FIG. 6 is a diagram showing an example of the relationship between the ejection state of the chemical solution and the temperature distribution of the substrate in a graph format.

圖7係表示兩個噴嘴之配置之另一例的俯視示意圖。 FIG. 7 is a schematic plan view showing another example of the arrangement of two nozzles.

圖8係表示兩個噴嘴之配置之另一例的俯視示意圖。 FIG. 8 is a schematic plan view showing another example of the arrangement of two nozzles.

圖9係表示兩個噴嘴之配置之另一例的俯視示意圖。 FIG. 9 is a schematic plan view showing another example of the arrangement of two nozzles.

圖10係以圖表形式表示兩個噴嘴噴出之藥液於基板之徑向上的膜厚分佈之一例的圖。 FIG. 10 is a diagram showing an example of a film thickness distribution of the chemical liquid discharged from the two nozzles in the radial direction of the substrate in a graph form.

圖11係表示實施形態之基板處理裝置之動作之一例的流程圖。 FIG. 11 is a flowchart showing an example of the operation of the substrate processing apparatus according to the embodiment.

以下,一邊參照圖式一邊對實施形態加以說明。以下之實施形態係將本發明具體化之一例,並非限定本發明之技術範圍之事例。另外,以下參照之各圖中,有時為了使理解容易而將各部之尺寸或數量誇張或簡化而圖示。上下方向為鉛垂方向,相對於旋轉夾盤而基板側為上。 Hereinafter, embodiments will be described with reference to the drawings. The following embodiment is an example embodying the present invention, and does not limit the technical scope of the present invention. In addition, in each of the drawings referred to below, the size or number of each part may be exaggerated or simplified in order to facilitate understanding. The vertical direction is a vertical direction, and the substrate side is up with respect to the spin chuck.

(實施形態) (Implementation form)

(1.基板處理裝置1之總體構成) (1. Overall configuration of the substrate processing apparatus 1)

一邊參照圖1、圖2一邊對基板處理裝置1之構成進行說明。圖1、圖2為用以說明實施形態之基板處理裝置1之構成的圖。圖1為基板處理裝置1之側視示意圖,圖2為基板處理裝置1之俯視示意圖。 The configuration of the substrate processing apparatus 1 will be described with reference to FIGS. 1 and 2. 1 and 2 are diagrams for explaining the structure of the substrate processing apparatus 1 according to the embodiment. FIG. 1 is a schematic side view of the substrate processing apparatus 1, and FIG. 2 is a schematic top view of the substrate processing apparatus 1.

於圖1、圖2中,顯示於將噴嘴51、52配置於基板9之上方之處理位置的狀態下,藉由旋轉夾盤21使基板9繞旋轉軸a1向預定之旋轉方向(箭頭AR1之方向)旋轉的狀態。噴嘴51(52)將液柱狀之藥液L1(L2)噴出至基板9 之上表面。於圖2中,省略基板處理裝置1之構成要素中控制部130等一部分構成要素之記載。 In FIGS. 1 and 2, in a state where the nozzles 51 and 52 are disposed at a processing position above the substrate 9, the substrate 9 is rotated around the rotation axis a1 by a rotating chuck 21 to a predetermined rotation direction (arrow AR1). Direction). The nozzle 51 (52) sprays a liquid columnar chemical liquid L1 (L2) onto the upper surface of the substrate 9. In FIG. 2, the description of some constituent elements such as the control unit 130 among the constituent elements of the substrate processing apparatus 1 is omitted.

基板9之表面形狀為大致圓形。基板9向基板處理裝置1內之搬入搬出係於藉由未圖示之噴嘴移動機構將噴嘴51、52配置於避讓位置之狀態下,藉由機器人等而進行。搬入至基板處理裝置1之基板9係藉由旋轉夾盤21而裝卸自如地保持。 The surface shape of the substrate 9 is substantially circular. The loading and unloading of the substrate 9 into the substrate processing apparatus 1 is performed by a robot or the like in a state where the nozzles 51 and 52 are arranged in an avoiding position by a nozzle moving mechanism (not shown). The substrate 9 carried into the substrate processing apparatus 1 is detachably held by rotating the chuck 21.

基板處理裝置1具備旋轉保持機構2、處理部5及控制部130。該等各旋轉保持機構2、處理部5係與控制部130電性連接,根據來自控制部130之指示而動作。作為控制部130,例如可採用與通常之電腦相同者。亦即,控制部130例如具備進行各種運算處理之CPU(Central Processing Unit;中央處理單元)、記憶基本程式之作為讀取專用之記憶體的ROM(Read Only Memory;唯讀記憶體)、記憶各種資訊之作為讀寫自如之記憶體的RAM(Random Access Memory;隨機存取記憶體)、預先記憶有控制用軟體或資料等之磁碟等。控制部130中,作為主控制部之CPU依照程式中記述之順序進行運算處理,藉此控制基板處理裝置1之各部。 The substrate processing apparatus 1 includes a rotation holding mechanism 2, a processing unit 5, and a control unit 130. Each of the rotation holding mechanisms 2 and the processing unit 5 is electrically connected to the control unit 130 and operates according to an instruction from the control unit 130. As the control unit 130, for example, it may be the same as a general computer. That is, the control unit 130 includes, for example, a CPU (Central Processing Unit) that performs various arithmetic processing, a ROM (Read Only Memory) that stores basic programs as a read-only memory, and stores various types of memory. The information is RAM (Random Access Memory), which is a readable and writable memory, and a magnetic disk in which control software or data is stored in advance. In the control unit 130, a CPU, which is a main control unit, performs arithmetic processing in the order described in the program, thereby controlling each unit of the substrate processing apparatus 1.

(2.基板9) (2.Substrate 9)

被基板處理裝置1視為處理對象之基板9之表面形狀為大致圓形。基板9之半徑例如為150mm。基板處理裝置1自噴嘴51、52對基板9之上表面供給處理液而進行基板9之處理。 The surface shape of the substrate 9 regarded as a processing target by the substrate processing apparatus 1 is substantially circular. The radius of the substrate 9 is, for example, 150 mm. The substrate processing apparatus 1 supplies a processing liquid to the upper surface of the substrate 9 from the nozzles 51 and 52 to process the substrate 9.

圖3係用以說明基板9之上表面之中間區域K2之一例的圖。中間區域K2為基板9之旋轉軌跡中的中央區域K1與周邊區域K3之間的區域。自基板9之中心c1至中央區域K1與中間區域K2之邊界為止的長度例如為基板9之半徑的三分之一。另外,周邊區域K3之寬度、即自中間區域K2與周邊區域K3之邊界至基板9之周緣為止的長度例如為基板9之半徑的三分之一。因此,於該情形中,中間區域K2之寬度、即自中央區域K1與中間區域K2之邊界至中間區域K2與周邊區域K3之邊界為止的長度為基板9之半徑的三分之一。 FIG. 3 is a diagram for explaining an example of the intermediate region K2 on the upper surface of the substrate 9. The intermediate region K2 is a region between the central region K1 and the peripheral region K3 in the rotation track of the substrate 9. The length from the center c1 of the substrate 9 to the boundary between the central region K1 and the intermediate region K2 is, for example, a third of the radius of the substrate 9. The width of the peripheral region K3, that is, the length from the boundary between the intermediate region K2 and the peripheral region K3 to the periphery of the substrate 9 is, for example, one third of the radius of the substrate 9. Therefore, in this case, the width of the intermediate region K2, that is, the length from the boundary between the central region K1 and the intermediate region K2 to the boundary between the intermediate region K2 and the peripheral region K3 is one third of the radius of the substrate 9.

(3.基板處理裝置1之各部之構成) (3. Configuration of each section of the substrate processing apparatus 1)

(旋轉保持機構2) (Rotary holding mechanism 2)

旋轉保持機構2為可於使基板9之一個主面朝向上方的狀態下,將上述基板9一邊保持於大致水平姿勢一邊旋轉的機構。旋轉保持機構2使基板9以通過主面之中心c1的鉛垂之旋轉軸a1為中心而旋轉。於旋轉保持機構2之噴嘴51、52噴出藥液L1、L2時,例如使基板9以200rpm至400rpm之轉速旋轉。 The rotation holding mechanism 2 is a mechanism capable of rotating the substrate 9 while holding the main surface of the substrate 9 upward, while holding the substrate 9 in a substantially horizontal posture. The rotation holding mechanism 2 rotates the substrate 9 about the vertical rotation axis a1 passing through the center c1 of the main surface. When the nozzles 51 and 52 of the rotation holding mechanism 2 eject the chemical liquids L1 and L2, for example, the substrate 9 is rotated at a rotation speed of 200 rpm to 400 rpm.

旋轉保持機構2具備作為小於基板9之圓板狀構件的旋轉夾盤(「保持構件」、「基板保持部」)21。旋轉夾盤21係以該旋轉夾盤21之上表面成為大致水平,且該旋轉夾盤21之中心軸與旋轉軸a1一致之方式設置。於旋轉夾盤21之下表面連結有圓筒狀之旋轉軸部22。旋轉軸部22係以使該旋轉軸部22之軸線沿著鉛垂方向般之姿勢而配置。旋轉軸部22之軸線與旋轉軸a1一致。另外,於旋轉軸部22連接有旋轉驅動部(例如伺服馬達)23。旋轉驅動部23繞旋轉軸部22之軸線而將該旋轉軸部22旋轉驅動。因此,旋轉夾盤21可與旋轉軸部22一併以旋轉軸a1為中心而旋轉。旋轉驅動部23與旋轉軸部22為使旋轉夾盤21以旋轉軸a1為中心而旋轉之旋轉機構231。旋轉軸部22及旋轉驅動部23係收容於未圖示之筒狀之罩殼內。 The rotation holding mechanism 2 includes a rotation chuck (“holding member”, “substrate holding portion”) 21 as a disc-shaped member smaller than the substrate 9. The spin chuck 21 is provided so that the upper surface of the spin chuck 21 becomes substantially horizontal, and the center axis of the spin chuck 21 is aligned with the rotation axis a1. A cylindrical rotating shaft portion 22 is connected to the lower surface of the rotating chuck 21. The rotation shaft portion 22 is arranged in a posture such that the axis of the rotation shaft portion 22 is along the vertical direction. The axis of the rotation shaft portion 22 coincides with the rotation shaft a1. In addition, a rotation driving unit (for example, a servo motor) 23 is connected to the rotation shaft portion 22. The rotation driving portion 23 rotates and drives the rotation shaft portion 22 around the axis of the rotation shaft portion 22. Therefore, the rotary chuck 21 can be rotated around the rotary shaft a1 together with the rotary shaft portion 22. The rotation driving section 23 and the rotation shaft section 22 are a rotation mechanism 231 that rotates the rotation chuck 21 around the rotation shaft a1. The rotation shaft portion 22 and the rotation driving portion 23 are housed in a cylindrical casing (not shown).

於旋轉夾盤21之中央部設有省略圖示之貫通孔,與旋轉軸部22之內部空間連通。於內部空間,經由省略圖示之配管、開閉閥而連接有省略圖示之泵。該泵、開閉閥係電性連接於控制部130。控制部130控制該泵、開閉閥之動作。該泵可依照控制部130之控制而選擇性地供給負壓與正壓。若於將基板9以大致水平姿勢置於旋轉夾盤21之上表面的狀態下泵供給負壓,則旋轉夾盤21自下方 吸附保持基板9。若泵供給正壓,則基板9可自旋轉夾盤21之上表面取下。 A through hole (not shown) is provided in the central portion of the rotary chuck 21 and communicates with the internal space of the rotary shaft portion 22. A pump (not shown) is connected to the internal space via a pipe (not shown) and an on-off valve. The pump and the on-off valve are electrically connected to the control unit 130. The control unit 130 controls operations of the pump and the on-off valve. The pump can selectively supply a negative pressure and a positive pressure in accordance with the control of the control unit 130. When the substrate 9 is placed on the upper surface of the spin chuck 21 in a substantially horizontal posture, a negative pressure is supplied by the pump, and the spin chuck 21 sucks and holds the substrate 9 from below. If the pump supplies positive pressure, the substrate 9 can be removed from the upper surface of the spin chuck 21.

於該構成中,若於旋轉夾盤21吸附保持有基板9之狀態下旋轉驅動部23將旋轉軸部22旋轉,則使旋轉夾盤21繞沿著鉛垂方向之軸線而旋轉。藉此,使經保持於旋轉夾盤21上之基板9以通過該基板9面內之中心c1的鉛垂之旋轉軸a1為中心向箭頭AR1方向旋轉。作為旋轉夾盤21,亦可採用自以旋轉軸a1為中心而旋轉的圓板狀旋轉基部(spin base)之周緣部豎立設置有用以握持基板9之周緣部的多個(3個以上)夾盤銷者。 In this configuration, when the rotation driving portion 23 rotates the rotation shaft portion 22 while the rotation chuck 21 holds and holds the substrate 9, the rotation chuck 21 is rotated around an axis along the vertical direction. Thereby, the substrate 9 held on the rotary chuck 21 is rotated in the direction of the arrow AR1 with the vertical rotation axis a1 passing through the center c1 in the plane of the substrate 9 as a center. As the rotation chuck 21, a plurality of (3 or more) peripheral edges of a disc-shaped spin base that rotates around the rotation axis a1 may be used to hold the peripheral edge of the substrate 9. Chuck pinner.

(處理部5) (Processing Section 5)

處理部(「藥液供給機構」)5對經保持於旋轉夾盤21上之基板9進行處理。具體而言,處理部5對經保持於旋轉夾盤21上之基板9之上表面供給藥液。處理部5具備噴嘴51、52及藥液供給部53。 The processing unit ("medicine supply mechanism") 5 processes the substrate 9 held on the spin chuck 21. Specifically, the processing unit 5 supplies a chemical solution to the upper surface of the substrate 9 held on the spin chuck 21. The processing unit 5 includes nozzles 51 and 52 and a chemical liquid supply unit 53.

噴嘴51、52例如係安裝於未圖示之噴嘴移動機構所具備之長條臂之頂端。該噴嘴移動機構為用以使噴嘴51、52於各自之處理位置與退避位置之間移動的機構。 The nozzles 51 and 52 are, for example, attached to the tip of a long arm provided in a nozzle moving mechanism (not shown). This nozzle moving mechanism is a mechanism for moving the nozzles 51 and 52 between the processing position and the retreat position.

處理部5具備自基板9之上方對基板9之上表面(表面)噴出藥液L1(L2)的噴嘴51(52)。噴嘴51(52)例如分別 具備向基板9之上表面延伸的筒狀之頂端側部分,自形成於該頂端側部分之頂端的噴出口以接觸基板9之上表面之方式噴出藥液L1(L2)。 The processing unit 5 includes a nozzle 51 (52) that ejects the chemical liquid L1 (L2) from above the substrate 9 to the upper surface (surface) of the substrate 9. The nozzles 51 (52) each have, for example, a cylindrical distal end portion extending toward the upper surface of the substrate 9, and ejects the chemical liquid L1 (L2) from an ejection port formed at the distal end of the distal end portion so as to contact the upper surface of the substrate 9. ).

噴嘴51係自較基板9更靠上方噴出藥液L1,以使藥業L1噴擊基板9之中間區域K2中之液體接觸位置P1。噴嘴52自較基板9更靠上方噴出藥液L2,以使藥液L2噴擊中間區域K2中之液體接觸位置P2。關於噴嘴51、52噴出藥液L1、L2時之各噴出方向u1、v1,自相對於各噴嘴51、52而與旋轉軸a1為相反側之各位置而於基板9之徑向上觀看,上述各噴出方向u1、v1係自基板9之上方朝向傾斜向下的方向。 The nozzle 51 ejects the chemical liquid L1 from above the substrate 9 so that the pharmaceutical industry L1 sprays the liquid contact position P1 in the middle region K2 of the substrate 9. The nozzle 52 ejects the medicinal solution L2 from above the substrate 9 so that the medicinal solution L2 sprays the liquid contact position P2 in the intermediate region K2. The respective ejection directions u1 and v1 when the nozzles 51 and 52 eject the chemical liquids L1 and L2 are viewed in the radial direction of the substrate 9 from the positions on the side opposite to the rotation axis a1 with respect to the respective nozzles 51 and 52. The ejection directions u1 and v1 are directions obliquely downward from above the substrate 9.

藥液供給部53對噴嘴51、52供給藥液L1、L2。具體而言,藥液供給部53係將藥液供給源531、532、配管541、542及開閉閥521、522組合而構成。藥液供給源531(532)經由配管541(542)對噴嘴51(52)供給藥液L1(L2)。於配管541(542)之路徑中途設有開閉閥521(522)。作為藥液L1、L2,例如可使用SPM、SC-1、DHF、SC-2等。藥液L1與藥液L2為相同種類之藥液。 The chemical liquid supply unit 53 supplies the chemical liquids L1 and L2 to the nozzles 51 and 52. Specifically, the medicinal solution supply unit 53 is configured by combining medicinal solution supply sources 531 and 532, pipes 541 and 542, and on-off valves 521 and 522. The chemical solution supply source 531 (532) supplies the chemical solution L1 (L2) to the nozzle 51 (52) through a pipe 541 (542). An on-off valve 521 (522) is provided in the middle of the route of the pipe 541 (542). Examples of the chemical liquids L1 and L2 include SPM, SC-1, DHF, and SC-2. The medicinal liquid L1 and the medicinal liquid L2 are the same kind of medicinal liquid.

若自藥液供給源531(532)將藥液L1(L2)供給於噴嘴51(52),則噴嘴51(52)以液柱狀之液流之形式噴出藥液L1(L2)。其中,藥液供給部53所具備之開閉閥521(522) 係藉由與控制部130電性連接之省略圖示之閥開閉機構,於控制部130之控制下開閉。更詳細而言,根據控制部130之控制而變更開閉閥521(522)之開度,藉此可變更自藥液供給源531(532)經由配管541(542)供給於噴嘴51(52)之藥液L1(12)之流量。閥開閉機構可於控制部130之控制下獨立地變更開閉閥521、522之開度。藉此,噴嘴51噴出之藥液L1之流量、與噴嘴52噴出之藥液L2之流量係相互獨立地控制。亦即,自噴嘴51(52)噴出藥液L1(L2)之噴出態樣(具體而言所噴出之藥液之噴出開始時序、噴出結束時序、噴出流量等)係藉由控制部130而控制。亦即,藉由控制部130之控制,處理部5之噴嘴51(52)噴出藥液L1(L2)之液流,而使藥液L1(L2)之液流噴擊以旋轉軸a1為中心而旋轉的基板9之上表面。 When the medicinal solution L1 (L2) is supplied from the medicinal solution supply source 531 (532) to the nozzle 51 (52), the nozzle 51 (52) ejects the medicinal solution L1 (L2) in the form of a liquid stream. Among them, the on-off valve 521 (522) provided in the chemical liquid supply unit 53 is opened and closed under the control of the control unit 130 by a valve opening and closing mechanism (not shown) electrically connected to the control unit 130. In more detail, the opening degree of the on-off valve 521 (522) is changed according to the control of the control unit 130, so that the opening of the nozzle 51 (52) supplied from the chemical liquid supply source 531 (532) through the pipe 541 (542) can be changed. Flow rate of chemical liquid L1 (12). The valve opening and closing mechanism can independently change the opening degrees of the opening and closing valves 521 and 522 under the control of the control unit 130. Thereby, the flow rate of the chemical liquid L1 ejected from the nozzle 51 and the flow rate of the chemical liquid L2 ejected from the nozzle 52 are controlled independently of each other. That is, the ejection state (specifically, the ejection start timing, ejection end timing, and ejection flow rate of the ejected chemical liquid L1 (L2)) from the nozzle 51 (52) is controlled by the control unit 130. . That is, under the control of the control unit 130, the nozzle 51 (52) of the processing unit 5 ejects the liquid flow of the chemical liquid L1 (L2), so that the liquid flow of the chemical liquid L1 (L2) is sprayed with the rotation axis a1 as the center The upper surface of the substrate 9 is rotated.

另外,如圖2所示,自噴嘴51之上方於基板9之旋轉軸a1方向上觀看,噴嘴51噴出藥液L1時之噴出方向u1係含有以下分量之方向:沿著以旋轉軸a1為中心且通過液體接觸位置P1的圓在液體接觸位置P1處之切線方向,且朝向基板9之旋轉方向上游側的分量(『方向分量』)u2;以及沿著與切線正交的基板9之徑向,自液體接觸位置P1朝向旋轉軸a1的分量(『方向分量』)u3。噴嘴51噴出藥液L1時之噴出速度的水平方向之速度分量係將以下速度分量合成而成之速度分量:沿著以旋轉軸a1為中心且通過液體接觸位置P1在圓之液體接觸位置P1 處之切線方向,且朝向基板9之旋轉方向上游側的該切線方向之速度分量;以及沿著與該切線方向正交的基板9之徑向,自液體接觸位置P1朝向旋轉軸a1的該徑向之速度分量。噴嘴51噴出藥液L1時之噴出速度的該切線方向之速度分量具有以下大小:可克服因基板9之旋轉而作用於液體接觸位置P1上之藥液L1的朝向基板9之旋轉方向下游側的力,使藥液L1向基板9之旋轉方向上游側流動。該噴出速度的該徑向之速度分量具有以下大小:可克服作用於液體接觸位置P1上之藥液L1的由基板9之旋轉所致之離心力,使該藥液L1向旋轉軸a1側流動。因此,自噴嘴51噴出之藥液L1之至少一部分於剛噴擊液體接觸位置P1後,克服作用於該藥液的朝向基板之旋轉方向下游側的力與離心力此兩種力,自液體接觸位置P1一邊擴展成液膜狀一邊向基板9之旋轉方向上游側且旋轉軸a1側流動,然後通過基板之中央區域而到達基板之周緣。更詳細而言,該藥液L1之至少一部分先暫時自液體接觸位置P1一邊向基板9之中心側彎曲一邊朝向基板9之旋轉方向上游側後,再沿著一邊向基板9之旋轉方向下游側彎曲一邊朝向基板9之中心c1的弧狀之路徑,一邊擴展成液膜狀一邊到達基板9之中心c1。然後,該藥液L1若越過基板9之中心,則因離心力之影響而沿著一邊向基板9之旋轉方向下游側彎曲一邊朝向基板9之周緣的弧狀之路徑,一邊擴展一邊流動(參照圖4)。 In addition, as shown in FIG. 2, viewed from above the nozzle 51 in the direction of the rotation axis a1 of the substrate 9, the discharge direction u1 when the nozzle 51 ejects the chemical liquid L1 is a direction containing the following components: along the center of the rotation axis a1 And the component passing through the tangential direction of the circle at the liquid contact position P1 at the liquid contact position P1 toward the upstream side of the rotation direction of the substrate 9 ("direction component") u2; and along the radial direction of the substrate 9 orthogonal to the tangent , The component ("direction component") u3 from the liquid contact position P1 toward the rotation axis a1. The horizontal velocity component of the ejection speed when the nozzle 51 ejects the chemical liquid L1 is a velocity component obtained by combining the following velocity components: along the center of the rotation axis a1 and passing through the liquid contact position P1 at the circular liquid contact position P1 Velocity component of the tangential direction toward the upstream side of the rotation direction of the substrate 9; and along the radial direction of the substrate 9 orthogonal to the tangential direction, from the liquid contact position P1 toward the radial direction of the rotation axis a1 Speed component. The velocity component in the tangential direction of the ejection speed when the nozzle 51 ejects the chemical liquid L1 has the following magnitude: The chemical liquid L1 acting on the liquid contact position P1 due to the rotation of the substrate 9 can be overcome toward the downstream side of the substrate 9 in the rotational direction. The force causes the chemical solution L1 to flow toward the upstream side in the rotation direction of the substrate 9. The radial velocity component of the ejection velocity has the following magnitude: the centrifugal force caused by the rotation of the substrate 9 on the chemical liquid L1 acting on the liquid contact position P1 can be overcome, so that the chemical liquid L1 flows toward the rotation axis a1 side. Therefore, at least a part of the chemical liquid L1 ejected from the nozzle 51 is immediately after the liquid contact position P1 is struck, and overcomes the two forces acting on the chemical liquid toward the downstream side of the substrate in the direction of rotation and the centrifugal force from the liquid contact position. P1 flows to the upstream side of the rotation direction of the substrate 9 and the rotation axis a1 side while expanding into a liquid film shape, and then passes through the central region of the substrate to reach the peripheral edge of the substrate. In more detail, at least a part of the chemical liquid L1 is temporarily bent from the liquid contact position P1 toward the center side of the substrate 9 while facing the upstream side of the rotation direction of the substrate 9, and then along the side toward the downstream side of the rotation direction of the substrate 9. The arc-shaped path toward the center c1 of the substrate 9 is bent while reaching the center c1 of the substrate 9 while expanding into a liquid film shape. Then, when the chemical solution L1 passes the center of the substrate 9, it flows along the arc-shaped path toward the periphery of the substrate 9 while bending toward the downstream side of the rotation direction of the substrate 9 due to the influence of centrifugal force (see FIG. 4).

因此,圖2所示的噴嘴51以如下方式噴出藥液L1:剛噴擊液體接觸位置P1後自液體接觸位置P1流向旋轉軸a1側的藥液L1之量,多於剛噴擊液體接觸位置P1後自液體接觸位置P1流向與旋轉軸a1相反之側的藥液L1之量。另外,關於剛噴出至液體接觸位置P1後之藥液L1,因由基板9之旋轉所致之離心力並未強烈地作用,故而亦有藥液L1之溫度不易降低之優點。 Therefore, the nozzle 51 shown in FIG. 2 ejects the chemical liquid L1 in such a manner that the amount of the chemical liquid L1 flowing from the liquid contact position P1 to the rotation axis a1 side immediately after the liquid contact position P1 is sprayed is more than that immediately after the liquid contact position P1 is sprayed. After P1, the amount of the chemical liquid L1 flowing from the liquid contact position P1 to the side opposite to the rotation axis a1. In addition, regarding the chemical liquid L1 immediately after being ejected to the liquid contact position P1, the centrifugal force caused by the rotation of the substrate 9 does not work strongly, so there is also an advantage that the temperature of the chemical liquid L1 is not easy to decrease.

自噴嘴52之上方於基板9之旋轉軸a1方向上觀看,噴嘴52噴出藥液L2時之噴出方向v1係含有以下分量之方向:沿著以旋轉軸a1為中心且通過液體接觸位置P2的圓之液體接觸位置P2處之切線方向,且朝向基板9之旋轉方向下游側的分量(『方向分量』)v2。因此,自噴嘴52噴出之藥液L2自剛噴擊液體接觸位置P2後開始強烈受到離心力之影響,沿著一邊向基板9之旋轉方向下游側彎曲一邊朝向基板9之周緣的弧狀之路徑,一邊擴展成液膜狀一邊流動(參照圖4)。 Viewed from above the nozzle 52 in the direction of the rotation axis a1 of the substrate 9, the discharge direction v1 when the nozzle 52 sprays the liquid L2 is a direction containing the following components: along a circle centered on the rotation axis a1 and passing through the liquid contact position P2 The component ("direction component") v2 of the tangential direction at the liquid contact position P2, which is toward the downstream side in the rotation direction of the substrate 9. Therefore, the chemical liquid L2 sprayed from the nozzle 52 is strongly affected by the centrifugal force immediately after hitting the liquid contact position P2, and follows an arc-shaped path toward the peripheral edge of the substrate 9 while bending toward the downstream side of the rotation direction of the substrate 9, It flows while expanding into a liquid film shape (see FIG. 4).

因此,自噴嘴51噴出之藥液L1之一部分自液體接觸位置P1一邊擴展成液膜狀,一邊通過基板9之中央部分而到達基板9之周緣,從噴嘴52噴出之藥液L2之一部分自液體接觸位置P2一邊擴展成液膜狀,一邊於基板9之周邊區域K3中向基板9之旋轉方向下游側流動並且到達基板9之周緣部。 Therefore, a part of the medicinal liquid L1 ejected from the nozzle 51 expands into a liquid film shape from the liquid contact position P1, and passes through the central portion of the substrate 9 to reach the periphery of the substrate 9. A part of the medicinal liquid L2 ejected from the nozzle 52 is from the liquid. While the contact position P2 is expanded into a liquid film shape, it flows in the peripheral region K3 of the substrate 9 toward the downstream side in the rotation direction of the substrate 9 and reaches the peripheral edge portion of the substrate 9.

於圖2之例中,假想圓201以基板9之中心c1(旋轉軸a1)為中心且通過液體接觸位置P1、P2兩者。亦即,液體接觸位置P1與液體接觸位置P2為距旋轉軸a1相同距離之位置。另外,藥液L1、L2一邊擴展成液膜狀一邊流動。因此,藥液L1於液體接觸位置P1附近形成之液膜、與藥液L2於液體接觸位置P2附近形成之液膜係於基板9之徑向上擴展至大致相同之範圍。因此,更容易將自兩個噴嘴分別噴出之藥液L1、藥液L2供給於基板9之整個表面。 In the example of FIG. 2, the imaginary circle 201 is centered on the center c1 (rotation axis a1) of the substrate 9 and passes through both the liquid contact positions P1 and P2. That is, the liquid contact position P1 and the liquid contact position P2 are the same distance from the rotation axis a1. In addition, the chemical liquids L1 and L2 flow while expanding into a liquid film shape. Therefore, the liquid film formed by the chemical liquid L1 near the liquid contact position P1 and the liquid film formed by the chemical liquid L2 near the liquid contact position P2 extend to approximately the same range in the radial direction of the substrate 9. Therefore, it is easier to supply the chemical liquid L1 and the chemical liquid L2 respectively ejected from the two nozzles to the entire surface of the substrate 9.

圖5係以圖表形式表示基板9之半徑與熱損耗的關係之一例的圖。於圖5所示之例中,於半徑150mm之基板9中,熱損耗隨著自基板9之中心c1朝向周緣而增加。於距中心c1之半徑約130mm以內之範圍內,熱損耗之增加率相對較低,但於半徑約130mm以上之範圍內,熱損耗朝向周緣而以指數函數形式增加。因此,為了利用供給於基板之上表面的藥液使基板之溫度分佈變得均勻,需要與供給於基板之中央部分的藥液相比而增加供給於基板之周邊部分的藥液之量。 FIG. 5 is a diagram showing an example of the relationship between the radius of the substrate 9 and the heat loss in a graph format. In the example shown in FIG. 5, in the substrate 9 having a radius of 150 mm, the heat loss increases from the center c1 of the substrate 9 toward the periphery. Within a radius of approximately 130 mm from the center c1, the increase rate of heat loss is relatively low, but within a radius of approximately 130 mm or more, the heat loss increases toward the periphery as an exponential function. Therefore, in order to make the temperature distribution of the substrate uniform using the chemical solution supplied on the upper surface of the substrate, it is necessary to increase the amount of the chemical solution supplied to the peripheral portion of the substrate compared to the chemical solution supplied to the central portion of the substrate.

圖6係以圖表形式表示圖2所示之構成的基板處理裝置1中之藥液之噴出態樣、與基板之溫度分佈的關係之一例的圖。以四邊形表示之溫度分佈表示僅自噴嘴51、52 中之噴嘴(「第一噴嘴」)51噴出藥液L1時的基板9之溫度分佈。以塗黑菱形表示之溫度分佈表示自噴嘴51、52兩者噴出藥液L1、L2時的基板9之溫度分佈。基板9之轉速為200rpm,一部分自液體接觸位置P1向中心c1側流動的藥液L1之噴出流量為2L/min.,自液體接觸位置P2主要向基板9之周緣側流動的藥液L2之噴出流量為3L/min.。亦即,噴嘴52噴出之藥液L2之流量多於噴嘴51噴出之藥液L1之流量。 FIG. 6 is a diagram showing an example of the relationship between the ejection state of the chemical solution and the temperature distribution of the substrate in the substrate processing apparatus 1 having the configuration shown in FIG. 2 in a graph format. The temperature distribution represented by a quadrangle represents the temperature distribution of the substrate 9 when the chemical liquid L1 is ejected from only the nozzle ("first nozzle") 51 of the nozzles 51, 52. The temperature distribution indicated by the black-painted diamond represents the temperature distribution of the substrate 9 when the chemical liquids L1 and L2 are ejected from both the nozzles 51 and 52. The rotation speed of the substrate 9 is 200 rpm, and a part of the medicine liquid L1 flowing from the liquid contact position P1 to the center c1 is discharged at a rate of 2L / min. The liquid medicine L2 mainly flows from the liquid contact position P2 to the peripheral side of the substrate 9 The flow is 3L / min. That is, the flow rate of the chemical liquid L2 ejected from the nozzle 52 is greater than the flow rate of the chemical liquid L1 ejected from the nozzle 51.

此處,關於藥液L1之噴出流量X與藥液L2之噴出流量Y的關係,若於基板9中將較假想圓201(參照圖2)更靠中心c1側之部分之面積設為Acm2,且將周緣側之部分之面積設為Bcm2,則上述關係係藉由(1)式而表示。α係值根據將收容基板處理裝置1的未圖示之腔室內之氛圍自腔室排氣時的風速、及基板9之轉速等而變動的變量。 Here, regarding the relationship between the ejection flow rate X of the chemical liquid L1 and the ejection flow rate Y of the chemical liquid L2, if the area of the portion closer to the center c1 side than the virtual circle 201 (see FIG. 2) is set to Acm 2 in the substrate 9 If the area of the part on the periphery side is Bcm 2 , the above relationship is expressed by the formula (1). The α-series value is a variable that varies depending on the wind speed when exhausting the atmosphere in a chamber (not shown) that houses the substrate processing apparatus 1 from the chamber, and the rotation speed of the substrate 9.

如圖6之圖表所示,僅進行噴嘴51之藥液L1的噴出時,於供給有大量之藥液L1的基板9之中央區域K1、中間區域K2,基板9之徑向之溫度分佈成為相對較均勻之分佈,但於周邊區域K3中,因所供給之藥液L1不足, 故基板9之溫度朝向基板之周緣而急遽降低。然而,藉由根據基板9之轉速或噴出藥液L1、L2之區域之大小等而適當調整藥液L1、L2之噴出流量,自噴嘴51、52兩者噴出藥液L1、L2,可遍及基板之上表面整個區域而實現相對較均勻之溫度分佈。 As shown in the graph of FIG. 6, when only the chemical solution L1 of the nozzle 51 is ejected, the temperature distribution in the radial direction of the substrate 9 in the central region K1 and the intermediate region K2 of the substrate 9 where a large amount of the chemical solution L1 is supplied becomes relative. The distribution is relatively uniform, but in the peripheral region K3, because the supplied chemical liquid L1 is insufficient, the temperature of the substrate 9 decreases sharply toward the periphery of the substrate. However, by appropriately adjusting the discharge flow rate of the liquid medicines L1 and L2 according to the rotation speed of the substrate 9 or the size of the area where the liquid medicines L1 and L2 are discharged, the liquid medicines L1 and L2 are discharged from both the nozzles 51 and 52, which can be spread throughout the substrate. A relatively uniform temperature distribution is achieved over the entire area of the upper surface.

再者,如圖2所示般,於基板處理裝置1中,藥液L2之液體接觸位置P2較佳為位於藥液L1自液體接觸位置P1向周圍擴展而形成於基板9上的液膜之上。 Furthermore, as shown in FIG. 2, in the substrate processing apparatus 1, the liquid contact position P2 of the chemical liquid L2 is preferably located on the liquid film formed on the substrate 9 and spreads from the liquid contact position P1 to the surroundings. on.

圖10係以圖表形式表示噴嘴51、52噴出之藥液L1、L2於基板9之徑向上的膜厚分佈之一例的圖。如上所述,自噴嘴51噴出至液體接觸位置P1之藥液L1自液體接觸位置P1一邊擴展成液膜狀一邊向基板9之旋轉方向上游側且旋轉軸a1側流動,然後通過基板9之中央區域K1而到達基板9之周緣。藉此,對液體接觸位置P1供給多量之藥液,且對基板9之中央部分之各位置供給少量之藥液L1。 FIG. 10 is a diagram showing an example of a film thickness distribution of the chemical liquids L1 and L2 ejected from the nozzles 51 and 52 in the radial direction of the substrate 9 in a graph form. As described above, the chemical liquid L1 ejected from the nozzle 51 to the liquid contact position P1 flows from the liquid contact position P1 to a liquid film side while flowing toward the upstream side of the substrate 9 in the rotation direction and the rotation axis a1 side, and then passes through the center of the substrate 9 The region K1 reaches the periphery of the substrate 9. Thereby, a large amount of the chemical liquid is supplied to the liquid contact position P1, and a small amount of the chemical liquid L1 is supplied to each position of the central portion of the substrate 9.

基板9之各部位的周方向上之轉速係自旋轉軸a1朝向基板9之周緣而增加。另外,供給於基板9之各位置的藥液L1、L2係隨著各位置的周方向上之轉速增加而於周方向上被拉伸,膜厚減小。而且,液體接觸位置P1處之 基板9之周方向之轉速高,中央區域K1中之基板9之周方向之轉速低。 The rotational speed in the circumferential direction of each part of the substrate 9 increases from the rotation axis a1 toward the peripheral edge of the substrate 9. In addition, the chemical liquids L1 and L2 supplied to the respective positions of the substrate 9 are stretched in the circumferential direction as the rotation speed in the circumferential direction of each position increases, and the film thickness is reduced. Further, the rotation speed in the circumferential direction of the substrate 9 at the liquid contact position P1 is high, and the rotation speed in the circumferential direction of the substrate 9 in the central region K1 is low.

因此,雖自噴嘴51對液體接觸位置P1供給較基板9之中央區域K1更為多量之藥液L1,但該藥液L1之膜厚容易變得較中央區域K1更薄。雖自噴嘴51對中央區域K1供給較液體接觸位置P1更為少量之藥液L1,但該藥液L1之膜厚不易變得較液體接觸位置P1薄。因此,如圖10所示,可藉由噴嘴51而提高基板9之表面中較液體接觸位置P1更靠基板9之中心側之部分中的藥液L1之膜厚之均勻性。 Therefore, although a greater amount of the chemical solution L1 is supplied from the nozzle 51 to the liquid contact position P1 than the central region K1 of the substrate 9, the film thickness of the chemical solution L1 is likely to be thinner than the central region K1. Although a smaller amount of the chemical liquid L1 than the liquid contact position P1 is supplied from the nozzle 51 to the central region K1, the film thickness of the chemical liquid L1 is less likely to become thinner than the liquid contact position P1. Therefore, as shown in FIG. 10, the uniformity of the film thickness of the chemical liquid L1 in the portion of the surface of the substrate 9 closer to the center side of the substrate 9 than the liquid contact position P1 can be improved by the nozzle 51.

另外,自噴嘴52噴出之藥液L2大部分自液體接觸位置P2一邊擴展成液膜狀,一邊於基板9之周邊區域中向基板9之旋轉方向下游側流動並且到達基板9之周緣部。因此,可藉由噴嘴51與噴嘴52對基板9之上表面整個區域供給藥液L1、L2,並且藉由第一噴嘴而提高供給於較液體接觸位置P1更靠旋轉軸a1側之部分、亦即基板9之中央區域K1及基板9之中間區域K2中較液體接觸位置P1更靠旋轉軸a1側部分的藥液L1之膜厚之均勻性。另外,雖然因基板9之旋轉而基板9之熱損耗自基板9之中心側朝向周緣側急遽增加,但自第二噴嘴噴出之藥液L2係主要供給於基板9之周邊區域K3,故可與供給於基板9之中央部的藥液L1相比而增加供給於基板9之周 邊區域K3的藥液L1、L2。因此,可改善基板9之表面之溫度分佈之均勻性。 In addition, most of the chemical liquid L2 ejected from the nozzle 52 spreads into a liquid film shape from the liquid contact position P2, and flows toward the downstream side of the rotation direction of the substrate 9 in the peripheral region of the substrate 9 and reaches the peripheral edge portion of the substrate 9. Therefore, the chemical liquids L1 and L2 can be supplied to the entire area of the upper surface of the substrate 9 through the nozzle 51 and the nozzle 52, and the liquid can be supplied to the portion closer to the rotation axis a1 side than the liquid contact position P1 through the first nozzle. That is, the uniformity of the film thickness of the chemical liquid L1 in the central region K1 of the substrate 9 and the intermediate region K2 of the substrate 9 is closer to the rotation axis a1 than the liquid contact position P1. In addition, although the heat loss of the substrate 9 increases sharply from the center side of the substrate 9 toward the peripheral side due to the rotation of the substrate 9, the chemical liquid L2 sprayed from the second nozzle is mainly supplied to the peripheral area K3 of the substrate 9, so it can be connected The chemical liquid L1 supplied to the central portion of the substrate 9 is increased compared to the chemical liquid L1 supplied to the peripheral area K3 of the substrate 9. Therefore, the uniformity of the temperature distribution on the surface of the substrate 9 can be improved.

(4.噴嘴51、52之配置關係之例) (4. Example of arrangement relationship of nozzles 51 and 52)

圖7至圖9係分別表示基板處理裝置1之噴嘴51、52的與圖2所示之配置關係不同的其他配置關係之例的圖。於圖7至圖9中,噴嘴51自與圖2中記載之噴嘴51相同之位置以相同噴出態樣將藥液L1噴出至液體接觸位置P1。 7 to 9 are diagrams each showing an example of another arrangement relationship of the nozzles 51 and 52 of the substrate processing apparatus 1 which is different from the arrangement relationship shown in FIG. 2. In FIGS. 7 to 9, the nozzle 51 ejects the medicinal liquid L1 to the liquid contact position P1 in the same ejection state from the same position as the nozzle 51 described in FIG. 2.

於圖7所示之配置關係中,藥液L2之液體接觸位置P2較藥液L1之液體接觸位置P1更遠離旋轉軸a1,且較液體接觸位置P1與基板9之周緣中最接近液體接觸位置P1之點的中點(「關注中點」)更接近旋轉軸a1。假想圓202以中心c1為中心且通過該中點,假想圓201以中心c1為中心且通過液體接觸位置P1。於該情形時,雖然於液體接觸位置P1與液體接觸位置P2之間於基板9之徑向上空開間隔,但藥液L1(L2)自液體接觸位置P1(P2)一邊向周圍擴展一邊流動。因此抑制以下情況:於基板9之徑向上,在藥液L1於液體接觸位置P1附近形成之液膜、與藥液L2於液體接觸位置P2附近形成之液膜之間產生間隙。 In the arrangement shown in FIG. 7, the liquid contact position P2 of the chemical liquid L2 is farther away from the rotation axis a1 than the liquid contact position P1 of the chemical liquid L1, and is closest to the liquid contact position in the peripheral edge of the substrate 9 from the liquid contact position P1 The midpoint of the point of P1 ("attention midpoint") is closer to the rotation axis a1. The imaginary circle 202 is centered on the center c1 and passes through the midpoint, and the imaginary circle 201 is centered on the center c1 and passes through the liquid contact position P1. In this case, although there is a space in the radial direction of the substrate 9 between the liquid contact position P1 and the liquid contact position P2, the chemical liquid L1 (L2) flows from the liquid contact position P1 (P2) while expanding toward the surroundings. Therefore, in the radial direction of the substrate 9, a gap is formed between the liquid film formed near the liquid contact position P1 of the chemical liquid L1 and the liquid film formed near the liquid contact position P2 of the chemical liquid L1.

於圖8所示之配置關係中,噴嘴51噴出之藥液L1之液體接觸位置P1、與噴嘴52噴出之藥液L2之液體接觸位置P2係於形成基板9之直徑的同一直線上,分別位於將旋轉軸a1夾持於彼此之間的位置。 In the arrangement relationship shown in FIG. 8, the liquid contact position P1 of the chemical liquid L1 ejected from the nozzle 51 and the liquid contact position P2 of the chemical liquid L2 ejected from the nozzle 52 are on the same straight line forming the diameter of the substrate 9 and are located respectively The rotation shafts a1 are sandwiched between positions.

於圖9所示之配置關係中,自噴嘴52之上方於基板9之旋轉軸a1方向上觀看,噴嘴52噴出藥液L2時之噴出方向v1係含有以下分量之方向:沿著以旋轉軸a1為中心且通過液體接觸位置P2的圓在液體接觸位置P2處之切線方向,且朝向基板9之旋轉方向下游側的分量v2;以及沿著與該切線正交的基板9之徑向,自液體接觸位置P2朝向與旋轉軸a1相反之側的分量(『方向分量』)v3。因此,該切線與噴出方向v1所成之角度成為銳角。因此,可自噴嘴52對基板9之周邊區域K3有效率地供給藥液L2。 In the arrangement relationship shown in FIG. 9, viewed from above the nozzle 52 in the direction of the rotation axis a1 of the substrate 9, the discharge direction v1 when the nozzle 52 ejects the chemical liquid L2 is a direction containing the following components: along the rotation axis a1 And the component v2 of the circle passing through the liquid contact position P2 at the center of the liquid contact position P2 toward the downstream side of the rotation direction of the substrate 9; and along the radial direction of the substrate 9 orthogonal to the tangent, The component ("direction component") v3 of the contact position P2 faces the side opposite to the rotation axis a1. Therefore, an angle formed by the tangent line and the ejection direction v1 becomes an acute angle. Therefore, the chemical solution L2 can be efficiently supplied from the nozzle 52 to the peripheral region K3 of the substrate 9.

(5.基板處理裝置之動作) (5. Operation of substrate processing device)

圖11係表示基板處理裝置1之動作之一例的流程圖。基板處理裝置1按該流程圖利用藥液L1、L2對基板9進行處理。於該流程圖之動作開始之前,預先藉由旋轉夾盤21保持基板9。 FIG. 11 is a flowchart showing an example of the operation of the substrate processing apparatus 1. The substrate processing apparatus 1 processes the substrate 9 using the chemical solutions L1 and L2 according to this flowchart. Before the operation of this flowchart is started, the substrate 9 is held in advance by rotating the chuck 21.

首先,旋轉機構231按照控制部130之控制使旋轉夾盤21開始旋轉,藉此使經旋轉夾盤21保持之基板9開始旋轉(圖11之步驟S10)。 First, the rotation mechanism 231 starts the rotation of the spin chuck 21 according to the control of the control unit 130, thereby starting the rotation of the substrate 9 held by the spin chuck 21 (step S10 in FIG. 11).

繼而,處理部5之閥開閉機構於控制部130之控制下將開閉閥521以預定之開度打開,藉此噴嘴51開始噴出藥液L1而使藥液L1噴擊基板9之旋轉軌跡中的中間區域K2中之液體接觸位置P1(步驟S20),閥開閉機構於控制部130之控制下將開閉閥522以預定之開度打開,藉此噴嘴52開始噴出藥液L2以使藥液L2接觸中間區域K2中之液體接觸位置P2(步驟S30)。 Then, the valve opening and closing mechanism of the processing unit 5 opens the on-off valve 521 at a predetermined opening degree under the control of the control unit 130, whereby the nozzle 51 starts to eject the chemical liquid L1 and causes the chemical liquid L1 to strike the rotation track of the substrate 9. The liquid contact position P1 in the middle area K2 (step S20), the valve opening and closing mechanism opens the on-off valve 522 at a predetermined opening degree under the control of the control unit 130, whereby the nozzle 52 starts to eject the liquid medicine L2 to make the liquid medicine L2 contact The liquid contact position P2 in the intermediate area K2 (step S30).

步驟S20中噴出之藥液L1之噴出方向係自上方於旋轉軸a1方向上觀看該藥液L1而含有以下分量之方向:沿著以旋轉軸a1為中心且通過液體接觸位置P1在圓之液體接觸位置P1之切線方向,且朝向基板9之旋轉方向上游側的分量;以及沿著與該切線正交的基板9之徑向,自液體接觸位置P1朝向旋轉軸a1之分量。 The ejection direction of the medicinal liquid L1 ejected in step S20 is a direction in which the medicinal liquid L1 is viewed from above in the direction of the rotation axis a1 and contains the following components: along the center of the rotation axis a1 and passing through the liquid contact position P1 in a circular liquid The component of the tangential direction of the contact position P1 toward the upstream side in the rotation direction of the substrate 9; and the component from the liquid contact position P1 toward the rotation axis a1 along the radial direction of the substrate 9 orthogonal to the tangent.

於步驟S20中,噴嘴51噴出之藥液L1之噴出速度的該切線方向之速度分量具有以下大小:可克服因基板9之旋轉而作用於液體接觸位置P1上之藥液的朝向基板9之旋轉方向下游側的力,使該藥液向基板9之旋轉方向上游側流動。藥液L1之噴出速度的徑向之速度分量具有以 下大小:可克服作用於液體接觸位置P1上之藥液L1的由基板9之旋轉所致之離心力,使該藥液L1向旋轉軸a1側流動。於步驟S20中,噴嘴51較佳為以如下方式噴出藥液L1:剛噴觸液體接觸位置P1後自液體接觸位置P1朝向旋轉軸a1側的藥液L1之量,多於剛噴觸液體接觸位置P1後自液體接觸位置P1朝向與旋轉軸a1相反之側的藥液L1之量。於步驟S30中,噴嘴52噴出之藥液L2之噴出方向係自上方於旋轉軸a1方向上觀看該藥液L2而含有以下分量:沿著以旋轉軸a1為中心且通過液體接觸位置P2的圓在液體接觸位置P2之切線方向,且朝向基板9之旋轉方向下游側的分量。 In step S20, the velocity component of the tangential direction of the ejection speed of the chemical liquid L1 sprayed from the nozzle 51 has the following magnitude: it can overcome the rotation of the chemical liquid on the liquid contact position P1 toward the substrate 9 due to the rotation of the substrate 9 The force on the downstream side causes the chemical solution to flow toward the upstream side in the rotation direction of the substrate 9. The radial velocity component of the ejection speed of the chemical liquid L1 has the following magnitude: it can overcome the centrifugal force caused by the rotation of the substrate 9 of the chemical liquid L1 acting on the liquid contact position P1, so that the chemical liquid L1 is directed to the rotation axis a1 side flow. In step S20, the nozzle 51 preferably ejects the chemical liquid L1 in the following manner: the amount of the chemical liquid L1 from the liquid contact position P1 toward the rotation axis a1 side immediately after the liquid contact position P1 is touched is more than that immediately after the liquid contact position P1 is touched After the position P1, the amount of the chemical liquid L1 from the liquid contact position P1 toward the side opposite to the rotation axis a1. In step S30, the ejection direction of the medicinal liquid L2 ejected from the nozzle 52 is viewed from above in the direction of the rotation axis a1 and contains the following components: along a circle centered on the rotation axis a1 and passing through the liquid contact position P2 The component in the tangential direction of the liquid contact position P2 and toward the downstream side in the rotation direction of the substrate 9.

控制部130等待藥液L1、L2之處理之所需時間經過,使處理部5之閥開閉機構關閉開閉閥521、522,停止噴嘴51、52之藥液L1、L2之噴出(步驟S40),然後,旋轉機構231使旋轉夾盤21停止旋轉而停止基板9的旋轉(步驟S50)。圖11所示之基板處理裝置1之處理動作結束。 The control unit 130 waits for the time required for the processing of the chemical liquids L1 and L2, causes the valve opening and closing mechanism of the processing unit 5 to close the on-off valves 521 and 522, and stops the discharge of the chemical liquids L1 and L2 of the nozzles 51 and 52 (step S40) Then, the rotation mechanism 231 stops the rotation of the spin chuck 21 and stops the rotation of the substrate 9 (step S50). The processing operation of the substrate processing apparatus 1 shown in FIG. 11 ends.

根據如以上般構成之本實施形態之基板處理裝置,自噴嘴51之上方於基板9之旋轉軸a1方向上觀看,噴嘴51噴出藥液L1時之噴出方向u1為含有以下分量之方向:沿著以旋轉軸a1為中心且通過液體接觸位置P1的圓在液體接觸位置P1之切線方向,且朝向基板9之旋轉方 向上游側的分量u2;以及沿著與該切線正交的基板9之徑向,自液體接觸位置P1朝向旋轉軸a1的分量u3。噴嘴51噴出藥液L1時之噴出速度的切線方向之速度分量具有以下大小:可克服因基板9之旋轉而作用於液體接觸位置P1上之藥液L1的朝向基板9之旋轉方向下游側的力,使藥液L1向基板9之旋轉方向上游側流動。該噴出速度的該徑向之速度分量具有以下大小:可克服作用於液體接觸位置P1上之藥液L1的由基板9之旋轉所致之離心力,使該藥液L1向旋轉軸a1側流動。因此,自第一噴嘴噴出的藥液L1之至少一部分於剛接觸液體接觸位置P1後,克服作用於藥液L1的朝向基板9之旋轉方向下游側的力,自液體接觸位置P1先暫時一邊向基板9之中心側彎曲一邊朝向基板9之旋轉方向上游側後,沿著一邊向基板9之旋轉方向下游側彎曲一邊朝向基板9之中心c1的弧狀之路徑,一邊擴展成液膜狀一邊到達基板9之中心c1。然後,該藥液L1若越過基板9之中心,則因離心力之影響而沿著一邊向基板9之旋轉方向下游側彎曲一邊朝向基板9之周緣的弧狀之路徑,一邊擴展一邊流動。自噴嘴52之上方於基板9之旋轉軸a1方向上觀看,噴嘴52噴出藥液L2時之噴出方向v1為含有以下分量之方向:沿著以旋轉軸a1為中心且通過液體接觸位置P2的圓在液體接觸位置P2之切線方向,且朝向基板9之旋轉方向下游側的分量v2。因此,藥液L2自剛接觸液體接觸位置P2後開始強烈受到離心力之影響,沿著一邊向基板9 之旋轉方向下游側彎曲一邊朝向基板9之周緣的弧狀之路徑,一邊擴展成液膜狀一邊流動。因此,自噴嘴51噴出之藥液L1之一部分自液體接觸位置P1一邊擴展成液膜狀,一邊通過基板9之中央部分而到達基板9之周緣,自噴嘴52噴出之藥液L2之一部分自液體接觸位置P2一邊擴展成液膜狀,一邊於基板9之周邊區域K3中向基板9之旋轉方向下游側流動並且到達基板9之周緣部。因此,自噴嘴51、52噴出之藥液L1、L2總體被供給於基板9之整個表面。另外,雖因基板9之旋轉而基板9之熱損耗自基板9之中心側朝向周緣側急遽增加,但自第二噴嘴噴出之藥液L2係主要供給於基板9之周邊區域K3,故可增加供給於基板9之周邊區域K3的藥液L1、L2之量。 According to the substrate processing apparatus of this embodiment configured as described above, viewed from above the nozzle 51 in the direction of the rotation axis a1 of the substrate 9, the ejection direction u1 when the nozzle 51 ejects the chemical liquid L1 is a direction containing the following components: A component u2 centered on the rotation axis a1 and passing through the liquid contact position P1 in the tangential direction of the liquid contact position P1 and toward the upstream side of the rotation direction of the substrate 9; and along the radial direction of the substrate 9 orthogonal to the tangent , The component u3 from the liquid contact position P1 toward the rotation axis a1. The velocity component in the tangential direction of the ejection speed when the nozzle 51 ejects the chemical liquid L1 has the following magnitude: it can overcome the force of the chemical liquid L1 on the liquid contact position P1 toward the downstream side in the direction of rotation of the substrate 9 due to the rotation of the substrate 9 , The chemical solution L1 is caused to flow toward the upstream side in the rotation direction of the substrate 9. The radial velocity component of the ejection velocity has the following magnitude: the centrifugal force caused by the rotation of the substrate 9 on the chemical liquid L1 acting on the liquid contact position P1 can be overcome, so that the chemical liquid L1 flows toward the rotation axis a1 side. Therefore, after at least a portion of the chemical liquid L1 ejected from the first nozzle immediately contacts the liquid contact position P1, the force acting on the downstream side of the chemical liquid L1 toward the rotation direction of the substrate 9 is overcome, and the liquid contact position P1 is temporarily moved to one side first. After the center side of the substrate 9 is bent toward the upstream side of the rotation direction of the substrate 9, the arc-shaped path toward the center c1 of the substrate 9 while being bent toward the downstream side of the rotation direction of the substrate 9 is extended while reaching a liquid film shape. The center c1 of the substrate 9. Then, when the chemical solution L1 crosses the center of the substrate 9, it flows along an arc-shaped path toward the periphery of the substrate 9 while bending toward the downstream side of the rotation direction of the substrate 9 due to the influence of centrifugal force. Viewed from above the nozzle 52 in the direction of the rotation axis a1 of the substrate 9, the discharge direction v1 when the nozzle 52 ejects the chemical liquid L2 is a direction containing the following components: along a circle centered on the rotation axis a1 and passing through the liquid contact position P2 The component v2 in the tangential direction of the liquid contact position P2 and toward the downstream side in the rotation direction of the substrate 9. Therefore, the medicinal solution L2 has been strongly affected by centrifugal force immediately after contacting the liquid contact position P2, and has expanded into a liquid film shape along an arc-shaped path that is curved toward the downstream side of the substrate 9 in the direction of rotation and toward the periphery of the substrate 9. One side flows. Therefore, a part of the medicinal liquid L1 ejected from the nozzle 51 expands into a liquid film shape from the liquid contact position P1, and passes through the central portion of the substrate 9 to reach the periphery of the substrate 9; While the contact position P2 is expanded into a liquid film shape, it flows in the peripheral region K3 of the substrate 9 toward the downstream side in the rotation direction of the substrate 9 and reaches the peripheral edge portion of the substrate 9. Therefore, the chemical liquids L1 and L2 ejected from the nozzles 51 and 52 are supplied to the entire surface of the substrate 9 as a whole. In addition, although the heat loss of the substrate 9 increases sharply from the center side of the substrate 9 toward the peripheral side due to the rotation of the substrate 9, the chemical liquid L2 sprayed from the second nozzle is mainly supplied to the peripheral area K3 of the substrate 9, so it can be increased The amount of the chemical liquids L1 and L2 supplied to the peripheral region K3 of the substrate 9.

另外,根據本實施形態之基板處理裝置,噴嘴51噴出之藥液L1之液體接觸位置P1、與噴嘴52噴出之藥液L2之液體接觸位置P2係距旋轉軸a1為相同距離。因此,更容易將自兩個噴嘴分別噴出之藥液L1、L2供給於基板9之整個表面。 In addition, according to the substrate processing apparatus of this embodiment, the liquid contact position P1 of the chemical liquid L1 ejected from the nozzle 51 and the liquid contact position P2 of the chemical liquid L2 ejected from the nozzle 52 are the same distance from the rotation axis a1. Therefore, it is easier to supply the chemical liquids L1 and L2 discharged from the two nozzles to the entire surface of the substrate 9.

另外,根據本實施形態之基板處理裝置,噴嘴51噴出之藥液L1之液體接觸位置P1、與噴嘴52噴出之藥液L2之液體接觸位置P2係於形成基板9之直徑的同一直線上,分別位於將旋轉軸a1夾持於彼此之間的位置。因此,例如於自基板9之上方觀看,兩個噴嘴噴出之藥液L1、 藥液L2係相互平行且向相同方向噴出之情形時,可將噴嘴52噴出之藥液L2之噴出方向v1設定為自基板9之上方觀看而不具有朝向基板9之中心側的分量之方向。因此,可自噴嘴52對基板9之周邊區域K3有效率地供給藥液L2。 In addition, according to the substrate processing apparatus of this embodiment, the liquid contact position P1 of the chemical liquid L1 ejected from the nozzle 51 and the liquid contact position P2 of the chemical liquid L2 ejected from the nozzle 52 are on the same straight line forming the diameter of the substrate 9, respectively. It is located in the position which clamped the rotation axis a1 between each other. Therefore, for example, when the chemical liquid L1 and the chemical liquid L2 ejected from the two nozzles are parallel to each other and ejected in the same direction when viewed from above the substrate 9, the ejection direction v1 of the chemical liquid L2 ejected from the nozzle 52 may be set to Viewed from above the substrate 9 without having a direction of a component toward the center side of the substrate 9. Therefore, the chemical solution L2 can be efficiently supplied from the nozzle 52 to the peripheral region K3 of the substrate 9.

另外,根據本實施形態的基板處理裝置,噴嘴52噴出之藥液L2之液體接觸位置P2係位於噴嘴51噴出之藥液L1自液體接觸位置P1向周圍擴展而形成於基板9上的液膜之上。藉此,與液體接觸位置P2位於基板9上自噴嘴51噴出之藥液L1形成的液膜以外之部分之情形相比,可減少自噴嘴52噴出之藥液L2之濺液。 In addition, according to the substrate processing apparatus of this embodiment, the liquid contact position P2 of the chemical liquid L2 ejected from the nozzle 52 is located at the liquid film formed on the substrate 9 and spreads from the liquid contact position P1 to the periphery of the chemical liquid L1 ejected from the nozzle 51. on. Thereby, compared with the case where the liquid contact position P2 is located at a portion other than the liquid film formed by the chemical liquid L1 ejected from the nozzle 51 on the substrate 9, the splash of the chemical liquid L2 ejected from the nozzle 52 can be reduced.

另外,根據本實施形態之基板處理裝置,噴嘴51以如下方式噴出藥液L1:剛噴擊液體接觸位置P1後自液體接觸位置P1朝向旋轉軸a1側的藥液L1之量,多於剛噴擊液體接觸位置P1後自液體接觸位置P1朝向與旋轉軸a1相反之側的藥液L1之量;自噴嘴52之上方於基板9之旋轉軸a1方向上觀看,噴嘴52噴出藥液L2時之噴出方向v1係含有以下分量之方向:沿著以旋轉軸a1為中心且通過液體接觸位置P2的圓之液體接觸位置P2處之切線方向,且朝向基板9之旋轉方向之下游側的分量v2。因此,自噴嘴51噴出之藥液L1容易自液體接觸位置P1一邊擴展成液膜狀一邊朝向基板9之中心流動,進而到達 相對於基板9之中心而與液體接觸位置P1為相反側的基板9之周緣。藉此,對第一液體接觸位置供給多量之藥液,且對基板之中央部分之各位置供給較第一液體接觸位置更為少量之藥液。基板之各部位的周方向上之轉速係自旋轉軸朝向基板之周緣而增加。另外,供給於基板之各位置的藥液係隨著各位置的周方向上之轉速增加而於周方向被拉伸,膜厚減小。因此,雖對第一液體接觸位置供給較基板之中央區域更為多量之藥液,但該藥液之膜厚容易變得較基板之中央區域更薄,另一方面,雖對基板之中央區域供給較第一液體接觸位置更為少量之藥液,但該藥液之膜厚不易變得較第一液體接觸位置薄。因此,可藉由第一噴嘴而提高基板表面中較第一液體接觸位置更靠基板中心側之部分中的藥液之膜厚之均勻性。另外,自噴嘴52噴出之藥液L2之一部分自液體接觸位置P2一邊擴展成液膜狀,一邊於基板9之周邊區域K3中向基板9之旋轉方向下游側流動並且到達基板9之周緣部。因此,可藉由第一噴嘴及第二噴嘴對基板之整個表面供給藥液,並且藉由第一噴嘴而提高供給於較第一液體接觸位置更靠旋轉軸側部分、亦即基板之中央區域及基板之中間區域中較第一液體接觸位置更靠旋轉軸側部分的藥液之膜厚之均勻性。另外,雖因基板9之旋轉而基板9之熱損耗自基板9之中心側朝向周緣側急遽增加,但自第二噴嘴噴出之藥液L2係主要供給於基板9之周邊區域K3,故可與供給於基板9之中央部的藥液L1相比而增加供給於基板9之周 邊區域K3的藥液L1、L2。因此,可改善基板9之表面之溫度分佈之均勻性。 In addition, according to the substrate processing apparatus of this embodiment, the nozzle 51 ejects the chemical liquid L1 in such a manner that the amount of the chemical liquid L1 from the liquid contact position P1 toward the rotation axis a1 immediately after the liquid contact position P1 is struck is greater than that of the liquid spray After hitting the liquid contact position P1, the amount of the chemical liquid L1 from the liquid contact position P1 toward the side opposite to the rotation axis a1; when viewed from above the nozzle 52 in the direction of the rotation axis a1 of the substrate 9, the nozzle 52 ejects the chemical liquid L2. The ejection direction v1 is a direction including a component v2 along the tangential direction at the liquid contact position P2 of the circle passing through the liquid contact position P2 with the rotation axis a1 as the center, and toward the downstream side of the rotation direction of the substrate 9. Therefore, the chemical liquid L1 ejected from the nozzle 51 easily flows from the liquid contact position P1 toward the center of the substrate 9 while expanding into a liquid film shape, and then reaches the substrate 9 opposite to the liquid contact position P1 with respect to the center of the substrate 9 The perimeter. Thereby, a large amount of chemical liquid is supplied to the first liquid contact position, and a smaller amount of chemical liquid is supplied to each position of the central portion of the substrate than the first liquid contact position. The rotation speed in the circumferential direction of each part of the substrate increases from the rotation axis toward the peripheral edge of the substrate. In addition, the chemical solution supplied to each position of the substrate is stretched in the circumferential direction as the rotation speed in the circumferential direction of each position is increased, and the film thickness is reduced. Therefore, although a greater amount of chemical solution is supplied to the first liquid contact position than the central region of the substrate, the film thickness of the chemical solution is likely to be thinner than the central region of the substrate. A smaller amount of chemical liquid is supplied than the first liquid contact position, but the film thickness of the chemical liquid is less likely to become thinner than the first liquid contact position. Therefore, the uniformity of the film thickness of the chemical liquid in the portion of the substrate surface closer to the center side of the substrate than the first liquid contact position can be improved by the first nozzle. In addition, a part of the medicinal liquid L2 ejected from the nozzle 52 spreads into a liquid film shape from the liquid contact position P2, and flows toward the downstream side of the rotation direction of the substrate 9 in the peripheral region K3 of the substrate 9 and reaches the peripheral portion of the substrate 9. Therefore, the entire surface of the substrate can be supplied with the first nozzle and the second nozzle, and the first nozzle can be used to increase the supply to the portion closer to the rotation axis side than the first liquid contact position, that is, the central region of the substrate. And the uniformity of the film thickness of the chemical liquid in the middle region of the substrate closer to the rotation axis side than the first liquid contact position. In addition, although the heat loss of the substrate 9 increases sharply from the center side of the substrate 9 toward the peripheral side due to the rotation of the substrate 9, the chemical liquid L2 ejected from the second nozzle is mainly supplied to the peripheral area K3 of the substrate 9, so it can be used with The chemical liquid L1 supplied to the central portion of the substrate 9 is increased compared to the chemical liquid L1 supplied to the peripheral area K3 of the substrate 9. Therefore, the uniformity of the temperature distribution on the surface of the substrate 9 can be improved.

另外,根據本實施形態之基板處理裝置,噴嘴52噴出之藥液L2之流量多於噴嘴51噴出之藥液L1之流量,故可自噴嘴52對基板9之周邊區域K3供給更多之藥液L2。 In addition, according to the substrate processing apparatus of this embodiment, the flow rate of the chemical liquid L2 sprayed from the nozzle 52 is greater than the flow rate of the chemical liquid L1 sprayed from the nozzle 51, so that more chemical liquid can be supplied from the nozzle 52 to the peripheral region K3 of the substrate 9. L2.

另外,根據本實施形態之基板處理裝置,自噴嘴52之上方於基板9之旋轉軸a1方向上觀看,噴嘴52噴出藥液L2時之噴出方向v1係含有以下分量之方向:沿著以旋轉軸a1為中心且通過液體接觸位置P2的圓在液體接觸位置P2之切線方向,且朝向基板9之旋轉方向下游側的分量v2;沿著與切線正交的基板9之徑向,自液體接觸位置P2朝向與旋轉軸a1相反之側的分量v3。因此,可自噴嘴52對基板9之周邊區域K3有效率地供給藥液L2。 In addition, according to the substrate processing apparatus of this embodiment, viewed from above the nozzle 52 in the direction of the rotation axis a1 of the substrate 9, the discharge direction v1 when the nozzle 52 ejects the liquid medicine L2 is a direction containing the following components: along the rotation axis The component v2 with a1 as the center and passing through the liquid contact position P2 in the tangential direction of the liquid contact position P2 and facing the downstream side of the rotation direction of the substrate 9; along the radial direction of the substrate 9 orthogonal to the tangent, from the liquid contact position P2 faces the component v3 on the side opposite to the rotation axis a1. Therefore, the chemical solution L2 can be efficiently supplied from the nozzle 52 to the peripheral region K3 of the substrate 9.

另外,根據本實施形態之基板處理裝置,關於噴嘴51、52噴出藥液L1、L2時的各噴出方向u1、u2,自相對於噴嘴51、52而與旋轉軸a1為相反側之各位置於基板9之徑向上觀看,上述各噴出方向u1、u2係自基板9之上方朝向傾斜向下的方向。噴嘴51、52可向液體接觸位置P1、P2更準確地噴出藥液L1、L2。 In addition, according to the substrate processing apparatus of this embodiment, the ejection directions u1 and u2 when the nozzles 51 and 52 eject the chemical liquids L1 and L2 are placed on the opposite sides of the rotation axis a1 with respect to the nozzles 51 and 52. When viewed in the radial direction of the substrate 9, the above-mentioned respective ejection directions u1 and u2 are obliquely downward directions from above the substrate 9. The nozzles 51 and 52 can more accurately eject the liquid medicines L1 and L2 toward the liquid contact positions P1 and P2.

另外,根據以上般之本實施形態之基板處理方法,藥液L1之至少一部分於剛噴擊液體接觸位置P1後,克服作用於該藥液L1的朝向基板9之旋轉方向之下游側的力與離心力此兩種力,自液體接觸位置P1一邊擴展成液膜狀一邊向基板9之旋轉方向上游側且旋轉軸a1側流動,然後通過基板9之中央區域而到達基板9之周緣。藉此,對液體接觸位置P1供給多量之藥液L1,且對基板9之中央部分之各位置供給較液體接觸位置P1更為少量之藥液L1。雖對液體接觸位置P1供給較基板9之中央區域更為多量之藥液L1,但該藥液L1之膜厚容易變得較基板9之中央區域更薄,另一方面,雖對基板9之中央區域供給較液體接觸位置P1更為少量之藥液L1,但該藥液L1的膜厚不易變得較液體接觸位置P1薄。因此,可藉由向液體接觸位置P1噴出藥液L1而提高基板9表面中較液體接觸位置P1更靠基板9之中心c1側之部分中的藥液之膜厚之均勻性。另外,噴出至液體接觸位置P2之藥液L2大部分自液體接觸位置P2一邊擴展成液膜狀,一邊於基板9之周邊區域中向基板9之旋轉方向下游側流動並且到達基板9之周緣部。因此,可對基板9之整個表面供給藥液L1、L2,並且提高供給於較液體接觸位置P1更靠旋轉軸a1側部分、亦即基板9之中央區域及基板9之中間區域中較液體接觸位置P1更靠旋轉軸a1側部分的藥液L1之膜厚之均勻性。 In addition, according to the substrate processing method of this embodiment as described above, at least a portion of the chemical liquid L1 immediately after the liquid contact position P1 is sprayed, overcomes the force acting on the downstream side of the chemical liquid L1 in the direction of rotation of the substrate 9 and These two forces, centrifugal force, flow from the liquid contact position P1 into a liquid film shape while flowing toward the upstream side of the substrate 9 in the direction of rotation and the rotation axis a1 side, and then pass through the central region of the substrate 9 to reach the periphery of the substrate 9. Thereby, a large amount of the chemical liquid L1 is supplied to the liquid contact position P1, and a smaller amount of the chemical liquid L1 is supplied to each position of the central portion of the substrate 9 than the liquid contact position P1. Although a larger amount of the chemical liquid L1 is supplied to the liquid contact position P1 than the central area of the substrate 9, the film thickness of the chemical liquid L1 is likely to be thinner than the central area of the substrate 9. The central region supplies a smaller amount of the chemical solution L1 than the liquid contact position P1, but the film thickness of the chemical solution L1 is less likely to become thinner than the liquid contact position P1. Therefore, the uniformity of the film thickness of the chemical liquid in the portion of the surface of the substrate 9 closer to the center c1 side of the substrate 9 than the liquid contact position P1 can be improved by ejecting the chemical liquid L1 toward the liquid contact position P1. In addition, most of the medicinal liquid L2 ejected to the liquid contact position P2 expands into a liquid film shape from the liquid contact position P2, while flowing toward the downstream side of the rotation direction of the substrate 9 in the peripheral region of the substrate 9 and reaching the peripheral portion of the substrate 9 . Therefore, the chemical liquids L1 and L2 can be supplied to the entire surface of the substrate 9, and the liquid can be supplied to a portion closer to the rotation axis a1 side than the liquid contact position P1, that is, in the central region of the substrate 9 and the intermediate region of the substrate 9 in contact with the liquid. The position P1 depends more on the uniformity of the film thickness of the chemical solution L1 on the side of the rotation axis a1.

詳細示出了本發明並進行描述,但上述描述於所有態樣中係例示而非限定性。因此,本發明可於該發明之範圍內將實施形態適當變形、省略。 The present invention has been shown in detail and described, but the above description is illustrative and not restrictive in all aspects. Therefore, the present invention can appropriately deform and omit the embodiments within the scope of the present invention.

Claims (18)

一種基板處理裝置,係具備:保持構件,能以大致水平姿勢一邊保持一邊旋轉基板;旋轉機構,使前述保持構件以旋轉軸為中心而旋轉;第一噴嘴,自較前述基板更靠上方噴出藥液,以使該藥液噴擊前述基板之旋轉軌跡中的中央區域與周邊區域之間的中間區域中之第一液體接觸位置;以及第二噴嘴,自較前述基板更靠上方噴出前述藥液,以使該藥液噴擊前述中間區域中之第二液體接觸位置;並且,自前述第一噴嘴之上方於前述基板之前述旋轉軸方向上觀看,前述第一噴嘴噴出前述藥液時之噴出方向係含有以下分量之方向:沿著以前述旋轉軸為中心且通過前述第一液體接觸位置的圓在前述第一液體接觸位置之切線方向,且朝向前述基板之旋轉方向上游側的分量;以及沿著與該切線正交的前述基板之徑向,自前述第一液體接觸位置朝向前述旋轉軸的分量;前述第一噴嘴噴出前述藥液時之噴出速度的前述切線方向之速度分量具有以下大小:可克服因前述基板之旋轉而作用於前述第一液體接觸位置上之前 述藥液的朝向前述基板之旋轉方向下游側的力,而使該藥液向前述基板之旋轉方向上游側流動;前述噴出速度的前述徑向之速度分量具有以下大小:可克服作用於前述第一液體接觸位置上之前述藥液的由前述基板之旋轉所致之離心力,而使該藥液向前述旋轉軸側流動;自前述第二噴嘴之上方於前述基板之旋轉軸方向觀看,前述第二噴嘴噴出前述藥液時之噴出方向係含有以下分量之方向:沿著以前述旋轉軸為中心且通過前述第二液體接觸位置的圓在前述第二液體接觸位置之切線方向,且朝向前述基板之旋轉方向下游側的分量。     A substrate processing apparatus includes: a holding member capable of rotating a substrate while holding the substrate in a substantially horizontal posture; a rotating mechanism that rotates the holding member about a rotation axis; and a first nozzle that ejects medicine from above the substrate. Liquid, so that the chemical liquid sprays the first liquid contact position in the intermediate region between the central region and the peripheral region in the rotation track of the substrate; and the second nozzle ejects the chemical liquid from above the substrate So that the chemical liquid sprays the second liquid contact position in the intermediate region; and when viewed from above the first nozzle in the direction of the rotation axis of the substrate, the first nozzle sprays the chemical liquid when it is sprayed. The direction is a direction including a component along a tangential direction of the circle passing through the first liquid contact position at the first liquid contact position and centered on the rotation axis and upstream of the substrate in the rotation direction; and Along the radial direction of the substrate orthogonal to the tangent line, the portion from the first liquid contact position toward the rotation axis ; The speed component in the tangential direction of the ejection speed when the first nozzle ejects the chemical liquid has the following magnitude: it can overcome the direction of the chemical liquid that is acting on the first liquid contact position due to the rotation of the substrate and faces the substrate; The force on the downstream side of the rotation direction causes the medicinal solution to flow toward the upstream side of the substrate in the rotation direction; the radial velocity component of the ejection speed has the following magnitude: the medicine acting on the first liquid contact position can be overcome The centrifugal force of the liquid caused by the rotation of the substrate causes the chemical solution to flow toward the rotation axis side; when viewed from above the second nozzle in the direction of the rotation axis of the substrate, The ejection direction is a component including a component along the tangential direction of the circle passing through the second liquid contact position centered on the rotation axis and passing through the second liquid contact position, and facing the downstream side of the substrate in the rotation direction.     如請求項1所記載之基板處理裝置,其中前述第一噴嘴噴出之前述藥液之前述第一液體接觸位置、與前述第二噴嘴噴出之前述藥液之前述第二液體接觸位置係距前述旋轉軸為相同距離。     The substrate processing apparatus according to claim 1, wherein the first liquid contact position of the chemical liquid ejected by the first nozzle and the second liquid contact position of the chemical liquid ejected by the second nozzle are separated from the rotation The axes are the same distance.     如請求項1所記載之基板處理裝置,其中藉由前述第一噴嘴噴出之前述藥液之前述第一液體接觸位置、與前述基板之周緣中最接近前述第一液體接觸位置之點的中點來定義關注中點時,前述第二噴嘴噴出之前述藥液之前述第二液體接觸位置係較前述第一液體接觸位置更遠離前述旋轉軸且較前述關注中點更接近前述旋轉軸。     The substrate processing apparatus according to claim 1, wherein a midpoint between the first liquid contact position of the chemical liquid ejected by the first nozzle and a point closest to the first liquid contact position on a periphery of the substrate When defining the center of attention, the second liquid contact position of the chemical liquid ejected by the second nozzle is farther from the rotation axis than the first liquid contact position and closer to the rotation axis than the center point of interest.     如請求項1至3中任一項所記載之基板處理裝置,其中前述第一噴嘴噴出之前述藥液之前述第一液體接觸位置、與前述第二噴嘴噴出之前述藥液之前述第二液體接觸位置係於形成前述基板之直徑的同一直線上分別位於將前述旋轉軸夾持於彼此之間的位置。     The substrate processing apparatus according to any one of claims 1 to 3, wherein the first liquid contact position of the chemical liquid ejected by the first nozzle and the second liquid of the chemical liquid ejected by the second nozzle The contact positions are located on the same straight line forming the diameter of the substrate, and the positions are sandwiched between the rotation axes.     如請求項1至3中任一項所記載之基板處理裝置,其中前述第二噴嘴噴出之前述藥液之前述第二液體接觸位置係位於前述第一噴嘴噴出之前述藥液自前述第一液體接觸位置向周圍擴展而形成於前述基板上的液膜之上。     The substrate processing apparatus according to any one of claims 1 to 3, wherein the second liquid contact position of the chemical liquid ejected by the second nozzle is located at the chemical liquid ejected by the first nozzle from the first liquid The contact position spreads around and is formed on the liquid film on the substrate.     一種基板處理裝置,係具備:保持構件,能以大致水平姿勢一邊保持一邊旋轉基板;旋轉機構,使前述保持構件以旋轉軸為中心而旋轉;第一噴嘴,自較前述基板更靠上方噴出藥液,以使該藥液噴擊前述基板之旋轉軌跡中的中央區域與周邊區域之間的中間區域中之第一液體接觸位置;以及第二噴嘴,自較前述基板更靠上方噴出前述藥液,以使該藥液噴擊前述中間區域中之第二液體接觸位置;並且,前述第一噴嘴係以如下方式噴出前述藥液:剛噴擊前述第一液體接觸位置後自前述第一液體 接觸位置流向前述旋轉軸側的前述藥液之量,多於剛噴擊前述第一液體接觸位置後自前述第一液體接觸位置流向與前述旋轉軸相反之側的前述藥液之量;自前述第二噴嘴之上方於前述基板之旋轉軸方向上觀看,前述第二噴嘴噴出前述藥液時之噴出方向係含有以下分量之方向:沿著以前述旋轉軸為中心且通過前述第二液體接觸位置的圓在前述第二液體接觸位置的切線方向,且朝向前述基板之旋轉方向下游側的分量。     A substrate processing apparatus includes: a holding member capable of rotating a substrate while holding the substrate in a substantially horizontal posture; a rotating mechanism that rotates the holding member about a rotation axis; and a first nozzle that ejects medicine from above the substrate. Liquid, so that the chemical liquid sprays the first liquid contact position in the intermediate region between the central region and the peripheral region in the rotation track of the substrate; and the second nozzle ejects the chemical liquid from above the substrate So that the chemical liquid sprays the second liquid contact position in the intermediate region; and the first nozzle sprays the chemical liquid in the following manner: immediately after the first liquid contact position is sprayed, the first liquid contacts the first liquid contact position. The amount of the chemical solution flowing toward the rotation axis side from the position is greater than the amount of the chemical solution flowing from the first liquid contact position to the side opposite to the rotation axis immediately after the first liquid contact position is sprayed; When viewed from above the two nozzles in the direction of the rotation axis of the substrate, the ejection direction when the second nozzle ejects the chemical solution contains the following components Direction: the component along the tangential direction of the circle passing through the second liquid contact position centered on the rotation axis and passing through the second liquid contact position, and facing the downstream side of the rotation direction of the substrate.     如請求項1或6所記載之基板處理裝置,其中前述第二噴嘴噴出之前述藥液之流量多於前述第一噴嘴噴出之前述藥液之流量。     The substrate processing apparatus according to claim 1 or 6, wherein a flow rate of the chemical solution ejected by the second nozzle is greater than a flow rate of the chemical solution ejected by the first nozzle.     如請求項1或6所記載之基板處理裝置,其中自前述第二噴嘴之上方於前述基板之旋轉軸方向上觀看,前述第二噴嘴噴出前述藥液時之噴出方向係含有以下分量之方向:沿著以前述旋轉軸為中心且通過前述第二液體接觸位置的圓在前述第二液體接觸位置的切線方向,且朝向前述基板之旋轉方向下游側的分量;以及沿著與該切線正交的前述基板之徑向,自前述第二液體接觸位置朝向與前述旋轉軸相反之側的分量。     The substrate processing apparatus according to claim 1 or 6, wherein the second nozzle is viewed from above the second nozzle in the direction of the rotation axis of the substrate, and the discharge direction when the second nozzle discharges the chemical solution is a direction containing the following components: A component along a tangential direction of the circle passing through the second liquid contact position centered on the rotation axis and passing through the second liquid contact position toward the downstream side of the rotation direction of the substrate; and along a line orthogonal to the tangent line A component of a radial direction of the substrate from the second liquid contact position toward a side opposite to the rotation axis.     如請求項1或6所記載之基板處理裝置,其中關於前述第一噴嘴與前述第二噴嘴之各噴嘴噴出前述藥液時之各噴出方向,自相對於前述各噴嘴而與前述旋轉軸為相反側之各位置於前述基板之徑向上觀看,前述 各噴出方向係自前述基板之上方朝向傾斜向下的方向。     The substrate processing apparatus according to claim 1 or 6, wherein each of the ejection directions when each of the first nozzle and the second nozzle ejects the chemical liquid is opposite to the rotation axis with respect to the nozzles. Each side of the substrate is viewed in a radial direction of the substrate, and each of the ejection directions is an oblique downward direction from above the substrate.     一種基板處理方法,係具備:旋轉步驟,一邊以大致水平姿勢保持基板一邊使該基板以旋轉軸為中心而旋轉;第一噴出步驟,與前述旋轉步驟並行,自較前述基板更靠上方噴出藥液,以使該藥液噴擊前述基板之旋轉軌跡中的中央區域與周邊區域之間的中間區域中之第一液體接觸位置;以及第二噴出步驟,與前述旋轉步驟及前述第一噴出步驟並行,自較前述基板更靠上方噴出前述藥液,以使該藥液噴擊前述中間區域中之第二液體接觸位置;並且,前述第一噴出步驟中噴出之前述藥液之噴出方向係自上方於前述旋轉軸方向上觀看該藥液而含有以下分量之方向:沿著以前述旋轉軸為中心且通過前述第一液體接觸位置的圓在前述第一液體接觸位置之切線方向,且朝向前述基板之旋轉方向上游側的分量;以及沿著與前述切線正交的前述基板之徑向,自前述第一液體接觸位置朝向前述旋轉軸的分量;前述第一噴出步驟中噴出之前述藥液之噴出速度的前述切線方向之速度分量具有以下大小:可克服因前述基板之旋轉而作用於前述第一液體接觸位置 上之前述藥液的朝向前述基板之旋轉方向下游側的力,而使該藥液向前述基板之旋轉方向上游側流動;前述噴出速度的前述徑向之速度分量具有以下大小:可克服作用於前述第一液體接觸位置上之前述藥液的由前述基板之旋轉所致之離心力,使該藥液向前述旋轉軸側流動;前述第二噴出步驟中噴出之前述藥液之噴出方向係自上方於前述旋轉軸方向上觀看該藥液而含有以下分量:沿著以前述旋轉軸為中心且通過前述第二液體接觸位置的圓在前述第二液體接觸位置之切線方向,且朝向前述基板之旋轉方向下游側的分量。     A substrate processing method includes a rotation step of rotating a substrate around a rotation axis while holding the substrate in a substantially horizontal posture, and a first ejection step, in parallel with the rotation step, ejecting medicine from above the substrate. Liquid, so that the chemical liquid sprays the first liquid contact position in the intermediate region between the central region and the peripheral region in the rotation track of the substrate; and a second spraying step, the rotation step, and the first spraying step In parallel, the chemical solution is ejected from above the substrate so that the chemical solution sprays the second liquid contact position in the intermediate region; and the ejection direction of the chemical solution ejected in the first ejection step is from The direction in which the medicinal solution is viewed from above in the direction of the rotation axis contains the following components: along the tangent direction of the circle passing through the first liquid contact position centered on the rotation axis and passing through the first liquid contact position, and facing the aforementioned The component on the upstream side of the rotation direction of the substrate; and along the radial direction of the substrate orthogonal to the tangent, from the first The component of the liquid contact position facing the rotation axis; the speed component of the tangential direction of the spray speed of the chemical liquid sprayed in the first spraying step has the following size: it can overcome the first liquid contact due to the rotation of the substrate The position of the medicinal solution toward the downstream side of the substrate in the direction of rotation causes the medicinal fluid to flow toward the upstream side of the substrate in the direction of rotation; the radial velocity component of the ejection speed has the following magnitude: can overcome the effect The centrifugal force of the chemical solution at the first liquid contact position caused by the rotation of the substrate causes the chemical solution to flow toward the rotation axis side; the spray direction of the chemical solution sprayed in the second spraying step is from The medicinal solution is viewed from above in the direction of the rotation axis and contains the following components: along a tangential direction of the circle passing through the second liquid contact position centered on the rotation axis and passing through the second liquid contact position, and toward the substrate The component on the downstream side of the rotation direction.     如請求項10所記載之基板處理方法,其中前述第一噴出步驟中噴出之前述藥液之前述第一液體接觸位置、與前述第二噴出步驟中噴出之前述藥液之前述第二液體接觸位置係距前述旋轉軸為相同距離。     The substrate processing method according to claim 10, wherein the first liquid contact position of the chemical liquid ejected in the first ejection step and the second liquid contact position of the chemical liquid ejected in the second ejection step The system is the same distance from the aforementioned rotation axis.     如請求項10所記載之基板處理方法,其中藉由前述第一噴出步驟中噴出之前述藥液之前述第一液體接觸位置、與前述基板之周緣中最接近前述第一液體接觸位置之點的中點來定義關注中點時,前述第二噴出步驟中噴出之前述藥液之前述第二液體接觸位置係較前述第一液體接觸位置更遠離前述旋轉軸且較前述關注中點更接近前述旋轉軸。     The substrate processing method according to claim 10, wherein the contact point between the first liquid contact position and the point closest to the first liquid contact point in the periphery of the substrate is obtained by the first liquid contact position of the chemical liquid ejected in the first ejection step. When the midpoint is defined by the midpoint, the second liquid contact position of the medicinal solution sprayed in the second spraying step is farther from the rotation axis than the first liquid contact position and closer to the rotation than the midpoint of attention. axis.     如請求項10至12中任一項所記載之基板處理方法,其中前述第一噴出步驟中噴出之前述藥液之前述 第一液體接觸位置、與前述第二噴出步驟中噴出之前述藥液之前述第二液體接觸位置係於形成前述基板之直徑的同一直線上分別位於將前述旋轉軸夾持於彼此之間的位置。     The substrate processing method according to any one of claims 10 to 12, wherein the first liquid contact position of the chemical liquid sprayed in the first spraying step and the chemical liquid that is sprayed in the second spraying step are The second liquid contact positions are located on the same straight line forming the diameter of the substrate, and the positions are sandwiched between the rotation shafts.     如請求項10至12中任一項所記載之基板處理方法,其中前述第二噴出步驟中噴出之前述藥液之前述第二液體接觸位置係位於前述第一噴出步驟中噴出之前述藥液自前述第一液體接觸位置向周圍擴展而形成於前述基板上的液膜之上。     The substrate processing method according to any one of claims 10 to 12, wherein the second liquid contact position of the chemical liquid ejected in the second ejecting step is located at the position where the chemical liquid ejected in the first ejecting step is The first liquid-contacting position spreads around and is formed on a liquid film on the substrate.     一種基板處理方法,係具備:旋轉步驟,一邊以大致水平姿勢保持基板一邊使該基板以旋轉軸為中心而旋轉;第一噴出步驟,與前述旋轉步驟並行,自較前述基板更靠上方噴出藥液,以使該藥液噴擊前述基板之旋轉軌跡中的中央區域與周邊區域之間的中間區域中之第一液體接觸位置;以及第二噴出步驟,與前述旋轉步驟及前述第一噴出步驟並行,自較前述基板更靠上方噴出前述藥液,以使藥液噴擊前述中間區域中之第二液體接觸位置;並且,前述第一噴出步驟係以如下方式噴出前述藥液:剛噴擊前述第一液體接觸位置後自前述第一液體接觸位置流向前述旋轉軸側的前述藥液之量,多於剛噴擊前述第一液體接觸位置後自前述第一液體接觸位置流向與前述旋轉軸相反之側的前述藥液之量; 前述第二噴出步驟中噴出的前述藥液之噴出方向係自上方於前述旋轉軸方向上觀看該藥液而含有以下分量之方向:沿著以前述旋轉軸為中心且通過前述第二液體接觸位置的圓在前述第二液體接觸位置之切線方向,且朝向前述基板之旋轉方向下游側的分量。     A substrate processing method includes a rotation step of rotating a substrate around a rotation axis while holding the substrate in a substantially horizontal posture, and a first ejection step, in parallel with the rotation step, ejecting medicine from above the substrate. Liquid, so that the chemical liquid sprays the first liquid contact position in the intermediate region between the central region and the peripheral region in the rotation track of the substrate; and a second spraying step, the rotation step, and the first spraying step In parallel, the chemical solution is ejected from above the substrate so that the chemical solution sprays the second liquid contact position in the intermediate region; and the first ejection step is to eject the chemical solution as follows: The amount of the medicinal liquid flowing from the first liquid contact position to the rotation axis side after the first liquid contact position is greater than that from the first liquid contact position to the rotation axis immediately after the first liquid contact position is sprayed. The amount of the chemical liquid on the opposite side; the discharging direction of the chemical liquid discharged in the second discharging step is from above to above The medicinal solution is viewed in the direction of the rotation axis and contains the following components: along the tangent direction of the circle passing through the second liquid contact position centered on the rotation axis and passing through the second liquid contact position, and rotating toward the substrate The component on the downstream side.     如請求項10或15所記載之基板處理方法,其中前述第二噴出步驟中噴出之前述藥液之流量多於前述噴出步驟中噴出之前述藥液之流量。     The substrate processing method according to claim 10 or 15, wherein a flow rate of the chemical solution ejected in the second ejection step is greater than a flow rate of the chemical solution ejected in the ejection step.     如請求項10或15所記載之基板處理方法,其中前述第二噴出步驟中噴出之前述藥液之噴出方向係自上方於前述旋轉軸方向上觀看該藥液而含有以下分量之方向:沿著以前述旋轉軸為中心且通過前述第二液體接觸位置的圓在前述第二液體接觸位置之切線方向,且朝向前述基板之旋轉方向下游側的分量;以及沿著與該切線正交的前述基板之徑向,自前述第二液體接觸位置朝向與前述旋轉軸相反之側的分量。     The substrate processing method according to claim 10 or 15, wherein the ejection direction of the chemical solution ejected in the second ejecting step is a direction in which the chemical solution is viewed from above in the direction of the rotation axis and contains the following components: along A component of the circle having the rotation axis as the center and passing through the second liquid contact position in a tangential direction of the second liquid contact position and facing the downstream side of the rotation direction of the substrate; and along the substrate orthogonal to the tangent The component in the radial direction from the second liquid contact position toward the side opposite to the rotation axis.     如請求項10或15所記載之基板處理方法,其中關於前述第一噴出步驟及前述第二噴出步驟之各噴出步驟中噴出前述藥液時之各噴出方向,自相對於前述各噴出步驟中噴出的各藥液而與前述旋轉軸相反之側於前述基板之徑向上觀看前述各藥液,前述各噴出方向係自前述基板之上方朝向傾斜向下的方向。     The substrate processing method according to claim 10 or 15, wherein the ejection directions when the chemical solution is ejected in each of the ejection steps of the first ejection step and the second ejection step are ejected relative to the ejection steps. Each of the chemical liquids is viewed from the side of the substrate opposite to the rotation axis in the radial direction of the substrate, and each of the ejection directions is an oblique downward direction from above the substrate.    
TW106140563A 2017-02-09 2017-11-22 Substrate processing apparatus and substrate processing method TWI686243B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-022006 2017-02-09
JP2017022006A JP6812262B2 (en) 2017-02-09 2017-02-09 Substrate processing equipment and substrate processing method

Publications (2)

Publication Number Publication Date
TW201829073A true TW201829073A (en) 2018-08-16
TWI686243B TWI686243B (en) 2020-03-01

Family

ID=63107352

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106140563A TWI686243B (en) 2017-02-09 2017-11-22 Substrate processing apparatus and substrate processing method

Country Status (5)

Country Link
JP (1) JP6812262B2 (en)
KR (1) KR102269436B1 (en)
CN (1) CN110192267B (en)
TW (1) TWI686243B (en)
WO (1) WO2018146897A1 (en)

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4931285B2 (en) * 2000-04-20 2012-05-16 アイメック Method and apparatus for localized liquid treatment of the surface of a substrate
JP2005138053A (en) * 2003-11-07 2005-06-02 Sumitomo Precision Prod Co Ltd Substrate washing apparatus
JP4451175B2 (en) * 2004-03-19 2010-04-14 大日本スクリーン製造株式会社 Nozzle cleaning apparatus and substrate processing apparatus
JP4347765B2 (en) * 2004-07-21 2009-10-21 大日本スクリーン製造株式会社 Substrate processing equipment
JP2006120666A (en) * 2004-10-19 2006-05-11 Dainippon Screen Mfg Co Ltd Substrate-treating device
JP2007237363A (en) * 2006-03-10 2007-09-20 Komatsu Machinery Corp Substrate surface machining apparatus
JP2008098227A (en) * 2006-10-06 2008-04-24 Dainippon Screen Mfg Co Ltd Substrate processing apparatus
JP5516447B2 (en) * 2011-02-08 2014-06-11 東京エレクトロン株式会社 Liquid processing apparatus, liquid processing method, and storage medium
JP6265702B2 (en) * 2012-12-06 2018-01-24 株式会社荏原製作所 Substrate cleaning apparatus and substrate cleaning method
JP2015015284A (en) * 2013-07-03 2015-01-22 株式会社荏原製作所 Substrate cleaning device and substrate cleaning method
JP6298277B2 (en) * 2013-12-03 2018-03-20 株式会社Screenホールディングス Substrate processing equipment
JP5994804B2 (en) * 2014-03-17 2016-09-21 東京エレクトロン株式会社 Substrate cleaning method
JP6600470B2 (en) 2014-04-01 2019-10-30 株式会社荏原製作所 Cleaning device and cleaning method
JP6375160B2 (en) * 2014-07-08 2018-08-15 株式会社Screenホールディングス Substrate processing method
US9460944B2 (en) * 2014-07-02 2016-10-04 SCREEN Holdings Co., Ltd. Substrate treating apparatus and method of treating substrate
KR102285832B1 (en) * 2014-07-25 2021-08-05 삼성전자주식회사 Apparatus and methods for treating substrates
US10037902B2 (en) * 2015-03-27 2018-07-31 SCREEN Holdings Co., Ltd. Substrate processing device and substrate processing method

Also Published As

Publication number Publication date
KR102269436B1 (en) 2021-06-24
TWI686243B (en) 2020-03-01
CN110192267A (en) 2019-08-30
CN110192267B (en) 2023-03-17
KR20190094427A (en) 2019-08-13
JP2018129422A (en) 2018-08-16
JP6812262B2 (en) 2021-01-13
WO2018146897A1 (en) 2018-08-16

Similar Documents

Publication Publication Date Title
US11380562B2 (en) Substrate processing apparatus
TWI620238B (en) Substrate processing method and substrate processing device
TWI313624B (en) Substrate processing apparatus and substrate processing method
TWI524400B (en) Substrate processing apparatus and substrate processing method
CN104051304A (en) Substrate treatment apparatus and substrate treatment method
KR20140000158A (en) Substrate processing apparatus, substrate processing method and non-transitory computer-readable storage medium
US10279368B2 (en) Coating method and coating apparatus
KR20090029958A (en) Method of processing a substrate, spin unit and apparatus of processing a substrate having the same
KR101950047B1 (en) Substrate cleaning and drying method and substrate developing method
US20140251539A1 (en) Substrate processing apparatus and substrate processing method
TW201829073A (en) Substrate processing apparatus and substrate processing method
JP2017011015A (en) Substrate processing apparatus
JP6298277B2 (en) Substrate processing equipment
JP2007048814A (en) Substrate holding device, semiconductor manufacturing apparatus and method of manufacturing semiconductor device
TWI395282B (en) Substrate processing apparatus and substrate processing method
TW202141576A (en) Cleaning jig and cleaning method, and coating device
JP6211910B2 (en) Substrate processing apparatus and substrate processing method
JP4057367B2 (en) Spin processing apparatus and spin processing method
JP5199419B2 (en) Substrate processing apparatus and substrate processing method
JP2002177854A (en) Substrate treatment apparatus
JP6803736B2 (en) Board processing equipment
TW200913027A (en) Method and apparatus for drying a substrate surface
JP6376863B2 (en) Substrate processing equipment
JP6649837B2 (en) Substrate processing apparatus and substrate processing method
JP2002011420A (en) Device for treating substrate