TW201214549A - Substrate processing apparatus - Google Patents

Substrate processing apparatus Download PDF

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Publication number
TW201214549A
TW201214549A TW100120645A TW100120645A TW201214549A TW 201214549 A TW201214549 A TW 201214549A TW 100120645 A TW100120645 A TW 100120645A TW 100120645 A TW100120645 A TW 100120645A TW 201214549 A TW201214549 A TW 201214549A
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Taiwan
Prior art keywords
substrate
main surface
nozzle
portions
liquid
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TW100120645A
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Chinese (zh)
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TWI443734B (en
Inventor
Yukio Tomifuji
Shigeki Minami
Kazuto Ozaki
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Dainippon Screen Mfg
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching

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  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Liquid Crystal (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Nozzles (AREA)
  • Spray Control Apparatus (AREA)

Abstract

The present invention provides a substrate processing apparatus that realizes the coverage of uniformity of wet-processing the entire surface on the main surface of a substrate to achieve the increasing of the process yield and the quality improvement. The substrate processing apparatus comprises spraying tube portions 22; and a plurality of spraying nozzles 14, composed of a plurality of spraying nozzle portions 24 disposed toward a length direction of the spray tube portions 22 in the form of mutual approach at a row and spraying liquor on the surface 102 of a substrate W through the spraying ports 26 thereof. Furthermore, the plurality of spraying nozzle portions 24 are disposed at the spraying tube portions 22 in the facing angle of the spraying ports 26 of the plurality of spraying nozzle portions 24 with respect to the surface 102 of the substrate W, toward the oblique lower direction of the surface 102 of the substrate W that is transported in an oblique gesture, from the vicinity of the oblique upper part to the vicinity of the oblique lower part of the surface 102 of the substrate W, and in a gradually decrement way related to the normal 300 of the surface 102 of the substrate W. Accordingly, the flowing velocity of the sprayed liquor on the surface 102 of the substrate W will decrease near the oblique upper part and relatively increase near the oblique lower part.

Description

201214549 六、發明說明： 【發明所屬之技術領域】 本發明，係關於一種對用於液晶顯示裝置（LCD，Liquid201214549 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a pair of liquid crystal display devices (LCD, Liquid)

Crystal Display)、電漿顯示器（pdp，Plasma Display Panel)、 有機發光一極體(OLED，Organic Light Emitting Diode)、場 發射顯示器（FED ’ Field Emission Display)、真空螢光顯示 器（VFD，Vacuum Fluorescent Displays)、太陽電池板等之玻 璃基板、用於磁/光碟之玻璃/陶瓷基板、以及半導體晶圓、 電子元件基板荨各種基板，噴出純水等洗淨液、钱刻液、顯 像液、光阻劑剝離液等藥液等之各種處理液，而對基板進行 濕式處理之基板處理裝置。 【先前技術】 習知作為此種類之基板處理裝置，已知有藉由沿基板之搬 送方向並列設置之搬送輥等，於濕式處理室内一邊以相對於 水平面朝與基板搬送方向正交之方向傾斜特定角度之姿勢 搬送基板…邊自賴喷嘴對基板之表面以朗狀噴出處理 液，藉此進行特定之基板處理^於如此之基板處理裝置中， •對應處理之種類，使純水等洗淨液、蝕刻液、顯影^、光阻 劑剝離液等藥液等各種處理液自噴灑喷嘴喷出至基板之表 面。 然後，如此之基板處理裝置，係為了將處理液均勻地供給 至整個基板表面，而使由在沿著基板搬送方向之方向延伸2 100120645 1 201214549 喷灑管部、以及以沿著喷灑管部之長度方向於一行上相互接 近之形狀設置之複數個喷嘴部所構成之噴灑喷嘴，沿著與複 數個基板搬送方向交叉之方向以等間距相互平行地配置，且 使處理液自複數個喷嘴部喷出至基板之表面。 而且，使用將喷灑喷嘴之喷灑管部，以其長度方向之中心 軸為中心往復轉動，而改變處理液之噴出方向之喷灑管部往 復轉動型之基板處理裝置（例如’參照專利文獻1段落編號 [0040]至[0041]，圖 2 至圖 4) ° [先行技術文獻] [專利文獻] 專利文獻1 :曰本專利特開20〇〇— 188272號公報 【發明内容】 (發明所欲解決之問題） 圖5，係表示透過習知之喷灑管部往復轉動型基板處理裝 置之藥液供給情況之模式圖。 於此暴板慝理衮置ί ------ 丨久 __________ 於圖式之平面直角方向）並列設置之複數個搬送輥（未圖 示），而以相對於水平面200沿著與基板搬送方向正交之方 向傾斜特疋肖度之姿勢搬送基板w。然後，使由在沿著基 板搬送方向之方向延伸之錢管部(未料）、纽以沿著喷 灑官部之長度方向於—杆 ^ 上相互接近之形狀設置之複數個 喷嘴部100所構成之噴灑 、麗嘴S*’沿者與複數個基板搬送方向 100120645 201214549 交叉之方向以等間1巨4目、， 之狀態、與如圖~ 相對於基板，各嘴灑管部 心衣面1〇2 102之狀態之間反覆地進行; 嘴部100之噴出口川 复轉動， 朝向基板W之表面102之噴出 圖6,係表不错由圖5所圖示之基板處理裝置而噴出方向。 液之於傾斜姿勢之基板w之表面 噴出之藥 面102 噴麗管部之轉動機構地進行配置，且藉由連結於各 中心，使各噴灑管部:不），而以各賴管部之中心轴為 自之喷出口 104朝向;如圖5⑷所示將各噴嘴部100各 之表面服之法線3Gm之傾斜下端方向相•基板W 之狀態、與如圖定角度例如4G°對向於表 100 D 104 之噴出 之去線300以例如〇。對向於表 面改變藥液自各噴 102上的位置歲、、* 細表，表示物之藥液於基板心= 上之抓速，杈軸係表不以傾斜姿勢之基板w之傾斜上端 原點至傾斜下端為止的位置。於圖6中，描繪方形點之線 106，係表示各喷出口 104分別於圖5(a)之狀態下所噴出之 藥液於基板W之表面1〇2上的位置與流速之關係，圓形點 108係表示在圖5(b)之狀態下所噴出之藥液於基板w之表 面102上的位置與流速之關係。 由圖5及圖6可明確得知’各噴嘴部100各自之喷出口 104,朝向基板W之傾斜下端方向相對於基板W之表面1〇2 之法線300無論在以40°對向於表面1〇2之狀態下，抑或在 以0。對向於表面102之狀態下，塗佈液之流速於基板W之 100120645 5 201214549 傾斜上端部附近皆如箭頭A及A，所示相對地變小，而㈣ ..近傾斜下端部㈣⑼胸Μ叫利目雜變得越大， 故可自傾斜姿勢之基板表面102上之位置確認所產生之塗 佈液之流速差。再者，箭頭之大小係表示流速之大小。如此， 若塗佈液之流速產生差距，狀例如使用如侧處理之_ 液的藥液處理時’偏m度將產生以，㈣致處理後之圖 案線寬不均’將導致良率低下或品質劣化之結果。 本發明’係鐾於以上之情況研製而成者，其°目的在於提供 一種當將處理液喷出至以傾斜轉所支持之基板之主面上 時，減小所喷出之處理液於基板主面上流速之差距，藉由促 進基板主面之整個面的流速之均勻化，可實現涵蓋基板主面 之整個面之濕式處理之均勻化，藉此達成處理之良率提昇及 品質改善之基板處理裝置。 (解決問題之手段） 第^發明之基板處理裝置，其係包含：濕式處理室’其對 2板進行赋處理；基板㈣手段，其配設於上述濕式處理 室内’以使基板相對於水平面朝與基板搬送方向正交之方向 傾斜特定肖度之姿勢，於水平方向搬送基板；以及處理液供 給手段，其將處理液供給至藉由配設於上述濕式處理室内之 基板搬送手段所搬送之基板之主面；上述處理液供給手段， 係具備々著與基板搬送方向交又之方向以等間距相互平行 地配置且將處理液喷出至基板主面之複數個喷麗喷嘴，各上 100120645 201214549 述複數個喷灑喷嘴，係由沿著上述基板搬送方向之方向延伸 之喷灑管部、以及以沿該喷灑管部之長度方向於一行上相互 接近之形狀設置並將處理液自其喷出口噴出至基板主面的 複數個喷嘴部所構成’上述基板處理裝置之特徵在於，將對 於基板之主面之上述複數個喷嘴部之喷出口之對向角度，朝 向以傾斜之姿勢所搬送之基板主面的傾斜下端方向，自基板 ^ 主面之傾斜上端部附近直至傾斜下端部附近，以相對於基板 主面之法線逐漸遞減之方式，將上述複數個喷嘴部設置於上 述複數個噴灑管部，藉此於基板之主面上使噴出後之處理液 之流速於上述傾斜上端部附近相對地變小，而於上述傾斜下 端部附近相對地變大。 第2發明’係如第1發明之基板處理裝置，其中，沿著與 基板搬送方向交叉之方向以等間距所配置之上述複數個噴 灑噴嘴之上述複數個喷嘴部，係於該交叉方向以交錯狀進行 配置。 第3發明，係如第丨發明之基板處理裝置，其中，進一步 包含連結於各上述喷灑管部之轉動手段，且藉由該轉動手段 • 而以各上述喷灑管部之中心軸為中心，使各上述喷灑管部朝 * 向基板主面之傾斜上端方向一致地以特定角度進行轉動後 再進行復原轉動，並一面反覆進行該轉動之往復動作，一面 改變來自各上述喷嘴部之各上述喷出口處理液朝基板主面 的喷出方向。 100120645 201214549 第4發明，係如第i發明之基板處理裝置，其中，自上述 複數個噴嘴部之喷出口所喷出之處理液之喷出量係為相等。 第5發明，係如第1至第4發明之基板處理裝置，其中， 自上述複數個噴嘴部之喷出口所喷出之處理液係為|虫刻液。 (發明效果） 於第1發明之基板處理裝置中，使對於基板之主面的複數 個喷嘴部之噴出口對向角度，朝向以傾斜之姿勢所搬送之基 板主面的傾斜下端方向，自基板主面之傾斜上端部附近直至 傾斜下端部附近，以相對於基板主面之法線逐漸遞減之形狀 之方式’將複數個噴嘴部設置於複數個喷灑管部。因此，於 基板W之主面上喷出後進行流動之處理液，係於傾斜上端 部附近及傾斜下端部附近藉由流速差之減小而於基板主面 上之整個面促進流速之均勻化，而可涵蓋基板主面之整個面 實現處理之均勻化。 於第2發明之基板處理裝置中，沿與基板搬送方向交又之 方向以等間距所配置之複數個喷灑噴嘴之複數個喷嘴部，係 沿3玄交又方向以交錯狀配置。因此，來自各喷嘴部之處理液 噴出流之相互干擾減少，藉此於基板主面上之整個面進一步 促進速之均勻化，而可涵蓋基板主面之整個面實現更有效 之處理之岣勻化。 於第3發明之基板處理裝置中，藉由轉動手段而以各嘴灑 管部之中心軸為中心使各喷灑管部朝向基板主面之傾斜上 100120645 8 201214549 螭方向致地以特定角度轉動後進行復原轉動，且一面反覆 該轉動之往復動作，—面改變來自各喷嘴部之各喷出口之處 理液朝基板主面的噴出方向。因此，可一面於基板w之主 面上以口疋水準維持喷出處理液流速之均勻化，一面實現濕 式處理之迅速化。 » 於第4發明之基板處理裝置中，無須用以將來自各喷嘴部 « 之噴出I以於噴出後促進處理液流速之均勻化之方式進行 调整之繁項之機構等，藉此可實現設計成本之低廉化。 於第5發明之基板處理裝置中，可減小於基板主面上之傾 斜上端部附近與傾斜下端部附近之蝕刻率之差距，而可有效 地提升主面上之整個面祕刻率之均句化。藉此，可達成触 刻處理後之圖案的線寬等之均勻化之提昇。 【實施方式】 明 面參照圖式一面針對本發明之實施形態進行額 圖1 ’係以圖解表示本發明實施形態之基板處理裝置i 此基板處理裝i卜係具備藥液處理室10,其噴出姓; ^、顯影液、光阻劑剝離液等藥液，並對基板％進行藥; 地理，複數個搬送|昆(未圖示），其於藥液處理室内一, 勢线基—面朝水付向x進行往復移動 =貝丁槽12，其儲存藥液；複數個喷灑噴嘴14，其 条液育出至基板w之表面1G2;送液泵16;以及藥液… 100120645 201214549 道18—，其將儲存於藥液貯槽12之藥液輸送至喷灑嗔嘴14。 喷=喷嘴14 ’係於藥液處理室1()内沿著與基板搬送方向 圖2)交又之方向以等間距相互平行地配設，各喷灑 喷紫 係' 由在沿著基板搬送方向X之方向延伸之喷灑管 部22(參照圖2)、以及以沿著此噴灑管部22之長度方向於 一订上相互接近之形歧置·1•將藥液自其喷出口 26(參照圖 ())噴，至基板W之表面1〇2之複數個喷嘴部％所構成。 二藥液處理至1G之底部’設置有用以將向下流至藥液 之内底敎使衫畢之藥㈣ill的循環排水道 ，且循環排水道2〇,係、連接於藥液貯槽& …於具有上述構成之基板處理裝置丨中，首先，—面利用搬 达轉，以相對於水平面期朝與基板搬送方向X正交之方 向領斜特疋角度之姿勢支持自藥液處理室1G之基板搬入口 j未圖示)搬人至藥液處理室1G内之基板w並朝水平方向往 復移動’―面藉由送麟16之驅㈣經由藥賴給道18 將儲存於藥液貯槽12之藥液輸送至喷灑嗜嘴14,且分別自 喷噴嘴14之各喷嘴部24將等量之藥液噴出至基板w之 表面102 ’藉此進行藥液處理。 完成藥液處理之基板W，係藉由搬送親自藥液處理室1〇 之基板搬出口（未圖示)搬出。自基板W之表面102向下流 而且流至藥液處理室1G之内底部之藥液’係經由循環排水 道20回收至藥液貯槽12。 100120645 201214549 圖2，係用以說明於本發明實施形態的基板處理裝置中， 相對於基板W之表面1〇2以形狀設置於構成喷灑喷嘴14之 喷灑管部22之喷嘴部24的噴出口 26之對向角度的示意 圖’圖2(a)為其俯視圖’而圖2(b)為其剖面圖。 噴灑喷嘴14,係於藥液處理室10内沿著與基板搬送方向 X父又之方向以荨間距相互平行地配設，各喷邋喷嘴14， 係由在沿著基板搬送方向X之方向延伸之喷灑管部22、以 及以沿著此喷灑管部22之長度方向於一行上相互接近之形 狀設置且將藥液自其噴出口 26噴出至基板W之表面1〇2之 複數個喷嘴部24所構成。 如圖2(a)及圖2(b)所示，複數個、於本實施形態則為8個 噴灑喷嘴14a至14h係沿著與基板搬送方向χ交又之方向 以等間距相互平行地配設。喷灑喷嘴14a至14h，係分別由 在沿著基板搬送方向χ之方向延伸之喷灑管部22a至22h、 以及以沿著各喷灑管部22a至22h之長度方向於一行上相互 接近之形狀設置之複數個嘴嘴部24所構成。 然後，將相對於以傾斜姿勢所搬送之基板w之表面1〇2 . 的複數個喷嘴部24之噴出口 26之對向角度朝向基板⑺之 ‘ 表面1〇2的傾斜下端方向，自傾斜上端部附近至傾斜下端部 附近以相對於基板W之表面102之法線3〇〇逐漸遞減之方 式，將噴嘴部24設置於各噴灑管部22a至22h，而且此等 喷嘴部24 ’係如圖2(a)所示沿與基板搬送方向χ交又之方 100120645 201214549 向以交錯狀配置。 圖2(b) ’得'例示於喷嘴部24中藉自以形狀設置於沿 灑官部22a i 22h之基板搬送方向χ之方向的大致中央/ 之喷嘴部24&至邊所形成之喷嘴部群之1組，且於基板^ 之表面102之傾斜上端部附近對向之噴嘴部之噴出口 26a’係相對於基板w之表面1〇2之法線3〇〇設定為特定二 度例如40，於傾斜下端部附近對向之喷嘴部2处之噴出口 26h則設定為例如〇。之角度。藉由其他喷嘴部群所形成之二 組的喷出口之對向角度亦同樣地設^為朝向傾斜下 向，自傾斜上端部附近至下端部附近相對於基板w之表面 102之法線3〇〇逐漸遞減。 由上述方式所構成之噴灑喷嘴14a至14h，係自固定成以 形狀設置於靜止狀態之（未往復轉動）噴灑管部22a至22h之 喷嘴部24各自之對向角度的嗔出口 ％而將同等喷出量之藥 液喷出至基板W之表面1〇2。然後，藥液係於基板w之表 面102上朝向傾斜下端方向如箭頭γ所示進行流動，而此 流動之藥液’係於傾斜上端部附近與傾斜下端部附近如箭頭 Υ及Υ所示’藉由兩者之流速差減小可於基板w之表面1〇2 上之整個面貫現流速之均勻化。再者，箭頭之大小係表示流 速之大小。如此，因為可使等量之藥液於自各噴嘴部24喷 出之狀態下，促進喷出後藥液流速之均勻化，因此無須以實 現如此之均勻化為目的，而設置用以調整來自各喷嘴部24 100120645 12 201214549 之噴出量之繁瑣的機構等，藉此便可實現設計成本之低廉 化。再者，如圖2(a)所示之喷嘴部24f與24g，亦可存在喷 嘴部24之配置之一部分未成為交錯狀之區域。 又，因為喷嘴部24 ’係沿著與基板搬送方向X交又之方 向以交錯狀配置，故來自各喷嘴部24之藥液喷出流之相互 干擾減少，藉此更有效地減小基板表面102上之流動藥液之 ' 流速差，而促進基板W之表面102上之整個面的流速之均 勻化。 圖3，係表示由圖5所圖示之習知之基板處理裝置及圖^ 所圖示之本實施形態之基板處理裝置1分別喷出之藥液，於 傾斜姿勢之基板W之表面102上的位置與流速之關係之圖 表且與圖6相同地，縱軸係表示所喷出之藥液於基板w之 表面102上之流速，而橫軸係表示以傾斜姿勢之基板％之 傾斜上端為原點至傾斜下端為止之位置。於圖3中，描繪方 形點之線106及圓點108係與圖6所圖示之線1〇6及1〇8 相同，而描繪其他三角形點之線11〇，係表示將相對於以傾 斜姿勢搬送之基板w之表面102之複數個噴嘴部24之噴出 • 之對向角度朝向基板W之表面102之傾斜下端方向， •自傾斜上端部附近至傾斜下端部附近，以相對於基板w之 表面1〇2之法線30〇逐漸變小之形狀設置於各噴灑管部22 之複數個噴嘴部24的各噴出口 26所喷出之藥液於基板w 之表面102上的位置與流速之關係。 100120645 13 201214549 利=，1()6、108及U。相比可清楚地確認到， 二：相之基板處理裝置】之藥液噴咖^ 之基板處理裝置之藥液噴出相比，於基板w之傾斜 ΐ=近之藥液流速與於傾斜下端部附近之藥液流速之 列：^本實_樣之基祕題置1巾，在使關如姓 ⑽之_處理時，可減小於基板W之表面102 上之傾斜上端部附近與於傾斜下端部附近之則率之差 距，而可有效地改善於表面102上之整個面之姓刻率之均句 ^猎此’可達祕職理後H蚊等的均勻化之提 昇。 於上述實施形態’雖然將相對於以傾斜姿勢所搬送之基板 w之表面102之複數個噴嘴部24之喷出口 ％之對向角度 朝向基板W之表面1G2之傾斜下端方肖，自傾斜上端部附 近至傾斜下端部附近，以相對於基板W之表面1G2之法線 300逐漸遞減之方式，將喷嘴部24設置於各倾管部22， 且使藥液自固定成以形狀設置於靜止狀態之（未往復轉動） 喷灑管部22之噴嘴部24各自之對向角度的喷出口 ％喷出 至基板W之表面1G2’但本發明並不限定於此。 圖4’係表示於上述實施形態之變形例之基板處理裝置 中’將藥液自喷嘴部24噴出至基板w之表面1〇2的情況之 示意圖。 100120645 14 201214549 於圖4所圖示之變形例，係將相對於以傾斜姿勢所搬、、 基板W之表面⑽之複數個喷嘴部24之仙〇 %之^ 角度朝向基板W之表面102之傾斜下端方向，自傾斜上端 部附近至傾斜下端部附近，以相對於基板w之表面102之 法線300逐漸遞減之方式，將喷嘴部24設置於各噴灑管部 22，且藉由連結於各喷灑管部22之先前所公知，於例如上 述專利文獻1所記載之(段落編號[〇〇4〇]至[0041] ’圖2至圖 4)之轉動機構（未圖示）而以各喷灑管部22之中心軸為中 心，使各喷灑管部22 —致地自圖4(a)所圖示之狀態，轉動 至如圖4(b)所圖示朝向傾斜上端方向而成為特定角度、例如 使對向於傾斜最下端部附近之噴嘴部24h之喷出口 2讣相對 於基板W之表面1〇2之法線300朝向基板上端方向成為4〇〇 之角度之狀態為止後’再復原轉動至圖4⑻所圖示之狀態， 且一面反覆進行如此之轉動之往復動作一面改變來自各喷 嘴部24之噴出口26之藥液喷出至基板w之表面ι〇2之嘴 出方向。再者’利用此轉動機構之各魏管部22之往復轉 動角度、即各噴嘴部24之各噴出口 26相對於基板w之表 面102之對向角度之擺動幅度係為相同。 由此變形例之基板處理裝置之藥液噴出，係於基板^之 ，面102上可—面關定水準維持所喷出之藥液流速 勻化一面實現藥液處理之迅速化。 於上返各貫施形恶及變形例，雖然已針對本發明 100120645 15 201214549 用於使祕刻液、顯影液、光阻劑剝離液等藥液作為處理液 之藥液處理之情形進行說明，但本發明並不限定於此，亦可 應用於使用純水等洗淨液作為處理液之洗淨處理。 又’於上述實施形態及變形例，雖然已針對使用喷嘴之個 數為8個之構成進行說明，但本發明並不限定於此，只要根 據基板w之尺寸或處理之種類等選擇適當數量之喷灑喷嘴 即可。 【圖式簡單說明】 圖1係以圖解表示本發明實施形態之基板處理裝置之概 略構成圖。 圖2(a)及(b)係用以說明於本發明實施形態之基板處理裝 置中’相對於基板表面而以形狀設置於構成喷灑喷嘴之喷灑 管部之喷嘴部的喷出口之對向角度的示意圖。 圖3係表tf藉由習知之基板處理裝置及本發明實施形態 之基板處理裝置所分別嘴出之藥液，於傾斜姿勢之基板之表 面上的位置與流速之關係的圖表。 圖4 (a)及(b)係表示於本發明實施形態之變形例之基板處 理裝置中自。t為部將藥液噴出至基板表面之情況的示意圖。 圖5⑻及(b)係表示於習知之嘴灑管部往復轉動型之基板 處理裝置中自噴嘴部將處理液喷出至基板表面之情況的示 意圖。 圖6 知之魏管部往復轉動型之基板處理 100120645 201214549 裝置所喷出之藥液，於傾斜姿勢之基板之表面上的位置與流 速之關係之圖表。 【主要元件符號說明】 1 基板處理裝置 10 藥液處理室 12 藥液貯槽 14 喷灑喷嘴 14a〜14h 喷灑喷嘴 16 送液泵 18 藥液供給道 20 循環排水道 22 喷灑管部 22a〜22h 喷灑管部 24 喷灑喷嘴部 24a〜24h 喷嘴部 26 喷出口 26a〜26h 喷出口 100 喷嘴部 102 基板表面 104 喷出口 106 、 108 、 110 線 200 水平面 100120645 17 201214549 300 A、A'、B、B,、Y、Y，、Y1Crystal Display), Plasma Display Panel (Pdp), Organic Light Emitting Diode (OLED), Field Emission Display (FED 'Field Emission Display), Vacuum Fluorescent Displays (VFD) ), glass substrates such as solar panels, glass/ceramic substrates for magnetic/optical disks, semiconductor wafers, electronic component substrates, various substrates, and washing liquids such as pure water, money engraving liquid, developing liquid, and light. A substrate processing apparatus that wet-processes a substrate by using various processing liquids such as a chemical solution such as a resist stripping solution. [Prior Art] As a substrate processing apparatus of this type, it is known that a transport roller or the like which is arranged in parallel along the transport direction of the substrate is orthogonal to the substrate transport direction with respect to the horizontal plane in the wet processing chamber. The substrate is conveyed in a posture in which the direction is inclined by a certain angle, and the processing liquid is ejected from the surface of the substrate by the nozzle, thereby performing specific substrate processing. In such a substrate processing apparatus, • the type of the processing is performed, and pure water or the like is used. Various treatment liquids such as a cleaning solution, an etching solution, a developing solution, and a photoresist liquid are sprayed from the spray nozzle onto the surface of the substrate. Then, the substrate processing apparatus is such that the processing liquid is uniformly supplied to the entire substrate surface, and the tube portion is sprayed in the direction of the substrate transport direction 2 100120645 1 201214549, and along the spray tube portion. a spray nozzle including a plurality of nozzle portions provided in a shape in which the length direction is adjacent to each other in a row is arranged in parallel with each other at equal intervals in a direction intersecting a plurality of substrate transfer directions, and the processing liquid is self-compressed by a plurality of nozzle portions Sprayed onto the surface of the substrate. Further, a substrate processing apparatus for reciprocating rotation of a spray pipe portion in which a spray pipe portion of a spray nozzle is reciprocally rotated about a central axis of a longitudinal direction thereof and a discharge direction of the treatment liquid is used (for example, 1 paragraph number [0040] to [0041], FIG. 2 to FIG. 4) ° [Prior Art Document] [Patent Document] Patent Document 1: Japanese Patent Laid-Open Publication No. Hei 20-188272 (Invention) (Problem to be Solved) FIG. 5 is a schematic view showing a state of supply of a chemical solution by a conventional spray tube reciprocating substrate processing apparatus. The flap processing device ί ------ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The substrate w is conveyed in a posture in which the direction of the conveyance is orthogonal to the oblique direction. Then, a plurality of nozzle portions 100 are provided in a shape in which the money tube portions (unexpected) extending in the direction along the substrate transport direction are adjacent to each other along the longitudinal direction of the spray nozzle portion. The composition of the spray, the mouthpiece S*' edge and the plurality of substrates transport direction 100120645 201214549 the direction of the intersection is equal to 1 large 4 mesh, the state, and as shown in the figure ~ relative to the substrate, each nozzle sprinkles the heart surface The state of 1〇2 102 is reversed; the ejection port of the mouth 100 is rotated, and the ejection of the surface 102 toward the substrate W is shown in Fig. 6 in a direction in which the substrate processing apparatus shown in Fig. 5 is ejected. The liquid surface 102 which is ejected from the surface of the substrate w in the inclined posture is disposed by the rotation mechanism of the spray tube portion, and is connected to each center to make each spray tube portion: no) The center axis is oriented from the discharge port 104; as shown in Fig. 5 (4), the surface of each nozzle portion 100 is subjected to the state of the inclined lower end direction phase of the normal line 3Gm, and the state of the substrate W, which is opposite to the angle of the figure, for example, 4 G°. The squirting line 300 of Table 100 D 104 is, for example, 〇. The orientation change the position of the liquid medicine from the respective sprays 102, and the * is a fine table, indicating the speed at which the liquid medicine of the object is on the substrate core =, and the axis of the yaw axis is not inclined in the inclined position. The position up to the lower end. In Fig. 6, a line 106 of square dots is shown, which shows the relationship between the position of the liquid chemical ejected from each of the ejection ports 104 in the state of Fig. 5(a) on the surface 1〇2 of the substrate W and the flow velocity. The dot 108 indicates the relationship between the position of the liquid chemical ejected in the state of Fig. 5 (b) on the surface 102 of the substrate w and the flow velocity. 5 and 6, it is clear that the respective discharge ports 104 of the respective nozzle portions 100 are directed toward the normal line 300 of the surface 1〇2 of the substrate W toward the inclined lower end direction of the substrate W, regardless of the surface at 40°. In the state of 1〇2, or in the state of 0. In the state of the surface 102, the flow rate of the coating liquid on the substrate W is 100120645 5 201214549. The vicinity of the upper end of the slope is as shown by the arrows A and A, which are relatively small, and (4).. the near-tilt lower end (4) (9) The larger the size of the coating liquid, the lower the flow rate of the coating liquid generated from the position on the substrate surface 102 of the inclined posture. Furthermore, the size of the arrow indicates the magnitude of the flow rate. Thus, if the flow rate of the coating liquid causes a difference, for example, when the liquid medicine such as the side treatment liquid is used, 'the partial m degree will be generated, and (4) the pattern line width unevenness after the treatment will result in a low yield or The result of quality deterioration. The present invention has been developed in the above circumstances, and the purpose thereof is to provide a process for reducing the discharged treatment liquid on the substrate when the treatment liquid is ejected onto the main surface of the substrate supported by the tilting rotation. By narrowing the flow velocity on the main surface, the homogenization of the wet processing of the entire surface of the main surface of the substrate can be achieved by promoting the uniformity of the flow velocity of the entire surface of the main surface of the substrate, thereby achieving a good yield improvement and quality improvement. Substrate processing device. (Means for Solving the Problems) The substrate processing apparatus according to the invention includes: a wet processing chamber that processes a two-plate; and a substrate (four) that is disposed in the wet processing chamber to make the substrate a horizontal plane is tilted in a direction orthogonal to the substrate transport direction, and the substrate is transported in a horizontal direction; and a processing liquid supply means supplies the processing liquid to the substrate transporting means disposed in the wet processing chamber The main surface of the substrate to be conveyed; the processing liquid supply means is provided with a plurality of spray nozzles which are arranged in parallel with each other at equal intervals in the direction in which the substrate conveyance direction is disposed, and discharge the processing liquid to the main surface of the substrate. Each of the plurality of spray nozzles is configured by a spray pipe portion extending in a direction along the direction in which the substrate is conveyed, and a shape that is adjacent to each other in a row along a length direction of the spray pipe portion and processed The above-mentioned substrate processing apparatus is characterized in that a plurality of nozzle portions are ejected from the ejection port to the main surface of the substrate, and are formed on the main surface of the substrate. The opposing angle of the ejection orifices of the plurality of nozzle portions is directed toward the oblique lower end direction of the main surface of the substrate conveyed in an inclined posture, from the vicinity of the inclined upper end portion of the main surface of the substrate to the vicinity of the inclined lower end portion with respect to the main surface of the substrate The plurality of nozzle portions are disposed on the plurality of spray tube portions so that the flow rate of the treatment liquid after the discharge is relatively small in the vicinity of the inclined upper end portion on the main surface of the substrate. On the other hand, the vicinity of the inclined lower end portion is relatively large. According to a second aspect of the invention, in the substrate processing apparatus of the first aspect of the invention, the plurality of nozzle portions of the plurality of spray nozzles arranged at equal intervals in a direction intersecting with a substrate conveyance direction are staggered in the intersecting direction Configuration. According to a third aspect of the invention, a substrate processing apparatus according to the invention of the present invention, further comprising: a rotation means coupled to each of the spray tube portions, and centering on a central axis of each of the spray tube portions by the rotation means And each of the spray pipe portions is rotated at a specific angle toward the inclined upper end direction of the main surface of the substrate, and then the return rotation is performed, and the reciprocating operation of the rotation is repeated to change the respective nozzle portions. The discharge port treatment liquid is discharged toward the main surface of the substrate. The substrate processing apparatus according to the invention of claim 1, wherein the discharge amount of the treatment liquid discharged from the discharge ports of the plurality of nozzle portions is equal. According to a fifth aspect of the invention, in the substrate processing apparatus of the first to fourth aspects, the processing liquid discharged from the ejection openings of the plurality of nozzle portions is a worm liquid. According to the substrate processing apparatus of the first aspect of the invention, the discharge port of the plurality of nozzle portions on the main surface of the substrate is opposed to the inclined lower end direction of the main surface of the substrate conveyed in an inclined posture from the substrate. The vicinity of the inclined upper end portion of the main surface is up to the vicinity of the inclined lower end portion, and a plurality of nozzle portions are provided in the plurality of spray tube portions so as to gradually decrease in shape with respect to the normal line of the main surface of the substrate. Therefore, the treatment liquid which is discharged after being ejected on the main surface of the substrate W promotes uniformization of the flow velocity over the entire surface of the main surface of the substrate by the decrease in the flow velocity difference in the vicinity of the upper end portion of the inclined portion and the vicinity of the lower end portion of the inclined portion. The entire surface of the main surface of the substrate can be covered to achieve uniform processing. In the substrate processing apparatus according to the second aspect of the invention, the plurality of nozzle portions of the plurality of spray nozzles arranged at equal intervals in the direction in which the substrate is conveyed in the direction of the substrate transport are arranged in a zigzag manner in a zigzag direction. Therefore, the mutual interference of the processing liquid ejection flow from each nozzle portion is reduced, thereby further promoting the uniformity of the speed on the entire surface of the main surface of the substrate, and covering the entire surface of the main surface of the substrate to achieve more efficient processing. Chemical. In the substrate processing apparatus according to the third aspect of the invention, the respective spray tube portions are rotated at a specific angle toward the main surface of the substrate by the rotation means at an inclination of 100120645 8 201214549 以 in the direction of the main surface of each nozzle sprinkle portion. Thereafter, the return rotation is performed, and the reciprocating motion of the rotation is repeated, and the surface is changed in the discharge direction of the processing liquid from each of the discharge ports of the nozzle portions toward the main surface of the substrate. Therefore, the wet processing can be speeded up while maintaining the uniformity of the flow rate of the discharge processing liquid at the level of the main surface of the substrate w. In the substrate processing apparatus of the fourth aspect of the invention, it is not necessary to use a mechanism for adjusting the discharge I from each nozzle portion to adjust the flow rate of the processing liquid after the discharge, thereby realizing the design. The cost is low. According to the substrate processing apparatus of the fifth aspect of the invention, the difference in etching rate between the vicinity of the inclined upper end portion and the vicinity of the inclined lower end portion on the main surface of the substrate can be reduced, and the entire surface of the main surface can be effectively improved. Sentence. Thereby, the uniformity of the line width or the like of the pattern after the etch processing can be achieved. [Embodiment] The substrate processing apparatus 1 according to the embodiment of the present invention is schematically illustrated with reference to the drawings, and the substrate processing apparatus 1 of the embodiment of the present invention is provided with a chemical processing chamber 10, which is ejected. Surname; ^, developer, photoresist stripping solution and other liquids, and the substrate for the drug; geography, a plurality of transport | Kun (not shown), in the liquid processing room, the potential line base - face Reciprocating movement of water to x = bedding tank 12, which stores the liquid medicine; a plurality of spray nozzles 14, the strip liquid is bred to the surface 1G2 of the substrate w; the liquid supply pump 16; and the liquid medicine... 100120645 201214549 That is, the liquid medicine stored in the chemical storage tank 12 is sent to the spray nozzle 14. The spray-nozzle 14' is disposed in parallel with each other at equal intervals in the direction in which the liquid crystal processing chamber 1 () is placed in the direction of the substrate transporting direction 2), and each spray-spraying system is transported along the substrate. The spray pipe portion 22 (refer to FIG. 2) extending in the direction of the direction X, and the shape of the spray pipe portion 22 which is adjacent to each other in the longitudinal direction of the spray pipe portion 22, and the liquid medicine from the discharge port 26 thereof (See Fig. ()) spray, which is composed of a plurality of nozzle portions % on the surface 1〇2 of the substrate W. The second liquid treatment is applied to the bottom of the 1G 'there is a circulating drainage channel which is used to flow down to the inner bottom of the liquid medicine to make the medicine (4) ill, and the circulation drainage channel is 2, connected to the liquid storage tank & In the substrate processing apparatus of the above-described configuration, first, the surface is supported by the transfer processing, and the liquid chemical processing chamber 1G is supported by the tilting angle in a direction orthogonal to the substrate transport direction X with respect to the horizontal plane. The substrate transfer port j (not shown) is moved to the substrate w in the chemical processing chamber 1G and reciprocated in the horizontal direction. The surface is transported to the chemical storage tank 12 via the drug supply channel 18 by the drive 16 (4). The chemical solution is delivered to the spray nozzle 14 and a predetermined amount of the chemical solution is ejected from the nozzle portions 24 of the spray nozzle 14 to the surface 102' of the substrate w, thereby performing chemical treatment. The substrate W that has been subjected to the chemical treatment is carried out by a substrate transfer port (not shown) that is transported to the personal chemical processing chamber 1〇. The liquid medicine " flowing downward from the surface 102 of the substrate W and flowing to the bottom portion of the chemical processing chamber 1G is recovered to the chemical storage tank 12 via the circulation drain 20. In the substrate processing apparatus according to the embodiment of the present invention, the surface of the substrate W is placed on the nozzle portion 24 of the spray tube portion 22 constituting the spray nozzle 14 with respect to the surface 1 of the substrate W. A schematic view of the opposite angle of the outlet 26 'Fig. 2(a) is a top view thereof' and Fig. 2(b) is a cross-sectional view thereof. The spray nozzles 14 are disposed in the chemical processing chamber 10 so as to be parallel to each other in the direction parallel to the substrate transfer direction X, and the respective squirt nozzles 14 are extended in the direction along the substrate transport direction X. The spray pipe portion 22 and a plurality of nozzles disposed in a shape close to each other in a row along the longitudinal direction of the spray pipe portion 22 and ejecting the chemical liquid from the discharge port 26 to the surface 1〇2 of the substrate W The department 24 is composed of. As shown in Fig. 2 (a) and Fig. 2 (b), in the present embodiment, the eight spray nozzles 14a to 14h are arranged in parallel with each other at equal intervals in the direction in which the substrate transfer direction is intersected. Assume. The spray nozzles 14a to 14h are respectively close to each other on the one line by the spray pipe portions 22a to 22h extending in the direction of the substrate transfer direction χ, and along the length direction of each of the spray pipe portions 22a to 22h, respectively. The plurality of mouth portions 24 are formed in a shape. Then, the opposing angle of the discharge port 26 of the plurality of nozzle portions 24 with respect to the surface 1〇2 of the substrate w conveyed in the inclined posture is directed toward the inclined lower end direction of the surface 1〇2 of the substrate (7), from the upper end of the inclination The nozzle portion 24 is disposed in each of the spray pipe portions 22a to 22h so as to be gradually reduced from the vicinity of the portion to the lower end portion of the inclined surface with respect to the normal line 3 of the surface 102 of the substrate W, and the nozzle portions 24' are as shown in the figure. 2(a) is arranged in a staggered manner along the side of the substrate transport direction 100120645 201214549. Fig. 2(b) is 'exemplified' in the nozzle portion 24 by a nozzle portion 24& which is formed in a shape substantially in the direction of the substrate transport direction 沿 along the sprinkling portion 22a i 22h/ In the group of one group, the discharge port 26a' of the nozzle portion opposite to the inclined upper end portion of the surface 102 of the substrate ^ is set to a specific second degree, for example, 40 with respect to the normal line 3 of the surface 1〇2 of the substrate w. The discharge port 26h at the nozzle portion 2 opposed to the vicinity of the inclined lower end portion is set to, for example, 〇. The angle. The opposing angles of the two sets of discharge ports formed by the other nozzle group are similarly oriented toward the oblique downward direction, from the vicinity of the inclined upper end portion to the vicinity of the lower end portion with respect to the normal line of the surface 102 of the substrate w. 〇 gradually decreasing. The spray nozzles 14a to 14h configured as described above are equivalent to the % of the opposite angles of the nozzle portions 24 of the nozzle portions 24a (not reciprocally rotated) of the nozzle portions 22a to 22h which are fixed in shape in a stationary state. The discharged amount of the chemical liquid is ejected to the surface 1〇2 of the substrate W. Then, the liquid medicine flows on the surface 102 of the substrate w toward the oblique lower end direction as indicated by an arrow γ, and the flowing liquid chemical solution 'is in the vicinity of the inclined upper end portion and the vicinity of the inclined lower end portion as indicated by arrows Υ and Υ' The flow velocity difference between the two can be reduced to uniformize the flow velocity over the entire surface of the substrate w1〇2. Furthermore, the size of the arrow indicates the magnitude of the flow rate. In this way, since the equal amount of the chemical liquid can be ejected from the respective nozzle portions 24, the flow rate of the chemical liquid after the discharge is promoted, so that it is not necessary to achieve such uniformization, and it is provided to adjust the respective The mechanism of the nozzle portion 24 100120645 12 201214549 is complicated, and the design cost can be reduced. Further, as shown in Fig. 2(a), the nozzle portions 24f and 24g may have a region in which the nozzle portion 24 is not partially staggered. Further, since the nozzle portions 24' are arranged in a staggered manner in the direction intersecting the substrate transport direction X, the mutual interference of the chemical liquid ejecting streams from the respective nozzle portions 24 is reduced, thereby more effectively reducing the substrate surface. The flow rate of the flowing liquid on 102 is poor, and the flow rate of the entire surface on the surface 102 of the substrate W is promoted to be uniform. Fig. 3 is a view showing the liquid crystal discharged from the conventional substrate processing apparatus shown in Fig. 5 and the substrate processing apparatus 1 of the embodiment shown in Fig. 5, on the surface 102 of the substrate W in an inclined posture. A graph showing the relationship between the position and the flow rate, and in the same manner as in Fig. 6, the vertical axis indicates the flow rate of the discharged chemical liquid on the surface 102 of the substrate w, and the horizontal axis indicates the inclined upper end of the substrate % in the inclined posture. Point to the position where the lower end is tilted. In FIG. 3, the line 106 and the dot 108 depicting the square points are the same as the lines 1〇6 and 1〇8 illustrated in FIG. 6, and the lines 11〇 depicting other triangular points are indicated to be inclined with respect to The ejection angle of the plurality of nozzle portions 24 of the surface 102 of the substrate w to be conveyed is oriented toward the inclined lower end direction of the surface 102 of the substrate W, and from the vicinity of the inclined upper end portion to the vicinity of the inclined lower end portion with respect to the substrate w The position where the normal line of the surface 1〇2 is gradually smaller and the shape of the liquid medicine discharged from each of the plurality of nozzle portions 24 of each of the spray tube portions 22 is on the surface 102 of the substrate w and the flow velocity relationship. 100120645 13 201214549 利 =, 1 () 6, 108 and U. It can be clearly confirmed that the liquid crystal flow rate of the substrate w is lower than the liquid flow rate of the substrate w in the substrate processing device of the liquid crystal spray device of the second phase: The vicinity of the flow rate of the liquid medicine: ^ The actual base of the sample is set to 1 towel, which can be reduced to the vicinity of the inclined upper end on the surface 102 of the substrate W when the processing is performed as the last name (10) The difference in the rate near the lower end portion can effectively improve the average of the surnames of the entire surface on the surface 102. In the above embodiment, the angle of the discharge port % of the plurality of nozzle portions 24 of the surface 102 of the substrate w conveyed in the inclined posture is inclined toward the lower end of the surface 1G2 of the substrate W, and the upper end portion is inclined from the upper end. The nozzle portion 24 is disposed in each of the tilting pipe portions 22 so as to be gradually deformed to be in a shape of a stationary state with respect to the normal line 300 of the surface 1G2 of the substrate W in the vicinity of the inclined lower end portion. (Reciprocal Rotation) The nozzles 24 of the nozzle portions 24 of the spray pipe portion 22 are ejected to the surface 1G2' of the substrate W, but the present invention is not limited thereto. Fig. 4 is a schematic view showing a state in which the chemical solution is ejected from the nozzle unit 24 to the surface 1〇2 of the substrate w in the substrate processing apparatus according to the modification of the above embodiment. 100120645 14 201214549 The modification shown in FIG. 4 is inclined toward the surface 102 of the substrate W with respect to the angle of the plurality of nozzle portions 24 of the surface (10) of the substrate W which is carried in an inclined posture. In the lower end direction, from the vicinity of the inclined upper end portion to the vicinity of the inclined lower end portion, the nozzle portion 24 is provided to each of the spray tube portions 22 so as to be gradually reduced with respect to the normal line 300 of the surface 102 of the substrate w, and is connected to each of the spray tubes The sprinkling unit 22 is known as a rotating mechanism (not shown) described in the above-mentioned Patent Document 1 (paragraph No. [〇〇4〇] to [0041] 'Fig. 2 to Fig. 4). The center axis of the sprinkling pipe portion 22 is centered, and each of the sprinkler pipe portions 22 is rotated from the state shown in Fig. 4 (a) to the direction of the inclined upper end as shown in Fig. 4 (b). The angle is, for example, a state in which the discharge port 2 of the nozzle portion 24h in the vicinity of the lowermost end portion of the substrate is inclined to an angle of 4 朝向 toward the upper end direction of the substrate with respect to the normal line 300 of the surface 1〇2 of the substrate W. Revert to the state shown in Figure 4 (8), and repeat this Changing the rotational reciprocating motion from one side of each discharge outlet 24 of nozzle portion 26 of the discharge liquid to the surface of the substrate w ι〇2 direction of the nozzle. Further, the reciprocal rotation angle of each of the duct portions 22 by the rotation mechanism, i.e., the amplitude of the swing angle of the respective discharge ports 26 of the respective nozzle portions 24 with respect to the surface 102 of the substrate w is the same. The liquid medicine of the substrate processing apparatus according to the modification is ejected on the substrate, and the surface of the surface 102 can be maintained at a level that maintains the flow rate of the discharged chemical liquid to achieve rapid chemical treatment. In the above, the method of treating the liquid medicine such as the secret liquid, the developer, the photoresist stripping liquid, and the like as the liquid medicine for the treatment liquid is described. However, the present invention is not limited thereto, and may be applied to a washing treatment using a cleaning liquid such as pure water as a treatment liquid. In the above-described embodiments and modifications, the configuration in which the number of nozzles used is eight is described. However, the present invention is not limited thereto, and an appropriate number may be selected depending on the size of the substrate w, the type of processing, and the like. Spray the nozzle. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic block diagram showing a substrate processing apparatus according to an embodiment of the present invention. 2(a) and 2(b) are views for explaining a pair of discharge ports of a nozzle portion constituting a spray nozzle portion of a spray nozzle in a substrate processing apparatus according to an embodiment of the present invention. A schematic diagram of the angle of view. Fig. 3 is a graph showing the relationship between the position and the flow velocity on the surface of the substrate in an inclined posture by the liquid medicine discharged from the conventional substrate processing apparatus and the substrate processing apparatus according to the embodiment of the present invention. 4(a) and 4(b) are diagrams showing a substrate processing apparatus according to a modification of the embodiment of the present invention. t is a schematic view of the case where the liquid is ejected to the surface of the substrate. Figs. 5 (8) and (b) are views showing a state in which the processing liquid is ejected from the nozzle portion to the surface of the substrate in the substrate processing apparatus of the conventional nozzle sprinkler type reciprocating type. Fig. 6 shows the substrate processing of the reciprocating rotation type of the Wei tube section 100120645 201214549 A graph showing the relationship between the position of the liquid medicine sprayed on the surface of the substrate and the flow velocity in the inclined posture. [Description of main components] 1 substrate processing apparatus 10 chemical processing chamber 12 chemical storage tank 14 spray nozzles 14a to 14h spray nozzle 16 liquid supply pump 18 chemical supply channel 20 circulation drain 22 spray pipe 22a 22h Spray pipe portion 24 spray nozzle portions 24a to 24h nozzle portion 26 discharge ports 26a to 26h discharge port 100 nozzle portion 102 substrate surface 104 discharge port 106, 108, 110 line 200 water level 100120645 17 201214549 300 A, A', B, B, Y, Y, Y1

WW

X 於基板表面之法線 箭頭 基板 水平方向 100120645 18X normal to the surface of the substrate arrow substrate horizontal direction 100120645 18

Claims (1)

201214549 七、申請專利範圍： 1.一種基板處理裝置，其係包含： 濕式處理室，其對基板進行濕式處理； 基板搬送手段，其配設於上述濕式處理室内，以使基板相 對於水平面朝與基板搬送方向正交之方向傾斜特定角度之 会勢，於水平方向搬送基板；以及 處理液t、、·’5手^又，其將處理液供給至藉由配設於上述濕式 處理室内之基板搬送手段所搬送之基板之主面； 上述處理液供給手段’係具備沿著與基板搬送方向交叉之 方向以等間距相互平行地配置且將處理液喷出至基板主面 之複數個喷灑噴嘴； 各上述複數個魏喷嘴’係由沿著上絲板搬送方向之方 向延伸之喷m管部、以及以沿該賴管部之長度方向於一行 上相互接近之形狀設置並將處理液自其喷出口喷出至基板 主面的複數個喷嘴部所構成； 其特徵在於， 將對於基板之主面之上述複數㈣嘴部之喷出口之對向 *肖度’朝向以傾斜之㈣所搬送之基板主面_斜下端方 •向’自基板主面之傾斜上端部附近直至傾斜下端部附近，以 相對於基板主面之法線逐漸遞減之方式，將上述複數個喷嘴 部設置於上述複數個倾管部，藉此於基板之主面上使喷出 後之處理液之流速於上述傾斜上端部附近相對地變小，而於 100120645 19 201214549 上述傾斜下端部附近相對地變大。 2.如申請專利範圍第1項之基板處理裴 ^ /、〒，沿者與 基板搬送方向交又之方向以等間距所配置之上— 〃 灑喷嘴之上述複數個噴嘴部，係於該交又方向以=铒 噴 配置。 又’日狀進行 3·如申請專利範圍第1項之基板處理裝置，其 包含連結於各上述喷灑管部之轉動手段，/、，進一步 心 藉由上述轉動手段而以各上述嗔灑管部、 以 ’使各上述喷灑管部朝向基板主面之傾斜上π Ά為中 特定角度進㈣動後再進行制軸，W向-致地 -面反覆進行該轉動之往復動作，—面 嘴部之各上述喷出口之處理液朝基板主面各上述嘴 4. 如申請專利難第〗項之基板處理裝置，、出方向。 複數個噴嘴部之嗔出σ所喷出之處理液之自上述 5. 如申請專利範圍第丨至4項中任—、里係為相等。 其中，自上述複數個噴嘴部之嘴出口壬所:之基，處理農置， 刻液。 、之處理液係為蝕 100120645 20201214549 VII. Patent application scope: 1. A substrate processing apparatus, comprising: a wet processing chamber for performing wet processing on a substrate; and a substrate transporting means disposed in the wet processing chamber to make the substrate relative to The horizontal plane is inclined at a specific angle in a direction orthogonal to the substrate transport direction, and the substrate is transported in the horizontal direction; and the processing liquid t, , , , , , , , , , , , , , , , , , , , , , , , , , , The main surface of the substrate conveyed by the substrate transfer means in the processing chamber; the processing liquid supply means' is disposed so as to be parallel to each other at equal intervals in a direction intersecting the substrate transfer direction, and to eject the processing liquid to the main surface of the substrate a plurality of spray nozzles; each of the plurality of Wei nozzles is disposed by a sprayed m-tube portion extending in a direction of a direction in which the upper wire is conveyed, and a shape that is close to each other in a row along a length of the riser portion The nozzle is sprayed from the discharge port to a plurality of nozzle portions on the main surface of the substrate; wherein the plurality of (four) mouth portions of the main surface of the substrate are The opposite direction of the discharge port* is toward the main surface of the substrate which is conveyed by the inclined (four) _ oblique lower end side; the direction from the vicinity of the inclined upper end portion of the main surface of the substrate to the vicinity of the inclined lower end portion with respect to the main surface of the substrate The plurality of nozzle portions are provided on the plurality of inclined tube portions in such a manner that the plurality of nozzle portions are gradually decreased, whereby the flow rate of the processing liquid after the discharge is relatively small in the vicinity of the inclined upper end portion on the main surface of the substrate. At 100120645 19 201214549, the vicinity of the inclined lower end portion is relatively large. 2. The substrate processing 裴^ /, 〒 according to the first paragraph of the patent application scope, the direction of the substrate and the substrate transport direction are arranged at equal intervals - the plurality of nozzle portions of the squirt nozzle are at the intersection The direction is also configured with = 铒 spray. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus according to claim 1 includes a rotation means connected to each of the spray tube portions, and further, each of the shower tubes is further provided by the rotating means The part is made to rotate the oscillating portion of each of the spray tube portions toward the main surface of the substrate at a specific angle (4), and then the shaft is rotated, and the reciprocating motion of the rotation is performed by the W-to-ground surface. The processing liquid of each of the ejection ports of the mouth faces the nozzles of the main surface of the substrate. 4. The substrate processing apparatus according to the difficulty of the patent application, the direction of the exit. The processing liquid sprayed from the plurality of nozzle portions is extracted from the above-mentioned 5. As in the patent application range 丨 to 4, the middle is equal. Wherein, from the mouth of the plurality of nozzles, the outlet of the nozzle is used to treat the farm and the liquid. The treatment liquid is etched 100120645 20
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