TW201005854A - Device and method for treating substrate - Google Patents

Abstract

To clean and dry a substrate having water repellency while conveying it. The device for treating a substrate having a cleaning chamber 1C and a drying chamber 1D carries out cleaning and drying of the surface of the substrate S having water repellency while conveying it in a slanted posture. The cleaning chamber 1C is equipped with a first supplying means 20 for supplying washwater to the upper end part of the substrate S continuously in the direction of conveying and a second supplying means 24 that is installed near the end of the downstream side along the direction of crossing the substrate S from its upper part to its lower part and is designed to supply washwater to the substrate S continuously in the above direction. The drying chamber 1D is equipped with an air knife 30 for jetting air to the conveyed substrate S that is installed near the second supplying means 24 along the direction of crossing the substrate S from its upper part to its lower part.

Description

201005854 VI. Description of the Invention: [Technical Field] The present invention relates to an FPD (Flat) such as an LCD (Liquid Crystal Display) or a PDP (Plasma Display Panel) (plasma display) A substrate for cleaning and drying a substrate such as a glass substrate, a glass substrate for an organic EL (Eleetro-Luminescence), a substrate for a disk, a glass substrate for a photomask, or a semiconductor wafer. Processing device, etc. φ [Prior Art] LCD is provided with a high-performance circuit including a thin film transistor on a glass substrate to improve image quality and expand the viewing angle. In recent years, a polysilicon film transistor having the following polycrystalline silicon is used. The polycrystalline germanium film transistor has a high electron mobility and is advantageous in terms of display responsiveness and contrast. In the manufacture of such an LCD, for example, an amorphous germanium layer is formed on a glass substrate, and a natural oxide film (etching treatment) on the surface of the germanium layer is removed, and then subjected to cleaning and drying treatment to irradiate a laser to make an amorphous germanium. The layer is melted and recrystallized (forming a polycrystalline germanium layer) (laser annealing method). In this case, the previous etching-drying-steps are carried out in such a manner that the substrate is wound around the vertical axis with the center position of the substrate as a fulcrum in a state in which the glass substrate on which the amorphous germanium layer is formed is horizontally supported. By rotating, the processing liquid is supplied to the substrate in this order, and the substrate is etched and cleaned, and then the substrate is rotated at a high speed to remove the cleaning liquid and dried (rotary drying). In the substrate processing, the 139254.doc 201005854 plate after the etching treatment for removing the oxide film has a strong water repellency, so that after the cleaning process, a sporadic cleaning liquid easily remains on the substrate. One of the reasons for the formation of a non-uniform oxide film by water marks. The water mark deteriorates the characteristics of the polysilicon layer formed by the laser annealing. Therefore, it is necessary to prevent the occurrence of the polycrystalline germanium layer. For example, as disclosed in Patent Document 1, the cleaning liquid is supplied to the entire surface of the substrate while rotating the substrate at a low speed. The cleaning process is performed in a state in which the liquid film of the cleaning liquid is formed under the action of the surface tension, and then the rotation is switched to high-speed rotation, and the cleaning liquid is removed and dried in a short time. That is, while avoiding

For a long period of time, the oxygen and the cleaning liquid coexist on the substrate surface (4) to form a water mark, and the substrate is cleaned and dried to prevent the occurrence of water marks. [Problem to be Solved by the Invention] However, in recent years, the substrate to be processed has become larger, and the substrate has been rotated as in Patent Document i - The practice of cleaning and drying is becoming more and more difficult to achieve on the entity φ. Therefore, it is necessary to satisfactorily clean and dry the substrate without rotating the substrate. Therefore, as one of the methods, the substrate is transported in an inclined posture, and the cleaning liquid is supplied along the upper end portion of the substrate S by the liquid nozzle 50 provided along the transport direction as shown in FIG. 8 (4). The cleaning process is performed by dropping the cleaning liquid along the substrate S while the substrate surface is covered by the liquid layer of the cleaning liquid, and then the liquid nozzle 52 is used to spray 139254.doc -4- 201005854 gas to the substrate. The liquid layer is sequentially removed from the front end side in the transport direction. However, when the cleaning liquid is dropped along the water-repellent substrate 8, the cleaning liquid tends to concentrate on the central portion of the substrate (the central portion in the transport direction) by the surface tension, and the result is lowered. As shown by the hatching in the figure, the front end of the substrate s (the front end in the transport direction) and the rear end will produce a portion (not dropped) where the cleaning liquid does not fall. Further, even if the substrate is conveyed, the state is maintained. Therefore, as shown in Fig. 8(b), a portion which is transferred to the drying process (the hatched portion in the same figure) in a state where the cleaning process is not performed is generated. Further, even if the knives are subjected to the cleaning process, there is a problem in that, as the substrate is conveyed, a portion where the cleaning liquid does not fall before the drying process (the portion shown by each point in the same figure) is generated, for example, A droplet of the cleaning liquid or the like is attached to the portion to cause water marks to form. Therefore, it is expected to solve these problems. The present invention has been made in view of the above circumstances, and an object of the present invention is to perform a cleaning and drying process of a substrate while carrying a substrate having water repellency. [Means for Solving the Problems] In order to solve the above problems, the present invention is a substrate processing apparatus including a transport mechanism that supports a substrate having water repellency in a posture in which the surface is inclined, and transports in a horizontal direction along the surface a cleaning liquid supply mechanism that supplies a cleaning liquid to the substrate conveyed by the conveying mechanism, and a drying mechanism that is disposed on the substrate more than the cleaning liquid supply mechanism, and is removed by the gas pressure on the downstream side. The cleaning liquid on the substrate is configured as follows: the cleaning liquid supply mechanism includes a first supply mechanism, and 139254.doc 201005854 is provided along the transport direction and is in a state in which the cleaning liquid is continuous in the direction. The cleaning liquid is supplied to at least the upper end portion of the substrate; and the second supply mechanism is adjacent to the downstream end portion of the first supply mechanism, and is traversed to the first substrate from the upper side of the transfer substrate to the lower side thereof. Provided in a traverse direction, the cleaning liquid is supplied to the transport substrate while the cleaning liquid is continuous in the traverse direction of the first substrate; the drying mechanism The second supply means is disposed adjacent to the second substrate traversing from the upper side of the transport substrate to the lower side thereof, and is ejected to the transport substrate while continuing in the traverse direction of the second substrate. gas. According to the substrate processing apparatus, the cleaning liquid is supplied from the second supply end to the upper end portion of the transfer substrate, and the cleaning liquid can be applied to the substrate while the liquid layer of the cleaning liquid is formed on the surface of the substrate. In addition, since the second supply mechanism is provided in the downstream end portion of the first supply mechanism, and the cleaning liquid is supplied in the traverse direction of the i-th substrate by the second supply mechanism, the front end portion of the conveyance direction is provided. And the rear end portion generates a portion where the cleaning liquid does not flow down, and the (H) cleaning and drying treatment H, that is, even if the unflowed portion is generated as described above, when the substrate passes through the position of the second supply mechanism, The cleaning liquid is supplied to the unflowed portion. Therefore, it is possible to prevent the substrate from being subjected to the drying treatment in a state in which the cleaning treatment is not performed. Further, as the substrate is conveyed, the tip end portion reaches the position of the second supply means, and the cleaning liquid supplied from the second supply means and the cleaning liquid supplied from the first i and the supply means are joined to each other on the substrate. The unflowed portion of the side is eliminated, and the second supply is included in the surface of the substrate. The upstream side of the position of the mechanism is widely covered by the liquid layer 139254.doc 201005854 of the cleaning liquid, and the drying mechanism of the second supply means squirts the liquid to the substrate so covered by the liquid layer. The layer is removed, whereby the portion subjected to the cleaning treatment once the cleaning liquid flows down (the liquid layer in which the cleaning liquid is formed) can be effectively prevented from being exposed to the ambient gas before the drying treatment, and as a result, the cleaning liquid can be prevented from being attached again to the cleaning liquid. Water marks on the exposed portion are formed in the first place. Further, in the item i, it is preferable that the cleaning liquid supply means includes a third supply means provided in the second supply in the substrate transfer direction.

Further, the j-stage is provided on the upstream side, and the range of the cleaning liquid supplied by the first supply mechanism Θ ' is supplied to the surface of the transfer substrate in a cluster-like manner. According to this configuration, the liquid amount of the cleaning liquid flowing down the substrate can be sufficiently ensured: the liquid layer of the cleaning liquid can be formed more reliably and satisfactorily on the surface of the substrate. In the case of the clearing, it is generally considered that when the cleaning liquid is supplied from the third supply mechanism in a cluster form, the spray of the cleaning liquid adheres to the substrate after the drying process, and the like is formed. Therefore, when the third supply mechanism is provided, it is preferable that a shielding member is provided between the second supply mechanism and the drying mechanism to prevent the cleaning liquid from flying toward the downstream side of the second supply mechanism. In the above apparatus, the second supply means may be provided in a direction orthogonal to the direction in which the upper (10) is fed, but in the case where the gas is ejected by the drying means, it is preferable that the lower side of the substrate is The supply position of the cleaning liquid is located on the downstream side of the supply position on the upper side, and is inclined in a direction orthogonal to the conveyance direction. According to the configuration, "the front end of the substrate passes through the position of the second supply means is not long", and the exposed portion of the substrate surface 139254.doc 201005854 is easily generated at the upper end portion (i.e., the corner portion) of the front end. Therefore, when the self-drying mechanism ejects the gas to the substrate passing through the position of the second supply mechanism, the exposed portion is used as a base point, and the liquid layer of the cleaning liquid is maintained in a good layer state while being along the corner portion of the substrate. The basin surface is removed smoothly and quickly. Therefore, it is possible to prevent a phenomenon in which liquid layer flying or foaming (foaming) may occur due to ejection of gas when the liquid layer of the cleaning liquid is removed, which may cause water mark formation. Further, the drying mechanism may be disposed so as to be inclined with respect to the direction orthogonal to the conveyance direction so that the gas injection position on the lower side of the substrate is located further downstream than the gas injection position on the upper side. According to this configuration, the liquid layer can be removed along the surface from the end portion (corner portion) on the upper side of the substrate, and the same as described above can be used to prevent splashing or foaming of the liquid layer. When the above-described configuration of the first supply mechanism is obliquely disposed in the direction in which the conveyance directions are orthogonal to each other, it is very effective in smoothly removing the liquid layer of the cleaning liquid. Further, in the above apparatus, the above-mentioned first supply mechanism includes a slanting member disposed along the conveying direction and inclined in a direction orthogonal to the conveying direction; and a nozzle member disposed above the slanting member along the conveying direction; When the cleaning liquid is ejected from the member, the cleaning liquid is continuously supplied in the transport direction, and the substrate is supplied to the transport substrate. With this configuration, the substrate can be satisfactorily supplied in a continuous state along the transport direction. In this case, the processing liquid supply means may be configured to supply the processing liquid different from the cleaning liquid to the transport substrate to the transport substrate. 139254.doc 201005854 a plate, wherein the substrate is subjected to a specific treatment other than the cleaning treatment before the cleaning treatment of the cleaning liquid; in this case, the processing liquid supply mechanism may be disposed along the inclined member along the inclined member. In the upper nozzle member, the cleaning liquid is ejected from the nozzle member from the nozzle member, and the processing liquid is continuously supplied to the transport substrate while being formed in the transport direction. Λ According to this configuration, the tilt member can be shared and processed. The liquid and the cleaning liquid are sequentially supplied to the substrate, so that the specific treatment of the treatment liquid and the subsequent cleaning treatment can be appropriately configured. On the other hand, the substrate processing method of the present invention includes the following steps: a liquid layer formation step, Supporting the substrate having water repellency in a posture in which the surface is inclined, and transporting the substrate along the surface in the horizontal direction, and supplying the cleaning liquid to the upper end portion of the substrate and flowing it down, thereby self-transporting on the surface of the substrate The directional front end portion sequentially forms a cleaning liquid over the entire direction orthogonal to the conveying direction a liquid layer; and a liquid layer removing step, wherein the liquid layer is sequentially sprayed on the liquid layer from the end side on which the liquid layer t substrate is formed, thereby removing the liquid layer. According to the method, While the substrate is being conveyed, the cleaning liquid is applied to the surface of the cleaning liquid to form a liquid layer of the cleaning liquid, and the substrate is subjected to a cleaning treatment. Then, the liquid layer is directly removed and dried, thereby effectively preventing the substrate from being dried. The portion subjected to the cleaning treatment once the liquid layer is formed is exposed to the ambient gas before the drying treatment of the blast gas. In the method, preferably, the method includes the following steps: spraying the gas in the liquid layer removing step Previously, at the front end of the transfer direction of the substrate and 139254.doc 201005854, the upper end portion 'forms a portion of the substrate surface exposed from the liquid layer; in the liquid layer removing step, from the exposed portion side of the substrate surface Spray gas. According to this method, the liquid layer can be smoothly and quickly removed without accompanying splashing or foaming (foaming) of the liquid layer of the jetting gas. [Effects of the Invention] According to the present invention, even when the substrate having the water repellency is conveyed, the substrate is sequentially cleaned and the respective processes (4) are performed, thereby preventing the substrate from being dried in a state where the cleaning process is not performed. In the case of the treatment, the portion subjected to the cleaning treatment once the liquid layer of the cleaning liquid is formed is exposed to the ambient gas towel immediately after the drying treatment, and the water cleaning is caused by the cleaning liquid adhering to the exposed portion again. ^. Therefore, it is possible to perform various processes of cleaning and drying the substrate while carrying the water-repellent substrate. [Embodiment] A preferred embodiment of the present invention will be described with reference to the drawings. Fig. 1 shows the application of the present invention. An example of a substrate processing apparatus. The substrate processing apparatus 1 (hereinafter referred to as the apparatus (10) is a pre-processor for performing laser annealing on a glass substrate 3 (hereinafter simply referred to as a substrate s) on which an amorphous fracture layer is formed. In the case of Zhao, the substrate s is sequentially applied to the oxide film formed on the surface of the layer, and the cleaning and drying are carried out. 1C is placed in a row to include the drying chamber 1D. And the unloader 1E, the apparatus 1A, the etching chamber 丨B, and the cleaning chamber are driven by the transport roller 2, 139254.doc 201005854, and the rectangular substrate s carried by the transport robot (not shown) to the carrier 丨A is transported to each In the processing chambers 1B to 1D (in the right direction in the drawing!), the respective processes of etching, cleaning, and drying are sequentially performed on the substrate s, and then the substrate 8 is transferred to the unloader 1E. (7) The substrate s is transferred to the laser annealing apparatus by a transport robot (not shown). In the following description, the transport direction of the substrate S is simply referred to as "transport direction". "Upstream", "downstream", "front end", and "back end" are based on the transport direction of the substrate S. β Each transport roller 2 is configured to be inclined along a direction orthogonal to the transport direction (see Fig. 2). Therefore, the substrate 8 is slanted from the rear side of the device toward the front side toward the front side, and the substrate is transported in the horizontal direction along the surface of the substrate 8. Further, in the same figure, the symbol 3 is used. The opening for substrate transfer formed on the partition wall of each of the chambers 1A to 1E, the opening portion 3 having an elongated rectangular shape and being provided in a sufficient size (4) to 1B for passing the substrate 8 for The substrate s is supplied to the (four) liquid supply mechanism 10. The button engraving supply mechanism 10 is disposed above the end portion of the upper side of the conveyance roller 2. As shown in Figs. 1 and 2, the rhyme supply mechanism 10 has a length. Strip-shaped inclined member ^ which has a movement on the substrate s An inclined surface m that extends in the feeding direction and that is inclined forward and downward from the rear side of the apparatus toward the front side in a direction perpendicular to the 〇 direction, and an elongated nozzle structure (four), 12, which are respectively disposed on the inclined member 13 Above and along the inclined member ^. The nozzle members η, 12 include 139254.doc 201005854, such as a spray nozzle, which is provided with a plurality of liquid holes downward at a specific interval along the length direction, for example, along the inclined surface The Ua is arranged in parallel with each other in the front and rear state. Further, the nozzle member u of the upper side (rear side) of the nozzle members u and 12 is connected to the supply source of ozone (〇3) water through the pipe 16 including the opening and closing valve 16a. On the other hand, the nozzle member 12 of the lower side (front side) is connected to the supply source of the hydrofluoric acid (hereinafter referred to as hydrofluoric acid) by the piping 7 including the opening and closing valve 7a. In other words, the etching liquid supply mechanism 10 is configured to eject ozone water (or hydrofluoric acid) from the nozzle member n (or 12) to the inclined surface Ua, and to drop the ozone water (or gas acid) along the inclined surface 13a. The ozone water (or hydrofluoric acid) is supplied to the upper end portion of the substrate s while the odor water (or hydrofluoric acid) flowing in the transport direction is formed, and the opening and closing valves 16a and i7a are further configured. The operation is to switch the type of the etching liquid supplied to the substrate S. (Ozone water fluoric acid p is hereinafter referred to as "four liquid" as described below in order to promote the oxidation of the substrate S as described below. In the sense of the treatment liquid used in the etch chamber 18, it will be described as an etchant for convenience. The etchant supply mechanism 10 is disposed over the upper side of the substrate S in a state where the substrate 8 is stopped. In the method of supplying the etching liquid, the size of the crucible in the transport direction is set to be sufficiently longer than the size of the substrate 8. Further, the nozzle member 11 and/or the nozzle member 12 may be further passed through the piping and the cleaning water including the opening and closing portions. Supply source of (pure water) After the etching process, the cleaning water is supplied to the substrate s, and the cleaning process is started in the etching chamber 1B before the cleaning process in the cleaning chamber 1c. The cleaning chamber 1C is disposed to supply the cleaning water to the substrate s ( Purified water supply mechanism of pure water) (corresponding to the cleaning liquid supply mechanism according to the present invention) 139254.doc •12· 201005854 The third type 3 is provided for the cleaning water supply mechanism as shown in Figs. 1 to 5 The first feeding means 20, 24, and 26. The second: = is disposed above the upper end portion of the conveying roller 2. The mechanism 20 has a long inclined member 22, ::: = An inclined surface 22a that is orthogonal to the transport direction from the rear side to the other side; the elongated shape is disposed above the inclined member 22 and extends along the nozzle. The nozzle structure (4) includes For example, an injection nozzle that faces the lower hole at a specific interval along the longitudinal direction is connected by a supply source including a pipe for opening and closing the valve. That is, the first supply mechanism (10) has the same as the above-described liquid supply mechanism 1_ The structure is configured to eject the inclined member 22 from the nozzle structure (4) Water, and the washing water dropping along the inclined surface 22a, formed on the side _ whereby the conveyance direction of the washing water is supplied to the side end portion on the substrate (iv) S. ^ A flow

Further, the downstream end portion of the first supply mechanism 20 is provided to a position adjacent to the vicinity of the partition wall of the cleaning chamber 1C and the drying chamber 1D. The second supply mechanism 24 includes a so-called slit nozzle including a slit-like liquid discharge hole, and is disposed on the downstream side of the second supply mechanism 2A as shown in Figs. 3 to 5 . The second supply mechanism 24 is formed in a direction from the upper side of the transport substrate s to the lower side thereof (corresponding to the traverse direction of the second substrate of the present invention), and a fixed gap can be formed between the second substrate and the transfer substrate S. The manner is set in a posture inclined in the front-rear direction of the apparatus, and is connected to the above-mentioned supply source of π-washing water through a pipe Μ including the opening and closing valve 28a. By this, the second supply means supplies the washing water to the substrate S passing therebelow in a state in which it is continuous in the front-rear direction of the apparatus. 139254.doc -13· 201005854 As will be described in more detail, the second supply mechanism 24 sets the posture of the substrate surface t in the direction of the father of the substrate surface, and further, as shown in FIG. 3 and As shown in Fig. 5, the upper end (rear side) end portion is disposed close to the downstream side end portion of the first supply mechanism 20, and the supply position of the washing water with respect to the lower side of the substrate S is located on the upper side. The manner in which the supply position is further downstream is set to be only inclined by a degree 91 with respect to the direction orthogonal to the conveyance direction. This angle (4) is set in the range of 5° to 10° in this embodiment. The third supply mechanism 26 includes injection nozzles that extend in the transport direction and are provided with a plurality of liquid discharge holes at a predetermined interval along the length_direction, as shown in FIG. 5, above the transport path of the substrate 8, along the path The inclination of the conveying roller 2 is arranged at a fixed interval with a plurality of roots. The third supply mechanism 26 is disposed so as to be disposed inside the both ends of the second supply mechanism 20 in the transport direction, that is, in the range in which the cleaning liquid is supplied by the i-th supply mechanism 20, and passes through The common pipe 29 including the opening and closing valve is connected to the above-described supply source of the washing water. Thereby, the third supply mechanism 26 supplies the washing water in a cluster shape over a wide area on the surface of the substrate S. Further, in the cleaning chamber 1C, a shielding plate 25 is provided between the second supply mechanism 24 and the partition wall on the downstream side thereof (the partition cleaning chamber 1C and the partition wall id are partitioned). The shielding plate 25 is configured to prevent the spray (spray-like washing water) generated by the third supply mechanism 26 from being sprayed with the washing water from splashing on the downstream side of the second supply mechanism 24 and adhering to the substrate s. In the middle, the shielding plate 25 and the partition wall (the partition wall 1C and the partition wall id are partition walls) correspond to the shielding member according to the present invention. 139254.doc • 14- 201005854 The air-drying chamber ID is provided with an air knife 30 (corresponding to the drying mechanism according to the present invention), and the air knife 30 removes the washing water by spraying air onto the substrate 8, thereby drying the substrate S. The air knife 30 includes a slit nozzle including a slit-shaped air ejection hole, as shown in FIGS. 3 to 5, which is disposed near the partition wall of the cleaning chamber 1 (: and the drying chamber (1) The second supply mechanism 24 is disposed in the direction from the upper side of the transport substrate S to the lower side thereof (corresponding to the second substrate traverse direction of the present invention), and between the transfer substrate s It can be formed in a manner of having a fixed gap in an inclined posture along the front-rear direction of the apparatus, and is connected to the air supply source through a pipe 32 including the opening and closing valve 32a, whereby the air knife 30 is continuous with the substrate S in the front-rear direction of the apparatus. In the air supply, the air knife 30 is slightly pointed toward the opening 3 so that the portion of the transport substrate S passing through the opening 3 is ejected in the oblique direction from the downstream side in the transport direction. Further, as shown in FIG. 3, the air knife 30 is disposed to be transported relative to the air supply position 10 on the lower side of the substrate 8 so as to be located on the downstream side of the injection position on the upper side. Direction orthogonal The direction is only inclined by a specific angle θ2. This angle Θ2 is set within the range of 5 to 30 in the present embodiment. In addition, in the present embodiment, air is used to remove the liquid layer, but nitrogen may be applied. Next, the inert gas is used. Next, the processing operation of the substrate S in the apparatus 1 and its action will be described. The substrate S is carried into the carrier 1' and the substrate S is transported to the etching by the driving of the transport roller 2. After a specific position in the vicinity of the chamber 1 first, 139254.doc 15 201005854 is first supplied to the ozone water by the money engraving supply mechanism 10. Specifically, the ozone is ejected from the inclined member 13 from the nozzle member u by the operation of the opening and closing valve 16a. Water, whereby the ozone water will fall along the inclined surface 13a. Therefore, 'the substrate S is carried into the etching chamber 1B by the driving of the conveying roller 2, and the upper side end portion of the substrate S is sequentially supplied from the front end side. Ozone water. The ozone water supplied to the substrate S falls along the surface of the substrate 8, whereby a liquid layer is formed on the surface of the substrate s. Thereby, the oxidation of the surface of the substrate is promoted. That is, the substrate is promoted in this way. S oxidation The fine particles adhering to the surface of the substrate S are sealed in the oxide film. After the front end of the substrate S is transferred to the vicinity of the downstream end of the etching liquid supply mechanism ,, the substrate S is stopped, and the substrate S is continuously supplied with ozone for a fixed period of time. After the water, the type of the etching liquid is switched from the ozone water to the gas acid by the operation of the opening and closing valves 16a and 17a. Similarly, the hydrofluoric acid supplied to the substrate s falls along the surface of the substrate s, thereby being on the substrate S. A liquid layer is formed on the surface of the substrate. The oxide film formed on the substrate s is removed. Further, when the fluoric acid is supplied to the substrate s for a fixed period of time, the transfer roller 2 is driven to restart the transfer of the substrate s, and the substrate s is opened and closed. The valves 27a, 28a, and 29a are operated to supply the washing water to the respective supply mechanisms 20, 24, and 26 in the cleaning chamber 1 (in the cleaning chamber 1). At this time, the supply mechanism 2 is supplied with the washing water by dropping the washing water sprayed from the nozzle member 21 to the inclined member 22 along the inclined surface 22a. Therefore, when the substrate S is carried out from the etching chamber 1B and carried into the cleaning chamber 1 (:, the cleaning water is sequentially supplied to the substrate s from the front end side of the substrate s. As supplied from 139254.doc 16 201005854 The cleaning water of the substrate s falls along the surface of the substrate s, whereby a liquid layer is formed on the surface of the substrate S. The sulphuric acid and the cleaning water on the surface of the substrate are replaced to clean the substrate s, and the cleaning is prevented. The surface of the substrate is exposed (exposed) to the ambient gas. Further, when the substrate s is further conveyed, the opening and closing valve 32a is operated, and air is ejected from the air knife 30 in the drying chamber 1D at a specific timing. When the S reaches the position of the second supply mechanism 24, the second supply mechanism 24 continuously supplies the washing water in the longitudinal direction of the apparatus, and the air ejected from the air knife 30 is ejected to the substrate S as it is transported. The substrate S is passed through the portion of the second supply mechanism 24. Thereby, as the substrate 3 is transported from the cleaning chamber 1C to the drying chamber 1D, the liquid layer of the washing water on the surface of the substrate is removed by air pressure, and the substrate 8 is dried. Processing. Further, after the substrate S is transferred to the drying chamber 1 and transported to the unloader 1E, the device is finished and the substrate s is processed. Further, the surface of the substrate s subjected to the etching treatment is strong. In the cleaning process of the cleaning chamber 1C, the cleaning water flow supplied from the second supply mechanism 20 and falling along the substrate S is likely to be biased toward the center of the conveyance direction until the substrate S reaches the second supply mechanism 24. A portion where the washing water does not fall (referred to as an undropped portion) is formed on the lower end portion of the front end portion and the rear end portion of the substrate s (refer to FIG. 8(a)). However, when the substrate 8 passes through the second supply mechanism 24, Since the washing water is supplied to the undropped portion, the substrate 8 is not dried in a state where the cleaning process is not performed. When the front end of the substrate s reaches the second supply mechanism 24, the second 139254.doc 201005854 The washing water supplied to the mechanism 24 and the washing water supplied from the first supply mechanism 20 and the like are merged on the substrate. As a result, the unfalling portion of the front end side disappears as shown in Fig. 6(a)~( c) shown The upstream side of the substrate s including the position of the second supply mechanism 24 is widely covered with the liquid layer of the washing water. Moreover, the air knife 30 of the second supply mechanism 24 is covered by the liquid layer. The substrate S is sprayed with air to remove the liquid layer, thereby effectively preventing the portion where the cleaning process is performed once the cleaning water is dropped (the liquid layer in which the washing water is formed) is exposed to the ambient gas before the drying process ( Referring to Fig. 8(b)), the preventive washing water is again adhered to the exposed portion to cause a water mark. Further, as described above, the second supply mechanism 24 and the air knife 30 are orthogonal to the transport direction. The direction is only tilted by the specific angle 01, and the state is set, so that the liquid layer can be removed smoothly by spraying air. In other words, by providing the second supply mechanism 24 as described above, the cleaning water discharged to the substrate s does not expand in the transport direction but along the substrate on the downstream side of the second supply mechanism 24. As a result of the fall of S, as shown in FIG. 6(b) and FIG. 7, the substrate S is exposed from the liquid layer at the upper end portion (also, the corner portion) of the substrate leading end of the second supply mechanism 24. section. Therefore, if the air knife 30 provided in the inclined state is ejected from the substrate 8 as shown in the figure, the liquid layer of the cleaning liquid will be maintained as the base portion of the cleaning portion as shown in the figure. The front corner portion is smoothly and quickly removed along the surface of the substrate, so that the liquid layer of the washing water is well removed in a state where the air is not caused by the nozzle (4) or foaming (foaming). As described above, in the apparatus 1, even if the substrates s are washed and dried in the order of 139254.doc 18 201005854 water-repellent substrate s after the meal processing, the following cases can be prevented. That is, the substrate S is subjected to a drying treatment in a state in which the cleaning treatment is not performed, and the portion in which the cleaning treatment is performed once the liquid layer of the cleaning water is formed is exposed to the ambient gas before the drying treatment, and the washing water is washed. Attached to the exposed portion again causes a water mark to form. Therefore, the substrate S on which the amorphous germanium layer is formed on the surface can be transferred as described above, and the substrate S can be satisfactorily subjected to etching treatment, cleaning treatment, and drying treatment. In particular, since the air knife 3〇 of the second supply mechanism 24 and the drying chamber 11} is provided by tilting only the specific angles 01 and 02, it is possible to prevent the washing water from splashing or foaming due to the jet of air during the drying process. In the state of (foaming) or the like, the liquid layer of the washing water is smoothly and satisfactorily removed, so that it is possible to effectively prevent the formation of water marks with the drying treatment. That is, the water mark is caused by the long-term coexistence of oxygen and the washing water on the surface of the substrate, so that if the washing water splashes and adheres again to the part subjected to the drying treatment, or the washing water is foamed by the jet of air, When a large amount of ambient gas (oxygen) is inhaled in the washing water, the water is likely to form water marks. However, according to the above device, it is difficult to produce the above conditions in the drying process, and therefore it has the advantage of effectively preventing the formation of water marks with the drying process. . Further, as a method of performing a cleaning treatment by forming a liquid layer of a cleaning liquid on the surface of the substrate, there is also a so-called puddle treatment in which a cleaning liquid is formed on the entire surface thereof by surface tension, for example, in a horizontal posture. The liquid layer (liquid coating) is treated, but in the case of the puddle treatment, the thickness of the liquid layer formed on the surface of the substrate is thicker (the liquid amount is larger), and therefore, if it is at 139254.doc -19· 201005854 Spraying air during the drying process tends to cause foaming (foaming) in the liquid layer. In this respect, if the liquid layer is formed by dropping the cleaning liquid along the substrate s in the inclined posture as in the above-described apparatus 1 (cleaning chamber 1C), the thickness of the liquid layer is thin, and it is difficult to spray air. Foaming (foaming) in the liquid layer. Therefore, the presence of this aspect can also effectively prevent the advantage of forming a water mark with the drying process. The device 1 described above is applied to one embodiment of the substrate processing apparatus of the present invention, and the specific configuration thereof can be appropriately changed without departing from the gist of the invention. For example, in the cleaning chamber 1C of the apparatus i, the second supply mechanism 20' is configured as follows: 'the washing water sprayed from the nozzle member 2' is slid down along the inclined member 22, thereby being continuous in the conveying direction. The state supplies the washing water to the substrate s. Of course, as the first supply mechanism 2, a so-called slit nozzle having a slit-like liquid discharge port extending in the conveying direction may be applied, and the slit nozzle may be directly used from the slit nozzle. The washing water is supplied to the substrate s. In other words, the configuration is such that the cleaning water is supplied to the upper end portion of the substrate S in a state in which the conveyance direction is continuous, and the first supply mechanism 20 can be configured as described above. When the first supply mechanism 20 is a slit nozzle, the first supply mechanism 2A and the second supply mechanism may be smashed together, and the cleaning device of the device 1 may be used to illuminate the substrate. The third supply mechanism 26 for supplying water is provided in the cleaning, but the cleaning of the substrate b can be performed by, for example, only the cleaning water from the second mechanism 2G and the second supply mechanism 24 + ' can also be set to omit the I39254.doc -20· 201005854 of the third supply mechanism 26. Further, when the liquid layer is formed on the substrate S by the third supply mechanism 26, it may be set as the first! The supply mechanism 2 is disposed only in one portion (corner portion) of the lower side of the cleaning chamber 1C. Further, the inclination angle Θ1 of the second supply mechanism 24 and the inclination angle θ2 of the air knife 30 are not limited to the numerical values of the embodiment, and may be based on conditions such as the size of the substrate S so that the liquid layer can be formed and removed better. Just set it up. Further, the inclination angle Θ1 of the second supply mechanism 24 and the inclination angle θ2 of the air knife 30 may be the same or different. Further, in the apparatus 1, the surname chamber 1 and the cleaning chamber 1C are separately provided separately, but the nozzle members 11, 12 for supplying, for example, ozone water and oxyacid may be provided in the cleaning chamber 1 . (In particular, the nozzle members 11 and 12 are arranged side by side on the lower side of the nozzle member 21 constituting the first supply mechanism 2, and are switched from the respective nozzle members 11, 12, 21 by the operation of the opening and closing valve 16a or the like. According to this configuration, the etching chamber 1B ^ can be made common to the cleaning chamber 1C, so that the entire apparatus can be simplified. Further, the situation is as follows: ozone water and washing water (pure water) In addition, the nozzle member may be configured to be common, and the liquid species to be ejected may be switched according to the operation of the on-off valve. In addition, the larger substrate S may be formed on the surface of the substrate well/monthly. In the liquid layer of the water, the first supply mechanism 20 may be provided in the cleaning chamber 1C as the upper and lower stages (or plural stages). In the above embodiment, the engraving is described as an example of application of the present invention. The substrate S after the cleaning is cleaned and 139254.doc •21 - 201005854 in the case of drying treatment, but the present invention can also be applied to a device which is made to have a strong water repellency on the surface of the substrate shortly after film formation of the amorphous ruthenium layer, for example. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic cross-sectional view showing a substrate processing apparatus to which the present invention is applied. FIG. 2 is a cross-sectional view showing a configuration of an etching chamber; FIG. 4 is a schematic cross-sectional view showing a configuration of a cleaning chamber. FIG. 5 is a schematic cross-sectional view showing a configuration of a cleaning chamber. FIG. 5 is a schematic cross-sectional view showing a configuration of a cleaning chamber (FIG. κν·ν β surface view) Fig. 6 is a plan view showing a state in which the substrate is cleaned and dried in the cleaning chamber and the drying chamber, ((4) shows the state in which the substrate leading end reaches the second supply mechanism' (b) shows the substrate leading end passing mechanism The state immediately after the ' '(4) indicates that the rear end of the substrate reaches the vicinity of the second supply mechanism, and the portion of the front end portion of the substrate shown in Fig. 6(b) is surrounded by the ridge line. Large picture; and virtual picture is called (8) is the description - while the (four) oblique (four) transporting the substrate, the cleaning water is supplied to the substrate and is allowed to fall, and the dry material is __. Bianxian "cleaning and drying" [Main component symbol description]

1 1A 1B Substrate processing unit Underwear The money engraving room I39254.doc -22- 201005854

1C

ID

IE 2 10 20 ' 21 22 ❹ 24

26 30 S Cleaning chamber Drying chamber Unloader Transfer roller Etching liquid supply mechanism First supply mechanism Nozzle member Tilting member Second supply mechanism Third supply mechanism Air knife (drying mechanism) Substrate

139254.doc •23-

Claims (1)

201005854 VII. Patent application scope: 1. A substrate processing apparatus, comprising: a conveying mechanism for supporting a substrate having water repellency in a posture in which a substrate surface is inclined and transporting in a horizontal direction along the surface; cleaning The liquid supply mechanism supplies the cleaning liquid to the substrate conveyed by the transfer mechanism, and the drying mechanism is disposed on the downstream side of the substrate transfer direction from the cleaning liquid supply mechanism, and removes the cleaning liquid on the substrate by the gas pressure. And the cleaning liquid supply mechanism includes: a second supply mechanism that is disposed along the direction of the conveyance direction, and supplies the cleaning liquid to at least the upper end portion of the conveyance substrate in a state in which the cleaning liquid is continuous in the direction And a second supply mechanism that is disposed near the downstream end of the second supply mechanism and that is disposed along a traversing direction of the second substrate that traverses from the upper side of the transport substrate to the lower side thereof. The cleaning liquid is supplied to the transport substrate while the cleaning liquid in the ith substrate is continuous; the drying mechanism is close to the second supply mechanism. Traverse along a conveying feed from the upper side of the substrate to which the second substrate side of the traverse direction ® 6 bits and home, at the continuous traverse the substrate along the second direction the substrate is transferred to a state of gas injection. 2. The substrate processing apparatus according to claim 1, wherein the cleaning liquid supply mechanism further includes a third supply mechanism that is disposed on an upstream side of the second supply mechanism in a substrate transfer direction and is provided by the first supply mechanism In the range in which the cleaning liquid is supplied, the processing liquid is supplied to the surface of the transfer substrate in a cluster shape. 3. The substrate processing apparatus according to claim 2, wherein 139254.doc 201005854 is provided with a shielding member between the second supply mechanism and the drying mechanism, which prevents the cleaning liquid from splashing further downstream than the second supply mechanism. 4. The substrate processing apparatus according to any one of claims 1 to 3, wherein the 苐2 supply mechanism is such that the cleaning liquid supply position on the lower side of the substrate is located on the downstream side of the supply position on the upper side, The direction in which the transport directions are orthogonal is set obliquely. 5. The substrate processing apparatus according to any one of claims 1 to 3, wherein In the drying mechanism, the gas injection position on the lower side of the substrate is located on the downstream side of the injection position on the upper side, and is inclined with respect to the direction orthogonal to the conveyance direction. The substrate processing apparatus according to any one of the preceding claims, wherein the first supply mechanism includes: a tilting member provided along the transport direction and inclined in a direction orthogonal to the transport direction; a nozzle member disposed above the inclined member along the conveying direction to discharge a cleaning liquid from the nozzle member to the inclined member The substrate is supplied to the transport substrate while being formed in a continuous flow of the cleaning liquid in the transport direction. 7. The substrate processing apparatus according to claim 6, wherein the processing liquid supply means includes supplying the processing liquid different from the cleaning liquid to the conveying board to the conveying substrate, thereby cleaning the feeding liquid Previously, the substrate is subjected to a specific process other than the cleaning process; the process liquid supply mechanism includes a nozzle member disposed along the inclined member, and the cleaning liquid is ejected from the nozzle member to the inclined member. The process 139254.doc • 2· 201005854 is continuously formed in the above-described transport direction and supplied to the transport substrate. 8. A substrate processing method, comprising: a liquid layer forming step of supporting a substrate having water repellency in a posture in which the surface is inclined, and transporting in a horizontal direction along the surface, along the substrate The cleaning liquid is supplied to the upper end portion, and the liquid layer of the cleaning liquid is formed on the surface of the substrate from the front end portion of the substrate in the direction orthogonal to the conveying direction. The removing step 'sjects gas to the liquid layer sequentially from the front end 9 side of the substrate on which the liquid layer is formed, thereby removing the liquid layer. 9. The substrate processing method according to claim 8, wherein before the ejection of the gas in the liquid layer removing step, the step of forming a portion of the substrate surface exposed from the liquid layer is formed at a front end of the substrate in the transport direction and at an upper end portion thereof. The gas is sequentially ejected from one side of the exposed portion of the substrate surface in the liquid layer removing step. 139254.doc