TW201005854A - Device and method for treating substrate - Google Patents

Device and method for treating substrate Download PDF

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Publication number
TW201005854A
TW201005854A TW98108986A TW98108986A TW201005854A TW 201005854 A TW201005854 A TW 201005854A TW 98108986 A TW98108986 A TW 98108986A TW 98108986 A TW98108986 A TW 98108986A TW 201005854 A TW201005854 A TW 201005854A
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Taiwan
Prior art keywords
substrate
supply mechanism
liquid
cleaning
cleaning liquid
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TW98108986A
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Chinese (zh)
Inventor
Eiji Yamashita
Kazuo Jodai
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Dainippon Screen Mfg
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Publication of TW201005854A publication Critical patent/TW201005854A/en

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  • Cleaning By Liquid Or Steam (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Liquid Crystal (AREA)
  • Cleaning In General (AREA)

Abstract

To clean and dry a substrate having water repellency while conveying it. The device for treating a substrate having a cleaning chamber 1C and a drying chamber 1D carries out cleaning and drying of the surface of the substrate S having water repellency while conveying it in a slanted posture. The cleaning chamber 1C is equipped with a first supplying means 20 for supplying washwater to the upper end part of the substrate S continuously in the direction of conveying and a second supplying means 24 that is installed near the end of the downstream side along the direction of crossing the substrate S from its upper part to its lower part and is designed to supply washwater to the substrate S continuously in the above direction. The drying chamber 1D is equipped with an air knife 30 for jetting air to the conveyed substrate S that is installed near the second supplying means 24 along the direction of crossing the substrate S from its upper part to its lower part.

Description

201005854 六、發明說明: 【發明所屬之技術領域】 本發明係關於一種對LCD(Liquid Crystal Display,液晶 顯示裝置)或PDP(Plasma Display Panel,電漿顯示面板)(電 漿顯示器)等FPD(Flat Panel Display,平板顯示器)用玻璃 基板、有機EL(Eleetro-Luminescence,電致發光)用玻璃基 •板、光碟用基板、光罩用玻璃基板、半導體晶圓等基板主 要實施清洗、乾燥處理之基板處理裝置等。 φ 【先前技術】 LCD係於玻璃基板上設有包含薄膜電晶體之高性能電路 來謀求畫質提高及視角之擴大,近年來較多地使用設有如 下多晶矽(polysilicon)薄膜電晶體者,該多晶矽薄膜電晶 體之電子遷移速度高,且於顯示之響應性及對比度方面較 為有利。 此種LCD之製造中’將例如非晶矽層形成於玻璃基板 上’去除該矽層表面之自然氧化膜(蝕刻處理)後,實施清 ❹ 洗、乾燥處理’照射雷射而使非晶矽層熔融再結晶化(生 成多晶矽層)(雷射退火法)。該情形時,先前蝕刻〜乾燥之 -各步驟係以如下方式實施,即於水平支撐著形成有非晶矽 .層之玻璃基板之狀態下,以基板之中心位置為支點使該基 板繞鉛直軸旋轉,依序向該基板上供給處理液而對基板實 施蝕刻以及清洗處理,然後使基板高速旋轉甩掉清洗液來 進行乾燥(旋轉乾燥)。 此種基板處理中’因已將氧化膜去除之蝕刻處理後之基 139254.doc 201005854 板具有較強之撥水性,故而於清洗處理後,基板上容易殘 存有零星之清洗液,此現象係稱作所謂水痕之形成不均勻 氧化膜的原因之一。水痕會使藉由雷射退火而生成之多晶 矽層之特性惡化’故而必需極力防止其之產生,先前如例 如專利文獻1所揭示般,一邊使基板低速旋轉一邊供給清 洗液,於基板整個表面上在表面張力之作用下形成有清洗 液之液膜的狀態下實施清洗處理,然後切換為高速旋轉而 於短時間内一不子將清洗液去除、乾燥。亦即,一邊避免201005854 VI. Description of the Invention: [Technical Field] The present invention relates to an FPD (Flat) such as an LCD (Liquid Crystal Display) or a PDP (Plasma Display Panel) (plasma display) A substrate for cleaning and drying a substrate such as a glass substrate, a glass substrate for an organic EL (Eleetro-Luminescence), a substrate for a disk, a glass substrate for a photomask, or a semiconductor wafer. Processing device, etc. φ [Prior Art] LCD is provided with a high-performance circuit including a thin film transistor on a glass substrate to improve image quality and expand the viewing angle. In recent years, a polysilicon film transistor having the following polycrystalline silicon is used. The polycrystalline germanium film transistor has a high electron mobility and is advantageous in terms of display responsiveness and contrast. In the manufacture of such an LCD, for example, an amorphous germanium layer is formed on a glass substrate, and a natural oxide film (etching treatment) on the surface of the germanium layer is removed, and then subjected to cleaning and drying treatment to irradiate a laser to make an amorphous germanium. The layer is melted and recrystallized (forming a polycrystalline germanium layer) (laser annealing method). In this case, the previous etching-drying-steps are carried out in such a manner that the substrate is wound around the vertical axis with the center position of the substrate as a fulcrum in a state in which the glass substrate on which the amorphous germanium layer is formed is horizontally supported. By rotating, the processing liquid is supplied to the substrate in this order, and the substrate is etched and cleaned, and then the substrate is rotated at a high speed to remove the cleaning liquid and dried (rotary drying). In the substrate processing, the 139254.doc 201005854 plate after the etching treatment for removing the oxide film has a strong water repellency, so that after the cleaning process, a sporadic cleaning liquid easily remains on the substrate. One of the reasons for the formation of a non-uniform oxide film by water marks. The water mark deteriorates the characteristics of the polysilicon layer formed by the laser annealing. Therefore, it is necessary to prevent the occurrence of the polycrystalline germanium layer. For example, as disclosed in Patent Document 1, the cleaning liquid is supplied to the entire surface of the substrate while rotating the substrate at a low speed. The cleaning process is performed in a state in which the liquid film of the cleaning liquid is formed under the action of the surface tension, and then the rotation is switched to high-speed rotation, and the cleaning liquid is removed and dried in a short time. That is, while avoiding

長期產生基板表面⑷上氧以及清洗液共存之成為生成水 痕之要因的狀態,-邊對基板進行清洗、乾燥,以此來防 止水痕之產生。 [專利文獻1] 曰本專利特開2003-17461號公報 【發明内容】 [發明所欲解決之問題] 然而,近年來,被處理基板趨於大型化,如專利文獻i 般一邊使基板旋轉-邊實施清洗、乾燥處理之事情在實體φ 上將越來越難以實現。因此’必需在不使基板旋轉之狀態 下良好地對基板進行清洗、乾燥處理。 由此,作為其一之方法係考慮如下:一邊以傾斜姿勢搬 送基板,-邊如圖8⑷所示藉由沿著搬送方向設置之液體 喷嘴50而沿著基板S之上位侧端部供給清洗液,藉由使清 洗液沿著基板S落下而-邊使基板表面由清洗液之液層覆 蓋一邊實施清洗處理,其後藉由氣體喷嘴52而對基板喷射 139254.doc -4- 201005854 氣體,自搬送方向之前端側起依序去除該液層。 然而,若使清洗液沿著具有撥水性之基板8落下,則會 存在清洗液一邊在其表面張力之作用下集中於基板之中央 部分(搬送方向上之中央部分)一邊落下的傾向,其結果如 同圖中影線所示,基板s之前端(搬送方向前端)以及後端 將會產生清洗液並未落下之部分(未落下部分)。而且即 便進行基板之搬送亦會保持該狀態,故而如圖8(b)所示, 會產生在未實施清洗處理之狀態下轉移至乾燥處理之部分 (同圖中之影線部分)。又,即便係實施了清洗處理之部 刀,亦會存在如下問題:隨著基板之搬送而產生乾燥處理 前清洗液並未落下之部分(同圖中以各點所示之部分),例 如該部分上附著有清洗液之液滴等而導致形成水痕。因 此’期望解決該等問題。 本發明係鑒於上述情況而完成者,其目的在於一邊搬送 具有撥水性之基板,一邊良好地進行基板之清洗、乾燥處 理。 [解決問題之技術手段] 為了解決上述問題,本發明係一種基板處理裝置,其包 括搬送機構,其係以表面傾斜之姿勢支撐具有撥水性之 基板,且沿著上述表面於水平方向上進行搬送;清洗液供 給機構,其係對由上述搬送機構所搬送之基板供給清洗 液,及乾燥機構,其係設於較該清洗液供給機構更基板搬 、、向下游側藉由氣趙壓力而去除基板上之清洗液;且 構成如下:上述清洗液供給機構包括:第1供給機構,其 139254.doc 201005854 係沿著上述搬送方向而設置’且於該方向上清洗液連續之 狀態下’對搬送基板之至少上位側端部供給清洗液;及第 2供給機構,其係靠近該第1供給機構之下游側端部,且沿 著從搬送基板之上位側橫越至其下位側之第1基板橫越方 向而設置,於沿著該第1基板橫越方向清洗液連續之狀態 下對搬送基板供給清洗液;上述乾燥機構係靠近上述第2 供給機構,且沿著從搬送基板之上位側橫越至其下位側之 第2基板橫越方向而設置,於沿著該第2基板橫越方向連續 之狀態下對搬送基板喷射氣體。 根據該基板處理裝置,自第丨供給機構對搬送基板之上 位側端部供給清洗液並使其流下,藉此可一邊於基板表面 上形成清洗液之液層,一邊對該基板實施清洗處理。而 且構成為罪近第1供給機構之下游側端部而設有第2供給 機構,且藉由該第2供給機構而沿著第i基板橫越方向供給 清洗液,因此即便於搬送方向前端部以及後端部產生清洗 液未流下部分,亦可藉此良好地㈣對清洗、乾燥處理之 H即’即便產生如上述之未流下部分,於基板通過第 2供給機構之位置時亦可對該未流下部分供給清洗液。因 此可防止產生在出現有未實施清洗處理之部分之狀態下 對基板實施乾燥處理的情況。又,隨著基板搬送而其前端 部到達第2供給機構之位置,自第2供給機構供給 之清洗液 、自第1 i、給機構供給之清洗液就於基板上合流,其結 果’基板前端側之未流下部分消A,基板表面中包含第2 供、。機構之位置在内的其上游側廣泛地受到清洗液之液層 139254.doc 201005854 覆蓋而且,自罪近第2供給機構之乾燥機構對如此由液 層覆蓋之狀態的基板喷射氣體而將該液層去除,藉此可有 效地防止一旦清洗液流下(形成有清洗液之液層)而實施了 清洗處理之部分於乾燥處理前露出於環境氣體中,其結 果可防止起因於清洗液再次附著於該露出部分上之水痕 形成於未然。 再者,於該裳i中,較好的是上述清洗液供給機構包括 第3供給機構,其係設置於較基板搬送方向上之上述第2供For a long period of time, the oxygen and the cleaning liquid coexist on the substrate surface (4) to form a water mark, and the substrate is cleaned and dried to prevent the occurrence of water marks. [Problem to be Solved by the Invention] However, in recent years, the substrate to be processed has become larger, and the substrate has been rotated as in Patent Document i - The practice of cleaning and drying is becoming more and more difficult to achieve on the entity φ. Therefore, it is necessary to satisfactorily clean and dry the substrate without rotating the substrate. Therefore, as one of the methods, the substrate is transported in an inclined posture, and the cleaning liquid is supplied along the upper end portion of the substrate S by the liquid nozzle 50 provided along the transport direction as shown in FIG. 8 (4). The cleaning process is performed by dropping the cleaning liquid along the substrate S while the substrate surface is covered by the liquid layer of the cleaning liquid, and then the liquid nozzle 52 is used to spray 139254.doc -4- 201005854 gas to the substrate. The liquid layer is sequentially removed from the front end side in the transport direction. However, when the cleaning liquid is dropped along the water-repellent substrate 8, the cleaning liquid tends to concentrate on the central portion of the substrate (the central portion in the transport direction) by the surface tension, and the result is lowered. As shown by the hatching in the figure, the front end of the substrate s (the front end in the transport direction) and the rear end will produce a portion (not dropped) where the cleaning liquid does not fall. Further, even if the substrate is conveyed, the state is maintained. Therefore, as shown in Fig. 8(b), a portion which is transferred to the drying process (the hatched portion in the same figure) in a state where the cleaning process is not performed is generated. Further, even if the knives are subjected to the cleaning process, there is a problem in that, as the substrate is conveyed, a portion where the cleaning liquid does not fall before the drying process (the portion shown by each point in the same figure) is generated, for example, A droplet of the cleaning liquid or the like is attached to the portion to cause water marks to form. Therefore, it is expected to solve these problems. The present invention has been made in view of the above circumstances, and an object of the present invention is to perform a cleaning and drying process of a substrate while carrying a substrate having water repellency. [Means for Solving the Problems] In order to solve the above problems, the present invention is a substrate processing apparatus including a transport mechanism that supports a substrate having water repellency in a posture in which the surface is inclined, and transports in a horizontal direction along the surface a cleaning liquid supply mechanism that supplies a cleaning liquid to the substrate conveyed by the conveying mechanism, and a drying mechanism that is disposed on the substrate more than the cleaning liquid supply mechanism, and is removed by the gas pressure on the downstream side. The cleaning liquid on the substrate is configured as follows: the cleaning liquid supply mechanism includes a first supply mechanism, and 139254.doc 201005854 is provided along the transport direction and is in a state in which the cleaning liquid is continuous in the direction. The cleaning liquid is supplied to at least the upper end portion of the substrate; and the second supply mechanism is adjacent to the downstream end portion of the first supply mechanism, and is traversed to the first substrate from the upper side of the transfer substrate to the lower side thereof. Provided in a traverse direction, the cleaning liquid is supplied to the transport substrate while the cleaning liquid is continuous in the traverse direction of the first substrate; the drying mechanism The second supply means is disposed adjacent to the second substrate traversing from the upper side of the transport substrate to the lower side thereof, and is ejected to the transport substrate while continuing in the traverse direction of the second substrate. gas. According to the substrate processing apparatus, the cleaning liquid is supplied from the second supply end to the upper end portion of the transfer substrate, and the cleaning liquid can be applied to the substrate while the liquid layer of the cleaning liquid is formed on the surface of the substrate. In addition, since the second supply mechanism is provided in the downstream end portion of the first supply mechanism, and the cleaning liquid is supplied in the traverse direction of the i-th substrate by the second supply mechanism, the front end portion of the conveyance direction is provided. And the rear end portion generates a portion where the cleaning liquid does not flow down, and the (H) cleaning and drying treatment H, that is, even if the unflowed portion is generated as described above, when the substrate passes through the position of the second supply mechanism, The cleaning liquid is supplied to the unflowed portion. Therefore, it is possible to prevent the substrate from being subjected to the drying treatment in a state in which the cleaning treatment is not performed. Further, as the substrate is conveyed, the tip end portion reaches the position of the second supply means, and the cleaning liquid supplied from the second supply means and the cleaning liquid supplied from the first i and the supply means are joined to each other on the substrate. The unflowed portion of the side is eliminated, and the second supply is included in the surface of the substrate. The upstream side of the position of the mechanism is widely covered by the liquid layer 139254.doc 201005854 of the cleaning liquid, and the drying mechanism of the second supply means squirts the liquid to the substrate so covered by the liquid layer. The layer is removed, whereby the portion subjected to the cleaning treatment once the cleaning liquid flows down (the liquid layer in which the cleaning liquid is formed) can be effectively prevented from being exposed to the ambient gas before the drying treatment, and as a result, the cleaning liquid can be prevented from being attached again to the cleaning liquid. Water marks on the exposed portion are formed in the first place. Further, in the item i, it is preferable that the cleaning liquid supply means includes a third supply means provided in the second supply in the substrate transfer direction.

給j構更上游側,且藉由上述第丨供給機構而供給清洗液 之範圍Θ ’對搬送基板之表面射叢狀地供、給處理液。 根據該構成’可充分確保沿著基板流下之清洗液之液 量:可更確實且良好地於基板表面上形成清洗液之液層。 該清形時’一般認為若自第3供給機構射叢狀地供給清 洗液,則清洗液之喷霧會附著於乾燥處理後之基板上等而 成為,痕之形成原因。因此,當設有第3供給機構時,較 好的是,於第2供給機構與乾燥機構之間設有遮蔽構件, 其係阻止清洗液向較第2供給機構更下游側飛滅。 者於上述裝置中,上述第2供給機構亦可設於與上 ⑽送方向正交之方向上’但於藉由乾燥機構喷射氣體而 #地去除之方面’較好的是以基板下 位側之清洗液之供給位置位於較上位側之供給位置更下游 側的方式,對於與搬送方向正交之方向傾斜設置。 據5乂構《於基板刚端通過第2供給機構之位置後不 久’容易於該前端之上位側端部(亦即角部)產生基板表面 139254.doc 201005854 露出之部分。因此,若自乾燥機構對通過第2供給機構之 位置之基板噴射氣體,則會以該露出部分為基點,清洗液 之液層-邊良好地保持其層狀態,—邊自基板角部沿著盆 表面平順且快速地被去除。因此,可良好防止因去除清洗 液之液層時喷射氣體而產生液層飛錢或起泡(發泡)等可能 成為水痕形成原因之現象。 又’至於上述乾燥機構,亦可以基板下位側之氣體喷射 位置位於較上位側之氣體喷射位置更下游側的方式,相對 於與上述搬送方向正交之方向傾斜設置。 根據該構成’可自基板上位側之端部(角部)沿著其表面 將液層去除,與上述相同’於防止液層飛濺或起泡(發旬 j方面有效。尤其,若與對於與搬送方向正交之方向傾斜 设置第1供給機構的上述構成併用,則於平順地去除清洗 液之液層之方面非常有效。 又,於上述裝置中’較好的是’上述第】供給機構包 括.傾斜構件,其係沿著上述搬送方向設置,且向與該搬 送方向正交之方向傾斜;及喷嘴構件,其係沿著上述搬送 方向配置於該傾斜構件之上方;藉由自該噴嘴構件對上述 傾:構件噴出清洗液,而一邊形成於上述搬送方向上連續 之清洗液流,—邊對搬送基板供給。 根據該構成,可於沿著搬送方向連續之狀態下,良好地 對基板供給清洗液。 該情形時,亦可為包括如下處理液供給機構之構成:對 上述搬达基板將與上述清洗液不同之處理液供給至搬送基 139254.doc 201005854 板,藉此於上述清洗液之清洗處理之前,對基板實施該清 洗處理以外的特定處理;該情形時亦可構成如下:上述處 理液供給機構包括沿著上述傾斜構件配置於其上方之噴嘴 構件,藉由自該噴嘴構件對上述傾斜構件噴出清洗液,而 邊形成於上述搬送方向上連續之處理液流,一邊對搬送 基板供給。 Λ 根據該構成,可共用傾斜構件將處理液以及清洗液依序 供給至基板,因此可以合理之構成實施處理液之特定處理 及其後之清洗處理。 另一方面,關於本發明之基板處理方法包括如下步驟: 液層形成步驟,其係以表面傾斜之姿勢支撐具有撥水性之 基板,且一邊沿上述表面於水平方向上搬送,—邊沿該基 板之上位側端部供給清洗液並使其流下,藉此於基板之表 面上,自搬送方向前端部依序遍及與該搬送方向正交之方 向全體形成清洗液的液層;及液層去除步驟,其係自形成 ❹有上述液層t基板之則端側依序對上述液層嘴射氣體,藉 此將該液層去除。 根據該方法,於藉由—邊搬送基板—邊使清洗液沿其表 面流下而形成有清洗液之液層的狀態下,對該基板實施清 洗處理’然後,藉由直接將該液層去除而使其乾燥,故而 可有效防止一旦形成有液層而實施了清洗處理之部分於嗔 射氣體之乾燥處理前露出於環境氣體中。 於該方法中,較好的是,包括如下步驟:於上述液層去 除步驟中之喷射氣體之前,於上述基板之搬送方向前端且 139254.doc 201005854 其上位側端部’形成基板表面自上述液層露出之部分;於 上述液層去除步驟中,自基板表面之上述露出部分側起依 序噴射氣體。 根據該方法,可不伴隨隨著喷射氣體之液層飛濺或起泡 (發泡)等,而平順且快速地將液層去除。 [發明之效果] 根據本發明,即便一邊搬送具有撥水性之基板,一邊依 序對基板實施清洗、㈣之各處理,亦可防止在產生有未 實施清洗處理之部分之狀態下對基板實施乾燥處理之情 況,或一旦形成有清洗液之液層而實施了清洗處理之部分 於乾燥處理剛露出於環境氣體巾,起因於清洗液再次附著 於該露出部分上而形成水痕之情況產生於未^。因此,可 「邊搬送具有撥水性之基板…邊對該基板良好地實施清 洗、乾燥之各處理。 【實施方式】 使用圖式對本發明之較佳實施形態進行說明。 圖1係表示適用本發明之基板處理裝置之一示例。該基 板處理裝置1(以下簡稱作裝置⑽實施用以對表面上形成 有非晶碎層之玻璃基板3(以下簡稱作基板s)進行雷射退火 的前處理者’具趙而言係依序對基板s實施將形成於石夕層 表面上之氧化膜钱刻掉(輕钱刻)、清洗以及乾燥之各處 裝 1C、 置1構成為直列地包括承載 乾燥室1D以及卸載器1E, 器1A、蝕刻室丨B、清洗室 一邊藉由搬送輥2之驅動而 139254.doc 201005854 將由未圖示之搬送機械手搬入至承載器丨A之矩形基板s搬 送至遍及各處理室1B〜1D(於圖!中右方向),一邊對該基板 s依序實施蝕刻、清洗以及乾燥之各處理,之後,將基板8 搬送至卸載器1E中。搬送至卸載器⑺之基板s將藉由未圖 示之搬送機械手而移載至雷射退火裝置中。再者,以下之 說明中,將基板S之搬送方向簡單地稱作「搬送方向」,又 於言及「上游」、「下游」以及「前端」、「後端」時係基於 基板S之搬送方向。 β 各搬送輥2構成為沿著與搬送方向正交之方向傾斜設置 (參照圖2),藉此於以基板8之表面自裝置後側朝前側向前 下方傾斜之方式支揮基板8的狀態了,沿著基板8之表面於 水平方向上搬送基板再者,同圖中,符號3係區隔各室 1A〜1E之隔壁上所形成之基板搬送用的開口部,該開口部 3為細長之長方形形狀且為使基板8通過所必需且充分之大 小 〇 碜㈣至1B中設有用以對基板s供給㈣液之㈣液供給 機構10。該钮刻液供給機構10配置於搬送輥2之上位側之 端部上方。 如圖1以及圖2所示,韻刻液供給機構10具有•長條狀傾 斜構件^其具有於基板s之搬送方向上延伸,且沿著與 〇方向正乂之方向自裝置後側朝前側向前下方傾斜之傾斜 面m,·長條狀嘴嘴構㈣、12,其等分別配置於該傾斜 構件13之上方’且沿著該傾斜構件^延伸。喷嘴構件η、 12包含沿著長度方向以特定間隔朝下設有複數財液孔之 139254.doc 201005854 例如喷射喷嘴’其等以沿著上述傾斜面Ua排列於前後之 狀態彼此平行配置。而且,該等噴嘴構件u、12中上位側 (後侧)之喷嘴構件u,通過包括開閉閥l6a之配管16與臭氧 (〇3)水之供給源連接,另一方面’下位侧(前側)之喷嘴構 件12通過包括開閉閥丨7a之配管丨7與氫氟酸_ 也 acid) ’以下簡稱作氟酸)之供給源連接。 亦即,蝕刻液供給機構10構成為自喷嘴構件n(或12)對 傾斜面Ua噴出臭氧水(或氟酸)並使該臭氧水(或氣酸)沿著 該傾斜面13a落下,藉此一邊形成於搬送方向上連績之臭❹ 氧水(或氟酸)流一邊將該臭氧水(或氟酸)供給至基板s之上 位侧端部,進而構成為可根據上述開閉閥16a、i7a之操作 來切換對基板S供給之蝕刻液的種類(臭氧水氟酸p於 此六氧水係如下文所述為謀求促進基板S之氧化者,準 破地說並不能稱作㈣液’但於触刻室18中所使用之處理 液之意義上來說,方便起見將其作為蝕刻液來進行說明。 蝕刻液供給機構10以可於基板8停止之狀態下遍及該基 板S之上位側端部全體供給蝕刻液之方式,將搬送方向之❹ 尺寸設定得充分長於基板8之該寸法。再者,亦可預先使 喷嘴構件11及/或喷嘴構件12進而通過包括開閉間之配管 與清洗水(純水)之供給源連接,於蝕刻處理後將清洗水供 給至基板s,藉此於清洗室lc内進行清洗處理之前,於蝕 刻室1B内開始進行清洗處理。 清洗室1C中配置有用以對基板s供給清洗水(純水)之清 洗水供給機構(相當於本發明所涉及之清洗液供給機構)。 139254.doc •12· 201005854 第3之3種供 如圖1至圖5所不’該清洗水供給機構包括第1 給機構20、24、26。 二:=配置於搬送輥2之上位側端部上方。該第 供、,,。機構20具有:長條狀傾斜構件22, ::: =伸’且沿著舆該搬送方向正交之方:自= 後側朝别側向前下方傾斜之傾斜面22a;長條狀 2卜其配置於該傾斜構件22之上方且沿著 伸。喷嘴構㈣包括沿著長度方向以特定間隔朝下 孔之例如噴射噴嘴,其通過包括開閉閥^之配 管^洗水之供給源連接。亦即,第1供給機構⑽有 與上述_液供給機構1_同之構成,其構成為自噴嘴構 ㈣對傾斜構件22噴出清洗水,且使清洗水沿著傾斜面 22a落下,藉此_邊形成於搬送方向上 邊將該清洗水供給至基板S之上㈣端部。^水流一Further, the j-stage is provided on the upstream side, and the range of the cleaning liquid supplied by the first supply mechanism Θ ' is supplied to the surface of the transfer substrate in a cluster-like manner. According to this configuration, the liquid amount of the cleaning liquid flowing down the substrate can be sufficiently ensured: the liquid layer of the cleaning liquid can be formed more reliably and satisfactorily on the surface of the substrate. In the case of the clearing, it is generally considered that when the cleaning liquid is supplied from the third supply mechanism in a cluster form, the spray of the cleaning liquid adheres to the substrate after the drying process, and the like is formed. Therefore, when the third supply mechanism is provided, it is preferable that a shielding member is provided between the second supply mechanism and the drying mechanism to prevent the cleaning liquid from flying toward the downstream side of the second supply mechanism. In the above apparatus, the second supply means may be provided in a direction orthogonal to the direction in which the upper (10) is fed, but in the case where the gas is ejected by the drying means, it is preferable that the lower side of the substrate is The supply position of the cleaning liquid is located on the downstream side of the supply position on the upper side, and is inclined in a direction orthogonal to the conveyance direction. According to the configuration, "the front end of the substrate passes through the position of the second supply means is not long", and the exposed portion of the substrate surface 139254.doc 201005854 is easily generated at the upper end portion (i.e., the corner portion) of the front end. Therefore, when the self-drying mechanism ejects the gas to the substrate passing through the position of the second supply mechanism, the exposed portion is used as a base point, and the liquid layer of the cleaning liquid is maintained in a good layer state while being along the corner portion of the substrate. The basin surface is removed smoothly and quickly. Therefore, it is possible to prevent a phenomenon in which liquid layer flying or foaming (foaming) may occur due to ejection of gas when the liquid layer of the cleaning liquid is removed, which may cause water mark formation. Further, the drying mechanism may be disposed so as to be inclined with respect to the direction orthogonal to the conveyance direction so that the gas injection position on the lower side of the substrate is located further downstream than the gas injection position on the upper side. According to this configuration, the liquid layer can be removed along the surface from the end portion (corner portion) on the upper side of the substrate, and the same as described above can be used to prevent splashing or foaming of the liquid layer. When the above-described configuration of the first supply mechanism is obliquely disposed in the direction in which the conveyance directions are orthogonal to each other, it is very effective in smoothly removing the liquid layer of the cleaning liquid. Further, in the above apparatus, the above-mentioned first supply mechanism includes a slanting member disposed along the conveying direction and inclined in a direction orthogonal to the conveying direction; and a nozzle member disposed above the slanting member along the conveying direction; When the cleaning liquid is ejected from the member, the cleaning liquid is continuously supplied in the transport direction, and the substrate is supplied to the transport substrate. With this configuration, the substrate can be satisfactorily supplied in a continuous state along the transport direction. In this case, the processing liquid supply means may be configured to supply the processing liquid different from the cleaning liquid to the transport substrate to the transport substrate. 139254.doc 201005854 a plate, wherein the substrate is subjected to a specific treatment other than the cleaning treatment before the cleaning treatment of the cleaning liquid; in this case, the processing liquid supply mechanism may be disposed along the inclined member along the inclined member. In the upper nozzle member, the cleaning liquid is ejected from the nozzle member from the nozzle member, and the processing liquid is continuously supplied to the transport substrate while being formed in the transport direction. Λ According to this configuration, the tilt member can be shared and processed. The liquid and the cleaning liquid are sequentially supplied to the substrate, so that the specific treatment of the treatment liquid and the subsequent cleaning treatment can be appropriately configured. On the other hand, the substrate processing method of the present invention includes the following steps: a liquid layer formation step, Supporting the substrate having water repellency in a posture in which the surface is inclined, and transporting the substrate along the surface in the horizontal direction, and supplying the cleaning liquid to the upper end portion of the substrate and flowing it down, thereby self-transporting on the surface of the substrate The directional front end portion sequentially forms a cleaning liquid over the entire direction orthogonal to the conveying direction a liquid layer; and a liquid layer removing step, wherein the liquid layer is sequentially sprayed on the liquid layer from the end side on which the liquid layer t substrate is formed, thereby removing the liquid layer. According to the method, While the substrate is being conveyed, the cleaning liquid is applied to the surface of the cleaning liquid to form a liquid layer of the cleaning liquid, and the substrate is subjected to a cleaning treatment. Then, the liquid layer is directly removed and dried, thereby effectively preventing the substrate from being dried. The portion subjected to the cleaning treatment once the liquid layer is formed is exposed to the ambient gas before the drying treatment of the blast gas. In the method, preferably, the method includes the following steps: spraying the gas in the liquid layer removing step Previously, at the front end of the transfer direction of the substrate and 139254.doc 201005854, the upper end portion 'forms a portion of the substrate surface exposed from the liquid layer; in the liquid layer removing step, from the exposed portion side of the substrate surface Spray gas. According to this method, the liquid layer can be smoothly and quickly removed without accompanying splashing or foaming (foaming) of the liquid layer of the jetting gas. [Effects of the Invention] According to the present invention, even when the substrate having the water repellency is conveyed, the substrate is sequentially cleaned and the respective processes (4) are performed, thereby preventing the substrate from being dried in a state where the cleaning process is not performed. In the case of the treatment, the portion subjected to the cleaning treatment once the liquid layer of the cleaning liquid is formed is exposed to the ambient gas towel immediately after the drying treatment, and the water cleaning is caused by the cleaning liquid adhering to the exposed portion again. ^. Therefore, it is possible to perform various processes of cleaning and drying the substrate while carrying the water-repellent substrate. [Embodiment] A preferred embodiment of the present invention will be described with reference to the drawings. Fig. 1 shows the application of the present invention. An example of a substrate processing apparatus. The substrate processing apparatus 1 (hereinafter referred to as the apparatus (10) is a pre-processor for performing laser annealing on a glass substrate 3 (hereinafter simply referred to as a substrate s) on which an amorphous fracture layer is formed. In the case of Zhao, the substrate s is sequentially applied to the oxide film formed on the surface of the layer, and the cleaning and drying are carried out. 1C is placed in a row to include the drying chamber 1D. And the unloader 1E, the apparatus 1A, the etching chamber 丨B, and the cleaning chamber are driven by the transport roller 2, 139254.doc 201005854, and the rectangular substrate s carried by the transport robot (not shown) to the carrier 丨A is transported to each In the processing chambers 1B to 1D (in the right direction in the drawing!), the respective processes of etching, cleaning, and drying are sequentially performed on the substrate s, and then the substrate 8 is transferred to the unloader 1E. (7) The substrate s is transferred to the laser annealing apparatus by a transport robot (not shown). In the following description, the transport direction of the substrate S is simply referred to as "transport direction". "Upstream", "downstream", "front end", and "back end" are based on the transport direction of the substrate S. β Each transport roller 2 is configured to be inclined along a direction orthogonal to the transport direction (see Fig. 2). Therefore, the substrate 8 is slanted from the rear side of the device toward the front side toward the front side, and the substrate is transported in the horizontal direction along the surface of the substrate 8. Further, in the same figure, the symbol 3 is used. The opening for substrate transfer formed on the partition wall of each of the chambers 1A to 1E, the opening portion 3 having an elongated rectangular shape and being provided in a sufficient size (4) to 1B for passing the substrate 8 for The substrate s is supplied to the (four) liquid supply mechanism 10. The button engraving supply mechanism 10 is disposed above the end portion of the upper side of the conveyance roller 2. As shown in Figs. 1 and 2, the rhyme supply mechanism 10 has a length. Strip-shaped inclined member ^ which has a movement on the substrate s An inclined surface m that extends in the feeding direction and that is inclined forward and downward from the rear side of the apparatus toward the front side in a direction perpendicular to the 〇 direction, and an elongated nozzle structure (four), 12, which are respectively disposed on the inclined member 13 Above and along the inclined member ^. The nozzle members η, 12 include 139254.doc 201005854, such as a spray nozzle, which is provided with a plurality of liquid holes downward at a specific interval along the length direction, for example, along the inclined surface The Ua is arranged in parallel with each other in the front and rear state. Further, the nozzle member u of the upper side (rear side) of the nozzle members u and 12 is connected to the supply source of ozone (〇3) water through the pipe 16 including the opening and closing valve 16a. On the other hand, the nozzle member 12 of the lower side (front side) is connected to the supply source of the hydrofluoric acid (hereinafter referred to as hydrofluoric acid) by the piping 7 including the opening and closing valve 7a. In other words, the etching liquid supply mechanism 10 is configured to eject ozone water (or hydrofluoric acid) from the nozzle member n (or 12) to the inclined surface Ua, and to drop the ozone water (or gas acid) along the inclined surface 13a. The ozone water (or hydrofluoric acid) is supplied to the upper end portion of the substrate s while the odor water (or hydrofluoric acid) flowing in the transport direction is formed, and the opening and closing valves 16a and i7a are further configured. The operation is to switch the type of the etching liquid supplied to the substrate S. (Ozone water fluoric acid p is hereinafter referred to as "four liquid" as described below in order to promote the oxidation of the substrate S as described below. In the sense of the treatment liquid used in the etch chamber 18, it will be described as an etchant for convenience. The etchant supply mechanism 10 is disposed over the upper side of the substrate S in a state where the substrate 8 is stopped. In the method of supplying the etching liquid, the size of the crucible in the transport direction is set to be sufficiently longer than the size of the substrate 8. Further, the nozzle member 11 and/or the nozzle member 12 may be further passed through the piping and the cleaning water including the opening and closing portions. Supply source of (pure water) After the etching process, the cleaning water is supplied to the substrate s, and the cleaning process is started in the etching chamber 1B before the cleaning process in the cleaning chamber 1c. The cleaning chamber 1C is disposed to supply the cleaning water to the substrate s ( Purified water supply mechanism of pure water) (corresponding to the cleaning liquid supply mechanism according to the present invention) 139254.doc •12· 201005854 The third type 3 is provided for the cleaning water supply mechanism as shown in Figs. 1 to 5 The first feeding means 20, 24, and 26. The second: = is disposed above the upper end portion of the conveying roller 2. The mechanism 20 has a long inclined member 22, ::: = An inclined surface 22a that is orthogonal to the transport direction from the rear side to the other side; the elongated shape is disposed above the inclined member 22 and extends along the nozzle. The nozzle structure (4) includes For example, an injection nozzle that faces the lower hole at a specific interval along the longitudinal direction is connected by a supply source including a pipe for opening and closing the valve. That is, the first supply mechanism (10) has the same as the above-described liquid supply mechanism 1_ The structure is configured to eject the inclined member 22 from the nozzle structure (4) Water, and the washing water dropping along the inclined surface 22a, formed on the side _ whereby the conveyance direction of the washing water is supplied to the side end portion on the substrate (iv) S. ^ A flow

再者,第1供給機構20之下游侧端部設置至區隔清洗室 1C與乾燥室1D之隔壁附近之位置為止。 第2供給機構24係包括包含狹縫狀喷液孔之所謂狹縫喷 嘴,如圖3至圖5所示配置於第丨供給機構2〇之下游側。 第2供給機構24於從搬送基板s之上位側橫越至其下位側 之方向(相§於本發明之第丨基板橫越方向)上,且以與搬送 基板S之間可形成有固定間隙之方式,以沿著裝置之前後 方向傾斜之姿勢設置,並且通過包括開閉閥28a之配管Μ 與π洗水之上述供給源連接。藉此第2供給機構對通過其 下方之基板S以沿著裝置前後方向連續之狀態供給清洗水。 139254.doc -13· 201005854 若加以更詳細地說明,則第2供給機構24係以沿著與基 板表面正父之方向對基板表面t出清洗水之方式設定其姿 勢而且進而,如圖3以及圖5所示,設為上位側(後側)端 部靠近第1供給機構20之下游側端部之配置,而且以相對 於基板S之下位側之清洗水的供給位置位於相較於上位側 的供給位置更下游侧的方式,設為相對於與搬送方向正交 之方向僅傾斜特以度91。該角㈣於該實施形態係於 5°〜10°之範圍内設定。 第3供給機構26係包括沿著搬送方向延伸、且沿著長度_ 方向以特定間隔朝下設置有複數個噴液孔之喷射噴嘴,如 圖5所示,於基板8之搬送路徑上方,沿著搬送輥2之傾斜 以固定間隔配置有複數根。 該等第3供給機構26以於搬送方向上位於相較於第丨供給 機構20之兩端更内侧之方式設置’即設置於藉由第i供給 機構20而供給清洗液之範圍内,且通過包括開閉閥之 共通配管29與清洗水之上述供給源連接。藉此第3供給機 構26遍及基板S表面之廣闊區域呈射叢狀地供給清洗水。髻 再者,清洗室1C内在第2供給機構24與其下游側之隔壁 (區隔清洗室1C與乾燥室id之隔壁)之間設有遮蔽板25。該 遮蔽板25係用以防止伴隨第3供給機構26喷出清洗水而產 生之噴霧(喷霧狀清洗水)飛濺至第2供給機構24之下游側並 附著於基板s上者,本實施形態中,該遮蔽板25以及隔壁 (區隔清洗室1C與乾燥室id之隔壁)相當於本發明所涉及之 遮蔽構件。 139254.doc •14- 201005854 乾燥室ID中設有氣刀30(相當於本發明所涉及之乾燥機 構),該氣刀30藉由對基板8噴射空氣來將清洗水去除而使 基板S乾燥。 該氣刀30係包括包含狹縫狀空氣喷出孔之狹縫喷嘴,如 圖3至圖5所示,其藉由配置於區隔清洗室1(:與乾燥室⑴ 之隔壁附近而靠近上述第2供給機構24來配置。氣刀儿於 從搬送基板S之上位侧橫越至其下位側之方向(相當於本發 明之第2基板橫越方向)上,且以與搬送基板s之間可形成 • 有固定間隙之方式沿著裝置的前後方向以傾斜姿勢設置, 通過包括開閉閥32a之配管32與空氣供給源連接,藉此氣 刀3 0對基板S沿著裝置前後方向以連續狀態供給空氣。 若加以更詳細地說明,則氣刀30係以自搬送方向下游側 朝上游側對搬送基板S中之通過開口部3之部分沿斜方向噴 射空氣之方式’以稍稍指向開口部3側之姿勢設置。進而 如圖3所示,氣刀30以相對於基板8之下位側之空氣供給位 ⑩ 置位於相較於上位側之噴射位置更下游側之方式,設置為 相對於與搬送方向正交之方向僅傾斜特定角度θ2。該角度 Θ2於本實施形態中係於5。〜30。之範圍内設定。 再者’本實施形態中為將液層去除而使用空氣,但亦可 應用氮(Ν2)等惰性氣體。 其次’對該裝置1中之基板S之處理動作及其作用加以說 明。 將基板S搬入至承載器1Α中’且藉由搬送輥2之驅動而 將該基板S搬送至蚀刻室1Β附近之特定位置後,首先開始 139254.doc 15 201005854 藉由钱刻液供給機構10而供給臭氧水。具體而言,藉由開 閉閥16a之操作而自喷嘴構件u對傾斜構件13噴出臭氧 水,藉此該臭氧水將沿著傾斜面13a落下。 因此’藉由搬送輥2之驅動而將基板S搬入至蝕刻室1B 後’自前端侧起依序對基板S之上位側端部供給臭氧水。 對基板S供給之臭氧水沿著基板8之表面落下,藉此會於基 板s之表面上形成有液層。藉此將促進基板表面之氧化。 亦即’藉由如此般促進基板S之氧化而將附著於基板S之表 面上的微粒封入至氧化膜中。 將基板S之前端搬送至蝕刻液供給機構丨〇之下游侧端附 近後,停止搬送基板S,對基板S持續供給固定時間之臭氧 水後,藉由開閉閥16a、17a之操作而將蝕刻液之種類自臭 氧水切換為氣酸。 相同地,對基板s供給之氟酸沿著基板s之表面落下,藉 此會於基板S之表面上形成液層。藉此將形成於基板s上之 氧化膜去除。 而且’當持續對基板s供給固定時間之氟酸後,驅動搬 送輥2而重新開始搬送基板s,並且藉由開閉閥27a、28a、 29a之操作而於清洗室1(:内,開始藉由第丨〜第3之各供給機 構20、24、26而供給清洗水。此時,第】供給機構2〇供給 清洗水係藉由使自噴嘴構件21喷出至傾斜構件22之清洗水 沿著傾斜面22a落下而進行。 因此,當將基板S自蝕刻室1B搬出且搬入至清洗室1(:中 時,清洗水會自該基板s之前端側起依序供給至基板s。如 139254.doc 16 201005854 此般供給至基板s之清洗水沿著基板s之表面落下,藉此會 於基板S之表面上形成有液層。藉此置換基板表面之氟酸 與清洗水來將基板s加以清洗,並且防止清洗後之基板表 面曝露(露出)於環境氣體中。 而且’當進而進行基板s之搬送時’操作開閉閥32a,以 特定時序於乾燥室1D内開始自氣刀30喷出空氣。 當以如此方式使基板S到達第2供給機構24之位置時,藉 由第2供給機構24而沿著裝置前後方向連續地供給清洗 籲 水,進而隨著基板S之搬送,自氣刀30喷出之空氣喷射至 该基板S卡之通過第2供給機構24之部分。藉此隨著基板3 自清洗室1C搬送至乾燥室1D,基板表面之清洗水之液層 將藉由空氣壓力而去除,對基板8實施乾燥處理。 而且,進而搬送基板S使其通過乾燥室1〇並被搬送至卸 載器1E中之後,藉此結束該裝置!對基板s之處理。 再者,因實施了蝕刻處理之基板s之表面具有較強之撥 ❹水性,故而清洗室1C之清洗處理中,自第丨供給機構20供 給且沿著基板S落下之清洗水流容易偏向搬送方向中央 部,直至基板S到達第2供給機構24為止,會於基板s之前 端部以及後端部之下位側形成有清洗水未落下之部分(稱 作未落下部分)(參照圖8(a))。然而,於基板8通過第2供給 機構24時亦會對該未落下部分供給清洗水,故而不會在產 生有未實施清洗處理之部分之狀態下對基板8實施乾燥處 理。 又,當基板s之前端到達第2供給機構24時,自該第2供 139254.doc 201005854 給機構24供給之清洗水、與自第1供給機構20等供給之清 洗水會於基板上合流’其結果,前端側之未落下部分消 失’如圖6(a)〜(c)所示,基板s中之包含第2供給機構24之 位置在内之上游側將由清洗水的液層廣泛地覆蓋。而且, 自罪近第2供給機構24之氣刀30對如此般由液層覆蓋之狀 態之基板S噴射空氣而將該液層去除,藉此將有效防止一 旦清洗水落下(形成有清洗水之液層)而實施了清洗處理之 部分於乾燥處理前露出於環境氣趑中的情況(參照圖 8(b)),因此將預防清洗水再次附著於該露出部分而導致形❹ 成水痕。 又如上所述第2供給機構24以及氣刀30係以相對於與 搬送方向正交之方向僅傾斜特定角度01、们之狀態設置, 故而可平順且良好地藉由喷射空氣而將液層去除。即,藉 由如上述般候斜設置第2供給機構24,而於相較於第2供給 機構24更下游側,喷出至基板s之清洗水不會於搬送方向 上擴展而是沿著基板S落下,其結果,如圖6(b)以及圖7所 示,會於通過第2供給機構24之基板前端之上位側端部(亦_ 即角部)產生有基板S自液層露出的部分。因此,若自相同 地以傾斜狀態設置之氣刀30對基板8噴出空氣,則如叫) 所示’會以該露出部分為基點’清洗液之液層一邊良好地 保持層狀態-邊自基板之前端角部沿著基板表面平順且快 速地被去除’從而將在不會因嘴射空氣而導致㈣或起泡 (發泡)等之狀態下良好地去除清洗水之液層。 如上所述該裝置1中,即便-邊搬送飯刻處理後之具有 139254.doc 18 201005854 撥水性之基板s—邊依序對基板s實施清洗、乾燥之各處 理,亦可預防產生如下情況,即在產生有未實施清洗處理 之部分之狀態下對基板S實施乾燥處理之情況,及一旦形 成有清洗水之液層而實施了清洗處理之部分於乾燥處理前 露出於環境氣體中,清洗水再次附著於該露出部分而導致 形成水痕之情況。因此,可如上述般一邊搬送表面上形成 有非晶矽層之基板S,一邊對該基板S良好地實施蝕刻處 理、清洗處理以及乾燥處理。 尤其係因構成為藉由僅傾斜特定角度01、02來設置第2 供給機構24及乾燥室11}之氣刀3〇,而可在乾燥處理時不會 因噴射空氣導致清洗水飛濺或起泡(發泡)等之狀態下平順 且良好地將清洗水之液層去除,故而亦可有效地防止隨著 乾燥處理而形成水痕。亦即,水痕之產生要因在於基板表 面(矽)上氧以及清洗水長期共存,因此若清洗水飛濺而再 次附著於實施了乾燥處理之部分上,或者因喷射空氣導致 清洗水起泡而使得清洗水中吸入大量之環境氣體(氧),則 谷易形成水痕,但根據上述裝置丨,於乾燥處理中難以產 生所述狀況,因此亦具有能有效防止隨著乾燥處理而形成 水痕之優點。 再者,作為於基板表面上形成清洗液之液層來實施清洗 處理之方法亦存在如下之所謂水坑處理,即例如以水平姿 勢支樓基板’於其整個表面上利用表面張力形成清洗液之 液層(覆液)來進行處理,但於該水坑處理之情形時,基板 表面上所形成之液層之厚度較厚(液量較多),因此,若於 139254.doc -19· 201005854 乾燥處理時噴射空氣則容易於液層中產生起泡(發泡)。於 該方面’若如上述裝置1(清洗室1C)般採用一邊使清洗液 沿著傾斜姿勢之基板s落下一邊形成液層之方法,則液層 之厚度會較薄,於噴射空氣時難以於液層中起泡(發泡)。 因此’存在於該方面亦可有效防止隨著乾燥處理而形成水 痕之優點。 以上所說明之裝置1係適用本發明之基板處理裝置之一 實施形態,其具體構成可於不脫離本發明之要旨之範圍内 加以適當變更。 0 例如,上述裝置i之清洗室1C中以如下方式構成第丨供給 機構20 ’即’使自喷嘴構件2丄噴出之清洗水沿著傾斜構件 22洛下,藉此以於搬送方向上連續之狀態將清洗水供給至 基板s,當然,作為第〗供給機構2〇,亦可藉由應用具有於 搬送方向上延伸之狹縫狀喷液口之所謂狹縫喷嘴,而自該 狹縫喷嘴直接將清洗水供給至基板s。總而言之只要為/ 匕夠乂於搬送方向上連續之狀態將清洗水供給至基板S之 上位側端部的構成,作為第1供給機構20則可採用各種構〇 成再者,當如上述般設第1供給機構20為狹缝噴嘴時, 亦可叹為使第1供給機構2〇與第2供給機構Μ成一體之 型槿Λ、 τ 生 裝置1之清洗請巾,將對基板以射叢狀供給清 ’水之第3供給機構26設於清洗請内但於例如僅以來 s自實第施1Γ機構2G以及第2供給機構24之清洗水便可對基板 b實施充分之清洗虑理拉 + '亦可設為省去第3供給機構26之 I39254.doc -20· 201005854 構成。 又’於可藉由第3供給機構26而於基板S上形成液層之情 形時’亦可設為第!供給機構2〇僅配置於清洗室1C内之下 游侧之一部分(角部)。 又’第2供給機構24之傾斜角度Θ1及氣刀30之傾斜角度 θ2亦不限定於實施形態之數值,只要以能更好地形成以及 去除液層之方式根據基板S之尺寸等諸條件來加以設定即 可。又,第2供給機構24之傾斜角度Θ1與氣刀30之傾斜角 ® 度θ2可相同亦可不同。 又’該裝置1中,分開獨立設置姓刻室1Β與清洗室1C, 但亦可設為如下構成,即,將用以供給例如臭氧水以及氧 酸之噴嘴構件11、12設置於清洗室1(:内,具體而言係於構 成第1供給機構2〇之喷嘴構件21之下方側並排配置上述喷 嘴構件11、12,藉由開閉閥16a等之操作而切換自各喷嘴 構件11、12、21喷出之液種。根據該構成,可使蝕刻室1B ^ 與清洗室1C共通化,故而可使裝置整體精簡化。再者,該 情开> 時’就臭氧水以及清洗水(純水)而言’亦可構成為使 噴嘴構件共通化,而且根據開閉閥之操作來切換將喷出之 液種。 又’為亦可對更大型之基板S良好地於基板表面上形成 /月洗水之液層,亦可於上述清洗室1C中設第1供給機構20 為上下二段(或複數段)。 再者,上述實施形態中’作為本發明之適用例而說明了 對Μ刻(輕餘刻)處理後之基板S進行清洗以及乾燥處理之 139254.doc •21 - 201005854 情形,但本發明亦可適用於如下之裝置,該裝置係因使例 如非晶矽層成膜後不久之基板表面具有較強之撥水性而對 該成膜後不久之基板實施清洗以及乾燥處理者。 【圖式簡單說明】 圖1係表示適用本發明之基板處理裝置之概略剖面圖; 圖2係表示蝕刻室内之構成之圖線剖面圖; 圖3係表示清洗室内之構成之剖面概略圖; 圖4係表示清洗室内之構成之剖面概略圖(圖線剖 面圖); 圖5係表示清洗室内之構成之剖面概略圖(圖κν·ν β 面圖); ° 圖6係表示清洗室以及乾燥室中對基板進行清洗、乾燥 處理之狀況之平面模式圖,(⑷表示基板前端到達第2供給 機構之狀態’(b)表示基板前端通過^给機構Μ後不久 之狀態’⑷表示基板後端到達第2供給機構附近之 圖7係圖6(b)所示之基板前端部分之要部 〜以卢 線圍繞之部分)放大圖;及 虛 圖叫⑻係說明—邊在㈣斜㈣搬送基板 清洗水供給至基板並使之落一 、 燥處料之__。 邊縣“行清洗、乾 【主要元件符號說明】Further, the downstream end portion of the first supply mechanism 20 is provided to a position adjacent to the vicinity of the partition wall of the cleaning chamber 1C and the drying chamber 1D. The second supply mechanism 24 includes a so-called slit nozzle including a slit-like liquid discharge hole, and is disposed on the downstream side of the second supply mechanism 2A as shown in Figs. 3 to 5 . The second supply mechanism 24 is formed in a direction from the upper side of the transport substrate s to the lower side thereof (corresponding to the traverse direction of the second substrate of the present invention), and a fixed gap can be formed between the second substrate and the transfer substrate S. The manner is set in a posture inclined in the front-rear direction of the apparatus, and is connected to the above-mentioned supply source of π-washing water through a pipe Μ including the opening and closing valve 28a. By this, the second supply means supplies the washing water to the substrate S passing therebelow in a state in which it is continuous in the front-rear direction of the apparatus. 139254.doc -13· 201005854 As will be described in more detail, the second supply mechanism 24 sets the posture of the substrate surface t in the direction of the father of the substrate surface, and further, as shown in FIG. 3 and As shown in Fig. 5, the upper end (rear side) end portion is disposed close to the downstream side end portion of the first supply mechanism 20, and the supply position of the washing water with respect to the lower side of the substrate S is located on the upper side. The manner in which the supply position is further downstream is set to be only inclined by a degree 91 with respect to the direction orthogonal to the conveyance direction. This angle (4) is set in the range of 5° to 10° in this embodiment. The third supply mechanism 26 includes injection nozzles that extend in the transport direction and are provided with a plurality of liquid discharge holes at a predetermined interval along the length_direction, as shown in FIG. 5, above the transport path of the substrate 8, along the path The inclination of the conveying roller 2 is arranged at a fixed interval with a plurality of roots. The third supply mechanism 26 is disposed so as to be disposed inside the both ends of the second supply mechanism 20 in the transport direction, that is, in the range in which the cleaning liquid is supplied by the i-th supply mechanism 20, and passes through The common pipe 29 including the opening and closing valve is connected to the above-described supply source of the washing water. Thereby, the third supply mechanism 26 supplies the washing water in a cluster shape over a wide area on the surface of the substrate S. Further, in the cleaning chamber 1C, a shielding plate 25 is provided between the second supply mechanism 24 and the partition wall on the downstream side thereof (the partition cleaning chamber 1C and the partition wall id are partitioned). The shielding plate 25 is configured to prevent the spray (spray-like washing water) generated by the third supply mechanism 26 from being sprayed with the washing water from splashing on the downstream side of the second supply mechanism 24 and adhering to the substrate s. In the middle, the shielding plate 25 and the partition wall (the partition wall 1C and the partition wall id are partition walls) correspond to the shielding member according to the present invention. 139254.doc • 14- 201005854 The air-drying chamber ID is provided with an air knife 30 (corresponding to the drying mechanism according to the present invention), and the air knife 30 removes the washing water by spraying air onto the substrate 8, thereby drying the substrate S. The air knife 30 includes a slit nozzle including a slit-shaped air ejection hole, as shown in FIGS. 3 to 5, which is disposed near the partition wall of the cleaning chamber 1 (: and the drying chamber (1) The second supply mechanism 24 is disposed in the direction from the upper side of the transport substrate S to the lower side thereof (corresponding to the second substrate traverse direction of the present invention), and between the transfer substrate s It can be formed in a manner of having a fixed gap in an inclined posture along the front-rear direction of the apparatus, and is connected to the air supply source through a pipe 32 including the opening and closing valve 32a, whereby the air knife 30 is continuous with the substrate S in the front-rear direction of the apparatus. In the air supply, the air knife 30 is slightly pointed toward the opening 3 so that the portion of the transport substrate S passing through the opening 3 is ejected in the oblique direction from the downstream side in the transport direction. Further, as shown in FIG. 3, the air knife 30 is disposed to be transported relative to the air supply position 10 on the lower side of the substrate 8 so as to be located on the downstream side of the injection position on the upper side. Direction orthogonal The direction is only inclined by a specific angle θ2. This angle Θ2 is set within the range of 5 to 30 in the present embodiment. In addition, in the present embodiment, air is used to remove the liquid layer, but nitrogen may be applied. Next, the inert gas is used. Next, the processing operation of the substrate S in the apparatus 1 and its action will be described. The substrate S is carried into the carrier 1' and the substrate S is transported to the etching by the driving of the transport roller 2. After a specific position in the vicinity of the chamber 1 first, 139254.doc 15 201005854 is first supplied to the ozone water by the money engraving supply mechanism 10. Specifically, the ozone is ejected from the inclined member 13 from the nozzle member u by the operation of the opening and closing valve 16a. Water, whereby the ozone water will fall along the inclined surface 13a. Therefore, 'the substrate S is carried into the etching chamber 1B by the driving of the conveying roller 2, and the upper side end portion of the substrate S is sequentially supplied from the front end side. Ozone water. The ozone water supplied to the substrate S falls along the surface of the substrate 8, whereby a liquid layer is formed on the surface of the substrate s. Thereby, the oxidation of the surface of the substrate is promoted. That is, the substrate is promoted in this way. S oxidation The fine particles adhering to the surface of the substrate S are sealed in the oxide film. After the front end of the substrate S is transferred to the vicinity of the downstream end of the etching liquid supply mechanism ,, the substrate S is stopped, and the substrate S is continuously supplied with ozone for a fixed period of time. After the water, the type of the etching liquid is switched from the ozone water to the gas acid by the operation of the opening and closing valves 16a and 17a. Similarly, the hydrofluoric acid supplied to the substrate s falls along the surface of the substrate s, thereby being on the substrate S. A liquid layer is formed on the surface of the substrate. The oxide film formed on the substrate s is removed. Further, when the fluoric acid is supplied to the substrate s for a fixed period of time, the transfer roller 2 is driven to restart the transfer of the substrate s, and the substrate s is opened and closed. The valves 27a, 28a, and 29a are operated to supply the washing water to the respective supply mechanisms 20, 24, and 26 in the cleaning chamber 1 (in the cleaning chamber 1). At this time, the supply mechanism 2 is supplied with the washing water by dropping the washing water sprayed from the nozzle member 21 to the inclined member 22 along the inclined surface 22a. Therefore, when the substrate S is carried out from the etching chamber 1B and carried into the cleaning chamber 1 (:, the cleaning water is sequentially supplied to the substrate s from the front end side of the substrate s. As supplied from 139254.doc 16 201005854 The cleaning water of the substrate s falls along the surface of the substrate s, whereby a liquid layer is formed on the surface of the substrate S. The sulphuric acid and the cleaning water on the surface of the substrate are replaced to clean the substrate s, and the cleaning is prevented. The surface of the substrate is exposed (exposed) to the ambient gas. Further, when the substrate s is further conveyed, the opening and closing valve 32a is operated, and air is ejected from the air knife 30 in the drying chamber 1D at a specific timing. When the S reaches the position of the second supply mechanism 24, the second supply mechanism 24 continuously supplies the washing water in the longitudinal direction of the apparatus, and the air ejected from the air knife 30 is ejected to the substrate S as it is transported. The substrate S is passed through the portion of the second supply mechanism 24. Thereby, as the substrate 3 is transported from the cleaning chamber 1C to the drying chamber 1D, the liquid layer of the washing water on the surface of the substrate is removed by air pressure, and the substrate 8 is dried. Processing. Further, after the substrate S is transferred to the drying chamber 1 and transported to the unloader 1E, the device is finished and the substrate s is processed. Further, the surface of the substrate s subjected to the etching treatment is strong. In the cleaning process of the cleaning chamber 1C, the cleaning water flow supplied from the second supply mechanism 20 and falling along the substrate S is likely to be biased toward the center of the conveyance direction until the substrate S reaches the second supply mechanism 24. A portion where the washing water does not fall (referred to as an undropped portion) is formed on the lower end portion of the front end portion and the rear end portion of the substrate s (refer to FIG. 8(a)). However, when the substrate 8 passes through the second supply mechanism 24, Since the washing water is supplied to the undropped portion, the substrate 8 is not dried in a state where the cleaning process is not performed. When the front end of the substrate s reaches the second supply mechanism 24, the second 139254.doc 201005854 The washing water supplied to the mechanism 24 and the washing water supplied from the first supply mechanism 20 and the like are merged on the substrate. As a result, the unfalling portion of the front end side disappears as shown in Fig. 6(a)~( c) shown The upstream side of the substrate s including the position of the second supply mechanism 24 is widely covered with the liquid layer of the washing water. Moreover, the air knife 30 of the second supply mechanism 24 is covered by the liquid layer. The substrate S is sprayed with air to remove the liquid layer, thereby effectively preventing the portion where the cleaning process is performed once the cleaning water is dropped (the liquid layer in which the washing water is formed) is exposed to the ambient gas before the drying process ( Referring to Fig. 8(b)), the preventive washing water is again adhered to the exposed portion to cause a water mark. Further, as described above, the second supply mechanism 24 and the air knife 30 are orthogonal to the transport direction. The direction is only tilted by the specific angle 01, and the state is set, so that the liquid layer can be removed smoothly by spraying air. In other words, by providing the second supply mechanism 24 as described above, the cleaning water discharged to the substrate s does not expand in the transport direction but along the substrate on the downstream side of the second supply mechanism 24. As a result of the fall of S, as shown in FIG. 6(b) and FIG. 7, the substrate S is exposed from the liquid layer at the upper end portion (also, the corner portion) of the substrate leading end of the second supply mechanism 24. section. Therefore, if the air knife 30 provided in the inclined state is ejected from the substrate 8 as shown in the figure, the liquid layer of the cleaning liquid will be maintained as the base portion of the cleaning portion as shown in the figure. The front corner portion is smoothly and quickly removed along the surface of the substrate, so that the liquid layer of the washing water is well removed in a state where the air is not caused by the nozzle (4) or foaming (foaming). As described above, in the apparatus 1, even if the substrates s are washed and dried in the order of 139254.doc 18 201005854 water-repellent substrate s after the meal processing, the following cases can be prevented. That is, the substrate S is subjected to a drying treatment in a state in which the cleaning treatment is not performed, and the portion in which the cleaning treatment is performed once the liquid layer of the cleaning water is formed is exposed to the ambient gas before the drying treatment, and the washing water is washed. Attached to the exposed portion again causes a water mark to form. Therefore, the substrate S on which the amorphous germanium layer is formed on the surface can be transferred as described above, and the substrate S can be satisfactorily subjected to etching treatment, cleaning treatment, and drying treatment. In particular, since the air knife 3〇 of the second supply mechanism 24 and the drying chamber 11} is provided by tilting only the specific angles 01 and 02, it is possible to prevent the washing water from splashing or foaming due to the jet of air during the drying process. In the state of (foaming) or the like, the liquid layer of the washing water is smoothly and satisfactorily removed, so that it is possible to effectively prevent the formation of water marks with the drying treatment. That is, the water mark is caused by the long-term coexistence of oxygen and the washing water on the surface of the substrate, so that if the washing water splashes and adheres again to the part subjected to the drying treatment, or the washing water is foamed by the jet of air, When a large amount of ambient gas (oxygen) is inhaled in the washing water, the water is likely to form water marks. However, according to the above device, it is difficult to produce the above conditions in the drying process, and therefore it has the advantage of effectively preventing the formation of water marks with the drying process. . Further, as a method of performing a cleaning treatment by forming a liquid layer of a cleaning liquid on the surface of the substrate, there is also a so-called puddle treatment in which a cleaning liquid is formed on the entire surface thereof by surface tension, for example, in a horizontal posture. The liquid layer (liquid coating) is treated, but in the case of the puddle treatment, the thickness of the liquid layer formed on the surface of the substrate is thicker (the liquid amount is larger), and therefore, if it is at 139254.doc -19· 201005854 Spraying air during the drying process tends to cause foaming (foaming) in the liquid layer. In this respect, if the liquid layer is formed by dropping the cleaning liquid along the substrate s in the inclined posture as in the above-described apparatus 1 (cleaning chamber 1C), the thickness of the liquid layer is thin, and it is difficult to spray air. Foaming (foaming) in the liquid layer. Therefore, the presence of this aspect can also effectively prevent the advantage of forming a water mark with the drying process. The device 1 described above is applied to one embodiment of the substrate processing apparatus of the present invention, and the specific configuration thereof can be appropriately changed without departing from the gist of the invention. For example, in the cleaning chamber 1C of the apparatus i, the second supply mechanism 20' is configured as follows: 'the washing water sprayed from the nozzle member 2' is slid down along the inclined member 22, thereby being continuous in the conveying direction. The state supplies the washing water to the substrate s. Of course, as the first supply mechanism 2, a so-called slit nozzle having a slit-like liquid discharge port extending in the conveying direction may be applied, and the slit nozzle may be directly used from the slit nozzle. The washing water is supplied to the substrate s. In other words, the configuration is such that the cleaning water is supplied to the upper end portion of the substrate S in a state in which the conveyance direction is continuous, and the first supply mechanism 20 can be configured as described above. When the first supply mechanism 20 is a slit nozzle, the first supply mechanism 2A and the second supply mechanism may be smashed together, and the cleaning device of the device 1 may be used to illuminate the substrate. The third supply mechanism 26 for supplying water is provided in the cleaning, but the cleaning of the substrate b can be performed by, for example, only the cleaning water from the second mechanism 2G and the second supply mechanism 24 + ' can also be set to omit the I39254.doc -20· 201005854 of the third supply mechanism 26. Further, when the liquid layer is formed on the substrate S by the third supply mechanism 26, it may be set as the first! The supply mechanism 2 is disposed only in one portion (corner portion) of the lower side of the cleaning chamber 1C. Further, the inclination angle Θ1 of the second supply mechanism 24 and the inclination angle θ2 of the air knife 30 are not limited to the numerical values of the embodiment, and may be based on conditions such as the size of the substrate S so that the liquid layer can be formed and removed better. Just set it up. Further, the inclination angle Θ1 of the second supply mechanism 24 and the inclination angle θ2 of the air knife 30 may be the same or different. Further, in the apparatus 1, the surname chamber 1 and the cleaning chamber 1C are separately provided separately, but the nozzle members 11, 12 for supplying, for example, ozone water and oxyacid may be provided in the cleaning chamber 1 . (In particular, the nozzle members 11 and 12 are arranged side by side on the lower side of the nozzle member 21 constituting the first supply mechanism 2, and are switched from the respective nozzle members 11, 12, 21 by the operation of the opening and closing valve 16a or the like. According to this configuration, the etching chamber 1B ^ can be made common to the cleaning chamber 1C, so that the entire apparatus can be simplified. Further, the situation is as follows: ozone water and washing water (pure water) In addition, the nozzle member may be configured to be common, and the liquid species to be ejected may be switched according to the operation of the on-off valve. In addition, the larger substrate S may be formed on the surface of the substrate well/monthly. In the liquid layer of the water, the first supply mechanism 20 may be provided in the cleaning chamber 1C as the upper and lower stages (or plural stages). In the above embodiment, the engraving is described as an example of application of the present invention. The substrate S after the cleaning is cleaned and 139254.doc •21 - 201005854 in the case of drying treatment, but the present invention can also be applied to a device which is made to have a strong water repellency on the surface of the substrate shortly after film formation of the amorphous ruthenium layer, for example. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic cross-sectional view showing a substrate processing apparatus to which the present invention is applied. FIG. 2 is a cross-sectional view showing a configuration of an etching chamber; FIG. 4 is a schematic cross-sectional view showing a configuration of a cleaning chamber. FIG. 5 is a schematic cross-sectional view showing a configuration of a cleaning chamber. FIG. 5 is a schematic cross-sectional view showing a configuration of a cleaning chamber (FIG. κν·ν β surface view) Fig. 6 is a plan view showing a state in which the substrate is cleaned and dried in the cleaning chamber and the drying chamber, ((4) shows the state in which the substrate leading end reaches the second supply mechanism' (b) shows the substrate leading end passing mechanism The state immediately after the ' '(4) indicates that the rear end of the substrate reaches the vicinity of the second supply mechanism, and the portion of the front end portion of the substrate shown in Fig. 6(b) is surrounded by the ridge line. Large picture; and virtual picture is called (8) is the description - while the (four) oblique (four) transporting the substrate, the cleaning water is supplied to the substrate and is allowed to fall, and the dry material is __. Bianxian "cleaning and drying" [Main component symbol description]

1 1A 1B 基板處理裝置 承裁器 钱刻室 I39254.doc -22- 2010058541 1A 1B Substrate processing unit Underwear The money engraving room I39254.doc -22- 201005854

1C1C

IDID

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26 30 S 清洗室 乾燥室 卸載器 搬送輥 蝕刻液供給機構 第1供給機構 喷嘴構件 傾斜構件 第2供給機構 第3供給機構 氣刀(乾燥機構) 基板26 30 S Cleaning chamber Drying chamber Unloader Transfer roller Etching liquid supply mechanism First supply mechanism Nozzle member Tilting member Second supply mechanism Third supply mechanism Air knife (drying mechanism) Substrate

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Claims (1)

201005854 七、申請專利範圍: 1. -種基板處理裝置,其特徵在於包括:搬送機構,其係 以基板表面傾斜之姿勢支撐具有撥水性之基板且沿著 上述表面於水平方向上進行搬送;清洗液供給機構 係對由上述搬送機構所搬送之基板供給清洗液;及乾燥 機構,其係設於較該清洗液供給機構更為基板搬送方向 下游側,藉由氣體壓力而去除基板上之清洗液;且 上述清洗液供給機構包括:第丨供給機構,其係沿著 ® 上述搬送方向而設置,且於該方向上清洗液連續之二態 下,對搬送基板之至少上位側端部供給清洗液;及 第2供給機構,其係靠近該第丨供給機構之下游侧端 部,且沿著從搬送基板之上位側橫越至其下位側之第^ 基板橫越方向而設置,於沿著該第i基板橫越方向清洗 液連續之狀態下對搬送基板供給清洗液; 上述乾燥機構係靠近上述第2供給機構,且沿著從搬 送基板之上位側橫越至其下位側之第2基板橫越方向而 ® 6又置,於沿著該第2基板橫越方向連續之狀態下對搬送 基板喷射氣體。 2. 如請求項1之基板處理裝置,其中 上述清洗液供給機構更包括第3供給機構,其係設置 於較基板搬送方向上之上述第2供給機構更上游側且藉 由上述第1供給機構而供給清洗液之範圍内,對搬送基 板之表面射叢狀地供給處理液。 3. 如請求項2之基板處理裝置,其中 139254.doc 201005854 上述第2供給機構與乾燥機構之間設有遮蔽構件,其 係阻止清洗液向較第2供給機構更下游側飛濺。 4. 如請求項1至3中任一項之基板處理裝置,其中 上述苐2供給機構係以基板下位側之清洗液供給位置 位於較上位側之供給位置更下游側之方式,相對於與上 述搬送方向正交之方向傾斜設置。 5. 如請求項1至3中任一項之基板處理裝置,其中201005854 VII. Patent application scope: 1. A substrate processing apparatus, comprising: a conveying mechanism for supporting a substrate having water repellency in a posture in which a substrate surface is inclined and transporting in a horizontal direction along the surface; cleaning The liquid supply mechanism supplies the cleaning liquid to the substrate conveyed by the transfer mechanism, and the drying mechanism is disposed on the downstream side of the substrate transfer direction from the cleaning liquid supply mechanism, and removes the cleaning liquid on the substrate by the gas pressure. And the cleaning liquid supply mechanism includes: a second supply mechanism that is disposed along the direction of the conveyance direction, and supplies the cleaning liquid to at least the upper end portion of the conveyance substrate in a state in which the cleaning liquid is continuous in the direction And a second supply mechanism that is disposed near the downstream end of the second supply mechanism and that is disposed along a traversing direction of the second substrate that traverses from the upper side of the transport substrate to the lower side thereof. The cleaning liquid is supplied to the transport substrate while the cleaning liquid in the ith substrate is continuous; the drying mechanism is close to the second supply mechanism. Traverse along a conveying feed from the upper side of the substrate to which the second substrate side of the traverse direction ® 6 bits and home, at the continuous traverse the substrate along the second direction the substrate is transferred to a state of gas injection. 2. The substrate processing apparatus according to claim 1, wherein the cleaning liquid supply mechanism further includes a third supply mechanism that is disposed on an upstream side of the second supply mechanism in a substrate transfer direction and is provided by the first supply mechanism In the range in which the cleaning liquid is supplied, the processing liquid is supplied to the surface of the transfer substrate in a cluster shape. 3. The substrate processing apparatus according to claim 2, wherein 139254.doc 201005854 is provided with a shielding member between the second supply mechanism and the drying mechanism, which prevents the cleaning liquid from splashing further downstream than the second supply mechanism. 4. The substrate processing apparatus according to any one of claims 1 to 3, wherein the 苐2 supply mechanism is such that the cleaning liquid supply position on the lower side of the substrate is located on the downstream side of the supply position on the upper side, The direction in which the transport directions are orthogonal is set obliquely. 5. The substrate processing apparatus according to any one of claims 1 to 3, wherein 上述乾燥機構係以基板下位側之氣體喷射位置位於較 上位側之噴射位置更下游側之方式,相對於與上述搬送 方向正交之方向傾斜設置。 6·如請求項丨至3中任一項之基板處理裝置,其中 上述第1供給機構包括:傾斜構件,其係沿著上述搬 送方向設置,且向與該搬送方向正交之方向傾斜;及噴 嘴構件,其係沿著上述搬送方向配置於該傾斜構件之上 方,使清洗液自該喷嘴構件喷出至上述傾斜構件,藉此In the drying mechanism, the gas injection position on the lower side of the substrate is located on the downstream side of the injection position on the upper side, and is inclined with respect to the direction orthogonal to the conveyance direction. The substrate processing apparatus according to any one of the preceding claims, wherein the first supply mechanism includes: a tilting member provided along the transport direction and inclined in a direction orthogonal to the transport direction; a nozzle member disposed above the inclined member along the conveying direction to discharge a cleaning liquid from the nozzle member to the inclined member 一邊形成於上述搬送方向上連續之清洗液流一邊供給 至搬送基板。 7.如請求項6之基板處理裝置,纟中包括處理液供給機 構’其係對上述搬送基板將與上述清洗液不同之處理液 供給至搬絲板,藉此於上料洗液之清洗處理之前, 對基板實施該清洗處理以外之特定處理; 該處理液供給機構包括沿著上述傾斜構件配置於其 方之喷嘴構件’藉由使清洗液自該噴嘴構件噴出至^ 傾斜構件,而-邊形成於上述搬送方向上連續之處理 139254.doc •2· 201005854 流’一邊供給至搬送基板。 8. —種基板處理方法,其特徵在於包括: 液層形成步驟,其係以表面傾斜之姿勢支撐具有撥水 性之基板,且一邊沿著上述表面於水平方向上搬送,— 邊沿著該基板之上位側端部供給清洗液並使其流下,藉 此於基板之表面上’自其搬送方向前端部起依序遍及與 該搬送方向正交之方向全體形成清洗液之液層;及、 ^層去除步驟’其係自形成有上述液層之基板之前端 9 側起依序對上述液層嗔射氣體,藉此將該液層去除。 9.如請求項8之基板處理方法其中 於上述液層去除步驟之喷射氣體之前,具有於上述基 板之搬送方向前端且其上位側端部,形成基板表面自上 述液層露出之部分之步驟,於上述液層去除步驟中自基 板表面之上述露出部分之一側起依序喷射氣體。 139254.docThe substrate is supplied to the transport substrate while being formed in a continuous flow of the cleaning liquid in the transport direction. 7. The substrate processing apparatus according to claim 6, wherein the processing liquid supply means includes supplying the processing liquid different from the cleaning liquid to the conveying board to the conveying substrate, thereby cleaning the feeding liquid Previously, the substrate is subjected to a specific process other than the cleaning process; the process liquid supply mechanism includes a nozzle member disposed along the inclined member, and the cleaning liquid is ejected from the nozzle member to the inclined member. The process 139254.doc • 2· 201005854 is continuously formed in the above-described transport direction and supplied to the transport substrate. 8. A substrate processing method, comprising: a liquid layer forming step of supporting a substrate having water repellency in a posture in which the surface is inclined, and transporting in a horizontal direction along the surface, along the substrate The cleaning liquid is supplied to the upper end portion, and the liquid layer of the cleaning liquid is formed on the surface of the substrate from the front end portion of the substrate in the direction orthogonal to the conveying direction. The removing step 'sjects gas to the liquid layer sequentially from the front end 9 side of the substrate on which the liquid layer is formed, thereby removing the liquid layer. 9. The substrate processing method according to claim 8, wherein before the ejection of the gas in the liquid layer removing step, the step of forming a portion of the substrate surface exposed from the liquid layer is formed at a front end of the substrate in the transport direction and at an upper end portion thereof. The gas is sequentially ejected from one side of the exposed portion of the substrate surface in the liquid layer removing step. 139254.doc
TW98108986A 2008-04-11 2009-03-19 Device and method for treating substrate TW201005854A (en)

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JP3447890B2 (en) * 1996-04-01 2003-09-16 大日本スクリーン製造株式会社 Substrate processing equipment
JP2003305415A (en) * 2002-04-12 2003-10-28 Shibaura Mechatronics Corp Apparatus and method for treating substrate
JP2004095926A (en) * 2002-09-02 2004-03-25 Dainippon Screen Mfg Co Ltd Substrate treatment equipment
JP2004153033A (en) * 2002-10-31 2004-05-27 Dainippon Screen Mfg Co Ltd Substrate processing apparatus

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI452622B (en) * 2011-02-17 2014-09-11 Dainippon Screen Mfg Substrate cleaning device
US9666455B2 (en) 2012-05-17 2017-05-30 Ebara Corporation Substrate cleaning apparatus
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