1240946 五、發明說明（1) [發明所屬技術領域] 本發明係有關使用於液晶顯示裝置用玻璃基板製造等之 搬運式基板處理裝置。 [習知技術] 使用於液晶顯示裝置之玻璃基板，係於作爲素材之玻璃 基板的表面上是藉由反覆施行触刻、剝離等化學性處理而 製造。其處理裝置係大區分爲乾式與濕式，且於濕式上更 區分有批量（ba t ch )式與片式。而片式更細分有旋轉式與 藉由滾輪搬送等之搬送式。 該等基板處理裝置中，搬送式之基本構成係形成爲將基 板一面朝水平方向搬送，一面將處理液供給至基板表面， 且因係爲高效率者，而較以前更被使用在蝕刻處理或剝離 處理中。 在使用於蝕刻處理之搬送式基板處理裝置方面，係由以 矩陣狀所配置於基板搬送線上方之多數噴霧嘴中噴射出蝕 刻液，並藉由使基板通過該蝕刻液中而將蝕刻液供給至基 板整體表面。藉由淋浴處理’基板表面將可除去遮蔽材料 所塗覆的部份而用以選擇性的蝕刻。在蝕刻結束後，緊接 而來的是以淋浴進行洗淨處理。而用於剝離處理用者基本 上亦爲相同之構成。 [發明所欲解決之問題] 在液晶顯示裝置用之玻璃基板方面，於基板大型化的同 時，朝電路高精度化邁進。作爲使用於該基板之配線材料 1240946 五、發明說明（2) ，在以前雖然多爲使用C r，然而，伴隨於最近的高精度化 ，其目標仍係爲轉換至比電阻値爲更小的A 1或是A 1 /Mo。 因此，即使是蝕刻用的搬送式基板處理裝置，雖爲開始使 用A 1用蝕刻液，但可明顯得知伴隨於此種蝕刻液之使用 而產生如下之問題。 A 1用蝕刻液係使用以磷酸爲主成分之物，將該蝕刻液供 給至基板表面後，因與金屬之反應而發生於金屬膜上的氣 泡之情況並不少。該氣泡並無法由蝕刻液之淋浴的物理性 作用而去除，且因其滯留於基板金屬膜上而造成蝕刻不均 的原因。 一般而言，在藉由蝕刻液來進行淋浴處理中，係將基板 通過蝕刻液之淋浴當中在基板表面上使鈾刻液由搬送方向 前方朝後方進行流動、液體置換。基板爲小時雖不會有問 題，但基板爲大型化時，相較於基板兩側部，在中央部會 形成有蝕刻液滯留的傾向，。其結果，於寬度方向中央部與 兩側部係產生在蝕刻速率（r a t e )之差異，此亦爲造成處理 不均之原因。 以A 1用蝕刻液之A 1蝕刻速率，係高於以C r用蝕刻之 C 1：蝕刻速率，雖然藉此而獲得高蝕刻效率，然而另一方面 ，蝕刻後的A 1層之側緣（S 1 d e e d g e )面卻形成不適於下一 層之積層的形狀。 第4圖所示係蝕刻後之A 1層形狀之剖面圖。於素材之 玻璃基板1上形成A1層2及Mo層3，且於其上被覆遮避 1240946 五、發明說明（3 ) 材料4。藉由蝕刻雖然會將未被覆有遮避材料4之部分的 A1層2及Mo層3去除，然而，殘留的A1層2及Mo層3 之側緣面卻會形成如實線所示峭立且陡峭之傾斜。因此， 在A1層2與Mo層3上便無法穩固地載置下一層。爲使能 穩固地載置下一層如細鏈線所示，有必要緩和該側緣面之 傾斜。在無Mo層3的情況下亦形成爲同樣的情形。 再加上，A 1用蝕刻液與C r用蝕刻液相較下係具有較高 粘度，對玻璃基板4表面之濕潤性係相當差。此外，如前 所述，蝕刻速率爲高。因此，在淋浴處理開始時，蝕刻液 之細小液滴所衝擊到的部分將造成處理不均，即使之後的 淋浴處理也無法消除而亦殘留於蝕刻之後。 本發明之目的係爲提供一種搖動淋浴型搬運式基板處理 裝置’可有效率地去除伴隨於供給至基板表面之處理液在 其表面上所產生的氣泡，並且可解除成爲大型基板問題點 之在寬度方向之處理速率的不均。 本發明之其他目的係爲提供一種搖動淋浴型搬運式基板 處理裝置，係適用於A1蝕刻，可將A 1層之側緣面形成配 合適於下一層之積層之和緩的傾斜面，且可解除起因於初 期淋浴之處理不均。 [解決問題之手段] 爲達成上述目的，本發明之搖動淋浴型搬運式基板處理 裝置，係爲將基板以水平姿勢一面朝水平方向搬送一面將 處理液供給至該基板，該基板處理裝置具備有淋浴單元， 1240946 五、 發明說明 ( 4 : ) 係 將 處 理 液 由 配 置 於 基 板 行 進 方 向 與 朝 其 行 進 方 向 之 直 角 方 向 之 多 數 個 噴 霧 嘴 供 給 至 基 板 之 表 面 全 體 而 於 該 淋 浴 單 元 上 設 置 有 搖 動 機 構 係使 各 噴 霧 嘴 朝 向 基 板 行 進 方 向 且 同 步 地 往 兩 側 搖 動 〇 在 本 發 明 之 搖 動 淋 浴 型 搬 運 式 基 板 處 理 裝 置 中 5 於 淋 浴 單 元 之 下 游 端 係 可 設 置 縫 狀 噴 嘴 ， 用 以 將 處 理 液 膜 狀供 給 至 橫 跨 基 板 行 進 方 向 之 局 部 全 寬 〇 此 外 ， 於 淋浴 單 元 上 游 端 係 可 設 置 縫 狀 噴 嘴 用 以 將 處 理 液 膜 狀供 給 至 橫 跨 基 板 行 進 方 向 之 局 部 全 寬 〇 將 構 成 淋 浴 單 元 之 多 數 個 噴 霧 嘴 朝 向 基 板 行 進 方 向 Λ 且 藉 由 朝 兩 側 同 步 搖 動 而 可 將 供 給 至 基 板 表 面 之 處 理 液 在 該 基 板 上 往行 進 方 向 兩 側 交 互 地 流 動 0 亦 即 —· 般 的 噴 霧 是 將 供 給 至 基 板 表 面 上 之 處 理 液 朝 搬 運 方 向 後 方 強 制排出 之 外 僅 只 有 藉 由 溢 :流 :(丨 0 V 1 s r f 1 ow)而 朝 兩 側 白 然 排 出 5 然 而 藉 由 將 噴 霧 嘴 往 基 板 行 進 方 向 兩 側 且 同 步 搖 動 而 使 由 基 板 一 側 部 朝 向 另 一 側 部 之 液 體 流 動 與 另 一 側 部 朝 向 一 側 部 之 液 體 流 動 被 強 制 性 交 互 形 成 〇 其 結 果 可 伴 隨 於 供 給 至 基 板 表 面 之 處 理 液 而 有 效 率 地 除 去 產 生 於 其 表 面 之 氣 泡 並 可 將 寬 度 方 向 之 處 理 速 率 均 等 化 0 於 前 述 淋 浴 單 元 之 下 游 端 係 設 有 噴 霧 嘴 用 以 將 處 理 液 以 膜 狀供 給 至 橫 跨 於 基 板 行 進 方 向 之 局 部 全 寬 藉 由 於 淋 浴 處 ；理 【後之基板: 表 面 上 進 行 載 ；a 丨微薄處理ί 液 之 水 坑 (f )add 1 e ) 處 理 ， 而 可 實 現 近 乎 -6 te j\w 需 進 行 液 體 置 換 之 狀 態 〇 1240946 五、發明說明（5) 藉由此種緩和處理，於A 1蝕刻中將形成側緣面傾斜之緩 坡。 於前述淋浴單元之上游端，係設有噴霧嘴，用以將處理 液以膜狀供給至橫跨基板行進方向之局部全寬，於淋浴處 理前，藉由使基板通過該膜中而使其表面毫無不均地濕潤 。一旦無不均地濕潤後，即使之後接受淋浴處理，也不會 因液滴而產生處理不均。 本發明之搖動淋浴型搬運式基板處理裝置，雖係特別適 用於A1蝕刻，然而對於在效果上具有某程度差異之其他 蝕刻處理亦爲有效。 此外，將構成淋浴單元之多數個噴霧嘴朝兩側搖動之技 術’於習知上係有將基板朝側方傾斜並往水平方向搬送之 傾斜式搬運式基板處理裝置（日本特開平11- 74248號公報 )。然而，在傾斜搬運式中，除了不能進行上述之水坑 (P a d d 1 e )處理，其與淋浴處理的相性於本質上並不佳。 即’傾斜搬送會發生因傾斜產生之液體流動。此種流動 係無法於基板全面形成均一，而會有在開始流動時集中在 先流動之部分的傾向，因此而產生流動不均。且，因傾斜 而減少滯留於基板上之液體，故容易受到噴霧的衝擊，由 此點來看亦會產生流動不均。即使在傾斜搬運中搖動噴霧 嘴’亦無法充分解除該等流動不均。相對於此，將基板以 水平姿勢朝水平方向搬送的情況中，可於基板上達到某種 罕壬度之液層，藉此液層以緩和淋浴所產生之噴霧衝擊，同 1240946 五、發明說明（6 ) 時於基板全面進行均一之液體供給。在此狀態中，藉由搖 動兩側之噴霧嘴，而可交互且強制性地形成由基板一側部 朝向另一側部之液體流動與由另一側部朝向一側部之液體 流動’伴隨於供給至基板表面之處理液而可有效率地除去 產生於其表面之氣泡，同時，可解除在大型基板中於寬度 方向之處理速率不均的問題。 將基板以水平姿勢朝水平方向搬運之技術與使噴霧嘴搖 動之技術的組合並未犧牲將基板以水平姿勢朝水平方向搬 運技術之優點，而可有效地解決其缺點者。 [發明之實施例] 以下，基於圖面說明本發明之實施例。第1圖所示係本 發明第1實施例之搖動淋浴型搬運式基板處理裝置之平面 圖，第2圖爲同一基板處理裝置之主要部分側面圖，第3 圖爲同一基板處理裝置之主要部分正面圖。 本實施例之搖動淋浴型搬運式基板處理裝置，係用以進 行液晶顯示裝置用玻璃基板100(以下簡稱爲基板100)之 A 1蝕刻處理。該基板處理裝置係如第1圖所示，採用U型 迴轉形式之配設，係爲組合直線狀之第1線A、正交連接 於第1線A之第2線B、正交連接於第2線B且並列於第 1線A之第3線C。 第1線A之構成係爲，將承接部1 〇、除液部20、以及 蝕刻部30連結成直線狀。第2線B係水洗部40，裝設有 由上方散布洗淨水至基板1 〇 〇表面之淋浴單元4 1。第3線 1240946 五、發明說明（7 ) C之構成係爲，將移載裝置5 0、旋轉乾燥機（s p 1 η drier) 60、移載裝置70、以及取出部80連結成直線狀。 第1線A與第2線B係具備有於搬運方向以所定間隔並 列之多數個搬運輥，用以將基板1 00朝長邊方向搬運。各 搬送輥係正交於搬運方向之水平輥，將基板1 00水平支撐 且朝水平方向搬運。第2線B、亦即水洗部40之入口部係 設有轉向機構42，用以90度變更基板100之行進方向者 〇 接受A1蝕刻處理之基板100，係藉由搬運裝置90而搬 運至承接部1 0。該基板1 0 0係藉由輥之搬運而由除液部 2 0進入至蝕刻部3 0，在通過此處時而接受蝕刻處理。通 過鈾刻部30之基板、1 00，係藉由連續之輥之搬運而進入至 水洗部40，將行進方向以90度變更而移動水洗部40，於 其移動間接受水洗處理。 移動至水洗部40之出口部之基板：〇〇係藉移載裝置5〇 而由水洗部4 0搬運至旋轉乾燥機6 0。在旋轉乾燥機6 0 完成乾燥之基板1 0 0，係藉由移載裝置7 0而由旋轉乾燥機 60搬運至取出部80，再以搬送裝置90搬出於裝置外。 在本實施例之搖動淋浴型搬運式基板處理裝置方面，特 別是蝕刻部3 0具有很大的特徵點。該蝕刻部3 〇係如第2 圖所示’具備有搬運輥；Π，爲用以將基板1 〇〇朝水平方向 搬運’而爲將蝕刻液供給至基板1 Q 〇表面，係於基板1 〇 〇 之搬運線上方’沿著基板1 〇 〇之行進方向依次設置有第i 1240946 五、發明說明（8) 縫狀噴嘴33、淋浴單元34 '以及第2縫狀噴嘴35。 搬運輥3 1係將基板1 00以設於驅動軸3 1 a之軸向多數 位置之大徑部3 1 b作點支撐，且以設於兩側之鍔部3 1 c進 行基板100之寬度方向的定位。 第1縫狀噴嘴3 3係爲正交於基板1 〇〇行進方向之水平 噴嘴，藉由使A1用蝕刻液呈膜狀流下，而將該蝕刻液以 直線狀供給至橫跨基板1 〇〇表面之行進方向之局部全寬。 淋浴單元34具備有多數之噴霧嘴34a，係爲平行於基板 100行進方向之水平方向與正交於其行進方向之水平方向 以所定間隔配列呈矩陣狀（包含千鳥格狀），而在較基板 100表面更爲寬廣之範圍中噴霧出A1用鈾刻液。 多數之噴霧嘴34a係被裝設至並列於正交於基板100之 行進方向、且分別延伸於基板1 〇〇之行進方向而朝向複數 根頂管34b之下方。各噴霧嘴係使A 1用蝕刻液呈微細液 滴而以圓錐狀進行噴射，在相鄰噴嘴之間，各噴嘴之噴射 範圍係形成爲重合狀。在此，蝕刻液之供給量係設定成在 基板1 00表面上進行充分的液體置換。 多數根頂管34b，爲將各噴霧嘴34a往兩側以所定角度 呈對稱性地同步搖動，係藉搖動機構34往兩方向以所定 角度同步且對稱性地旋轉驅動。搖動機構34c係如第3圖 所示，具有正交於基板100行進方向且呈水平方向之齒條 齒輪34d。齒條齒輪34d係跨越複數根頂管34b且配置於 其上方，嚙合於裝設至各頂管34b之人字齒輪（pini on -1 0- 1240946 五、發明說明（9) g e a r ) 3 4 e。該齒條齒輪3 4 d係以在長度方向可移動地被支 撐者’且藉由設置於其基端側之曲柄機構3 4 f而以所定衝 程被往復驅動。 藉由曲柄機構34f所致之齒條齒輪34d的往復運動，多 數根之頂管34b係往兩方向以所定角度同步且對稱性地於 中心旋轉，藉此，各噴霧嘴34a係朝頂管34b之中心旋轉 處朝兩側以所定角度同步且對稱性地搖動。 第2裂縫噴嘴3 5係與第1裂縫噴嘴3 3相同，爲正交於 基板100之行進方向之水平噴嘴，係於基板100行進方向 以所定間隔配置有多數個。各裂縫噴嘴3 5係與第1裂縫 噴嘴33不同，乃藉由使少量A1用蝕刻液正交於基板100 搬送方向而以膜狀流下，使該蝕刻液以直線狀供給且滯留 於橫跨於基板1 00表面行進方向局部之全寬。亦即，在此 之蝕刻液的供給量，係將供給至基板100表面之蝕刻液設 定爲藉表面張力而保持於其表面上之程度。 36係被配置於較最後段之第2縫狀噴嘴35更後方之裂 縫形式之空氣噴嘴，爲橫跨基板1 〇〇表面行進方向局部之 全寬、且呈直線狀噴射空氣藉以由表面除去蝕刻液。 由此種構成所形成之本實施例之搖動淋浴型搬運式基板 處理裝置中，由除液部20進入至蝕刻部30之基板100， 係以水平姿勢通過形成於第1縫狀噴嘴3 3下方之A 1用蝕 刻液之膜中，於其表面上由前端部依次供給蝕刻液。接著 ，通過形成於淋浴單元3 4下方之A 1用液體之淋浴中，而 1240946 五、發明說明（1〇) 將A1用蝕刻液供給至基板100之整體表面，進行所定之 触刻。 當基板100表面突然受到A1用蝕刻液淋浴噴灑時，於 最初接受到液滴之部分雖形成殘留有處理不均，然而，藉 由於事前通過蝕刻液之膜中，因爲可將蝕刻液均勻地供給 至其表面上，故可防止伴隨於蝕刻液之淋浴處理之處理不 均。 藉由使用A1用蝕刻液之淋浴處理，可選擇性地蝕刻形 成於基板100表面之A1層或Al/Mo層。在此種淋浴處理 中，在基板100金屬膜上會產生有多數細微氣泡之情況， 構成淋浴單元34之多數噴霧嘴34a係於頂管34b中心迴 轉處朝兩側以所定角度同步、且對稱性地進行搖動。藉由 此種搖動，於基板1 〇〇表面上強制性交互地形成將由一側 部朝向另一側部之液體流動與由另一側部朝向一側部之液 體流動。其結果，將有效率地使產生於基板100表面上之 氣泡連同蝕刻液排除至基板1 〇〇之兩側。從而，亦可防止 因氣泡所造成之處理不均。且更使得基板丨00之寬度方向 之處理速率均等化，由此觀點來看亦可達到解除處理不均 之目的。 殘餘A 1層或A 1 / Mo層之側緣面’係形成不適於下一層 積層之峭立且陡峭之傾斜面。然’在蝕刻部30方面則是 緊接著淋浴處理，而於基板100表面供給由第2縫狀噴嘴 35以膜狀流下之A1用蝕刻液’於其表面上保持水坑 -12- 1240946 五、 發明說明 ( 11 ) (P a d d 1 e )狀 態 〇 在 此 期間 緩緩進行蝕刻 處 理 ，如: 第 4 圖 之 細 鏈 線 所 示 殘 餘 A 1層 或 A 1 /Mo層之 側 緣 面 形 成 適 於 下 — 層 積 層 之 和 緩 的 傾 斜面 〇 以 多 數 第 2 縫狀噴嘴 35所構成之水坑 處 理 部 5 細 言 之 則 係 爲 將 藉 由 淋 浴 口口 早 元34所構成之淋 浴 處 理 部 後 段 部 置 換 成 水 坑 處 理 部 者 〇 水坑 處理時間最佳 爲 蝕 刻 液 全 部 處 理 時 間 之 1 0 〜45% ，更佳爲 20〜40% °水坑 處 理 時 間 過 短 時 5 將 Μ j\\\ 法 充 分 和 緩 側 緣 面之 傾斜，若過長 則 會 造 成反 效 果 而 形 成 處 理 效 率 減 低 或無 謂地浪費液體 之 問 題 〇 於水坑 處 理部 中 亦 可使 基 板 100 往復移動。 淋 浴 處 理 部 中 之 噴 霧嘴 34a之搖動角 度 以 30〜< ?0 度 爲 佳 45 〜75 度 爲 更 佳 〇 若上 述角度過小， 則 Λβε y \ w 法 充 分 形 成 基 .板 寬 度 方 向 之 液 髀 流 動。 過大的情況下 將 造 成 液 體 te J ϊ NN =田 5闫 浪 費 之 問 題 〇 而 搖 動 周 期方 面則以1〜1 0秒爲最 〔佳， 2' 秒 爲 更 佳 〇 若 ^TBL m 短 則 兩 方 向之 液體流動將相 互 抵 消 5 造 成 形 成 液 體 流 動 之 困 難 〇 過 長的 情況下亦造成 形 成 液 體 流 動 之 困 難 〇 [發明之效果] 如 上 說 明 所 述 ， 本 發明 之搖動淋浴型 搬 運 式 基 板 處 理 裝 置 係 爲 相 對 於 以 水 平姿 勢而朝水平方 向 所 搬 送 之 基 板 將 構 成 淋 浴 單 元 之 噴 霧嘴 朝向基板行進 方 向 且 藉 由 往 兩 側 同 步 搖 動 而 可 有 效 率地 去除伴隨於將 處 理 液 供 給 至 基 板 表 面 而 在 其 表 面 產 生 之氣 泡。此外，亦 -13- 解 除 在 大 型 基 板 中 1240946 五、發明說明（12) 於覓度方向之處理速率不均等的問題。藉此，可有效地防 止處理不均。 另外，於淋浴單元之下游端設有縫狀噴嘴，係於基板表 面寬度方向全區以膜狀供給處理液，藉由進行水坑處·理， 而可將A 1蝕刻中形成問題之A 1層側緣面之峭立陡斜急升 變化成適於下一層積層之和緩傾斜。 此外，於淋浴單元之上游端設有縫狀噴嘴，係於基板表 面寬度方向全區以膜狀供給處理液，於淋浴處理前，藉由 將基板通過該膜中’而可有效地防止處理不均。 [圖式簡單說明] 第1圖所示，係本發明一實施例之搬運式基板處理裝置 之平面圖。 第2圖所示，係該基板處理裝置之要部側面圖。 第3圖所示’係該基板處理裝置之要部正面圖。 第4圖所示’係蝕刻後之A 1層形狀之斷面圖。 [參考符號說明] 10··· • •承接部 20 · · · ••除液部 30—— · ••蝕刻部 31 · · · ••搬運輥 33· • •第1縫狀噴嘴 34 · · · • •淋浴單元 3 4a· · •..噴霧嘴 -14- 1240946 五、發明說明（13) 3 4b.....頂管 34c.....搖動機構 3 5.....第2縫狀噴嘴 40.....水洗部 4 1.....淋浴單元 50,70 .....移載裝置 60.....旋轉乾燥機 80.....取出部 90.....搬運裝置 10 0.....基板1240946 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a portable substrate processing apparatus used for manufacturing a glass substrate for a liquid crystal display device and the like. [Conventional technology] A glass substrate used in a liquid crystal display device is manufactured by repeatedly applying chemical treatments such as touch-off and peeling on the surface of the glass substrate as a material. The processing device is largely divided into a dry type and a wet type, and a wet type is further distinguished between a batch type and a bat type. The chip type is further divided into a rotary type and a conveying type such as a roller type. In these substrate processing apparatuses, the basic structure of the conveying type is formed so that the substrate is conveyed horizontally and the processing liquid is supplied to the surface of the substrate, and because it is a highly efficient one, it is more used in etching processing than before. Or peeling. In the case of a transport-type substrate processing apparatus used for etching, an etching solution is ejected from a plurality of spray nozzles arranged in a matrix above the substrate transport line, and the etching solution is supplied by passing the substrate through the etching solution. To the entire surface of the substrate. By shower treatment, the substrate surface can be removed by the masking material and used for selective etching. Immediately after the etching is completed, a cleaning process is performed in a shower. The same applies to the peeling treatment. [Problems to be Solved by the Invention] With regard to a glass substrate for a liquid crystal display device, the substrate has been enlarged, and the circuit has been advanced toward high accuracy. As a wiring material used for this substrate, 1240946 V. Description of the invention (2) Although C r was mostly used in the past, with the recent high precision, the goal is to switch to a smaller value than the resistance 値A 1 or A 1 / Mo. Therefore, even in the case of a transport-type substrate processing apparatus for etching, although the etching solution for A1 was started to be used, it is apparent that the following problems occur with the use of such an etching solution. The etching solution for A 1 uses phosphoric acid as a main component. After the etching solution is supplied to the surface of the substrate, air bubbles generated on the metal film due to reaction with the metal are not uncommon. The bubbles cannot be removed by the physical action of the shower of the etchant, and cause uneven etching due to their retention on the metal film of the substrate. Generally speaking, in the shower process using an etching solution, the substrate is passed through the etching solution in a shower to cause the uranium etching solution to flow from the front to the rear and to replace the liquid on the substrate surface. Although the substrate is small, there is no problem, but when the substrate is enlarged, the etching solution tends to stay in the central portion compared to the both sides of the substrate. As a result, a difference occurs in the etching rate (r a t e) between the central portion and the two side portions in the width direction, which is also the cause of uneven processing. The A 1 etching rate with the etching solution for A 1 is higher than the C 1: etching rate with C r etching. Although the high etching efficiency is obtained by this, on the other hand, the side edge of the A 1 layer after the etching However, the (S 1 deedge) surface has a shape that is not suitable for the next layer. Figure 4 is a cross-sectional view of the shape of the A 1 layer after etching. An A1 layer 2 and a Mo layer 3 are formed on the glass substrate 1 of the material, and covered thereon to cover 1240946 V. Description of the invention (3) Material 4. Although the A1 layer 2 and the Mo layer 3 that are not covered by the shielding material 4 are removed by etching, the side edges of the remaining A1 layer 2 and Mo layer 3 are formed as shown by solid lines and steep. Of the tilt. Therefore, the next layer cannot be stably placed on the A1 layer 2 and the Mo layer 3. In order to enable stable placement of the next layer as shown by the thin chain lines, it is necessary to alleviate the inclination of the side edge surface. The same situation was formed even when the Mo layer 3 was absent. In addition, the etching liquid for A 1 and the etching liquid for C r have lower viscosity than the lower system, and the wettability to the surface of the glass substrate 4 is relatively poor. In addition, as described above, the etching rate is high. Therefore, at the beginning of the shower process, the portion hit by the small droplets of the etching solution will cause uneven processing, and even the subsequent shower process cannot be eliminated and remains after the etching. The object of the present invention is to provide a shaking shower-type portable substrate processing apparatus' which can efficiently remove bubbles generated on the surface of the processing liquid supplied to the substrate surface, and can solve the problem of large substrates. Uneven processing rate in the width direction. Another object of the present invention is to provide a shaking shower-type portable substrate processing apparatus, which is suitable for A1 etching, and can form a side surface of the side edge of the layer A1 to form a gentle inclined surface suitable for the layer of the next layer, and can be lifted. Caused by uneven treatment of the initial shower. [Means for Solving the Problem] In order to achieve the above-mentioned object, the shake shower-type transportable substrate processing apparatus of the present invention is to supply a processing liquid to the substrate while transporting the substrate in a horizontal posture while carrying the substrate in a horizontal direction. The substrate processing apparatus includes There is a shower unit, 1240946 V. Description of the invention (4 :) The processing liquid is supplied to the entire surface of the substrate from a plurality of spray nozzles arranged in the substrate traveling direction and a direction orthogonal to the traveling direction of the substrate, and the shower unit is provided with The rocking mechanism makes each spray nozzle swing toward the substrate in the direction of the substrate and synchronously swing to both sides. In the rocking shower-type portable substrate processing device of the present invention, a slit-shaped nozzle can be provided at the downstream end of the shower unit for processing. The liquid film is supplied to a partial full width across the direction of travel of the substrate. In addition, a slit nozzle can be provided at the upstream end of the shower unit to The processing solution is supplied in a film form to a partial full width across the substrate's travel direction. The spray nozzles constituting the shower unit are oriented toward the substrate's travel direction Λ, and the processing liquid supplied to the surface of the substrate can be synchronized by shaking it to both sides. On the substrate, both sides of the traveling direction alternately flow 0. That is, the general spray is forcibly discharging the processing liquid supplied to the substrate surface toward the rear of the conveying direction. Only by overflow: (丨 0 V 1 srf 1 ow) and discharge it to both sides 5 However, by moving the spray nozzle to both sides of the substrate in the direction of substrate movement and synchronously shaking, the liquid flow from one side of the substrate to the other and the other side toward the one side The liquid flow is forcibly formed by mutual interaction. As a result, the processing liquid supplied to the surface of the substrate can efficiently remove bubbles generated on the surface and can The processing rate in the width direction is equalized to 0. A spray nozzle is provided at the downstream end of the aforementioned shower unit to supply the processing liquid in a film form to a partial full width across the traveling direction of the substrate. Substrate: carried on the surface; a 丨 thin treatment ί liquid puddle (f) add 1 e) treatment, and can achieve a state of almost -6 te j \ w liquid replacement is required 01240946 V. Description of the invention (5) By such a relaxation treatment, a gentle slope with a side edge surface inclined will be formed in the A 1 etching. At the upstream end of the aforementioned shower unit, a spray nozzle is provided to supply the processing liquid in a film form to a partial full width across the traveling direction of the substrate. Before the shower treatment, the substrate is made to pass through the film to make it The surface is moist without unevenness. Once it is moisturized without unevenness, even if it is subjected to shower treatment afterwards, there is no unevenness due to droplets. Although the shaking shower-type portable substrate processing apparatus of the present invention is particularly suitable for A1 etching, it is also effective for other etching processes having a certain difference in effect. In addition, a technique of swinging a plurality of spray nozzles constituting a shower unit to both sides is conventionally equipped with a tilting type substrate processing apparatus that tilts a substrate sideways and conveys it horizontally (Japanese Patent Application Laid-Open No. 11-74248 Bulletin). However, in the oblique conveying type, in addition to the above-mentioned puddle (P a d d 1 e) treatment, the compatibility with the shower treatment is not good in nature. That is, 'tilt transfer' causes liquid flow due to tilt. Such a flow system cannot be uniformly formed on the entire surface of the substrate, but tends to concentrate on the part that flows first when the flow starts, and thus causes uneven flow. In addition, the liquid remaining on the substrate is reduced due to the inclination, so it is susceptible to the impact of the spray, and from this point, uneven flow may occur. Even if the spray nozzle 'is shaken during oblique conveyance, such uneven flow cannot be sufficiently relieved. In contrast, when the substrate is transported in a horizontal posture in a horizontal direction, a liquid layer of a certain degree of rareness can be reached on the substrate, and the liquid layer can be used to mitigate the spray impact generated by the shower. Same as 1240946 V. Description of the Invention (6) Uniform liquid supply is carried out on the substrate at all times. In this state, by shaking the spray nozzles on both sides, a liquid flow from one side of the substrate to the other side and a liquid flow from the other side to the one side can be formed interactively and forcibly. The processing liquid supplied to the surface of the substrate can efficiently remove air bubbles generated on the surface, and at the same time, can solve the problem of uneven processing rate in the width direction in a large substrate. The combination of the technique of transporting the substrate in a horizontal posture to the horizontal direction and the technique of swinging the spray nozzle does not sacrifice the advantages of transporting the substrate in the horizontal posture to the horizontal direction, but can effectively solve its disadvantages. [Embodiments of the Invention] Hereinafter, embodiments of the present invention will be described based on the drawings. FIG. 1 is a plan view of a shaking shower-type transportable substrate processing apparatus according to the first embodiment of the present invention, FIG. 2 is a side view of a main part of the same substrate processing apparatus, and FIG. 3 is a front view of a main part of the same substrate processing apparatus Illustration. The shaking shower-type transportable substrate processing apparatus of this embodiment is used to perform A 1 etching processing of a glass substrate 100 for a liquid crystal display device (hereinafter simply referred to as the substrate 100). The substrate processing device is configured as shown in Fig. 1 and adopts a U-shaped rotary form. It is a combination of a linear first line A, a second line B connected orthogonally to the first line A, and an orthogonal connection connected to The second line B is parallel to the third line C of the first line A. The first line A is configured to connect the receiving portion 10, the liquid removing portion 20, and the etching portion 30 in a straight line. The second line B is a water washing unit 40, and a shower unit 41 is provided to distribute washing water from above to the surface of the substrate 1000. Third line 1240946 V. Description of the invention (7) C The structure is that the transfer device 50, the spin dryer 60, the transfer device 70, and the take-out portion 80 are connected in a straight line. The first line A and the second line B are provided with a plurality of conveying rollers arranged at a predetermined interval in the conveying direction to convey the substrate 100 in the longitudinal direction. Each conveying roller is a horizontal roller orthogonal to the conveying direction, and supports the substrate 100 horizontally and conveys it in the horizontal direction. The second line B, that is, the entrance of the washing unit 40, is provided with a steering mechanism 42 for changing the direction of movement of the substrate 100 by 90 degrees. The substrate 100 that has undergone the A1 etching treatment is transported to the receiver by the carrying device 90 Department 1 0. The substrate 100 is moved from the liquid removing section 20 to the etching section 30 by the roller transport, and is subjected to an etching treatment when passing through the substrate. The substrate and 100 passing through the uranium engraving section 30 are moved to the water washing section 40 by continuous roller transportation, and the water washing section 40 is moved by changing the traveling direction by 90 degrees, and the water washing treatment is performed in the moving room. The substrate moved to the exit section of the washing section 40: 〇〇 is transferred from the washing section 40 to the rotary dryer 60 by the transfer device 50. The substrate 100, which has been dried in the rotary dryer 60, is transferred from the rotary dryer 60 to the take-out section 80 by the transfer device 70, and then carried out of the device by the transfer device 90. With regard to the shaking shower-type transportable substrate processing apparatus of this embodiment, particularly, the etching portion 30 has a large feature point. As shown in FIG. 2, the etching section 30 is provided with a transport roller; Π is used to transport the substrate 1000 horizontally, and the etching solution is supplied to the surface of the substrate 1 Q 〇 and attached to the substrate 1 Above the conveying line of 〇〇, i 1240946 is sequentially provided along the traveling direction of the substrate 100. V. Description of the invention (8) The slit nozzle 33, the shower unit 34 ', and the second slit nozzle 35. The conveying roller 3 1 supports the substrate 100 with a large-diameter portion 3 1 b provided at most positions in the axial direction of the drive shaft 3 1 a as a point support, and the width of the substrate 100 is provided by the crotch portions 3 1 c provided on both sides. Orientation. The first slit-shaped nozzle 33 is a horizontal nozzle orthogonal to the substrate 100 running direction. The etching solution for A1 is caused to flow down in a film shape, and the etching solution is linearly supplied to the substrate 100. The partial full width of the direction of travel of the surface. The shower unit 34 includes a plurality of spray nozzles 34a, which are arranged in a matrix (including a houndstooth pattern) at a predetermined interval in a horizontal direction parallel to the traveling direction of the substrate 100 and a horizontal direction orthogonal to the traveling direction of the substrate. The uranium engraving solution for A1 was sprayed in a wider range of 100 surface. Most of the spray nozzles 34a are installed in parallel to the traveling direction of the substrate 100, and extend in the traveling direction of the substrate 100, respectively, and face below the plurality of top pipes 34b. Each spray nozzle is sprayed in a conical shape with fine droplets of an etching solution for A1, and the spraying range of each nozzle is formed to overlap between adjacent nozzles. Here, the supply amount of the etchant is set to be sufficient for liquid replacement on the surface of the substrate 100. In order to swing the spray nozzles 34a symmetrically and symmetrically at a predetermined angle to both sides, the plurality of ejection pipes 34b are driven synchronously and symmetrically by a swing mechanism 34 in both directions at a predetermined angle. As shown in FIG. 3, the swing mechanism 34c has a rack and pinion 34d which is orthogonal to the traveling direction of the substrate 100 and is horizontal. The rack gear 34d spans a plurality of jacking pipes 34b and is arranged above them, and meshes with a herringbone gear mounted on each jacking pipe 34b (pini on -1 0-1240946 V. Description of the invention (9) gear) 3 4 e . The rack and pinion 3 4 d is reciprocally driven at a predetermined stroke by a crank mechanism 3 4 f provided on its base end side movably and supported by a crank mechanism 3 4 f. By the reciprocating movement of the rack and pinion 34d caused by the crank mechanism 34f, the top pipes 34b of most roots are synchronously and symmetrically rotated at the center in a predetermined angle in two directions, whereby each spray nozzle 34a is directed toward the top pipe 34b. The center of rotation rotates synchronously and symmetrically at a predetermined angle towards both sides. The second slit nozzle 35 is a horizontal nozzle, which is the same as the first slit nozzle 33, and is orthogonal to the traveling direction of the substrate 100. The second slit nozzle 35 is disposed at a predetermined interval in the traveling direction of the substrate 100. Each of the crack nozzles 35 and 5 is different from the first crack nozzle 33 in that a small amount of etching solution for A1 is orthogonal to the substrate 100 conveying direction and flows down in a film shape, and the etching solution is linearly supplied and stays across the Partial full width of the substrate 100 in the direction of travel. That is, the supply amount of the etching solution here is set to such an extent that the etching solution supplied to the surface of the substrate 100 is maintained on the surface by the surface tension. 36 is an air nozzle in the form of a crack arranged behind the second slit nozzle 35 in the last stage. It is a partial width across the surface of the substrate 1000 in the direction of travel and sprays air in a straight line to remove the etching from the surface. liquid. In the shaking shower type portable substrate processing apparatus of this embodiment formed by such a structure, the substrate 100 from the liquid removing section 20 to the etching section 30 passes through the horizontally formed portion below the first slit-shaped nozzle 33. In the film for an etching solution for A 1, an etching solution is sequentially supplied from the front end portion on the surface. Next, in a liquid shower for A 1 formed below the shower unit 34, 1240946 V. Description of the Invention (10) An etching solution for A1 is supplied to the entire surface of the substrate 100, and a predetermined touch is performed. When the surface of the substrate 100 is suddenly sprayed with an etching solution by A1, although the portion receiving the liquid droplets is initially formed, there is still uneven processing. However, because the film is passed through the etching solution in advance, the etching solution can be uniformly supplied. To the surface, it can prevent the processing unevenness accompanying the shower treatment of the etchant. The A1 layer or the Al / Mo layer formed on the surface of the substrate 100 can be selectively etched by a shower treatment using an etching solution for A1. In such a shower process, there are cases where a lot of fine bubbles are generated on the metal film of the substrate 100. Most of the spray nozzles 34a constituting the shower unit 34 are synchronized at a predetermined angle and symmetrical at both sides at the center of the top pipe 34b. To shake. By such shaking, a liquid flow from one side to the other side and a liquid flow from the other side to the one side are forcibly formed on the surface of the substrate 1000 in an interactive manner. As a result, bubbles generated on the surface of the substrate 100 and the etchant are efficiently removed to both sides of the substrate 100. As a result, uneven processing due to bubbles can be prevented. In addition, the processing rate in the width direction of the substrate 丨 00 is equalized. From this point of view, the purpose of removing processing unevenness can also be achieved. The side edge surface 'of the residual A 1 layer or A 1 / Mo layer forms a steep and steep inclined surface which is not suitable for the next layer. However, 'the etching part 30 is followed by a shower process, and an etching solution for A1 flowing down from the second slit nozzle 35 in a film shape is supplied on the surface of the substrate 100' to maintain a puddle on its surface -12- 1240946 V. Description of the invention (11) (P add 1 e) state. During this period, the etching process is slowly performed, as shown in the thin chain line in Fig. 4. The side edge surface of the remaining A 1 layer or A 1 / Mo layer is suitable for formation. Bottom—Layered, gently inclined surface. Puddle treatment unit composed of most of the second slit nozzles 35. Specifically, it is to replace the rear part of the shower treatment unit formed by the shower mouth opening element 34. Those who form a puddle treatment department. The best puddle treatment time is 10 to 45% of the total processing time of the etching solution, and more preferably 20 to 40%. When the puddle treatment time is too short, the method will be sufficient. Mild the slope of the side edge surface. If it is too long, it will cause adverse effects and reduce the processing efficiency or waste the liquid unnecessarily. At the puddle The management department can also make the base plate 100 move back and forth. The swinging angle of the spray nozzle 34a in the shower treatment part is preferably 30 to ≦ 0 °, and 45 to 75 ° is more preferable. If the angle is too small, the Λβε y \ w method sufficiently forms the liquid in the width direction of the plate. flow. If it is too large, the problem of liquid te J ϊ NN = Tian 5 Yan waste will be caused. 0 ~ 10 seconds is the best for shaking period (better, 2 'seconds is better. If ^ TBL m is short, then both directions The liquid flow will cancel each other. 5 The difficulty of forming a liquid flow will be caused. The too long case will also cause the difficulty of forming a liquid flow. [Effect of the invention] As described above, the shaking shower type portable substrate processing device of the present invention is The spray nozzles constituting the shower unit are oriented toward the substrate in the horizontal direction with respect to the substrate being transported in the horizontal posture, and the substrate can be efficiently removed by supplying the processing liquid to the substrate surface by supplying the processing liquid to the surface of the substrate. Bubbles on the surface. In addition, -13- also solves the problem of 1240946 in large substrates. V. Description of the invention (12) The problem of uneven processing speed in the direction of searching. This can effectively prevent uneven processing. In addition, a slit-shaped nozzle is provided at the downstream end of the shower unit, and the processing liquid is supplied in a film form over the entire width direction of the substrate surface. A 1 that is a problem in the etching of A 1 can be processed by puddle treatment and processing. The steepness and steepness of the lateral edge of the layer changed sharply into a gentle slope suitable for the next layer. In addition, a slit-shaped nozzle is provided at the upstream end of the shower unit, and the treatment liquid is supplied in a film form over the entire width direction of the substrate surface. Before the shower treatment, the substrate can be effectively prevented from passing through the film through the film Both. [Brief description of the drawings] FIG. 1 is a plan view of a portable substrate processing apparatus according to an embodiment of the present invention. FIG. 2 is a side view of a main part of the substrate processing apparatus. 3 'is a front view of a main part of the substrate processing apparatus. Fig. 4 'is a sectional view of the shape of the A1 layer after etching. [Description of Reference Signs] 10 ··· • • Receiving section 20 · · · • • Liquid removing section 30 — · • • Etching section 31 · · · · • Conveying roller 33 · • • 1st slit nozzle 34 · · · • • Shower unit 3 4a · · .. Spray nozzle -14-1240946 V. Description of the invention (13) 3 4b ..... Top pipe 34c ..... Shaking mechanism 3 5 .... 2 Slit nozzle 40 ..... Washing section 4 1 ..... Shower unit 50, 70 ..... Transfer device 60 ..... Rotary dryer 80 ..... Removal section 90 ..... handling device 10 0 ..... substrate