JP2010036100A - Treatment liquid supply apparatus - Google Patents

Treatment liquid supply apparatus Download PDF

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JP2010036100A
JP2010036100A JP2008201516A JP2008201516A JP2010036100A JP 2010036100 A JP2010036100 A JP 2010036100A JP 2008201516 A JP2008201516 A JP 2008201516A JP 2008201516 A JP2008201516 A JP 2008201516A JP 2010036100 A JP2010036100 A JP 2010036100A
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substrate
liquid
processing liquid
supply apparatus
nozzle member
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Eiji Yamashita
永二 山下
Norio Yoshikawa
典生 芳川
Takuto Kawakami
拓人 川上
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Dainippon Screen Manufacturing Co Ltd
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Dainippon Screen Manufacturing Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To more uniformly and appropriately treat the entire substrate with a relatively small amount of treatment liquid. <P>SOLUTION: A treatment liquid supply apparatus includes a nozzle member 20 that supplies an etching liquid to the substrate S conveyed with a slanted posture. The nozzle member 20 is provided with a liquid accommodating section 22, a counter surface 20a extending in the width direction of the substrate S and opposing to the substrate S at a certain distance; liquid outlet ports 24 that are each provided at a plurality of positions arranged along the counter surface 20a; and paths 26 that guide the etching liquid accommodated in the liquid accommodating section 22 to outlet ports 24, respectively. A gap between the counter surface 20a and the substrate S and a gap between individual liquid outlet ports 24 are set so that a liquid film continuing in the width direction is formed by allowing the treatment liquid delivered onto the substrate S from each liquid outlet port 24 to continue along the counter surface 20a between the counter surface 20a and the substrate S by its surface tension. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、LCD(液晶表示装置)やPDP(プラズマディスプレイ)等のFPD(フラットパネルディスプレイ)用ガラス基板、有機EL用ガラス基板、光ディスク用基板、フォトマスク用ガラス基板、半導体ウエハ等の基板の製造に適用される処理液供給装置に関するものである。   The present invention relates to an FPD (flat panel display) glass substrate such as an LCD (liquid crystal display) or PDP (plasma display), an organic EL glass substrate, an optical disk substrate, a photomask glass substrate, or a semiconductor wafer substrate. The present invention relates to a processing liquid supply apparatus applied to manufacturing.

上記のような基板の製造では、その工程の一つとして、基板表面に形成された薄膜を薬液により除去する工程(例えばエッチング工程)がある。   In manufacturing the substrate as described above, as one of the steps, there is a step (for example, an etching step) of removing a thin film formed on the substrate surface with a chemical solution.

この工程を実施する処理装置としては、基板を傾斜姿勢で搬送しながら、基板上方に配置したシャワーノズルから基板表面に液滴状に薬液を供給、流下させるものが一般に知られており、この装置によると、基板上の薄膜を除去しながら速やかに基板外に流下させることができると共に、基板上の薬液を速やかに新たな薬液に置換できるため、効率良く基板を処理することができる。
特開平7−283185号公報(第1図)
As a processing apparatus for carrying out this process, there is generally known an apparatus for supplying a chemical solution in the form of droplets to a substrate surface from a shower nozzle disposed above the substrate while conveying the substrate in an inclined posture. According to this, since the thin film on the substrate can be removed and quickly flowed out of the substrate, the chemical solution on the substrate can be quickly replaced with a new chemical solution, so that the substrate can be processed efficiently.
JP-A-7-283185 (FIG. 1)

LCDとして、近年、多結晶シリコン(ポリシリコン)薄膜トランジスタを設けたもの(低温ポリシリコンTFT)が多用されている。この種のLCDの製造工程では、アモルファスシリコン層をガラス基板上に形成し、当該シリコン層表面の自然酸化膜を薬液(フッ化水素酸)により除去する工程(エッチング処理)があり、この場合にも、上記のような従来装置を適用して処理を行うことが考えられる。   In recent years, LCDs provided with polycrystalline silicon (polysilicon) thin film transistors (low temperature polysilicon TFTs) have been widely used. In this type of LCD manufacturing process, an amorphous silicon layer is formed on a glass substrate, and a natural oxide film on the surface of the silicon layer is removed with a chemical solution (hydrofluoric acid) (etching process). However, it is conceivable to perform processing by applying the conventional apparatus as described above.

ところが、基板の性質上、次のような問題がある。すなわち、酸化膜が除去されたエッチング処理後の基板表面は強い撥水性を有するため、処理が進行するに伴い基板上に薬液が粒状に点在しつつ不規則に流下するようになり、基板全面に均一に処理を施すことが難しくなる。そこで、多量の薬液を基板上に供給することも考えられるが、この場合には比較的高価な薬液(フッ化水素酸)を大量消費することとなりランニングコストが高くついてしまう。さらに、薬液吐出時の圧力開放により泡が発生し、これに起因して基板品質に影響が出ることも考えられる。従って、これらの問題を解消することが望まれる。   However, due to the nature of the substrate, there are the following problems. That is, since the surface of the substrate after the etching process from which the oxide film has been removed has strong water repellency, the chemical solution is scattered irregularly on the substrate as the process proceeds, and the entire surface of the substrate flows. It becomes difficult to uniformly treat the material. Therefore, it is conceivable to supply a large amount of chemical solution onto the substrate. In this case, however, a large amount of a relatively expensive chemical solution (hydrofluoric acid) is consumed, resulting in high running costs. Furthermore, it is considered that bubbles are generated by releasing the pressure when the chemical solution is discharged, and this causes the quality of the substrate to be affected. Therefore, it is desirable to eliminate these problems.

本発明は、上記のような事情に鑑みてなされたものであり、特に撥水性の強い基板表面を比較的少量の処理液で均一かつ適正に処理することを目的とするものである。   The present invention has been made in view of the above circumstances, and has an object to treat a substrate surface with particularly strong water repellency uniformly and appropriately with a relatively small amount of processing liquid.

上記の課題を解決するために、本発明は、基板をその表面が特定方向から見て傾斜するように支持する支持手段と、この支持手段により支持される基板に対して前記特定方向と平行な方向に相対的に移動しながら基板表面に処理液を供給するノズル部材とを有する処理液供給装置であって、前記ノズル部材は、前記処理液を収容する処理液収容部と、前記支持手段に支持される基板をその上位側から下位側に横断する方向に延びかつその横断方向に亘って前記基板に対向する対向面と、この対向面の前記横断方向に並ぶ複数の位置にそれぞれ設けられる液吐出口と、前記処理液収容部に収容される処理液を各液吐出口にそれぞれ案内する通路とを有し、かつ、前記各液吐出口から基板上に吐出される処理液が前記対向面に沿って連なりその表面張力により当該対向面と前記基板との間に液膜を形成しながら前記基板に沿って流下するように、前記対向面と前記基板との間隔および前記横断方向における前記各液吐出口の間隔が設定されているものである。   In order to solve the above-described problems, the present invention provides a support means for supporting a substrate so that its surface is inclined when viewed from a specific direction, and a substrate parallel to the specific direction with respect to the substrate supported by the support means. A treatment liquid supply apparatus having a nozzle member for supplying a treatment liquid to the substrate surface while moving relative to a direction, wherein the nozzle member is attached to the treatment liquid storage portion for storing the treatment liquid and the support means. Liquids provided in a plurality of positions extending in a direction crossing the substrate to be supported from the upper side to the lower side and facing the substrate across the transverse direction, and a plurality of positions of the opposing surface aligned in the transverse direction. A discharge port and a passage for guiding the processing liquid stored in the processing liquid storage unit to each of the liquid discharging ports, and the processing liquid discharged from each of the liquid discharging ports onto the substrate is the opposite surface Along the table The spacing between the facing surface and the substrate and the spacing between the liquid discharge ports in the transverse direction are such that the liquid flows along the substrate while forming a liquid film between the facing surface and the substrate due to tension. It is set.

この構成によれば、ノズル部材から基板に対してその横断方向に亘って処理液を供給しながら、この状態で基板とノズル部材とを相対的に移動させることにより基板全体に処理液を供給することができる。その際、上記のように、処理液の表面張力を利用して基板の対向面と基板との間に液膜を形成しつつ基板に沿って処理液を流下させるようにノズル部材が構成されているため、比較的少量の処理液でもって基板の前記横断方向に亘って連続に処理液を供給することが可能となる。しかも、ノズル部材(対向面)と基板との間に表面張力による液膜を形成しつつ流下させ得る範囲で各液吐出口から処理液を吐出させればよいため、従来のシャワーノズルのように高圧で処理液を吐出させる必要がなくなり、従って、圧力開放による泡の発生も回避することが可能となる。   According to this configuration, while supplying the processing liquid from the nozzle member to the substrate in the transverse direction, the processing liquid is supplied to the entire substrate by relatively moving the substrate and the nozzle member in this state. be able to. At that time, as described above, the nozzle member is configured to flow the processing liquid along the substrate while forming a liquid film between the opposing surface of the substrate and the substrate using the surface tension of the processing liquid. Therefore, it becomes possible to continuously supply the processing liquid over the transverse direction of the substrate with a relatively small amount of the processing liquid. In addition, the treatment liquid may be discharged from each liquid discharge port within a range that allows the liquid to flow down while forming a liquid film due to surface tension between the nozzle member (opposing surface) and the substrate. It is not necessary to discharge the treatment liquid at a high pressure, and therefore it is possible to avoid generation of bubbles due to pressure release.

より具体的な構成として、前記ノズル部材の処理液収容部は前記横断方向に沿って延び、前記各通路は処理液収容部から略鉛直方向に延びて前記液吐出口に至るものである。   As a more specific configuration, the processing liquid storage portion of the nozzle member extends along the transverse direction, and each of the passages extends from the processing liquid storage portion in a substantially vertical direction to reach the liquid discharge port.

このような構成によると、処理液収容部に導入された処理液は各通路を通じて液吐出口にそれぞれ流下し、各液吐出口から基板上に供給される。これにより前記液膜が良好に形成される。   According to such a configuration, the processing liquid introduced into the processing liquid storage portion flows down to the liquid discharge port through each passage and is supplied onto the substrate from each liquid discharge port. Thereby, the liquid film is formed satisfactorily.

この場合、処理液収容部の底面が略水平となるように設けられているのが好適である。   In this case, it is preferable that the processing liquid container is provided so that the bottom surface thereof is substantially horizontal.

この構成によれば、処理液収容部内での処理液の偏りを防止することができ、各液吐出口からの処理液の吐出流量を均一化することが可能となる。   According to this configuration, it is possible to prevent the treatment liquid from being biased in the treatment liquid storage unit, and to make the discharge flow rate of the treatment liquid from each liquid discharge port uniform.

なお、ノズル部材は、前記対向面のうち前記基板の上位側端部から下位側端部に対応する範囲に亘って前記液吐出口を有するのが好適であるが、前記対向面のうち基板の上位側端部から中間位置又はその近傍に対応する範囲にのみ前記液吐出口を有するものであってもよい。   It is preferable that the nozzle member has the liquid discharge port over a range corresponding to the lower side end portion from the upper side end portion of the substrate in the facing surface. You may have the said liquid discharge port only in the range corresponding to an intermediate position or its vicinity from an upper end part.

また、ノズル部材の対向面は、前記液吐出口以外の部分が平坦に形成されているものであってもよいが、例えば前記横断方向に沿って延びる溝が形成され、この溝内に前記液吐出口が設けられているものでもよい。   Further, the opposing surface of the nozzle member may have a flat portion other than the liquid discharge port. For example, a groove extending along the transverse direction is formed, and the liquid is formed in the groove. A discharge port may be provided.

この構成によれば、溝に沿って処理液が流下するために前記対向面に沿って安定的に処理液を流下させることが可能となり、基板に沿って流下する処理液の連続性をより高度に確保することが可能となる。   According to this configuration, since the processing liquid flows down along the groove, it becomes possible to stably flow down the processing liquid along the facing surface, and the continuity of the processing liquid flowing down along the substrate is enhanced. Can be secured.

本発明の処理液供給装置による、上記のように基板に対して処理液を供給しながら基板とノズル部材とが相対的に移動することにより基板全体に処理液を供給することができ、しかも、処理液の表面張力を利用して基板とノズル部材との間に液膜を形成しながら当該処理液を基板に沿って流下させるため、比較的少量の処理液で基板全体を均一かつ適切に処理することが可能となる。   With the processing liquid supply apparatus of the present invention, the processing liquid can be supplied to the entire substrate by relatively moving the substrate and the nozzle member while supplying the processing liquid to the substrate as described above, Since the processing liquid flows down along the substrate while forming a liquid film between the substrate and the nozzle member using the surface tension of the processing liquid, the entire substrate is uniformly and appropriately processed with a relatively small amount of processing liquid. It becomes possible to do.

本発明の好ましい実施の形態について図面を用いて説明する。   A preferred embodiment of the present invention will be described with reference to the drawings.

図1,図2は、本発明に係る処理液供給装置が適用された基板処理装置を示す概略図であり、図1は平断面図で、図2は縦断面図(要部)でそれぞれ基板処理装置を示している。   1 and 2 are schematic views showing a substrate processing apparatus to which a processing liquid supply apparatus according to the present invention is applied. FIG. 1 is a plan sectional view, and FIG. 2 is a longitudinal sectional view (main part). A processing device is shown.

同図に示す基板処理装置は、アモルファスシリコン層が表面に形成されたガラス基板S(以下、基板Sと略す)に対してレーザーアニールを行う為の前処理としてシリコン層表面に形成された酸化膜のエッチング(ライトエッチング)を施すものである。   The substrate processing apparatus shown in FIG. 1 includes an oxide film formed on the surface of a silicon layer as a pretreatment for performing laser annealing on a glass substrate S (hereinafter abbreviated as substrate S) on which an amorphous silicon layer is formed. Etching (light etching) is performed.

基板処理装置は、基板Sの搬入口12及び搬出口14を備えた箱形の処理槽10を有しており、図中白抜き矢印方向で示すように、上流側(上工程)から搬送されて来る基板Sを搬入口12から当該処理槽10内に搬入し、エッチング処理を施した後、搬出口14から下流側(下工程)に搬出するように構成されている。なお、搬入口12及び搬出口14は、基板Sの搬入出時以外は図外のシャッタにより閉止されており、これによって処理中は処理槽10内が略密閉状態に保たれる。   The substrate processing apparatus has a box-shaped processing tank 10 provided with a carry-in port 12 and a carry-out port 14 for the substrate S, and is conveyed from the upstream side (upper process) as shown by the white arrow direction in the figure. The incoming substrate S is carried into the processing tank 10 from the carry-in port 12 and is subjected to an etching process, and then carried out from the carry-out port 14 to the downstream side (lower process). The carry-in port 12 and the carry-out port 14 are closed by a shutter (not shown) except when the substrate S is carried in and out, whereby the inside of the treatment tank 10 is kept in a substantially sealed state during the treatment.

処理槽10内には、搬入口12から搬出口14へ基板Sを搬送可能な複数の搬送ローラ16(本発明に係る支持手段に相当する;図1では省略)が所定間隔で配備されている。各搬送ローラ16は、基板Sの搬送方向(本発明における特定方向に相当する)と直交する方向に沿って傾斜しており、基板Sを、その表面が基板幅方向一端側から他端側に向かって先下がりとなる傾斜姿勢に支持した状態で、その表面に沿った水平方向に搬送し得るように構成されている。   A plurality of transport rollers 16 (corresponding to the support means according to the present invention; omitted in FIG. 1) capable of transporting the substrate S from the transport inlet 12 to the transport outlet 14 are arranged in the processing tank 10 at predetermined intervals. . Each transport roller 16 is inclined along a direction orthogonal to the transport direction of the substrate S (corresponding to a specific direction in the present invention), and the surface of the substrate S is changed from one end side to the other end side in the substrate width direction. It is configured so that it can be transported in the horizontal direction along the surface in a state where it is supported in an inclined posture that descends toward the front.

処理槽10内には、基板Sに対してエッチング液を供給するための複数のノズル部材20が配備されている。各ノズル部材20は同一構成であり、基板Sの搬送経路(以下、単に搬送経路という)に沿って一定間隔で配備され、それぞれ搬送ローラ16に近接した上方位置に共通の取付け条件に従って固定的に配置されている。   A plurality of nozzle members 20 for supplying an etching solution to the substrate S are provided in the processing tank 10. Each nozzle member 20 has the same configuration, and is provided at regular intervals along the transport path of the substrate S (hereinafter simply referred to as the transport path), and is fixedly fixed at an upper position close to the transport roller 16 according to common mounting conditions. Has been placed.

各ノズル部材20は、図3に示すように、全体が基板搬送方向に扁平に形成されており、基板Sの搬送方向に直交して搬送経路を横断するように、すなわち搬送ローラ16に支持された基板Sをその幅方向に横断するように設けられている。そして、図2に示すように、開閉バルブ32及びポンプ34を備えた供給配管30を通じてタンク36に接続されることにより、前記ポンプ34等の駆動によりタンク36から供給されるエッチング液(当例ではフッ化水素酸)をそれぞれ基板Sの表面(上面)に供給し得るように構成されている。   As shown in FIG. 3, each nozzle member 20 is formed flat in the substrate transport direction, and is supported by the transport roller 16 so as to cross the transport path perpendicular to the transport direction of the substrate S. The substrate S is provided so as to cross the width direction thereof. Then, as shown in FIG. 2, by being connected to the tank 36 through a supply pipe 30 having an opening / closing valve 32 and a pump 34, an etching solution (in this example) supplied from the tank 36 by driving the pump 34 and the like. Hydrofluoric acid) can be supplied to the surface (upper surface) of the substrate S.

ノズル部材20は、その下端部が搬送基板Sの上面に近接しており、上記エッチング液を、当該下端部に形成される液吐出口24から基板上に流下させつつ供給するように構成されている。詳しく説明すると、ノズル部材20の下端部には、その長手方向(すなわち搬送方向と直交する方向)に延びる略平坦な対向面20aが設けられており、この対向面20aに複数の液吐出口24が前記長手方向に沿って一列に並ぶように形成されている。そして、ノズル部材20の内部に、前記長手方向に延びる液収容部22(本発明の処理液収容部に相当する)が設けられると共に当該液収容部22と各液吐出口24とをそれぞれ連絡するように鉛直方向に延びる通路26が設けられており、この構成により、前記供給配管30を通じて液収容部22に導入されるエッチング液を、それぞれ通路26を通じて各液吐出口24から基板S上に供給するように構成されている。なお、図2中符合21は、ノズル部材20に設けられるエッチング液の導入用ポート部を示している。   The lower end portion of the nozzle member 20 is close to the upper surface of the transport substrate S, and is configured to supply the etching solution while flowing down from the liquid discharge port 24 formed in the lower end portion onto the substrate. Yes. More specifically, the lower end portion of the nozzle member 20 is provided with a substantially flat facing surface 20a extending in the longitudinal direction (that is, the direction orthogonal to the transport direction), and a plurality of liquid discharge ports 24 are provided on the facing surface 20a. Are arranged in a line along the longitudinal direction. A liquid storage portion 22 (corresponding to the treatment liquid storage portion of the present invention) extending in the longitudinal direction is provided inside the nozzle member 20 and communicates with the liquid storage portion 22 and each liquid discharge port 24. Thus, the passage 26 extending in the vertical direction is provided. With this configuration, the etching liquid introduced into the liquid storage unit 22 through the supply pipe 30 is supplied from the liquid discharge ports 24 to the substrate S through the passages 26. Is configured to do. Note that reference numeral 21 in FIG. 2 indicates an etching solution introduction port provided in the nozzle member 20.

ノズル部材20の上記対向面20aは、搬送ローラ16に支持される基板Sの表面とほぼ平行となるように傾斜しており、これによって基板Sの表面と前記対向面20aとの間に基板幅方向に亘って均一な隙間(図3中の符合G)が形成されるようになっている。ここで、ノズル部材20の前記液吐出口24の配列間隔(ピッチ)及び対向面20aと基板Sとの上記間隔Gは、各液吐出口24から基板S上に吐出されるエッチング液が前記対向面20aに沿って連なりその表面張力により当該対向面20aと基板Sとの間に液膜を形成しながら当該基板Sに沿って流下するように設定されている。   The opposed surface 20a of the nozzle member 20 is inclined so as to be substantially parallel to the surface of the substrate S supported by the transport roller 16, and thereby the substrate width between the surface of the substrate S and the opposed surface 20a. A uniform gap (symbol G in FIG. 3) is formed across the direction. Here, the arrangement interval (pitch) of the liquid discharge ports 24 of the nozzle member 20 and the interval G between the facing surface 20a and the substrate S are such that the etching liquid discharged from the respective liquid discharge ports 24 onto the substrate S is opposed to the above. It is set so as to flow along the substrate S while forming a liquid film between the facing surface 20a and the substrate S due to the surface tension.

上記のように構成された基板処理装置において、基板Sは、搬入口12を通じて処理槽10内の搬送ローラ16上に受け渡され、当該搬送ローラ16の駆動により処理槽10内に搬入される。この時点では開閉バルブ32は閉止されており、従って、各ノズル部材20による基板Sへのエッチング液の供給は停止されている。   In the substrate processing apparatus configured as described above, the substrate S is transferred onto the transport roller 16 in the processing tank 10 through the carry-in port 12 and is carried into the processing tank 10 by driving the transport roller 16. At this time, the opening / closing valve 32 is closed, and accordingly, the supply of the etching solution to the substrate S by each nozzle member 20 is stopped.

基板Sが完全に処理槽10内に搬入されると、シャッタの駆動により搬入口12が閉じられ、基板Sの搬送が一旦停止される。そしてその後、前記開閉バルブ32が開放されることにより、各ノズル部材20から基板Sへのエッチング液の供給が開始される。   When the substrate S is completely loaded into the processing tank 10, the loading port 12 is closed by driving the shutter, and the conveyance of the substrate S is temporarily stopped. Thereafter, the opening / closing valve 32 is opened, whereby supply of the etching solution from each nozzle member 20 to the substrate S is started.

各ノズル部材20からエッチング液の供給が開始されると、上記の通り、エッチング液は上記対向面20aに沿って互いに連なりながらその表面張力により当該対向面20aと基板Sとの間に液膜を形成した状態で基板Sに沿って流下することとなる。従って、各ノズル部材20から基板Sに対してその幅方向全体に亘って斑なくエッチング液が供給される。   When the supply of the etching solution from each nozzle member 20 is started, as described above, the etching solution continues to each other along the facing surface 20a and forms a liquid film between the facing surface 20a and the substrate S by the surface tension. In this state, it flows down along the substrate S. Accordingly, the etching solution is supplied from each nozzle member 20 to the substrate S without any spots over the entire width direction.

エッチング液の供給開始後、一定時間が経過すると、所定のタイミングで搬送ローラ16が駆動されると共に所定の時間間隔で正転、逆転が切換えられる。具体的には、基板Sの一方向への移動量が少なくともノズル部材20の配列ピッチよりも大きくなるタイミングで上記切換えが行われる(図1の二点鎖線参照)。つまり、上記のように各ノズル部材20から基板全体幅に亘ってエッチング液を供給した状態で基板Sを搬送方向に揺動(搬送方向に進退)させることにより、基板Sの全面にエッチング液が供給されることとなる。   When a predetermined time has elapsed after the start of the supply of the etching solution, the transport roller 16 is driven at a predetermined timing, and forward rotation and reverse rotation are switched at a predetermined time interval. Specifically, the switching is performed at a timing when the amount of movement of the substrate S in one direction is at least larger than the arrangement pitch of the nozzle members 20 (see the two-dot chain line in FIG. 1). That is, as described above, the etching solution is applied to the entire surface of the substrate S by swinging the substrate S in the transport direction (advancing and retreating in the transport direction) while supplying the etchant from the nozzle members 20 over the entire width of the substrate. Will be supplied.

こうして一定時間が経過すると、シャッタの駆動により搬出口14が開放され、基板Sが当該搬出口14から搬出されることにより、当該基板Sのエッチング処理が終了する。   When the fixed time has passed, the carry-out port 14 is opened by driving the shutter, and the substrate S is carried out from the carry-out port 14, whereby the etching process for the substrate S is completed.

以上のように、この基板処理装置では、ノズル部材20により基板Sの幅方向に亘ってエッチング液を供給しながら当該基板Sを搬送方向に揺動させることによって基板全面に処理液を供給するが、この装置では、上記のようなノズル部材20を適用し、エッチング液の表面張力を利用して基板Sとノズル部材20(対向面20a)との間に液膜を形成しながら基板Sに沿ってエッチング液を流下させるので、比較的少量のエッチング液でもって基板Sの幅方向に亘って連続に斑なく処理液を供給することが可能となる。   As described above, in this substrate processing apparatus, the processing liquid is supplied to the entire surface of the substrate by swinging the substrate S in the transport direction while supplying the etching liquid over the width direction of the substrate S by the nozzle member 20. In this apparatus, the nozzle member 20 as described above is applied, and along the substrate S, a liquid film is formed between the substrate S and the nozzle member 20 (opposing surface 20a) using the surface tension of the etching solution. Since the etching solution is caused to flow down, it becomes possible to supply the processing solution without any spots continuously over the width direction of the substrate S with a relatively small amount of the etching solution.

特に、シリコン層表面に形成された酸化膜のエッチング処理ではその処理が進行して酸化膜が除去されると、基板Sの表面が強い撥水性を有するため、エッチング液が粒状に点在しつつ不規則に流下する傾向があるが、この装置によれば、上記のようにノズル部材20(対向面20a)と基板Sとの間に表面張力による液膜を形成しながらエッチング液を流下させるため、不規則なエッチング液の流れを回避しつつノズル部材20(対向面20a)に沿ってエッチング液を連続的にかつ安定的に流下させることができる。   In particular, in the etching process of the oxide film formed on the surface of the silicon layer, when the process proceeds and the oxide film is removed, the surface of the substrate S has strong water repellency, so that the etching solution is scattered in a granular form. Although there is a tendency to flow irregularly, according to this apparatus, the etching solution flows down while forming a liquid film due to surface tension between the nozzle member 20 (opposing surface 20a) and the substrate S as described above. The etching solution can be continuously and stably flowed down along the nozzle member 20 (opposing surface 20a) while avoiding an irregular flow of the etching solution.

従って、従来のようなシャワーノズルを適用してエッチング液を供給する場合と比較すると、少量のエッチング液で基板Sを均一に処理することが可能となり、その結果、エッチング液の消費量を抑制してランニングコストの低廉化を図ることができる。   Therefore, compared with the case where an etching solution is supplied by applying a shower nozzle as in the past, the substrate S can be uniformly processed with a small amount of the etching solution, and as a result, the consumption of the etching solution is suppressed. Running costs can be reduced.

しかも、この装置では、ノズル部材20の対向面20aと基板Sとの間に上記液膜を形成しつつ流下させることができるので、シャワーノズルのように高圧でエッチング液を吐出させる必要がない。そのため、エッチング液の供給に際して圧力開放による泡の発生を伴うおそれがなく、従って、当該泡の発生に起因して基板品質が阻害されるといった不都合を未然に回避することができるという利点もある。   In addition, in this apparatus, since the liquid film can flow down while forming the liquid film between the facing surface 20a of the nozzle member 20 and the substrate S, it is not necessary to discharge the etching liquid at a high pressure unlike a shower nozzle. Therefore, there is no fear that bubbles are generated due to pressure release when the etching solution is supplied. Therefore, there is an advantage that the disadvantage that the substrate quality is hindered due to the generation of the bubbles can be avoided.

ところで、上述した実施形態の基板処理装置は、本発明に係る処理液供給装置が適用された基板処理装置の一例であって、基板処理装置やノズル部材20等の具体的な構成は、本発明の要旨を逸脱しない範囲で適宜変更可能である。   By the way, the substrate processing apparatus of the above-described embodiment is an example of a substrate processing apparatus to which the processing liquid supply apparatus according to the present invention is applied, and specific configurations of the substrate processing apparatus, the nozzle member 20 and the like are described in the present invention. The present invention can be changed as appropriate without departing from the gist of the present invention.

例えば、実施形態のノズル部材20は、対向面20aの全域に亘って液吐出口24が設けられているが、例えば図4に示すように、対向面20aのうち基板Sの幅方向中間又はその近傍よりも上位側に対向する範囲にのみ液吐出口24を設けるようにしてもよい。   For example, in the nozzle member 20 of the embodiment, the liquid discharge port 24 is provided over the entire area of the facing surface 20a. For example, as illustrated in FIG. You may make it provide the liquid discharge port 24 only in the range which opposes an upper side rather than the vicinity.

また、実施形態のノズル部材20は、対向面20a全体を平坦に形成した上で当該平坦面に液吐出口24が形成されているが、例えば図5に示すように、対向面20aにその長手方向に沿って延びる溝20bを形成し、この溝20bの内底部に液吐出口24を設けるようにしてもよい。この構成によれば、溝20bによってエッチング液の流れが規制されるため、より安定的に対向面20aに沿ってエッチング液を流下させることができる。従って、エッチング液の流れが途中で乱れて液膜の連続性が損なわれるといった不都合を確実に回避して、液膜の連続性をより高度に達成することができる。この場合、溝20bの断面形状は、同図に示すような矩形状断面に限らず、半円状(円弧状)断面や三角状(楔状)断面であってもよい。   In addition, the nozzle member 20 of the embodiment is formed with the entire opposing surface 20a flat, and the liquid discharge port 24 is formed on the flat surface. For example, as shown in FIG. A groove 20b extending in the direction may be formed, and the liquid discharge port 24 may be provided at the inner bottom of the groove 20b. According to this configuration, since the flow of the etching solution is regulated by the groove 20b, the etching solution can flow down along the facing surface 20a more stably. Therefore, it is possible to reliably avoid the disadvantage that the flow of the etching solution is disturbed in the middle and the continuity of the liquid film is lost, and to achieve a higher degree of continuity of the liquid film. In this case, the cross-sectional shape of the groove 20b is not limited to a rectangular cross section as shown in the figure, but may be a semicircular (arc-shaped) cross section or a triangular (wedge-shaped) cross section.

なお、実施形態のノズル部材20では、図2に示すように、液収容部22を略水平に設けているが(つまり、その底面が略水平となるように液収容部22を設けているが)、これは液収容部22内でのエッチング液の偏りを防止して各液吐出口24におけるエッチング液の流量を均一化するためのである。従って、液収容部22の容量や導入されるエッチング液の流量との関係で、各液吐出口24における流量の均一化を達成できるような場合には、液収容部22は必ずしも水平である必要なく長手方向に傾いていてもよい。   In the nozzle member 20 of the embodiment, as shown in FIG. 2, the liquid storage portion 22 is provided substantially horizontally (that is, the liquid storage portion 22 is provided so that the bottom surface thereof is substantially horizontal. This is to make the flow rate of the etching solution uniform in each solution discharge port 24 by preventing the unevenness of the etching solution in the solution storage part 22. Accordingly, when the flow rate at each liquid discharge port 24 can be made uniform in relation to the capacity of the liquid storage unit 22 and the flow rate of the introduced etchant, the liquid storage unit 22 is not necessarily horizontal. And may be inclined in the longitudinal direction.

また、実施形態では、処理槽10への基板Sの搬入後、基板Sを一旦停止させた後にエッチング液の供給を開始しているが、基板Sの搬送を停止させることなく一定速度で連続搬送しながらエッチング液の供給を開始するようにしてもよい。また、基板Sの搬入を待ってエッチング液の供給を開始する以外に、例えば装置稼働時には常時各ノズル部材20からエッチング液を吐出させておき(開閉バルブ32を常時「開」としておく)、その状態で基板Sを処理槽10に搬入するようにしてもよい。また、実施形態では、処理槽10内で基板Sを揺動させているが、基板Sを一方向に連続的に搬送しながらエッチング液を基板上に供給するようにしてもよい。   In the embodiment, after the substrate S is carried into the processing bath 10, the supply of the etching solution is started after the substrate S is temporarily stopped. However, the substrate S is continuously transported at a constant speed without stopping the transport. However, the supply of the etching solution may be started. In addition to starting the supply of the etching solution after waiting for the substrate S to be carried in, for example, when the apparatus is operating, the etching solution is always discharged from each nozzle member 20 (the open / close valve 32 is always set to “open”). The substrate S may be carried into the processing tank 10 in the state. In the embodiment, the substrate S is swung in the processing tank 10, but the etching solution may be supplied onto the substrate while the substrate S is continuously transported in one direction.

また、実施形態では、ノズル部材20に対して基板Sを移動(揺動)させることにより基板全面にエッチング液を供給するように構成されているが、勿論、基板Sを静止させた状態でノズル部材20側を移動させることにより基板全面にエッチング液を供給する構成であってもよい。   In the embodiment, the substrate S is moved (swinged) relative to the nozzle member 20 to supply the etching solution to the entire surface of the substrate. The structure may be such that the etching solution is supplied to the entire surface of the substrate by moving the member 20 side.

また、実施形態では、本発明に係る処理液供給装置をエッチング処理用の基板処理装置に適用した例について説明したが、本発明に係る処理液供給装置は、勿論、基板に洗浄液を供給することにより洗浄処理等を施す基板処理装置についても適用可能である。   In the embodiments, the example in which the processing liquid supply apparatus according to the present invention is applied to a substrate processing apparatus for etching processing has been described. However, the processing liquid supply apparatus according to the present invention naturally supplies a cleaning liquid to the substrate. The present invention can also be applied to a substrate processing apparatus that performs a cleaning process or the like.

本発明に係る液供給装置が適用される基板処理装置を示す平断面図である。1 is a plan sectional view showing a substrate processing apparatus to which a liquid supply apparatus according to the present invention is applied. ノズル部材の構成を示す図1のII―II線断面図である。It is the II-II sectional view taken on the line of FIG. 1 which shows the structure of a nozzle member. ノズル部材の構成を示す図2のIII―III線断面図である。It is the III-III sectional view taken on the line of FIG. 2 which shows the structure of a nozzle member. ノズル部材の変形例を示す断面図(図2に対応する図)である。It is sectional drawing (figure corresponding to FIG. 2) which shows the modification of a nozzle member. ノズル部材の変形例を示す断面図(図4に対応する図)である。It is sectional drawing (figure corresponding to FIG. 4) which shows the modification of a nozzle member.

符号の説明Explanation of symbols

1 処理槽
16 搬送ローラ
20 ノズル部材
20a 対向面
22 液収容部
24 液吐出口
26 通路
DESCRIPTION OF SYMBOLS 1 Processing tank 16 Conveyance roller 20 Nozzle member 20a Opposing surface 22 Liquid storage part 24 Liquid discharge port 26 Passage

Claims (6)

基板をその表面が特定方向から見て傾斜するように支持する支持手段と、この支持手段により支持される基板に対して前記特定方向と平行な方向に相対的に移動しながら基板表面に処理液を供給するノズル部材とを有する処理液供給装置であって、
前記ノズル部材は、前記処理液を収容する処理液収容部と、前記支持手段に支持される基板をその上位側から下位側に横断する方向に延びかつその横断方向に亘って前記基板に対向する対向面と、この対向面の前記横断方向に並ぶ複数の位置にそれぞれ設けられる液吐出口と、前記処理液収容部に収容される処理液を各液吐出口にそれぞれ案内する通路とを有し、かつ、前記各液吐出口から基板上に吐出される処理液が前記対向面に沿って連なりその表面張力により当該対向面と前記基板との間に液膜を形成しながら前記基板に沿って流下するように、前記対向面と前記基板との間隔および前記横断方向における前記各液吐出口の間隔が設定されていることを特徴とする処理液供給装置。
Support means for supporting the substrate so that the surface thereof is inclined when viewed from a specific direction, and a treatment liquid on the substrate surface while moving relative to the substrate supported by the support means in a direction parallel to the specific direction. A treatment liquid supply apparatus having a nozzle member for supplying
The nozzle member extends in a direction crossing the substrate supported by the support means and a substrate supported by the support means from the upper side to the lower side, and faces the substrate in the transverse direction. A counter surface, a liquid discharge port provided at each of a plurality of positions aligned in the transverse direction of the counter surface, and a path for guiding the processing liquid stored in the processing liquid storage unit to each liquid discharge port, respectively. And the processing liquid discharged onto the substrate from each liquid discharge port continues along the opposing surface, and forms a liquid film between the opposing surface and the substrate by the surface tension along the substrate. A treatment liquid supply apparatus, wherein an interval between the facing surface and the substrate and an interval between the liquid discharge ports in the transverse direction are set so as to flow down.
請求項1に記載の処理液供給装置において、
前記ノズル部材の処理液収容部は前記横断方向に沿って延び、前記各通路は前記処理液収容部から略鉛直方向に延びて前記液吐出口に至ることを特徴とする処理液供給装置。
The processing liquid supply apparatus according to claim 1,
The processing liquid supply device according to claim 1, wherein the processing liquid storage portion of the nozzle member extends along the transverse direction, and each of the passages extends from the processing liquid storage portion in a substantially vertical direction to the liquid discharge port.
請求項2に記載の処理液供給装置において、
前記処理液収容部の底面が略水平となるように設けられていることを特徴とする処理液供給装置。
In the processing liquid supply apparatus according to claim 2,
A processing liquid supply apparatus, wherein a bottom surface of the processing liquid container is provided so as to be substantially horizontal.
請求項1乃至3の何れか一項に記載の処理液供給装置において、
前記ノズル部材は、前記対向面のうち前記基板の上位側端部から下位側端部に対応する範囲に亘って前記液吐出口を有することを特徴とする処理液供給装置。
The processing liquid supply apparatus according to any one of claims 1 to 3,
The processing member supply apparatus according to claim 1, wherein the nozzle member has the liquid discharge port over a range corresponding to the lower side end portion from the upper side end portion of the substrate in the facing surface.
請求項1乃至3の何れか一項に記載の処理液供給装置において、
前記ノズル部材は、前記対向面のうち前記基板の上位側端部から中間位置又はその近傍に対応する範囲にのみ前記液吐出口を有することを特徴とする処理液供給装置。
The processing liquid supply apparatus according to any one of claims 1 to 3,
The processing liquid supply apparatus according to claim 1, wherein the nozzle member has the liquid discharge port only in a range corresponding to an intermediate position or a vicinity thereof from an upper end of the substrate on the facing surface.
請求項1乃至5の何れか一項に記載の処理液供給装置において、
前記ノズル部材の前記対向面に、前記横断方向に沿って延びる溝が形成され、この溝内に前記液吐出口が設けられていることを特徴とする処理液供給装置。
In the processing liquid supply apparatus according to any one of claims 1 to 5,
A processing liquid supply apparatus, wherein a groove extending along the transverse direction is formed on the facing surface of the nozzle member, and the liquid discharge port is provided in the groove.
JP2008201516A 2008-08-05 2008-08-05 Treatment liquid supply apparatus Pending JP2010036100A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012066177A (en) * 2010-09-22 2012-04-05 Dainippon Screen Mfg Co Ltd Substrate treatment apparatus
WO2012105382A1 (en) * 2011-02-01 2012-08-09 シャープ株式会社 Substrate treatment apparatus and substrate treatment method
KR20140059585A (en) * 2012-11-08 2014-05-16 엘지디스플레이 주식회사 Cleaning apparatus for substrate
KR101856197B1 (en) * 2011-11-25 2018-05-10 세메스 주식회사 Apparatus for providing chemical liquid

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012066177A (en) * 2010-09-22 2012-04-05 Dainippon Screen Mfg Co Ltd Substrate treatment apparatus
WO2012105382A1 (en) * 2011-02-01 2012-08-09 シャープ株式会社 Substrate treatment apparatus and substrate treatment method
KR101856197B1 (en) * 2011-11-25 2018-05-10 세메스 주식회사 Apparatus for providing chemical liquid
KR20140059585A (en) * 2012-11-08 2014-05-16 엘지디스플레이 주식회사 Cleaning apparatus for substrate
KR101966768B1 (en) * 2012-11-08 2019-04-08 엘지디스플레이 주식회사 Cleaning apparatus for substrate

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