201135819 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種基板清潔處理裝置，其係於對液晶顯 示裝置（LCD ’ Liquid Crystal Display)用、電漿顯示器 (PDP，Plasma Display Panel)用、有機發光二極體 (OLED ’ Organic Light Emitting Diode)用、場發射顯示器 (FED ’ Field Emission Display)用、真空螢光顯示 (VFD ’ Vacuum Fluorescent Display)、太陽電池面板用等 之玻璃基板、磁/光碟用之玻璃/陶瓷基板、半導體晶圓、 電子元件基板等之各種基板進行抗蝕劑剝離處理、敍刻處 理專之藥液處理之後’對該基板進行清潔處理。 【先前技術】 例如於LCD、PDP等元件之製造製程中，於將各種藥液 供給至基板之主面而進行抗蝕劑剝離處理、姓刻處理等之 藥液處理後對基板進行水洗處理之情形時，首先，於置換 水洗室（循環水水洗處理部）中將清潔水供給至剛進行藥液 處理後之基板之主面而以清潔水置換基板上之藥液，繼 而，於直接水洗室（新水水洗處理部）中將純水供給至基板 之主面並水洗基板，其後對基板進行乾燥處理。此時，為 了進订直接水洗室中之基板之清潔而使用純水（新水），為 了進行置換水洗室中之基板之清潔而將直接水洗室中使用 過之水回收至循環水箱中並作為清潔水（循環水）而使用， 藉此節減純水之使用量（例如參照專利文獻丨）。 又，亦使用下述裝置，即，由罟揸士冰一，# ’ 田置換水洗室（第1水洗 153330.doc 201135819 部）、第2水洗室（第2水洗部）、及直接水洗室（第3水洗部） 而構成對藥液處理後之基板進行水洗處理之水洗處理部， 首先’於置換水洗室中，將第2水洗室中使用過之水回收 至第.1循環水箱並將其作為清潔水而使用，將清潔水供給 至剛進行藥液處理後之基板之主面並以清潔水置換基板上 之藥液’之後’於第2水洗室中，將直接水洗室中使用過 之水回收至第2循環水箱並將其作為清潔水而使用，對以 清潔水置換主面上之藥液後之基板進行水洗處理，最後， 於直接水洗室中，將純水供給至基板之主面而對基板進行 最終水洗（例如參照專利文獻2)。 圖11中表示先前之基板清潔處理裝置3〇〇之概略構成之 一例。圖11係模式性表示基板清潔處理裝置3〇〇者。 該基板清潔處理裝置300係由依序連設於藥液處理部 1(僅圖示一部分）之後段側之置換水洗部（第.丨水洗部）5、第 2水洗部3、及直接水洗部4(僅圖示一部分）所構成。於直接 水洗部4之後段側，設置有乾燥處理部（未圖示）。 置換水洗部5包括：置換水洗室（第丨水洗室）4〇，其具有 與藥液處理部1之藥液處理室38鄰接而設置之基板搬入口 42及基板搬出口 44;複數個搬送輥（未圖示），其將已搬入 至該置換水洗室40内之藥液處理後之基以相對於水平 面而朝與基板搬送方向正交之方向傾斜之姿勢而支持，二 使基板W於置換水洗室40内朝水平方向進行往復移動.2 口狹縫喷嘴46’其配設於置換水洗室4Q内之基板搬 附近’將清潔水遍及基板w之整個寬产方6而呈簾. 153330.doc 201135819 至已搬入至置換水洗室40内之基板W之上表面；以及上部 喷霧喷嘴48及下部喷霧喷嘴50等，其等係於置換水洗室4〇 内向朝水平方向往復移動之基板W之上、下兩表面分別喷 出清潔水。上部喷霧喷嘴48及下部噴霧喷嘴50係沿基板搬 送方向且相互平行地分別設置有複數個，於各喷霧喷嘴 48、50上，將複數個喷出口於基板搬送方向上設置成一 行。於置換水洗室40之底部，設置有用以將流下至置換水 洗室40之内底部之已使用之清潔水排出的排液路52。 第2水洗部3包括··第2水洗室54，其與置換水洗室4〇鄰 接而設置，並具有基板搬入口 56及基板搬出口 58 ;複數個 搬送輥（未圖示），其將自置換水洗室4〇已搬入至第2水洗室 54内之基板W以相對於水平面朝與基板搬送方向正交之方 向傾斜之姿勢而支持，並將基板w於第2水洗室54内朝水 平方向搬送’·以及上部喷霧喷嘴6〇及下部噴霧喷嘴“等， 其等係於第2水洗室54内向朝水平方向搬送之基板貿之 上、下兩表面分別喷出清潔水。上部噴霧噴嘴6〇及下部喷 霧噴嘴62係沿基板搬送方向且相互平行地分別設置有複數 個，於各噴霧噴嘴60 ' 62上’將複數個嘴出口於基板搬送 t向設置成一行。於第2水洗室54之底部，設置有用以將 :下至第2水洗室54之内底部之已使用之清潔水排出的循 ㈣排水㈣⑲循環水⑽連通連接。 又，於循環水箱6 6上’連通連接有盘纣 4 — + 令^、砘水（新水）之供給源 進仃k路連接之純水供給路68，進 古拉u 運通連接有設置於 1接水洗部4之直接水洗室70之底部 1幻π潔水供給路72。 153330.doc 201135819 於循環水箱66之底部分別連通連接有：插設著送液泵74且 與置換水洗室40内之入口狹縫喷嘴46以及上部喷霧噴嘴48 及下部喷霧喷嘴50分別進行流路連接之清潔水供給路76; 以及插設著送液泵78且與第2水洗室54内之上部喷霧喷嘴 60及下部喷霧喷嘴62分別進行流路連接之清潔水供給路 8〇。進而，於第2水洗室54之底部設置有排水路82，於排 水路82上介插有三方切換閥84，其以如下方式擇一性地切 換流路：將用於基板W之清潔並自基板w上流下至第2水洗 至54之内底部之已使用之清潔水排出，且使於基板w未被 搬入至第2水洗室54内之狀態下未用於基板w之清潔而直 接流下至第2水洗室54之内底部之清潔水返回至循環水箱 66 ° 關於直接水洗部4之構成，僅圖示一部分，但其與第2水 洗部3為相同。但是，直接水洗室7〇内之上部喷霧嘴嘴86 及下部噴霧喷嘴88中係被供給純水（新水），已使用之純水 並不循環使用。而且’直接水洗部4中所使用之清潔水會 透過清潔水供給路72而被輸送至循環水箱66。 [先前技術文獻] [專利文獻] [專利文獻1]曰本專利特開平11-162918號公報（第4_6 頁，圖1) [專利文獻2]曰本專利特開平10-284379號公報（第3_4 頁，圖1) 【發明内容】 153330.doc 201135819 [發明所欲解決之問題] 於上述先前之基板清潔處理裝置300中，一面使藥液處 理室38内剛進行藥液處理後之基板w於置換水洗室4〇内朝 水平方向進行往復移動，一面自上部噴霧喷嘴48及下部喷 霧喷嘴5 0向基板w之上、下兩表面不間斷地喷出清潔水， 藉此以清潔水置換基板W上之藥液。因此，於置換水洗室 40中需要大量的清潔水’故水洗處理中所使用之純水之 量，即供給至第2水洗部3之循環水箱66中之純水、以及供 給至直接水洗部4之上部喷霧喷嘴86及下部喷霧噴嘴88中 之純水之量變得極大。又’置換水洗室4〇中使用之清潔水 全部被廢棄，故於置換水洗室40中大量使用清潔水之結果 會導致排液處理量亦變得極大。進而’於置換水洗室4〇中 使基板W—面朝水平方向進行往復移動一面進行水洗處 理，故處理時間變長。又，置換水洗室4〇之基板w之搬送 方向之尺寸長於基板w之基板搬送方向之尺寸，故藉由置 換水洗室40所佔有之占地面積變大。除此之外，為了完成 基板之水洗處理，分別需要個別•獨立之置換水洗室（第i 水洗室）40、第2水洗室54、及直接水洗室7〇之合適的3 室，故存在下述問題點：藉由該等3室所佔有之占地面積 變大’且產生3室之製造成本。 本發明係鑒於以上情形而完成者，其目的在於提供一種 基板清潔處理裝置，於對藥液處理後之基板進行水洗處理 之情形時，可節減純水之使用量並減少排液量，又可縮短 處理時間，進而可達成裝置整體之省空間化及製造成本之 153330.doc 201135819 降低化。 [解決問題之技術手段] 技術方案！之發明係-種基板清潔處理裝置，其特徵在 於包括.水洗處j里室’其於基板搬送方向依序被劃定出置 換水洗區域、水洗區域、及直接水洗區域，對藥液處理後 之基板進行水洗處理；基板搬送機構，其配設於上述置換 水洗區域内，將基板於一方向連續地朝水平方向搬送；及 清潔水供給機構，其將清潔水供給至藉由上述基板搬送機 構所搬送之基板之主面；上述清潔水供給機構包括以下部 分而構成：入口噴嘴，其於上述置換水洗區域内之入口附 近配叹成相對於基板搬送方向而交又，將清潔水遍及基板 之整個寬度方向而喷出至基板之主面；高壓喷嘴，其於較 上述入口喷嘴更靠基板搬送方向之前側配設成相對於基板 搬送方向而交又，將清潔水以高壓喷出至基板之主面，藉 以堵截基板上之藥液與清潔液之混合液朝基板搬送方向之 則側流動而使基板上之藥液被清潔水急速置換；高壓排出 噴筲其於上述置換水洗區域内較上述入口喷嘴更靠基板 搬送方向之前側、且所搬送之基板之一側端緣附近靠近基 板而配設，將高壓之清潔水朝基板之另一側端緣方向或基 板搬送方向後方噴出，藉此於基板上形成朝基板之另一側 立而緣方向流動之液流’並藉由該液流而將殘留於基板上之 藥液與清潔水之混合液自基板上強制性地排出；送液機 構’其將清潔液輸送至上述入口喷嘴、上述高壓喷嘴、及 上述高壓排出噴嘴；及控制機構，其以如下方式控制上述 153330.doc -9- 201135819 送液機構·於向上述置換水洗區域内搬人基板之前，開始 進行來自上述入口噴嘴、上述高壓喷嘴及上述高壓排出喷 嘴之β潔水之喷出’於自上述置換水洗區域内搬出基板之 後佟止進行來自上述入口喷嘴、上述高壓喷嘴及上述高 壓排出喷嘴之清潔水之噴出；該基板清潔處理裝置進而包 括.氣體喷嘴，其於較上述入口喷嘴更靠基板搬送方向之 月j側配D又成相對於基板搬送方向而交叉，向基板之主面朝 正下方向或相對於基板搬送方向而朝斜反方向喷出氣體， 以阻止藥液與清潔液之混合液附著於基板上並被帶出至置 換水洗區域外；及排水機構，其將流下至上述置換水洗區 域之内底部之清潔水排出。 技術方案2之發明係如技術方案丨之基板處理裝置，其中 上述入口喷嘴、上述高壓喷嘴、上述高壓排出喷嘴及上述 氣體噴嘴係依序配設於基板搬送方向上。 技術方案3之發明係如技術方案1或2之基板清潔處理裝 置，其中上述入口喷嘴係狹縫喷嘴’其具有沿長度方向之 狹縫狀喷出口 ’自該狹縫狀喷出口朝基板之主面，向相對 於正下方向而朝基板搬送方向之前側傾斜之方向簾狀喷出 清潔水。 技術方案4之發明係如技術方案1之基板清潔處理裝置， 其中上述高壓噴嘴係串聯高密度扇形噴霧喷嘴，其具有相 互靠近地排列設置於相對於基板搬送方向而交又之方向上 之複數個噴出口 ’自各喷出口將清潔水分別呈扇狀以高壓 喷出。 153330.doc -10- 201135819 技術方案5之發明係如技術方案1之基板清潔處理裝置， 其中上述高壓噴嘴係2流體喷霧喷嘴，其具有相互靠近地 排列設置於相對於基板搬送方向而交叉之方向上之複數個 噴出口，自各噴出口分別以氣體之壓力將清潔水水霧化而 喷出。 技術方案6之發明係如技術方案1之基板清潔處理裝置， 其中於上述高壓喷嘴上，附設有用以防止自其噴出口噴出 之清潔水之水霧飛散之遮罩。 技術方案7之發明係如技術方案6之基板清潔處理裝置， 其中排列設置有將清潔水之水霧透過上述遮罩吸引並排出 之水霧吸引裝置。 技術方案8之發明係如技術方案1之基板清潔處理裝置， 其中於相對於基板搬送方向而正交之方向上，自上述高壓 排出噴嘴隔開特定之間隔而又連設有至少一個高壓排出喷 嘴。 技術方案9之發明係如技術方案丨之基板清潔處理裝置， 其中於上述水洗區域内配設有將基板於一方向連續地朝水 平方向搬送之基板搬送機構，進而於被搬輸送至上述水洗 區域内之基板之一側端緣附近靠近基板而配設有第〖高壓 排出噴嘴，且於基板搬送方向上自該第丨高壓排出噴嘴隔 開特疋之間隔、於所搬送之基板之一側端緣附近靠近基板 而又配設有至少一個第2高壓排出喷嘴，自該第丨及第2高 壓排出喷嘴將高壓之清潔水朝基板之另一側端緣方向或基 板搬送方向後方喷出，藉此於基板上形成朝基板之另一^ 153330.doc 11 201135819 端緣方向流動之液流，並藉由該液流而將基板上之殘留液 強制性地排出。 技術方案10之發明係如技術方案9之基板清潔處理裝 置’其中於上述水洗區域内，於基板搬送方向上之上述第 1及第2高壓排出喷嘴之間，以相對於基板搬送方向而交叉 之方式配設有高壓喷嘴，自該高壓喷嘴向基板之主面將清 潔水以高壓喷出’藉此堵截基板上之殘留液朝基板搬送方 向之前側流動並使基板上之殘留液被清潔水急速置換，於 較上述而壓喷嘴更靠基板搬送方向之前側，以相對於基板 搬送方向而交叉之方式配設有氣體喷嘴，自該氣體喷嘴向 基板之主面，朝正下方向或相對於基板搬送方向而朝斜反 方向喷出氣體，藉此阻止基板上之附著液被帶出至上述水 洗區域外。 技術方案11之發明係如技術方案1〇之基板清潔處理裝 ^其中上述送液機構係將清潔液輸送至上述第1及第2高 壓排出噴嘴以及上述高壓喷嘴；上述控制機構係以如下方 j控制上述送液機構：於向上述水洗區域内搬入基板之 彳。進行來自上述第1及第2高壓排出噴嘴以及上述高 ，噴嘴之/月潔水之嘴出，於自上述水洗區域内搬出基板之 後’停止進行來自上述第ι及第2高壓排出噴嘴以及上述高 壓噴嘴之清潔水之嘴出。 广案1 2之發明係如技術方案1之基板清潔處理裝 二中於上述水洗區域及上述直接水洗區域中使用並回 之’月潔水之一部分供給至配設於上述置換水洗區域内之 153330.doc -12- 201135819 上述入口喷嘴、上述高壓喷嘴、及上述高壓排出喷嘴。 技術方案13之發明係如技術方案12之基板清潔處理裝 置，其中上述送液機構包括被劃定出第丨及第2儲留部之循 . 環水箱，將來自由上述水洗區域劃定之上述水洗處理室之 已使用之清潔水回收至該第丨儲留部，並將來自由上述直 • 接水洗區域劃定之上述水洗處理室之已使用之清潔水回收 至該第2儲留部。 技術方案14之發明係如技術方案丨之基板清潔處理裝 置，其中於上述水洗處理室内設置有朝與基板搬送方向交 叉之方向延伸之第丨及第2間隔構件，藉由該第1間隔構件 而劃定出上述置換水洗區域與上述水洗區域，並藉由上述 第2間隔構件而劃定出上述水洗區域與上述直接水洗區 域。 [發明之效果] 於技術方案1及技術方案2之發明之基板清潔處理裝置 中，對已搬入至水洗處理室内所劃定之置換水洗區域内之 藥液處理後之基板，自設置於入口附近之入口喷嘴遍及基 板之整個寬度方向❿噴出清潔水，藉此將基板上之藥液以 ’月泳水稀釋並沖走。通過入口喷嘴之配設位置後殘留於基 板上之藥液與清潔水之混合液向前方之流動會因自設置於 較入口噴嘴更靠基板搬送方向前側之高壓喷嘴向基板之主 面以鬲壓噴出之清潔水而被堵截。如此於稀釋藥液向前方 之机動又到堵截之狀態下使基板向前方移動，故於基板通 過高壓噴嘴之配設位置之期間，基板上之藥液會被清潔水 153330.doc 201135819 急速置換。 又，藉由在較入口噴嘴更靠前側且所搬送之基板之一側 端緣附近靠近基板而配設之高壓排出喷嘴，將高壓之清潔 水朝基板之另一側端緣方向或基板搬送方向後方噴出，藉 此於基板上形成朝基板之另一側端緣方向流動之液流並 藉由該液流而將殘留於基板上之藥液與清潔水之混合液自 基板上強制性地排出，且有效阻止向基板搬送方向前方流 動。除此之外，藉由自設置於較入口噴嘴更靠基板搬送方 向前側之氣體噴嘴向基板之主面喷出之氣體之壓力而堵截 基板上之藥液與清潔水之混合液向前方流動。藉由該等入 口喷嘴、高壓喷嘴、高壓排出噴嘴及氣體喷嘴之作用而有 效阻止藥液附著於基板上並被帶出至置換水洗區域外。 該等一連串之水洗處理係於將基板搬入至置換水洗區域 内並於置換水洗區域内朝一方向連續搬送直至自置換水洗 區域内搬出為止之較短時間内執行。又，藉由自高壓噴嘴 向基板之主面以高壓喷出之清潔水而使基板上之藥液被清 潔水急速置換，故使用較小量之清潔水便可效率良好地進 订水洗處理。而且’流下至水洗室之内底部之清潔水係由 排水機構排出，但由控制機構控制送液機構，藉此於向置 換水洗區域内搬入基板之前，開始進行來自入口喷嘴、高 壓喷嘴及高壓排出喷嘴之清潔水之喷出，⑨自置換水洗區 域内搬出基板之後，停止進行來自入口噴嘴、高壓喷嘴及 问壓排出噴嘴之清潔水之喷出，故可控制清潔水之噴出量 及排液量。 153330.doc 201135819 因此，使用技術方案1之發明之基板處理裝置後，可大 幅節省對藥液處理後之基板進行水洗處理時之純水之使用 量，且可減少排液量，另外，可大幅縮短水洗處理時間。 又，藉由被劃定出置換水洗區域'水洗區域及直接水洗 區域之單體之水洗處理室而完成藥液處理後之基板之水洗 處理’故不必如先前般需要個別•獨立之置換水洗室、水 洗室及直接水洗室之合計3室大小之占地面積，從而可謀 求裝置整體之省空間化，進而與3室之整個製造成本相 比，可達成製造成本之降低化。 於技術方案3之發明之基板清潔處理裝置中，對已搬入 至水洗處理室内之藥液處理後之基板，自狹縫喷嘴之狹縫 狀喷出口遍及基板之整個寬度方向而呈簾狀喷出清潔水， 藉此可將基板上之藥液以清潔水效率良好地稀釋並沖走。 於技術方案4之發明之基板清潔處理裝置中，自串聯高 密度扇形噴霧嘴嘴之複數個喷出口向基板之主面以高壓喷 出清潔水，藉此可確實堵截殘留於基板上之藥液與清潔水 之混合液向前方流動。 於技術方案5之發明之基板清潔處理裝置中，自2流體喷 霧喷嘴之複數個喷出口將清潔水以空氣等氣體之壓力水霧 化而與氣體一併向基板之主面噴出，藉此可確實堵截殘留 於基板上之樂液與清潔水之混合液向前方流動。 於技術方案6之發明之基板清潔處理裝置中，藉由自高 壓噴嘴之噴出口將清潔水以高壓喷出而會產生清潔水之水 霧’但利用遮罩可防止該水霧飛散。 I53330.doc 15 201135819 於技術方案7之發明之基板清潔處理裝置中，藉由水霧 吸引裝置而將清潔水之水霧吸引並排出由此可防止含有 藥液之清潔水之水霧再附著於基板上。 於技術方案8之發明之基板清潔處理裝置中，除於所搬 送之基板之一側端緣附近靠近基板而配設之高壓排出喷嘴 之外，於相對於基板搬送方向而正交之方向上，自該高壓 排出喷嘴隔開特定之間隔而又連設有至少一個高壓排出喷 嘴，故即便大尺寸之基板，亦、可確實形成朝基板之另一 側端緣方向流動之液流，藉由該液流而可將殘留於基板上 之藥液與清潔水之混合液自基板上強制性地排出。 於技術方案9之發明之基板清潔處理裝置中，自第丨及第 2咼壓排出喷嘴朝結束置換水洗處理並已搬入至水洗區域 内之基板之另一側端緣方向或基板搬送方向後方噴出高壓 之/月潔水，藉此於基板上形成朝基板之另一側端緣方向流 動之液流’藉由該液流而將基板上之殘留液強制性地排出 並有效阻止向基板搬送方向前方流動》 於技術方案10之發明之基板清潔處理裝置中，藉由自第 :高壓排出喷嘴朝基板之另一側端緣方向或基板搬送方向 後方噴出之清潔水而形成朝基板之另一側端緣方向流動之 液流，藉由該液流而將經置換水洗處理後之基板上之殘留 液自基板上強制性地排出且有效阻止向基板搬送方向前方 流_。使基板W通過第i高壓排出嘴嘴之配設位置後，繼 而’自高壓喷嘴將高壓之清潔水向基板之上表面喷出並 藉由自該高壓喷嘴喷出之清潔水所形成之水之壁而堵截通 153330.doc -16- 201135819 過第1高壓排出噴嘴之配設位置後仍殘留於基板上之殘留 液向前方流動。如此於殘留液向前方之流動受到堵截之狀 態下使基板向前方移動，故於基板通過高壓喷嘴之配設位 置之期間’基板w上之殘留液會被清潔水急速置換。繼 而’於基板通過高壓喷嘴之配設位置之後，藉由自配設於 基板W之一側端緣附近之第2高壓排出喷嘴之喷出口朝基 板之另一側端緣方向或基板搬送方向後方喷出之清潔水， 形成朝基板之另一側端緣方向流動之液流，藉由該液流而 將殘留液自基板上強制性地排出且有效阻止向基板搬送方 向前方流動。 而且，於自水洗區域内搬出基板之前，自氣體噴嘴向基 板之主面噴出氣體，並藉由該喷出之氣體之壓力而堵截基 板上之附著液朝基板搬送方向前方流動，有效阻止基板上 之附著液被帶出至水洗區域外。 於技術方案11之發明之基板清潔處理裝置中，藉由控制 機構以如下方式控制送液機構：於向水洗區域内搬入基板 之前，開始進行來自第1及第2高壓排出噴嘴以及高壓喷嘴 之清潔水之喷出’於自水洗區域内搬出基板之後，停止進 行來自第1及第2高壓排出喷嘴以及高壓喷嘴之清潔水之喷 出，於向水洗區域内未搬入基板時停止進行清潔水之喷 出’故可使清潔水之使用量更少。 於技術方案12及13之發明之基板清潔處理裝置中，可提 高純水之利用效率。 於技術方案14之發明之基板清潔處理裝置中，藉由適當 153330.doc •17· 201135819 選擇第1及第2間隔構件之基板搬送方向之設 且1见置，而可 分別簡易地設定水洗處理室内之基板搬送方向 之置換水洗 區域、水洗區域、及直接水洗區域之長度尺寸且可將來 自水洗區域及直接水洗區域之已使用之清潔水向循環水箱 之第1及第2儲留部中之回收量及濃度設定為所需之值。 【實施方式】 以下，一面參照圖式一面說明本發明之實施形態。 圖1表示本發明之實施形態之一例，其係模式性表示基 板清潔處理裝置200者。再者，對於與圖丨丨中所示之構成 要素及構件相同或對應之構成要素及構件，於圖丨中亦使 用相同之符號》 該基板清潔處理裝置200係由配置於藥液處理部丨（僅圖 示一部分）之後段側之水洗處理室1〇、循環水箱丨16等所構 成，於水洗處理室10之後段側，設置有乾燥處理部（未圖 示）。 水洗處理室1 0係於基板搬送方向被依序劃定出置換水洗 區域201、水洗區域202、及直接水洗區域203。 於置換水洗區域201與水洗區域202之邊界部、及水洗區 域202與直接水洗區域2〇3之邊界部上，分別遍及水洗處理 室10之底部之寬度方向（與基板搬送方向交又之方向）之整 個幅寬而延伸設置有具有與基板搬送路不干擾之高度的間 隔板118及120。 於置換水洗區域201内設置有；複數個搬送輥（未圖 不）’其係將通過水洗處理室丨〇之設置於藥液處理部1之藥 153330.doc 201135819 液處理室38侧之基板搬人σ 12並已搬人至水洗處理室狀 、換欠洗區域201内之藥液處理後的基板w，以相對於水 平:朝與基板搬送方向正交之方向傾斜之姿勢（使基㈣之201135819 VI. [Technical Field] The present invention relates to a substrate cleaning processing apparatus for use in a liquid crystal display device (LCD 'liquid crystal display) or a plasma display panel (PDP). , glass substrate for magnetic OLED 'Organic Light Emitting Diode, field emission display (FED ' Field Emission Display), vacuum fluorescent display (VFD ' Vacuum Fluorescent Display), solar cell panel, etc. / Various substrates such as a glass/ceramic substrate for a compact disc, a semiconductor wafer, and an electronic component substrate are subjected to a resist stripping treatment and a chemical treatment for the etching process, and then the substrate is cleaned. [Prior Art] For example, in a manufacturing process of an element such as an LCD or a PDP, various kinds of chemical liquids are supplied to the main surface of the substrate, and a chemical solution such as a resist stripping treatment or a surname processing is performed, and the substrate is subjected to a water washing treatment. In the case of first, in the replacement washing chamber (circulating water washing treatment unit), the cleaning water is supplied to the main surface of the substrate immediately after the chemical treatment, and the chemical liquid on the substrate is replaced with clean water, and then in the direct washing chamber. In the (new water washing treatment unit), pure water is supplied to the main surface of the substrate, and the substrate is washed, and then the substrate is dried. At this time, in order to order the cleaning of the substrate in the direct washing chamber, pure water (new water) is used, and in order to clean the substrate in the replacement washing chamber, the used water in the direct washing chamber is recovered into the circulating water tank and used as It is used by clean water (circulating water), and the amount of pure water used is reduced by this section (for example, refer to the patent document 丨). Further, the following apparatus is also used, that is, the water washing chamber (the first water washing 153330.doc 201135819), the second water washing chamber (the second water washing portion), and the direct water washing chamber (the first water washing 153330.doc 201135819) by the gentleman ice one, the #' field ( The third water washing unit) is a water washing unit that performs a water washing treatment on the substrate after the chemical liquid treatment. First, in the replacement water washing chamber, the used water in the second water washing chamber is recovered to the first circulating water tank. It is used as clean water, and the clean water is supplied to the main surface of the substrate immediately after the chemical liquid treatment, and the chemical liquid on the substrate is replaced with clean water, and then used in the second water washing chamber, and used in the direct water washing chamber. The water is recycled to the second circulating water tank and used as clean water. The substrate after replacing the chemical liquid on the main surface with clean water is subjected to water washing treatment, and finally, pure water is supplied to the main substrate in the direct water washing chamber. The substrate is subjected to final water washing (see, for example, Patent Document 2). Fig. 11 shows an example of a schematic configuration of a conventional substrate cleaning processing apparatus 3A. Fig. 11 is a view schematically showing the substrate cleaning processing device 3. The substrate cleaning processing apparatus 300 is connected to the replacement water washing unit (the first water washing unit) 5, the second water washing unit 3, and the direct water washing unit 4 which are sequentially connected to the chemical liquid processing unit 1 (only a part of which is shown). (only a part of the diagram). A drying treatment unit (not shown) is provided on the subsequent stage side of the direct water washing unit 4. The replacement water washing unit 5 includes a replacement water washing chamber (the second water washing chamber) 4A, and a substrate carrying inlet 42 and a substrate carrying port 44 which are provided adjacent to the chemical processing chamber 38 of the chemical processing unit 1; a plurality of conveying rollers (not shown), the base after the chemical solution that has been carried into the replacement washing chamber 40 is supported in a posture inclined with respect to the horizontal plane in the direction orthogonal to the substrate conveying direction, and the substrate W is replaced. The inside of the washing chamber 40 reciprocates in the horizontal direction. The two slit nozzles 46' are disposed in the vicinity of the substrate moving in the replacement washing chamber 4Q. The cleaning water is spread over the entire wide side of the substrate w to form a curtain. 153330. Doc 201135819 to the upper surface of the substrate W that has been carried into the replacement washing chamber 40; and the upper spray nozzle 48 and the lower spray nozzle 50, etc., which are driven in the replacement washing chamber 4 to reciprocate in the horizontal direction. The upper and lower surfaces are respectively sprayed with clean water. The upper spray nozzles 48 and the lower spray nozzles 50 are provided in plural in parallel with each other in the substrate transfer direction, and a plurality of discharge ports are provided in a row in the substrate transfer direction on each of the spray nozzles 48 and 50. At the bottom of the displacement washing chamber 40, a draining path 52 for discharging the used clean water flowing down to the bottom of the displacement washing chamber 40 is provided. The second water washing unit 3 includes a second water washing chamber 54 which is provided adjacent to the replacement water washing chamber 4A and has a substrate carrying inlet 56 and a substrate carrying port 58. A plurality of conveying rollers (not shown) are provided. In the replacement washing chamber 4, the substrate W that has been carried into the second washing chamber 54 is supported in a posture inclined with respect to the horizontal plane in a direction orthogonal to the substrate conveying direction, and the substrate w is horizontally placed in the second washing chamber 54. In the direction of the transport, the upper spray nozzles 6 and the lower spray nozzles, etc., are used to discharge clean water on the upper and lower surfaces of the substrate transported in the horizontal direction in the second washing chamber 54. 6〇 and the lower spray nozzles 62 are provided in a plurality in parallel with each other in the substrate transport direction, and are disposed in a row on each spray nozzle 60'62' to discharge a plurality of nozzles to the substrate. At the bottom of the chamber 54, there is provided a (four) drainage (four) 19 circulating water (10) for discharging the used clean water discharged to the bottom of the second washing chamber 54. Further, the circulating water tank 66 is connected纣 4 — + order ^, The supply source of water (new water) is connected to the pure water supply path 68 connected to the k-way, and the entrance to the Gula U is connected to the bottom 1 of the direct washing chamber 70 of the water receiving unit 4. 153330.doc 201135819 is connected to the bottom of the circulating water tank 66 respectively: a liquid feeding pump 74 is inserted and flows respectively with the inlet slit nozzle 46 and the upper spray nozzle 48 and the lower spray nozzle 50 in the replacement washing chamber 40. The clean water supply path 76 connected to the road; and the clean water supply path 8B in which the liquid supply pump 78 is inserted and connected to the upper spray nozzle 60 and the lower spray nozzle 62 in the second water washing chamber 54 respectively. Further, a drain passage 82 is provided at the bottom of the second washing chamber 54, and a three-way switching valve 84 is interposed in the drain passage 82, and the flow passage is selectively switched in such a manner as to be used for cleaning the substrate W and The clean water that has been used in the bottom of the substrate w to the bottom of the second water wash to 54 is discharged, and is not used for the cleaning of the substrate w in the state where the substrate w is not carried into the second water washing chamber 54. The clean water at the bottom of the second washing chamber 54 is returned to the circulating water tank 66 Although the configuration of the direct water washing unit 4 is only partially shown, it is the same as that of the second water washing unit 3. However, in the direct washing chamber 7, the upper spray nozzle 86 and the lower spray nozzle 88 are supplied with pure water. (New water), the pure water that has been used is not recycled, and the clean water used in the direct water washing section 4 is sent to the circulating water tank 66 through the clean water supply path 72. [Prior Art] [Patent Literature] [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei 11-162918 (page 4-6, Fig. 1) [Patent Document 2] Japanese Patent Laid-Open No. Hei 10-284379 (page 3_4, Fig. 1) 153330.doc 201135819 [Problem to be Solved by the Invention] In the above-described substrate cleaning processing apparatus 300, the substrate w immediately after the chemical liquid treatment in the chemical processing chamber 38 is horizontally placed in the replacement washing chamber 4 The direction is reciprocated, and the cleaning water is discharged from the upper spray nozzle 48 and the lower spray nozzle 50 to the upper and lower surfaces of the substrate w without interruption, thereby replacing the chemical liquid on the substrate W with the clean water. Therefore, a large amount of clean water is required in the replacement washing chamber 40. Therefore, the amount of pure water used in the water washing treatment, that is, the pure water supplied to the circulating water tank 66 of the second water washing unit 3, and the direct water washing unit 4 are supplied. The amount of pure water in the upper spray nozzle 86 and the lower spray nozzle 88 becomes extremely large. Further, the cleaning water used in the replacement washing chamber 4 is completely discarded, so that the use of the cleaning water in the replacement washing chamber 40 in a large amount causes the discharge processing amount to become extremely large. Further, in the replacement washing chamber 4, the substrate W-surface is reciprocated in the horizontal direction and subjected to a water washing treatment, so that the treatment time becomes long. Further, since the size of the substrate w in the replacement washing chamber 4 is longer than the size of the substrate w in the substrate transport direction, the area occupied by the replacement of the washing chamber 40 becomes large. In addition, in order to complete the water washing treatment of the substrate, separate and independent replacement washing chambers (i-th washing chamber) 40, second washing chamber 54, and a direct washing chamber 7 are required for each of the three chambers. The problem point is that the occupied area occupied by the three chambers becomes large, and the manufacturing cost of three chambers is generated. The present invention has been made in view of the above circumstances, and an object thereof is to provide a substrate cleaning processing apparatus which can reduce the amount of pure water used and reduce the amount of liquid discharged when the substrate after the chemical liquid treatment is subjected to a water washing treatment. The processing time is shortened, and the space saving of the entire device and the manufacturing cost can be reduced by 153330.doc 201135819. [Technical means to solve the problem] Technical solution! The invention relates to a substrate cleaning processing apparatus characterized in that it comprises: a water washing chamber, wherein the liquid washing direction is sequentially designated to replace the water washing area, the water washing area, and the direct water washing area, and the liquid medicine is treated. The substrate is subjected to a water washing treatment; the substrate transfer mechanism is disposed in the replacement water washing region, and the substrate is continuously conveyed in a horizontal direction in one direction; and the cleaning water supply mechanism supplies the cleaning water to the substrate transfer mechanism The main surface of the substrate to be conveyed; the cleaning water supply mechanism includes: an inlet nozzle that is sighed in the vicinity of the inlet in the replacement water washing region to be disposed in a direction opposite to the substrate conveying direction, and the cleaning water is spread over the entire substrate The main surface of the substrate is ejected in the width direction; the high-pressure nozzle is disposed on the side opposite to the substrate transport direction from the inlet nozzle to be disposed opposite to the substrate transport direction, and the clean water is ejected to the main substrate at a high pressure. The surface is used to block the mixture of the liquid medicine and the cleaning liquid on the substrate to flow toward the side of the substrate, thereby causing the medicine on the substrate The liquid is rapidly replaced by the clean water; the high-pressure discharge squirt is disposed in the replacement water washing zone on the side before the substrate transport direction from the inlet nozzle, and the vicinity of the one end edge of the substrate to be transported is disposed close to the substrate, and the high pressure is applied. The cleaning water is ejected toward the other end edge of the substrate or the rear side of the substrate transporting direction, thereby forming a liquid flow flowing toward the other side of the substrate in the direction of the substrate, and remaining on the substrate by the liquid flow. a mixture of the liquid chemical and the clean water is forcibly discharged from the substrate; the liquid supply mechanism 'delivers the cleaning liquid to the inlet nozzle, the high pressure nozzle, and the high pressure discharge nozzle; and the control mechanism, in the following manner Controlling the above-mentioned 153330.doc -9-201135819 liquid supply mechanism to start the discharge of the ?Jie water from the inlet nozzle, the high pressure nozzle, and the high pressure discharge nozzle before moving the substrate into the replacement water washing zone After the substrate is removed from the replacement water washing zone, the cleaning water from the inlet nozzle, the high pressure nozzle, and the high pressure discharge nozzle is stopped The substrate cleaning processing device further includes a gas nozzle that is disposed on the side of the substrate j in the substrate transport direction from the inlet nozzle and intersects with the substrate transport direction, and faces the main surface of the substrate in a downward direction or The gas is ejected in a diagonally opposite direction with respect to the substrate transport direction to prevent the mixed solution of the chemical solution and the cleaning liquid from adhering to the substrate and being carried out to the outside of the replacement water washing region; and the drainage mechanism that will flow down to the replacement water washing region The clean water at the bottom is discharged. According to a second aspect of the invention, in the substrate processing apparatus of the invention, the inlet nozzle, the high pressure nozzle, the high pressure discharge nozzle, and the gas nozzle are sequentially disposed in a substrate transfer direction. The invention of claim 3 is the substrate cleaning processing apparatus according to claim 1 or 2, wherein the inlet nozzle is a slit nozzle having a slit-shaped discharge port in the longitudinal direction from the slit-shaped discharge port toward the substrate In the surface, the cleaning water is ejected in a curtain shape in a direction inclined toward the front side in the substrate conveyance direction. The invention of claim 4 is the substrate cleaning processing apparatus according to the first aspect, wherein the high-pressure nozzle is a series high-density fan-shaped spray nozzle having a plurality of adjacent high-density fan-shaped spray nozzles arranged in close proximity to each other in a direction opposite to a substrate transport direction. The discharge port's clean water is fanned from the respective outlets at a high pressure. The invention is the substrate cleaning processing apparatus according to the first aspect of the invention, wherein the high-pressure nozzle system 2 fluid spray nozzles are arranged adjacent to each other and arranged to intersect with respect to the substrate transport direction. A plurality of discharge ports in the direction are sprayed by atomizing the clean water from the respective discharge ports by the pressure of the gas. The invention of claim 6 is the substrate cleaning apparatus according to the first aspect of the invention, wherein the high pressure nozzle is provided with a mask for preventing the water mist of the clean water sprayed from the discharge port from scattering. The invention of claim 7 is the substrate cleaning processing apparatus according to claim 6, wherein the water mist suction device that sucks and discharges the water mist of the cleaning water through the mask is arranged. The invention of claim 8 is the substrate cleaning processing apparatus according to claim 1, wherein at least one high-pressure discharge nozzle is connected from the high-pressure discharge nozzle at a predetermined interval in a direction orthogonal to a substrate transfer direction. . The invention of claim 9 is the substrate cleaning processing apparatus according to the aspect of the invention, wherein a substrate transfer mechanism that continuously transports the substrate in a horizontal direction in one direction is disposed in the water washing region, and is further transported to the water washing region. The first high-pressure discharge nozzle is disposed adjacent to the substrate in the vicinity of the side edge of the substrate, and is spaced apart from the second high-pressure discharge nozzle in the substrate transfer direction at one side of the substrate to be transported. At least one second high-pressure discharge nozzle is disposed adjacent to the substrate, and the high-pressure clean water is ejected toward the other end edge of the substrate or the rear side of the substrate transfer direction from the second and second high-pressure discharge nozzles. The liquid flow flowing toward the edge of the other end of the substrate is formed on the substrate, and the residual liquid on the substrate is forcibly discharged by the liquid flow. According to a tenth aspect of the invention, in the substrate cleaning processing apparatus of the ninth aspect, the first and second high-pressure discharge nozzles in the substrate transfer direction intersect with each other in the substrate transfer direction. The method is provided with a high-pressure nozzle, and the clean water is ejected from the high-pressure nozzle to the main surface of the substrate at a high pressure, thereby flowing the residual liquid on the substrate to the front side of the substrate transport direction and causing the residual liquid on the substrate to be washed rapidly by the clean water. In the replacement, the gas nozzle is disposed on the side of the substrate in the direction in which the substrate is conveyed in the direction in which the substrate is conveyed, and the gas nozzle is directed from the gas nozzle to the main surface of the substrate in the downward direction or relative to the substrate. The gas is ejected in the opposite direction in the direction of the transport, thereby preventing the adhering liquid on the substrate from being carried out to the outside of the water washing region. The invention of claim 11 is the substrate cleaning processing device according to the first aspect of the invention, wherein the liquid supply mechanism supplies the cleaning liquid to the first and second high pressure discharge nozzles and the high pressure nozzle; and the control mechanism is as follows: The liquid supply mechanism is controlled to move the substrate into the water washing area. Performing the nozzles from the first and second high-pressure discharge nozzles and the high-nozzle/month clean water, and stopping the transfer from the first and second high-pressure discharge nozzles and the high pressure after the substrate is carried out from the water washing region The mouth of the nozzle is clean. The invention of the case of the case of the invention is as follows: in the substrate cleaning treatment device 2 of the first aspect, the portion of the monthly cleaning water used in the water washing region and the direct water washing region is supplied to the 153330 disposed in the replacement water washing region. .doc -12- 201135819 The inlet nozzle, the high pressure nozzle, and the high pressure discharge nozzle. The invention of claim 13 is the substrate cleaning apparatus according to claim 12, wherein the liquid supply mechanism includes a ring water tank in which the third and second storage portions are defined, and the water washing in the future is determined by the water washing region. The cleaned water used in the treatment chamber is recovered to the second storage portion, and the used clean water from the water washing treatment chamber defined by the direct water washing region is recovered to the second storage portion. According to a fourth aspect of the invention, in the substrate cleaning processing device of the invention, the second and second spacer members extending in a direction intersecting the substrate transport direction are provided in the water washing chamber, and the first spacer member is provided by the first spacer member The replacement water washing zone and the water washing zone are defined, and the water washing zone and the direct water washing zone are defined by the second spacing member. [Effect of the Invention] In the substrate cleaning processing apparatus according to the first aspect of the invention of the first aspect and the second aspect, the substrate which has been processed into the chemical washing liquid in the replacement washing zone defined in the washing processing chamber is disposed near the inlet. The inlet nozzle sprays clean water throughout the width direction of the substrate, thereby diluting and washing away the liquid medicine on the substrate with 'moon swimming water. The flow of the mixture of the liquid chemical and the clean water remaining on the substrate after passing through the position of the inlet nozzle is pressed toward the main surface of the substrate by the high pressure nozzle provided on the front side of the substrate transfer direction from the inlet nozzle. The clean water that was sprayed out was blocked. In this manner, the substrate is moved forward in the state in which the dilute liquid is moved forward and blocked. Therefore, the liquid on the substrate is rapidly replaced by the cleaning water during the period in which the substrate passes through the arrangement of the high pressure nozzle. Moreover, the high-pressure discharge nozzle is disposed toward the other end edge of the substrate or the substrate by the high-pressure discharge nozzle disposed closer to the substrate than the one end edge of the substrate on the front side of the inlet nozzle. Spraying backward in the direction, thereby forming a liquid flow flowing toward the other end edge of the substrate on the substrate, and forcibly mixing the liquid chemical and the clean water remaining on the substrate from the substrate by the liquid flow The discharge is performed, and the flow in the forward direction of the substrate conveyance is effectively prevented. In addition, the mixture of the chemical liquid and the clean water on the substrate is flowed forward by the pressure of the gas ejected from the gas nozzle provided on the front side of the substrate transfer side from the inlet nozzle to the main surface of the substrate. The inlet nozzle, the high pressure nozzle, the high pressure discharge nozzle, and the gas nozzle act to prevent the chemical from adhering to the substrate and being carried out of the replacement water washing region. The series of water washing processes are performed in a short period of time after the substrate is carried into the replacement water washing zone and continuously conveyed in one direction in the replacement water washing zone until it is carried out from the replacement water washing zone. Further, since the chemical liquid sprayed on the substrate from the high pressure nozzle to the main surface of the substrate is rapidly replaced by the clean water, the water washing process can be efficiently performed using a small amount of the clean water. Further, the clean water flowing down to the bottom of the washing chamber is discharged by the drain mechanism, but the liquid feeding mechanism is controlled by the control mechanism to start the inlet nozzle, the high pressure nozzle, and the high pressure discharge before the substrate is loaded into the replacement washing zone. The discharge of the clean water from the nozzle, 9 after the substrate is removed from the replacement water washing zone, the discharge of the clean water from the inlet nozzle, the high pressure nozzle, and the pressure discharge nozzle is stopped, so that the discharge amount and the discharge amount of the clean water can be controlled. . 153330.doc 201135819 Therefore, by using the substrate processing apparatus of the invention of the first aspect of the invention, the amount of pure water used for the water-washing treatment of the substrate after the chemical liquid treatment can be greatly reduced, and the amount of liquid discharged can be reduced, and the amount of liquid discharged can be greatly reduced. Shorten the washing time. Further, by defining the water washing treatment chamber of the single water washing treatment chamber in the water washing region and the direct water washing region, it is not necessary to separately and independently replace the water washing chamber as before. In addition, the total size of the three-bedroom area of the water washing chamber and the direct washing chamber can save space for the entire device, and the manufacturing cost can be reduced as compared with the entire manufacturing cost of the three chambers. In the substrate cleaning processing apparatus according to the third aspect of the invention, the substrate after the chemical solution that has been carried into the water-washing processing chamber is ejected from the slit-shaped ejection opening of the slit nozzle over the entire width direction of the substrate. The water is cleaned, whereby the liquid medicine on the substrate can be efficiently diluted and washed away with clean water. According to the substrate cleaning apparatus of the invention of claim 4, the cleaning liquid is discharged from the plurality of ejection ports of the series high-density fan-shaped nozzle to the main surface of the substrate at a high pressure, thereby reliably blocking the liquid remaining on the substrate. The mixture with clean water flows forward. According to the substrate cleaning apparatus of the invention of claim 5, the cleaning water is atomized by a pressure of a gas such as air from a plurality of discharge ports of the two-fluid spray nozzle, and is discharged to the main surface of the substrate together with the gas. It is possible to surely block the mixture of the liquid and the clean water remaining on the substrate to flow forward. In the substrate cleaning apparatus of the invention of claim 6, the cleaning water is sprayed at a high pressure from the discharge port of the high pressure nozzle to generate water mist of the clean water, but the mist can be prevented from scattering by the mask. In the substrate cleaning processing apparatus according to the invention of claim 7, the water mist of the clean water is sucked and discharged by the mist suction device, thereby preventing the water mist of the clean water containing the chemical liquid from being attached again. On the substrate. In the substrate cleaning and processing device according to the invention of the eighth aspect of the invention, the high-pressure discharge nozzle disposed adjacent to the substrate in the vicinity of one end edge of the substrate to be conveyed is orthogonal to the substrate transport direction. Since at least one high-pressure discharge nozzle is connected to the high-pressure discharge nozzle at a predetermined interval, even a large-sized substrate can surely form a liquid flow flowing toward the other end edge of the substrate. The liquid flow can forcibly discharge the mixture of the chemical liquid and the clean water remaining on the substrate from the substrate. According to the substrate cleaning processing apparatus of the invention of the ninth aspect of the invention, the second and second pressure discharge nozzles are discharged toward the other end edge direction of the substrate in the water washing region or the rear side of the substrate transporting direction. The high pressure/month clean water is formed on the substrate to form a liquid flow flowing toward the other end edge of the substrate. The liquid flow is used to forcibly discharge the residual liquid on the substrate and effectively prevent the substrate from being transported toward the substrate. In the substrate cleaning processing apparatus according to the invention of claim 10, the cleaning water sprayed from the first high pressure discharge nozzle toward the other end edge of the substrate or the rear side of the substrate transport direction is formed toward the other side of the substrate. The liquid flow flowing in the edge direction is forcibly discharged from the substrate by the liquid flow, and the residual liquid on the substrate after the displacement washing process is forcibly discharged from the substrate. After the substrate W is passed through the arrangement position of the i-th high-pressure discharge nozzle, the water of the high-pressure clean water is ejected from the high-pressure nozzle to the upper surface of the substrate and is cleaned by the clean water sprayed from the high-pressure nozzle. Wall clogging 153330.doc -16- 201135819 The residual liquid remaining on the substrate after flowing through the arrangement position of the first high-pressure discharge nozzle flows forward. When the flow of the residual liquid in the forward direction is blocked, the substrate is moved forward. Therefore, the residual liquid on the substrate w is rapidly replaced by the clean water during the period in which the substrate passes through the arrangement of the high pressure nozzle. Then, after the substrate is placed at the position where the high-pressure nozzle is disposed, the discharge port of the second high-pressure discharge nozzle disposed near the one end edge of the substrate W is directed toward the other end edge of the substrate or the rear of the substrate transfer direction. The discharged clean water forms a liquid flow flowing toward the other end edge of the substrate, and the liquid is forcibly discharged from the substrate by the liquid flow, thereby effectively preventing the flow in the forward direction of the substrate transfer. Further, before the substrate is carried out from the water washing region, gas is ejected from the gas nozzle toward the main surface of the substrate, and the adhesion liquid on the substrate is blocked by the pressure of the ejected gas to flow forward in the substrate transport direction, thereby effectively preventing the substrate from being discharged. The adhering liquid is taken out of the water washing area. In the substrate cleaning processing apparatus according to the invention of claim 11, the liquid feeding mechanism is controlled by the control means to start cleaning the first and second high pressure discharge nozzles and the high pressure nozzle before loading the substrate into the water washing area. After the water is discharged from the water-washing area, the discharge of the clean water from the first and second high-pressure discharge nozzles and the high-pressure nozzle is stopped, and the cleaning of the clean water is stopped when the substrate is not loaded into the water washing area. 'Therefore, the amount of clean water used can be reduced. In the substrate cleaning processing apparatus of the inventions of claims 12 and 13, the utilization efficiency of pure water can be improved. In the substrate cleaning processing apparatus according to the invention of claim 14, the substrate transfer direction of the first and second spacer members is selected by the appropriate 153330.doc •17·201135819, and the water washing process can be easily set. The length of the replacement washing zone, the washing zone, and the direct washing zone in the direction in which the substrate is conveyed in the room, and the used clean water from the washing zone and the direct washing zone can be used in the first and second storage sections of the circulating water tank. The recovery amount and concentration are set to the desired values. [Embodiment] Hereinafter, embodiments of the present invention will be described with reference to the drawings. Fig. 1 shows an embodiment of the present invention, which schematically shows a substrate cleaning processing apparatus 200. In addition, the same components or members that are the same as or corresponding to the components and members shown in the drawings are denoted by the same reference numerals in the drawings. The substrate cleaning processing device 200 is disposed in the chemical processing unit. (only a part of the illustration) is composed of a water washing treatment chamber 1A on the subsequent stage side, a circulating water tank 16 and the like, and a drying processing unit (not shown) is provided on the subsequent side of the water washing treatment chamber 10. The water washing treatment chamber 10 sequentially defines the replacement water washing region 201, the water washing region 202, and the direct water washing region 203 in the substrate conveying direction. At a boundary portion between the replacement water washing region 201 and the water washing region 202 and at a boundary portion between the water washing region 202 and the direct water washing region 2〇3, respectively, the width direction of the bottom portion of the water washing processing chamber 10 (in the direction opposite to the substrate transporting direction) The spacers 118 and 120 having a height that does not interfere with the substrate transport path are extended over the entire width. In the replacement water washing area 201, a plurality of conveying rollers (not shown) are disposed on the substrate of the liquid processing chamber 38 by the medicine 153330.doc 201135819 on the liquid processing chamber 38 side. The person σ 12 has been moved to the washing treatment chamber, and the substrate w after the chemical treatment in the under-washing region 201 is tilted in a direction orthogonal to the direction in which the substrate is conveyed (the base (4)
近前側變低）而支持，並於置換水洗區域2〇1内將該基板W 於一方向連續地朝水平方向搬送；及下部喷霧喷嘴20，其 配。又於基板搬送路之下方，以便向於置換水洗區域内 朝水平方向搬送之基板％之下表面噴出清潔水；進而，於 水洗處理室10之置換水洗區域2〇1内之基板搬入口 12附近 配設有入口喷嘴16，於較該入口噴嘴16更靠基板搬送方向 前側配設有高壓喷嘴18，於較該高壓喷嘴18更靠基板搬送 方向前側配設有強制排出噴嘴1〇〇。進而，於較強制排出 喷嘴100更靠基板搬送方向前側且較間隔板118更靠基板搬 送方向後方側，夾持基板搬送路而配設有上下一對空氣噴 嘴22 、 22 。 基板W於置換水洗區域2〇1内不往復移動或暫時停止而 藉由搬送親以例如9 m/min〜20 m/min之高速搬送。又，基 板W係於基板搬送方向上空開例如丨片左右之間隔而依次 被搬入至置換水洗區域201内。於由置換水洗區域2〇1劃定 之水洗處理室10之底部，設置有用以將流下至置換水洗區 域201之内底部之已使用之清潔水排出的排液路24。於置 換水洗區域201中使用後之清潔水會全部透過排液路24而 排出。又’於由置換水洗區域201劃定之水洗處理室1〇之 頂棚部’設置有用以自置換水洗區域201内排出含有清潔 水之水霧之空氣的排氣管90。 153330.doc 19 201135819 入口喷嘴16係由具有沿其長度方向之狹縫狀喷出口之狹 縫喷嘴所構成。該入口喷嘴16係以與基板w之上表面平行 且與基板搬送方向正交之方式而配置，並設置成自鉛垂方 向朝斜前方傾斜。而且，自入口喷嘴16之狹縫狀喷出口， 將清潔水向已搬入至置換水洗區域2〇1内之基板w之上表 面並遍及基板W之整個寬度方向而呈簾狀、且朝相對於其 正下方向而向基板搬送方向之前側傾斜之方向噴出。再 者，亦可取代狹縫噴嘴，使用將許多微小喷出口沿長度方 向設置成一行之噴嘴，自該噴嘴之許多微小喷出口並遍及 基板W之整個寬度方向而噴出清潔水。 作為南壓噴嘴1 8，例如圖2中自基板搬送方向之前側觀 察之模式前視圖所示，使用串聯高密度扇形喷霧噴嘴 18a，其係於相對於基板搬送方向而交叉之方向所配置之 喷霧官92a上，沿其長度方向將複數個喷嘴部94&相互靠近 地設置成一行，並自該各喷嘴部94a之喷出口分別呈扇狀 以高壓喷出清潔水。於該串聯高密度扇形噴霧噴嘴“a之 喷霧管…上，如下料，連料接有H水供給路30, 其中插設有與循環水箱116連通連接之送液泵32。串聯古 密度扇形健噴嘴18a係設置於例如自其噴嘴部％之喷= 至基板W上表面為止之距離成為1〇〜3之高度 位置處’複數個噴嘴部94a係以例如2〇雜〜扇贿之= 而設置。如此之高壓噴嘴18係以與基板W上表面平行、 且相對於基板搬送方向正交之方式而配置，或者相對於與 基板搬送方向正交之' 又之方向而朝斜方向配置（相對於入口噴 153330.doc 201135819 紫16而朝近前側打開之方向傾斜配置）。自該高麼嘴嘴Μ 之喷出口向所搬送之基板貿之上表面，將高壓、例如 MPa麼力之清潔水遍及基板W之整個寬度方向而喷出。 再者Φ可取代串聯高密度扇形喷霧喷嘴而使用& 有相同作用之高壓喷嘴。例如圖3中自基板搬送方向之前 側觀察之模式前視圖所示，可使用2流體喷霧喷嘴⑽，其 係於相對於基板搬送方向而交又之方向所配置之2流體噴 霧集管92b上，/σ其長度方向將複數個2流體喷嘴部Mb相 互罪近地6又置成一行，並自該各2流體喷嘴部9“之喷出口 分別將清潔水利用空氣等氣體之壓力進行水霧化而喷出。 於忒2流體噴霧喷嘴18{?之2流體喷霧集管”^^上，連通連接 有清潔水供給路30，且連通連接有例如與空氣供給源進行 抓路連接之空氣供給路96。2流體喷霧噴嘴i8b係設置於例 如自該2流體噴嘴部9仆之喷出口至基板貿上表面為止之距 離成為10 mm〜100 mm的高度位置處，複數個2流體喷嘴部 94b係以例如20 mm〜1〇〇 mm之間距而設置。 又，於咼壓噴嘴1 8上，亦可附設有用以防止自其喷出口 嘴出之α洛、水之水霧飛散的遮罩2 6。進而，亦可排列設置 有水霧吸引裝置，其使排氣管28連通連接於遮罩％，將清 潔水之水霧透過該排氣管28及遮罩26而真空吸引並排出。 作為強制排出噴嘴1 〇〇，例如圖4及圖5中模式俯視圖及 立體圖所示，其係於所搬送之基板W之一側端緣附近，自 基板起離開接近之距離Η、例如1 〇 mm〜50 mm之距離Η而 設置，並設定成使其噴出口相對於基板搬送方向之直角方 153330.doc •21 · 201135819 向而成銳角’例如為0〜60。、較佳為45。之&电 用度。而且，自 該強制排出喷嘴1 00將高壓、例如〇 5 Μρ • iVI r a、較佳為〇 3 MPa之壓力之清潔水朝基板|之另一側端緣方向或基板搬 送方向後方喷出。 再者，於基板W之財為大型_，亦可取代於所搬送之 基板w之一側端緣附近僅設置〗個該強制排出噴嘴1〇〇之構 成，如圖6中模式俯視圖所示，於相對於基板搬送方向而 正交之方向（基板W之寬度方向）上，隔開特定之間隔而連 設複數個強制排出喷嘴〗〇 〇 (圖6所示之例中為3個）。 下。卩喷霧喷嘴20係沿基板搬送方向且相互平行地分別設 置有複數個，於下部喷霧喷嘴2〇上’將複數個噴出口於基 板搬送方向上設置成一行。自該下部噴霧喷嘴2〇向所搬送 之基板w之下表面噴出清潔水，水洗基板w之下表面側。 於循環水箱116之底部，遍及其寬度方向（關於圖丨之紙 面之直角方向）之整個幅寬而延伸設置有具有特定高度之 間隔板122，藉由該間隔板i 22而將循環水箱i丨6内劃定出 儲留部116a與儲留部116{)之2個儲留部。 於由水洗區域202劃定之水洗處理室]〇之底部，設置有 用以將流下至水洗區域2〇2之内底部之已使用之清潔水排 出的循％排水路64，循環排水路64係連通連接於循環水箱 之儲留部116a。又’於循環水箱ιΐ6之儲留部116&上， 連通連接有與純水（新水）之供給源進行流路連接之純水供 給路68。 於下部噴霧喷嘴20以及入口喷嘴16、高壓喷嘴〗8及強制 153330.doc -22· 201135819 排出噴嘴_上，分別流路連接有與循環水箱ιΐ6之儲留部 心進行料連狀清潔水供給路3G，於清潔水供給路3〇 ^設有㈣泵32。而且’以如下方式構成流路：自循環 水箱m之儲留部116a内透過清潔水供給路％而向入口嗔 嘴16、高壓噴嘴18、強制排出噴嘴⑽及下部噴霧喷嘴2〇 分別供給清潔水。 於藥液處理室38内之人口附近配設有未圖示之基板位置 感測器’藉由該基板位置感測器而檢測基板…之前端位 置，並將檢測信號輸出至控制電路1〇1控制電路1〇8係以 如下方式進行程式控制：自接收到檢測信號之時間點起經 過固定時間後（基板w之前端通過藥液處理室“之出口之 前），驅動送液泵32並開始向各噴嘴16、18、1〇〇、2〇喷出 清潔水。 又，於較強制排出喷嘴100更靠基板搬送方向前側、且 較空氣喷嘴20更靠基板搬送方向後方側’配設有檢測基板 W之後端位置之基板位置感測器104。自基板位置感測器 ⑽輸出之檢測信號被輸入至㈣電路108，並根據該檢測 信號而自控制電路108向送液泵32輸出控制信號，停止向 各喷嘴16、18、100、20喷出清潔水。即’藉由控制電路 108而以如下方式控制送液泵32之送液動作：於向置換水 洗區域201内未搬入基板w之時，自入口噴嘴16、高壓嘴 嘴18、強制排出喷嘴1〇〇及下部喷霧喷嘴2〇不噴出清潔 水’於向置換水洗區域201内即將搬入基板w之前，開始 進行來自各噴嘴16、18、1〇〇、2〇之清潔水之噴出其 153330.doc 23· 201135819 後，直至自置換水洗區域201内搬出基板w為止之期間， 自各噴嘴16、18、100、20繼續噴出清潔水，於自置換水 洗區域201内搬出基板W之後，停止進行來自各喷嘴16、 18、1〇〇、20之清潔水之喷出。 上下一對空氣喷嘴22、22係以與傾斜姿勢之基板w之 上、下表面分別平行、且近前侧向相對於與基板搬送方向 正交之方向而打開之方式傾斜配置。於該空氣喷嘴22上， 連通連接有與空氣供給源進行流路連接之空氣供給管3 4， 自空氣喷嘴22向基板W之上、下兩表面，相對於基板搬送 方向而朝斜反方向或朝正下方向喷出空氣（逆向空氣）。再 者，亦可取代空氣而向基板W之各面噴出其他氣體，例如 氮氣等。 包括上述構成之置換水洗區域2〇1中，於將藥液處理室 38中剛進行藥液處理後之基板w搬入至水洗處理室ι〇之置 換水洗區域2〇1内後，首先，自入口噴嘴16之狹縫狀噴出 口向基板W之上表面遍及其整個寬度方向而呈簾狀喷出清 潔水。如圖7中模式側視圖所示，藉由自該入口噴嘴16呈 簾狀噴出之清潔水A而稀釋基板之藥液，自基板霤上 沖走藥液B之一部分。繼而，自高壓喷嘴丨8之喷出口將高 壓之清潔水向基板W之上表面喷出。如圖7所示，藉由自 該高壓喷嘴1 8喷出之清潔水A所形成之水之壁而堵截通過 入口喷嘴16之配設位置後殘留於基板w上之藥液與清潔水 之混合液C向前方流動。如此於藥液與清潔水之混合液c 向前方之流動受到堵截之狀態下使基板w向前方移動，故 153330.doc -24· 201135819 於基板w通過高壓噴嘴18之配設位置之期間，基板w上之 藥液會被清潔水急速置換。又，於此期間，自下部喷霧喷 嘴2〇之噴出口對基板w之下表面連續喷出清潔水，水洗基 板|之下表面。 如圖8中模式側視圖、圖9中模式俯視圖所示，於通過高 壓喷嘴18之配設位置後之基板|上，殘留有自混合液c漏 出之混合液E(由清潔水A所形成之水之壁無法徹底堵截， 混入有微量藥液成分之混合液）。此處，藉由自配設於基 板W之一側端緣附近之強制排出喷嘴1 〇〇之噴出口朝基板w 之另一側端緣方向或基板搬送方向後方喷出之清潔水A(圖 9中以圖示之細箭形符號表示），形成朝基板w之另一側端 緣方向流動之液流（圖9中以圖示之粗箭形符號表示）。藉由 該液流而將混合液E自基板W上強制性地排出，且有效阻 止向基板搬送方向前方流動。 而且’於自置換水洗區域201内搬出基板W之前，自 上、下一對空氣噴嘴22、22向基板W之上下兩表面分別喷 吹空氣。如圖10中模式側視圖所示，藉由自該一對空氣噴 嘴22' 22向基板W之上下兩表面喷出之空氣D之壓力而堵 截附著於基板W之上、下表面之附著液ρ向基板搬送方向 前方流動’有效阻止藥液附著於基板W上並被帶出至置換 水洗區域201外。 以上一連串之置換水洗處理係以將基板W搬入至置換水 洗區域201内並於置換水洗區域2〇1内朝一方向連續搬送直 至自置換水洗區域201内搬出為止之較短時間、例如〖5秒 153330.doc •25· 201135819 〜20秒之時間而進行。又’藉由自高壓喷嘴18向基板W之 上表面以高壓喷出之清潔水而使基板W上之藥液被清潔水 急速置換，故使用較小量之清潔水便可效率良好地進行水 洗處理。又，藉由自強制排出喷嘴1 〇〇噴出之清潔水所形 成之液流而將基板W上之混合液e自基板w上強制性地排 出，且有效阻止向基板搬送方向前方流動，因此可減少藥 液向置換水洗區域201外之帶出量。進而，於向置換水洗 區域201内未搬入基板W之時停止進行清潔水之喷出，因 此可使清潔水之使用量更少。而且，由於可有效阻止藥液 殘留於基板W上並被帶出至置換水洗區域2〇 1外，故可降 低下述之於水洗區域202内用於進行基板w之水洗後之清 潔水之污染》從而會提高水洗區域202中使用過之清潔水 之循環使用率，由此可進一步節減純水使用量。 再者’於基板搬送方向上’並未依序固定而配設有高壓 喷嘴18、強制排出噴嘴100、及空氣喷嘴22，亦可將該等 喷嘴於基板搬送方向上之配設順序相互調換。 於水洗區域202内設置有：複數個搬送輕（未圖示），其 係將自置換水洗區域201已搬入至水洗區域202内之置換水 洗處理後之基板W ’以相對於水平面朝與基板搬送方向正 交之方向傾斜之姿勢（使基板W之近前側變低）而支持，並 於水洗區域202内將基板W於一方向連續地朝水平方向搬 送；及下部噴霧噴嘴62，其配設於基板搬送路之下方，以 便向於水洗區域202内朝水平方向搬送之基板賣之下表面 喷出清潔水；進而，於較間隔板118側更靠基板搬送方向 153330.doc •26· 201135819 前側之水洗處理室1 0之水洗區域202内，配設有第1個強制 排出喷嘴100 ’於較該強制排出喷嘴100更靠基板搬送方向 前側配設有高壓噴嘴18，於較該高壓喷嘴18更靠基板搬送 方向前側配設有第2個強制排出噴嘴1〇〇。又，於較第2個 強制排出噴嘴100更靠基板搬送方向前側且較間隔板12〇更 Α基板搬送方向後方側’夾持基板搬送路而配設有上下一 對空氣喷嘴22、22 ’於該空氣喷嘴22、22上，連通連接有 與空氣供給源進行流路連接之空氣供給管3 6。 與置換水洗區域201同樣地，2個強制排出喷嘴1〇〇、1〇〇 係於所搬送之基板W之一側端緣附近，自基板起空出接近 之距離Η、例如1〇 mm〜5〇 mm之距離η而設置，並設定成 使其喷出口相對於基板搬送方向之直角方向而成銳角例 如為0〜60。、較佳為45。之角度。而且，自該強制排出噴嘴 100將高壓、例如0.^0.5 MPa、較佳為〇 3 Mpa之壓力之清 潔水朝基板W之另一側端緣方向或基板搬送方向後方噴 出。 配設於該水洗區域2〇2内之高壓噴嘴18、空氣喷嘴Μ、 2 2之各構成係與配設於置換水洗區域2 〇丨内之高壓噴嘴 18二氣喷嘴22、22之各構成為相同，且下部喷霧喷嘴α 之構成亦與配設於置換水洗區域2Q1内之下部喷霧喷嘴Μ 之構成為相同。再者’視情形，亦可代替將空氣喷嘴22設 置成上下—對，省略下噴嘴22而僅設置上噴嘴22。 基板W於水洗區域2Q2内不往復移動或暫 搬送輥以例如9 m/min > 错由 m/min〜20 m/m丨η之南速搬送。又，基板w I53330.doc •27- 201135819 如於基板搬送方向上空開例如丨片左右之間隔而依次被搬 入至水洗區域2〇2内。 於下部喷霧喷嘴62以及強制排出喷嘴1〇〇、1〇〇及高壓喷 嘴18上，分別流路連接有與循環水箱116之儲留部進 行連通連接之清潔水供給路8〇，於清潔水供給路8〇中插設 有送液泵78 ^而且，以如下方式構成流路：自循環水箱 11 6之儲留部116b内透過清潔水供給路80而向高壓喷嘴 18、強制排出喷嘴100、1〇〇及下部喷霧噴嘴以分別供給清 潔水。 又’於由直接水洗區域203劃定之水洗處理室丨〇之底 部，設置有用以將流下至直接水洗區域2〇3之内底部之已 使用之清潔水排出的清潔水供給路72，該清潔水供給路72 係連通連接於循環水箱116之儲留部11此，於儲留部116b 上’連通連接有與純水（新水）之供給源進行流路連接之純 水供給路69。儲留於儲留部丨16b内之清潔水可藉由其液面 上升並自間隔板122之頂部122a溢流而供給至儲留部11 6a 内’可於置換水洗區域2 〇 1内之置換水洗處理中使用。藉 由變更該間隔板122之高度尺寸及/或循環水箱n6之長度 方向之間隔板122之配置位置而可變更自儲留部内向 儲留部116a内溢流之清潔液之量、以及儲留於儲留部丨丨6a 内之清潔液之濃度。 藉由配設於藥液處理室38内之入口附近之未圖示之基板 位置感測器而檢測基板W之前端位置，並將檢測信號輸出 至控制電路108。控制電路1 〇8係以如下方式進行程式控 153330.doc -28- 201135819 制.自接收到檢測信號之時間點起經過固定時間後（基板w 之前端到達水洗區域202内之2個強制排出喷嘴100中的基 板搬送方向後方側之喷嘴100之配設位置之前），驅動送液 系78而開始向各噴嘴18、1〇〇、1〇〇、62喷出清潔水。 又，於較水洗區域202内之2個強制排出喷嘴1 〇〇中之基 板搬送方向前側之喷嘴1〇〇更靠基板搬送方向前側、且較 空氣喷嘴22更靠基板搬送方向後方側，配設有檢測基板w 之後端位置之基板位置感測器丨06。自基板位置感測器丨〇6 輸出之檢測信號被輸入至控制電路丨〇8，並根據該檢測信 號而自控制電路108向送液泵78輸出控制信號，停止向各 喷嘴18、100、1〇〇、62喷出清潔水。即，藉由控制電路 108而以如下方式控制送液泵78之送液動作：於向水洗區 域202内未搬入基板W之時，自高壓噴嘴18、強制排出噴 嘴100、100及下部噴霧喷嘴62不喷出清潔水’於向水洗區 域202内即將搬入基板w之前，開始進行來自各喷嘴喷嘴 18、100、100、62之清潔水之喷出，其後，直至自水洗區 域202内搬出基板W為止之期間，自各喷嘴丨8、1 〇〇、 1 00、62繼續噴出清潔水’於自水洗區域2〇2内搬出基板w 之後，停止進行來自各喷嘴1 8、1 〇〇、1 〇〇、62之清潔水之 喷出。 包括上述構成之水洗區域202中，於將置換水洗區域2〇1 中剛進行置換水洗處理後之基板W搬入至水洗處理室1〇之 水洗區域2 0 2内後’精由自配設於基板w之一側端緣附近 之第1個（基板搬送方向後方側之）強制排出噴嘴100之喷出 153330.doc -29- 201135819 口朝基板w之另一側端緣方向或基板搬送方向後方喷出之 清潔水，形成朝基板w之另一側端緣方向流動之液流。藉 由該液流，將置換水洗區域201中經置換水洗處理後之基 板W上之殘留液自基板上強制性地排出，且有效阻止向基 板搬送方向前方流動。 於使基板W通過第1個強制排出喷嘴J 之配設位置後， 繼而，自高壓喷嘴18之喷出口將高壓之清潔水向基板贾之 上表面喷出。藉由自該高壓噴嘴18喷出之清潔水所形成之 水之壁而堵截通過第強制排出喷嘴1〇〇之配設位置後仍 殘留於基板W上之殘留液向前方流動。如此於殘留液向前 方之流動受到堵截之狀態下使基板w向前方移動，故於基 板w通過高壓喷嘴18之配設位置之期間，基板冒上之殘留 液會被清潔水急速置換。又，於此期間，對基板W之下表 面自下部喷霧噴嘴62之噴出口連續噴出清潔水，水洗基板 W之下表面。 繼而’於基板w通過高壓喷嘴18之配設位置之後，藉由 自配設於基板W之一側端緣附近之第2個（基板搬送方向前 側之）強制排出喷嘴1 〇 〇之噴出口朝基板w之另一側端緣方 向或基板搬送方向後方喷出之清潔水，形成朝基板w之另 一側端緣方向流動之液流。藉由該液流而將殘留液自基板 w上強制性地排出，且有效阻止向基板搬送方向前方流 動0 而且，於自水洗區域202内搬出基板W之前，自上、下 一對空氣喷嘴22、22向基板W之上下兩表面分別喷吹空 153330.doc •30· 201135819 氣。藉由自該一對空氣喷嘴22、22向基板w之上下兩表面 喷出之空氣D之壓力而堵截附著於基板评之上、下表面之 附著液向基板搬送方向前方流動，有效阻止藥液附著於基 板W上並被帶出至水洗區域202外。 以上一連串之水洗處理係以將基板W搬入至水洗區域 202内並於水洗區域2〇2内朝一方向連續搬送直至自水洗區 域202内搬出為止之較短時間、例如15〜30秒之時間而進 打。又’藉由自高壓噴嘴18向基板W之上表面以高壓喷出 之清潔水而使基板评上之殘留液被清潔水急速置換’故使 用較小量之清潔水便可效率良好地進行水洗處理。又，藉 由自強制排出噴嘴1〇〇喷出之清潔水所形成之液流而將基 板W上之殘留液自基板W上強制性地排出，且有效阻止向 基板搬送方向前方流動，因此可減少殘留液向水洗區域 202外之帶出量。進而，於向水洗區域2〇2内未搬入基板w 之時停止進行清潔水之喷出，因此可使清潔水之使用量更 )而且，由於可有效阻止基板W上之殘留液被帶出至水 洗區域202外，故可降低下述之於直接水洗區域203内用於 進行基板W之直接水洗後之清潔水之污染。從而會提高直 接水洗區域203中使用過之清潔水之循環使用率，而且由 此可進一步節減純水使用量。 再者，於基板搬送方向上，亦可取代隔著高壓噴嘴18配 °又2個強制排出噴嘴100，而是不配設高壓噴嘴18，於基板 搬送方向上隔開特定間隔而連設3個以上之強制排出喷嘴 100。 ' 153330.doc -31 · 201135819 於直接水洗區域203内設置有：複數個搬送輥（未圖 不），其係將自水洗區域202已搬入至直接水洗區域2〇3内 之水洗處理後之基板W，以相對於水平面朝與基板搬送方 向正交之方向傾斜之姿勢（使基板w之近前側變低）而支 持，並於直接水洗區域2〇3内將基板w於一方向連續地朝 水平方向搬送；以及上部喷霧喷嘴86及下部喷霧喷嘴88， 其等係向於直接水洗區域2〇3内朝水平方向搬送之基板w 之上、下兩表面分別喷出清潔水。上部喷霧喷嘴86及下部 喷霧喷嘴8 8係沿基板搬送方向且相互平行地設置有複數 個，於各噴霧喷嘴86、88上，將複數個喷出口於基板搬送 方向上設置成一行。於上部噴霧喷嘴86及下部喷霧喷嘴88 上’連通連接有與純水（新水）之供給源進行流路連接之純 水供給路89，於該直接水洗區域2〇3中之水洗處理中，未 使用使已使用之純水循環而得之清潔水。 基板W於直接水洗區域2〇3内不往復移動或暫時停止而 藉由搬送棍以例如9 m/min〜20 m/min之高速搬送。又，基 板W係於基板搬送方向上空開例如1片左右之間隔而依次 被搬入至直接水洗區域2 0 3内。 於直接水洗區域203内結束直接水洗處理之基板w會藉 由搬送輥而通過直接水洗區域203之基板搬出口後被搬輸 送至設置於直接水洗區域2 0 3之後段側之乾燥處理部（未圖 示），進行乾燥處理。 包括上述構成之基板清潔處理裝置中，藉由以間隔板 118及120劃定出置換水洗區域201、水洗區域202及直接水 153330.doc -32- 201135819 洗區域2〇3之單體之水洗處理室10而完成藥液處理後之基 板之水洗處理，故不必如先前般需要個別•獨立之置換水 洗室、水洗室及直接水洗室之合適的3室大小之占地面 積，從而可謀求裝置整體之省空間化，進而與3室之整個 製造成本相比，可達成製造成本之降低化。 再者’藉由適當選擇間隔板118及120於水洗處理室1〇内 之基板搬送方向之設置位置，可將水洗處理室1〇内之基板 搬送方向之置換水洗區域201、水洗區域2〇2及直接水洗區 域203之長度尺寸分別簡易設定為所需之尺寸，且可將來 自水洗區域202及直接水洗區域203之已使用之清潔水向循 環水箱116之儲留部116a及116b中之回收量及濃度設定為 所需之值。 又’於上述實施形態中，將基板W以傾斜姿勢支持並於 置換水洗區域201、水洗區域202、直接水洗區域2〇3之各 £域内朝水平方向搬送基板W’但亦可將基板以水平姿勢 支持並進行搬送。 再者’本發明係可廣泛應用於進行除抗蝕劑剝離處理或 钱刻處理之外之各種藥液處理後之基板之水洗處理。 【圖式簡單說明】 圖1表示本發明之實施形態之一例，其係模式性表示基 板清潔處理裝置之概略構成圖。 圖2係表示高壓噴嘴之一例之圖，其係自基板搬送方向 之前側觀察串聯高密度扇形喷霧喷嘴之模式前視圖。 圖3係表示高壓喷嘴之一例之圖，其係自基板搬送方向 153330.doc •33- 201135819 之前側觀察2流體喷霧喷嘴之模式前視圖。 圖4係強制排出喷嘴之模式俯視圖。 圖5係強制排出噴嘴之模式立體圖。 圖6係表示連設於基板之寬度方向上之複數個強制排出 喷嘴之模式俯視圖。 圖7係表示置換水洗區域之處理狀況之模式側視圖。 圖8係表示置換水洗區域之處理狀況之模式側視圖。 圖9係表示置換水洗區域之處理狀況之模式側視圖。 圖1 〇係表示置換水洗區域之處理狀況之模式側視圖。 圖11係模式性表示先前之基板清潔處理裝置之構成例之 概略構成圖。 【主要元件符號說明】 1 藥液處理部 3 第2水洗部 4 直接水洗部 5 置換水洗部（第1水洗部） 10 水洗處理室 12 基板搬入口 16 入口噴嘴 18 高壓喷嘴 18a 串聯高密度扇形噴霧嘴嘴 18b 2流體噴霧喷嘴 20 、 50 、 62 、 88 下部噴霧喷嘴 22 空氣喷嘴 153330.doc -34- 201135819 24 ' 52 排液路 26 遮罩 28 排氣管 30 、 72 ' 80 清潔水供給路 32、78 送液泵 34、36 空氣供給管 38 藥液處理室 40 置換水洗室（第1水洗室） 42、56 基板搬入口 44、58 基板搬出口 46 入口狹縫喷嘴 48 、 60 、 86 上部喷霧噴嘴 54 第2水洗室 64 循環排水路 66 ' 116 循環水箱 68 、 69 、 89 純水供給路 70 直接水洗室 74 送液泵 76 清潔水供給路 82 排水路 84 三方切換閥 90 排氣管 92a 喷霧管 92b 2流體喷霧集管 153330.doc ·35· 201135819Supported by the front side is lowered, and the substrate W is continuously conveyed in the horizontal direction in one direction in the replacement water washing area 2〇1; and the lower spray nozzle 20 is provided. Further, below the substrate transfer path, the clean water is sprayed onto the lower surface of the substrate 100% conveyed in the horizontal direction in the replacement water washing region; and further, near the substrate transfer inlet 12 in the replacement water washing region 2〇1 of the water washing treatment chamber 10. The inlet nozzle 16 is disposed, and a high pressure nozzle 18 is disposed on the front side of the inlet nozzle 16 in the substrate transport direction, and a forced discharge nozzle 1 is disposed on the front side in the substrate transport direction from the high pressure nozzle 18. Further, the upper and lower pair of air nozzles 22 and 22 are disposed to sandwich the substrate transport path from the front side in the substrate transport direction and the rear side of the partition plate 118 in the substrate transport direction. The substrate W is not reciprocated or temporarily stopped in the replacement water washing region 2〇1, and is transported at a high speed of, for example, 9 m/min to 20 m/min by the conveyance. Further, the substrate W is sequentially carried into the replacement water washing region 201 at intervals of, for example, the left and right sides of the cymbal in the substrate transport direction. At the bottom of the water washing treatment chamber 10 defined by the replacement water washing zone 2, a draining passage 24 for discharging the used clean water flowing down to the bottom of the replacement water washing zone 201 is provided. The clean water used in the replacement water washing zone 201 is completely discharged through the draining path 24. Further, an exhaust pipe 90 for discharging the air containing the water mist of the clean water from the replacement water washing region 201 is provided in the ceiling portion of the water washing treatment chamber 1A defined by the replacement water washing region 201. 153330.doc 19 201135819 The inlet nozzle 16 is formed by a slit nozzle having a slit-like discharge port along its length. The inlet nozzle 16 is disposed so as to be parallel to the upper surface of the substrate w and orthogonal to the substrate conveyance direction, and is provided to be inclined obliquely forward from the vertical direction. Further, from the slit-shaped discharge port of the inlet nozzle 16, the cleaning water is carried into the upper surface of the substrate w which has been transferred into the replacement water washing area 2〇1, and is curtain-shaped over the entire width direction of the substrate W, and is opposed to It is ejected in the direction in which the front side is inclined in the direction in which the substrate is conveyed in the downward direction. Further, instead of the slit nozzle, a nozzle in which a plurality of minute ejection ports are arranged in a row in the longitudinal direction may be used, and the cleaning water may be ejected from a plurality of minute ejection ports of the nozzle and over the entire width direction of the substrate W. As the south pressure nozzle 18, as shown in the front view of the front side in the substrate transport direction in FIG. 2, for example, a series high-density fan-shaped spray nozzle 18a is used, which is disposed in a direction intersecting with respect to the substrate transport direction. On the sprayer 92a, a plurality of nozzle portions 94 & are disposed in a row along the longitudinal direction thereof, and the cleaning water is ejected at a high pressure from the discharge ports of the respective nozzle portions 94a. In the spray tube of the series high-density fan-shaped spray nozzle "a, the following material is connected to the H water supply path 30, and the liquid supply pump 32 connected to the circulating water tank 116 is inserted therein. The health nozzles 18a are provided, for example, at a height position from the nozzle portion % of the nozzle portion to the upper surface of the substrate W at a height of 1 〇 3 to 3, and the plurality of nozzle portions 94a are, for example, 2 〜 扇 扇 扇 而The high-pressure nozzle 18 is disposed so as to be parallel to the upper surface of the substrate W and orthogonal to the substrate transfer direction, or to be disposed obliquely with respect to the direction orthogonal to the substrate transfer direction (relative to At the entrance of the 153330.doc 201135819 purple 16 and tilted towards the front side of the open direction). From the high mouth of the nozzle mouth to the surface of the substrate to be transported, high pressure, such as MPa force clean water The Φ is sprayed over the entire width direction of the substrate W. Further, Φ can be used in place of the series high-density fan-shaped spray nozzle, and the high-pressure nozzle having the same function can be used. For example, the mode front view of the front side of the substrate transport direction is shown in FIG. It is to be noted that a two-fluid spray nozzle (10) can be used, which is disposed on the two-fluid spray header 92b disposed in the direction opposite to the direction in which the substrate is conveyed, and /σ has a plurality of two-fluid nozzle portions Mb in the longitudinal direction thereof. The near ground 6 is further placed in a row, and the clean water is sprayed by the pressure of the gas such as air from the discharge ports of the respective two fluid nozzle portions 9 to be ejected. The cleaning water supply path 30 is connected to the second fluid spray nozzle 18, and is connected to, for example, an air supply path 96 that is connected to the air supply source. The fluid spray nozzle i8b is disposed at a height position of, for example, 10 mm to 100 mm from the discharge port of the 2 fluid nozzle unit 9 to the substrate upper surface, and the plurality of 2 fluid nozzle portions 94b are, for example, 20 Further, it is provided at a distance of mm to 1 mm. Further, a mask 26 for preventing the water mist of the water and the water from scattering from the nozzle of the discharge port may be attached to the pressure nozzle 18. A water mist suction device may be arranged, which connects the exhaust pipe 28 to the cover %, and the water mist of the clean water is vacuum-sucked and discharged through the exhaust pipe 28 and the shield 26 as the forced discharge nozzle 1 For example, as shown in the schematic top view and the perspective view of FIG. 4 and FIG. 5, it is located near the edge of one side of the substrate W to be conveyed, and is separated from the substrate by a distance Η, for example, a distance of 1 〇 mm to 50 mm. Set up and set so that its ejection port is transported relative to the substrate The right angle of the direction 153330.doc • 21 · 201135819 The sharp angle 'for example is 0~60., preferably 45. & electricity. And, from the forced discharge nozzle 100 will be high pressure, for example 〇5 Μρ • iVI ra, preferably 〇3 MPa, the pressure of the clean water is sprayed toward the other side edge of the substrate| or the rear side of the substrate transport direction. Furthermore, the wealth of the substrate W is large _, which can also be replaced by Only one of the forced discharge nozzles 1 is disposed in the vicinity of one end edge of the substrate w to be transported, and is orthogonal to the substrate transport direction as shown in the schematic plan view of FIG. 6 (the width of the substrate W) In the direction), a plurality of forced discharge nozzles are arranged at a predetermined interval (three in the example shown in Fig. 6). The spray nozzles 20 are arranged in parallel with each other in the substrate transport direction. A plurality of nozzles are disposed on the lower spray nozzle 2'. The plurality of discharge ports are arranged in a row in the substrate transport direction. From the lower spray nozzle 2, cleaning water is sprayed onto the lower surface of the substrate w to be transported, and the substrate is washed. w under the surface side. At the bottom of the 116, a partition 122 having a specific height is extended over the entire width of the width direction (the direction perpendicular to the plane of the paper), and the circulating water tank i丨6 is drawn by the partition plate i 22 Two storage portions of the storage portion 116a and the storage portion 116{) are defined. At the bottom of the water treatment processing chamber defined by the water washing region 202, a bottom portion is provided to flow down to the bottom of the water washing region 2〇2 The circulating drainage channel 64 is connected to the storage portion 116a of the circulating water tank, and is connected to the storage portion 116& of the circulating water tank ΐ6, and is connected to the pure water. The supply source of (new water) is a pure water supply path 68 to which a flow path is connected. In the lower spray nozzle 20 and the inlet nozzle 16, the high pressure nozzle 8 and the forced 153330.doc -22· 201135819 discharge nozzle _, the flow path is connected to the storage portion of the circulating water tank ι 6 to feed the clean water supply path 3G, (4) pump 32 is provided on the clean water supply road 3〇. Further, the flow path is configured to supply clean water to the inlet nozzle 16, the high pressure nozzle 18, the forced discharge nozzle (10), and the lower spray nozzle 2, respectively, through the clean water supply path % from the storage portion 116a of the circulating water tank m. . A substrate position sensor (not shown) is disposed in the vicinity of the population in the chemical processing chamber 38. The front end position of the substrate is detected by the substrate position sensor, and the detection signal is output to the control circuit 1〇1. The control circuit 1 is controlled by the following method: after a fixed time has elapsed since the time when the detection signal was received (before the front end of the substrate w passes through the outlet of the chemical processing chamber), the liquid supply pump 32 is driven and starts to The cleaning water is ejected from each of the nozzles 16, 18, 1 and 2, and the detection substrate is disposed on the front side in the substrate transport direction from the forced discharge nozzle 100 and on the rear side in the substrate transport direction from the air nozzle 20. The substrate position sensor 104 at the rear end position of W. The detection signal outputted from the substrate position sensor (10) is input to the (four) circuit 108, and a control signal is output from the control circuit 108 to the liquid supply pump 32 according to the detection signal, and stops. The cleaning water is ejected to each of the nozzles 16, 18, 100, and 20. That is, the liquid supply operation of the liquid supply pump 32 is controlled by the control circuit 108 in such a manner that when the substrate w is not loaded into the replacement water washing area 201, The inlet nozzle 16 , the high pressure nozzle 18 , the forced discharge nozzle 1 〇〇 and the lower spray nozzle 2 〇 do not discharge the cleaning water ′ before the substrate w is loaded into the replacement water washing region 201 , and the nozzles 16 and 18 are started. After 153330.doc 23·201135819 is ejected from the clean water of 1〇〇 and 2〇, the cleaning water is continuously ejected from each of the nozzles 16, 18, 100, and 20 until the substrate w is carried out from the replacement washing zone 201. After the substrate W is carried out in the replacement water washing region 201, the discharge of the clean water from the nozzles 16, 18, 1 and 20 is stopped. The upper and lower air nozzles 22 and 22 are placed on the substrate w in an inclined posture. The lower surfaces are respectively parallel and the front side is inclined so as to open in a direction orthogonal to the substrate conveying direction. The air nozzle 22 is connected to the air supply pipe 34 that is connected to the air supply source. The air nozzle 22 ejects air (reverse air) in an obliquely opposite direction or in a downward direction with respect to the substrate transport direction from the air nozzle 22 to the upper and lower surfaces of the substrate W. Further, instead of air, The other surface of the board W is ejected with another gas, for example, nitrogen gas, etc. In the replacement water washing zone 2〇1 having the above-described configuration, the substrate w immediately after the chemical liquid treatment in the chemical processing chamber 38 is carried into the water washing chamber ι After replacing the inside of the water washing zone 2〇1, first, the clean water is sprayed from the slit-shaped discharge port of the inlet nozzle 16 toward the upper surface of the substrate W in the entire width direction, as shown in the schematic side view of Fig. 7. The liquid medicine of the substrate is diluted by the cleaning water A sprayed from the inlet nozzle 16 in a curtain shape, and a part of the liquid medicine B is washed away from the substrate. Then, the high-pressure clean water is discharged from the discharge port of the high pressure nozzle 丨8. The upper surface of the substrate W is ejected. As shown in Fig. 7, the wall of the water formed by the cleaning water A ejected from the high-pressure nozzle 18 is blocked by the arrangement position of the inlet nozzle 16 and remains on the substrate w. The mixture C of the above liquid and the clean water flows forward. In this state, the substrate w is moved forward in a state where the flow of the mixed liquid c of the chemical solution and the clean water is blocked, so that the substrate is placed at a position where the substrate w passes through the high-pressure nozzle 18, and the substrate is 153330.doc -24·201135819 The liquid on w will be quickly replaced by clean water. Further, during this period, the cleaning water is continuously sprayed from the discharge port of the lower spray nozzle 2 to the lower surface of the substrate w, and the lower surface of the substrate is washed. As shown in the schematic side view of FIG. 8 and the top plan view of FIG. 9, the mixed liquid E (contaminated by the clean water A) remaining from the mixed liquid c remains on the substrate|seat passing through the arrangement position of the high-pressure nozzle 18. The wall of water cannot be completely blocked, and a mixture of trace chemicals is mixed. Here, the cleaning water A is ejected toward the other end edge of the substrate w or the rear side in the substrate transport direction by the discharge port of the forced discharge nozzle 1 配 disposed near the one end edge of the substrate W (Fig. 9 is indicated by a thin arrow symbol in the figure), and a liquid flow flowing in the direction of the other end edge of the substrate w is formed (indicated by a thick arrow symbol in FIG. 9). The liquid E is forcibly discharged from the substrate W by the liquid flow, and the flow in the forward direction of the substrate transfer is effectively prevented. Further, before the substrate W is carried out from the replacement water washing region 201, air is blown from the upper and lower pair of air nozzles 22 and 22 to the upper and lower surfaces of the substrate W, respectively. As shown in the mode side view of FIG. 10, the adhesion liquid adhering to the upper surface and the lower surface of the substrate W is blocked by the pressure of the air D ejected from the upper and lower surfaces of the substrate W from the pair of air nozzles 22'22. Flowing in front of the substrate transport direction 'effectively prevents the chemical solution from adhering to the substrate W and being carried out to the outside of the replacement water washing region 201. In the above-described series of replacement washing processes, the substrate W is carried into the replacement washing zone 201 and continuously conveyed in one direction in the replacement washing zone 2〇1 until it is carried out from the replacement washing zone 201, for example, 5 seconds 153330 .doc •25· 201135819 ~20 seconds to proceed. Further, the cleaning liquid sprayed on the upper surface of the substrate W from the high pressure nozzle 18 causes the chemical liquid on the substrate W to be rapidly replaced by the cleaning water, so that the washing can be efficiently performed using a small amount of the clean water. deal with. Moreover, the liquid e formed by the cleaned water discharged from the forced discharge nozzle 1 is forcibly discharged from the substrate w from the substrate w, and is effectively prevented from flowing forward in the substrate transfer direction. The amount of the drug solution to the outside of the replacement water washing zone 201 is reduced. Further, when the substrate W is not loaded into the replacement water washing region 201, the discharge of the cleaning water is stopped, so that the amount of the cleaning water used can be made smaller. Moreover, since the chemical liquid can be effectively prevented from remaining on the substrate W and carried out to the replacement water washing area 2〇1, the following cleaning of the clean water for washing the substrate w in the water washing area 202 can be reduced. Thus, the recycling rate of the clean water used in the water washing zone 202 is increased, thereby further reducing the amount of pure water used. Further, the high pressure nozzle 18, the forced discharge nozzle 100, and the air nozzle 22 are disposed so as not to be sequentially fixed in the substrate conveyance direction, and the arrangement order of the nozzles in the substrate conveyance direction may be interchanged. In the water washing area 202, a plurality of conveying lights (not shown) are provided, and the substrate W' after the replacement water washing process has been carried into the water washing area 202 from the replacement water washing area 202 is directed to the substrate with respect to the horizontal plane. The posture in which the direction of the conveyance is orthogonal to the direction (the front side of the substrate W is lowered) is supported, and the substrate W is continuously conveyed in the horizontal direction in the horizontal direction in the water washing region 202; and the lower spray nozzle 62 is disposed. Below the substrate transfer path, the clean water is sprayed onto the surface of the substrate sold in the horizontal direction in the water-washing region 202; further, the substrate transport direction is 153330.doc •26·201135819 on the side of the partition plate 118. The first forced discharge nozzle 100' is disposed in the water washing area 202 of the water washing treatment chamber 10, and the high pressure nozzle 18 is disposed on the front side of the forced discharge nozzle 100 in the substrate transport direction, and is further disposed above the high pressure nozzle 18 A second forced discharge nozzle 1 is disposed on the front side in the substrate transfer direction. In addition, the upper and lower pair of air nozzles 22 and 22' are disposed on the front side of the second forced discharge nozzle 100 in the substrate transport direction and the rear side of the partition plate 12A in the substrate transport direction. An air supply pipe 36 connected to the air supply source is connected in communication with the air nozzles 22 and 22. In the same manner as the replacement water washing zone 201, the two forced discharge nozzles 1 and 1 are attached to the vicinity of one end edge of the substrate W to be conveyed, and a distance Η, for example, 1 mm to 5 is vacated from the substrate. The distance η is set to be η mm, and is set such that the discharge port has an acute angle with respect to the direction perpendicular to the substrate conveyance direction, for example, 0 to 60. Preferably, it is 45. The angle. Further, the forced discharge nozzle 100 ejects a high-pressure, for example, a pressure of 0.^0.5 MPa, preferably 〇3 Mpa, toward the other end edge of the substrate W or the rear side in the substrate transport direction. Each of the high-pressure nozzles 18, the air nozzles 224, and the respective components of the high-pressure nozzles 18 and the second nozzles 22 and 22 disposed in the replacement water-washing region 2 are configured as Similarly, the configuration of the lower spray nozzle α is also the same as the configuration of the lower spray nozzle 配 disposed in the replacement water washing region 2Q1. Further, as the case may be, instead of setting the air nozzles 22 up and down, the lower nozzles 22 may be omitted and only the upper nozzles 22 may be provided. The substrate W is not reciprocated in the water washing region 2Q2 or the temporary transfer roller is transported at a south speed of, for example, 9 m/min > m/min to 20 m/m 丨η. Further, the substrate w I53330.doc • 27-201135819 is sequentially moved into the water washing area 2〇2 in the substrate transport direction, for example, at intervals of left and right sides of the cymbal. The lower spray nozzle 62 and the forced discharge nozzles 1 and 1 and the high pressure nozzle 18 are connected to a clean water supply passage 8 that is connected to the storage portion of the circulating water tank 116, respectively, in the flow path. A liquid supply pump 78 is inserted into the supply path 8 and a flow path is formed as follows: the inside of the storage portion 116b of the circulating water tank 161 passes through the clean water supply path 80, and is directed to the high pressure nozzle 18, the forced discharge nozzle 100, 1〇〇 and the lower spray nozzle to supply clean water separately. Further, at the bottom of the washing treatment chamber 划 defined by the direct water washing zone 203, a clean water supply path 72 for discharging the used clean water flowing down to the bottom of the direct water washing zone 2〇3 is provided, which is cleaned. The water supply path 72 is connected to the storage portion 11 connected to the circulating water tank 116. The pure water supply path 69 connected to the supply source of the pure water (new water) is connected to the storage portion 116b. The clean water stored in the reservoir portion 16b can be supplied to the storage portion 11 6a by the liquid level rising and overflowing from the top portion 122a of the partition plate 122, and can be replaced in the replacement water washing region 2 〇1. Used in washing treatment. By changing the height dimension of the partition plate 122 and/or the arrangement position of the partition plate 122 between the longitudinal direction of the circulating water tank n6, the amount of the cleaning liquid overflowing from the inside of the storage portion to the storage portion 116a can be changed, and the storage can be changed. The concentration of the cleaning liquid in the reservoir 丨丨6a. The position of the front end of the substrate W is detected by a substrate position sensor (not shown) disposed near the inlet in the chemical processing chamber 38, and the detection signal is output to the control circuit 108. The control circuit 1 〇8 is programmed in the following manner: 153330.doc -28-201135819. After a fixed time from the time when the detection signal is received (the front end of the substrate w reaches the two forced discharge nozzles in the water washing area 202) The liquid supply system 78 is driven to start the discharge of the cleaning water to the respective nozzles 18, 1A, 1B, and 62 before the position of the nozzle 100 on the rear side in the substrate transfer direction. Further, the nozzles 1〇〇 on the front side in the substrate transfer direction of the two forced discharge nozzles 1 in the water-washing region 202 are disposed closer to the front side in the substrate transfer direction and to the rear side in the substrate transfer direction than the air nozzles 22, and are disposed. There is a substrate position sensor 丨06 for detecting the position of the rear end of the substrate w. The detection signal outputted from the substrate position sensor 丨〇6 is input to the control circuit 丨〇8, and a control signal is output from the control circuit 108 to the liquid supply pump 78 based on the detection signal, and the nozzles 18, 100, and 1 are stopped. 〇〇, 62 spray clean water. That is, the liquid supply operation of the liquid supply pump 78 is controlled by the control circuit 108 in such a manner that the high pressure nozzle 18, the forced discharge nozzles 100, 100, and the lower spray nozzle 62 are not loaded into the water washing area 202 when the substrate W is not loaded. The cleaning water is not discharged, and the cleaning water from the nozzle nozzles 18, 100, 100, and 62 is started before the substrate w is moved into the water washing region 202, and thereafter, the substrate W is unloaded from the water washing region 202. In the meantime, the cleaning water is continuously ejected from each of the nozzles 、8, 1 〇〇, 100, and 62. After the substrate w is carried out from the water washing zone 2〇2, the nozzles 18, 1 〇〇, 1 停止 are stopped. 62, the clean water is sprayed out. In the water washing region 202 including the above-described configuration, after the substrate W immediately after the replacement water washing treatment in the replacement water washing region 2〇1 is carried into the water washing region 2 0 2 of the water washing processing chamber 1〇, the fine self-distribution is provided on the substrate. The first one in the vicinity of one side edge (the rear side in the substrate transport direction) is forced to discharge the nozzle 100. 153330.doc -29- 201135819 The nozzle is sprayed toward the other end edge of the substrate w or the substrate transport direction The clean water is formed to form a liquid flow flowing toward the other end edge of the substrate w. By this liquid flow, the residual liquid on the substrate W subjected to the replacement water washing treatment in the replacement water washing zone 201 is forcibly discharged from the substrate, and the flow in the forward direction of the substrate conveyance is effectively prevented. After the substrate W is passed through the arrangement position of the first forced discharge nozzle J, high-pressure clean water is discharged from the discharge port of the high-pressure nozzle 18 to the upper surface of the substrate. The residual liquid remaining on the substrate W after being blocked by the arrangement position of the forced discharge nozzle 1 is blocked by the wall of the water formed by the clean water sprayed from the high pressure nozzle 18. When the flow of the residual liquid to the front is blocked, the substrate w is moved forward. Therefore, while the substrate w is placed at the position where the high-pressure nozzle 18 is disposed, the residual liquid that has fallen from the substrate is rapidly replaced by the clean water. Further, during this period, the surface of the lower surface of the substrate W is continuously discharged from the discharge port of the lower spray nozzle 62, and the lower surface of the substrate W is washed. Then, after the substrate w is placed at the position where the high-pressure nozzle 18 is disposed, the second discharge port (the front side in the substrate transfer direction) is forced to discharge the nozzle 1 喷 from the discharge port disposed near the one end edge of the substrate W. The clean water sprayed from the other end edge direction of the substrate w or the rear side in the substrate transport direction forms a liquid flow flowing toward the other end edge of the substrate w. By the liquid flow, the residual liquid is forcibly discharged from the substrate w, and the flow in the front direction of the substrate transporting direction is effectively prevented. 0. Before the substrate W is carried out from the water washing region 202, the pair of upper and lower air nozzles 22 are moved. 22, air 153330.doc • 30·201135819 gas is sprayed onto the upper and lower surfaces of the substrate W, respectively. By the pressure of the air D ejected from the pair of air nozzles 22 and 22 to the upper and lower surfaces of the substrate w, the adhesion liquid adhering to the upper surface and the lower surface of the substrate is blocked from flowing toward the substrate transport direction, thereby effectively preventing the liquid medicine. It is attached to the substrate W and taken out of the water washing area 202. The above-described series of water washing processes are carried out by loading the substrate W into the water washing region 202 and continuously transporting it in one direction in the water washing region 2〇2 until it is carried out from the water washing region 202 for a short period of time, for example, 15 to 30 seconds. hit. Further, 'the residual liquid which is evaluated on the substrate by the high-pressure nozzle 18 to the upper surface of the substrate W at a high pressure is rapidly replaced by the clean water, so that the washing can be performed efficiently with a small amount of the clean water. deal with. Moreover, the residual liquid on the substrate W is forcibly discharged from the substrate W by the liquid flow formed by the clean water sprayed from the forced discharge nozzle 1〇〇, and the flow in the forward direction of the substrate transport is effectively prevented. The amount of residual liquid to the outside of the water washing zone 202 is reduced. Further, when the substrate w is not loaded into the water washing region 2〇2, the discharge of the cleaning water is stopped, so that the amount of the cleaning water can be used more, and the residual liquid on the substrate W can be effectively prevented from being carried out to The outside of the water washing zone 202 can reduce the contamination of the clean water after the direct water washing of the substrate W in the direct water washing zone 203 described below. Thereby, the recycling rate of the clean water used in the direct water washing zone 203 is increased, and the amount of pure water used can be further reduced. Further, in the substrate transfer direction, instead of the two high-pressure nozzles 18, the two high-pressure nozzles 18 may be disposed, and the high-pressure nozzles 18 may be omitted, and three or more of the high-pressure nozzles 18 may be arranged at a predetermined interval in the substrate transfer direction. The nozzle 100 is forcibly discharged. 153330.doc -31 · 201135819 In the direct water washing zone 203, a plurality of conveying rollers (not shown) are provided, which are carried out from the water washing zone 202 to the water-washed substrate in the direct water washing zone 2〇3. W is supported in a posture inclined with respect to the horizontal plane in a direction orthogonal to the substrate conveyance direction (the front side of the substrate w is lowered), and the substrate w is continuously directed in one direction in the direct water washing region 2〇3. The upper side spray nozzle 86 and the lower spray nozzle 88 are configured to discharge clean water onto the upper and lower surfaces of the substrate w that is transported in the horizontal direction in the direct water washing area 2〇3. The upper spray nozzle 86 and the lower spray nozzle 8 are provided in parallel with each other in the substrate transport direction, and a plurality of discharge ports are provided in a row in the substrate transport direction in each of the spray nozzles 86 and 88. A pure water supply path 89 connected to a supply path of pure water (new water) is connected to the upper spray nozzle 86 and the lower spray nozzle 88 in the water washing process in the direct water washing zone 2〇3. Clean water obtained by circulating pure water already used is not used. The substrate W is not reciprocated or temporarily stopped in the direct water washing area 2〇3, and is transported at a high speed of, for example, 9 m/min to 20 m/min by the transporting stick. Further, the substrate W is sequentially carried into the direct water washing region 203 in the space in which the substrate is conveyed, for example, at intervals of about one piece. The substrate w which has been subjected to the direct water washing treatment in the direct water washing zone 203 is transported to the substrate of the direct water washing zone 203 by the transfer roller, and then transported to the drying processing section provided on the downstream side of the direct water washing zone 2 0 3 (not As shown in the figure), it is dried. In the substrate cleaning processing apparatus including the above configuration, the water washing treatment of the replacement water washing area 201, the water washing area 202, and the direct water 153330.doc -32-201135819 washing area 2〇3 is defined by the partition plates 118 and 120. After the liquid crystal treatment of the substrate after the chemical liquid treatment is completed in the chamber 10, it is not necessary to separately and independently replace the appropriate three-bedroom size of the water washing chamber, the water washing chamber and the direct water washing chamber, thereby realizing the entire apparatus. The space saving is achieved, and the manufacturing cost can be reduced as compared with the entire manufacturing cost of the three rooms. Further, by appropriately selecting the positions at which the spacers 118 and 120 are disposed in the substrate transport direction in the water-washing chamber 1A, the water-washing region 201 and the water-washing region 2〇2 in the substrate transport direction in the water-washing chamber 1 can be replaced. And the length dimension of the direct water washing zone 203 is simply set to a desired size, and the amount of used clean water from the water washing zone 202 and the direct water washing zone 203 can be recovered into the storage portions 116a and 116b of the circulating water tank 116. And the concentration is set to the desired value. Further, in the above embodiment, the substrate W is supported in an inclined posture and the substrate W' is transported in the horizontal direction in each of the replacement water washing region 201, the water washing region 202, and the direct water washing region 2〇3, but the substrate may be horizontally The posture is supported and carried. Further, the present invention can be widely applied to a water washing treatment of a substrate after various chemical liquid treatments other than a resist stripping treatment or a money etching treatment. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing an outline of an embodiment of the present invention, which schematically shows a schematic configuration of a substrate cleaning processing apparatus. Fig. 2 is a view showing an example of a high-pressure nozzle which is a front view of a mode in which a series high-density fan-shaped spray nozzle is viewed from the front side in the substrate conveyance direction. Fig. 3 is a view showing an example of a high pressure nozzle which is a front view of the mode of the 2 fluid spray nozzle viewed from the front side of the substrate conveyance direction 153330.doc • 33 - 201135819. Figure 4 is a schematic plan view of the forced discharge nozzle. Figure 5 is a schematic perspective view of a forced discharge nozzle. Fig. 6 is a schematic plan view showing a plurality of forced discharge nozzles connected in the width direction of the substrate. Fig. 7 is a schematic side view showing the state of treatment of the replacement water washing zone. Fig. 8 is a schematic side view showing the state of treatment of the replacement water washing zone. Fig. 9 is a schematic side view showing the state of treatment of the replacement water washing zone. Fig. 1 is a schematic side view showing the state of treatment of the replacement water washing zone. Fig. 11 is a schematic block diagram showing a configuration example of a conventional substrate cleaning processing apparatus. [Description of main component symbols] 1 Chemical liquid processing unit 3 Second water washing unit 4 Direct water washing unit 5 Replacement water washing unit (first water washing unit) 10 Water washing chamber 12 Base material inlet 16 Inlet nozzle 18 High pressure nozzle 18a High-density fan spray in series Mouthpiece 18b 2 Fluid spray nozzle 20, 50, 62, 88 Lower spray nozzle 22 Air nozzle 153330.doc -34- 201135819 24 '52 Drain road 26 Mask 28 Exhaust pipe 30, 72 ' 80 Clean water supply path 32 78, liquid supply pump 34, 36 air supply pipe 38 chemical liquid processing chamber 40 replacement water washing chamber (first water washing chamber) 42, 56 substrate carrying inlet 44, 58 substrate carrying port 46 inlet slit nozzle 48, 60, 86 upper spray Fog nozzle 54 second water washing chamber 64 circulating water drain 66 '116 circulating water tank 68, 69, 89 pure water supply path 70 direct washing room 74 liquid feeding pump 76 clean water supply path 82 draining road 84 three-way switching valve 90 exhaust pipe 92a Spray tube 92b 2 fluid spray header 153330.doc ·35· 201135819
94a 94b 96 100 104 、 106 108 116a、 116b 118 、 120 、 122 122a 200 ' 300 201 202 203 A B C D E F H W 噴嘴部 2流體喷嘴部 空氣供給路 強制排出喷嘴 基板位置感測器 控制電路 儲留部 間隔板 頂部 基板清潔處理裝置 置換水洗區域 水洗區域 直接水洗區域 清潔水 藥液 混合液 空氣 混合液 附著液 距離 基板 153330.doc -36-94a 94b 96 100 104 , 106 108 116a , 116b 118 , 120 , 122 122a 200 ' 300 201 202 203 ABCDEFHW Nozzle section 2 Fluid nozzle section Air supply path Forced discharge nozzle substrate Position sensor Control circuit Storage section Spacer top substrate Cleaning treatment device replacement water washing area washing area direct washing area cleaning water liquid chemical mixture liquid mixed liquid adhering liquid distance substrate 153330.doc -36-