TW200901303A - Substrate processing apparatus - Google Patents

Substrate processing apparatus Download PDF

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Publication number
TW200901303A
TW200901303A TW097107925A TW97107925A TW200901303A TW 200901303 A TW200901303 A TW 200901303A TW 097107925 A TW097107925 A TW 097107925A TW 97107925 A TW97107925 A TW 97107925A TW 200901303 A TW200901303 A TW 200901303A
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TW
Taiwan
Prior art keywords
substrate
liquid
gas
air
processing apparatus
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TW097107925A
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Chinese (zh)
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TWI467643B (en
Inventor
Yukio Tomifuji
Hiroyuki Nakata
Yoshihiko Matsushita
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Dainippon Screen Mfg
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Publication of TW200901303A publication Critical patent/TW200901303A/en
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Publication of TWI467643B publication Critical patent/TWI467643B/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303Apparatus specially adapted to the manufacture of LCDs

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Weting (AREA)

Abstract

A substrate processing device prevents a treating fluid attached on a nozzle component from dripping on the substrate. The substrate processing device (1) comprises: a fluid knife (16) spraying a washing fluid on the upper surface of the conveyed substrate (S) from the upstream side to the downstream side of the conveying direction along the oblique direction and an air jet device with an air nozzle (32) for jetting air to the fluid knife (16). Moreover, the substrate processing device (1) is constructed by the following way, namely, based on the control of the controller (40), when no substrate (S) is below the fluid knife (16), air is jetted from the air nozzle (32) to the fluid knife (16).

Description

200901303 九、發明說明: 【發明所屬之技術領域】 本發明係關於一種基板處理裝置,其朝LCD(Liquid200901303 IX. Description of the Invention: [Technical Field] The present invention relates to a substrate processing apparatus which is directed to an LCD (Liquid)

Crystal Display,液晶顯示器)、pDp(pUsma DisplayCrystal Display, liquid crystal display), pDp (pUsma Display

Panel,電漿顯示面板)用玻璃基板以及半導體基板等基板 供給處理液而實施各種處理。 【先前技術】 先前,於搬送基板之同時,對該基板之表面供給各種處 理液,藉此來實施特定之製程處理,例如,於專利文獻i 中揭示有如下之基板處理裝置,其一方面搬送藥液處理後 之基板,一方面藉由液刀(狹縫噴嘴)以及噴淋噴嘴而依序 對基板供給清洗液,以實施清洗處理。 該裝置之構成如下:對於搬送來之基板,首先,藉由液 刀而自搬it方向上游側朝下游側斜向喷出帶狀之清洗液, 藉此,使藥液反應自基板之前端側開始依序沿基板之寬度 方向迅速且均勻地結束,其後,藉由自喷淋喷嘴喷出之清 洗液來對基板實施最後之清洗處理。 [專利文獻1]日本專利特開2004_273984號公報 【發明内容】 [發明所欲解決之問題] 然而’根據、纟!驗可知| ·告你、主.J. 奴』知.虽使清洗液自液刀噴出時,直至 Θ先液之抓里‘定至固定程度為止’或多或少會產生液體 滴流’但考慮到於該情形時,若順著刀表面流下之清洗液 殘留於液刀之下表面等處,則該清洗液會滴下至搬送中之 129558.doc 200901303 基板上,從而導致基板之品質下降。亦即,由於清洗液自 液刀滴τ,故而部分藥液會過早地於較 位置靠上游側之位置被置換,其結果,會破壞 樂液反應時間之均勻性。又,若長時間持續地噴出清洗 液’則清洗液之霧會附著於液刀上,該霧成為液滴後,會 自液刀滴下至基板上。此情形亦與上述情形同樣地會成為 基板品質下降之及JJJ。^ , 因此,業者哥求一種預先避免上述 不良情形之方法。 本發明係鑒於上述問題開發而成者,其目的在於藉由防 ^不必要之處理液自液刀等喷嘴構件滴下至基板上,而提 尚基板之品質。 [解決問題之技術手段] 為了解决上述問題,本發明之基板處理裝置具有喷嘴 件’該喷嘴構件對搬送中美 接*a T微运中之基板之上表面’自該基板之搬 置勺二之切側朝下游側斜向噴出處理液,該基板處理裝 及=制手^體喷射手段’其朝上述噴嘴構件噴射氣體;以 . 又,其控制上述氣體噴射手段於上述噴嘴構件之 下方沒有基板時噴射上述氣體(請求们)。 鼻件之 :據:基板處理裝置,由氣體喷射手段對噴嘴構件喷射 礼體,藉此除去因液體、冻岣 於噴她… 處理液之液滴等、附著 噴嘴椹杜杏 處理&因此,能夠預先防止附著於 射進行栌制,你π、, 板 再者,由於對氣體之噴 體,故:自嗜:當噴嘴構件之下方沒有基板時才噴射氣 、構件除去之處理液亦不會飛散至基板上。 J29558.doc 200901303 :為體之構成,上述控制手段例如控 手段,使得該氣體嘴射手段,於自上述 ::” 處理液至滿足使該處理液之喷出量穩定之特定:的出 件為止的期間内,噴射上述氣體(請求項2)。 疋化條 根據該構成,可有效地防止因開始喷出處理 之液體滴流引起自喷嘴構件滴下處理液。Panel, plasma display panel) Various treatments are performed by supplying a processing liquid to a substrate such as a glass substrate or a semiconductor substrate. [Prior Art] Conventionally, a specific processing process is performed by supplying various processing liquids to the surface of the substrate while transporting the substrate. For example, Patent Document 1 discloses a substrate processing apparatus which is transported on the one hand. On the one hand, the substrate after the chemical liquid treatment is supplied with a cleaning liquid to the substrate in order by a liquid knife (slit nozzle) and a shower nozzle to perform a cleaning process. The apparatus is configured such that, for the substrate to be conveyed, the strip-shaped cleaning liquid is obliquely ejected from the upstream side toward the downstream side by the liquid knife, thereby allowing the chemical solution to react from the front end side of the substrate. The process is started rapidly and uniformly in the width direction of the substrate, and thereafter, the substrate is subjected to a final cleaning process by the cleaning liquid sprayed from the shower nozzle. [Patent Document 1] Japanese Patent Laid-Open Publication No. 2004-273984 [Abstract] [Problems to be Solved by the Invention] However, "According to, 纟! The test can be known | · tell you, the main. J. slaves know. Although the cleaning liquid is sprayed from the liquid knife, until the catch of the liquid is 'fixed to a fixed degree', more or less liquid dripping will occur. In consideration of this situation, if the cleaning liquid flowing down the surface of the blade remains on the lower surface of the liquid knife or the like, the cleaning liquid is dropped onto the substrate of the transfer, which causes the quality of the substrate to deteriorate. That is, since the cleaning liquid drops τ from the liquid knife, some of the chemical liquid is displaced prematurely at the upstream position, and as a result, the uniformity of the reaction time of the liquid reaction is broken. Further, if the cleaning liquid is continuously ejected for a long period of time, the mist of the cleaning liquid adheres to the liquid knife, and after the mist becomes a droplet, it is dropped from the liquid knife onto the substrate. Also in this case, as in the case described above, the quality of the substrate is lowered and JJJ. ^ , Therefore, the operator seeks a way to avoid the above-mentioned bad situation in advance. The present invention has been developed in view of the above problems, and an object thereof is to improve the quality of a substrate by dropping an unnecessary treatment liquid from a nozzle member such as a liquid knife onto a substrate. [Means for Solving the Problems] In order to solve the above problems, the substrate processing apparatus of the present invention has a nozzle member 'the nozzle member for transporting the upper surface of the substrate in the US-A-T micro-transport' from the substrate. The cutting side obliquely ejects the processing liquid toward the downstream side, and the substrate processing apparatus and the nozzle forming means "spray the gas toward the nozzle member." Further, the gas injection means is controlled to be below the nozzle member. The above gases are sprayed on the substrate (requested). Nose: According to the substrate processing device, the nozzle member is sprayed by the gas jet means to remove the liquid droplets, the liquid droplets are frozen, the liquid droplets of the treatment liquid, etc., and the nozzle is attached to the nozzle and the apricot treatment & It is possible to prevent the adhesion to the shot in advance, and you can π, the plate, and the spray of the gas, so: self-adhesive: when there is no substrate under the nozzle member, the liquid is sprayed, and the treatment liquid is removed. Scattered onto the substrate. J29558.doc 200901303: The composition of the body, the control means, for example, the means for controlling the gas injection means, from the above: "" treatment liquid to the delivery of the specificity that satisfies the discharge amount of the treatment liquid: In the meantime, the gas is ejected (claim 2). According to this configuration, the deuterated strip can effectively prevent the treatment liquid from dripping from the nozzle member due to the dripping of the liquid which starts the discharge processing.

又,上述控制手段控制上述氣體喷射 喷射手段僅於被處理基板即將到達上述喷嘴構體 前的特定時間噴射上述氣體(請求項3)。 万之 根據該構成,可於即將對基板進行處理之前 於噴嘴構件之霧狀之處理液等。 〃附者 再者,於上述構成中’較好的是,上述氣體喷射手段自 上述搬送路徑之上游側朝下游側,對上述嘴嘴構件噴射上 述氣體(請求項4)。 根據該構成,由於可將附著於噴嘴構件之處理液吹向下 游側’故而可有效地防止已除去之處理液飛散至處理前之 基板上。 於該情形時’於比上述喷嘴構件更靠上述搬送方向上游 側設置有逆流防止手段’該逆流防止手段藉由朝基板之上 表面噴射氣體而防止基板上之處理液朝上游側流動,該逆 流防止手段構成為能夠對基板以及上述噴嘴構件雙方噴射 上述氣體,藉此,該逆流防止手段兼作為上述氣體喷射手 段(請求項5)。 根據該構成,利用將上述逆流防止手段兼用作上述氣體 129558.doc 200901303 噴射手段之合理之構成’能夠除去附著於噴嘴構件之表面 之處理液。 [發明之效果] 根據請求項⑴〜(5)之基板處理裝置,能夠有效地防止不 必要之處理液自噴嘴構件滴下至基板上,藉此能夠有助於 提高基板之品質。尤其根據請求項2之構成,能夠有效地 防止因開始噴出處理液之後之液體滴流而引起之處理液之 滴下,又,根據請求項3之構成,能夠有效地防止因附著 於噴嘴構件之霧狀之處理液而引起之處理液之滴下。又, 根據請求項4之構成,能夠防止如下情形,即,防止已自 噴嘴構件除去之處理液飛散至處理前之基板上,進而,根 據請求項5之構成,可獲得上述之效果,同時能夠實現將 逆流防止手段兼㈣氣时射手段之合理之構成。 【實施方式】 使用圖式來對本發明之較佳實施形態進行說明。 广係表示本發明之第1實施形態之基板處理裝置!之概 ::圖。該圖所示之基板處理裝置i,一方面將基㈣ =姿勢朝圖中之箭頭方向搬送,一方面對在前一步驟中 處理、、。处里(例如光阻液之剝離處理)之該基板S實施清洗 如圖1戶斤+ . 於該“ L具―之處理室10。 々 以特疋間隔配備有複數個搬送輥1 4。沿 s。再^等搬送棍14構成之搬送路徑’以水平姿勢搬送基板 圖中之符號12a表示形成於處理室1〇之側壁之基 12955S.doc 200901303 板s之搬入口,又,符號12b表示基板s之搬出口。 於上述處理室10之内部,配備有用以對基板3供給清洗 液(本例中為純淨水,相當於本發明之處理液)之兩種液體 噴嘴。具體而言,於緊鄰搬入口 12a之附近配備有液刀 16(相當於本發明之噴嘴構件),於該液刀16之下游側(於該 圖中為右側)配備有噴淋喷嘴丨8a、丨8b。 上述液刀16經由圖外之安裝用臂而固定於處理室1〇之壁Further, the control means controls the gas jet ejecting means to eject the gas only at a specific time immediately before the substrate to be processed reaches the nozzle structure (request item 3). According to this configuration, it is possible to apply a mist-like treatment liquid to the nozzle member immediately before the substrate is processed. Further, in the above configuration, it is preferable that the gas ejecting means injects the gas to the nozzle member from the upstream side of the transport path toward the downstream side (request item 4). According to this configuration, since the treatment liquid adhering to the nozzle member can be blown to the downstream side, it is possible to effectively prevent the removed treatment liquid from scattering to the substrate before the treatment. In this case, a backflow prevention means is provided on the upstream side of the nozzle member in the transport direction. The backflow prevention means prevents the processing liquid on the substrate from flowing toward the upstream side by injecting gas toward the upper surface of the substrate. The prevention means is configured to be capable of ejecting the gas to both the substrate and the nozzle member, and the backflow prevention means also serves as the gas injection means (request item 5). According to this configuration, the treatment liquid adhering to the surface of the nozzle member can be removed by using the above-described backflow prevention means as a reasonable configuration of the gas 129558.doc 200901303. [Effects of the Invention] According to the substrate processing apparatuses of claims (1) to (5), it is possible to effectively prevent unnecessary processing liquid from dripping onto the substrate from the nozzle member, thereby contributing to improvement in quality of the substrate. In particular, according to the configuration of the request item 2, it is possible to effectively prevent the dripping of the treatment liquid due to the dripping of the liquid after the start of the discharge of the treatment liquid, and according to the configuration of the claim 3, the mist attached to the nozzle member can be effectively prevented. The treatment liquid caused by the treatment liquid is dripped. Further, according to the configuration of the request item 4, it is possible to prevent the treatment liquid removed from the nozzle member from being scattered to the substrate before the treatment, and further, according to the configuration of the request item 5, the above-described effects can be obtained, and at the same time, It realizes the reasonable structure of the means for preventing backflow and the means of (4) gas injection. [Embodiment] A preferred embodiment of the present invention will be described using the drawings. A broad view of the substrate processing apparatus according to the first embodiment of the present invention is shown. In the substrate processing apparatus i shown in the figure, the base (four) = posture is conveyed in the direction of the arrow in the figure, and on the other hand, it is processed in the previous step. The substrate S in the place (for example, the stripping treatment of the photoresist) is cleaned as shown in Fig. 1. The processing chamber 10 of the "L-" is provided with a plurality of conveying rollers 14 at special intervals. s. The transport path formed by the transfer stick 14 is transported in a horizontal posture. The symbol 12a in the figure shows the base of the base 12955S.doc 200901303 formed on the side wall of the processing chamber 1 又, and the symbol 12b indicates the substrate. The inside of the processing chamber 10 is provided with two liquid nozzles for supplying a cleaning liquid (in this example, pure water, which corresponds to the treatment liquid of the present invention) to the substrate 3. Specifically, in the immediate vicinity A liquid knife 16 (corresponding to the nozzle member of the present invention) is provided in the vicinity of the inlet 12a, and a shower nozzle 8a, 8b is provided on the downstream side (the right side in the figure) of the liquid knife 16. 16 is fixed to the wall of the processing chamber 1 via the mounting arm outside the drawing

面等。該液刀16於基板S之搬送路徑之寬度方向(與基板8 之搬送方向正交之方向,於該圖中為與紙面正交之方向) 上為細長,且由具有沿上述搬送路徑之長度方向連續延伸 之細長之噴出口的所謂之狹縫噴嘴而構成,如同圖所示, 將喷出口以朝下傾斜之狀態而配置於搬送輥14之上部。藉 此成為如下之構成,即,自基板S之搬送方向上游側朝下 游側斜向下呈帶狀(層狀)地,將清洗液自液刀16噴出至基 板S。 另一万面 上述噴淋喷嘴18a、18b介隔搬送輥14而配置 於上下兩㈣’例如’自呈矩陣狀配置之嗔嘴口分別呈液滴 狀地喷出清洗液,將該清洗液噴射至基板S上。 再者如同圖所不,清洗液儲存於配置在處理室1 〇之下 方之貯槽2G中,错由使栗22作動’經由導出管㈣將上述 m洗液自貯槽2G導4,並經由自該導出管24分支出之供仏 管26〜28,將上述清洗液分別供給至液刀㈣及各噴时 嘴18a、18b。於各其 、卞贾 V1^V,,II 仏、,5 s 26〜28上分別安裝有開關閥 、5亥等開關閥V1〜V3而控制對於液刀16等 129558.doc 10 200901303 供給或停止供給清洗液’或者控制該清洗液之供給量。 又,於上述處理室10之内底部設置有漏斗狀之回收盤 (省略圖示),藉由該回收盤來收集已使用之清洗液,並使 該清洗液經由回收管30而返回至上述貯槽20。亦即,於七亥 基板處理裝置1中,以使清洗液於貯槽2〇與液刀16等之間 循環並反覆使用之方式,構成清洗液之給排系統。再者, 該給排系統之構成在於:具有自回收管3〇之中途部分分支 出之圖外之廢液管、與圖外之新液供給管,可經由上:廢 液管來廢棄已劣化之清洗液,另一方面,可經由上述新液 供給管將新之清洗液供給至貯槽2〇。 於上述處理室10内進而設置有用以朝液刀㈣射氣體 (於本例中為空氣)之空氣喷嘴32。該空氣噴嘴32係沿 液刀!6延伸之細長之構件,且由在其長度方向上 ^個圓形喷出口之喷霧嘴構成,或由具有在長度方向上連 :(或斷續)延伸之細長之噴出口的狹縫噴嘴 配置於搬人口⑸附近之—對搬送_之間^ ^精此’如圖2所示’該空氣噴嘴32於液刀16之下方沒 土板以寺,可斜向上地自搬送路徑之下方 *山加八a A I下方朝液刀16之前 女而4分喷射空氣,更具體而 、篆七二 j斜向上地自基板S之搬 达方向之上游側朝下游側噴射空氣。 空氣嗜嘴1 ?笼ia A 於本例中’ έ亥 ’、噴嘴4相虽於本發明之氣體喷射手段。 如圖1所不’上述空氣喷嘴32經由空 於圖外之空氣供給源。繼而 置7Β36而連接 管36之門關門W 田對叹置於上述空氣供給 S36之開關閥〜進行 制二乳贺嘴32噴射空氣或 129558.doc 200901303 停止噴射空氣。Etc. The liquid blade 16 is elongated in the width direction of the transport path of the substrate S (the direction orthogonal to the transport direction of the substrate 8, which is orthogonal to the plane of the drawing in the drawing), and has a length along the transport path. The so-called slit nozzle of the elongate discharge port extending in the direction is arranged, and as shown in the figure, the discharge port is disposed in the upper portion of the conveyance roller 14 in a state of being inclined downward. In this case, the cleaning liquid is ejected from the liquid blade 16 to the substrate S from the upstream side in the conveying direction of the substrate S toward the downstream side in a strip shape (layered shape). The other shower nozzles 18a and 18b are disposed on the upper and lower sides (four) of the transfer nozzles 18a and 18b. For example, the cleaning liquid is ejected in a droplet shape from the nozzle openings arranged in a matrix, and the cleaning liquid is ejected. Onto the substrate S. Further, as shown in the figure, the cleaning liquid is stored in the storage tank 2G disposed below the processing chamber 1 , and the pump 22 is operated by the outlet tube (4). The m washing liquid is guided from the storage tank 2G via the outlet tube (4), and The supply pipes 24 are branched from the supply pipes 26 to 28, and the cleaning liquid is supplied to the liquid knife (4) and the respective nozzles 18a and 18b. On each of them, 卞 V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V Supply the cleaning liquid 'or control the supply amount of the cleaning liquid. Further, a funnel-shaped recovery tray (not shown) is disposed at the bottom of the processing chamber 10, and the used cleaning liquid is collected by the recovery tray, and the cleaning liquid is returned to the storage tank via the recovery tube 30. 20. That is, in the seven-sea substrate processing apparatus 1, the cleaning liquid is configured to circulate and reuse the cleaning liquid between the storage tank 2 and the liquid knife 16 and the like. Further, the supply and discharge system is configured to have a waste liquid pipe outside the map branched out from the middle of the recovery pipe 3, and a new liquid supply pipe outside the drawing, which can be discarded by the waste liquid pipe On the other hand, the new cleaning liquid can be supplied to the storage tank 2 via the new liquid supply pipe. An air nozzle 32 for injecting a gas (in this example, air) toward the liquid knife (4) is further provided in the processing chamber 10 described above. The air nozzle 32 is along the liquid knife! 6 an elongated member extending from a spray nozzle having a circular discharge port in the longitudinal direction thereof, or a slit nozzle having an elongated discharge port extending in the longitudinal direction: (or intermittently) It is placed in the vicinity of the moving population (5) - between the transporting _ between ^ ^ fine this as shown in Figure 2 'The air nozzle 32 is below the liquid knife 16 without a soil plate to the temple, which can be obliquely upward from the bottom of the transport path * In the case of the mountain, the a AI is sprayed with air for 4 minutes before the liquid knife 16 and more specifically, and the air is sprayed upward from the upstream side of the moving direction of the substrate S obliquely upward. The air mouthpiece 1 ? cage ia A is in this example 'έ海', and the nozzle 4 phase is the gas injection means of the present invention. As shown in Fig. 1, the air nozzle 32 passes through an air supply source that is outside the drawing. Then, 7Β36 is connected and the door of the connecting pipe 36 is closed. W. The sigh is placed on the above-mentioned air supply S36. The valve is opened. The air is sprayed or the air is sprayed or 129558.doc 200901303.

再者’於該基板處理裝置!中設置有將cpu(Central Processing Unit,中央處理單元)等作為構成要素之控制器 4〇(相當於本發明之控制手段),藉由該控制器4〇來統一地 控制搬送輥14之驅動操作或上述開關閥¥1〜¥4之切換操 作。尤其,於s亥裝置1中,如圖】所示,於處理室丨〇外之上 述搬入口 12a之稍微上游側、與處理室1〇内之上述搬出口 12b附近,分別配置有用於檢測基板3之感應器(稱為第^感 應器42、第2感應器44),控制器4〇根據該等感應器42、44 對基板S之檢測結果來控制開關閥v丨〜V4。 其次,說明該控制器40對開關閥V1〜V4之控制,即,說 明經由液刀16供給清洗液之㈣、及經由线喷料噴射 空氣之控制、以及該等控制之作用。 圖4係表示上述控制器4〇控制開關閥νι〜ν4之一例之時 序圖如圖4所不,直至第!感應器42檢測出基板s為止, 控制器40對各開_閥V1〜V4進行關閉控制,藉此,停止自 液刀16等噴出清洗液,並停止自空氣喷嘴32噴射空氣。 繼而’搬送基板S,當第i感應器42檢測出該基板s之前 编日“ti時點)’控制器40將開關閥νι〜ν3自關閉狀態切換 為開放狀態,藉此’開始自液刀16以及噴淋喷嘴18a、m 噴出清洗液X,與此同時將開關間V4僅開放固定時間, 自空氣喷嘴32噴射空氣(tl〜t2時點)。藉此,於液刀16開始 喷出清洗液之後,僅於固宗昧pq咖M A ^ 1皇於固疋日守間内對空氣噴嘴32之前端部 分噴射空氣。 129558.doc 12 200901303 右以上述方式噴射空氣,則於噴射剛開始之後,藉由空 氣壓力而除去自噴射口順著液刀16流下之清洗液(液體的 滴流)、或附著於液刀16之霧狀之清洗液,藉此,例如圖3 中所不,防止清洗液以水滴狀殘留於液刀16之前端下部等 (以符號D來表示)。 再者,空氣之噴射時間(tl〜t2之時間)設定為如下之時 門該日^間係第1感應器42檢測出基板s之前端之後,至該Furthermore, the substrate processing device! A controller 4 (corresponding to a control means of the present invention) having a cpu (Central Processing Unit) or the like as a component is provided, and the drive operation of the transport roller 14 is collectively controlled by the controller 4? Or the switching operation of the above-mentioned switching valve ¥1 to ¥4. In particular, in the sigma apparatus 1, as shown in the figure, a substrate for detecting the substrate is disposed on the slightly upstream side of the transfer port 12a outside the processing chamber and in the vicinity of the transfer port 12b in the processing chamber 1b. The sensor 3 (referred to as the first sensor 42 and the second sensor 44) controls the switching valves v 丨 V V4 based on the detection results of the substrates S by the sensors 42 and 44. Next, the control of the on-off valves V1 to V4 by the controller 40, that is, the (four) supply of the cleaning liquid via the liquid knife 16, the control of the injection of air via the line injection, and the effects of such control will be described. Fig. 4 is a timing chart showing an example of the above-described controller 4 〇 controlling the switching valves νι to ν4 as shown in Fig. 4 until the first! When the sensor 42 detects the substrate s, the controller 40 closes the respective open valves V1 to V4, thereby stopping the discharge of the cleaning liquid from the liquid knife 16 or the like and stopping the ejection of the air from the air nozzle 32. Then, the substrate S is transferred, and the controller 40 switches the switching valves νι to ν3 from the off state to the open state before the i-th sensor 42 detects the substrate s, thereby starting the liquid knife 16 The shower nozzles 18a and m eject the cleaning liquid X, and at the same time, the switch V4 is opened only for a fixed period of time, and air is ejected from the air nozzle 32 (at a time point of t1 to t2), whereby after the liquid knife 16 starts to eject the cleaning liquid The air is sprayed on the front end of the air nozzle 32 only in the squatting room of the Gusong 昧pq coffee MA ^ 1 于 129 129 558.doc 12 200901303 The air is sprayed in the above manner, just after the start of the injection, by the beginning The cleaning liquid (the trickle of the liquid) flowing down from the liquid jet 16 or the mist-like cleaning liquid adhering to the liquid knife 16 is removed by the air pressure, thereby preventing the cleaning liquid from being removed, for example, as shown in FIG. The water droplets remain in the lower portion of the front end of the liquid knife 16 or the like (indicated by the symbol D). Further, the air injection time (time t1 to t2) is set as follows when the door is detected by the first sensor 42 After the front end of the substrate s, to the

基之前端到達液刀16與搬入口 i2a之間之特定地點為止^ 、吁間亦即,將空氣之喷射期間設定為液刀丨6之下方沒 有基板S之期間’藉此’避免基板8遮斷自空氣喷嘴32喷射 出之空氣之不良情形,或者避免自液刀“除去之清洗液因 來自空氣喷嘴32之空氣而飛散至基板s上之不良情形。再The front end of the base reaches a specific point between the liquid knife 16 and the transfer inlet i2a, and the air injection period is set to the period below the liquid knife 6 without the substrate S. The problem of the air ejected from the air nozzle 32 is broken, or the problem that the cleaning liquid removed from the liquid knife is scattered to the substrate s due to the air from the air nozzle 32 is avoided.

者’將該空氣之喷射時間設定得充分長於,自將開關閥W 切換為開放狀態至液刀16噴出清洗液之喷出量穩定為止之 時間。 、、繼而,於停止自空氣喷嘴32喷射空氣之《堯,將基板嫌 送至液刀16之下方,藉此’自液刀16噴出之清洗液隨著基 板S之搬送,自該基板8之前端側依序供給至整個寬度,其 結果,藥液反應迅速且均勾地於基板8之寬度方=上結 束。此時,如上所述’預先朝液刀16噴射空氣而除去附著 ㈣液刀⑽清洗液’藉此’可有效地防止滯留於液㈣ 之W端下部等之清洗液之液滴等(符號D)滴下至較清洗液 原本之供給位置P1 (參照圖3)靠上游側之位置p 2。 基板S經過液刀16之位置後,接著,自喷淋喷嘴⑽、 129558.doc -13- 200901303 18b噴出之大量之清洗液供給至基板s之上表面以及下表 面,藉此對基板S進行最後之清洗。The air injection time is set to be sufficiently longer than the time from when the switching valve W is switched to the open state until the discharge amount of the cleaning liquid discharged from the liquid jet 16 is stabilized. Then, after the air is ejected from the air nozzle 32, the substrate is sent to the lower side of the liquid knife 16, whereby the cleaning liquid ejected from the liquid knife 16 is transported along with the substrate S, from the substrate 8. The front end side is sequentially supplied to the entire width, and as a result, the chemical liquid reacts quickly and ends at the width of the substrate 8 = the upper end. At this time, as described above, the air is sprayed toward the liquid jet 16 to remove the adhesion (four) liquid knife (10), and the cleaning liquid 'by this' can effectively prevent the liquid droplets and the like of the cleaning liquid remaining in the lower portion of the W end of the liquid (4) (symbol D). Dropping to the upstream position p 2 of the supply position P1 (see Fig. 3) of the cleaning liquid. After the substrate S passes the position of the liquid knife 16, then a large amount of the cleaning liquid sprayed from the shower nozzles (10), 129558.doc -13 - 200901303 18b is supplied to the upper surface and the lower surface of the substrate s, thereby finalizing the substrate S. Cleaning.

然後,進一步搬送基板S,當第2感應器44檢測出基板s 之前端時(t3時點),控制器40將開關閥V1自開放狀態切換 為關閉狀態,藉此停止自液刀16噴出清洗液,進而,當第 2感應器44檢測出基板S之後端時(t4時點),將開關閥v2、 V3分別自開放狀態切換為關閉狀態,藉此停止自噴淋喷嘴 18a、18b噴出清洗液。藉由以上動作,基板s之一系列之 清洗處理結束。 如上所述,於該基板處理裝置,藉由朝空氣喷嘴32 之則端部分噴射空氣,除去自喷出口順著液刀丨6流下之清 洗液(液體的滴流)或附著於液刀16之霧狀之清洗液,藉 此,防止不必要之清洗液自液刀16滴下至基板§上。因 此,可有效地防止產生如下之不良情形:因清洗液自液刀 1 6滴下至較原本之供給裝置p丨靠上游側之位置,導致藥 液反應局部性地過早結束,從而破壞藥液處理之均勻性。 因此,只要能夠避免上述問題,便可對基板s實施更加均 句之藥液處理’其結果,可進一步提高基板之品質。 繼而,對本發明之第2實施形態進行說明。 圖5係表示本發明之第2實施形態之基板處理裝置之概略 剖面圖。如該圖所示 該第2實施形態之基板處理裝置2與 弟1實施形態之基板處理裝置1之構成的不同點在於:空氣 喷觜32叹置於搬送路徑之上方,且將該空氣噴嘴η兼用作 防止清洗液逆流之手段。 129558.doc •14- 200901303 具體而言,於液刀16之後姐__ 部分配置有空氣喷嘴32,空氣嘴嘴為左端下方)之 游側斜向下地朝一前端下噴=;氣為自上游側至下 如圖6所不’該空氣喷嘴32朝液刀 亂,並且當於液刀16等之下方存在下部贺射空 游側朝下游側對該基板^之上表面喷土射空氣之上 噴射角度。亦即,利用上述控制器 置= ίThen, the substrate S is further conveyed, and when the second inductor 44 detects the front end of the substrate s (at time t3), the controller 40 switches the switching valve V1 from the open state to the closed state, thereby stopping the discharge of the cleaning liquid from the liquid knife 16. Further, when the second inductor 44 detects the rear end of the substrate S (at the time t4), the switching valves v2 and V3 are switched from the open state to the closed state, respectively, thereby stopping the discharge of the cleaning liquid from the shower nozzles 18a and 18b. By the above operation, the cleaning process of one of the substrates s is completed. As described above, in the substrate processing apparatus, the air is ejected toward the end portion of the air nozzle 32, and the cleaning liquid (the trickle of the liquid) flowing down the liquid jet port 6 from the ejection port or the liquid knife 16 is removed. The mist-like cleaning liquid is thereby prevented from dropping unnecessary cleaning liquid from the liquid knife 16 onto the substrate §. Therefore, it is possible to effectively prevent the following problem: the cleaning liquid is dropped from the liquid knife 16 to the upstream side of the original supply device p丨, causing the chemical reaction to partially end prematurely, thereby destroying the chemical solution. Uniformity of processing. Therefore, as long as the above problem can be avoided, the substrate s can be subjected to a more uniform chemical liquid treatment. As a result, the quality of the substrate can be further improved. Next, a second embodiment of the present invention will be described. Fig. 5 is a schematic cross-sectional view showing a substrate processing apparatus according to a second embodiment of the present invention. The difference between the substrate processing apparatus 2 of the second embodiment and the substrate processing apparatus 1 of the first embodiment is that the air squirt 32 is placed above the transport path and the air nozzle η is shown. It is also used as a means to prevent backflow of cleaning fluid. 129558.doc •14- 200901303 Specifically, after the liquid knife 16 is installed, the air nozzle 32 is disposed in the __ section, and the air nozzle is below the left end.) The swimming side is sprayed downward downward toward the front end; the gas is from the upstream side. As shown in Fig. 6, the air nozzle 32 is squirting toward the liquid knife, and when there is a lower side of the liquid knife 16 or the like, there is a lower side of the moving side, and the lower side is sprayed on the surface of the upper surface of the substrate. angle. That is, using the above controller setting = ί

此’當對基板S進行處理時=_V4,藉 氣喷嘴32之 :、第“㈣癌同樣地,朝空 邮下之、主 喷射空氣,以除去自喷出口順著液刀 ,下之清洗液(液體的滴流)、或附著於液刀16之霧狀之 ’月洗液。另-方面’當例如因基板s之搬送故障等,導致 基板S於橫跨處理室1〇與其上游側之處理室之狀態下停止 搬送時(圖6中之兩點鎖線所示之狀態),藉由自空氣喷嘴32 朝基板s之上表面喷射空氣,防止基本3上之清洗液逆流, 即,防止供給至基板s上之清洗液順著該基板§而流入至上 游側之處理室。 根據此種第2實施形態之基板處理裝置2,與第〖實施形 心同樣地,可有效地防止不必要之清洗液自液刀16滴下至 基板S上’另一方面,能夠實現如下之合理之構成,即, 上述空氣喷嘴32等兼具有用以對液刀16喷射空氣之手段裝 置之功能、與作為防止清洗液逆流之手段之功能。 再者’以上所說明之基板處理裝置1、2係本發明之基板 處理裝置之較佳實施形態的例示,其具體構成,例如空氣 喷嘴32之形狀、配置、空氣之喷射方向(角度)、喷射時序 129558.doc •15· 200901303 疋限疋於本實施形態之示例,於不脫離本發明之宗 旨之範圍内,可適當進行變更。 例如,於上述實施形態中,雖然空氣噴嘴32設定為固 疋仁亦可藉由裝入搖動機構而使空氣喷嘴32能夠圍繞與 送輥14平行之軸搖動,從而能夠一方面朝液刀μ噴射空 氣’ Y方面改變該空氣之喷射方向。尤其,於第2實施形 情形時,存在如下之情形,#,除去液刀16之液滴等 (This 'when the substrate S is processed =_V4, the gas nozzle 32:, the "(four) cancer, the same as the airmail, the main jet air, to remove the self-ejection outlet along the liquid knife, the lower cleaning liquid (Drip of liquid), or a misty 'month wash liquid attached to the liquid knife 16, another aspect' causes the substrate S to straddle the processing chamber 1 and its upstream side, for example, due to a transport failure of the substrate s or the like. When the conveyance is stopped in the state of the processing chamber (the state indicated by the two-point lock line in Fig. 6), the air is sprayed from the air nozzle 32 toward the upper surface of the substrate s to prevent the cleaning liquid on the base 3 from flowing backward, that is, the supply is prevented. The cleaning liquid on the substrate s flows into the processing chamber on the upstream side along the substrate §. The substrate processing apparatus 2 according to the second embodiment can effectively prevent unnecessary use in the same manner as the first embodiment. The cleaning liquid is dropped from the liquid blade 16 onto the substrate S. On the other hand, it is possible to realize a configuration in which the air nozzle 32 and the like have a function of means for ejecting air to the liquid knife 16, and as a prevention. The function of the means of cleaning liquid countercurrent. The substrate processing apparatuses 1 and 2 described above are examples of preferred embodiments of the substrate processing apparatus of the present invention, and the specific configuration thereof is, for example, the shape and arrangement of the air nozzles 32, the direction (angle) of the air jet, and the ejection timing 129558. Doc •15· 200901303 is not limited to the scope of the present invention, and may be modified as appropriate. For example, in the above embodiment, the air nozzle 32 may be set to be a solid coke. By inserting the rocking mechanism, the air nozzle 32 can be swung around the axis parallel to the feed roller 14, so that the direction of the air jet can be changed on the one hand toward the liquid knife μ. In particular, in the second embodiment At the time, there are the following cases, #, removing the liquid droplets of the liquid knife 16, etc. (

之取佳空氣噴射肖度、與防止清洗液逆流之最佳空氣喷射 角度不疋相同,當將空氣喷嘴3 2設為固定時,難以使空 氣:射角度成為對上述兩種用途均最佳之角度。於此種情 形日守,右如上所述,將空氣噴嘴32設為可搖動,且藉由控 制器40根據用途來控制空氣噴嘴32之角度(空氣之喷射角 度)’則能夠以對液刀16以及基板§雙方均最佳之角度來 射空氣。 、 又,關於S氣喷嘴32噴射空氣之時期,必f避免基板8 遮斷自空氣喷嘴32喷射出之空氣(第丨實施形態之情形)之不 良情形、或者自液刀16除去之清洗液因來自空氣喷嘴32之 空氣而飛散至基板S上之不良情形,因此,起碼必需避開 液刀16之下方存在基板8之期間,但只要是除此以外之期 間,則可於任何時間喷射空氣。然而,於自液刀Μ開始嘴 出清洗液至該清洗液之喷出量穩定為止之期間令,液滴狀 之清洗液谷易因液體滴流而殘留於液刀1 6上,因此,汝 述實施形態所述’於此期間中,對液刀16噴射空氣之心 可有效地防止清洗液之滴下。 129558.doc 200901303 Λ日夺’預先測定ή & 液之流量達到特^^清洗液至供給管26内之清洗 間(穩定化條侔、,^疋也賀出清洗液之流量)為止的時 除此以外 I根據該時間來控制空氣之噴射時間, 流量,檢測Π::即時地檢測供給管%内之清洗液之 (穩定化條件洗液至該流量達到上述特定值 之,預參z* 6 、點,並根據該檢測而停止噴射空氣。總 需之穩定化2自液刀16嗔出之清洗液之喷出狀態穩定所The best air injection angle is the same as the optimum air injection angle for preventing the backflow of the cleaning liquid. When the air nozzle 32 is fixed, it is difficult to make the air: the angle of the shot is the best for both applications. angle. In this case, as described above, the air nozzle 32 is set to be shaken, and the angle of the air nozzle 32 (air injection angle) is controlled by the controller 40 according to the use, and the liquid knife 16 can be used. And the substrate § both sides are the best angle to shoot the air. Further, when the S gas nozzle 32 injects air, it is necessary to prevent the substrate 8 from blocking the air ejected from the air nozzle 32 (in the case of the third embodiment) or the cleaning liquid removed from the liquid knife 16 Since the air from the air nozzle 32 is scattered on the substrate S, it is necessary to avoid the period in which the substrate 8 is present under the liquid knife 16, but the air can be ejected at any time as long as it is other than this. However, in the period from the start of the liquid rinsing to the discharge of the cleaning liquid until the discharge amount of the cleaning liquid is stabilized, the droplet-shaped cleaning liquid is likely to remain on the liquid knife 16 due to the liquid dripping, so that 汝In the above-described embodiment, the center of the air jet 16 is ejected to effectively prevent the dripping of the cleaning liquid. 129558.doc 200901303 Λ日夺' pre-measurement ή & liquid flow rate reached the cleaning solution to the cleaning chamber in the supply pipe 26 (stabilized strips, ^ 疋 also congratulated the flow rate of the cleaning liquid) In addition, I controls the injection time of the air according to the time, the flow rate, and the detection Π:: Instantly detects the cleaning liquid in the supply pipe % (stabilizing condition washing liquid until the flow rate reaches the above specific value, pre-study z* 6, point, and stop the injection of air according to the detection. The total required stabilization 2 the discharge state of the cleaning liquid from the liquid knife 16 is stable

定化條件為止之期:;=::_洗液至滿足上述穩 即可。 空氣噴嘴32對液刀16喷射空氣 8於處理複數個基板s之期間中,當自液刀Μ或喷淋 J 1 8b連續地喷出清洗液時,處理室10内會產生大 量之霧1而容易於液刀16上產生清洗液之液滴。因此, 於此種It料,僅於基板s到達液刀16下方之前之固定時 間内,乂空氣噴嘴32噴射空氣,藉此,可有效地於即將對 基板s進行處理之前,自液刀16除去上述液滴。 再者’於上述實施形態中’已對將本發明應用於對基板 S實施清洗處理之基板處理裝置丨' 2之示例進行了說明, 當然,本發明並不限定於進行清洗處理之裝置,亦可使用 於進行藥液處理等之基板處理裝置。 【圖式簡單說明】 圖1係表示本發明之基板處理裝置之第1實施形態之剖面 圖。 圖2係基板處理裝置之要部放大剖面圖。 129558.doc -17· 200901303 圖3係表示液刀與自該液刀供給至基板上之清洗液之供 給位置之間的關係之圖。 圖4係表示控制器對於開關閥之控制之時序圖。 圖5係表示本發明之基板處理裝置之第2實施形態之剖面 圖。 圖6係基板處理裝置之要部放大剖面圖。 【主要元件符號說明】The period until the conditions are standardized: ; =:: _ wash the liquid until the above stability is satisfied. When the air nozzle 32 injects the air 8 to the liquid knife 16 during the processing of the plurality of substrates s, when the cleaning liquid is continuously ejected from the liquid knife or the shower J 18b, a large amount of mist 1 is generated in the processing chamber 10 It is easy to generate droplets of the cleaning liquid on the liquid knife 16. Therefore, in such a material, the air nozzle 32 injects air only for a fixed time before the substrate s reaches the lower portion of the liquid knife 16, whereby the liquid blade 16 can be effectively removed immediately before the substrate s is processed. The above droplets. In the above embodiment, the example in which the present invention is applied to the substrate processing apparatus 丨' 2 for performing the cleaning process on the substrate S has been described. Of course, the present invention is not limited to the apparatus for performing the cleaning process, and A substrate processing apparatus for performing a chemical liquid treatment or the like can be used. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing a first embodiment of a substrate processing apparatus according to the present invention. 2 is an enlarged cross-sectional view of an essential part of a substrate processing apparatus. 129558.doc -17· 200901303 Fig. 3 is a view showing the relationship between the liquid knife and the supply position of the cleaning liquid supplied from the liquid blade to the substrate. Figure 4 is a timing diagram showing the controller's control of the switching valve. Fig. 5 is a cross-sectional view showing a second embodiment of the substrate processing apparatus of the present invention. Fig. 6 is an enlarged cross-sectional view of an essential part of the substrate processing apparatus. [Main component symbol description]

1、2 10 14 16 18a ' 18b 32 S 基板處理裝置 處理室 搬送輥 液刀 噴淋噴嘴 空氣噴嘴 基板 I29558.doc1, 2 10 14 16 18a ' 18b 32 S Substrate processing unit Processing chamber Transfer roller Liquid knife Spray nozzle Air nozzle Substrate I29558.doc

Claims (1)

200901303 十、申請專利範園: ^基板處理裝置,其具有喷嘴構件,該㈣構件對搬 、之基板之上表面,自上述基板之搬送方向之上游側 朝下游側斜向喷出處理液,上述基板處理裝置之特徵在 孔體喷射手段,其朝向上述喷嘴構件喷射氣體;以及 控制手#又’其控制上述氣體喷射手段於上述喷嘴構件 之下方沒有基板時喷射上述氣體。 2. 3. 4. 如請求項1之基板處理裝置,其中 ^控制手段控制上述氣时射手段,使得上述氣體 實射手段,S上述喷嘴構件開始嘴出處理液至滿足該處 ^液之噴出狀態成為敎之料的衫化條件為止的期 間内’喷射上述氣體。 如請求項1或2之基板處理裝置,其中 控制手段控制上述氣體喷射手段,使得上述氣體 贺射手段僅在被處理基板即將到達上述噴嘴構件下方之 前的特定時間噴射上述氣體。 如請求項1或2之基板處理裝置,其中 5. 上述氣體噴射手段自上 側,對上述噴嘴構件喷射上 如請求項4之基板處理裝置 述搬送路徑之上游側朝 述氣體。 ,其中 下游 於比上述喷嘴構件更靠 由朝基板之上表面噴射氣 游側流動的逆流防止手段 上述搬送方向上游側設置有藉 體而防止基板上之處理液朝上 ,該逆流防止手段藉由構成為 I29558.doc 200901303 可對基板以及上述喷嘴構件之雙方喷射上述氣體,而使 上述逆流防止手段兼作為上述氣體喷射手段。 129558.doc200901303 X. Patent application process: ^The substrate processing apparatus has a nozzle member, and the upper surface of the substrate on which the (4) member is moved, obliquely ejects the processing liquid toward the downstream side from the upstream side in the transport direction of the substrate, The substrate processing apparatus is characterized in that the hole body ejecting means ejects gas toward the nozzle member; and the control hand #'' controls the gas ejecting means to eject the gas when there is no substrate below the nozzle member. 2. The substrate processing apparatus of claim 1, wherein the control means controls the gas timing means such that the gas generating means, the nozzle member starts to discharge the processing liquid to satisfy the discharge of the liquid The gas is ejected during the period until the state becomes the jersey condition. The substrate processing apparatus according to claim 1 or 2, wherein the control means controls the gas ejecting means such that the gas moving means ejects the gas only at a specific time immediately before the substrate to be processed reaches the nozzle member. The substrate processing apparatus according to claim 1 or 2, wherein the gas injection means sprays the upstream side of the transport path of the substrate processing apparatus of claim 4 from the upper side to the nozzle member. a downstream flow preventing means for injecting a gas flow side toward the upper surface of the substrate than the nozzle member, wherein the upstream side of the transport direction is provided with a substrate to prevent the processing liquid on the substrate from facing upward, and the backflow prevention means In the case of I29558.doc 200901303, the gas can be ejected to both the substrate and the nozzle member, and the backflow prevention means can also serve as the gas injection means. 129558.doc
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JP4850775B2 (en) 2012-01-11
TWI467643B (en) 2015-01-01
JP2008277682A (en) 2008-11-13
KR100934329B1 (en) 2009-12-29

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