TW200903599A - Base plate treating device - Google Patents

Base plate treating device Download PDF

Info

Publication number
TW200903599A
TW200903599A TW97110235A TW97110235A TW200903599A TW 200903599 A TW200903599 A TW 200903599A TW 97110235 A TW97110235 A TW 97110235A TW 97110235 A TW97110235 A TW 97110235A TW 200903599 A TW200903599 A TW 200903599A
Authority
TW
Taiwan
Prior art keywords
substrate
processing
liquid
treatment
tank
Prior art date
Application number
TW97110235A
Other languages
Chinese (zh)
Inventor
Yukio Tomifuji
Kazuto Ozaki
Original Assignee
Dainippon Screen Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dainippon Screen Mfg filed Critical Dainippon Screen Mfg
Publication of TW200903599A publication Critical patent/TW200903599A/en

Links

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)

Abstract

The invention provides a substrate processing device, which can correctly hold the processing status of the substrate. The substrate processing device has processing grooves (10A-10C), for transmitting the substrate (S) slantly and meanwhile providing flushing liquid to the surface of the substrate (S) through a spray spout (14) in the processing grooves (10A-10C), also cleaning process is implemented. A first PH value measuring device (16) receives the cleaning liquid before the cleaning liquid gets to the bottom of the grooves flowing along the surface of the substrate (S) and measures the PH value, based on the measuring result measured by the PH value measuring device (16), the supply amount of the flushing liquid in the processing grooves (10A-10C) is controlled by a controller (40).

Description

200903599 九、發明說明: 【發明所屬之技術領域】 本發明係關於一種朝LCD(Liquid Cystal Display,液晶 顯不器)、PDP(Plasma Display Panel,電漿顯示面板)用玻 璃基板及半導體基板等基板供給處理液而實施各種處理之 基板處理裝置。 【先前技術】 眾所周知,先前,作為如上述之基板處理裝置,將貯存 於貯槽中之處理液輸送至處理槽中,並自配置於該處理槽 内部之噴嘴構件,將處理液供給至基板上,另一方面,將 使用後之處理液自處理槽回收至上述貯槽中,藉此循環使 用處理液。作為此種裝置,例如於專利文獻丨中揭示有如 下裝置.測定自處理槽導出之處理液之污染(劣化)狀態, 具體而言,測定處理液之pH值,在處理液之污染度高之處 理開始之後,完全廢棄所導出之處理液,當污染度降低至 固定等級以下時,將處理液回收至上述貯槽中。 [專利文獻1]曰本專利特開平11_238716號公報 【發明内容】 [發明所欲解決之問題] 於先前之此種基板處理裝置中,通常會對基板定量地供 給處理液。例如,於一面輸送基板一面進行處理之基板處 理裝置中,開始供給處理液及停止供給處理液係基於由專 門設置於輸送路徑等之感應器對基板進行之檢測而進行, 於處理中,以固定流量朝基板供給處理液。因此,亦存在 129948.doc 200903599 對於小尺寸之基板等過度地供給處理液而白白地消耗處理 液之情形。 近年來,為了更經濟地進行基板之處理,業者要求抑制 處理液之浪費(供給),考慮如專利文獻丨般監視自處理槽導 出之處理液之污染(劣化),以使處理液之供給量適量。亦 即,於處理液之污染(劣化)狀態與基板之處理狀況之間存 在某程度之相互關係,因而考慮根据處理液之污染狀態来 推測基板之處理狀況,基於此來控制處理液之供給量。然 而,當如上述文獻1般監視自處理槽導出之處理液之污染 狀態時,由於未經由基板之處理液、即喷射至處理槽之壁 面而包含附著於該壁面上之多餘之污染成分的處理液亦成 為監視對象’故而無法充分準確地把握基板之處理狀況。 本發明係鑒於上述問題開發而成者,其第一目的在於能 夠更準確地把握基板之處理狀況,其第二目的在於抑制處 理液之浪費(供給)以合理地對基板進行處理。 [解決問題之技術手段] 為解決上述問題,本發明的基板處理裝置具有藉由喷嘴 構件朝基板之表面供給處理液而對基板實施特定之處理之 處理槽,該基板處理裝置具有測定機構,該測定機構在自 上述基板之表面流下之處理液到達上述處理槽的底部之前 接受該處理液,;則定與該處理液之劣化1態相關聯之特定 之物理量(請求項丨)。 如此自基板之表面流下之處理液到達處理槽的底部之 别,直接接受該處理液並測定上述物理量,根據該構成, 129948.doc 200903599 由於僅注入至基板之處理液成為測定對象’故而能夠自測 定對象中排除多餘之污染成分。因此,基於上述物理量之 測定結果,能夠更準確地把握基板之處理狀況。 更具體而言,該基板處理裝置具有在處理中將上述基板 以傾斜姿勢支持之支持機構,上述測定機構配置於受到上 述支持機構支持之基板之低位側之端緣的下方(請求項2)。 例如’於-面以傾斜姿勢輸送基板—面朝該基板之表面The present invention relates to a substrate such as a glass substrate for a liquid crystal display (LCD), a PDP (Plasma Display Panel), and a semiconductor substrate. A substrate processing apparatus that performs various treatments by supplying a processing liquid. [Prior Art] As a substrate processing apparatus as described above, the processing liquid stored in the storage tank is transported to the processing tank, and the processing liquid is supplied to the substrate from the nozzle member disposed inside the processing tank. On the other hand, the treatment liquid after use is recovered from the treatment tank into the storage tank, whereby the treatment liquid is recycled. As such a device, for example, the following document discloses a device for measuring a state of contamination (deterioration) of a treatment liquid derived from a treatment tank, and specifically, measuring a pH value of the treatment liquid, and having a high degree of contamination in the treatment liquid After the start of the treatment, the discharged treatment liquid is completely discarded, and when the degree of contamination is reduced to a fixed level or lower, the treatment liquid is recovered into the storage tank. [Problem to be Solved by the Invention] In the substrate processing apparatus of the prior art, the processing liquid is usually supplied quantitatively to the substrate. For example, in the substrate processing apparatus that performs processing while transporting the substrate, the supply of the processing liquid and the stop of the supply of the processing liquid are performed based on the detection of the substrate by an inductor specially provided on the transport path or the like, and are fixed during the processing. The flow rate supplies the treatment liquid to the substrate. Therefore, there is also a case where the processing liquid is consumed arbitrarily by supplying the processing liquid excessively to a small-sized substrate or the like. In recent years, in order to process the substrate more economically, it is required to suppress the waste (supply) of the treatment liquid, and it is considered to monitor the contamination (deterioration) of the treatment liquid derived from the treatment tank as in the patent document, so that the supply amount of the treatment liquid is increased. Moderate amount. In other words, there is a certain degree of correlation between the state of contamination (deterioration) of the treatment liquid and the treatment state of the substrate. Therefore, it is considered that the treatment state of the substrate is estimated based on the contamination state of the treatment liquid, and the supply amount of the treatment liquid is controlled based on this. . However, when the contamination state of the treatment liquid derived from the treatment tank is monitored as in the above-mentioned document 1, the treatment liquid that has not passed through the substrate, that is, the surface of the treatment tank is sprayed to the wall surface of the treatment tank, and contains unnecessary contamination components attached to the wall surface. Since the liquid also becomes a monitoring target, it is not possible to sufficiently accurately grasp the processing state of the substrate. The present invention has been developed in view of the above problems, and a first object thereof is to enable a more accurate grasp of the processing state of a substrate, and a second object thereof is to suppress waste (supply) of a processing liquid to reasonably process the substrate. [Means for Solving the Problems] In order to solve the above problems, a substrate processing apparatus according to the present invention includes a processing tank that performs a specific processing on a substrate by supplying a processing liquid to a surface of a substrate by a nozzle member, and the substrate processing apparatus includes a measuring mechanism. The measuring means receives the treatment liquid before the treatment liquid flowing down from the surface of the substrate reaches the bottom of the treatment tank, and sets a specific physical quantity (request item 相关) associated with the deterioration state of the treatment liquid. When the treatment liquid flowing down from the surface of the substrate reaches the bottom of the treatment tank, the treatment liquid is directly received and the physical quantity is measured. According to this configuration, 129948.doc 200903599 can be used since the treatment liquid injected only into the substrate is the measurement target. Exclude excess contaminating components in the measurement object. Therefore, based on the measurement results of the above physical quantities, the processing state of the substrate can be more accurately grasped. More specifically, the substrate processing apparatus includes a support mechanism that supports the substrate in an inclined posture during processing, and the measurement mechanism is disposed below an edge of the lower side of the substrate supported by the support mechanism (request 2). For example, 'the surface is transported in an inclined position—facing the surface of the substrate

供給處理液而進行處理的裝置中,藉由上述構成,能夠良 好地接受順著基板之傾斜而流下之處理液,從而能夠適當 地測定上述物理量。 又,上述測錢構亦可具有:敎部,其與處理液相接 觸而測定上述物理量;以及引導部,其接受自基板流下之 處理液並將該處理液引導至上述測定部(請求項3)。 如此,根據接受自基板流下之處理液並將其引導至測定 部之構成,能夠更可#地使處理液與上述測定部接觸以測 定上述物理量。 再者,上述基板處理裝置較好的是具有供給量控制機 構該供給!控制機構基於上述物理量之測定結果而對朝 基板供給之處理液之供給量進行控制(請求項4)。例如,上 述^給量㈣機構較好的是基於上述敎結果來控制每單 ^間t處理液之供給量(請求項5)。又,供給量控制機構 的疋基於上述測定結果來控制對基板供給處理液之供 ^間後求項6),例如,於—面輸送基板—面對該基板供 液之If形時’較好的是上述供給量控制機構基於上 129948.doc 200903599 述測定結果來控制基板之輸送速度(請求項7)。 亦即,由於處理液之劣化狀態與基板之處理狀況之間具 有相關性,故而如上所述,藉由測定機構來測定上述物理 量,基於該測定結果控制對基板供給處理液之供給量藉 此,能夠供給與基板之處理狀況相符之適量之處理液從 而能夠抑制處理液之浪費。 再者,藉由比較使用前後之處理液之劣化狀態,能夠更 準確地把握基板之處理狀況。因此,當將上述測定機構設 為第一測定機構時,上述裝置進而具有與該第一測定機構 不同之第二測定機構,該第二測定機構測定與供給至基板 之前之處理液相關的上述物理量,上述供給量控制機構基 於該等第一、第二測定機構之測定結果之差來控制上述供 給量(請求項8)。 又,上述基板處理裝置可具有:處理液之循環系統其 將在上述處理槽之處理中經使用且在使用後被回收之處理 液再次用於上述處理槽中之處理;排液機構,其將在該循 環系統内循環之處理液中的在使用後被回收之處理液自該 循%系統排出’·新液導入機構,其向該循環系統内導入新 的處理液,·以及更換控制機構,其基於上述測定機構之測 定結果來控制上述排液機構及新液導入機構,藉此更換上 述循環系統内之處理液(請求項9)。 根據此種構成,於相對處理槽使處理液循環之基板處理 置中此夠基於上述物理量之測定而有效地抑制處理液 之浪費,並且,能夠良好地保持處理液之液質而促進基板 129948.doc 200903599 之處理。 人 …處理裝置具有第一處理 上述處理槽,其甲,該第二處 作為 =類;處理液對在該第-處理槽中結束處理之基板進 处、且,该基板處理裝置具有處理 該供給系統將在上述第二處理梯夕♦ 糸、,光 L…《弟一處理槽之處理中經使用且在使用 後被回收之處理液用於上述第一處理槽中之處理,在上述 Γ 第一處理槽上配置有上述敎機構,上述㈣機構基於上 述測定結果來控制在第—處理槽中對基板供給處理液之供 給量、及在第二處理槽中對基板供給處理液之供給量十之 至少一方(請求項10)。 根據此種構成,於處理槽彼此串聯連接之裝置中,能夠 完全抑制處理液之浪費。 [發明之效果]In the apparatus for processing the processing liquid, the processing liquid which flows down the inclination of the substrate can be satisfactorily received, and the physical quantity can be appropriately measured. Further, the money measuring structure may have a crotch portion that measures the physical quantity in contact with the treatment liquid phase, and a guiding portion that receives the treatment liquid flowing down from the substrate and guides the treatment liquid to the measurement unit (claim item 3) ). As described above, according to the configuration in which the treatment liquid discharged from the substrate is guided to the measurement unit, the treatment liquid can be brought into contact with the measurement unit to measure the physical quantity. Further, it is preferable that the substrate processing apparatus has a supply amount control mechanism for supplying the substrate! The control unit controls the supply amount of the processing liquid supplied to the substrate based on the measurement result of the physical quantity (request item 4). For example, it is preferable that the above-mentioned amount (4) mechanism controls the supply amount of the treatment liquid per unit (request item 5) based on the above-described enthalpy result. Further, the 供给 of the supply amount control means controls the supply of the processing liquid to the substrate based on the measurement result, 6), for example, when the substrate is transported to the surface of the substrate. The supply amount control means controls the conveyance speed of the substrate based on the measurement result of the above 129948.doc 200903599 (request item 7). In other words, since the deterioration state of the processing liquid and the processing state of the substrate are correlated, the physical quantity is measured by the measuring means as described above, and the supply amount of the processing liquid to the substrate is controlled based on the measurement result. It is possible to supply an appropriate amount of the treatment liquid in accordance with the processing state of the substrate, thereby suppressing waste of the treatment liquid. Further, by comparing the deterioration state of the treatment liquid before and after use, it is possible to more accurately grasp the processing state of the substrate. Therefore, when the measuring means is the first measuring means, the apparatus further includes a second measuring means different from the first measuring means, and the second measuring means measures the physical quantity related to the processing liquid before being supplied to the substrate. The supply amount control means controls the supply amount based on the difference between the measurement results of the first and second measurement means (request item 8). Further, the substrate processing apparatus may include: a treatment liquid circulation system that processes the treatment liquid that has been used in the treatment of the treatment tank and is recovered after use, and is reused in the treatment tank; and a liquid discharge mechanism The treatment liquid recovered after use in the treatment liquid circulating in the circulation system is discharged from the circulation system. The new liquid introduction mechanism introduces a new treatment liquid into the circulation system, and replaces the control mechanism. The liquid discharge mechanism and the new liquid introduction mechanism are controlled based on the measurement results of the measurement means, thereby replacing the treatment liquid in the circulation system (request item 9). According to this configuration, it is possible to effectively suppress the waste of the treatment liquid based on the measurement of the physical quantity in the processing of the substrate in which the treatment liquid is circulated in the treatment tank, and the liquid quality of the treatment liquid can be favorably maintained to promote the substrate 129948. Doc 200903599 processing. The processing device has a first processing chamber, wherein the second portion is a class; the processing liquid advances into the substrate that has been processed in the first processing tank, and the substrate processing device has the processing The system will be used in the processing of the first processing tank in the processing of the above-mentioned first processing tank, which is used in the processing of the processing tank and the processing liquid recovered after use in the processing of the second processing ladder. The 敎 mechanism is disposed in a processing tank, and the (4) mechanism controls the supply amount of the processing liquid supplied to the substrate in the first processing tank and the supply amount of the processing liquid to the substrate in the second processing tank based on the measurement result. At least one of them (request item 10). According to this configuration, in the apparatus in which the treatment tanks are connected in series, the waste of the treatment liquid can be completely suppressed. [Effects of the Invention]

根據請求項i〜3之發明,由於自測定對象排除了多餘之 污染成分,故而能夠準確地把握基板之處理狀況。進而, 根據請求項4〜9之發明,由於根據基板之處理狀況來控制 對基板供給處理液之供給量,故而能夠抑制處理液之浪 費’從而能夠經濟地對基板進行處理。 【實施方式】 使用圖式對本發明之較佳實施形態進行說明。 圖1以模式圖概略地表示本發明之基板處理裝置。該圖 所示之基板處理裝置係對例如姓刻處理(藥液處理)後之基 板實施清洗處理者。 129948.doc -10- 200903599 如該圖所示,該基板處理裝置具有第—〜第三之連續之 三個處理槽ιο(第一處理槽10A、第二處理槽i〇b、第三處 理槽H)C)。於各處_10A〜10C中,分別以特定間隔= 有復數個輸送輥12,於由該等輸送輥12支持基板§之狀態 下,將該基板S自圖中左側朝右側輸送。再者,如圖2所 示,各輸送輥12於與基板S之輸送方向正交之方向上傾斜 地設置,藉此,於使基板S相對水平面僅傾斜特定角度㊀之 狀態下進行輸送。 於各處理槽10A〜10C中,分別配備有用以自基板s上方 對該基板S供給淋洗液(本實施形態中為純水)之噴淋噴嘴 14(相當於本發明之噴嘴構件),關於第三處理槽i〇c,以 自基板S之上下兩側供給淋洗液之方式而配備有噴淋喷嘴 14。噴淋喷嘴14具有散布之復數個噴嘴口,自各噴嘴口分 別噴出液滴狀之淋洗液並噴至基板S上。 對各處理槽10A〜10C供給淋洗液之供給系統等係以如下 之方式構成。 於各處理槽10A、l〇B、10C中,分別設置有用以貯存淋 洗液之貯槽20A、20、20B、20C(第一貯槽20A、第二貯槽 B、第三貯槽20C)。於各貯槽20A〜2〇c分別設置有具有泵 23及閥22a之供給用配管22,藉由泵23之動作,自各貯槽 20A〜20C對各自所對應之處理槽1〇A〜1〇c輸送淋洗液,並 將使用後之淋洗液經由分別連接於各處理槽丨〇A〜丨〇c之導 出管24A〜24C而導出。又,於各貯槽2〇A〜2〇c上分別設置 有具有閥26a之淋洗液之廢液管26,於維護時,藉由對間 129948.doc 200903599 26a進行操作,能夠將各貯槽20A〜20C内之淋洗液導出至 圖外之廢液貯槽。 於各處理槽10A〜10C上所設置之上述導出管24a〜24C 中’第三處理槽10C之導出管24C連接於第二處理槽1〇B之 .第二貯槽20B,第二處理槽10B之導出管24B連接於第一處 理槽10A之第一貯槽20A。又’第一處理槽1〇A之導出管 ‘ 24A連接於圖外之廢液貯槽。於第三貯槽2〇c上進而連接 有新液供給管28 ’根據安裝於該新液供給管28上之閥28a 〔之操作’而將新淋洗液自淋洗液供給源3 〇導入至第三貯槽 20C。亦即,於該基板處理裝置中,將新淋洗液自淋洗液 供給源30導入至第三貯槽20C,同時將該淋洗液輸送至第 三處理槽10C,並將自第三處理槽10C導出之使用後之淋 洗液導入至上游側之第二貯槽20B。然後,將該第二貯槽 20B之淋洗液輸送至第二處理槽1〇b中,並將該第二處理 槽10B中所使用之淋洗液進而導入至上游側之第一貯槽 € 20A中’將第一貯槽20A之淋洗液輸送至第一處理槽1〇A之 後’將自第一處理槽10 A導出之淋洗液導入至圖外之廢液 貯槽中。總之,以將於下游側之處理槽中經使用之淋洗液 • 依序汲取至上游侧,並於上游側之處理槽中使用之方式, 構成淋洗液之供給系統’換言之,處理槽i 〇 A〜1 〇c經由該 供給系統而串聯連接。 再者’於以下之說明中,當對貯槽2〇A〜20C提及「上游 側」、「下游側」時,對應於基板S之輸送方向。 於上述處理槽10A〜10C與貯槽20A〜20C中,分別設置有 129948.doc •12· 200903599 用以測定與淋洗液之劣化狀態相關聯之特定之物理量的測 定機構。 具體而言,於各處理槽10A-10C上設置有pH值測定裝置 16(稱為第一 PH值測定裝置16),該pH值測定裝置16直接接 受於處理基板S中沿該基板S流下之淋洗液,即,於自基板 S流下之淋洗液到達槽内之底部之前接受淋洗液而測定其 pH值;另一方面,於各貯槽2〇A〜2〇c中設置有分別測定該 貯槽20A〜20C内之淋洗液之pH值之第二pH值測定裝置%。 如圖1所示,第一 pH值測定裝置16位於處理槽1 〇A〜1 〇c 内之大致中央(基板輸送方向上之大致中央),且如圖2所 不’配置於由輸送輥12以傾斜姿勢支持之基板8之低位側 之端部下方。如該圖所示,該第一 pH值測定裝置丨6具有: 漏斗狀之接液部17(相當於本發明之引導部);以及pH值計 主體1 8(相當於本發明之測定部),其設置於該接液部之i 7 之下方且具有計測頭,由接液部17接受沿基板S流下之淋 洗液並將其引導至pH值計主體18,藉此測定淋洗液之pH 值,然後將與該測定結果相對應之信號輸出至下述之控制 器40。 工 另一方面,第二pH值測定裝置36雖未詳細地圖示,但於 各貯槽20A〜20C内部之特定位置具有計測頭,藉由該計測 頭來測定貯存於各貯槽20A〜20C内之淋洗液之pH值並將 與s亥測定結果相對應之信號輸出至下述之控制器。 再者,該基板處理裝置具有控制基板8之一系列清洗動 作之控制器40(相當於本發明之供給量控制機構)。該控制 129948.doc •13- 200903599 器40以執行邏輯運算之CPU(Central pr〇cessing unit,中央 處理單元)等為主要之要素而構成,驅動輪送輥i2之馬 達、上述泵23、閥22a、26a、28a以及PH值測定裝置16、 ^6等全部電性連接於該控制㈣。繼而,基於上述#值測 疋裝置16、36之測定結果,由該控制器4〇來對上述閥 等進行開閉控制。以下,針對基於該控制器4〇之控制之基 板S之清洗動作的一例進行說明。 作為開始基板s之處理之準備階段,於各貯槽2〇a〜2〇c 中貯存固定量之新液體(新淋洗液)。以如下方切存新液 體:經由新液體供給管28而冑新液體㈣木洗液供給源3〇導 入至第三貯槽20C,該新液體經由圖外之送液管而輸送至 上游側之貯槽20A、20B中。 虽各打槽20A〜20C之準備結束後,驅動輸送輥12而開始 輸送基板S,自上游側以傾斜姿勢輸送經藥液處理後之基 板s。然後,當由配置於第一處理槽1〇A之靠近上游側之^ 外之基板(前端)感應器檢測出基板s的前端時,自第一處 理槽10A内之喷淋喷嘴14噴出淋洗液,開始對基板s供給淋 洗液。藉此,當基板s搬入至第一處理槽10A内時,自噴淋 喷嘴14朝基板S之上表面供給淋洗液,以對基板8實施特定 之清洗處理。再者,於清洗處理中,自基板s之上表面流 下之淋洗液之一部分流入至pH值測定裝置丨6之接液部 17(參照圖2),藉此測定供基板8之處理使用後之淋洗液之 pH值。According to the invention of the claims i to 3, since the unnecessary contamination component is excluded from the measurement object, the processing state of the substrate can be accurately grasped. Further, according to the inventions of claims 4 to 9, since the supply amount of the processing liquid to the substrate is controlled in accordance with the processing state of the substrate, the waste of the processing liquid can be suppressed, and the substrate can be processed economically. [Embodiment] A preferred embodiment of the present invention will be described using the drawings. Fig. 1 schematically shows a substrate processing apparatus of the present invention in a schematic view. The substrate processing apparatus shown in the figure is a cleaning process performed on, for example, a substrate after the surname processing (chemical liquid treatment). 129948.doc -10- 200903599 As shown in the figure, the substrate processing apparatus has three consecutive processing tanks ιο of the first to third (first processing tank 10A, second processing tank i〇b, third processing tank) H) C). In each of the _10A to 10C, a plurality of conveying rollers 12 are respectively provided at a specific interval, and the substrate S is conveyed from the left side to the right side in the state where the substrate § is supported by the conveying rollers 12. Further, as shown in Fig. 2, each of the transport rollers 12 is obliquely disposed in a direction orthogonal to the transport direction of the substrate S, whereby the substrate S is transported while being inclined at a specific angle with respect to the horizontal plane. Each of the processing tanks 10A to 10C is provided with a shower nozzle 14 (corresponding to the nozzle member of the present invention) for supplying the eluent (in the present embodiment, pure water) from the upper side of the substrate s. The third processing tank i〇c is provided with a shower nozzle 14 so as to supply the eluent from the upper and lower sides of the substrate S. The shower nozzle 14 has a plurality of nozzle openings which are dispersed, and a droplet-like eluent is ejected from each nozzle port and sprayed onto the substrate S. The supply system for supplying the eluent to each of the treatment tanks 10A to 10C is configured as follows. Storage tanks 20A, 20, 20B, and 20C (first storage tank 20A, second storage tank B, and third storage tank 20C) for storing the washing liquid are provided in the respective treatment tanks 10A, 10B, and 10C. Each of the storage tanks 20A to 2C is provided with a supply pipe 22 having a pump 23 and a valve 22a, and the pump 23 is operated by the respective storage tanks 20A to 20C for the respective processing tanks 1A to 1〇c. The eluent is discharged, and the eluent after use is led through the outlet tubes 24A to 24C which are respectively connected to the respective treatment tanks A to 丨〇c. Further, a waste liquid pipe 26 having a rinse liquid of the valve 26a is provided in each of the storage tanks 2A, A2, and 2c, and each of the storage tanks 20A can be operated by the operation of the 129948.doc 200903599 26a during maintenance. The eluent in ~20C is exported to the waste storage tank outside the figure. Among the above-mentioned outlet pipes 24a to 24C provided in the respective treatment tanks 10A to 10C, the outlet pipe 24C of the third treatment tank 10C is connected to the second treatment tank 1B, the second storage tank 20B, and the second treatment tank 10B. The outlet pipe 24B is connected to the first storage tank 20A of the first treatment tank 10A. Further, the outlet pipe ‘ 24A of the first treatment tank 1A is connected to the waste liquid storage tank outside the drawing. A new liquid supply pipe 28' is further connected to the third storage tank 2'c, and the new eluent is supplied from the eluent supply source 3 to the valve 28a (operating) attached to the new liquid supply pipe 28. The third storage tank 20C. That is, in the substrate processing apparatus, the new eluent is introduced from the eluent supply source 30 to the third storage tank 20C, and the eluent is transported to the third treatment tank 10C, and from the third treatment tank. The eluent after use of the 10C is introduced into the second storage tank 20B on the upstream side. Then, the eluent of the second storage tank 20B is sent to the second treatment tank 1b, and the eluent used in the second treatment tank 10B is further introduced into the first storage tank 20A on the upstream side. After the eluent of the first storage tank 20A is sent to the first treatment tank 1A, the eluent discharged from the first treatment tank 10A is introduced into the waste liquid storage tank outside the drawing. In short, the eluent used in the treatment tank on the downstream side is sequentially drawn to the upstream side and used in the treatment tank on the upstream side to form a supply system for the eluent liquid. In other words, the treatment tank i 〇A~1 〇c are connected in series via the supply system. In the following description, when the "upstream side" and the "downstream side" are referred to to the storage tanks 2A to 20C, the conveying direction of the substrate S corresponds. In the processing tanks 10A to 10C and the storage tanks 20A to 20C, respectively, 129948.doc • 12· 200903599 is provided for measuring a specific physical quantity associated with the deterioration state of the eluent. Specifically, a pH measuring device 16 (referred to as a first pH measuring device 16) is provided in each of the processing tanks 10A-10C, and the pH measuring device 16 is directly received in the processing substrate S and flows down the substrate S. The eluent, that is, the eluent received from the substrate S before reaching the bottom of the tank, the eluent is measured to determine the pH value; on the other hand, each of the storage tanks 2A to 2〇c is separately measured The second pH value measuring device % of the pH of the eluent in the storage tanks 20A to 20C. As shown in FIG. 1, the first pH measuring device 16 is located substantially at the center of the processing tanks 1A to 1b (substantially centered in the substrate conveying direction), and is disposed in the conveying roller 12 as shown in FIG. Below the end of the lower side of the substrate 8 supported in an inclined posture. As shown in the figure, the first pH measuring device 6 has a funnel-shaped liquid receiving portion 17 (corresponding to the guiding portion of the present invention) and a pH meter main body 18 (corresponding to the measuring portion of the present invention). It is disposed under the i 7 of the liquid contact portion and has a measuring head. The liquid receiving portion 17 receives the eluent flowing down the substrate S and guides it to the pH meter main body 18, thereby measuring the eluent liquid. The pH value is then output to the controller 40 described below corresponding to the measurement result. On the other hand, the second pH measuring device 36 is not shown in detail, but has a measuring head at a specific position inside each of the storage tanks 20A to 20C, and is measured and stored in each of the storage tanks 20A to 20C by the measuring head. The pH of the eluent is output to a controller corresponding to the shai measurement result. Further, the substrate processing apparatus has a controller 40 (corresponding to the supply amount control means of the present invention) for controlling a series of cleaning operations of the substrate 8. The control 129948.doc •13-200903599 40 is constituted by a CPU (Central pr〇cessing unit) or the like which performs logical operations, and drives the motor of the roller i2, the pump 23, and the valve 22a. 26a, 28a, and the pH measuring device 16, ^6, etc. are all electrically connected to the control (4). Then, based on the measurement results of the # value measuring devices 16, 36, the controller 4 is used to open and close the valve. Hereinafter, an example of the cleaning operation of the substrate S based on the control of the controller 4A will be described. As a preparation stage for starting the processing of the substrate s, a fixed amount of a new liquid (new eluent) is stored in each of the storage tanks 2a to 2〇c. The new liquid is cut as follows: the new liquid (four) wood washing liquid supply source 3 is introduced into the third storage tank 20C via the new liquid supply pipe 28, and the new liquid is transported to the storage tank on the upstream side via the liquid supply pipe outside the drawing. 20A, 20B. After the preparation of the respective grooves 20A to 20C is completed, the transport roller 12 is driven to start transporting the substrate S, and the substrate s after the chemical liquid treatment is transported from the upstream side in an inclined posture. Then, when the front end of the substrate s is detected by the substrate (front end) sensor disposed on the upstream side of the first processing tank 1A, the shower nozzle 14 in the first processing tank 10A is ejected and rinsed. The liquid starts to supply the eluent to the substrate s. Thereby, when the substrate s is carried into the first processing tank 10A, the eluent is supplied from the shower nozzle 14 to the upper surface of the substrate S to perform a specific cleaning process on the substrate 8. Further, in the cleaning process, a part of the eluent flowing down from the upper surface of the substrate s flows into the liquid contact portion 17 of the pH measuring device 6 (see FIG. 2), thereby measuring the use of the substrate 8 after use. The pH of the eluent.

繼而,進一步輸送基板S,當由配置於第一處理槽丨0A I29948.doc •14- 200903599 内之下游端附近之圖外之基板(後端)感應器檢測出基板s 的後端時’停止自喷淋噴嘴14供給清洗液。 經過第一處理槽10A後之基板S進而藉由輸送輥12之驅 動而依序輸送至第二處理槽10B、第三處理槽i〇c,於該 等處理槽10B、10C中,藉由對基板S之上表面供給淋洗液 而同樣地實施清洗處理。此時,於各處理槽10B、i〇c 中,亦與第一處理槽10A同樣,於處理中,藉由pH值測定 裝置16來測定自基板8流下之淋洗液之pH值。 如此,當基板S經過各處理槽i〇A〜10C後,對該基板8進 行之一系列之清洗處理結束。雖已省略說明,但於第二、 第三各處理槽10B、loc中,亦係基於由配置於處理槽 10B、10C之靠近上游側之基板(前端)感應器、以及配置於 各處理槽10B、10C内之下游端附近之基板(後端)感應器進 行的對基板S之檢測,而控制開始供給以及停止供給淋洗 液。Then, the substrate S is further transported, and is stopped when the substrate (back end) sensor disposed outside the downstream end of the first processing tank 丨0A I29948.doc •14-200903599 detects the rear end of the substrate s The cleaning liquid is supplied from the shower nozzle 14. The substrate S after passing through the first processing tank 10A is sequentially transported to the second processing tank 10B and the third processing tank i〇c by the driving of the conveying roller 12, and in the processing tanks 10B and 10C, by the pair The eluent is supplied to the upper surface of the substrate S, and the cleaning treatment is performed in the same manner. At this time, in each of the treatment tanks 10B and i〇c, similarly to the first treatment tank 10A, the pH value of the eluent flowing down from the substrate 8 is measured by the pH measuring device 16 during the treatment. Thus, after the substrate S passes through the respective processing tanks i 〇 A to 10C, the cleaning process of one of the substrates 8 is completed. Although the description has been omitted, the second and third processing tanks 10B and loc are also disposed on the substrate (front end) sensor disposed on the upstream side of the processing tanks 10B and 10C, and in the respective processing tanks 10B. The detection of the substrate S by the substrate (back end) sensor near the downstream end in 10C, and the control starts to supply and the supply of the eluent is stopped.

再者,於此種基板s之清洗處理中,基於上述pH值測定 裝置16之測定結果,以如下之方式控制對各處理槽 10A〜l〇c中之基板8供給淋洗液之供給量。亦即,於對蝕 刻處理(藥液處理)後之基板s實施清洗處理(使用純水作為 =洗液之清洗處理)之上述裝置中,在清洗處理中,用以 清洗基板S之使用後之淋洗液之pH值隨處理之進行而變 化。具體而言’於剛開始處理後,淋洗液之pH值高,隨著 處理之進行’ pH值降低。因此,於上述控制器4〇中預先儲 存有針對各處理槽10A〜10C之與基準清洗等級相對應之pH 129948.doc 200903599 值(稱為基準值),運算出各處理槽10A〜1〇c中之測定pH值 (例如特定時間之平均值)與上述基準值之差,基於該結果 ,控制對各處理槽10A〜10C中之基板8供給淋洗液之供給 量。具體而言,於測定pH值高出基準值固定等級以上之情 形時,即,於未充分地對基板S進行清洗之情形時,控^ 閥22a之開度等,使得每單位時間之淋洗液之供給量僅增 加特定流量。相反,於pH值低於基準值固定等級以上之^ 形時,即,於過分地對基板S進行了清洗之情形時,控^ 閥22a之開度等,使得淋洗液之每單位時間之供給量僅減 少特定流量。以固定之週期或者根據操作人員之輸入操 作,來進行此種對於基板S供給淋洗液之供給量之控制。' 再者,於上述泵23例如為以變頻馬達為驅動源之泵之情形 日寸,取代控制上述閥22a之開度,或於控制該開度之同時 使上述馬達之轉速變化,藉此控制朝喷淋噴嘴14供給淋洗 液之供給流量。 ' 另一方面,於基板s之清洗處理中,藉由第二pH值測定 裝置36來測定各貯槽20A〜20C内之淋洗液之1311值。於控制 器40中,與上述流量控制用之基準值不同地,針對各貯槽 20A〜20C而預先儲存有液體管理用之?11值之基準值於任 一個貯槽20A〜20C中,若測定pH值超過基準值,亦即,若 各貯槽20A〜20C内之淋洗液劣化至固定等級以上則該貯 槽20A〜20C内之淋洗液之一部分經由廢液管%而被廢棄, 或者經由圖外之送液管輸送至上游侧之貯槽中,另一方 面,自下游側之貯槽將污染少之淋洗液經由送液管而輸送 129948.doc • 16 - 200903599 至該貯槽,藉此恢復淋洗液之功能。 如上所述’於上述實施形態之基板處理裝置中,由第_ PH值測定裝置16測定與基板s之處理狀況有相關性之使用 後之淋洗液之pH值,當根據該測定值判斷未充分地對基板 S進行清洗時(當測定pH值高於基準值固定等級以上時), 對朝基板S供給淋洗液之供給量進行增量修正;相反,當 判斷過分地對基板S進行了清洗時(當測定pH值低於基準值 固定等級以上時),對朝基板S供給淋洗液之供給量進行減 量修正,因而能夠根據基板S之處理狀況,於對基板s供給 必要充分之淋洗液之同時進行清洗處理。因此,能夠抑制 淋洗液之浪費,從而能夠經濟地對基板S進行處理。 尤其於該裝置中,如上所述,因由pH值測定裝置1 6直接 接受自基板S流下之淋洗液而測定其pH值,故而存在如下 優點,即,能夠對應於實際之基板s之處理狀況而準確地 控制對基板S供給淋洗液之供給量。亦即,作為其他方 法,亦考慮測定經由導出管24A〜24C而自各處理槽 10A〜10C導出之淋洗液ipH值,但於該情形時,包含未注 入至基板S而落下至處理槽10A〜10c之内底部等,並附著 於該内底部等之多餘的污染成分之淋洗液亦成為p Η值之測 疋對象因此,測定結果並未成為與實際之基板s之處理 狀況相對應之值,難以根據基板8之處理狀況來準確地控 制淋洗液之供給量,然而,相對於此,根據上述實施形態 之構成由於僅實際注入至基板S而供處理之淋洗液成為 pH值之測定對象而測定值之可靠性高,因而能夠對應 129948.doc 17 200903599 於實際之基板s之處理狀況而準確地控制對基板8供給淋洗 液之供給量。 其次,使用圖3來說明本發明之第二實施形態。 圖3以模式圖概略地表示第二實施形態之基板處理裝 置。該圖所示之基板處理裝置之構成,於以下方面與第一 實施形態之基板處理裝置不同,除此以外之構成基本上與 第一實施形態共同。因此,對與第一實施形態共同之部分 標上相同之符號並省略說明’僅對不同點進行詳細說明 (這點對下述之第三實施形態亦相同)。 首先’於該裝置中設置有導出管24A〜24C,以便將於各 處理槽10A〜10C中經使用之淋洗液返回至分別與各處理槽 10A〜10C相對應之貯槽2〇A〜2〇c中。藉此,若為第一處理 槽10A,則將第一貯槽2〇a之淋洗液輸送至第一處理槽1〇A 而供給至基板s,並將使用後之淋洗液自第一處理槽1〇A回 收至第一貯槽20A,於該情形時,以於第一處理槽1〇A與 第一貯槽20A之間使淋洗液循環之同時進行基板s之清洗處 理之方式,構成淋洗液之供給系統。第二處理槽10B、第 二處理槽10C亦同樣。 又’於第三貯槽20C與第二貯槽20B之間,設置有用以 將第三貯槽20C内之淋洗液輸送至第二貯槽20B且具有录 32a之第—送液管32,進而,於第二貯槽2〇b與第一貯槽 20A之間’設置有用以將第二貯槽2〇B内之淋洗液輸送至 第一貯槽20A且具有泵34a之第二送液管34 »藉此,能夠自 下游侧依序對上游側之貯槽輸送淋洗液。 129948.doc -18- 200903599 亦即’於第二實施%態之基板處理裝置中,冑新淋洗液 自淋洗液供給源30導入至第三貯槽2〇c之同時,將該淋洗 液經由上述送液管32、34而依序輸送至上游側之貯槽 20A、20B,藉此於將淋洗液貯存於各貯槽2〇A〜2〇c之後, 如上所述,於各處理槽10A〜1〇c與各自所對應之貯槽 20A〜20C之間使淋洗液循環之同時,進行基板8之清洗處 理,根據需要,將第一貯槽20A之淋洗液經由廢液管%而 廢棄,同時將下游側之貯槽2〇8、2〇c之淋洗液經由送液 管32、34而依序輸送至上游侧。 於該第二實施形態之基板處理裝置中,基於?11值測定裝 置16 ' 36之測定結果,由上述控制器4〇以如下之方式對上 述閥22a等進行控制。 於上述控制器40中,作為與各處理槽1〇A〜1〇c之基準清 洗等級相對應之pH值,儲存有分別與使用前之淋洗液之 pH值及使用後之淋洗液之pH值之差相對之基準值,亦 即,與第二pH值測定裝置36(相當於本發明之第二測定機 構)之測定值及第一 pH值測定裝置〗6(相當於本發明之第一 測定機構)之測定值之差相對之基準值。並且,於清洗處 理中,以固定之週期或基於操作人員之輸人操作,對每: 處理槽10A〜10C運算出使用前、使用後淋洗液之pH值基 於攻結果,控制對各處理槽〗〇A〜〗〇c中之基板§供給淋洗 液之供給量。再者,所謂「使用前」、「使用後」,係指各 處理槽10A〜10C _之淋洗液之「使用前」、「使用後」。Further, in the cleaning process of the substrate s, based on the measurement result of the pH measuring device 16, the supply amount of the eluent to the substrate 8 in each of the processing tanks 10A to 10c is controlled as follows. That is, in the above apparatus for performing the cleaning treatment (using pure water as the cleaning treatment of the washing liquid) on the substrate s after the etching treatment (chemical liquid treatment), in the cleaning processing, after the use of the substrate S for cleaning The pH of the eluent changes as the treatment progresses. Specifically, the pH of the eluent was high immediately after the start of the treatment, and the pH value decreased as the treatment progressed. Therefore, in the controller 4, the pH 129948.doc 200903599 value (referred to as a reference value) corresponding to the reference cleaning level for each of the processing tanks 10A to 10C is stored in advance, and each processing tank 10A to 1c is calculated. The difference between the measured pH value (for example, the average value of the specific time) and the above-described reference value is based on the result, and the supply amount of the eluent to the substrate 8 in each of the processing tanks 10A to 10C is controlled. Specifically, when the pH value is higher than the reference value by a fixed level or higher, that is, when the substrate S is not sufficiently cleaned, the opening degree of the valve 22a is controlled so that the rinsing per unit time is performed. The supply of liquid only increases the specific flow rate. On the other hand, when the pH is lower than the fixed value of the reference value, that is, when the substrate S is excessively cleaned, the opening degree of the valve 22a is controlled so that the eluent per unit time The supply is only reduced by a specific flow. This control of the supply amount of the eluent to the substrate S is performed in a fixed cycle or in accordance with an input operation of the operator. Further, in the case where the pump 23 is, for example, a pump that uses a variable frequency motor as a drive source, instead of controlling the opening degree of the valve 22a, or controlling the opening degree, the rotation speed of the motor is changed, thereby controlling The supply flow rate of the eluent is supplied to the shower nozzle 14. On the other hand, in the cleaning process of the substrate s, the 1311 value of the eluent in each of the storage tanks 20A to 20C is measured by the second pH measuring device 36. In the controller 40, different from the reference value for the flow rate control, is the liquid management for each of the storage tanks 20A to 20C stored in advance? The reference value of the value of 11 is in any one of the storage tanks 20A to 20C, and if the measured pH value exceeds the reference value, that is, if the eluent in each of the storage tanks 20A to 20C deteriorates to a fixed level or higher, the inside of the storage tanks 20A to 20C is drenched. One part of the washing liquid is discarded through the waste liquid pipe %, or is sent to the storage tank on the upstream side via the liquid supply pipe outside the drawing, and the eluent liquid with less pollution is passed through the liquid supply pipe from the storage tank on the downstream side. Transfer 129948.doc • 16 - 200903599 to the tank to restore the eluent function. As described above, in the substrate processing apparatus of the above-described embodiment, the pH value of the eluent after use, which is correlated with the processing state of the substrate s, is measured by the _PH value measuring device 16, and it is judged based on the measured value. When the substrate S is sufficiently cleaned (when the measured pH value is higher than the reference value by a fixed level or more), the supply amount of the eluent to the substrate S is incrementally corrected; on the contrary, when it is judged that the substrate S is excessively performed In the case of cleaning (when the measured pH value is lower than the fixed value of the reference value), the amount of supply of the eluent to the substrate S is reduced, so that it is possible to supply the substrate s with sufficient necessity depending on the processing state of the substrate S. Wash the solution while washing. Therefore, it is possible to suppress the waste of the eluent, and it is possible to economically process the substrate S. In particular, in the apparatus, as described above, since the pH value is directly measured by the pH measuring device 16 to measure the pH of the eluent flowing down from the substrate S, there is an advantage that it can correspond to the actual processing condition of the substrate s. The amount of supply of the eluent to the substrate S is accurately controlled. That is, as another method, it is also considered to measure the eluent ipH value derived from each of the processing tanks 10A to 10C via the lead-out tubes 24A to 24C, but in this case, it is not injected into the substrate S and falls to the processing tank 10A. The eluent which adheres to the bottom of the inside of the 10c and the like, and the excess contaminating component attached to the inner bottom or the like also becomes the target of the p Η value. Therefore, the measurement result does not become a value corresponding to the actual processing condition of the substrate s. It is difficult to accurately control the supply amount of the eluent according to the processing state of the substrate 8. However, according to the configuration of the above-described embodiment, the eluent to be treated is actually only injected into the substrate S. Since the object has a high reliability of the measured value, it is possible to accurately control the supply amount of the eluent to the substrate 8 in accordance with the processing state of the actual substrate s in 129948.doc 17 200903599. Next, a second embodiment of the present invention will be described using FIG. 3. Fig. 3 is a schematic view showing a substrate processing apparatus according to a second embodiment. The configuration of the substrate processing apparatus shown in the figure is different from the substrate processing apparatus of the first embodiment in the following points, and the other configuration is basically the same as that of the first embodiment. Therefore, the same portions as those in the first embodiment will be denoted by the same reference numerals, and the description will be omitted. Only the differences will be described in detail (this is also the same for the third embodiment described below). First, the outlet tubes 24A to 24C are provided in the apparatus so that the eluent used in each of the treatment tanks 10A to 10C is returned to the storage tanks 2A to 2A corresponding to the respective treatment tanks 10A to 10C. c. Therefore, if it is the first treatment tank 10A, the eluent of the first storage tank 2A is transported to the first treatment tank 1A and supplied to the substrate s, and the eluent after use is processed from the first treatment. The tank 1A is recovered to the first storage tank 20A. In this case, the cleaning process of the substrate s is performed while the eluent is circulated between the first treatment tank 1A and the first storage tank 20A. The supply system of the lotion. The same applies to the second treatment tank 10B and the second treatment tank 10C. Further, between the third storage tank 20C and the second storage tank 20B, a first liquid supply pipe 32 for transporting the eluent in the third storage tank 20C to the second storage tank 20B and having the record 32a is provided. Between the two storage tanks 2〇b and the first storage tank 20A, a second liquid supply pipe 34 is provided for conveying the eluent in the second storage tank 2B to the first storage tank 20A and having the pump 34a. The eluent is transported from the downstream side to the storage tank on the upstream side. 129948.doc -18- 200903599 That is, in the second embodiment of the substrate processing apparatus, the new eluent is introduced into the third storage tank 2〇c from the eluent supply source 30, and the eluent is simultaneously The liquid supply tubes 32 and 34 are sequentially transported to the storage tanks 20A and 20B on the upstream side, thereby storing the eluent in each of the storage tanks 2A to 2〇c, as described above, in each of the treatment tanks 10A. Between 1 and 〇c and the corresponding storage tanks 20A to 20C, the eluent is circulated, and the substrate 8 is cleaned. If necessary, the eluent of the first storage tank 20A is discarded through the waste liquid pipe %. At the same time, the eluent of the storage tanks 2〇8, 2〇c on the downstream side is sequentially conveyed to the upstream side via the liquid supply pipes 32 and 34. In the substrate processing apparatus of the second embodiment, based on ? As a result of the measurement by the 11-value measuring device 16'36, the above-described controller 4A controls the above-described valve 22a and the like in the following manner. In the controller 40, as the pH value corresponding to the reference cleaning level of each of the processing tanks 1A1 to 1〇c, the pH value of the eluent before use and the eluent after use are stored. The difference between the pH values and the reference value, that is, the measured value of the second pH measuring device 36 (corresponding to the second measuring means of the present invention) and the first pH measuring device 6 (corresponding to the present invention) The difference between the measured values of a measuring mechanism is relative to the reference value. Further, in the cleaning process, the pH value of the eluent before and after use is calculated for each treatment tank 10A to 10C in a fixed cycle or based on an operator's input operation, and is controlled based on the attack result. 〇A~〗 〇c The substrate § supply the supply of eluent. In addition, "before use" and "after use" refer to "before use" and "after use" of the eluent of each of the treatment tanks 10A to 10C_.

例如,若以第一處理槽丨0A為例進行說明,則運算由pH 129948.doc -19- 200903599 值測定裝置16測定之淋洗液(使用後之淋洗液)之?1^值、與 由第一 pH值測疋裝置36測定之第一貯槽2〇A内之淋洗液(使 用前之淋洗液)之pH值之差,當該值相對上述基準值大固 定等級以上時,’亦#,當判斷未充分地對基板S進行清洗 時,控制閥22a之開度,使得淋洗液之每單位時間之供給 量僅增加特定流量。相反,當上述運算值相對上述基準值 低固定等級以上時,亦即,當判斷過分地對基板8進行了 清洗時,控制閥22a之開度等,使得淋洗液之每單位時間 Γ 之供給量僅減少特定流量。藉此,對基板S供給與該基板s 之處理狀況相稱之必要充分之淋洗液。再者’雖於此處以 第一處理槽10A之處理為例進行了說明,但第二處理槽 10B及第三處理槽i〇c中之處理亦同樣。 亦即,於如上述般,在各處理槽1〇A〜1〇c與各自所對應 之貯槽20A〜20C之間使淋洗液循環之同時進行基板s之生 洗處理之第二實施形態的基板處理裝置中,自噴淋喷嘴Μ 喷出之淋洗液會隨時間而劣化。因此,如淋洗液並不隨時 ^ 間劣化之第一實施形態般,僅根據ΡΗ值測定裝置16之測定 結果,則難以準確地把握基板S之處理狀況。因此,於第 二實施形態中,基於使用前、使用後之淋洗液之pH值之變 化’控制對基板S供給淋洗液之供給量。因此,根據該第 二實施形態之基板處理裝置,於如上述般,在各處理样 10A〜10C與各自所對應之貯槽20A〜2〇c之間使淋洗液循^ 之同時進行基板S之清洗處理的裝置構成中,能夠享受與 第一實施形態之裝置同樣之效果’即’能夠抑制淋洗 129948.doc -20- 200903599 浪費,從而能夠經濟地對基板s進行處理。 其次,使用圖4來說明本發明之第三實施形態。 圖4以模式圖概略地表示第三實施形態之基板處理裝 置。該圖所不之基板處理裝置設置有導出管ΜΑ、24B, 以便將於第-、第二處理槽1〇A、1GB中經使用之淋洗液 返回至與各處理槽10A、1〇B分別對應之貯槽2〇a、2〇b 中。藉此,若為第一處理槽1〇A,則將第一貯槽2〇A之淋 洗液輸送至第一處理貯槽2〇A而供給至基板s,並且將使用 後之淋洗液自第一處理槽1〇A回收至第一貯槽2〇A中,於 該情形時,能夠於第一處理槽1〇A與第一貯槽2〇A之間使 淋洗液循環,同時進行基板s之清洗處理。對第二處理槽 10 B亦同樣。 於各導出管24A、24B上分別設置有閥25,並且設置有 自該閥25之上游側分支之分支管24A1、24B,。自第一處理 槽10A之導出管24A分支之分支管24AI連接於圖外之廢液 貯槽’另一方面,自第二處理槽1〇B之導出管24B分支之 分支管24B’連接於第一貯槽2〇A。亦即,根據需要而對閥 25進行操作,藉此能夠將自第一處理槽10A導出之使用後 之淋洗液經由分支管24A,而導出至廢液貯槽中,又,能夠 將自第—處理槽丨〇B導出之淋洗液經由分支管My而輸送 至第一貯槽20A中。於該實施形態中,上述分支管24A,' 24B1以及閥25等相當於本發明之排液機構。 再者,於該裝置中,並未設置與第三處理槽1〇c相對應 之弟一貯槽2〇c,而直接經由供給用配管22,將新液體自 129948.doc -21 - 200903599 淋洗液供給源3〇供給至第三處理槽10C。又,於與第一、 第二處理槽10A、10B相對應之各貯槽20A、20B上分別連 接有具有閥39a之新液供給管39(相當於本發明之新液導入 機構),能夠將新液體直接自淋洗液供給源3〇導入至各貯 槽 20A、20B。 亦即,於第二實施方式之基板處理裝置中,將淋洗液自For example, if the first processing tank 丨0A is taken as an example, the eluent (the eluent after use) measured by the pH 129948.doc -19-200903599 value measuring device 16 is calculated. 1^ value, the difference between the pH value of the eluent (pre-use eluent) in the first storage tank 2A measured by the first pH measuring device 36, when the value is larger than the above reference value When the level is equal to or higher than the level, when it is judged that the substrate S is not sufficiently cleaned, the opening degree of the valve 22a is controlled so that the supply amount per unit time of the eluent is increased only by the specific flow rate. On the other hand, when the calculated value is lower than the reference value by a fixed level or higher, that is, when it is judged that the substrate 8 is excessively cleaned, the opening degree of the valve 22a or the like is controlled so that the supply of the eluent per unit time Γ is supplied. The amount only reduces the specific traffic. Thereby, the substrate S is supplied with a necessary eluent which is commensurate with the processing state of the substrate s. Further, although the processing of the first processing tank 10A has been described here as an example, the processing in the second processing tank 10B and the third processing tank i〇c is also the same. In other words, as described above, in the second embodiment in which the eluent is circulated between the respective processing tanks 1A to 1A and the corresponding storage tanks 20A to 20C, the substrate s is subjected to the raw-washing treatment. In the substrate processing apparatus, the eluent ejected from the shower nozzle 劣化 deteriorates with time. Therefore, as in the first embodiment in which the eluent is not deteriorated at any time, it is difficult to accurately grasp the processing state of the substrate S based only on the measurement result of the enthalpy measuring device 16. Therefore, in the second embodiment, the supply amount of the eluent to the substrate S is controlled based on the change in pH of the eluent before use and after use. Therefore, according to the substrate processing apparatus of the second embodiment, as described above, the eluent is passed between the respective processing samples 10A to 10C and the corresponding storage tanks 20A to 2C, and the substrate S is simultaneously performed. In the device configuration of the cleaning process, it is possible to enjoy the same effect as the device of the first embodiment, that is, it is possible to suppress the waste of the rinsing 129948.doc -20-200903599, and it is possible to economically process the substrate s. Next, a third embodiment of the present invention will be described using FIG. Fig. 4 is a schematic view showing a substrate processing apparatus according to a third embodiment. The substrate processing apparatus not shown in the figure is provided with a discharge tube ΜΑ, 24B, so that the eluent used in the first and second treatment tanks 1A, 1GB is returned to the respective treatment tanks 10A, 1B, respectively. Corresponding storage tanks 2〇a, 2〇b. Therefore, if it is the first treatment tank 1A, the eluent of the first storage tank 2A is sent to the first treatment tank 2A and supplied to the substrate s, and the eluent after use is used. A treatment tank 1A is recovered into the first storage tank 2A, in which case the eluent can be circulated between the first treatment tank 1A and the first storage tank 2A, while the substrate s is Cleaning treatment. The same applies to the second processing tank 10B. A valve 25 is provided on each of the outlet pipes 24A, 24B, and branch pipes 24A1, 24B branched from the upstream side of the valve 25 are provided. The branch pipe 24AI branched from the outlet pipe 24A of the first treatment tank 10A is connected to the waste liquid storage tank outside the drawing. On the other hand, the branch pipe 24B' branched from the outlet pipe 24B of the second treatment tank 1B is connected to the first Storage tank 2〇A. That is, the valve 25 is operated as needed, whereby the used eluent discharged from the first treatment tank 10A can be led to the waste liquid storage tank via the branch pipe 24A, and The eluent from which the treatment tank B is derived is sent to the first storage tank 20A via the branch pipe My. In this embodiment, the branch pipes 24A, '24B1, the valve 25, and the like correspond to the liquid discharge mechanism of the present invention. Further, in the apparatus, the storage tank 2〇c corresponding to the third treatment tank 1〇c is not provided, and the new liquid is directly rinsed from the 129948.doc -21 - 200903599 via the supply piping 22. The liquid supply source 3 is supplied to the third processing tank 10C. Further, a new liquid supply pipe 39 having a valve 39a (corresponding to the new liquid introduction mechanism of the present invention) is connected to each of the storage tanks 20A and 20B corresponding to the first and second treatment tanks 10A and 10B, and new The liquid is directly introduced into each of the storage tanks 20A and 20B from the eluent supply source 3〇. That is, in the substrate processing apparatus of the second embodiment, the eluent is self-cleaned

淋洗液供給源30分別貯存於第一貯槽2〇A與第二貯槽2〇B 之後、,星由各供給用配管22而朝第一〜第三處槽丨〇A〜丨〇cThe eluent supply source 30 is stored in the first storage tank 2A and the second storage tank 2B, respectively, and the stars are supplied from the respective supply pipes 22 to the first to third slots 丨〇A to 丨〇c.

分別輸送淋洗液’以進行基板8之清洗處理,此時,於第 一、第二各處理槽10A、丨⑽中,於與對應之貯槽2〇A、 廳之間使淋洗液循環之同時進行基板s之清洗處理,根據 扁要將自第一處理槽10B導出之淋洗液經由導出管 謂(分支管24B,)而輸送至第一貯槽2〇A,並且,將自第一 處里槽10A導出之淋洗液經由上述導出管2从(分支管“A,) 而廢棄。The eluent is separately transported to perform the cleaning process of the substrate 8. At this time, in the first and second processing tanks 10A and 10(10), the eluent is circulated between the corresponding storage tanks 2A and the hall. Simultaneously, the cleaning process of the substrate s is performed, and the eluent discharged from the first processing tank 10B is transported to the first storage tank 2A via the outlet pipe (the branch pipe 24B) according to the flat, and will be from the first place. The eluent derived from the inner tank 10A is discarded from the branch pipe "A," via the above-described outlet pipe 2.

於該裝置中, 上述控制器40以 3 9a等進行控制。 基於PH值測定裝置16、36之測定結果, 如下之方式對輸送輥12之驅動以及閥25 由 亦即’運算出各處理槽1〇A〜1〇c中之帛一阳值測定裝置 ⑽敎PH值與其基準值之差,當測定PH值高於基準值 ^ "、上^ (未充分地對基板s進行時),使輸送輥12 輸送基板s之輸送速度降低至固定速度為止,藉此,基板s 之清洗時間相對於標準時間被延長,對基板供給淋洗液之 供給W增加。相反,當測定pH值低於基準值固定等級以 129948.doc -22- 200903599 上時(過分地對基板S進行了清洗時),使輸送輥12輸送基 板S之輸送速度僅上升固定速度’藉此縮短基板§之清洗時 間,減少對基板8供給淋洗液之供給量。 又’於基板S之清洗處理中,當於第一處理槽10A中, 第一 PH值測定裝置16之測定pH值超過其基準值(液體管理 用之特定之pH值)時’自該第一處理槽1〇A導出之淋洗液經 由上述導出管24A(分支管24A,)而被廢棄。同樣,當於第 二處理槽10B中,測定pH值超過其基準值時,自第二處理 槽1〇B導出之淋洗液經由導出管24B(分支管24B')而輸送至 第貯槽20A中。X,經由新液供給管39而將新液體導入 至各貯槽20A、20B。藉此,可恢復使淋洗液於各處理槽 1 〇A 10B中循環之功能。亦即,於該實施形態中,上述 控制器4G相當於本發明之供給量控制機構及更換控制機 構。 根據如上所述之第三實施形態之裝置,當過分地對基板 S進行了清洗時,將基板3之輸送速度僅提高固定速度藉 此抑制對基板S供給淋洗液之供給量,相反,當未充分地 對基板δ進行清洗時,將基板S之輸送速度僅下降固定速 度,藉此增加對基板s供給淋洗液之供給量,因此,與第 一實施形態同樣,能夠於將與基板s之處理狀況相應之必 要充分之淋洗液供給至基板s之同時進行清洗處理,因而 能夠抑制淋洗液之浪費,從而能夠經濟地對基板s進行處 理。又,由於以上述方式,根據基板s之清洗處理之進展 情況而提高基板S之輸送速度,故而與總是以固定速度來 129948.doc -23- 200903599 輸送基板s之同時實施清洗處理之情形相比,有能夠提高 產量之優點。 再者,以上所說明之第一〜第三實施形態之基板處理裝 置係本發明之基板處理裝置之較佳之實施形態的一例,其 具體構成於不脫離本發明宗旨之範圍内可進行適當變更。 例如,於實施形態中,以一面由接液部】7接受自基板s 流下之淋洗液,一面將淋洗液引導至pH值計主體丨8内之方 式’構成第一 pH值測定裝置16,但當然亦可省略接液部 17,而直接由該PH值計主體18接受自基板s流下之淋洗 液,並測定pH值。總之,只要可於自基板s流下之淋洗液 到達處理槽10A〜10C之底部之前測定該淋洗液之pH值即 可。然而,於使用有如上述實施形態之第一 pH值測定裝置 16之情开> 日守,即使當淋洗液沿基板s稀疏地流下時,亦能 夠使淋洗液可靠地與pH值計主體18接觸,因而能夠更可靠 地測定pH值。 再者,於實施形態中,基於淋洗液之劣化程度來把握基 板s之處理狀況,如上所述,藉由測定淋洗液之pH值來檢 測淋洗液之劣化程度,但當然,只要是與淋洗液之劣化程 度相關聯之物理量,則亦可檢測除?11值以外之物理量。例 如,亦可測定淋洗液之比電阻值或導電率。 又,於第一實施形態中,基於第一處理槽1〇A2pH值之 測疋結果,來控制於該第一處理槽丨〇A中對基板§供給淋洗 液之供給量,但例如亦可不於第一處理槽1〇A中進行淋洗 液之供給量之控制,或者對第—處理槽丨〇 A中之淋洗液之 129948.doc -24· 200903599 供給量進行控制,同時基於第一處理槽10A之pH值之測定 結果,控制於下游側之處理槽10B、10C中對基板S供給淋 洗液之供給量。具體而言,當判斷於第一處理槽1〇Α中, 過刀地對基板s進行了清洗時(pH之測定值低於基準值固定 等級以上時),可對在處理槽10B、1〇c中供給至基板s之淋 洗液之供給量進行減量修正,或者省略處理槽1 0B、1 0C 中之任一個處理(亦即,不供給淋洗液而僅使基板s經 過)。總之,亦可基於在上游側處理槽中之淋洗液之1)11值 之測定結果,來控制下游側處理槽之淋洗液之供給量等。 該方面對第二、第三實施形態亦同樣。 又,實施形態係,將本發明應用於在輸送基板s之同時 朝其上表面供給淋洗液之類型之基板處理裝置中的例子, 但當然,於靜止之狀態下朝基板8供給淋洗液以進行清洗 處理’於清洗結束之後,將基板s輸送至下游側,對此種 類型之基板處理裝置亦能夠應用本發明。於該情形時,可 由PH值測定裝置來測定自基板S流下之淋洗液之1)11值,當 該測定值降低至認為基板S之清洗已結束之固定等級為止 時’停止淋洗液之供給並搬出基板S。藉此,由於能夠將 淋洗液之消耗量以及基板S之停止時間抑制於所需之最小 限度’故而能夠經濟且有效地進行基板s之清洗處理。尤 其關於第三處理槽l〇C,若以上述方式進行處理,則能夠 預先避免出現將清洗處理不充分之基板s搬出至下游側這 樣之問題,其結果為,具有能夠進一步提高清洗處理之可 靠性之優點。 129948.doc -25- 200903599 又,為了根據清洗處理之進展程度來增減對基板s供給 淋二液之供給量’於第一、第二實施形態中,控制淋洗液 之母早位時間之供給量’又,於第三實施形態中,控制基 板s之輸送速度(基板s之處理時間),但當然,亦可藉由控 制來自切噴嘴14之淋洗液之噴出量、與基板8之輸送速 度此兩者,來使對基板s供給淋洗液之供給量增減。 又,於實施形態中,作為本發明之應用例,針對對蝕刻 處理後之基板S實施清洗處理之基板處理裝置進行了說 月但本發明亦能夠應用於對例如抗蝕皮膜剝離處理後之 基板S進行清洗之裝置。又,除於以上述方式使淋洗液沿 基板S流下之同時,實施清洗處理之裝置以外,本發明亦 能夠應用於在使藥液沿基板s流下之同時進行藥液處理之 裝置又,除了如實施形態般,於朝傾斜姿勢之基板8供 給處理液(清洗液)之同時進行處理之裝置以外,本發明亦 能夠應用於在朝水平姿勢或垂直姿勢之基板8供給處理液 之同時實施處理之裝置。 【圖式簡單說明】 圖1係表示本發明之基板處理裝置(第一實施方式)之模 式圖。 圖2係表示各處理槽中之基板與第—pH值㈣定裝置之位 置關係以及第一 PH值測定裝置之構成的處理槽之内部側面 圖。 圖3係表示本發明之基板處理裝置(第二實施方式)之模 式圖。 129948.doc -26- 200903599 圖4係表示本發明之基板處理裝置(第三實施方式)之模 式圖。 【主要元件符號說明】 10A 第一處理槽 10B 第二處理槽 10C 第三處理槽 12 輸送輥 14 喷淋喷嘴 16 ' 36 pH值測定裝置 17 接液部 18 pH值計主體 20A 第一貯槽 20B 第二貯槽 20C 第三貯槽 22 供給用配管 40 控制器 129948.doc -27-In the device, the controller 40 is controlled by a 39a or the like. Based on the measurement results of the pH measuring devices 16, 36, the driving of the conveying roller 12 and the valve 25 are calculated as follows, and the 帛-positive value measuring device (10) in each of the processing tanks 1A to 1〇c is calculated. When the difference between the PH value and the reference value is measured, the PH value is higher than the reference value ^ ", and ^ (when the substrate s is not sufficiently performed), the conveying speed of the transporting roller 12 to transport the substrate s is reduced to a fixed speed, Thus, the cleaning time of the substrate s is extended with respect to the standard time, and the supply W for supplying the eluent to the substrate is increased. On the contrary, when the pH value is lower than the reference value fixed level of 129948.doc -22-200903599 (when the substrate S is excessively cleaned), the conveying speed of the conveying roller 12 to transport the substrate S is increased only by a fixed speed. This shortens the cleaning time of the substrate § and reduces the supply of the eluent to the substrate 8. Further, in the cleaning process of the substrate S, when the measured pH value of the first pH value measuring device 16 exceeds the reference value (the specific pH value for liquid management) in the first processing tank 10A, The eluent discharged from the treatment tank 1A is discarded through the above-described outlet pipe 24A (branch pipe 24A). Similarly, when the pH value exceeds the reference value in the second treatment tank 10B, the eluent discharged from the second treatment tank 1B is delivered to the storage tank 20A via the outlet pipe 24B (branch pipe 24B'). . X, new liquid is introduced into each of the storage tanks 20A, 20B via the new liquid supply pipe 39. Thereby, the function of circulating the eluent in each of the treatment tanks 1 〇A 10B can be restored. That is, in this embodiment, the controller 4G corresponds to the supply amount control means and the replacement control means of the present invention. According to the apparatus of the third embodiment as described above, when the substrate S is excessively cleaned, the conveying speed of the substrate 3 is increased only by a fixed speed, thereby suppressing the supply amount of the eluent to the substrate S, and conversely, when When the substrate δ is not sufficiently cleaned, the transport speed of the substrate S is lowered by a fixed speed, thereby increasing the supply amount of the eluent to the substrate s. Therefore, similarly to the first embodiment, the substrate s can be The washing liquid is supplied to the substrate s in response to the processing conditions, and the cleaning process is performed. Therefore, the waste of the eluent can be suppressed, and the substrate s can be processed economically. Further, in the above-described manner, the transport speed of the substrate S is increased in accordance with the progress of the cleaning process of the substrate s, so that the cleaning process is performed while the substrate s is always transported at a fixed speed of 129948.doc -23-200903599. Compared, there are advantages that can increase production. In addition, the substrate processing apparatus of the first to third embodiments described above is an example of a preferred embodiment of the substrate processing apparatus of the present invention, and the specific configuration thereof can be appropriately changed without departing from the scope of the invention. For example, in the embodiment, the eluent from the substrate s is received by the liquid-contacting unit 7 and the eluent is introduced into the pH meter main body 8 to constitute the first pH measuring device 16 However, it is of course possible to omit the liquid-contacting portion 17, and directly receive the eluent from the substrate s by the pH meter main body 18, and measure the pH. In short, the pH of the eluent can be measured before the eluent flowing down from the substrate s reaches the bottom of the treatment tanks 10A to 10C. However, the use of the first pH measuring device 16 as in the above embodiment enables the eluent to reliably react with the pH meter body even when the eluent flows sparsely along the substrate s. 18 contact, thus enabling a more reliable determination of the pH. Further, in the embodiment, the processing state of the substrate s is grasped based on the degree of deterioration of the eluent, and as described above, the degree of deterioration of the eluent is detected by measuring the pH of the eluent, but of course, The physical quantity associated with the degree of deterioration of the eluent can also be detected. A physical quantity other than 11 values. For example, the specific resistance or conductivity of the eluent can also be determined. Further, in the first embodiment, based on the measurement result of the pH value of the first processing tank 1A2, the supply amount of the eluent to the substrate §A is controlled in the first processing tank A, but for example, Controlling the supply amount of the eluent in the first treatment tank 1A, or controlling the supply amount of the eluent in the first treatment tank A to 129948.doc -24·200903599, and based on the first As a result of measuring the pH of the treatment tank 10A, the supply amount of the eluent to the substrate S in the treatment tanks 10B and 10C on the downstream side is controlled. Specifically, when it is determined that the substrate s has been cleaned in the first processing tank 1 (the measured value of the pH is lower than the reference value by a fixed level or more), it is possible to treat the processing tank 10B, 1〇. The supply amount of the eluent supplied to the substrate s in c is decremented, or any one of the processing tanks 10B and 10C is omitted (that is, only the eluent is not supplied and only the substrate s is passed). In short, it is also possible to control the supply amount of the eluent in the downstream side treatment tank and the like based on the measurement result of the 1) 11 value of the eluent in the upstream side treatment tank. This aspect is also the same for the second and third embodiments. Further, in the embodiment, the present invention is applied to an example of a substrate processing apparatus of the type that supplies the eluent to the upper surface thereof while transporting the substrate s. However, of course, the eluent is supplied to the substrate 8 in a stationary state. In order to perform the cleaning process, the substrate s is transported to the downstream side after the end of the cleaning, and the present invention can also be applied to the substrate processing apparatus of this type. In this case, the 1) 11 value of the eluent flowing down from the substrate S can be measured by the pH measuring device, and when the measured value is lowered to a fixed level at which the cleaning of the substrate S is considered to have ended, the eluent is stopped. The substrate S is supplied and carried out. As a result, the amount of eluent consumed and the stop time of the substrate S can be suppressed to the minimum required, so that the cleaning process of the substrate s can be performed economically and efficiently. In particular, when the third processing tank 10C is processed as described above, the problem that the substrate s having insufficient cleaning processing is carried out to the downstream side can be prevented in advance, and as a result, the cleaning processing can be further improved. The advantage of sex. 129948.doc -25- 200903599 Further, in order to increase or decrease the supply amount of the liquid to the substrate s according to the progress of the cleaning process, in the first and second embodiments, the mother time of the eluent is controlled. In the third embodiment, the conveyance speed of the substrate s (the processing time of the substrate s) is controlled. However, it is of course possible to control the discharge amount of the eluent from the cutting nozzle 14 and the substrate 8 Both of the transport speeds increase or decrease the supply amount of the eluent to the substrate s. Further, in the embodiment, the substrate processing apparatus which performs the cleaning process on the substrate S after the etching process is described as an application example of the present invention, but the present invention can also be applied to a substrate after the resist film peeling treatment, for example. S is the device for cleaning. Further, in addition to the apparatus for performing the cleaning treatment while flowing the eluent along the substrate S as described above, the present invention can also be applied to a device for performing chemical treatment while flowing the chemical liquid along the substrate s, in addition to The present invention can also be applied to the processing of supplying the processing liquid to the substrate 8 in the horizontal posture or the vertical posture, in addition to the device that performs the processing while supplying the processing liquid (cleaning liquid) to the substrate 8 in the inclined posture. Device. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing a substrate processing apparatus (first embodiment) of the present invention. Fig. 2 is a side elevational view showing the position of the substrate in each of the processing tanks and the position of the first pH value determining means and the processing unit of the first pH measuring means. Fig. 3 is a schematic view showing a substrate processing apparatus (second embodiment) of the present invention. 129948.doc -26- 200903599 Fig. 4 is a schematic view showing a substrate processing apparatus (third embodiment) of the present invention. [Description of main component symbols] 10A First processing tank 10B Second processing tank 10C Third processing tank 12 Conveying roller 14 Shower nozzle 16 ' 36 pH measuring device 17 Water receiving portion 18 pH meter main body 20A First storage tank 20B Second storage tank 20C Third storage tank 22 Supply piping 40 Controller 129948.doc -27-

Claims (1)

200903599 十、申請專利範圍: 1· 一種基板處理裝置,其传句合拉 共糸匕3耩由贺嘴構件朝基板之表 面供給處理液而對基板實施特定之處理之處理槽者盆 特徵在於: 〃 包含測定機構,該測定機構在自上述基板之表面流下 :處理液到達上述處理槽的底部之前接受該處理液,測 定與該處理液之劣化狀態相關聯之特定之物理量。 2_如請求項1之基板處理裝置,其中 L 3在處理中將上述基板以傾斜姿勢支持之支持機 構,上述敎機構配置於受到上述支持機構支持之基板 之低位側之端緣的下方。 3. 如請求項1或2之基板處理裝置,其中 上述測定機構包含:測定部,其與處理液相接觸而測 定上述物理量;以及引導部,其接受自基板流下之處理 液並將該處理液引導至上述測定部。 4. 如請求項1或2之基板處理裝置,其中 . 該基板處理裝置包含供給量控制機構,該供給量控制 機構基於上述物理量之測定結果而對朝基板供給之處理 液之供給量進行控制。 5. 如請求項4之基板處理裝置,其中 上述供給量控制機構基於上述測定結果來控制每單位 時間之處理液之供給量。 6. 如請求項4之基板處理裝置,其中 上述供給量控制機構基於上述測定結果來控制對基板 129948.doc 200903599 供給處理液的供給時間。 7·如請求項6之基板處理裝置,其中 一面輸送基板一面對該基板供給處理液,上述供給量 控制機構基於上述測定結果來控制基板之輸送速度。 8. 如請求項4之基板處理裝置,其中 當將上述測定機構設為第一測定機構時,進而包含與 該第-敎機構不同之第二敎機構,該第二測定機構 測定與供給至基板之前之處理液相關之上述物理量,上 述供給量控制機構基於該等第―、第二敎機構之測定 結果之差來控制上述供給量。 9. 如請求項丨或2之基板處理裝置其中 包含: 處理液之循環系統,其將在上述處理槽之處理中經使 用且在使用|被回收之處理液再次用於上述處理槽中之 處理;200903599 X. Patent application scope: 1. A substrate processing apparatus, which is characterized in that the processing tank is supplied with a processing liquid supplied from the mouthpiece member toward the surface of the substrate and the substrate is subjected to a specific treatment. 〃 Included in the measurement mechanism, the measurement means flows from the surface of the substrate: the treatment liquid receives the treatment liquid before reaching the bottom of the treatment tank, and measures a specific physical quantity associated with the deterioration state of the treatment liquid. The substrate processing apparatus according to claim 1, wherein L 3 is a supporting mechanism for supporting the substrate in an inclined posture during processing, and the crucible mechanism is disposed below an edge of a lower side of the substrate supported by the support mechanism. 3. The substrate processing apparatus according to claim 1 or 2, wherein the measuring means includes: a measuring unit that measures the physical quantity in contact with the processing liquid phase; and a guiding unit that receives the processing liquid flowing down from the substrate and the processing liquid Guided to the above measuring unit. 4. The substrate processing apparatus according to claim 1 or 2, wherein the substrate processing apparatus includes a supply amount control unit that controls a supply amount of the processing liquid supplied to the substrate based on a measurement result of the physical quantity. 5. The substrate processing apparatus according to claim 4, wherein the supply amount control means controls the supply amount of the processing liquid per unit time based on the measurement result. 6. The substrate processing apparatus according to claim 4, wherein the supply amount control means controls the supply time of the supply of the processing liquid to the substrate 129948.doc 200903599 based on the measurement result. The substrate processing apparatus according to claim 6, wherein the processing liquid is supplied to the substrate while the substrate is being transported, and the supply amount control means controls the transport speed of the substrate based on the measurement result. 8. The substrate processing apparatus according to claim 4, wherein when the measuring means is a first measuring means, further comprising a second meandering mechanism different from the first weir mechanism, the second measuring means measuring and supplying to the substrate The supply amount control means controls the supply amount based on the difference between the measurement results of the first and second enthalpy mechanisms. 9. The substrate processing apparatus according to claim 2 or 2, comprising: a circulation system for treating liquid, which is used in the treatment of the above treatment tank and used again in the treatment tank using the recovered treatment liquid ; 排液機構其將在該循環系統内循環之處理液中在使 用後被回收之處理液自該循環系統排出; 新液導入機構,其向該循環系統内導入新的處理液; 以及 更換控制機構,其基於上述測定機構之測定結果來控 制上述排液機構及新液導入機構,由此更換上述循環系 統内之處理液。 10. 如請求項4之基板處理裝置, 包含第一處理槽與第二處 其中 理槽作為上述處理槽 該第 129948.doc 200903599 二處理槽使用與上述第一處理槽 該第-處理槽中結束處理之基:二一:類之處理液對在 基板進行處理,並且,包含 處理液之供給系統,其係將在上述第二處理槽之處理令 經使用且在使用後被回收之處理液用於上述第—處理槽 中之處理,在上述第一處理槽上配置有上述測定機構, 上述供給量控制機構基於上述測定結果來控制在第一處 理槽中對基板供給處理液之供給量、及在第二處理槽中 對基板供給處理液之供給量中之至少一方。 129948.doca draining mechanism that discharges a treatment liquid recovered after use in a treatment liquid circulating in the circulation system from the circulation system; a new liquid introduction mechanism that introduces a new treatment liquid into the circulation system; and a replacement control mechanism The liquid discharge mechanism and the new liquid introduction mechanism are controlled based on the measurement results of the measurement unit to replace the treatment liquid in the circulation system. 10. The substrate processing apparatus of claim 4, comprising a first processing tank and a second processing tank as the processing tank, the 129948.doc 200903599 second processing tank is used and the first processing tank is ended in the first processing tank Treatment base: 21: a treatment liquid for treating a substrate, and a supply system including a treatment liquid, which is used for treating the treatment liquid which is used in the second treatment tank and recovered after use. In the processing in the first processing tank, the measuring unit is disposed in the first processing tank, and the supply amount control unit controls the supply amount of the processing liquid to the substrate in the first processing tank based on the measurement result, and At least one of the supply amount of the processing liquid is supplied to the substrate in the second processing tank. 129948.doc
TW97110235A 2007-05-24 2008-03-21 Base plate treating device TW200903599A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007137995 2007-05-24
JP2007301785A JP2009004728A (en) 2007-05-24 2007-11-21 Substrate processing apparatus

Publications (1)

Publication Number Publication Date
TW200903599A true TW200903599A (en) 2009-01-16

Family

ID=40100683

Family Applications (1)

Application Number Title Priority Date Filing Date
TW97110235A TW200903599A (en) 2007-05-24 2008-03-21 Base plate treating device

Country Status (3)

Country Link
JP (1) JP2009004728A (en)
CN (1) CN101312119A (en)
TW (1) TW200903599A (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5459839B2 (en) * 2009-09-18 2014-04-02 株式会社東芝 Substrate manufacturing apparatus and manufacturing method
JP5630808B2 (en) * 2010-03-26 2014-11-26 住友精密工業株式会社 Water-saving cleaning system for transfer type substrate processing equipment
JP2013191779A (en) * 2012-03-14 2013-09-26 Toshiba Corp Processor and processing method
JP2014184434A (en) * 2014-04-21 2014-10-02 Sumitomo Precision Prod Co Ltd Water-saving cleaning system in conveyance type board processing device
CN104001685B (en) * 2014-06-13 2016-03-02 肇庆宏旺金属实业有限公司 A kind of cleaning fluid automatic circulation device for scrubbing unit
CN104624568B (en) * 2014-12-18 2016-07-27 深圳市华星光电技术有限公司 A kind of cleaning equipment
CN104617018B (en) * 2015-01-23 2017-07-11 深圳市华星光电技术有限公司 A kind of substrate board treatment and substrate processing method using same
KR101898095B1 (en) 2017-02-22 2018-09-12 주식회사 싸이노스 Detecting apparatus
CN107159637A (en) * 2017-07-03 2017-09-15 杭州博野精密工具有限公司 A kind of full-automatic saw blade is cleaned and dried the oily all-in-one of brush
CN107552522A (en) * 2017-09-05 2018-01-09 深圳市华星光电技术有限公司 A kind of water washing device and method for washing of wet method stripping machine
CN108971174A (en) * 2018-08-30 2018-12-11 山东淄博汉能薄膜太阳能有限公司 Cleaning device and method

Also Published As

Publication number Publication date
CN101312119A (en) 2008-11-26
JP2009004728A (en) 2009-01-08

Similar Documents

Publication Publication Date Title
TW200903599A (en) Base plate treating device
JP2004273984A (en) Method and device for substrate processing
KR20200062327A (en) Substrate processing method and substrate processing apparatus
TW201133586A (en) Water saving type rinsing system in conveyable substrate type processing apparatus
JP6487168B2 (en) Substrate processing apparatus and substrate processing method
TWI467643B (en) Substrate processing device
JP4997080B2 (en) Substrate processing equipment
TWI722378B (en) Substrate processing apparatus, processing liquid draining method, processing liquid replacing method, and substrate processing method
JP4869965B2 (en) Substrate processing method and substrate processing apparatus
US7083038B2 (en) Automatic developing device, roller washing method, photosensitive material processing device, and preparation method for processing liquid
JP3481416B2 (en) Substrate processing apparatus and method
KR100933126B1 (en) Substrate processing equipment
JP4982453B2 (en) Treatment liquid supply mechanism, liquid treatment apparatus, and treatment liquid supply method
JP7126927B2 (en) SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
TW200529936A (en) Single-wafer coating film apparatus and method
JP3695917B2 (en) Substrate processing equipment
TWI667706B (en) Substrate processing method and substrate processing apparatus
JP6235070B2 (en) Substrate processing apparatus and substrate processing method
TWI590316B (en) Substrate processing apparatus
JPH0945656A (en) Semiconductor manufacturing apparatus
JP3715171B2 (en) Substrate processing apparatus and substrate processing method
KR20090047262A (en) Apparatus for supplying chemicals
JP4647532B2 (en) Substrate processing apparatus and substrate processing method
JP3626360B2 (en) Substrate processing apparatus and method
JP2002334864A (en) Supply system of aqueous solution for exfoliation, and method for maintaining temperature and water content concentration