JP3481416B2 - Substrate processing apparatus and method - Google Patents

Substrate processing apparatus and method

Info

Publication number
JP3481416B2
JP3481416B2 JP8809897A JP8809897A JP3481416B2 JP 3481416 B2 JP3481416 B2 JP 3481416B2 JP 8809897 A JP8809897 A JP 8809897A JP 8809897 A JP8809897 A JP 8809897A JP 3481416 B2 JP3481416 B2 JP 3481416B2
Authority
JP
Japan
Prior art keywords
substrate
processing
water
washing
speed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP8809897A
Other languages
Japanese (ja)
Other versions
JPH10284380A (en
Inventor
泰正 志摩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Screen Holdings Co Ltd
Dainippon Screen Manufacturing Co Ltd
Original Assignee
Screen Holdings Co Ltd
Dainippon Screen Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Screen Holdings Co Ltd, Dainippon Screen Manufacturing Co Ltd filed Critical Screen Holdings Co Ltd
Priority to JP8809897A priority Critical patent/JP3481416B2/en
Publication of JPH10284380A publication Critical patent/JPH10284380A/en
Application granted granted Critical
Publication of JP3481416B2 publication Critical patent/JP3481416B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、液晶表示パネル用
あるいはプラズマ表示パネル用ガラス基板、半導体ウェ
ハ等の基板に現像等の処理を行うための基板処理装置及
び方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus and method for performing processing such as development on a glass substrate for a liquid crystal display panel or a plasma display panel, a substrate such as a semiconductor wafer.

【0002】[0002]

【従来の技術】従来存在する連続枚葉式のウエット処理
装置では、コロやコンベア等を用いて基板を一定速度で
搬送しつつ、基板に現像液やエッチング液などの処理液
を供給して現像やエッチングなどのウエット処理を施し
た後、基板に純水を供給して水洗処理を施し、最後にエ
アナイフで基板に付着した水分を除去して処理を完了し
ている。なお、ウエット処理の開始に際しては、搬送さ
れてくる基板に対してスプレー状或いはカーテン状に処
理液を供給し、ウエット処理の終了に際しては、処理液
が付着した基板に対してリンス液を供給するかエアナイ
フを作用させることで基板から処理液を除去している。
また、水洗処理に際しては、搬送されてくる基板に対し
てスプレー状或いはカーテン状に洗浄水を供給すること
によって、基板表面に残留している処理液を純水に置換
し、処理液を基板表面から完全に除去している。
2. Description of the Related Art In a conventional continuous single-wafer type wet processing apparatus, while a substrate is conveyed at a constant speed by using a roller or a conveyor, a processing solution such as a developing solution or an etching solution is supplied to the substrate for development. After performing a wet treatment such as etching or etching, pure water is supplied to the substrate to perform a water washing treatment, and finally, the moisture attached to the substrate is removed by an air knife to complete the treatment. At the start of the wet processing, the processing liquid is supplied to the conveyed substrate in a spray or curtain shape, and at the end of the wet processing, the rinse liquid is supplied to the substrate to which the processing liquid is attached. The treatment liquid is removed from the substrate by operating an air knife.
Further, in the water washing process, the washing liquid is supplied to the conveyed substrate in a spray or curtain form so that the treatment liquid remaining on the substrate surface is replaced with pure water, and the treatment liquid is transferred to the substrate surface. Completely removed from.

【0003】[0003]

【発明が解決しようとする課題】しかし、従来の装置で
は、最終段のエアナイフによる水分除去の工程で効果的
な水分除去を達成するため、基板の搬送速度を比較的低
速としなければならず、ウエット処理時に基板表面に処
理ムラが生じる原因となっていた。つまり、基板の搬送
速度が比較的低速の場合、処理液の供給及び除去のバラ
ツキに帰因して、処理時間や処理特性が基板の面内にお
いて十分均一にならず、処理ムラを発生させ易くなって
いた。
However, in the conventional apparatus, in order to achieve effective water removal in the final step of removing water with an air knife, the substrate transfer speed must be relatively low. This has been a cause of uneven processing on the substrate surface during wet processing. That is, when the substrate transfer speed is relatively low, the processing time and the processing characteristics are not sufficiently uniform in the plane of the substrate due to the variations in the supply and removal of the processing liquid, and the processing unevenness is likely to occur. Was becoming.

【0004】そこで、この発明は、基板表面内での処理
ムラの発生を低減することができる基板処理装置及び方
法を提供することを目的とする。
Therefore, an object of the present invention is to provide a substrate processing apparatus and method capable of reducing the occurrence of processing unevenness on the substrate surface.

【0005】[0005]

【課題を解決するための手段】上記課題を解決するた
め、請求項1の基板処理装置は、基板を搬送しつつ当該
基板に所定の処理を施す基板処理装置において、前記基
板の処理を開始する際及び基板の処理を終了する際に、
処理中よりも高速で基板を搬送する処理部と、処理部よ
りも基板の搬送に関し後段側に配置され、処理後の基板
の水洗を開始する際及び基板の水洗を終了する際に、水
洗中よりも高速で基板を搬送する水洗部とを備えること
を特徴とする。
In order to solve the above problems, a substrate processing apparatus according to a first aspect of the present invention starts the processing of the substrate in the substrate processing apparatus for carrying out a predetermined processing on the substrate while transporting the substrate. At the time of finishing the processing of the substrate,
A processing unit that transfers a substrate at a higher speed than during processing, and a processing unit that is located downstream of the processing unit with respect to the transfer of the substrate, and is being washed when starting washing the substrate after treatment and when finishing washing the substrate. And a water washing section that conveys the substrate at a higher speed than the above.

【0006】また、請求項2の基板処理装置は、処理部
が、薬剤を含む液体を基板の表面に供給して基板を処理
することを特徴とする。
Further, the substrate processing apparatus according to claim 2 is characterized in that the processing section supplies a liquid containing a chemical to the surface of the substrate to process the substrate.

【0007】また、請求項3の基板処理装置は、水洗部
よりも基板の搬送に関し後段側に配置され、水洗後の基
板を少なくとも一枚収容可能な基板搬送室と、当該基板
搬送室よりも基板の搬送に関し後段側に配置され、水洗
後の基板から洗浄水を除去するエアナイフ部とをさらに
備えることを特徴とする。
Further, the substrate processing apparatus according to the third aspect of the present invention is arranged at a rear stage side of the substrate transfer with respect to the water washing section, and is capable of accommodating at least one substrate after the water washing, and a substrate transfer chamber more than the substrate transfer chamber. It further comprises an air knife part arranged on the rear side with respect to the transportation of the substrate and for removing the cleaning water from the substrate after the water washing.

【0008】また、請求項4の基板処理方法は、基板を
搬送しつつ当該基板に所定の処理を施す基板処理方法に
おいて、基板の処理を開始する際及び基板の処理を終了
する際に、処理中よりも高速で基板を搬送し、処理後の
基板の水洗を開始する際及び基板の水洗を終了する際
に、水洗中よりも高速で基板を搬送することを特徴とす
る。
A substrate processing method according to a fourth aspect of the present invention is a substrate processing method for performing a predetermined processing on a substrate while transporting the substrate, the processing being performed when starting the processing of the substrate and when finishing the processing of the substrate. It is characterized in that the substrate is transported at a higher speed than medium, and the substrate is transported at a higher speed than during the rinsing when starting the rinsing of the treated substrate and terminating the rinsing of the substrate.

【0009】[0009]

【発明の実施の形態】図1は、本発明の一実施形態であ
る基板洗浄装置の構造を説明するためのブロック図であ
る。この基板洗浄装置は、基板に現像処理を施す現像部
10と、現像後の基板表面に残留している現像液を純水
で置換して洗浄する水洗部30と、純水による洗浄後の
基板の表面から純水を除去して乾燥させる乾燥部50と
を備える。なお、現像部10、水洗部30、及び乾燥部
50の動作は、制御部70によって制御されている。
DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a block diagram for explaining the structure of a substrate cleaning apparatus which is an embodiment of the present invention. This substrate cleaning apparatus includes a developing unit 10 for developing a substrate, a water washing unit 30 for substituting pure water for the developing solution remaining on the substrate surface after development, and a substrate after cleaning with pure water. And a drying unit 50 that removes pure water from the surface and dries it. The operations of the developing unit 10, the water washing unit 30, and the drying unit 50 are controlled by the control unit 70.

【0010】図2は、図1に示す装置の現像部10の正
面構造を説明する図である。この現像部10は、洗浄前
の基板が投入される投入部11と、投入部11から搬送
されてきた基板WFの表面に対し前処理として現像液を
供給するプリウエット部13と、前処理後の基板WFの
表面に対し現像液を噴射してシャワー現像を行うシャワ
ー現像部15と、浸漬後の基板WFの表面から現像液を
簡易に除去する液切り部17とを備える。
FIG. 2 is a view for explaining the front structure of the developing section 10 of the apparatus shown in FIG. The developing unit 10 includes a loading unit 11 into which a pre-cleaned substrate is loaded, a pre-wetting unit 13 that supplies a developing solution to the surface of the substrate WF transported from the loading unit 11 as a pre-treatment, and a pre-treatment unit. The shower developing unit 15 that sprays the developing solution onto the surface of the substrate WF to perform the shower development, and the draining unit 17 that easily removes the developing solution from the surface of the substrate WF after the immersion.

【0011】投入部11は、搬送経路PAの直下に適当
な間隔で配置された複数の搬送ローラRを備えており、
これらの搬送ローラRは、モータM1によって同期して
回転駆動され、投入部11にある基板を所定の速度で搬
送する。なお、投入部11の入口側には、基板の有無を
検出するため、搬送経路PAに対し進退可能に配設され
た振り子型素子の変位を電磁的に出力する第1振り子セ
ンサS1が配置されている。
The feeding section 11 is provided with a plurality of conveying rollers R arranged immediately below the conveying path PA at appropriate intervals.
These transport rollers R are rotationally driven in synchronization with the motor M1 to transport the substrate in the loading section 11 at a predetermined speed. A first pendulum sensor S1 for electromagnetically outputting the displacement of a pendulum type element, which is arranged so as to be able to move forward and backward with respect to the transport path PA, is arranged at the entrance side of the input section 11 in order to detect the presence or absence of a substrate. ing.

【0012】プリウエット部13も、搬送経路PAの直
下に適当な間隔で配置された複数の搬送ローラRを備え
ており、これらの搬送ローラRは、モータM2によって
同期して回転駆動され、プリウエット部13にある基板
を所定の速度で搬送する。プリウエット部13の入口側
には、基板の上側表面側に位置して後述するノズル42
から吐出される現像液を基板表面に分散させるローラ1
31と、このローラ131に現像液を吐出してローラ1
31を現像液で浸潤させるノズル133とが設けられて
いる。このノズル133には、下部タンク19に貯留さ
れている現像液がポンプP1を介して適宜供給される。
なお、プリウエット部13の出口側には、基板の有無を
検出するため、第1振り子センサS1と同一構造の第2
振り子センサS2が配置されている。
The pre-wetting section 13 also has a plurality of conveying rollers R arranged immediately below the conveying path PA at appropriate intervals. These conveying rollers R are rotationally driven by a motor M2 in synchronization with each other. The substrate in the wet section 13 is conveyed at a predetermined speed. A nozzle 42, which will be described later, is located on the upper surface side of the substrate on the inlet side of the pre-wet portion 13.
Roller 1 for dispersing the developer discharged from the substrate onto the substrate surface
31 and the roller 1 by discharging the developing solution onto the roller 131.
And a nozzle 133 for infiltrating 31 with a developing solution. The developing solution stored in the lower tank 19 is appropriately supplied to the nozzle 133 via the pump P1.
On the outlet side of the pre-wet portion 13, a second structure having the same structure as the first pendulum sensor S1 is provided to detect the presence or absence of the substrate.
A pendulum sensor S2 is arranged.

【0013】シャワー現像部15も、搬送経路PAの直
下に複数の搬送ローラRを備えており、これらの搬送ロ
ーラRは、モータM3、M4によって同期して回転駆動さ
れ、シャワー現像部15にある基板を所定の速度で搬送
する。搬送経路PAの上方には、下部タンク19からの
現像液をポンプP2を介して搬送中の基板表面に噴射す
るシャワーノズル151が設けられている。
The shower developing section 15 also includes a plurality of conveying rollers R immediately below the conveying path PA. These conveying rollers R are rotationally driven in synchronization by motors M3 and M4, and are located in the shower developing section 15. The substrate is transported at a predetermined speed. A shower nozzle 151 for injecting the developer from the lower tank 19 onto the surface of the substrate being conveyed via the pump P2 is provided above the conveyance path PA.

【0014】液切り部17も、搬送経路PAの直下に複
数の搬送ローラRを備えており、これらの搬送ローラR
は、モータM5によって同期して回転駆動され、液切り
部17にある基板を所定の速度で搬送する。なお、液切
り部17の入口側には、基板の有無を検出するため、第
3振り子センサS3が配置されている。液切り部17の
出口側には、搬送経路PAの上下に一対の液切りローラ
171が配置されている。基板がこれらの液切りローラ
171を通過すると、基板の上下表面からは、現像液が
概ね除去される。
The liquid draining section 17 also includes a plurality of transport rollers R immediately below the transport path PA.
Is synchronously rotated by a motor M5 and conveys the substrate in the liquid draining section 17 at a predetermined speed. A third pendulum sensor S3 is arranged on the inlet side of the liquid draining section 17 to detect the presence or absence of the substrate. On the outlet side of the liquid draining section 17, a pair of liquid draining rollers 171 are arranged above and below the transport path PA. When the substrate passes through the liquid draining rollers 171, the developer is substantially removed from the upper and lower surfaces of the substrate.

【0015】図3は、図1に示す装置の洗浄部30及び
乾燥部50の正面構造を説明する図である。なお、洗浄
部30は、現像後の基板WFを効率的に水洗するため、
第1段階の循環水洗を行う第1水洗部31と、第2段階
の循環水洗を行う第2水洗部35と、最終仕上げの直液
水洗を行う第3水洗部37とに分けられている。
FIG. 3 is a view for explaining the front structure of the cleaning section 30 and the drying section 50 of the apparatus shown in FIG. Since the cleaning unit 30 efficiently rinses the developed substrate WF with water,
It is divided into a first water washing section 31 that performs the first stage circulating water washing, a second water washing section 35 that performs the second stage circulating water washing, and a third water washing section 37 that performs the final direct water washing.

【0016】第1水洗部31は、搬送経路PAの直下に
複数の搬送ローラRを備えており、これらの搬送ローラ
Rは、モータM6によって同期して回転駆動され、第1
水洗部31にある基板を所定の速度で搬送する。搬送経
路PAの上下には、洗浄水噴射ノズル311が設けられ
ている。この洗浄水噴射ノズル311には、ポンプP3
が接続されており、このポンプP3を介して循環水タン
ク38中の洗浄水が供給される。この循環水タンク38
に貯留されている洗浄水は、第2水洗部35で洗浄に利
用された洗浄水を回収して再利用するものである。な
お、第1水洗部31の入口側には、基板の有無を検出す
るため、第4振り子センサS4が配置されている。
The first water washing section 31 is provided with a plurality of conveying rollers R immediately below the conveying path PA, and these conveying rollers R are rotationally driven in synchronization by a motor M6.
The substrate in the water washing section 31 is conveyed at a predetermined speed. Cleaning water jet nozzles 311 are provided above and below the transport path PA. The cleaning water injection nozzle 311 has a pump P3.
Is connected, and the cleaning water in the circulating water tank 38 is supplied via this pump P3. This circulating water tank 38
The cleaning water stored in is to collect and reuse the cleaning water used for cleaning in the second water cleaning section 35. A fourth pendulum sensor S4 is arranged on the inlet side of the first water washing section 31 to detect the presence or absence of the substrate.

【0017】第2水洗部35は、搬送経路PAの直下に
複数の搬送ローラRを備えており、これらの搬送ローラ
Rは、モータM7によって同期して回転駆動され、第2
水洗部35にある基板を所定の速度で搬送する。搬送経
路PAの上下には、洗浄水噴射ノズル351が設けられ
ている。この洗浄水噴射ノズル351には、ポンプP4
が接続されており、このポンプP4を介して循環水タン
ク39中の洗浄水が供給される。循環水タンク39に貯
留されている洗浄水は、第3水洗部37で洗浄に利用さ
れた純水を回収したものである。
The second water washing section 35 is provided with a plurality of conveying rollers R immediately below the conveying path PA. These conveying rollers R are rotationally driven in synchronization by a motor M7,
The substrate in the water washing section 35 is transported at a predetermined speed. Cleaning water jet nozzles 351 are provided above and below the transport path PA. The cleaning water jet nozzle 351 has a pump P4.
Is connected, and the wash water in the circulating water tank 39 is supplied via this pump P4. The cleaning water stored in the circulating water tank 39 is pure water used for cleaning in the third water cleaning section 37.

【0018】第3水洗部37は、搬送経路PAの直下に
複数の搬送ローラRを備えており、これらの搬送ローラ
Rは、モータM8によって同期して回転駆動され、第3
水洗部37にある基板を所定の速度で搬送する。搬送経
路PAの上下には、基板に対し仕上げの洗浄を行うた
め、純水源からの直純水を基板の表面に直接噴射する直
液ノズル371が設けられている。この直液ノズル37
1は、流量計372とエアー弁373とを介して純水源
に接続されている。なお、第3水洗部37の出口側に
は、基板の有無を検出するため、第5振り子センサS5
が配置されている。
The third washing section 37 is provided with a plurality of conveying rollers R immediately below the conveying path PA, and these conveying rollers R are rotationally driven by a motor M8 in synchronization with each other.
The substrate in the water washing section 37 is transported at a predetermined speed. Direct liquid nozzles 371 for directly injecting direct pure water from a pure water source onto the surface of the substrate are provided above and below the transfer path PA for finishing cleaning of the substrate. This direct liquid nozzle 37
1 is connected to a pure water source via a flow meter 372 and an air valve 373. The fifth pendulum sensor S5 is provided on the outlet side of the third washing section 37 to detect the presence or absence of the substrate.
Are arranged.

【0019】乾燥部50は、前段側が基板搬送室51と
なっており、後段側がエアナイフ室53となっている。
The drying section 50 has a substrate transfer chamber 51 on the front side and an air knife chamber 53 on the rear side.

【0020】前段側の基板搬送室51は、搬送経路PA
の直下に複数の搬送ローラRを備えており、これらの搬
送ローラRは、モータM9によって同期して回転駆動さ
れ、基板搬送室51にある基板を所定の速度で搬送す
る。この基板搬送室51は、第3水洗部37から送り出
された、水洗完了直後の基板であって、エアナイフ室5
3に送り込まれる、乾燥直前の基板を、一枚以上蓄える
ことができる空間を有する。
The substrate transfer chamber 51 on the upstream side has a transfer path PA.
A plurality of transfer rollers R are provided immediately below the drive roller R, and these transfer rollers R are rotationally driven in synchronization by a motor M9 to transfer the substrate in the substrate transfer chamber 51 at a predetermined speed. The substrate transfer chamber 51 is the substrate sent out from the third water washing section 37 immediately after the completion of the water washing, and is the air knife chamber 5
It has a space for storing one or more substrates immediately before being dried, which are sent to the substrate 3.

【0021】後段側のエアナイフ室53は、搬送経路P
Aの直下に複数の搬送ローラRを備えており、これらの
搬送ローラRは、モータM10によって同期して回転駆動
され、エアナイフ室53にある基板を所定の速度で搬送
する。搬送経路PAの上下には、高圧の窒素ガスを基板
の上下表面に噴射して基板の上下表面の純水を吹き飛ば
して基板表面の水切りを行うためのエアナイフ531が
適宜配置されている。
The air knife chamber 53 on the rear stage side has a transport path P.
A plurality of transport rollers R are provided immediately below A, and these transport rollers R are rotationally driven in synchronization by a motor M10 to transport the substrate in the air knife chamber 53 at a predetermined speed. Air knives 531 for spraying high-pressure nitrogen gas onto the upper and lower surfaces of the substrate to blow off the pure water on the upper and lower surfaces of the substrate to drain the substrate surface are appropriately disposed above and below the transfer path PA.

【0022】図4は、図2及び図3に示す装置の内部に
おける基板の移動速度を説明する図であり、横軸は装置
内の位置を示し、縦軸は時間を示す。なお、実線L1
は、最初に投入される基板の先端の移動を示し、実線L
2は、次に投入される基板の先端の移動を示す。
FIG. 4 is a diagram for explaining the moving speed of the substrate inside the apparatus shown in FIGS. 2 and 3, where the horizontal axis indicates the position within the apparatus and the vertical axis indicates time. The solid line L1
Indicates the movement of the leading edge of the substrate that is initially loaded, and the solid line L
2 shows the movement of the tip of the next substrate.

【0023】現像部10に設けた投入部11に先端が入
った基板は、モータM1の速度に対応して当初搬送速度
V1で移動する。
The substrate, the tip of which is inserted in the loading section 11 provided in the developing section 10, moves at the initial transport speed V1 corresponding to the speed of the motor M1.

【0024】次に、第1振り子センサS1の検出出力が
OFFに切り替わって基板全体が投入部11中に取り込
まれたと判断した段階で、モータM1を加速し、M2も同
時に高速回転させる。これにより、基板は、比較的高速
の搬送速度V2で移動し、プリウエット部13に送り込
まれつつ先端側から漸次プリウェット現像が施されるこ
とになる。
Next, when it is determined that the detection output of the first pendulum sensor S1 is switched to OFF and the entire substrate is taken into the loading section 11, the motor M1 is accelerated and M2 is simultaneously rotated at high speed. As a result, the substrate moves at a relatively high transport speed V2 and is fed into the pre-wet portion 13 and gradually subjected to pre-wet development from the leading end side.

【0025】次に、第2振り子センサS2の検出出力が
ONに切り替わって基板の先端部がプリウエット部13
を出てシャワー現像部15に入ったと判断した段階で、
モータM2〜M5を低速回転させる。これにより、基板は
上記の搬送速度V2に比較して低速の搬送速度V3で移動
し、これにシャワー現像が施されることになる。なお、
搬送速度V3は、当初の搬送速度V1と等しくなってい
る。
Next, the detection output of the second pendulum sensor S2 is switched to ON, and the front end of the substrate is moved to the pre-wet portion 13.
At the stage when it is determined that
The motors M2 to M5 are rotated at low speed. As a result, the substrate moves at the transport speed V3, which is slower than the above-described transport speed V2, and the shower development is performed on the substrate. In addition,
The transport speed V3 is equal to the original transport speed V1.

【0026】次に、第3振り子センサS3の検出出力が
OFFに切り替わって基板の後端部がシャワー現像部1
5を出たと判断した段階で、モータM5、M6を同時に高
速回転させる。これにより、基板は比較的高速の搬送速
度V4で移動し、この基板に対し現像液の液切りと純水
置換が行われることになる。なお、搬送速度V4は、こ
の場合、プリウエット現像時の搬送速度V2と等しくな
っている。
Next, the detection output of the third pendulum sensor S3 is switched to OFF so that the rear end of the substrate is the shower developing unit 1.
At the stage when it is judged that the value of 5 has been exceeded, the motors M5 and M6 are simultaneously rotated at high speed. As a result, the substrate moves at a comparatively high transport speed V4, and the developer is drained and pure water is replaced with respect to this substrate. In this case, the carrying speed V4 is equal to the carrying speed V2 during the pre-wet development.

【0027】次に、第4振り子センサS4の検出出力が
OFFに切り替わって基板全体が第1水洗部31に取り
込まれたと判断した段階で、モータM6を減速して低速
回転させる。これにより、基板は比較的低速の搬送速度
V5で移動し、水洗が確実に行われることになる。この
際、モータM7、M8も、モータM6の低速回転時に対応
した回転速度となっている。なお、搬送速度V5は、当
初の搬送速度V1(すなわち、シャワー現像時の搬送速
度V3)と等しくなっている。
Next, when it is determined that the detection output of the fourth pendulum sensor S4 has been switched to OFF and the entire substrate has been taken into the first water washing section 31, the motor M6 is decelerated and rotated at a low speed. As a result, the substrate moves at a relatively low transfer speed V5, and the water is reliably washed. At this time, the motors M7 and M8 also have rotational speeds corresponding to the low speed rotation of the motor M6. The transport speed V5 is equal to the initial transport speed V1 (that is, the transport speed V3 during shower development).

【0028】次に、第5振り子センサS5の検出出力が
ONに切り替わって基板の先端部が基板搬送室51に入
ったと判断した段階で、モータM8、M9を同時に高速回
転させる。これにより、基板は比較的高速の搬送速度V
6で移動し、この基板に対する水洗を終了することにな
る。なお、搬送速度V6は、この場合、液切り時の搬送
速度V4(すなわち、プリウエット現像時の搬送速度V
2)と等しくなっている。
Next, when it is determined that the detection output of the fifth pendulum sensor S5 is switched to ON and the front end of the substrate has entered the substrate transfer chamber 51, the motors M8 and M9 are simultaneously rotated at high speed. As a result, the substrate has a relatively high transfer speed V.
It moves at 6 and the washing with water for this substrate is completed. In this case, the carrying speed V6 is the carrying speed V4 when the liquid is drained (that is, the carrying speed V during the pre-wet development).
It is equal to 2).

【0029】次に、第5振り子センサS5の検出出力が
OFFに切り替わって基板全体が基板搬送室51に取り
込まれたと判断した段階で、モータM9を減速する。こ
れにより、基板は比較的低速の搬送速度V7で移動し、
エアーナイフ531によって基板表面の水切りが行われ
ることになる。この際、モータM10は、モータM2の低
速回転時に対応した回転速度となっている。なお、搬送
速度V7は、当初の搬送速度V1と等しくなっている。
Next, when it is determined that the detection output of the fifth pendulum sensor S5 is switched to OFF and the entire substrate is taken into the substrate transfer chamber 51, the motor M9 is decelerated. As a result, the substrate moves at a relatively low transfer speed V7,
The air knife 531 drains the surface of the substrate. At this time, the motor M10 has a rotation speed corresponding to the low speed rotation of the motor M2. The transport speed V7 is equal to the original transport speed V1.

【0030】以上のような動作により、先端がプリウエ
ット部13に達してモータM1、M2によって高速で移動
する状態の基板に対し、現像液を供給することができる
とともに、後端がシャワー現像部15を脱してモータM
5、M6によって高速で移動する状態の基板に対し、現像
液の液切りと純水置換を行うことができる。したがっ
て、現像液の供給と現像液の液切り、純水置換とが迅速
なものとなり、基板先端部に現像液が供給されてから基
板後端部に現像液が供給されるまでの時間差、基板先端
部に液切りと純水置換がなされてから基板後端部に液切
りと純水置換がなされるまでの時間差がともに短くでき
て、現像処理の開始と終了のタイミングを基板の各部で
ほぼ一致させることができ、基板の表面に発生する現像
ムラを低減できる。さらに、搬送速度V2とV4とをほ
ぼ一致させることにより、基板先端部に現像液が供給さ
れてから液切りと純水置換がなされるまでの時間と基板
後端部に現像液が供給されてから液切りと純水置換がな
されるまでの時間とをほぼ一致させることができ、基板
先端部に現像液が作用する時間と基板後端部に現像液が
作用する時間とをほぼ一致させることができ、より効果
的に現像ムラを低減できる。しかも、基板がシャワー現
像部15にかかっている際、基板の搬送速度V3は、制
御部70からの制御信号に基づいて、V1〜V2の広範囲
に亘って適宜変更させることができるので、現像処理の
時間も比較的広範囲に亘って変更できる。また、後端が
液切り部17に達してモータM5、M6によって高速で移
動する状態の基板に対し、液切り部17での液切りと、
第1水洗部31での洗浄水の供給を行うことができると
ともに、先端が第3水洗部37を脱してモータM8、M9
によって高速で移動する状態の基板に対し、洗浄水の供
給を停止することができる。よって、洗浄水の供給とそ
の停止とが迅速なものとなり、基板先端部に洗浄水が供
給されてから基板後端部に洗浄水が供給されるまでの時
間差、基板先端部に洗浄水の供給停止がなされてから基
板後端部に洗浄水の供給停止がなされるまでの時間差が
ともに短くできて、洗浄処理の開始と終了のタイミング
を基板の各部でほぼ一致させることができ、基板の表面
に発生する洗浄ムラを低減できる。さらに、搬送速度V
4とV6とをほぼ一致させることにより、基板先端部に
洗浄水が供給されてから停止されるまでの時間と基板後
端部に洗浄水が供給されてから停止されるまでの時間と
をほぼ一致させることができ、基板先端部に洗浄水が作
用する時間と基板後端部に洗浄水が作用する時間とをほ
ぼ一致させることができ、より効果的に現像ムラを低減
できる。また、エアナイフ室53ではエアナイフ531
による乾燥処理がなされるが、このときの基板の移動速
度はV7であり、十分に遅くでき、確実に乾燥処理がな
される。
By the above operation, the developing solution can be supplied to the substrate whose front end reaches the pre-wet portion 13 and is moved at high speed by the motors M1 and M2, and the rear end is the shower developing portion. Take off 15 and motor M
5. The developer can be drained and pure water can be replaced with respect to the substrate that is moving at high speed by M6. Therefore, the supply of the developing solution, the draining of the developing solution, and the deionized water replacement become quick, and the time difference between the developing solution being supplied to the substrate front end and the developing solution being supplied to the substrate rear end, The time difference between the drainage and deionized water replacement at the leading edge and the drainage and deionized water replacement at the substrate trailing edge can both be shortened, and the start and end timings of the development process can be made almost uniform at each part of the substrate. They can be matched with each other, and development unevenness that occurs on the surface of the substrate can be reduced. Further, by making the transport speeds V2 and V4 substantially equal to each other, the time from when the developing solution is supplied to the front end of the substrate until the draining and the pure water replacement is performed and the developing solution is supplied to the rear end of the substrate. The time from the drainage to the deionized water replacement can be made to substantially match, and the time when the developer acts on the front end of the substrate and the time when the developer acts on the rear end of the substrate are almost equal. The development unevenness can be reduced more effectively. Moreover, when the substrate is resting on the shower developing unit 15, the transporting speed V3 of the substrate can be appropriately changed over a wide range from V1 to V2 based on the control signal from the control unit 70. The time can be changed over a relatively wide range. Also, for the substrate whose rear end has reached the liquid draining portion 17 and is being moved at high speed by the motors M5 and M6,
The washing water in the first washing section 31 can be supplied, and the tip ends of the third washing section 37 to remove the motors M8 and M9.
Thus, the supply of cleaning water can be stopped for the substrate that is moving at a high speed. Therefore, the supply of the cleaning water and the stop of the cleaning water become quick, and the time difference between the supply of the cleaning water to the front end of the substrate and the supply of the cleaning water to the rear end of the substrate, the supply of the cleaning water to the front end of the substrate The time difference between when the cleaning is stopped and when the supply of cleaning water to the rear end of the substrate is stopped can be shortened, and the start and end timings of the cleaning process can be made to match at each part of the substrate. It is possible to reduce cleaning unevenness that occurs at the same time. Further, the transport speed V
By making 4 and V6 substantially coincide with each other, the time from the supply of the cleaning water to the substrate front end to the stop is almost equal to the time from the supply of the cleaning water to the substrate rear end to the stop. The time when the cleaning water acts on the front end of the substrate and the time when the cleaning water acts on the rear end of the substrate can substantially coincide with each other, and development unevenness can be more effectively reduced. In the air knife chamber 53, the air knife 531
However, the moving speed of the substrate at this time is V7, which can be sufficiently slowed down, and the drying process is surely performed.

【0031】以下、具体的な数値例を用いて搬送速度を
説明する。基板の搬送方向の長さを700mmとする
と、約100mm程度の間隔をあけないと、前後の基板
が重なる搬送不良を起こしやすい。したがって、32s
/枚の能力で基板を処理するとすると、基板の搬送速度
は、800/32=25mm/s以上としなければなら
ない。一方、乾燥部70でエアーナイフ531によって
基板の十分な水切りを行うためには、基板の搬送速度
は、33.3mm/s以下とする必要があるものとす
る。以上の条件を満たすため、搬送速度の範囲は、25
mm/s〜33.3mm/sとする必要がある。
The transport speed will be described below using specific numerical examples. Assuming that the length of the substrate in the transport direction is 700 mm, a transport defect in which the front and rear substrates overlap with each other is likely to occur unless a space of about 100 mm is provided. Therefore, 32s
If the substrates are processed with a capacity of 1 / sheet, the transport speed of the substrates must be 800/32 = 25 mm / s or more. On the other hand, in order to sufficiently drain the substrate with the air knife 531 in the drying unit 70, the transport speed of the substrate needs to be 33.3 mm / s or less. In order to meet the above conditions, the transport speed range is 25
It is necessary to set it to mm / s-33.3 mm / s.

【0032】この実施例では、投入時は搬送速度V1=
25mm/sとなるようにモータM1を制御し、搬送経
路TPのうち現像に関係する領域で搬送速度V2、V3、
V4を上記V1=25mm/s以上(例えば、V2=V4=
167mm/s、V3=25mm/s)になるようにモ
ータM1〜M6を制御する。また、搬送経路PAのうち洗
浄中における搬送速度V5を上記V1=25mm/sに等
しくなるようにモータM6〜M8を制御し、洗浄終了時に
おける搬送速度V6を洗浄開始時における上記V4=16
7mm/sに等しくなるようにモータM8、M9を制御す
る。さらに、エアナイフ531による乾燥時における搬
送速度V7をその上限値以下の25mm/sに等しくな
るようにモータM9、M10を制御する。
In this embodiment, the feeding speed is V1 =
The motor M1 is controlled so that the speed is 25 mm / s, and the transport speeds V2, V3, and
V4 is V1 = 25 mm / s or more (for example, V2 = V4 =
The motors M1 to M6 are controlled so that 167 mm / s and V3 = 25 mm / s). Further, the motors M6 to M8 are controlled so that the transport speed V5 during cleaning in the transport path PA becomes equal to V1 = 25 mm / s, and the transport speed V6 at the end of cleaning is V4 = 16 at the start of cleaning.
The motors M8 and M9 are controlled so as to be equal to 7 mm / s. Further, the motors M9 and M10 are controlled so that the transport speed V7 during drying by the air knife 531 is equal to 25 mm / s which is equal to or less than the upper limit value.

【0033】この場合、洗浄部30における基板の先端
部の水洗処理時間T1は、第1〜第3水洗部31、3
5、37の各搬送経路を800mmとし、水洗部30の
両端から第4、第5振り子センサS4、S5までの距離を
50mmとすると、T1=750/167+1600/
25+50/167=68.8sであり、基板の後端部
における水洗処理時間T2は、T2=50/167+16
00/25+750/167=68.8sであり、両者
は等しくT1=T2となる。つまり、基板の各部における
水洗時間は、均一なものとなっている。
In this case, the cleaning process time T1 of the front end of the substrate in the cleaning unit 30 is the first to third cleaning units 31, 3
If each of the conveyance paths 5 and 37 is 800 mm and the distance from both ends of the water washing section 30 to the fourth and fifth pendulum sensors S4 and S5 is 50 mm, T1 = 750/167 + 1600 /
25 + 50/167 = 68.8 s, and the water washing treatment time T2 at the rear end of the substrate is T2 = 50/167 + 16.
00/25 + 750/167 = 68.8s, and both are equal T1 = T2. That is, the washing time in each part of the substrate is uniform.

【0034】なお、上記説明では現像液の供給及び液切
り時の搬送速度V2、V4、V6を一定値167mm/s
としたが、これらをシャワー現像時の搬送速度と同様に
可変として、V2=V4=V6=25mm/s〜167m
m/sの範囲で調節することも可能である。
In the above description, the transport speeds V2, V4 and V6 at the time of supplying and draining the developing solution are set to constant values of 167 mm / s.
However, V2 = V4 = V6 = 25 mm / s to 167 m
It is also possible to adjust in the range of m / s.

【0035】以上、実施形態に即してこの発明を説明し
たが、この発明は上記実施形態に限定されるものではな
い。例えば、基板にエッチング液等の薬剤を含む各種処
理液を供給して基板表面に各種ウエット処理を施す装置
において、基板への処理液の供給と基板からの処理液の
除去とを迅速に行うことで、基板の各部で発生しやすい
処理ムラの発生を有効に防止することができるととも
に、処理後の基板の水洗を開始する際及び基板の水洗を
終了する際に水洗中よりも高速で基板を搬送することに
より、基板の各部で発生しやすい水洗ムラの発生を有効
に防止することができる。
Although the present invention has been described with reference to the embodiments, the present invention is not limited to the above embodiments. For example, in an apparatus that performs various wet treatments on the surface of a substrate by supplying various treatment liquids containing a chemical such as an etching liquid to the substrate, the supply of the treatment liquid to the substrate and the removal of the treatment liquid from the substrate can be performed quickly. In this way, it is possible to effectively prevent the occurrence of processing unevenness that tends to occur in each part of the substrate, and to start the washing of the substrate after the treatment and to finish the washing of the substrate at a higher speed than during washing. By carrying it, it is possible to effectively prevent the occurrence of washing unevenness that tends to occur in each part of the substrate.

【0036】また、洗浄部30の構成は自由であり、実
施形態のように第1水洗部31〜第3洗浄部37に分離
する必要はなく、単一の水洗槽のみとすることも可能で
ある。
Further, the structure of the cleaning section 30 is arbitrary, and it is not necessary to separate the cleaning section 30 into the first cleaning section 31 to the third cleaning section 37 as in the embodiment, and it is possible to use only a single cleaning tank. is there.

【0037】[0037]

【発明の効果】以上の説明から明らかなように、請求項
1の基板処理装置では、基板の処理を開始する際及び基
板の処理を終了する際に処理中よりも高速で基板を搬送
する処理部を備えるので、基板への処理液の供給と基板
からの処理液の除去とを迅速に行うことができ、処理中
に比較的低速で基板を搬送せざるを得ない場合であって
も、基板の各部で発生しやすい処理ムラの発生を有効に
防止することができる。さらに、請求項1の装置では、
処理部よりも基板の搬送に関し後段側に配置され処理後
の基板の水洗を開始する際及び基板の水洗を終了する際
に水洗中よりも高速で基板を搬送する水洗部を備えるの
で、基板の各部に関し、水洗の開始と水洗の終了のタイ
ミングを略正確に一致させることができる。よって、基
板の各部で発生しやすい水洗ムラの発生を有効に防止す
ることができる。
As is apparent from the above description, in the substrate processing apparatus according to the first aspect of the present invention, when the substrate processing is started and when the substrate processing is finished, the substrate is transferred at a higher speed than during the processing. Since the unit is provided, the supply of the processing liquid to the substrate and the removal of the processing liquid from the substrate can be performed quickly, and even when the substrate has to be transported at a relatively low speed during the processing, It is possible to effectively prevent the occurrence of processing unevenness that tends to occur in each part of the substrate. Further, in the apparatus of claim 1,
Since the substrate is provided with a water washing unit which is arranged on the downstream side with respect to the conveyance of the substrate with respect to the processing unit and which conveys the substrate at a higher speed than during the water washing when starting the water washing of the substrate after the treatment and ending the water washing of the substrate, For each part, the timing of the start of washing and the end of washing can be matched almost exactly. Therefore, it is possible to effectively prevent the occurrence of uneven washing with water, which is likely to occur in each part of the substrate.

【0038】また、請求項2の基板処理装置では、処理
部が薬剤を含む液体を基板の表面に供給して基板を処理
するので、基板を処理部から水洗部に移送することによ
り、基板の処理を簡易に停止することができ、かつ、基
板を均一に処理することができるとともに、基板を過剰
に処理することがない。
Further, in the substrate processing apparatus of the second aspect, since the processing unit supplies the liquid containing the chemical to the surface of the substrate to process the substrate, the substrate is transferred from the processing unit to the water washing unit. The processing can be easily stopped, the substrate can be uniformly processed, and the substrate is not excessively processed.

【0039】また、請求項3の基板処理装置では、水洗
部よりも基板の搬送に関し後段側に配置され、水洗後の
基板を一枚収容可能な基板搬送室と、当該基板搬送室よ
りも基板の搬送に関し後段側に配置され、水洗後の基板
から洗浄水を除去するエアナイフ部とをさらに備えるの
で、水洗部から出てきた基板を一時的に基板搬送室に蓄
えることができ、基板全体の水洗を終了する期間中に、
水洗処理中よりも高速で基板を搬送することができる。
しかも、基板搬送室から出てきた基板をエアナイフ部に
送り込む際には、基板の搬送速度を比較的低速にできる
ので、エアナイフ部における基板からの水分の除去を効
果的なものとできる。また、エアナイフ部と水洗部との
間に基板搬送室を介在させるので、エアナイフ部で発生
する水ミストの発生や逆流を抑制できる。
Further, in the substrate processing apparatus according to the third aspect of the present invention, the substrate transfer chamber is arranged on the rear side with respect to the transfer of the substrate with respect to the water washing section, and is capable of accommodating one substrate after the water washing, and the substrate transfer chamber rather than the substrate transfer chamber. Since it is further provided with an air knife part which is disposed on the rear side with respect to the transportation of the substrate and removes the cleaning water from the substrate after washing with water, the substrate coming out of the washing part can be temporarily stored in the substrate transport chamber, and During the period when the washing is finished,
The substrate can be transported at a higher speed than during the washing process.
Moreover, when the substrate coming out of the substrate transfer chamber is sent to the air knife part, the transfer speed of the substrate can be made relatively low, so that the removal of water from the substrate in the air knife part can be made effective. Further, since the substrate transfer chamber is interposed between the air knife portion and the water washing portion, it is possible to suppress the generation of water mist and backflow generated in the air knife portion.

【0040】また、請求項4の基板処理方法は、基板の
処理を開始する際及び基板の処理を終了する際に、処理
中よりも高速で基板を搬送するので、基板への処理液の
供給と基板からの処理液の除去とを迅速に行うことがで
き、処理中に比較的低速で基板を搬送せざるを得ない場
合であっても、基板の各部で発生しやすい処理ムラの発
生を有効に防止することができる。さらに、請求項4の
方法では、処理後の基板の水洗を開始する際及び基板の
水洗を終了する際に、水洗中よりも高速で基板を搬送す
るので、基板の各部に関し、水洗の開始と水洗の終了の
タイミングを略正確に一致させることができる。よっ
て、基板の各部で発生しやすい水洗ムラの発生を有効に
防止することができる。
Further, according to the substrate processing method of the fourth aspect, when the substrate processing is started and when the substrate processing is finished, the substrate is transported at a higher speed than during the processing, so that the processing liquid is supplied to the substrate. The process liquid can be quickly removed from the substrate, and even if the substrate has to be transported at a relatively low speed during the process, the occurrence of process unevenness that is likely to occur in each part of the substrate is prevented. It can be effectively prevented. Further, according to the method of claim 4, when starting the washing of the treated substrate and finishing the washing of the substrate, the substrate is conveyed at a higher speed than that during the washing, so that the washing of each part of the substrate is started and stopped. It is possible to match the timing of the end of washing with water almost exactly. Therefore, it is possible to effectively prevent the occurrence of uneven washing with water, which is likely to occur in each part of the substrate.

【図面の簡単な説明】[Brief description of drawings]

【図1】この発明の一実施形態の基板洗浄装置の構造を
説明するブロック図である。
FIG. 1 is a block diagram illustrating a structure of a substrate cleaning apparatus according to an embodiment of the present invention.

【図2】図1の装置の要部を説明する図である。FIG. 2 is a diagram illustrating a main part of the apparatus of FIG.

【図3】図1の装置の要部を説明する図である。FIG. 3 is a diagram illustrating a main part of the apparatus in FIG.

【図4】図1の装置の動作を説明する図である。FIG. 4 is a diagram explaining the operation of the apparatus of FIG.

【符号の説明】[Explanation of symbols]

10 現像部 11 投入部 13 プリウエット部 15 ディップ部 17 液切り部 30 水洗部 31 第1水洗部 35 第2水洗部 37 第3水洗部 50 乾燥部 51 基板搬送室 53 エアーナイフ室 531 エアーナイフ R ローラ 10 Development Department 11 Input section 13 Pre-wet part 15 dip section 17 Drainer 30 Washing department 31 First flush section 35 Second Washing Section 37 Third Washing Section 50 Drying section 51 Substrate transfer chamber 53 Air knife room 531 air knife R roller

───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7,DB名) H01L 21/027 G01F 7/26 ─────────────────────────────────────────────────── ─── Continuation of front page (58) Fields surveyed (Int.Cl. 7 , DB name) H01L 21/027 G01F 7/26

Claims (4)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 基板を搬送しつつ当該基板に所定の処理
を施す基板処理装置において、 前記基板の処理を開始する際及び前記基板の処理を終了
する際に、処理中よりも高速で前記基板を搬送する処理
部と、 前記処理部よりも前記基板の搬送に関し後段側に配置さ
れ、処理後の前記基板の水洗を開始する際及び前記基板
の水洗を終了する際に、水洗中よりも高速で前記基板を
搬送する水洗部とを備えることを特徴とする基板処理装
置。
1. A substrate processing apparatus for performing a predetermined process on a substrate while transporting the substrate, wherein the substrate is processed at a higher speed than during processing when the processing of the substrate is started and when the processing of the substrate is finished. And a processing unit for transporting the substrate, which is arranged on a rear stage side with respect to the transportation of the substrate with respect to the processing unit, and when starting the washing of the substrate after the treatment and ending the washing of the substrate, the speed is higher than during washing. And a water washing unit for transporting the substrate.
【請求項2】 前記処理部は、薬剤を含む液体を前記基
板の表面に供給して前記基板を処理することを特徴とす
る請求項1記載の基板処理装置。
2. The substrate processing apparatus according to claim 1, wherein the processing section supplies a liquid containing a chemical to a surface of the substrate to process the substrate.
【請求項3】 前記水洗部よりも前記基板の搬送に関し
後段側に配置され、水洗後の基板を少なくとも一枚収容
可能な基板搬送室と、当該基板搬送室よりも前記基板の
搬送に関し後段側に配置され、水洗後の基板から前記洗
浄水を除去するエアナイフ部とをさらに備えることを特
徴とする請求項1記載の基板処理装置。
3. A substrate transfer chamber, which is disposed on a rear side with respect to the transfer of the substrate with respect to the water washing section and is capable of accommodating at least one washed substrate, and a rear side with respect to the transfer of the substrate with respect to the substrate transfer chamber. 2. The substrate processing apparatus according to claim 1, further comprising an air knife unit that is disposed in the substrate and removes the cleaning water from the substrate after being rinsed with water.
【請求項4】 基板を搬送しつつ当該基板に所定の処理
を施す基板処理方法において、 前記基板の処理を開始する際及び前記基板の処理を終了
する際に、処理中よりも高速で前記基板を搬送し、処理
後の前記基板の水洗を開始する際及び前記基板の水洗を
終了する際に、水洗中よりも高速で前記基板を搬送する
ことを特徴とする基板処理方法。
4. A substrate processing method for carrying out a predetermined process on a substrate while transporting the substrate, wherein the substrate is processed at a higher speed than at the time of starting the process of the substrate and ending the process of the substrate. The substrate processing method is characterized in that the substrate is transported at a higher speed than when the substrate is being rinsed, when starting to rinse the substrate after the treatment and when finishing the rinse of the substrate.
JP8809897A 1997-04-07 1997-04-07 Substrate processing apparatus and method Expired - Fee Related JP3481416B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8809897A JP3481416B2 (en) 1997-04-07 1997-04-07 Substrate processing apparatus and method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8809897A JP3481416B2 (en) 1997-04-07 1997-04-07 Substrate processing apparatus and method

Publications (2)

Publication Number Publication Date
JPH10284380A JPH10284380A (en) 1998-10-23
JP3481416B2 true JP3481416B2 (en) 2003-12-22

Family

ID=13933402

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8809897A Expired - Fee Related JP3481416B2 (en) 1997-04-07 1997-04-07 Substrate processing apparatus and method

Country Status (1)

Country Link
JP (1) JP3481416B2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3930244B2 (en) * 2000-11-10 2007-06-13 東京エレクトロン株式会社 Processing equipment
TWI226077B (en) * 2001-07-05 2005-01-01 Tokyo Electron Ltd Liquid processing apparatus and liquid processing method
JP3765411B2 (en) * 2002-05-29 2006-04-12 東京エレクトロン株式会社 Development processing method and apparatus
CN102969214B (en) * 2011-08-31 2017-08-25 圆益Ips股份有限公司 Substrate board treatment and the base plate processing system with it
JP6360404B2 (en) * 2014-09-30 2018-07-18 株式会社Screenホールディングス Substrate processing apparatus and substrate processing method
CN109103127B (en) * 2018-08-08 2021-04-30 安徽宏实自动化装备有限公司 Wafer film removing and cleaning device and method with horizontal conveying type leaf
JP7177628B2 (en) * 2018-08-20 2022-11-24 株式会社Screenホールディングス SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, AND SUBSTRATE PROCESSING SYSTEM

Also Published As

Publication number Publication date
JPH10284380A (en) 1998-10-23

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