201026405 六、發明說明： 【發明所屬之技術領域】 本發明係關於-種在對液晶顯示裝置仏⑶)用、電槳顯示 器（plasmadisplayKPDp)用、有機發光二極體(di〇de)(〇LED) 用、場發射式顯示器（FED)用、真空螢光顯示器（VFD)用等 玻璃基板或磁/光碟（出认)用玻璃⑻咖)/陶究(ceramic)基 板半導體晶圓(wafer)、電子裝置(device)基板等各種基板， 進行阻劑(resist)剝離處理、蚀刻（扣也丨叩)處理等藥液處理後 進行洗淨處理之基板處理褒置。 【先前技術】 在例如LCD、PDP等裝置（device)之製造程序(pr〇cess) 中，當對基板主面供應各種藥液並進行諸如阻劑剝離處理、 蝕刻（etching)處理等藥液處理後，對基板進行水洗處理情況 時，首先，在置換水洗室（循環水水洗處理部）中對剛完成藥 液處理後之基板主面供應洗淨水，將基板上之藥液以洗淨水 置換，然後，在直接水洗室（新水水洗處理部）中，對基板主 面供應純水而水洗基板，然後，乾燥處理基板。此時，在直 接水洗室中進行的基板洗淨係使用純水(新水），而在置換水 洗室中進行的基板洗淨，則將在直接水洗室中所使用的水回 收於循環水槽(tank) ’將其作為洗淨水(循環水)使用，由此 可節約純水使用量（例如，參照曰本專利特開平U 162918 號公報）。 098130893 4 201026405 又’亦有使用以下裝置：對經藥液處理後之基板進行水洗 處理的水洗處理部由置換水洗室（第1水洗部）、第2水洗室 (第2水洗部）、及直接水洗室（第3水洗部)構成，首先，在 ， 置換水洗室中，將第2水洗室中所使用的水回收於第1循環 • 水槽’將其作為洗淨水使用’對剛完成藥液處理後之基板主 面供應洗淨水，將基板上之藥液以洗淨水置換後，於第2 水洗室中’將直接水洗室中所使用的水回收於第2循環水 ❹槽，將其作為洗淨水使用，對主面上藥液經洗淨水置換之基 板進行水洗處理，最後於直接水洗室中，對基板主面供應純 水而結束水洗基板(例如，參照日本專利特開平10—284379 號公報）。 圃¢)係表示習知基板處理裝置之概略構成^ 示性表示基板處理裝置中水洗處理部一部分之圖。 參 該基板處理裝置之水洗處理部由在藥液處理部僅圖示 一部分)後段侧依序連設之置換水洗部（第丨水洗部”、第2 水洗部3、及直接水洗部4(僅圖示一部分)所構成。在直接 水洗部4後段侧設有乾燥處理部（未圖示）。 +置換水洗部5具備有··置換水洗室（第j水洗室⑽，鄰接 藥液處理部1之藥液處理室38設置，具有基_人口似 及基板搬出口 44，·複數搬送輥⑽ler)(未圖示），將搬入於該 置換水洗室4G内之藥液處理後之基板w，以相對水平面朝 與基板搬送方向相正交方向呈傾斜之姿勢加以支撐，在置換 098130893 5 201026405 水洗室40内使其朝水平方向往復移動；入口狹縫喷嘴(sm nozzle)46,配設於置換水洗室40内之基板搬入口 42附近， 對搬入至置換水洗室40内之基板W上面，涵蓋基板界之 寬度方向整體簾幕(curtain)狀吐出洗淨水；及上部喷霧喷嘴 (spray nozzle)48及下部喷霧喷嘴50，朝在置換水洗室4〇内 以水平方向往復移動的基板W上/下雙面分別吐出洗淨水。 上部喷霧喷嘴48及下部喷霧喷嘴50沿基板搬送方向且分別 相互平行地設置有複數個’各喷霧喷嘴48、50中朝基板搬 ❹ 送方向排成一列設有複數個吐出口。在置換水洗室4〇底部 設有排液路52 ’用於排出經流下於置換水洗室4〇内底部之 使用過洗淨水。 第2水洗部3具備有：第2水洗室54，鄰接置換水洗室 40而設置’具有基板搬入口 56及基板搬出口 58 ;複數搬送 輥(未圖式），將從置換水洗室40搬入第2水洗室54内之基 板W，以相對於水平面朝與基板搬送方向相正交之方向呈 ❹ 傾斜之姿勢加以支撐，在第2水洗室54内朝水平方向搬送； 及上部喷霧喷嘴60與下部喷霧喷嘴62等，朝在第2水洗室 54内以水平方向搬送的基板w上/下雙面分別吐出洗淨 水。上部喷霧喷嘴60及下部喷霧喷嘴62沿基板搬送方向且 相互平行地各設有複數個，各喷霧喷嘴6〇、62中朝基板搬 送方向呈一列地設有複數個吐出口。第2水洗室54底部設 置有循環排水路64，用於排出經流下於第2水洗室54内底 098130893 6 201026405 ^之使料洗淨水，#賴水路μ連通連接於循環水槽 此外，於猶環水槽66，連通連接有流路連接於純水(新 7 )供應源之純水供應路68，更進一步，連通連接有在直接 •水洗部4之直接水洗室7()底部所設置的洗淨水供應路 •循》纟槽66底部分料通連财洗淨水供聽％及洗淨水 供應路8〇，該洗淨水供應路％介設有送液栗(pump)74，分 別流路連接於置換水洗室4〇内之入口狹縫喷嘴私、及上部 喷霧噴嘴48與下部喷霧嘴嘴5〇，該洗淨水供應路8〇介設 分贱料胁第2水洗室⑽之上部嘴霧 與下部噴霧噴嘴62。更進-步，第2水洗室54底 水路82，排水路82排出基板W洗淨時所使用從 I八上流下至第2水洗室54内底部之使用過洗淨水，其 參 入第H+刀朗84’細換擇—齡在基板w未被搬 洗至5 4内的狀態下，將基板W洗淨時未使用而直 接^下於第2水洗室54内底部之洗淨水，送返至循環水槽 66 ° 直接水洗部4之構成雖僅圖示一部分但其與第2水洗部 :同。然^ ’於直接水洗室7G内之上部㈣嘴嘴86與下 3喷霧料88,供雜水(新水），㈣狀純林再循環使 而且’在直接水洗部4中所使用的洗淨水經由洗淨水供 應路72而送入循環水槽％。 【發明内容】 098130893 201026405 (發明所欲解決之問題） 上述習知基板處理裝置中，使剛在藥液處理室38内經藥 液處理後的基板W在置換水洗室40内一邊朝水平方向往復 移動’一邊從上部喷霧喷嘴48與下部喷霧喷嘴50朝基板w 的上/下雙面不間斷地吐出洗淨水，而將基板w上之藥液置 換為洗淨水進行。因此，在置換水洗室40中需要大量洗淨 X因而在水洗處理部中所使用的純水量、即供應至第2 水洗部3之循環水槽66的純水、及供應至直接水洗部4之 上部噴霧噴嘴86與下部喷霧噴嘴88的純水量亦會增加。 又，在置換水洗室40中所使用的洗淨水全部將被排廢，因 此在置換水洗室4G巾會使敎㈣淨水，結果，排液處理 量亦會變多。更進一步，因為在置換水洗室4〇中一邊使基 板W朝水平方向往復移動，一邊進行水洗處理，因而有處 理時間變長的問題。 本發明有鑑於如上述情況而完成，其目的在於提供一種在 水洗處理經藥液處理後基板時，可節約純水使用量且同時減 少排液量，又可縮短水洗處理時間之基板處理裝置。 (解決問題之手段） 第1發明之基板處理裝置，其具備有：水洗室，對藥液處 理後之基板進行水洗處理；基板搬送手段，配設於該水洗室 内，並搬送基m辣供解段，朝由減板搬送手段 搬送的基板主面供雜淨水，其賴在於具有釘構成。亦 098130893 201026405 即，上述水洗室為其在基板搬送方_長度較基板在基板搬 送方向的尺寸雜、且具相人基板以σ與㈣基板的出 口之封閉形態’此外，上述基板搬送手段朝—方向連續搬送 *經搬入於上述水洗室内之基板，而從水洗室内將其搬出，在 水洗Μ未使基板純㈣或停止。*且，±述洗淨水供應 手段構成上具備有：入口噴嘴，配設在上述水洗室内之入口 附近，而對基板搬送方向形成交叉，並對基板主面涵蓋基板 ©寬度方向整體吐出洗淨水；高壓喷嘴，被配設於該入口喷嘴 之基板搬送方向前方側，而對基板搬送方向形成交又，高壓 吐出洗淨水至基板主面’堵住基板上的藥液朝基板搬送方向 前方侧之流動，將基板上藥液急速置換為洗淨水；切換手 段，切換上述入口喷嘴及上述高壓喷嘴之洗淨水吐出及停止 吐出，及控制手段，控制上述切換手段，在基板搬入於上述 水洗室内前，開始從上述入口噴嘴及上述高壓喷嘴吐出洗淨 ❿水，在從上述水洗室内搬出基板後，則停止從上述入口噴嘴 及上述高壓喷嘴吐出洗淨水。其更具備有：氣體噴嘴，被配 設於上述水洗室内之出口側，而對基板搬送方向形成交又， 朝基板主面以相對正下方向或基板搬送方向呈斜逆之方向 喷出氣體，阻止藥液附著在基板而被帶出於水洗室外；及排 水手段’排出經流下於上述水洗室内底部之洗淨水。 第2發明就第1發明所記載之基板處理裝置中，上述入口 喷嘴係狹縫噴嘴’其具有沿長邊方向的狹縫(slit)狀吐出口， 098130893 n 201026405 從該狹缝狀吐出口朝基板主面’以相對正下方向而傾斜至基 板搬送方向前方側之方向簾幕狀吐出洗淨水。 第3發明就第i或第2發明所記載之基板處理褒置中上 述南壓喷嘴係串聯高密度扇形噴霧喷嘴，其具有在相對基板 搬送方向呈交又之方向相互靠近並設之複數吐出口，從各吐 出口分別以扇狀高壓吐出洗淨水。 第4發明就第丨或第2發明所記載之基板處理裝置中，上 述间壓喷嘴係二流體噴霧喷嘴，其具有在相對基板搬送方向 呈交叉之方向相互靠近並設之複數吐出口，從各吐出口分別 透過氣體壓力使洗淨水霧化而加以吐出。 第5發明就第1或第2發明所記載之基板處理裝置中，上 述南壓喷嘴附設有防止從吐出口吐出之洗淨水霧(mist)飛散 之罩體(hood)。 第6發明就第5發明所記載之基板處理裝置中，併設有通 過上述罩體抽吸排出洗淨水霧之霧抽吸裝置。 第7發明就第1或第2發明所記載之基板處理裝置甲，在 ^述水洗室後段側設置之第2水洗室中經使用而回收的洗 淨水#刀，係供應至上述入口喷嘴及上述高壓喷嘴。 (發明效果） 第1發明之基板處理裝置中，對搬人於水洗室内 而經衆液 處理後的基板，從人σ附近賴置之人口喷嘴，涵蓋基板寬 度方向整體吐出洗淨水，藉此將基板上餘以洗淨水稀釋並 098130893 201026405 沖洗。經通過入口噴嘴之配設位置後而殘留於基板上的藥液 與洗淨水之混合液朝前方的流動，會因從入口喷嘴前方侧所 設置之高壓噴嘴朝基板主面高壓吐出的洗淨水而受堵住。如 此在稀釋藥液朝前方流動受堵住之狀態下，基板朝前方移 動，因此在基板通過高壓噴嘴配設位置期間’基板上之藥液 急速被洗淨水所置換。而且，在從水洗室内搬出基板前，基 板上液體朝前方之流動均因從氣體喷嘴朝基板主面喷出之 參氣體壓力而受堵住。結果，可有效阻止藥液附著在基板上而 被帶出於水洗室外。該等一連串水洗處理，在基板朝基板搬 送方向長度較基板在基板搬送方向尺寸還短的水洗室内搬 入’並在水洗室内朝一方向連續搬送而自水洗室内搬出的短 時間内進行。此外，因為基板上之藥液因從高壓喷嘴朝基板 主面高壓吐出的洗淨水而被洗淨水急速地置換，因此以較小 量洗淨水的使用即可效率佳地進行水洗處理。而且，流下於 ®水洗室内底部的洗淨水經排水手段排出，藉由控制手段控制 切換手段，在基板搬入於水洗室内之前，開始從入口噴嘴與 高壓噴嘴吐出洗淨水，在從水洗室内搬出基板後，停止從入 口喷嘴與高射嘴吐出洗淨水，因而可抑制洗淨水的吐出量 與排液量。 ‘ ®此’當使用第1發明之基板處理裝置，可大幅節約水洗 處賴藥液處職基㈣之純水錢4，可減少排液量，可 大幅縮短水洗處理時間。 098130893 11 201026405 第2發明之基板處理裝置中，對經搬入於水洗室内而經藥 液處理後之基板’從狹縫喷嘴之狹縫狀吐出口涵蓋基板寬度 方向整體以簾幕狀吐出洗淨水，藉此可將基板上藥液以洗淨 水效率佳地進行稀釋並沖洗。 第3發明之基板處理裝置中，從串聯高密度扇形噴霧喷嘴 之複數吐出口朝基板主面高壓吐出洗淨水，藉此可確實堵住 基板上所殘留藥液與洗淨水的混合液朝前方流動。 第4發明之基板處理裝置中，從二流體喷霧喷嘴之複數吐 ❹ 出口以空氣(air)等氣體壓力使洗淨水霧化，並與氣體一起朝 基板主面吐出，可確實堵住基板上所殘留藥液與洗淨水之混 合液朝前方流動。 第5發明之基板處理裝置中，從高壓喷嘴之吐出口高壓吐 出洗淨水，而會產生洗淨水霧，但可透過罩體防止該霧飛散。 第6發明之基板處理裝置中，由霧抽吸裝置抽吸排出洗淨 水霧，可防止含有藥液的洗淨水霧再度附著於基板上。 參 第7發明之基板處理裝置中，可提高純水之利用效率。 【實施方式】 以下，參照圖式說明本發明較佳之實施形態。 圖1表示本發明實施形態之一例，為模式性表示基板處理 裝置中水洗處理部一部分之圖。 該基板處理裝置之水洗處理部由以下所構成：在藥液處理 部1(僅圖示-部分)後段侧依序連設之置換水洗部（第i水洗 098130893 12 201026405 =二24Γ部3及直接水洗部4(僅圖示—部分）。在直 5洗=後段側設有乾燥處理部(未圖示）。該基板處理裝 直接2水洗部2以外之藥液處理部卜第2水洗部3及 中與Γ/4之構成’與圖6之上述說明裳置相同，圖1 Π6㈣的各構成要件與構件，亦料㈣的元件符 號’省略該等說明。 該基板處理裝置中水洗處理部之置換水洗部2具備有：置 ❹換水洗室（第1水洗室）1G，鄰接藥液處理部！之藥液處理室 38而設置’具有基板搬人口 12及基板搬出口 14;複數搬送 輥(未圖示），使搬入該置換水洗室1〇内而經藥液處理後之 基板W，以相對於水平面朝與基板搬送方向相正交之方向 傾斜之姿勢(基板W近前侧較低）而加以支撐，並在置換水 洗室10内在一方向連續地朝水平方向搬送；入口喷嘴16， 配設於置換水洗室10内之基板搬入口 12附近；高壓噴嘴 ® 18’在基板搬送方向被配設於較該入口噴嘴16更靠前方 側；下部噴霧喷嘴20，被配設於基板搬送路下方；及一對 空氣喷嘴22、22，隔著基板搬送路而上下被配設於置換水 洗室10内之出口側。置換水洗室10為封閉形態，該基板搬 入口 12設有開閉擒門（shutter)(未圖示）。 置換水洗室10全長(基板搬送方向長度)短於基板W之長 度尺寸（沿基板搬送方向之方向尺寸）。例如，當處理之基板 W長度為2.4m〜2_5m時’置換水洗室1〇全長被設為 098130893 13 201026405 lm〜1.5m。而且，基板W在置換水洗室l〇内不會往復移動 或暫時停止，例如在全長lm之置換水洗室10内部，由搬 送輥進行基板W之高速搬送，使具有2.5m搬送方向長度之 基板W以15秒〜20秒鐘通過。又，基板w在基板搬送方 向，例如隔開1片左右之間隔逐次搬入於置換水洗室10内。 置換水洗室10底部設有排液路24，用於排出經流下於置換 水洗室10内底部之使用過洗淨水。在置換水洗室1〇使用後 之洗淨水，全部通過排液路24排出。此外，在置換水洗室 10之頂部設有排氣管90,用於從置換水洗室10内排出含洗 淨水霧之空氣。 入口喷嘴16由具有沿長邊方向狹縫狀吐出口之狹缝喷嘴 所構成。該入口噴嘴16被配置為平行於基板w上面且正交 於基板搬送方向，並設為從鉛直方向朝斜前方傾斜。而且， 從入口喷嘴16之狹縫狀吐出口，朝搬入至置換水洗室1〇 内之基板W上面，涵蓋基板w寬度方向整體，以簾幕狀且 相對其正下方向沿朝基板搬送方向前方侧傾斜之方向吐出 洗淨水。另外，亦可置換狹縫喷嘴，改成使用多數微小吐出 口沿長邊方向以一列設置的喷嘴，並從該噴嘴之多數微小吐 出口涵蓋基板W寬度方向整體吐出洗淨水。 作為高壓喷嘴18，可如圖2從基板搬送方向前方側所觀 看到之模式前視圖所示，使用串聯高密度扇形噴霧喷嘴 18a，其在基板搬送方向的交叉方向所配置之喷霧管 098130893 14 201026405 pipe)92a ’沿長邊方向設有一列相互靠近之複數喷嘴部 94a，從該各嘴嘴部94a之吐出口分別以扇狀高壓吐出洗淨 水。在該串聯高密度扇形喷霧嘴嘴18a之噴霧管92a，如後 述，連通連接洗淨水供應路30，該洗淨水供應路30連通連 接於循環水槽66，並介設有送液泵32。串聯高密度扇形噴 霧喷嘴18a被設置於如下高度位置處，例如從喷嘴部94a之 吐出口至基板W上面間的距離達1()mm〜3〇〇mm，且複數喷 ❹嘴部94a例如以20mm〜200mm間距設置。此種高壓喷嘴18 以平行於基板W上面且相對基板搬送方向呈正交、或相對 基板搬送方向的正交方向呈斜方向之方式配置（相對於入口 喷嘴16朝近前侧開啟方向傾斜配置）。從該高壓喷嘴丨8之 吐出口 ’朝搬送基板W上面，涵蓋基板w寬度方向整體吐 出高壓（例如0.2MPa壓力）洗淨水。 另外’亦可置換串聯高密度扇形喷霧喷嘴18a，改為使用 ®具有同等作用之高壓喷嘴。例如，可如圖3從基板搬送方向 的前方侧所觀看到模式前視圖所示，使用二流體喷霧喷嘴 18b，其在相對基板搬送方向呈交叉方向配置之二流體喷霧 集管(spray header)92b，沿其長邊方向設有一列相互靠近之 複數二流體噴嘴部94b，從該等各二流體喷嘴部94b之吐出 - 口分別以空氣等氣體壓力霧化洗淨水而加以吐出。在該二流 體喷霧喷嘴18b之二流體喷霧集管92b，連通連接洗淨水供 應路30,同時連通連接例如流路連接於空氣供應源之空氣 098130893 15 201026405 供應路96。二流體喷霧喷嘴18b被設置於如下高度位置處， 例如從該二流體喷嘴部94b之吐出口至基板W上面間的距 離達10mm〜100mm，且複數二流體噴嘴部94b例如以 20mm〜100mm間距設置。 再者，在高壓喷嘴18，亦可附設用於防止該吐出口所吐 出的洗淨水霧飛散之罩體26。更進一步，亦可於罩體26併 設霧抽吸裝置’該霧抽吸裝置連通連接於排氣管28，並通 過該排氣管28與罩體26真空抽吸洗淨水霧而加以排出。 〇 下部喷霧喷嘴20沿基板搬送方向且相互平行地分別設置 有複數個’在下部喷霧喷嘴20朝基板搬送方向設有一列複 數個吐出口。從該下部喷霧喷嘴20朝搬送之基板W下面吐 出洗淨水，水洗基板W下面侧。在該下部喷霧喷嘴2〇和入 口喷嘴16及高壓喷嘴18’分別流路連接洗淨水供應路3〇， 並在洗淨水供應路30介設有送液泵32，而該洗淨水供應路 30連通連接於第2水洗處理部3中所設置之循環水槽的底❹ 部。而且，構成如下流路，從循環水槽66内通過洗淨水供 應路30’分別朝入口噴嘴16、高壓噴嘴18及下部喷霧噴嘴 20供應洗淨水。 洗淨水供應路30在送液果32之吐出側分支，該分支路連 通連接於循環水槽66而成域淨水返回路徑98 。而且，在 較洗淨水供應路3G之分支位置更靠下游侧介插人開閉控制 間1〇0 ’同時在洗淨水返回路徑98介插開閉控制閥1〇2,擇 098130893 16 201026405 一開啟兩開閉控制閥100、102而進行流路的切換。此外， 在置換水洗室10之基板搬入口 12近前侧（圖示例中藥液處 理室38内之出口附近），配設有檢測基板w前端位置之基 板位置感測器（sensor)104，在置換水洗室1〇之基板搬出口 14前方側（圖示例中第2水洗室54内之基板搬入口 56附 近）’配設有檢測基板w後端位置之基板位置感測器1〇6。 從各基板位置感測器104、106分別輸出的檢測信號，輸入 ®於控制電路108’控制電路108根據該檢測信號輸出控制信 號，可構成分別控制各開閉控制閥100、102之開閉動作。 而且，藉由控制電路108，當基板W未搬入置換水洗室1〇 内時’則不使洗淨水從入口喷嘴16、高壓噴嘴18及下部嘴 霧喷嘴20吐出，在基板W剛搬入置換水洗室1〇内前開 始從各喷嘴16、18、20吐出洗淨水，然後，在從置換水^ 室10内搬出基板W前的期間，繼續從各噴嘴16、18、加 參吐出洗淨水’在從置換水洗室10内搬出基板琛後，控制開 閉控制閥100、102之開閉動作，停止從各喷嘴16、、加 吐出洗淨水。 另外，從入口喷嘴16、高壓喷嘴I8及下部喷霧喷嘴20 切換洗淨水吐出與停止吐出之構成，不受限於上述說明或圖 示。例如，不採用如使洗淨水供應路3〇分支來設置洗淨水 返回路& 98、並同時設置切換流路的開閉控制閥_、⑽ 之流路構成’而制啟/關閉(〇n/〇ff)控制送液泵32之驅動與 098130893 17 201026405 停止。此外，上述說明及圖示例中，將檢測基板w前端位 置之基板位置感測器104配設於藥液處理室38内之出口附 近，但亦可將基板位置感測器104配設於藥液處理室38内 之入口附近’由基板位置感測器104檢測到基板w前端位 置時經一定時間後(基板W前端通過藥液處理室；38出口 前）’進行程式(program)控制，開始從各喷嘴π、18、20 吐出洗淨水。 上下一對空氣噴嘴(air nozzle)22、22分別平行於傾斜姿勢 @ 基板W之上/下面，且相對基板搬送方向的正交方向使近前 側開放而傾斜配置。該空氣噴嘴22連通連接有空氣供應管 34,從空氣喷嘴22朝基板|的上/下雙面將空氣(逆向空氣 (C〇Unter㈣㈣基板搬送方向朝斜逆方向或正下方向噴 出’而該空氣供應管34流路連接於空氣供應源。另外，亦 可置換线’改為將其他氣體(例如氮氣等）朝基板w的各 面喷出。 參 在具有上述構成之基板處理《置中，當剛在藥液處理室 38經樂液處理後的基板w搬入至置換水洗室⑺内， 則從入口喷嘴16的狹縫狀吐一朝基㈣ 向整體以簾幕狀吐出洗淨水。 筧度方 圖4模式侧視圖所示，以從 該入口喷嘴16以簾幕狀吐出 藥液，從基板W上沖洗掉二，水A，來稀釋基板〜上 口P刀藥液B。接著，從高壓喷嘴 18的吐出口朝基板W上 t 整噴嘴 土出w壓洗淨水。如圖4所示’ 098130893 18 201026405 以由該高壓喷嘴丨8吐出的洗淨水A所形成水壁，在通過入 口喷嘴16之配設位置後’而殘留於基板W上之藥液與洗淨 水之混合液C朝前方流動受堵。如此在藥液與洗淨水之混 合液C朝前方流動受堵住之狀態下，使基板W朝前方移動， 因此在基板W通過高壓喷嘴18的配設位置期間，基板w 上藥液會被洗淨水急速置換。此外，在此期間，對基板W 的下面，從下部喷霧喷嘴20之吐出口連續吐出洗淨水，而 _ 水洗基板W下面。然後，在從置換水洗室1〇内搬出基板W 前，從上、下一對空氣喷嘴22、22朝基板W的上下雙面分 別吹抵空氣。如圖5模式側視圖所示，透過從該一對空氣喷 嘴22、22朝基板W上下雙面所喷出空氣〇之壓力，堵住 基板W上、下面所附著液體E朝前方的流動，可有效阻止 樂液附者在基板W"而被帶出於置換水洗室1〇外。 以上一連串水洗處理在基板W搬入於置換水洗室1〇内， ❿在置換水洗室10内朝一方向連續搬送，而從置換水洗室1〇 内搬出的短時間内（例如15秒〜20秒鐘）進行。此外，因為藉 由從高壓喷嘴18朝基板W上面高壓吐出的洗淨水，將基板 W上之藥液急速置換為洗淨水，因此可以較小量洗淨水使 用效率佳地騎核處理。更進—步，在練w未搬入於 置換水洗室1G㈣，停止洗淨水吐出，藉此可更加減少洗 淨水的使用量。而且’可有效地阻止藥液殘留於基板w上 而被帶出至置換水洗室10外’因此可降低洗淨水在第2水 098130893 19 201026405 洗室54内用於基板W水洗後遭受污染。結果，可提高第2 水洗室54中所使用洗淨水之循環使用率，更進一步可更加 節約純水使用量。 另外’在上述實施形態中，以傾斜姿勢支撐基板W，並 在置換水洗室10内朝水平方向搬送，但亦可以水平姿勢支 摔並搬送基板。此外，本發明除阻劑剝離處理、餘刻處理外， 亦可廣泛適用於經各種藥液處理後的基板水洗處理。 【圖式簡單說明】 圖1表示本發明實施形態之一例，為模式性表示基板處理 裝置中水洗處理部一部分之概略構成圖。 圖2為表示作為圖1所示基板處理裝置之置換水洗部構成 要件之高壓喷嘴-例之圖，為從基板搬送方向前方侧所觀看 到串聯高密度扇形喷霧噴嘴之模式前視圖。 圖3為表示作為同^所示基板處理裝置之置換水洗部構 成要件之高㈣嘴-狀圖，為從基板搬送方向前方酬觀〇 看到二流體喷霧喷嘴之模式前視圖。 置換水洗部中處理情況 圖4為表示圖1所示水洗處理部之 之模式侧視圖。 中處 圖5為表科為_丨所示水洗處理部之置換水洗部 理情況之模式侧視圖。 ^表示習知基板處理裝置之構成例，為模式性表示該水 洗處理部一部分之概略構成圖。 098130893 20 201026405 【主要元件符號說明】 藥液處理部 2 3 4 5 10 φ 12 ' 42 > 56 14、44、58 16 18 18a 18b 20 〇 22 24 26 28 30 、 72 、 76 ' 80 32、74、78 34 38 置換水洗部（第1水洗部） 第2水洗部 直接水洗部 置換水洗部（第1水洗部） 置換水洗室（第1水洗室） 基板搬入口 基板搬出口 入口喷嘴 高壓喷嘴 串聯高密度扇形喷霧喷嘴 二流體喷霧喷嘴 下部喷霧喷嘴 空氣喷嘴 排液路 罩體 排氣管 洗淨水供應路 送液泵 空氣供應管 藥液處理室 098130893 21 201026405 40 置換水洗室（第1水洗室） 46 入口狹縫喷嘴 48 上部喷霧喷嘴 50 下部喷霧喷嘴 52 排液路 54 第2水洗室 60、86 上部喷霧喷嘴 62 ' 88 下部喷霧喷嘴 64 循環排水路 66 循環水槽 68 純水供應路 70 直接水洗室 82 排水路 84 三向切換閥 90 排氣管 92a 喷霧管 92b 二流體喷霧集管 94a 喷嘴部 94b 二流體喷嘴部 96 空氣供應路 98 洗淨水返回路徑 100 ' 102 開閉控制閥 098130893 22 201026405 104、106 108201026405 VI. Description of the Invention: [Technical Field] The present invention relates to a liquid crystal display device (3), an electric plasma display (plasma display KPDp), and an organic light emitting diode (〇LED) ) Glass for use in field emission display (FED), vacuum fluorescent display (VFD), or glass for magnetic/disc (recognition) / ceramic substrate wafer (wafer), A substrate processing apparatus that performs a cleaning process after a chemical liquid treatment such as a resist peeling process or an etching process is performed on various substrates such as an electronic device substrate. [Prior Art] In a manufacturing process of a device such as an LCD or a PDP, various chemical liquids are supplied to the main surface of the substrate, and chemical liquid treatment such as a resist stripping treatment or an etching treatment is performed. After the substrate is subjected to the water washing treatment, first, in the replacement water washing chamber (circulating water washing treatment portion), the washing water is supplied to the main surface of the substrate immediately after the completion of the chemical liquid treatment, and the liquid medicine on the substrate is washed with water. After the replacement, the substrate is supplied with pure water to the main surface of the substrate in a direct water washing chamber (new water washing treatment unit), and then the substrate is dried. In this case, pure water (new water) is used for the substrate cleaning in the direct water washing chamber, and the water used in the direct water washing chamber is recovered in the circulating water tank when the substrate is washed in the replacement washing chamber. Tank) 'Use it as a washing water (circulating water), thereby saving the amount of pure water used (for example, refer to Japanese Patent Laid-Open Publication No. H 162918). 098130893 4 201026405 In addition, the following apparatus is used: the water washing treatment unit that washes the substrate after the chemical solution treatment is replaced by a water washing chamber (first water washing unit), a second water washing chamber (second water washing unit), and In the water-washing chamber (the third water-washing unit), the water used in the second water-washing chamber is recovered in the first cycle, and the water tank is used as the washing water. The treated main surface of the substrate is supplied with washing water, and the chemical liquid on the substrate is replaced with washing water, and the water used in the direct washing chamber is recovered in the second circulating water tank in the second washing chamber. It is used as a washing water, and the substrate on which the main liquid is replaced by the washing water is subjected to a water washing treatment, and finally, in the direct washing chamber, pure water is supplied to the main surface of the substrate to end the washing of the substrate (for example, refer to Japanese Patent Laid-Open) Bulletin No. 10-284379).圃¢) shows a schematic configuration of a conventional substrate processing apparatus, and shows a part of the water treatment processing unit in the substrate processing apparatus. In the water-washing treatment unit of the substrate processing apparatus, the replacement water washing unit (the second water washing unit), the second water washing unit 3, and the direct water washing unit 4 are sequentially connected to the rear side of the chemical processing unit. A part of the water washing unit 4 is provided with a drying treatment unit (not shown). The replacement water washing unit 5 includes a replacement washing chamber (the j-th washing chamber (10), and the adjacent chemical processing unit 1 The chemical solution processing chamber 38 is provided with a base-population-like substrate transfer port 44, a plurality of transfer rollers (10) ler (not shown), and a substrate w after the chemical liquid treatment carried in the replacement water washing chamber 4G is used. The horizontal plane is supported in a direction inclined with respect to the substrate transport direction, and is reciprocated in the horizontal direction in the 098130893 5 201026405 water washing chamber 40; the inlet slit nozzle (sm nozzle) 46 is disposed in the replacement In the vicinity of the substrate carrying inlet 42 in the washing chamber 40, the upper surface of the substrate W loaded into the replacement washing chamber 40 covers the entire width of the substrate boundary in the form of a curtain to discharge the washing water; and the upper spray nozzle (spray nozzle) ) 48 and lower spray spray The nozzle 50 discharges the washing water to the upper and lower sides of the substrate W that reciprocates in the horizontal direction in the replacement washing chamber 4A. The upper spray nozzle 48 and the lower spray nozzle 50 are parallel to each other in the substrate conveying direction. There are a plurality of 'each spray nozzles 48, 50 arranged in a row in the direction in which the substrate is transported, and a plurality of discharge ports are provided. At the bottom of the replacement washing chamber 4, a liquid discharge path 52' is provided for discharging and discharging. The second water washing unit 3 is provided with a second water washing chamber 54 and is provided with a substrate carrying inlet 56 and a substrate carrying port 58 adjacent to the replacement washing chamber 40; a plurality of conveying rollers ( In the second washing chamber, the substrate W that has been carried into the second washing chamber 54 from the replacement washing chamber 40 is tilted in a direction perpendicular to the substrate conveying direction in the direction perpendicular to the substrate conveying direction. 54 is conveyed in the horizontal direction; and the upper spray nozzle 60 and the lower spray nozzle 62 and the like respectively discharge the washing water onto the upper and lower sides of the substrate w conveyed in the horizontal direction in the second washing chamber 54. Nozzle 60 and lower spray nozzle 62 along A plurality of discharge ports are provided in parallel with each other in the direction in which the plates are conveyed, and a plurality of discharge ports are provided in a row in each of the spray nozzles 6A and 62. The circulation portion 64 is provided at the bottom of the second water washing chamber 54. In the second water washing chamber 54 in the bottom of the second washing chamber 54 098130893 6 201026405 ^ the material washing water, # 赖水路μ connected to the circulating water tank in addition, in the Ju ring sink 66, connected to the flow path connected to pure water ( New 7) pure water supply route 68 of the supply source, further, connected with a washing water supply path provided at the bottom of the direct washing chamber 7 () of the direct • water washing section 4 Liancai clean water for listening to the % and the washing water supply road 8〇, the washing water supply road% is provided with a pumping pump (fluump) 74, respectively, the flow path is connected to the inlet slit in the replacement washing chamber 4〇 The nozzle private and the upper spray nozzle 48 and the lower spray nozzle 5 are disposed, and the wash water supply path 8 is disposed between the upper mist and the lower spray nozzle 62 of the second water washing chamber (10). Further, the second washing chamber 54 bottom water passage 82, the drain passage 82 discharges the substrate W, and the used washing water that flows down from the I8 to the bottom of the second washing chamber 54 is used, and is incorporated in the H+ In the state where the substrate w is not washed to the inside of the substrate 4, the substrate W is washed and used, and the washing water directly at the bottom of the second washing chamber 54 is sent without being used. Return to the circulating water tank 66 ° The configuration of the direct water washing unit 4 is only partially shown, but it is the same as the second water washing unit. However, 'in the upper part of the direct washing chamber 7G (4) the mouthpiece 86 and the lower 3 spray material 88, for the water (new water), (four)-like pure forest recycling and 'washing in the direct water washing section 4 The purified water is sent to the circulating water tank % via the washing water supply path 72. </ RTI> </ RTI> 098130893 201026405 (Problems to be Solved by the Invention) In the above-described conventional substrate processing apparatus, the substrate W that has been chemically treated in the chemical processing chamber 38 is reciprocated in the horizontal direction in the replacement washing chamber 40. The moving water is discharged from the upper spray nozzle 48 and the lower spray nozzle 50 to the upper/lower sides of the substrate w without interruption, and the chemical liquid on the substrate w is replaced with washing water. Therefore, in the replacement washing chamber 40, it is necessary to wash a large amount of X, and the amount of pure water used in the water washing treatment unit, that is, the pure water supplied to the circulating water tank 66 of the second water washing unit 3, and the upper portion of the direct water washing unit 4 are supplied. The amount of pure water of the spray nozzle 86 and the lower spray nozzle 88 also increases. Further, all the washing water used in the replacement washing chamber 40 is discharged, so that the water in the replacement washing chamber 4G will cause the water to be cleaned, and as a result, the amount of liquid discharging treatment will also increase. Further, since the water washing treatment is performed while the substrate W is reciprocated in the horizontal direction in the replacement washing chamber 4, there is a problem that the processing time becomes long. The present invention has been made in view of the above circumstances, and an object thereof is to provide a substrate processing apparatus which can reduce the amount of pure water used while reducing the amount of liquid discharged while washing the substrate after the chemical treatment, and can shorten the washing time. (Means for Solving the Problem) The substrate processing apparatus according to the first aspect of the invention includes a water washing chamber that performs a water washing process on the substrate after the chemical liquid treatment, and a substrate transporting means disposed in the water washing chamber to transport the base In the segment, the main surface of the substrate conveyed by the reduction plate transport means is supplied with clean water, which is constituted by a nail. 098130893 201026405 That is, the water washing chamber is in a closed state in which the substrate transporting length is longer than the substrate in the substrate transporting direction, and the phase of the substrate is σ and (4) the exit of the substrate. The substrate is continuously conveyed* and carried into the substrate in the water washing chamber, and is carried out from the water washing chamber. After washing, the substrate is not made pure (four) or stopped. * The above-mentioned washing water supply means is configured to include an inlet nozzle disposed in the vicinity of the inlet of the water washing chamber, and intersecting the substrate conveying direction, and the main surface of the substrate is covered in the width direction of the substrate. Water; a high-pressure nozzle is disposed on the front side of the substrate in the transfer direction of the inlet nozzle, and forms a crossover direction in the substrate transfer direction, and discharges the washing water to the main surface of the substrate to block the liquid medicine on the substrate toward the substrate transport direction. a flow on the side, the chemical liquid on the substrate is rapidly replaced with the washing water; the switching means switches the washing water discharge and the stop discharging of the inlet nozzle and the high pressure nozzle, and the control means controls the switching means to carry the above-mentioned switching means Before the water washing chamber, the washing water is discharged from the inlet nozzle and the high pressure nozzle, and after the substrate is carried out from the water washing chamber, the washing water is discharged from the inlet nozzle and the high pressure nozzle. Further, the gas nozzle is disposed on the outlet side of the water washing chamber, and forms a flow in the direction in which the substrate is conveyed, and ejects the gas in a direction opposite to the normal direction or the substrate transporting direction toward the main surface of the substrate. The chemical solution is prevented from adhering to the substrate and carried out of the water washing chamber; and the drainage means 'discharges the washing water flowing down the bottom of the water washing chamber. According to a second aspect of the invention, in the substrate processing apparatus of the first aspect of the invention, the inlet nozzle-type slit nozzle has a slit-like discharge port along a longitudinal direction, and 098130893 n 201026405 is formed from the slit-shaped discharge port. The main surface of the substrate ejects the washing water in a curtain shape in a direction inclined to the front side in the substrate conveyance direction. According to a third aspect of the invention, in the substrate processing apparatus of the first or second aspect, the south-pressure nozzle series high-density fan-shaped spray nozzle has a plurality of discharge ports which are disposed close to each other in a direction opposite to a substrate transfer direction. The washing water is discharged from each of the spouts in a fan-shaped high pressure. According to a fourth aspect of the invention, in the substrate processing apparatus of the second aspect of the invention, the pressure-injecting nozzle-type two-fluid spray nozzle has a plurality of discharge ports that are adjacent to each other in a direction intersecting the substrate transfer direction, and each of the plurality of discharge ports The discharge port is atomized by the gas pressure to discharge the washing water. According to a fifth aspect of the invention, in the substrate processing apparatus of the first or second aspect of the invention, the south pressure nozzle is provided with a hood that prevents the mist of the washing water discharged from the discharge port from scattering. According to a sixth aspect of the invention, in the substrate processing apparatus of the fifth aspect of the invention, the mist suction device that discharges and discharges the water mist through the cover body is provided. According to a seventh aspect of the invention, in the substrate processing apparatus according to the first or second aspect of the invention, the washing water # knife collected in the second washing chamber provided on the rear side of the washing chamber is supplied to the inlet nozzle and The above high pressure nozzle. (Effect of the invention) In the substrate processing apparatus of the first aspect of the invention, the substrate which has been subjected to the liquid treatment in the water-washing chamber is discharged from the population nozzle which is disposed near the human σ, and the entire surface of the substrate is discharged in the width direction of the substrate. Dilute the substrate with wash water and rinse with 098130893 201026405. After the mixture of the chemical solution and the washing water remaining on the substrate after passing through the position where the inlet nozzle is disposed, the flow of the mixture of the chemical liquid and the washing water flowing forward is high-pressure discharge from the high-pressure nozzle provided on the front side of the inlet nozzle toward the main surface of the substrate. The water is blocked. As a result, in a state where the diluted chemical solution flows forward and is blocked, the substrate moves forward, so that the chemical liquid on the substrate is rapidly replaced by the washing water during the period in which the substrate is placed through the high-pressure nozzle. Further, before the substrate is carried out from the water washing chamber, the flow of the liquid toward the front on the substrate is blocked by the pressure of the gas which is ejected from the gas nozzle toward the main surface of the substrate. As a result, it is possible to effectively prevent the chemical solution from adhering to the substrate and being carried out of the water outside. The series of water washing processes are carried out in a short period of time in which the length of the substrate in the substrate transport direction is smaller than the size of the substrate in the substrate transport direction, and is continuously carried in the water washing chamber in one direction and carried out from the water washing chamber. Further, since the chemical liquid on the substrate is rapidly replaced by the washing water which is discharged from the high pressure nozzle toward the main surface of the substrate, the washing water can be efficiently washed with a small amount of washing water. Further, the washing water flowing down the bottom of the water-washing chamber is discharged by the drainage means, and the switching means is controlled by the control means, and before the substrate is carried into the water-washing chamber, the washing water is discharged from the inlet nozzle and the high-pressure nozzle, and is carried out from the washing chamber. After the substrate is stopped, the washing water is discharged from the inlet nozzle and the high nozzle, so that the amount of discharge of the washing water and the amount of liquid discharged can be suppressed. When the substrate processing apparatus of the first invention is used, the pure water money 4 of the service base (4) of the washing liquid can be greatly saved, the liquid discharge amount can be reduced, and the washing time can be greatly shortened. 098130893 11 201026405 In the substrate processing apparatus according to the second aspect of the invention, the substrate which has been subjected to the chemical solution treatment in the water-washing chamber is discharged from the slit-shaped discharge port of the slit nozzle in the width direction of the substrate as a whole in the form of a curtain. Thereby, the liquid medicine on the substrate can be diluted and rinsed with the washing water efficiently. In the substrate processing apparatus according to the third aspect of the invention, the washing water is discharged from the plurality of discharge ports of the high-density fan-shaped spray nozzles in series to the main surface of the substrate, thereby reliably blocking the mixed liquid of the liquid chemical and the washing water remaining on the substrate. Flowing in front. In the substrate processing apparatus according to the fourth aspect of the invention, the washing water is atomized by a gas pressure such as air from a plurality of spout outlets of the two-fluid spray nozzle, and is discharged toward the main surface of the substrate together with the gas, thereby reliably blocking the substrate. The mixture of the remaining liquid and the washing water flows forward. In the substrate processing apparatus according to the fifth aspect of the invention, the washing water is discharged from the discharge port of the high-pressure nozzle at a high pressure, and the washing water mist is generated, but the mist can be prevented from scattering through the cover. In the substrate processing apparatus according to the sixth aspect of the invention, the washing mist is sucked and discharged by the mist suction device, and the washing water mist containing the chemical liquid can be prevented from adhering to the substrate again. In the substrate processing apparatus according to the seventh aspect of the invention, the utilization efficiency of pure water can be improved. [Embodiment] Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. Fig. 1 is a view showing an example of an embodiment of the present invention, and schematically shows a part of a water washing treatment unit in a substrate processing apparatus. The water-washing treatment unit of the substrate processing apparatus is configured by a replacement water washing unit that is sequentially connected to the rear side of the chemical liquid processing unit 1 (only the portion shown in the figure) (the first water washing 098130893 12 201026405 = two 24 Γ part 3 and direct The washing unit 4 (only a part of the drawing) is provided with a drying treatment unit (not shown) on the side of the straight washing/backing section. The substrate processing unit 2 directly washes the liquid chemical processing unit other than the water washing unit 2 The configuration of the middle and the Γ/4 is the same as that of the above description of Fig. 6. The constituent elements and members of Fig. 1 Π 6 (4) are also omitted from the description of the component symbol (4). The water treatment unit of the substrate processing apparatus The replacement water washing unit 2 is provided with a water washing chamber (first water washing chamber) 1G, and is provided with a chemical liquid processing chamber 38 adjacent to the chemical liquid processing unit, and has a substrate carrying population 12 and a substrate carrying port 14; and a plurality of conveying rollers ( (not shown), the substrate W that has been loaded into the replacement washing chamber 1 and processed by the chemical solution is inclined in a direction orthogonal to the substrate conveying direction with respect to the horizontal plane (the substrate W is lower toward the front side) And supported, and in the replacement washing chamber 10 in one direction The inlet nozzle 16 is disposed in the vicinity of the substrate carrying inlet 12 in the replacement washing chamber 10, and the high pressure nozzle® 18' is disposed on the front side of the inlet nozzle 16 in the substrate conveying direction; The lower spray nozzle 20 is disposed below the substrate transfer path, and the pair of air nozzles 22 and 22 are vertically disposed on the outlet side of the replacement washing chamber 10 via the substrate transfer path. The replacement washing chamber 10 is in a closed form. The substrate carrying inlet 12 is provided with an opening and closing shutter (not shown). The entire length of the replacement washing chamber 10 (the length in the substrate conveying direction) is shorter than the length dimension of the substrate W (the dimension in the direction in which the substrate is conveyed). For example, When the length of the substrate W to be processed is 2.4 m to 2 mm 5 m, the total length of the replacement washing chamber 1 is set to 098130893 13 201026405 lm to 1.5 m. Further, the substrate W does not reciprocate or temporarily stop in the replacement washing chamber 10, for example, In the replacement washing chamber 10 of the full length lm, the substrate W is transported at a high speed by a transfer roller, and the substrate W having a length of 2.5 m in the transport direction is passed for 15 seconds to 20 seconds. Further, the substrate w is in the substrate transport direction. The inside of the replacement washing chamber 10 is successively carried into the replacement washing chamber 10. The liquid discharging passage 24 is provided at the bottom of the replacement washing chamber 10 for discharging the used washing water flowing down the bottom of the replacement washing chamber 10. The washing water after use in the washing chamber is completely discharged through the draining passage 24. Further, an exhaust pipe 90 is provided at the top of the replacement washing chamber 10 for discharging the washing water mist from the replacement washing chamber 10. The inlet nozzle 16 is constituted by a slit nozzle having a slit-like discharge port along the longitudinal direction. The inlet nozzle 16 is disposed parallel to the upper surface of the substrate w and orthogonal to the substrate conveyance direction, and is set to face from the vertical direction. Tilt obliquely forward. Further, the slit-shaped discharge port of the inlet nozzle 16 is placed on the upper surface of the substrate W in the replacement washing chamber 1 to cover the entire width direction of the substrate w, and is in the shape of a curtain and forward in the direction toward the substrate in the downward direction. Wash the water in the direction of the side slope. Further, it is also possible to replace the slit nozzles with a nozzle which is provided in a row in the longitudinal direction by using a plurality of minute discharge ports, and to discharge the entire washing water from the plurality of small discharge ports of the nozzles in the width direction of the substrate W. As the high-pressure nozzle 18, as shown in the front view of the mode as viewed from the front side in the substrate transport direction, the series high-density fan-shaped spray nozzle 18a is used as the spray tube 098130893 14 disposed in the direction in which the substrate conveyance direction intersects. 201026405 pipe) 92a 'A plurality of nozzle portions 94a that are adjacent to each other are provided along the longitudinal direction, and the washing water is discharged from the discharge ports of the respective nozzle portions 94a in a fan-like high pressure. The spray pipe 92a of the series high-density fan-shaped spray nozzle 18a is connected to the washing water supply path 30 as will be described later. The washing water supply path 30 is connected to the circulating water tank 66 and is provided with a liquid supply pump 32. . The series high-density fan-shaped spray nozzle 18a is disposed at a height position, for example, a distance from the discharge port of the nozzle portion 94a to the upper surface of the substrate W of 1 () mm to 3 mm, and the plurality of squirt portions 94a are, for example, 20mm~200mm pitch setting. The high-pressure nozzles 18 are arranged parallel to the upper surface of the substrate W and perpendicular to the substrate transporting direction or obliquely to the orthogonal direction of the substrate transporting direction (disposed obliquely with respect to the inlet nozzle 16 in the near-side opening direction). The high-pressure (e.g., 0.2 MPa pressure) washing water is discharged from the discharge port of the high-pressure nozzle 8 to the upper surface of the transfer substrate W so as to cover the entire width direction of the substrate w. Alternatively, the series high-density fan-shaped spray nozzle 18a can be replaced by a high-pressure nozzle having the same function. For example, as shown in the front view of the substrate in the direction in which the substrate is conveyed, as shown in FIG. 3, a two-fluid spray nozzle 18b is used, which is disposed in a cross direction in the direction in which the substrate is conveyed. 92b, a plurality of two-fluid nozzle portions 94b adjacent to each other are provided along the longitudinal direction thereof, and the washing water is atomized from the discharge port of each of the two-fluid nozzle portions 94b by gas pressure such as air to be discharged. The two fluid spray headers 92b of the two-fluid spray nozzle 18b are connected to the wash water supply path 30 while being connected to the air supply 098130893 15 201026405 supply path 96, for example, the flow path is connected to the air supply source. The two-fluid spray nozzle 18b is disposed at a height position, for example, a distance from the discharge port of the two-fluid nozzle portion 94b to the upper surface of the substrate W of 10 mm to 100 mm, and the plurality of two-fluid nozzle portions 94b is, for example, 20 mm to 100 mm. Spacing settings. Further, the high pressure nozzle 18 may be provided with a cover 26 for preventing the washing water mist discharged from the discharge port from scattering. Further, a mist suction device may be provided in the cover body 26, and the mist suction device is connected to the exhaust pipe 28, and is evacuated by vacuuming the washing water mist through the exhaust pipe 28 and the cover body 26.下部 The lower spray nozzles 20 are provided in parallel with each other in the substrate transport direction and in parallel with each other. A plurality of discharge ports are provided in the lower spray nozzle 20 toward the substrate transport direction. The lower spray nozzle 20 discharges the washing water toward the lower surface of the conveyed substrate W, and washes the lower surface side of the substrate W. The lower spray nozzle 2〇 and the inlet nozzle 16 and the high pressure nozzle 18' are respectively connected to the washing water supply path 3〇, and the liquid supply pump 30 is disposed in the washing water supply path 30, and the washing water is provided. The supply path 30 is connected to the bottom portion of the circulating water tank provided in the second water washing treatment unit 3. Further, the flow path is configured such that the washing water is supplied from the inside of the circulating water tank 66 to the inlet nozzle 16, the high pressure nozzle 18, and the lower spray nozzle 20 through the washing water supply path 30'. The washing water supply path 30 branches on the discharge side of the liquid feeding fruit 32, and the branch path is connected to the circulating water tank 66 to form a purified water return path 98. Further, in the branch position of the washing water supply path 3G, the downstream side is inserted into the opening and closing control room 1〇0' while the cleaning water return path 98 is inserted into the opening and closing control valve 1〇2, and the 098130893 16 201026405 is opened. The flow paths are switched by opening and closing the control valves 100 and 102. Further, a substrate position sensor 104 for detecting the position of the tip end of the substrate w is disposed in the vicinity of the substrate carrying inlet 12 of the replacement washing chamber 10 (near the outlet in the chemical processing chamber 38 in the illustrated example). In the front side of the substrate transfer port 14 of the replacement washing chamber 1 (near the substrate transfer inlet 56 in the second washing chamber 54 in the illustrated example), a substrate position sensor 1〇6 for detecting the rear end position of the substrate w is disposed. The detection signals outputted from the respective substrate position sensors 104 and 106 are input to the control circuit 108'. The control circuit 108 outputs a control signal based on the detection signal, thereby configuring the opening and closing operations of the respective opening and closing control valves 100 and 102, respectively. Further, when the substrate W is not loaded into the replacement washing chamber 1 by the control circuit 108, the washing water is not discharged from the inlet nozzle 16, the high pressure nozzle 18, and the lower nozzle mist nozzle 20, and the replacement of the replacement water is performed on the substrate W. The washing water is discharged from each of the nozzles 16, 18, and 20 before the inside of the chamber, and the washing water is continuously discharged from each of the nozzles 16, 18 and before the substrate W is carried out from the replacement water chamber 10. After the substrate 琛 is carried out from the replacement washing chamber 10, the opening and closing operations of the opening and closing control valves 100 and 102 are controlled, and the washing water is discharged from each of the nozzles 16 and discharged. Further, the configuration in which the washing water discharge and the stop discharge are switched from the inlet nozzle 16, the high pressure nozzle I8, and the lower spray nozzle 20 is not limited to the above description or illustration. For example, the washing water return path & 98 is provided so that the washing water supply path 3 branches are provided, and the flow path configuration of the opening and closing control valves _ and (10) of the switching flow path is simultaneously set to be turned on/off (〇 n/〇ff) Controls the drive of the liquid supply pump 32 with 098130893 17 201026405 stopped. Further, in the above description and the illustrated example, the substrate position sensor 104 for detecting the position of the tip end of the substrate w is disposed in the vicinity of the outlet in the chemical processing chamber 38, but the substrate position sensor 104 may be disposed in the medicine. The vicinity of the inlet in the liquid processing chamber 38 is 'programmed after a certain period of time (the front end of the substrate W passes through the chemical processing chamber; 38 exit) when the substrate position sensor 104 detects the position of the front end of the substrate w. The washing water is discharged from each of the nozzles π, 18, and 20. The upper and lower pair of air nozzles 22 and 22 are parallel to the inclined posture @upper/lower surface of the substrate W, and are arranged obliquely with respect to the orthogonal direction of the substrate transport direction. The air nozzle 22 is connected to the air supply pipe 34, and air is blown from the air nozzle 22 toward the upper/lower sides of the substrate| (the reverse air (C) Unter (four) (four) substrate transport direction is ejected obliquely in the reverse direction or in the downward direction. The supply pipe 34 is connected to the air supply source. Alternatively, the replacement line may be replaced by another gas (for example, nitrogen gas) on each surface of the substrate w. When the substrate w that has been treated with the liquid in the chemical processing chamber 38 is carried into the replacement washing chamber (7), the washing water is discharged from the slit-like discharge of the inlet nozzle 16 toward the base (four) toward the entire curtain. 4 is a side view of the mode, in which the chemical liquid is discharged from the inlet nozzle 16 in a curtain shape, and the water A is washed away from the substrate W to dilute the substrate to the upper P knife liquid B. Then, from the high pressure nozzle The discharge port of 18 is pressed against the substrate W, and the water is washed by the nozzle nozzle. As shown in Fig. 4, '098130893 18 201026405, the water wall formed by the washing water A discharged from the high pressure nozzle 丨8 passes through the inlet nozzle. 16 after the placement of the position 'and remains on the substrate W The mixed liquid C of the liquid and the washing water is blocked in the forward direction. When the mixed liquid C of the chemical liquid and the washing water is blocked from flowing forward, the substrate W is moved forward, so that the substrate W passes through the high pressure. During the arrangement of the nozzles 18, the chemical liquid on the substrate w is rapidly replaced by the washing water. Further, during this period, the washing water is continuously discharged from the discharge port of the lower spray nozzle 20 on the lower surface of the substrate W, and _ The substrate W is washed under the substrate W. Then, before the substrate W is carried out from the replacement washing chamber 1 , air is blown from the upper and lower pair of air nozzles 22 and 22 to the upper and lower surfaces of the substrate W, respectively. It is shown that the pressure of the air 〇 ejected from the pair of air nozzles 22 and 22 toward the upper and lower sides of the substrate W blocks the flow of the liquid E adhering to the front and the bottom of the substrate W, thereby effectively preventing the liquid from adhering to the liquid. The substrate W" is taken out of the replacement washing chamber. The above-described series of water washing treatments are carried in the substrate W into the replacement washing chamber 1, and the crucible is continuously conveyed in one direction in the replacement washing chamber 10, and is replaced by the replacement washing chamber 1 Within a short period of time (for example, 15 In addition, the washing liquid which is discharged from the high pressure nozzle 18 to the upper surface of the substrate W is rapidly replaced with the washing water by the washing water, so that the washing water can be used in a small amount. Efficiently ride the nuclear treatment. Further, if you do not move into the replacement washing chamber 1G (4), stop the washing water to discharge, which can reduce the amount of washing water. Moreover, it can effectively prevent the residual liquid. It is taken out to the outside of the replacement washing chamber 10 on the substrate w. Therefore, the washing water can be reduced in the second water 098130893 19 201026405 in the washing chamber 54 for contamination after washing the substrate W. As a result, the second washing chamber 54 can be improved. The recycling rate of the used washing water can further save the use of pure water. Further, in the above-described embodiment, the substrate W is supported in an inclined posture and transported in the horizontal direction in the replacement washing chamber 10. However, the substrate may be supported in a horizontal posture. Further, the present invention can be widely applied to the substrate water washing treatment after the various chemical liquid treatments, in addition to the resist stripping treatment and the residual processing. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing a schematic configuration of a part of a water washing treatment unit in a substrate processing apparatus according to an embodiment of the present invention. Fig. 2 is a view showing an example of a high-pressure nozzle which is a constituent of a replacement washing unit of the substrate processing apparatus shown in Fig. 1, and is a front view of a mode in which a series high-density fan-shaped spray nozzle is viewed from the front side in the substrate conveyance direction. Fig. 3 is a high-fourth nozzle-shaped view showing the components of the replacement washing unit as the substrate processing apparatus shown in the same paragraph, and is a front view of the mode in which the two-fluid spray nozzle is seen from the front side of the substrate conveyance direction. Treatment in the replacement water washing unit Fig. 4 is a schematic side view showing the water washing treatment unit shown in Fig. 1. In the middle, Fig. 5 is a side view showing the mode of the replacement washing process of the water washing treatment unit shown in Table _. ^ shows a configuration example of a conventional substrate processing apparatus, and is a schematic configuration diagram showing a part of the water washing processing unit. 098130893 20 201026405 [Description of main component symbols] Chemical solution processing unit 2 3 4 5 10 φ 12 ' 42 > 56 14, 44, 58 16 18 18a 18b 20 〇 22 24 26 28 30 , 72 , 76 ' 80 32 , 74 78 34 38 Replacement Washing Unit (1st Washing Unit) 2nd Washing Unit Direct Washing Unit Replacement Washing Unit (1st Washing Unit) Replacement Washing Room (1st Washing Room) Substrate Carrying Inlet Substrate Carrying Outlet Nozzle High Pressure Nozzle Series High Density fan spray nozzle two fluid spray nozzle lower spray nozzle air nozzle drain road cover body exhaust pipe wash water supply road feed pump air supply tube liquid processing chamber 098130893 21 201026405 40 replacement washing room (first wash 46) inlet slit nozzle 48 upper spray nozzle 50 lower spray nozzle 52 drain circuit 54 second washing chamber 60, 86 upper spray nozzle 62 ' 88 lower spray nozzle 64 circulating drain 66 circulating water tank 68 pure water Supply path 70 Direct washing chamber 82 Drainage path 84 Three-way switching valve 90 Exhaust pipe 92a Spray pipe 92b Two-fluid spray header 94a Nozzle portion 94b Two-fluid nozzle portion 96 Air supply path 98 Wash water return path 100 ' 102 Open and close control valve 098130893 22 201026405 104,106 108
AA
BB
CC
DD
E ❿ w 基板位置感測器 控制電路 洗淨水 藥液 混合液 空氣 液體 基板E ❿ w Substrate position sensor Control circuit Washing water Liquid mixture Liquid liquid Liquid substrate
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