TWI344392B - - Google Patents

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TWI344392B
TWI344392B TW097121584A TW97121584A TWI344392B TW I344392 B TWI344392 B TW I344392B TW 097121584 A TW097121584 A TW 097121584A TW 97121584 A TW97121584 A TW 97121584A TW I344392 B TWI344392 B TW I344392B
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Taiwan
Prior art keywords
chamber
substrate
opening
processing
processing chamber
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TW097121584A
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Chinese (zh)
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TW200916199A (en
Inventor
Kazuo Jodai
Hisaaki Matsui
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Dainippon Screen Mfg
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Priority claimed from JP2008046223A external-priority patent/JP2009202088A/en
Application filed by Dainippon Screen Mfg filed Critical Dainippon Screen Mfg
Publication of TW200916199A publication Critical patent/TW200916199A/en
Application granted granted Critical
Publication of TWI344392B publication Critical patent/TWI344392B/zh

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67075Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Weting (AREA)

Description

1344392 九、發明說明: 【發明所屬之技術領域】 本發明係關於一種對LCD(Liquid-Crystal Display,液晶 顯示器)、PDP(Plasma Display Panel,電漿顯示器)等 FPD (Flat Panel Display,平板顯示器)用玻璃基板、光罩用玻 璃基板、半導體基板等基板供給各種處理液並實施處理之 基板處理裝置。 【先前技術】 一直以來’已知一種裝置’其具有複數個處理室,藉由 一面搬送LCD、PDP用玻璃基板等基板一面在各處理室内 對基板供給處理液’從而對基板實施預定之過程處理。例 如’於專利文獻1中記載有一裝置,其係鄰接地設置有藉 由對基板供給剝離液而剝離光阻覆膜之剝離處理室、及對 剝離處理後之基板進行清洗之清洗處理室者。 於該種裝置中’考慮到伴隨處理而充滿於處理室内之霧 狀之處理液會通過基板搬送用的開口部而侵入到鄰接之處 理至(稱作鄰接處理室),從而對該鄰接處理室之基板之處 理帶來各種影響。例如,於上述專利文獻1之裝置中,回 收並再使用(循環使用)於剝離處理室中已使用之剝離液, 但考慮到此時,若清洗液之霧液從清洗處理室侵入到剝離 處理室,則剝離液之液質會劣化。 因此,一般而言,例如專利文獻2所示,於處理室之間 叹置閘門,並僅在基板搬送時才開啟開口部,藉此防止霧 液向鄰接處理室侵入。 132063.doc 1344392 [專利文獻1]日本專利特開2004-146414號公報 [專利文獻2]曰本專利特開2000-58501號公報 【發明内容】 [發明所欲解決之問題] 然而,即使對於在處理室之間設置有閘門之裝置,由於 在基板搬送期間開口部隨意地開啟著,故霧液依然容易穿 過開口部而侵入到鄰接處理室,從而在防止霧液向鄰接處 理室侵入之方面尚存有改善之餘地。 而且’考慮到在開口部閉止時附著於閘門上之霧液會在 閘門作動時飛散到鄰接處理室内,特別在專利文獻2之構 成中’由於閘門係繞水平軸轉動而倒入至處理室内側之可 倒式構造,故所附著之霧液等在閘門作動時(特別是開放 時)容易飛散,從而亦需要對此進行改善。 另外’於複數個處理室鄰接之裝置中,霧液從其中任一 處理室向另一處理室之侵入成為問題,而相反情況大多在 某程度上容許。例如,於專利文獻1之裝置中,在防止剝 離液劣化時,必須阻止霧液從清洗處理室向剝離處理室侵 入,而相反,亦即剝離液(霧液)向清洗室之侵入則並不成 問題。從而,在謀求防止霧液侵入之對策時,較理想的是 在考慮上述情況後再討論對策。 本發明係鑒於上述問題研製而成者,其目的在於提供一 種更有效地防止霧狀處理液向鄰接之處理室侵入之基板處 理裝置。 [解決問題之技術手段] 132063.doc 為為2決上述問題,本發明之基板處理裝置之基本構成 >、有對基板供給處理液以對基板實施特定之濕式處理 之濕式處理。, 且!由形成於該濕式處理室之間隔壁上的 土板搬达用的開口部而相對於上述濕式處理室進行基板之 ,入搬出,該基板處理裝置具備:閘門機構,其開啟及關 閉上述開口部;以及氣流形成機構,《包括配置於上述濕 式處理室之室外之喷嘴構件,在至少上述開口部開口時, ,氣體從上述噴嘴構件噴出,由此形成朝向上述開口部之 氣流。 根據該基板處理裝置,在利用開門機構而使開口部開放 之期間’亦即’主要在基板通過開口部時,從喷嘴構件喷 出氣體,藉此於濕式處理室外形成朝向上述開口部之氣 流,並於其氣壓之作用了,防止已穿過上述開口部之處理 液(霧液)從濕式處理室内向室外流出。因此,與僅利用間 門機構來開啟及關閉開口部之先前裝置相&,能夠更 地防止霧液流出。 再者,於該基板處理裝置中,較佳的構成為,作為上述 閉門機構,包括第㈣門機構及第2間門機構,上述_ 門機構具備從上述濕式處理室之室内側開啟及關閉上述開 口部之閉門本體’上述第2閉門機構具備從上述濕式處理 室之室外側開啟及關閉上述開口部之閘門本體,上 形成機構從上述喷嘴構件對通過上述開口部之基板供^ 體’藉此而於該基板之表面上形成從濕式處理室之室夕^ 向室内側流動之氣流。 51 132063.doc 1344392 根據上述構成,由於在濕式處理室内亦配備有閘門機 (第1閘門機構)’故霧液難以附著於濕式處理室外之閘門 構(第2閘Η機構)之閘門本體上。因此,能夠有效地二止附 著於第2閘門機構上之霧液或者其乾燥物在閘門機構作動 時飛散到濕式處理室之室外側。而且,在基板通過開口部 時,藉由氣流形成機構而於基板表面上形成有朝向濕式處 理室之室内側流動之氣流,從而更可靠地防止霧液 處理室流出。 '·一 作為具體之構成,例如具有鄰接處理室,該鄰接處理室 經由上述開口部而連通於上述濕式處理室,且對基板實施 上述濕式處理的前處理或者後處理,於此情況下,於該鄰 接處理室中,配備有上述第2閘門機構及上述噴嘴構件。 根據上述構成,能夠有效地防止閘門作動時霧液飛散到 鄰接處理室内以及在基板搬送期間霧液穿過上述開口部而 侵入到鄰接處理室内。 再者,於如上所述之基板處理裝置中,進一步具有閉門 控制機構’其在藉由上述閘門本體而閉止上述開口部之閉 止狀態及藉由使上述閘門本體退避到特定之退避位置而開 放上述開口部之開放狀態之間,切換控制上述各閘門機構 之驅動狀態’在基板通過上述開口部時,上述閘門控制機 構在即將將上述第1閘門機構從閉止狀態切換為開放狀態 之前,將上述第2閘門機構從閉止狀態切換為開放狀態。 根據上述構成,在基板搬送時,相較於濕式處理室之室 内側之第1閘門機構,室外側之第2閘門機構總是先切換為 132063.doc 1344392 開放狀態,從而有效地防止霧液附著於第2閘門機 門本體上。 於此情形時,較佳的構成為,進一步具有控制上述氣流 形成機構之氣流形成控制機構,該氣流形成控制機構係與 第1閘門機構之從閉止狀態向開放狀態切換之動作同步的 開始供給氣體。 根據上述構成,由於與開放開口部同時開始供給氣體, 故更有效地防止霧液從濕式處理室内流出。1344392 IX. Description of the Invention: [Technical Field] The present invention relates to an FPD (Flat Panel Display) such as an LCD (Liquid-Crystal Display), a PDP (Plasma Display Panel), or the like. A substrate processing apparatus that supplies various processing liquids and performs processing using a substrate such as a glass substrate, a glass substrate for a photomask, or a semiconductor substrate. [Prior Art] Conventionally, a device has been known which has a plurality of processing chambers, and performs a predetermined process on the substrate by supplying a processing liquid to the substrate in each processing chamber while transporting a substrate such as a glass substrate for LCD or PDP. . For example, Patent Document 1 discloses a device in which a peeling treatment chamber for peeling a photoresist film by supplying a peeling liquid to a substrate and a cleaning processing chamber for cleaning the substrate after the peeling treatment are provided adjacently. In such a device, it is considered that the processing liquid which is filled with the mist in the processing chamber accompanying the processing enters the adjacent processing by the opening for the substrate transfer (referred to as the adjacent processing chamber), and the adjacent processing chamber is The processing of the substrate brings various effects. For example, in the apparatus of the above Patent Document 1, the peeling liquid which has been used in the peeling treatment chamber is recovered and reused (recycling), but in consideration of this, if the mist of the cleaning liquid invades from the cleaning processing chamber to the peeling treatment In the chamber, the liquid quality of the stripping liquid is deteriorated. Therefore, in general, for example, as shown in Patent Document 2, the shutter is slid between the processing chambers, and the opening portion is opened only when the substrate is conveyed, thereby preventing the mist from entering the adjacent processing chamber. [Patent Document 1] Japanese Laid-Open Patent Publication No. 2004-146414 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2000-58501 [Draft of the Invention] [Problems to be Solved by the Invention] However, even for A device is provided with a gate between the processing chambers. Since the opening is arbitrarily opened during the substrate transfer, the mist can easily pass through the opening and invade the adjacent processing chamber, thereby preventing the intrusion of the mist into the adjacent processing chamber. There is still room for improvement. Further, it is considered that the mist adhered to the gate when the opening is closed may be scattered into the adjacent processing chamber when the shutter is actuated. In particular, in the configuration of Patent Document 2, the gate is poured into the processing chamber side due to the rotation of the gate around the horizontal axis. Since it can be inverted, the attached mist or the like easily scatters when the gate is actuated (especially when it is open), and this needs to be improved. Further, in a device in which a plurality of processing chambers are adjacent, the intrusion of the mist from any of the processing chambers into the other processing chamber becomes a problem, and the opposite is often to some extent. For example, in the apparatus of Patent Document 1, when the peeling liquid is prevented from being deteriorated, it is necessary to prevent the mist from intruding from the cleaning processing chamber to the peeling processing chamber, and conversely, the intrusion of the peeling liquid (fogging liquid) into the cleaning chamber is not completed. problem. Therefore, in order to prevent the intrusion of the mist, it is preferable to discuss the countermeasures after considering the above. The present invention has been made in view of the above problems, and an object thereof is to provide a substrate processing apparatus which more effectively prevents intrusion of a mist-like processing liquid into an adjacent processing chamber. [Means for Solving the Problems] 132063.doc In order to solve the above problems, the basic configuration of the substrate processing apparatus of the present invention is as follows: a wet processing in which a substrate is supplied with a processing liquid to perform a specific wet treatment on the substrate. , and! Opening and ejecting a substrate with respect to the wet processing chamber by an opening for the earth plate to be formed on the partition wall of the wet processing chamber, the substrate processing apparatus includes a shutter mechanism that opens and closes the above The opening portion and the air flow forming means "including a nozzle member disposed outside the wet processing chamber, and when at least the opening is opened, gas is ejected from the nozzle member to form an air flow toward the opening. According to the substrate processing apparatus, when the opening portion is opened by the door opening mechanism, the gas is ejected from the nozzle member mainly when the substrate passes through the opening, thereby forming an airflow toward the opening in the wet processing chamber. And the action of the air pressure prevents the treatment liquid (fog liquid) that has passed through the opening portion from flowing out of the wet processing chamber to the outside. Therefore, it is possible to prevent the mist from flowing out more than the previous device & which uses only the door mechanism to open and close the opening. Further, in the substrate processing apparatus, preferably, the door closing mechanism includes a fourth door mechanism and a second door mechanism, and the door mechanism includes opening and closing from an indoor side of the wet processing chamber. The second door closing mechanism of the opening portion includes a shutter body that opens and closes the opening from an outdoor side of the wet processing chamber, and an upper forming mechanism that feeds the substrate through the opening from the nozzle member Thereby, a gas flow flowing from the chamber of the wet processing chamber to the indoor side is formed on the surface of the substrate. 51 132063.doc 1344392 According to the above configuration, since the gate device (the first gate mechanism) is also provided in the wet processing chamber, it is difficult for the mist liquid to adhere to the gate body of the gate structure (second gate mechanism) of the wet processing chamber. on. Therefore, it is possible to effectively stop the mist attached to the second shutter mechanism or the dry matter from scattering to the outdoor side of the wet processing chamber when the shutter mechanism is actuated. Further, when the substrate passes through the opening portion, the air current flowing through the indoor side of the wet processing chamber is formed on the surface of the substrate by the air flow forming means, thereby more reliably preventing the mist processing chamber from flowing out. The specific configuration includes, for example, an adjacent processing chamber that communicates with the wet processing chamber via the opening, and performs pre-treatment or post-processing of the wet processing on the substrate. In this case, The second shutter mechanism and the nozzle member are provided in the adjacent processing chamber. According to the above configuration, it is possible to effectively prevent the mist from scattering into the adjacent processing chamber during the operation of the shutter and the mist to pass through the opening during the substrate transfer to enter the adjacent processing chamber. Further, in the substrate processing apparatus as described above, the apparatus further includes a door closing control unit that closes the closed state of the opening by the shutter body and opens the shutter body to a specific retracted position. The driving state of each of the shutter mechanisms is switched between the open states of the openings. When the substrate passes through the openings, the gate control mechanism switches the first shutter mechanism from the closed state to the open state. 2 The gate mechanism is switched from the closed state to the open state. According to the above configuration, the second shutter mechanism on the outdoor side is always switched to the open state of 132063.doc 1344392 at the time of the substrate conveyance, so that the first shutter mechanism on the indoor side of the wet processing chamber is always opened, thereby effectively preventing the mist. Attached to the second gate door body. In this case, it is preferable to further include an air flow forming control unit that controls the air flow forming mechanism to supply the gas in synchronization with the operation of switching the first shutter mechanism from the closed state to the open state. . According to the above configuration, since the supply of the gas is started simultaneously with the opening of the opening, it is more effective to prevent the mist from flowing out of the wet processing chamber.

又’於如上所述之基板處理裝置巾,較佳的構成為,上 述各閘門機構中之至少第2閘門機構使上述閘門本體沿上 述間隔壁之壁面滑動,藉此來開啟及關閉上述開口部。 如此’根據使閘門本體沿間隔壁之壁面滑動之構成,閘 門本體不會像所謂可倒式開閉構造般大幅搖動,因此,即 使假設在霧液已附著於閘門本體上之情況下,亦難以引起 霧液專飛散。Further, in the substrate processing apparatus according to the above aspect, at least the second shutter mechanism of the shutter mechanism slides the shutter body along a wall surface of the partition wall to open and close the opening . Thus, according to the configuration in which the shutter body is slid along the wall surface of the partition wall, the shutter body does not shake as much as the so-called reversible opening and closing structure. Therefore, even if it is assumed that the mist has adhered to the gate body, it is difficult to cause The mist is scattered.

it夕冑於具有鄰接㈣式處理室之鄰接處理室的基板 處理裝置之情況,較佳為,上述鄰接處理室進一步具有: 於該處理室内以包圍上述開口部附近之方式所形成I預備 室;以及對上述預備室内之環境氣體進行排氣之預備 氣機構。 根據上述構成,伴隨第2間門機構對開口部之開放動 作,即使附著於閉門本體上之霧液已飛散或者穿過開口部 而從濕式處理室相丨I ρ θ λ 2丨抑+ 至側已杈入到鄰接處理室側,上述霧液亦會 迅速地從預備室排出到外部》 132063.doc 1344392 再者,於本發明之基板處理裝置中,亦可對上述基本構 成添加如下之構成。即,作為上述濕式處理室,其構成 :,具有在基板搬送方向上排列之第1處理室以及第2處理 室,並於各處理室中使用相互不同之處理液來對基板依序 實細# 濕式處理,^__t ifc H >C F1 Λ- rfe 〇> 述相互不同之處理液之間的關係要求 為,抑制在進行基板處理時於其中之一處理液中混入有另 -處理液,在上述第i處理室與上述第2處理室之間設置有 中間室,作為上述開口部,在上述第i處理室與中間室之 _壁上設置有第旧口部’並在上述中間室與第2處理室 之間隔壁上設置有第2開口部,進而,作為上述間門機 構,設置有分別開啟及關閉上述第卜帛2開口部之問門機 構,上述氣流形成機構之構成為,於上述中間室具備上述 喷嘴構件,且藉由使氣體從上述喷嘴構件噴出而形成朝向 對象開口部之氣流,上述對象開口部係指上述糾開口部 及第2開口部中之一開口部,將位於使用有上述另一處理 液之處理室與中間室之間的開口部作為該對象開口部,該 基板處理裝置進-步設置有中間室排氣機構,其在上述氣 流形成機構之上述噴嘴構件與上述對象開口部之間的位置 上具有排氣π ’通過該排氣π對上述中間室内進行排氣。 此處’戶"胃「相互不同之處理液」之概念為,除性質(屬 性)相互不同之處理液以外’還包含性質相互共通而種類 不同之處理液、以及性質及種類共通而僅濃度相互不同之 處理液等。 根據該基板處理裝置,在第i處理室與第2處理k㈣ 132063.doc -11 . 1344392 f有1ί7間至’且使用有上述另_處理液之處理室側之開口 部(上述對象開口部)被開放,此時,從設置於上述中間室 中之喷嘴構件朝向上述對象開口部喷出氣體,其結果可防 止霧液(另-處理液)從上述對象開口部流出。而且,即使 在上述霧液已有若干流出之情況下,由於利用中間室排氣 機構對巾間至進行排氣,故上述霧液會從巾間室向外部排 氣。此時,由於排氣口設置在喷嘴構件與上述對象開口部 之間的位置上’故已流出之霧液會被迅速地排出。因此, 有效地阻止上述霧液侵人f彳另—處理室(即,使用有上述 之-處理液之處理室),從而阻止上述之另一處理液混入 到上述之一處理液中。 <再者,於該基板處理裝置中,較佳為,於上述中間室内 又置有刀隔壁’藉此將上述中間室之内部分隔為包含上述 喷嘴構件之噴嘴室、及包含上述對象開〇部以及排氣口之 氧至上述噴嘴構件使氧體穿過設置於上述分隔壁上之 基板搬送用的開口部而向上述排氣室側噴出。 T據上述構&,即使在有若干霧⑯穿過上述對象開口部 <出之隋况下,亦旎夠利用分隔壁而有效地防止霧液向 另一處理室側擴散。因此,可更有效地阻止上述霧液侵入 到上述另一處理室。 又較佳為,上述氣流形成機構從上述喷嘴構件來對通 匕上述對象開σ部之基板供給氣體,藉此形成沿上述基板 表面從上述中間室側向處理室側流動之氣流。 根據上述構成,在基板通過上述對象開口部之期間,於 132063.doc •12· 1344392 基板表面上形成有從中間室側向處理室側流動之氣流從 而有效地防止霧液從處理室沿著基板流出。 另外’於上述裝置中,上述相互不同之處理液係漢度不 同之同類之處理液,且尚濃度之處理液係於上述第1處理 室中使用者,上述喷嘴構件被設置為,以上述第2開口部 作為上述對象開口部並向該開口部喷出氣體。 於該裝置中,在各處理室中實施同種之處理,但具有上 鲁=裝置構成之結果為’有效地防止低濃度之霧液(處理液) 從第2處理室流出並侵入到第1處理室。因此,能夠有效地 防止低遭度之霧液混入到高濃度之處理液中而使該處理液 被稀釋之不良情形。該構成特別對於具備以下機構之裂置 有用.對上述第1處理室内進行排氣之處理室排氣機構、 以及為了再使用上述排氣中所含之霧液而將其捕集之捕集 機構#即,虽捕集並再使用於上述排氣中所含之霧液 (高濃度之霧液)時,若採用上述裝置構成,則具有可有效 • 地防止經捕集'再使用之高濃度處理液被稀釋之優點。Preferably, the adjacent processing chamber further includes: an I preliminary chamber formed to surround the opening portion in the processing chamber; And a preparatory gas mechanism for exhausting the ambient gas in the preparation chamber. According to the above configuration, even if the second door mechanism opens to the opening portion, even if the mist adhered to the door closing body has scattered or passed through the opening portion, the wet processing chamber phase 丨I ρ θ λ 2 + + The side has been inserted into the adjacent processing chamber side, and the mist is quickly discharged from the preliminary chamber to the outside. 132063.doc 1344392 Further, in the substrate processing apparatus of the present invention, the following constitution may be added to the above basic configuration. . In other words, the wet processing chamber has a first processing chamber and a second processing chamber which are arranged in the substrate transporting direction, and the processing chambers are used to separate the substrates in each processing chamber. #湿处理,^__t ifc H >C F1 Λ- rfe 〇> The relationship between the mutually different treatment liquids is required to suppress the mixing of one of the treatment liquids during the substrate treatment. The liquid is provided with an intermediate chamber between the i-th processing chamber and the second processing chamber, and as the opening, an old mouth portion is provided on the wall of the i-th processing chamber and the intermediate chamber, and is in the middle a second opening is provided in the partition wall between the chamber and the second processing chamber, and a door mechanism for opening and closing the opening of the second opening 2 is provided as the door mechanism, and the airflow forming mechanism is configured The nozzle member is provided in the intermediate chamber, and the gas is ejected from the nozzle member to form an airflow toward the target opening, and the target opening is an opening of the correction opening and the second opening. An opening portion between the processing chamber and the intermediate chamber using the other processing liquid is used as the object opening, and the substrate processing apparatus is further provided with an intermediate chamber exhausting mechanism, the nozzle of the airflow forming mechanism The intermediate chamber is exhausted by the exhaust gas π at a position between the member and the opening of the object. Here, the concept of 'household' and stomach's "different treatment liquids" is that, in addition to the treatment liquids having different properties (attributes), the treatment liquids having different properties and different types, and the properties and types are common, and only the concentration is common. Different treatment liquids, etc. According to the substrate processing apparatus, the i-th processing chamber and the second processing k (four) 132063.doc -11. 1344392 f have an opening portion (the target opening portion) on the processing chamber side using the other processing liquid. When it is opened, the nozzle member provided in the intermediate chamber is ejected toward the target opening, and as a result, the mist (other-treatment liquid) is prevented from flowing out from the target opening. Further, even when the mist liquid has flowed out a certain amount, the mist is discharged from the towel compartment to the outside by the intermediate chamber exhaust mechanism. At this time, since the exhaust port is provided at a position between the nozzle member and the opening of the object, the mist which has flowed out is quickly discharged. Therefore, it is effective to prevent the above-mentioned mist from invading the other processing chamber (i.e., using the processing chamber having the above-described processing liquid), thereby preventing the other processing liquid from being mixed into one of the above treatment liquids. Further, in the substrate processing apparatus, preferably, a knife partition wall is disposed in the intermediate chamber to partition the inside of the intermediate chamber into a nozzle chamber including the nozzle member, and the object opening The oxygen in the portion and the exhaust port to the nozzle member causes the oxygen to pass through the opening for substrate transfer provided on the partition wall, and is discharged to the exhaust chamber side. According to the above configuration, even when a plurality of mists 16 pass through the opening portion of the object, it is possible to effectively prevent the mist from diffusing toward the other processing chamber side by using the partition wall. Therefore, it is possible to more effectively prevent the above-mentioned mist from intruding into the above other processing chamber. Further, it is preferable that the airflow forming means supplies a gas to the substrate passing through the target opening σ from the nozzle member, thereby forming an airflow flowing from the intermediate chamber side to the processing chamber side along the substrate surface. According to the above configuration, while the substrate passes through the target opening portion, a flow of air flowing from the intermediate chamber side to the processing chamber side is formed on the surface of the substrate 132038.doc • 12· 1344392 to effectively prevent the mist from flowing from the processing chamber along the substrate. Flow out. Further, in the above apparatus, the mutually different processing liquids are processing liquids of the same type different in degree, and the processing liquid of the concentration is the user in the first processing chamber, and the nozzle member is provided in the above The opening portion serves as the target opening portion and discharges gas to the opening portion. In this apparatus, the same treatment is carried out in each of the processing chambers. However, as a result of the configuration of the device, it is effective to prevent the low-concentration mist (treatment liquid) from flowing out of the second processing chamber and entering the first treatment. room. Therefore, it is possible to effectively prevent the low-temperature mist from being mixed into the high-concentration treatment liquid to make the treatment liquid diluted. This configuration is particularly useful for the rupture of the following means: the processing chamber venting means for exhausting the first processing chamber, and the trapping mechanism for collecting the mist contained in the exhaust gas #, that is, when the mist (high-concentration mist) contained in the exhaust gas is collected and reused, the above-mentioned apparatus is used to effectively prevent the high concentration of the collected 'reuse'. The advantage of the treatment liquid being diluted.

[發明之效果;I 根據本發明之請求項卜12之基板處理裝置,在基板通過 開口部等時,從喷嘴構件喷出氣體,並於其氣壓之作用 - 下,防止已穿過上述開口部之處理液(霧液)從濕式處理室 内向室外流出。因此,與僅利用閘門機構來開啟及關閉開 口部之先别裝置相比,能夠更可靠地防止霧液流出。 特別是根據請求項2〜7之基板處理裝置,於濕式處理室 内亦配置有間門機構,霧液難以附著於濕式處理室外之閘 I32063.doc 13 理6 t Μ門本體上’因此能夠有效地防止附著於濕式處 卜之閘門機構上的霧液或者乾燥物在在閘門作動時飛 散到濕式處理室之室外側。 此外,根據請求項8〜12之基板處理裝置,其構成為,在 :為濕式處理室之第!處理室與第2處理室之間設置有中間 2於上述中間室設置有喷嘴構件並朝向對象開口部喷出 氣體且藉由排氣機構而對上述中間室進行排氣,因此, Ρ使假叹在霧液從對象開口部已流出之情況下,亦能夠將 δ霧液從中Ρ4至向外部迅速地排出’ %而能夠有效地防止 霧液從第1、第2處理室中之一處理室向另一處理室侵入。 【實施方式】 利用附圖對本發明之較佳實施形態進行說明。 <第1實施形態> 圖1表示本發明之基板處理裝置之一例。該圖中所示之According to the substrate processing apparatus of claim 12 of the present invention, when the substrate passes through the opening or the like, gas is ejected from the nozzle member, and under the action of the air pressure, the passage portion is prevented from passing through the opening portion. The treatment liquid (fog liquid) flows out of the wet processing chamber to the outside. Therefore, it is possible to more reliably prevent the mist from flowing out than the prior art device which uses only the shutter mechanism to open and close the opening portion. In particular, according to the substrate processing apparatus of claims 2 to 7, a door mechanism is also disposed in the wet processing chamber, and it is difficult for the mist to adhere to the shutter of the wet processing chamber. It is effective to prevent the mist or dry matter adhering to the wet door mechanism from scattering to the outdoor side of the wet processing chamber when the gate is actuated. Further, the substrate processing apparatus according to the claims 8 to 12 is configured as: the wet processing chamber! A middle portion is provided between the processing chamber and the second processing chamber. The nozzle member is provided in the intermediate chamber, and the gas is ejected toward the target opening portion, and the intermediate chamber is exhausted by the exhaust mechanism. Therefore, the sigh is made When the mist liquid has flowed out from the opening of the object, the delta mist can be quickly discharged from the middle 4 to the outside, and the mist can be effectively prevented from flowing from one of the first and second processing chambers to the other. A treatment chamber invades. [Embodiment] A preferred embodiment of the present invention will be described with reference to the drawings. <First Embodiment> Fig. 1 shows an example of a substrate processing apparatus of the present invention. As shown in the figure

基板處理裝置係一邊搬送基板s 一邊以預定之順序對基板S 實施特定之處理的過程處理裝置,該圖概略地表示其中之 一部分。 如該圖所示,基板處理裝置具備··對基板S供給藥液(處 理液)並實施特定之藥液處理之濕式處理部2、以及對基板 S實施乾式清洗等處理以作為其前處理之前處理部Ιβ各處 理部1、2分別具有箱形之密閉的處理室10、2〇。該等處理 至10、20共有間隔壁11並鄰接,且穿過形成於該間隔壁u 上之基板搬送用的開口部1 la而相互連通。開口部Ua係於 寬度方向(與基板S之搬送方向正交之方向,該圖中為垂直 132063.doc -14- 1344392 於紙面之大A λ , D )上呈細長之長方形的形狀,並且形成為使 基板s通過時的 者 要之大小。再者,於以下說明 田β及「上游侧」、「下游側」時,係指基於基板8之 搬送方向之側。 、《處理室1 〇 ' 2〇之内部之構成為,以特定間隔配備有 複數個搬送輥5 ’於該等搬送輥5之驅動下,將基板S以水 平姿勢搬送。The substrate processing apparatus is a process processing apparatus that performs a specific process on the substrate S in a predetermined order while transporting the substrate s. This figure schematically shows a part thereof. As shown in the figure, the substrate processing apparatus includes a wet processing unit 2 that supplies a chemical liquid (processing liquid) to the substrate S, performs a specific chemical liquid processing, and performs a dry cleaning treatment on the substrate S as a pretreatment thereof. Each of the processing units 1、β has a box-shaped sealed processing chamber 10 and 2, respectively. These processes are 10 to 20 in common with the partition walls 11 and are adjacent to each other, and communicate with each other through the opening portions 1 la for substrate transfer formed on the partition walls u. The opening Ua is formed in a widthwise direction (a direction orthogonal to the conveying direction of the substrate S, in the figure, a vertical 132063.doc -14-1344392 on the large surface A λ , D ) of the paper surface, and is formed in an elongated rectangular shape, and is formed The size is required for the substrate s to pass. In addition, when the field β and the "upstream side" and the "downstream side" are described below, it means the side based on the conveyance direction of the substrate 8. The inside of the "processing chamber 1" is configured such that a plurality of conveying rollers 5' are provided at a predetermined interval, and the substrate S is conveyed in a horizontal posture by the driving of the conveying rollers 5.

如該圖所不,於前處理部丨之處理室1〇(相當於本發明之 鄰接處理室)之内部,劃分形成有包圍開口部ua之預備室 12。藉此,將處理室1〇内包含開口部lu之一部分空間與 除此以外之空間隔離開。As shown in the figure, the preparation chamber 12 surrounding the opening portion ua is formed inside the processing chamber 1 (corresponding to the adjacent processing chamber of the present invention) of the pretreatment portion. Thereby, a part of the space including the opening portion lu in the processing chamber 1 is separated from the space other than the space.

在預備室12中與上述間隔壁丨丨對向之壁面上成為如下構 成:形成有基板S之通過口 12a,基板S穿過該通過口 12a而 通過預備室12。而且,於該預備室12中,其頂棚部分上連 通連接有排氣通路12b。該排氣通路12b向處理室1〇之外部 導出並且連接於負壓泵13等,由此構成為預備室12内之環 境氣體總是被排氣。再者’於本實施形態中,該排氣通路 12b及負壓泵13等相當於本發明之預備室排氣機構。 於預備室12内’配備有開啟及關閉上述開口部i la之閘 門裝置14(相當於本發明之第2閘門機構)。 該閘門裝置14係由以下部分構成:用以從前處理部i側 開啟及關閉開口部11 a之閘門本體15、以及驅動該閘門本 體15之驅動機構。 閘門本體15具有在寬度方向上細長之平板形狀,且整體 132063.doc -15- 1344392 係由具有耐化學性之材料所構成。驅動機構係以使該閉門 她5沿間隔壁11之壁面上下移動之方式而構成。具體而 °如圖2所示,其構成為具有:沿間隔壁u引導閘門本 體η之引導件16;設置於該引導件16上之齒條m 具備分別喃合於該等齒條16a、⑽之小齒輪i7a、i7b之驅 動軸17;以及驅動該驅動軸17之馬達18等;因應上述驅動 軸17之正反旋轉驅動,使閘門本體15在閉止上述開口部 a之位置(圖1中實線所示之位置)及退避到相較開口部11 & 更下方而開放該開π部lla之位置(圖!中二點鎖線所示之 位置)之間移動。另外,於以下說明巾,將藉由閘門本體 15而閉止開口部lla之狀態稱作閘門裝置14之「閉止狀 態」’將閘Η本體15退避到開口部以之下方並開放該開口 部1 la之狀態稱作閘門裝置14之「開放狀態」。 在處理室10内’於預備室12之緊隨上游側之位置上配備 有上下一對之空氣喷嘴19a、19b(相當於本發明之喷嘴構 件)。該等空氣噴嘴19a、19b之構成為,其係由具有在寬 度方向上連續或者斷續延伸之狹縫狀之開口的所謂狹縫喷 嘴所構成,並且相對於搬送期間的基板S之上下各面,分 別從上游側向下游側(亦即,朝向濕式處理部2侧)在傾斜方 向上呈帶狀地噴出氣體。於本實施形態中,將清潔度及溫 濕度已調整為特定水準之所謂CDA(clean Dry Ah :清潔乾 燥空氣,以下,簡稱為「空氣」)噴出。 “ i 該等空氣喷嘴19a、19b之構成為,經由具有電磁閥等之 空氣供給管19而連接於圖外之空氣供給源,並因應於上述 I32063.doc 電磁閥等之控制而進行來自各空氣嘴嘴19a、19b之空氣的 噴出與停止之切換以及空氣噴出量之調整。另外,於本實 施形態中’空氣喷嘴19a、19b、空氣供給管19以及空氣供 給源等相當於本發明之氣流形成機構。 另一方面,於濕式處理部2之處理室20(相當於本發明之 濕式處理室)内部,配備有用以對基板s供給藥液之複數個 藥液噴嘴22。該等藥液喷嘴22係由將藥液以霧狀喷出之所 謂噴霧嘴所構成,並以特定之排列配置於搬送輥5之上 部。該等藥液噴嘴22之構成為,經由具有電磁閥等之藥液 供給管23而連接於圖外之空氣供給源,並因應於上述電磁 閥等之控制而進行來自各藥液喷嘴22之藥液的喷霧與停止 之切換以及藥液喷出量之調整。 此外,於處理室20内,與上述閘門裝置14分開而配備有 另用以從濕、式處理部2側開啟及關閉上述開口部山之閉 門裝置24(相當於本發明之第!閘門機構)。 再取你興刖處------- U衣罝Μ之構 成共通…其係由用以開啟及關閉開口部Ua之閘門本 體25、及驅動該間門本體25之驅動機構所構成,並且構成 為’於藉由閘門本體25而堵塞開口部以之「閉止狀態」、 錢閉π本體15退避到開口部lla之下方而開放該開口部 11 a之開放狀態J之間可切換Γ圄彳由香必 示之狀態小 了刀換(圖1中實線及二點鎖線所 I32063.doc 1344392 等上之各電磁閥、閘門裝置14、24之馬達18等全部連接於 該控制器6’從而藉由該控制器6總括地進行㈣。特別是 在從前處理部】向濕式處理部2搬送基板叫,在控制器6之 控制下,由閘門裝置14、24引起的開口部! u之開啟及關 閉等動作以圖3所示之順序而進行,由此防止霧狀之藥液 從濕式處理部2向前處理部丨侵入。以下,將對此進行說 明。另夕卜,於本實施形態、中,該控制器6相當於本發明之 間門控制機構以及氣流形成控制機構。 該裝置中,於基板S之處理期間,如圖丨之實線所示各 處理部1、2之閘門裝置14、24被驅動控制為閉止狀態。由 此’各處理室10、20成為非連通狀態,從而防止於基板s 之處理期間在濕式處理部2侧產生的霧狀之藥液(以下,僅 稱為「霧液」)向前處理部1側侵入。 當各處理部丨、2中基板S之處理結束時,濕式處理部2中 =基板s被搬出至下一步驟,並且前處理部丨之基板s被搬 送至濕式處理部2。 此時,在將基板S從前處理部1向濕式處理部2搬送時, 以圖3所示之順序進行開口部lla之開啟及關閉等動作。 首先,在藉由圖外之感測器檢測到連續搬送而來之基板 S已到達較空氣喷嘴19a、19b更上游側之特定位置時,將 前處理部1之閘門裝置14切換為開放狀態。然後,當該閘 門裝置14成為完全的開放狀態時,將濕式處理部2之閘門 裝置24切換為開放狀態,且開始從空氣噴嘴19&、工外喷出 空氣。 ' 132063.doc -18· 1344392 由此,基板S—方面通過預備室12,一方面穿過開口部The wall surface facing the partition wall in the preliminary chamber 12 is configured such that the passage opening 12a of the substrate S is formed, and the substrate S passes through the passage opening 12a and passes through the preliminary chamber 12. Further, in the preliminary chamber 12, an exhaust passage 12b is connected to the ceiling portion thereof. The exhaust passage 12b is led out to the outside of the processing chamber 1b and connected to the negative pressure pump 13 or the like, whereby the ambient gas in the preliminary chamber 12 is always exhausted. Further, in the present embodiment, the exhaust passage 12b, the negative pressure pump 13, and the like correspond to the preliminary chamber exhausting mechanism of the present invention. In the preliminary chamber 12, a shutter device 14 (corresponding to the second shutter mechanism of the present invention) that opens and closes the opening i la is provided. The shutter device 14 is composed of a shutter body 15 for opening and closing the opening portion 11a from the front processing portion i side, and a driving mechanism for driving the shutter body 15. The shutter body 15 has a flat plate shape elongated in the width direction, and the entirety 132063.doc -15-1344392 is composed of a material having chemical resistance. The driving mechanism is configured such that the closing door 5 moves down the wall of the partition wall 11. Specifically, as shown in FIG. 2, it is configured to have a guide member 16 for guiding the shutter body n along the partition wall u. The racks m disposed on the guide member 16 are respectively spliced to the racks 16a and (10). a drive shaft 17 of the pinion gears i7a, i7b; and a motor 18 for driving the drive shaft 17, etc.; in response to the forward and reverse rotation drive of the drive shaft 17, the shutter body 15 is closed at the position of the opening portion a (Fig. 1 The position shown by the line) is retracted to move between the position where the opening π portion 11a is opened (the position indicated by the two-point lock line in the figure!) is lower than the opening portion 11 & In the following description, the state in which the shutter portion 15 closes the opening portion 11a is referred to as the "closed state" of the shutter device 14, and the gate body 15 is retracted below the opening portion to open the opening portion 1a. The state is referred to as the "open state" of the shutter device 14. In the processing chamber 10, a pair of upper and lower air nozzles 19a, 19b (corresponding to the nozzle member of the present invention) are provided at a position immediately following the upstream side of the preliminary chamber 12. The air nozzles 19a and 19b are configured by so-called slit nozzles having slit-like openings that continuously or intermittently extend in the width direction, and are opposite to the upper and lower faces of the substrate S during the conveyance period. The gas is ejected in a strip shape in the oblique direction from the upstream side to the downstream side (that is, toward the wet processing unit 2 side). In the present embodiment, a so-called CDA (clean dry air, hereinafter abbreviated as "air") whose cleanliness and temperature and humidity have been adjusted to a specific level is ejected. "i" the air nozzles 19a, 19b are connected to an air supply source outside the drawing via an air supply pipe 19 having a solenoid valve or the like, and are supplied from the respective air in accordance with the control of the I32063.doc solenoid valve or the like. In the present embodiment, the air nozzles 19a and 19b, the air supply pipe 19, the air supply source, and the like are equivalent to the airflow formation of the present invention. On the other hand, in the processing chamber 20 (corresponding to the wet processing chamber of the present invention) of the wet processing unit 2, a plurality of chemical liquid nozzles 22 for supplying a chemical liquid to the substrate s are provided. The nozzle 22 is composed of a so-called spray nozzle that ejects the chemical liquid in a mist form, and is disposed in a predetermined arrangement on the upper portion of the transport roller 5. The chemical liquid nozzle 22 is configured to pass through a chemical liquid having a solenoid valve or the like. The supply pipe 23 is connected to an air supply source outside the drawing, and the switching of the spraying and stopping of the chemical liquid from each of the chemical liquid nozzles 22 and the adjustment of the chemical liquid discharging amount are performed in accordance with the control of the electromagnetic valve or the like. In the processing chamber 20, a door closing device 24 (corresponding to the first gate mechanism of the present invention) for opening and closing the opening portion from the wet processing unit 2 side is provided separately from the shutter device 14. Take the rest of your life ------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------- Further, the configuration is such that the opening portion of the opening portion 11a is closed by the shutter main body 25, and the opening portion J is retracted below the opening portion 11a.彳The state of the incense must be changed by the knife (the solid solenoid and the two-point lock line I32063.doc 1344392, etc., the solenoid valves, the brake devices 14, 24, the motor 18, etc. are all connected to the controller 6' The controller 6 collectively performs (4). In particular, the substrate processing unit transfers the substrate to the wet processing unit 2, and under the control of the controller 6, the opening of the opening portion u is caused by the shutter devices 14 and 24. And the actions such as closing are performed in the order shown in FIG. 3, thereby preventing The mist-like chemical liquid intrudes from the wet processing unit 2 to the front processing unit. Hereinafter, this will be described. In addition, in the present embodiment, the controller 6 corresponds to the door control of the present invention. The mechanism and the airflow forming control means. In the apparatus, during the processing of the substrate S, the shutter devices 14 and 24 of the processing units 1 and 2 are driven and controlled to be in a closed state as indicated by the solid line in Fig. 。. When the chambers 10 and 20 are in a non-connected state, the mist-like chemical liquid (hereinafter simply referred to as "fog liquid") generated on the side of the wet processing unit 2 during the processing of the substrate s is prevented from entering the front processing unit 1 side. When the processing of the substrate S in each of the processing units 2 and 2 is completed, the substrate s in the wet processing unit 2 is carried out to the next step, and the substrate s of the pre-processing unit 搬 is transported to the wet processing unit 2. At this time, when the substrate S is transported from the pretreatment unit 1 to the wet processing unit 2, operations such as opening and closing of the opening portion 11a are performed in the order shown in FIG. First, when the substrate S that has been continuously transported by the sensor outside the figure has reached a specific position on the upstream side of the air nozzles 19a and 19b, the shutter device 14 of the preprocessing unit 1 is switched to the open state. Then, when the shutter device 14 is completely opened, the shutter device 24 of the wet processing unit 2 is switched to the open state, and air is ejected from the air nozzles 19 & ' 132063.doc -18· 1344392 Thus, the substrate S—through the preparation chamber 12, passes through the opening on the one hand

Ha而從前處理部丨(處理部10)搬入至濕式處理部2(處理部 20) 〇 ° 再者’當如此使開口部11a開放後’有時霧液會從濕式 處理部2側經由開口部lla而侵入到前處理部丨側,但如上 所述對預備室12内之環境氣體進行吸引排氣之結果為,該 霧液穿過排氣通路12b而導出。又,當基板§正在通過預備Ha is moved from the pre-processing unit (processing unit 10) to the wet processing unit 2 (processing unit 20) 〇° Further, when the opening 11a is opened in this way, the mist may pass from the wet processing unit 2 side. The opening portion 11a intrudes into the front processing portion 丨 side, but as a result of sucking and venting the ambient gas in the preliminary chamber 12 as described above, the mist liquid is led out through the exhaust passage 12b. Also, when the substrate § is being prepared

室12之時,利用從空氣喷嘴19a、19b排出之空氣而形成沿 基板S之上下兩面從上游側朝向下游側之氣流,其結果 為,防止霧液穿過開口部lla而向處理室1〇内侵入以及霧 液穿過通過口 12a而向上游側流動。因此,霧液不會從預 備室12向上游侧侵入,由此防止霧液的向前處理部1内實 質性侵入。At the time of the chamber 12, the air discharged from the air nozzles 19a and 19b forms airflow from the upstream side toward the downstream side along the upper and lower surfaces of the substrate S. As a result, the mist is prevented from passing through the opening portion 11a to the processing chamber 1 The intrusion and the mist flow through the passage port 12a and flow to the upstream side. Therefore, the mist does not intrude into the upstream side from the preparation chamber 12, thereby preventing substantial intrusion of the mist into the forward processing portion 1.

繼續搬送基板S,當基板s被完全搬入至濕式處理部2之 處理室20内時’以與上述相反之順序閉止開口部…。 即,將濕式處理部2之閘門裝置24切換為閉止狀態,且盘 此同時停止從空氣喷嘴心別噴出空氣,其後,將前處 理部1之閘Η裝置14切換為閉止狀態。藉此,以下於各處 理1、2中分別開始進行基板s之處理。 根據以上之基板處理裝置,其構成為,於前處理部丨之 f理至10内部’以包圍開口部lla之方式劃分形成有預備 室12,並對該預備室12之環境氣體進行吸引排氣,且構成 為,於該預備室12之緊隨上游側配傷有空氣喷嘴193、 ;碭#113開放之期間,利用從空氣喷嘴心、1% 132063.doc •19- 1344392 喷出之空氣而形成沿基板s之上下兩面之氣流。 因此’有效地防止霧液穿過開口部lla而向處理室_ 侵入(/爪出)或者霧液穿過通過口 !2a而向上游側流出,而 且’即使在霧液穿過開口部山並已侵入到預備室12内之 情況下,該霧液亦會迅速地穿過排氣通路12b而排出到外 部。因此,有效地防止霧液從濕式處理部2向前處理部1實 質性的侵入。 此外,該基板處理裝置之構成為,不僅於前處理部丨之 處理室10内,且於濕式處理部2内均設置有閘門裝置, 利用閘門本體25從濕式處理部2側亦開啟及關閉開口部 11a,由此而有效地防止霧液附著於前處理部丨側之閘門本 體15上。亦即,有效地防止在開口部lu閉止期間霧液附 著於前處理部1側之閘門本體15上。 特別於該裝置中,如圖3所示,在要開放開口部丨u時, 首先將前處理部丨側之閘門裝置14切換為開放狀態,然後 將濕式處理部2側之閘門裝置24切換為開放狀態,另一方 面,在要閉止開口部1 la時,首先將濕式處理部2侧之閘門 裝置24切換為閉止狀態,然後將前處理部丨側之閘門裝置 14切換為閉止狀態,故不存在前處理部1側之閘門本體 單獨堵塞開口部lla之狀態。因此,有效地防止霧液附著 於前處理部1側之間門本體15上。 而且,如上所述,各閘門裝置14、24之構成為,藉由使 閘門本體15、25沿間隔壁11上下滑動而開啟及關閉開口部 Ua,故閘門本體不會像可倒式閘門裝置般大幅搖動,因 132063.doc -20- 此,即使在霧液已附著於閘門本體丨5、25上之情況下,亦 難以引起霧液伴隨開啟及關閉動作而飛散。 從而,在開放開口部11a時已附著於閘門本體15上之霧 液飛散到前處理部丨之處理室10内之情況得以減輕,其結 果有效地防止霧液從濕式處理部2向前處理部丨侵入。 再者,關於上述的基板處理裝置’亦可採用如下之構成 作為其具體之構成。 例如,於本實施形態中’針對為防止霧液從濕式處理部 2向前處理部丨侵入而應用本發明之例進行了說明,但本發 明亦可應用於濕式處理部2與上述後處理部之間的關係 中。例如,圖4表示其一例。 該裝置之構成為,在濕式處理部2之處理室2〇與後處理 部3之處理室3〇之間的間隔壁u,(邊界壁)上形成有基板搬 送用的開口部11a,,並且將基板s穿過該開口部lla,從濕式 處理部2側向後處理部3側搬送。如該圖所示,在濕式處理 部2之處理室2〇内配備有閘門機構24,(相當於本發明之第i 閘門機構)’並在後處理部3之處理室3 〇内配備有閘門裝置 14 (相當於本發明之第2閘門機構)。該等閘門裝置} 41、24, 之構成與上述實施形態之閘門裝置14、24相同。而且,於 後處理部3之處理室30内之構成為’以包圍開口部lla,之方 式設置有預備室12’,並且穿過排氣通路i2b,來對該預備室 12'内進行吸引排氣。此外,於預備室12'(通過口 12a')之緊 隨下游側配備有空氣喷嘴19a,、19b,,在基板s之搬送期 間’藉由從空氣喷嘴19a’、19b,噴出之空氣而形成沿著基 132063.doc -21 - 板S之上下各面並朝向濕式處 閘門裝置〗4丨、24,黧夕π & σ側咖動之氣流。再者, 24等之驅動控制係以 之閉門裝置U之動作替換為後 圖:广處理部】 作後之順序而進行。 °之閘門褒置14,之動 根據如圖4所示之基板處理裝 霧液從濕式處理部2_後處 °有效地防止 與上述實施形態相同之作用效果Μ入’從而能夠發揮 此外,上述實施形態之閘門裝置14、24中’應用由㈣ 及小齒輪所形成之驅動機構而使閘門本體15、^、况 壁11滑動之方式構成,但閘以沿間隔 W v ㈣本體15、25之驅動機構亦可 用為除厂外之其他構成。例如,亦可發揮如下構成之作 用,即,向間門本體15、25中螺合插入有在上下方向上延 伸之螺旋轴,伴隨該螺旋軸之旋轉而使間門本體Μ、Μ在 上下方向上移動。 而且,間Η裝置14、24並㈣限於上述實施形態之問門 本體15、25沿間隔壁11滑動者’亦可係例如圖5⑷所示 者。該圖所示之閘門裝置14(24)具有在一部分上具備與開 口部1 la大致料大小之開σ 15a(25a)的閘門本體丨5(25)。 該閘門本體15被經由平行連桿32、32而分㈣定於間隔壁 11上之支架31所支持。於平行連桿32、32中之一者上一體 地固疋有驅動用連桿34,於該連桿34之前端連結有氣缸36 之桿36a。並且構成為,在氣缸36之桿為突出驅動狀態 下,如該圖所不,在開口部lla與開口 15a上下偏移之狀態 下,閘門本體1 5岔接於間隔壁11,由此,開口部丄丨a在閘 132063.doc -22- 1344392 門本體15之作用下閉止,另一方面,在氣缸36之桿為撤回 驅動狀態下,如圖5(b)所示,閘門本體15向遠離間隔壁u 之方向平行移動,由此而開放開口部丨la。然後,在開口 部11a如此開放之狀態下,構成為,閘門本體15之開口 15& 與上述開口部11a在基板搬送方向上並排著列’由此從而 可月b夠通穿過開口 15a而搬送基板s。根據上述這種閘門裝 置14、24之結構成,以在保持閘門本體15、25之姿態之狀 態下進行開口部11 a之開啟及關閉,因此故與上述實施形 態之閘門裝置14等相同,在動作動期間中霧液很難以發生 飛散,從而可因此,能夠有效地防止霧液伴隨該飛散而霧 液侵入向前處理部1内侵入。 再者’本發明中,作為閘門裝置14、24之具體構成,並 非係排除先前之可倒式者,但與使閘門本體滑動或者平行 移動之構造相比,可倒式之閘門構造會使霧液易飛散,因 此,從防止於閘門作動時霧液飛散之角度而言,較理想的 是採用如上述實施形態等使閘門本體15、25滑動或者平行 移動之構成。 此外,於上述實施形態及圖4之例中,在前處理部丨及後 處理部3中設置有預備室12、12,,但此係用以向外部迅速 地排出從開口部11a、lla,所侵入的霧液而設計,但例如在 濕式處理部2内產生之霧液量少,從而霧液比較難以向前 處理部1及後處理部3内侵入時,亦可省略預備室12、12,以 及排氣通路12b、12b,等構成,在開口部lla、lu,之緊隨 附近配置空氣喷嘴19a、19b、19a,、19b,。 132063.doc • 23 · 1344392 而且,於上述實施形態及圖4中,針對將本發明應用於 使前處理部i或後處理部3鄰接於濕式處理部2之基板處理 裝置之例進行了說明,但本發明亦可應用於未鄰二有前斤 理部!或後處理部3之裝置。即,本發明亦可應用於具有^ 下構成之基板處理裝置:在濕式處理部之上游側及下游側 僅設置有搬送親,-邊搬送基板卜邊於濕式處理部中進 行處理,且僅於其前後㈣基板3;或者在濕式處理部之 間隔壁上設置有基板搬入搬出兼用之單一的開口部,在搬 送輥之驅動下,一邊搬送基板8 一邊將基板s從上述開口部 搬二至濕式處理部内’並進行特定之處理,然後反轉驅動 搬送輥’將基板s從上述開口部搬出。此外,α上使前處 理部或後處理部鄰接於濕式處理部,㈣於以下所構成: 土板處理裝置,即,根據基板之種類而在前處理部及後處 理部不進行基板處理而僅使其通狀基減理裝置,本缺 亦可應用本發明。 田’、、、 <第2實施形態> 圖6表示第2實施形態之基板處理裝置。 該圖所示之基板處理裝置概略地表示一邊搬送基板3一 邊以預定之順序對基板3實施特定之處理的過程處理裝置 之一部分,具體而言,概略地表示將形成於基板§上之 阻膜剝離之步驟之構成。 ι圖所示基板處理裝置具備:對基板s供給剝離液 (處理液)並實施剝離處理之第丨剝離處理室51(相當於本發 月之第1處理至)及第2剝離處理室53(相當於本發明之第2處 J32063.doc -24- 1344392 理室)、以及介設於該等處理室5丨、53之間的中間室52。 第1制離處理室51與中間室52共有間隔壁61並鄰接,又, 中間室52與第2剝離處理室53共有間隔壁63並鄰接,且穿 過形成於該間隔壁61、63上之基板搬送用的開口部61a、 63a(分別相當於本發明之第i開口部、第2開口部)而相互連 通。各開口部61a、63a係於寬度方向(與基板8正交之方 向,該圖中為垂直於紙面之方向)上呈細長之長方形的形 狀’並且形成為使基板S通過時的充分且必要之大小。 於各處理室51、53以及中間室52之内部之構成為,以特 定間隔配備有複數個搬送輥5,於該等搬送輥5之驅動下, 將基板S沿著由該輥5所構成之搬送路徑以水平姿態向圖中 箭頭方向搬送。 於各處理室51、53之内部,分別設置有用以對基板3供 給剝離液之複數個剝離液喷嘴70、8〇0各剝離液噴嘴7〇、 80係由將剝離液以霧狀喷出之所謂喷霧嘴所構成,並且均 以特定之排列配置於搬送輥5之上方位置。 第1剝離處理室5 1之剝離液噴嘴70經由第1液供給管71而 連接於第1液罐73,並且在介設於第丨液供給管71上之泵72 之驅動以及圖外的電磁閥等之控制下,接收從上述第1液 罐73供給之剝離液並且對基板§上可供給剝離液。另一方 面,第2剥離處理室53之剝離液喷嘴80經由第2液供給管81 而連接於第2液罐83,並且在介設於第2液供給管81上之泵 82之驅動以及圖外的電磁閥等之控制下,接收從上述第2 液罐83供給之剝離液並且對基板8上可供給剝離液。即, 132063.doc -25- 1344392 於各液體罐73、83中,八 Ψ 刀別收容有濃度不同之同種制離 液’具體而言,於第1液罐73中收容有高濃度之剝離液, 由此在各處理至51、53中,分別使用濃度不同之剝離 A ic Q ^ JLti ^ —*The substrate S is continuously conveyed, and when the substrate s is completely carried into the processing chamber 20 of the wet processing unit 2, the opening portion is closed in the reverse order to the above. In other words, the shutter device 24 of the wet processing unit 2 is switched to the closed state, and the air is prevented from being ejected from the air nozzle core at the same time, and thereafter, the gate device 14 of the front processing unit 1 is switched to the closed state. Thereby, the processing of the substrate s is started in each of the following sections 1 and 2. According to the substrate processing apparatus described above, the pre-processing unit ' is configured to form the preliminary chamber 12 so as to surround the opening portion 11a, and to suck and exhaust the ambient gas of the preliminary chamber 12 And the air nozzle 193 is placed on the upstream side of the preliminary chamber 12, and the air sprayed from the air nozzle core, 1% 132063.doc • 19-1344392 is used during the opening of the air nozzle 193; A gas flow is formed along the lower two sides of the substrate s. Therefore, 'effectively prevent the mist from passing through the opening portion 11a and invading (or clawing out) to the processing chamber _ or the mist flowing out through the opening port 2a to the upstream side, and 'even if the mist passes through the opening mountain and has When it intrudes into the preliminary chamber 12, the mist also rapidly passes through the exhaust passage 12b and is discharged to the outside. Therefore, the intrusion of the mist from the wet processing unit 2 to the front processing unit 1 is effectively prevented. Further, the substrate processing apparatus is configured such that not only the processing chamber 10 of the preprocessing unit but also the shutter device is provided in the wet processing unit 2, and the shutter body 25 is also opened from the wet processing unit 2 side. The opening portion 11a is closed, whereby the mist is effectively prevented from adhering to the shutter body 15 on the side of the pretreatment portion. That is, it is effective to prevent the mist from adhering to the shutter body 15 on the pretreatment portion 1 side during the closing of the opening portion lu. In particular, in this device, as shown in FIG. 3, when the opening portion 丨u is to be opened, the shutter device 14 on the side of the pre-processing portion is first switched to the open state, and then the shutter device 24 on the wet processing portion 2 side is switched. In the open state, when the opening 1 la is to be closed, the shutter device 24 on the wet processing unit 2 side is first switched to the closed state, and then the shutter device 14 on the side of the preprocessing unit is switched to the closed state. Therefore, there is no state in which the shutter body on the side of the pretreatment unit 1 individually blocks the opening portion 11a. Therefore, the mist is effectively prevented from adhering to the door body 15 between the pretreatment portion 1 side. Further, as described above, each of the shutter devices 14 and 24 is configured to open and close the opening Ua by sliding the shutter bodies 15 and 25 up and down along the partition wall 11, so that the shutter body does not resemble a reversible gate device. If the mist is attached to the gate body 丨5, 25, it is difficult to cause the mist to scatter with the opening and closing operations. Therefore, the situation in which the mist adhered to the shutter main body 15 is scattered into the processing chamber 10 of the pretreatment portion 在 at the time of opening the opening portion 11a is alleviated, and as a result, the mist is effectively prevented from being processed forward from the wet processing portion 2. Departmental invasion. Further, the substrate processing apparatus ’ described above may have the following configuration as its specific configuration. For example, in the present embodiment, the example in which the present invention is applied to prevent the mist from entering the front processing unit from the wet processing unit 2 has been described. However, the present invention can also be applied to the wet processing unit 2 and the above. In the relationship between the processing units. For example, FIG. 4 shows an example thereof. In the apparatus, the opening portion 11a for substrate transfer is formed in the partition wall u between the processing chamber 2 of the wet processing unit 2 and the processing chamber 3 of the post-processing unit 3 (the boundary wall). Further, the substrate s is passed through the opening 11a, and is transported from the wet processing unit 2 side to the post-processing unit 3 side. As shown in the figure, a shutter mechanism 24 (corresponding to the i-th gate mechanism of the present invention) is provided in the processing chamber 2 of the wet processing unit 2, and is provided in the processing chamber 3 of the post-processing unit 3 Gate device 14 (corresponding to the second gate mechanism of the present invention). The gate devices 41 and 24 have the same configuration as the shutter devices 14 and 24 of the above-described embodiment. Further, in the processing chamber 30 of the post-processing unit 3, the configuration is such that the preliminary chamber 12' is provided so as to surround the opening portion 11a, and the inside of the preliminary chamber 12' is sucked and discharged through the exhaust passage i2b. gas. Further, air nozzles 19a, 19b are provided in the preliminary chamber 12' (through the port 12a') immediately following the downstream side, and are formed by the air ejected from the air nozzles 19a', 19b during the transport of the substrate s. Along the base 132063.doc -21 - the upper surface of the plate S and facing the wet gate device〗 4, 24, 黧 π & σ side of the flow of air. Further, the drive control of 24 or the like is replaced by the operation of the door closing device U as follows: the wide processing unit is performed in the subsequent order. In addition, it is possible to prevent the effect of the same effect as that of the above-described embodiment from being effectively prevented from being generated from the wet processing unit 2_ behind the substrate processing liquid mist as shown in FIG. In the shutter devices 14 and 24 of the above-described embodiment, the shutter body 15 and the wall 11 are slid by the driving mechanism formed by the (4) and the pinion gears, but the gates are along the interval W v (four) bodies 15 and 25 The drive mechanism can also be used as a component other than the factory. For example, it is also possible to provide a configuration in which a screw shaft extending in the vertical direction is inserted into the door main bodies 15 and 25, and the door body Μ and Μ are vertically moved in accordance with the rotation of the screw shaft. Move on. Further, the intermediate devices 14 and 24 and (4) are limited to those in which the door bodies 15 and 25 of the above-described embodiment are slid along the partition wall 11 may be, for example, as shown in Fig. 5 (4). The shutter device 14 (24) shown in the figure has a shutter body 丨 5 (25) having a portion σ 15a (25a) which is substantially the same size as the opening portion 1 la. The shutter body 15 is supported by the bracket 31 which is divided (4) on the partition wall 11 via the parallel links 32, 32. A drive link 34 is integrally fixed to one of the parallel links 32, 32, and a rod 36a of the cylinder 36 is coupled to the front end of the link 34. Further, in a state where the rod of the air cylinder 36 is in the extended driving state, as shown in the figure, the shutter body 15 is slidably connected to the partition wall 11 in a state where the opening portion 11a and the opening 15a are vertically displaced, thereby opening The part a is closed under the action of the gate body 15322.doc -22- 1344392. On the other hand, when the rod of the cylinder 36 is in the retracted driving state, as shown in Fig. 5(b), the gate body 15 is away The direction of the partition wall u moves in parallel, thereby opening the opening portion 丨la. Then, in a state in which the opening portion 11a is thus opened, the opening 15& of the shutter main body 15 is arranged side by side with the opening portion 11a in the substrate conveying direction, whereby the month b can be passed through the opening 15a. Substrate s. According to the above-described shutter devices 14 and 24, the opening and closing of the opening 11a are performed in a state in which the shutter bodies 15 and 25 are held. Therefore, the shutter device 14 and the like of the above-described embodiment are the same as During the operation, it is difficult for the mist to scatter, and therefore, it is possible to effectively prevent the mist from entering the forward processing unit 1 due to the scattering. Further, in the present invention, as the specific configuration of the shutter devices 14 and 24, the former reversible type is not excluded, but the inverted gate structure causes fogging as compared with the structure in which the shutter body is slid or moved in parallel. Since the liquid is easily scattered, it is preferable to use a configuration in which the shutter bodies 15 and 25 are slid or moved in parallel from the viewpoint of preventing the mist from scattering when the shutter is actuated. Further, in the above-described embodiment and the example of FIG. 4, the pre-processing unit 丨 and the post-processing unit 3 are provided with the preliminary chambers 12 and 12, but this is for quickly discharging the openings 11a and 11a from the outside. The mist is infiltrated, for example, the amount of the mist generated in the wet processing unit 2 is small, and when the mist is relatively difficult to enter into the front processing unit 1 and the post-processing unit 3, the preparation chamber 12 may be omitted. 12, and the exhaust passages 12b and 12b are configured such that the air nozzles 19a, 19b, 19a, and 19b are disposed in the vicinity of the openings 11a and 11a. 132063.doc • 23 · 1344392 Further, in the above embodiment and FIG. 4, an example in which the present invention is applied to a substrate processing apparatus in which the preprocessing unit i or the post processing unit 3 is adjacent to the wet processing unit 2 has been described. However, the present invention can also be applied to the non-neighboring two front parts! Or the device of the post-processing unit 3. In other words, the present invention can also be applied to a substrate processing apparatus having a configuration in which only a transfer parent is provided on the upstream side and the downstream side of the wet processing unit, and the substrate is transported while being processed in the wet processing unit. The substrate 3 is transported from the opening only while the substrate 8 is being transported by the transport roller while the substrate 3 is placed on the front and rear (four) substrates 3 or the partition wall of the wet processing unit. Second, in the wet processing unit, 'specific processing is performed, and then the transport roller is reversely driven to carry out the substrate s from the opening. Further, α is configured such that the pretreatment unit or the post-processing unit is adjacent to the wet processing unit, and (4) is configured as follows: the earth sheet processing apparatus, that is, the substrate processing is not performed in the pre-processing unit and the post-processing unit depending on the type of the substrate. The present invention can also be applied to only the through-base reduction device. Fields, and, <Second Embodiment> Fig. 6 shows a substrate processing apparatus according to a second embodiment. The substrate processing apparatus shown in the figure schematically shows a part of a process processing apparatus that performs a specific process on the substrate 3 in a predetermined order while transporting the substrate 3, and specifically, a resist film to be formed on the substrate § The composition of the stripping step. The substrate processing apparatus shown in FIG. 1 includes a second peeling processing chamber 51 (corresponding to the first processing of the present month) and a second peeling processing chamber 53 (which are supplied to the substrate s and supplied with the peeling liquid (processing liquid)). Corresponding to the second aspect of the present invention, J32063.doc -24-1344392, and the intermediate chamber 52 interposed between the processing chambers 5, 53. The first separation processing chamber 51 and the intermediate chamber 52 share a partition wall 61 and are adjacent to each other. Further, the intermediate chamber 52 and the second peeling processing chamber 53 share a partition wall 63 and are adjacent to each other, and are formed through the partition walls 61 and 63. The openings 61a and 63a for substrate transfer (corresponding to the i-th opening and the second opening of the present invention, respectively) communicate with each other. Each of the openings 61a and 63a is formed in a shape of an elongated rectangular shape in the width direction (a direction orthogonal to the substrate 8, which is a direction perpendicular to the plane of the paper), and is formed to be sufficient and necessary for passing the substrate S. size. The inside of each of the processing chambers 51 and 53 and the intermediate chamber 52 is configured such that a plurality of conveying rollers 5 are provided at a predetermined interval, and the substrate S is driven by the rollers 5 under the driving of the conveying rollers 5. The transport path is transported in a horizontal direction in the direction of the arrow in the figure. In each of the processing chambers 51 and 53, a plurality of stripping liquid nozzles 70 and 80 for supplying the stripping liquid to the substrate 3 are provided, and each of the stripping liquid nozzles 7 and 80 is sprayed by the stripping liquid. The spray nozzles are configured to be disposed at a position above the transport roller 5 in a specific arrangement. The peeling liquid nozzle 70 of the first peeling processing chamber 51 is connected to the first liquid tank 73 via the first liquid supply pipe 71, and is driven by the pump 72 disposed on the third liquid supply pipe 71 and the electromagnetics outside the drawing. Under the control of a valve or the like, the stripping liquid supplied from the first liquid tank 73 is received and the stripping liquid is supplied to the substrate. On the other hand, the peeling liquid nozzle 80 of the second peeling processing chamber 53 is connected to the second liquid tank 83 via the second liquid supply pipe 81, and is driven by the pump 82 interposed in the second liquid supply pipe 81. The stripping liquid supplied from the second liquid tank 83 is received under the control of an external solenoid valve or the like, and the stripping liquid can be supplied to the substrate 8. That is, 132063.doc -25-1344392, in each of the liquid tanks 73, 83, the same type of chaotropic liquid having different concentrations is contained in the gossip knife. Specifically, the first liquid tank 73 contains a high concentration of the stripping liquid. Thus, in each of the treatments to 51, 53, the stripping A ic Q ^ JLti ^ —* with different concentrations is used.

在第1剝離處理室51中上述間隔壁61之附近,配置有用 以伴隨基板S之搬出而去除剝離液之上下一對氣刀74、 4各氣刀74、74係由具有於上述搬送路徑之寬度方向上 、田長且長度方向上連續延伸之細長的喷出口之狹縫喷嘴所 構成’且配置於上述搬送路徑之上下兩側,以使各個噴出 口位於上述搬送路徑側且猶朝向上游側。各氣刀M、_ 由空氣供給管76而連接於圖外之空氣供給源,於圖外之電 磁閥等之操作下’接收從上述空氣供給源供給之特定流量 之空氣並且對基板S可噴出該空氣。In the vicinity of the partition wall 61 in the first peeling processing chamber 51, the pair of air knives 74 and 74 are removed from the upper and lower air knives 74, 4, and the air knives 74 and 74 are removed from the transport path. The slit nozzles of the elongated discharge ports extending in the width direction and the length of the field and extending in the longitudinal direction are disposed on the upper and lower sides of the transport path such that the respective discharge ports are located on the transport path side and are still upstream. . Each of the air knives M and _ is connected to the air supply source outside the drawing by the air supply pipe 76, and receives the air of a specific flow rate supplied from the air supply source and can eject the substrate S under the operation of a solenoid valve or the like outside the drawing. The air.

進行基板s之剝離處理 再者,於第1剝離處理室51中設置有開啟及關閉上述開 口邛61a之閘門裝置75,於第2剝離處理室53中設置有開啟 及關閉上述開口部63a之閘門裝置85。該等閘門裝置75 ' 85分別具有閘門本體75a、85a及驅動機構,其中,上述閘 門本體75a、85a整體係由具有对化學性之材料所構成且 形成為在寬度方向上細長之平板形狀,上述驅動機構係分 別驅動閘門本體75a、85a,並以馬達作為驅動源,藉由該 驅動機構而使閘門本體75a、85a分別沿間隔壁6ι、Μ之壁 面上下移動,從而可開啟及關閉上述開口部6U、63a。另 外,作為驅動機構,其圖示省略,例如使用有與第丨實施 形態之上述閘門裝置14、24相同之機構。 i32063.doc •26· 立如該圖所不,上述中間室52藉由具有基板搬送用的開口 部62a之分隔壁62而,皮分隔為上游側之喷嘴室52a與下游側 之排氣室52b。 λ在喷嘴室52a中’設有上下-對氣刀86、86(喷嘴構件), 等氣刀86 86夹隔上述搬送路徑而配置。各氣刀%^ 經由空氣供給管87而連接於上述空氣供給源,並在圖外的 $磁閥等之操作下,接收從上述空氣供給源供給的特定流 里之空氣並且對基板S上可喷出該空氣。各氣刀%、㈣ 由與配置在第i剝離處理室51中之狹縫噴嘴大致相同之狹 縫喷嘴所構成,分別配置成使喷出口位於上述搬送路徑側 且稍朝向下游側。根據該構成,從氣刀86、86噴出之空氣 穿過上述開口部62a而向第2剝離處理室53側、亦即向開口 部63a側噴出,在基板8之搬送期間,沿該基板§之上下兩 面形成有向第2剝離處理室53側流動之氣流。另外,於本 實钯形態中,該等氣刀86與86、空氣供給管87以及空氣供 給源等相當於本發明之氣流形成機構。 另方面,於排氣室52b中,其頂棚部上連接有排氣管 91。該排氣管91經由圖外之過濾器及電磁閥等而連接於負 壓泵92,由此,經由形成於排氣室52b之頂棚面上之排氣 口90而對中間室52内之環境氣體可排氣。另外,於本實施 形態中,該排氣口 90、排氣管91以及負壓泵92等相當於本 發明之中間室排氣機構。 於排氣室52b中,進而設置有從中間室52側來開啟及關 閉上述開口部63a之閘門裝置88。該閘門裝置⑼之構成係 132063.doc •27- 與上述閘門裝置75、85大致相同,藉由閘門本體88a沿間 隔壁63在中間室52側之壁面上下移動而從中間室52側可開 啟及關閉上述開口部63a。再者’於本實施形態中,該等 閘門裝置75、85、88相當於本發明之閘門機構。 设置於上述液供給管71、81、空氣供給管76、87以及排 氣官91上之各電磁閥以及上述閘門裝置75、85、88之各驅 動機構之馬達等’全部電性連接於作為驅動控制裝置之控 制器6 ’藉由該控制器6總括地進行控制。並且,於基板搬 送時,在上述控制器6之控制下,由上述閘門裝置75、 85、88引起的上述開口部61a、63a之開啟及關閉、空氣之 噴出等以圖7所示之順序而實施,由此防止霧狀剝離液(以 下’簡稱為「霧液」)從第2剝離處理室53向第1剝離處理 室5 1侵入。以下,將對此進行說明。 該裝置中’於基板S之處理期間,如圖6之實線所示,於 各閘門裝置75、85、88之作用下,開口部61&、63a閉止, 藉此’第1剝離處理室5 1、中間室5 2及第2剝離處理室5 3成 為非連通狀態’從而防止於各處理部51、53中產生之霧液 向外部擴散。另外,中間室52(排氣室52b)通過上述排氣口 90總是排氣。 當各處理室51、53中基板s之處理結束時,將第2剝離處 理室53之基板S搬出至下一步驟,並且第丨剝離處理室51之 基板S—邊通過中間室52—邊被搬送至第2剝離處理室53。 在將基板S從該第1剝離處理室51向第2剝離處理室53搬送 時,以圖7所示之順序進行開口部61a、63a之開啟及關閉 132063.doc •28· 1344392 等。 首先,在第1剝離處理室51中基板s被搬送至特定之位 置、且藉由圖外之感測器檢測到基板8之前端時,氣刀 74' 74開始噴出空氣’並且閘門裝置乃作動而開放開口部 61a,由此,基板S穿過開口部61a而從第丨剝離處理室51被 . 搬出,並且伴隨該搬出,藉由從氣刀74、74喷出之空氣而 去除基板S上之剝離液等。 接著,再於中間室52(噴嘴室52a)中,氣刀%、%開始喷 出工氣,其後,中間室52侧之閘門裝置88與第2剝離處理 室53側之閘門裝置85依序動作,從而開放上述開口部 63a藉此,基板s—邊通過中間室52 —邊被搬入至第2剝 • 離處理室53。此時,若從氣刀86、86開始噴出空氣,則該 空氣會穿過形成於分隔壁62上之開口部62a而被吹向開口 部63a,由此抑制霧液從第2剝離處理室μ流出。然後,如 圖8所不,在基板S穿過開口部63a而被搬送至第2剝離處理 • 室53内之期間,藉由從氣刀%、86喷出之空氣而形成沿基 板S之上下兩面並向下游側流動之氣流(圖中之實線箭 頭),該氣流穿過開口部63a而流入到第2剝離處理室53 内,從而防止霧液從第2剝離處理室53流出。再者,於開 ' 口。卩63 a被開放之期間,玫慮到有若幹霧液會從第2剝離處 理室53向中間室52流出,但該霧液在排氣室5沘内之排氣 的作用下,會穿過排氣口 9〇而向外部排出(參照圖8中之虛 線箭頭)’由此防止霧液從中間室52流出,亦即防止霧液 向第1剝離處理室51侵入。 132063.doc -29- 1344392 如此繼續搬送基板s,當基板s從第i剝離處理室幻被搬 出時,停止從氣刀74、74喷出空氣,並且閘門裝置75作 動,開口部61a閉止。然後,進一步搬送基板s,當基板$ 向第2剝離處理室53中之搬入結束時,亦即,本 1 田猎由配置 於第2剝離處理室53内之圖外的感測器而檢測到基板$之後 端時,在第2剝離處理室53側之閘門裝置以之作動下,開 口部63a閉止,其後,中間室52側之閘門裝置88作動並^ 裝於閉止位置,並且停止從上述氣刀86、86噴出空氣。由 此,於各處理室51、53中分別開始基板3之處理。 如上所述,在第2實施形態之基板處理裝置中,在第^剝 離處理室51與第2剝離處理室53之間設置有中間室52,於 開口部63a被開放之期間,藉由設置於中間室52之氣刀 %、86而向上述開口部…喷出空氣’故有效地防止霧液 從第2剝離處理室53流出,而且,即使假設在霧液從第⑽ 離處理室53穿過開口部63a已流出到中間室52之情況下, 該霧液亦會從中間室52被向外部排氣,從而防止其向第i 剝離處理室51侵入。因此,能夠防止如下不良情形:第2 ’ J離處理至5 3中產生的低濃度之霧液侵入到第1剝離處理 室51,由此將第1剝離處理室51之高濃度之剝離液稀釋, 從而可影響第1剝離處理室51之處理。 寺另】疋該基板處理裝置之構成為,於中間室内設置有 分隔壁62 ’藉此將中間室52内分隔為上游側之喷嘴室52丑 、下游侧之排氣至52b,一邊使空氣從喷嘴室52a側穿過開 62a而噴出,一邊對排氣室52b内進行排氣,因此,在 132063.doc •30- 1344392 分隔壁62之作用下,更有效地阻止從第2剝離處理室53济 出之霧液向上游側擴散,其結果為,高度防止霧液向第i 剥離處理室5 1侵入。 <第3實施形態> 圖9表示第3實施形態之基板處理裝置之一例。 第3實施形態之基板處理裝置係上述第2實施形態之變形 例,其係應用於如下情況者:在第2剝離處理室53中,使 用有較第1剝離處理室51更高濃度之剝離液。另外,該基 板處理裝置之基本構成係與第2實施形態之基板處理裴置 共通,故對於與第2實施形態共通之部分附以相同之符號 並省略其說明,以下說明中,對與第2實施形態之不同點 進行說明。 如該圖所示,該處理槽裝置之構成為,在中間室52之上 游側設置有排氣室52b,另一方面,在下游側設置有噴嘴 室52a,將氣刀86、86配置成使各個喷出口位於上述搬送 路徑側且稍朝向上游側。又,於排氣室52b中設置有閘門 裝置89,該閘門裝置89從中間室52側開啟及關閉間隔壁ο 之上述開口部61a。該閘門裝置89之構成係與上述閘門裝 置75、85大致相同,使閘門本體89a沿間隔壁61之中間室 52側之壁面上下移動,藉此從中間室52側可開啟及關閉上 述開口部61a。再者,於該裝置中’未設置從中間室”側 開啟及關閉間隔壁63之開口部63a的上述閘門裝置88 ^ 在該裝置中,在從第1剝離處理室51向第2剝離處理室Μ 搬送基板S時,根據上述控制器6之控制,以圖1 〇所示之順 132063.doc 31 1344392 序進行開口部61a、63a之開啟及關閉等動作。 首先,在第1剝離處理室51中,當基板S被搬送至特定位 置時,氣刀74、74開始喷出空氣,並且中間室^侧之閑門 裝置89作動’將該閘門本體89a安裝於可開放開口部❿之 位置(於此時刻,開口部61a被閉門裝置 刀-86開始喷出空氣,然後,在閉門裝置丄:動者下乱 開口部6U開放,進而在間門裝置85之作動下,開口和& 開放。由此’基板S穿過開口部㈣從第!剝離處理室51 被搬出’並且伴隨該搬出,藉由從氣刀74、74喷出之*氣 =基'S上之剝離液等。此時,若氣刀一開:喷 :乳’則該空氣會穿過形成於分隔壁62上之開口部心 而吹向開口部61a ’由此抑制霧液從第1剝離處理室51流 :並且’在基板s穿過開口部61a而從第i剝離 =出之=3,藉由從氣刀86、86喷出之空氣而形成沿基 部61a“ 游側机動之乳流,該氣流穿過開口 剝離處理第1剝離處理室51内,從而防止霧液從第1 期門Ί心出。另外’玫慮到於開口部6。被開放之 出二二T從第1剝離處理室51向中間室- 排氣口—90^夕氣室似内之排氣的作用下,會穿過 而向外部排出’由此防止霧 亦即,防止霧液向第2剝離處理室53侵入。m 如此繼續搬送基板s,當基板S從第丨剝離處 搬出時,在筮丨孝丨她各 币1釗離處理室51被 開口部6U閉止甘室51側之閘門裝置75之作動下, a閉止,並且停止從氣刀74、74噴出空氣,進而 132063.doc •32· 1344392 中間室52側之閘門裝置89作動而安裝於閉止位置。然後, 進一步搬送基板S,當基板S向第2剝離處理室53中之搬入 結束時,閘門裝置85作動,開口部63a閉止,並且停止從 氣刀86、86喷出空氣。 根據如此之第3實施形態之基板處理裝置,藉由設置於 中間室52中之氣刀86、86而朝向開口部61a噴出空氣,故 有效地防止霧液從第1剝離處理室5丨流出,並且,即使假 設在霧液從第1剝離處理室51穿過開口部61a已流出到中間 至5 2之情況下’該霧液亦會從中間室$ 2被向外部排氣,從 而防止其向第2剝離處理室53侵入。因此,根據該裝置, 能夠防患以下情形於未然:第1剝離處理室5丨中產生的低 濃度之霧液侵入到第2剝離處理室53並稀釋該第2剝離處理 室53之剝離液,由此影響在第2剝離處理室53中之剝離處 理。 再者,作為上述第2、第3實施形態之基板處理裝置之具 體構成,亦可採用如下之構成。 例如’在第2、第3各實施形態中,於中間室52内設置有 分隔壁62 ’藉此將其内部分隔為喷嘴室52a和排氣室52b, 但亦可為省略分隔壁62之構成。但對於設置有分隔壁62之 構成如上所述’即使在低浪度霧液已流出到中間室5 2内 之情況下’亦能夠有效地阻止該霧液向使用有高濃度之剝 離液的處理室側擴散。因此,從能夠更可靠地防止低濃度 之霧液向高濃度側之剝離處理室侵入之角度而言,較理想 的是設置分隔壁62。 132063.doc -33- 如又第2實施形態之基板處理裝置亦可為如下構成:例 t步具備:f十帛1剝離處理室5 1進行排氣之排氣裝置 (相*於,發明之處s室排氣機構)、以及捕集於該排氣裝 排氣中所含之霧液(高濃度霧液)的捕集裝置(相當於本 發明之捕#機構)’並且將已捕集到的霧液回收到液罐73 、使帛亦即,在捕集、再使用霧液時,考慮到若低 濃度之霧液侵入到第1剝離處理室51中,則由於低濃度之 霧液耗捕集裝置所捕集,故剝離液容易稀釋。於此方 面,若採用圖6所示之裝置構成,則能夠有效防止低濃度 之霧液向第1剝離處理室5 j侵入,因此,特別適合於將高 濃度之霧液捕集、再使用之上述裝置。料,此情形在如 下情況時亦相同,即,於第3實施形態之基板處理裝置 中,在第2剝離處理室53中捕集、再使用高濃度之霧液。 此外,於第2、第3各實施形態中,針對分別使用濃度不 同之同種處理液在各處理室51、53中實施剝離處理之基板 處理袭置進行了說明,但本發明並非限定於此。例如,亦 了應用於为別使用濃度不同之餘刻液在各處理室對基板實 施蝕刻處理之基板處理裝置。而且,除如此於各處理室十 使用濃度相互不同之同種類之處理液以外,當然,發明亦 可應用於:使用有性質(屬性,總之為作為對象之處理)相 互共通而種類不同之處理液的裝置;以及使用有性質(屬 性)相互不同之處理液的裝置,例如於上游側之處理室中 使用剝離液進行剝離處理,而於下游側之處理室中使用純 水進行清洗處理之裝置。 132063.doc -34- 1344392 再者,於上述第丨〜第3各實施形態中,針對—邊將某板§ 以水平姿勢搬送一邊對該基板S實施處理之情況進行"了說 明,當然,本發明亦可應用於一邊將基板8以傾斜姿勢(例 如’在與基板之搬送方向正交之方向上,從 丄攸具一側向另一 側傾斜之姿態)搬送一邊對該基板S實施處理之裝置。 【圖式簡單說明】 圖1係表示本發明之基板處理裝置(第丨實施形態)之一例 的概略構成圖。 圖2係表示前處理部及濕式處理部之各閘門裝置之構成 的立體圖。 圖3係表示在從前處理部向濕式處理部搬送基板時的閘 門裝置等之動作順序之示圖。 圖4係表示本發明之基板處理裝置之其他例的概略構成 圖。 圖5(a)、圖5(b)係表示前處理部及濕式處理部之各閘門 裝置之其他構成的側視圖。 圖6係表示本發明之基板處理裝置(第2實施形態)之概略 構成圖。 圖7係對從第1剝離處理室向第2剝離處理室搬送基板時 的間門等之動作順序進行說明之示圖。 圖8係表示將基板從第1剝離處理室向第2剝離處理室搬 送之狀態之示圖。 圖9係表示本發明之基板處理裝置(第3實施形態)之概略 構成圖。 132063.doc -35- 1344392 圖1 0係對從第1剝離處理室向第2剝離處理室搬送基板時 的閘門等之動作順序進行說明之示圖。 【主要元件符號說明】 1 2 前處理部 濕式處理部 10 ' 20 處理室 11a 開口部 14 ' 24 閘門裝置 15、25 閘門本體 19a ' 19b 空氣喷嘴 S 基板 132063.doc -36 -In addition, the first peeling processing chamber 51 is provided with a shutter device 75 that opens and closes the opening 61a, and the second peeling processing chamber 53 is provided with a shutter that opens and closes the opening 63a. Device 85. Each of the shutter devices 75'85 has a shutter body 75a, 85a and a drive mechanism, wherein the shutter bodies 75a, 85a are integrally formed of a chemically-formed material and formed into a flat plate shape elongated in the width direction. The driving mechanism drives the shutter bodies 75a and 85a, respectively, and uses a motor as a driving source. The driving mechanism causes the shutter bodies 75a and 85a to move downward along the wall of the partition walls 6 and Μ, respectively, so that the opening portion can be opened and closed. 6U, 63a. Further, as the drive mechanism, the illustration is omitted, and for example, the same mechanism as the above-described shutter devices 14 and 24 of the second embodiment is used. In the above-mentioned intermediate chamber 52, the intermediate chamber 52 is partitioned into an upstream side nozzle chamber 52a and a downstream side exhaust chamber 52b by a partition wall 62 having an opening portion 62a for substrate conveyance. . λ is provided in the nozzle chamber 52a by the up-and-down air knifes 86 and 86 (nozzle members), and the air knife 86 86 is disposed between the transport paths. Each of the air knives is connected to the air supply source via an air supply pipe 87, and receives air in a specific flow supplied from the air supply source under operation of a magnetic valve or the like outside the figure, and is provided on the substrate S. The air is ejected. Each of the air knives % and (4) is constituted by a slit nozzle which is substantially the same as the slit nozzles disposed in the ith peeling processing chamber 51, and is disposed such that the discharge port is located on the transport path side and slightly toward the downstream side. According to this configuration, the air ejected from the air knives 86 and 86 passes through the opening 62a and is ejected toward the second peeling process chamber 53 side, that is, toward the opening 63a side, and during the transport of the substrate 8, along the substrate § Air flows flowing to the second peeling processing chamber 53 side are formed on the upper and lower surfaces. Further, in the actual palladium form, the air knives 86 and 86, the air supply pipe 87, the air supply source, and the like correspond to the air flow forming mechanism of the present invention. On the other hand, in the exhaust chamber 52b, an exhaust pipe 91 is connected to the ceiling portion. The exhaust pipe 91 is connected to the negative pressure pump 92 via a filter, a solenoid valve or the like outside the drawing, whereby the environment in the intermediate chamber 52 is passed through the exhaust port 90 formed on the ceiling surface of the exhaust chamber 52b. The gas can be vented. Further, in the present embodiment, the exhaust port 90, the exhaust pipe 91, the negative pressure pump 92, and the like correspond to the intermediate chamber exhaust mechanism of the present invention. Further, in the exhaust chamber 52b, a shutter device 88 for opening and closing the opening portion 63a from the intermediate chamber 52 side is provided. The gate device (9) is configured to be substantially the same as the above-described shutter devices 75 and 85, and is opened from the intermediate chamber 52 side by the shutter body 88a moving downward along the partition wall 63 on the wall surface of the intermediate chamber 52 side. The opening portion 63a is closed. Further, in the present embodiment, the shutter devices 75, 85, and 88 correspond to the shutter mechanism of the present invention. The solenoid valves provided in the liquid supply pipes 71 and 81, the air supply pipes 76 and 87, and the exhaust gas 91, and the motors of the drive mechanisms of the shutter devices 75, 85, and 88 are all electrically connected to each other as a drive. The controller 6' of the control device is collectively controlled by the controller 6. Further, at the time of substrate transfer, under the control of the controller 6, the opening and closing of the openings 61a and 63a and the ejection of air by the shutter devices 75, 85, and 88 are in the order shown in FIG. In this way, the mist-like peeling liquid (hereinafter, simply referred to as "fog liquid") is prevented from entering the first peeling processing chamber 51 from the second peeling processing chamber 53. This will be described below. In the apparatus, during the processing of the substrate S, as shown by the solid line in FIG. 6, the opening portions 61 & 63, are closed by the shutter devices 75, 85, 88, whereby the first peeling treatment chamber 5 is used. 1. The intermediate chamber 5 2 and the second peeling treatment chamber 53 are in a non-connected state ′ to prevent the mist generated in each of the processing units 51 and 53 from diffusing to the outside. Further, the intermediate chamber 52 (exhaust chamber 52b) is always exhausted through the above-described exhaust port 90. When the processing of the substrate s in each of the processing chambers 51, 53 is completed, the substrate S of the second peeling processing chamber 53 is carried out to the next step, and the substrate S-side of the second peeling processing chamber 51 is passed through the intermediate chamber 52. It is conveyed to the 2nd peeling process chamber 53. When the substrate S is transferred from the first peeling processing chamber 51 to the second peeling processing chamber 53, the openings 61a and 63a are opened and closed in the order shown in Fig. 7 132063.doc • 28· 1344392 and the like. First, when the substrate s is transported to a specific position in the first peeling process chamber 51, and the front end of the substrate 8 is detected by the sensor outside the figure, the air knife 74'74 starts to eject air' and the shutter device is actuated. When the opening portion 61a is opened, the substrate S is carried out from the second peeling processing chamber 51 through the opening 61a, and the substrate S is removed by the air ejected from the air knives 74, 74 in association with the unloading. Stripping solution, etc. Then, in the intermediate chamber 52 (nozzle chamber 52a), the air knife % and % start to eject the working gas, and thereafter, the shutter device 88 on the intermediate chamber 52 side and the shutter device 85 on the second peeling processing chamber 53 side are sequentially When the opening portion 63a is opened, the substrate s is moved into the second peeling and processing chamber 53 through the intermediate chamber 52. At this time, when air is ejected from the air knives 86 and 86, the air passes through the opening 62a formed in the partition wall 62 and is blown toward the opening 63a, thereby suppressing the mist from the second peeling process chamber μ. Flow out. Then, as shown in Fig. 8, while the substrate S is transported into the second peeling treatment chamber 53 through the opening 63a, the air ejected from the air knives %, 86 is formed above and below the substrate S. The airflow (the solid arrow in the figure) flowing to the downstream side on both sides flows through the opening 63a and flows into the second peeling processing chamber 53, thereby preventing the mist from flowing out of the second peeling processing chamber 53. Furthermore, open the mouth. During the period in which the crucible 63a is opened, it is considered that some mist liquid will flow out from the second peeling processing chamber 53 to the intermediate chamber 52, but the mist will pass through the exhaust gas in the exhaust chamber 5沘. The exhaust port 9 〇 is discharged to the outside (see a broken line arrow in FIG. 8 ) to thereby prevent the mist from flowing out of the intermediate chamber 52 , that is, to prevent the mist from entering the first peeling processing chamber 51 . 132063.doc -29- 1344392 When the substrate s is continuously conveyed in this manner, when the substrate s is accidentally carried out from the i-th peeling processing chamber, air is ejected from the air knives 74 and 74, and the shutter device 75 is actuated, and the opening 61a is closed. Then, the substrate s is further conveyed, and when the loading of the substrate $ into the second peeling processing chamber 53 is completed, that is, the substrate is detected by the sensor disposed outside the drawing in the second peeling processing chamber 53 At the rear end, when the shutter device on the side of the second peeling processing chamber 53 is actuated, the opening portion 63a is closed, and thereafter, the shutter device 88 on the intermediate chamber 52 side is actuated and mounted in the closed position, and the gas is stopped from the gas. The blades 86, 86 eject air. Thereby, the processing of the substrate 3 is started in each of the processing chambers 51, 53. As described above, in the substrate processing apparatus of the second embodiment, the intermediate chamber 52 is provided between the second peeling processing chamber 51 and the second peeling processing chamber 53, and is provided in the opening portion 63a while being opened. The air knife % and 86 of the intermediate chamber 52 discharge air to the opening portion. Therefore, the mist is effectively prevented from flowing out of the second peeling processing chamber 53, and even if the mist is passed from the (10) treatment chamber 53 When the opening portion 63a has flowed out to the intermediate chamber 52, the mist is also exhausted from the intermediate chamber 52 to the outside, thereby preventing the intrusion into the i-th peeling processing chamber 51. Therefore, it is possible to prevent the problem that the low-concentration mist generated in the second 'J' treatment to the fifth portion enters the first peeling treatment chamber 51, thereby diluting the high-concentration stripping liquid of the first peeling treatment chamber 51. Therefore, the processing of the first peeling processing chamber 51 can be affected. In addition, the substrate processing apparatus is configured such that a partition wall 62' is provided in the intermediate chamber to partition the inside of the intermediate chamber 52 into the nozzle chamber 52 on the upstream side and the exhaust side on the downstream side to 52b, while allowing air to pass from The nozzle chamber 52a side is ejected through the opening 62a, and exhausts the inside of the exhaust chamber 52b. Therefore, under the action of the 132063.doc • 30-1344392 partition wall 62, the second peeling process chamber 53 is more effectively prevented. The mist liquid that has been released is diffused to the upstream side, and as a result, the mist is prevented from entering the first detachment treatment chamber 51. <Third Embodiment> Fig. 9 shows an example of a substrate processing apparatus according to a third embodiment. The substrate processing apparatus according to the third embodiment is a modification of the second embodiment, and is applied to a second peeling treatment chamber 53 using a stripping liquid having a higher concentration than the first peeling processing chamber 51. . In addition, the basic configuration of the substrate processing apparatus is the same as that of the substrate processing apparatus of the second embodiment. Therefore, the same components as those of the second embodiment are denoted by the same reference numerals, and their description will be omitted. The differences between the embodiments will be described. As shown in the figure, the processing tank apparatus is configured such that an exhaust chamber 52b is provided on the upstream side of the intermediate chamber 52, and a nozzle chamber 52a is provided on the downstream side, and the air knives 86 and 86 are disposed such that Each of the discharge ports is located on the side of the transport path and slightly toward the upstream side. Further, a shutter device 89 is provided in the exhaust chamber 52b, and the shutter device 89 opens and closes the opening portion 61a of the partition wall ο from the intermediate chamber 52 side. The shutter device 89 is configured to be substantially the same as the shutter devices 75 and 85, and the shutter body 89a is moved downward along the wall surface of the partition wall 61 on the intermediate chamber 52 side, whereby the opening portion 61a can be opened and closed from the intermediate chamber 52 side. . Further, in the apparatus, the shutter device 88 which opens and closes the opening 63a of the partition 63 from the side of the intermediate chamber is not provided in the apparatus from the first peeling processing chamber 51 to the second peeling processing chamber.搬 When the substrate S is transported, the openings 61a and 63a are opened and closed in the order of 132063.doc 31 1344392 shown in FIG. 1A according to the control of the controller 6. First, in the first peeling processing chamber 51. When the substrate S is transported to a specific position, the air knives 74, 74 start to eject air, and the idler device 89 on the intermediate chamber side is actuated to install the shutter body 89a at the position where the opening portion can be opened (in At this time, the opening portion 61a is started to eject air by the door closing device blade -86, and then, in the door closing device 丄: the lower opening portion 6U is opened, and the opening and the opening are opened by the door device 85. This 'substrate S is carried out from the first peeling processing chamber 51 through the opening (4), and the peeling liquid on the air/base'S discharged from the air knives 74 and 74 is carried out along with the unloading. The air knife opens: spray: milk' then the air will pass through the partition wall 6 2, the opening portion is blown toward the opening portion 61a', thereby suppressing the flow of the mist from the first peeling processing chamber 51: and "the substrate s passes through the opening 61a and is peeled off from the ith ==3" The air ejected from the air knives 86, 86 forms a milk flow that is "moved" along the base portion 61a, and the air flow passes through the opening peeling treatment in the first peeling processing chamber 51, thereby preventing the mist from coming out of the first stage door. In addition, it is considered to be in the opening portion 6. The opened second two T will pass through the first stripping processing chamber 51 to the intermediate chamber - the exhaust port - 90^ 气 气By discharging to the outside, the fog is prevented from entering the second peeling process chamber 53. m continues to transport the substrate s, and when the substrate S is removed from the second peeling place, When the operation chamber 51 is closed by the opening portion 6U and the shutter device 75 on the side of the chamber 51 is closed, a is closed, and air is ejected from the air knives 74 and 74, and 132062.doc •32· 1344392 is on the intermediate chamber 52 side. The shutter device 89 is actuated and attached to the closed position. Then, the substrate S is further conveyed, and the substrate S is moved to the second peeling processing chamber 53. At the end of the loading, the shutter device 85 is actuated, and the opening 63a is closed, and the air is ejected from the air knives 86 and 86. The substrate processing apparatus according to the third embodiment is provided with an air knife provided in the intermediate chamber 52. 86 and 86, the air is ejected toward the opening 61a, so that the mist is effectively prevented from flowing out of the first peeling process chamber 5, and even if the mist is passed from the first peeling processing chamber 51 through the opening 61a, it flows out to the middle. In the case of 52, the mist is also exhausted to the outside from the intermediate chamber $2, thereby preventing the intrusion into the second peeling processing chamber 53. Therefore, according to the device, it is possible to prevent the low-concentration mist generated in the first peeling treatment chamber 5 from entering the second peeling chamber 53 and diluting the stripping liquid in the second peeling chamber 53. This affects the peeling treatment in the second peeling treatment chamber 53. Further, as a specific configuration of the substrate processing apparatus according to the second and third embodiments, the following configuration may be employed. For example, in the second and third embodiments, the partition wall 62' is provided in the intermediate chamber 52 to divide the inside into the nozzle chamber 52a and the exhaust chamber 52b, but the partition wall 62 may be omitted. . However, the configuration in which the partition wall 62 is provided is as described above, 'even in the case where the low-fluid mist has flowed out into the intermediate chamber 52,' can effectively prevent the mist from being treated to a high-concentration stripping liquid. Ventilation on the side of the chamber. Therefore, it is preferable to provide the partition wall 62 from the viewpoint of more reliably preventing the low-concentration mist from entering the stripping chamber on the high-concentration side. 132063.doc -33- The substrate processing apparatus according to the second embodiment may be configured as follows: an example of the step t: an exhaust device for exhausting the exhaust gas from the processing chamber 51; a s chamber exhaust mechanism), and a trap device (corresponding to the trap mechanism of the present invention) that collects the mist (high-concentration mist) contained in the exhaust gas to be exhausted and will have been trapped When the mist liquid that has arrived is recovered in the liquid tank 73, it is considered that when the mist liquid is collected and reused, it is considered that if the mist liquid of a low concentration intrudes into the first peeling treatment chamber 51, the mist liquid of a low concentration is used. The trapping device is trapped by the trapping device, so the stripping solution is easily diluted. On the other hand, when the apparatus configuration shown in FIG. 6 is employed, it is possible to effectively prevent the low-concentration mist from entering the first peeling treatment chamber 5j. Therefore, it is particularly suitable for collecting and reusing a high-concentration mist. The above device. In this case, in the substrate processing apparatus of the third embodiment, the high-concentration mist is collected and reused in the second peeling chamber 53. Further, in the second and third embodiments, the substrate treatment in which the separation treatment is performed in each of the processing chambers 51 and 53 using the same treatment liquid having the same concentration has been described. However, the present invention is not limited thereto. For example, it is also applied to a substrate processing apparatus which performs etching processing on a substrate in each processing chamber without using a residual liquid having a different concentration. Further, in addition to the treatment liquid of the same type in which the concentration is different from each other in each of the processing chambers, the invention may be applied to a treatment liquid having different properties (properties, which are generally treated as objects) and different types of treatment liquids. And a device using a treatment liquid having different properties (property), for example, a stripping treatment using a stripping liquid in a processing chamber on the upstream side, and a cleaning treatment using pure water in a processing chamber on the downstream side. 132063.doc -34- 1344392 Further, in the above-described third to third embodiments, the case where the processing is performed on the substrate S while the plate is being conveyed in a horizontal posture is described. The present invention is also applicable to the processing of the substrate S while transporting the substrate 8 in an inclined posture (for example, an attitude of "tilting from the cooker side to the other side in a direction orthogonal to the conveyance direction of the substrate") Device. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic block diagram showing an example of a substrate processing apparatus (the second embodiment) of the present invention. Fig. 2 is a perspective view showing the configuration of each of the gate devices of the pretreatment unit and the wet processing unit. Fig. 3 is a view showing an operation sequence of a shutter device or the like when the substrate is transferred from the pre-processing unit to the wet processing unit. Fig. 4 is a schematic block diagram showing another example of the substrate processing apparatus of the present invention. Figs. 5(a) and 5(b) are side views showing other configurations of the gate devices of the pretreatment unit and the wet processing unit. Fig. 6 is a schematic block diagram showing a substrate processing apparatus (second embodiment) of the present invention. Fig. 7 is a view for explaining an operation procedure of a door or the like when the substrate is transferred from the first peeling processing chamber to the second peeling processing chamber. Fig. 8 is a view showing a state in which the substrate is transferred from the first peeling processing chamber to the second peeling processing chamber. Fig. 9 is a schematic block diagram showing a substrate processing apparatus (third embodiment) of the present invention. 132063.doc -35- 1344392 Fig. 10 is a view for explaining an operation procedure of a shutter or the like when the substrate is transferred from the first peeling processing chamber to the second peeling processing chamber. [Description of main component symbols] 1 2 Pretreatment section Wet processing section 10 ' 20 Processing chamber 11a Opening section 14 ' 24 Gate device 15 and 25 Gate body 19a ' 19b Air nozzle S Substrate 132063.doc -36 -

Claims (1)

1344392 、申請專利範圍: 2基板處理裝置’其係具有對基板供給處理液而對基 板實施特定之濕式處理之濕式處理室,且經由形成於上 述濕式處理室之間隔壁上的基板搬送用的開口部而相對 :上述濕式處理室進行基板之搬人搬出,該基板處理農 置之特徵在於包括: 2. 閉門機構’其開啟及關閉上述開口部;以及 氣流形成機構,其包括配倩於上述濕式處理室之室外 的喷嘴構件,至少在上述開口部開口時,使氣體從上述 喷嘴構件噴出,藉此形成朝向上述開口部之氣流。 如請求項1之基板處理裝置,其中 作為上述閘門機構’包括第1閘門機構及第2閘門機 構’上述第1間門機構具備從上述濕式處理室之室内側 開啟及關閉上述開口部之閘門本體,上述第2閘門機構 具備從上述濕式處理室之室外側開啟及關閉上述開 之閘門本體, 上述氣流形成機構從上述噴嘴構件對通過上述開口部 之基板供給氣體’藉此而於該基板之表面上形成自濕式 處理室之室外側向室内侧流動的氣流。 3.如請求項2之基板處理裝置,其中 機構及上述喷嘴構件。 具有鄰接處理室,該鄰接處理室經由上述開口部而連 通於上述濕式處理室並且對基板實施上述濕式處理的前 處理或者後處理,且該鄰接處理室配備有上述第2閑門 132063.doc 如請求項2或3之基板處理裝置,其中 進-步具有閘門控制機構,該間門控制機構在藉由上 述閘門本體而閉止上述開口部之閉止狀態及藉由使上述 閘門本體退避到特定之退避位置而開放上述開口部之開 放狀態之間,切換控制上述各閘門機構之驅動狀態, 在基板通過上述開口部時,上述問門控制機構在即將 將上述第㈣Η機構從閉止狀態切換為開放狀態之前, 將上述第2閘門機構從閉止狀態切換為開放狀態。 如請求項4之基板處理裝置,其中 進-步具有控制上述氣流形成機構之氣流形成控制機 構,且該氣流形成控制機構係同步於^閘門機構之自 閉止狀態朝開放狀態的切換動作而開始供給氣體。 如請求項2或3之基板處理裝置,其中 上述各閘門機構中之至少第2閉門機構係構成為藉由 使上述閘門本體沿上述間隔壁之壁面滑動來開啟及關閉 上述開口部。 言月求項3之基板處理裝置,其中 上述鄰接處理室進-步具有:於該處理室内以包圍上 相口部附近之方式所形成的預備室;以及將上述預備 室内之環境氣體進行排氣的預備室排氣機構。 如請求項1之基板處理裝置,其中 作為上述濕式處理室,其構成為具有在基板搬送方向 排列之第!處理室以及第2處理室,並於各處理室中使 用互為不同的處理液來對基板依序實施特定的濕式處 doc 理,且上述互為不同的處理液之間的關係要求為,抑制 在進行基板處理時於一方側之處理液中混入有另一方侧 之處理液, 在上述第1處理室與上述第2處理室之間設置有中間 室,作為上述開口部,在上述第丨處理室與中間室之間 隔壁上設置有第旧口冑,並在上述中間室與第2處理室 之間隔壁上設置有第2開口部,且作為上述閘門機構, 設置有分別開啟及關閉上述第1、 構, 第2開口部之閘門機 上述氣流形成機構之構成為,於上述中間室具備上述 喷嘴構件,且藉由使氣體從上述喷嘴構件喷出而形成朝 向對象開口部之氣流,上述對象開口部係指上述第i開 口部及第2開口部中之一方側的開口部,將位於使用有 上述另一方侧之處理液的處理室與中間室之間的開口部 作為該對象開口部,該基板處理裝置 進一步設置有中間室排氣機構,該中間室排氣裝置在 上述氣流形成機構之上述噴嘴構件與上述對象開口部之 間的位置上具有排氣口,並通過該排氣口對上述中間室 内進行排氣。 9·如請求項8之基板處理裝置,其中 於上述中間室設置有分隔壁,藉此將上述中間室之内 部分隔為包含上述噴嘴構件之噴嘴室、及包含上述對象 開口部以及排氣口之排氣室,且上述噴嘴構件係使氣體 通過設置於上述分隔壁上之基板搬送用的開口部而向上 132063.doc 上J44392 述排氣室側喷出。 1〇·如請求項8或9之基板處理裝置,其中 上述乱流形成機構從上述喷嘴構件來對通過上述對象 開口部的基板供給氣體’藉此形成沿上述基板表面自上 述中間室側朝處理室側流動的氣流。 如請求項8或9之基板處理裝置,其中 上述互為不同的處理液係濃度不同之同類的處理液,1344392 Patent Application No. 2: A substrate processing apparatus having a wet processing chamber that supplies a processing liquid to a substrate and performs a specific wet processing on the substrate, and transports the substrate through a partition formed on the wet processing chamber In the wet processing chamber, the substrate is moved and carried out, and the substrate processing apparatus includes: a closing mechanism 'opening and closing the opening; and an airflow forming mechanism including The nozzle member outside the wet processing chamber is configured to eject a gas from the nozzle member at least when the opening is opened, thereby forming an airflow toward the opening. The substrate processing apparatus according to claim 1, wherein the shutter mechanism includes a first shutter mechanism and a second shutter mechanism. The first door mechanism includes a shutter that opens and closes the opening from an indoor side of the wet processing chamber. In the main body, the second shutter mechanism includes a shutter body that opens and closes the opening from an outdoor side of the wet processing chamber, and the airflow forming mechanism supplies a gas from the nozzle member to a substrate passing through the opening. The air flow flowing from the outdoor side to the indoor side of the wet processing chamber is formed on the surface. 3. The substrate processing apparatus of claim 2, wherein the mechanism and the nozzle member are. Having an adjacent processing chamber, the adjacent processing chamber communicates with the wet processing chamber via the opening portion and performs pre-treatment or post-processing of the wet processing on the substrate, and the adjacent processing chamber is equipped with the second idle gate 132063. The substrate processing apparatus of claim 2 or 3, wherein the step-by-step has a gate control mechanism that closes a closed state of the opening by the shutter body and retracts the shutter body to a specific When the retracted position is opened and the open state of the opening is opened, the driving state of each of the shutter mechanisms is switched and controlled, and when the substrate passes through the opening, the door control mechanism switches the closed state to the open state. Before the state, the second shutter mechanism is switched from the closed state to the open state. The substrate processing apparatus of claim 4, wherein the step further comprises an airflow forming control mechanism for controlling the airflow forming mechanism, and the airflow forming control mechanism starts to supply in synchronization with a switching operation of the self-closing state of the shutter mechanism toward the open state. gas. The substrate processing apparatus according to claim 2 or 3, wherein at least the second closing mechanism of each of the shutter mechanisms is configured to open and close the opening by sliding the shutter body along a wall surface of the partition wall. The substrate processing apparatus of the third aspect, wherein the adjacent processing chamber further comprises: a preliminary chamber formed in the processing chamber to surround the vicinity of the upper nozzle portion; and exhausting the ambient gas in the preparation chamber The spare room exhaust mechanism. The substrate processing apparatus according to claim 1, wherein the wet processing chamber is configured to have a processing chamber and a second processing chamber arranged in a substrate transporting direction, and different processing liquids are used in each processing chamber. In order to perform a specific wet-type treatment on the substrate, the relationship between the treatment liquids which are different from each other is required to prevent the treatment liquid on the other side from being mixed into the treatment liquid on one side during the substrate treatment. An intermediate chamber is provided between the first processing chamber and the second processing chamber, and as the opening, an old port is provided in a partition wall between the second processing chamber and the intermediate chamber, and the intermediate chamber is provided in the intermediate chamber a second opening is provided in the partition wall of the second processing chamber, and the shutter mechanism is provided with a shutter mechanism for opening and closing the first and second openings, respectively. The intermediate chamber includes the nozzle member, and the gas is ejected from the nozzle member to form an airflow toward the target opening, and the target opening is the i-th opening An opening portion on one of the second opening portion and the second processing chamber is an opening portion between the processing chamber and the intermediate chamber in which the processing liquid on the other side is used as the target opening portion, and the substrate processing device is further provided with the middle portion. The chamber exhausting means has an exhaust port at a position between the nozzle member of the airflow forming means and the target opening, and exhausts the intermediate chamber through the exhaust port. 9. The substrate processing apparatus according to claim 8, wherein the intermediate chamber is provided with a partition wall, thereby partitioning the inside of the intermediate chamber into a nozzle chamber including the nozzle member, and the object opening portion and the exhaust port. In the exhaust chamber, the nozzle member discharges gas through the opening for substrate transfer provided on the partition wall, and ejects upward on the exhaust chamber side of J44392 on the upper surface 132063.doc. The substrate processing apparatus according to claim 8 or 9, wherein the turbulent flow forming means supplies a gas from the substrate of the object opening portion from the nozzle member, thereby forming a process from the intermediate chamber side toward the substrate along the substrate surface Airflow flowing on the chamber side. The substrate processing apparatus according to claim 8 or 9, wherein the processing liquids of the same type having different processing liquid concentrations are different from each other, 且高濃度之處理液係於上述第丨處理室中被使用,上述 噴嘴構件係以上述第2開口部作為上述對象開口部而向 該開口部喷出氣體。 12.如請求項11之基板處理裝置,其中 包括:對上述第丨處理室 . 、 鬥進仃排虱之處理室排氣機 冓,以及為了再使用上述排 讲轧甲所含有之霧液而將其加 从捕集之捕集機構。Further, the high-concentration treatment liquid is used in the second processing chamber, and the nozzle member discharges gas into the opening portion by using the second opening as the target opening. 12. The substrate processing apparatus of claim 11, comprising: a processing chamber exhausting chamber for the third processing chamber, a processing chamber, and a mist for containing the above-mentioned row rolling armor. Add it to the capture agency of the capture. 132063.doc132063.doc
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