JP4593908B2 - Substrate processing equipment with processing liquid - Google Patents

Substrate processing equipment with processing liquid Download PDF

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JP4593908B2
JP4593908B2 JP2003419344A JP2003419344A JP4593908B2 JP 4593908 B2 JP4593908 B2 JP 4593908B2 JP 2003419344 A JP2003419344 A JP 2003419344A JP 2003419344 A JP2003419344 A JP 2003419344A JP 4593908 B2 JP4593908 B2 JP 4593908B2
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substrate
processing
nozzle
processing liquid
end portion
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JP2005177565A (en
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幸伸 西部
明典 磯
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Shibaura Mechatronics Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G49/00—Conveying systems characterised by their application for specified purposes not otherwise provided for
    • B65G49/05—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles
    • B65G49/06—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for fragile sheets, e.g. glass
    • B65G49/063—Transporting devices for sheet glass
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67276—Production flow monitoring, e.g. for increasing throughput

Description

この発明は基板に処理液を供給して処理する処理装置に関する。 This invention relates to the processing equipment for processing by supplying a processing liquid to a substrate.

液晶表示装置に用いられるガラス製の基板には回路パターンが形成される。基板に回路パターンを形成するにはリソグラフィープロセスが採用される。リソグラフィープロセスは周知のように上記基板にレジストを塗布し、このレジストに回路パターンが形成されたマスクを介して光を照射する。   A circuit pattern is formed on a glass substrate used in the liquid crystal display device. A lithographic process is employed to form a circuit pattern on the substrate. In a lithography process, as is well known, a resist is applied to the substrate, and light is irradiated through a mask having a circuit pattern formed on the resist.

つぎに、レジストの光が照射されない部分或いは光が照射された部分を除去し、基板のレジストが除去された部分をエッチングし、エッチング後にレジストを除去するなどの一連の工程を複数回繰り返すことで、上記基板に回路パターンを形成する。   Next, by repeating a series of steps such as removing a portion of the resist not irradiated with light or a portion irradiated with light, etching the portion of the substrate where the resist is removed, and removing the resist after etching, a plurality of times. Then, a circuit pattern is formed on the substrate.

このようなリソグラフィープロセスにおいては、上記基板に現像液、エッチング液或いはエッチング後にレジストを除去する剥離液などの処理液によって基板を処理する工程があり、さらに処理液による処理後に洗浄液によって洗浄する工程などがあり、洗浄後には基板に付着残留した洗浄液を除去する乾燥工程が必要となる。   In such a lithography process, there is a step of treating the substrate with a processing solution such as a developer, an etching solution or a stripping solution for removing a resist after etching, and a step of washing with a cleaning solution after the treatment with the processing solution. After the cleaning, a drying process for removing the cleaning liquid adhering to the substrate is required.

基板に対して現像液、エッチング液或いは剥離液などの処理液による処理を行なう場合、上記基板を処理液に漬けて処理するディップ方式と、基板の板面に処理液を盛るように供給して処理するパドル方式とが知られている。   When processing a substrate with a processing solution such as a developing solution, an etching solution or a stripping solution, the substrate is immersed in the processing solution, and a dip method for supplying the processing solution on the plate surface of the substrate is supplied. A paddle method for processing is known.

パドル方式の場合、基板を搬送しながら処理することができ、しかも基板には必要量の処理液を供給すればよいため、ディップ方式に比べて生産性や経済性が高いという利点を有し、その利点に着目されてパドル方式が採用されることが多くなってきている。   In the case of the paddle method, the substrate can be processed while being transported, and the substrate only needs to be supplied with a necessary amount of processing liquid, so that it has the advantage of higher productivity and economy than the dip method. The paddle method has been increasingly adopted paying attention to the advantage.

従来、パドル方式によって基板を処理液で処理する場合、基板を搬送ローラによって処理チャンバ内に搬入する。基板が処理チャンバ内に搬送されると、所定の搬送速度で搬送される基板に対して処理チャンバ内に設けられた塗布ノズルによって基板の上面に処理液が供給される。それによって、基板の上面には処理液が層状に盛られる。その状態で、所定時間放置すれば、上記基板の板面が処理液によって処理されることになる。   Conventionally, when a substrate is processed with a processing solution by a paddle method, the substrate is carried into a processing chamber by a transfer roller. When the substrate is transported into the processing chamber, the processing liquid is supplied to the upper surface of the substrate by a coating nozzle provided in the processing chamber with respect to the substrate transported at a predetermined transport speed. As a result, the processing liquid is layered on the upper surface of the substrate. If left in that state for a predetermined time, the plate surface of the substrate is processed with the processing liquid.

ところで、処理チャンバ内に搬入された基板に対して塗布ノズルから処理液を供給する際、基板の搬送方向の前端部と後端部では、処理液が基板のエッジで跳ねるということがあり、とくに処理効率を高めるために基板の搬送速度を速くすると、その傾向が顕著になる。そのため、跳ねた処理液が基板に再付着すると、その付着した箇所は他の箇所に比べて基板の処理が進行し易くなり、その結果、基板を全体にわたって均一に処理することができないということが生じる。   By the way, when supplying the processing liquid from the coating nozzle to the substrate carried into the processing chamber, the processing liquid may jump at the edge of the substrate at the front end portion and the rear end portion in the substrate transport direction. This tendency becomes prominent when the substrate transport speed is increased in order to increase the processing efficiency. Therefore, when the splashed processing liquid is reattached to the substrate, the attached portion is more likely to proceed with the processing of the substrate as compared to other locations, and as a result, the substrate cannot be uniformly treated throughout. Arise.

この発明は、基板の搬送方向前端部と後端部とで処理液が跳ねるのを防止するようにして、基板を全体にわたって均一に処理することができるようにした基板の処理装置を提供することにある。 The present invention, so as to prevent the processing liquid splashing to in the conveying direction front end and the rear end portion of the substrate, to provide a process equipment of the substrate so as to be able to uniformly treated throughout the substrate There is.

この発明は、基板を処理液によって処理する処理装置において、
上記基板を所定方向に搬送する搬送手段と、
この搬送手段によって搬送される上記基板の上方に配置され基板の幅方向ほぼ全長にわたって上記処理液を供給するスリット状のノズルを有するノズル体と、
上記搬送手段によって搬送される上記基板の搬送方向の前端部と後端部とに上記ノズル体から処理液を供給するとき、上記前端部と後端部を除く他の部分に処理液を供給するときに比べて上記基板の搬送速度を遅くする制御手段を具備し、
上記ノズル体の先端部には、上記基板の後端部に処理液を供給し終えたときに上記ノズル内に残留する処理液を吸引してそのノズルから処理液が滴下するのを防止する複数の吸引孔が一端を上記ノズルに連通させて長手方向に所定間隔で設けられていることを特徴とする基板の処理装置にある。 The present invention provides a processing apparatus for processing a substrate with a processing liquid,
Transport means for transporting the substrate in a predetermined direction;
A nozzle body having a slit-like nozzle that is disposed above the substrate transported by the transport means and that supplies the processing liquid over substantially the entire length in the width direction of the substrate;
When supplying the processing liquid from the nozzle body to the front end portion and the rear end portion in the transport direction of the substrate transported by the transport means, the processing liquid is supplied to other portions except the front end portion and the rear end portion. A control means for slowing down the transport speed of the substrate as compared to the case,
The tip of the nozzle body, a plurality of preventing the processing liquid from the nozzle by sucking the processing liquid remaining in the said nozzle when finished supplying the processing liquid to the rear end of the substrate is added dropwise The substrate processing apparatus is characterized in that the suction holes are provided at predetermined intervals in the longitudinal direction with one end communicating with the nozzle .

この発明によれば、基板の搬送方向前端部と後端部とに処理液を供給するとき、他の部分に処理液を供給するときよりも基板の搬送速度を遅くするため、基板の前端部と後端部とのエッジで処理液が跳ね難くなるから、基板の全体にわたって処理液による処理を均一に行なうことが可能となる。   According to the present invention, when supplying the processing liquid to the front end portion and the rear end portion in the substrate transport direction, the substrate transport speed is slower than when supplying the processing liquid to other portions. Since it becomes difficult for the processing liquid to splash at the edge with the rear end portion, the processing with the processing liquid can be performed uniformly over the entire substrate.

以下、この発明の一実施の形態を図面を参照して説明する。   An embodiment of the present invention will be described below with reference to the drawings.

図1はこの発明の処理装置を示し、この処理装置は基板Ｗを処理液としての現像液によって処理するためのものである。この処理装置は本体１を備えている。この本体１内は仕切り板２によって処理チャンバ３ａと洗浄・乾燥チャンバ３ｂとに区画されている。   FIG. 1 shows a processing apparatus of the present invention, which is for processing a substrate W with a developing solution as a processing solution. This processing apparatus includes a main body 1. The inside of the main body 1 is partitioned by a partition plate 2 into a processing chamber 3a and a cleaning / drying chamber 3b.

本体１の一端面には搬入口４ａが形成され、他端面には搬出口４ｂ形成されている。また、仕切り板２には連通口４ｃが上記搬入口４ａ及び搬出口４ｂと同じレベルで形成されている。搬入口４ａ，搬出口４及び連通口４ｃはそれぞれシャッタ５によって開閉されるようになっている。   A carry-in port 4a is formed on one end surface of the main body 1, and a carry-out port 4b is formed on the other end surface. The partition plate 2 has a communication port 4c formed at the same level as the carry-in port 4a and the carry-out port 4b. The carry-in port 4a, the carry-out port 4 and the communication port 4c are each opened and closed by a shutter 5.

各チャンバ３ａ，３ｂ内にはそれぞれ複数の搬送ローラ６が所定間隔で軸線を平行にし、かつ同じレベルで配設されている。各チャンバ３ａ，３ｂに設けられた複数の搬送ローラ６は、それぞれ第１、第２の駆動源７，８によって別々に回転駆動されるようになっている。各駆動源７，８は制御装置１１によって駆動が制御される。つまり、それぞれのチャンバ３ａ，３ｂでの搬送ローラ６による基板Ｗの搬送速度を制御できるようになっている。   In each of the chambers 3a and 3b, a plurality of transport rollers 6 are arranged at the same level with their axes parallel to each other at a predetermined interval. The plurality of transport rollers 6 provided in the respective chambers 3a and 3b are individually driven to rotate by first and second drive sources 7 and 8, respectively. The driving of the driving sources 7 and 8 is controlled by the control device 11. That is, the transport speed of the substrate W by the transport roller 6 in each chamber 3a, 3b can be controlled.

なお、搬入口４ａの上流側及び搬出口４ｂの下流側にも、それぞれ複数の搬送ローラ（図示せず）が設けられており、それらの搬送ローラによって未処理の基板Ｗを処理チャンバ３ａに搬入し、洗浄・乾燥チャンバ３ｂで処理された基板Ｗを搬出するようになっている。   A plurality of transport rollers (not shown) are also provided on the upstream side of the carry-in port 4a and the downstream side of the carry-out port 4b, and the unprocessed substrate W is carried into the processing chamber 3a by these transport rollers. Then, the substrate W processed in the cleaning / drying chamber 3b is carried out.

上記処理チャンバ３ａの搬入口４ａ側には、搬送ローラ６によって搬送される基板Ｗの上方にノズル体１２が設けられている。このノズル体１２は基板Ｗの幅寸法よりもわずかに大きな幅寸法を有し、その長手方向を基板Ｗの搬送方向に交差させて配置されている。   A nozzle body 12 is provided above the substrate W transported by the transport roller 6 on the side of the transport inlet 4a of the processing chamber 3a. The nozzle body 12 has a width dimension slightly larger than the width dimension of the substrate W, and is arranged such that its longitudinal direction intersects the transport direction of the substrate W.

図２に示すように、上記ノズル体１２は２枚の板材１４，１５を対向させてなる。これら２枚の板材１４，１５の対向面間には導入路１６が形成されている。この導入路１６の上部には処理液としての現像液を供給する供給管１７が接続口体１７ａを介して続され、下部は導入路１６に比べて狭い対向間隔で形成されたスリット状のノズル１８の一端が連通している。このノズル１８の他端はノズル体１２の下端面に開口している。したがって、上記供給管１７から導入路１６に供給された現像液は上記ノズル１８の先端からカーテン状に流出して基板Ｗの上面に供給される。   As shown in FIG. 2, the nozzle body 12 has two plate members 14 and 15 facing each other. An introduction path 16 is formed between the opposing surfaces of the two plate members 14 and 15. A supply pipe 17 for supplying a developing solution as a processing solution is connected to the upper part of the introduction path 16 via a connection port body 17a, and the lower part is a slit-like nozzle formed at a narrower interval than the introduction path 16. One end of 18 communicates. The other end of the nozzle 18 opens at the lower end surface of the nozzle body 12. Accordingly, the developer supplied from the supply pipe 17 to the introduction path 16 flows out from the tip of the nozzle 18 in a curtain shape and is supplied to the upper surface of the substrate W.

一対の板材１４，１５は上端部が長手方向に所定間隔で設けられた複数の連結ねじ２１（１つのみ図示）によって連結固定され、下端部は同じく長手方向に所定間隔で設けられた複数の調整ねじ２２（１つのみ図示）が設けられている。各調整ねじ２２を捩じ込む方向に回転させると、上記ノズル１８の間隔を広くすることができ、緩める方向に回転させると、上記ノズル１８の間隔を狭くすることができる
つまり、調整ねじ２２によってノズル体１２の長手方向に沿うノズル１８の間隔が一定になるよう調整することができる。それによって、ノズル１８の長手方向全長から現像液をほぼ均一に流出させることができるようになっている。 The pair of plate members 14 and 15 are connected and fixed by a plurality of connecting screws 21 (only one is shown) whose upper end portions are provided at predetermined intervals in the longitudinal direction, and the lower end portions thereof are also plurally provided at predetermined intervals in the longitudinal direction. An adjusting screw 22 (only one is shown) is provided. When the adjustment screws 22 are rotated in the screwing direction, the interval between the nozzles 18 can be widened, and when the adjustment screws 22 are rotated in the loosening direction, the interval between the nozzles 18 can be reduced. The interval between the nozzles 18 along the longitudinal direction of the nozzle body 12 can be adjusted to be constant. As a result, the developer can flow out almost uniformly from the entire length of the nozzle 18 in the longitudinal direction.

ノズル体１２の先端部には、一端をノズル１８に連通させた複数の吸引孔２３（１つのみ図示）が長手方向に所定間隔で形成されている。各吸引孔２３の他端には吸引管２４が接続されている。この吸引管２４には吸引ポンプ２９が開閉制御弁（図示せず）を介して接続されている。開閉制御弁は上記制御装置１１によって開閉が制御される。つまり、基板Ｗに対する現像液の供給を停止したとき、上記開閉弁が開放される。それによって、吸引孔２３を介してノズル１８に吸引力が作用して、ノズル１８に残留する現像液が吸引され、滴下するのが阻止される。   A plurality of suction holes 23 (only one shown) having one end communicating with the nozzle 18 are formed at a predetermined interval in the front end portion of the nozzle body 12. A suction tube 24 is connected to the other end of each suction hole 23. A suction pump 29 is connected to the suction pipe 24 via an open / close control valve (not shown). The opening / closing control valve is controlled to open / close by the control device 11. That is, when the supply of the developing solution to the substrate W is stopped, the on-off valve is opened. Thereby, a suction force acts on the nozzle 18 through the suction hole 23, and the developer remaining in the nozzle 18 is sucked and prevented from dropping.

なお、処理チャンバ３ａ内には、ノズル体１２の近傍で基板Ｗの搬送方向上流側に、基板Ｗが搬入口４ａから搬入されてノズル体１２の上流側の所定の位置に到達したことを検知する第１のセンサ２５が設けられている。また、ノズル体１２の近傍で基板Ｗの搬送方向下流側には上記第１のセンサ２５と基板Ｗの搬送方向に沿って所定間隔で第２のセンサ２６が設けられている。   In the processing chamber 3a, it is detected that the substrate W has been loaded from the carry-in port 4a and has reached a predetermined position upstream of the nozzle body 12 upstream of the substrate body 12 in the vicinity of the nozzle body 12 in the transport direction. A first sensor 25 is provided. A second sensor 26 is provided at a predetermined interval along the transport direction of the substrate W in the vicinity of the nozzle body 12 on the downstream side in the transport direction of the substrate W.

基板Ｗの先端が処理チャンバ３ａ内の所定の位置まで搬送されてきたことが上記第１のセンサ２５によって検出されると、この検出信号によって現像液の供給が開始されるとともに、処理チャンバ１内における基板Ｗの搬送速度が後述するように減速制御される。   When the first sensor 25 detects that the tip of the substrate W has been transported to a predetermined position in the processing chamber 3a, supply of the developer is started by this detection signal, and the inside of the processing chamber 1 The conveyance speed of the substrate W in is controlled to be decelerated as will be described later.

基板Ｗが減速された状態で所定距離搬送され、その先端が第２のセンサ２６によって検出されると、その検出信号で基板Ｗの搬送速度が加速される。つぎに、第１のセンサ２５の下方を基板Ｗの後端が通過したことが検出されると、基板の搬送速度が再び減速される。そして、第１のセンサ２５が基板Ｗの後端を検出して所定時間経過し、その後端がノズル体１２の下方を通過した時点で、上記ノズル体１２への現像液の供給を停止する。このとき、上述したように開閉制御弁が開放され、吸引ポンプ２９の吸引力がノズル１８に作用するから、ノズル１８から現像液が処理チャンバ３ａ内に滴下するのが防止される。   When the substrate W is transported for a predetermined distance while being decelerated and the tip of the substrate W is detected by the second sensor 26, the transport speed of the substrate W is accelerated by the detection signal. Next, when it is detected that the rear end of the substrate W has passed under the first sensor 25, the substrate transport speed is reduced again. Then, when the first sensor 25 detects the rear end of the substrate W and a predetermined time elapses and the rear end passes below the nozzle body 12, the supply of the developing solution to the nozzle body 12 is stopped. At this time, as described above, the open / close control valve is opened, and the suction force of the suction pump 29 acts on the nozzle 18, so that the developer is prevented from dropping from the nozzle 18 into the processing chamber 3a.

その後、基板Ｗが図１に鎖線で示す位置まで搬送されると、第１の駆動源７による基板Ｗの搬送が停止され、上面に現像液が層状に供給された状態で処理チャンバ３内で所定時間待機させられる。なお、基板Ｗの搬送の停止は、ノズル体１２からの現像液の供給が停止されて所定時間経過した後に、制御装置１１から第１の駆動源７に停止信号が出力されることで行なわれる。なお、上記停止信号は第２のセンサ２６の検出信号に基いて出力するようにしてもよい。   Thereafter, when the substrate W is transported to the position indicated by the chain line in FIG. 1, the transport of the substrate W by the first drive source 7 is stopped, and the developer is supplied in layers in the processing chamber 3 with the upper surface supplied in layers. Wait for a predetermined time. The conveyance of the substrate W is stopped by outputting a stop signal from the control device 11 to the first drive source 7 after a predetermined time has elapsed since the supply of the developer from the nozzle body 12 was stopped. . The stop signal may be output based on the detection signal of the second sensor 26.

基板Ｗは、所定時間待機した後、速度Ｖ１ で洗浄・乾燥チャンバ３ｂに搬送される。洗浄・乾燥チャンバ３ｂには基板Ｗの洗浄液をシャワー状に供給する洗浄ノズル２７及び洗浄液によって洗浄された基板Ｗに圧縮気体を供給して基板Ｗに付着した洗浄液を除去するエアーナイフ２８が基板Ｗの搬送方向に沿って順次配置されている。 Substrate W, after waiting a predetermined time, is transported to the cleaning and drying chamber 3b at a speed V 1. In the cleaning / drying chamber 3b, a cleaning nozzle 27 for supplying a cleaning liquid for the substrate W in a shower form and an air knife 28 for supplying a compressed gas to the substrate W cleaned by the cleaning liquid to remove the cleaning liquid adhering to the substrate W are provided. Are sequentially arranged along the transport direction.

つぎに、上記構成の処理装置によって基板Ｗを現像処理する場合について説明する。未処理の基板Ｗが処理チャンバ３ａに図３にＶ１ で示す速度で搬入され、所定の位置に到達すると、その基板Ｗの先端が第１のセンサ２５によって検出される。その検出信号によって、ノズル体１２に現像液が供給されると同時に、制御装置１１は第１の駆動源７を制御し、基板Ｗの搬送速度をＶ１ で示す速度からＶ２ で示す速度に減速する。それによって、速度Ｖ２ で搬送される基板Ｗの先端部にノズル体１２のスリット状のノズル１８から現像液が供給される。 Next, a case where the substrate W is developed by the processing apparatus having the above configuration will be described. Is carried in the unprocessed substrate W processing chamber 3a at a speed indicated by V 1 in FIG. 3, upon reaching a predetermined position, the tip of the substrate W is detected by the first sensor 25. At the same time as the developer is supplied to the nozzle body 12 by the detection signal, the control device 11 controls the first drive source 7 so that the transport speed of the substrate W is changed from the speed indicated by V 1 to the speed indicated by V 2. Slow down. Thereby, the developing solution is supplied to the tip portion of the substrate W transported at a speed V 2 from the slit-shaped nozzles 18 of the nozzle body 12.

基板Ｗの先端部に現像液が供給される際、基板Ｗの搬送速度をＶ２ に減速することで、基板Ｗの先端のエッジになどに衝突した現像液が強く跳ね返るのが防止されるから、基板Ｗの他の部分に再付着するのが防止される。そのため、現像液の跳ね返りによって基板Ｗに対する現像作用が不均一になるのが防止される。 When the developer is supplied to the front end of the substrate W, the transport speed of the substrate W is reduced to V 2 , so that the developer that has collided with the edge of the front end of the substrate W and the like is prevented from splashing strongly. , Reattachment to other parts of the substrate W is prevented. Therefore, it is possible to prevent the developing action on the substrate W from becoming non-uniform due to the splashing of the developing solution.

上記基板Ｗの先端部への現像液の供給が終了した時点、つまり第２のセンサ２６が基板Ｗの先端を検出すると、その検出信号によって第１の駆動源７が基板Ｗの搬送速度を図３にＶ１ で示す速度に加速する。 When the supply of the developer to the front end portion of the substrate W is completed, that is, when the second sensor 26 detects the front end of the substrate W, the first drive source 7 indicates the transport speed of the substrate W by the detection signal. accelerating the speed indicated by V 1 to 3.

加速された基板Ｗが搬送され、その後端が第１のセンサ２５によって検出されると、その検出信号によって基板Ｗの搬送速度が再びＶ２ に減速される。つまり、第１のセンサ２５によって基板Ｗの後端が検出された時点では基板Ｗの後端部に現像液が供給されていない状態であるから、基板Ｗの後端部には基板Ｗが減速された状態で現像液が供給されることになる。 Accelerated substrate W is conveyed, the rear end thereof is detected by the first sensor 25, the conveying speed of the substrate W by the detection signal is reduced to V 2 again. That is, when the rear end of the substrate W is detected by the first sensor 25, the developing solution is not supplied to the rear end portion of the substrate W, so that the substrate W is decelerated at the rear end portion of the substrate W. In this state, the developer is supplied.

したがって、基板Ｗの後端部に供給される現像液が後端のエッジなどで跳ねて基板Ｗの他の部分に付着することがないから、そのことによって基板Ｗの先端部と同様、基板Ｗに対する現像作用が不均一になるのが防止される。   Therefore, the developer supplied to the rear end portion of the substrate W does not jump at the edge of the rear end and adheres to other portions of the substrate W. Thus, like the front end portion of the substrate W, the substrate W It is possible to prevent the developing action from becoming uneven.

基板Ｗの先端部と後端部とを除く部分、つまり中途部に対して現像液を供給する場合には、基板Ｗの搬送速度をＶ１ に加速しているから、基板Ｗを終始搬送速度Ｖ２ で搬送しながら現像液を供給する場合に比べ、基板Ｗ全体に現像液を供給する時間を短縮することができる。 Portion excluding the front end portion and the rear end portion of the substrate W, that is, when supplying the developing liquid to the middle portion, since the transport speed of the substrate W has accelerated to V 1, throughout the conveying speed of the substrate W Compared with the case where the developer is supplied while being conveyed by V 2 , the time for supplying the developer to the entire substrate W can be shortened.

基板Ｗを速度Ｖ２ で搬送しながら後端部へ現像液を供給し、第１のセンサ２５が基板Ｗの後端を検出してその後端がノズル体１２の下方を通過する時点で、ノズル体１２への現像液の供給が停止するとともに、ノズル１８に吸引力が作用し、現像液がノズル１８から基板Ｗ以外の箇所に滴下するのが防止される。 At the time when the first sensor 25 detects the rear end of the substrate W and the rear end passes below the nozzle body 12 while supplying the developer to the rear end while conveying the substrate W at the speed V 2 , the nozzle While the supply of the developer to the body 12 is stopped, a suction force acts on the nozzle 18, and the developer is prevented from dropping from the nozzle 18 to a place other than the substrate W.

また、基板Ｗ波所定位置まで搬送され、処理チャンバ３ａ内の図１に鎖線で示す位置で所定時間放置される。それによって、基板Ｗの上面全体に現像液による現像作用が進行する。   Further, the substrate W wave is transported to a predetermined position and left at a position indicated by a chain line in FIG. As a result, the developing action by the developer proceeds on the entire upper surface of the substrate W.

所定時間経過後、第１の駆動源７と第２の駆動源８とが作動して基板Ｗを処理チャンバ３ａから洗浄・乾燥チャンバ３ｂへ速度Ｖ１ で搬送する。この洗浄・嵌挿チャンバ３ｂでは、基板Ｗに洗浄液が供給され、基板Ｗの現像液が洗浄除去され、ついでエアーナイフ２８から圧縮空気が供給されることで、基板Ｗの板面に付着した洗浄液が除去される。そして、基板Ｗは搬出口４ｂから搬出されることになる。 After a predetermined time, to transport a first driving source 7 and the second drive source 8 and the operating speed V 1 of the substrate W from the processing chamber 3a to the cleaning and drying chamber 3b. In the cleaning / insertion chamber 3b, the cleaning liquid is supplied to the substrate W, the developer on the substrate W is cleaned and removed, and then the compressed air is supplied from the air knife 28, so that the cleaning liquid attached to the plate surface of the substrate W is removed. Is removed. Then, the substrate W is carried out from the carry-out port 4b.

このように、ノズル体１２によって基板Ｗに現像液を供給する際、基板Ｗの搬送方向先端部と後端部に現像液を供給するとき、その先端部と後端部とを除く中途部に現像液を供給するときよりも基板Ｗの搬送速度を遅くした。そのため、基板Ｗの先端や後端のエッジで現像液が強く跳ね返り、その現像液が基板Ｗの他の部分に再付着するのを防止できるから、現像液の跳ね返りにより、基板Ｗの現像処理が不均一になるのを防止することができる。   Thus, when supplying the developing solution to the substrate W by the nozzle body 12, when supplying the developing solution to the front end portion and the rear end portion in the transport direction of the substrate W, in the middle portion excluding the front end portion and the rear end portion. The conveyance speed of the substrate W was made slower than when supplying the developer. Therefore, it is possible to prevent the developer from splashing strongly at the leading edge and the trailing edge of the substrate W and preventing the developer from re-adhering to other portions of the substrate W. It is possible to prevent non-uniformity.

この発明は上記一実施の形態に限定されるものでなく、たとえば処理液としては現像液に限られず、エッチング液や剥離液などであっても、この発明を適用することができる。   The present invention is not limited to the above-described embodiment. For example, the processing solution is not limited to the developer, and the present invention can be applied to an etching solution or a stripping solution.

この発明の一実施の形態を示す処理装置の概略的構成図。BRIEF DESCRIPTION OF THE DRAWINGS The schematic block diagram of the processing apparatus which shows one embodiment of this invention. ノズル体の拡大断面図。The expanded sectional view of a nozzle body. 基板に対する現像液の供給位置との搬送速度との関係を示す説明図。Explanatory drawing which shows the relationship with the conveyance speed with the supply position of the developing solution with respect to a board | substrate.

符号の説明Explanation of symbols

６…搬送ローラ（搬送手段）、７…第１の駆動源、８…第２の駆動源、１１…制御装置（制御手段）、１２…ノズル体、１８…ノズル、２３…吸引孔、２５…第１のセンサ（制御手段）、２６…第２のセンサ（制御手段）。   DESCRIPTION OF SYMBOLS 6 ... Conveyance roller (conveyance means), 7 ... 1st drive source, 8 ... 2nd drive source, 11 ... Control apparatus (control means), 12 ... Nozzle body, 18 ... Nozzle, 23 ... Suction hole, 25 ... 1st sensor (control means), 26 ... 2nd sensor (control means).

Claims (1)

基板を処理液によって処理する処理装置において、
上記基板を所定方向に搬送する搬送手段と、
この搬送手段によって搬送される上記基板の上方に配置され基板の幅方向ほぼ全長にわたって上記処理液を供給するスリット状のノズルを有するノズル体と、
上記搬送手段によって搬送される上記基板の搬送方向の前端部と後端部とに上記ノズル体から処理液を供給するとき、上記前端部と後端部を除く他の部分に処理液を供給するときに比べて上記基板の搬送速度を遅くする制御手段を具備し、
上記ノズル体の先端部には、上記基板の後端部に処理液を供給し終えたときに上記ノズル内に残留する処理液を吸引してそのノズルから処理液が滴下するのを防止する複数の吸引孔が一端を上記ノズルに連通させて長手方向に所定間隔で設けられていることを特徴とする基板の処理装置。 In a processing apparatus for processing a substrate with a processing liquid,
Transport means for transporting the substrate in a predetermined direction;
A nozzle body having a slit-like nozzle that is disposed above the substrate transported by the transport means and that supplies the processing liquid over substantially the entire length in the width direction of the substrate;
When supplying the processing liquid from the nozzle body to the front end portion and the rear end portion in the transport direction of the substrate transported by the transport means, the processing liquid is supplied to other portions except the front end portion and the rear end portion. A control means for slowing down the transport speed of the substrate as compared to the case,
The tip of the nozzle body, a plurality of preventing the processing liquid from the nozzle by sucking the processing liquid remaining in the said nozzle when finished supplying the processing liquid to the rear end of the substrate is added dropwise The substrate processing apparatus is characterized in that the suction holes are provided at predetermined intervals in the longitudinal direction with one end communicating with the nozzle .
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