TWI355677B - Apparatus for treating substrates by process liqui - Google Patents

Apparatus for treating substrates by process liqui Download PDF

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TWI355677B
TWI355677B TW093138561A TW93138561A TWI355677B TW I355677 B TWI355677 B TW I355677B TW 093138561 A TW093138561 A TW 093138561A TW 93138561 A TW93138561 A TW 93138561A TW I355677 B TWI355677 B TW I355677B
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substrate
liquid
processing
end portion
nozzle
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TW093138561A
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Chinese (zh)
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TW200527484A (en
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Yukinobu Nishibe
Akinori Iso
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Shibaura Mechatronics Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67745Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B65CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65GTRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G49/00Conveying systems characterised by their application for specified purposes not otherwise provided for
    • B65G49/05Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles
    • B65G49/06Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for fragile sheets, e.g. glass
    • B65G49/063Transporting devices for sheet glass
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67276Production flow monitoring, e.g. for increasing throughput

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Automation & Control Theory (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Liquid Crystal (AREA)
  • Cleaning By Liquid Or Steam (AREA)

Description

九、發明說明: 【發明所屬之技術領域】 技術領域 本發明係有關於一種對基板供給處理液並進行處理之 處理裝置及處理方法。 背景技術 於液晶顯示裝置所使用之玻璃製基板上係形成電路圖 案,於基板形成電路圖案時係採用微影製程。如眾所週知, 微影製程係於前述基板上塗布抗蝕層,且透過業已形成電 路圖案之光罩,於該抗蝕層上照射光。 其次,除去抗蝕層未照射光之部分或業已照射光之部 刀且蝕刻基板業已除去抗蝕層之部分並於蝕刻後除去抗 餘層’藉由反覆複數次前述—連串之程序,於前述基板上 形成電路圖案。 此種微影製程中包括於前述基板上藉由顯像液、姓刻 ^或軸雜錢#層之_液等處理液來處理基板之程 更包括於利用處理液之處理後藉由洗淨液進行洗淨之 等且必須包括洗淨後除去附著殘留於基板上之洗淨 液之乾燥程序。 声 板進行利用顯像液、钱刻液或剝離液等處理液之 严里 已知的方式有:將前述基板浸潰於處理液以進行 , 次頃方式;及以裝滿處理液來供給至基板板面並進 行處理之攪煉方式。 利用攪煉方式時,由於可一面搬送基板一面進行處 理,且基板只要供給必要量之處理液即可,因此具有生產 性或經濟性高於浸潰方式之優點,著眼於該優點,因此目 前多採用攪煉方式。 以往利用攪煉方式將基板以處理液處理時,係藉由搬 送滾筒將基板搬入處理室内。若基板搬送至處理室内,則 會對藉由預定搬送速度搬送之基板,以設置於處理室内之 塗布喷嘴將處理液供給至基板之上面,藉此,於基板上面 會裝滿處理液且呈層;R,若於該狀態下放置預定時間,則 前述基板之板面可藉處理液進行處理。 發明所欲解決之課題 然而,自塗布喷嘴對搬入處理室内之基板供給處理液 時’於基板搬送方向之錢部與後端部有時會有處理液於 基板邊緣濺起讀形,特別是若為了提高處理效率而加快 基板之搬送速度,職傾向”得顯著,&,錢起之處 理液再度崎於基板之處會比其他地方更容易 進行基板之纽,結果,會產生無法於全體均—地處理基 板之問題。 $月係提供種可防止處理液於基板之搬送方向前 =部與後端部祕且可料體均—地處理基板之基板處理 裝置及處理方法。 【發S月内容】 發明之揭示 解決課題之手段 本發明係一種基板之處理裝置,其係藉由處理液來處 理基板之處理裝置,且包含有:搬送機構,係朝預定方向 搬送前述基板者;喷嘴體,係配置於藉由該搬送機構搬送 之前述基板之上方,且具有於前述基板之寬度方向大致全 長上供給前述處理液之狹縫狀喷嘴者;及控制機構,係於 自前述喷嘴體將前述處理液供給至藉由前述搬送機構搬送 之前述基板搬送方向之前端部與後端部時,相較於將該處 理液供給至前述前端部與後端部以外之其他部分時減緩前 述基板之搬送速度者。 本發明係一種基板之處理方法,其係藉由處理液來處 理基板之方法’且包含有:朝預定方向搬送前述基板之程 序;於所搬送之基板寬度方向全長上供給前述處理液之程 序’及於將刚述處理液供給至前述基板之搬送方向前端部 與後端部時,相較於將前述處理液供給至前述前端部與後 端部以外之其他部分時減緩前述基板之搬送速度之程序。 發明之效果 若藉由本發明’則由於在將處理液供給至基板之搬送 方向刚端部與後端部時相較於將處理液供給至其他部分時 減緩基板之搬送速度’因此處理液不易於基板之前端部與 後端部之邊緣職起’故可於基板全體上均-地進行利用處 理液之處理。 C 3¾1- 發明之較佳實施形態 以下參照圖式說明本發明之一實施形態。 第1圖係顯示本發明之處理裝置,且該處理裝置藉由作 為處理液之顯像液來處理基㈣。該處理裝置具有本體1, 且該本體1内II由分隔板2區分為處理室以與洗淨乾燥室 3b。 於本體1之一端面形成搬入口 4a,且於另-端面形成搬 出口 4b。又,於分隔板2上,以與前述搬入口 4a及搬出口 4b 相同水平之狀態下形成連通口牝,且搬入口 4a、搬出口仆 及連通口 4c分別藉由閘板5來開關。 於各室3a、3b内,在以預定間隔構成軸線平行且相同 水平之狀態下分別配置有複數搬送滚筒6。設置於各室3a、 3b内之複數搬送滾筒6係分別藉由第J、第2驅動源7、8來分 別旋轉驅動。各驅動源7、8係藉由控制裝置丨丨來控制驅動, 即,構成為可控制藉由於室3a、3b内之各搬送滾筒6搬送之 基板W之搬送速度。 另,於搬入口 4a之上游側及搬出口 4b之下游側亦分別 設置有複數搬送滾筒(未圖示),且藉由該等搬送滾筒將未處 理之基板W搬入處理室3a内並將業已於洗淨.乾燥室3b内 進行處理之基板W搬出。 於前述處理室3a之搬入口4a側,在藉由搬送滾筒6搬送 之基板W上方設置有喷嘴體12。該喷嘴體π之寬度尺寸稍 微大於基板W之寬度尺寸,且配置為其長向與基板w之搬 送方向交又。 如第2圖所示,前述噴嘴體12係使2片板材14、15相對。 於前述2片板材14、15之相對面間形成導入路16 ^該導入路 6之上孩透過連接σ體^與供給作為處理液之顯像液 之供給管17連接,下㈣與以窄於導人路16之㈣間隔形 成之狹縫狀喷嘴I8之—端連通^料嘴18之3 —端係朝喷 嘴體12之下端面開口,因此,自前述供給管17供給至導入 路16之顯像液自前述噴嘴18之前端呈簾狀地流出並供給至 基板W之上面。 對板材14、15之上端部係藉由於長向以預定間隔設 置之複數連結螺絲21(僅圖示1個)連結固定,下端部則設置 有同樣地於長向以預定間隔設置之複數調整螺絲22(僅圖 示1個)。若使各調整螺絲22朝轉入方向旋轉,則可增加前 述喷嘴18之間隔,若朝拔出方向旋轉,則可縮小前述喷嘴 18之間隔。 即,藉由調整螺絲22,可使沿著喷嘴體12長向之喷嘴 18間隔調整為固定,藉此,可自喷嘴18之長向全長使顯像 液以大致均一之流量流出。 於喷嘴體12之前端部上,使一端與喷嘴18連通之複數 吸引孔23(僅圖示1個)於長向以預定間隔形成。各吸引孔23 之另一端係與吸引管24連接,該吸引管24透過開關控制閥 (未圖示)與吸引泵29連接,且開關控制閥係藉由前述控制裝 置11來控制開關。即,停止對基板W供給顯像液時,前述 開關閥開放,藉此,吸引力會透過吸引孔23作用於喷嘴18, 且吸引殘留於喷嘴18之顯像液並阻止其滴下。藉由前述吸 引孔23與前述吸引泵29,構成本發明之吸引機構。 前述處理室3a内,於喷嘴體12附近在基板W之搬送方 1355677 向上游側設置有可檢測出基板W自搬入口 4a搬入且到達噴 嘴體12上游側之預定位置之第丨感測器25。又,於喷嘴體12 附近,在基板W之搬送方向下游側,沿著前述第1感測器25 與基板W之搬送方向以預定間隔設置有第2感測器26。 5 若藉由前述第1感測器檢測出基板W之前端搬送至處 理室3a内之預定位置,則依據該檢測信號開始供給顯像 液’同時如後所述,處理室3a内之基板W之搬送速度進行 減速控制。 若基板W於業已減速之狀態下搬送預定距離且藉由第 10 2感測器檢測出其前端,則依據該檢測信號加快基板w之搬 送迷度,接著,若檢測出基板W之後端業已通過第1感測器 25之下方,則再度減慢基板之搬送速度。又,於第1感測器 25檢測出基板w之後端且經過預定時間,同時其後端業已 通過嘴嘴體12之下方時,停止對前述喷嘴體12供給顯像 15 液。此時,如前所述,開關控制閥開放且吸引泵29之吸弓丨 力透過吸引孔23作用於喷嘴18,因此可防止顯像液自噴嘴 18滴入處理室3a内。 然後’若基板W搬送至第1圖中以鏈線表示之位置,則 停止藉由第1驅動源7之基板w之搬送,且該基板W於顯像 20 液呈層狀供給至上面之狀態下於處理室3a内待命預定時 間。 另’基板W搬送之停止係於停止來自喷嘴體12之顯像 液供給且經過預定時間後,藉由自控制裝置U對第1驅動源 7輪出停止信號來進行。前述停止信號亦可依據第2感測器 10 1355677 26之檢測信號來輸出。 基板W係於處理室3a内待命預定時間後,以速度Vi搬 送至洗淨.乾燥室3b。於洗淨.乾燥室3b内,沿著基板W 之搬送方向依序地配置有呈嗔麗狀供給基板W之洗淨液之 5洗淨喷嘴27,及將壓縮氣體供給至業已藉洗淨液洗淨之基 板W以除去附著於基板w之洗淨液之氣刀28。另,氣刀28 係傾斜配置為朝基板W之搬送方向上游側喷射壓縮氣體。 其次’說明藉由前述構造之處理裝置來顯像處理基板 W之情形。若未處理之基板W藉由第3圖中以V〗表示之速度 10搬入處理室3a且到達預定位置’則可藉由第1感測器25檢測 出該基板W之前端。依據該檢測信號’於喷嘴體12供給顯 像液’同時控制裝置11控制第1驅動源7,且將基板w之搬 送速度自以V丨表示之速度減速至以V2表示之速度。藉此, 自喷嘴體12之狹縫狀喷嘴18將顯像液供給至以速度v2搬送 15 之基板W之前端部。 於基板W之前端部供給顯像液時,藉由將基板w之搬 送速度減速為v2,可防止與基板w前端之邊緣等碰撞之顯 像液劇烈飛濺之情形,因此可防止顯像液附著於基板w之 前端部以外之其他部分,故,可防止因顯像液之飛濺所造 20 成對基板W之顯像作用不均一之情形。 結束對前述基板W之前端部供給顯像液時,即,若第2 感測器26檢測出基板W之前端’則第1驅動源7依據該檢測 信號將基板W之搬送速度加速為第3圖中以\^丨表示之速度。 若搬送業已加速之基板W且藉由第1感測器25檢測出 11 1355677 其後端,則基板w之搬送速度會依據該檢測信號再度減速 為V2。在藉由第1感測器25檢測出基板W之後端時基板W之 後端並未到達喷嘴18之下方,然而,在基板w之搬送速度 因來自第1感測器25之檢測信號而減速為γ2時基板W之後 5端到達喷嘴18之下方。即,顯像液於基板W減速為V2之狀 態下供給至基板W之後端部。 故,由於供給至基板W後端部之顯像液不會在後端之 邊緣等濺起且附著於基板W之其他部分,因此,與基板w 之前端部相同,可防止對基板W之顯像作用不均一之情形。 10 於基板W之前端部與後端部以外之部分,即,於中間 部供給顯像液時,由於將基板W之搬送速度加速為Vi,因 此’相較於始終低速之一面以搬送速度v2搬送基板w—面 供給顯像液之情形’可縮短用以於基板W全體供給顯像液 所需之時間。 15 —面以速度V2搬送基板W—面對後端部供給顯像液, 且第1感測器25檢測出基板W之後端,並自該檢測經過預定 時間後,在基板W之後端業已通過噴嘴體12之下方時停止 對喷嘴體12供給顯像液,在此同時,使吸引力作用於喷嘴 18,藉此,可防止顯像液自喷嘴18滴落至基板W以外之地 20 方。 即,若第1感測器25檢測出基板W之後端且該檢測信號 輸入至控制裝置11,則可依照基板W之搬送速度算出基板 W後端至通過喷嘴體12下方為止之時間,因此,可於基板 W之後端業已通過喷嘴體12下方時停止對喷嘴體12供給顯 12 1355677 像液。 又,使基板W搬送至預定位置,且於處理室3a内之第j 圖中以鏈線表示之位置放置預定時間,藉此,可使利用顯 像液之顯像作用均一地於基板W之上面全體進行。 5 經過預定時間後,第1驅動源7與第2驅動源8作動且自 處理室3a將基板W以速度V!搬送至洗淨·乾燥室3b。於該 洗淨.乾燥室3b中,在基板W上供給洗淨液且洗淨除去基 板W之顯像液,接著,自氣刀28供給壓縮空氣,藉此,除 去附著於基板W板面之洗淨液。又,基板w會自搬出口4b !〇 搬出。 依此,藉由喷嘴體12將顯像液供給至基板评之搬送方 向前端部與後端部時,相較於將顯像液供給至其前端部與 後端部以外之中間部時係減緩基板w之搬送迷度。 1 故,由於可防止顯像液於基板W之前端或後端邊緣劇 15烈地飛濺且該顯像液再度附著於基板W之前端部與後端部 M外之其他部分,因此可防止因顯像液之飛職所造成之基 板w顯像處理不均一之情形。 、、本發明並不限於前述一實施形態’舉例言之,處理液 扣並不限於顯像液’钮刻液或剝離液等亦可適用本發明。 I圖式簡單說明】 第1圖係顯示本發明一實施形態之處理裝置之概觀構 造圖。 第2圖係喷嘴體之放大截面圖。 第3圖係顯示對基板之顯像液供給位置與搬送速度間 13 1355677 之關係之說明圖。 【主要元件符號說明】 1.. .本體 2.. .分隔板 3a...處理室 3b...洗淨.乾燥室 4a...搬入口 4b...搬出口 4c...連通口 5.. .閘板 6··.搬送滚筒(搬送機構) 7.. .第1驅動源 8.. .第2驅動源 11···控制裝置(控制機構) 12.. .喷嘴體 14,15…板材 16.. .導入路 17.. .供給管 17a...連接口體 18.. .喷嘴 21.. .連結螺絲 22.. .調整螺絲 23.. .吸引孔 24.. .吸引管 25.. .第1感測器(控制機構) 26.. .第2感測器(控制機構) 27.. .洗淨噴嘴 28··.氣刀 29.. .吸引泵 W...基板 14[Technical Field] The present invention relates to a processing apparatus and a processing method for supplying and processing a processing liquid to a substrate. Background Art A circuit pattern is formed on a glass substrate used in a liquid crystal display device, and a lithography process is employed in forming a circuit pattern on a substrate. As is well known, the lithography process applies a resist layer on the substrate and passes through a mask that has formed a circuit pattern, and the light is irradiated onto the resist layer. Secondly, removing the portion of the resist that has not been irradiated with light or the portion of the etched light and etching the portion of the substrate from which the resist has been removed and removing the anti-residue layer after etching is repeated by repeating the above-mentioned series of procedures. A circuit pattern is formed on the substrate. In the lithography process, the process of processing the substrate by using a processing liquid such as a developing solution, a surname, or a shaft of a liquid, or the like, is included in the lithography process, and is further included in the process by the treatment liquid. The liquid is washed and the like, and it is necessary to include a drying procedure for removing the cleaning liquid adhering to the substrate after washing. The sound plate is subjected to a treatment liquid such as a developing solution, a money engraving liquid or a peeling liquid, and is known in the following manner: the substrate is immersed in the treatment liquid to be performed, and the treatment liquid is supplied to the processing liquid. The smelting method of the substrate surface and processing. When the smelting method is used, it is possible to carry out the processing while transporting the substrate, and the substrate can be supplied with a necessary amount of the treatment liquid. Therefore, the productivity or economy is higher than that of the immersion method, and the advantage is pointed out. Use the smelting method. When the substrate is treated with a treatment liquid by a smelting method, the substrate is carried into the processing chamber by a transfer roller. When the substrate is transported into the processing chamber, the substrate conveyed by the predetermined transport speed is supplied to the upper surface of the substrate by the coating nozzle provided in the processing chamber, whereby the processing liquid is filled on the substrate and layered. ;R, if placed in this state for a predetermined time, the surface of the substrate can be processed by the treatment liquid. In order to solve the problem of the invention, when the processing nozzle supplies the processing liquid to the substrate in the processing chamber, the processing liquid may be splashed and read at the edge of the substrate in the substrate transporting direction and the rear end portion, in particular, In order to increase the processing efficiency and speed up the transfer speed of the substrate, the job tendency is remarkable. & The treatment liquid of Qianqi is more likely to be on the substrate again than other places, and as a result, it is impossible to - The problem of processing the substrate. The system provides a substrate processing device and a processing method for preventing the processing liquid from being processed in the direction of the substrate before the transfer direction of the substrate and the back end portion. The present invention relates to a processing apparatus for a substrate, which is a processing apparatus for processing a substrate by a processing liquid, and includes: a transport mechanism that transports the substrate in a predetermined direction; and a nozzle body; Provided above the substrate conveyed by the transfer mechanism, and having the processing liquid supplied to substantially the entire length of the substrate in the width direction And a control means for supplying the processing liquid to the front end portion and the rear end portion in the substrate transfer direction by the nozzle body when the processing liquid is supplied from the nozzle body The method of processing the substrate, which is a method of processing the substrate by the processing liquid, and includes: transporting in a predetermined direction, to a portion other than the front end portion and the rear end portion The procedure of the substrate; the process of supplying the processing liquid over the entire length of the substrate in the width direction of the substrate; and the supply of the processing liquid to the front end portion and the rear end portion of the substrate in the transport direction The procedure for slowing down the transport speed of the substrate when supplied to the other portions than the front end portion and the rear end portion. The effect of the invention is as follows: the end portion and the rear end portion of the transport direction in which the processing liquid is supplied to the substrate The time is slower than the transfer speed of the substrate when the processing liquid is supplied to other portions. Therefore, the processing liquid is not easy for the front end and the rear end of the substrate. The processing of the processing liquid can be performed on the entire substrate. C 33⁄41 - BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, an embodiment of the present invention will be described with reference to the drawings. Fig. 1 shows the present invention. a processing device, wherein the processing device processes the substrate (4) by using a developing liquid as a processing liquid. The processing device has a body 1, and the inner portion II of the body 1 is divided into a processing chamber by a partitioning plate 2 to be cleaned and dried. 3b. The inlet 4a is formed in one end surface of the main body 1, and the outlet 4b is formed in the other end surface. Further, the partition plate 2 is formed in the same level as the inlet 4a and the outlet 4b.搬, and the transfer port 4a, the port keeper, and the communication port 4c are respectively opened and closed by the shutter 5. In each of the chambers 3a and 3b, a plurality of transport rollers are disposed in a state in which the axes are parallel and at the same level at predetermined intervals. 6. The plurality of transport rollers 6 provided in the respective chambers 3a, 3b are respectively rotationally driven by the Jth and second drive sources 7, 8. Each of the drive sources 7 and 8 is controlled to be driven by the control unit ,, i.e., configured to control the transport speed of the substrate W transported by the transport rollers 6 in the chambers 3a and 3b. Further, a plurality of transport rollers (not shown) are provided on the upstream side of the carry-in port 4a and the downstream side of the transfer port 4b, respectively, and the unprocessed substrate W is carried into the processing chamber 3a by the transfer rollers. The substrate W processed in the cleaning and drying chamber 3b is carried out. On the side of the inlet 4a of the processing chamber 3a, a nozzle body 12 is provided above the substrate W conveyed by the transfer drum 6. The width of the nozzle body π is slightly larger than the width dimension of the substrate W, and is disposed such that its long direction intersects with the transport direction of the substrate w. As shown in Fig. 2, the nozzle body 12 faces the two sheets 14 and 15 together. An introduction path 16 is formed between the opposite faces of the two sheets 14 and 15 . The introduction path 6 is connected to the supply tube 17 which supplies the developing liquid as the treatment liquid through the connection σ body, and the lower (4) is narrower than The fourth end of the slit-shaped nozzle I8 formed at intervals of the guide path 16 is opened to the lower end surface of the nozzle body 12, and therefore, is supplied from the supply pipe 17 to the introduction path 16 The image liquid flows out from the front end of the nozzle 18 in a curtain shape and is supplied onto the upper surface of the substrate W. The upper end portions of the plate members 14 and 15 are connected and fixed by a plurality of connecting screws 21 (only one shown) which are disposed at predetermined intervals in the longitudinal direction, and the lower end portion is provided with a plurality of adjusting screws which are also disposed at predetermined intervals in the longitudinal direction. 22 (only one is shown). When the adjusting screws 22 are rotated in the turning direction, the interval between the nozzles 18 can be increased, and when the adjusting screws 22 are rotated in the pulling-out direction, the interval between the nozzles 18 can be reduced. That is, by adjusting the screw 22, the nozzles 18 extending along the longitudinal direction of the nozzle body 12 can be adjusted to be fixed, whereby the developing liquid can flow out at a substantially uniform flow rate from the length of the nozzle 18 to the entire length. On the front end portion of the nozzle body 12, a plurality of suction holes 23 (only one shown) having one end communicating with the nozzle 18 are formed at predetermined intervals in the longitudinal direction. The other end of each of the suction holes 23 is connected to a suction pipe 24 which is connected to a suction pump 29 via a switch control valve (not shown), and the switch control valve controls the switch by the control device 11. In other words, when the supply of the developing liquid to the substrate W is stopped, the opening and closing valve is opened, whereby the suction force acts on the nozzle 18 through the suction hole 23, and the developing liquid remaining in the nozzle 18 is sucked and prevented from dripping. The suction mechanism of the present invention is constituted by the suction hole 23 and the suction pump 29. In the processing chamber 3a, a second sensor 25 that can detect that the substrate W is carried in from the loading inlet 4a and reaches a predetermined position on the upstream side of the nozzle body 12 is provided upstream of the nozzle body 12 in the vicinity of the nozzle body 12; . Further, in the vicinity of the nozzle body 12, the second sensor 26 is provided at a predetermined interval along the transport direction of the first sensor 25 and the substrate W on the downstream side in the transport direction of the substrate W. (5) When the first sensor detects that the front end of the substrate W is transported to a predetermined position in the processing chamber 3a, the supply of the developing liquid is started according to the detection signal, and the substrate W in the processing chamber 3a is described later. The transfer speed is decelerated. When the substrate W is transported by a predetermined distance in a state where the substrate W has been decelerated and the front end is detected by the 10th sensor, the transfer of the substrate w is accelerated according to the detection signal, and then, if the substrate W is detected, the end has passed. Below the first sensor 25, the substrate transport speed is again slowed down. Further, when the first sensor 25 detects the rear end of the substrate w and a predetermined time elapses while the rear end of the substrate w has passed below the nozzle body 12, the supply of the developing liquid 15 to the nozzle body 12 is stopped. At this time, as described above, the switch control valve is opened and the suction force of the suction pump 29 is applied to the nozzle 18 through the suction hole 23, so that the developer liquid can be prevented from dropping into the processing chamber 3a from the nozzle 18. Then, when the substrate W is transported to the position indicated by the chain line in Fig. 1, the substrate w is transported by the first drive source 7, and the substrate W is supplied to the upper surface of the developing solution 20 in a layered manner. Waiting for a predetermined time in the processing chamber 3a. Further, the stop of the substrate W transport is performed by stopping the supply of the developer liquid from the nozzle body 12 for a predetermined period of time, and then stopping the first drive source 7 from the control device U. The stop signal can also be output according to the detection signal of the second sensor 10 1355677 26 . The substrate W is placed in the processing chamber 3a for a predetermined period of time, and then transported to the cleaning and drying chamber 3b at a speed Vi. In the cleaning and drying chamber 3b, five cleaning nozzles 27 for supplying the cleaning liquid to the substrate W are sequentially arranged along the conveying direction of the substrate W, and the compressed gas is supplied to the already-washed liquid. The substrate W is washed to remove the air knife 28 adhering to the cleaning liquid of the substrate w. Further, the air knife 28 is disposed obliquely to inject compressed gas toward the upstream side in the conveying direction of the substrate W. Next, the case where the substrate W is processed by the processing device of the foregoing configuration will be described. When the unprocessed substrate W is carried into the processing chamber 3a at a speed 10 indicated by V in Fig. 3 and reaches a predetermined position, the front end of the substrate W can be detected by the first sensor 25. The control unit 11 controls the first driving source 7 based on the detection signal 'the supply of the developing liquid' to the nozzle body 12, and decelerates the conveying speed of the substrate w from the speed indicated by V 至 to the speed indicated by V2. Thereby, the slit liquid nozzle 18 of the nozzle body 12 supplies the developing liquid to the end portion of the substrate W before the conveyance 15 at the speed v2. When the developing liquid is supplied to the end portion of the substrate W, the transport speed of the substrate w is reduced to v2, thereby preventing the developer liquid colliding with the edge of the front end of the substrate w from splashing, thereby preventing the image liquid from adhering. Since the portion other than the end portion of the substrate w is formed, it is possible to prevent the imaging effect of the pair of substrates W caused by the splash of the developing liquid from being uneven. When the supply of the developing liquid to the end portion of the substrate W is completed, that is, when the second sensor 26 detects the front end of the substrate W, the first driving source 7 accelerates the transport speed of the substrate W to the third according to the detection signal. The speed in the figure is represented by \^丨. When the substrate W that has been accelerated is transported and the rear end of 11 1355677 is detected by the first sensor 25, the transport speed of the substrate w is again decelerated to V2 in accordance with the detection signal. When the end of the substrate W is detected by the first sensor 25, the rear end of the substrate W does not reach below the nozzle 18. However, the transport speed of the substrate w is decelerated by the detection signal from the first sensor 25 to At the γ2, the 5 ends of the substrate W reach below the nozzle 18. That is, the developing liquid is supplied to the rear end portion of the substrate W in a state where the substrate W is decelerated to V2. Therefore, since the developing liquid supplied to the rear end portion of the substrate W does not splash at the edge of the rear end or the like and adheres to other portions of the substrate W, the same as the front end portion of the substrate w, the display of the substrate W can be prevented. Like a situation where the effect is not uniform. 10. When the developing solution is supplied to the intermediate portion and the rear end portion of the substrate W, that is, when the developing liquid is supplied to the intermediate portion, the transfer speed v2 is made to be faster than one of the constant low speeds. In the case where the substrate w-side is supplied with the developing liquid, the time required for supplying the developing liquid to the entire substrate W can be shortened. 15 - The substrate W is transported at a speed V2 - the developing liquid is supplied to the rear end portion, and the first sensor 25 detects the rear end of the substrate W, and after a predetermined time elapses from the detection, the end of the substrate W has passed When the nozzle body 12 is positioned below the nozzle body 12, the supply of the developing liquid to the nozzle body 12 is stopped, and at the same time, the suction force is applied to the nozzle 18, whereby the developer liquid can be prevented from dripping from the nozzle 18 to the ground 20 other than the substrate W. In other words, when the first sensor 25 detects the rear end of the substrate W and the detection signal is input to the control device 11, the time from the rear end of the substrate W to the lower side of the nozzle body 12 can be calculated in accordance with the transport speed of the substrate W. The supply of 12 1355677 image liquid to the nozzle body 12 can be stopped when the rear end of the substrate W has passed under the nozzle body 12. Further, the substrate W is transported to a predetermined position, and is placed at a position indicated by a chain line in the j-th image in the processing chamber 3a for a predetermined time, whereby the developing effect by the developing liquid can be uniformly applied to the substrate W. The whole is carried out above. 5 After the predetermined time elapses, the first drive source 7 and the second drive source 8 are actuated, and the substrate W is transported from the processing chamber 3a to the cleaning and drying chamber 3b at the speed V!. In the cleaning and drying chamber 3b, the cleaning liquid is supplied onto the substrate W, and the developing liquid of the substrate W is washed and removed, and then compressed air is supplied from the air knife 28, thereby removing the surface of the substrate W. Washing solution. Further, the substrate w is carried out from the outlet 4b ! According to this, when the developing liquid is supplied to the front end portion and the rear end portion of the substrate in the conveying direction by the nozzle body 12, it is slowed down when the developing liquid is supplied to the intermediate portion other than the front end portion and the rear end portion thereof. The transport of the substrate w is lost. Therefore, since the developer liquid can be prevented from splashing on the front end or the rear end edge of the substrate W and the developing solution is again adhered to the other portions before the end portion and the rear end portion M of the substrate W, the prevention can be prevented. The substrate w imaging process caused by the flying solution of the imaging liquid is not uniform. Further, the present invention is not limited to the above-described embodiment. As an example, the treatment liquid buckle is not limited to the developer liquid, the button engraving liquid or the peeling liquid, and the like. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing the configuration of a processing apparatus according to an embodiment of the present invention. Figure 2 is an enlarged cross-sectional view of the nozzle body. Fig. 3 is an explanatory view showing the relationship between the supply position of the developing liquid of the substrate and the transport speed 13 1355677. [Description of main component symbols] 1.. Main body 2. Partition plate 3a...Processing chamber 3b...Washing. Drying chamber 4a...Transport 4b...Transport 4c...Connected Port 5... Gate 6··. Transport roller (transport mechanism) 7.. First drive source 8. Second drive source 11···Control device (control mechanism) 12.. Nozzle body 14 , 15 ... sheet 16 .. . introduction road 17 .. supply tube 17a ... connection body 18 .. . nozzle 21.. . connection screw 22 .. adjustment screw 23 .. . suction hole 24 .. . Suction tube 25... 1st sensor (control mechanism) 26.. 2nd sensor (control mechanism) 27.. Washing nozzle 28··. Air knife 29... Suction pump W.. .Substrate 14

Claims (1)

1355677 十、申請專利範圍: 1. 一種基板之處理裝置, 裝置,且包含有: 換 〜 曰修正替换頁 係藉由處理液錢理基板 搬送機構,係朝預定方向搬送前述基板者; 嘴嘴體,係配置於藉由該搬送機構搬送之前述基板 之上方,且具有於基板之寬度方向大致全長上供給前述 處理液之狹縫狀喷嘴者:及 10 控制機構’係於自前述噴嘴體將處理液供給至藉由 前述搬送機構搬送之前述基板之搬送方向之前端部與 後端。Ρ時彳目較於將處理液供給至前述前端部與後端部 以外之其他部分時減緩前述基板之搬送速度者, 前述處理裝置還包含有: 第1感測器,係於前述喷嘴體之附近,配置於前述 基板之搬送方向之上游側者;及 15 第2感測器,係於前述噴嘴體之附近,配置於前述 基板之搬送方向之下游側者, 20 又’於前述第1感測器檢測出基板之前端時使該基 板之搬送速度減慢,且於第2感測器檢測出基板之前端 時使基板之搬送速度加快,並且,於前述第1感測器檢 測出基板之後端時使基板之搬送速度再度減慢,且自該 檢測經過預定時間後停止對前述喷嘴體供給處理液。 2. —種基板之處理裝置,係藉由處理液來處理基板之處理 裝置,且包含有: 搬送機構,係朝預定方向搬送前述基板者; 15 丄1355677 X. Patent Application Range: 1. A processing device for a substrate, comprising: a change to a 曰 correction replacement page is a method for transporting the substrate in a predetermined direction by a processing liquid substrate transfer mechanism; a slit-shaped nozzle that is disposed above the substrate conveyed by the transport mechanism and that supplies the processing liquid over substantially the entire width direction of the substrate: and 10 control mechanisms are processed from the nozzle body The liquid is supplied to the front end and the rear end in the conveyance direction of the substrate conveyed by the conveyance mechanism. When the processing liquid is supplied to the other portions than the front end portion and the rear end portion, the transfer speed of the substrate is slowed down, and the processing device further includes: a first sensor attached to the nozzle body a second sensor disposed in the vicinity of the transport direction of the substrate; and a second sensor disposed in the vicinity of the nozzle body, disposed downstream of the substrate in the transport direction, and 20 in the first sense When the detector detects the front end of the substrate, the transport speed of the substrate is slowed down, and when the second sensor detects the front end of the substrate, the transport speed of the substrate is increased, and after the first sensor detects the substrate At the end, the conveyance speed of the substrate is again slowed down, and the supply of the treatment liquid to the nozzle body is stopped after a predetermined time elapses from the detection. 2. A substrate processing apparatus which is a processing apparatus for processing a substrate by a processing liquid, and includes: a conveying mechanism that conveys the substrate in a predetermined direction; 15 丄 93138561 ~~~ Llff 年 喷嘴體,係配置於藉由該搬送機構搬送之前述基板 之上方,且具有於基板之寬度方向大致全長上供给前述 處理液之狹縫狀喷嘴者;及 控制機構,係於自前述喷嘴體將處理液供給至藉由 5 前述搬送機構搬送之前述基板之搬送方向之前端部與 後端部時,相較於將處理液供給至前述前端部與後端部 以外之其他部分時減緩前述基板之搬送速度者, 於前述噴嘴體之狹縫狀喷嘴上設置有吸引機構,讀 吸引機構係於結束對前述基板之後端部供給處理液時 10 吸引殘留於前述喷嘴内之處理液,以防止處理液自該噴 嘴滴落。 3.如申請專利範圍第2項之基板之處理裝置,其中前述控 制機構包含有: 感測器,係檢測藉由前述搬送機構搬送之前述基板 15 相對於前述喷嘴體之位置者;及 控制裝置,係藉由來自該感測器之檢測信號,控制 利用前述搬送機構之前述基板之搬送速度者。 4_ 一種基板之處理方法,係藉由處理液來處理基板之方 法,且包含有: 20 朝預定方向搬送前述基板之程序; 於所搬送之基板之寬度方向全長上藉由狹縫狀嘴 嘴供給前述處理液之程序;及 於將前述處理液供給至前述基板之搬送方向前端 部與後端部時,相較於將處理液供給至前述前端部與後 16 1355677 第93138561號申請案 100年08月04日修正替換 ,〇〇年叫曰修正替換頁 端部以外之其他部分時減緩前述基板之搬送速度之程 序, 於結束對前述基板之後端部供給處理液時,吸引殘 留於前述喷嘴内之處理液,以防止處理液自該喷嘴滴落 5 之程序。 5.如申請專利範圍第4項之基板之處理方法,其中前述基 板搬送速度之控制係依據前述基板之搬送方向之前端 與後端之位置檢測來進行。 1793138561 ~~~ Llff year nozzle body is disposed above the substrate conveyed by the transfer mechanism, and has a slit-shaped nozzle for supplying the processing liquid over substantially the entire width direction of the substrate; and a control mechanism When the processing liquid is supplied from the nozzle body to the front end portion and the rear end portion in the transport direction of the substrate conveyed by the transport mechanism, the processing liquid is supplied to the front end portion and the rear end portion. In some cases, the transport speed of the substrate is slowed down, and a suction mechanism is provided in the slit nozzle of the nozzle body, and the read suction mechanism is configured to be sucked and left in the nozzle when the processing liquid is supplied to the end portion of the substrate. Liquid to prevent the treatment liquid from dripping from the nozzle. 3. The processing apparatus of the substrate of claim 2, wherein the control means includes: a sensor for detecting a position of the substrate 15 conveyed by the conveying mechanism with respect to the nozzle body; and a control device The person using the detection signal from the sensor controls the transport speed of the substrate using the transport mechanism. 4_ A method for processing a substrate, which is a method for processing a substrate by a processing liquid, comprising: a program for transporting the substrate in a predetermined direction; and supplying a slit-shaped nozzle over the entire width direction of the substrate to be transported The process of the treatment liquid; and when the treatment liquid is supplied to the front end portion and the rear end portion of the substrate in the transport direction, the application liquid is supplied to the front end portion and the rear 16 1355677 No. 93138561 application 100 years 08 On the 4th of the month, the procedure for correcting the transfer speed of the substrate when the other part than the end of the page is replaced is corrected. When the processing liquid is supplied to the end portion of the substrate, the suction remains in the nozzle. The process of treating the liquid to prevent the treatment liquid from dripping from the nozzle 5 . 5. The method of processing a substrate according to claim 4, wherein the controlling of the substrate transport speed is performed based on position detection of the front end and the rear end of the substrate in the transport direction. 17
TW093138561A 2003-12-17 2004-12-13 Apparatus for treating substrates by process liqui TWI355677B (en)

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