200527503 九、發明說明： 【發明所屬之技術領域】 本發明係有關於一種基板處理裝置，為在搬運半導體 圓、扁平面顯示器（FPD)用玻璃基板、光罩用玻璃基板、 刷基板等之基板時，對基板施加超音波·高壓噴射洗淨 理、水洗處理、氣刀乾燥處理、蝕刻處理、顯像處理、 離處理等之各種處理。 【先前技術】 在對半導體晶圓或 FPD用玻璃基板等之基板施加超 波·高壓喷射洗淨處理、水洗處理、蝕刻處理等之濕式 理之情況時，係使用具備有處理室之基板處理裝置，在 處理室之内部配置有超音波·高壓噴射洗淨裝置、水洗 置、蝕刻裝置等之處理工具。然後，利用滾筒式輸送器 之搬運機構搬運基板之同時，在處理室内對基板供給純 或蝕刻液等之藥液，對基板施加指定之處理。依此，基 在處理室内被搬運的同時，在處理室内接受濕式處理。 此，處理室在以平面角度觀之為等於或大於基板之大小 另外，提案有未具備處理室，而具備在基板搬運方向 尺寸小於基板之處理.工具的基板處理裝置。亦即，所提 之基板處理裝置，在一端形成具有用來導入處理液之導 口的導入道路，和在一端形成具有用來將濕式處理後之 式處理液排出到系外之排出口的排出通路，將導入通路 排出通路各在另一端交叉而形成交叉部，在其交叉部具 由設有朝向基板開口之開口部的喷嘴構成體所構成之處 312XP/發明說明書(補件)/94-04/93139789 晶 印 處 剝 音 處 該 裝 等 水 板 因 〇 之 案 入 濕 與 備 理 5 200527503 工具，該處理工具之在基板搬運方向之尺寸為小於基板（例 如，參照曰本平成1 0年專利申請公開第1 6 3 1 5 3號公報）。 【發明内容】 (發明所欲解決之問題） 具備有在内部配置處理工具的處理室之基板處理裝置 中，隨著基板尺寸之大型化，使處理室變大，而裝置全體 大型化。例如，在進行蝕刻處理之裝置中，需要在基板之 搬運方向連續設置蝕刻處理室、水洗處理室和乾燥處理 室，則裝置全體大型化，佔用清潔室内之空間變大，裝置 之製造成本亦增加。另外，亦有由於處理室變大而使藥液 或純水之使用量增大的問題。 另一方面，在未具備處理室、而具備有小於基板之處理 工具的基板處理裝置，雖在設置空間或製造成本方面為有 利，藥液或純水之使用量亦減少，但需要有防止藥液與純 水流出或飛散到排出通路外之手段或控制，則使裝置構造 或控制機構複雜化。尚且，亦有處理液之飛沫或蒸發氣體 從喷嘴構成體之開口部朝向周邊環境擴散之虞。 本發明乃為鑑於上述之問題而成者，其目的為提供一種 基板處理裝置，係具有在内部配置有處理工具之處理室構 造，同時可以使裝置小型化，亦可以使處理液之使用量減 少，另外，由於其為具備有處理室之構造，所以可容易地 防止處理液之流出或飛散，不會有處理液之飛沫或蒸發氣 體擴散到周邊環境之虞。 (解決問題之手段） 312XP/發明說明書(補件)/94-04/93139789 200527503 申請專利範圍第1項之發明為一種基板處理裝置，具備 有：具有基板入口和基板出口的密閉型之處理室；對配置在 該處理室内部之基板施加指定之處理的處理工具；使基板 對於該處理工具相對地移動的移動手段；其特徵為：使上述 處理室之寬度等於或大於基板之相對移動方向之正交方向 的尺寸，且使處理室之長度小於基板之相對移動方向的尺 寸，並使配置有上述處理工具之處理室和基板相對地移 動；為隔絕上述處理室之内部環境和外部環境，而在基板 之相對移動路徑之上方側空間和下方側空間分別具備了將 沖洗用氣體供給至上述處理室的氣體供給手段（沖洗用氣 體供給手段），及將沖洗用氣體自上述處理室排出的氣體排 出手段（排氣手段）。 申請專利範圍第2項之發明為一種基板處理裝置，具備 有：具有基板入口和基板出口的密閉型之處理室；對配置在 該處理室内部之基板施加指定之處理的處理工具，使基板 對於該處理工具相對地移動的移動手段；其特徵為：使上述 處理室之寬度等於或大於基板之相對移動方向之正交方向 的尺寸，且使處理室之長度小於基板之相對移動方向的尺 寸，並使配置有上述處理工具之處理室和基板相對地移 動；為隔絕上述處理室之内部環境和外部環境，而具備有 氣體供給手段，其構成包含有：上·下一對之入口側氣體吐 出手段，在上述處理室之基板入口 ，分別配置於包夾基板 之相對移動路徑之上方側和下方側，分別具有接近基板之 相對移動路徑之對向的氣體吐出口 ，從該氣體吐出口朝向 7 312XP/發明說明書(補件)/94-04/93139789 200527503 基板之相對移動路徑分別吐出氣幕用氣體；及上·下一對 之出口側氣體吐出手段，在上述處理室之基板出口 ，分別 配置於包夾基板之相對移動路徑之上方側和下方側，分別 具有接近基板之相對移動路徑之對向的氣體吐出口 ，從該 氣體吐出口朝向基板之相對移動路徑分別吐出氣幕用氣 體；並具備有氣體排出手段，其構成包含有：上·下一對之 入口側氣體吸入手段，在上述處理室之基板入口 ，分別配 置於包夾基板之相對移動路徑之上方側和下方側，分別具 有接近基板之相對移動路徑之對向的氣體吸入口 ，通過該 氣體吸入口分別吸入氣幕用氣體；和上·下一對之出口側 氣體吸入手段，在上述處理室之基板出口 ，分別配置於包 夾基板之相對移動路徑之上方側和下方側，分別具有接近 基板之相對移動路徑之對向的氣體吸入口 ，通過該氣體吸 入口分別吸入氣幕用氣體。 申請專利範圍第3項之發明，其特徵為，申請專利範圍 第2項之基板處理裝置中，具備有切換手段，切換成為當 在上述處理室之基板入口存在有基板時，使上述上·下一 對之入口側氣體吐出手段和上述上·下一對之入口側氣體 吸入手段分別進行動作；當在上述處理室之基板出口存在 有基板時，使上述上·下一對之出口側氣體吐出手段和上· 下一對之出口側氣體吸入手段分別進行動作；當在上述處 理室之基板入口未存在有基板時，使上述上方側或下方側 之入口側氣體吐出手段和上述下方側或上方側之入口側氣 體吸入手段分別進行動作；當在上述處理室之基板出口未 8 312XP/發明說明書(補件)/94-04/93139789 200527503 存在有基板時，使上述上方側或下方側之出口側氣體吐出 手段和上述下方側或上方側之出口側氣體吸入手段分別進 行動作。 申請專利範圍第4項之發明的特徵為在申請專利範圍第 1至3項中任一項之基板處理裝置中，使上述處理室在基 板之相對移動方向連續地設置多個。 (發明效果） 在申請專利範圍第1或2項之各個發明之基板處理裝置 中，在密閉型之處理室内部配置對於基板施加指定處理之 處理工具，由於利用氣體供給手段和氣體排出手段隔絕處 理室之内部環境和外部環境，所以可容易地防止處理液的 流出與飛散、並可防止處理液之飛沫或蒸發氣體擴散到周 邊環境。另一方面，處理室之長度設為在基板之相對移動 方向上的尺寸小於基板，因為使處理室和基板進行相對地 移動，所以可以使裝置小型化，可達成節省空間和降低成 本之同時，亦可以減少處理液之使用量。 尚且，在申請專利範圍第 1項之發明的基板處理裝置 中，藉由氣體供給手段（沖洗用氣體供給手段）將沖洗用氣 體供給到密閉型之處理室内，藉此抑制氣體從外部侵入到 處理室内，藉由氣體排出手段（排氣手段）將沖洗用氣體從 處理室内排氣，藉此抑制氣體從處理室内漏出到外部。藉 此可隔絕處理室之内部環境和外部環境。更進一步，在申 請專利範圍第1項之發明的基板處理裝置中，基板在處理 室内相對地移動，即使處理室之内部空間被基板分斷成為 9 312XP/發明說明書(補件)/94-(M/931 %789 200527503 上·下部份，藉由將氣體供給手段和氣體排出手段分別設 在基板之相對移動路徑的上方側空間和下方側空間，可確 實地隔絕處理室之内部環境和外部環境。 另外，在申請專利範圍第2項之發明的基板處理裝置， 從入口側氣體吐出手段和出口側氣體吐出手段之各氣體吐 出口 ，朝向基板之相對移動路徑分別吐出氣幕用氣體的同 時，通過入口側氣體吸入手段和出口側氣體吸入手段之各 氣體吸入口 ，分別吸入氣幕用氣體，藉此在處理室之基板 入口和基板出口分別形成氣幕。藉此可以隔絕處理室之内 部環境和外部環境。更進一步，在申請專利範圍第2項之 發明的基板處理裝置，基板對於處理室進行相對地移動， 即使處理室之基板入口或基板出口被基板分斷成為上·下 部份，藉由使入口側及出口側之各氣體吐出手段、和入口 側及出口側之各氣體吸入手段包夾著基板之相對移動路徑 並分別被設在上方側和下方側，則可以確實地隔絕處理室 之内部環境和外部環境。 在申請專利範圍第3項之發明的基板處理裝置中，當在 處理室内沒有基板存在時，在處理室之基板入口和基板出 口 ，分別從上方側或下方側之氣體吐出手段之氣體吐出 口，朝向基板之相對移動路徑吐出氣幕用氣體之同時，通 過下方側或上方側之氣體吸入手段之氣體吸入口 ，吸入氣 幕用氣體，藉此形成氣體之氣幕。 在處理室内基板之一部份進行相對地移動，當在處理室 之基板入口存在有基板、在基板出口未存在有基板時，在 10 312XP/發明說明書(補件)/94-04/93139789 200527503 處理室之基板入口 ，從上·下一對之入口側氣體吐出手段 之氣體吐出口 ，朝向基板之相對移動路徑分別吐出氣幕用 氣體，各氣幕用氣體在基板之上面和下面分別彈回，通過 上·下一對之入口側氣體吸入手段之氣體吸入口分別被吸 入，藉此在基板之上·下兩面側分別形成氣體之氣幕。另 一方面，在處理室之基板出口 ，從上方側或下方側之出口 側氣體吐出手段之氣體吐出口 ，朝向基板之相對移動路徑 吐出氣幕用氣體之同時，通過下方側或上方側之出口側氣 體吸入手段之氣體吸入口 ，吸入氣幕用氣體’糟此形成氣 體之氣幕。 在處理室内基板相對地移動，當在處理室之基板入口和 基板出口存在有基板時，在處理室之基板入口和基板出 口 ，分別從上·下一對之氣體吐出手段之氣體吐出口 ，朝 向基板之相對移動路徑分別吐出氣幕用氣體’各氣幕用氣 體在基板之上面和下面分別彈回，通過上·下一對之氣體 吸入手段之氣體吸入口分別被吸入，藉此在基板之上·下 兩面側分別形成氣體之氣幕。 另外，當在處理室之基板入口未存在有基板、而在基板 出口存在有基板時，在處理室之基板入口，從上方側或下 方側之入口側氣體吐出手段之氣體吐出口 ，朝向基板之相 對移動路徑吐出氣幕用氣體之同時，通過下方側或上方側 之入口側氣體吸入手段之氣體吸入口吸入氣幕用氣體，藉 此形成氣體之氣幕。另一方面，在處理室之基板出口 ，從 上·下一對之出口側氣體吐出手段之氣體吐出口，朝向基 11 312XP/發明說明書(補件)/94-04/93139789 200527503 板之相對移動路徑分別吐出氣幕用氣體，各氣幕用氣體 基板之上面和下面分別彈回，通過上·下一對之出口側 體吸入手段之氣體吸入口分別被吸入，藉此在基板之上 下兩面側分別形成氣體之氣幕。 利用上述之作用，可以使處理室之内部環境和外部環 時常且確實地隔絕。 在申請專利範圍第4項之發明的基板處理裝置中，藉 多個連續設置的處理室對於基板連續地施加多種之處理 例如蝕刻處理、水洗處理和乾燥處理。另外，由於各個 理室之長度小於基板之相對移動方向的尺寸，所以可以 制裝置全體之大型化。 【實施方式】 下面參照圖1至圖1 1，針對本發明之最佳實施形態進 說明。 圖1概略地表示本發明之實施形態之1實例，為模式 地表示基板處理裝置之概略構造。 該基板處理裝置具備有基板搬入口 1 2和基板搬出口 的密閉型之處理室1 0。在處理室1 0之内部配置有作為 基板 W施加指定處理之處理工具的超音波·高壓噴射 淨·水洗處理部1 6和氣刀乾燥處理部1 8。超音波·高 喷射洗淨·水洗處理部1 6和氣刀乾燥處理部1 8係包夾 基板W之搬運路徑而分別被設置在其之上方側和下方側 另外，具備有滾筒輸送器2 0，以進行基板W之搬入到處 室10内，在處理室10内之搬運和從處理室10内之搬出 312XP/發明說明書(補件)/94-04/93139789 在 氣 境 由 5 處 抑 行 性 14 對 洗 壓 著 〇 理 12 200527503 處理室10如圖2之概略平面圖所示，其寬度設為大於 或等於基板W在搬運方向之正交方向的尺寸，其長度設為 小於基板W在搬運方向的尺寸。因此，基板W在其一部份 被收容於處理室1 0内之狀態，對其收容部份實施超音波· 高壓喷射洗淨·水洗處理或氣刀乾燥處理。然後，基板 W 藉由滾筒輸送器 2 0搬運而各部份順序地通過處理室 10 内，在基板W之全體完全通過處理室1 0内時，則結束對基 板W之全面的處理。依此，藉由使處理室1 0之平面形狀小 於基板W，可使裝置全體小型化。 另外，在處理室 1 0分別設有氣體供給口 2 4和排氣口 2 6，在氣體供給口 2 4，連通地接續有空氣、氮氣等之沖洗 用氣體之供給管，例如空氣供給管2 8，成為從圖中未顯示 之空氣供給源通過空氣供給管2 8將空氣供給到處理室1 0 内。另外，在排氣口 2 6連通地接續有排氣管3 0，通過空 氣供給管2 8而供給到處理室1 0内之沖洗用空氣，則通過 排氣管3 0藉由圖中未顯示之真空排氣泵排氣。藉由適當地 調節·控制對處理室1 0内之空氣供給流量和自處理室1 0 内之排氣流量，可抑制外來氣體通過基板搬入口 1 2或基板 搬出口 1 4從外部侵入到處理室1 0内，並可抑制氣體通過 基板搬入口 1 2或基板搬出口 1 4從處理室1 0内向外部漏 出。依此，使處理室1 0之内部環境和外部環境被隔絕，可 防止洗淨所使用之純水的飛沬或以氣刀1 8從基板W上除去 而蒸發之氣體向處理室1 0外擴散。尚且，在處理室1 0亦 設有排水口’但省略其圖示。 13 312XP/發明說明書(補件)/94-04/93139789 200527503 圖3模式性地表示，本發明之另一實施形態之基板處理 裝置的概略構造。該基板處理裝置具備有與圖1所示之基 板處理裝置之處理室1 0為同樣的處理室1 0 (在圖3中，於 與圖1所示之基板處理裝置為共通之構成構件，亦標示與 圖1所使用之符號為相同之符號，而其等之說明則加以省 略），同時，在處理室1 0之上游側設置有另一個之處理室 32。處理室32亦為具有基板搬入口 34和基板搬出口 36 之密閉型，在處理室3 2之内部配置有對基板W上面施加餘 刻處理的蝕刻處理部38。另外，在處理室32之内部配置 有搬運基板W用之滾筒輸送器2 2。 與處理室1 0同樣地，處理室3 2亦使其寬度等於或大於 在基板W搬運方向之正交方向的尺寸，使其長度小於在基 板W之搬運方向的尺寸。因此，基板W在其一部份被收容 於處理室3 2内之狀態，於其收容部份實施蝕刻處理，藉由 基板W以滾筒輸送器2 2搬運則各個部份順序地通過處理室 3 2内，而對基板W之全面進行蝕刻處理。在該基板處理裝 置係利用2個連設之處理室3 2、1 0對於基板W連續施加蝕 刻處理與超音波·高壓噴射洗淨·水洗處理及氣刀乾燥處 理，但因為各個處理室3 2、1 0之長度分別小於基板W之搬 運方向的尺寸，故可使裝置全體小型化。 另外，在處理室3 2亦分別設有氣體供給口 4 0和排氣口 4 2，於氣體供給口 4 0連通接續著空氣供給管 4 4，於排氣 口 4 2連通接續著排氣管4 6。其次，與處理室1 0同樣地， 藉由適當地調節·控制對處理室32内之空氣的供給流量與 14 312XP/發明說明書(補件)/94-04/93139789 200527503 從處理室3 2内之排氣流量，可隔絕處理室3 2之内部環境 和外部環境。 圖4和圖5為表示處理室之構造例，圖4為處理室之沿 基板搬運方向之剖面圖，表示圖5之I V - I V箭頭視線剖面 圖；圖5為處理室在基板搬運方向之正交方向之剖面圖， 表示圖4之V - V箭頭視線剖面圖。 該處理室4 8為具有基板搬入口 5 0和基板搬出口 5 2之 密閉型，在處理室48之内部配置有處理工具54，但處理 室4 8在基板W之搬運方向之正交方向，使其底面和頂面傾 斜，基板W亦以在其搬運方向之正交方向為傾斜之姿勢藉 由滾筒搬送器（圖中未顯示。在圖6至圖1 0亦同）搬運。另 外，該處理室48亦為使其寬度等於或大於基板W之搬運方 向之正交方向的尺寸，使其長度小於基板W之搬運方向的 尺寸。尚且，在處理室48於其頂面之高側端附近設有氣體 供給口 5 6，於該氣體供給口 5 6連通接續有空氣供給管5 8， 又，在處理室 4 8之底面的低側端附近設有排氣·排液口 6 0，在該排氣·排液口 6 0連通接續著排氣·排液管6 2。 在此種構造之處理室4 8，流下到底面之排液沿著傾斜面自 然地流向一側端側，通過排氣·排液管6 2從排氣·排液口 60排出。 其次，於圖6所示之沿基板搬運方向之剖面圖的處理室 64，為具有基板搬入口 66和基板搬出口 68之密閉型，在 該處理室64之内部，處理工具70a、70b包夾著基板搬運 路徑而分別設置於其之上方和下方。另外，在處理室 64 15 312XP/發明說明書(補件)/94-(M/93139了89 200527503 之頂面與處理工具7 0 a之間，及處理室 具7 0 b之間，分別設有隔壁7 1 a、7 1 b， 7 1 b在基板搬運方向將處理室6 4之内旬 該前·後之内部空間經由形成於基板W 7 1 b之對向面之間的通路，連接成流通 理室6 4之頂面和底面，於較隔壁7 1 a、 基板搬運方向之前方側，分別設置氣體 在該各氣體供給口 7 2 a、7 2 b分別連通 74a、74b。又，在處理室64之頂面和底 7 1 b之形成位置的基板搬運方向之前方 口 76a、76b，在該各排氣口 76a、76b 氣管 78a 、 78b ° 在具有此種構造之處理室64中，基 室64内，即使處理室64之内部空間如 板W分斷成為上·下部份，通過空氣供 洗用之空氣分別供給到基板搬運路徑之 側空間，又，通過排氣管7 8 a、7 8 b從基 側空間和下方側空間分別將空氣排氣。 調節·控制對處理室 64内之空氣的供 64内的排氣流量，可確實地隔絕處理I 外部環境。另外，由於處理室6 4内之空 所示般地流動，故藉由形成該種氣流， 附著於處理完成之基板W表面。 圖7至圖10為表示處理室的另一構 312XP/發明說明書(補件)/94-04/93139789 64之底面與處理工 藉由該隔壁7 1 a、 s空間前後地分隔， 與處理工具7 1 a、 路徑。接著，在處 7 1 b之形成位置的 供給口 72a 、 72b ， 接續著空氣供給管 面，於較隔壁7 1 a、 側，分別設置排氣 分別連通接續著排 板W被搬入到處理 圖6所示般地以基 給管7 4 a、7 4 b將沖 上方側空間和下方 板搬運路徑之上方 因此，藉由適當地 給流量和從處理室 [6 4之内部環境和 氣如圖6中以虛線 可防止霧（粒子）再 造例之沿基板搬運 16 200527503 方向之剖面圖。該處理室8 0亦為具有基板搬入口 8 2和基 板搬出口 8 4之密閉型，在處理室8 0之内部設有處理工具 86，而在該處理室 80於基板搬入口 82和基板搬出口 84 分別配置有氣體供給手段和氣體排出手段。 亦即，在處理室80之基板搬入口 82於包夾著基板搬運 路徑之上方側和下方側，設置有接近基板搬運路徑並對向 地開口之上·下一對的空氣吐出通路88a、88b，在各空氣 吐出通路8 8 a、8 8 b分別連通接續著流通接續到空氣供給源 (圖中未顯示）之空氣供給管90a、90b。又，在包夾著基板 搬運路徑之上方側和下方侧，設置有鄰接空氣吐出通路 8 8 a、8 8 b、且接近基板搬運路徑並對向地開口之上·下一 對的空氣吸入通路92a、92b，在各空氣吸入通路92a、92b， 分別連通接續著流通接續到真空排氣泵（圖中未顯示）之排 氣管 94a、94b。空氣吐出通路88a、88b和空氣吸入通路 9 2 a、9 2 b分別被設置成涵蓋基板搬入口 8 2之開口寬度（基 板搬運方向之正交方向的開口寬度）的全體。接著，從空氣 吐出通路88a、88b自該空氣吐出口朝向基板搬運路徑吐出 氣幕用空氣，該吐出之空氣通過空氣吸入口被吸入到空氣 吸入通路9 2 a、9 2 b内，如後述般地在基板搬入口 8 2形成 空氣氣幕。 另外，在處理室8 0之基板搬出口 8 4亦同樣地，在包夾 著基板搬運路徑之上方側和下方側，設置有接近基板搬運 路徑並對向地開口之上·下一對的空氣吐出通路 96a、 9 6 b，在各空氣吐出通路9 6 a、9 6 b分別連通接續著流通接 17 312XP/發明說明書(補件)/94-04/93139789 200527503 續到空氣供給源（圖中未顯示）之空氣供給管 9 8 a、9 8 b。 又，在包夾著基板搬運路徑之上方側和下方側，設置有鄰 接空氣吐出通路9 6 a、9 6 b、且接近基板搬運路徑並對向地 開口之上·下一對的空氣吸入通路100a、100b，在各空氣 吸入通路1 0 0 a、1 0 0 b分別連通接續著流通接續到真空排氣 泵（圖中未顯示）之排氣管1 0 2 a、1 0 2 b。 雖圖中未顯示，但在各空氣供給管90a、90b、98a、98b 和各排氣管9 4 a、9 4 b、1 0 2 a、1 0 2 b分別插入設有開閉控制 閥。接著，利用控制裝置分別切換控制各開閉控制閥，藉 此在基板搬入口 8 2和基板搬出口 8 4經常地形成空氣氣 幕，構建成為使處理室8 0之内部環境和外部環境經常且確 實地被隔絕。該切換動作係以下面所述般進行。 首先，如圖7所示，當在處理室80内存在有基板W時， 分別在處理室 8 0之基板搬入口 8 2和基板搬出口 8 4，從 上·下一對之空氣吐出通路88a、88b; 96a、96b之空氣吐 出口 ，朝向基板搬運路徑分別吐出空氣，該被吐出之空氣 在基板W之上面和下面分別彈回，通過空氣吸入口分別被 吸入到上·下一對之空氣吸入通路92a、92b; 100a、100b 内並被排氣。依此，在處理室8 0之基板搬入口 8 2和基板 搬出口 84的基板W之上·下兩面側分別形成空氣氣幕。 其次，如圖 8所示，當在處理室80内未存在有基板W 時，分別在處理室8 0之基板搬入口 8 2和基板搬出口 8 4， 從上方側或下方側（於圖示例中為上方側）之空氣吐出通路 8 8 a、9 6 a之空氣吐出口 ，朝向基板搬運路徑吐出空氣，該 18 312XP/發明說明書(補件)/94-04/93139789 200527503 被吐出之空氣通過空氣吸入口被吸入到下方側或上方側 (於圖示例中為下方側）之空氣吸入通路9 2 b、1 0 0 b内並被 排氣。依此，僅從上·下一對之空氣吐出通路8 8 a、8 8 b ; 96a、96b之其中一側的空氣吐出口吐出空氣，在上·下一 對之空氣吸入通路92a、92b; 100a、100b中，僅於與吐出 空氣之空氣吐出通路為對向側的空氣吸入口吸入空氣，藉 此在處理室8 0之基板搬入口 8 2和基板搬出口 8 4分別形成 空氣氣幕。 又，如圖9所示，當基板W之前端位於處理室80内時， 在處理室80之基板搬入口 82，從上·下一對之空氣吐出 通路8 8 a、8 8 b之空氣吐出口，分別朝向基板搬運路徑吐出 空氣，該被吐出之各空氣在基板 W之上面和下面分別彈 回，通過空氣吸入口分別被吸入到上·下一對之空氣吸入 通路92a、92b内並被排氣。依此，在處理室80之基板搬 入口 8 2的基板W之上·下兩側分別形成空氣氣幕。另一方 面，在處理室8 0之基板搬出口 8 4，從上方側或下方側（於 圖示例中為上方側）之空氣吐出通路9 6 a的空氣吐出口，朝 向基板搬運路徑吐出空氣，該被吐出之空氣通過空氣吸入 口被吸入到下方側或上方側（於圖示例中為下方側）之空氣 吸入通路1 0 0 b内並被排氣。依此，在處理室8 0之基板搬 出口 84形成空氣氣幕。 另外，如圖1 0所示，當基板W之後端位於處理室8 0内 時，在處理室8 0之基板搬入口 8 2，從上方側或下方側（於 圖示例中為上方側）之空氣吐出通路8 8 a的空氣吐出口，朝 19 312XP/發明說明書(補件)/94-04/93139789 200527503 向基板搬運路徑吐出空氣，該被吐出之空氣通過空氣吸入 口被吸入到下方側或上方側（於圖示例中為下方側）之空氣 吸入通路9 2 b内並被排氣。依此，在處理室8 0之基板搬入 口 82形成空氣氣幕。另一方面，在處理室80之基板搬出 口 84，從上·下一對之空氣吐出通路96a、96b之空氣吐 出口朝向基板搬運路徑分別吐出空氣，該被吐出之各空氣 在基板W之上面和下面分別彈回，通過空氣吸收口分別被 吸入到上·下一對之空氣吸入通路 1 0 0 a、1 0 0 b 内並被排 氣。依此，在處理室80之基板搬出口 84的基板…之上· 下兩面側分別形成空氣氣幕。 在上述之各實施形態之說明中，為處理室1 0、3 2、4 8、 6 4、8 0被固定而搬運基板W之方式，但亦可使處理室和基 板相對地移動以進行基板之處理。圖 1 1 ( a )所示之概略圖 的裝置，為如上述各實施形態之基板處理裝置般，將在内 部配置有處理工具104之處理室106固定而搬運基板W之 方式。圖11(b)所示之裝置為將基板W固定，而使處理室 1 0 6相對於基板W相對地移動。圖11 ( c )所示之裝置為使基 板W和處理室1 0 6分別朝向同一方向移動，而使處理室1 0 6 之移動速度較基板W之搬運速度慢。尚，亦可使基板W和 處理室106分別朝向互相相反之方向移動。圖11(d)所示 之裝置為將設有處理工具104a之處理室106a和設有處理 工具 104b之處理室 106b連續設置於基板搬運方向並固 定，相對於該等之處理室1 0 6 a、1 0 6 b搬運基板W的構造例。 當然，與圖1 1 ( b)或（c )同樣地，亦可將基板W固定，使處 20 312XP/發明說明書(補件)/94-04/93139789 200527503 理室1 0 6 a、1 0 6 b相對於基板W移動，或使處理室1 0 6 a、 1 Ο 6 b以較基板搬運速度為慢之速度，與基板W朝向同一方 向移動。又，圖 11(e)所示之裝置為將在包夾著基板搬運 路徑之上方和下方分別配置有處理工具1 0 8 a、1 0 8 b之處理 室1 1 0固定，相對於該處理室11 0搬運基板W的構造例。 當然，與圖1 1 ( b)或（c)同樣地，亦可將基板W固定，使處 理室1 1 0相對於基板W移動，或使處理室1 1 0以較基板搬 運速度為慢之速度，與基板W朝向同一方向移動。 【圖式簡單說明】 圖1表示本發明之實施形態之1例，為模式性地表示基 板處理裝置的概略構造之圖。 圖2為圖1所示之基板處理裝置之處理室的概略平面圖。 圖3為模式性地表示本發明之其他實施形態之基板處理 裝置的概略構造之圖。 圖4表示本發明之基板處理裝置之處理室的構造例，為 處理室之沿基板搬運方向之剖面圖，且為圖5之I V - I V箭 頭視線剖面圖。 圖5為圖4所示之處理室的基板搬運方向之正交方向之 剖面圖，且為圖4之V-V箭頭視線剖面圖。 圖6為表示本發明之基板處理裝置的處理室之其他構造 例之沿基板搬運方向的剖面圖。 圖7為表示本發明之基板處理裝置的處理室之其他構造 例之沿基板搬運方向的剖面圖。 圖8同樣為處理室之剖面圖，表示與圖7所示之狀態為 21 312XP/發明說明書(補件)/94-04/93139789 200527503 相異之狀態。 圖9同樣為處理室之剖面圖，表示與圖7和圖8所示狀 態為相異之狀態。 圖1 0同樣為處理室之剖面圖，表示圖7至圖9所示之狀 態為相異之狀態。 圖 1 1 ( a )至（e )為分別表示基板和處理室之相對移動之 態樣的模式圖。 【主要元件符號說明】 W 基板 10、32、48、64、80、處理室 106 、 106a 、 106b 、 110 12、 34、 50、 66、 82 基板搬入口 14、 36、 52、 68、 84 基板搬出口 16 處理工具（超音波·高壓喷射洗淨·水洗處理部） 18 處理工具（氣刀乾燥處理部） 2 0、2 2 滾筒輸送器 24、 40、 56、 72a、 72b 氣體供給口 2 6、4 2、7 6 a、7 6 b 排氣口 28、 44、 58、 74a、 74b 空氣供給管 、90a、 90b、 98a、 98b 30、 46、 78a、 78b、 94a排氣管 94b 、 102a、 102b 38 蝕刻處理部 54、 70a、 70b、 86、 104處理工具 104a、 104b、 108a、 108b 60 排氣·排液口 6 2 排氣·排液管 22 312XP/發明說明書(補件)/94-04/93139789 88a、 92a、 200527503 88b、96a、96b 空氣吐出通路 92b、100a、100b 空氣吸入通路200527503 IX. Description of the invention: [Technical field to which the invention belongs] The present invention relates to a substrate processing apparatus for handling semiconductor wafers, glass substrates for flat panel displays (FPD), glass substrates for photomasks, and brush substrates. In this case, various processes such as ultrasonic and high-pressure jet cleaning, water washing, air knife drying, etching, development, and separation are applied to the substrate. [Prior art] When applying wet processing such as ultra-wave, high-pressure jet cleaning, water-washing, or etching to substrates such as semiconductor wafers or glass substrates for FPD, substrate processing with a processing chamber is used. The apparatus includes processing tools such as an ultrasonic and high-pressure jet cleaning device, a water washing device, and an etching device inside the processing chamber. Then, while the substrate is transported by the transfer mechanism of the roller conveyor, a chemical solution such as pure or etching solution is supplied to the substrate in the processing chamber, and the substrate is given a predetermined treatment. Accordingly, while the processing chamber is being transported, the wet processing is performed in the processing chamber. Therefore, the processing chamber is equal to or larger than the size of the substrate when viewed from a plane. In addition, it is proposed that a substrate processing apparatus having no processing chamber and having a size smaller than the substrate in the substrate conveying direction is provided. That is, the substrate processing device mentioned has an introduction path having a guide port for introducing a processing liquid at one end, and a discharge port having a discharge port for discharging the processing liquid after wet processing to the outside at one end. The discharge path is formed by intersecting the introduction path with the discharge path at the other end to form a cross section. The cross section includes a nozzle structure provided with an opening opening to the substrate. 312XP / Invention Manual (Supplement) / 94 -04/93139789 The water board at the peeling point of the crystal printing is wet and prepared due to the case of 5 200527503 tool, the size of the processing tool in the substrate transport direction is smaller than the substrate (for example, refer to the Japanese Heisei 1 0 Patent Application Publication No. 16 3 1 5 3). [Summary of the Invention] (Problems to be Solved by the Invention) In a substrate processing apparatus including a processing chamber in which a processing tool is disposed, as the substrate size becomes larger, the processing chamber becomes larger and the entire apparatus becomes larger. For example, in an apparatus for performing an etching process, it is necessary to continuously set an etching processing chamber, a water washing processing chamber, and a drying processing chamber in the direction of carrying the substrate. The overall size of the apparatus becomes large, the space occupied by the clean room becomes larger, and the manufacturing cost of the apparatus increases . In addition, there is a problem in that the use amount of the chemical solution or pure water increases due to the enlargement of the processing chamber. On the other hand, in a substrate processing apparatus that does not have a processing chamber and has processing tools smaller than the substrate, although it is advantageous in terms of installation space and manufacturing cost, the amount of chemical solution or pure water used is also reduced, but preventive drugs are required. Means or controls for the outflow or scattering of liquid and pure water outside the discharge path complicate the device structure or control mechanism. In addition, there is a possibility that droplets or evaporated gas of the treatment liquid may diffuse from the opening of the nozzle structure toward the surrounding environment. The present invention has been made in view of the above-mentioned problems, and an object thereof is to provide a substrate processing apparatus having a processing chamber structure in which processing tools are arranged inside. At the same time, the apparatus can be miniaturized and the amount of processing liquid can be reduced. In addition, because it has a structure with a processing chamber, it is easy to prevent the outflow or scattering of the processing liquid, and there is no risk that the spray of the processing liquid or the evaporated gas will diffuse to the surrounding environment. (Means for Solving the Problem) 312XP / Invention Specification (Supplement) / 94-04 / 93139789 200527503 The invention in the scope of patent application No. 1 is a substrate processing apparatus including a closed type processing chamber having a substrate inlet and a substrate outlet A processing tool for applying a specified processing to a substrate disposed inside the processing chamber; a moving means for relatively moving the substrate to the processing tool; characterized in that the width of the processing chamber is equal to or greater than the relative moving direction of the substrate Dimensions in the orthogonal direction, and the length of the processing chamber is smaller than the relative movement direction of the substrate, and the processing chamber configured with the processing tool and the substrate are relatively moved; in order to isolate the internal environment and the external environment of the processing chamber, The upper space and the lower space of the relative movement path of the substrate are provided with a gas supply means (a flushing gas supply means) for supplying a flushing gas to the processing chamber, and a gas exhausting the flushing gas from the processing chamber. Exhaust means (exhaust means). The invention of claim 2 is a substrate processing apparatus including a closed type processing chamber having a substrate inlet and a substrate outlet, and a processing tool for applying a specified processing to a substrate disposed inside the processing chamber to make the substrate The processing means for relatively moving the processing tool is characterized in that the width of the processing chamber is equal to or larger than the size of the orthogonal direction of the relative movement direction of the substrate, and the length of the processing chamber is smaller than the size of the relative movement direction of the substrate. The processing chamber on which the processing tool is disposed and the substrate are relatively moved; in order to isolate the internal environment and the external environment of the processing chamber, a gas supply means is provided, and the structure includes: gas discharge at the inlet side of the upper and lower pairs Means: The substrate inlet of the processing chamber is arranged above and below the relative movement path of the sandwich substrate, and has opposite gas outlets close to the relative movement path of the substrate, respectively. 312XP / Invention Manual (Supplement) / 94-04 / 93139789 200527503 Relative movement path of substrate Do not spit out gas for the air curtain; and the means for discharging the gas on the exit side of the upper and lower pairs. The substrate exits of the processing chambers are respectively arranged above and below the relative movement path of the sandwiched substrates, and each has an approach to the substrate. Opposite gas outlets of the relative movement path, each of which emits gas for a gas curtain from the gas outlet to the relative movement path of the substrate; and has a gas exhaust means, the structure of which includes: upper and next pair of inlet-side gases The suction means is arranged on the substrate inlet of the processing chamber above and below the relative movement path of the sandwich substrate, and has opposite gas suction ports close to the relative movement path of the substrate, respectively. Through the gas suction ports, The gas for inhaling the air curtain; and the gas inhalation means for the exit side of the upper and lower pairs. At the substrate exit of the processing chamber, the upper and lower sides of the relative movement path of the sandwich substrate are respectively arranged, and the opposite sides of the substrate are respectively provided. The gas suction ports opposite to the moving path suck the gas for the air curtain respectively through the gas suction ports. The invention of claim 3 is characterized in that the substrate processing apparatus of claim 2 is provided with a switching means to switch the above-mentioned up / down when there is a substrate at the substrate inlet of the processing chamber. The pair of inlet side gas discharge means and the upper and next pair of inlet side gas suction means operate separately; when a substrate is present at the substrate outlet of the processing chamber, the upper and next pair of outlet side gas are discharged The means and the upper and lower pair of side-side gas suction means operate separately; when there is no substrate at the substrate inlet of the processing chamber, the above-side or below-side gas-exhaust means and the above-mentioned lower side or above The gas inlet means on the inlet side are operated separately. When the substrate outlet in the processing chamber is not 8 312XP / Invention Manual (Supplement) / 94-04 / 93139789 200527503, there is a substrate on the upper side or the lower side. The side gas discharge means and the above-mentioned outlet side gas suction means operate separately. The invention of claim 4 is characterized in that, in the substrate processing apparatus of any of claims 1 to 3, a plurality of the above-mentioned processing chambers are continuously arranged in the direction of relative movement of the substrate. (Effects of the Invention) In the substrate processing apparatus of each of the inventions claimed in claims 1 or 2, a processing tool for applying a predetermined processing to the substrate is disposed inside the closed processing chamber. The gas supply means and the gas exhausting means are used to isolate the processing. The internal environment and external environment of the chamber can easily prevent the outflow and scattering of the treatment liquid, and can prevent the spray of the treatment liquid or the evaporated gas from diffusing into the surrounding environment. On the other hand, the length of the processing chamber is set to be smaller than the substrate in the relative movement direction of the substrate. Because the processing chamber and the substrate are moved relatively, the device can be miniaturized, and space and cost can be reduced. It can also reduce the amount of processing liquid used. Furthermore, in the substrate processing apparatus of the invention claimed in the first claim, the flushing gas is supplied into the closed processing chamber by a gas supply means (gas supply means for flushing), thereby suppressing the intrusion of the gas into the process from the outside. In the room, the flushing gas is exhausted from the processing chamber by a gas exhausting means (exhaust means), thereby suppressing leakage of the gas from the processing chamber to the outside. This allows the internal and external environment of the processing chamber to be isolated. Furthermore, in the substrate processing apparatus of the invention claimed in item 1 of the patent application, the substrate moves relatively within the processing chamber, even if the internal space of the processing chamber is divided by the substrate into 9 312XP / Invention Specification (Supplement) / 94- ( M / 931% 789 200527503 The upper and lower parts are provided with gas supply means and gas discharge means in the upper space and lower space of the relative movement path of the substrate, respectively, which can reliably isolate the internal environment and the outside of the processing chamber. In addition, in the substrate processing apparatus of the invention claimed in the second item of the patent application, the gas for the gas curtain is discharged from each of the gas outlets of the inlet-side gas discharge means and the outlet-side gas discharge means toward the relative movement path of the substrate. Through the gas inlets on the inlet side and the gas inlet on the outlet side, the gas for the gas curtain is sucked in to form a gas curtain at the substrate inlet and the substrate outlet of the processing chamber. This can isolate the interior of the processing chamber. Environment and external environment. Furthermore, the substrate processing apparatus of the invention in the second patent application scope, the substrate Relatively move in the processing chamber, even if the substrate inlet or substrate outlet of the processing chamber is divided into upper and lower parts by the substrate, each of the inlet side and outlet side gas outlet means and each of the inlet side and outlet side The gas suction means sandwiches the relative movement path of the substrate and is provided on the upper side and the lower side, respectively, so that the internal environment and the external environment of the processing chamber can be reliably isolated. In the substrate processing apparatus of the third invention of the patent application, When there is no substrate in the processing chamber, at the substrate inlet and the substrate outlet of the processing chamber, the gas ejection outlets of the gas ejection means from the upper side or the lower side respectively discharge the gas for the air curtain toward the relative movement path of the substrate, Through the gas suction port of the gas suction means on the lower side or the upper side, the gas for the air curtain is sucked, thereby forming a gas curtain of the gas. Relatively moving a part of the substrate in the processing chamber, when there is a substrate inlet in the processing chamber When there is a substrate, and there is no substrate at the substrate exit, it is at 10 312XP / Invention Manual (Supplement) / 94-04 / 93139789 20052750 3 The substrate inlet of the processing chamber, from the gas outlet of the gas-exhausting means at the inlet side of the upper and lower pairs, respectively, the gas for the gas curtain is ejected toward the relative movement path of the substrate, and the gas for the gas curtain is ejected on the substrate above and below Back, the gas inlets of the upper and lower pairs of inlet-side gas suction means are respectively sucked in, thereby forming gas curtains on the upper and lower sides of the substrate. On the other hand, at the substrate exit of the processing chamber, From the gas discharge port of the gas discharge means on the upper side or the lower side, the gas for the air curtain is discharged toward the relative movement path of the substrate, and the gas is sucked through the gas suction port of the gas suction means on the lower side or the upper side. The curtain gas is used to form a gas curtain of gas. The substrates move relatively in the processing chamber. When there are substrates in the substrate inlet and the substrate outlet of the processing chamber, the substrate inlet and the substrate outlet of the processing chamber are respectively from top to bottom. The gas outlets of a pair of gas discharge means discharge the gas for the gas curtain toward the relative movement path of the substrate. Member respectively above and below the spring back of the substrate, by a pair of the gas-suction means of the gas inlet port are sucked, whereby the lower surfaces on the substrate-side air curtains are formed gases. In addition, when a substrate does not exist at the substrate inlet of the processing chamber and a substrate exists at the substrate outlet, the gas inlet of the substrate side of the processing chamber is directed from the gas outlet of the gas outlet means on the upper side or the lower side toward the substrate. At the same time that the gas for the air curtain is discharged from the relative movement path, the gas for the air curtain is sucked in through the gas suction port of the inlet-side gas suction means at the lower side or the upper side, thereby forming a gas curtain for the gas. On the other hand, at the substrate outlet of the processing chamber, the gas outlets of the gas outlet means from the upper and lower pairs of the outlet side are directed toward the relative movement of the base 11 312XP / Invention Manual (Supplement) / 94-04 / 93139789 200527503 The gas for the air curtain is discharged from the path, and the upper and lower surfaces of the gas substrates for the air curtains are respectively rebounded, and the gas suction ports through the upper and lower pairs of the side-body suction means are respectively sucked in, thereby being on the upper and lower sides of the substrate. A curtain of gas is formed separately. By using the above-mentioned effects, the internal environment and the external environment of the processing chamber can be constantly and surely isolated. In the substrate processing apparatus of the invention claimed in claim 4 of the patent application, a plurality of successively disposed processing chambers continuously apply various processes to the substrate, such as an etching process, a water washing process, and a drying process. In addition, since the length of each processing chamber is smaller than the size in the relative moving direction of the substrate, the entire device can be made larger. [Embodiment] The best embodiment of the present invention will be described below with reference to Figs. 1 to 11. Fig. 1 schematically shows an example of the embodiment of the present invention, and schematically shows a schematic structure of a substrate processing apparatus. This substrate processing apparatus includes a sealed processing chamber 10 having a substrate carrying inlet 12 and a substrate carrying outlet. Inside the processing chamber 10, an ultrasonic, high-pressure jet cleaning, washing processing section 16 and an air knife drying processing section 18, which are processing tools for applying a predetermined process to the substrate W, are arranged. The ultrasonic, high-jet cleaning, and water-washing processing unit 16 and the air knife drying processing unit 18 are respectively disposed on the upper side and the lower side of the transport path of the sandwich substrate W. In addition, they are equipped with a roller conveyor 20, In order to carry the substrate W into the everywhere room 10, carry it in the processing room 10, and carry it out of the processing room 10 312XP / Invention Manual (Supplement) / 94-04 / 93139789 In the atmosphere from 5 places 14 The processing chamber 10 is shown in the schematic plan view of FIG. 2. The width of the processing chamber 10 is set to be greater than or equal to the dimension of the substrate W in the orthogonal direction and the length is set to be smaller than that of the substrate W in the transport direction. size. Therefore, in a state where a part of the substrate W is contained in the processing chamber 10, the containing portion is subjected to ultrasonic, high-pressure jet cleaning, water washing, or air knife drying processing. Then, the substrate W is transported by the roller conveyor 20 and each part passes through the processing chamber 10 sequentially. When the entire substrate W completely passes through the processing chamber 10, the comprehensive processing of the substrate W is ended. Accordingly, by making the planar shape of the processing chamber 10 smaller than the substrate W, the entire device can be miniaturized. In addition, the processing chamber 10 is provided with a gas supply port 24 and an exhaust port 26 respectively. The gas supply port 24 is connected to a supply pipe for flushing gas such as air or nitrogen, for example, the air supply pipe 2 8. An air supply source (not shown) supplies air into the processing chamber 10 through an air supply pipe 28. In addition, an exhaust pipe 30 is continuously connected to the exhaust port 26, and the flushing air supplied into the processing chamber 10 through the air supply pipe 28 is passed through the exhaust pipe 30 and is not shown in the figure. The vacuum exhaust pump exhausts. By appropriately adjusting and controlling the air supply flow rate in the processing chamber 10 and the exhaust flow rate in the processing chamber 10, it is possible to suppress foreign gas from entering the processing from the outside through the substrate carrying inlet 12 or the substrate carrying outlet 14. In the chamber 10, gas can be prevented from leaking out of the processing chamber 10 through the substrate carrying inlet 12 or the substrate carrying outlet 14. According to this, the internal environment and the external environment of the processing chamber 10 are isolated, and the flying water used for cleaning the pure water used or the gas that is removed from the substrate W by the air knife 18 and evaporated can be prevented from flowing out of the processing chamber 10 diffusion. Moreover, a drain port is also provided in the processing chamber 10, but its illustration is omitted. 13 312XP / Invention Specification (Supplement) / 94-04 / 93139789 200527503 Fig. 3 schematically shows a schematic structure of a substrate processing apparatus according to another embodiment of the present invention. This substrate processing apparatus includes a processing chamber 10 that is the same as the processing chamber 10 of the substrate processing apparatus shown in FIG. 1 (in FIG. 3, the components common to the substrate processing apparatus shown in FIG. 1 are also The symbols are the same as those used in FIG. 1, and the descriptions thereof are omitted. At the same time, another processing chamber 32 is provided on the upstream side of the processing chamber 10. The processing chamber 32 is also a sealed type having a substrate carrying inlet 34 and a substrate carrying outlet 36, and an etching processing unit 38 for applying an untreated process on the upper surface of the substrate W is disposed inside the processing chamber 32. A roller conveyor 22 for transporting the substrate W is arranged inside the processing chamber 32. Similarly to the processing chamber 10, the processing chamber 32 has a width equal to or larger than a dimension in a direction orthogonal to the substrate W transport direction, and a length smaller than a dimension in the substrate W transport direction. Therefore, in a state where a part of the substrate W is contained in the processing chamber 32, an etching process is performed on the containing part, and each part is sequentially passed through the processing chamber 3 when the substrate W is transported by the roller conveyor 2 2 2 and the entire surface of the substrate W is etched. In this substrate processing apparatus, two consecutive processing chambers 3 2 and 10 are used to continuously apply an etching process, an ultrasonic wave, a high-pressure jet cleaning, a water washing process, and an air knife drying process to the substrate W. However, each processing chamber 3 2 Since the lengths of 10 and 10 are smaller than the dimensions in the carrying direction of the substrate W, the entire device can be miniaturized. In addition, a gas supply port 40 and an exhaust port 42 are also provided in the processing chamber 32, respectively. The gas supply port 40 is connected to the air supply pipe 44, and the exhaust port 42 is connected to the exhaust pipe. 4 6. Next, similarly to the processing chamber 10, the supply flow rate of air in the processing chamber 32 and 14 312XP / Invention Manual (Supplement) / 94-04 / 93139789 200527503 from the processing chamber 32 are adjusted and controlled appropriately. The exhaust flow can isolate the internal environment and the external environment of the processing chamber 32. 4 and 5 are structural examples of the processing chamber. FIG. 4 is a cross-sectional view of the processing chamber along the substrate conveying direction, showing a cross-sectional view of the IV-IV arrow line of FIG. 5; and FIG. 5 is a positive view of the processing chamber in the substrate conveying direction. The cross-sectional view in the direction of the cross-section shows the cross-sectional view taken along the line V-V of FIG. 4. The processing chamber 48 is a sealed type having a substrate carrying inlet 50 and a substrate carrying outlet 52, and a processing tool 54 is disposed inside the processing chamber 48. However, the processing chamber 48 is orthogonal to the substrate W transport direction. The bottom surface and the top surface are inclined, and the substrate W is also conveyed by a roller conveyor (not shown in the figure. The same is also true for FIGS. 6 to 10) in a posture in which the orthogonal direction of the conveying direction is inclined. In addition, the processing chamber 48 has a width that is equal to or larger than the dimension orthogonal to the direction in which the substrate W is transported, and has a length that is smaller than the dimension that the substrate W is transported in the direction. Furthermore, a gas supply port 56 is provided near the high-side end of the top surface of the processing chamber 48, and an air supply pipe 5 8 is connected to the gas supply port 56 and connected to the bottom of the processing chamber 48. An exhaust / drain port 60 is provided near the side end, and an exhaust / drain pipe 62 is connected to the exhaust / drain port 60. In the processing chamber 48 having such a structure, the drain liquid flowing down to the bottom surface naturally flows to one side end side along the inclined surface, and is discharged from the exhaust / drain port 60 through the exhaust / drain pipe 62. Next, the processing chamber 64 in a cross-sectional view along the substrate conveyance direction shown in FIG. 6 is a closed type having a substrate carrying inlet 66 and a substrate carrying outlet 68. Inside the processing chamber 64, processing tools 70a and 70b are sandwiched. It is provided above and below the substrate conveying path, respectively. In addition, between the top surface of the processing chamber 64 15 312XP / Invention Specification (Supplement) / 94- (M / 93139 89 89 27 027 503) and the processing tool 7 0 a, and between the processing chamber tool 7 0 b, The partition walls 7 1 a, 7 1 b, and 7 1 b connect the inner space of the processing chamber 64 to the front and back of the processing chamber 6 4 in the substrate conveying direction through a passage formed between the opposing surfaces of the substrate W 7 1 b. On the top and bottom surfaces of the circulation room 64, gas is provided at the gas supply ports 7 2 a and 7 2 b respectively on the front side of the partition wall 7 1 a and the front side of the substrate conveying direction, and 74 a and 74 b respectively. The front surfaces of the processing chamber 64 and the bottom 7 1 b are formed in front of the substrate conveying direction at the front ports 76a, 76b, and at the exhaust ports 76a, 76b, the gas pipes 78a, 78b. In the processing chamber 64 having such a structure, In the base chamber 64, even if the internal space of the processing chamber 64 is divided into upper and lower parts such as the plate W, the air for air washing is separately supplied to the side space of the substrate conveying path, and through the exhaust pipe 7 8 a And 7 8 b exhaust air from the base space and the lower space, respectively. Adjust and control the air in the processing chamber 64 The exhaust gas flow in 64 can reliably isolate the external environment of the processing I. In addition, since the space in the processing chamber 64 flows as shown, it is attached to the surface of the processed substrate W by forming this type of airflow. Figures 7 to 10 show another structure of the processing chamber 312XP / Invention Specification (Supplement) / 94-04 / 93139789 64 and the processing workers are separated by the partition 7 1 a, s space back and forth, and processing tools 7 1 a. Path. Next, the supply ports 72a and 72b at the position where 7 1 b is formed are connected to the air supply pipe surface, and the exhaust gas is respectively connected to the side 7 1 a and the side next to the row plate W. It is carried into the processing chamber as shown in FIG. 6 and the base feeding pipes 7 4 a and 7 4 b are flushed to the upper side space and above the lower plate conveying path. The environment and atmosphere are shown in dotted lines in FIG. 6 to prevent fog (particles) reconstruction. A cross-sectional view in the direction of substrate transfer 16 200527503. The processing chamber 80 is also a closed type with a substrate transfer inlet 82 and a substrate transfer outlet 84. A processing tool 86 is provided inside the processing chamber 80, In the processing chamber 80, gas supply means and gas discharge means are disposed at the substrate transfer inlet 82 and the substrate transfer outlet 84. That is, the substrate transfer inlet 82 in the processing chamber 80 is positioned above and below the substrate transfer path. On the side, there are air exit passages 88a, 88b which are close to the substrate conveying path and open to the ground. The next pair of air exit passages 88a, 88b are connected to each other and are connected to the air supply source. (Not shown) air supply pipes 90a, 90b. In addition, the upper and lower sides sandwiching the substrate conveyance path are provided with air intake passages adjacent to the air conveyance paths 8 8 a and 8 8 b and close to the substrate conveyance path and opening above and to the ground. 92a and 92b are connected to exhaust air pipes 94a and 94b respectively connected to a vacuum exhaust pump (not shown) in the air suction passages 92a and 92b. The air discharge passages 88a, 88b and the air suction passages 9 2 a, 9 2 b are respectively provided so as to cover the entire opening width of the substrate carrying inlet 82 (the opening width in the orthogonal direction of the substrate carrying direction). Next, air for the air curtain is discharged from the air discharge passages 88a and 88b toward the substrate conveyance path from the air discharge passages, and the discharged air is sucked into the air suction passages 9 2 a and 9 2 b through the air suction port, as described later. An air curtain is formed on the substrate carrying inlet 82. In the same manner, at the substrate transfer port 8 4 of the processing chamber 80, air is provided above and below the substrate transfer path so as to approach the substrate transfer path and open above and next to the substrate. The discharge passages 96a, 9 6 b are connected to the air discharge passages 9 6 a, 9 6 b, respectively, and are connected to the circulation connection 17 312XP / Invention Manual (Supplement) / 94-04 / 93139789 200527503 Continue to the air supply source (pictured) (Not shown) of the air supply pipes 9 8 a, 9 8 b. In addition, the upper and lower sides sandwiching the substrate conveying path are provided with air intake paths adjacent to the air conveying paths 9 6 a and 9 6 b and close to the substrate conveying path and opening to the ground. 100a and 100b are connected to each of the air suction passages 100a and 100b, respectively, and the exhaust pipes 1002a and 102b connected to the vacuum exhaust pump (not shown) are connected. Although not shown in the figure, each of the air supply pipes 90a, 90b, 98a, 98b and each of the exhaust pipes 9 4 a, 9 4 b, 10 2 a, and 10 2 b is provided with opening and closing control valves, respectively. Next, the control device is used to switch and control each of the opening and closing control valves, thereby constantly forming an air curtain at the substrate carrying inlet 8 2 and the substrate carrying outlet 8 4, so that the internal environment and the external environment of the processing chamber 80 are constantly and reliably formed. Ground is isolated. This switching operation is performed as described below. First, as shown in FIG. 7, when a substrate W is present in the processing chamber 80, the substrate carrying inlet 82 and the substrate carrying outlet 8 4 in the processing chamber 80 are respectively discharged from the upper and lower air outlet passages 88a. , 88b; 96a, 96b air ejection outlets, each ejecting air toward the substrate conveying path, the ejected air bounces above and below the substrate W, and is sucked into the upper and lower pairs of air through the air intakes respectively Suction passages 92a, 92b; 100a, 100b are exhausted. As a result, air curtains are formed on the upper and lower sides of the substrate W of the substrate transfer port 82 and the substrate transfer port 84 of the processing chamber 80, respectively. Next, as shown in FIG. 8, when the substrate W does not exist in the processing chamber 80, the substrate carrying inlet 82 and the substrate carrying outlet 8 4 in the processing chamber 80 are respectively from the upper side or the lower side (as shown in the figure). The upper side in the example) is the air outlets 8 8 a, 9 6 a, and the air is discharged toward the substrate conveying path. The 18 312XP / Invention Manual (Supplement) / 94-04 / 93139789 200527503 Through the air suction port, the air is sucked into the air suction passages 9 2 b and 1 0 0 b on the lower side or the upper side (the lower side in the example in the figure) and exhausted. Accordingly, air is only discharged from the air ejection passages 8 8 a, 8 8 b of the upper and lower pairs; 96a, 96b one side of the air ejection outlets, and the air intake passages 92 a, 92 b of the upper and lower pairs; In 100a and 100b, air is sucked only in an air suction port opposite to the air discharge path, thereby forming an air curtain at the substrate carrying inlet 82 and substrate carrying outlet 84 of the processing chamber 80, respectively. As shown in FIG. 9, when the front end of the substrate W is located in the processing chamber 80, the substrate carrying inlet 82 of the processing chamber 80 discharges air from the upper and lower pairs of air discharge passages 8 8 a and 8 8 b. The outlets respectively eject air toward the substrate conveying path, and the ejected air bounces above and below the substrate W, respectively, and is sucked into the air suction passages 92a, 92b of the upper and lower pairs through the air suction ports, respectively. exhaust. Accordingly, air curtains are formed on the upper and lower sides of the substrate W of the substrate carrying inlet 82 of the processing chamber 80, respectively. On the other hand, in the substrate carrying-out port 84 of the processing chamber 80, air is discharged toward the substrate carrying path from the air-outlet port 9 6a of the upper or lower side (upper side in the example of the figure). The discharged air is sucked into the air suction passage 1 0 0 b of the lower side or the upper side (the lower side in the example of the figure) through the air suction port and is exhausted. Accordingly, an air curtain is formed at the substrate carrying port 84 of the processing chamber 80. In addition, as shown in FIG. 10, when the rear end of the substrate W is located in the processing chamber 80, the substrate carrying inlet 82 in the processing chamber 80 is from the upper side or the lower side (the upper side in the example in the figure). The air outlet of the air discharge passage 8 8 a is discharged toward the substrate conveying path toward 19 312XP / Invention Manual (Supplement) / 94-04 / 93139789 200527503, and the discharged air is sucked into the lower side through the air suction port. Or the air on the upper side (the lower side in the example shown in the figure) is sucked into the passage 9 2 b and exhausted. Accordingly, an air curtain is formed in the substrate carrying-in port 82 of the processing chamber 80. On the other hand, at the substrate transfer port 84 of the processing chamber 80, air is respectively discharged from the air discharge ports of the upper and lower pairs of air discharge paths 96a and 96b toward the substrate transfer path, and each of the discharged air is above the substrate W It bounces back and down respectively, and is sucked into the air suction passages 1 0 a and 1 0 b of the upper and lower pairs through the air absorption ports and exhausted. As a result, air curtains are formed on the upper and lower sides of the substrate ... in the substrate carrying port 84 of the processing chamber 80, respectively. In the description of each of the above-mentioned embodiments, the processing chambers 10, 3, 2, 4, 8, 6, 4, and 80 are fixed to carry the substrate W, but the processing chamber and the substrate may be moved relatively to carry out the substrate. Its processing. The apparatus of the schematic diagram shown in Fig. 11 (a) is a method of fixing the processing chamber 106 in which the processing tool 104 is disposed inside the substrate W, as in the substrate processing apparatus of each of the above embodiments. In the apparatus shown in FIG. 11 (b), the substrate W is fixed, and the processing chamber 106 is relatively moved with respect to the substrate W. The device shown in FIG. 11 (c) moves the substrate W and the processing chamber 106 in the same direction respectively, so that the moving speed of the processing chamber 106 is slower than that of the substrate W. Alternatively, the substrate W and the processing chamber 106 may be moved in mutually opposite directions. The device shown in FIG. 11 (d) is a process chamber 106a provided with a processing tool 104a and a processing chamber 106b provided with a processing tool 104b are continuously disposed and fixed in a substrate conveying direction, and the processing chambers 1 to 6 a 1, 10 6 b Structure example of the substrate W. Of course, similar to FIG. 1 (b) or (c), the substrate W can also be fixed, so that it can be used 20 312XP / Invention Specification (Supplement) / 94-04 / 93139789 200527503 Management Room 1 0 6 a, 1 0 6 b is moved relative to the substrate W, or the processing chambers 10 6 a and 10 6 b are moved at a slower speed than the substrate conveyance speed, and are moved in the same direction as the substrate W. In addition, the device shown in FIG. 11 (e) fixes the processing chambers 1 10 arranged with processing tools 1 0 8 a and 1 0 8 b above and below the substrate conveying path sandwiching the substrate. An example of a structure in which the chamber 110 conveys the substrate W. Of course, as in FIG. 1 (b) or (c), the substrate W may be fixed, the processing chamber 1 10 may be moved relative to the substrate W, or the processing chamber 1 10 may be slower than the substrate transfer speed. The speed moves in the same direction as the substrate W. [Brief Description of the Drawings] Fig. 1 shows an example of an embodiment of the present invention, and is a view schematically showing a schematic structure of a substrate processing apparatus. FIG. 2 is a schematic plan view of a processing chamber of the substrate processing apparatus shown in FIG. 1. FIG. Fig. 3 is a diagram schematically showing a schematic structure of a substrate processing apparatus according to another embodiment of the present invention. Fig. 4 shows a configuration example of a processing chamber of the substrate processing apparatus of the present invention, which is a cross-sectional view of the processing chamber along the substrate conveying direction, and is a cross-sectional view taken along the line I V-IV of the arrow in Fig. 5. Fig. 5 is a cross-sectional view in a direction orthogonal to a substrate conveyance direction of the processing chamber shown in Fig. 4, and is a cross-sectional view taken along a line V-V of Fig. 4. Fig. 6 is a cross-sectional view showing another example of the structure of the processing chamber of the substrate processing apparatus of the present invention along the substrate conveyance direction. Fig. 7 is a cross-sectional view showing another example of the structure of the processing chamber of the substrate processing apparatus of the present invention, taken along the substrate conveying direction. Fig. 8 is also a sectional view of the processing chamber, showing a state different from the state shown in Fig. 7 as 21 312XP / Invention Specification (Supplement) / 94-04 / 93139789 200527503. Fig. 9 is also a sectional view of the processing chamber, showing a state different from the state shown in Figs. 7 and 8. Fig. 10 is also a sectional view of the processing chamber, showing that the states shown in Figs. 7 to 9 are different states. Figures 11 (a) to (e) are schematic diagrams showing the relative movement of the substrate and the processing chamber, respectively. [Description of main component symbols] W substrates 10, 32, 48, 64, 80, processing chambers 106, 106a, 106b, 110 12, 34, 50, 66, 82 substrate carrying inlets 14, 36, 52, 68, 84 substrate carrying Outlet 16 Processing tool (ultrasonic, high pressure jet cleaning, water washing processing section) 18 Processing tool (air knife drying processing section) 2 0, 2 2 Roller conveyor 24, 40, 56, 72a, 72b Gas supply port 2 6, 4 2, 7 6 a, 7 6 b Exhaust ports 28, 44, 58, 74a, 74b Air supply pipes, 90a, 90b, 98a, 98b 30, 46, 78a, 78b, 94a Exhaust pipes 94b, 102a, 102b 38 Etching processing unit 54, 70a, 70b, 86, 104 Processing tools 104a, 104b, 108a, 108b 60 Exhaust and discharge port 6 2 Exhaust and discharge pipe 22 312XP / Invention Manual (Supplement) / 94-04 / 93139789 88a, 92a, 200527503 88b, 96a, 96b air discharge passage 92b, 100a, 100b air suction passage
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