KR100731420B1 - Apparatus for processing a substrate - Google Patents

Abstract

Provided is a device having a configuration in which a processing tool has a chamber disposed therein, which can reduce the size of the device and reduce the amount of processing liquid used.

A hermetically sealed chamber 10 having a substrate inlet 12 and a substrate outlet 14, processing tools 16, 18 disposed inside the chamber, and a roller conveyor 20 for conveying the substrate W. The length of a chamber is made smaller than the dimension in a board | substrate conveyance direction. An air supply pipe 28 for supplying the purge air into the chamber and an exhaust pipe 30 for exhausting the purge air from the chamber are provided to repel the internal and external atmospheres of the chamber.

Description

Substrate Processing Unit {APPARATUS FOR PROCESSING A SUBSTRATE}

BRIEF DESCRIPTION OF THE DRAWINGS The figure which shows an example of embodiment of this invention, and shows a schematic structure of a substrate processing apparatus typically,

2 is a schematic plan view of the chamber of the substrate processing apparatus shown in FIG. 1;

3 is a diagram schematically showing a schematic configuration of a substrate processing apparatus according to another embodiment of the present invention;

4 is a schematic view showing another embodiment of the present invention, which forms one of the constituent units of the substrate processing apparatus;

FIG. 5 is a cross-sectional view showing a configuration example of a chamber of the substrate processing apparatus according to the present invention, and is taken along the substrate conveyance direction of the chamber, and is a sectional view seen from the arrow IV-IV in FIG. 5;

FIG. 6 is a cross-sectional view in a direction orthogonal to the substrate conveyance direction of the chamber shown in FIG. 5, and is a cross-sectional view seen from the V-V arrow direction in FIG. 4;

7 is a cross-sectional view along a substrate conveyance direction showing another configuration example of a chamber of the substrate processing apparatus according to the present invention;

FIG. 8 is a cross-sectional view of the chamber in the same manner, showing a state different from that shown in FIG.

FIG. 9 is a cross-sectional view of the same chamber, showing a state different from that shown in FIGS. 7 and 8;

FIG. 10 is a cross-sectional view of the same chamber, showing a state different from that shown in FIGS. 7 to 9;

11 (a) to 11 (e) are schematic diagrams each illustrating aspects of relative movement between the substrate and the chamber.

<Description of the symbols for the main parts of the drawings>

W: Substrate

10, 32, 48, 64, 80, 106, 106a, 106b, 110: chamber

12, 34, 50, 66, 82: substrate inlet of the chamber

14, 36, 52, 68, 84: substrate outlet of the chamber

16: Ultrasonic, high pressure jet washing, water washing processing part

18: air knife drying treatment unit

20, 22: roller conveyor

24, 40, 56, 72a, 72b: gas supply port

26, 42, 76a, 76b: exhaust vent

28, 44, 58, 74a, 74b, 90a, 90b, 98a, 98b: air supply pipe

30, 46, 78a, 78b, 94a, 94b, 102a, 102b: exhaust pipe

38: etching treatment unit

54, 70a, 70b, 86, 104, 104a, 104b, 108a, 108b: processing tools

60: exhaust / drain

62: exhaust / drain pipe

88a, 88b, 96a, 96b: air discharge passage

92a, 92b, 100a, 100b: air intake passage

The present invention, while conveying a substrate such as a semiconductor wafer, a glass substrate for flat panel display (FPD), a glass substrate for a photomask, a printed substrate, ultrasonic wave, high pressure jet washing treatment, water washing treatment, air knife drying treatment, etching treatment, The present invention relates to a substrate processing apparatus that performs various processes such as development treatment, peeling treatment, and the like on a substrate.

When wet treatments such as ultrasonic and high pressure jet cleaning treatments, water washing treatment, and etching treatments are performed on substrates such as semiconductor wafers and FPD glass substrates, processing tools such as ultrasonic and high pressure jet cleaning apparatuses, water washing apparatuses, and etching apparatuses may be used. A substrate processing apparatus having a chamber disposed therein is used. And while conveying a board | substrate by a conveyance mechanism, such as a roller conveyor, chemical liquids, such as pure water and etching liquid, are supplied to a board | substrate in a chamber, and a predetermined process is performed with respect to a board | substrate. In this way, the substrate is wet-processed in the chamber while being conveyed in the chamber. For this reason, the chamber is equal to or larger than the size of the substrate in plan view.

Moreover, the substrate processing apparatus provided with the processing tool which does not have a chamber and whose dimension in a board | substrate conveyance direction is smaller than a board | substrate is proposed. That is, a discharge passage having an introduction passage having an introduction port for introducing the processing liquid at one end and a discharge opening for discharging the wet processing liquid after the wet treatment at one end is formed, and the introduction passage and the discharge passage are respectively formed. A substrate processing apparatus comprising a processing tool comprising a nozzle structure having an intersection portion formed at the other end and intersecting the opening portion and having an opening portion opened at the intersection portion, wherein the processing tool has a dimension in the substrate conveyance direction smaller than the substrate. An apparatus has been proposed (see, for example, Japanese Unexamined Patent Publication No. 163153).

In the substrate processing apparatus provided with the chamber in which the processing tool is arrange | positioned inside, according to enlargement of the size of a board | substrate, a chamber becomes large and the whole apparatus enlarges. For example, in the apparatus which performs an etching process, it is necessary to extend an etching process chamber, a water washing process chamber, and a drying process chamber to the conveyance direction of a board | substrate, and the whole apparatus becomes large and occupies the inside of a clean room. Since the space becomes large, the manufacturing cost of the device is also expensive. In addition, there is a problem that the amount of chemical liquid or pure water also increases as the chamber is enlarged.

On the other hand, a substrate processing apparatus having a processing tool smaller than a substrate without a chamber is advantageous in terms of installation space and manufacturing cost, and the amount of chemical liquid and pure water is reduced, but the chemical liquid or pure water flows out of the discharge passage. Means and controls for preventing scattering are necessary, and the device configuration and control mechanism are complicated. Moreover, there exists a possibility that the droplet of a process liquid and evaporation gas may diffuse from the opening part of a nozzle structure to an ambient atmosphere.

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and has a configuration in which a processing tool is provided with a chamber disposed therein, whereby the apparatus can be miniaturized, and the amount of processing liquid used can be reduced. Since the structure is provided with a chamber, it is an object to provide a substrate processing apparatus which can easily prevent the outflow and scattering of the processing liquid and does not have the possibility of splashing of the processing liquid or evaporating gas into the surrounding atmosphere.

The invention according to claim 1 includes a hermetic chamber having a substrate inlet and a substrate outlet, a processing tool disposed inside the chamber to perform a predetermined process with respect to the substrate, and a movement for moving the substrate relative to the processing tool. A substrate processing apparatus provided with means, wherein the width of the chamber is equal to or larger than the dimension in the direction orthogonal to its relative moving direction of the substrate, and the length of the chamber is determined by the relative moving direction of the substrate. Gas supply means for supplying a purge gas into the chamber so as to move the chamber and the substrate on which the processing tool is disposed to be relatively smaller than the dimensions and to repel the internal atmosphere and the external atmosphere of the chamber (for purging) Gas supply means) and gas discharge means (exhaust means) for exhausting the purge gas from the chamber. It is characterized in that each provided in the upper space and the lower space of the furnace.

The invention according to claim 2 includes a hermetic chamber having a substrate inlet and a substrate outlet, a processing tool disposed inside the chamber to perform a predetermined process with respect to the substrate, and a movement for moving the substrate relative to the processing tool. A substrate processing apparatus provided with means, wherein the width of the chamber is equal to or larger than the dimension in the direction orthogonal to its relative moving direction of the substrate, and the length of the chamber is determined from the relative moving direction of the substrate. In order to reduce the internal atmosphere and the external atmosphere of the chamber so as to relatively move the chamber and the substrate on which the processing tool is disposed so as to be smaller than the dimension of, the relative path of the substrate is interposed between the substrate inlet of the chamber. And are respectively disposed on the upper side and the lower side thereof, and each has a gas discharge port that is opposed to the relative movement path of the substrate. A pair of upper and lower inlet gas discharge means for discharging the gas for curtain from the gas discharge port toward the relative movement path of the substrate, and the upper and lower sides of the substrate through the relative movement path of the substrate at the substrate exit of the chamber; A pair of upper and lower outlet gas discharges disposed on the lower side, each having a gas discharge port facing the relative movement path of the substrate and discharging the gas for the curtain from the gas discharge port toward the relative movement path of the substrate, respectively. A gas supply means composed of a means and a gas inlet respectively disposed on an upper side and a lower side of the chamber at the inlet of the chamber with the relative movement path between the substrates interposed therebetween and facing the relative movement path of the substrate, respectively. A pair of upper and lower inlet side gas suction means for sucking the gas for curtain through the gas inlet, and the substrate outlet of the chamber It is disposed on the upper side and the lower side, respectively, with the relative paths of the plates interposed therebetween, and each has a gas inlet that is opposed to the relative path of the substrate, respectively. And a gas discharge means composed of a pair of outlet side gas suction means.

In the invention according to claim 3, in the substrate processing apparatus according to claim 2, when the substrate is present at the substrate inlet of the chamber, the upper and lower pair of inlet-side gas discharge means and the upper and lower pairs of inlet side When each of the gas suction means is operated, and the substrate is present at the substrate exit of the chamber, the upper and lower pair of outlet gas discharge means and the upper and lower pair of outlet gas suction means are operated respectively, When no substrate is present at the substrate inlet of the chamber, the upper or lower inlet gas discharging means and the lower or upper inlet gas suction means are operated respectively, and the substrate is placed at the substrate outlet of the chamber. When not present, the upper or lower outlet gas discharging means and the lower or upper outlet gas suction means are respectively operated. A switching means for switching is provided.

The invention according to claim 4 is the substrate processing apparatus according to any one of claims 1 to 3, wherein a plurality of the chambers are connected in a relative moving direction of the substrate.

With reference to FIGS. 1-11, the preferable aspect for implementing this invention is demonstrated.

FIG. 1: is a figure which shows an example of embodiment of this invention, and shows schematic structure of a substrate processing apparatus typically.

This substrate processing apparatus is equipped with the hermetically sealed chamber 10 which has the board | substrate delivery opening 12 and the board | substrate carrying out opening 14. As shown in FIG. Inside the chamber 10, an ultrasonic wave, a high pressure jet cleaning, a water washing processing unit 16, and an air knife drying processing unit 18 are disposed as processing tools for performing a predetermined process on the substrate W. As shown in FIG. The ultrasonic wave, high-pressure jet washing and washing treatment part 16 and the air knife drying process part 18 are provided in the upper side and the lower side, respectively, through the conveyance path of the board | substrate W. Moreover, the roller conveyor 20 for carrying in the board | substrate W into the chamber 10, conveying in the chamber 10, and carrying out from the chamber 10 is provided.

As shown in the schematic plan view in FIG. 2, the chamber 10 has a width equal to or larger than the dimension in the direction orthogonal to the conveying direction of the substrate W, and the length thereof is the substrate W. FIG. It is smaller than the dimension in the conveyance direction of the. For this reason, the board | substrate W is a state accommodated in the chamber 10, and ultrasonic wave, high pressure jet washing, water washing process, and air knife drying process are performed with respect to the accommodating part. And the board | substrate W is conveyed by the roller conveyor 20, each part passes through the inside of the chamber 10 sequentially, and the board | substrate W passes through the inside of the chamber 10, and complete | finishes the board | substrate, Processing for the entire surface of (W) ends. Thus, the planar shape of the chamber 10 becomes smaller than the board | substrate W, and the whole apparatus can be miniaturized.

The chamber 10 is provided with a gas supply port 24 and an exhaust port 26, respectively, and the gas supply port 24 provides a supply pipe for purging gas such as air or nitrogen gas, for example, an air supply pipe. 28 is connected, and air is supplied into the chamber 10 through the air supply pipe 28 from the air supply source which is not shown in figure. Moreover, the exhaust pipe 30 is connected to the exhaust port 26, and the air for purge supplied into the chamber 10 through the air supply pipe 28 is exhaust pipe 30 by the vacuum exhaust pump which is not shown in figure. It is to be exhausted through. Then, by appropriately adjusting and controlling the supply flow rate of the air into the chamber 10 and the exhaust flow rate from the inside of the chamber 10, the substrate inlet 12 and the substrate outlet 14 are moved from the outside into the chamber 10. Ingress of outside air is suppressed, and leakage of gas through the substrate inlet 12 and the substrate outlet 14 from the chamber 10 to the outside is suppressed. As a result, the internal atmosphere and the external atmosphere of the chamber 10 are separated from each other, and the gas evaporated and removed from the substrate W by the droplet of pure water or the air knife 18 used for cleaning is evaporated. 10) It is prevented from spreading outside. In addition, although the drain port is provided in the chamber 10, the illustration is abbreviate | omitted.

3 is a diagram schematically showing a schematic configuration of a substrate processing apparatus according to another embodiment of the present invention. This substrate processing apparatus has the same code | symbol used in FIG. 1 as the structural member common to the chamber 10 (the same as the chamber 10 in the substrate processing apparatus shown in FIG. 1). And the description thereof is omitted), and another chamber 32 is provided on the upstream side of the chamber 10. As shown in FIG. The chamber 32 is also a sealed type having a substrate inlet 34 and a substrate outlet 36. An etching processing unit 38 for etching the upper surface of the substrate W is provided inside the chamber 32. It is arranged. Moreover, inside the chamber 32, the roller conveyor 22 for conveying the board | substrate W is arrange | positioned.

Similar to the chamber 10, the chamber 32 also has a width equal to or larger than the dimension in the direction orthogonal to the conveyance direction of the substrate W, and the length thereof in the conveyance direction of the substrate W. It is smaller than the dimension. For this reason, the board | substrate W is a state accommodated in the chamber 32, the etching process is performed with respect to the accommodating part, the board | substrate W is conveyed by the roller conveyor 22, and each part is sequentially chambered. By passing through (32), the etching process is performed with respect to the whole surface of the board | substrate W. As shown in FIG. In this substrate processing apparatus, although the etching process, the ultrasonic wave, the high pressure jet washing, the water washing process, and the air knife drying process are performed continuously with respect to the board | substrate W by the two connected chambers 32 and 10, each chamber 32, Since the length of 10) becomes smaller than the dimension in the conveyance direction of the board | substrate W, respectively, the whole apparatus can be miniaturized.

In the chamber 32, a gas supply port 40 and an exhaust port 42 are provided, respectively, and an air supply pipe 44 is connected to the gas supply port 40, and an exhaust pipe 46 is connected to the exhaust port 42. ) Is in communication. Similarly to the chamber 10, the internal and external atmosphere of the chamber 32 can be reconciled by appropriately controlling and controlling the supply flow rate of the air into the chamber 32 and the exhaust flow rate from the inside of the chamber 32. It is supposed to be.

4 and 5 show an example of the configuration of the chamber, FIG. 4 is a view along the substrate conveyance direction of the chamber, showing a view seen from the IV-IV arrow direction in FIG. 5, and FIG. 5 is a substrate conveyance of the chamber. As sectional drawing in the direction orthogonal to a direction, sectional drawing seen from the VV arrow direction of FIG. 4 is shown.

The chamber 48 is a hermetic type having a substrate inlet 50 and a substrate outlet 52. The processing tool 54 is disposed inside the chamber 48, but the chamber 48 is a substrate W. As shown in FIG. Bottom surface and ceiling surface are inclined in the direction orthogonal to the conveying direction of the sheet), and the substrate W is also inclined by the roller conveyor (not shown, the same also in FIGS. 6 to 10) in the direction orthogonal to the conveying direction. It is supposed to be conveyed. The chamber 48 also has a width equal to or larger than the dimension in the direction orthogonal to the conveyance direction of the substrate W, and the length thereof becomes smaller than the dimension in the conveyance direction of the substrate W. have. In addition, a gas supply port 56 is provided in the chamber 48 near the raised side end of the ceiling surface, and an air supply pipe 58 is connected to the gas supply port 56 so as to communicate with the chamber 48. The exhaust / drainage port 60 is provided in the vicinity of the lower side end of the bottom of the bottom face), and the exhaust / drainage tube 62 is connected to the exhaust / drainage port 60. In the chamber 48 having such a structure, the drainage flowed down to the bottom surface naturally flows to one side along the slope, and is discharged from the exhaust / drainage port 60 through the exhaust / drainage tube 62.

Next, the chamber 64 which shows the sectional drawing along the board | substrate conveyance direction in FIG. 6 is the airtight type which has the board | substrate delivery opening 66 and the board | substrate carrying out opening 68, The board | substrate conveyance path inside the chamber 64 is shown. The processing tools 70a and 70b are disposed above and below, respectively. Moreover, partition walls 71a and 71b are provided between the ceiling surface of the chamber 64 and the processing tool 70a, and between the bottom surface of the chamber 64 and the processing tool 70b, respectively. The internal space of the chamber 64 is divided back and forth in the board | substrate conveyance direction by 71a and 71b, and the internal space before and after that is formed between the opposing surface of the board | substrate W and the processing tool 71a, 71b. The passage communicates through the passage. And the gas supply ports 72a and 72b are respectively provided in the ceiling surface and the bottom surface of the chamber 64 in the front side of a board | substrate conveyance direction rather than the formation position of the partition walls 71a and 71b, and each gas supply port 72a is provided. Air supply pipes 74a and 74b are connected to 72b respectively. Moreover, the exhaust ports 76a and 76b are provided in the ceiling surface and the bottom surface of the chamber 64 just in front of the board | substrate conveyance direction from the formation position of partition 71a, 71b, respectively, and each exhaust port 76a, 76b is provided. The exhaust pipes 78a and 78b are connected to each other.

In the chamber 64 having such a configuration, even if the substrate W is loaded into the chamber 64 and the internal space of the chamber 64 is divided up and down on the substrate W as shown in FIG. 6. The purge air is separately supplied to the upper space and the lower space of the substrate transport path through the air supply pipes 74a and 74b, respectively, and the air is exhausted from the upper space and the lower space of the substrate transport path. Through 78a and 78b, it is exhausted separately. Therefore, by appropriately adjusting and controlling the supply flow rate of the air into the chamber 64 and the exhaust flow rate from the inside of the chamber 64, the internal atmosphere and the external atmosphere of the chamber 64 can be reliably reduced. Moreover, since air flows in the chamber 64 as shown by the dotted line in FIG. 6, by forming such airflow, the mist (particle) is prevented from reattaching to the surface of the board | substrate W which was processed. .

7-10 is sectional drawing along the board | substrate conveyance direction which shows the other structural example of a chamber. Although the chamber 80 is also a sealed type having a substrate inlet 82 and a substrate outlet 84, the processing tool 86 is arranged inside the chamber 80, but the substrate 80 is provided with a substrate. Gas supply means and gas discharge means are disposed at the delivery port 82 and the substrate delivery port 84, respectively.

That is, a pair of upper and lower air discharge passages in which the air discharge port is opened so as to face the substrate transfer path in the upper side and the lower side thereof with the substrate transfer path interposed between the substrate loading ports 82 of the chamber 80. 88a and 88b are formed, and the air supply pipes 90a and 90b connected to the air supply source (not shown) in the flow paths are connected to each of the air discharge passages 88a and 88b, respectively. In addition, the upper and lower pairs of air intake passages in which the air inlets are opened so as to be adjacent to the substrate conveyance paths adjacent to the air discharge passages 88a and 88b on the upper side and the lower side with the substrate conveyance paths interposed therebetween. 92a and 92b are formed, and exhaust pipes 94a and 94b connected to flow paths to vacuum exhaust pumps (not shown) are connected to the air intake passages 92a and 92b, respectively. The air discharge passages 88a and 88b and the air suction passages 92a and 92b are disposed over the entirety of the opening width (opening width in the direction orthogonal to the substrate conveyance direction) of the substrate delivery port 82, respectively. And the air for curtain is discharged from the air discharge passage 88a, 88b toward the board | substrate conveyance path from the air discharge port, and the discharged air is sucked into the air suction passage 92a, 92b through the air intake port, As described later, an air curtain is formed at the substrate inlet 82.

Similarly, the upper and lower pairs of the upper and lower pairs of the air ejection openings opened in the upper and lower sides of the chamber 80 with the substrate transport paths facing each other near the substrate transport path. Air discharge passages 96a and 96b are formed, and air supply pipes 98a and 98b connected to an air supply source (not shown) are connected to each of the air discharge passages 96a and 96b, respectively. In addition, the upper and lower pairs of air intake passages of which an air inlet is opened so as to be adjacent to the substrate conveyance paths adjacent to the air discharge passages 96a and 96b on the upper side and the lower side with the substrate conveyance paths interposed therebetween. 100a and 100b are formed, and exhaust pipes 102a and 102b connected to each of the air intake passages 100a and 100b are connected to a vacuum exhaust pump (not shown), respectively.

Although not shown, open / close control valves are fitted into the air supply pipes 90a, 90b, 98a and 98b and the exhaust pipes 94a, 94b, 102a and 102b, respectively. And by switching and controlling each open / close control valve by a control apparatus, an air curtain is always formed in the board | substrate delivery opening 82 and the board | substrate delivery opening 84, and the internal atmosphere and the external atmosphere of the chamber 80 are always It is configured to be surely isolated. This switching operation is performed as follows.

First, as shown in FIG. 7, when the substrate W is present in the chamber 80, a pair of upper and lower pairs are respectively provided at the substrate inlet 82 and the substrate outlet 84 of the chamber 80. Air is discharged from the air discharge ports of the air discharge passages 88a, 88b; 96a, 96b toward the substrate transfer path, respectively, and each discharged air is popped up from the upper and lower surfaces of the substrate W, respectively. The air is sucked into and discharged from the air intake ports into the lower pair of air intake passages 92a, 92b: 100a, 100b, respectively. Thereby, the air curtain is formed in the upper and lower both sides of the board | substrate W in the board | substrate delivery opening 82 and the board | substrate export opening 84 of the chamber 80, respectively.

Next, as shown in FIG. 8, when the substrate W does not exist in the chamber 80, the upper side or at the substrate inlet 82 and the substrate outlet 84 of the chamber 80, respectively. Air is discharged toward the substrate conveyance path from the air discharge ports of the air discharge passages 88a and 96a on the lower side (the upper side in the example), and the discharged air is the lower side or the upper side (the lower side in the illustrated example). Is sucked into the air suction passages 92b and 100b through the air suction port and exhausted. Thus, air is discharged from the air discharge port of only one side of the upper and lower pair of air discharge passages 88a, 88b; 96a, 96b, and the upper and lower pair of air suction passages 92a, 92b; 100a, Air curtain is formed in the board | substrate delivery opening 82 and the board | substrate delivery opening 84 of the chamber 80 by suctioning air in the air intake port of only the side which opposes the air discharge passage in which air is discharged.

In addition, as shown in FIG. 9, when the front-end | tip of the board | substrate W is located in the chamber 80, the pair of upper and lower air discharge passages 88a is carried out at the board | substrate entrance opening 82 of the chamber 80. Moreover, as shown in FIG. Air is discharged from the air discharge port of the 88b toward the substrate transfer path, and each discharged air is popped up from the upper and lower surfaces of the substrate W, respectively, and the upper and lower pairs of air suction passages 92a 92b) are respectively sucked through the air inlet and exhausted. As a result, air curtains are formed on both upper and lower sides of the substrate W at the substrate inlet 82 of the chamber 80. On the other hand, in the board | substrate carrying out port 84 of the chamber 80, air is discharged toward the board | substrate conveyance path from the air discharge port of the air discharge passage 96a of the upper side or the lower side (upper side in a figure example), The discharge The given air is sucked into the air suction passage 100b on the lower side or the upper side (lower side in the illustrated example) through the air suction port and exhausted. As a result, an air curtain is formed at the substrate discharge port 84 of the chamber 80.

10, when the rear end of the board | substrate W is located in the chamber 80, the upper side or the lower side (in the example of illustration, upper side) in the board | substrate delivery opening 82 of the chamber 80. Moreover, as shown in FIG. Air is discharged from the air discharge port of the air discharge passage 88a of the air toward the substrate transfer path, and the discharged air is introduced into the air suction passage 92b of the lower side or the upper side (the lower side in the illustrated example). Is sucked through and exhausted. As a result, an air curtain is formed at the substrate inlet 82 of the chamber 80. On the other hand, in the board | substrate export outlet 84 of the chamber 80, air is discharged toward the board | substrate conveyance path from the air discharge port of a pair of upper and lower air discharge passages 96a and 96b, respectively, and each discharged air is The upper surface and the lower surface of the substrate W respectively protrude, and are sucked and exhausted through the air inlets into the upper and lower pairs of air suction passages 100a and 100b, respectively. As a result, air curtains are formed on both upper and lower surfaces of the substrate W at the substrate discharging port 84 of the chamber 80, respectively.

In the above-described embodiments, the chambers 10, 32, 48, 64, 80 are fixed and the substrate W is conveyed, but the chamber and the substrate are relatively moved so that the substrate is processed. Just do it. In the apparatus shown schematically in FIG. 11A, like the substrate processing apparatus according to the above embodiments, the chamber 106 in which the processing tool 104 is disposed is fixed, and the substrate W is fixed. It was to return. In the apparatus shown in FIG. 11B, the substrate W is fixed to move the chamber 106 relative to the substrate W. As shown in FIG. In the apparatus shown in FIG. 11C, the substrate W and the chamber 106 are moved in the same direction, respectively, so that the moving speed of the chamber 106 is lower than the conveyance speed of the substrate W. As shown in FIG. In addition, the substrate W and the chamber 106 may be moved in opposite directions, respectively. In the apparatus shown in FIG. 11D, the chamber 106a in which the processing tool 104a is disposed and the chamber 106b in which the processing tool 104b is disposed are connected and fixed in the substrate conveyance direction, and those chambers ( It is an example of a structure which conveys the board | substrate W with respect to 106a, 106b. Of course, similarly to (b) and (c) of FIG. 11, the substrate W is fixed to move the chambers 106a and 106b relative to the substrate W, or the chambers 106a and 106b are moved to the substrate ( You may make it move at a speed slower than a board | substrate conveyance speed in the same direction as W). Moreover, the apparatus shown in FIG. 11E fixes the chamber 110 in which the processing tools 108a and 108b were arrange | positioned above and below each other with the board | substrate conveyance path between, and the chamber 110 is carried out. It is a structural example which conveyed the board | substrate W with respect to. Of course, similarly to (b) and (c) of FIG. 11, the substrate W is fixed to move the chamber 110 with respect to the substrate W, or the chamber 110 is the same as the substrate W. FIG. You may make it move in a direction slower than a board | substrate conveyance speed.

In the substrate processing apparatus of each invention of Claim 1 and 2, the processing tool which performs a predetermined process with respect to a board | substrate is arrange | positioned inside the hermetically sealed chamber, and the internal atmosphere and external atmosphere of a chamber are a gas supply means and a gas discharge means. Since it can be repelled by, the outflow and scattering of the processing liquid can be easily prevented, and the splash of the processing liquid into the surrounding atmosphere and the diffusion of the evaporation gas can also be prevented. On the other hand, since the length of the chamber is smaller than the dimension in the relative movement direction of the substrate, and the chamber and the substrate are relatively moved, the apparatus can be miniaturized, and space can be saved and cost can be reduced. At the same time, the amount of the processing liquid used can also be reduced.

 In the substrate processing apparatus of the invention according to claim 1, the gas for purging is supplied into the hermetically sealed chamber by a gas supply means (gas supply means for purging), whereby the intrusion of gas into the chamber from the outside is suppressed and the gas is discharged. The gas for purge is exhausted from the chamber by the means (exhaust means), so that leakage of gas from the chamber to the outside is suppressed. As a result, the internal atmosphere and the external atmosphere of the chamber can be intensified. Further, in the substrate processing apparatus of the present invention according to claim 1, even if the substrate moves relatively in the chamber and the internal space of the chamber is divided up and down on the substrate, the gas supply means and the gas discharge means are relative to the substrate. By being provided in the upper space and the lower space of a movement path, respectively, the internal atmosphere and external atmosphere of a chamber can be reliably fought off.

Further, in the substrate processing apparatus of the invention according to claim 2, the curtain gas is discharged from the gas discharge ports of the inlet gas discharge means and the outlet gas discharge means toward the relative movement path of the substrate, respectively, and at the inlet gas suction means. And the curtain gas is sucked through each gas inlet of the outlet gas suction means, so that a curtain of gas is formed at the substrate inlet and the substrate outlet of the chamber, respectively. As a result, the internal atmosphere and the external atmosphere of the chamber can be intensified. Further, in the substrate processing apparatus of the present invention according to claim 2, even when the substrate is relatively moved with respect to the chamber, and the substrate inlet or the substrate outlet of the chamber is divided up and down from the substrate, the gas discharge means on the inlet side and the outlet side, and The gas inlet means on the inlet side and the outlet side are provided on the upper side and the lower side, respectively, with the relative movement paths of the substrates interposed therebetween, so that the internal atmosphere and the external atmosphere of the chamber can be reliably removed.

In the substrate processing apparatus of the present invention according to claim 3, when no substrate is present in the chamber, the gas discharge port of the gas discharge means on the upper side or the lower side is moved toward the relative movement path of the substrate at the substrate inlet and the substrate outlet of the chamber, respectively. At the same time as the curtain gas is discharged, the curtain gas is sucked through the gas suction port of the lower or upper gas suction means, thereby forming a curtain of the gas.

When a part of the substrate moves relatively in the chamber, and there is a substrate at the substrate inlet of the chamber and no substrate at the substrate outlet, at the substrate inlet of the chamber, a gas discharge port of a pair of upper and lower inlet gas discharge means is provided. Curtain gas is discharged toward the relative movement path of a board | substrate from each, and each curtain gas protrudes from the upper surface and the lower surface of a board | substrate, respectively, and is inhaled through the gas inlet of a pair of upper and lower inlet side gas suction means, respectively. As a result, a gas curtain is formed on both upper and lower surfaces of the substrate. On the other hand, at the substrate outlet of the chamber, the curtain gas is discharged from the gas discharge port of the upper side or the lower side gas discharge means toward the relative movement path of the substrate, and at the same time, the outlet side gas suction means of the lower side or the upper side When the curtain gas is sucked through the gas inlet, a curtain of gas is formed.

When the substrate is relatively moved in the chamber and the substrate is present at the substrate inlet and the substrate outlet of the chamber, the relative movement path of the substrate from the gas discharge ports of the pair of gas discharge means, at the substrate inlet and the substrate outlet of the chamber, respectively. The curtain gas is discharged toward the surface of the substrate, and the curtain gas is popped up from the upper and lower surfaces of the substrate, respectively, and sucked through the gas inlets of the upper and lower pairs of gas suction means. A gas curtain is formed on each side.

When the substrate is not present at the substrate inlet of the chamber and the substrate is present at the substrate outlet, for the curtain from the gas inlet of the upper or lower inlet side gas ejection means toward the relative movement path of the substrate at the substrate inlet of the chamber. While the gas is discharged, the curtain gas is sucked through the gas suction port of the inlet side gas suction means on the lower side or the upper side, thereby forming a curtain of the gas. On the other hand, at the substrate exit of the chamber, the curtain gas is discharged from the gas discharge ports of the upper and lower pair of gas discharge means toward the relative movement path of the substrate, and each curtain gas is discharged from the upper and lower surfaces of the substrate. Each of them is popped up and sucked through the gas inlets of the pair of upper and lower outlet gas suction means, so that a curtain of gas is formed on both upper and lower sides of the substrate.

By the above-described action, the internal atmosphere and the external atmosphere of the chamber can be reliably distilled at all times.

In the substrate processing apparatus of the present invention according to claim 4, a plurality of kinds of treatments, for example, etching treatments, water washing treatments, and drying treatments are successively performed on a substrate by a plurality of connected chambers. And since the length of each chamber is smaller than the dimension in the relative moving direction of a board | substrate, it can suppress that the whole apparatus enlarges.

Claims (4)

delete A hermetically sealed chamber having a substrate inlet and a substrate outlet; A processing tool arranged inside the chamber to perform a predetermined process on the substrate; In the substrate processing apparatus provided with the movement means which moves a board | substrate relatively with respect to this processing tool, The processing tool is arranged such that the width of the chamber is equal to or larger than the dimension in the direction orthogonal to its relative movement direction of the substrate, and the length of the chamber is smaller than the dimension in the relative movement direction of the substrate. To move the chamber and the substrate relatively, To repel the internal atmosphere and the external atmosphere of the chamber, It is disposed at an upper side and a lower side of the chamber at the inlet of the chamber with the relative movement paths interposed therebetween, and each has a gas discharge port facing and close to the relative movement path of the substrate, and the relative movement path of the substrate from the gas discharge port. A pair of upper and lower inlet gas discharge means for discharging the gas for the curtain respectively toward the upper surface of the substrate, and disposed on the upper side and the lower side of the substrate with the relative movement paths of the substrate interposed therebetween, Gas supply means each having a gas discharge port facing and close to the relative movement path, the gas supply means consisting of a pair of upper and lower outlet gas discharge means for respectively discharging the curtain gas from the gas discharge port toward the relative movement path of the substrate; It is disposed on the upper side and the lower side, respectively, with the relative movement path of the substrate at the substrate inlet of the chamber, and has gas inlets facing each other near the relative movement path of the substrate, through which the curtain gas is supplied. A pair of upper and lower inlet side gas suction means for sucking each and the upper and lower sides of the inlet-side gas suction means are disposed on the upper side and the lower side of the chamber with the relative movement paths interposed therebetween so as to face the relative movement paths of the substrate. And a gas discharge means composed of a pair of upper and lower outlet side gas suction means each having a gas suction port to suck the curtain gas through the gas suction port. 3. The method of claim 2, wherein when a substrate is present at the substrate inlet of the chamber, the upper and lower pair of inlet side gas ejection means and the upper and lower pair of inlet side gas suction means are operated respectively. When the substrate is present at the substrate outlet, the upper and lower pair of outlet gas ejection means and the upper and lower pair of outlet gas suction means are operated respectively, and when the substrate is not present at the substrate inlet of the chamber. And operate the upper or lower inlet gas discharging means and the lower or upper inlet gas suction means, respectively, and when no substrate is present at the substrate outlet of the chamber, the upper or lower side. And switching means for switching to operate the outlet side gas discharge means of the outlet side and the outlet side gas suction means of the lower side or the upper side, respectively. Processor. The method according to any one of claims 1 to 3, And a plurality of chambers connected in a relative direction of movement of the substrate.

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