JP2005353909A - Substrate processor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To perform the processing of a substrate by different kinds of processing liquids in a single processing vessel, by preventing the vapors volatilized from the processing liquids from affecting adversely the processings of the substrate which are performed in other processing portions. <P>SOLUTION: In the main body 11 of a substrate processor 10, while carrying a substrate B by carrying rollers 17 in a substantially horizontal direction, the substrate B is subjected successively to each etching processing and to each cleaning processing following each etching processing. In this substrate processor 10, there are provided constitutively a plurality of liquid recovering type nozzle devices 20, filter devices 70, and exhausting pipes 19. Each liquid recovering type nozzle device 20 is so disposed along a carrying path 171 present in the processor main body 11 that it has a very small clearance oppositely to the processed surface of the carried substrate B. Each filter device 70 is so provided correspondingly to each liquid recovering type nozzle device 20 as to introduce a clean air into the processor main body 11 via each filter 71. Each exhausting pipe 19 exhausts the introduced clean air to the outside of the processor main body 11. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a substrate processing apparatus that performs predetermined processing on a substrate including a glass substrate on which a liquid crystal, various electronic components, and the like are mounted.

  Substrates used for liquid crystal displays or the like are manufactured by sequentially loading the substrates into a plurality of processing tanks provided for each type of processing liquid, and a predetermined processing liquid is supplied in each processing tank. In general, each of them has its own processing. In order to perform such processing on the substrate, a conveyance path is provided over each processing tank, and conveyance means such as a plurality of conveyance rollers are disposed along the conveyance path, and the substrate is conveyed to the conveyance means. However, it is sent into each processing tank in turn.

  When processing different types of processing liquids on the substrate, a sufficient distance between the processing tanks is secured to prevent the upstream processing liquid from being brought into the downstream processing tank. However, there is an inconvenience that an occupied space for the substrate processing is increased and an effective use of the manufacturing space is hindered.

  In order to eliminate such inconvenience, there is known one that employs a system in which a processing liquid is sprayed from a spray nozzle onto a substrate being transported. According to such a treatment liquid spraying method, the treatment liquid can be uniformly applied to the entire substrate without being immersed in the treatment tank, and the apparatus is simplified as compared with the immersion method. However, the sprayed processing liquid spreads on the substrate, and a cleaning process over a required distance is required to surely flow the spread processing liquid down and connect to the next processing. Even with the treatment liquid spray method, there is a limit to downsizing the treatment apparatus.

Incidentally, in recent years, as described in Patent Document 1, a liquid recovery type nozzle device that recovers a processing liquid supplied from a downstream side in the transport direction with respect to a processing surface of a substrate on an upstream side that is separated by a predetermined distance. Has been proposed. Such a liquid recovery type nozzle device recovers the processing liquid supplied to the substrate without waste after processing, so that it is possible not only to suppress the scattering of the supplied processing liquid in the front and rear direction of the substrate as much as possible. Compared with, efficient processing with a small amount of processing liquid is realized.
JP 2002-280340 A

  Therefore, if a liquid recovery type nozzle device is adopted instead of the conventional multiple processing tank installation method in which substrates are sequentially introduced into different processing tanks or the processing liquid spraying method in which the processing liquid is sprayed on the substrate, the front and back of the substrate Therefore, it can be expected that a plurality of liquid recovery type nozzle devices that perform different processing in series along the transport direction are arranged in one processing chamber to reduce the size.

  However, even in the case of a liquid recovery type nozzle device with little scattering of the processing liquid, it is inevitable that the vapor is evaporated from the processing liquid. Therefore, when a plurality of liquid recovery type nozzle devices that use different types of processing liquids are provided in one processing tank, depending on the type of processing liquid, other treatments or unfavorable steam may be processed with respect to the processing liquid. Since the interior of the chamber is totally filled, and this vapor may adversely affect other processes, a plurality of liquid recovery type nozzle devices cannot be simply arranged in one process chamber. It was the actual situation.

  The present invention has been made in view of such a situation, and even if a plurality of liquid recovery type nozzle devices are arranged in one processing chamber, the vapor vaporized from the processing liquid of the one liquid recovery type nozzle device is another. A substrate processing apparatus capable of disposing a plurality of liquid recovery type nozzle devices for supplying different types of processing liquids in one processing chamber without adversely affecting the substrate processing by the liquid recovery type nozzle device. It is intended to provide.

  The invention according to claim 1 is a substrate processing apparatus in which a predetermined surface treatment is sequentially performed on a substrate while the substrate is substantially horizontally transferred by a transfer means in one processing chamber, And a plurality of processing liquids which are disposed opposite to each other with a minute gap on the processing surface of the substrate to be conveyed and which supply different types of processing liquids along the conveying direction. And a gas introducing unit that is provided corresponding to each of the processing units and guides the clean gas to the processing chamber through a filter, and a gas discharge unit that exhausts the introduced clean gas to the outside of the processing chamber. It is characterized by that.

  According to such a configuration, the processing unit that supplies the processing liquid to the substrate supplies the processing liquid to the minute gap formed by being disposed opposite to the processing surface of the substrate to be transferred. Compared to the case where a conventional spray nozzle that supplies the substrate in a sprayed state is employed, the processing liquid is supplied to the substrate in a smaller amount than in the past without waste, and the scattering of the processing liquid can be suppressed to a low level. Therefore, it is possible to execute a plurality of processes for a substrate using different types of processing liquids on a substrate being transferred in one processing chamber.

  And, corresponding to each processing unit provided in a single processing chamber, a gas introduction unit that guides clean gas to the processing chamber via a filter, and a gas discharge unit that exhausts the introduced clean gas to the outside of the processing chamber Are provided with the clean airflow introduced into the processing section via the dedicated gas introduction section without the vapor volatilized from the processing solution in each processing section reaching the other processing section. It will be discharged | emitted out of the system from a dedicated gas discharge part, and it is prevented effectively that the vapor | steam volatilized by the other process part penetrate | invades into the space around each process part.

  The invention described in claim 2 is characterized in that, in the invention described in claim 1, the gas introduction part supplies a clean gas to both the upstream side and the downstream side of each processing part. is there.

  According to such a configuration, the space occupied by each processing unit is a state in which an airflow curtain of clean gas is formed at the boundary position with both the upstream side and the downstream side, that is, the space occupied by the other processing unit adjacent thereto. Therefore, the vapor from the processing liquid generated in each processing unit is blocked by this airflow curtain and prevented from moving to the space of other processing units, and is accompanied by a clean gas flow and discharged out of the system. Is done.

  According to a third aspect of the present invention, in the first or second aspect of the present invention, the filter is characterized in that particulate filter material is dispersed in a fiber assembly.

  According to this configuration, the gas introduced into the processing chamber is filtered by the filter in which the particulate filter material is dispersed in the fiber assembly, and is supplied to the processing chamber as a clean gas. And the dust in the gas supplied to a filter is efficiently removed by the collision with a filter medium within a filter.

  According to a fourth aspect of the present invention, in the invention according to any one of the first to third aspects, the gas discharge section is provided corresponding to each processing section.

  According to such a configuration, the gas from the gas introduction unit provided for each processing unit, the gas that has passed through the substrate processing position does not go to other substrate processing positions, and the substrate at each processing position Processing is preferably performed.

  According to a fifth aspect of the present invention, in the invention according to any one of the first to fourth aspects, the processing chamber includes a partition wall that partitions the adjacent processing section. .

  According to such a configuration, it is possible to reliably secure the space occupied by each processing chamber while being isolated from other processing chambers.

  The invention according to claim 6 is the invention according to any one of claims 1 to 5, wherein a chemical processing unit that performs chemical processing on the substrate and a cleaning processing unit that performs cleaning processing on the substrate after chemical processing. And a drying section for performing a drying process on the substrate after the cleaning process are arranged in the processing chamber in series from the upstream side to the downstream side in the transport direction.

  According to such a configuration, the substrate is subjected to predetermined chemical processing in the chemical processing section while being transported along the transport path, subsequently subjected to cleaning processing in the cleaning processing section, and finally subjected to drying processing in the drying section. After that, it becomes a product and is discharged out of the system from the processing chamber.

  According to invention of Claim 1, corresponding to each process part provided in multiple in one process chamber, the gas introduction part which introduce | transduces clean gas into the said process chamber through a filter, and the introduced clean gas Since each gas discharge unit that exhausts to the outside of the processing chamber is provided, the vapor volatilized from the processing solution in each processing unit does not reach the other processing unit, but is introduced into the processing unit via a dedicated gas introduction unit. Accompanied by the clean air flow, it will be discharged out of the system from the dedicated gas discharge unit, which effectively prevents the vapors vaporized in other processing units from entering the space around each processing unit can do.

  Therefore, even if a plurality of processing units are arranged in series in the substrate transport direction in one processing chamber, the vapor of the processing solution generated in one processing unit and harmful to the substrate processing in the other processing unit is different from the other processing unit. Reaching the processing unit can be reliably prevented. Therefore, it is possible to overturn the conventional technical common sense that a plurality of processing units for processing a substrate with different types of processing liquids cannot be disposed in one processing chamber, and the equipment cost and downsizing of the substrate processing apparatus can be reduced. This can contribute to a reduction in operating costs.

  According to the second aspect of the present invention, the space occupied by each processing unit is the airflow curtain of clean gas at the boundary position with both the upstream side and the downstream side, that is, the space occupied by the other adjacent processing unit. As a result, the vapor from the processing liquid generated in each processing unit is blocked by this air flow curtain and is prevented from moving to the space of other processing units, and is accompanied by the clean gas flow. Therefore, the entire substrate processing space in the processing chamber can be kept clean as a whole.

  According to the third aspect of the present invention, the gas introduced into the processing chamber is filtered by the filter in which the particulate filter material is dispersed in the fiber assembly, and is supplied to the processing chamber as a clean gas. Therefore, the dust in the gas supplied to the filter can be efficiently removed by the collision with the filter medium in the filter.

  According to invention of Claim 4, since the gas discharge part is provided corresponding to each process part, it is the gas from the gas introduction part provided with respect to each process part, Comprising: The gas that has passed does not go to the other substrate processing positions, whereby the substrate processing at each processing position can be suitably performed.

  According to the fifth aspect of the present invention, since the processing chamber is provided with the partition wall separating the adjacent processing unit, the space occupied by each processing chamber is reliably separated from other processing chambers. As a result, it is possible to effectively prevent the atmosphere of another processing chamber from being brought into the processing chamber.

  According to the sixth aspect of the present invention, the substrate is subjected to a predetermined chemical processing in the chemical processing section while being transported along a transport path in one processing chamber, and subsequently subjected to a cleaning processing in the cleaning processing section. After being dried in the drying section, it becomes a product and is discharged out of the system from the processing chamber. Therefore, it is necessary to provide dedicated processing tanks for chemical processing, cleaning processing and drying processing as before. Therefore, the equipment cost for the etching process for the substrate can be greatly reduced.

  FIG. 1 is an explanatory view in cross-sectional view showing an embodiment of a substrate processing apparatus according to the present invention, and FIG. 2 is an explanatory view in plan view. In this embodiment, the substrate processing apparatus 10 is exemplified by an etching processing apparatus that performs an etching process on the substrate B. As shown in FIG. 1, a substrate processing apparatus 10 includes an etching unit 12 that performs an etching process on a substrate B in a processing unit main body 11 that has a rectangular parallelepiped shape, and a substrate B that is derived from the etching unit 12. A cleaning unit 13 that performs a cleaning process on the substrate B and a drying unit 14 that performs a drying process on the substrate B derived from the cleaning unit 13 are provided.

  One processing chamber according to the present invention is formed by the space in the processing apparatus main body 11, and each of the etching unit 12, the cleaning unit 13, and the drying unit 14 is a processing space occupied by the processing unit according to the present invention. .

  A substrate carry-in port 15 is opened on the upstream side wall 111 (right side in FIG. 1) of the processing apparatus main body 11, and the substrate carry-out port 16 is located on the downstream side wall 112 at a position facing the substrate carry-in port 15. Is open. Between the substrate carry-in port 15 and the substrate carry-out port 16, a plurality of carry rollers (carrying means) 17 are arranged in parallel at an equal pitch in the substrate carrying direction (the direction toward the left in FIG. 1). A transport path 171 for transporting the substrate B within the processing apparatus main body 11 is formed on the plurality of transport rollers 17. Each transport roller 17 is driven to rotate counterclockwise in FIG. 1 by driving of a drive motor (not shown).

  Therefore, the substrate B introduced from outside the system into the processing apparatus main body 11 through the substrate carry-in port 15 is transported toward the downstream side of the transport path 171 by the driving rotation of each transport roller 17 and is etched by the etching unit 12. After the processing, the cleaning unit 13 performs the cleaning process, and finally the drying unit 14 performs the drying process, and then the substrate is discharged out of the system via the substrate carry-out port 16.

  The cleaning unit 13 includes a first cleaning unit 130 on the upstream side (right side in FIG. 1) and a second cleaning unit 130 ′ adjacent to the first cleaning unit 130 on the downstream side. The first cleaning unit 130 performs a normal cleaning process on the substrate B derived from the etching unit 12, whereas the second cleaning unit 130 ′ performs a further advanced cleaning process on the substrate B. It is something to apply.

  A first hopper 121 is provided at a position below the etching unit 12 in the processing apparatus main body 11, a second hopper 131 is provided at a position below the first cleaning unit 130, and the second cleaning unit 130 ′. A third hopper 132 is provided at a lower position, and a fourth hopper 141 is provided at a lower position of the drying unit 14. Then, after the processing liquid dripped from the substrate B being transferred along the transfer path 171 is received by the first to fourth hoppers 121, 131, 132, 141, it is appropriately discharged through the opening at the bottom. It is like that.

  Further, an upper partition wall (partition wall) 114 suspended from the top plate 113 of the processing apparatus main body 11 is provided at the front and rear ends of the liquid recovery type nozzle device 20 to be described later and the upper portion of the air knife 30. The partition wall 114 prevents the atmosphere of each part from entering other parts. The lower edge portion of the upper partition wall 114 and the upper edge portions of the first to fourth hoppers 121, 131, 132, and 141 are positioned so as not to interfere with the conveyance path 171, and thereby, in the processing apparatus main body 11. The introduced substrate B can be transported downstream without interfering with the upper partition wall 114 or the like.

  Further, the length of the second cleaning unit 130 ′ in the substrate transport direction is set to be longer than the length of the first cleaning unit 130. The reason for this is to secure a space for the substrate B after the final cleaning process to be further subjected to drying prevention treatment by the liquid holding nozzle device 40 described later.

  Then, the substrate B introduced into the processing apparatus main body 11 is subjected to an etching process using an etching solution in the etching unit 12, a first-stage cleaning process is performed in the first cleaning unit 130, and a second cleaning unit. After the finishing cleaning process is performed in 130 ′, the drying process is performed on the substrate B that has been cleaned in the drying unit 14.

  For the processing such as the cleaning, a pair of liquid recovery type nozzle devices (processing units) opposed to the etching unit 12, the first cleaning unit 130, and the second cleaning unit 130 ′ so as to sandwich the transport path 171 therebetween. 20 are provided, and the etching unit 12 and the first cleaning unit 130 are provided with a pair of upper and lower air knives 30 sandwiching a transport path 171 on the downstream side of the liquid recovery nozzle device 20. On the other hand, in the second cleaning unit 130 ′, a pair of upper and lower liquid holding nozzle devices 40 are provided in a state where the conveyance path 171 is sandwiched downstream of the liquid recovery nozzle device 20.

  The liquid cleaning nozzle device 40 is provided in the second cleaning unit 130 ′ because the full drying process by the air knife 30 is performed by the drying unit 14, so that the substrate B is dried in the second cleaning unit 130 ′. This is because it is sufficient to drain the liquid with the air knife 30 in order to reduce the carry-out of the liquid.

  Further, the liquid holding nozzle device 40 is provided in the second cleaning unit 130 ′ until the substrate B that has been finally cleaned by the liquid recovery type nozzle device 20 reaches the drying unit 14. In such a case, particles may adhere to the front and back surfaces of the substrate B or may have a watermark, which is a final cleaning process to prevent this. A holding nozzle device 40 is provided. By discharging ultrapure water from the liquid holding nozzle device 40 toward the front and back surfaces of the substrate B, it is possible to prevent particles and watermarks from being generated on the substrate B by the drying process in the drying unit 14. .

  In the vicinity of the substrate processing apparatus 10, a processing liquid supply source 50 for supplying a processing liquid to the liquid recovery type nozzle apparatus 20 and the liquid holding nozzle apparatus 40 is installed. The processing liquid supply source 50 includes an etching liquid supply source 51 that supplies an etching liquid mainly composed of hydrofluoric acid to the liquid recovery type nozzle apparatus 20 of the etching unit 12, and a liquid recovery type nozzle apparatus 20 of the first cleaning unit 130. The first cleaning water supply source 52 supplies cleaning water to the second cleaning water supply source 53, and the second cleaning water supply source 53 supplies ultrapure water to the liquid recovery nozzle device 20 of the second cleaning unit 130 '.

  In the drying unit 14, a pair of upper and lower air knives 30 disposed so as to sandwich the conveyance path 171 are provided on the upstream side and the downstream side, respectively. Each of the air knives 30 is disposed obliquely toward the upstream side so that the discharge port faces the transport path 171. An air supply device 60 that supplies the compressed air to the air knife 30 is provided in the vicinity of the apparatus main body 11. The pressurized air from the air supply device 60 is also supplied to the air knife 30 of the etching unit 12 and the cleaning unit 13.

  Then, the substrate B introduced into the drying unit 14 is first drained by the upstream air knife 30 and then sufficiently dried by the downstream air knife 30. Here, by disposing the air knife 30 obliquely, liquid draining and drying are effectively performed. The substrate B that has been dried by the drying unit 14 is discharged out of the system through the substrate carry-out port 16 and is sent to the next step. In addition, the air knife 30 in this drying part 14 does not need to provide the downstream air knife 30, when it can fully dry only with a pair of upper and lower upstream.

  FIG. 3 is a perspective view for explaining the liquid recovery type nozzle device 20, the air knife 30, and the liquid holding nozzle device 40. The liquid recovery type nozzle device 20, the air knife 30 and the liquid holding nozzle device 40 perform the second cleaning. The state provided in part 130 'is shown. As shown in FIG. 3, the liquid recovery nozzle device 20 includes an upper nozzle device 201 provided on the upper side of the transport path 171 and a lower nozzle device 202 disposed on the lower side so as to face the upper nozzle device 201. ing.

  As shown in FIG. 4, the liquid recovery type nozzle device 20 includes a pair of upper and lower nozzle bodies 21 having a rectangular parallelepiped shape elongated in the width direction orthogonal to the substrate transport direction (direction orthogonal to the paper surface of FIG. 4). The inlet tube 22 connected to the downstream end of the nozzle body 21 in the substrate transport direction, the outlet tube 23 connected to the upstream end of the substrate transport direction, and the pair of upper and lower nozzle bodies 21 facing each other. A liquid introduction port 24 elongated in the substrate transport direction formed so as to communicate with the introduction tube 22 on the surface, and a liquid outlet port 25 formed so as to communicate with the discharge tube 23 are configured.

  On the other hand, on the downstream side of the second cleaning water supply source 53, as shown in FIG. 3, a delivery pump 531 for sending the ultrapure water of the second cleaning water supply source 53 is provided. The delivery pump 531 is connected to the introduction pipes 22, and the outlet pipes 23 are connected to a suction pump 532 provided in the vicinity of the processing apparatus main body 11. Therefore, when the ultrapure water from the second cleaning water supply source 53 is introduced into each introduction pipe 22 by driving the delivery pump 531, the ultrapure water is sandwiched between the upper and lower nozzle devices 201 and 202. The liquid lead-out port is supplied between the front and back surfaces of the substrate B and the opposing surfaces of the upper and lower nozzle bodies 21 via the liquid introduction port 24 and does not leak outside through the gap between the substrate B and the nozzle body 21 due to capillary action. It will move in the direction of 25. Then, the ultrapure water that has reached the liquid outlet 25 is sucked through the outlet pipe 23 by the driving of the suction pump 532 and discharged out of the system.

  Further, a plurality of support rollers 26 that support the substrate B are provided on the upper surface side of the lower nozzle body 21, and the substrate B is supported by these support rollers 26, thereby the substrate B and the lower nozzle body. A passage through which ultrapure water passes is formed between the upper surface of 21.

  By adopting such a liquid recovery type nozzle device 20, a reliable cleaning process is realized by supplying the necessary minimum amount of ultrapure water to the substrate B. Therefore, substrate cleaning using expensive ultrapure water is performed. It can contribute to reduction of the running cost of processing.

  The air knife 30 has a pentagonal shape in a side view and is elongated in the width direction of the substrate, a tapered nozzle portion 32 formed on the distal end side of the air knife body 31, and a proximal end side of the air knife body 31. And an air introduction pipe 33 connected to the. An air blowing slit 321 that is long in the width direction of the substrate is provided at the tip of the nozzle portion 32, and the pressurized air that is sent out by driving the air supply device 60 passes through the air introduction pipe 33 to enter the air knife main body 31. Then, the air is blown toward the substrate B from the air blowing slit 321, and the ultrapure water adhering to the front and back surfaces of the substrate B is blown off by the pressurized air flow.

  The air knife 30 is set so as to be inclined with respect to the transport direction of the substrate B. By doing so, the blowing air discharged from the air blowing slit 321 acts as a component force of the pressing force on the cleaning water adhering to the substrate B in the substrate width direction. Compared to the case where the direction is perpendicular to the transport direction, the cleaning water adhering to the substrate B is efficiently removed.

  The liquid holding nozzle device 40 is provided between the liquid recovery type nozzle device 20 and the air knife 30, and is provided in a pair of upper and lower sides so as to sandwich the transport path 171. A cylindrical nozzle tube 41 and the nozzle tube 41 are provided. And an introduction pipe 42 into which ultrapure water from the second washing water supply source 53 is introduced by driving the delivery pump 531, and a surface of each nozzle pipe 41 facing the substrate B in the longitudinal direction. A plurality of nozzle holes 43 drilled at an equal pitch over substantially the entire length.

  Then, ultrapure water is sprayed on the front and back surfaces of the substrate B from the nozzle holes 43 of the liquid holding nozzle device 40 provided in a pair of upper and lower sides with the transport path 171 interposed therebetween, so that the liquid recovery type nozzle device 20 performs cleaning. The treated substrate B is prevented from drying before reaching the air knife 30 and is further subjected to a final cleaning process with the spray water from the liquid holding nozzle device 40. In the state where the drying process of B is performed, it is possible to reliably prevent the occurrence of inconvenience that particles adhere to the front and back surfaces of the substrate B.

  In the present embodiment, the liquid holding nozzle device 40 is located closer to the liquid recovery type nozzle device 20 than the intermediate position between the liquid recovery type nozzle device 20 and the air knife 30, and as much as possible the liquid recovery type. It is provided at a position close to the nozzle device 20. The reason for this is that the liquid recovery type nozzle device 20 has only a minimum amount of ultrapure water coming into contact with the substrate B, so that the amount of adhering water is small. Therefore, the cleaned part of the substrate B is the liquid recovery type. Since natural drying proceeds immediately from the moment when the nozzle device 20 is detached, the liquid holding nozzle device 40 is installed as close to the liquid recovery type nozzle device 20 as possible to avoid this.

  In the substrate processing apparatus 10 configured as described above, in the present invention, as shown in FIGS. 1 and 2, a filter device (gas introduction unit) 70 is disposed on the top plate 113 of the processing apparatus body 11. The clean air cleaned by the filter device 70 is introduced into the processing space of each processing unit, so that the atmosphere in the processing space of each processing unit is always kept clean.

  The filter device 70 includes a slightly thick sheet-like filter 71 and a box-shaped casing 72 that houses the filter 71. An outside air intake for taking in outside air is formed on substantially the entire upper surface of the casing 72, and a mesh-shaped knitting member is stretched over the outside air intake, while a predetermined plate of the top plate 113 of the processing apparatus main body 11 is provided. In the position, a blowing port for blowing clean air cleaned by the filter 71 into the processing apparatus main body 11 is opened. Therefore, the outside air introduced into the casing 72 through the outside air inlet is purified by the filter 71 and then introduced into the processing apparatus main body 11 as clean air.

  In the present embodiment, a so-called ULPA filter (ultra low particulate filter) in which particulate filter medium is dispersed in a fiber assembly is employed as the filter 71. By adopting such a ULPA filter, dust in the outside air introduced into the processing apparatus main body 11 is efficiently removed by collision with the filter medium in the filter 71.

  In the present embodiment, as the filter device 70, the first filter device 701 provided on the most upstream side of the etching unit 12, the most downstream side of the etching unit 12, and the most upstream side of the first cleaning unit 130 are provided. The bridged second filter device 702, the third filter device 703 bridged to the most downstream side of the first washing unit 130 and the most upstream side of the second washing unit 130 ', and the most downstream of the second washing unit 130'. A fourth filter device 704 bridged between the downstream side and the substantially central portion of the drying unit 14 and a fifth filter device 705 provided on the most downstream side of the drying unit 14 are employed.

  Among the first to fifth filter devices 701, 702, 703, 704, and 705, the first to fourth filter devices 701, 702, 703, and 704 are set to have a negative pressure in the processing device main body 11. On the other hand, outside air is supplied to the filter 71 by ventilation of the fifth filter device 705, whereas outside air is taken in by forced suction by driving the pusher blower 73.

  On the other hand, a guide pipe 18 that guides the derivation of gas and liquid in the processing apparatus main body 11 is provided in the lower part of the first to fourth hoppers 121, 131, 132, 141. Each guide pipe 18 is connected to a waste liquid pipe (not shown), and an exhaust pipe (gas discharge part) 19 is branched in the middle of the guide pipe 18. A predetermined gas-liquid separator 181 is provided at a branching position of the guide pipe 18 with respect to the exhaust pipe 19, and the clean air and the processing liquid collected in the guide pipe 18 are separated by the gas-liquid separator 181. , While the processing liquid is led to the waste liquid pipe, the spent air that has passed through the etching unit 12, the cleaning unit 13 and the drying unit 14 (used clean air from the filter device 70 and pressurized air from the air knife 30) ) Is directed to the exhaust pipe 19.

  Each exhaust pipe 19 is connected at its downstream end to a centralized exhaust pipe 74 that is disposed in the vicinity of the substrate processing apparatus 10 and sucks exhaust from various places in the factory. Therefore, the spent air in the exhaust pipe 19 separated by the gas-liquid separator 181 is collected in the centralized exhaust pipe 74 and subjected to a predetermined dust collection process by a dust collector (not shown) installed in the factory. Later, it will be discharged out of the system.

  Each exhaust pipe 19 is provided with an adjustment damper 191 for adjusting the amount of suction air. The adjustment damper 191 has an opening degree depending on whether or not pressurized air is discharged from the air knife 30 in the etching unit 12, the first cleaning unit 130, the second cleaning unit 130 ′, and the drying unit 14. Thus, the pressure in the processing apparatus main body 11 can always be set to a preset negative pressure environment.

  That is, when pressurized air is discharged from the air knife 30, this is detected by a predetermined sensor, and this detection signal is input to a control device (not shown), whereby a control signal from the control device is received. Output to the adjustment damper 191 and the amount of used air sucked into the adjustment damper 191 is increased by increasing the opening of the adjustment damper 191 based on this control signal, while the discharge of pressurized air from the air knife 30 is stopped. Then, this is detected by a predetermined sensor, and the opening degree of the adjustment damper 191 is reduced by a control signal from the control device based on this detection signal, and the amount of suction of used air is reduced. Yes.

  By controlling the opening degree of the adjustment damper 191, the pressures in the etching unit 12, the cleaning unit 13, and the drying unit 14 are always controlled to be constant regardless of the discharge and stoppage of the pressurized air from the air knife 30. .

  As described above in detail, the substrate processing apparatus 10 according to the present invention performs a predetermined surface treatment on the substrate B while transporting the substrate B in the horizontal direction by the transport roller 17 in the processing apparatus body 11. In this embodiment, an etching process and a subsequent cleaning process are sequentially performed, and a minute gap is formed in the processing surface of the substrate B along the transfer path 171 in the processing apparatus main body 11. A plurality of liquid recovery type nozzle devices 20 arranged opposite to each other, a filter device 70 provided corresponding to each liquid recovery type nozzle device 20 and guiding clean air to the processing device main body 11 via a filter 71, and introduction And an exhaust pipe 19 that exhausts the purified air that has been exhausted out of the processing apparatus main body 11.

  According to such a configuration, the vapor volatilized from the processing liquid in each liquid recovery type nozzle device 20 does not reach the other liquid recovery type nozzle device 20, and passes through the dedicated filter device 70 to the liquid recovery type nozzle device 20. Accompanying the introduced clean airflow, the gas is discharged from the exclusive exhaust pipe 19 to the outside of the system, and thus, the liquid recovery type nozzle device 20 volatilizes in the space around each liquid recovery type nozzle device 20. It is possible to effectively prevent the vapor from entering.

  Therefore, even if a plurality of liquid recovery type nozzle devices 20 are arranged in series in the substrate transport direction in one processing apparatus main body 11, another liquid recovery type nozzle device generated in one liquid recovery type nozzle device 20. It is possible to reliably prevent the vapor of the processing liquid harmful to the substrate processing at 20 from reaching the other liquid recovery type nozzle device 20. Accordingly, it is possible to overturn the conventional common sense that it is impossible to dispose a plurality of liquid recovery type nozzle devices 20 that perform substrate processing with different types of processing liquids in one processing apparatus main body 11. It is possible to contribute to reduction of equipment cost and operation cost by making the system compact.

  Further, since the filter device 70 supplies clean air on both the upstream side and the downstream side of each liquid recovery type nozzle device 20 (that is, the upstream side wall 111, the upper partition walls 114, and the like in the processing apparatus main body 11). Since it is arranged and set so as to supply clean air along the downstream side wall 112), each liquid recovery type nozzle device in the etching unit 12, the first cleaning unit 130, the second cleaning unit 130 ′, and the drying unit 14. The space occupied by 20 is in a state in which an airflow curtain of clean air is formed at both the upstream side and the downstream side, that is, at the boundary position with the space occupied by the other adjacent liquid recovery type nozzle device 20. Vapor from the processing liquid generated in the liquid recovery type nozzle device 20 is blocked by this air flow curtain and is prevented from moving to the space of another liquid recovery type nozzle device 20. The substrate processing space in the processing apparatus main body 11 can be maintained at generally always clean Te.

  In addition, since the filter 71 is a filter in which a particulate filter medium is dispersed in a fiber assembly, the gas introduced into the processing apparatus main body 11 is finely filtered in the fiber assembly. Is filtered by a filter 71 in which the gas is dispersed and is supplied to the processing apparatus main body 11 as a clean gas. And the dust in the gas supplied to the filter 71 is efficiently removed by the collision with the filter medium in the filter 71.

  Further, since the exhaust pipe 19 is branched from the respective guide pipes 18 corresponding to the etching section 12, the first cleaning section 130, the second cleaning section 130 ', and the drying section 14, the filter device 70 that has passed through each section. Inconvenience that the gas from the gas is introduced into a part different from the part through which the gas passes is surely avoided, so that the substrate processing can be performed in a suitable environment in each part.

  Further, in the processing apparatus main body 11, between the etching unit 12 and the first cleaning unit 130, between the first cleaning unit 130 and the second cleaning unit 130 ′, and between the second cleaning unit 130 ′ and the drying unit 14. Since the upper partition wall 114 is provided between them, the space occupied by each part can be separated from the space of other parts, whereby the atmosphere of the other processing apparatus main body 11 is directed to the processing apparatus main body 11. It can be effectively prevented from being brought in.

  The present invention is not limited to the above embodiment, and includes the following contents.

  (1) In the above embodiment, the substrate processing apparatus 10 that performs the etching process on the substrate B is employed. However, the present invention is limited to the substrate processing apparatus 10 that is used for the etching process. Instead, the substrate B may be subjected only to a water washing process, or may be applied to a process other than the etching process, such as a process that performs a peeling process on the substrate B.

  (2) In the above embodiment, the transport roller 17 is employed as the transport means for transporting the substrate B in the processing apparatus body 11. However, the present invention is limited to the transport means being the transport roller 17. Instead of this, other transport methods such as a transport belt that transports the substrate B in a state where the substrate B is disposed may be employed.

  (3) In the above embodiment, the liquid holding nozzle device 40 is provided in the second cleaning unit 130 ′, but the present invention is not limited to adopting the liquid holding nozzle device 40. However, depending on the situation, the installation of the liquid holding nozzle device 40 may be omitted.

  (4) In the above embodiment, the downstream end of each exhaust pipe 19 is connected to a centralized exhaust pipe 74 disposed in the factory, but instead of this, a suction blower dedicated to each exhaust pipe 19 is provided. May be installed.

  (5) In the above embodiment, source water of a different system from the first cleaning water supply source 52 and the second cleaning water supply source 53 is used, but instead of this, the second cleaning unit 130 ′ is used. The waste water may be used as source water for the first cleaning unit 130. By doing so, it is possible to effectively use the expensive ultrapure water of the second cleaning water supply source 53.

  (6) In the above embodiment, air is adopted as the gas supplied into the processing apparatus main body 11 via the filter device 70. However, in the present invention, the gas supplied into the processing apparatus main body 11 is The gas is not limited to air, and may be other gas such as nitrogen.

It is explanatory drawing of the cross sectional view which shows one Embodiment of the substrate processing apparatus which concerns on this invention. It is explanatory drawing of planar view of the substrate processing apparatus shown in FIG. It is a perspective view for demonstrating a liquid collection | recovery type nozzle device, an air knife, and a liquid holding nozzle device, and has shown the state by which the liquid collection type nozzle device, the air knife, and the liquid holding nozzle device were provided in the 2nd washing | cleaning part. . It is sectional drawing of the side view which shows one Embodiment of a liquid collection | recovery type nozzle apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Substrate processing apparatus 11 Processing apparatus main body 111 Upstream side wall 112 Downstream side wall 113 Top plate 114 Partition wall 115 Bottom plate 12 Etching part 121 1st hopper 13 Cleaning part 130 1st washing part 130 '2nd washing part 131 2nd hopper 132 3rd Hopper 14 Drying unit 141 Fourth hopper 15 Substrate carry-in port 16 Substrate carry-out port 17 Transport roller 171 Transport path 18 Guide tube 181 Gas-liquid separator 19 Exhaust tube 191 Adjustment damper 20 Liquid recovery type nozzle device (liquid recovery type nozzle unit)
201 Upper nozzle device 202 Lower nozzle device 21 Nozzle body 22 Introducing tube 23 Outlet tube 24 Liquid inlet 25 Liquid outlet 26 Support roller 30 Air knife (liquid cutting part)
DESCRIPTION OF SYMBOLS 31 Air knife main body 32 Nozzle part 321 Air blowing slit 33 Air introducing pipe 40 Liquid holding nozzle device 41 Nozzle pipe 42 Introducing pipe 43 Nozzle hole 50 Washing water supply source 51 First washing water supply source 52 Second washing water supply source 53 Third cleaning water supply source 531 Delivery pump 532 Suction pump 60 Air supply device 70 Filter device 701 First filter device 702 Second filter device 703 Third filter device 704 Fourth filter device 71 Filter 72 Casing 73 Pushing blower 74 Concentrated exhaust pipe B board

Claims (6)

A substrate processing apparatus in which a predetermined surface treatment is sequentially performed on a substrate while the substrate is transported in a substantially horizontal direction by a transport means in one processing chamber,
It is disposed along the transport path in the processing chamber, and is disposed opposite to the processing surface of the substrate to be transported with a minute gap, and different types of processing liquids are placed in the minute gap along the transport direction. A plurality of processing units to supply;
A gas introduction unit provided corresponding to each of the processing units, and leading a clean gas to the processing chamber through a filter;
A substrate processing apparatus comprising: a gas discharge unit that exhausts the introduced clean gas to the outside of the processing chamber.   The substrate processing apparatus according to claim 1, wherein the gas introduction unit supplies a clean gas to both an upstream side and a downstream side of each processing unit.   3. The substrate processing apparatus according to claim 1, wherein the filter is formed by dispersing fine filter material in a fiber assembly.   The substrate processing apparatus according to claim 1, wherein the gas discharge unit is provided corresponding to each processing unit.   The substrate processing apparatus according to claim 1, wherein the processing chamber includes a partition wall that partitions a processing unit adjacent thereto.   A chemical processing unit that performs chemical processing on the substrate, a cleaning processing unit that performs cleaning processing on the substrate after chemical processing, and a drying unit that performs drying processing on the substrate after cleaning processing are upstream in the transport direction. 6. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is disposed in series in the processing unit in a direction from a downstream side to a downstream side.

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