WO2003066486A1 - Substrate processing apparatus of transfer type - Google Patents

Substrate processing apparatus of transfer type Download PDF

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Publication number
WO2003066486A1
WO2003066486A1 PCT/JP2002/000906 JP0200906W WO03066486A1 WO 2003066486 A1 WO2003066486 A1 WO 2003066486A1 JP 0200906 W JP0200906 W JP 0200906W WO 03066486 A1 WO03066486 A1 WO 03066486A1
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WO
WIPO (PCT)
Prior art keywords
substrate
liquid
chemical
section
chamber
Prior art date
Application number
PCT/JP2002/000906
Other languages
French (fr)
Japanese (ja)
Inventor
Hitoshi Tauchi
Haruhiko Koizumi
Original Assignee
Sumitomo Precision Products Co., Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Precision Products Co., Ltd filed Critical Sumitomo Precision Products Co., Ltd
Priority to PCT/JP2002/000906 priority Critical patent/WO2003066486A1/en
Priority to JP2003565876A priority patent/JP4044047B2/en
Priority to CNA02808277XA priority patent/CN1503758A/en
Priority to KR10-2004-7011860A priority patent/KR20040078684A/en
Priority to TW092102118A priority patent/TW593090B/en
Publication of WO2003066486A1 publication Critical patent/WO2003066486A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece

Definitions

  • the present invention relates to a transfer type substrate processing apparatus suitably used for manufacturing a glass substrate for a liquid crystal display device.
  • the glass substrate used for the liquid crystal display device is the material of the glass substrate
  • the substrate processing equipment is roughly divided into dry type and pet type, and wet type is divided into batch type and single wafer type. Further, the single wafer type is subdivided into a fixed position rotation type and a transport type by a roller transport or the like.
  • the transport type has a basic structure for supplying a processing liquid to the surface of the substrate while transporting the substrate in the horizontal direction. ⁇ Used for separation processing.
  • the substrate sequentially passes through a receiving section (loader section), a liquid avoiding section, a chemical processing section, a cleaning section, and a liquid removing section.
  • a chemical such as an etching liquid or a separation liquid is discharged from a nozzle disposed above the substrate transfer line, and the substrate passes through the chemical to supply the chemical to the entire surface of the substrate.
  • the surface of the substrate is selectively chemically treated.
  • the upstream side of the chemical processing section that is, the liquid avoiding section disposed between the chemical processing section and the receiving section, is complicated with the chemical used in the downstream chemical processing section, and furthermore the chemical atmosphere in the chemical processing section.
  • Upstream receiver with a It is a so-called buffer (absorber) intended to prevent intrusion into the receiving part.
  • the total length of the liquid avoiding section is set to be larger than the length of the substrate so that the substrate can be completely accommodated.
  • shutters are provided at the substrate entrance and substrate exit provided on the front and rear walls. Then, when the substrate enters the liquid avoidance section with the inlet opened and the outlet closed, the substrate stops once and the inlet is closed. After that, the outlet is opened, and the substrate advances from the liquid avoidance part to the chemical treatment part on the downstream side.
  • the substrate completely exits the liquid avoidance area and closes the shutter at the exit and then starts discharging the chemical liquid in the chemical liquid processing section, the intrusion of the chemical liquid into the liquid avoidance section is suppressed, and contamination in the receiving section is also suppressed.
  • the start of chemical solution discharge is delayed, and the chemical solution treatment section becomes longer, which causes a large problem in throughput and equipment scale.
  • An object of the present invention is to provide a method for controlling the downstream side from the stage in which a substrate passes through an outlet of a liquid avoiding section.
  • An object of the present invention is to provide a transport-type substrate processing apparatus that can effectively prevent chemical liquid contamination in an upstream receiving section even when a chemical liquid discharging operation is started in a chemical liquid processing section. Disclosure of the invention
  • a transport type substrate processing apparatus of the present invention transports a substrate in a horizontal direction, passes the substrate through a plurality of processing units, and performs a chemical solution processing in at least one of the plurality of processing units.
  • a transport-type substrate processing apparatus provided with a liquid avoiding section upstream of the chemical solution treating section, wherein the inside of the liquid avoiding section is divided into a plurality of chambers in the substrate transport direction by at least one partition wall, and the most upstream side in the liquid avoiding section Exhaust means for sucking negative pressure in at least one room except the room is provided.
  • At least one of the plurality of chambers in the liquid avoiding section except for the most upstream chamber is sucked to the negative pressure.
  • the downstream chamber is suctioned to a negative pressure.
  • at least one of the two or more rooms excluding the most upstream room is sucked to the negative pressure.
  • the chamber at the most upstream side in the liquid avoiding section is controlled at normal pressure or positive pressure. It is preferable that the liquid avoiding section is divided into three or more chambers in the substrate transfer direction, and at least one of the liquid avoiding sections except for the most upstream chamber and the most downstream chamber is suctioned to a negative pressure.
  • it is effective not only to control the specific chamber to a negative pressure, but also to gradually reduce the pressure from the most upstream chamber to the most downstream chamber in the liquid avoidance section.
  • the liquid avoidance section should be 3 or more in the substrate transport direction.
  • the partition wall position is set so that when the front end of the substrate reaches the chemical discharge start position in the downstream chemical processing section, the rear end of the substrate exits the most upstream chamber in the liquid avoidance section. It is preferable to set the partition wall position such that the rear end of the substrate enters the most downstream chamber in the liquid avoidance section when the front end of the substrate reaches the chemical solution discharge start position in the chemical processing section. preferable.
  • the total length of the liquid avoiding section is set to be a dog rather than the length of the substrate, and It is preferable to equip the substrate entrance and the substrate exit with a shutter.
  • FIG. 1 is a schematic side view of a substrate processing apparatus showing one embodiment of the present invention
  • FIG. 2 is a schematic plan view of a liquid avoiding section.
  • the substrate processing apparatus of the present embodiment is an etching apparatus used for manufacturing a glass substrate for a liquid crystal display.
  • the substrate processing apparatus includes a receiving section 20, a liquid avoiding section 30, a chemical processing section 40, a cleaning section 50, and a liquid removing section arranged in order in the transport direction of the substrate 10. 60.
  • Each section is equipped with a number of transport rollers 21, 31, 31, 41, 51, 61 for supporting the substrate 10 horizontally and transporting it horizontally.
  • the liquid avoiding section 30 as a buffer (buffer section) provided between the receiving section 20 and the chemical processing section 40 has two partition walls 3.
  • the two chambers 33a, 33b, and 33c are divided into three chambers 33a, 33b, and 33c in the transport direction of the substrate 10 by 2a and 32b.
  • the entrance provided in the partition wall with the receiving part 20 on the upstream side is equipped with an openable / closable shutter 34a.
  • an opening / closing shutter 34 b is provided at an outlet provided in a partition wall with the chemical solution processing section 40 on the downstream side.
  • the partition walls 32a and 32b are provided with slit-like passage ports through which the substrate 10 passes.
  • the first chamber 33a on the upstream side adjacent to the receiving part 20 on the upstream side is a clean room and is configured to be maintained at a slightly positive pressure.
  • the third chamber 33 c adjacent to the chemical processing section 40 on the downstream side is In order to discharge a chemical solution (etching solution in this case) entering from the chemical solution processing section 40, a drain port 36 is provided on the bottom surface.
  • the total length L 1 of the liquid avoiding portion 20 is larger than the length L 2 of the substrate 10. Further, the distance L 3 from the second partition 32 b to the chemical solution discharge start position in the chemical solution processing section 40 on the downstream side is set to be longer than the length L 2 of the substrate 10.
  • the chemical processing section 40 is provided above the upper surface of the substrate 10 with a nozzle unit 42 for supplying a chemical (an etching liquid in this case) from above to a position above the transport line of the substrate 10.
  • the cleaning unit 50 includes a first shower unit 52 for spraying pure water from above on the upper surface of the substrate 10 in a shower shape, and a second shower unit for spraying pure water from below onto the lower surface of the substrate 10.
  • the shower unit 53 is provided with a transfer line for the substrate 10 therebetween.
  • the liquid draining section 60 is provided with a pair of upper and lower slit nozzles 62, 63 for air knives arranged so as to sandwich the transfer line of the substrate 10 from above and below. ing.
  • the upper slit nozzle 62 removes water droplets and moisture from the cleaned upper surface of the substrate 10 by blowing air over the entire surface of the substrate 10 in a thin film shape.
  • the lower slit nozzle 63 removes water droplets and moisture from the cleaned lower surface of the substrate 10 by blowing air in a thin film shape over the entire lower surface of the substrate 10.
  • the upper and lower slit nozzles 62, 63 are tilted upstream in the transport direction of the substrate 10 in a side view and sideways in a plan view in order to increase the efficiency of removing water droplets and moisture.
  • the substrate 10 passes through the receiving section 20, the liquid avoiding section 30, the chemical processing section 40, the cleaning section 50, and the liquid removing section 60 in this order, and
  • the upper surface of the substrate 10 is subjected to a chemical treatment (here, an etching process), and the upper and lower surfaces are cleaned and then dried.
  • a chemical treatment here, an etching process
  • the shutter 34 a separating the two parts is operated in the opening direction, and the entrance is opened. At this time, the central second chamber 33b is exhausted to a negative pressure. Further, the shutter 34b that separates the liquid avoiding section 40 and the chemical processing section 40 is operated in the closing direction, and the outlet is closed. In this state, the substrate 10 enters the liquid avoiding section 30.
  • the substrate 10 stops temporarily, during which the shutter 34a first closes, and then the shutter 34b opens. This avoids a situation in which the receiving section 20 and the chemical processing section 40 are directly connected.
  • the chemical liquid that enters the third chamber 33c is diluted by the pure water stored in the third chamber 33c, and is sequentially discharged to the outside through the drain port 36. Controlled at positive pressure, the second chamber 33b is sucked at negative pressure. Therefore, the force of the vapor of the chemical into the second chamber 33b directly from the third chamber 33c or from the chemical processing section 40 via the third chamber 33c, and at the same time, the first chamber 33a An airflow from the second chamber 33b is also formed. For this reason, a situation in which the chemical solution or its vapor enters the first chamber 33a is avoided. That is, the first chamber 33a in contact with the receiving part 20 is always a clean zone from both sides of liquid and gas. For this reason, there is no danger of the chemical atmosphere entering the receiving part 20.
  • the liquid avoiding section 30 disposed downstream of the receiving section 20 is divided into three chambers, and the central second chamber 33 b is sucked to a negative pressure and transmitted along the upper surface of the substrate 10.
  • a clean area that is not always contaminated with the chemical solution can be kept in the liquid avoidance section 30.
  • And can be formed in a portion adjacent to. This allows the chemical solution processing unit 40 to start discharging the chemical solution while the substrate 10 passes through the outlet of the liquid avoidance unit 30 without waiting for the substrate 10 to escape from the liquid avoidance unit 30. Therefore, it is possible to completely prevent contamination by the chemical solution in the receiving portion 20.
  • a space exceeding the length of the substrate 10 is required in front of the nozzle unit 42 in 40, and the apparatus becomes large. Also, the processing time becomes longer,
  • the substrate processing apparatus of the present invention transports a substrate in the horizontal direction, passes the substrate through the plurality of processing units, performs the chemical processing in at least one of the plurality of processing units, and performs the chemical processing in the chemical processing unit.
  • the transport type substrate processing apparatus provided with a liquid avoiding section on the upstream side, the inside of the liquid avoiding section is divided into a plurality of chambers in a substrate transport direction by a plurality of partition walls, and at least one chamber except the most upstream chamber in the liquid avoiding section is provided.

Abstract

Chemical contamination at the receiving unit on the upstream side is prevented even if chemical discharge is started in a chemical processing unit on the downstream side in the stage where a substrate (10) passes through the outlet port of a chemical avoiding unit (30). The chemical avoiding unit (30) is partitioned into chambers (33a, 33b, 33c) arranged in the direction of the substrate transfer by at least one partition (32a, 32b). At least one chamber (33b) except the chamber (33a) at the end of the upstream side in the chemical avoiding unit (30) is brought into a negative-pressure state. The pressure of the chamber (33a) is controlled at a normal or positive value. The positions of the partitions are determined so that the trailing end of the substrate (10) may come out of the chamber (33a) when the leading end of the substrate (10) reaches the chemical discharge starting point in the chemical processing unit on the downstream side. Preferable, the positions of the partitions are determined so that the trailing end of the substrate enter the chamber (33c) at the end of the downstream side in the chemical avoiding unit (30) when the when the leading end of the substrate (10) reaches the chemical discharge starting point.

Description

技術分野 Technical field
本発明は、 液晶表示装置用ガラス基板の製造に好適に使用される搬送 式基板処理装置に関する。 明  The present invention relates to a transfer type substrate processing apparatus suitably used for manufacturing a glass substrate for a liquid crystal display device. Light
^景技術  ^ Scenic technology
液晶表示装置に使用されるガラス基板は、 素材であるガラス基板の表 書  The glass substrate used for the liquid crystal display device is the material of the glass substrate
面にエツチング、 剝離等の化学処理を繰り返し施すことにより製造され る。 その基板処理装置はドライ式とゥヱット式に大別され、 ウエッ ト式 はバッチ式と枚葉式に分けられる。 更に、 枚葉式は定位置回転式とロー ラ搬送等による搬送式とに細分される。 It is manufactured by repeatedly performing chemical treatments such as etching and separation on the surface. The substrate processing equipment is roughly divided into dry type and pet type, and wet type is divided into batch type and single wafer type. Further, the single wafer type is subdivided into a fixed position rotation type and a transport type by a roller transport or the like.
これらの基板処理装置のうち、 搬送式のものは、 基板を水平方向に搬 送しながら基板の表面に処理液を供給する基本構造になつており、 高効 率なことから以前よりエツチング処理ゃ剝離処理に使用されている。 搬送式基板処理装置では、 基板が受け入れ部 （ローダ部） 、 液避け部 、 薬液処理部、 洗浄部及び液切り部を順番に通過する。 薬液処理部では 、 基板搬送ラインの上方に配置されたノズルからエッチング液、 剝離液 等の薬液が吐出され、 その薬液中を基板が通過することにより、 基板の 表面全体に薬液が供給される。 この薬液処理により、 基板の表面が選択 的に化学処理される。  Among these substrate processing apparatuses, the transport type has a basic structure for supplying a processing liquid to the surface of the substrate while transporting the substrate in the horizontal direction.使用 Used for separation processing. In the transport type substrate processing apparatus, the substrate sequentially passes through a receiving section (loader section), a liquid avoiding section, a chemical processing section, a cleaning section, and a liquid removing section. In the chemical processing section, a chemical such as an etching liquid or a separation liquid is discharged from a nozzle disposed above the substrate transfer line, and the substrate passes through the chemical to supply the chemical to the entire surface of the substrate. By this chemical treatment, the surface of the substrate is selectively chemically treated.
ところで、 薬液処理部の上流側、 即ち薬液処理部と受け入れ部の間に 配置される液避け部は、 下流側の薬液処理部で使用される薬液、 更には 薬液処理部内の薬液雰囲気が、 複雑な受け入れ機構を備えた上流側の受 け入れ部に侵入するを防止することを目的とした、 言わばバッファ （緩 衝部） である。 By the way, the upstream side of the chemical processing section, that is, the liquid avoiding section disposed between the chemical processing section and the receiving section, is complicated with the chemical used in the downstream chemical processing section, and furthermore the chemical atmosphere in the chemical processing section. Upstream receiver with a It is a so-called buffer (absorber) intended to prevent intrusion into the receiving part.
この目的を達成するために、 液避け部内が負圧に吸引されるだけでな く、 液避け部の全長が、 基板が完全に収容され得るように、 基板の長さ より大きく設定されており、 且つ、 その前壁及び後壁に設けられた基板 入口及び基板出口にはシャッターが装備されている。 そして、 入口が開 放し、 出口が閉じた状態で液避け部内に基板が進入すると、 一旦基板が 停止し、 入口が閉止する。 その後、 出口が開放し、 液避け部から下流側 の薬液処理部へ基板が進出していく。 このようなタイミングで基板の搬 送、 並びに入口及び出口のシャツ夕一が操作されることにより、 一時的 にしろ受け入れ部が薬液処理部と直結する事態が回避され、 薬液による 受け入れ部内の汚染が防止されることになる。  In order to achieve this purpose, not only the inside of the liquid avoiding section is suctioned to a negative pressure, but also the total length of the liquid avoiding section is set to be larger than the length of the substrate so that the substrate can be completely accommodated. Also, shutters are provided at the substrate entrance and substrate exit provided on the front and rear walls. Then, when the substrate enters the liquid avoidance section with the inlet opened and the outlet closed, the substrate stops once and the inlet is closed. After that, the outlet is opened, and the substrate advances from the liquid avoidance part to the chemical treatment part on the downstream side. By carrying the substrate at this timing and operating the shirts at the entrance and exit, it is possible to prevent the receiving part from being directly connected to the chemical processing part even temporarily, and to prevent contamination in the receiving part due to the chemical. Will be prevented.
ところ力^ 実際の操業では、 このような 2重、 3重の配慮にもかかわ らず、 薬液による受け入れ部内の汚染が防止されないのが現状である。 その大きな原因として、 基板が出口を通って液避け部から薬液処理部へ 侵入する途中で、 薬液処理部では薬液の吐出が始まり、 基板の上面を伝 つて多量の薬液が液避け部に侵入して、 液避け部が薬液雰囲気で満たさ れ、 液避け部内が負圧に排気されているとは言え、 入口が開放したとき に液避け部から受け入れ部への薬液雰囲気の侵入が避けられないことが 考えられる。  However, in actual operations, in spite of these double and triple considerations, the current situation is that contamination of the receiving area with chemicals is not prevented. A major cause is that while the substrate passes through the outlet and enters the chemical treatment section from the liquid avoidance section, the chemical treatment section starts discharging chemicals, and a large amount of chemical solution enters the liquid avoidance section along the top surface of the substrate. Although the liquid avoidance part is filled with the chemical atmosphere and the inside of the liquid avoidance part is evacuated to a negative pressure, entry of the chemical atmosphere from the liquid avoidance part to the receiving part when the inlet is opened cannot be avoided. Can be considered.
基板が液避け部を完全に出て、 出口のシャッタ一を閉じてから薬液処 理部での薬液吐出を開始すれば、 液避け部への薬液の侵入が抑制され、 受け入れ部内の汚染も抑制されると考えられる力^ その一方で薬液の吐 出開始が遅れ、 薬液処理部が長くなるというスループッ ト性、 設備規模 上の大きな問題が発生する。  If the substrate completely exits the liquid avoidance area and closes the shutter at the exit and then starts discharging the chemical liquid in the chemical liquid processing section, the intrusion of the chemical liquid into the liquid avoidance section is suppressed, and contamination in the receiving section is also suppressed. On the other hand, the start of chemical solution discharge is delayed, and the chemical solution treatment section becomes longer, which causes a large problem in throughput and equipment scale.
本発明の目的は、 液避け部の出口を基板が通過する段階から下流側の 薬液処理部で薬液吐出操作を開始しても、 上流側の受け入れ部の薬液汚 染を効果的に防止できる搬送式基板処理装置を提供することにある。 発明の開示 It is an object of the present invention to provide a method for controlling the downstream side from the stage in which a substrate passes through an outlet of a liquid avoiding section. An object of the present invention is to provide a transport-type substrate processing apparatus that can effectively prevent chemical liquid contamination in an upstream receiving section even when a chemical liquid discharging operation is started in a chemical liquid processing section. Disclosure of the invention
上記目的を達成するために、 本発明の搬送式基板処理装置は、 基板を 水平方向へ搬送して複数の処理部に通過させ、 複数の処理部の少なくと も 1つで薬液処理を行うと共に、 薬液処理部の上流側に液避け部を設け た搬送式基板処理装置において、 前記液避け部内を少なくとも 1つの隔 壁により基板搬送方向で複数室に区画し、 前記液避け部内の最上流側の 室内を除く少なくとも 1つの室内を負圧に吸引する排気手段を設けたも のである。  In order to achieve the above object, a transport type substrate processing apparatus of the present invention transports a substrate in a horizontal direction, passes the substrate through a plurality of processing units, and performs a chemical solution processing in at least one of the plurality of processing units. A transport-type substrate processing apparatus provided with a liquid avoiding section upstream of the chemical solution treating section, wherein the inside of the liquid avoiding section is divided into a plurality of chambers in the substrate transport direction by at least one partition wall, and the most upstream side in the liquid avoiding section Exhaust means for sucking negative pressure in at least one room except the room is provided.
本発明の搬送式基板処理装置においては、 液避け部における複数の室 内のうちの最上流側の室内を除く少なくとも 1つの室内が負圧に吸引さ れる。 2室の場合は下流側の室内が負圧に吸引される。 3室以上の場合 は、 最上流側の室内を除いた 2以上の室内の少なくとも 1つが負圧に吸 引される。 これにより、 最上流側の室内が常時清浄な雰囲気に維持され 、 液避け部の上流側と接する部分に常時清浄なゾーンが形成される。 そ の結果、 液避け部の上流側における汚染が防止される。  In the transport-type substrate processing apparatus of the present invention, at least one of the plurality of chambers in the liquid avoiding section except for the most upstream chamber is sucked to the negative pressure. In the case of two chambers, the downstream chamber is suctioned to a negative pressure. In the case of three or more rooms, at least one of the two or more rooms excluding the most upstream room is sucked to the negative pressure. As a result, the room on the most upstream side is always maintained in a clean atmosphere, and a constantly clean zone is formed in a portion in contact with the upstream side of the liquid avoiding portion. As a result, contamination on the upstream side of the liquid avoidance section is prevented.
複数室の圧力管理については、 液避け部における最上流側の室内を常 圧又は陽圧に管理することが好ましい。 また、 液避け部を基板搬送方向 で 3以上の室に区画し、 液避け部における最上流側の室内及び最下流側 の室内を除く少なくとも 1つの室内を負圧に吸引することが好ましい。 ここで、 特定の室内を負圧に管理するだけでなく、 液避け部における最 上流側の室内から最下流側の室内にかけて段階的に圧力を低下させるこ とも有効である。  Regarding the pressure control of the plurality of chambers, it is preferable that the chamber at the most upstream side in the liquid avoiding section is controlled at normal pressure or positive pressure. It is preferable that the liquid avoiding section is divided into three or more chambers in the substrate transfer direction, and at least one of the liquid avoiding sections except for the most upstream chamber and the most downstream chamber is suctioned to a negative pressure. Here, it is effective not only to control the specific chamber to a negative pressure, but also to gradually reduce the pressure from the most upstream chamber to the most downstream chamber in the liquid avoidance section.
液避け部を仕切る隔壁については、 液避け部を基板搬送方向で 3以上 の室に区画し、 基板の前端が下流側の薬液処理部における薬液吐出開始 位置に到達した時点で、 基板の後端が液避け部における最上流側の室内 を抜け出るように、 隔壁位置を設定することが好ましく、 基板の前端が 薬液処理部における薬液吐出開始位置に到達した時点で基板の後端が液 避け部における最下流側の室内に進入するように、 隔壁位置を設定する ことがより好ましい。 For partitions separating the liquid avoidance section, the liquid avoidance section should be 3 or more in the substrate transport direction. The partition wall position is set so that when the front end of the substrate reaches the chemical discharge start position in the downstream chemical processing section, the rear end of the substrate exits the most upstream chamber in the liquid avoidance section. It is preferable to set the partition wall position such that the rear end of the substrate enters the most downstream chamber in the liquid avoidance section when the front end of the substrate reaches the chemical solution discharge start position in the chemical processing section. preferable.
これにより、 下流側の薬液処理部で吐出される薬液が、 基板の上面を 伝って最上流側の室内に侵入するおそれがなくなり、 液避け部の上流側 における汚染がより効果的に防止される。  This eliminates the possibility that the chemical discharged from the chemical processing section on the downstream side will travel along the upper surface of the substrate and enter the room on the most upstream side, and thus more effectively prevent contamination on the upstream side of the liquid avoidance section. .
また、 基板を一旦液避け部内に収容し、 液避け部の上流側と下流側が 連通する事態を回避するために、 液避け部の全長を基板の長さより犬と し、 且つ、 液避け部の基板入口及び基板出口にシャツタ一を装備するこ とが好ましい。 図面の簡単な説明  Also, in order to avoid the situation in which the substrate is temporarily housed in the liquid avoiding section and the upstream and downstream sides of the liquid avoiding section communicate with each other, the total length of the liquid avoiding section is set to be a dog rather than the length of the substrate, and It is preferable to equip the substrate entrance and the substrate exit with a shutter. BRIEF DESCRIPTION OF THE FIGURES
図 1は本発明の一実施形態を示す基板処理装置の概略側面図、 図 2は 液避け部の概略平面図である。 発明を実施するための最良の形態  FIG. 1 is a schematic side view of a substrate processing apparatus showing one embodiment of the present invention, and FIG. 2 is a schematic plan view of a liquid avoiding section. BEST MODE FOR CARRYING OUT THE INVENTION
以下に本発明の実施形態を図面に基づいて詳細に説明する。  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
本実施形態の基板処理装置は、 液晶表示装置用ガラス基板の製造に使 用されるエッチング装置である。 この基板処理装置は、 図 1に示すよう に、 基板 1 0の搬送方向へ順番に配列された受け入れ部 2 0、 液避け部 3 0、 薬液処理部 4 0、 洗浄部 5 0及び液切り部 6 0を備えている。 各 部は、 基板 1 0を水平に支持して水平方向へ搬送する多数の搬送ローラ 2 1， 3 1 , 4 1 , 5 1， 6 1をそれぞれ装備している。 受け入れ部 2 0と薬液処理部 4 0の間に設けられたバッファ （緩衝部 ) としての液避け部 3 0は、 図 1及び図 2に示すように、 2つの隔壁 3The substrate processing apparatus of the present embodiment is an etching apparatus used for manufacturing a glass substrate for a liquid crystal display. As shown in FIG. 1, the substrate processing apparatus includes a receiving section 20, a liquid avoiding section 30, a chemical processing section 40, a cleaning section 50, and a liquid removing section arranged in order in the transport direction of the substrate 10. 60. Each section is equipped with a number of transport rollers 21, 31, 31, 41, 51, 61 for supporting the substrate 10 horizontally and transporting it horizontally. As shown in FIGS. 1 and 2, the liquid avoiding section 30 as a buffer (buffer section) provided between the receiving section 20 and the chemical processing section 40 has two partition walls 3.
2 a , 3 2 bにより基板 1 0の搬送方向で 3室 3 3 a， 3 3 b , 3 3 c に分割区画されている。 上流側の受け入れ部 2 0との隔壁に設けられた 入口には開閉式のシャッ夕一 3 4 aが装備されている。 同様に、 下流側 の薬液処理部 4 0との隔壁に設けられた出口にも開閉式のシャッター 3 4 bが装備されている。 また、 前記隔壁 3 2 a， 3 2 bには基板 1 0カ 通過するスリッ ト状の通過口が設けられている。 The two chambers 33a, 33b, and 33c are divided into three chambers 33a, 33b, and 33c in the transport direction of the substrate 10 by 2a and 32b. The entrance provided in the partition wall with the receiving part 20 on the upstream side is equipped with an openable / closable shutter 34a. Similarly, an opening / closing shutter 34 b is provided at an outlet provided in a partition wall with the chemical solution processing section 40 on the downstream side. Further, the partition walls 32a and 32b are provided with slit-like passage ports through which the substrate 10 passes.
上流側の受け入れ部 2 0に隣接する上流側の第 1室 3 3 aはクリーン ルームとなり、 若干陽圧に管理される構成になっている。 中央の第 2室 The first chamber 33a on the upstream side adjacent to the receiving part 20 on the upstream side is a clean room and is configured to be maintained at a slightly positive pressure. The second room in the center
3 3 bは、 底面に設けられた排気口 3 5より内部が負圧に吸弓 (排気され る構成になっている。 下流側の薬液処理部 4 0に隣接する第 3室 3 3 c は、 薬液処理部 4 0から侵入する薬液 （ここではエッチング液） を排出 するために、 底面に排液口 3 6を設けた構造になっている。 33 b has a configuration in which the inside is sucked (exhausted) to a negative pressure from an exhaust port 35 provided on the bottom surface. The third chamber 33 c adjacent to the chemical processing section 40 on the downstream side is In order to discharge a chemical solution (etching solution in this case) entering from the chemical solution processing section 40, a drain port 36 is provided on the bottom surface.
液避け部 2 0の全長 L 1は基板 1 0の長さ L 2より大である。 また、 2番目の隔壁 3 2 bから下流側の薬液処理部 4 0における薬液吐出開始 位置までの距離 L 3は、 基板 1 0の長さ L 2より大に設定されている。 薬液処理部 4 0には、 基板 1 0の上面に上方から薬液 （ここではエツ チング液） を供給するノズルュニッ ト 4 2力^ 基板 1 0の搬送ラインの 上方に位置にして設けられている。  The total length L 1 of the liquid avoiding portion 20 is larger than the length L 2 of the substrate 10. Further, the distance L 3 from the second partition 32 b to the chemical solution discharge start position in the chemical solution processing section 40 on the downstream side is set to be longer than the length L 2 of the substrate 10. The chemical processing section 40 is provided above the upper surface of the substrate 10 with a nozzle unit 42 for supplying a chemical (an etching liquid in this case) from above to a position above the transport line of the substrate 10.
洗浄部 5 0には、 基板 1 0の上面に上方から純水をシャワー状に散布 する第 1のシャワーュニッ ト 5 2と、 基板 1 0の下面に下方から純水を シャワー状に散布する第 2のシャワーュニッ ト 5 3力、基板 1 0の搬送 ラインを挟んで設けられている。  The cleaning unit 50 includes a first shower unit 52 for spraying pure water from above on the upper surface of the substrate 10 in a shower shape, and a second shower unit for spraying pure water from below onto the lower surface of the substrate 10. The shower unit 53 is provided with a transfer line for the substrate 10 therebetween.
液切り部 6 0には、 基板 1 0の搬送ラインを上下から挟むように配置 された上下一対のエアナイフ用のスリットノズル 6 2， 6 3が設けられ ている。 上側のスリッ トノズル 6 2は、 基板 1 0の上面に全幅にわたつ てエアを薄膜状に吹き付けることにより、 洗浄後の基板 1 0の上面から 水滴 ·水分を除去する。 下側のスリットノズル 6 3は、 基板 1 0の下面 に全幅にわたってエアを薄膜状に吹き付けることにより、 洗浄後の基板 1 0の下面から水滴 ·水分を除去する。 上下のスリッ トノズル 6 2 , 6 3は、 水滴 ·水分の除去効率を高めるために、 側面視で基板 1 0の搬送 方向上流側に傾斜し、 平面視では側方へ傾斜している。 The liquid draining section 60 is provided with a pair of upper and lower slit nozzles 62, 63 for air knives arranged so as to sandwich the transfer line of the substrate 10 from above and below. ing. The upper slit nozzle 62 removes water droplets and moisture from the cleaned upper surface of the substrate 10 by blowing air over the entire surface of the substrate 10 in a thin film shape. The lower slit nozzle 63 removes water droplets and moisture from the cleaned lower surface of the substrate 10 by blowing air in a thin film shape over the entire lower surface of the substrate 10. The upper and lower slit nozzles 62, 63 are tilted upstream in the transport direction of the substrate 10 in a side view and sideways in a plan view in order to increase the efficiency of removing water droplets and moisture.
本実施形態の基板処理装置においては、 基板 1 0が受け入れ部 2 0、 液避け部 3 0、 薬液処理部 4 0、 洗浄部 5 0及び液切り部 6 0を順に通 過することにより、 基板 1 0の上面に薬液処理 （ここではエッチング処 理） が施され、 上下面が洗浄された後、 乾燥処理される。  In the substrate processing apparatus of the present embodiment, the substrate 10 passes through the receiving section 20, the liquid avoiding section 30, the chemical processing section 40, the cleaning section 50, and the liquid removing section 60 in this order, and The upper surface of the substrate 10 is subjected to a chemical treatment (here, an etching process), and the upper and lower surfaces are cleaned and then dried.
基板 1 0が受け入れ部 2 0から液避け部 3 0へ進入するとき、 両部を 仕切るシャッター 3 4 aが開方向へ操作され、 入口が開放される。 この とき、 中央の第 2室 3 3 bは負圧に排気されている。 また、 液避け部 4 0と薬液処理部 4 0を仕切るシャッター 3 4 bは閉方向へ操作され、 出 口は閉止している。 この状態で、 基板 1 0は液避け部 3 0内へ進入する 。 基板 1 0が液避け部 3 0内に完全に進入すると、 その基板 1 0は一旦 停止し、 この間に先ずシャッター 3 4 aが閉じ、 次いでシャッター 3 4 bが開く。 こうすることにより、 受け入れ部 2 0と薬液処理部 4 0が直 結する事態が回避される。  When the substrate 10 enters the liquid avoiding part 30 from the receiving part 20, the shutter 34 a separating the two parts is operated in the opening direction, and the entrance is opened. At this time, the central second chamber 33b is exhausted to a negative pressure. Further, the shutter 34b that separates the liquid avoiding section 40 and the chemical processing section 40 is operated in the closing direction, and the outlet is closed. In this state, the substrate 10 enters the liquid avoiding section 30. When the substrate 10 completely enters the liquid avoidance section 30, the substrate 10 stops temporarily, during which the shutter 34a first closes, and then the shutter 34b opens. This avoids a situation in which the receiving section 20 and the chemical processing section 40 are directly connected.
シャッター 3 4 bが開くと、 基板 1 0の搬送が再開され、 基板 1 0は 液避け部 3 0から薬液処理部 4 0へ出でいく。 そして、 基板 1 0の先端 がノズルュニッ ト 4 2に達した時点で薬液吐出が開始される。  When the shutter 34b is opened, the transport of the substrate 10 is restarted, and the substrate 10 exits from the liquid avoiding section 30 to the chemical processing section 40. Then, when the tip of the substrate 10 reaches the nozzle unit 42, the discharge of the chemical solution is started.
薬液吐出が始まると、 基板 1 0の上面を伝って薬液が液避け部 3 0に 多量に侵入する。 しかし、 薬液吐出が開始した時点で、 基板 1 0の後端 は第 3室 3 3 cに完全に進入している。 このため、 液避け部 3 0に多量 に侵入する薬液は、 第 3室 3 3 cのみに入り、 第 1室 3 3 a及び第 2室When the discharge of the chemical starts, a large amount of the chemical penetrates the upper surface of the substrate 10 and enters the liquid avoiding part 30. However, the rear end of the substrate 10 has completely entered the third chamber 33c at the time when the discharge of the chemical solution has started. Because of this, a large amount The chemical liquid entering the chamber enters only the third chamber 33c, and the first chamber 33a and the second chamber 33c.
3 3 bには入らない。 第 3室 3 3 cに侵入する薬液は、 第 3室 3 3 cに 溜められた純水により希釈され、 排液口 3 6より逐次外部へ排出される このとき、 第 1室 3 3 aは陽圧に管理され、 第 2室 3 3 bは負圧に吸 引されている。 このため、 第 3室 3 3 cから直接、 或いは薬液処理部 4 0から第 3室 3 3 cを介して薬液の蒸気が第 2室 3 3 bに侵入する力 同時に、 第 1室 3 3 aから第 2室 3 3 bへの気流も形成される。 このた め、 薬液やその蒸気が第 1室 3 3 aに侵入する事態は回避される。 即ち 、 受け入れ部 2 0と接する第 1室 3 3 aは、 液 ·ガスの両面から常時な クリーンなゾーンになる。 このため、 薬液雰囲気が受け入れ部 2 0に侵 入する危険性は皆無となる。 Do not enter 3 3 b. The chemical liquid that enters the third chamber 33c is diluted by the pure water stored in the third chamber 33c, and is sequentially discharged to the outside through the drain port 36. Controlled at positive pressure, the second chamber 33b is sucked at negative pressure. Therefore, the force of the vapor of the chemical into the second chamber 33b directly from the third chamber 33c or from the chemical processing section 40 via the third chamber 33c, and at the same time, the first chamber 33a An airflow from the second chamber 33b is also formed. For this reason, a situation in which the chemical solution or its vapor enters the first chamber 33a is avoided. That is, the first chamber 33a in contact with the receiving part 20 is always a clean zone from both sides of liquid and gas. For this reason, there is no danger of the chemical atmosphere entering the receiving part 20.
このように、 受け入れ部 2 0の下流側に配置される液避け部 3 0を 3 室に分け、 中央の第 2室 3 3 bを負圧に吸引すると共に、 基板 1 0の上 面を伝って薬液が第 2室 3 3 bや上流側の第 1室 3 3 aに侵入しないェ 夫を講じることにより、 薬液に汚染されない常時クリーンな領域を、 液 避け部 3 0内の受け入れ部 2 0と隣接する部分に形成することができる 。 これにより、 基板 1 0が液避け部 3 0から抜け出るのを待たず、 基板 1 0が液避け部 3 0の出口を通過する途中から薬液処理部 4 0で薬液の 吐出を開始するにもかかわらず、 受け入れ部 2 0内の薬液による汚染を 完全に防止することが可能になる。  In this way, the liquid avoiding section 30 disposed downstream of the receiving section 20 is divided into three chambers, and the central second chamber 33 b is sucked to a negative pressure and transmitted along the upper surface of the substrate 10. By taking measures to prevent the chemical solution from entering the second chamber 33b or the first chamber 33a on the upstream side, a clean area that is not always contaminated with the chemical solution can be kept in the liquid avoidance section 30. And can be formed in a portion adjacent to. This allows the chemical solution processing unit 40 to start discharging the chemical solution while the substrate 10 passes through the outlet of the liquid avoidance unit 30 without waiting for the substrate 10 to escape from the liquid avoidance unit 30. Therefore, it is possible to completely prevent contamination by the chemical solution in the receiving portion 20.
ちなみに、 基板 1 0が液避け部 3 0の出口を通過し終え、 そのシャツ 夕一 3 4 bを閉じてから薬液処理を開始する構成にすると、 薬液処理部 By the way, if the substrate 10 is finished to pass through the exit of the liquid avoidance part 30 and the shirt is closed 34 b, then the chemical processing is started, the chemical processing part
4 0内のノズルュニッ ト 4 2より前方に基板 1 0の長さを超えるスぺ一 スが必要になり、 装置が大型化する。 また、 処理時間が長くなり、 スルA space exceeding the length of the substrate 10 is required in front of the nozzle unit 42 in 40, and the apparatus becomes large. Also, the processing time becomes longer,
—プッ ト性が悪化する。 なお、 上記実施形態はエッチング装置であるが、 剝離装置にも同様に 適用可能である。 産業上の利用可能性 —Puttability deteriorates. Although the above embodiment is an etching apparatus, the present invention can be similarly applied to a separation apparatus. Industrial applicability
以上に説明したとおり、 本発明の基板処理装置は、 基板を水平方向へ 搬送して複数の処理部に通過させ、 複数の処理部の少なくとも 1つで薬 液処理を行うと共に、 薬液処理部の上流側に液避け部を設けた搬送式基 板処理装置において、 前記液避け部内を複数の隔壁により基板搬送方向 で複数室に区画し、 前記液避け部内の最上流側の室内を除く少なくとも 1の室内を負圧に吸引することにより、 液避け部の出口を通過する段階 から下流側の薬液処理部でシャワー等の薬液散布操作を開始しても、 上 流側の受け入れ部の薬液汚染を効果的に防止することができる。  As described above, the substrate processing apparatus of the present invention transports a substrate in the horizontal direction, passes the substrate through the plurality of processing units, performs the chemical processing in at least one of the plurality of processing units, and performs the chemical processing in the chemical processing unit. In the transport type substrate processing apparatus provided with a liquid avoiding section on the upstream side, the inside of the liquid avoiding section is divided into a plurality of chambers in a substrate transport direction by a plurality of partition walls, and at least one chamber except the most upstream chamber in the liquid avoiding section is provided. Even if a chemical spraying operation such as a shower is started in the downstream chemical processing section from the stage of passing through the outlet of the liquid avoiding section, chemical contamination in the upstream receiving section can be prevented by suctioning the interior of the chamber to a negative pressure. It can be effectively prevented.

Claims

請 求 の 範 囲 The scope of the claims
1 . 基板を水平方向へ搬送して複数の処理部に通過させ、 複数の処理部 の少なくとも 1つで薬液処理を行うと共に、 薬液処理部の上流側に液避 け部を設けた搬送式基板処理装置において、 前記液避け部内を少なくと も 1つの隔壁により基板搬送方向で複数室に区画し、 前記液避け部内の 最上流側の室内を除く少なくとも 1つの室内を負圧に吸引する排気手段 を設けたことを特徵とする搬送式基板処理装置。  1. The substrate is transported in the horizontal direction and passed through a plurality of processing units. At least one of the plurality of processing units performs chemical liquid processing, and a transfer-type substrate provided with a liquid evacuating unit upstream of the chemical liquid processing unit. In the processing apparatus, an exhaust unit that divides the inside of the liquid avoiding section into a plurality of chambers in the substrate transport direction by at least one partition, and suctions at least one of the chambers except the most upstream chamber in the liquid avoiding section to a negative pressure. A transfer type substrate processing apparatus characterized in that a substrate is provided.
2 . 前記液避け部における最上流側の室内が常圧又は陽圧に管理されて いる請求の範囲第 1項に記載の搬送式基板処理装置。  2. The transfer-type substrate processing apparatus according to claim 1, wherein the most upstream chamber in the liquid avoiding section is controlled at normal pressure or positive pressure.
3 . 前記液避け部が基板搬送方向で 3以上の室に区画されており、 前記 液避け部における最上流側の室内及び最下流側の室内を除く少なくとも 1つの室内が負圧に吸引される請求の範囲第 1項に記載の搬送式基板処  3. The liquid avoiding section is divided into three or more chambers in the substrate transfer direction, and at least one chamber of the liquid avoiding section except for the most upstream chamber and the most downstream chamber is sucked to a negative pressure. The transfer-type substrate processing apparatus according to claim 1
4 . 前記液避け部が基板搬送方向で 3以上の室に区画されており、 前記 液避け部における最上流側の室内から最下流側の室内にかけて段階的に 圧力が低下する請求の範囲第 1項に記載の搬送式基板処理装置。 4. The liquid avoiding section is divided into three or more chambers in the substrate transfer direction, and the pressure decreases stepwise from the most upstream chamber to the most downstream chamber in the liquid avoiding section. A transfer type substrate processing apparatus according to the above item.
5 . 前記液避け部が基板搬送方向で 3以上の室に区画されており、 基板 の前端が下流側の薬液処理部における薬液吐出開始位置に到達した時点 で、 基板の後端が前記液避け部における最上流側の室内を抜け出るよう に、 隔壁位置が設定されている請求の範囲第 1項に記載の搬送式基板処  5. The liquid avoiding section is divided into three or more chambers in the substrate transfer direction, and when the front end of the substrate reaches the chemical liquid discharge start position in the downstream chemical processing section, the rear end of the substrate avoids the liquid. 2. The transport-type substrate processing apparatus according to claim 1, wherein the partition wall position is set so as to escape from the most upstream chamber in the section.
6 . 基板の前端が薬液処理部における薬液吐出開始位置に到達した時点 で基板の後端が液避け部における最下流側の室内に進入するように、 隔 壁位置が設定されている請求の範囲第 5項に記載の搬送式基板処理装置 ο 6. The partition wall position is set so that when the front end of the substrate reaches the chemical solution discharge start position in the chemical processing section, the rear end of the substrate enters the most downstream chamber in the liquid avoidance section. Conveyance type substrate processing equipment described in paragraph 5 ο
7 . 前記液避け部の全長が基板の長さより大であり、 前記液避け部の基 板入口及び出口にシャッターが装備されている請求の範囲第 1項に記載 の搬送式基板処理装置。 7. The total length of the liquid avoiding portion is larger than the length of the substrate, and 2. The transport-type substrate processing apparatus according to claim 1, wherein shutters are provided at an entrance and an exit of the plate.
PCT/JP2002/000906 2002-02-04 2002-02-04 Substrate processing apparatus of transfer type WO2003066486A1 (en)

Priority Applications (5)

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PCT/JP2002/000906 WO2003066486A1 (en) 2002-02-04 2002-02-04 Substrate processing apparatus of transfer type
JP2003565876A JP4044047B2 (en) 2002-02-04 2002-02-04 Transport type substrate processing equipment
CNA02808277XA CN1503758A (en) 2002-02-04 2002-02-04 Substrate processing apparatus of transfer type
KR10-2004-7011860A KR20040078684A (en) 2002-02-04 2002-02-04 Substrate processing apparatus of transfer type
TW092102118A TW593090B (en) 2002-02-04 2003-01-30 Substrate-treatment equipment of transporting type

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JP4817802B2 (en) * 2005-10-31 2011-11-16 東京応化工業株式会社 Transport processing device
CN102473627B (en) * 2009-07-23 2014-11-05 夏普株式会社 Wet etching apparatus and wet etching method
WO2012035722A1 (en) * 2010-09-14 2012-03-22 古河機械金属株式会社 Processing device
JP6732213B2 (en) * 2016-11-16 2020-07-29 日本電気硝子株式会社 Glass substrate manufacturing method
CN109920724A (en) * 2019-01-30 2019-06-21 矽品科技（苏州）有限公司 A kind of method of quick removal substrate organic solderability preservatives and oxide

Citations (2)

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Publication number Priority date Publication date Assignee Title
JPH06208988A (en) * 1992-02-21 1994-07-26 Chuo Riken:Kk Wet treating apparatus
JP2001267256A (en) * 2000-03-22 2001-09-28 Semiconductor Energy Lab Co Ltd Substrate processing system

Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
JPH06208988A (en) * 1992-02-21 1994-07-26 Chuo Riken:Kk Wet treating apparatus
JP2001267256A (en) * 2000-03-22 2001-09-28 Semiconductor Energy Lab Co Ltd Substrate processing system

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KR20040078684A (en) 2004-09-10
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