JP2008219043A - Solution treatment apparatus and solution treatment method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a solution treatment apparatus and a solution treatment method each of which is capable of performing uniform solution treatment on an entire substrate even if the substrate is large without increasing its foot print. <P>SOLUTION: A conveying mechanism 14 which conveys a substrate G from an introduction zone 24a to a developing solution removal zone 24d through a developing solution supply zone 24b in a substantially horizontal attitude, and a developing solution supply mechanism 60 which discharges a developing solution from a developing solution discharge nozzle 51a and supplies the developing solution on the substrate G in the developing solution supply zone 24b are provided. The developing solution supply mechanism 60 is configured so that the developing solution is supplied on the substrate G while horizontally moving the developing solution discharge nozzle 51a on the substrate G; and the conveying mechanism 14 is configured so that the conveyance of the substrate G is stopped or a conveying velocity of the substrate G is decelerated lower than a substrate conveying velocity to the developing solution supply zone 24b in the developing solution supply zone 24b. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a liquid processing apparatus and a liquid processing method for performing liquid processing such as development processing on a substrate such as a glass substrate used in a liquid crystal display (LCD).

In the manufacture of LCD, after forming a resist film on an LCD glass substrate (hereinafter referred to as “LCD substrate”), the resist film is exposed with a predetermined circuit pattern, and further developed, so-called photolithography technology is used. The circuit pattern is formed on the LCD substrate. Here, for example, with respect to the development processing, in JP-A No. 2004-133867, a developing solution is applied to the surface of the substrate transported in a horizontal posture to form a paddle on the substrate, and the development reaction proceeds by holding for a predetermined time. A method and apparatus is disclosed.
JP-A-11-87210

  However, recently, there is a strong demand for large-sized LCD substrates, and even a huge one having a side of 1 m has appeared. When a developer is applied to the surface of the LCD substrate while transporting such a large LCD substrate in a horizontal position, the part where the developer is first applied and the part where the developer is applied last are in contact with the developer. As a result, the development reaction becomes uneven and it becomes difficult to obtain a uniform development pattern on the entire LCD substrate.

  The developer can be applied in a short time by increasing the LCD substrate transport speed. However, if the LCD substrate transport speed is increased, the LCD substrate is transported at the same speed within the time required for the development reaction. Therefore, it is necessary to increase the distance for transporting the LCD substrate, which causes a new problem that the footprint of the apparatus is widened. In order to shorten the transport distance of the LCD substrate, the LCD substrate on which the developer paddle is formed must be stopped suddenly. In this case, the developer on the LCD substrate spills off due to acceleration, and development is performed. The reaction cannot proceed sufficiently. Moreover, since the LCD substrate is suddenly stopped, a large load is applied to the LCD substrate, so that the LCD substrate may be damaged.

  The present invention has been made in view of such circumstances, and a liquid processing apparatus and a liquid processing capable of performing uniform liquid processing on the entire substrate even for a large substrate without increasing the footprint of the apparatus. It aims to provide a method.

  According to a first aspect of the present invention, there is provided a liquid processing apparatus that performs a development process on a substrate that has been subjected to an exposure process, the introduction zone for introducing the substrate, and the development for supplying the developer to the substrate. A liquid supply zone; a developer removal zone that removes the developer from the substrate; and a transport mechanism that transports the substrate from the introduction zone to the developer removal zone through the developer supply zone in a substantially horizontal posture. A developer supply mechanism that discharges the developer from a developer discharge nozzle and supplies the developer onto the substrate in the developer supply zone, and the developer supply mechanism discharges the developer. The developer is configured to supply the developer onto the substrate while horizontally moving the nozzle on the substrate, and the transport mechanism stops transport of the substrate in the developer supply zone, or the substrate Liquid processing apparatus according to claim that is configured to feed rate to slower than the substrate transport speed to the developing solution supply zone, it is provided.

  According to a second aspect of the present invention, there is provided a liquid processing method for performing development processing on a substrate that has been subjected to exposure processing, wherein the substrate is placed in a substantially horizontal posture from an introduction zone for introducing the substrate. A step of transporting the developer to the developer supply zone, and in the developer supply zone, the transport of the substrate is stopped, or the transport speed of the substrate is slower than the substrate transport speed to the developer supply zone And supplying the developer onto the substrate by discharging the developer from the developer discharge nozzle while horizontally moving the developer discharge nozzle on the substrate in the developer supply zone. And a step of transporting the substrate supplied with the developer to a developer removal zone for removing the developer from the substrate.

  ADVANTAGE OF THE INVENTION According to this invention, the liquid processing apparatus and the liquid processing method which can perform a uniform liquid process with the whole board | substrate even if it is a large sized substrate, without enlarging the footprint of an apparatus can be provided.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. Here, in this embodiment, the case where the present invention is applied to a development processing unit (DEV) that performs development processing of an LCD substrate subjected to exposure processing will be described as an example. FIG. 1 is a plan view showing a schematic configuration of a resist coating / development processing system 100 that includes a development processing unit (DEV) that is an embodiment of the present invention and continuously performs processing from formation of a resist film to development. It is.

  This resist coating / development processing system 100 performs a series of processes including resist coating and development on the cassette station (loading / unloading unit) 1 on which a cassette C accommodating a plurality of LCD substrates G is placed. A processing station (processing unit) 2 having a plurality of processing units, and an interface station (interface unit) 3 for transferring the LCD substrate G to and from the exposure apparatus 4. Cassette station 1 and interface station 3 are arranged at both ends, respectively. In FIG. 1, the longitudinal direction of the resist coating / development processing system 100 is the X direction, and the direction perpendicular to the X direction on the plane is the Y direction.

  The cassette station 1 includes a mounting table 9 on which the cassette C can be mounted in the Y direction, and a transfer device 11 for carrying the LCD substrate G in and out of the processing station 2. The cassette C is transported to the outside. Further, the transfer device 11 has a transfer arm 11a and can move on a transfer path 10 provided along the Y direction which is the arrangement direction of the cassettes C. The transfer arm 11a allows the cassette C and the processing station 2 to move. The LCD substrate G is carried in and out.

  The processing station 2 basically has two parallel rows of transfer lines A and B for transferring the LCD substrate G extending in the X direction, and is directed from the cassette station 1 side to the interface station 3 along the transfer line A. A scrub cleaning unit (SCR) 21, a first thermal processing unit section 26, a resist processing unit 23 and a second thermal processing unit section 27 are arranged.

  Further, a second thermal processing unit section 27, a development processing unit (DEV) 24, and an i-line UV irradiation unit (i-UV) 25 from the interface station 3 side toward the cassette station 1 along the transfer line B. And a third thermal processing unit section 28 is arranged. An excimer UV irradiation unit (e-UV) 22 is provided on a part of the scrub cleaning unit (SCR) 21. An excimer UV irradiation unit (e-UV) 22 is provided to remove organic substances on the LCD substrate G prior to scrubber cleaning, and an i-line UV irradiation unit (i-UV) 25 performs a decoloring process for development. Provided.

  In the scrub cleaning unit (SCR) 21, the cleaning process and the drying process are performed while the LCD substrate G is conveyed in a substantially horizontal posture. As will be described in detail later, the development processing unit (DEV) 24 is also adapted to perform the developer coating, the developer cleaning after the development, and the drying process while the LCD substrate G is transported substantially horizontally. In the scrub cleaning processing unit (SCR) 21 and the development processing unit (DEV) 24, the LCD substrate G is transported by, for example, roller transport or belt transport, and the carry-in port and the carry-out port of the LCD substrate G are short sides opposite to each other. Is provided. Further, the conveyance of the LCD substrate G to the i-line UV irradiation unit (i-UV) 25 is continuously performed by a mechanism similar to the conveyance mechanism of the development processing unit (DEV) 24.

  In the resist processing unit 23, a resist solution is dropped on the LCD substrate G held substantially horizontally, and the LCD substrate G is rotated at a predetermined rotation speed to spread the resist solution over the entire LCD substrate G, and a resist film is formed. The LCD substrate is formed by a resist coating processing device (CT) 23a to be formed, a vacuum drying device (VD) 23b for drying the resist film formed on the LCD substrate G under reduced pressure, and a solvent discharge head capable of scanning four sides of the LCD substrate G. A peripheral resist removing device (ER) 23c for removing excess resist adhering to the peripheral edge of G is arranged in that order. In the resist processing unit 23, a transport arm for transporting the LCD substrate G between the resist coating processing device (CT) 23a, the reduced pressure drying device (VD) 23b, and the peripheral resist removing device (ER) 23c is provided. ing.

  The first thermal processing unit section 26 includes two thermal processing unit blocks (TB) 31 and 32 configured by stacking thermal processing units that perform thermal processing on the LCD substrate G. The thermal processing unit block (TB) 31 is provided on the scrub cleaning processing unit (SCR) 21 side, and the thermal processing unit block (TB) 32 is provided on the resist processing unit 23 side. A first transport device 33 is provided between the two thermal processing unit blocks (TB) 31 and 32.

  As shown in the side view of the first thermal processing unit section 26 in FIG. 2, the thermal processing unit block (TB) 31 includes a pass unit (PASS) 61 for transferring the LCD substrate G in order from the bottom, and an LCD Two dehydration bake units (DHP) 62 and 63 for performing a dehydration bake process on the substrate G and an adhesion processing unit (AD) 64 for performing a hydrophobization process on the LCD substrate G are stacked in four stages. The thermal processing unit block (TB) 32 includes a pass unit (PASS) 65 for transferring the LCD substrate G in order from the bottom, and two cooling units (COL) for cooling the LCD substrate G. ) 66 and 67, and an adhesion processing unit (AD) 68 for applying a hydrophobic treatment to the LCD substrate G are stacked in four stages. That.

  The first transfer device 33 receives the LCD substrate G from the scrub cleaning processing unit (SCR) 21 via the pass unit (PASS) 61, carries in and out the LCD substrate G between the thermal processing units, and passes. The LCD substrate G is transferred to the resist processing unit 23 through the unit (PASS) 65.

  The first transport device 33 includes a guide rail 91 that extends vertically, a lifting member 92 that moves up and down along the guide rail 91, a base member 93 that can pivot on the lifting member 92, and a base member 93. It has a substrate holding arm 94 that is provided so as to be able to move forward and backward and holds the LCD substrate G. The elevating member 92 is moved up and down by the motor 95, the base member 93 is turned by the motor 96, and the substrate holding arm 94 is moved back and forth by the motor 97. Thus, the 1st conveyance apparatus 33 can be moved up and down, back and forth, and swiveled, and can access any unit of thermal processing unit block (TB) 31 * 32.

  The second thermal processing unit section 27 includes two thermal processing unit blocks (TB) 34 and 35 configured by stacking thermal processing units for performing thermal processing on the LCD substrate G. The thermal processing unit block (TB) 34 is provided on the resist processing unit 23 side, and the thermal processing unit block (TB) 35 is provided on the development processing unit (DEV) 24 side. A second transfer device 36 is provided between the two thermal processing unit blocks (TB) 34 and 35.

  As shown in the side view of the second thermal processing unit section 27 in FIG. 3, the thermal processing unit block (TB) 34 includes a pass unit (PASS) 69 and an LCD substrate for transferring the LCD substrate G in order from the bottom. Three pre-baking units (PREBAKE) 70, 71, 72 for pre-baking G are stacked in four stages, and the thermal processing unit block (TB) 35 is arranged on the LCD substrate G in order from the bottom. The pass unit (PASS) 73 for transferring the liquid crystal, the cooling unit (COL) 74 for cooling the LCD substrate G, and the two pre-baking units (PREBAKE) 75 and 76 for pre-baking the LCD substrate G are arranged in four stages. It has a laminated structure.

  The second transfer device 36 receives the LCD substrate G from the resist processing unit 23 through the pass unit (PASS) 69, carries in and out the LCD substrate G between the thermal processing units, and passes the pass unit (PASS) 73. The LCD substrate G is transferred to the development processing unit (DEV) 24 via the interface, and the LCD substrate G is transferred to and received from an extension / cooling stage (EXT / COL) 44 which is a substrate transfer portion of the interface station 3 described later. Do. The second transfer device 36 has the same structure as the first transfer device 33, and can access any unit of the thermal processing unit blocks (TB) 34 and 35.

  The third thermal processing unit section 28 includes two thermal processing unit blocks (TB) 37 and 38 configured by stacking thermal processing units for performing thermal processing on the LCD substrate G. The thermal processing unit block (TB) 37 is provided on the development processing unit (DEV) 24 side, and the thermal processing unit block (TB) 38 is provided on the cassette station 1 side. A third transfer device 39 is provided between the two thermal processing unit blocks (TB) 37 and 38.

  As shown in the side view of the third thermal processing unit section 28 in FIG. 4, the thermal processing unit block (TB) 37 includes, in order from the bottom, a pass unit (PASS) 77 that delivers the LCD substrate G, and Three post-baking units (POBAKE) 78, 79, and 80 for performing post-baking processing on the LCD substrate G are stacked in four stages. The thermal processing unit block (TB) 38 includes a post-bake unit (POBAKE) 81, a pass / cooling unit (PASS / COL) 82 for transferring and cooling the LCD substrate G, and an LCD substrate G in order from the bottom. , Two post-bake units (POBAKE) 83 and 84 for performing post-bake processing are stacked in four stages.

  The third transport device 39 receives the LCD substrate G from the i-ray UV irradiation unit (i-UV) 25 via the pass unit (PASS) 77, and carries the LCD substrate G in and out of the thermal processing unit. Then, the LCD substrate G is transferred to the cassette station 1 through the pass / cooling unit (PASS / COL) 82. The third transfer device 39 has the same structure as the first transfer device 33, and can access any unit of the thermal processing unit blocks (TB) 37 and 38.

  In the processing station 2, the processing units and the transport devices are arranged so as to form the transport lines A and B in two rows as described above and basically in the order of processing. A space 40 is provided between B. A shuttle (substrate mounting member) 41 is provided so as to be able to reciprocate in the space 40. The shuttle 41 is configured to be able to hold the LCD substrate G, and the LCD substrate G is transferred between the transport lines A and B via the shuttle 41. The delivery of the LCD substrate G to the shuttle 41 is performed by the first to third transfer devices 33, 36, and 39.

  The interface station 3 includes a transfer device 42 that loads and unloads the LCD substrate G between the processing station 2 and the exposure device 4, a buffer stage (BUF) 43 on which a buffer cassette is disposed, and a substrate transfer unit having a cooling function. And an external device block 45 in which a titler (TITLER) and a peripheral exposure device (EE) are vertically stacked are provided adjacent to the transport device 42. It has been. The transfer device 42 includes a transfer arm 42 a, and the LCD substrate G is carried in and out between the processing station 2 and the exposure device 4 by the transfer arm 42 a.

  In the resist coating / development processing system 100 configured as described above, first, the LCD substrate G in the cassette C arranged on the mounting table 9 of the cassette station 1 is transferred to the excimer UV irradiation unit of the processing station 2 by the transport device 11. (E-UV) 22 is directly carried in and scrub pretreatment is performed. Next, the LCD substrate G is carried into the scrub cleaning unit (SCR) 21 by the transfer device 11 and scrubbed. After the scrub cleaning process, the LCD substrate G is carried out to the pass unit (PASS) 61 of the thermal processing unit block (TB) 31 belonging to the first thermal processing unit section 26 by, for example, roller conveyance.

  The LCD substrate G placed in the pass unit (PASS) 61 is first transported to one of the dehydration bake units (DHP) 62 and 63 of the thermal processing unit block (TB) 31 and subjected to heat treatment, and then heated. Adhesion processing unit of thermal processing unit block (TB) 31 in order to improve the fixability of the resist after being transferred to one of cooling units (COL) 66 and 67 of static processing unit block (TB) 32 and cooled. (AD) 64 and the thermal processing unit block (TB) 32 are transported to one of the adhesion processing units (AD) 68, where they are subjected to adhesion processing (hydrophobization processing) by HMDS. Thereafter, the LCD substrate G is transferred to one of the cooling units (COL) 66 and 67 to be cooled, and further transferred to the pass unit (PASS) 65 of the thermal processing unit block (TB) 32. All the transfer processes of the LCD substrate G when performing such a series of processes are performed by the first transfer device 33.

  The LCD substrate G placed in the pass unit (PASS) 65 is carried into the resist processing unit 23 by the transfer arm of the resist processing unit 23. The LCD substrate G is spin-coated with a resist solution in a resist coating processing apparatus (CT) 23a, then transported to a reduced pressure drying apparatus (VD) 23b, dried under reduced pressure, and further transported to a peripheral resist removing apparatus (ER) 23c. Excess resist on the periphery of the LCD substrate G is removed. After the peripheral resist removal is completed, the LCD substrate G is received by the transfer arm from the resist processing unit 23 to the pass unit (PASS) 69 of the thermal processing unit block (TB) 34 belonging to the second thermal processing unit section 27. Passed.

  The LCD substrate G placed in the pass unit (PASS) 69 is pre-baked by the second transfer device 36 and the pre-bake units (PREBAKE) 70, 71, 72 of the thermal processing unit block (TB) 34 and the thermal processing unit block ( TB) is transported to one of the pre-baking units (PREBAKE) 75 and 76 of 35 and pre-baked, and then transported to the cooling unit (COL) 74 of the thermal processing unit block (TB) 35 to be cooled to a predetermined temperature. . Then, it is further transported by the second transport device 36 to the pass unit (PASS) 73 of the thermal processing unit block (TB) 35.

  Thereafter, the LCD substrate G is transported to the extension / cooling stage (EXT / COL) 44 of the interface station 3 by the second transport device 36, and the peripheral exposure device (EE) of the external device block 45 is transported by the transport device 42 of the interface station 3. Then, exposure for removing the peripheral resist is performed, and then transported to the exposure device 4 by the transport device 42, where the resist film on the LCD substrate G is exposed to form a predetermined pattern. In some cases, the LCD substrate G is accommodated in a buffer cassette on the buffer stage (BUF) 43 and then conveyed to the exposure device 4.

  After the exposure is finished, the LCD substrate G is carried into the upper titler (TITLER) of the external device block 45 by the transfer device 42 of the interface station 3 and predetermined information is written on the LCD substrate G, and then the extension cooling stage (EXT) • COL) 44. The LCD substrate G is passed from the extension / cooling stage (EXT / COL) 44 to the thermal processing unit block (TB) 35 pass unit (PASS) of the second thermal processing unit section 27 by the second transfer device 36. 73.

  The LCD substrate G is transferred from the pass unit (PASS) 73 to the development processing unit (DEV) 24 by, for example, a roller transport mechanism extending from the pass unit (PASS) 73 to the development processing unit (DEV) 24. Thus, development processing is performed. This development processing step will be described in detail later.

  After completion of the development processing, the LCD substrate G is conveyed from the development processing unit (DEV) 24 to the i-line UV irradiation unit (i-UV) 25 by a continuous conveyance mechanism, for example, roller conveyance, and the LCD substrate G is subjected to decoloring processing. Applied. After that, the LCD substrate G is passed through a pass unit (PASS) 77 of the thermal processing unit block (TB) 37 belonging to the third thermal processing unit section 28 by a roller transport mechanism in the i-line UV irradiation unit (i-UV) 25. It is carried out to.

  The LCD substrate G arranged in the pass unit (PASS) 77 is transferred to the post processing unit block (POBAKE) 78, 79, 80 of the thermal processing unit block (TB) 37 and the thermal processing unit block ( TB) It is transported to one of the post-baking units (POBAKE) 81, 83, 84 of 38 and post-baked, and then transported to the pass / cooling unit (PASS / COL) 82 of the thermal processing unit block (TB) 38. After being cooled to a predetermined temperature, it is accommodated in a predetermined cassette C disposed in the cassette station 1 by the transfer device 11 of the cassette station 1.

  Next, the structure of the development processing unit (DEV) 24 will be described in detail. FIG. 5 is a side view showing a schematic structure of the development processing unit (DEV) 24, and FIG. 6 is a plan view. The development processing unit (DEV) 24 includes an introduction zone 24a, a first developer supply zone 24b, a second developer supply zone 24c, a developer removal zone 24d, a rinse zone 24e, and a drying zone 24f. The introduction zone 24 a is adjacent to the pass unit (PASS) 73 of the thermal processing unit block (TB) 35, and the drying zone 24 f is adjacent to the i-line UV irradiation unit (i-UV) 25.

  Between the pass unit (PASS) 73 and the i-line UV irradiation unit (i-UV) 25, the roller substrate 17 conveys the LCD substrate G on the roller 17 in a predetermined direction by rotating the roller 17 by driving a motor or the like. The mechanism 14 is provided, and the roller transport mechanism 14 is operated to move the LCD substrate G from the pass unit (PASS) 73 through the development processing unit (DEV) 24 to the i-line UV irradiation unit (i-UV). It can be conveyed toward 25. A predetermined number of rollers 17 are provided in the transport direction of the LCD substrate G and in a direction perpendicular to the transport direction so that the LCD substrate G is unlikely to be bent. In FIG. 6, the roller transport mechanism 14 is not shown.

  In the development processing unit (DEV) 24, as shown in FIG. 5, the roller transport mechanism 14 is divided into three regions and can be driven independently for each region. The pass unit (PASS) 73 and the introduction zone 24a convey the LCD substrate G by driving the first motor 15a. The first developer supply zone 24b, the second developer supply zone 24c, and the developer removal zone 24d convey the LCD substrate G by driving the second motor 15b. Further, the rinse zone 24e and the drying zone 24f convey the LCD substrate G by driving the third motor 15c. Such divided driving of the roller transport mechanism 14 can be performed for each zone constituting the development processing unit (DEV) 24, for example.

  The pass unit (PASS) 73 includes elevating pins 16 that can be raised and lowered. When the lift pins 16 are lifted while the substrate holding arm 94 of the second transfer device 36 that holds the LCD substrate G enters the pass unit (PASS) 73, the LCD substrate G is lifted from the lift pins 16 from the substrate holding arm 94. Is passed on. Subsequently, when the lift pins 16 are lowered after the substrate holding arm 94 is withdrawn from the pass unit (PASS) 73, the LCD substrate G is placed on the roller 17 in the pass unit (PASS) 73. By driving the first motor 15a, the LCD substrate G is carried out from the pass unit (PASS) 73 to the introduction zone 24a.

  The introduction zone 24a is provided as a buffer area between the pass unit (PASS) 73 and the first developer supply zone 24b. The introduction zone 24a is connected to the first developer supply zone 24b. The pass unit (PASS) 73 is prevented from being contaminated by, for example, the developer scattering to the pass unit (PASS) 73.

  The first developer supply zone 24b is a zone in which liquid deposition (paddle formation) of the first developer is performed on the LCD substrate G conveyed from the introduction zone 24a, and the developer is applied to the LCD substrate G. A developer supply mechanism 60 is provided.

  FIG. 7 is a front view of the structure of the first developer supply zone 24b as viewed from the upstream side in the transport direction of the LCD substrate G. FIG. The developer supply mechanism 60 includes two nozzles, a main developer discharge nozzle 51a and a sub-developer discharge nozzle 51b (hereinafter referred to as development nozzles 51a and 51b) that discharge the developer onto the LCD substrate G. A nozzle fixing member 55 for fixing the nozzles, a nozzle holding member 56 for holding the nozzle fixing member 55, a lifting device 57 for moving the nozzle holding member 56 up and down, and a nozzle movement for scanning the developing nozzles 51a and 51b in the X direction. And a mechanism 60a.

  The nozzle moving mechanism 60a includes an arched arm 58 that holds the lifting device 57, a guide rail 59a, a drive mechanism 46 that scans the arched arm 58 along the guide rail 59a, and a rail holding member that holds the guide rail 59a. 59b and a guide fixing base 59c for fixing the rail holding member 59b. Further, the developer supply mechanism 60 has a control mechanism 47 that controls the operations of the lifting device 57 and the drive mechanism 46. The control mechanism 47 discharges and discharges the developer from the developing nozzles 51a and 51b. Can be controlled to start and stop.

  In FIG. 7, the configuration of the roller transport mechanism 14 is shown side by side. That is, the roller transport mechanism 14 extends in the transport direction (X direction) of the LCD substrate G, and rotates around the X axis by the second motor 15b (not shown in FIG. 7; see FIG. 5); A first gear 19a that is fixed to the pivot 19 and rotates around the X axis, a pivot 18 that is long in the width direction (Y direction) of the LCD substrate G and that has rollers 17 attached at predetermined intervals, and a first gear 19 at one end of the pivot 18 The second gear 18a is attached to mesh with the first gear 19a and converts the rotation of the first gear 19a around the X axis into the rotation around the Y axis. The second gear 18a is attached to the other end of the pivot shaft 18 and rotates. Is attached to the pivot 19 ′ so as to mesh with the third gear 18b, the third gear 18b rotating around the X axis, and the third gear 18b. Rotation around the X axis A fourth gear 19b for converting to

  In the roller transport mechanism 14, the drive unit for rotating the pivot 18 is composed of a pivot 19, a first gear 19 a, a second gear 18 a, and a second motor 15 b, and a third gear 18 b, a pivot 19 ′, and a fourth gear. 19b smoothly rotates the pivot 18 and plays a role of supporting the pivot 18.

  FIG. 8 is a perspective view showing the structure of the main developer discharge nozzle 51a. The main developer discharge nozzle 51a has a structure that is long in the width direction (Y direction) of the LCD substrate G. A developing solution supply pipe 49a is provided at the upper center of the main developing solution discharge nozzle 51a to feed the developing solution to the main developing solution discharge nozzle 51a, and a discharge formed along the longitudinal direction at the lower end thereof. The developer can be discharged in a substantially strip shape from the outlet 49b. The sub developer discharge nozzle 51b has the same structure as the main developer discharge nozzle 51a.

  The developing nozzles 51a and 51b are held in parallel at a predetermined interval by a nozzle fixing member 55 so that the longitudinal direction coincides with the Y direction. The developing nozzles 51a and 51b can be moved up and down by driving the lifting and lowering device 57 to raise and lower the nozzle holding member 56, so that the gap between the discharge ports 49b of the developing nozzles 51a and 51b and the surface of the LCD substrate G can be increased. The gap can be adjusted. Further, a fitting portion 58a that is fitted to the guide rail 59a is formed at both ends of the arched arm 58, and the arched arm 58 is slidable in the X direction, which is the longitudinal direction of the guide rail 59a, by the drive mechanism 46. It has become.

  In the developing solution supply mechanism 60, the developing nozzles 51a and 51b are scanned in the X direction while discharging a substantially strip-like developing solution that is long in the Y direction from the developing nozzles 51a and 51b to the LCD substrate G (that is, the arch type). By sliding the arm 58 in the X direction), the developer can be deposited on the surface of the LCD substrate G.

  In order to perform the development process uniformly on the entire LCD substrate G, it is necessary to uniformly apply the developer necessary for the development reaction on the LCD substrate G in the shortest possible time. By using the two developing nozzles 51a and 51b, it is possible to discharge a predetermined amount of developer in a short time and stably. The scanning speed of the developing nozzles 51a and 51b is preferably 100 mm / second or more and 500 mm / second or less.

  When the scanning speed of the developing nozzles 51a and 51b is smaller than 100 mm / second, the same processing can be performed by changing the transport speed of the LCD substrate G without scanning the developing nozzles 51a and 51b. The merit of scanning the developing nozzles 51a and 51b cannot be found. On the other hand, when the speed is higher than 500 mm / second, the liquid build-up speed is too high, so that a portion where the developer does not pour out occurs or the developer is liable to spill from the LCD substrate G. If the scanning speeds of the developing nozzles 51a and 51b are within this range, even when the length of the LCD substrate G is taken into account, the time difference between the beginning and the end of the depositing does not become a problem, and the developer can be deposited.

  Further, the number of times of liquid deposition on the LCD substrate G is not limited to one, and a plurality of liquid deposition processes can be performed. For example, after the liquid has been deposited on the LCD substrate G once, the developing nozzles 51a and 51b may be raised, returned to their original positions, and the liquid accumulation operation may be performed again.

  FIG. 9A is a side view showing the arrangement form of the developing nozzles 51a and 51b shown in FIG. 5 in more detail. FIG. 9B shows the development while discharging the developing solution from the developing nozzles 51a and 51b. It is explanatory drawing which shows the state which scanned the nozzles 51a and 51b.

  In the developer supply mechanism 60, when the developer is deposited on the surface of the LCD substrate G, the arched arm 58 is scanned in the direction opposite to the conveyance direction of the LCD substrate G. The main developer discharge nozzle 51a is arranged on the upstream side in the substrate transport direction so that the developer is applied to the LCD substrate G first from the main developer discharge nozzle 51a, and the sub developer discharge nozzle 51b is in the substrate transport direction. It is arranged downstream. In order to advance the development reaction by discharging the developer from the sub developer discharge nozzle 51b and replenishing the developer discharged from the main developer discharge nozzle 51a and accumulated on the LCD substrate G. Sufficient developer is supplied to the LCD substrate G, whereby the development time can be shortened and the development accuracy can be improved.

  When scanning the developing nozzles 51a and 51b, the lower end of the sub-developing liquid discharge nozzle 51b pushes the developing liquid already discharged onto the LCD substrate G by the main developing liquid discharge nozzle 51a in the scanning direction of the developing nozzles 51a and 51b. (See FIG. 9B), the gap width (gap) D between the sub developer discharge nozzle 51b and the LCD substrate G is larger than the gap width d between the main developer discharge nozzle 51a and the LCD substrate G. It is preferable to set a wide range.

  For example, the gap width d is set to 1.5 mm to 2.5 mm, and the gap width D is set to 3 mm to 5 mm. When the gap width d is less than 1.5 mm, the alignment of the main developer discharge nozzle 51a is somewhat difficult. Further, when the gap width d is more than 2.5 mm, bubbles are caught in the developing solution when the developing solution is discharged, and the bubbles adhere to the surface of the LCD substrate G, and there is a possibility that development failure may occur in that portion. is there. If the gap width D is more than 5 mm, the developer already applied to the LCD substrate G is greatly agitated, thereby causing a problem that the line width uniformity is lowered. In addition, entrainment of bubbles and the like can be prevented by preventing the distance from the surface of the developer accumulated on the LCD substrate G by the main developer discharge nozzle 51a from exceeding 1 mm.

  The developing nozzles 51a and 51b are inclined at an angle θ of 5 degrees or more and 15 degrees or less with respect to the vertical direction so that the developer is discharged obliquely downward and rearward in the scanning direction during scanning by the nozzle moving mechanism 60a. Is retained.

  For example, when the developer discharged from the main developer discharge nozzle 51a to the LCD substrate G is likely to spread forward in the scanning direction of the main developer discharge nozzle 51a, the main developer discharge nozzle 51a is directed to the LCD substrate G. Since the impact of the discharged developer on the LCD substrate G (the momentum at which the developer hits the LCD substrate G) is applied from above the developer previously applied on the LCD substrate G, the developer is directly applied to the LCD substrate. Compared with the case of discharging to G, it is weakened. This causes a problem that the developing accuracy is lowered.

  By inclining the main developer discharge nozzle 51a by a predetermined angle θ, the developer discharged from the main developer discharge nozzle 51a is difficult to spread forward in the scanning direction of the development nozzles 51a and 51b. Thereby, since the impact of the developer discharged from the main developer discharge nozzle 51a is directly applied to the LCD substrate G, the development accuracy can be improved.

  Since a new developing solution is newly discharged from the developing solution discharged from the main developing solution discharge nozzle 51a from the sub developing solution discharge nozzle 51b, the developing solution discharged from the sub developing solution discharge nozzle 51b is originally Compared with the case of the main developer discharge nozzle 51a, the LCD substrate G is not greatly affected. It is preferable that the sub developer discharge nozzle 51b is also inclined by a predetermined angle θ so that the developer previously applied to the LCD substrate G is not greatly stirred by the developer discharged from the sub developer discharge nozzle 51b.

  As described above, in the first developer supply zone 24b, the developer is ejected onto the LCD substrate G while the developing nozzles 51a and 51b are scanned, so that it is not necessary to transport the LCD substrate G at a high speed. As a result, it is possible to prevent the occurrence of an accident in which the LCD substrate G is distorted or broken due to overrun at the time of transport of the LCD substrate G or sudden stop of the transport. In addition, since it is not necessary to stop the LCD substrate G suddenly after supplying the developer, it is possible to prevent the developer accumulated on the LCD substrate G from falling out and to use the developer efficiently. Become.

  In the first developer supply zone 24b, while the LCD substrate G is transported at a low speed or the LCD substrate G is stopped, the developer can be deposited, but the LCD substrate G is stopped and the developer is supplied. When the coating method is used, it can be performed in a particularly stable state, whereby the line width uniformity can be improved.

  While the LCD substrate G on which the developer is deposited in the first developer supply zone 24b is transported to the developer removal zone 24d, the developer may spill from the LCD substrate G. In the second developer supply zone 24c, in order to prevent the development reaction from proceeding due to the developer spilling from the LCD substrate G during the transportation of the LCD substrate, a new developer is replenished to the LCD substrate G. can do.

  In the second developer supply zone 24c, the developer replenishment nozzle 51c having the same structure as the main developer discharge nozzle 51a has the same structure as the arched arm 58 so that the longitudinal direction thereof is the Y direction. It is being fixed to the immovable arm (not shown) which has. From the developer replenishing nozzle 51c, a predetermined amount of developer is discharged in a substantially strip shape in the Y direction onto the LCD substrate G transported by the roller transport mechanism 14, and thus the developer spilled from the LCD substrate G during transport is replenished. Is done.

  For example, a posture changing mechanism (not shown) that converts the LCD substrate G into an oblique posture and a rinsing liquid (for example, pure water) for washing the developer onto the surface of the LCD substrate G are discharged into the developer removal zone 24d. A rinse liquid discharge nozzle 52 is provided. The development reaction on the LCD substrate G is performed while being conveyed from the first developer supply zone 24b to the developer removal zone 24d. In the developer removal zone 24d, the LCD substrate G is converted into an oblique posture, the developer on the LCD substrate G is poured off, and further, the LCD substrate G is held in the oblique posture, and the lower side from the upper end of the LCD substrate G is lowered. By discharging pure water onto the surface of the LCD substrate G while scanning the rinse liquid discharge nozzle 52 along the surface of the LCD substrate G toward the end, the developer on the LCD substrate G is washed away.

  The rinse liquid discharge nozzle 52 can be scanned at a speed of, for example, 500 mm / second so that the developer can be washed away in a short time. Actually, by setting the scanning speed of the rinsing liquid discharge nozzle 52 between 100 mm / sec and 300 mm / sec, more preferably between 200 mm / sec and 300 mm / sec, the line width uniformity of the development pattern is improved. It is done. As the rinsing liquid discharge nozzle 52, as in the developing nozzles 51a and 51b, a rinsing liquid having a structure capable of discharging the rinsing liquid in a film shape is preferably used, thereby preventing development unevenness.

  A rinse nozzle 53 that discharges a rinse liquid such as pure water toward the LCD substrate G is attached to the rinse zone 24e. In the rinsing zone 24e, the rinsing liquid is discharged onto the front and back surfaces of the LCD substrate G while the LCD substrate G is conveyed at a predetermined speed, and the developer adhering to the LCD substrate G is removed and washed. The rinsing nozzle 53 has a shape longer than the width of the LCD substrate G, and is capable of discharging the rinsing liquid over the entire width direction of the LCD substrate G.

  An air nozzle (air knife) 54 that injects a dry gas such as nitrogen gas at a predetermined wind pressure is provided in the dry zone 24f to which the LCD substrate G that has passed through the rinse zone 24e is transported. In the drying zone 24f, the LCD substrate G is dried by spraying a drying gas onto the front and back surfaces of the LCD substrate G while the LCD substrate G is being conveyed at a predetermined speed, and blowing off the rinse liquid adhering to the LCD substrate G. The air nozzle 54 has a shape longer than the width of the LCD substrate G, and can discharge the dry gas over the entire width direction of the LCD substrate G. The LCD substrate G that has been dried is transported to the i-ray UV irradiation unit (i-UV) 25 by the roller transport mechanism 14.

  Next, the development processing steps in the development processing unit (DEV) 24 will be described. FIG. 10 is an explanatory diagram (flow chart) showing an outline of the development processing step. The LCD substrate G carried into the pass unit (PASS) 73 passes through the introduction zone 24a and is carried into the first developer supply zone 24b by the roller transport mechanism 14 (step 1). The conveyance speed of the LCD substrate G from the pass unit (PASS) 73 to the first developer supply zone 24b is, for example, 65 mm / second.

  In the first developer supply zone 24b, the LCD substrate G is stopped at a predetermined position (step 2), and the development nozzles 51a and 51b are scanned at a high speed of 240 mm / second, for example, while the LCD substrate G is scanned. The developer is discharged onto the surface, and the developer is deposited (step 3). When the LCD substrate G is stopped, the drive control of the developing nozzles 51a and 51b is facilitated. Further, the developer can be stably deposited on the LCD substrate.

  FIG. 11 is an explanatory view showing a scanning mode of the developing nozzles 51a and 51b. It is assumed that the developing nozzles 51a and 51b are scanned from the right side to the left side in FIG. 11, and the right end of the LCD substrate G shown in FIG. After the height positions of the developing nozzles 51a and 51b are adjusted by the lifting device 57, the driving mechanism 46 is operated to start scanning the developing nozzles 51a and 51b. When the main developer discharge nozzle 51a reaches a predetermined position on the right side from the liquid build start end, for example, a position 1 cm to the right of the liquid build start end (hereinafter referred to as “discharge start position”), the main developer discharge nozzle 51a Is started to be discharged (step 3a). As a result, the developer can be surely accumulated from the liquid accumulation start end. Similarly, when the sub developer discharge nozzle 51b reaches the discharge start position, discharge of the developer from the sub developer discharge nozzle 51b is started (step 3b).

  Then, the developing nozzles 51a and 51b are scanned on the LCD substrate G to deposit the developer on the entire LCD substrate G (step 3c). At this time, as described above with reference to FIGS. 9A and 9B, when the developing nozzles 51a and 51b are scanning the LCD substrate G, the developer is obliquely applied to the developing nozzles 51a and 51b. It is discharged toward the lower rear. The sub developer discharge nozzle 51b applies the developer to the LCD substrate G without scraping the developer applied on the LCD substrate G by the main developer discharge nozzle 51a in the scanning direction of the development nozzles 51a and 51b. .

  The discharge of the developer onto the LCD substrate G may be continued until the sub-developer discharge nozzle 51b passes the liquid piling end. Preferably, however, the main development is performed when the main developer discharge nozzle 51a reaches the liquid piling end. Discharge of the developer from the liquid discharge nozzle 51a is stopped (step 3d), and when the sub developer discharge nozzle 51a reaches the end of liquid buildup, discharge of the developer from the sub developer discharge nozzle 51b is stopped (step). 3e) The developing nozzles 51a and 51b are moved so that the lower end of the sub-developing liquid discharge nozzle 51b approaches or comes into contact with the liquid pile end of the LCD substrate G (step 3f). By moving the sub developer discharge nozzle 51b to such a position, it is possible to prevent the developer applied on the LCD substrate G from spilling from the liquid piling end. When the sub developer discharge nozzle 51b is brought into contact with the LCD substrate G, fine control is performed so that the LCD substrate G is not damaged by the contact.

  It is also preferable that after the liquid filling operation shown in FIG. 11 is completed, the developing nozzles 51a and 51b are returned to the liquid piling start end side and the developer is applied again to the LCD substrate G (step 3g). By performing liquid deposition on the LCD substrate G a plurality of times, it is possible to shorten the development time while maintaining high development accuracy.

  FIG. 12 is an explanatory view showing the relationship between the condition of the liquid on the LCD substrate G and the obtained development pattern characteristics. FIG. 12A shows the relationship between the scanning speed of the developing nozzles 51a and 51b and the line width uniformity. FIG. 12B shows the relationship between the number of liquid deposits and the line width, and FIG. 12C shows the relationship between the number of liquid deposits and the line width uniformity.

  The results shown in FIGS. 12A to 12C show that the LCD substrate G is exposed under a predetermined condition using a mask on which a predetermined pattern having a line width of 8 μm or 10 μm is formed, and then the exposed LCD substrate G is processed. Development was performed under various conditions, and the resist film pattern thus obtained was observed by SEM and the line width (the width of the convex portion in the development pattern) was measured. In this SEM observation, in order to observe the entire LCD substrate G, a plurality of observation points were provided radially in eight directions intersecting at an equal angle at the approximate center of the LCD substrate G.

  The result shown in FIG. 12A is that a mask having a pattern with a line width of 10 μm is used, and the discharge flow rate of the developer from the developing nozzles 51a and 51b is constant regardless of the scanning speed of the developing nozzles 51a and 51b. It is obtained by changing the scanning speed of the developing nozzles 51a and 51b only once, and further developing time (time from starting application of the developing solution until removing the developing solution from the LCD substrate G) is constant. It is a thing. Note that one bar graph in FIG. 12A corresponds to one LCD substrate G.

  As shown in FIG. 12 (a), when the number of liquid deposits of the developing nozzles 51a and 51b is one, it is understood that the higher the scanning speed of the developing nozzles 51a and 51b, the more the line width uniformity improves. It was. This is because the retention amount of the developer at the start end of the developer is reduced, and a partial excessive reaction of the development that occurs at the start end is suppressed, and the time that the liquid is accumulated on the entire LCD substrate G is reduced. This is probably because the development reaction progressed uniformly over the entire LCD substrate G because of its short length.

  “Partial excessive reaction of development occurring at the starting end of developer accumulation” refers to the following. That is, the developing solution is supplied in the scanning direction as the developing nozzles 51a and 51b scan, and at this time, a part of the developing solution flows in the direction opposite to the scanning direction. The return developer cannot flow any more at the developer accumulation start end, and accumulates on the spot. For this reason, the developing solution is excessively supplied at the starting end portion of the developing solution, and the developing reaction proceeds from the other part, and the excessive reaction proceeds. This partial over-reaction of development results in increased in-plane line width variation.

  Since the amount of the return developer can be reduced by increasing the scanning speed of the developing nozzles 51a and 51b, a partial excess reaction at the starting end of the developer is suppressed.

  Since the discharge flow rate of the developer from the developing nozzles 51a and 51b and the developing time were fixed, the average line width was 9.94 μm and close to the mask pattern when the scanning speed was 100 mm / second. The variation in line width in the entire substrate G became large. On the other hand, when the scanning speed was 210 mm / second, the average line width was 9.78 μm, which was slightly narrower than the mask pattern, but the variation in the line width across the entire LCD substrate G was small. As a result, when the scanning speed of the developing nozzles 51a and 51b is high, the impact of the developer on the resist increases, and the development reaction is further promoted. Therefore, the development reaction occurs when the scan speed is 210 mm / sec. One of the causes is considered to be too much progress. Therefore, when the developing nozzles 51a and 51b are scanned at high speed, it is considered that the average line width can be brought close to the mask pattern by shortening the developing time, and the line width uniformity can be improved. .

  The result shown in FIG. 12B shows that a mask having a pattern with a line width of 8 μm is used, the scanning speed of the developing nozzles 51a and 51b is 80 mm / second, and the developer discharge amount is 5.6 L (liter) / minute. The average line width when the number of times of liquid pour is changed with the development time constant for the case where the scan speed of the development nozzles 51a and 51b is 160 mm / second and the discharge amount of the developer is 9.4 L / min. Show. As shown in FIG. 12B, the average line width decreases as the number of liquids increases. This indicates that as the number of times of liquid buildup increases, the development reaction proceeds faster. Therefore, it is considered that the development time can be shortened by increasing the number of times of liquid buildup.

  The result shown in FIG. 12C is that a mask having a pattern with a line width of 8 μm is used, the scanning speed of the developing nozzles 51a and 51b is 80 mm / second, and the developer discharge amount is 5.6 L (liter) / minute. And when the developing nozzles 51a and 51b have a scanning speed of 160 mm / second and a developer discharge amount of 9.4 L / min, the developing time is constant and the line width uniformity when the number of liquids is changed Is shown. Note that one bar graph in FIG. 12C corresponds to one LCD substrate G.

  As shown in FIG. 12C, when the number of liquids is the same, the line width uniformity tends to improve as the scanning speed of the developing nozzles 51a and 51b increases. In addition, when the scanning speed of the developing nozzles 51a and 51b is high (160 mm / sec), the line width uniformity is improved as the number of liquids is increased. From these results, it can be seen that increasing the scanning speed of the developing nozzles 51a and 51b and increasing the number of liquid deposits are effective in improving the line width uniformity.

  The LCD substrate G that has been subjected to the liquid buildup process in the first developer supply zone 24b is transported to the second developer supply zone 24c at a transport speed of 46 mm / second, for example, by operating the roller transport mechanism 14. (Step 4). When the LCD substrate G passes through the second developer supply zone 24c, the developer may be replenished onto the LCD substrate G from the developer replenishment nozzle 51c (step 5).

  The LCD substrate G transported to the second developer supply zone 24c is further transported to the developer removal zone 24d (step 6), where the LCD substrate G is converted into an oblique posture and the developer on the LCD substrate G is allowed to flow. Then, the rinse liquid, for example, pure water is discharged from the rinse liquid discharge nozzle 52 onto the surface of the LCD substrate G in a state where the LCD substrate G is held in an oblique posture, and the developer on the LCD substrate G is washed away (Step 7). Step 8).

  Subsequently, the LCD substrate G is transported to the rinse zone 24e (step 9), where the rinsing liquid is discharged onto the front and back surfaces of the LCD substrate G while being transported at a predetermined speed, and adheres to the LCD substrate G. The developing solution is removed and washed (step 10). The LCD substrate G that has passed through the rinsing zone 24e while being subjected to such rinsing processing is transported to the drying zone 24f (step 11). In the drying zone 24f, the drying process by the air nozzle 54 is performed while the LCD substrate G is transported at a predetermined speed (step 12). The LCD substrate G that has been dried is transported to the i-line UV irradiation unit (i-UV) 25 by the roller transport mechanism 14 (step 13), where a predetermined ultraviolet irradiation process is performed.

  As mentioned above, although embodiment of this invention has been described, this invention is not limited to the said embodiment. For example, the number of developer discharge nozzles arranged in the first developer supply zone 24b may be one, or three or more. When a single developer discharge nozzle is used, the flow rate of the developer discharged from the developer discharge nozzle has to be increased. Therefore, the developer discharge momentum is increased and the developer discharged onto the LCD substrate G is discharged. The developer discharge state from the developer discharge nozzle, for example, the discharge direction and discharge momentum of the developer is controlled so as not to spill from the LCD substrate G.

  Further, in the first developer supply zone 24b, the developer is applied to the LCD substrate G while the developer applied on the LCD substrate G is transported at a speed that does not spill out without stopping the LCD substrate G. It may be applied. Further, the scanning direction of the developing nozzles 51a and 51b is opposite to the transporting direction of the LCD substrate G. However, when the LCD substrate G is stopped, the developing nozzles 51a and 51b are perpendicular to the transporting direction of the LCD substrate G. 51b may be scanned.

  According to the present invention, the processing liquid can be applied on the substrate in a short time by moving the processing liquid discharge nozzle at a predetermined speed. This makes it possible to perform uniform liquid processing on the entire substrate. In addition, since it is not necessary to transport the substrate coated with the processing solution at high speed, it is not necessary to stop the substrate suddenly. As a result, the processing solution spills from the substrate and the development reaction does not proceed. There is no problem that the substrate is distorted or the substrate is overrun and damaged. Furthermore, since the space required for transporting the substrate may be the same as the conventional one, an increase in the footprint of the apparatus is suppressed.

1 is a schematic plan view of a resist coating / development processing system including a development processing unit that is an embodiment of a liquid processing apparatus of the present invention. FIG. 2 is a side view showing a first thermal processing unit section of the resist coating / development processing system shown in FIG. 1. The side view which shows the 2nd thermal processing unit section of the resist application | coating / development processing system shown in FIG. The side view which shows the 3rd thermal processing unit section of the resist application | coating / development processing system shown in FIG. 1 is a schematic side view of a development processing unit according to the present invention. FIG. 6 is a schematic plan view of the development processing unit shown in FIG. 5. The front view which looked at the structure of the 1st developing solution supply zone which the development processing unit shown in FIG. 5 has seen from the upstream of the conveyance direction of an LCD substrate. FIG. 6 is a perspective view showing a structure of a main developer discharge nozzle arranged in a first developer supply zone of the development processing unit shown in FIG. 5. The side view which shows the arrangement | positioning form of the main developing solution discharge nozzle shown in FIG. Explanatory drawing (flowchart) which shows the outline of a development processing process. FIG. 5 is an explanatory diagram illustrating a scan form of a main developer discharge nozzle and a sub developer discharge nozzle. Explanatory drawing which shows the relationship between the liquid piling condition to a LCD substrate, and the line width and line width uniformity of the development pattern obtained.

Explanation of symbols

1; cassette station 2; processing station 3; interface station 14; roller transport mechanism 17; roller 24; development processing unit (DEV)
24a; introduction zone 24b; first developer supply zone 24c; second developer supply zone 24d; developer removal zone 24e; rinse zone 24f; drying zone 51a; main developer discharge nozzle 51b; 51c; Developer replenishment nozzle 52; Rinsing liquid discharge nozzle 53; Rinsing nozzle 54; Air nozzle (air knife)
55; Nozzle fixing member 56; Nozzle holding member 57; Elevating device 58; Arched arm 59a; Guide rail 60; Developer supply mechanism 60a; Nozzle moving mechanism 100; Resist application / development processing system (processing device)
G …… LCD substrate

Claims (4)

A liquid processing apparatus that performs development processing on a substrate subjected to exposure processing,
An introduction zone for introducing the substrate;
A developer supply zone for supplying a developer to the substrate;
A developer removal zone for removing the developer from the substrate;
A transport mechanism that transports the substrate in a substantially horizontal posture from the introduction zone to the developer removal zone via the developer supply zone;
A developer supply mechanism that discharges the developer from a developer discharge nozzle and supplies the developer onto the substrate in the developer supply zone;
The developer supply mechanism is configured to supply the developer onto the substrate while horizontally moving the developer discharge nozzle on the substrate;
The transport mechanism is configured to stop transport of the substrate in the developer supply zone, or to lower the transport speed of the substrate than the substrate transport speed to the developer supply zone. Liquid processing equipment.   The developer is discharged from a fixed developer replenishing nozzle while the substrate supplied with the developer is conveyed at a predetermined speed between the developer supply mechanism and the developer removal zone. The liquid processing apparatus according to claim 1, further comprising a developer replenishment mechanism that replenishes the developer onto the substrate supplied with the developer. A liquid processing method for performing development processing on a substrate subjected to exposure processing,
Transporting the substrate in a substantially horizontal posture from an introduction zone for introducing the substrate to a developer supply zone for supplying developer to the substrate;
Stopping the transport of the substrate in the developer supply zone, or making the transport speed of the substrate slower than the substrate transport speed to the developer supply zone;
Supplying the developer onto the substrate by discharging the developer from the developer discharge nozzle while horizontally moving the developer discharge nozzle on the substrate in the developer supply zone;

Transporting the substrate supplied with the developer to a developer removal zone for removing the developer from the substrate;
A liquid treatment method comprising:   The substrate supplied with the developer is conveyed at a predetermined speed between the step of supplying the developer onto the substrate and the step of conveying the substrate supplied with the developer to the developer removal zone. 4. The liquid according to claim 3, further comprising a step of discharging the developer from a fixed developer replenishing nozzle and replenishing the developer onto the substrate supplied with the developer. Processing method.

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