JP2004319625A - Method and apparatus for developing treatment - Google Patents

Method and apparatus for developing treatment Download PDF

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Publication number
JP2004319625A
JP2004319625A JP2003109073A JP2003109073A JP2004319625A JP 2004319625 A JP2004319625 A JP 2004319625A JP 2003109073 A JP2003109073 A JP 2003109073A JP 2003109073 A JP2003109073 A JP 2003109073A JP 2004319625 A JP2004319625 A JP 2004319625A
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developing
nozzle
developer
gap
liquid film
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JP4183121B2 (en
Inventor
Shuichi Nishikido
修一 錦戸
Tetsuya Kitamura
哲也 北村
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to PCT/JP2004/002884 priority patent/WO2004093170A1/en
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  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
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Abstract

<P>PROBLEM TO BE SOLVED: To make the pattern dimension of a line width uniform, and to reduce the amount of the consumption of a developing solution. <P>SOLUTION: A wafer W and a liquid film forming planar plate 20 are made opposite to each other in parallel with a predetermined gap 30 (liquid film forming region), and a developing solution is supplied into the gap from a plurality of small holes 41 while moving a tubular nozzle 40 having the small holes 41 at least formed along an axial direction from one end side of the gap 30 to the other side thereof, thereby filling the developing solution D in the gap 30 to form a liquid film of the developing solution D on the surface of the wafer W to perform developing treatment. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

【0001】
【発明の属する技術分野】
この発明は、例えば半導体ウエハやFPD(フラットパネルディスプレイ)用ガラス基板やフォトマスク基板(レチクル)等の基板に現像液を供給して基板表面を現像処理する現像処理方法及び現像処理装置に関するものである。
【0002】
【従来の技術】
一般に、半導体デバイスの製造工程においては、半導体ウエハやFPD用ガラス基板等(以下にウエハ等という)の表面に例えばレジスト液を塗布し、ステッパー等の露光装置を用いて回路パターンを縮小してレジスト膜を露光し、露光後のウエハ表面に現像液を塗布(供給)して現像処理を行うフォトリソグラフィー技術が用いられている。
【0003】
上記現像処理工程においては、一般にウエハ等の表面のレジストに現像液を噴霧するスプレー方式やウエハ等の表面に現像液を盛るパドル方式等が知られている。また、別の方式として、現像すべき一対のウエハ等を所定の隙間をあけて互いに対向させ、毛管現象を利用して隙間内を現像液で満たして、ウエハ等の表面に現像液の液膜を形成する方法も知られている(例えば、特許文献1参照)。
【0004】
【特許文献1】
特開平6−244097号公報(特許請求の範囲、段落番号0011、図3)
【0005】
【発明が解決しようとする課題】
しかしながら、スプレー方式では、現像液の消費量が多い上、現像液をウエハ等の表面に均一に噴霧(供給)することが難しいため、線幅等のパターン寸法が不均一になるという問題があった。
【0006】
パドル方式では、スプレー現像のような問題は生じないが、現像液の液膜表面が開放された自由表面となっているため、液面に波立ちが生じ、それに伴って現像液のレジスト接触面(反応面)も移動してしまい、線幅等のパターン寸法が不均一になるという問題があった。また、パドル方式においても、現像液をウエハ等の表面に満遍なく均一に液盛りするのが難しいという問題もある。
【0007】
これに対して、特開平6−244097号公報に記載の現像方式においては、スプレー方式やパドル方式に比べて、現像液の消費量を少なくすることができるが、この現像方式においても、ウエハ等の表面に供給される現像液が流動するため、線幅等のパターン寸法が不均一になるという問題があった。
【0008】
この発明は上記事情に鑑みてなされたもので、線幅等のパターン寸法の均一を図ると共に、現像液の消費量の低減を図れるようにした現像処理方法及び現像処理装置を提供することを目的とするものである。
【0009】
【課題を解決するための手段】
上記目的を達成するために、この発明の現像処理方法は、被処理基板と液膜形成用平板とを互いに平行に所定の隙間をあけて対向させ、少なくとも軸方向に沿う複数の小孔を有する管状の現像液供給ノズルを、上記隙間の一側端から他側端に向かって移動しつつ小孔から隙間内に現像液を供給することにより、上記隙間内に現像液を充満させて上記被処理基板の表面に現像液の液膜を形成することを特徴とする(請求項1)。
【0010】
この発明の現像処理方法において、上記現像液供給ノズルは、少なくとも軸方向に沿う複数の小孔を有する管状のものであれば、その形態は任意でよく、例えば、管状部材の軸方向に沿う一列又は複数列に複数の小孔を適宜間隔をおいて穿設したものでもよい。この場合、現像液供給ノズルへの現像液の供給を管状部材の一端側であっても差し支えないが、両端側から供給する方が好ましい。このように管状部材の両端側から現像液を供給する場合は、小孔が等間隔に穿設されるときは端部側から中心側に向かって小孔の開口面積を漸次増大させるようにする方が好ましい。また、小孔の開口面積を同一にした場合は端部側から中心側に向かって間隔を漸次小さくする方がよい。また、現像液供給ノズルを全周に多数の小孔を有する多孔質の管状部材にて形成することも可能である。
【0011】
また、この発明の現像処理方法において、上記現像液供給ノズルの複数個を間隔をおいて隙間内に移動させつつ各現像液供給ノズルの小孔から現像液を供給するようにしてもよい(請求項2)。
【0012】
また、上記現像液供給ノズルにおける移動方向の後方側に突設された翼片により、供給された現像液の乱流を抑制するようにしてもよい(請求項3)。翼片の形状は任意でよいが、先端に向かって狭小テーパ状の形状にする方が好ましい。なお、翼片を突設した現像液供給ノズルを2個用いることも可能である。この場合、上記翼片を突設する現像液供給ノズルを移動方向と交差する方向に間隔をおいて2個並設して、隙間内を移動させつつ各現像液供給ノズルの小孔から現像液を供給する方がよい(請求項4)。
【0013】
また、上記現像液供給ノズルを移動しつつノズルの周方向に回転させるようにしてもよい(請求項5)。この場合、ノズルの回転方向は任意であっても差し支えないが、好ましくは被処理基板側に向かって回転させる方がよい。
【0014】
また、上記液膜形成用平板に被処理基板を用いてもよい(請求項6)。
【0015】
また、この発明の現像処理装置は、請求項1記載の現像処理方法を具現化するもので、被処理基板を載置する載置台と、 上記載置台の上方に対向して配設され、載置台に載置された被処理基板との間に所定の隙間を形成する液膜形成用平板と、 少なくとも軸方向に沿う複数の小孔を有する管状の現像液供給ノズルと、 上記現像液供給ノズルを、上記隙間の一側端から他側端に向かって移動するノズル移動手段と、を具備することを特徴とする(請求項7)。
【0016】
この発明の現像処理装置において、上記現像液供給ノズルは、上述したように、少なくとも軸方向に沿う複数の小孔を有する管状のものであれば、その形態は任意でよく、例えば、管状部材の軸方向に沿う一列又は複数列に複数の小孔を適宜間隔をおいて穿設したものでもよい。この場合、現像液供給ノズルへの現像液の供給を管状部材の一端側であっても差し支えないが、両端側から供給する方が好ましい。このように管状部材の両端側から現像液を供給する場合は、小孔が等間隔に穿設されるときは端部側から中心側に向かって小孔の開口面積を漸次増大させるようにする方が好ましい。また、小孔の開口面積を同一にした場合は端部側から中心側に向かって間隔を漸次小さくする方がよい。また、現像液供給ノズルを全周に多数の小孔を有する多孔質の管状部材にて形成することも可能である。
【0017】
また、この発明の現像処理装置において、上記現像液供給ノズルを、互いに間隔をおいて隙間内を移動する複数個のノズルにて形成してもよい(請求項8)。
【0018】
また、現像液供給ノズルに、該ノズルの移動方向の後方側に突出する翼片を設けてもよい(請求項9)。この場合、翼片の形状は任意でよいが、好ましくは先端に向かって狭小テーパ状の形状とする方がよい。なお、翼片を突設した現像液供給ノズルを2個用いることも可能である。この場合、上記翼片を突設する現像液供給ノズルを移動方向と交差する方向に間隔をおいて2個並設して、隙間内を移動させつつ各現像液供給ノズルの小孔から現像液を供給する方がよい(請求項10)。
【0019】
また、上記現像液供給ノズルを、移動及び同方向に回転可能に形成してもよい(請求項11)。この場合、ノズルの回転方向は任意であっても差し支えないが、好ましくは被処理基板側に向かって回転させる方がよい。
【0020】
また、上記液膜形成用平板に代えて被処理基板を用いてもよい(請求項12)。
【0021】
請求項1,7記載の発明によれば、被処理基板と液膜形成用平板とを互いに平行に所定の隙間をあけて対向させることにより、被処理基板の表面に供給される現像液の液膜の形成領域を確保することができる。そして、少なくとも軸方向に沿う複数の小孔を有する管状の現像液供給ノズルを、隙間(液膜形成領域)の一側端から他側端に向かって移動しつつ小孔から隙間内に現像液を供給することにより、現像中の現像液の動きを現像開始から終了まで、極めて静的に保って隙間内に現像液を充満させた状態で被処理基板の表面に現像液の液膜を形成して現像処理することができる。したがって、面内を均一にして線幅等のパターン寸法を均一にすることができる。また、レジストの疎水度に影響を受けずに均一に現像液の液膜を形成することができるので、これからも線幅等のパターン寸法の均一性の向上が図れる。更に、現像液は所定の間隔に設定された薄い隙間(液膜形成領域)の分の液量で済むため、現像液の少量化を図ることができる。
【0022】
請求項2,8記載の発明によれば、現像液供給ノズルの複数個を間隔をおいて隙間内に移動させつつ各現像液供給ノズルの小孔から現像液を供給することにより、各ノズルの小孔からできる限りゆっくり現像液を供給(吐出)しながら複数のノズルを移動することができるので、現像中の現像液の動きを更に静的に保って線幅等のパターンの均一性の向上を図ることができる。また、複数のノズルを同時に移動させるので、現像処理速度の迅速化を図ることができる。
【0023】
請求項3,9記載の発明によれば、現像液供給ノズルにおける移動方向の後方側に突設された翼片により、供給された現像液の乱流を抑制することにより、現像中の現像液の動きを更に静的に保つことができるので、更に線幅等のパターンの均一性の向上を図ることができる。
【0024】
請求項4,10記載の発明によれば、翼片を突設する現像液供給ノズルを移動方向と交差する方向に間隔をおいて2個並設して、隙間内を移動させつつ各現像液供給ノズルの小孔から現像液を供給することにより、両ノズル間に設けられた間隔から空気を逃がして、被処理基板側及び液膜形成用平板側の両側における現像液の動きを均等にバランスすることができるので、更に線幅等のパターンの均一性の向上を図ることができる。
【0025】
請求項5,11記載の発明によれば、現像液供給ノズルを移動しつつノズルの周方向に回転させることにより、現像液供給ノズルが通過する影響、すなわちノズルが通過した直後の現像液の空洞部による影響を抑制することができるので、請求項1,2記載の発明に加えて更に線幅等のパターンの均一性の向上を図ることができる。
【0026】
請求項6,12記載の発明によれば、液膜形成用平板に被処理基板を用いることにより、一工程で2枚の被処理基板の現像処理を同時に行うことができるので、請求項1〜5記載の発明に加えて更に処理効率の向上を図ることができる。
【0027】
【発明の実施の形態】
以下に、この発明の実施の形態を図面に基づいて詳細に説明する。この実施形態では、この発明に係る現像処理装置を半導体ウエハ(以下にウエハという)の現像処理に適用した場合について説明する。
【0028】
◎第一実施形態
図1は、この発明に係る現像処理装置の一例を示す概略平面図、図2は、現像処理装置の概略側面図、図3は、この発明における載置台の別の形態を示す概略平面図(a)及び概略側面図(b)、図4は、この発明の現像処理方法の第一実施形態の現像処理を示す要部拡大断面図、図5は、第一実施形態における現像液供給ノズルの一例を示す要部断面図である。
【0029】
上記現像処理装置は、被処理基板であるウエハWを載置し、図3に示すバキューム装置VによってウエハWを吸着保持する載置台10と、この載置台10の上方に配設される液膜形成用平板20とを具備している。載置台10は、水平がとれれば任意の大きさでよい。例えば、ウエハWと略同じ大きさであってもよく、接触面積を小さくするためにウエハWよりも小さくしてもよい。あるいは、図3に示すように、放射状の三方向に載置部10bが延在する形状であってもよい。なお、図3において、符号10aは吸引穴である。この場合、載置台10に載置されたウエハWと、液膜形成用平板20とは互いに平行に所定の隙間30をあけて対向して配設されており、この隙間30によって現像液の液膜形成領域が形成される。なお、隙間30(液膜形成領域)の寸法は現像液の種類や形成される液膜の膜厚等によって異なるが、約2〜5mm程度に設定される。この間隔は、後述する現像ノズル40が通過できる寸法であればよい。
【0030】
また、載置台10には、図示しないウエハ搬送アームとの間でウエハWの受け渡しを行う3本の支持ピン11が昇降可能に設けられている。これら支持ピン11は、図1及び図2に示すように、載置台10に設けられた貫通孔(図示せず)を摺動可能に貫挿するか、又は、図3に示すように、載置台10の横に設けられている。また、支持ピン11は、載置台10の下方に突出する下端部同士が支持部材12に立設され、支持部材12に連結する昇降手段例えば昇降シリンダ13によって各支持ピン11が載置台10の載置面に出没し得るように形成されている。また、液膜形成用平板20は、例えばボールねじにて構成される昇降機構21に連結されており、この昇降機構21の駆動によって載置台10に対して進退移動可能に形成されて、隙間30の間隔が調整される。この場合、昇降機構21と液膜形成用平板20とを回転可能に連結してもよい。
【0031】
また、現像処理装置は、少なくとも軸方向に沿う複数の小孔41を有する管状の現像液供給ノズル40(以下に現像ノズル40という)を具備している。この現像ノズル40は、載置台10を挟んで両側に配設された一対のガイドレール50に移動自在に架設されると共に、ノズル移動手段である移動・昇降機構60(移動・昇降手段)に連結されて、鉛直方向に昇降移動可能に形成されると共に、上記隙間30(液膜形成領域)の一側端から他側端に向かって移動すべく水平方向に移動可能に形成されている。
【0032】
この場合、現像ノズル40は、図4に示すように、例えば外径約1〜4mm、内径約0.5〜3.5mmの例えばステンレスやエポキシ樹脂製の管状部材42の軸方向に沿って等間隔に穿設される複数の小孔41を具備しており、管状部材42の中空部42aの両端部に供給管路43を介して現像液供給源である現像液貯留タンク44が接続されている。この供給管路43の一部は、現像ノズル40の移動範囲を許容できる長さのチューブにて形成されている。また、供給管路43には現像液の流量調整可能な開閉手段例えばエアオペレーションバルブ45と圧送手段例えばポンプ46が介設されている。なお、小孔41は、管状部材42の端部側から中心側に向かって小孔41の開口面積が漸次増大されている。このように小孔41の開口面積を、管状部材42の端部側から中心側に向かって漸次増大させることにより、両端側から管状部材42の中空部42a内に供給される現像液を各小孔41から均等に吐出(供給)することができる。なお、小孔41の開口径や間隔は、ウエハWのサイズや現像液の種類等によって適宜設定される。
【0033】
ここでは、複数の小孔41を等間隔に設けて、小孔41の開口面積を、管状部材42の端部側から中心側に向かって漸次増大させる場合について説明したが、各小孔41の開口面積を同一にして、管状部材42の端部側から中心側に向かって間隔を漸次小さくするようにしてもよい。また、小孔41を管状部材42の複数列、例えば図7に示すように、管状部材42の下端側と上端側の2列に同様に設けてもよく、あるいは、任意の複数列に同様に設けてもよい。また、図8に示すように、全周に多数の小孔41を有する多孔質の管状部材42Aにて現像ノズル40Aを形成してもよい。このように、現像ノズル40Aを全周に多数の小孔41を有する多孔質の管状部材42Aにて形成することにより、現像ノズル40の全周から現像液を均一に吐出(供給)することができる。なお、これらの場合、ポンプ46によって現像液の圧力を調整するようにしてもよい。
【0034】
なお、上記ガイドレール50には、現像ノズル40の他に、それぞれ現像ノズル40と同様に管状に形成される、第1のリンスノズル71と、現像液吸引ノズル73と、第2のリンスノズル72及び乾燥ノズル74が、昇降及び摺動可能に装着されている。この場合、第1及び第2のリンスノズル71,72は、現像ノズル40と同様に、管状部材の軸方向に沿う複数のノズル孔(図示せず)が設けられている。また、現像液吸引ノズル73及び乾燥ノズル74は、それぞれ管状部材の軸方向に沿うスリット状の吸引孔や乾燥気体例えば空気の噴射孔(図示せず)が設けられている。これら第1のリンスノズル71、現像液吸引ノズル73、第2のリンスノズル72及び乾燥ノズル74も、上記移動・昇降機構60に連結されて、鉛直方向に昇降移動可能に形成されると共に、上記隙間30の一側端から他側端に向かって移動すべく水平方向に移動可能に形成されている。なお、上記ノズル40,71〜74の待機位置(ホームポジション)には、ノズル洗浄バス75が配設されている。なお、上記リンスノズル71,72、現像液吸引ノズル73、乾燥ノズル74は、それぞれ径は異なってもよく、また、それぞれの使用時の隙間30も異なっていてもよい。
【0035】
次に、この発明の現像処理方法について、図4及び図6を参照して説明する。まず、図示しないウエハ搬送アームがウエハWを保持して現像装置内に進入すると、支持ピン11が上昇してウエハWを受け取る。ウエハWを受け渡したウエハ搬送アームは現像装置内から後退する。ウエハWを受け取った支持ピン11が下降してウエハWが載置台10に載置されると、バキューム装置Vの駆動によってウエハWが吸着保持される。その後、昇降機構21によって液膜形成用平板20を鉛直方向に移動(昇降)して、載置台10に載置されるウエハWの表面に形成(液盛り)される現像液の膜厚に対応した間隔ととなるように調節して隙間30(液膜形成領域)を設定する。この状態で、図4及び図6(a),(b)に示すように、現像ノズル40を、隙間30(液膜形成領域)の一側端から他側端に向かって移動しつつ小孔41から隙間30(液膜形成領域)内に現像液Dを吐出(供給)すると、現像液Dが隙間30(液膜形成領域)内に充満されてウエハWの表面に現像液Dの液膜が形成される。この際、現像ノズル40の移動速度を、例えば50〜150mm/secとし、現像液の吐出量(供給量)を、例えば5〜50ml/secとする。
【0036】
これにより、現像中の現像液Dの動きを現像開始から終了まで、極めて静的に保って隙間30(液膜形成領域)内に現像液Dを充満させた状態でウエハWの表面に現像液Dの液膜を形成することができる。これにより、レジストRの疎水度に影響を受けずに現像液Dの液膜を均一に形成することができる。また、薄い隙間30(液膜形成領域)の分の現像液で済むため、現像液の消費量を低減することができる。
【0037】
なお、上記説明では、現像ノズル40の移動による現像処理の部分について説明したが、上記現像ノズル40を隙間30(液膜形成領域)の一端側から他端側に向かって移動した後、所定の時間をおいて第1のリンスノズル71を同様に移動しつつ図示しないリンス液供給源からリンス液例えば純水を吐出(供給)して現像液とレジストの溶解反応を停止させ、次いで、現像液吸引ノズル73を同様に移動させつつ図示しない吸引手段の吸引作用によって現像液と反応して生成された溶解生成物を吸引する。その後、第2のリンスノズル72を同様に移動しつつ図示しないリンス液供給源からリンス液例えば純水を吐出(供給)してリンス処理を行う。そして、最後に、乾燥ノズル74を同様に移動しつつ図示しない乾燥気体例えば清浄化された空気の供給源から乾燥気体を吹き付けてウエハWに付着するリンス液を吹き飛ばして乾燥する。なお、第2のリンスノズル72及び乾燥ノズル74をそれぞれ往復移動して、リンス処理及び乾燥処理を行うようにしてもよい。
【0038】
以上のようにして現像処理、リンス処理及び乾燥処理を行った後、現像ノズル40、第1のリンスノズル71、現像液吸引ノズル73、第2のリンスノズル72及び乾燥ノズル74はホームポジションに戻る。その後、載置台10の吸着状態を解除し、支持ピン11を上昇させて、現像装置内に進入するウエハ搬送アーム(図示せず)にウエハWを受け渡してウエハWを搬出する。以下、上記と同様の操作を繰り返してウエハWの現像処理を行う。
【0039】
◎第二実施形態
図9は、この発明の現像処理方法の第二実施形態の現像処理状態を示す要部拡大断面図である。
【0040】
第二実施形態は、上記現像ノズル40を複数例えば2個を、現像ノズル40の移動方向に間隔Lをおいて隙間30(液膜形成領域)内に移動させつつ各現像ノズル40の小孔41から現像液Dを供給させるようにした場合である。
【0041】
このように、複数例えば2個の現像ノズル40を移動方向に間隔Lをおいて隙間30(液膜形成領域)内に移動させつつ各現像ノズル40の小孔41から現像液Dを供給させることにより、第一実施形態のように1個現像ノズル40の小孔41から現像液を吐出(供給)する場合に比べて各現像ノズル40の小孔41からできる限りゆっくり現像液を吐出(供給)しながら2個の現像ノズル40を移動することができる。したがって、現像中の現像液Dの動きを更に静的に保って線幅等のパターンの均一性の向上を図ることができる。また、複数の現像ノズル40を同時に移動させるので、現像処理速度の迅速化を図ることができる。
【0042】
なお、第二実施形態において、現像ノズル40を多孔質の現像ノズル40Aに代えてもよい。また、第二実施形態において、その他の部分は第一実施形態と同じであるので、同一部分には同一符号を付して説明は省略する。
【0043】
◎第三実施形態
図10は、この発明の現像処理方法の第三実施形態の現像処理を示す要部拡大断面図(a)及び第三実施形態における現像ノズル40Bを示す斜視図(b)である。
【0044】
第三実施形態は、現像ノズル40Bにおける移動方向の後方側に翼片80を突設して、現像ノズル40Bの小孔41から吐出(供給)された現像液Dの乱流を抑制することにより、現像中の現像液の動きを更に静的に保つようにした場合である。この場合、翼片80は、現像ノズル40Bの管状部材42Bと一体に形成されており、先端(移動方向の後方側)に向かって狭小のテーパ面81が形成されている。
【0045】
上記のように形成される現像ノズル40Bを、第一実施形態と同様に、隙間30(液膜形成領域)の一端側から他端側に向かって移動して現像処理を行うと、先端(移動方向の後方側)に向かって狭小のテーパ面81を有する翼片80によって、現像液Dの乱流を整流化して抑制することができ、現像中の現像液Dの動きを更に静的に保つことができるので、更に線幅等のパターンの均一性の向上を図ることができる。
【0046】
なお、第三実施形態において、その他の部分は第一実施形態と同じであるので、同一部分には同一符号を付して説明は省略する。
【0047】
◎第四実施形態
図11は、この発明の現像処理方法の第四実施形態の現像処理を示す要部拡大断面図である。
【0048】
第四実施形態は、それぞれ翼片80Aを突設する現像ノズル40Cを移動方向と交差する方向に間隔L1をおいて2個並設して、隙間30(液膜形成領域)の一端側から他端側に向かって移動させつつ各現像ノズル40Cの小孔41から現像液を吐出(供給)して隙間30(液膜形成領域)内に現像液を充満させてウエハW表面に液膜を形成する場合である。第四実施形態おいて、各現像ノズル40Cの翼片80Aは、管状部材42Cと一体に形成され、管状部材42Cの下端又は上端から移動方向後方側に延在する水平面82と、管状部材42Cの上端又は下端と水平面82の先端とを連結する傾斜面83とを有する断面略三角形状に形成されている。
【0049】
このように、翼片80Aを突設する現像ノズル40Cを移動方向と交差する方向に間隔L1をおいて2個並設して、隙間30(液膜形成領域)の一端側から他端側に向かって移動させつつ各現像ノズル40Cの小孔41から現像液を吐出(供給)することにより、両現像ノズル40C間に設けられた間隔L1から空気Aを逃がして、ウエハW側及び液膜形成用平板20側の両側における現像液Dの動きを均等にバランスすることができる。したがって、更に線幅等のパターンの均一性の向上を図ることができる。
【0050】
なお、第四実施形態において、その他の部分は第一実施形態と同じであるので、同一部分には同一符号を付して説明は省略する。
【0051】
◎第五実施形態
図12は、この発明の現像処理方法の第五実施形態の現像処理を示す要部拡大断面図である。
【0052】
第五実施形態は、現像ノズル40Dを移動しつつ現像ノズル40Dの周方向に回転させるようにした場合である。この場合、現像ノズル40Dは、軸方向に沿う複数列例えば3列以上に複数の小孔41を設ける方が好ましい。また、現像ノズル40Dの回転方向をウエハW側に向かって行う方が好ましい。その理由は、現像ノズル40Dの回転に伴って小孔41から吐出(供給)される現像液をウエハWに積極的に供給することができるからである。このように、現像ノズル40を移動しつつ現像ノズル40Dの周方向に回転(ウエハW側に回転)させることにより、現像ノズル40Dの小孔41から吐出(供給)される現像液がウエハW表面に置かれるようにして液膜が形成される。また、現像ノズル40Dが通過する影響、すなわち現像ノズル40Dが通過した直後の現像液Dの空洞部による影響を抑制することができるので、更に線幅等のパターンの均一性の向上を図ることができる。
【0053】
なお、第五実施形態において、現像ノズル40Dに代えて多孔質の現像ノズルAを用いてもよい。また、第五実施形態において、その他の部分は第一実施形態と同じであるので、同一部分には同一符号を付して説明は省略する。
【0054】
◎第六実施形態
図13は、この発明の現像処理方法の第六実施形態を示す要部拡大断面図である。
【0055】
第六実施形態は、一工程で2枚のウエハWを同時に現像処理できるようにした場合である。すなわち、上記液膜形成用平板20に代えてウエハWを用いて、2枚のウエハWを互いに平行に対向させて隙間30(液膜形成領域)を形成し、この隙間30(液膜形成領域)の一端側から他端側に向かって現像ノズル例えば第四実施形態の現像ノズル40Cを移動しつつ現像液を小孔41から吐出(供給)して、隙間30(液膜形成領域)内に現像液Dを充満させて、両ウエハWの表面に液膜を形成するようにした場合である。
【0056】
したがって、第六実施形態によれば、一工程で2枚のウエハWの現像処理を同時に行うことができるので、更に処理効率の向上を図ることができる。この場合、翼片80Aを突設する現像ノズル40Cを移動方向と交差する方向に間隔L1をおいて2個並設して、隙間30(液膜形成領域)の一端側から他端側に向かって移動させつつ各現像ノズル40Cの小孔41から現像液を吐出(供給)することにより、両現像ノズル40C間に設けられた間隔L1から空気Aを逃がして、ウエハW側及び液膜形成用平板20側の両側における現像液Dの動きを均等にバランスすることができるので、更に線幅等のパターンの均一性の向上を図ることができる。
【0057】
なお、上記説明では、翼片80Aを突設する現像ノズル40Cを移動方向と交差する方向に間隔L1をおいて2個並設される場合について説明したが、その他の現像ノズル40,40A,40Bを用いてもよい。また、第六実施形態において、その他の部分は第一実施形態と同じであるので、同一部分には同一符号を付して説明は省略する。
【0058】
◎その他の実施形態
(1)上記実施形態では、載置台10が固定式で回転しない場合について説明したが、図3に二点鎖線で示すように、載置台10をモータMの回転軸に連結して、載置台10を水平方向に回転可能に形成し、現像ノズル40,40A,40B,40C,40Dの移動と同時に載置台10及びウエハWを水平方向に回転させるようにしてもよい。このように回転を利用する場合には、好ましくは、現像ノズル40,40A〜40Dを隙間30の一側端から他側端に向かって移動して現像液を吐出(供給)するときは、載置台10及びウエハWを回転させずに、それ以降の処理である洗浄処理、乾燥処理時には載置台10及びウエハWを回転させる方が好ましい。例えば図14に示すように、載置台10及びウエハWを回転させずに現像塗布工程を行った後に、液膜形成用平板20を移動させて、洗浄ノズル(リンスノズル)72Aが入る高さまで上昇させる(図14(a))。次に、液膜形成用平板20を下降してリンスノズル72Aが移動する隙間30を確保した後、リンスノズル72Aを隙間30の一側端から中心まで移動しつつリンス液例えは純水を吐出(供給)すると同時に、載置台10及びウエハWを回転する(図14(b),(c)参照)。その後、リンスノズル72Aからの純水の吐出(供給)を停止し、リンスノズル72Aがホームポジションに戻った後、又は、戻ると同時に、載置台10及びウエハWを高速回転して、ウエハWに付着する純水を振り切り、乾燥する(図14(d))。
【0059】
(2)上記実施形態では、被処理基板がウエハWである場合について説明したが、ウエハ以外の例えばFPD用ガラス基板やマスク基板(レチクル)等においても同様に現像処理できることは勿論である。なお、FPD用ガラス基板やマスク基板等のような角形の被処理板例えばマスク基板(レチクル)REの現像処理を行う場合は、図15に示すように、円形の液膜形成用平板20に代えて矩形状(方形状)の液膜形成用平板20Aを用い、また、矩形状(方形状)の載置台10Aを用いて処理を行う必要がある。また、液膜形成用平板20A,載置台10Aを用いることにより、被処理基板の形状に関係なく現像処理を行うことができる。
【0060】
【発明の効果】
以上に説明したように、この発明によれば、上記のように構成されているので、以下のような効果が得られる。
【0061】
1)請求項1,7記載の発明によれば、互いに平行に対向配置される被処理基板と液膜形成用平板とで形成された隙間(液膜形成領域)の一側端から他側端に向かって、軸方向に沿う複数の小孔を有する現像液供給ノズルを移動しつつ小孔から隙間内に現像液を供給することにより、現像中の現像液の動きを現像開始から終了まで、極めて静的に保って隙間内に現像液を充満させた状態で被処理基板の表面に現像液の液膜を形成して現像処理することができる。したがって、レジストの疎水度に影響を受けずに、面内を均一にして線幅等のパターン寸法の均一性の向上が図れる。また、現像液の使用量は、所定の間隔に設定された薄い隙間(液膜形成領域)の分の液量で済むため、現像液の少量化を図ることができる。
【0062】
2)請求項2,8記載の発明によれば、現像液供給ノズルの複数個を間隔をおいて隙間内に移動させつつ各現像液供給ノズルの小孔から現像液を供給することにより、各ノズルの小孔からできる限りゆっくり現像液を供給(吐出)しながら複数のノズルを移動することができるので、上記1)に加えて更に現像中の現像液の動きを更に静的に保って線幅等のパターンの均一性の向上を図ることができる。また、複数のノズルを同時に移動させるので、現像処理速度の迅速化を図ることができる。
【0063】
3)請求項3,9記載の発明によれば、現像液供給ノズルにおける移動方向の後方側に突設された翼片により、供給された現像液の乱流を抑制することにより、現像中の現像液の動きを更に静的に保つことができるので、上記1)に加えて更に線幅等のパターンの均一性の向上を図ることができる。
【0064】
4)請求項4,10記載の発明によれば、翼片を突設する現像液供給ノズルを移動方向と交差する方向に間隔をおいて2個並設して、隙間内を移動させつつ各現像液供給ノズルの小孔から現像液を供給することにより、両ノズル間に設けられた間隔から空気を逃がして、被処理基板側及び液膜形成用平板側の両側における現像液の動きを均等にバランスすることができるので、上記1)、3)に加えて更に線幅等のパターンの均一性の向上を図ることができる。
【0065】
5)請求項5,11記載の発明によれば、現像液供給ノズルを移動しつつノズルの周方向に回転させることにより、現像液供給ノズルが通過する影響、すなわちノズルが通過した直後の現像液の空洞部による影響を抑制することができるので、上記1)に加えて更に線幅等のパターンの均一性の向上を図ることができる。
【0066】
6)請求項6,12記載の発明によれば、液膜形成用平板に被処理基板を用いることにより、一工程で2枚の被処理基板の現像処理を同時に行うことができるので、更に処理効率の向上を図ることができる。
【図面の簡単な説明】
【図1】この発明に係る現像処理装置の一例を示す概略平面図である。
【図2】上記現像処理装置の概略側面図である。
【図3】この発明における載置台の別の形態を示す概略平面図(a)及び概略側面図(b)である。
【図4】この発明の現像処理方法の第一実施形態の現像処理を示す要部拡大断面図である。
【図5】第一実施形態の現像ノズルを示す概略断面図である。
【図6】第一実施形態の現像処理を示す概略斜視図である。
【図7】第一実施形態の現像ノズルの別の形態の現像処理を示す要部拡大断面図である。
【図8】第一実施形態の現像ノズルの別の形態の現像処理を示す要部拡大断面図(a)及びその現像ノズルの斜視図(b)である。
【図9】この発明の現像処理方法の第二実施形態の現像処理を示す要部拡大断面図である。
【図10】この発明の現像処理方法の第三実施形態の現像処理を示す要部拡大断面図(a)及びその現像ノズルの斜視図(b)である。
【図11】この発明の現像処理方法の第四実施形態の現像処理を示す要部拡大断面図である。
【図12】この発明の現像処理方法の第五実施形態の現像処理を示す要部拡大断面図である。
【図13】この発明の現像処理方法の第六実施形態の現像処理を示す要部拡大断面図である。
【図14】この発明の現像処理方法の第七実施形態の一例と、洗浄及び乾燥処理を示す説明図である。
【図15】この発明における載置台及び液膜形成用平板の別の形態を示す概略平面図(a)及び概略側面図(b)である。
【符号の説明】
10,10A 載置台
20,20A 液膜形成用平板
30 隙間(液膜形成領域)
40,40A〜40D 現像ノズル(現像液供給ノズル)
41 小孔
60 移動・昇降機構(移動・昇降手段、ノズル移動手段)
80,80A 翼片
W 半導体ウエハ(被処理基板)
D 現像液
L 現像ノズル40の間隔
L1 現像ノズル40Cの間隔
RE レチクル(被処理基板)
[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a developing method and a developing apparatus for developing a surface of a substrate by supplying a developing solution to a substrate such as a semiconductor wafer, a glass substrate for an FPD (flat panel display) or a photomask substrate (reticle). is there.
[0002]
[Prior art]
In general, in a semiconductor device manufacturing process, for example, a resist solution is applied to a surface of a semiconductor wafer or a glass substrate for FPD (hereinafter, referred to as a wafer, etc.), and a circuit pattern is reduced by using an exposure apparatus such as a stepper to reduce the resist. A photolithography technique is used in which a film is exposed and a developing solution is applied (supplied) to the exposed wafer surface to perform a developing process.
[0003]
In the development processing step, a spray method of spraying a developing solution onto a resist on a surface of a wafer or the like and a paddle method of applying a developing solution on a surface of a wafer or the like are generally known. As another method, a pair of wafers or the like to be developed are opposed to each other with a predetermined gap, and the gap is filled with a developing solution by using a capillary phenomenon, and a liquid film of the developing solution is formed on the surface of the wafer or the like. Is also known (for example, see Patent Document 1).
[0004]
[Patent Document 1]
JP-A-6-244097 (Claims, paragraph number 0011, FIG. 3)
[0005]
[Problems to be solved by the invention]
However, the spray method consumes a large amount of the developing solution, and it is difficult to spray (supply) the developing solution uniformly on the surface of a wafer or the like. Therefore, there is a problem that pattern dimensions such as a line width become non-uniform. Was.
[0006]
The paddle method does not cause a problem such as spray development, but since the liquid film surface of the developer is an open free surface, the liquid surface is wavy, and accordingly, the resist contact surface ( The reaction surface also moves, resulting in a problem that pattern dimensions such as line width become non-uniform. Further, even in the paddle system, there is a problem that it is difficult to uniformly and uniformly pour the developer on the surface of the wafer or the like.
[0007]
On the other hand, in the developing method described in JP-A-6-244097, the consumption of the developing solution can be reduced as compared with the spray method and the paddle method. There is a problem that the pattern size such as the line width becomes non-uniform because the developer supplied to the surface of the substrate flows.
[0008]
The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a developing method and a developing apparatus capable of achieving uniform pattern dimensions such as line width and reducing the consumption of a developing solution. It is assumed that.
[0009]
[Means for Solving the Problems]
In order to achieve the above object, a development processing method of the present invention has a plurality of small holes extending at least along an axial direction by facing a substrate to be processed and a flat plate for forming a liquid film with a predetermined gap in parallel with each other. The developer is supplied into the gap from the small hole while moving the tubular developer supply nozzle from one end of the gap to the other end, thereby filling the gap with the developer and covering the gap. A liquid film of a developing solution is formed on the surface of the processing substrate (claim 1).
[0010]
In the developing method of the present invention, the developer supply nozzle may have any form as long as it has a tubular shape having at least a plurality of small holes along the axial direction. Alternatively, a plurality of small holes may be formed in a plurality of rows at appropriate intervals. In this case, the developer may be supplied to the developer supply nozzle at one end of the tubular member, but is preferably supplied from both ends. When the developer is supplied from both ends of the tubular member in this manner, when the small holes are formed at equal intervals, the opening area of the small holes is gradually increased from the end to the center. Is more preferred. Further, when the opening areas of the small holes are the same, it is better to gradually reduce the distance from the end to the center. Further, the developer supply nozzle can be formed of a porous tubular member having a large number of small holes all around.
[0011]
In the developing method of the present invention, the developing solution may be supplied from small holes of each of the developing solution supply nozzles while a plurality of the developer supply nozzles are moved into the gap at intervals. Item 2).
[0012]
Further, a turbulence of the supplied developer may be suppressed by a blade piece protruding rearward in the moving direction of the developer supply nozzle. The shape of the wing piece may be arbitrary, but it is preferable that the wing piece has a tapered shape narrowing toward the tip. It is also possible to use two developer supply nozzles having wings protruding therefrom. In this case, two developer supply nozzles projecting the wing pieces are arranged side by side at intervals in a direction intersecting the moving direction, and the developer is supplied from the small holes of each developer supply nozzle while moving in the gap. It is better to supply (claim 4).
[0013]
Further, the developer supply nozzle may be rotated in the circumferential direction of the nozzle while moving. In this case, the rotation direction of the nozzle may be arbitrary, but it is preferable to rotate the nozzle toward the substrate to be processed.
[0014]
Further, a substrate to be processed may be used as the liquid film forming flat plate.
[0015]
Further, a development processing apparatus according to the present invention embodies the development processing method according to claim 1, wherein a mounting table on which a substrate to be processed is mounted is disposed opposite to the mounting table. A liquid film forming flat plate that forms a predetermined gap between the substrate to be processed mounted on the mounting table, a tubular developer supply nozzle having at least a plurality of small holes extending in the axial direction, and the developer supply nozzle Nozzle moving means for moving the gap from one side end to the other side end of the gap (claim 7).
[0016]
In the development processing apparatus of the present invention, as described above, the developer supply nozzle may have any form as long as it has a tubular shape having at least a plurality of small holes along the axial direction. A plurality of small holes may be formed in one or more rows along the axial direction at appropriate intervals. In this case, the developer may be supplied to the developer supply nozzle at one end of the tubular member, but is preferably supplied from both ends. When the developer is supplied from both ends of the tubular member in this manner, when the small holes are formed at equal intervals, the opening area of the small holes is gradually increased from the end to the center. Is more preferred. Further, when the opening areas of the small holes are the same, it is better to gradually reduce the distance from the end to the center. Further, the developer supply nozzle can be formed of a porous tubular member having a large number of small holes all around.
[0017]
Further, in the developing apparatus according to the present invention, the developing solution supply nozzle may be formed by a plurality of nozzles which move in the gap at intervals.
[0018]
Further, the developer supply nozzle may be provided with a blade piece protruding rearward in the moving direction of the nozzle. In this case, the shape of the wing piece may be arbitrary, but it is preferable that the wing piece has a tapered shape narrowing toward the tip. It is also possible to use two developer supply nozzles having wings protruding therefrom. In this case, two developer supply nozzles projecting the wing pieces are arranged side by side at intervals in a direction intersecting the moving direction, and the developer is supplied from the small holes of each developer supply nozzle while moving in the gap. It is better to supply (claim 10).
[0019]
Further, the developer supply nozzle may be formed so as to be movable and rotatable in the same direction. In this case, the rotation direction of the nozzle may be arbitrary, but it is preferable to rotate the nozzle toward the substrate to be processed.
[0020]
Further, a substrate to be processed may be used in place of the liquid film forming flat plate.
[0021]
According to the first and seventh aspects of the present invention, the substrate to be processed and the flat plate for forming a liquid film are opposed to each other with a predetermined gap in parallel with each other, so that the liquid of the developer supplied to the surface of the substrate to be processed is provided. A region for forming a film can be secured. Then, while moving the tubular developer supply nozzle having a plurality of small holes along at least the axial direction from one side end of the gap (liquid film forming region) to the other side end, the developer is supplied from the small hole into the gap. By supplying the developer, from the start to the end of the development, the movement of the developer is kept extremely static, and a liquid film of the developer is formed on the surface of the substrate to be processed while the gap is filled with the developer. To develop. Therefore, the pattern dimensions such as the line width can be made uniform by making the plane uniform. Further, since the liquid film of the developing solution can be formed uniformly without being affected by the hydrophobicity of the resist, the uniformity of the pattern dimensions such as the line width can be improved. Further, the amount of the developing solution is sufficient for a thin gap (liquid film forming region) set at a predetermined interval, so that the amount of the developing solution can be reduced.
[0022]
According to the second and eighth aspects of the present invention, the developer is supplied from the small holes of each developer supply nozzle while moving the plurality of developer supply nozzles into the gap at intervals. A plurality of nozzles can be moved while supplying (discharging) the developing solution as slowly as possible from the small holes, so that the movement of the developing solution during development is kept more static and the uniformity of the pattern such as line width is improved. Can be achieved. Further, since a plurality of nozzles are simultaneously moved, the development processing speed can be increased.
[0023]
According to the third and ninth aspects of the present invention, the developing solution being developed is suppressed by suppressing the turbulent flow of the supplied developing solution by the blade piece projecting rearward in the moving direction of the developing solution supply nozzle. Can be kept more static, so that the uniformity of the pattern such as the line width can be further improved.
[0024]
According to the fourth and tenth aspects of the present invention, two developer supply nozzles projecting from the blades are arranged side by side in the direction intersecting the moving direction at intervals, and each developer is moved while moving in the gap. By supplying the developing solution from the small hole of the supply nozzle, air is released from the space provided between both nozzles, and the movement of the developing solution on both sides of the substrate to be processed and the liquid film forming flat plate side is evenly balanced. Therefore, the uniformity of the pattern such as the line width can be further improved.
[0025]
According to the fifth and eleventh aspects of the invention, by rotating the developer supply nozzle in the circumferential direction of the nozzle while moving, the influence of the passage of the developer supply nozzle, that is, the cavity of the developer immediately after the nozzle has passed Since the influence of the portion can be suppressed, it is possible to further improve the uniformity of the pattern such as the line width in addition to the first and second aspects of the invention.
[0026]
According to the sixth and twelfth aspects of the present invention, by using a substrate to be processed as a flat plate for forming a liquid film, development processing of two substrates can be performed simultaneously in one step. In addition to the fifth aspect, the processing efficiency can be further improved.
[0027]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In this embodiment, a case will be described in which a developing apparatus according to the present invention is applied to a developing process of a semiconductor wafer (hereinafter, referred to as a wafer).
[0028]
◎ First embodiment
FIG. 1 is a schematic plan view showing an example of a developing apparatus according to the present invention, FIG. 2 is a schematic side view of the developing apparatus, and FIG. 3 is a schematic plan view showing another embodiment of a mounting table according to the present invention ( a) and a schematic side view (b), FIG. 4 is an enlarged sectional view of a main part showing a developing process of a first embodiment of the developing method of the present invention, and FIG. 5 is a developing solution supply nozzle of the first embodiment. It is principal part sectional drawing which shows an example.
[0029]
The developing apparatus includes a mounting table 10 on which a wafer W to be processed is mounted, and which holds the wafer W by suction by a vacuum apparatus V shown in FIG. 3, and a liquid film disposed above the mounting table 10. And a forming flat plate 20. The mounting table 10 may have any size as long as the mounting table 10 can be kept horizontal. For example, it may be approximately the same size as the wafer W, or may be smaller than the wafer W in order to reduce the contact area. Alternatively, as shown in FIG. 3, the mounting portion 10b may have a shape extending in three radial directions. In FIG. 3, reference numeral 10a is a suction hole. In this case, the wafer W mounted on the mounting table 10 and the flat plate 20 for forming a liquid film are disposed to face each other in parallel with a predetermined gap 30 therebetween. A film formation region is formed. The size of the gap 30 (liquid film forming region) varies depending on the type of the developing solution, the thickness of the liquid film to be formed, and the like, but is set to about 2 to 5 mm. This interval may be any size as long as it can pass the developing nozzle 40 described later.
[0030]
The mounting table 10 is provided with three support pins 11 for transferring the wafer W to and from a wafer transfer arm (not shown) so as to be able to move up and down. These support pins 11 slidably penetrate through holes (not shown) provided in the mounting table 10, as shown in FIGS. 1 and 2, or as shown in FIG. It is provided beside the table 10. The lower ends of the support pins 11 protruding downward from the mounting table 10 are erected on the support member 12, and each of the support pins 11 is mounted on the mounting table 10 by an elevating means such as an elevating cylinder 13 connected to the support member 12. It is formed so that it can appear and disappear on the mounting surface. The liquid film forming flat plate 20 is connected to an elevating mechanism 21 composed of, for example, a ball screw. The elevating mechanism 21 is driven to move forward and backward with respect to the mounting table 10. Is adjusted. In this case, the lifting mechanism 21 and the liquid film forming flat plate 20 may be rotatably connected.
[0031]
Further, the development processing apparatus includes a tubular developer supply nozzle 40 having at least a plurality of small holes 41 extending along the axial direction (hereinafter, referred to as a development nozzle 40). The developing nozzle 40 is movably mounted on a pair of guide rails 50 provided on both sides of the mounting table 10 and is connected to a moving / elevating mechanism 60 (moving / elevating means) serving as a nozzle moving means. The gap 30 (liquid film forming region) is formed so as to be vertically movable and horizontally movable so as to move from one end to the other end of the gap 30 (liquid film forming region).
[0032]
In this case, as shown in FIG. 4, the developing nozzle 40 is, for example, along the axial direction of a tubular member 42 of, for example, stainless steel or epoxy resin having an outer diameter of about 1 to 4 mm and an inner diameter of about 0.5 to 3.5 mm. A plurality of small holes 41 formed at intervals are provided. A developer storage tank 44 as a developer supply source is connected to both ends of a hollow portion 42 a of the tubular member 42 via a supply pipe 43. I have. A part of the supply pipe 43 is formed of a tube having a length that allows the moving range of the developing nozzle 40. Further, an opening / closing means such as an air operation valve 45 and a pressure feeding means such as a pump 46 which can adjust the flow rate of the developer are provided in the supply pipe 43. The opening area of the small hole 41 is gradually increased from the end of the tubular member 42 toward the center. By gradually increasing the opening area of the small hole 41 from the end to the center of the tubular member 42 in this manner, the developer supplied into the hollow portion 42a of the tubular member 42 from both end sides can be reduced. It is possible to uniformly discharge (supply) from the holes 41. The opening diameter and interval of the small holes 41 are appropriately set according to the size of the wafer W, the type of the developing solution, and the like.
[0033]
Here, a case has been described in which a plurality of small holes 41 are provided at equal intervals, and the opening area of the small holes 41 is gradually increased from the end side of the tubular member 42 toward the center side. The opening area may be the same, and the interval may be gradually reduced from the end to the center of the tubular member 42. Further, the small holes 41 may be provided in a plurality of rows of the tubular member 42, for example, as shown in FIG. 7, in two rows on the lower end side and the upper end side of the tubular member 42, or may be provided in an arbitrary plurality of rows. It may be provided. As shown in FIG. 8, the developing nozzle 40A may be formed of a porous tubular member 42A having a large number of small holes 41 all around. As described above, by forming the developing nozzle 40A with the porous tubular member 42A having a large number of small holes 41 on the entire circumference, the developer can be uniformly discharged (supplied) from the entire circumference of the developing nozzle 40. it can. In these cases, the pressure of the developer may be adjusted by the pump 46.
[0034]
The guide rail 50 has a first rinsing nozzle 71, a developing solution suction nozzle 73, and a second rinsing nozzle 72 formed in a tubular shape similarly to the developing nozzle 40, in addition to the developing nozzle 40. And a drying nozzle 74 are mounted slidably and vertically. In this case, similarly to the developing nozzle 40, the first and second rinse nozzles 71 and 72 are provided with a plurality of nozzle holes (not shown) along the axial direction of the tubular member. Each of the developer suction nozzle 73 and the drying nozzle 74 is provided with a slit-shaped suction hole extending along the axial direction of the tubular member, and a drying gas (eg, air) injection hole (not shown). The first rinsing nozzle 71, the developing solution suction nozzle 73, the second rinsing nozzle 72, and the drying nozzle 74 are also connected to the moving / elevating mechanism 60 so as to be vertically movably movable. The gap 30 is formed so as to be movable in a horizontal direction so as to move from one side end to the other side end. A nozzle cleaning bath 75 is provided at a standby position (home position) of the nozzles 40, 71 to 74. The rinsing nozzles 71 and 72, the developer suction nozzle 73, and the drying nozzle 74 may have different diameters, and the gaps 30 during use may be different.
[0035]
Next, the developing method of the present invention will be described with reference to FIGS. First, when a wafer transfer arm (not shown) holds the wafer W and enters the developing device, the support pins 11 move up to receive the wafer W. The wafer transfer arm that has delivered the wafer W retreats from the inside of the developing device. When the support pins 11 that have received the wafer W are lowered and the wafer W is mounted on the mounting table 10, the vacuum apparatus V is driven to hold the wafer W by suction. Thereafter, the liquid film forming flat plate 20 is moved (elevated) vertically by the elevating mechanism 21 to correspond to the film thickness of the developing solution formed on the surface of the wafer W mounted on the mounting table 10 (liquid accumulation). The gap 30 (liquid film formation region) is set by adjusting the distance so as to be the same as the distance. In this state, as shown in FIGS. 4 and 6A and 6B, the developing nozzle 40 is moved from one end of the gap 30 (the liquid film forming area) to the other end while moving the small nozzle. When the developer D is discharged (supplied) from the space 41 into the gap 30 (liquid film forming area), the developer D is filled in the gap 30 (liquid film forming area) and the liquid film of the developer D is formed on the surface of the wafer W. Is formed. At this time, the moving speed of the developing nozzle 40 is, for example, 50 to 150 mm / sec, and the discharge amount (supply amount) of the developing solution is, for example, 5 to 50 ml / sec.
[0036]
Accordingly, the movement of the developing solution D during the development is kept extremely static from the start to the end of the developing process, and the developing solution D is filled on the surface of the wafer W in a state in which the gap 30 (liquid film forming region) is filled with the developing solution D. A liquid film of D can be formed. Thereby, the liquid film of the developer D can be formed uniformly without being affected by the hydrophobicity of the resist R. In addition, since only the developer corresponding to the thin gap 30 (the liquid film forming region) is sufficient, the consumption of the developer can be reduced.
[0037]
In the above description, the development process by moving the development nozzle 40 has been described. However, after the development nozzle 40 is moved from one end to the other end of the gap 30 (liquid film formation region), a predetermined While moving the first rinsing nozzle 71 similarly after a certain time, a rinsing liquid, for example, pure water is discharged (supplied) from a rinsing liquid supply source (not shown) to stop the dissolution reaction between the developing liquid and the resist. While moving the suction nozzle 73 in the same manner, the dissolution product generated by reacting with the developing solution by the suction action of the suction means (not shown) is sucked. Thereafter, a rinsing liquid, for example, pure water is discharged (supplied) from a rinsing liquid supply source (not shown) while moving the second rinsing nozzle 72 in the same manner, and a rinsing process is performed. Finally, while moving the drying nozzle 74 in the same manner, a dry gas (not shown), for example, a dry gas is blown from a supply source of purified air to blow off a rinse liquid adhering to the wafer W to dry. The rinsing process and the drying process may be performed by reciprocating the second rinsing nozzle 72 and the drying nozzle 74 respectively.
[0038]
After performing the developing, rinsing, and drying processes as described above, the developing nozzle 40, the first rinsing nozzle 71, the developer suction nozzle 73, the second rinsing nozzle 72, and the drying nozzle 74 return to the home position. . Thereafter, the suction state of the mounting table 10 is released, the support pins 11 are raised, and the wafer W is delivered to the wafer transfer arm (not shown) which enters the developing device, and the wafer W is unloaded. Thereafter, the same operation as described above is repeated to perform the development processing on the wafer W.
[0039]
◎ Second embodiment
FIG. 9 is an enlarged sectional view of a main part showing a development processing state of the second embodiment of the development processing method of the present invention.
[0040]
In the second embodiment, the plurality of developing nozzles 40, for example, two, are moved into the gap 30 (liquid film forming region) at intervals L in the moving direction of the developing nozzle 40, and the small holes 41 of each developing nozzle 40 are moved. This is a case in which the developer D is supplied from.
[0041]
As described above, the developer D is supplied from the small holes 41 of each of the developing nozzles 40 while the plurality of, for example, two developing nozzles 40 are moved into the gap 30 (liquid film forming region) at intervals L in the moving direction. Accordingly, the developing solution is discharged (supplied) from the small holes 41 of each developing nozzle 40 as slowly as possible in comparison with the case where the developing solution is discharged (supplied) from the small holes 41 of the single developing nozzle 40 as in the first embodiment. The two developing nozzles 40 can be moved while moving. Therefore, the movement of the developing solution D during the development can be kept more static, and the uniformity of the pattern such as the line width can be improved. Further, since the plurality of developing nozzles 40 are simultaneously moved, the developing processing speed can be increased.
[0042]
In the second embodiment, the developing nozzle 40 may be replaced with a porous developing nozzle 40A. In the second embodiment, the other parts are the same as those in the first embodiment.
[0043]
◎ Third embodiment
FIG. 10 is an enlarged sectional view of a main part showing a developing process of a third embodiment of the developing method of the present invention (a) and a perspective view (b) showing a developing nozzle 40B in the third embodiment.
[0044]
In the third embodiment, a wing 80 is provided on the rear side in the movement direction of the developing nozzle 40B to suppress the turbulent flow of the developer D discharged (supplied) from the small hole 41 of the developing nozzle 40B. In this case, the movement of the developing solution during development is kept more static. In this case, the blade piece 80 is formed integrally with the tubular member 42B of the developing nozzle 40B, and has a tapered surface 81 that is narrower toward the tip (rear side in the moving direction).
[0045]
When the developing nozzle 40B formed as described above is moved from one end side to the other end side of the gap 30 (liquid film forming region) in the same manner as in the first embodiment to perform the developing process, the leading end (movement) Wing 80 having a tapered surface 81 narrowing toward the rear (in the rearward direction), the turbulent flow of the developer D can be rectified and suppressed, and the movement of the developer D during development is kept more static. Therefore, the uniformity of the pattern such as the line width can be further improved.
[0046]
In the third embodiment, the other parts are the same as those of the first embodiment.
[0047]
◎ Fourth embodiment
FIG. 11 is an enlarged sectional view of a main part showing a developing process according to a fourth embodiment of the developing method of the present invention.
[0048]
In the fourth embodiment, two developing nozzles 40C each having a wing piece 80A projecting therefrom are arranged side by side at an interval L1 in a direction intersecting with the moving direction, and the other developing nozzles are arranged from one end side of the gap 30 (liquid film forming region). The developer is discharged (supplied) from the small holes 41 of the respective developing nozzles 40C while moving toward the end side to fill the gap 30 (liquid film forming region) with the developer to form a liquid film on the surface of the wafer W. This is the case. In the fourth embodiment, the wing 80A of each developing nozzle 40C is formed integrally with the tubular member 42C, and extends horizontally from the lower end or upper end of the tubular member 42C to the rear in the moving direction. It is formed in a substantially triangular cross section having an inclined surface 83 connecting an upper end or a lower end and a tip of a horizontal plane 82.
[0049]
In this manner, two developing nozzles 40C projecting the wing pieces 80A are arranged in parallel in the direction intersecting with the moving direction at an interval L1, and from one end side of the gap 30 (liquid film forming area) to the other end side. By discharging (supplying) the developing solution from the small holes 41 of each developing nozzle 40C while moving toward the side, the air A escapes from the interval L1 provided between the developing nozzles 40C, and the wafer W side and the liquid film formation are performed. The movement of the developer D on both sides of the flat plate 20 can be balanced evenly. Therefore, the uniformity of the pattern such as the line width can be further improved.
[0050]
In the fourth embodiment, the other parts are the same as those of the first embodiment.
[0051]
◎ Fifth embodiment
FIG. 12 is an enlarged sectional view of a main part showing a developing process according to a fifth embodiment of the developing method of the present invention.
[0052]
The fifth embodiment is a case where the developing nozzle 40D is rotated in the circumferential direction of the developing nozzle 40D while moving. In this case, it is preferable that the developing nozzle 40D is provided with a plurality of small holes 41 in a plurality of rows along the axial direction, for example, three or more rows. Further, it is preferable that the rotation direction of the developing nozzle 40D is set toward the wafer W. The reason is that the developing solution discharged (supplied) from the small holes 41 with the rotation of the developing nozzle 40D can be positively supplied to the wafer W. In this way, by rotating the developing nozzle 40 in the circumferential direction (rotating toward the wafer W) while moving the developing nozzle 40, the developing solution discharged (supplied) from the small holes 41 of the developing nozzle 40D is moved to the surface of the wafer W. To form a liquid film. Further, since the influence of the passage of the developing nozzle 40D, that is, the influence of the cavity of the developer D immediately after the passage of the developing nozzle 40D can be suppressed, the uniformity of the pattern such as the line width can be further improved. it can.
[0053]
In the fifth embodiment, a porous developing nozzle A may be used instead of the developing nozzle 40D. In the fifth embodiment, the other parts are the same as those in the first embodiment.
[0054]
◎ Sixth embodiment
FIG. 13 is an enlarged sectional view of a main part showing a sixth embodiment of the development processing method of the present invention.
[0055]
The sixth embodiment is a case where two wafers W can be developed simultaneously in one process. That is, a gap 30 (liquid film formation area) is formed by using the wafer W instead of the liquid film formation flat plate 20 to face the two wafers W in parallel to each other, and forming the gap 30 (liquid film formation area). The developing solution is discharged (supplied) from the small hole 41 while moving the developing nozzle, for example, the developing nozzle 40C of the fourth embodiment, from one end side to the other end side of the gap) (the liquid film forming region). This is a case where the developer D is filled to form a liquid film on the surfaces of both wafers W.
[0056]
Therefore, according to the sixth embodiment, the development processing of two wafers W can be performed simultaneously in one step, so that the processing efficiency can be further improved. In this case, two developing nozzles 40C projecting the wing pieces 80A are arranged side by side at an interval L1 in a direction intersecting with the moving direction, and from one end side of the gap 30 (liquid film forming region) to the other end side. By discharging (supplying) the developing solution from the small holes 41 of each developing nozzle 40C while moving the developing nozzle 40C, the air A escapes from the space L1 provided between the developing nozzles 40C, and the wafer W side and the liquid film forming Since the movement of the developer D on both sides of the flat plate 20 can be evenly balanced, the uniformity of the pattern such as the line width can be further improved.
[0057]
In the above description, a case has been described where two developing nozzles 40C projecting the wing pieces 80A are arranged side by side at an interval L1 in a direction intersecting the moving direction, but the other developing nozzles 40, 40A, and 40B are arranged in parallel. May be used. Further, in the sixth embodiment, the other parts are the same as those of the first embodiment.
[0058]
◎ Other embodiments
(1) In the above embodiment, the case where the mounting table 10 is fixed and does not rotate has been described. However, the mounting table 10 is connected to the rotation shaft of the motor M as shown by a two-dot chain line in FIG. The mounting table 10 and the wafer W may be rotated in the horizontal direction simultaneously with the movement of the developing nozzles 40, 40A, 40B, 40C, and 40D. When the rotation is used in this manner, preferably, when the developing nozzles 40 and 40A to 40D are moved from one end of the gap 30 to the other end to discharge (supply) the developer, the developing nozzle 40, 40A to 40D is mounted. It is preferable to rotate the mounting table 10 and the wafer W during the subsequent cleaning processing and drying processing without rotating the mounting table 10 and the wafer W. For example, as shown in FIG. 14, after performing the developing / coating process without rotating the mounting table 10 and the wafer W, the liquid film forming flat plate 20 is moved and raised to a height where the cleaning nozzle (rinse nozzle) 72A enters. (FIG. 14A). Next, after lowering the liquid film forming flat plate 20 to secure the gap 30 through which the rinse nozzle 72A moves, the rinse nozzle 72A is moved from one side end of the gap 30 to the center to discharge the rinse liquid, for example, pure water. At the same time as (supply), the mounting table 10 and the wafer W are rotated (see FIGS. 14B and 14C). Thereafter, the discharge (supply) of the pure water from the rinsing nozzle 72A is stopped, and after or at the same time as the rinsing nozzle 72A returns to the home position, the mounting table 10 and the wafer W are rotated at a high speed, and The attached pure water is shaken off and dried (FIG. 14D).
[0059]
(2) In the above embodiment, the case where the substrate to be processed is the wafer W has been described. However, it goes without saying that development processing can be similarly performed on other substrates such as a glass substrate for FPD and a mask substrate (reticle). When developing a square plate to be processed such as a glass substrate for FPD or a mask substrate, for example, a mask substrate (reticle) RE, as shown in FIG. It is necessary to perform processing using a rectangular (square) liquid film forming flat plate 20A and a rectangular (square) mounting table 10A. Further, by using the liquid film forming flat plate 20A and the mounting table 10A, development processing can be performed regardless of the shape of the substrate to be processed.
[0060]
【The invention's effect】
As described above, according to the present invention, since the configuration is as described above, the following effects can be obtained.
[0061]
1) According to the first and seventh aspects of the present invention, one side end to the other side end of a gap (liquid film forming region) formed by a substrate to be processed and a flat plate for forming a liquid film, which are disposed to face each other in parallel. By moving the developing solution supply nozzle having a plurality of small holes along the axial direction toward the direction, supplying the developing solution from the small holes into the gap, the movement of the developing solution during the development from the start to the end of the development, The developing solution can be formed by forming a liquid film of the developing solution on the surface of the substrate to be processed in a state where the gap is filled with the developing solution while being kept extremely static. Therefore, the in-plane uniformity can be achieved without being affected by the hydrophobicity of the resist, and the uniformity of pattern dimensions such as line width can be improved. Further, since the amount of the developer used is only the amount of the thin gap (liquid film forming region) set at a predetermined interval, the amount of the developer can be reduced.
[0062]
2) According to the second and eighth aspects of the present invention, the developer is supplied from the small holes of each developer supply nozzle while moving the plurality of developer supply nozzles into the gap at intervals. Since the plurality of nozzles can be moved while supplying (discharging) the developing solution as slowly as possible from the small holes of the nozzles, the movement of the developing solution during development can be further statically maintained in addition to the above 1). The uniformity of the pattern such as the width can be improved. Further, since a plurality of nozzles are simultaneously moved, the development processing speed can be increased.
[0063]
3) According to the third and ninth aspects of the invention, the turbulence of the supplied developing solution is suppressed by the wing pieces projecting rearward in the moving direction of the developing solution supply nozzle, so that the developing solution is not developed. Since the movement of the developer can be kept more static, the uniformity of the pattern such as the line width can be further improved in addition to the above 1).
[0064]
4) According to the fourth and tenth aspects of the present invention, two developer supply nozzles projecting from the wing pieces are arranged side by side in the direction intersecting with the moving direction and are arranged side by side. By supplying the developing solution from the small hole of the developing solution supply nozzle, air is released from the space provided between the nozzles, and the movement of the developing solution on both sides of the substrate to be processed and the liquid film forming flat plate side is equalized. Therefore, in addition to the above 1) and 3), the uniformity of the pattern such as the line width can be further improved.
[0065]
5) According to the fifth and eleventh aspects, the developer supply nozzle is rotated in the circumferential direction of the nozzle while moving, so that the developer supply nozzle passes through, that is, the developer immediately after the nozzle passes. In this case, the influence of the hollow portion can be suppressed, and in addition to the above 1), the uniformity of the pattern such as the line width can be further improved.
[0066]
6) According to the sixth and twelfth aspects of the present invention, the development processing of two substrates can be simultaneously performed in one step by using the substrate to be used for the liquid film forming flat plate, so that further processing can be performed. Efficiency can be improved.
[Brief description of the drawings]
FIG. 1 is a schematic plan view showing an example of a developing apparatus according to the present invention.
FIG. 2 is a schematic side view of the developing device.
FIG. 3 is a schematic plan view (a) and a schematic side view (b) showing another embodiment of the mounting table according to the present invention.
FIG. 4 is an enlarged sectional view of a main part showing a developing process of the first embodiment of the developing method of the present invention.
FIG. 5 is a schematic sectional view showing a developing nozzle of the first embodiment.
FIG. 6 is a schematic perspective view illustrating a developing process according to the first embodiment.
FIG. 7 is an enlarged sectional view of a main part showing a developing process of another embodiment of the developing nozzle of the first embodiment.
FIGS. 8A and 8B are an enlarged sectional view of a main part and a perspective view of a developing nozzle of a developing nozzle according to another embodiment of the first embodiment, showing a developing process of another embodiment.
FIG. 9 is an enlarged sectional view of a main part showing a developing process according to a second embodiment of the developing method of the present invention.
FIGS. 10A and 10B are an enlarged sectional view of a main part showing a developing process of a third embodiment of the developing method of the present invention, and a perspective view of a developing nozzle thereof.
FIG. 11 is an enlarged sectional view of a main part showing a developing process according to a fourth embodiment of the developing method of the present invention.
FIG. 12 is an enlarged sectional view of a main part showing a developing process according to a fifth embodiment of the developing method of the present invention.
FIG. 13 is an enlarged sectional view showing a main part of a developing process according to a sixth embodiment of the present invention.
FIG. 14 is an explanatory diagram showing an example of a seventh embodiment of the developing method according to the present invention, and washing and drying processing.
FIG. 15 is a schematic plan view (a) and a schematic side view (b) showing another embodiment of the mounting table and the liquid film forming flat plate according to the present invention.
[Explanation of symbols]
10,10A mounting table
20,20A Flat plate for liquid film formation
30 gap (liquid film formation area)
40, 40A-40D Developing nozzle (developing solution supply nozzle)
41 small hole
60 Moving / elevating mechanism (moving / elevating means, nozzle moving means)
80,80A Wing piece
W Semiconductor wafer (substrate to be processed)
D developer
L Interval of developing nozzle 40
L1 Interval of developing nozzle 40C
RE reticle (substrate to be processed)

Claims (12)

被処理基板と液膜形成用平板とを互いに平行に所定の隙間をあけて対向させ、少なくとも軸方向に沿う複数の小孔を有する管状の現像液供給ノズルを、上記隙間の一側端から他側端に向かって移動しつつ小孔から隙間内に現像液を供給することにより、上記隙間内に現像液を充満させて上記被処理基板の表面に現像液の液膜を形成する、ことを特徴とする現像処理方法。The substrate to be processed and the flat plate for forming a liquid film are opposed to each other with a predetermined gap in parallel with each other, and a tubular developer supply nozzle having at least a plurality of small holes extending in the axial direction is placed at one end of the gap from the other end. By supplying the developer into the gap from the small hole while moving toward the side end, the gap is filled with the developer and a liquid film of the developer is formed on the surface of the substrate to be processed. Characteristic development processing method. 請求項1記載の現像処理方法において、
上記現像液供給ノズルの複数個を間隔をおいて隙間内に移動させつつ各現像液供給ノズルの小孔から現像液を供給する、ことを特徴とする現像処理方法。
The development processing method according to claim 1,
A developing method comprising supplying a developing solution from a small hole of each developing solution supply nozzle while moving a plurality of the developing solution supply nozzles into the gap at intervals.
請求項1記載の現像処理方法において、
上記現像液供給ノズルにおける移動方向の後方側に突設された翼片により、供給された現像液の乱流を抑制する、ことを特徴とする現像処理方法。
The development processing method according to claim 1,
A developing method, wherein turbulence of the supplied developer is suppressed by a blade piece protruding rearward in the moving direction of the developer supply nozzle.
請求項3記載の現像処理方法において、
上記翼片を突設する現像液供給ノズルを移動方向と交差する方向に間隔をおいて2個並設して、隙間内を移動させつつ各現像液供給ノズルの小孔から現像液を供給する、ことを特徴とする現像処理方法。
The development processing method according to claim 3,
Two developer supply nozzles projecting the wing pieces are arranged side by side at intervals in a direction intersecting the moving direction, and the developer is supplied from the small holes of each developer supply nozzle while moving in the gap. And a developing method.
請求項1又は2記載の現像処理方法において、
上記現像液供給ノズルを移動しつつノズルの周方向に回転させる、ことを特徴とする現像処理方法。
The development processing method according to claim 1 or 2,
A developing method comprising: rotating the developer supply nozzle in the circumferential direction of the nozzle while moving the nozzle.
請求項1ないし5のいずれかに記載の現像処理方法において、
上記液膜形成用平板が被処理基板である、ことを特徴とする現像処理方法。
The developing method according to any one of claims 1 to 5,
A developing method, wherein the flat plate for forming a liquid film is a substrate to be processed.
被処理基板を載置する載置台と、
上記載置台の上方に対向して配設され、載置台に載置された被処理基板との間に所定の隙間を形成する液膜形成用平板と、
少なくとも軸方向に沿う複数の小孔を有する管状の現像液供給ノズルと、
上記現像液供給ノズルを、上記隙間の一側端から他側端に向かって移動するノズル移動手段と、を具備することを特徴とする現像処理装置。
A mounting table for mounting the substrate to be processed,
A liquid film forming flat plate that is disposed to face above the mounting table and forms a predetermined gap between the processing target substrate mounted on the mounting table,
A tubular developer supply nozzle having a plurality of small holes along at least the axial direction,
A developing means for moving the developing solution supply nozzle from one side end to the other side end of the gap.
請求項7記載の現像処理装置において、
上記現像液供給ノズルは、互いに間隔をおいて隙間内を移動する複数個のノズルである、ことを特徴とする現像処理装置。
The developing device according to claim 7,
The development processing apparatus according to claim 1, wherein the developer supply nozzles are a plurality of nozzles that move in a gap at intervals.
請求項7記載の現像処理装置において、
上記現像液供給ノズルは、該ノズルの移動方向の後方側に翼片を突設してなる、ことを特徴とする現像処理装置。
The developing device according to claim 7,
The developing solution supply nozzle is characterized in that a blade piece protrudes rearward in the moving direction of the nozzle.
請求項9記載の現像処理装置において、
上記翼片を突設する現像液供給ノズルを、該ノズルの移動方向と交差する方向に間隔をおいて2個並設してなる、ことを特徴とする現像処理装置。
The development processing apparatus according to claim 9,
2. A developing apparatus, comprising two developer supply nozzles provided with the wings protruding therefrom at intervals in a direction intersecting the direction of movement of the nozzles.
請求項7又は8記載の現像処理装置において、
上記現像液供給ノズルを、移動及び同方向に回転可能に形成してなる、ことを特徴とする現像処理装置。
The developing device according to claim 7, wherein
A developing apparatus wherein the developer supply nozzle is formed so as to be movable and rotatable in the same direction.
請求項7ないし11のいずれかに記載の現像処理装置において、
上記液膜形成用平板が被処理基板である、ことを特徴とする現像処理装置。
The developing device according to claim 7,
A development processing apparatus, wherein the flat plate for forming a liquid film is a substrate to be processed.
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CN105080766A (en) * 2014-05-20 2015-11-25 中外炉工业株式会社 Substrate coating apparatus and substrate coating method
KR20180114807A (en) * 2017-04-11 2018-10-19 비스에라 테크놀러지스 컴퍼니 리미티드 Apparatus and method for removing photoresist layer from alignment mark
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Publication number Priority date Publication date Assignee Title
CN105080766A (en) * 2014-05-20 2015-11-25 中外炉工业株式会社 Substrate coating apparatus and substrate coating method
CN105080766B (en) * 2014-05-20 2017-08-11 中外炉工业株式会社 The applying device of substrate and the coating method of substrate
KR20180114807A (en) * 2017-04-11 2018-10-19 비스에라 테크놀러지스 컴퍼니 리미티드 Apparatus and method for removing photoresist layer from alignment mark
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