KR20060109128A - Baking apparatus having a rotational plate - Google Patents

Abstract

Bake equipment is provided to prevent a wafer failure and to restrain a yield drop by performing uniformly a bake process on a wafer using a rotatable hot plate. Bake equipment(100) includes a predetermined plate. The predetermined plate(200) is capable of rotating. The bake equipment is used for performing a bake process on a wafer(W), wherein the wafer is coated with a photoresist layer. The predetermined plate is used for loading stable the wafer and rotating the wafer in an aiming rotation speed range. The predetermined plate is kept in a predetermined temperature range. At this time, the predetermined temperature is higher than the room temperature.

Description

Baking apparatus having a rotational plate}

1 is a view schematically showing a chamber-type baking equipment according to the prior art

2 is a view schematically showing a chamber-type baking equipment according to the present invention

<Description of the symbols for the main parts of the drawings>

100: baking equipment 200: hot plate

300: chamber 400: exhaust pipe

500: entrance W: wafer

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to semiconductor manufacturing equipment, and more particularly, to baking equipment for performing a baking process in a photo-lithography process.

In general, semiconductor devices are manufactured through a number of processes, such as ion implantation, film deposition, diffusion, photography, and etching. Among these processes, a photo process for forming a desired pattern is an essential step for manufacturing a semiconductor device.

As semiconductor devices become more integrated, the size of circuit patterns becomes finer, and the management of various parameters affecting the size of fine patterns becomes more stringent. In particular, in the semiconductor manufacturing process, the photo process directly affects the size of the fine pattern. This photolithography process involves applying a photoresist on a wafer to form a fine pattern on the wafer, exposing the applied photoresist to transfer a circuit pattern formed on a mask or reticle, and developing a series of exposed photoresists. It means to perform the process.

In other words, the photo process is to create a pattern of a mask or a reticle on the wafer to selectively define the areas to be etched or implanted and the areas to be protected. Coating process, the photoresist-coated wafer and a predetermined mask are aligned with each other, and then an exposure process of transferring a pattern of a mask or a reticle onto the wafer by irradiating light such as ultraviolet rays to the photoresist on the wafer through the mask and the exposure A photoresist of the completed wafer is developed to form a desired photoresist pattern.

Here, the developing process is to spray the developer on the photoresist exposed wafer to remove the exposed part according to the properties of the photoresist and to leave the unexposed part in the pattern, or to leave the exposed part in the pattern, and the unexposed part Will be removed.

In addition to the coating process, the exposure process and the developing process, the photographing process includes a hexamethyl disilane (HMDS) treatment process and a baking process for improving adhesion between the photoresist and the wafer.

In general, the baking process is largely divided into a soft bake process and a hard bake process.

In the soft bake process, the photoresist is applied onto the wafer, and then the solvent of the photoresist is slightly heated to volatilize to some extent so that the chemical reaction of the photoresist is not disturbed by the exposure during the exposure process. It refers to a process that improves the adhesion to the wafer to facilitate the subsequent process.

Meanwhile, the hard bake process is performed at a temperature of about 40 to 60 ° C. higher than the temperature during the soft bake process after developing the coated photoresist on the wafer. This is to enhance the adhesion between the photoresist and the wafer surface by removing moisture.

In this baking process, a chamber type baking apparatus is used which mounts a wafer on a plate in a chamber and bakes the wafer at a predetermined temperature.

1 is a view schematically showing a chamber-type baking equipment according to the prior art.

Referring to FIG. 1, the chamber baking equipment 10 discharges the hot plate 20 on which the wafer W is seated and the fume generated from the chamber 30 from the chamber 30 and the lower portion of the chamber 30. It consists of a plurality of exhaust pipes 40 and an entrance and exit 50 through which wafers are fed and withdrawn.

In the chamber baking apparatus 10 as described above, the wafer W is introduced into the chamber 30 through the entrance and exit 50, and the wafer W is placed on the hot plate 20. The heater (not shown) is added to the hot plate 20. The heater is attached inside or behind the hot plate 20 to serve to heat the hot plate 20. Thus, the baking process of the wafer coated with the photoresist is performed on the hot plate.

It is important that the wafer W be uniformly baked in the baking process as described above. In the case where the entire surface of the wafer W is unevenly baked, an allowable range of TPR (Thickness Photo Resist) may increase, or a critical dimension (CD) difference may occur in the wafer. In severe cases, a pattern bridge or local NO pattern of a portion of the wafer may occur.

In order to uniformly bake the wafer W, it is important to uniformly heat the hot plate, but the temperature atmosphere in the chamber must be uniformly formed.

However, in the chamber 30 as described above, the temperature of the chamber in the direction of the entrance and exit 50 where the wafers are inserted and drawn out is lower than the temperature of the chamber 30 in the exhaust pipe 40 direction. Therefore, the wafer W portion in the direction of the entrance and exit 50 and the wafer W portion in the exhaust pipe 40 direction have different temperature atmospheres, and the wafer is unevenly baked.

Therefore, if the wafer is non-uniformly baked, the wafer does not receive constant heat over the entire surface, and thus the allowable range of TPR (Thickness Photo Resist) becomes large, or the critical line width (CD: Critical Dimension) in the wafer is generated. ) Will cause a difference. In severe cases, a pattern bridge or local NO pattern of a portion of the wafer may occur. As a result, a defect occurs in the wafer and a problem in that the overall manufacturing yield is dropped.

Accordingly, an object of the present invention is to provide a semiconductor manufacturing equipment that can solve the above problems.

Another object of the present invention is to provide a semiconductor manufacturing apparatus capable of uniformly baking a wafer.

Another object of the present invention is to provide a baking apparatus capable of uniformly baking a wafer.

Still another object of the present invention is to provide a baking equipment of a semiconductor manufacturing equipment that can solve various problems caused by a phenomenon in which a wafer is unevenly baked in a baking equipment that performs a baking process.

In order to achieve the above objects, the baking apparatus according to an exemplary aspect of the present invention is characterized in that the plate for baking the photoresist-coated wafer is rotated.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. Since the descriptions in the embodiments are only shown and limited by way of example and without intention other than the intention of a person having ordinary knowledge in the art to which the present invention pertains, a thorough understanding of the present invention is provided. Obviously it should not be used to limit the scope.

2 is a view schematically showing a chamber-type baking equipment according to the present invention.

Referring to FIG. 2, the chamber-type baking equipment 100 includes fumes generated from the chamber 300 at the bottom of the chamber 300 and the chamber 300 and the chamber 300 on which the wafer W is seated and rotated. It consists of a plurality of exhaust pipe 400 for discharging and the entrance and exit 500 of the wafer input and withdrawal.

In the chamber baking equipment 100 as described above, the wafer W is introduced into the chamber 300 through the entrance and exit 500, and the wafer W is placed on the rotating hot plate 200. Thus, the baking process of the wafer proceeds on the hot plate.

When the wafer is baked using the rotating hot plate 200, uniform baking of the wafer is achieved. Therefore, the problem that the allowable range of TPR (Thickness Photo Resist), which is a problem caused by uneven baking of the wafer, becomes large, a problem that a threshold line width (CD) difference occurs, a pattern bridge or a local part of the wafer There is an effect that the problem that the in-no (NO) pattern is generated, etc. are solved. Therefore, wafer defects and yield drops are prevented in the baking equipment, thereby improving the performance of the baking equipment.

Baking equipment according to an embodiment of the present invention is not limited to the above embodiment, it can be variously designed and applied within the scope without departing from the basic principles of the present invention having a common knowledge in the art It will be obvious to one.

As described above, the baking apparatus according to the present invention can bake the wafer evenly by baking the wafer using the rotating hot plate. As a result, the TPR (Thickness Photo Resist) range becomes larger, the critical line width (CD) difference occurs, and the pattern bridge (pattern bridge) or a local no pattern of a portion of the wafer occurs. Etc., the effect is solved. Therefore, wafer defects and yield drops are prevented in the baking equipment, thereby improving the performance of the baking equipment.

Claims (3)

For baking equipment with plates: Semiconductor manufacturing equipment, characterized in that the plate rotates. The method of claim 1, The baking equipment is a baking equipment, characterized in that for baking a wafer coated with a photoresist. The method of claim 1, Baking equipment, characterized in that the plate is a hot plate maintained at a temperature higher than room temperature.

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