CN112748638A - Method for removing thick glue edge on wafer - Google Patents
Method for removing thick glue edge on wafer Download PDFInfo
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- CN112748638A CN112748638A CN201911051717.8A CN201911051717A CN112748638A CN 112748638 A CN112748638 A CN 112748638A CN 201911051717 A CN201911051717 A CN 201911051717A CN 112748638 A CN112748638 A CN 112748638A
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- 238000000034 method Methods 0.000 title claims abstract description 59
- 239000003292 glue Substances 0.000 title claims abstract description 36
- 239000000126 substance Substances 0.000 claims abstract description 55
- 238000001259 photo etching Methods 0.000 claims abstract description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 24
- 229910052710 silicon Inorganic materials 0.000 claims description 24
- 239000010703 silicon Substances 0.000 claims description 24
- 238000004026 adhesive bonding Methods 0.000 claims description 16
- 239000002313 adhesive film Substances 0.000 claims description 10
- 239000007788 liquid Substances 0.000 claims description 9
- 238000003860 storage Methods 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 4
- 238000004528 spin coating Methods 0.000 claims description 4
- 238000005507 spraying Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 17
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 230000002730 additional effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000009966 trimming Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 238000007688 edging Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
The invention discloses a method for removing the edge of thick glue on a wafer, belonging to the technical field of semiconductor photoetching. The method aims at removing the edge of thick glue (7-20 microns) on a wafer, firstly thins the thickness of the glue film in the edge area of the wafer by a chemical mode, and then thoroughly removes the glue film by an edge exposure mode.
Description
Technical Field
The invention relates to the technical field of semiconductor photoetching, in particular to a method for removing the edge of thick glue on a wafer.
Background
As device critical dimensions become smaller and smaller, cleaning of the wafer edge becomes more important for reasons including, but not limited to, the following three points: 1. the photoresist in the gluing process flows to the edge of the wafer due to the centrifugal force, a circle of edge glue drops are formed due to the surface tension of the photoresist, if the photoresist is not removed, the glue drops can be stripped to form particles, the equipment and the wafer are polluted, the photoetching machine can be polluted more seriously, the poor exposure and focusing and the increase of overlay error are caused, and the defect rate is increased; 2. in the gluing process, photoresist is easy to accumulate in the area close to the edge of the wafer, and the accumulation can affect the subsequent etching and other processes; 3. since the photoresist is not conductive, the photoresist at the wafer edge also needs to be removed before the package plating process. It is known from the above reasons that edge photoresist removal is necessary and important, and because these problems are reflected in the coating of thick glue more serious than thin glue, it is very significant how to improve the edge removal efficiency of thick glue by means of process change and parameter adjustment.
The existing wafer edge photoresist removing method is divided into two modes of chemical removal and edge exposure, and has the advantages and the disadvantages that:
the edge exposure has the advantages of high production efficiency, low device cost, easy control of the process and neat edge profile, and has the disadvantage that the profile has a large slope (see fig. 1) due to light scattering. The edge exposure unit mainly comprises a wafer bearing platform, a pre-alignment system, a light source (with a light shielding plate) and a light intensity meter. After entering, the wafer is adsorbed on the bearing platform in vacuum, the pre-alignment system finds the exposure initial position, the light spot formed by the light source through the light shielding plate irradiates the edge of the wafer, and the edge exposure with controllable width and position is realized through the rotation of the bearing platform and the calculation control of the system.
Chemical removal has the advantage of no slope compared with edge exposure, and has the disadvantages of long edge removal time, high solvent material consumption cost, difficult cleaning of residual areas and uneven and neat profile of the removed areas. In the gluing unit with chemical removal, the chemical edge-removing needle head forms a certain angle with the surface of the wafer. After the wafer enters the unit, the wafer is adsorbed on the bearing table through vacuum and is subjected to rotary gluing, and the chemical edge removing needle head is moved to a specified position to spray chemical liquid to wash the edge.
The common trimming width is 0.5mm-1.5mm, but for the photoresist with the thickness of 7 μm-20 μm, the problems of edge irregularity, long time and large chemical consumption can occur by adopting a chemical removal mode, and the problems of difficult control and long time of slope can occur by adopting an edge exposure mode.
Disclosure of Invention
In order to overcome the defects of removing the edge of the thick glue (7-20 microns) in the prior art, the invention aims to provide the method for removing the edge of the thick glue on the wafer, and the aims of improving the productivity, strengthening the removal effect and reducing the consumption of chemicals are fulfilled by adopting a specific process and selecting proper process parameters.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
a method for removing the edge of thick photoresist on a wafer is provided, which is to process the coated photoresist on the wafer, wherein the thickness of the coated photoresist is 7-20 μm; the method specifically comprises the following steps:
a method for removing the edge of thick photoresist on a wafer is used for removing the edge of the photoresist coated on the wafer, and comprises the following steps:
(1) the wafer is conveyed to a gluing unit to be coated with photoresist and form a glue film;
(2) partially removing the glue film at the edge area of the wafer in a chemical mode in the gluing unit, namely reducing the thickness of the glue film at the edge area of the wafer, and controlling the size of the reduced area;
(3) transferring the wafer with the thinned edge photoresist to a hot plate for post-baking treatment;
(4) the wafer after the post-baking treatment is conveyed to an edge exposure unit, the residual adhesive film on the edge of the wafer is completely removed through the edge exposure of the silicon wafer, and the size of an exposure area is required to be controlled through the edge exposure of the silicon wafer;
(5) the wafer is sent into a photoetching machine for pattern exposure after being exposed at the edge of the silicon wafer, then is sent to a hot plate for exposure and baking, then is sent to a cold plate for cooling, and finally is sent to a developing unit for development, so that the photoresist at the edge of the wafer is completely removed, and finally is sent back to a silicon wafer storage unit.
In the step (1), the thickness of the adhesive film formed on the wafer is 7 μm to 20 μm.
In the step (2), the chemical method is adopted to partially remove the adhesive film at the edge area of the wafer: the removal width is W1, W1 is the distance from a circular ring line POS1 on the wafer to the outer edge of the wafer, a POS2 is arranged as a circular ring line outside the edge of the wafer (POS2 is outside the edge of the wafer, and POS1 and POS2 are concentric with the wafer), a needle spraying chemicals (removal liquid) performs reciprocating scanning between the POS1 and the POS2, and the photoresist on the edge of the wafer is thinned by 70-80% of the thickness of the photoresist by controlling the flow rate, the scanning speed and the scanning time of the chemicals.
In the step (2), the removal width W1 is determined according to actual requirements, and the distance from the POS2 to the edge of the wafer is 2-4 mm; the chemical flow, the scanning speed and the scanning time in the EBR need to be determined according to the thickness, the characteristics and the like of the glue on the wafer.
In the step (3), the temperature of the post-baking treatment needs to be determined according to the thickness, the characteristics and the like of the spin-on glue on the wafer.
In the step (4), the width W2 of the exposure region is the distance from the circular line POS1 on the wafer to the outer edge of the wafer, and W2 is equal to W1.
In the step (4), the exposure power and the exposure time are determined according to the thickness, the characteristics and the like of the spin coating on the wafer.
The method is carried out by utilizing a glue film edge removing device, wherein the glue film edge removing device comprises a silicon wafer storage unit, a glue coating unit, a hot plate, an edge exposure unit and a developing unit, wherein: the silicon wafer storage unit is used for storing a silicon wafer, the gluing unit is used for spin coating of photoresist, the hot plate is used for post-baking treatment of the silicon wafer, the edge exposure unit is used for edge exposure of the silicon wafer, and the developing unit is used for developing.
The invention has the following advantages and beneficial effects:
1. the method of the invention has the advantages of reduced chemical consumption: the chemical removal mode is changed from that the needle is fixed at the position of POS1 for long-time spray rinsing, to that the needle is scanned back and forth at POS1-POS2-POS1-POS2 for short time, and the positions of POS1 and POS2 are shown in figure 2. Since the purpose of the chemical removing step in the invention is changed from thorough cleaning in the prior art to uniform thinning of the edge area adhesive film, complete removal is not required (the required thinning amount is achieved by controlling process parameters), and the aims of shortening the process time and reducing the consumption of chemicals can be achieved by adjusting the flow rate, the position parameters of POS1 and POS2, the scanning speed of a needle head and the like.
2. Capacity is improved: the adhesive film at the edge area of the wafer after chemical trimming is thinned, and for the same material, the thicker the adhesive film is, the longer the exposure time is required, so that the exposure time required by the thinned edge area is correspondingly reduced, and the additional effect of reducing the slope width can be generated.
3. The edge removal effect is enhanced: the edge removal is carried out by combining chemical removal and edge exposure, so that new advantages can be generated besides the advantages of the chemical removal and the edge exposure: in the chemical removal process, the POS2 position is required to exceed the edge of the wafer, so that the edge-most glue drop residue can be thoroughly removed through scanning, and the level area can be cleaned along the belt; in the edge exposure process, the exposure time is shortened because the area of the adhesive film needing exposure is thinned, and the slope width generated after exposure is reduced. Therefore, the method has the advantages of clean edge, neat outline, narrower slope width, high production efficiency and low chemical consumption.
4. Aiming at the photoresists with different components and different thicknesses, the optimal cleaning effect and the collocation with higher productivity can be found by adjusting parameters such as chemical removal duration, flow, edge exposure duration, light intensity and the like and mutually matching.
Drawings
FIG. 1 is a schematic view of edge exposure.
FIG. 2 is a schematic view of chemical edge deletion.
FIG. 3 is a schematic diagram of the photoresist edge removal process of the present invention.
FIG. 4 is a schematic diagram of an edge removal process with only chemical edging.
Fig. 5 is a schematic view of the edge-only exposure process.
Detailed Description
The invention is described in detail below with reference to the figures and examples.
The flow of the method for removing the thick glue edge on the wafer provided by the invention is shown in figure 3, and the method comprises the following specific processes:
firstly, cooling a wafer in a cold plate, then conveying the wafer to a glue coating unit, and spin-coating to form a glue film;
and secondly, performing chemical removal in the gluing unit, wherein the removal width W1 is set as the distance from the wafer edge to the inner circle line POS1 on the wafer, and the position of the outer circle line POS2 on the wafer edge is required to exceed the outermost edge of the wafer. In the removing process, the needle head repeatedly scans and sprays chemicals between POS1-POS2, and the scanning speed and the chemical flow are adjusted according to specific conditions; and thinning the wafer edge adhesive film after chemical removal.
And thirdly, the wafer enters a hot plate for post-baking treatment, and then is conveyed to an edge exposure unit for exposure, the exposure area is set to be the width W2, W2 is the distance between an inner circular line POS1 on the wafer and the edge of the wafer, and W2 is W1. The exposure time is adjusted according to specific conditions;
and fourthly, conveying the wafer into a photoetching machine for exposure, conveying the wafer to a hot plate for post-exposure baking, conveying the wafer to a cold plate for cooling, and conveying the wafer to a developing unit for developing until the edge is removed.
Comparative example 1:
the photoresist PI is adopted, the coating thickness is 7.7 mu m, the edge removal target is W1-W2-1 +/-0.1 mm, the chemical removal liquid is OK73, and the wafer is a silicon wafer with the diameter of 300 mm. As shown in fig. 4, the optimal removal effect of the chemical removal method (fig. 2) is obtained by adjusting various parameters after the photoresist film is formed, and the optimal removal effect is recorded as follows: when only chemical removal is carried out, the film forming time of the gluing unit is 95.5s, the chemical edge removal time is 40s, the total time is 135.5s, the required chemical liquid consumption is 13.3ml, the edge removal basically reaches spec, the slope width is about 0.02mm, but the edge contour is uneven and is irregular and jagged or wavy;
comparative example 2:
a photoresist PI (same as comparative example 1) is used, the coating thickness is 7.7 μm, the edge removal target is W1 ═ W2 ═ 1 ± 0.1mm, and the wafer is a silicon wafer with the diameter of 300 mm. As shown in fig. 5, the optimum removal effect of the edge exposure method (fig. 1) is obtained by adjusting parameters after film formation, and is recorded as follows: the filming time of the gumming unit was 106.5s for edge-only exposure, 120s for edge exposure, and a total time of 226.5s, and the edge removal reached substantially spec, but the slope was wider, about 0.09 mm.
Example 1:
the photoresist PI (same as comparative example 1) is used, the coating thickness is 7.7 μm, the edge removal target is W1 ═ W2 ═ 1 ± 0.1mm, the chemical removal solution is OK73, and the wafer is a silicon wafer with the diameter of 300 mm. As shown in fig. 3, the optimal removal effect of this method is obtained by combining chemical removal with edge exposure, adjusting various parameters and trying various time combinations, and is recorded as follows: the two are combined, the film forming time of the gluing unit is 95.5s, the chemical edge removing time is 11s, the edge exposure time is 42s, the total time is 148.5s, the required chemical liquid consumption is 3.6ml, the edge removing effect is better, and the width of spec and slope is about 0.02 mm.
By recording data, the method disclosed by the invention has the best effect, and comprehensively considers the time length, the chemical consumption and the removal effect, so that the aim of the invention is fulfilled.
Comparative example 3:
the positive photoresist is adopted, the coating thickness is 15 mu m, the edge removal target is W1-W2-1.3 +/-0.15 mm, the chemical removal liquid is OK73, and the wafer is a silicon wafer with the diameter of 300 mm. As shown in fig. 4, the optimal removal effect of the chemical removal method is obtained by adjusting various parameters after film formation, and the following records are recorded: when only chemical removal is carried out, the film forming time of the gluing unit is 78s, the chemical edge removal time is 25s, the total time is 103s, the required chemical liquid consumption is 8.3ml, the edge removal basically reaches spec, the slope width is about 0.01mm, but the edge contour is uneven and is irregular and jagged or wavy.
Comparative example 4:
a positive photoresist (same as comparative example 3) was used, the thickness of the photoresist was 15 μm, the edge removal target was W1-W2-1.3 ± 0.15mm, and the wafer was a 300mm diameter silicon wafer. As shown in fig. 5, the optimum removal effect of the edge exposure method is obtained by adjusting parameters after film formation, and is recorded as follows: the filming time of the gumming unit was 86s for edge-only exposure, 40s for edge exposure, and 126s for total time, and the edge removal reached substantially spec, but the slope was wider, about 0.08 mm.
Example 2:
a positive photoresist (same as comparative example 3) is used, the coating thickness is 15 μm, the edge removal target is W1-W2-1.3 +/-0.15 mm, the chemical removal solution is OK73, and the wafer is a silicon wafer with the diameter of 300 mm. As shown in fig. 3, the optimal removal effect of this method is obtained by combining chemical removal with edge exposure, adjusting various parameters and trying various time combinations, and is recorded as follows: the two are combined, the film forming time of the gluing unit is 78s, the chemical edge removing time is 8s, the edge exposure time is 15s, the total time is 101s, the required chemical liquid consumption is 2.6ml, the edge removing effect is better, and the width of spec and slope is about 0.02 mm.
By recording data, the method disclosed by the invention has the best effect, and comprehensively considers the time length, the chemical consumption and the removal effect, so that the aim of the invention is fulfilled.
Through the embodiment, the method is suitable for removing the thick glue edge of 7-20 microns, has a good effect, and has the additional effects of saving chemicals, reducing slope and improving productivity.
Claims (8)
1. A method for removing the thick glue edge on a wafer is characterized in that: the method is used for removing the edge of photoresist coated on a wafer, and specifically comprises the following steps:
(1) the wafer is conveyed to a gluing unit to be coated with photoresist and form a glue film;
(2) partially removing the glue film at the edge area of the wafer in a chemical mode in the gluing unit, namely reducing the thickness of the glue film at the edge area of the wafer, and controlling the size of the reduced area;
(3) transferring the wafer with the thinned edge photoresist to a hot plate for post-baking treatment;
(4) the wafer after the post-baking treatment is conveyed to an edge exposure unit, the residual adhesive film on the edge of the wafer is completely removed through the edge exposure of the silicon wafer, and the size of an exposure area is required to be controlled through the edge exposure of the silicon wafer;
(5) the wafer is sent into a photoetching machine for pattern exposure after being exposed at the edge of the silicon wafer, then is sent to a hot plate for exposure and baking, then is sent to a cold plate for cooling, and finally is sent to a developing unit for development, so that the photoresist at the edge of the wafer is completely removed, and finally is sent back to a silicon wafer storage unit.
2. The method of claim 1, wherein the method further comprises: in the step (1), the thickness of the glue film formed on the wafer is 7 μm-20 μm.
3. The method of claim 1, wherein the method further comprises: in the step (2), in the process of partially removing the adhesive film at the edge area of the wafer by adopting a chemical mode: the removal width is W1, W1 is the distance from a circular ring line POS1 on the wafer to the outer edge of the wafer, a POS2 is arranged to be the circular ring line outside the edge of the wafer, a needle spraying removal liquid performs reciprocating scanning between the POS1 and the POS2, and the photoresist on the edge of the wafer is thinned by 70% -80% of the thickness of the photoresist by controlling the flow rate, the scanning speed and the scanning time of chemicals.
4. The method of claim 3, wherein: in the step (2), the removal width W1 is determined according to actual requirements, and the distance from the POS2 to the edge of the wafer is 2-4 mm.
5. The method of claim 1, wherein the method further comprises: in the step (3), the temperature of the post-baking treatment is determined according to the thickness, the characteristics and the like of the spin-on glue on the wafer.
6. The method of claim 3, wherein: in step (4), the width W2 of the exposure region is the distance from the circular line POS1 on the wafer to the outer edge of the wafer, and W2 is equal to W1.
7. The method of claim 6, wherein: in the step (4), the exposure power and the exposure time are determined according to the thickness, the characteristics and the like of the spin-on glue on the wafer.
8. The method of claim 1, wherein the method further comprises: the method is carried out by using a glue film edge removing device, wherein the glue film edge removing device comprises a silicon wafer storage unit, a gluing unit, a hot plate, an edge exposure unit and a developing unit, and the method comprises the following steps of: the silicon wafer storage unit is used for storing a silicon wafer, the gluing unit is used for spin coating of photoresist, the hot plate is used for post-baking treatment of the silicon wafer, the edge exposure unit is used for edge exposure of the silicon wafer, and the developing unit is used for developing.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113658854A (en) * | 2021-10-21 | 2021-11-16 | 绍兴中芯集成电路制造股份有限公司 | Photolithography method and method for manufacturing semiconductor device |
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| CN107918250A (en) * | 2016-10-10 | 2018-04-17 | 中芯国际集成电路制造(上海)有限公司 | Photoresist Deriming method and photoresist trimming board in NTD techniques |
| CN208141121U (en) * | 2018-05-14 | 2018-11-23 | 中芯长电半导体（江阴）有限公司 | Glue spreader with exposure function |
| CN110391135A (en) * | 2019-08-08 | 2019-10-29 | 武汉新芯集成电路制造有限公司 | Remove the manufacturing method of the remaining method of photoresist and semiconductor devices |
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- 2019-10-31 CN CN201911051717.8A patent/CN112748638A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107918250A (en) * | 2016-10-10 | 2018-04-17 | 中芯国际集成电路制造(上海)有限公司 | Photoresist Deriming method and photoresist trimming board in NTD techniques |
| CN208141121U (en) * | 2018-05-14 | 2018-11-23 | 中芯长电半导体（江阴）有限公司 | Glue spreader with exposure function |
| CN110391135A (en) * | 2019-08-08 | 2019-10-29 | 武汉新芯集成电路制造有限公司 | Remove the manufacturing method of the remaining method of photoresist and semiconductor devices |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113658854A (en) * | 2021-10-21 | 2021-11-16 | 绍兴中芯集成电路制造股份有限公司 | Photolithography method and method for manufacturing semiconductor device |
| CN113658854B (en) * | 2021-10-21 | 2022-01-28 | 绍兴中芯集成电路制造股份有限公司 | Photolithography method and method for manufacturing semiconductor device |
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