CN107785307B - Method for manufacturing titanium nitride pattern with step shape - Google Patents

Method for manufacturing titanium nitride pattern with step shape Download PDF

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Publication number
CN107785307B
CN107785307B CN201710964698.2A CN201710964698A CN107785307B CN 107785307 B CN107785307 B CN 107785307B CN 201710964698 A CN201710964698 A CN 201710964698A CN 107785307 B CN107785307 B CN 107785307B
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titanium nitride
pattern
partial area
layer
manufacturing
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CN107785307A (en
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刘善善
朱黎敏
朱兴旺
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Shanghai Huahong Grace Semiconductor Manufacturing Corp
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Shanghai Huahong Grace Semiconductor Manufacturing Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00523—Etching material
    • B81C1/00531—Dry etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00523—Etching material
    • B81C1/00539—Wet etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
    • H01L2221/1005—Formation and after-treatment of dielectrics

Abstract

The invention discloses a method for manufacturing a titanium nitride pattern with a step shape, which comprises the following steps: step one, depositing a titanium nitride layer on a substrate with steps; step two, defining a first partial area which is required to be opened and is positioned at the step in the titanium nitride pattern by photoetching; removing the titanium nitride layer in the first partial area by adopting a wet etching process; step four, defining a second partial area which is required to be opened and is positioned outside the first partial area in the titanium nitride graph by photoetching; and fifthly, removing the titanium nitride layer in the second partial area by adopting a dry etching process. The invention can simultaneously prevent the etching residue and peeling of the titanium nitride.

Description

Method for manufacturing titanium nitride pattern with step shape
Technical Field
The present invention relates to a method for manufacturing a semiconductor integrated circuit, and more particularly, to a method for manufacturing a titanium nitride (TiN) pattern having a step shape.
Background
In semiconductor devices, TiN is used as an important material for metal interconnects, and is generally used as a barrier layer and an anti-reflection layer in semiconductor manufacturing processes. As an electrode layer material in the MEMS process, titanium nitride has chemical and physical properties, especially titanium nitride has large stress, and a peeling phenomenon often occurs on a pattern with a small line width after etching is finished.
Disclosure of Invention
The invention provides a method for manufacturing a titanium nitride pattern with a step shape, which can prevent the etching residue and peeling of the titanium nitride at the same time.
In order to solve the above technical problem, the method for manufacturing a titanium nitride pattern having a step shape according to the present invention comprises the steps of:
step one, depositing a titanium nitride layer on the substrate with the steps.
And step two, carrying out first photoetching to define a first partial area needing to be opened in the titanium nitride pattern, wherein the first partial area is positioned at the step.
And thirdly, removing the titanium nitride layer in the first partial area by adopting a wet etching process.
And fourthly, carrying out second photoetching to define a second partial area needing to be opened in the titanium nitride pattern, wherein the second partial area is positioned outside the first partial area.
And fifthly, removing the titanium nitride layer in the second partial area by adopting a dry etching process, thereby forming the titanium nitride pattern.
In a further improvement, the titanium nitride pattern is a titanium nitride pattern in a MEMS process.
In a further improvement, in the first step, the substrate is an amorphous silicon substrate, and the step is formed by an amorphous silicon pattern.
In a further improvement, the first photolithography process in the second step includes the steps of:
a first layer of photoresist is formed.
And selecting the first partial area and exposing.
And developing to remove the first layer of photoresist in the first partial area.
The further improvement is that the step of removing the first layer of photoresist is further included after the wet etching process of the third step is completed and before the second photolithography process of the fourth step.
In a further improvement, the second photolithography process in the fourth step includes the steps of:
a second layer of photoresist is formed.
And selecting the second partial area and exposing.
And developing to remove the second layer of photoresist in the second partial area.
In a further improvement, the step of removing the second layer of photoresist is further included after the dry etching process of the step five is completed.
The further improvement is that the dry etching process in the fifth step adopts a metal dry etching process.
In a further improvement, the top-view structure of the amorphous silicon pattern is determined by a MEMS structure.
In a further improvement, the top-view structure of the amorphous silicon pattern comprises a polygon and a circle.
According to the manufacturing method of the step-shaped titanium nitride pattern, the etching of the titanium nitride pattern is divided into two times, the titanium nitride at the step is specially etched by adopting a wet etching process for the first time, and the titanium nitride is prevented from remaining by utilizing the characteristic that the titanium nitride at the step can be well removed by utilizing the wet etching process; namely, titanium nitride residue is easy to generate when the titanium nitride at the step is etched by adopting a dry etching process, and the titanium nitride residue can be avoided because the silicon nitride at the step is removed by adopting a wet etching process specially.
In the etching of the titanium nitride pattern, the titanium nitride in the flat area outside the step area is specially removed by adopting a dry etching process for the second time, so that the stripping of the titanium nitride can be prevented; namely, when the wet etching process is adopted to etch the titanium nitride in the flat area, the stripping of the titanium nitride can be formed, and the dry etching process is specially adopted to remove the silicon nitride in the flat area, so that the stripping of the titanium nitride can be avoided.
Drawings
The invention is described in further detail below with reference to the following figures and detailed description:
FIG. 1A is a photograph of a device structure formed by a prior art first fabrication method having a stepped titanium nitride pattern;
FIG. 1B is an enlarged photograph of FIG. 1A at the location of the dashed circle;
FIG. 2A is a photograph of a first device structure formed by a second conventional method for forming a titanium nitride pattern having a step shape;
FIG. 2B is a photograph of a second device structure formed by a second conventional method for forming a titanium nitride pattern with a step pattern;
FIG. 3 is a flow chart of a method of fabricating a titanium nitride pattern having a step pattern in accordance with an embodiment of the present invention;
fig. 4A-4C are schematic views of device structures in various steps of a method according to an embodiment of the invention.
Detailed Description
The method of the embodiment of the invention is formed on the basis of analyzing the technical problems generated by the existing method, and the whole process from the analysis of the technical problems to the obtaining of the technical scheme of the embodiment of the invention can well embody the creativity of the technical scheme of the embodiment of the invention, so that the corresponding technical problems generated by the existing method are introduced before the method of the embodiment of the invention is specifically described:
the existing method adopts the technical scheme of designing by adopting the conventional thinking, namely when a titanium nitride pattern is to be formed, the titanium nitride pattern is defined by adopting a photoetching process, and then an etching process is carried out according to the pattern defined by photoetching to form the titanium nitride pattern. That is, the existing method is to define the titanium nitride pattern once and then directly perform an etching once. According to different etching processes, the existing methods are divided into two types:
the etching process of the first manufacturing method of the titanium nitride pattern with the step shape in the prior art adopts dry etching, and as shown in fig. 1A, the etching process is a device structure photo formed by the first manufacturing method of the titanium nitride pattern with the step shape in the prior art; FIG. 1B is an enlarged photograph of FIG. 1A at the location of the dashed circle; the etched titanium nitride layer 101 spans the step structure, and there should be no titanium nitride residue outside the titanium nitride layer 101, that is, there should be no titanium nitride residue at the step outside the titanium nitride layer 101 shown by the dotted circle 102; however, as can be seen from the enlarged view corresponding to the dotted circle 102, i.e., fig. 1B, the step other than the titanium nitride layer 101 includes the residual titanium nitride indicated by the mark 103. That is, the dry etching process may cause titanium nitride residue at the step.
The etching process of the second existing manufacturing method for a titanium nitride pattern with a step shape adopts wet etching, and as shown in fig. 2A, the etching process is a device structure photo I formed by the second existing manufacturing method for a titanium nitride pattern with a step shape; the titanium nitride layer corresponding to the mark 201 is a normal pattern structure, and the titanium nitride layer corresponding to the mark 202a is a stripping structure of titanium nitride generated by wet etching. FIG. 2B is a second photograph showing the structure of a device formed by the second conventional method for forming a titanium nitride pattern having a step shape; the titanium nitride layer corresponding to the mark 202b is also a stripped structure of titanium nitride generated by wet etching.
FIG. 3 is a flow chart illustrating a method for forming a titanium nitride pattern with a step pattern according to an embodiment of the present invention; as shown in fig. 4A to 4C, which are schematic views of device structures in the steps of the method according to the embodiment of the present invention, the method for manufacturing a titanium nitride pattern having a step shape according to the embodiment of the present invention includes the following steps:
step one, as shown in fig. 4A, a titanium nitride layer 2 is deposited on the substrate having the step 1.
As shown in fig. 4A, the top surface of the step 1 is indicated by reference numeral 1a, and the bottom surface is indicated by reference numeral 1 b. In fig. 4A, titanium nitride layer 2 covers the substrate entirely, including the top and side surfaces of step 1 and the substrate surface outside step 1.
In the method of the embodiment of the invention, the titanium nitride pattern is a titanium nitride pattern in an MEMS process.
Preferably, the substrate is an amorphous silicon substrate, and the step 1 is a step 1 formed by an amorphous silicon pattern.
The top view structure of the amorphous silicon pattern is determined by the MEMS structure. The top view structure of the amorphous silicon pattern comprises a polygon and a circle; the specific structure is designed according to the requirements of the MEMS structure. The top view of the step 1 shown in fig. 4A is rectangular.
Step two, as shown in fig. 4B, a first partial region 3a to be opened in the titanium nitride pattern is defined by performing a first photolithography, and the first partial region 3a is located at the step 1.
Preferably, the first photolithography process includes the steps of:
a first layer of photoresist is formed.
The first partial region 3a is selected and exposed.
Developing is performed to remove the first layer of photoresist of the first partial region 3 a.
And step three, as shown in fig. 4B, removing the titanium nitride layer 2 in the first partial region 3a by using a wet etching process. The white areas of said first partial area 3a in fig. 4B indicate that all titanium nitride layers 2 have been removed.
And removing the first layer of photoresist after the wet etching process is finished.
Step four, as shown in fig. 4C, a second partial region 3b to be opened in the titanium nitride pattern is defined by performing a second photolithography, and the second partial region 3b is located outside the first partial region 3 a.
Preferably, the second photolithography process includes the steps of:
a second layer of photoresist is formed.
The second partial region 3b is selected and exposed.
Development is carried out to remove the second layer of photoresist of the second partial region 3 b.
In the method according to the embodiment of the present invention, the second layer of photoresist covers the first partial region 3a, so as to protect the first partial region 3a, and prevent the subsequent dry etching process from adversely affecting the step of the first partial region 3 a.
And step five, as shown in fig. 4C, removing the titanium nitride layer 2 in the second partial region 3b by using a dry etching process, thereby forming the titanium nitride pattern. The second partial area 3B in fig. 4B being a white area indicates that all titanium nitride layers 2 have been removed.
Preferably, the dry etching process is a metal dry etching process.
And removing the second layer of photoresist after the dry etching process is finished.
In the manufacturing method of the titanium nitride pattern with the step shape, the etching of the titanium nitride pattern is divided into two times, the titanium nitride at the step 1 is etched specially by adopting a wet etching process for the first time, and the titanium nitride residue is prevented by utilizing the characteristic that the titanium nitride at the step 1 can be well removed by the wet etching process; that is, titanium nitride residue shown in fig. 1B is easily generated when the titanium nitride at the step 1 is etched by using the dry etching process, but the embodiment of the present invention specifically uses the wet etching process to remove silicon nitride at the step 1, so that the titanium nitride residue can be avoided.
In the embodiment of the invention, the titanium nitride in the flat area outside the step 1 area is specially removed by adopting a dry etching process for the second time in the etching of the titanium nitride pattern, so that the stripping of the titanium nitride can be prevented; that is, when the wet etching process is used to etch the titanium nitride in the planar region, the stripping of the titanium nitride shown in fig. 2A and fig. 2B can be formed, but the embodiment of the invention specifically uses the dry etching process to remove the silicon nitride in the planar region, so that the peeling of the titanium nitride can be avoided.
The present invention has been described in detail with reference to the specific embodiments, but these should not be construed as limitations of the present invention. Many variations and modifications may be made by one of ordinary skill in the art without departing from the principles of the present invention, which should also be considered as within the scope of the present invention.

Claims (10)

1. A method for manufacturing a titanium nitride pattern with a step shape is characterized by comprising the following steps:
step one, depositing a titanium nitride layer on a substrate with steps;
step two, carrying out first photoetching to define a first partial area needing to be opened in the titanium nitride graph, wherein the first partial area is positioned at the step;
thirdly, removing the titanium nitride layer in the first partial area by adopting a wet etching process;
step four, carrying out second photoetching to define a second partial area needing to be opened in the titanium nitride pattern, wherein the second partial area is positioned outside the first partial area;
and fifthly, removing the titanium nitride layer in the second partial area by adopting a dry etching process, thereby forming the titanium nitride pattern.
2. The method of manufacturing a titanium nitride pattern having a step shape according to claim 1, wherein: the titanium nitride pattern is a titanium nitride pattern in an MEMS process.
3. The method of manufacturing a titanium nitride pattern having a step shape according to claim 2, wherein: in the first step, the substrate is an amorphous silicon substrate, and the step is formed by an amorphous silicon pattern.
4. The method of manufacturing a titanium nitride pattern having a step shape according to claim 1, wherein: the first photoetching process in the second step comprises the following steps of:
forming a first layer of photoresist;
selecting and exposing the first partial area;
and developing to remove the first layer of photoresist in the first partial area.
5. The method of manufacturing a titanium nitride pattern having a step shape according to claim 4, wherein: and step three, after the wet etching process is completed and before the second photoetching process, removing the first layer of photoresist.
6. The method of manufacturing a titanium nitride pattern having a step shape according to claim 1, wherein: the second photolithography process in step four includes the steps of:
forming a second layer of photoresist;
selecting and exposing the second partial area;
and developing to remove the second layer of photoresist in the second partial area.
7. The method of manufacturing a titanium nitride pattern having a step shape according to claim 6, wherein: and step five, after the dry etching process is completed, the step of removing the second layer of photoresist is also included.
8. The method of manufacturing a titanium nitride pattern having a step shape according to claim 1, wherein: and fifthly, adopting a metal dry etching process as the dry etching process.
9. The method of manufacturing a titanium nitride pattern having a step shape according to claim 3, wherein: the top view structure of the amorphous silicon pattern is determined by the MEMS structure.
10. The method of manufacturing a titanium nitride pattern having a step shape according to claim 9, wherein: the top-view structure of the amorphous silicon pattern comprises a polygon and a circle.
CN201710964698.2A 2017-10-17 2017-10-17 Method for manufacturing titanium nitride pattern with step shape Active CN107785307B (en)

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CN109160486B (en) * 2018-08-28 2021-04-06 上海华虹宏力半导体制造有限公司 MEMS electrode structure and manufacturing method thereof

Citations (2)

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Publication number Priority date Publication date Assignee Title
CN104280161A (en) * 2013-07-03 2015-01-14 中芯国际集成电路制造(上海)有限公司 Pressure sensor and forming method thereof
CN104698584A (en) * 2015-03-30 2015-06-10 上海新微技术研发中心有限公司 Double-beam type thermally-driven tunable filter and manufacturing method thereof

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US7060624B2 (en) * 2003-08-13 2006-06-13 International Business Machines Corporation Deep filled vias

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104280161A (en) * 2013-07-03 2015-01-14 中芯国际集成电路制造(上海)有限公司 Pressure sensor and forming method thereof
CN104698584A (en) * 2015-03-30 2015-06-10 上海新微技术研发中心有限公司 Double-beam type thermally-driven tunable filter and manufacturing method thereof

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